NT3H1101/NT3H1201 - NXP Semiconductors - Farnell Element 14
NT3H1101/NT3H1201 - NXP Semiconductors - Farnell Element 14
- Revenir à l'accueil
Farnell Element 14 :
See the trailer for the next exciting episode of The Ben Heck show. Check back on Friday to be among the first to see the exclusive full show on element…
Connect your Raspberry Pi to a breadboard, download some code and create a push-button audio play project.
Puce électronique / Microchip :
Sans fil - Wireless :
Texas instrument :
Ordinateurs :
Logiciels :
Tutoriels :
Autres documentations :
![[TXT]](http://www.audentia-gestion.fr/icons/text.gif)
Analog-Devices-ADC-S..> 09-Sep-2014 08:21 2.4M
Analog-Devices-ADMC2..> 09-Sep-2014 08:21 2.4M
Analog-Devices-ADMC4..> 09-Sep-2014 08:23 2.3M
Analog-Devices-AN300..> 08-Sep-2014 17:42 2.0M
Analog-Devices-ANF32..> 09-Sep-2014 08:18 2.6M
Analog-Devices-Basic..> 08-Sep-2014 17:49 1.9M
Analog-Devices-Compl..> 08-Sep-2014 17:38 2.0M
Analog-Devices-Convo..> 09-Sep-2014 08:26 2.1M
Analog-Devices-Convo..> 09-Sep-2014 08:25 2.2M
Analog-Devices-Convo..> 09-Sep-2014 08:25 2.2M
Analog-Devices-Digit..> 08-Sep-2014 18:02 2.1M
Analog-Devices-Digit..> 08-Sep-2014 18:03 2.0M
Analog-Devices-Gloss..> 08-Sep-2014 17:36 2.0M
Analog-Devices-Intro..> 08-Sep-2014 17:39 1.9M
Analog-Devices-The-C..> 08-Sep-2014 17:41 1.9M
Analog-Devices-Visua..> 09-Sep-2014 08:18 2.5M
Analog-Devices-Wi-Fi..> 09-Sep-2014 08:23 2.3M
Electronique-Basic-o..> 08-Sep-2014 17:43 1.8M
Farnell-0050375063-D..> 18-Jul-2014 17:03 2.5M
Farnell-03-iec-runds..> 04-Jul-2014 10:40 3.7M
Farnell-0430300011-D..> 14-Jun-2014 18:13 2.0M
Farnell-0433751001-D..> 18-Jul-2014 17:02 2.5M
Farnell-06-6544-8-PD..> 26-Mar-2014 17:56 2.7M
Farnell-1N4148WS-Fai..> 06-Jul-2014 10:04 1.9M
Farnell-2-GBPS-Diffe..> 28-Jul-2014 17:42 2.7M
Farnell-2N3906-Fairc..> 08-Sep-2014 07:22 2.1M
Farnell-2N7002DW-Fai..> 06-Jul-2014 10:03 886K
Farnell-3M-Polyimide..> 21-Mar-2014 08:09 3.9M
Farnell-3M-VolitionT..> 25-Mar-2014 08:18 3.3M
Farnell-4-Bit-Magnit..> 08-Jul-2014 18:53 2.2M
Farnell-10BQ060-PDF.htm 14-Jun-2014 09:50 2.4M
Farnell-10TPB47M-End..> 14-Jun-2014 18:16 3.4M
Farnell-12mm-Size-In..> 14-Jun-2014 09:50 2.4M
Farnell-24AA024-24LC..> 23-Jun-2014 10:26 3.1M
Farnell-50A-High-Pow..> 20-Mar-2014 17:31 2.9M
Farnell-74AC00-74ACT..> 06-Jul-2014 10:03 911K
Farnell-74LCX573-Fai..> 06-Jul-2014 10:05 1.9M
Farnell-197.31-KB-Te..> 04-Jul-2014 10:42 3.3M
Farnell-270-Series-O..> 08-Jul-2014 18:49 2.3M
Farnell-760G-French-..> 07-Jul-2014 19:45 1.2M
Farnell-851-Series-P..> 08-Jul-2014 18:47 3.0M
Farnell-900-Series-B..> 08-Jul-2014 18:50 2.3M
Farnell-1734-ARALDIT..> 07-Jul-2014 19:45 1.2M
Farnell-1907-2006-PD..> 26-Mar-2014 17:56 2.7M
Farnell-2020-Manuel-..> 08-Jul-2014 18:55 2.1M
Farnell-3367-ARALDIT..> 07-Jul-2014 19:46 1.2M
Farnell-5910-PDF.htm 25-Mar-2014 08:15 3.0M
Farnell-6517b-Electr..> 29-Mar-2014 11:12 3.3M
Farnell-43031-0002-M..> 18-Jul-2014 17:03 2.5M
Farnell-A-4-Hardener..> 07-Jul-2014 19:44 1.4M
Farnell-A-True-Syste..> 29-Mar-2014 11:13 3.3M
Farnell-AC-DC-Power-..> 15-Jul-2014 16:47 845K
Farnell-ACC-Silicone..> 04-Jul-2014 10:40 3.7M
Farnell-AD524-PDF.htm 20-Mar-2014 17:33 2.8M
Farnell-AD584-Rev-C-..> 08-Sep-2014 07:20 2.2M
Farnell-AD586BRZ-Ana..> 08-Sep-2014 08:09 1.6M
Farnell-AD620-Rev-H-..> 09-Sep-2014 08:13 2.6M
Farnell-AD736-Rev-I-..> 08-Sep-2014 07:31 1.3M
Farnell-AD7171-16-Bi..> 06-Jul-2014 10:06 1.0M
Farnell-AD7719-Low-V..> 18-Jul-2014 16:59 1.4M
Farnell-AD8300-Data-..> 18-Jul-2014 16:56 1.3M
Farnell-AD8307-Data-..> 08-Sep-2014 07:30 1.3M
Farnell-AD8310-Analo..> 08-Sep-2014 07:24 2.1M
Farnell-AD8313-Analo..> 08-Sep-2014 07:26 2.0M
Farnell-AD8361-Rev-D..> 08-Sep-2014 07:23 2.1M
Farnell-AD9833-Rev-E..> 08-Sep-2014 17:49 1.8M
Farnell-AD9834-Rev-D..> 08-Sep-2014 07:32 1.2M
Farnell-ADE7753-Rev-..> 08-Sep-2014 07:20 2.3M
Farnell-ADE7758-Rev-..> 08-Sep-2014 07:28 1.7M
Farnell-ADL6507-PDF.htm 14-Jun-2014 18:19 3.4M
Farnell-ADSP-21362-A..> 20-Mar-2014 17:34 2.8M
Farnell-ADuM1200-ADu..> 08-Sep-2014 08:09 1.6M
Farnell-ADuM1300-ADu..> 08-Sep-2014 08:11 1.7M
Farnell-ALF1210-PDF.htm 06-Jul-2014 10:06 4.0M
Farnell-ALF1225-12-V..> 01-Apr-2014 07:40 3.4M
Farnell-ALF2412-24-V..> 01-Apr-2014 07:39 3.4M
Farnell-AN10361-Phil..> 23-Jun-2014 10:29 2.1M
Farnell-ARADUR-HY-13..> 26-Mar-2014 17:55 2.8M
Farnell-ARALDITE-201..> 21-Mar-2014 08:12 3.7M
Farnell-ARALDITE-CW-..> 26-Mar-2014 17:56 2.7M
Farnell-AT89C5131-Ha..> 29-Jul-2014 10:31 1.2M
Farnell-AT90USBKey-H..> 29-Jul-2014 10:31 902K
Farnell-ATMEL-8-bit-..> 19-Mar-2014 18:04 2.1M
Farnell-ATMEL-8-bit-..> 11-Mar-2014 07:55 2.1M
Farnell-ATmega640-VA..> 14-Jun-2014 09:49 2.5M
Farnell-ATtiny20-PDF..> 25-Mar-2014 08:19 3.6M
Farnell-ATtiny26-L-A..> 18-Jul-2014 17:00 2.6M
Farnell-ATtiny26-L-A..> 13-Jun-2014 18:40 1.8M
Farnell-Alimentation..> 07-Jul-2014 19:43 1.8M
Farnell-Alimentation..> 14-Jun-2014 18:24 2.5M
Farnell-Alimentation..> 01-Apr-2014 07:42 3.4M
Farnell-Amplificateu..> 29-Mar-2014 11:11 3.3M
Farnell-Amplifier-In..> 06-Jul-2014 10:02 940K
Farnell-An-Improved-..> 14-Jun-2014 09:49 2.5M
Farnell-Araldite-Fus..> 07-Jul-2014 19:45 1.2M
Farnell-Arithmetic-L..> 08-Jul-2014 18:54 2.1M
Farnell-Atmel-ATmega..> 19-Mar-2014 18:03 2.2M
Farnell-Avvertenze-e..> 14-Jun-2014 18:20 3.3M
Farnell-BA-Series-Oh..> 08-Jul-2014 18:50 2.3M
Farnell-BAV99-Fairch..> 06-Jul-2014 10:03 896K
Farnell-BC846DS-NXP-..> 13-Jun-2014 18:42 1.6M
Farnell-BC847DS-NXP-..> 23-Jun-2014 10:24 3.3M
Farnell-BD6xxx-PDF.htm 22-Jul-2014 12:33 1.6M
Farnell-BF545A-BF545..> 23-Jun-2014 10:28 2.1M
Farnell-BGA7124-400-..> 18-Jul-2014 16:59 1.5M
Farnell-BK889B-PONT-..> 07-Jul-2014 19:42 1.8M
Farnell-BK2650A-BK26..> 29-Mar-2014 11:10 3.3M
Farnell-BT151-650R-N..> 13-Jun-2014 18:40 1.7M
Farnell-BTA204-800C-..> 13-Jun-2014 18:42 1.6M
Farnell-BUJD203AX-NX..> 13-Jun-2014 18:41 1.7M
Farnell-BYV29F-600-N..> 13-Jun-2014 18:42 1.6M
Farnell-BYV79E-serie..> 10-Mar-2014 16:19 1.6M
Farnell-BZX384-serie..> 23-Jun-2014 10:29 2.1M
Farnell-Battery-GBA-..> 14-Jun-2014 18:13 2.0M
Farnell-Both-the-Del..> 06-Jul-2014 10:01 948K
Farnell-C.A-6150-C.A..> 14-Jun-2014 18:24 2.5M
Farnell-C.A 8332B-C...> 01-Apr-2014 07:40 3.4M
Farnell-CC-Debugger-..> 07-Jul-2014 19:44 1.5M
Farnell-CC2530ZDK-Us..> 08-Jul-2014 18:55 2.1M
Farnell-CC2531-USB-H..> 07-Jul-2014 19:43 1.8M
Farnell-CC2560-Bluet..> 29-Mar-2014 11:14 2.8M
Farnell-CD4536B-Type..> 14-Jun-2014 18:13 2.0M
Farnell-CIRRUS-LOGIC..> 10-Mar-2014 17:20 2.1M
Farnell-CLASS 1-or-2..> 22-Jul-2014 12:30 4.7M
Farnell-CRC-HANDCLEA..> 07-Jul-2014 19:46 1.2M
Farnell-CS5532-34-BS..> 01-Apr-2014 07:39 3.5M
Farnell-Cannon-ZD-PD..> 11-Mar-2014 08:13 2.8M
Farnell-Ceramic-tran..> 14-Jun-2014 18:19 3.4M
Farnell-Circuit-Impr..> 25-Jul-2014 12:22 3.1M
Farnell-Circuit-Note..> 26-Mar-2014 18:00 2.8M
Farnell-Circuit-Note..> 26-Mar-2014 18:00 2.8M
Farnell-Cles-electro..> 21-Mar-2014 08:13 3.9M
Farnell-Clipper-Seri..> 08-Jul-2014 18:48 2.8M
Farnell-Compensating..> 09-Sep-2014 08:16 2.6M
Farnell-Compensating..> 09-Sep-2014 08:16 2.6M
Farnell-Conception-d..> 11-Mar-2014 07:49 2.4M
Farnell-Connectors-N..> 14-Jun-2014 18:12 2.1M
Farnell-Construction..> 14-Jun-2014 18:25 2.5M
Farnell-Controle-de-..> 11-Mar-2014 08:16 2.8M
Farnell-Cordless-dri..> 14-Jun-2014 18:13 2.0M
Farnell-Cube-3D-Prin..> 18-Jul-2014 17:02 2.5M
Farnell-Current-Tran..> 26-Mar-2014 17:58 2.7M
Farnell-Current-Tran..> 26-Mar-2014 17:58 2.7M
Farnell-Current-Tran..> 26-Mar-2014 17:59 2.7M
Farnell-Current-Tran..> 26-Mar-2014 17:59 2.7M
Farnell-DAC8143-Data..> 18-Jul-2014 16:59 1.5M
Farnell-DC-DC-Conver..> 15-Jul-2014 16:48 781K
Farnell-DC-Fan-type-..> 14-Jun-2014 09:48 2.5M
Farnell-DC-Fan-type-..> 14-Jun-2014 09:51 1.8M
Farnell-DG411-DG412-..> 07-Jul-2014 19:47 1.0M
Farnell-DP83846A-DsP..> 18-Jul-2014 16:55 1.5M
Farnell-DS3231-DS-PD..> 18-Jul-2014 16:57 2.5M
Farnell-Data-Sheet-K..> 07-Jul-2014 19:46 1.2M
Farnell-Data-Sheet-M..> 09-Sep-2014 08:05 2.8M
Farnell-Data-Sheet-S..> 18-Jul-2014 17:00 1.2M
Farnell-Datasheet-FT..> 09-Sep-2014 08:10 2.8M
Farnell-Datasheet-Fa..> 06-Jul-2014 10:04 861K
Farnell-Datasheet-Fa..> 15-Jul-2014 17:05 1.0M
Farnell-Datasheet-NX..> 15-Jul-2014 17:06 1.0M
Farnell-Davum-TMC-PD..> 14-Jun-2014 18:27 2.4M
Farnell-De-la-puissa..> 29-Mar-2014 11:10 3.3M
Farnell-Decapant-KF-..> 07-Jul-2014 19:45 1.2M
Farnell-Directive-re..> 25-Mar-2014 08:16 3.0M
Farnell-Documentatio..> 14-Jun-2014 18:26 2.5M
Farnell-Download-dat..> 16-Jul-2014 09:02 2.2M
Farnell-Download-dat..> 13-Jun-2014 18:40 1.8M
Farnell-Dremel-Exper..> 22-Jul-2014 12:34 1.6M
Farnell-Dual-MOSFET-..> 28-Jul-2014 17:41 2.8M
Farnell-ECO-Series-T..> 20-Mar-2014 08:14 2.5M
Farnell-EE-SPX303N-4..> 15-Jul-2014 17:06 969K
Farnell-ELMA-PDF.htm 29-Mar-2014 11:13 3.3M
Farnell-EMC1182-PDF.htm 25-Mar-2014 08:17 3.0M
Farnell-EPCOS-173438..> 04-Jul-2014 10:43 3.3M
Farnell-EPCOS-Sample..> 11-Mar-2014 07:53 2.2M
Farnell-ES1F-ES1J-fi..> 06-Jul-2014 10:04 867K
Farnell-ES2333-PDF.htm 11-Mar-2014 08:14 2.8M
Farnell-ESCON-Featur..> 06-Jul-2014 10:05 938K
Farnell-ESCON-Featur..> 06-Jul-2014 10:02 931K
Farnell-Ed.081002-DA..> 19-Mar-2014 18:02 2.5M
Farnell-Encodeur-USB..> 08-Jul-2014 18:56 2.0M
Farnell-Evaluating-t..> 22-Jul-2014 12:28 4.9M
Farnell-Everything-Y..> 11-Oct-2014 12:05 1.5M
Farnell-Excalibur-Hi..> 28-Jul-2014 17:10 2.4M
Farnell-Excalibur-Hi..> 28-Jul-2014 17:10 2.4M
Farnell-Explorer-16-..> 29-Jul-2014 10:31 1.3M
Farnell-F28069-Picco..> 14-Jun-2014 18:14 2.0M
Farnell-F42202-PDF.htm 19-Mar-2014 18:00 2.5M
Farnell-FAN6756-Fair..> 06-Jul-2014 10:04 850K
Farnell-FDC2512-Fair..> 06-Jul-2014 10:03 886K
Farnell-FDS-ITW-Spra..> 14-Jun-2014 18:22 3.3M
Farnell-FDV301N-Digi..> 06-Jul-2014 10:03 886K
Farnell-FICHE-DE-DON..> 10-Mar-2014 16:17 1.6M
Farnell-Fast-Charge-..> 28-Jul-2014 17:12 6.4M
Farnell-Fastrack-Sup..> 23-Jun-2014 10:25 3.3M
Farnell-Ferric-Chlor..> 29-Mar-2014 11:14 2.8M
Farnell-Fiche-de-don..> 14-Jun-2014 09:47 2.5M
Farnell-Fiche-de-don..> 14-Jun-2014 18:26 2.5M
Farnell-Fluke-1730-E..> 14-Jun-2014 18:23 2.5M
Farnell-Full-Datashe..> 15-Jul-2014 17:08 951K
Farnell-Full-Datashe..> 15-Jul-2014 16:47 803K
Farnell-GALVA-A-FROI..> 26-Mar-2014 17:56 2.7M
Farnell-GALVA-MAT-Re..> 26-Mar-2014 17:57 2.7M
Farnell-GN-RELAYS-AG..> 20-Mar-2014 08:11 2.6M
Farnell-Gertboard-Us..> 29-Jul-2014 10:30 1.4M
Farnell-HC49-4H-Crys..> 14-Jun-2014 18:20 3.3M
Farnell-HFE1600-Data..> 14-Jun-2014 18:22 3.3M
Farnell-HI-70300-Sol..> 14-Jun-2014 18:27 2.4M
Farnell-HIP4081A-Int..> 07-Jul-2014 19:47 1.0M
Farnell-HUNTSMAN-Adv..> 10-Mar-2014 16:17 1.7M
Farnell-Haute-vitess..> 11-Mar-2014 08:17 2.4M
Farnell-Hex-Inverter..> 29-Jul-2014 10:31 875K
Farnell-High-precisi..> 08-Jul-2014 18:51 2.3M
Farnell-ICM7228-Inte..> 07-Jul-2014 19:46 1.1M
Farnell-IP4252CZ16-8..> 13-Jun-2014 18:41 1.7M
Farnell-ISL6251-ISL6..> 07-Jul-2014 19:47 1.1M
Farnell-Instructions..> 19-Mar-2014 18:01 2.5M
Farnell-Jeu-multi-la..> 25-Jul-2014 12:23 3.0M
Farnell-KSZ8851SNL-S..> 23-Jun-2014 10:28 2.1M
Farnell-Keyboard-Mou..> 22-Jul-2014 12:27 5.9M
Farnell-L-efficacite..> 11-Mar-2014 07:52 2.3M
Farnell-L78S-STMicro..> 22-Jul-2014 12:32 1.6M
Farnell-L293d-Texas-..> 08-Jul-2014 18:53 2.2M
Farnell-LCW-CQ7P.CC-..> 25-Mar-2014 08:19 3.2M
Farnell-LD-WSECO16-P..> 25-Jul-2014 12:22 3.1M
Farnell-LM3S6952-Mic..> 22-Jul-2014 12:27 5.9M
Farnell-LM19-Texas-I..> 18-Jul-2014 17:00 1.2M
Farnell-LM324-Texas-..> 29-Jul-2014 10:32 1.5M
Farnell-LM386-Low-Vo..> 29-Jul-2014 10:32 1.5M
Farnell-LM555-Timer-..> 08-Jul-2014 18:53 2.2M
Farnell-LM7805-Fairc..> 09-Sep-2014 08:13 2.7M
Farnell-LME49725-Pow..> 14-Jun-2014 09:49 2.5M
Farnell-LMH6518-Texa..> 18-Jul-2014 16:59 1.3M
Farnell-LMP91051-Use..> 29-Jul-2014 10:30 1.4M
Farnell-LMT88-2.4V-1..> 28-Jul-2014 17:42 2.8M
Farnell-LOCTITE-542-..> 25-Mar-2014 08:15 3.0M
Farnell-LOCTITE-3463..> 25-Mar-2014 08:19 3.0M
Farnell-LPC11U3x-32-..> 16-Jul-2014 09:01 2.4M
Farnell-LPC81xM-32-b..> 16-Jul-2014 09:02 2.0M
Farnell-LPC408x-7x 3..> 16-Jul-2014 09:03 1.6M
Farnell-LPC1769-68-6..> 16-Jul-2014 09:02 1.9M
Farnell-LPC3220-30-4..> 16-Jul-2014 09:02 2.2M
Farnell-LQ-RELAYS-AL..> 06-Jul-2014 10:02 924K
Farnell-LT1961-Linea..> 18-Jul-2014 16:58 1.6M
Farnell-LT3757-Linea..> 18-Jul-2014 16:58 1.6M
Farnell-LT6233-Linea..> 18-Jul-2014 16:56 1.3M
Farnell-LUMINARY-MIC..> 22-Jul-2014 12:31 3.6M
Farnell-LUXEON-Guide..> 11-Mar-2014 07:52 2.3M
Farnell-Leaded-Trans..> 23-Jun-2014 10:26 3.2M
Farnell-Les-derniers..> 11-Mar-2014 07:50 2.3M
Farnell-Loctite3455-..> 25-Mar-2014 08:16 3.0M
Farnell-Low-Noise-24..> 06-Jul-2014 10:05 1.0M
Farnell-Low-cost-Enc..> 13-Jun-2014 18:42 1.7M
Farnell-Lubrifiant-a..> 26-Mar-2014 18:00 2.7M
Farnell-MAX232-MAX23..> 08-Jul-2014 18:52 2.3M
Farnell-MAX1365-MAX1..> 18-Jul-2014 16:56 1.4M
Farnell-MAX3221-Rev-..> 08-Sep-2014 07:28 1.8M
Farnell-MAX4661-MAX4..> 09-Sep-2014 08:10 2.8M
Farnell-MC3510-PDF.htm 25-Mar-2014 08:17 3.0M
Farnell-MC21605-PDF.htm 11-Mar-2014 08:14 2.8M
Farnell-MCF532x-7x-E..> 29-Mar-2014 11:14 2.8M
Farnell-MCOC1-Farnel..> 16-Jul-2014 09:04 1.0M
Farnell-MCP3421-Micr..> 18-Jul-2014 17:00 1.2M
Farnell-MICREL-KSZ88..> 11-Mar-2014 07:54 2.2M
Farnell-MICROCHIP-PI..> 19-Mar-2014 18:02 2.5M
Farnell-MICROCHIP-PI..> 25-Jul-2014 12:34 6.7M
Farnell-MIDAS-un-tra..> 15-Jul-2014 17:05 1.0M
Farnell-MOLEX-39-00-..> 10-Mar-2014 17:19 1.9M
Farnell-MOLEX-43020-..> 10-Mar-2014 17:21 1.9M
Farnell-MOLEX-43160-..> 10-Mar-2014 17:21 1.9M
Farnell-MOLEX-87439-..> 10-Mar-2014 17:21 1.9M
Farnell-MPXV7002-Rev..> 20-Mar-2014 17:33 2.8M
Farnell-MSP-EXP430F5..> 29-Jul-2014 10:31 1.2M
Farnell-MSP430-Hardw..> 29-Jul-2014 10:36 1.1M
Farnell-MSP430F15x-M..> 08-Sep-2014 07:32 1.3M
Farnell-MTX-3250-MTX..> 18-Jul-2014 17:01 2.5M
Farnell-MTX-Compact-..> 18-Jul-2014 17:01 2.5M
Farnell-MULTICOMP-Ra..> 22-Jul-2014 12:57 5.9M
Farnell-MX670-MX675-..> 14-Jun-2014 09:46 2.5M
Farnell-Microchip-MC..> 13-Jun-2014 18:27 1.8M
Farnell-Microship-PI..> 11-Mar-2014 07:53 2.2M
Farnell-Midas-Active..> 14-Jun-2014 18:17 3.4M
Farnell-Midas-MCCOG4..> 14-Jun-2014 18:11 2.1M
Farnell-Mini-Fit-Jr-..> 18-Jul-2014 17:03 2.5M
Farnell-Miniature-Ci..> 26-Mar-2014 17:55 2.8M
Farnell-Mistral-PDF.htm 14-Jun-2014 18:12 2.1M
Farnell-Molex-83421-..> 14-Jun-2014 18:17 3.4M
Farnell-Molex-COMMER..> 14-Jun-2014 18:16 3.4M
Farnell-Molex-Crimp-..> 10-Mar-2014 16:27 1.7M
Farnell-Multi-Functi..> 20-Mar-2014 17:38 3.0M
Farnell-NA555-NE555-..> 08-Jul-2014 18:53 2.2M
Farnell-NA555-NE555-..> 08-Sep-2014 07:51 1.5M
Farnell-NE5532-Texas..> 29-Jul-2014 10:32 1.5M
Farnell-NTE_SEMICOND..> 11-Mar-2014 07:52 2.3M
Farnell-NVE-datashee..> 28-Jul-2014 17:12 6.5M
Farnell-NXP-74VHC126..> 10-Mar-2014 16:17 1.6M
Farnell-NXP-BT136-60..> 11-Mar-2014 07:52 2.3M
Farnell-NXP-PBSS9110..> 10-Mar-2014 17:21 1.9M
Farnell-NXP-PCA9555 ..> 11-Mar-2014 07:54 2.2M
Farnell-NXP-PMBFJ620..> 10-Mar-2014 16:16 1.7M
Farnell-NXP-PSMN1R7-..> 10-Mar-2014 16:17 1.6M
Farnell-NXP-PSMN7R0-..> 10-Mar-2014 17:19 2.1M
Farnell-NXP-TEA1703T..> 11-Mar-2014 08:15 2.8M
Farnell-NaPiOn-Panas..> 06-Jul-2014 10:02 911K
Farnell-Nilï¬-sk-E-..> 14-Jun-2014 09:47 2.5M
Farnell-Novembre-201..> 20-Mar-2014 17:38 3.3M
Farnell-OMRON-INDUST..> 25-Jul-2014 12:31 6.9M
Farnell-OMRON-INDUST..> 25-Jul-2014 12:32 6.9M
Farnell-OMRON-Master..> 10-Mar-2014 16:26 1.8M
Farnell-OPA627-Texas..> 09-Sep-2014 08:08 2.8M
Farnell-OSLON-SSL-Ce..> 19-Mar-2014 18:03 2.1M
Farnell-OXPCIE958-FB..> 13-Jun-2014 18:40 1.8M
Farnell-Octal-Genera..> 28-Jul-2014 17:42 2.8M
Farnell-PADO-semi-au..> 04-Jul-2014 10:41 3.7M
Farnell-PBSS5160T-60..> 19-Mar-2014 18:03 2.1M
Farnell-PCF8574-PCF8..> 16-Jul-2014 09:03 1.7M
Farnell-PDTA143X-ser..> 20-Mar-2014 08:12 2.6M
Farnell-PDTB123TT-NX..> 13-Jun-2014 18:43 1.5M
Farnell-PESD5V0F1BL-..> 13-Jun-2014 18:43 1.5M
Farnell-PESD9X5.0L-P..> 13-Jun-2014 18:43 1.6M
Farnell-PIC12F609-61..> 04-Jul-2014 10:41 3.7M
Farnell-PIC18F2420-2..> 18-Jul-2014 16:57 2.5M
Farnell-PIC18F2455-2..> 23-Jun-2014 10:27 3.1M
Farnell-PIC24FJ256GB..> 14-Jun-2014 09:51 2.4M
Farnell-PMBT3906-PNP..> 13-Jun-2014 18:44 1.5M
Farnell-PMBT4403-PNP..> 23-Jun-2014 10:27 3.1M
Farnell-PMEG4002EL-N..> 14-Jun-2014 18:18 3.4M
Farnell-PMEG4010CEH-..> 13-Jun-2014 18:43 1.6M
Farnell-PN512-Full-N..> 16-Jul-2014 09:03 1.4M
Farnell-Panasonic-15..> 23-Jun-2014 10:29 2.1M
Farnell-Panasonic-EC..> 20-Mar-2014 17:36 2.6M
Farnell-Panasonic-EZ..> 20-Mar-2014 08:10 2.6M
Farnell-Panasonic-Id..> 20-Mar-2014 17:35 2.6M
Farnell-Panasonic-Ne..> 20-Mar-2014 17:36 2.6M
Farnell-Panasonic-Ra..> 20-Mar-2014 17:37 2.6M
Farnell-Panasonic-TS..> 20-Mar-2014 08:12 2.6M
Farnell-Panasonic-Y3..> 20-Mar-2014 08:11 2.6M
Farnell-PiFace-Digit..> 25-Jul-2014 12:25 3.0M
Farnell-Pico-Spox-Wi..> 10-Mar-2014 16:16 1.7M
Farnell-PicoScope-42..> 25-Jul-2014 12:23 3.0M
Farnell-PicoScope-se..> 25-Jul-2014 12:24 3.0M
Farnell-Pompes-Charg..> 24-Apr-2014 20:23 3.3M
Farnell-Ponts-RLC-po..> 14-Jun-2014 18:23 3.3M
Farnell-Portable-Ana..> 29-Mar-2014 11:16 2.8M
Farnell-Power-suppli..> 25-Jul-2014 12:29 7.0M
Farnell-Premier-Farn..> 21-Mar-2014 08:11 3.8M
Farnell-Produit-3430..> 14-Jun-2014 09:48 2.5M
Farnell-Proskit-SS-3..> 10-Mar-2014 16:26 1.8M
Farnell-Puissance-ut..> 11-Mar-2014 07:49 2.4M
Farnell-Q48-PDF.htm 23-Jun-2014 10:29 2.1M
Farnell-QRE1113-Fair..> 06-Jul-2014 10:03 879K
Farnell-Quadruple-2-..> 08-Sep-2014 07:29 1.5M
Farnell-Quick-Start-..> 25-Jul-2014 12:25 3.0M
Farnell-RASPBERRY-PI..> 22-Jul-2014 12:35 5.9M
Farnell-RDS-80-PDF.htm 18-Jul-2014 16:57 1.3M
Farnell-REF19x-Serie..> 09-Sep-2014 08:08 2.8M
Farnell-REF102-10V-P..> 28-Jul-2014 17:09 2.4M
Farnell-RF-short-tra..> 28-Jul-2014 17:16 6.3M
Farnell-Radial-Lead-..> 20-Mar-2014 08:12 2.6M
Farnell-RaspiCam-Doc..> 22-Jul-2014 12:32 1.6M
Farnell-Realiser-un-..> 11-Mar-2014 07:51 2.3M
Farnell-Reglement-RE..> 21-Mar-2014 08:08 3.9M
Farnell-Repartiteurs..> 14-Jun-2014 18:26 2.5M
Farnell-S-TRI-SWT860..> 21-Mar-2014 08:11 3.8M
Farnell-S1A-Fairchil..> 06-Jul-2014 10:03 896K
Farnell-SB175-Connec..> 11-Mar-2014 08:14 2.8M
Farnell-SB520-SB5100..> 22-Jul-2014 12:32 1.6M
Farnell-SERIAL-TFT-M..> 15-Jul-2014 17:05 1.0M
Farnell-SICK-OPTIC-E..> 18-Jul-2014 16:58 1.5M
Farnell-SL3ICS1002-1..> 16-Jul-2014 09:05 2.5M
Farnell-SL3S1203_121..> 16-Jul-2014 09:04 1.1M
Farnell-SL3S4011_402..> 16-Jul-2014 09:03 1.1M
Farnell-SL59830-Inte..> 06-Jul-2014 10:11 1.0M
Farnell-SMBJ-Transil..> 29-Mar-2014 11:12 3.3M
Farnell-SMU-Instrume..> 08-Jul-2014 18:51 2.3M
Farnell-SN54HC164-SN..> 08-Sep-2014 07:25 2.0M
Farnell-SN54HC244-SN..> 08-Jul-2014 18:52 2.3M
Farnell-SN54LV4053A-..> 28-Jul-2014 17:20 5.9M
Farnell-SO967460-PDF..> 11-Oct-2014 12:05 2.9M
Farnell-SOT-23-Multi..> 11-Mar-2014 07:51 2.3M
Farnell-SOURIAU-Cont..> 08-Jul-2014 19:04 3.0M
Farnell-SPLC780A1-16..> 14-Jun-2014 18:25 2.5M
Farnell-SSC7102-Micr..> 23-Jun-2014 10:25 3.2M
Farnell-STM32F103x8-..> 22-Jul-2014 12:33 1.6M
Farnell-STM32F405xxS..> 27-Aug-2014 18:27 1.8M
Farnell-SVPE-series-..> 14-Jun-2014 18:15 2.0M
Farnell-Schroff-A108..> 25-Jul-2014 12:27 2.8M
Farnell-Schroff-Main..> 25-Jul-2014 12:26 2.9M
Farnell-Schroff-mult..> 25-Jul-2014 12:26 2.9M
Farnell-Sensorless-C..> 04-Jul-2014 10:42 3.3M
Farnell-Septembre-20..> 20-Mar-2014 17:46 3.7M
Farnell-Serial-File-..> 06-Jul-2014 10:02 941K
Farnell-Serie-PicoSc..> 19-Mar-2014 18:01 2.5M
Farnell-Serie-Standa..> 14-Jun-2014 18:23 3.3M
Farnell-Series-2600B..> 20-Mar-2014 17:30 3.0M
Farnell-Series-TDS10..> 04-Jul-2014 10:39 4.0M
Farnell-Signal-PCB-R..> 14-Jun-2014 18:11 2.1M
Farnell-Silica-Gel-M..> 07-Jul-2014 19:46 1.2M
Farnell-Single-Chip-..> 08-Sep-2014 07:30 1.5M
Farnell-SmartRF06-Ev..> 07-Jul-2014 19:43 1.6M
Farnell-Strangkuhlko..> 21-Mar-2014 08:09 3.9M
Farnell-Supercapacit..> 26-Mar-2014 17:57 2.7M
Farnell-Synchronous-..> 08-Jul-2014 18:54 2.1M
Farnell-T672-3000-Se..> 08-Jul-2014 18:59 2.0M
Farnell-TAS1020B-USB..> 28-Jul-2014 17:19 6.2M
Farnell-TCL-DC-traco..> 15-Jul-2014 16:46 858K
Farnell-TDK-Lambda-H..> 14-Jun-2014 18:21 3.3M
Farnell-TEKTRONIX-DP..> 10-Mar-2014 17:20 2.0M
Farnell-TEL-5-Series..> 15-Jul-2014 16:47 814K
Farnell-TEN-8-WI-Ser..> 15-Jul-2014 16:46 939K
Farnell-TEP-150WI-Se..> 15-Jul-2014 16:47 837K
Farnell-TEXAS-INSTRU..> 22-Jul-2014 12:29 4.8M
Farnell-TEXAS-INSTRU..> 22-Jul-2014 12:31 2.4M
Farnell-TEXAS-INSTRU..> 22-Jul-2014 12:30 4.6M
Farnell-TIS-Instruct..> 15-Jul-2014 16:47 845K
Farnell-TIS-series-t..> 15-Jul-2014 16:46 875K
Farnell-TKC2-Dusters..> 07-Jul-2014 19:46 1.2M
Farnell-TL082-Wide-B..> 28-Jul-2014 17:16 6.3M
Farnell-TLV320AIC23B..> 08-Sep-2014 07:18 2.4M
Farnell-TLV320AIC325..> 28-Jul-2014 17:45 2.9M
Farnell-TMLM-Series-..> 15-Jul-2014 16:47 810K
Farnell-TMP006EVM-Us..> 29-Jul-2014 10:30 1.3M
Farnell-TMR-2-Series..> 15-Jul-2014 16:46 897K
Farnell-TMR-2-series..> 15-Jul-2014 16:48 787K
Farnell-TMR-3-WI-Ser..> 15-Jul-2014 16:46 939K
Farnell-TMS320F28055..> 28-Jul-2014 17:09 2.7M
Farnell-TOS-tracopow..> 15-Jul-2014 16:47 852K
Farnell-TPS40060-Wid..> 28-Jul-2014 17:19 6.3M
Farnell-TSV6390-TSV6..> 28-Jul-2014 17:14 6.4M
Farnell-TXL-series-t..> 15-Jul-2014 16:47 829K
Farnell-TYCO-ELECTRO..> 25-Jul-2014 12:30 6.9M
Farnell-Tektronix-AC..> 13-Jun-2014 18:44 1.5M
Farnell-Telemetres-l..> 20-Mar-2014 17:46 3.7M
Farnell-Termometros-..> 14-Jun-2014 18:14 2.0M
Farnell-The-Discrete..> 08-Sep-2014 17:44 1.8M
Farnell-The-essentia..> 10-Mar-2014 16:27 1.7M
Farnell-Thermometre-..> 29-Jul-2014 10:30 1.4M
Farnell-Tiva-C-Serie..> 08-Jul-2014 18:49 2.6M
Farnell-Trust-Digita..> 25-Jul-2014 12:24 3.0M
Farnell-U2270B-PDF.htm 14-Jun-2014 18:15 3.4M
Farnell-ULINKpro-Deb..> 25-Jul-2014 12:35 5.9M
Farnell-ULN2803A-Rev..> 09-Sep-2014 19:26 2.9M
Farnell-USB-Buccanee..> 14-Jun-2014 09:48 2.5M
Farnell-USB-to-Seria..> 08-Sep-2014 07:27 2.0M
Farnell-USB1T11A-PDF..> 19-Mar-2014 18:03 2.1M
Farnell-UTO-Souriau-..> 08-Jul-2014 18:48 2.8M
Farnell-UTS-Series-S..> 08-Jul-2014 18:49 2.8M
Farnell-UTS-Series-S..> 08-Jul-2014 18:49 2.5M
Farnell-User-Guide-M..> 07-Jul-2014 19:41 2.0M
Farnell-V4N-PDF.htm 14-Jun-2014 18:11 2.1M
Farnell-Videk-PDF.htm 06-Jul-2014 10:01 948K
Farnell-WIRE-WRAP-50..> 25-Jul-2014 12:34 5.9M
Farnell-WetTantalum-..> 11-Mar-2014 08:14 2.8M
Farnell-XPS-AC-Octop..> 14-Jun-2014 18:11 2.1M
Farnell-XPS-MC16-XPS..> 11-Mar-2014 08:15 2.8M
Farnell-XPSAF5130-PD..> 18-Jul-2014 16:56 1.4M
Farnell-YAGEO-DATA-S..> 11-Mar-2014 08:13 2.8M
Farnell-ZigBee-ou-le..> 11-Mar-2014 07:50 2.4M
Farnell-celpac-SUL84..> 21-Mar-2014 08:11 3.8M
Farnell-china_rohs_o..> 21-Mar-2014 10:04 3.9M
Farnell-cree-Xlamp-X..> 20-Mar-2014 17:34 2.8M
Farnell-cree-Xlamp-X..> 20-Mar-2014 17:35 2.7M
Farnell-cree-Xlamp-X..> 20-Mar-2014 17:31 2.9M
Farnell-cree-Xlamp-m..> 20-Mar-2014 17:32 2.9M
Farnell-cree-Xlamp-m..> 20-Mar-2014 17:32 2.9M
Farnell-ev-relays-ae..> 06-Jul-2014 10:02 926K
Farnell-fiche-de-don..> 07-Jul-2014 19:44 1.4M
Farnell-fx-3650P-fx-..> 29-Jul-2014 10:42 1.5M
Farnell-iServer-Micr..> 22-Jul-2014 12:32 1.6M
Farnell-ir1150s_fr.p..> 29-Mar-2014 11:11 3.3M
Farnell-manual-bus-p..> 10-Mar-2014 16:29 1.9M
Farnell-maxim-integr..> 28-Jul-2014 17:14 6.4M
Farnell-pmbta13_pmbt..> 15-Jul-2014 17:06 959K
Farnell-propose-plus..> 11-Mar-2014 08:19 2.8M
Farnell-safety-data-..> 07-Jul-2014 19:44 1.4M
Farnell-techfirst_se..> 21-Mar-2014 08:08 3.9M
Farnell-tesa®pack63..> 08-Jul-2014 18:56 2.0M
Farnell-testo-205-20..> 20-Mar-2014 17:37 3.0M
Farnell-testo-470-Fo..> 20-Mar-2014 17:38 3.0M
Farnell-uC-OS-III-Br..> 10-Mar-2014 17:20 2.0M
Farnell-user-manuel-..> 29-Jul-2014 10:29 1.5M
Sefram-7866HD.pdf-PD..> 29-Mar-2014 11:46 472K
Sefram-CAT_ENREGISTR..> 29-Mar-2014 11:46 461K
Sefram-CAT_MESUREURS..> 29-Mar-2014 11:46 435K
Sefram-GUIDE_SIMPLIF..> 29-Mar-2014 11:46 481K
Sefram-GUIDE_SIMPLIF..> 29-Mar-2014 11:46 442K
Sefram-GUIDE_SIMPLIF..> 29-Mar-2014 11:46 422K
Sefram-SP270.pdf-PDF..> 29-Mar-2014 11:46 464K
Farnell-AN2794-Appli..> 13-Oct-2014 10:02 1.0M
Farnell-Data-Sheet-S..> 13-Oct-2014 10:09 1.2M
Farnell-ESM6045DV-ST..> 13-Oct-2014 10:07 850K
Farnell-L78-Positive..> 13-Oct-2014 10:05 1.8M
Farnell-L78S-STMicro..> 13-Oct-2014 10:09 1.6M
Farnell-L4978-STMicr..> 13-Oct-2014 10:08 783K
Farnell-L6384E-STMic..> 13-Oct-2014 10:03 1.9M
Farnell-L6562-STMicr..> 13-Oct-2014 10:08 754K
Farnell-LM139-LM239-..> 13-Oct-2014 10:08 771K
Farnell-LM217-LM317-..> 13-Oct-2014 10:05 1.7M
Farnell-LM350-STMicr..> 13-Oct-2014 10:04 1.8M
Farnell-LM2904-LM290..> 13-Oct-2014 10:05 1.7M
Farnell-MC34063ABD-T..> 13-Oct-2014 10:07 844K
Farnell-SG2525A-SG35..> 13-Oct-2014 10:02 1.0M
Farnell-SMAJ-STMicro..> 13-Oct-2014 10:08 734K
Farnell-ST1S10PHR-ST..> 13-Oct-2014 10:08 820K
Farnell-ST3232B-ST32..> 13-Oct-2014 10:07 867K
Farnell-STEVAL-TDR02..> 13-Oct-2014 10:02 960K
Farnell-STM32F030x4-..> 13-Oct-2014 10:07 1.1M
Farnell-STM32F103x8-..> 13-Oct-2014 10:07 1.0M
Farnell-STM32F205xx-..> 13-Oct-2014 10:06 1.7M
Farnell-STM32F405xx-..> 13-Oct-2014 10:06 1.4M
Farnell-STP16NF06L-n..> 13-Oct-2014 10:06 1.7M
Farnell-STP80NF55L-0..> 13-Oct-2014 10:06 1.7M
Farnell-Smart-street..> 13-Oct-2014 10:04 1.8M
Farnell-TIP41C-TIP42..> 13-Oct-2014 10:08 829K
Farnell-TIP102-TIP10..> 13-Oct-2014 10:07 853K
Farnell-TSV6390-TSV6..> 13-Oct-2014 10:10 6.4M
Farnell-ULN2001-ULN2..> 13-Oct-2014 10:03 1.9M
Farnell-ULQ2001-ULQ2..> 13-Oct-2014 10:03 1.9M
Farnell-VND920P-E-ST..> 13-Oct-2014 10:04 1.8M
1. General description
The NTAG I2C is the first product of NXP’s NTAG family offering both contactless and
contact interfaces (see Figure 1). In addition to the passive NFC Forum compliant
contactless interface, the IC features an I2C contact interface, which can communicate
with a microcontroller if the NTAG I2C is powered from an external power supply. An
additional externally powered SRAM mapped into the memory allows a fast data transfer
between the RF and I2C interfaces and vice versa, without the write cycle limitations of the
EEPROM memory.
The NTAG I2C product features a configurable Field Detection Pin, which provides a
trigger to an external device depending on the activities at the RF interface.
The NTAG I2C product can also supply power to external (low power) devices (e.g., a
microcontroller) via the embedded energy harvesting circuitry.
2. Features and benefits
2.1 Key features
RF interface NFC forum Type 2 Tag compliant
I
2C interface
NT3H1101/NT3H1201
NTAG I2C , NFC Forum type 2 Tag compliant IC with I2C
interface
Rev. 3.1 — 9 October 2014
265431
Product data sheet
COMPANY PUBLIC
Fig 1. Contactless and contact system
aaa-010357
NFC
enabled
device
Data
Energy
Data
Energy
I
2C
EEPROM 1 1 1 0 0 0 1
Energy Harvesting
Field detection
Micro
controllerNT3H1101/NT3H1201 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 3.1 — 9 October 2014
265431 2 of 62
NXP Semiconductors NT3H1101/NT3H1201
NFC Forum type 2 Tag compliant IC with I2C interface
Configurable field detection pin based on open drain implementation that can be
triggered upon the following events:
A RF field presence
The first Start-of-Frame
The selection of the tag only
64 byte SRAM buffer for fast transfer of data (Pass-through mode) between the RF
and the I2C interfaces located outside the User Memory
Wake up signal at the field detect pin when:
New data has arrived from one interface
Data has been read by the receiving interface
Clear arbitration between RF and I2C interfaces:
First come, first serve strategy
Status flag bits to signal if one interface is busy writing to or reading data from the
EEPROM
Energy harvesting functionality to power external devices (e.g. microcontroller)
FAST READ command for faster data reading
2.2 RF interface
Contactless transmission of data
NFC Forum Type 2 tag compliant (see Ref. 1)
Operating frequency of 13.56 MHz
Data transfer of 106 kbit/s
4 bytes (one page) written including all overhead in 4,8 ms via EEPROM or 0,8 ms via
SRAM (Pass-through mode)
Data integrity of 16-bit CRC, parity, bit coding, bit counting
Operating distance of up to 100 mm (depending on various parameters, such as field
strength and antenna geometry)
True anticollision
Unique 7 byte serial number (cascade level 2 according to ISO/IEC 14443-3
(see Ref. 2)
2.3 Memory
1904 bytes freely available with User Read/Write area (476 pages with 4 bytes per
pages) for the NTAG I2C 2k version
888 bytes freely available with User Read/Write area (222 pages with 4 bytes per
pages) for the NTAG I2C 1k version
Field programmable RF read-only locking function with static and dynamic lock bits
configurable from both I²C and NFC interfaces
64 bytes SRAM volatile memory without write endurance limitation
Data retention time of 20 years
Write endurance 200,000 cycles
2.4 I2C interface
I
2C slave interface supports Standard (100 kHz) and Fast (up to 400 kHz) mode (see
Ref. 3)NT3H1101/NT3H1201 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 3.1 — 9 October 2014
265431 3 of 62
NXP Semiconductors NT3H1101/NT3H1201
NFC Forum type 2 Tag compliant IC with I2C interface
16 bytes (one block) written in 4,5ms (EEPROM) or 0,4 ms (SRAM - Pass-through
mode) including all overhead
RFID chip can be used as standard I2C EEPROM
2.5 Security
Manufacturer-programmed 7-byte UID for each device
Capability container with one time programmable bits
Field programmable read-only locking function per page (per 32 pages for the
extended memory section)
2.6 Key benefits
The Pass-through mode allows fast download and upload of data from RF to I²C and
vice versa without the cycling limitation of EEPROM
NDEF message storage up to 1904 bytes (2k version) or up to 888 bytes (1k version)
The mapping of the SRAM inside the User Memory buffer allows dynamic update of
NDEF message content
3. Applications
With all its integrated features and functions the NTAG I2C is the ideal solution to enable a
contactless communication via an NFC device (e.g., NFC enabled mobile phone) to an
electronic device for:
Zero power configuration (late customization)
Smart customer interaction (e.g., easier after sales service, such as firmware update)
Advanced pairing (for e.g., WiFi or Blue tooth) for dynamic generation of sessions keys
Easier product customization and customer experience for the following applications:
Home automation
Home appliances
Consumer electronics
Healthcare
Printers
Smart meters
4. Ordering information
Table 1. Ordering information
Type number Package
Name Description Version
NT3H1101W0FHK XQFN8 Plastic, extremely thin quad flat package; no leads; 8 terminals; body 1.6 x
1.6 x 0.6mm; 1k bytes memory, 50pF input capacitance
SOT902-3
NT3H1201W0FHK XQFN8 Plastic, extremely thin quad flat package; no leads; 8 terminals; body 1.6 x
1.6 x 0.6mm; 2k bytes memory, 50pF input capacitance
SOT902-3NT3H1101/NT3H1201 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 3.1 — 9 October 2014
265431 4 of 62
NXP Semiconductors NT3H1101/NT3H1201
NFC Forum type 2 Tag compliant IC with I2C interface
5. Marking
6. Block diagram
Table 2. Marking codes
Type number Marking code
NT3H1201FHK N12
NT3H1101FHK N11
Fig 2. Block diagram
aaa-010358
I
2C
SLAVE
I
2C
CONTROL
RF
INTERFACE
LA
LB
POWER MANAGEMENT/
ENERGY HARVESTING
DIGITAL CONTROL UNIT MEMORY
EEPROM
SRAM
ARBITER/STATUS
REGISTERS
ANTICOLLISION
COMMAND
INTERPRETER
MEMORY
INTERFACE
SDA
SCL
GND
FD
VCC VoutNT3H1101/NT3H1201 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 3.1 — 9 October 2014
265431 5 of 62
NXP Semiconductors NT3H1101/NT3H1201
NFC Forum type 2 Tag compliant IC with I2C interface
7. Pinning information
7.1 Pinning
7.2 Pin description
NXP recommends leaving the central pad of the package unconnected.
(1) Dimension A: 1.6 mm
(2) Dimension B: 0.5 mm
Fig 3. Pin configuration
aaa-010359
FD
Transparent top view
side view
4
8
6
5
7
3
1
2VSS
LA
SCL
A
B
LB
A
VCC
SDA
VOUT
Table 3. Pin description
Pin Symbol Description
1 LA Antenna connection LA
2 VSS GND
3 SCL Serial Clock I2C
4 FD Field detection
5 SDA Serial data I2C
6 VCC VCC in connection (external power supply)
7 Vout Voltage out (energy harvesting)
8 LB Antenna connection LBNT3H1101/NT3H1201 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 3.1 — 9 October 2014
265431 6 of 62
NXP Semiconductors NT3H1101/NT3H1201
NFC Forum type 2 Tag compliant IC with I2C interface
8. Functional description
8.1 Block description
NTAG I2C ICs consist of (see details below): 2016 bytes of EEPROM memory, 64 Bytes of
SRAM, a RF interface, Digital Control Unit (DCU), Power Management Unit (PMU) and an
I²C interface. Energy and data are transferred via an antenna consisting of a coil with a
few turns, which is directly connected to NTAG I2C IC. No further external components are
necessary.
• RF interface:
– modulator/demodulator
– rectifier
– clock regenerator
– Power-On Reset (POR)
– voltage regulator
• Anticollision: multiple cards may be selected and managed in sequence
• Command interpreter: processes memory access commands supported by the NTAG
I
2C
• EEPROM interface
8.2 RF interface
The RF-interface is based on the ISO/IEC 14443 Type A standard.
During operation, the NFC device generates an RF field. The RF field must always be
present (with short pauses for data communication), as it is used for both communication
and as power supply for the tag.
For both directions of data communication, there is one start bit at the beginning of each
frame. Each byte is transmitted with an odd parity bit at the end. The LSB of the byte with
the lowest address of the selected block is transmitted first. The maximum length of an
NFC device to tag frame is 163 bits (16 data bytes + 2 CRC bytes = 16×9 + 2×9 + 1 start
bit). The maximum length of a fixed size tag to NFC device frame is 307 bits (32 data
bytes + 2 CRC bytes = 32 9 + 2 9 + 1 start bit). The FAST_READ command has a
variable frame length, which depends on the start and end address parameters. The
maximum frame length supported by the NFC device must be taken into account when
issuing this command.
For a multi-byte parameter, the least significant byte is always transmitted first. For
example, when reading from the memory using the READ command, byte 0 from the
addressed block is transmitted first, followed by bytes 1 to byte 3 out of this block. The
same sequence continues for the next block and all subsequent blocks.
8.2.1 Data integrity
The following mechanisms are implemented in the contactless communication link
between the NFC device and the NTAG I²C IC to ensure very reliable data transmission:
• 16 bits CRC per blockNT3H1101/NT3H1201 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 3.1 — 9 October 2014
265431 7 of 62
NXP Semiconductors NT3H1101/NT3H1201
NFC Forum type 2 Tag compliant IC with I2C interface
• Parity bits for each byte
• Bit count checking
• Bit coding to distinguish between “1”, “0” and “no information”
• Channel monitoring (protocol sequence and bit stream analysis)
The commands are initiated by the NFC device and controlled by the Digital Control Unit
of the NTAG I2C IC. The command response depends on the state of the IC, and for
memory operations, also on the access conditions valid for the corresponding page.
8.2.2 RF communication principle
The overall RF communication principle is summarized in Figure 4.
8.2.2.1 IDLE state
After a power-on reset (POR), the NTAG I2C switches to the IDLE state. It only exits this
state when a REQA or a WUPA command is received from the NFC device. Any other
data received while in this state is interpreted as an error, and the NTAG I2C remains in
the IDLE state.
Fig 4. RF communication principle of NTAG I2C
SELECT
cascade level 2
READY 1
READY 2
SELECT
cascade level 1
ACTIVE
HALT IDLE
POR
ANTICOLLISION
ANTICOLLISION
HLTA
identification
and
selection
procedure
memory
operations
aaa-012797
REQA
WUPA WUPA
READ (16 Byte)
FAST_READ
WRITE
SECTOR_SELECT
GET_VERSION NT3H1101/NT3H1201 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 3.1 — 9 October 2014
265431 8 of 62
NXP Semiconductors NT3H1101/NT3H1201
NFC Forum type 2 Tag compliant IC with I2C interface
After a correctly executed HLTA command e.g., out of the ACTIVE state, the default
waiting state changes from the IDLE state to the HALT state. This state can then only be
exited with a WUPA command.
8.2.2.2 READY 1 state
In the READY 1 state, the NFC device resolves the first part of the UID (3 bytes) using the
ANTICOLLISION or SELECT commands in cascade level 1. This state is correctly exited
after execution of the following command:
• SELECT command from cascade level 1: the NFC device switches the NTAG I2C into
READY2 state where the second part of the UID is resolved.
8.2.2.3 READY 2 state
In the READY 2 state, the NTAG I2C supports the NFC device in resolving the second part
of its UID (4 bytes) with the cascade level 2 ANTICOLLISION command. This state is
usually exited using the cascade level 2 SELECT command.
Remark: The response of the NTAG I2C to the cascade level 2 SELECT command is the
Select AcKnowledge (SAK) byte. In accordance with ISO/IEC 14443, this byte indicates if
the anticollision cascade procedure has finished. NTAG I2C is now uniquely selected and
only this device will communicate with the NFC device even when other contactless
devices are present in the NFC device field.
8.2.2.4 ACTIVE state
All memory operations are operated in the ACTIVE state.
The ACTIVE state is exited with the HLTA command and upon reception, the NTAG I2C
transits to the HALT state. Any other data received when the device is in this state is
interpreted as an error. Depending on its previous state, the NTAG I2C returns to either
the IDLE state or HALT state.
8.2.2.5 HALT state
HALT and IDLE states constitute the two wait states implemented in the NTAG I2C. An
already processed NTAG I2C can be set into the HALT state using the HLTA command. In
the anticollision phase, this state helps the NFC device distinguish between processed
tags and tags yet to be selected. The NTAG I2C can only exit this state upon execution of
the WUPA command. Any other data received when the device is in this state is
interpreted as an error, and NTAG I2C state remains unchanged.
8.3 Memory organization
The memory map is detailed in Figure 5 (1k memory) and Figure 6 (2k memory) from the
RF interface and in Figure 7 (1k memory) and Figure 8 (2k memory) from the I2C
interface. The SRAM memory is not mapped from the RF interface, because in the default
settings of the NTAG I2C the Pass-through mode is not enabled. Please refer to
Section 11 for examples of memory map from the RF interface with SRAM mapping.
The structure of manufacturing data, static lock bytes, capability container and user
memory pages (except of the user memory length) are compatible with other NTAG
products.NT3H1101/NT3H1201 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 3.1 — 9 October 2014
265431 9 of 62
NXP Semiconductors NT3H1101/NT3H1201
NFC Forum type 2 Tag compliant IC with I2C interface
Any memory access which starts at a valid address and extends into an invalid access
region will return 0x00 value in the invalid region.
8.3.1 Memory map from RF interface
Memory access from the RF interface is organized in pages of 4 bytes each.
Fig 5. NTAG I²C 1k memory organization from the RF interface
aaa-012798
Sector adr.
Hex. Dec. Hex. 0 1 2 3 conditions
Page address
0h 0 0h
1h ......
1 1h
2 2h
3 3h
4 4h
15 0Fh
225 E1h
226 E2h
227 E3h
228 E4h
229 E5h
230 E6h
231 E7h
232 E8h
233 E9h
234 EAh
255 FFh
......
......
......
...
Serial number
Invalid access - returns NAK
Serial number Internal data
00h
Internal data Lock bytes
Byte number within a page
READ
Capability Container (CC) READ&WRITE
READ
READ/R&W
n.a.
Dynamic lock bytes R&W/R
2h ...... Invalid access - returns NAK n.a.
3h 0 0h
Invalid access - returns NAK n.a.
Invalid access - returns NAK n.a.
Invalid access - returns NAK n.a.
User memory READ&WRITE
249 F9H
248 F8H
Session registers See section 8.5.9
Configuration See section 8.5.9
255 FFH
...... Invalid access - returns NAK n.a.
AccessNT3H1101/NT3H1201 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 3.1 — 9 October 2014
265431 10 of 62
NXP Semiconductors NT3H1101/NT3H1201
NFC Forum type 2 Tag compliant IC with I2C interface
8.3.2 Memory map from I²C interface
The memory access of NTAG I²C from the I²C interface is organized in blocks of 16 bytes
each.
Fig 6. NTAG I²C 2k memory organization from the RF interface
aaa-012799
Sector adr.
Hex. Dec. Hex. 0 1 2 3 conditions
Page address
0h 0 0h
2h ......
1 1h
1h
2 2h
3 3h
4 4h
15 0Fh
225 FFh
226 E2h
227 E3h
228 E4h
223 DFh
224 E0h
225 E1h
229 E5h
230 E6h
231 E7h
232 E8h
233 E9h
234 EAh
255 FFh
......
......
...
Serial number
Invalid access - returns NAK
Serial number Internal data
00h
Internal data Lock bytes
Byte number within a page
READ
Capability Container (CC) READ&WRITE
READ
READ/R&W
n.a.
Dynamic lock bytes R&W/R
3h 0 0h
Invalid access - returns NAK n.a.
Invalid access - returns NAK n.a.
Invalid access - returns NAK n.a.
User memory READ&WRITE
249 F9H
248 F8H
Session registers See section 8.5.9
Configuration See section 8.5.9
255 FFH
...... Invalid access - returns NAK n.a.
Access
0 0h
1 1h
......
......
...
...
...
...NT3H1101/NT3H1201 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 3.1 — 9 October 2014
265431 11 of 62
NXP Semiconductors NT3H1101/NT3H1201
NFC Forum type 2 Tag compliant IC with I2C interface
Remark: * The Byte 0 of Block 0 is always read as 04h. Writing to this byte modifies the I²C
address.
Fig 7. NTAG I²C 1k memory organization from the I²C interface
aaa-012800
Dec. Hex. 12 13 14 15
I
2C block address
1 1h
0 0h
... ...
55 37h
56 38h
Serial number
Serial number Internal data
Internal data Lock bytes
I
2C addr.*
Byte number within a block
00h 00h 00h 00h
R&W/READ
Capability Container (CC) READ&WRITE
User memory READ&WRITE
User memory READ&WRITE
Invalid access - returns NAK n.a.
READ
Dynamic lock bytes 00h R&W
READ
57 39h
Invalid access - returns NAK n.a.
READ/R&W
User memory READ&WRITE
Access conditions
8 910 11
4567
0123
58 3Ah
fixed 00h fixed 00h fixed 00h fixed 00h
fixed 00h fixed 00h fixed 00h
Configuration See section 8.5.9
fixed 00h READ
READ
254 FEh
fixed 00h fixed 00h fixed 00h fixed 00h
fixed 00h fixed 00h fixed 00h
Session registers
(requires READ-Register command)
See section 8.5.9
fixed 00h READ
READ
59 3Bh
... ...
247 F7h
Invalid access - returns NAK n.a.
248 F8h
... ...
... ...
... ... Invalid access - returns NAK n.a.
251 FBh
SRAM memory (64 bytes) READ&WRITENT3H1101/NT3H1201 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 3.1 — 9 October 2014
265431 12 of 62
NXP Semiconductors NT3H1101/NT3H1201
NFC Forum type 2 Tag compliant IC with I2C interface
8.3.3 EEPROM
The EEPROM is a non volatile memory that stores the 7 byte UID, the memory lock
conditions, IC configuration information and the 1904 bytes User Data (888 byte User
Data in case of the NTAG I2C 1k version).
8.3.4 SRAM
For frequently changing data, a volatile memory of 64 bytes with unlimited endurance is
built in. The 64 bytes are mapped in a similar way as is done in the EEPROM, i.e., 64
bytes are seen as 16 pages of 4 bytes.
Remark: *The Byte 0 of Block 0 is always read as 04h. Writing to this byte modifies the I²C
address.
Fig 8. NTAG I²C 2k memory organization from the I²C interface
aaa-012801
Dec. Hex. 12 13 14 15
I
2C block address
1 1h
0 0h
... ...
119 77h
120 78h
Serial number
Serial number Internal data
Internal data Lock bytes
I
2C addr.*
Byte number within a block
R&W/READ
Capability Container (CC) READ&WRITE
Dynamic lock bytes R&W
Invalid access - returns NAK n.a.
READ
00h 00h 00h 00h
00h
00h 00h 00h 00h READ
00h 00h 00h 00h
121 79h
Invalid access - returns NAK n.a.
READ/R&W
User memory READ&WRITE
Access conditions
8 910 11
4567
0123
122 7Ah
fixed 00h fixed 00h fixed 00h fixed 00h
fixed 00h fixed 00h fixed 00h
Configuration See section 8.5.9
fixed 00h READ
READ
254 FEh
fixed 00h fixed 00h fixed 00h fixed 00h
fixed 00h fixed 00h fixed 00h
Session registers
(requires READ-Register command)
See section 8.9
fixed 00h READ
READ
123 7Bh
... ...
247 F7h
Invalid access - returns NAK n.a.
248 F8h
... ...
... ...
... ... Invalid access - returns NAK n.a.
251 FBh
SRAM memory (64 bytes) READ&WRITENT3H1101/NT3H1201 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 3.1 — 9 October 2014
265431 13 of 62
NXP Semiconductors NT3H1101/NT3H1201
NFC Forum type 2 Tag compliant IC with I2C interface
The SRAM is only available if the tag is powered via the VCC pin.
The SRAM is located at the end of the memory space and it is always directly accessible
by the I2C host (addresses F8h to FBh). An RF reader cannot access the SRAM memory
in normal mode (i.e., outside the Pass-through mode). The SRAM is only accessible by
the RF reader if the SRAM is mirrored onto the EEPROM memory space.
With Memory Mirror enabled (SRAM_MIRROR_ON_OFF=1 - see Section 11.2), the
SRAM can be mirrored in the User Memory (page 1 to page 119 - see Section 11.2) for
access from the RF side.
The Memory mirror must be enabled once both interfaces are ON as this feature is
disabled after each POR.
The register SRAM_MIRROR_BLOCK (see Table 10) indicates the address of the first
page of the SRAM buffer. In the case where the SRAM mirror is enabled and the READ
command is addressing blocks where the SRAM mirror is located, the SRAM mirror byte
values will be returned instead of the EEPROM byte values. Similarly, if the tag is not VCC
powered, the SRAM mirror is disabled and reading out the bytes related to the SRAM
mirror position would return the values from the EEPROM.
In the Pass-through mode (PTHRU_ON_OFF=1 - see Section 8.3.11), the SRAM is
mirrored to the fixed address 240 -255 for RF access (see Section 11) in the first memory
sector for NTAG I2C 1k and in the second memory sector for NTAG I2C 2k.
8.3.5 UID/serial number
The unique 7-byte serial number (UID) is programmed into the first 7 bytes of memory
covering page addresses 00h and 01h - see Figure 9. These bytes are programmed and
write protected in the production test.
SN0 holds the Manufacturer ID for NXP Semiconductors (04h) in accordance with
ISO/IEC 14443-3.
8.3.6 Static lock bytes
The bits of byte 2 and byte 3 of page 02h (via RF) or byte 10 and 11 address 0h (via I2C)
represent the field programmable, read-only locking mechanism (see Figure 10). Each
page from 03h (CC) to 0Fh can be individually locked by setting the corresponding locking
bit Lx to logic 1 to prevent further write access. After locking, the corresponding page
becomes read-only memory.
Fig 9. UID/serial number
aaa-012802
MSB LSB
page 0
byte
00000100 manufacturer ID for NXP Semiconductors (04h)
UID0 UID1 UID2 UID3 UID4 UID5 UID6 SAK
page 1 page 2
0123
ATQA1
7 bytes UID ATQA0
lock bytesNT3H1101/NT3H1201 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 3.1 — 9 October 2014
265431 14 of 62
NXP Semiconductors NT3H1101/NT3H1201
NFC Forum type 2 Tag compliant IC with I2C interface
The three least significant bits of lock byte 0 are the block-locking bits. Bit 2 controls
pages 0Ah to 0Fh (via RF), bit 1 controls pages 04h to 09h (via RF) and bit 0 controls
page 03h (CC). Once the block-locking bits are set, the locking configuration for the
corresponding memory area is frozen.
For example, if BL15-10 is set to logic 1, then bits L15 to L10 (lock byte 1, bit[7:2]) can no
longer be changed. The static locking and block-locking bits are set by the bytes 2 and 3
of the WRITE command to page 02h. The contents of the lock bytes are bit-wise OR’ed
and the result then becomes the new content of the lock bytes.
This process is irreversible from RF perspective. If a bit is set to logic 1, it cannot be
changed back to logic 0. From I²C perspective, the bits can be reset to “0”.
The contents of bytes 0 and 1 of page 02h are unaffected by the corresponding data bytes
of the WRITE.
The default value of the static lock bytes is 00 00h.
8.3.7 Dynamic Lock Bytes
To lock the pages of NTAG I2C starting at page address 0Fh and onwards, the dynamic
lock bytes are used. The dynamic lock bytes are located at page E2h sector 0h (NTAG I2C
1k) or address E0h sector 1 (NTAG I2C 2k). The three lock bytes cover the memory area
of 830 data bytes (NTAG I2C 1k) or 1846 data bytes (NTAG I2C 2k). The granularity is 16
pages for NTAG I2C 1k and 32 pages for NTAG I2C 2k compared to a single page for the
first 48 bytes (NTAG I2C 1k) or the first 64 bytes (NTAG I2C 2k) as shown in Figure 11 and
Figure 12.
Remark: Set all bits marked with RFUI to 0 when writing to the dynamic lock bytes.
Fig 10. Static lock bytes 0 and 1
L
7
L
6
L
5
L
4
L
CC
BL
15-10
BL
9-4
BL
CC
MSB
0
page 2
Lx locks page x to read-only
BLx blocks further locking for the memory area x
lock byte 0
lock byte 1
123
LSB
L
15
L
14
L
13
L
12
L
11
L
10
L
9
L
8
MSB LSB
aaa-006983NT3H1101/NT3H1201 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 3.1 — 9 October 2014
265431 15 of 62
NXP Semiconductors NT3H1101/NT3H1201
NFC Forum type 2 Tag compliant IC with I2C interface
Fig 11. NTAG I2C 1k Dynamic lock bytes 0, 1 and 2
Fig 12. NTAG I2C 2k Dynamic lock bytes 0, 1 and 2
aaa-008092
page 226 (E2h) 0 1 2 3 LOCK PAGE 128-143
MSB LSB
bit 7 6LOCK PAGE
112-127
LOCK PAGE
96-111
LOCK PAGE
80-95
LOCK PAGE
64-79
LOCK PAGE
48-63
LOCK PAGE
32-47
LOCK PAGE
16-31
LOCK PAGE
224-225
543210
RFUI
MSB LSB
bit 7 6RFUI
LOCK PAGE
208-223
LOCK PAGE
192-207
LOCK PAGE
176-191
LOCK PAGE
160-175
LOCK PAGE
144-159
543210
RFUI
MSB LSB
bit 7 6BL 208-225
BL 176-207
BL 144-175
BL 112-143
BL 80-111
BL 48-79
BL 16-47
543210
page 224 (E0h) 0 1 2 3
Block Locking (BL) bits
LOCK PAGE
240-271
MSB LSB
bit 7 6 5 4 3 2 1 0
MSB LSB
bit 7 6 5 4 3 2 1 0
MSB LSB
bit 7 6 5 4 3 2 1 0
aaa-012803
LOCK PAGE
208-239
LOCK PAGE
176-207
LOCK PAGE
144-175
LOCK PAGE
112-143
LOCK PAGE
80-111
LOCK PAGE
48-79
LOCK PAGE
16-47
RFUI BL 464-479
LOCK PAGE
464-479
LOCK PAGE
432-463
LOCK PAGE
400-431
LOCK PAGE
368-399
LOCK PAGE
336-367
LOCK PAGE
304-335
LOCK PAGE
272-303
BL 400-463
BL 336-399
BL 272-335
BL 208-271
BL 144-207
BL 80-143
BL 16-79NT3H1101/NT3H1201 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 3.1 — 9 October 2014
265431 16 of 62
NXP Semiconductors NT3H1101/NT3H1201
NFC Forum type 2 Tag compliant IC with I2C interface
The default value of the dynamic lock bytes is 00 00 00h. The value of Byte 3 is always
00h when read.
Reading the 3 bytes for the dynamic lock bytes and the Byte 3 (00h) from RF interface
(address E2h sector 0 (NTAG I2C 1k) or E0h sector 1 (NTAG I2C 2k) or from I2C (address
38h (NTAG I2C 1k) or 78h (NTAG I2C 2k)) will also return a fixed value for the next 12
bytes of 00h.
Like for the static lock bytes, this process of modifying the dynamic lock bytes is
irreversible from RF perspective. If a bit is set to logic 1, it cannot be changed back to
logic 0. From I²C perspective, the bits can be reset to “0”.
8.3.8 Capability Container (CC bytes)
The Capability Container CC (page 3) is programmed during the IC production according
to the NFC Forum Type 2 Tag specification (see Ref. 1). These bytes may be bit-wise
modified by a WRITE command from the I²C or RF interface. See examples for NTAG I2C
1k version in Figure 13 and for NTAG I2C 2k version in Figure 14.
The default values of the CC bytes at delivery are defined in Section 8.3.10.
Fig 13. CC bytes of NTAG I2C 1k version
Fig 14. CC bytes of NTAG I2C 2k version
aaa-012804
byte E1h 10h 6Dh 00h
Example NTAG I2C 1k version
CC bytes
CC bytes
byte 0123
page 3
default value (initialized state)
11100001 00010000 01101101 00000000
write command to page 3
00000000 00000000 00000000 00001111
result in page 3 (read-only state)
11100001 00010000 01101101 00001111
aaa-012805
Example NTAG I2C 2k version
default value (initialized state) CC bytes
11100001 00010000 11101010 00000000
write command to page 3
00000000 00000000 00000000 00001111
result in page 3 (read-only state)
11100001 00010000 11101010 00001111
data E1h 10h EAh 00h
CC bytes
byte 0 1 2 3
page 3NT3H1101/NT3H1201 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 3.1 — 9 October 2014
265431 17 of 62
NXP Semiconductors NT3H1101/NT3H1201
NFC Forum type 2 Tag compliant IC with I2C interface
8.3.9 User Memory pages
Pages 04h to E1h via the RF interface - Block 1h to 37h, plus the first 8 bytes of block 38h
via the I2C interface are the user memory read/write areas for NTAG I2C 1k version.
Pages 04h (sector 0) to DFh (sector 1) via the RF interface - Block 1h to 77h via the I2C
interface are the user memory read/write areas for NTAG I2C 2k version.
The default values of the data pages at delivery are defined in Section 8.3.10.NT3H1101/NT3H1201 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 3.1 — 9 October 2014
265431 18 of 62
NXP Semiconductors NT3H1101/NT3H1201
NFC Forum type 2 Tag compliant IC with I2C interface
8.3.10 Memory content at delivery
The capability container in page 03h and the page 04h and 05h of NTAG I2C is
pre-programmed to the initialized state according to the NFC Forum Type 2 Tag
specification (see Ref. 1) as defined in Table 4 (NTAG I2C 1k version) and Table 5 (NTAG
I
2C 2k version). This content is READ only from the RF side and READ&WRITE from the
I²C side.
The User memory contains an empty NDEF TLV.
Remark: The default content of the data pages from page 05h onwards is not defined at
delivery.
8.3.11 NTAG I2C configuration and session registers
NTAG I2C functionalities can be configured and read in two separate locations depending
if the configurations shall be effective within the communication session (session
registers) or by default after Power On Reset (POR) (configuration bits).
The configuration registers of pages E8h to E9h (sector 0 or 1 depending if it is for NTAG
I²C 1k or 2k) via the RF interface or block 3Ah or 7Ah (depending if it is for NTAG I²C 1k or
2k) via the I2C interface, see Figure 5, Figure 6, Figure 7 and Figure 8, are used to
configure the default functionalities of the NTAG I2C - see Table 6. Those bits values are
stored in the EEPROM and represent the default settings to be effective after POR. Their
values can be read & written by both interfaces when applicable and when not locked by
the register lock bits (see REG_LOCK in Table 9).
Table 4. Memory content at delivery NTAG I2C 1k version
Page Address Byte number within page
0 1 2 3
03h E1h 10h 6Dh 00h
04h 03h 00h FEh 00h
05h 00h 00h 00h 00h
Table 5. Memory content at delivery NTAG I2C 2k version
Page Address Byte number within page
0 1 2 3
03h E1h 10h EAh 00h
04h 03h 00h FEh 00h
05h 00h 00h 00h 00h
Table 6. Configuration memory NTAG I²C 1k
RF address
(sector 0)
I
2C Address Byte number
Dec Hex Dec Hex 0 1 2 3
232 E8h 58 3Ah NC_REG LAST_NDEF_BLOCK SRAM_MIRROR_
BLOCK
WDT_LS
233 E9h WDT_MS I2C_CLOCK_STR REG_LOCK 00h fixedNT3H1101/NT3H1201 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 3.1 — 9 October 2014
265431 19 of 62
NXP Semiconductors NT3H1101/NT3H1201
NFC Forum type 2 Tag compliant IC with I2C interface
The session registers Pages F8h to F9h (sector 3) via the RF interface or block FEh via
I
2C, see Table 8, are used to configure or monitor the values of the current communication
session- see Figure 6 and Figure 8. Those bits can only be read via the RF interface but
both read and written via the I2C interface.
Both the session and the configuration bits have the same register except the
REG_LOCK bits, which are only available in the configuration bits and the NS_REG bits
which are only available in the session registers. After POR, the configuration bits are
loaded into the session registers. During the communication session, the values can be
changed, but the related effect will only be visible within the communication session for
the session registers or after POR for the configuration bits. After POR, the registers
values will be again brought back to the default configuration values.
All registers and configuration default values, access and descriptions are described in
Table 9 and Table 10.
Reading and writing the session registers via I²C can only be done via the READ &
WRITE registers operation - see Section 9.8.
Table 7. Configuration memory NTAG I²C 2k
RF address
(sector 1)
I
2C Address Byte number
Dec Hex Dec Hex 0 1 2 3
232 E8h 122 7Ah NC_REG LAST_NDEF_BLOCK SRAM_MIRROR_
BLOCK
WDT_LS
233 E9h WDT_MS I2C_CLOCK_STR REG_LOCK 00h fixed
Table 8. Session registers NTAG I²C 1k and 2k
RF address
(sector 3h)
I
2C Address Byte number
Dec Hex Dec Hex 0 1 2 3
248 F8h 254 FEh NC_REG LAST_NDEF_BLOCK SRAM_MIRROR
_BLOCK
WDT_LS
249 F9h WDT_MS I2C_CLOCK_STR NS_REG 00h fixed
Table 9. Configuration bytes
Bit Field Access
via RF
Access
via I²C
Default
values
Description
NC_REG
7 I2C_RST_ON_OFF R&W R&W 0b enables soft reset through I²C repeated start -
see Section 9.3
6 - READ R&W 0b No function - keep at 0b
5 FD_OFF R&W R&W 00b defines the event upon which the signal output
on the FD pin is brought up
00b… if the field is switched off
01b… if the field is switched off or the tag is set
to the HALT state
10b… if the field is switched off or the last page
of the NDEF message has been read (defined
in LAST_NDEF_BLOCK)NT3H1101/NT3H1201 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 3.1 — 9 October 2014
265431 20 of 62
NXP Semiconductors NT3H1101/NT3H1201
NFC Forum type 2 Tag compliant IC with I2C interface
4 11b... (if FD_ON = 11b) if the field is switched off
or if last data is read by I²C (in pass-through
mode RF ---> I²C) or last data is written by I²C
(in passthrough mode I²C---> RF)
11b... (if FD_ON = 00b or 01b or 10b) if the field
is switched off
See Section 8.4 for more details
3 FD_ON R&W R&W 00b defines the event upon which the signal output
on the FD pin is brought down
00b… if the field is switched on
01b... by first valid Start-of-Frame (SoF)
10b... by selection of the tag
2 11b (in passthrough mode RF-->I²C) if the data
is ready to be read from the I²C interface
11b (in passthrough mode I²C--> RF) if the data
is read by the RF interface
See Section 8.4for more details
1 - READ R&W 0b No function - keep at 0b
0 TRANSFER_DIR R&W R&W 1b defines the data flow direction for the data
transfer
0b… From I²C to RF interface
1b… From RF to I²C interface
In case the passthrough mode is not enabled
0b… no WRITE access from the RF side
Table 9. …continuedConfiguration bytes
Bit Field Access
via RF
Access
via I²C
Default
values
DescriptionNT3H1101/NT3H1201 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 3.1 — 9 October 2014
265431 21 of 62
NXP Semiconductors NT3H1101/NT3H1201
NFC Forum type 2 Tag compliant IC with I2C interface
LAST_NDEF_BLOCK
7 Address of last BLOCK (16bytes) of NDEF
message from I²C addressing. An RF read of
the last page of the I2C block, specified by
LAST_NDEF_BLOCK sets the register
NDEF_DATA_READ to 1b and triggers
FD_OFF if FD_OFF is set to 10b
1h is page 4h (first page of the User Memory)
from RF addressing
2h is page 8h
3h is page Ch
………
37h is page DEh - memory sector 0h (last
possible page of User memory for NTAG I²C 1k)
......
77h is page DCh - memory sector 1h (last page
possible of the User Memory for NTAG I²C 2k)
6
5
4 LAST_NDEF_BLOCK R&W R&W 00h
3
2
1
0
SRAM_MIRROR_BLOCK
7 Address of first BLOCK (16bytes) of SRAM
buffer when mirrored into the User memory from
I²C addressing
1h is page 4h (first page of the User Memory)
from RF addressing
2h is page 8h
3h is page Ch
………
34h is page DEh - memory sector 0h (last
possible page of User memory for NTAG I²C 1k)
......
74h is page DCh - memory sector 1h (last page
possible of the User Memory for NTAG I²C 2k)
6
5
4 SRAM_MIRROR_ R&W R&W F8h
3 BLOCK
2
1
0
WDT_LS
7
6
5
4 WDT_LS R&W R&W 48h Least Significant byte of watchdog time
3 control register
2
1
0
Table 9. …continuedConfiguration bytes
Bit Field Access
via RF
Access
via I²C
Default
values
DescriptionNT3H1101/NT3H1201 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 3.1 — 9 October 2014
265431 22 of 62
NXP Semiconductors NT3H1101/NT3H1201
NFC Forum type 2 Tag compliant IC with I2C interface
WDT_MS
7
6
5
4 WDT_MS R&W R&W 08h Most Significant byte of watchdog time
3 control register
2
1
0
I2C_CLOCK_STR
7 0b
6 0b
5 0b
4 READ READ 0b locked to 0b
3 0b
2 0b
1 0b
0 I2C_CLOCK_STR R&W R&W 1b Enables (1b) or disable (0b) the I²C clock
stretching
REG_LOCK
7 0b
6 0b
5 READ READ 0b locked to 0b
4 0b
3 0b
2 0b
1 R&W R&W 0b… Enable writing of the configuration bytes
via I²C
1b… Disable writing of the configuration bytes
via I²C
One time programmable
0 REG_LOCK R&W R&W 00b 0b… Enable writing of the configuration bytes
via RF
1b… Disable writing of the configuration bytes
via RF
One time programmable
Table 9. …continuedConfiguration bytes
Bit Field Access
via RF
Access
via I²C
Default
values
DescriptionNT3H1101/NT3H1201 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 3.1 — 9 October 2014
265431 23 of 62
NXP Semiconductors NT3H1101/NT3H1201
NFC Forum type 2 Tag compliant IC with I2C interface
Table 10. Session register bytes
Bit Field Access
via RF
Access
via I²C
Default
values
Description
NC_REG
7 I2C_RST_ON_OFF READ R&W - see configuration bytes description
6 PTHRU_ON_OFF READ R&W 0b 1b… enables data transfer via the SRAM buffer
(Passthrough mode)
5 FD_OFF READ R&W
4
3 FD_ON READ R&W - see configuration bytes description
2
1 SRAM_MIRROR_
ON_OFF
READ R&W 0b 1b enables SRAM mirroring
0 PTHRU_DIR READ R&W see configuration bytes description
LAST_NDEF_BLOCK
7
6
5
4 LAST_NDEF_
BLOCK
READ R&W - see configuration bytes description
3
2
1
0
SRAM_MIRROR_BLOCK
7
6
5
4 SRAM_MIRROR_
BLOCK
READ R&W - see configuration bytes description
3
2
1
0
WDT_LS
7
6
5
4 WDT_LS READ R&W - see configuration bytes description
3
2
1
0NT3H1101/NT3H1201 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 3.1 — 9 October 2014
265431 24 of 62
NXP Semiconductors NT3H1101/NT3H1201
NFC Forum type 2 Tag compliant IC with I2C interface
8.4 Configurable Field Detection Pin
The field detection feature provides the capability to trigger an external device (e.g.
Controller) or switch on the connected circuitry by an external power management unit
depending on activities on the RF interface.
WDT_MS
7
6
5
4 WDT_MS READ R&W - see configuration bytes description
3
2
1
0
I2C_CLOCK_STR
7
6
5
4 READ READ - Locked to 0b
3
2
1
0 I2C_CLOCK_STR READ READ See configuration bytes description
NS_REG
7 NDEF_DATA_READ READ READ 0b 1b… all data bytes read from the address
specified in LAST_NDEF_BLOCK. value is
reset to 0b when read
6 I2C_LOCKED READ R&W 0b 1b… Memory access is locked to the I²C
interface
5 RF_LOCKED READ READ 0b 1b… Memory access is locked to the RF
interface
4 SRAM_I2C_READY READ READ 0b 1b… data is ready in SRAM buffer to be read by
I2C
3 SRAM_RF_READY READ READ 0b 1b… data is ready in SRAM buffer to be read by
RF
2 EEPROM_WR_ERR READ R&W 0b 1b… HV voltage error during EEPROM write or
erase cycle via I²C needs to be written back to
"0b" to be cleared
1 EEPROM_WR_BUSY READ READ 0b 1b… EEPROM write cycle in progress - access
to EEPROM disabled
0b… EEPROM access possible
0 RF_FIELD_PRESENT READ READ 0b 1b… RF field is detected
Table 10. …continuedSession register bytes
Bit Field Access
via RF
Access
via I²C
Default
values
DescriptionNT3H1101/NT3H1201 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 3.1 — 9 October 2014
265431 25 of 62
NXP Semiconductors NT3H1101/NT3H1201
NFC Forum type 2 Tag compliant IC with I2C interface
The conditions for the activation of the field detection signal (FD_ON) can be:
• The presence of the RF field
• The detection of a valid command (Start-of-Frame)
• The selection of the IC.
The conditions for the de-activation of the field detection signal (FD_OFF) can be:
• The absence of the RF field
• The detection of the HALT state
• The RF interface has read the last part of the NDEF message defined with
LAST_NDEF_MESSAGE
All the various combinations of configurations are described in Table 9 and illustrated in
Figure 15, Figure 16 and Figure 17 for all various combination of the filed detection signal
configuration.
The field detection pin can also be used as a handshake mechanism in the Pass-through
mode to signal to the external microcontroller if
• New data are written to SRAM on the RF interface
• Data written to SRAM from the microcontroller are read via the RF interface.
See Section 11 for more information on this handshake mechanism.NT3H1101/NT3H1201 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 3.1 — 9 October 2014
265431 26 of 62
NXP Semiconductors NT3H1101/NT3H1201
NFC Forum type 2 Tag compliant IC with I2C interface
Fig 15. Illustration of the field detection feature when configured for simple field detection
aaa-012808
I
2C
RF
NDEF_DATA_READ
I2C_LOCKED
RF_LOCKED
SRAM_I2C_READY
SRAM_RF_READY
EEPROM_WR_ERR
EEPROM_WR_BUSY
RF_FIELD_PRESENT 0b 1b 1b 0b
I2C_RST_ON_OFF
PTHRU_ON_OFF
SRAM_MIRROR_ON_OFF
PTHRU_DIR
RF field switches
ON
RF field switches
OFF
RF field
FD pin
EVENT
ON
OFF
HIGH
LOW
REGISTERS
NS_REG NC_REG
FD_ON
FD_OFF
0b
0b
0b
0b
0b
0b
0b
0b
0b
0b
0b
0b
0b
0b
0b
0b
0b
0b
0b
1b 1b
0b
0b
0b
0b
0b
0b
0b
0b
0bNT3H1101/NT3H1201 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 3.1 — 9 October 2014
265431 27 of 62
NXP Semiconductors NT3H1101/NT3H1201
NFC Forum type 2 Tag compliant IC with I2C interface
Fig 16. Illustration of the field detection feature when configured for First valid state of Frame detection
aaa-012809
I
2C
RF
NDEF_DATA_READ
I2C_LOCKED
RF_LOCKED
SRAM_I2C_READY
SRAM_RF_READY
EEPROM_WR_ERR
EEPROM_WR_BUSY
RF_FIELD_PRESENT 0b 1b 1b 0b
I2C_RST_ON_OFF
PTHRU_ON_OFF
SRAM_MIRROR_ON_OFF
PTHRU_DIR
RF field
ON
OFF
FD pin
HIGH
LOW
EVENT
First valid State-ofFrame
RF field switches
OFF or tag set to
the HALT state
REGISTERS
NS_REG
0b 0b
0b 0b
0b 0b
0b 0b
1b
0b 0b
0b 0b
0b 0b
0b
NC_REG
0b 0b
0b 0b
FD_ON
0b 0b
1b
1b 1b
FD_OFF
0b 0b
1b 1b
0bNT3H1101/NT3H1201 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 3.1 — 9 October 2014
265431 28 of 62
NXP Semiconductors NT3H1101/NT3H1201
NFC Forum type 2 Tag compliant IC with I2C interface
8.5 Watchdog timer
In order to allow the I²C interface to perform all necessary commands (READ, WRITE...),
the memory access remains locked to the I²C interface til the register I2C_LOCKED is
cleared by the host - see Table 10.
In order however to avoid that the memory stays 'locked' to the I²C for a long period of
time, it is possible to program a watchdog timer to unlock the I2C host from the tag, so that
the RF reader can access the tag after a period of time of inactivity. The host itself will not
be notified of this event directly, but the NS_REG register is updated accordingly (the
register bit I2C_LOCKED will be cleared - see Table 10).
The default value is set to 20 ms (848h), but the watch dog timer can be freely set from
0001h (9.43 s) up to FFFFh (617.995 s). The timer starts ticking when the
communication between the NTAG I2C and the I2C interface starts. In case the
Fig 17. Illustration of the field detection feature when configured for selection of the tag detection
aaa-012810
I
2C
RF
NDEF_DATA_READ
I2C_LOCKED
RF_LOCKED
SRAM_I2C_READY
SRAM_RF_READY
EEPROM_WR_ERR
EEPROM_WR_BUSY
RF_FIELD_PRESENT 0b 1b 1b 0b
I2C_RST_ON_OFF
PTHRU_ON_OFF
1b 1b 1b 1b
1b 1b 1b 1b
SRAM_MIRROR_ON_OFF
PTHRU_DIR 1b 1b 1b 1b
RF field
ON
OFF
FD pin
HIGH
LOW
EVENT
Selection of the tag RF field switches OFF or RF read the last 4 bytes of the
NDEF message defined in LAST_NDEF_MESSAGE
REGISTERS
NS_REG
0b 0b
0b 0b
0b 0b
0b 0b
0b 0b
0b 0b
0b 0b
NC_REG
0b 0b
0b 0b
FD_ON 0b
0b 0b
0b
FD_OFF 0b 0bNT3H1101/NT3H1201 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 3.1 — 9 October 2014
265431 29 of 62
NXP Semiconductors NT3H1101/NT3H1201
NFC Forum type 2 Tag compliant IC with I2C interface
communication with the I2C is still going on after the watchdog timer expires, the
communication will continue until the communication has completed. Then the status
register I2C_LOCKED will be immediately cleared.
In the case where the communication with the I2C interface has completed before the end
of the timer and the status register I2C_LOCKED was not cleared by the host, it will be
cleared at the end of the watchdog timer.
The watchdog timer is only effective if the VCC pin is powered and will be reset and
stopped if the NTAG I2C is not VCC powered or if the register status I2C_LOCKED is set
to 0 and RF_LOCKED is set to 1.
8.6 Energy harvesting
The NTAG I2C provides the capability to supply external low power devices with energy
generated from the RF field of a NFC device.
The voltage and current from the energy harvesting depend on various parameters, such
as the strength of the RF field, the tag antenna size, or the distance from the NFC device.
At room temperature, NTAG I2C could provide typically 5 mA at 2 V on the VOUT pin with
an NFC Phone.
Operating NTAG I2C in energy harvesting mode requires a number of precautions:
• A significant buffer capacitor in the range of typically 10nF up to 100 nF maximum
shall be connected between VOUT and GND close to the terminals.
• If NTAG I2C also powers the I2C bus, then VCC must be connected to VOUT, and
pull-up resistors on the SCL and SDA pins must be sized to control SCL and SDA sink
current when those lines are pulled low by NTAG I2C or the I2C host
• If NTAG I2C also powers the Field Detect bus, then the pull-up resistor on the Field
Detect line must be sized to control the sink current into the Field Detect pin when
NTAG I2C pulls it low
• The NFC reader device communicating with NTAG I2C shall apply polling cycles
including an RF Field Off condition of at least 5.1 ms as defined in NFC Forum Activity
specification (see Ref. 4, chapter 6).
Note that increasing the output current on the Vout decreases the RF communication
range.NT3H1101/NT3H1201 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 3.1 — 9 October 2014
265431 30 of 62
NXP Semiconductors NT3H1101/NT3H1201
NFC Forum type 2 Tag compliant IC with I2C interface
9. I²C commands
For details about I2C interface refer to Ref. 3.
The NTAG I2C supports the I2C protocol. This protocol is summarized in Figure 18. Any
device that sends data onto the bus is defined as a transmitter, and any device that reads
the data from the bus is defined as a receiver. The device that controls the data transfer is
known as the “bus master”, and the other as the “slave” device. A data transfer can only
be initiated by the bus master, which will also provide the serial clock for synchronization.
The NTAG I2C is always a slave in all communications.
9.1 Start condition
Start is identified by a falling edge of Serial Data (SDA), while Serial Clock (SCL) is stable
in the high state. A Start condition must precede any data transfer command. The NTAG
I
2C continuously monitors SDA (except during a Write cycle) and SCL for a Start
condition, and will not respond unless one is given.
9.2 Stop condition
Stop is identified by a rising edge of SDA while SCL is stable and driven high. A Stop
condition terminates communication between the NTAG I2C and the bus master. A Stop
condition at the end of a Write command triggers the internal Write cycle.
Fig 18. I2C bus protocol
SCL
SDA
SCL 1 2 3 7 8 9
1 2 3 7 8 9
MSB ACK
MSB ACK
Start
Condition
SDA
Input
SDA
Change
Stop
Condition
Stop
Condition
Start
Condition
SDA
SCL
SDA
001aao231NT3H1101/NT3H1201 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 3.1 — 9 October 2014
265431 31 of 62
NXP Semiconductors NT3H1101/NT3H1201
NFC Forum type 2 Tag compliant IC with I2C interface
9.3 Soft reset feature
In the case where the I2C interface is constantly powered on, NTAG I2C can trigger a reset
of the I2C interface via its soft reset feature- see Table 9.
When this feature is enabled, if the microcontroller does not issue a stop condition
between two start conditions, this situation will trigger a reset of the I2C interface and
hence may hamper the communication via the I2C interface.
9.4 Acknowledge bit (ACK)
The acknowledge bit is used to indicate a successful byte transfer. The bus transmitter,
whether it is the bus master or slave device, releases Serial Data (SDA) after sending
eight bits of data. During the 9th clock pulse period, the receiver pulls Serial Data (SDA)
low to acknowledge the receipt of the eight data bits.
9.5 Data input
During data input, the NTAG I2C samples SDA on the rising edge of SCL. For correct
device operation, SDA must be stable during the rising edge of SCL, and the SDA signal
must change only when SCL is driven low.
9.6 Addressing
To start communication between a bus master and the NTAG I2C slave device, the bus
master must initiate a Start condition. Following this initiation, the bus master sends the
device address. The NTAG I2C address from I2C consists of a 7-bit device identifier (see
Table 11 for default value).
The 8th bit is the Read/Write bit (RW). This bit is set to 1 for Read and 0 for Write
operations.
If a match occurs on the device address, the NTAG I2C gives an acknowledgment on SDA
during the 9th bit time. If the NTAG I2C does not match the device select code, it deselects
itself from the bus and clear the register I2C_LOCKED (see Table 8).
[1] Initial values - can be changed.
The I2C address of the NTAG I2C (byte 0 - block 0h) can only be modified by the I2C
interface. Both interfaces have no READ access to this address and a READ command
from the RF or I²C interface to this byte will only return 04h (manufacturer ID for NXP
Semiconductors - see Figure 9).
Table 11. Default NTAG I2C address from I2C
Device address R/W
b7 b6 b5 b4 b3 b2 b1 b0
Value 1[1] 0[1] 1[1] 0[1] 1 [1] 0 [1] 1 [1] 1/0xxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxx x x x xxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxx xx xx xxxxx
xxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxx xxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxx x x
xxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxx
xxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxx xxx NT3H1101/NT3H1201 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
COMPANY PUBLIC
Product data sheet Rev. 3.1 — 9 October 2014
265431 32 of 62
NXP Semiconductors NT3H1101/NT3H1201
NFC Forum type 2 Tag compliant IC with I2C interface
9.7 READ and WRITE Operation
Fig 19. I2C READ and WRITE operation
aaa-012811
Host 7 bits SA and ‘0’
Tag
Tag
Start Stop
Stop
D0 D1
D0 D1
D15
MEMA D15
A
A
A
A
A
A
A
A
A
Host Start 7 bits SA and ‘0’
Write:
Read:
MEMA Stop Start 7 bits SA and ‘1’
A
ANT3H1101/NT3H1201 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 3.1 — 9 October 2014
265431 33 of 62
NXP Semiconductors NT3H1101/NT3H1201
NFC Forum type 2 Tag compliant IC with I2C interface
The READ and WRITE operation handle always 16 bytes to be read or written (one block
- see Figure 8)
For the READ operation (see Figure 19), following a Start condition, the bus master/host
sends the NTAG I2C slave address code (SA - 7 bits) with the Read/Write bit (RW) reset to
0. The NTAG I2C acknowledges this (A), and waits for one address byte (MEMA), which
should correspond to the address of the block of memory (SRAM or EEPROM) that is
intended to be read. The NTAG I2C responds to a valid address byte with an acknowledge
(A). A Stop condition can be then issued. Then the host again issues a start condition
followed by the NTAG I2C slave address with the Read/Write bit set to “1”. The NTAG I2C
acknowledges this (A) and sends the first byte of data read (D0).The bus master/host
acknowledges it (A) and the NTAG I2C will subsequently transmit the following 15 bytes of
memory read with an acknowledge from the host after every byte. After the last byte of
memory data has been transmitted by the NTAG I2C, the bus master/host will
acknowledge it and issue a Stop condition.
For the WRITE operation (see Figure 19), following a Start condition, the bus master/host
sends the NTAG I2C slave address code (SA - 7 bits) with the Read/Write bit (RW) reset to
0. The NTAG I2C acknowledges this (A), and waits for one address byte (MEMA), which
should correspond to the address of the block of memory (SRAM or EEPROM) that is
intended to be written. The NTAG I2C responds to a valid address byte with an
acknowledge (A) and, in the case of a WRITE operation, the bus master/host starts
transmitting each 16 bytes (D0...D15) that shall be written at the specified address with an
acknowledge of the NTAG I²C after each byte (A). After the last byte acknowledge from
the NTAG I²C, the bus master/host issues a Stop condition.
The memory address accessible via the READ and WRITE operations can only
correspond to the EEPROM or SRAM (respectively 00h to 3Ah or F8h to FBh for NTAG
I²C 1k and 00h to 7Ah or F8h to FBh for NTAG I²C 2k).xxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxx x x x xxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxx xx xx xxxxx
xxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxx xxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxx x x
xxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxx
xxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxx xxx NT3H1101/NT3H1201 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
COMPANY PUBLIC
Product data sheet Rev. 3.1 — 9 October 2014
265431 34 of 62
NXP Semiconductors NT3H1101/NT3H1201
NFC Forum type 2 Tag compliant IC with I2C interface
9.8 WRITE and READ register operation
In order to modify or read the session register bytes (see Table 10), NTAG I²C requires the WRITE and READ register
operation (see Figure 20).
Fig 20. WRITE and READ register operation
aaa-012812
Host 7 bits SA and ‘0’
Tag
Tag
Start
Stop
MEMA REGA
A
A
A
Host Start 7 bits SA and ‘0’
A
Write:
Read:
Stop Start 7 bits SA and ‘1’
Stop
MEMA
MASK REGDAT
REGDAT
A
REGA
A
A
A
A
ANT3H1101/NT3H1201 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 3.1 — 9 October 2014
265431 35 of 62
NXP Semiconductors NT3H1101/NT3H1201
NFC Forum type 2 Tag compliant IC with I2C interface
For the READ register operation, following a Start condition the bus master/host sends the
NTAG I²C slave address code (SA - 7 bits) with the Read/Write bit (RW) reset to 0. The
NTAG I2C acknowledges this (A), and waits for one address byte (MEMA) which
corresponds to the address of the block of memory with the session register bytes (FEh).
The NTAG I2C responds to the address byte with an acknowledge (A). Then the bus
master/host issues a register address (REGA), which corresponds to the address of the
targeted byte inside the block FEh (00h, 01h...to 07h) and then waits for the Stop
condition.
Then the bus master/host again issues a start condition followed by the NTAG I²C slave
address with the Read/Write bit set to “1”. The NTAG I²C acknowledges this (A), and
sends the selected byte of session register data (REGDAT) within the block FEh. The bus
master/host will acknowledge it and issue a Stop condition.
For the WRITE register operation, following a Start condition, the bus master/host sends
the NTAG I²C slave address code (SA - 7 bits) with the Read/Write bit (RW) reset to 0.
The NTAG I2C acknowledges this (A), and waits for one address byte (MEMA), which
corresponds to the address of the block of memory within the session register bytes
(FEh). After the NTAG I2C acknowledge (A), the bus master/host issues a MASK byte that
defines exactly which bits shall be modified by a “1” bit value at the corresponding bit
position. Following the NTAG I²C acknowledge (A), the new register data (one byte -
REGDAT) to be written is transmitted by the bus master/host. The NTAG I²C
acknowledges it (A), and the bus master/host issues a stop condition.NT3H1101/NT3H1201 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 3.1 — 9 October 2014
265431 36 of 62
NXP Semiconductors NT3H1101/NT3H1201
NFC Forum type 2 Tag compliant IC with I2C interface
10. RF Command
NTAG activation follows the ISO/IEC 14443 Type A specification. After NTAG I2C has
been selected, it can either be deactivated using the ISO/IEC 14443 HALT command, or
NTAG commands (e.g., READ or WRITE) can be performed. For more details about the
card activation refer to Ref. 2.
10.1 NTAG I2C command overview
All available commands for NTAG I2C are shown in Table 12.
[1] Unless otherwise specified, all commands use the coding and framing as described in Ref. 1.
10.2 Timing
The command and response timing shown in this document are not to scale and values
are rounded to 1 s.
All given command and response times refer to the data frames, including start of
communication and end of communication. They do not include the encoding (like the
Miller pulses). An NFC device data frame contains the start of communication (1
“start bit”) and the end of communication (one logic 0 + 1 bit length of unmodulated
carrier). An NFC tag data frame contains the start of communication (1 “start bit”) and the
end of communication (1 bit length of no subcarrier).
The minimum command response time is specified according to Ref. 1 as an integer n,
which specifies the NFC device to NFC tag frame delay time. The frame delay time from
NFC tag to NFC device is at least 87 s. The maximum command response time is
specified as a time-out value. Depending on the command, the TACK value specified for
command responses defines the NFC device to NFC tag frame delay time. It does it for
either the 4-bit ACK value specified or for a data frame.
All timing can be measured according to the ISO/IEC 14443-3 frame specification as
shown for the Frame Delay Time in Figure 21. For more details refer to Ref. 2.
Table 12. Command overview
Command[1] ISO/IEC 14443 NFC FORUM Command code
(hexadecimal)
Request REQA SENS_REQ 26h (7 bit)
Wake-up WUPA ALL_REQ 52h (7 bit)
Anticollision CL1 Anticollision CL1 SDD_REQ CL1 93h 20h
Select CL1 Select CL1 SEL_REQ CL1 93h 70h
Anticollision CL2 Anticollision CL2 SDD_REQ CL2 95h 20h
Select CL2 Select CL2 SEL_REQ CL2 95h 70h
Halt HLTA SLP_REQ 50h 00h
GET_VERSION - - 60h
READ - READ 30h
FAST_READ - - 3Ah
WRITE - WRITE A2h
SECTOR_SELECT SECTOR_SELECT C2hNT3H1101/NT3H1201 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 3.1 — 9 October 2014
265431 37 of 62
NXP Semiconductors NT3H1101/NT3H1201
NFC Forum type 2 Tag compliant IC with I2C interface
Remark: Due to the coding of commands, the measured timings usually excludes (a part
of) the end of communication. Consider this factor when comparing the specified with the
measured times.
10.3 NTAG ACK and NAK
NTAG uses a 4 bit ACK / NAK as shown in Table 13.
10.4 ATQA and SAK responses
NTAG I2C replies to a REQA or WUPA command with the ATQA value shown in Table 14.
It replies to a Select CL2 command with the SAK value shown in Table 15. The 2-byte
ATQA value is transmitted with the least significant byte first (44h).
Fig 21. Frame Delay Time (from NFC device to NFC tag), TACK and TNAK
last data bit transmitted by the NFC device
FDT = (n* 128 + 84)/fc
first modulation of the NFC TAG
FDT = (n* 128 + 20)/fc
aaa-006986
128/fc
logic „1“
128/fc
logic „0“
256/fc
end of communication (E)
256/fc
end of communication (E)
128/fc
start of
communication (S)
communication (S)
128/fc
start of
Table 13. ACK and NAK values
Code (4-bit) ACK/NAK
Ah Acknowledge (ACK)
0h NAK for invalid argument (i.e. invalid page address)
1h NAK for parity or CRC error
3h NAK for Arbiter locked to I²C
7h NAK for EEPROM write error
Table 14. ATQA response of the NTAG I2C
Bit number
Sales type Hex value 16 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1
NTAG I2C 00 44h 0 0 0 0 0 0 0 0 0 1 0 0 0 1 0 0
Table 15. SAK response of the NTAG I2C
Bit number
Sales type Hex value 8 7 6 5 4 3 2 1
NTAG I2C 00h 00000000NT3H1101/NT3H1201 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 3.1 — 9 October 2014
265431 38 of 62
NXP Semiconductors NT3H1101/NT3H1201
NFC Forum type 2 Tag compliant IC with I2C interface
Remark: The ATQA coding in bits 7 and 8 indicate the UID size according to
ISO/IEC 14443 independent from the settings of the UID usage.
Remark: The bit numbering in the ISO/IEC 14443 specification starts with LSB = bit 1 and
not with
LSB = bit 0. So 1 byte counts bit 1 to bit 8 instead of bit 0 to 7.
10.5 GET_VERSION
The GET_VERSION command is used to retrieve information about the NTAG family, the
product version, storage size and other product data required to identify the specific NTAG
I
2C.
This command is also available on other NTAG products to have a common way of
identifying products across platforms and evolution steps.
The GET_VERSION command has no arguments and returns the version information for
the specific NTAG I2C type. The command structure is shown in Figure 22 and Table 16.
Table 17 shows the required timing.
[1] Refer to Section 10.2 “Timing”.
Fig 22. GET_VERSION command
Table 16. GET_VERSION command
Name Code Description Length
Cmd 60h Get product version 1 byte
CRC - CRC according to Ref. 1 2 bytes
Data - Product version information 8 bytes
NAK see Table 13 see Section 10.3 4-bit
Table 17. GET_VERSION timing
These times exclude the end of communication of the NFC device.
TACK/NAK min TACK/NAK max TTimeOut
GET_VERSION n=9[1] TTimeOut 5 ms
CRC
CRC
NFC device Cmd
NTAG ,,ACK'' Data
283 µs 868 µs
NTAG ,,NAK'' NAK
Time out TTimeOut
TNAK
TACK
57 µs
aaa-006987NT3H1101/NT3H1201 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 3.1 — 9 October 2014
265431 39 of 62
NXP Semiconductors NT3H1101/NT3H1201
NFC Forum type 2 Tag compliant IC with I2C interface
The most significant 7 bits of the storage size byte are interpreted as an unsigned integer
value n. As a result, it codes the total available user memory size as 2n. If the least
significant bit is 0b, the user memory size is exactly 2n. If the least significant bit is 1b, the
user memory size is between 2n and 2n+1.
The user memory for NTAG I²C 1k is 888 bytes. This memory size is between 512 bytes
and 1024 bytes. Therefore, the most significant 7 bits of the value 13h, are interpreted as
9d, and the least significant bit is 1b.
The user memory for NTAG I²C 2k is 1904 bytes. This memory size is between 1024
bytes and 2048 bytes. Therefore, the most significant 7 bits of the value 15h, are
interpreted as 10d, and the least significant bit is 1b.
10.6 READ
The READ command requires a start page address, and returns the 16 bytes of four
NTAG I2C pages. For example, if address (Addr) is 03h then pages 03h, 04h, 05h, 06h are
returned. Special conditions apply if the READ command address is near the end of the
accessible memory area. For details on those cases and the command structure refer to
Figure 23 and Table 19.
Table 20 shows the required timing.
Table 18. GET_VERSION response for NTAG I²C 1k and 2k
Byte no. Description NTAG I²C 1k NTAG I²C 2k Interpretation
0 fixed Header 00h 00h
1 vendor ID 04h 04h NXP Semiconductors
2 product type 04h 04h NTAG
3 product subtype 05h 05h 50 pF I2C, Field detection
4 major product version 02h 02h 2
5 minor product version 01h 01h V1
6 storage size 13h 15h see following information
7 protocol type 03h 03h ISO/IEC 14443-3 compliant
Fig 23. READ command
CRC
CRC
NFC device Cmd Addr
Data NTAG ,,ACK''
368 µs 1548 µs
NTAG ,,NAK'' NAK
Time out TTimeOut
TNAK
TACK
57 µs
aaa-006988NT3H1101/NT3H1201 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 3.1 — 9 October 2014
265431 40 of 62
NXP Semiconductors NT3H1101/NT3H1201
NFC Forum type 2 Tag compliant IC with I2C interface
[1] Refer to Section 10.2 “Timing”.
In the initial state of NTAG I2C, all memory pages are allowed as Addr parameter to the
READ command:
• Page address from 00h to E2h and E8h for NTAG I²C 1k
• Page address from 00h to FFh (sector 0h), from page 00h to E0h and E8h (sector 1h)
for NTAG I²C 2k
• SRAM buffer when Passthrough is ON
Addressing a start memory page beyond the limits above results in a NAK response from
NTAG I2C.
In case a READ command addressing start with a valid memory area but extends over an
invalid memory area, the content of the invalid memory area will be reported as 00h.
10.7 FAST_READ
The FAST_READ command requires a start page address and an end page address and
returns all n*4 bytes of the addressed pages. For example, if the start address is 03h and
the end address is 07h, then pages 03h, 04h, 05h, 06h and 07h are returned.
For details on those cases and the command structure, refer to Figure 24 and Table 21.
Table 22 shows the required timing.
Table 19. READ command
Name Code Description Length
Cmd 30h read four pages 1 byte
Addr - start page address 1 byte
CRC - CRC according to Ref. 1 2 bytes
Data - Data content of the addressed pages 16 bytes
NAK see Table 13 see Section 10.3 4-bit
Table 20. READ timing
These times exclude the end of communication of the NFC device.
TACK/NAK min TACK/NAK max TTimeOut
READ n=9[1] TTimeOut 5 msNT3H1101/NT3H1201 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 3.1 — 9 October 2014
265431 41 of 62
NXP Semiconductors NT3H1101/NT3H1201
NFC Forum type 2 Tag compliant IC with I2C interface
[1] Refer to Section 10.2 “Timing”.
In the initial state of NTAG I2C, all memory pages are allowed as StartAddr parameter to
the FAST_READ command:
• Page address from 00h to E2h and E8h for NTAG I²C 1k
• Page address from 00h to FFh (sector 0h), from page 00h to E0h and E8h (sector 1h)
for NTAG I²C 2k
• SRAM buffer when Passthrough mode s ON
If the start addressed memory page (StartAddr) is outside of accessible area, NTAG I2C
replies a NAK.
In case the FAST_READ command starts with a valid memory area but extends over an
invalid memory area, the content of the invalid memory area will be reported as 00h.
The EndAddr parameter must be equal to or higher than the StartAddr.
Remark: The FAST_READ command is able to read out the entire memory of one sector
with one command. Nevertheless, the receive buffer of the NFC device must be able to
handle the requested amount of data as no chaining is possible.
Fig 24. FAST_READ command
Table 21. FAST_READ command
Name Code Description Length
Cmd 3Ah read multiple pages 1 byte
StartAddr - start page address 1 byte
EndAddr - end page address 1 byte
CRC - CRC according to Ref. 1 2 bytes
Data - data content of the addressed pages n*4 bytes
NAK see Table 13 see Section 10.3 4-bit
Table 22. FAST_READ timing
These times exclude the end of communication of the NFC device.
TACK/NAK min TACK/NAK max TTimeOut
FAST_READ n=9[1] TTimeOut 5 ms
CRC
CRC
NFC device Cmd StartAddr
NTAG ,,ACK'' Data
453 µs depending on nr of read pages
NTAG ,,NAK'' NAK
Time out TTimeOut
TNAK
TACK
57 µs
EndAddr
aaa-006989NT3H1101/NT3H1201 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 3.1 — 9 October 2014
265431 42 of 62
NXP Semiconductors NT3H1101/NT3H1201
NFC Forum type 2 Tag compliant IC with I2C interface
10.8 WRITE
The WRITE command requires a block address, and writes 4 bytes of data into the
addressed NTAG I2C page. The WRITE command is shown in Figure 25 and Table 23.
Table 24 shows the required timing.
[1] Refer to Section 10.2 “Timing”.
In the initial state of NTAG I2C, the following memory pages are valid Addr parameters to
the WRITE command:
• Page address from 02h to E2h, E8h and E9h (sector 0h) for NTAG I²C 1k
• Page address from 02h to FFh (sector 0h), from 00h to E2h, E8h and E9h (sector 1h)
for NTAG I²C 2k
• SRAM buffer address in Passthrough mode
Addressing a memory page beyond the limits above results in a NAK response from
NTAG I2C.
Pages that are locked against writing cannot be reprogrammed using any write command.
The locking mechanisms include static and dynamic lock bits, as well as the locking of the
configuration pages.
Fig 25. WRITE command
Table 23. WRITE command
Name Code Description Length
Cmd A2h write one page 1 byte
Addr - page address 1 byte
CRC - CRC according to Ref. 1 2 bytes
Data - data 4 bytes
NAK see Table 13 see Section 10.3 4-bit
Table 24. WRITE timing
These times exclude the end of communication of the NFC device.
TACK/NAK min TACK/NAK max TTimeOut
WRITE n=9[1] TTimeOut 10 ms
NFC device Cmd Addr CRC
NTAG ,,ACK''
708 µs
NTAG ,,NAK'' NAK
Time out TTimeOut
TNAK
TACK
57 µs
ACK
57 µs
Data
aaa-006990NT3H1101/NT3H1201 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 3.1 — 9 October 2014
265431 43 of 62
NXP Semiconductors NT3H1101/NT3H1201
NFC Forum type 2 Tag compliant IC with I2C interface
10.9 SECTOR SELECT
The SECTOR SELECT command consists of two commands packet: the first one is the
SECTOR SELECT command (C2h), FFh and CRC. Upon an ACK answer from the Tag,
the second command packet needs to be issued with the related sector address to be
accessed and 3 bytes RFU.
To successfully access to the requested memory sector, the tag shall issue a passive
ACK, which is sending NO REPLY for more than 1ms after the CRC of the second
command set.
The SECTOR SELECT command is shown in Figure 26 and Table 25.
Table 26 shows the required timing.
Fig 26. SECTOR_SELECT command
Table 25. SECTOR_SELECT command
Name Code Description Length
Cmd C2h sector select 1 byte
FFh - 1 byte
CRC - CRC according to Ref. 1 2 bytes
SecNo - Memory sector to be selected
(00h-FEh)
1 byte
NAK see Table 13 see Section 10.3 4-bit
aaa-014051
NFC device Cmd FFh CRC
SecNo 00h 00h 00h CRC
708 µs
NTAG I2C ,,NAK''
NTAG I2C ,,ACK''
NTAG I2C ,,NAK''
NTAG I2C ,,ACK''
NAK
Time out
NFC device
TTimeOut
TNAK
TACK
57 µs
ACK
57 µs
NAK
<1ms
>1ms
57 µs
Passive ACK
SECTOR SELECT packet 2
SECTOR SELECT packet 1
(any reply)
(no reply)NT3H1101/NT3H1201 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 3.1 — 9 October 2014
265431 44 of 62
NXP Semiconductors NT3H1101/NT3H1201
NFC Forum type 2 Tag compliant IC with I2C interface
[1] Refer to Section 10.2 “Timing”.
Table 26. SECTOR_SELECT timing
These times exclude the end of communication of the NFC device.
TACK/NAK min TACK/NAK max TTimeOut
SECTOR SELECT n=9[1] TTimeOut 10 msNT3H1101/NT3H1201 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 3.1 — 9 October 2014
265431 45 of 62
NXP Semiconductors NT3H1101/NT3H1201
NFC Forum type 2 Tag compliant IC with I2C interface
11. Communication and arbitration between RF and I²C interface
If both interfaces are powered by their corresponding source, only one interface shall
have access according to the "first-come, first-serve" principle.
In NS_REG, the two status bits I2C_LOCKED and RF_LOCKED reflect the status of the
NTAG I²C memory access and indicate which interface is locking the memory access. At
power on, both bits are 0, setting the arbitration in idle mode.
In the case arbiter locks to the I²C interface, an RF reader still can access the session
registers. If the ISO state machine is in 'active' state, only the SECTOR SELECT
command is allowed. But any other command requiring EEPROM access like READ or
WRITE is handled as an illegal command and replied to with a special NAK value.
In the case where the memory access is locked to the RF interface, the I²C host still can
access the NFC register, by issuing a 'Register READ/WRITE' command. All other read or
write commands will be replied to with a NACK to the I²C host.
11.1 Non Pass-through Mode
PTHRU_ON_OFF = 0 (see Table 10) indicates non-Pass-through mode.
11.1.1 I²C interface access
If the tag is in the IDLE or HALT state (RF state after POR or HALT-command) and the
correct I²C slave address of NTAG I²C is specified following the START condition, bit
I2C_LOCKED will be automatically set to “1b”. If I2C_LOCKED=,1 the I²C interface has
access to the tag memory and the tag will respond with a NACK to any memory
READ/WRITE command on the RF interface other than reading the register bytes
command during this time.
I2C_LOCKED must be either reset to 0 at the end of the I²C sequence or wait until the end
of the watch dog timer.
11.1.2 RF interface access
The arbitration will allow the RF interface to read and write accesses to EEPROM only
when I2C_LOCKED is not set to “1b”.
RF_LOCKED is automatically set to “1b” if the tag receives a valid command (EEPROM
Access Commands) on the RF interface. If RF_LOCKED=1, the tag is locked to the RF
interface and will not respond to any command from the I²C interface other than READ
register command (see Table 10).
RF_LOCKED is automatically set to 0 in one of the following conditions
• At POR or if the RF field is switched off
• If the tag is set to the HALT state with a HALT command on the RF interface
• If the memory access command is finished on the RF interface
When the RF interface has read the last page of the NDEF message specified in
LAST_NDEF_BLOCK (see Table 9 and Table 10) the bit NDEF_DATA_READ - in the
register NS_REG see Table 10 - is set to “1b” and indicates to the I²C interface that, for
example, new NDEF data can be written. NT3H1101/NT3H1201 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 3.1 — 9 October 2014
265431 46 of 62
NXP Semiconductors NT3H1101/NT3H1201
NFC Forum type 2 Tag compliant IC with I2C interface
11.2 SRAM buffer mapping with Memory Mirror enabled
With SRAM_MIRROR_ON_OFF= 1, the SRAM buffer mirroring is enabled. This mode
cannot be combined with the pass through mode (see Section 11.3).
With the Memory Mirror enabled, the SRAM is now mapped into the User Memory from
the RF interface perspective using the SRAM mirror lower page address specified in
SRAM_MIRROR_BLOCK byte (Table 9 and Table 10). See Figure 27 (NTAG I²C 1k) and
Figure 28(NTAG I²C 2k) for an illustration of this SRAM memory mapping when
SRAM_MIRROR_BLOCK is set to 1h. The SRAM buffer will be then available in 2
locations: inside the User memory and at the end of the first or second memory sector
(respectively NTAG I²C 1k or NTAG I²C 2k).
The tag must be VCC powered to make this mode work, because without VCC, the SRAM
will not be accessible via RF powered only.
When mapping the SRAM buffer to the User Memory, the User shall be aware that all data
written into the SRAM part of the User memory will be lost once the NTAG I²C is no longer
powered from the I²C side (as SRAM is a volatile memory).NT3H1101/NT3H1201 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 3.1 — 9 October 2014
265431 47 of 62
NXP Semiconductors NT3H1101/NT3H1201
NFC Forum type 2 Tag compliant IC with I2C interface
Fig 27. Illustration of the SRAM memory addressing via the RF interface (with Memory
mirror enabled and SRAM_MIRROR_BLOCK set to 1h) for the NTAG I²C 1k
aaa-012813
Sector adr.
Hex. Dec. Hex. 0 1 2 3 conditions
Page address
0h 0 0h
1h ......
1 1h
2 2h
3 3h
4 4h
19 13h
225 E1h
226 E2h
227 E3h
228 E4h
229 E5h
230 E6h
231 E7h
232 E8h
233 E9h
234 EAh
255 FFh
......
......
......
...
Serial number
Invalid access - returns NAK
Serial number Internal data
00h
Internal data Lock bytes
Byte number within a page
READ
Capability Container (CC) READ
READ
READ/R&W
n.a.
Dynamic lock bytes R&W/R
2h ...... Invalid access - returns NAK n.a.
3h 0 0h
Invalid access - returns NAK n.a.
Invalid access - returns NAK n.a.
Invalid access - returns NAK n.a.
User memory
SRAM memory (16 pages) with memory mirror mode enabled
only with SRAM_MIRROR_BLOCK set to 1h
READ&WRITE
249 F9H
248 F8H
Session registers See section 8.5.9
Configuration See section 8.5.9
255 FFH
...... Invalid access - returns NAK n.a.
AccessNT3H1101/NT3H1201 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 3.1 — 9 October 2014
265431 48 of 62
NXP Semiconductors NT3H1101/NT3H1201
NFC Forum type 2 Tag compliant IC with I2C interface
11.3 Pass-through mode
PTHRU_ON_OFF = 1 (see Table 10) enables and indicates Pass-through mode.
To handle large amount of data transfer from one interface to the other, NTAG I²C offers
the Pass-through mode where data is transferred via a 64 byte SRAM buffer. This buffer
offers fast write access and unlimited WRITE endurance as well as an easy handshake
mechanism between the 2 interfaces.
Fig 28. Illustration of the SRAM memory addressing via the RF interface (with Memory
mirror enabled and SRAM_MIRROR_BLOCK set to 1h) for the NTAG I²C 2k
aaa-012814
Sector adr.
Hex. Dec. Hex. 0 1 2 3 conditions
Page address
0h 0 0h
2h ......
1 1h
1h
2 2h
3 3h
4 4h
19 13h
225 FFh
226 E2h
227 E3h
228 E4h
223 DFh
224 E0h
225 E1h
229 E5h
230 E6h
231 E7h
232 E8h
233 E9h
234 EAh
255 FFh
......
......
......
......
...
Serial number
Invalid access - returns NAK
Serial number Internal data
00h
Internal data Lock bytes
Byte number within a page
READ
Capability Container (CC) READ
READ
READ/R&W
n.a.
Dynamic lock bytes R&W/R
3h 0 0h
Invalid access - returns NAK n.a.
Invalid access - returns NAK n.a.
Invalid access - returns NAK n.a.
User memory
READ&WRITE
249 F9H
248 F8H
Session registers See section 8.5.9
Configuration See section 8.5.9
255 FFH
...... Invalid access - returns NAK n.a.
Access
0 0h
1 1h
......
......
SRAM memory (16 pages) with memory mirror mode enabled
only with SRAM_MIRROR_BLOCK set to 1hNT3H1101/NT3H1201 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 3.1 — 9 October 2014
265431 49 of 62
NXP Semiconductors NT3H1101/NT3H1201
NFC Forum type 2 Tag compliant IC with I2C interface
This buffer is mapped directly at the end of the sector 0h (NTAG I²C 1k) or sector 1h
(NTAG I²C 2k) of the memory (from the RF interface perspective).
In both cases, the principle of access to the SRAM buffer via the RF and I²C interface is
exactly the same (see Section 11.3.2 and Section 11.3.3).
The data flow direction must be set with the PTHRU_DIR bit (see Table 10) within the
current communication session with the session registers (in this case, it can only be set
via the I²C interfaces) or for the configuration bits after POR (in this case both RF and I²C
interface can set it). This pass through direction settings avoids locking the memory
access during the data transfer from one interface to the SRAM buffer.
The pass-through mode can only be enabled when both interfaces are ON and only via
the I²C interface via the bit PTHRU_ON_OFF located in the session registers NC_REG
(see Section 8.3.11). In case one interface powers off, the pass-through mode is disabled
automatically.
11.3.1 SRAM buffer mapping
In Pass-through mode, the SRAM is mirrored to pages F0h to FFh sector 0h for the NTAG
I²C 1k - see Figure 29 - or sector 1h for the NTAG I²C 2k - see Figure 30 - outside the User
memory.
The last page/block of the SRAM buffer (page 16) is used as the terminator page. Once
the terminator page/block in the respective interfaces is read/written, the control would be
transferred to other interface (RF/I²C) - see Section 11.3.2 and Section 11.3.3 for more
details.
Accordingly, the application can align on the Reader & Host side to transfer 16/32/48/64
bytes of data in one pass through step by only using the last blocks/page of the SRAM
buffer.
When using FAST_READ to read the SRAM buffer from RF, the EndAddress input of the
FAST_READ command has to be always set to FFh.NT3H1101/NT3H1201 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 3.1 — 9 October 2014
265431 50 of 62
NXP Semiconductors NT3H1101/NT3H1201
NFC Forum type 2 Tag compliant IC with I2C interface
Fig 29. Illustration of the SRAM memory addressing via the RF interface in Pass-through
mode for the NTAG I²C 1k
aaa-012815
Sector adr.
Hex. Dec. Hex. 0 1 2 3 conditions
Page address
0h 0 0h
1h ......
1 1h
2 2h
3 3h
4 4h
15 0Fh
225 E1h
226 E2h
227 E3h
228 E4h
229 E5h
230 E6h
231 E7h
232 E8h
233 E9h
234 EAh
...
240 F0h
255 FFh
......
......
......
...
Serial number
Invalid access - returns NAK
Serial number Internal data
00h
Internal data Lock bytes
Byte number within a page
READ
Capability Container (CC) READ
READ
READ/R&W
n.a.
Dynamic lock bytes R&W/R
2h ...... Invalid access - returns NAK n.a.
3h 0 0h
Invalid access - returns NAK n.a.
SRAM memory (16 pages) in Pass Through mode only READ&WRITE
Invalid access - returns NAK n.a.
User memory READ&WRITE
249 F9H
248 F8H
Session registers See section 8.5.9
Invalid access - returns NAK n.a.
Configuration See section 8.5.9
255 FFH
...... Invalid access - returns NAK n.a.
AccessNT3H1101/NT3H1201 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 3.1 — 9 October 2014
265431 51 of 62
NXP Semiconductors NT3H1101/NT3H1201
NFC Forum type 2 Tag compliant IC with I2C interface
11.3.2 RF to I²C Data transfer
If the RF interface is enabled (RF_LOCKED=1) and data is written to the terminator
block/page of the SRAM via the RF interface, at the end of the WRITE command, bit
SRAM_I2C_READY is set to 1 and bit RF_LOCKED is set to 0 automatically, and the
NTAG I²C is locked to the I²C interface.
Fig 30. Illustration of the SRAM memory addressing via the RF interface in Pass-through
mode for the NTAG I²C 2k
aaa-012816
Sector adr.
Hex. Dec. Hex. 0 1 2 3 conditions
Page address
0h 0 0h
2h ......
1 1h
1h
2 2h
3 3h
4 4h
225 FFh
226 E2h
227 E3h
228 E4h
223 DFh
224 E0h
225 E1h
229 E5h
230 E6h
231 E7h
232 E8h
233 E9h
234 EAh
235 EBh
236 ECh
237 EDh
238 EEh
239 EFh
240 F0h
255 FFh
......
......
......
Serial number
Invalid access - returns NAK
Serial number Internal data
00h
Internal data Lock bytes
Byte number within a page
READ
Capability Container (CC) READ
READ
READ/R&W
n.a.
Dynamic lock bytes R&W/R
3h 0 0h
Invalid access - returns NAK n.a.
SRAM memory (16 pages) in Pass Through mode only READ&WRITE.
Invalid access - returns NAK n.a.
Invalid access - returns NAK n.a.
User memory READ&WRITE
249 F9H
248 F8H
Session registers See section 8.5.9
Configuration See section 8.5.9
255 FFH
...... Invalid access - returns NAK n.a.
Access
0 0h
1 1h
......
......NT3H1101/NT3H1201 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 3.1 — 9 October 2014
265431 52 of 62
NXP Semiconductors NT3H1101/NT3H1201
NFC Forum type 2 Tag compliant IC with I2C interface
To signal to the host that data is ready to be read following mechanisms are in place:
• The host polls/reads bit SRAM_I2C_READY from NS_REG (see Table 10) to know if
data is ready in SRAM
• A trigger on the "FD" pin indicates to the host that data is ready to be read from
SRAM. This feature can be enabled by programming bits 5:2 (FD_OFF, FD_ON) of
the NC_REG appropriately (see Table 9)
This is illustrated in the Figure 31.
If the tag is addressed with the correct I²C slave address, the I2C_LOCKED bit is
automatically set to 1 (according to the interface arbitration). After a READ from the
terminator page of the SRAM, bit SRAM_I2C_READY and bit I2C_LOCKED are
automatically reset to 0, and the tag returns to the arbitration idle mode where, for
example, further data from the RF interface can be transferred.xxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxx x x x xxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxx xx xx xxxxx
xxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxx xxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxx x x
xxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxx
xxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxx xxx NT3H1101/NT3H1201 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
COMPANY PUBLIC
Product data sheet Rev. 3.1 — 9 October 2014
265431 53 of 62
NXP Semiconductors NT3H1101/NT3H1201
NFC Forum type 2 Tag compliant IC with I2C interface Fig 31. Illustration of the Field detection feature in combination with the Pass Through mode for data transfer from RF to I²C aaa-012807
I
2C
RF
RF writing data to the
SRAM buffer
RF writing data
to the SRAM
buffer
NDEF_DATA_READ 0b
I2C_LOCKED 0b 0b
RF_LOCKED 0b 1b
SRAM_I2C_READY 0b 0b
SRAM_RF_READY 0b
EEPROM_WR_ERR 0b
EEPROM_WR_BUSY 0b
RF_FIELD_PRESENT 0b 1b 0b
I2C_RST_ON_OFF
PTHRU_ON_OFF
SRAM_MIRROR_ON_OFF
PTHRU_DIR
ON
OFF
HIGH
LOW
NC_REGFD_ON FD_OFF
Last 4 bytes of
SRAM written by RF
Last 4 bytes of
SRAM written by
RF
RF field
switches ON
RF field
FD pin
EVENT
RF field switches
OFF
1b
0b
0b
0b
REGISTERS
NS_REG
0b
1b
1b
0b
1b
Last 16 bytes of
SRAM read by I2C
Last 16 bytes of SRAM
read by I2C
0b
0b 1b 0b
1b 0b
1b
0b
0b
0b
0b
0b 1b 0b 1b
0b
0b
1b
1b
0b
0b
0b
0b
1b
0b
0b
0b
0b
0b
0b
0b
0b
0b
0b
1b
0b
1b
Set data direction from
RF to I2C + set FD for Switch ON Pass through modeNT3H1101/NT3H1201 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 3.1 — 9 October 2014
265431 54 of 62
NXP Semiconductors NT3H1101/NT3H1201
NFC Forum type 2 Tag compliant IC with I2C interface
11.3.3 I²C to RF Data transfer
If the I²C interface is enabled (I2C_LOCKED is 1) and data is written to the terminator
page of the SRAM via the I²C interface, at the end of the WRITE command, bit
SRAM_RF_READY is set to 1 and bit I2C_LOCKED is automatically reset to 0 to set the
tag in the arbitration idle state.
The RF_LOCKED bit is then automatically set to 1 (according to the interface arbitration).
After a READ or FAST_READ command involving the terminator block/page of the
SRAM, bit SRAM_RF_READY and bit RF_LOCKED are automatically reset to 0 allowing
the I²C interface to further write data into the SRAM buffer.
To signal to the host that further data is ready to be written, the following mechanisms are
in place:
• The RF interface polls/reads the bit SRAM_RF_READY from NS_REG (see Table 10)
to know if new data has been written by the I²C interface in the SRAM
• A trigger on the "FD" pin indicates to the host that data has been read from SRAM by
the RF interface. This feature can be enabled by programming bits 5:2 (FD_OFF,
FD_ON) of the NC_REG appropriately (see Table 9)
The above mechanism is illustrated in the Figure 32.xxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxx x x x xxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxx xx xx xxxxx
xxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxx xxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxx x x
xxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxx
xxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxx xxx NT3H1101/NT3H1201 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
COMPANY PUBLIC
Product data sheet Rev. 3.1 — 9 October 2014
265431 55 of 62
NXP Semiconductors NT3H1101/NT3H1201
NFC Forum type 2 Tag compliant IC with I2C interface Fig 32. Illustration of the Field detection signal feature in combination with Pass-through mode for data transfer from I²C to RF aaa-012806
I
2C
Switch ON Pass
through mode
I
2C writing data to the
SRAM buffer
I
2C writing
data to the
SRAM buffer
RF
NDEF_DATA_READ 0b 0b 0b
I2C_LOCKED 0b 1b 0b 0b
RF_LOCKED 0b 0b 0b 0b
SRAM_I2C_READY 0b 0b 0b
SRAM_RF_READY 0b 0b 0b 0b
EEPROM_WR_ERR 0b 0b 0b
EEPROM_WR_BUSY 0b 0b 0b
RF_FIELD_PRESENT 0b 1b 0b
I2C_RST_ON_OFF 0b 0b 0b
PTHRU_ON_OFF 0b 0b 0b
0b 0b 0b
0b 0b 0b
0b 0b 0b
0b 0b 0b
SRAM_MIRROR_ON_OFF 0b 0b 0b
PTHRU_DIR 1b 0b 0b
RF field switches
OFF
REGISTERS
16 bytes of SRAM
read by RF
16 bytes of SRAM
written by I2C
16 bytes of SRAM
read by RF
LOW
HIGH
ON
OFF
EVENT
FD pin
RF field
NS_REG NC_REGFD_ON FD_OFF
RF field
switches ON
16 bytes of SRAM
written by I2C
0b
0b
0b
0b
0b 0b
1b
1b
0b
0b
1b 1b
1b
1b
0b
0b
0b
1b
0b
1b
1b
1b
1b
Set data direction from
I
2C to RF + set FD for
1b
0b
1b
0b
0b
0b
0b
0b
0bNT3H1101/NT3H1201 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 3.1 — 9 October 2014
265431 56 of 62
NXP Semiconductors NT3H1101/NT3H1201
NFC Forum type 2 Tag compliant IC with I2C interface
12. Limiting values
Exceeding the limits of one or more values in reference may cause permanent damage to
the device. Exposure to limiting values for extended periods may affect device reliability.
[1] ANSI/ESDA/JEDEC JS-001; Human body model: C = 100 pF, R = 1.5 k.
13. Characteristics
13.1 Electrical characteristics
[1] Stresses above one or more of the limiting values may cause permanent damage to the device.
[2] These are stress ratings only. Operation of the device at these or any other conditions above those given in the Characteristics section
of the specification is not implied.
[3] Exposure to limiting values for extended periods may affect device reliability.
Table 27. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
Tstg storage temperature 55 +125 C
Tamb ambient temperature 40 +85 C
VESD electrostatic discharge voltage 2 - kV
VFD Voltage on the FD pin - 3.6 V
VSDA Voltage on the SDA line - 3.6 V
VSCL Voltage on the SCL line - 3.6 V
Table 28. Characteristics
In accordance with the Absolute Maximum Rating System (IEC 60134).[1][2][3]
Symbol Parameter Conditions Min Typ Max Unit
Ci input capacitance LA - LB 44 50 56 pF
fi input frequency - 13.56 - MHz
Energy harvesting characteristics
Vout voltage generated at the Vout
pin
- - 3.2 V
I²C interface characteristics
VCC supply voltage I²C on VCC input 1.8 3.6 V
IDD supply current - 155 - A
EEPROM characteristics
tret retention time Tamb = 22 C 20 - - year
Nendu(W) write endurance Tamb = 22 C 200000 - - cycleNT3H1101/NT3H1201 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 3.1 — 9 October 2014
265431 57 of 62
NXP Semiconductors NT3H1101/NT3H1201
NFC Forum type 2 Tag compliant IC with I2C interface
14. Package outline
Fig 33. Package outline SOT902-3 (XQFN8)
Outline References
version
European
projection Issue date
IEC JEDEC JEITA
SOT902-3 - - - - - - MO-255
sot902-3_po
11-08-16
11-08-18
Unit
mm
max
nom
min
0.5 0.05
0.00
1.65
1.60
1.55
1.65
1.60
1.55
0.6 0.5 0.1 0.05
A
Dimensions
Note
1. Plastic or metal protrusions of 0.075 mm maximum per side are not included.
XQFN8: plastic, extremely thin quad flat package; no leads;
8 terminals; body 1.6 x 1.6 x 0.5 mm SOT902-3
A1 b
0.25
0.20
0.15
DE ee1 L
0.45
0.40
0.35
v w
0.05
y y1
0.05
0 1 2 mm
scale
terminal 1
index area
D B A
E
X
C
y1 C y
terminal 1
index area
3
L
e1
e
v AC B
w C
2
1
5
6
7
metal area
not for soldering
8
4
e1
e
b
A1
A
detail XNT3H1101/NT3H1201 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 3.1 — 9 October 2014
265431 58 of 62
NXP Semiconductors NT3H1101/NT3H1201
NFC Forum type 2 Tag compliant IC with I2C interface
15. Abbreviations
16. References
[1] NFC Forum Tag 2 Type Operation, Technical Specification - NFC Forum,
31.05.2011, Version 1.1
[2] ISO/IEC 14443 - International Organization for Standardization
[3] I2C-bus specification and user manual (NXP standard UM10204.pdf / Rev. 03 - 19
June 2007)
[4] NFC Forum Activity, Technical Specification V1.1
Table 29. Pin description
Pin no. Symbol Description
1 LA Antenna connection LA
2 VSS GND
3 SCL Serial Clock I2C
4 FD Field detection
5 SDA Serial data I2C
6 VCC VCC in connection (external power supply)
7 Vout Voltage out (energy harvesting)
8 LB Antenna connection LB
Table 30. Abbreviations
Acronym Description
POR Power On ResetNT3H1101/NT3H1201 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 3.1 — 9 October 2014
265431 59 of 62
NXP Semiconductors NT3H1101/NT3H1201
NFC Forum type 2 Tag compliant IC with I2C interface
17. Revision history
Table 31. Revision history
Document ID Release date Data sheet status Change notice Supersedes
NT3H1101_1201 v. 3.1 20141009 Product data sheet - NT3H1101_1201 v. 3.0
Modifications: • Section 8.6 “Energy harvesting”: updated
• Section 10.5 “GET_VERSION”: updated
• Figure 31 and Figure 32: updated
• Section 12 “Limiting values” and Section 13 “Characteristics”: remark removed
NT3H1101_1201 v. 3.0 20140806 Product data sheet - NT3H1101_1201 v. 2.3
Modifications: • Section 8.6 “Energy harvesting” updated
• Section 16 “References”: updated
• Data sheet status changed to “Product data sheet”
NT3H1101_1201 v. 2.3 20140708 Objective data sheet - NT3H1201_1101 v. 2.2
Modifications: • Figures updated
• General update
NT3H1101_1201 v. 2.2 20140306 Objective data sheet - NT3H1201_1101 v. 2.1
Modifications: • General updates
NT3H1101_1201 v. 2.1 20131218 Objective data sheet - NT3H1201_1101 v. 2.0
Modifications: • Section 4 “Ordering information”: type number corrected
NT3H1101_1201 v. 2.0 20131212 Objective data sheet NT3H1201 v. 1.4
Modifications: • Additional description for the Field detection functionality for Pass-through mode
• General update
NT3H1201 v. 1.4 20130802 Objective data sheet - NT3H1201 v. 1.3
Modifications: • Update for 1k memory version and RF commands
NT3H1201 v. 1.3 20130613 Objective data sheet -
Modifications: • Pinning package update NT3H1201 v. 1.0
NT3H1201 v. 1.0 20130425 Objective data sheet - -NT3H1101/NT3H1201 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 3.1 — 9 October 2014
265431 60 of 62
NXP Semiconductors NT3H1101/NT3H1201
NFC Forum type 2 Tag compliant IC with I2C interface
18. Legal information
18.1 Data sheet status
[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
18.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to offer functions and qualities beyond those described in the
Product data sheet.
18.3 Disclaimers
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information. NXP Semiconductors takes no
responsibility for the content in this document if provided by an information
source outside of NXP Semiconductors.
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors and its suppliers accept no liability for
inclusion and/or use of NXP Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at the customer’s own
risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and operation of their applications
and products using NXP Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or customer product
design. It is customer’s sole responsibility to determine whether the NXP
Semiconductors product is suitable and fit for the customer’s applications and
products planned, as well as for the planned application and use of
customer’s third party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks associated with their
applications and products.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
third party customer(s). Customer is responsible for doing all necessary
testing for the customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications and
the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Document status[1][2] Product status[3] Definition
Objective [short] data sheet Development This document contains data from the objective specification for product development.
Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.
Product [short] data sheet Production This document contains the product specification. NT3H1101/NT3H1201 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 3.1 — 9 October 2014
265431 61 of 62
NXP Semiconductors NT3H1101/NT3H1201
NFC Forum type 2 Tag compliant IC with I2C interface
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Non-automotive qualified products — Unless this data sheet expressly
states that this specific NXP Semiconductors product is automotive qualified,
the product is not suitable for automotive use. It is neither qualified nor tested
in accordance with automotive testing or application requirements. NXP
Semiconductors accepts no liability for inclusion and/or use of
non-automotive qualified products in automotive equipment or applications.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards, customer
(a) shall use the product without NXP Semiconductors’ warranty of the
product for such automotive applications, use and specifications, and (b)
whenever customer uses the product for automotive applications beyond
NXP Semiconductors’ specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies NXP Semiconductors for any
liability, damages or failed product claims resulting from customer design and
use of the product for automotive applications beyond NXP Semiconductors’
standard warranty and NXP Semiconductors’ product specifications.
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
18.4 Licenses
18.5 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
MIFARE — is a trademark of NXP Semiconductors N.V.
I
2C-bus — logo is a trademark of NXP Semiconductors N.V.
19. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Purchase of NXP ICs with NFC technology
Purchase of an NXP Semiconductors IC that complies with one of the Near
Field Communication (NFC) standards ISO/IEC 18092 and ISO/IEC 21481
does not convey an implied license under any patent right infringed by
implementation of any of those standards.NXP Semiconductors NT3H1101/NT3H1201
NFC Forum type 2 Tag compliant IC with I2C interface
© NXP Semiconductors N.V. 2014. All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 9 October 2014
265431
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
20. Contents
1 General description . . . . . . . . . . . . . . . . . . . . . . 1
2 Features and benefits . . . . . . . . . . . . . . . . . . . . 1
2.1 Key features . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
2.2 RF interface . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
2.3 Memory. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
2.4 I2C interface . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
2.5 Security. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2.6 Key benefits . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
4 Ordering information. . . . . . . . . . . . . . . . . . . . . 3
5 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
6 Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . 4
7 Pinning information. . . . . . . . . . . . . . . . . . . . . . 5
7.1 Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
7.2 Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 5
8 Functional description . . . . . . . . . . . . . . . . . . . 6
8.1 Block description . . . . . . . . . . . . . . . . . . . . . . . 6
8.2 RF interface . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
8.2.1 Data integrity. . . . . . . . . . . . . . . . . . . . . . . . . . . 6
8.2.2 RF communication principle . . . . . . . . . . . . . . . 7
8.2.2.1 IDLE state. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
8.2.2.2 READY 1 state . . . . . . . . . . . . . . . . . . . . . . . . . 8
8.2.2.3 READY 2 state . . . . . . . . . . . . . . . . . . . . . . . . . 8
8.2.2.4 ACTIVE state . . . . . . . . . . . . . . . . . . . . . . . . . . 8
8.2.2.5 HALT state . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
8.3 Memory organization . . . . . . . . . . . . . . . . . . . . 8
8.3.1 Memory map from RF interface . . . . . . . . . . . . 9
8.3.2 Memory map from I²C interface . . . . . . . . . . . 10
8.3.3 EEPROM . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
8.3.4 SRAM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
8.3.5 UID/serial number. . . . . . . . . . . . . . . . . . . . . . 13
8.3.6 Static lock bytes . . . . . . . . . . . . . . . . . . . . . . . 13
8.3.7 Dynamic Lock Bytes . . . . . . . . . . . . . . . . . . . . 14
8.3.8 Capability Container (CC bytes) . . . . . . . . . . . 16
8.3.9 User Memory pages . . . . . . . . . . . . . . . . . . . . 17
8.3.10 Memory content at delivery . . . . . . . . . . . . . . 18
8.3.11 NTAG I2C configuration and session registers 18
8.4 Configurable Field Detection Pin . . . . . . . . . . 24
8.5 Watchdog timer. . . . . . . . . . . . . . . . . . . . . . . . 28
8.6 Energy harvesting. . . . . . . . . . . . . . . . . . . . . . 29
9 I²C commands . . . . . . . . . . . . . . . . . . . . . . . . . 30
9.1 Start condition. . . . . . . . . . . . . . . . . . . . . . . . . 30
9.2 Stop condition . . . . . . . . . . . . . . . . . . . . . . . . . 30
9.3 Soft reset feature . . . . . . . . . . . . . . . . . . . . . . 31
9.4 Acknowledge bit (ACK). . . . . . . . . . . . . . . . . . 31
9.5 Data input . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31
9.6 Addressing . . . . . . . . . . . . . . . . . . . . . . . . . . . 31
9.7 READ and WRITE Operation. . . . . . . . . . . . . 32
9.8 WRITE and READ register operation . . . . . . 34
10 RF Command . . . . . . . . . . . . . . . . . . . . . . . . . 36
10.1 NTAG I2C command overview . . . . . . . . . . . . 36
10.2 Timing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36
10.3 NTAG ACK and NAK . . . . . . . . . . . . . . . . . . 37
10.4 ATQA and SAK responses. . . . . . . . . . . . . . . 37
10.5 GET_VERSION . . . . . . . . . . . . . . . . . . . . . . . 38
10.6 READ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39
10.7 FAST_READ . . . . . . . . . . . . . . . . . . . . . . . . . 40
10.8 WRITE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42
10.9 SECTOR SELECT . . . . . . . . . . . . . . . . . . . . . 43
11 Communication and arbitration between
RF and I²C interface . . . . . . . . . . . . . . . . . . . . 45
11.1 Non Pass-through Mode . . . . . . . . . . . . . . . . 45
11.1.1 I²C interface access . . . . . . . . . . . . . . . . . . . . 45
11.1.2 RF interface access . . . . . . . . . . . . . . . . . . . . 45
11.2 SRAM buffer mapping with Memory Mirror
enabled . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 46
11.3 Pass-through mode . . . . . . . . . . . . . . . . . . . . 48
11.3.1 SRAM buffer mapping . . . . . . . . . . . . . . . . . . 49
11.3.2 RF to I²C Data transfer . . . . . . . . . . . . . . . . . 51
11.3.3 I²C to RF Data transfer . . . . . . . . . . . . . . . . . 54
12 Limiting values . . . . . . . . . . . . . . . . . . . . . . . . 56
13 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . 56
13.1 Electrical characteristics . . . . . . . . . . . . . . . . 56
14 Package outline. . . . . . . . . . . . . . . . . . . . . . . . 57
15 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . 58
16 References. . . . . . . . . . . . . . . . . . . . . . . . . . . . 58
17 Revision history . . . . . . . . . . . . . . . . . . . . . . . 59
18 Legal information . . . . . . . . . . . . . . . . . . . . . . 60
18.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 60
18.2 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . 60
18.3 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . 60
18.4 Licenses. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 61
18.5 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . 61
19 Contact information . . . . . . . . . . . . . . . . . . . . 61
20 Contents. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62
1. General description
The LPC1769/68/67/66/65/64/63 are ARM Cortex-M3 based microcontrollers for
embedded applications featuring a high level of integration and low power consumption.
The ARM Cortex-M3 is a next generation core that offers system enhancements such as
enhanced debug features and a higher level of support block integration.
The LPC1768/67/66/65/64/63 operate at CPU frequencies of up to 100 MHz. The
LPC1769 operates at CPU frequencies of up to 120 MHz. The ARM Cortex-M3 CPU
incorporates a 3-stage pipeline and uses a Harvard architecture with separate local
instruction and data buses as well as a third bus for peripherals. The ARM Cortex-M3
CPU also includes an internal prefetch unit that supports speculative branching.
The peripheral complement of the LPC1769/68/67/66/65/64/63 includes up to 512 kB of
flash memory, up to 64 kB of data memory, Ethernet MAC, USB Device/Host/OTG
interface, 8-channel general purpose DMA controller, 4 UARTs, 2 CAN channels, 2 SSP
controllers, SPI interface, 3 I2C-bus interfaces, 2-input plus 2-output I2S-bus interface,
8-channel 12-bit ADC, 10-bit DAC, motor control PWM, Quadrature Encoder interface,
four general purpose timers, 6-output general purpose PWM, ultra-low power Real-Time
Clock (RTC) with separate battery supply, and up to 70 general purpose I/O pins.
The LPC1769/68/67/66/65/64/63 are pin-compatible to the 100-pin LPC236x
ARM7-based microcontroller series.
For additional documentation, see Section 19 “References”.
2. Features and benefits
ARM Cortex-M3 processor, running at frequencies of up to 100 MHz
(LPC1768/67/66/65/64/63) or of up to 120 MHz (LPC1769). A Memory Protection Unit
(MPU) supporting eight regions is included.
ARM Cortex-M3 built-in Nested Vectored Interrupt Controller (NVIC).
Up to 512 kB on-chip flash programming memory. Enhanced flash memory accelerator
enables high-speed 120 MHz operation with zero wait states.
In-System Programming (ISP) and In-Application Programming (IAP) via on-chip
bootloader software.
On-chip SRAM includes:
32/16 kB of SRAM on the CPU with local code/data bus for high-performance CPU
access.
LPC1769/68/67/66/65/64/63
32-bit ARM Cortex-M3 microcontroller; up to 512 kB flash and
64 kB SRAM with Ethernet, USB 2.0 Host/Device/OTG, CAN
Rev. 9.5 — 24 June 2014 Product data sheetLPC1769_68_67_66_65_64_63 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet Rev. 9.5 — 24 June 2014 2 of 89
NXP Semiconductors LPC1769/68/67/66/65/64/63
32-bit ARM Cortex-M3 microcontroller
Two/one 16 kB SRAM blocks with separate access paths for higher throughput.
These SRAM blocks may be used for Ethernet, USB, and DMA memory, as well as
for general purpose CPU instruction and data storage.
Eight channel General Purpose DMA controller (GPDMA) on the AHB multilayer
matrix that can be used with SSP, I2S-bus, UART, Analog-to-Digital and
Digital-to-Analog converter peripherals, timer match signals, and for
memory-to-memory transfers.
Multilayer AHB matrix interconnect provides a separate bus for each AHB master.
AHB masters include the CPU, General Purpose DMA controller, Ethernet MAC, and
the USB interface. This interconnect provides communication with no arbitration
delays.
Split APB bus allows high throughput with few stalls between the CPU and DMA.
Serial interfaces:
Ethernet MAC with RMII interface and dedicated DMA controller. (Not available on
all parts, see Table 2.)
USB 2.0 full-speed device/Host/OTG controller with dedicated DMA controller and
on-chip PHY for device, Host, and OTG functions. (Not available on all parts, see
Table 2.)
Four UARTs with fractional baud rate generation, internal FIFO, and DMA support.
One UART has modem control I/O and RS-485/EIA-485 support, and one UART
has IrDA support.
CAN 2.0B controller with two channels. (Not available on all parts, see Table 2.)
SPI controller with synchronous, serial, full duplex communication and
programmable data length.
Two SSP controllers with FIFO and multi-protocol capabilities. The SSP interfaces
can be used with the GPDMA controller.
Three enhanced I2C bus interfaces, one with an open-drain output supporting full
I
2C specification and Fast mode plus with data rates of 1 Mbit/s, two with standard
port pins. Enhancements include multiple address recognition and monitor mode.
I
2S (Inter-IC Sound) interface for digital audio input or output, with fractional rate
control. The I2S-bus interface can be used with the GPDMA. The I2S-bus interface
supports 3-wire and 4-wire data transmit and receive as well as master clock
input/output. (Not available on all parts, see Table 2.)
Other peripherals:
70 (100 pin package) General Purpose I/O (GPIO) pins with configurable
pull-up/down resistors. All GPIOs support a new, configurable open-drain operating
mode. The GPIO block is accessed through the AHB multilayer bus for fast access
and located in memory such that it supports Cortex-M3 bit banding and use by the
General Purpose DMA Controller.
12-bit Analog-to-Digital Converter (ADC) with input multiplexing among eight pins,
conversion rates up to 200 kHz, and multiple result registers. The 12-bit ADC can
be used with the GPDMA controller.
10-bit Digital-to-Analog Converter (DAC) with dedicated conversion timer and DMA
support. (Not available on all parts, see Table 2)
Four general purpose timers/counters, with a total of eight capture inputs and ten
compare outputs. Each timer block has an external count input. Specific timer
events can be selected to generate DMA requests.
One motor control PWM with support for three-phase motor control.LPC1769_68_67_66_65_64_63 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet Rev. 9.5 — 24 June 2014 3 of 89
NXP Semiconductors LPC1769/68/67/66/65/64/63
32-bit ARM Cortex-M3 microcontroller
Quadrature encoder interface that can monitor one external quadrature encoder.
One standard PWM/timer block with external count input.
RTC with a separate power domain and dedicated RTC oscillator. The RTC block
includes 20 bytes of battery-powered backup registers.
WatchDog Timer (WDT). The WDT can be clocked from the internal RC oscillator,
the RTC oscillator, or the APB clock.
ARM Cortex-M3 system tick timer, including an external clock input option.
Repetitive interrupt timer provides programmable and repeating timed interrupts.
Each peripheral has its own clock divider for further power savings.
Standard JTAG test/debug interface for compatibility with existing tools. Serial Wire
Debug and Serial Wire Trace Port options.
Emulation trace module enables non-intrusive, high-speed real-time tracing of
instruction execution.
Integrated PMU (Power Management Unit) automatically adjusts internal regulators to
minimize power consumption during Sleep, Deep sleep, Power-down, and Deep
power-down modes.
Four reduced power modes: Sleep, Deep-sleep, Power-down, and Deep power-down.
Single 3.3 V power supply (2.4 V to 3.6 V).
Four external interrupt inputs configurable as edge/level sensitive. All pins on Port 0
and Port 2 can be used as edge sensitive interrupt sources.
Non-maskable Interrupt (NMI) input.
Clock output function that can reflect the main oscillator clock, IRC clock, RTC clock,
CPU clock, and the USB clock.
The Wake-up Interrupt Controller (WIC) allows the CPU to automatically wake up from
any priority interrupt that can occur while the clocks are stopped in deep sleep,
Power-down, and Deep power-down modes.
Processor wake-up from Power-down mode via any interrupt able to operate during
Power-down mode (includes external interrupts, RTC interrupt, USB activity, Ethernet
wake-up interrupt, CAN bus activity, Port 0/2 pin interrupt, and NMI).
Brownout detect with separate threshold for interrupt and forced reset.
Power-On Reset (POR).
Crystal oscillator with an operating range of 1 MHz to 25 MHz.
4 MHz internal RC oscillator trimmed to 1 % accuracy that can optionally be used as a
system clock.
PLL allows CPU operation up to the maximum CPU rate without the need for a
high-frequency crystal. May be run from the main oscillator, the internal RC oscillator,
or the RTC oscillator.
USB PLL for added flexibility.
Code Read Protection (CRP) with different security levels.
Unique device serial number for identification purposes.
Available as LQFP100 (14 mm 14 mm 1.4 mm), TFBGA1001 (9 mm 9 mm 0.7
mm), and WLCSP100 (5.074 5.074 0.6 mm) package.
1. LPC1768/65 only.LPC1769_68_67_66_65_64_63 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet Rev. 9.5 — 24 June 2014 4 of 89
NXP Semiconductors LPC1769/68/67/66/65/64/63
32-bit ARM Cortex-M3 microcontroller
3. Applications
4. Ordering information
4.1 Ordering options
eMetering Alarm systems
Lighting White goods
Industrial networking Motor control
Table 1. Ordering information
Type number Package
Name Description Version
LPC1769FBD100 LQFP100 plastic low profile quad flat package; 100 leads; body 14 14 1.4 mm SOT407-1
LPC1768FBD100 LQFP100 plastic low profile quad flat package; 100 leads; body 14 14 1.4 mm SOT407-1
LPC1768FET100 TFBGA100 plastic thin fine-pitch ball grid array package; 100 balls; body 9 9 0.7 mm SOT926-1
LPC1768UK WLCSP100 wafer level chip-scale package; 100 balls; 5.074 5.074 0.6 mm -
LPC1767FBD100 LQFP100 plastic low profile quad flat package; 100 leads; body 14 14 1.4 mm SOT407-1
LPC1766FBD100 LQFP100 plastic low profile quad flat package; 100 leads; body 14 14 1.4 mm SOT407-1
LPC1765FBD100 LQFP100 plastic low profile quad flat package; 100 leads; body 14 14 1.4 mm SOT407-1
LPC1765FET100 TFBGA100 plastic thin fine-pitch ball grid array package; 100 balls; body 9 9 0.7 mm SOT926-1
LPC1764FBD100 LQFP100 plastic low profile quad flat package; 100 leads; body 14 14 1.4 mm SOT407-1
LPC1763FBD100 LQFP100 plastic low profile quad flat package; 100 leads; body 14 14 1.4 mm SOT407-1
Table 2. Ordering options
Type number Flash SRAM in kB Ethernet USB CAN I
2S DAC Maximum
CPU
operating
frequency
CPU AHB
SRAM0
AHB
SRAM1
Total
LPC1769FBD100 512 kB 32 16 16 64 yes Device/Host/OTG 2 yes yes 120 MHz
LPC1768FBD100 512 kB 32 16 16 64 yes Device/Host/OTG 2 yes yes 100 MHz
LPC1768FET100 512 kB 32 16 16 64 yes Device/Host/OTG 2 yes yes 100 MHz
LPC1768UK 512 kB 32 16 16 64 yes Device/Host/OTG 2 yes yes 100 MHz
LPC1767FBD100 512 kB 32 16 16 64 yes no no yes yes 100 MHz
LPC1766FBD100 256 kB 32 16 16 64 yes Device/Host/OTG 2 yes yes 100 MHz
LPC1765FBD100 256 kB 32 16 16 64 no Device/Host/OTG 2 yes yes 100 MHz
LPC1765FET100 256 kB 32 16 16 64 no Device/Host/OTG 2 yes yes 100 MHz
LPC1764FBD100 128 kB 16 16 - 32 yes Device only 2 no no 100 MHz
LPC1763FBD100 256 kB 32 16 16 64 no no no yes yes 100 MHzLPC1769_68_67_66_65_64_63 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet Rev. 9.5 — 24 June 2014 5 of 89
NXP Semiconductors LPC1769/68/67/66/65/64/63
32-bit ARM Cortex-M3 microcontroller
5. Marking
The LPC176x devices typically have the following top-side marking:
LPC176xxxx
xxxxxxx
xxYYWWR[x]
The last/second to last letter in the third line (field ‘R’) will identify the device revision. This
data sheet covers the following revisions of the LPC176x:
Field ‘YY’ states the year the device was manufactured. Field ‘WW’ states the week the
device was manufactured during that year.
Table 3. Device revision table
Revision identifier (R) Revision description
‘-’ Initial device revision
‘A’ Second device revision
‘B’ Third device revisionLPC1769_68_67_66_65_64_63 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet Rev. 9.5 — 24 June 2014 6 of 89
NXP Semiconductors LPC1769/68/67/66/65/64/63
32-bit ARM Cortex-M3 microcontroller
6. Block diagram
(1) Not available on all parts. See Table 2.
Fig 1. Block diagram
SRAM 32/64 kB
ARM
CORTEX-M3
TEST/DEBUG
INTERFACE
EMULATION
TRACE MODULE
FLASH
ACCELERATOR
FLASH
512/256/128 kB
DMA
CONTROLLER
ETHERNET
CONTROLLER
WITH DMA(1)
USB HOST/
DEVICE/OTG
CONTROLLER
WITH DMA(1)
I-code
bus
D-code
bus
system
bus
AHB TO
APB
BRIDGE 0
HIGH-SPEED
GPIO AHB TO
APB
BRIDGE 1
CLOCK
GENERATION,
POWER CONTROL,
SYSTEM
FUNCTIONS
XTAL1
XTAL2
RESET
clocks and
controls
JTAG
interface
debug
port
USB PHY
SSP0
UART2/3
I2S(1)
I2C2
RI TIMER
TIMER2/3
EXTERNAL INTERRUPTS
SYSTEM CONTROL
MOTOR CONTROL PWM
QUADRATURE ENCODER
SSP1
UART0/1
CAN1/2(1)
I2C0/1
SPI0
TIMER 0/1
WDT
PWM1
12-bit ADC
PIN CONNECT
GPIO INTERRUPT CONTROL
RTC
BACKUP REGISTERS
32 kHz
OSCILLATOR
APB slave group 1 APB slave group 0
DAC(1)
RTC POWER DOMAIN
LPC1769/68/67/
66/65/64/63
master master master
002aad944
slave slave slave slave
slave
ROM
slave
MULTILAYER AHB MATRIX
P0 to
P4
SDA2
SCL2
SCK0
SSEL0
MISO0
MOSI0
SCK1
SSEL1
MISO1
MOSI1
RXD2/3
TXD2/3
PHA, PHB
INDEX
EINT[3:0]
AOUT
MCOA[2:0]
MCOB[2:0]
MCI[2:0]
MCABORT
4 × MAT2
2 × MAT3
2 × CAP2
2 × CAP3
3 × I2SRX
3 × I2STX
TX_MCLK
RX_MCLK
RTCX1
RTCX2
VBAT
PWM1[7:0]
2 × MAT0/1
2 × CAP0/1
RD1/2
TD1/2
SDA0/1
SCL0/1
AD0[7:0]
SCK/SSEL
MOSI/MISO
8 × UART1
RXD0/TXD0
P0, P2
PCAP1[1:0]
RMII pins USB pins
CLKOUT
MPU
= connected to DMALPC1769_68_67_66_65_64_63 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet Rev. 9.5 — 24 June 2014 7 of 89
NXP Semiconductors LPC1769/68/67/66/65/64/63
32-bit ARM Cortex-M3 microcontroller
7. Pinning information
7.1 Pinning
Fig 2. Pin configuration LQFP100 package
Fig 3. Pin configuration TFBGA100 package
LPC176xFBD100
50
1
25
75
51
26
76
100
002aad945
002aaf723
LPC1768/65FET100
Transparent top view
J
G
K
H
F
E
D
C
B
A
13579 2 4 6 8 10
ball A1
index areaLPC1769_68_67_66_65_64_63 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet Rev. 9.5 — 24 June 2014 8 of 89
NXP Semiconductors LPC1769/68/67/66/65/64/63
32-bit ARM Cortex-M3 microcontroller
Fig 4. Pin configuration WLCSP100 package
Transparent top view
1
A
B
C
D
E
F
G
H
J
K
2 3 4 5 6 7 8 9 10
LPC1768UK
bump A1
index area
aaa-009522
Table 4. Pin allocation table TFBGA100
Pin Symbol Pin Symbol Pin Symbol Pin Symbol
Row A
1 TDO/SWO 2 P0[3]/RXD0/AD0[6] 3 VDD(3V3) 4 P1[4]/ENET_TX_EN
5 P1[10]/ENET_RXD1 6 P1[16]/ENET_MDC 7 VDD(REG)(3V3) 8 P0[4]/I2SRX_CLK/
RD2/CAP2[0]
9 P0[7]/I2STX_CLK/
SCK1/MAT2[1]
10 P0[9]/I2STX_SDA/
MOSI1/MAT2[3]
11 - 12 -
Row B
1 TMS/SWDIO 2 RTCK 3 VSS 4 P1[1]/ENET_TXD1
5 P1[9]/ENET_RXD0 6 P1[17]/
ENET_MDIO
7 VSS 8 P0[6]/I2SRX_SDA/
SSEL1/MAT2[0]
9 P2[0]/PWM1[1]/TXD1 10 P2[1]/PWM1[2]/RXD1 11 - 12 -
Row C
1 TCK/SWDCLK 2 TRST 3 TDI 4 P0[2]/TXD0/AD0[7]
5 P1[8]/ENET_CRS 6 P1[15]/
ENET_REF_CLK
7 P4[28]/RX_MCLK/
MAT2[0]/TXD3
8 P0[8]/I2STX_WS/
MISO1/MAT2[2]
9 VSS 10 VDD(3V3) 11 - 12 -
Row D
1 P0[24]/AD0[1]/
I2SRX_WS/CAP3[1]
2 P0[25]/AD0[2]/
I2SRX_SDA/TXD3
3 P0[26]/AD0[3]/
AOUT/RXD3
4 n.c.
5 P1[0]/ENET_TXD0 6 P1[14]/ENET_RX_ER 7 P0[5]/I2SRX_WS/
TD2/CAP2[1]
8 P2[2]/PWM1[3]/
CTS1/TRACEDATA[3]
9 P2[4]/PWM1[5]/
DSR1/TRACEDATA[1]
10 P2[5]/PWM1[6]/
DTR1/TRACEDATA[0]
11 - 12 -
Row E
1 VSSA 2 VDDA 3 VREFP 4 n.c.
5 P0[23]/AD0[0]/
I2SRX_CLK/CAP3[0]
6 P4[29]/TX_MCLK/
MAT2[1]/RXD3
7 P2[3]/PWM1[4]/
DCD1/TRACEDATA[2]
8 P2[6]/PCAP1[0]/
RI1/TRACECLKLPC1769_68_67_66_65_64_63 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet Rev. 9.5 — 24 June 2014 9 of 89
NXP Semiconductors LPC1769/68/67/66/65/64/63
32-bit ARM Cortex-M3 microcontroller
9 P2[7]/RD2/RTS1 10 P2[8]/TD2/TXD2 11 - 12 -
Row F
1 VREFN 2 RTCX1 3 RESET 4 P1[31]/SCK1/
AD0[5]
5 P1[21]/MCABORT/
PWM1[3]/SSEL0
6 P0[18]/DCD1/
MOSI0/MOSI
7 P2[9]/USB_CONNECT/
RXD2
8 P0[16]/RXD1/
SSEL0/SSEL
9 P0[17]/CTS1/
MISO0/MISO
10 P0[15]/TXD1/
SCK0/SCK
11 - 12 -
Row G
1 RTCX2 2 VBAT 3 XTAL2 4 P0[30]/USB_D
5 P1[25]/MCOA1/
MAT1[1]
6 P1[29]/MCOB2/
PCAP1[1]/MAT0[1]
7 VSS 8 P0[21]/RI1/RD1
9 P0[20]/DTR1/SCL1 10 P0[19]/DSR1/SDA1 11 - 12 -
Row H
1 P1[30]/VBUS/
AD0[4]
2 XTAL1 3 P3[25]/MAT0[0]/
PWM1[2]
4 P1[18]/USB_UP_LED/
PWM1[1]/CAP1[0]
5 P1[24]/MCI2/
PWM1[5]/MOSI0
6 VDD(REG)(3V3) 7 P0[10]/TXD2/
SDA2/MAT3[0]
8 P2[11]/EINT1/
I2STX_CLK
9 VDD(3V3) 10 P0[22]/RTS1/TD1 11 - 12 -
Table 4. Pin allocation table TFBGA100 …continued
Pin Symbol Pin Symbol Pin Symbol Pin SymbolLPC1769_68_67_66_65_64_63 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet Rev. 9.5 — 24 June 2014 10 of 89
NXP Semiconductors LPC1769/68/67/66/65/64/63
32-bit ARM Cortex-M3 microcontroller
7.2 Pin description
Row J
1 P0[28]/SCL0/
USB_SCL
2 P0[27]/SDA0/
USB_SDA
3 P0[29]/USB_D+ 4 P1[19]/MCOA0/
USB_PPWR/
CAP1[1]
5 P1[22]/MCOB0/
USB_PWRD/
MAT1[0]
6 VSS 7 P1[28]/MCOA2/
PCAP1[0]/
MAT0[0]
8 P0[1]/TD1/RXD3/SCL1
9 P2[13]/EINT3/
I2STX_SDA
10 P2[10]/EINT0/NMI 11 - 12 -
Row K
1 P3[26]/STCLK/
MAT0[1]/PWM1[3]
2 VDD(3V3) 3 VSS 4 P1[20]/MCI0/
PWM1[2]/SCK0
5 P1[23]/MCI1/
PWM1[4]/MISO0
6 P1[26]/MCOB1/
PWM1[6]/CAP0[0]
7 P1[27]/CLKOUT
/USB_OVRCR/
CAP0[1]
8 P0[0]/RD1/TXD3/SDA1
9 P0[11]/RXD2/
SCL2/MAT3[1]
10 P2[12]/EINT2/
I2STX_WS
11 - 12 -
Table 4. Pin allocation table TFBGA100 …continued
Pin Symbol Pin Symbol Pin Symbol Pin Symbol
Table 5. Pin description
Symbol Pin/ball Type Description LQFP100 TFBGA100 WLCSP100
P0[0] to P0[31] I/O Port 0: Port 0 is a 32-bit I/O port with individual direction controls for
each bit. The operation of port 0 pins depends upon the pin function
selected via the pin connect block. Pins 12, 13, 14, and 31 of this
port are not available.
P0[0]/RD1/TXD3/
SDA1
46 K8 H10 [1] I/O P0[0] — General purpose digital input/output pin.
I RD1 — CAN1 receiver input. (LPC1769/68/66/65/64 only).
O TXD3 — Transmitter output for UART3.
I/O SDA1 — I
2C1 data input/output. (This is not an I2C-bus compliant
open-drain pin).
P0[1]/TD1/RXD3/
SCL1
47 J8 H9 [1] I/O P0[1] — General purpose digital input/output pin.
O TD1 — CAN1 transmitter output. (LPC1769/68/66/65/64 only).
I RXD3 — Receiver input for UART3.
I/O SCL1 — I
2C1 clock input/output. (This is not an I2C-bus compliant
open-drain pin).
P0[2]/TXD0/AD0[7] 98 C4 B1 [2] I/O P0[2] — General purpose digital input/output pin.
O TXD0 — Transmitter output for UART0.
I AD0[7] — A/D converter 0, input 7.
P0[3]/RXD0/AD0[6] 99 A2 C3 [2] I/O P0[3] — General purpose digital input/output pin.
I RXD0 — Receiver input for UART0.
I AD0[6] — A/D converter 0, input 6.LPC1769_68_67_66_65_64_63 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet Rev. 9.5 — 24 June 2014 11 of 89
NXP Semiconductors LPC1769/68/67/66/65/64/63
32-bit ARM Cortex-M3 microcontroller
P0[4]/
I2SRX_CLK/
RD2/CAP2[0]
81 A8 G2 [1] I/O P0[4] — General purpose digital input/output pin.
I/O I2SRX_CLK — Receive Clock. It is driven by the master and
received by the slave. Corresponds to the signal SCK in the I
2S-bus
specification. (LPC1769/68/67/66/65/63 only).
I RD2 — CAN2 receiver input. (LPC1769/68/66/65/64 only).
I CAP2[0] — Capture input for Timer 2, channel 0.
P0[5]/
I2SRX_WS/
TD2/CAP2[1]
80 D7 H1 [1] I/O P0[5] — General purpose digital input/output pin.
I/O I2SRX_WS — Receive Word Select. It is driven by the master and
received by the slave. Corresponds to the signal WS in the I2S-bus
specification. (LPC1769/68/67/66/65/63 only).
O TD2 — CAN2 transmitter output. (LPC1769/68/66/65/64 only).
I CAP2[1] — Capture input for Timer 2, channel 1.
P0[6]/
I2SRX_SDA/
SSEL1/MAT2[0]
79 B8 G3 [1] I/O P0[6] — General purpose digital input/output pin.
I/O I2SRX_SDA — Receive data. It is driven by the transmitter and read
by the receiver. Corresponds to the signal SD in the I2S-bus
specification. (LPC1769/68/67/66/65/63 only).
I/O SSEL1 — Slave Select for SSP1.
O MAT2[0] — Match output for Timer 2, channel 0.
P0[7]/
I2STX_CLK/
SCK1/MAT2[1]
78 A9 J1 [1] I/O P0[7] — General purpose digital input/output pin.
I/O I2STX_CLK — Transmit Clock. It is driven by the master and
received by the slave. Corresponds to the signal SCK in the I
2S-bus
specification. (LPC1769/68/67/66/65/63 only).
I/O SCK1 — Serial Clock for SSP1.
O MAT2[1] — Match output for Timer 2, channel 1.
P0[8]/
I2STX_WS/
MISO1/MAT2[2]
77 C8 H2 [1] I/O P0[8] — General purpose digital input/output pin.
I/O I2STX_WS — Transmit Word Select. It is driven by the master and
received by the slave. Corresponds to the signal WS in the I
2S-bus
specification. (LPC1769/68/67/66/65/63 only).
I/O MISO1 — Master In Slave Out for SSP1.
O MAT2[2] — Match output for Timer 2, channel 2.
P0[9]/
I2STX_SDA/
MOSI1/MAT2[3]
76 A10 H3 [1] I/O P0[9] — General purpose digital input/output pin.
I/O I2STX_SDA — Transmit data. It is driven by the transmitter and
read by the receiver. Corresponds to the signal SD in the I
2S-bus
specification. (LPC1769/68/67/66/65/63 only).
I/O MOSI1 — Master Out Slave In for SSP1.
O MAT2[3] — Match output for Timer 2, channel 3.
P0[10]/TXD2/
SDA2/MAT3[0]
48 H7 H8 [1] I/O P0[10] — General purpose digital input/output pin.
O TXD2 — Transmitter output for UART2.
I/O SDA2 — I
2C2 data input/output (this is not an open-drain pin).
O MAT3[0] — Match output for Timer 3, channel 0.
Table 5. Pin description …continued
Symbol Pin/ball Type Description LQFP100 TFBGA100 WLCSP100LPC1769_68_67_66_65_64_63 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet Rev. 9.5 — 24 June 2014 12 of 89
NXP Semiconductors LPC1769/68/67/66/65/64/63
32-bit ARM Cortex-M3 microcontroller
P0[11]/RXD2/
SCL2/MAT3[1]
49 K9 J10 [1] I/O P0[11] — General purpose digital input/output pin.
I RXD2 — Receiver input for UART2.
I/O SCL2 — I
2C2 clock input/output (this is not an open-drain pin).
O MAT3[1] — Match output for Timer 3, channel 1.
P0[15]/TXD1/
SCK0/SCK
62 F10 H6 [1] I/O P0[15] — General purpose digital input/output pin.
O TXD1 — Transmitter output for UART1.
I/O SCK0 — Serial clock for SSP0.
I/O SCK — Serial clock for SPI.
P0[16]/RXD1/
SSEL0/SSEL
63 F8 J5 [1] I/O P0[16] — General purpose digital input/output pin.
I RXD1 — Receiver input for UART1.
I/O SSEL0 — Slave Select for SSP0.
I/O SSEL — Slave Select for SPI.
P0[17]/CTS1/
MISO0/MISO
61 F9 K6 [1] I/O P0[17] — General purpose digital input/output pin.
I CTS1 — Clear to Send input for UART1.
I/O MISO0 — Master In Slave Out for SSP0.
I/O MISO — Master In Slave Out for SPI.
P0[18]/DCD1/
MOSI0/MOSI
60 F6 J6 [1] I/O P0[18] — General purpose digital input/output pin.
I DCD1 — Data Carrier Detect input for UART1.
I/O MOSI0 — Master Out Slave In for SSP0.
I/O MOSI — Master Out Slave In for SPI.
P0[19]/DSR1/
SDA1
59 G10 K7 [1] I/O P0[19] — General purpose digital input/output pin.
I DSR1 — Data Set Ready input for UART1.
I/O SDA1 — I
2C1 data input/output (this is not an I2C-bus compliant
open-drain pin).
P0[20]/DTR1/SCL1 58 G9 J7 [1] I/O P0[20] — General purpose digital input/output pin.
O DTR1 — Data Terminal Ready output for UART1. Can also be
configured to be an RS-485/EIA-485 output enable signal.
I/O SCL1 — I
2C1 clock input/output (this is not an I2C-bus compliant
open-drain pin).
P0[21]/RI1/RD1 57 G8 H7 [1] I/O P0[21] — General purpose digital input/output pin.
I RI1 — Ring Indicator input for UART1.
I RD1 — CAN1 receiver input. (LPC1769/68/66/65/64 only).
P0[22]/RTS1/TD1 56 H10 K8 [1] I/O P0[22] — General purpose digital input/output pin.
O RTS1 — Request to Send output for UART1. Can also be
configured to be an RS-485/EIA-485 output enable signal.
O TD1 — CAN1 transmitter output. (LPC1769/68/66/65/64 only).
Table 5. Pin description …continued
Symbol Pin/ball Type Description LQFP100 TFBGA100 WLCSP100LPC1769_68_67_66_65_64_63 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet Rev. 9.5 — 24 June 2014 13 of 89
NXP Semiconductors LPC1769/68/67/66/65/64/63
32-bit ARM Cortex-M3 microcontroller
P0[23]/AD0[0]/
I2SRX_CLK/
CAP3[0]
9 E5 D5 [2] I/O P0[23] — General purpose digital input/output pin.
I AD0[0] — A/D converter 0, input 0.
I/O I2SRX_CLK — Receive Clock. It is driven by the master and
received by the slave. Corresponds to the signal SCK in the I
2S-bus
specification. (LPC1769/68/67/66/65/63 only).
I CAP3[0] — Capture input for Timer 3, channel 0.
P0[24]/AD0[1]/
I2SRX_WS/
CAP3[1]
8 D1 B4 [2] I/O P0[24] — General purpose digital input/output pin.
I AD0[1] — A/D converter 0, input 1.
I/O I2SRX_WS — Receive Word Select. It is driven by the master and
received by the slave. Corresponds to the signal WS in the I
2S-bus
specification. (LPC1769/68/67/66/65/63 only).
I CAP3[1] — Capture input for Timer 3, channel 1.
P0[25]/AD0[2]/
I2SRX_SDA/
TXD3
7 D2 A3 [2] I/O P0[25] — General purpose digital input/output pin.
I AD0[2] — A/D converter 0, input 2.
I/O I2SRX_SDA — Receive data. It is driven by the transmitter and read
by the receiver. Corresponds to the signal SD in the I
2S-bus
specification. (LPC1769/68/67/66/65/63 only).
O TXD3 — Transmitter output for UART3.
P0[26]/AD0[3]/
AOUT/RXD3
6 D3 C5 [3] I/O P0[26] — General purpose digital input/output pin.
I AD0[3] — A/D converter 0, input 3.
O AOUT — DAC output (LPC1769/68/67/66/65/63 only).
I RXD3 — Receiver input for UART3.
P0[27]/SDA0/
USB_SDA
25 J2 C8 [4] I/O P0[27] — General purpose digital input/output pin. Output is
open-drain.
I/O SDA0 — I
2C0 data input/output. Open-drain output (for I2C-bus
compliance).
I/O USB_SDA — USB port I2C serial data (OTG transceiver,
LPC1769/68/66/65 only).
P0[28]/SCL0/
USB_SCL
24 J1 B9 [4] I/O P0[28] — General purpose digital input/output pin. Output is
open-drain.
I/O SCL0 — I
2C0 clock input/output. Open-drain output (for I2C-bus
compliance).
I/O USB_SCL — USB port I2C serial clock (OTG transceiver,
LPC1769/68/66/65 only).
P0[29]/USB_D+ 29 J3 B10 [5] I/O P0[29] — General purpose digital input/output pin.
I/O USB_D+ — USB bidirectional D+ line. (LPC1769/68/66/65/64 only).
P0[30]/USB_D 30 G4 C9 [5] I/O P0[30] — General purpose digital input/output pin.
I/O USB_D — USB bidirectional D line. (LPC1769/68/66/65/64 only).
Table 5. Pin description …continued
Symbol Pin/ball Type Description LQFP100 TFBGA100 WLCSP100LPC1769_68_67_66_65_64_63 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet Rev. 9.5 — 24 June 2014 14 of 89
NXP Semiconductors LPC1769/68/67/66/65/64/63
32-bit ARM Cortex-M3 microcontroller
P1[0] to P1[31] I/O Port 1: Port 1 is a 32-bit I/O port with individual direction controls for
each bit. The operation of port 1 pins depends upon the pin function
selected via the pin connect block. Pins 2, 3, 5, 6, 7, 11, 12, and 13
of this port are not available.
P1[0]/
ENET_TXD0
95 D5 C1 [1] I/O P1[0] — General purpose digital input/output pin.
O ENET_TXD0 — Ethernet transmit data 0. (LPC1769/68/67/66/64
only).
P1[1]/
ENET_TXD1
94 B4 C2 [1] I/O P1[1] — General purpose digital input/output pin.
O ENET_TXD1 — Ethernet transmit data 1. (LPC1769/68/67/66/64
only).
P1[4]/
ENET_TX_EN
93 A4 D2 [1] I/O P1[4] — General purpose digital input/output pin.
O ENET_TX_EN — Ethernet transmit data enable.
(LPC1769/68/67/66/64 only).
P1[8]/
ENET_CRS
92 C5 D1 [1] I/O P1[8] — General purpose digital input/output pin.
I ENET_CRS — Ethernet carrier sense. (LPC1769/68/67/66/64 only).
P1[9]/
ENET_RXD0
91 B5 D3 [1] I/O P1[9] — General purpose digital input/output pin.
I ENET_RXD0 — Ethernet receive data. (LPC1769/68/67/66/64
only).
P1[10]/
ENET_RXD1
90 A5 E3 [1] I/O P1[10] — General purpose digital input/output pin.
I ENET_RXD1 — Ethernet receive data. (LPC1769/68/67/66/64
only).
P1[14]/
ENET_RX_ER
89 D6 E2 [1] I/O P1[14] — General purpose digital input/output pin.
I ENET_RX_ER — Ethernet receive error. (LPC1769/68/67/66/64
only).
P1[15]/
ENET_REF_CLK
88 C6 E1 [1] I/O P1[15] — General purpose digital input/output pin.
I ENET_REF_CLK — Ethernet reference clock.
(LPC1769/68/67/66/64 only).
P1[16]/
ENET_MDC
87 A6 F3 [1] I/O P1[16] — General purpose digital input/output pin.
O ENET_MDC — Ethernet MIIM clock (LPC1769/68/67/66/64 only).
P1[17]/
ENET_MDIO
86 B6 F2 [1] I/O P1[17] — General purpose digital input/output pin.
I/O ENET_MDIO — Ethernet MIIM data input and output.
(LPC1769/68/67/66/64 only).
Table 5. Pin description …continued
Symbol Pin/ball Type Description LQFP100 TFBGA100 WLCSP100LPC1769_68_67_66_65_64_63 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet Rev. 9.5 — 24 June 2014 15 of 89
NXP Semiconductors LPC1769/68/67/66/65/64/63
32-bit ARM Cortex-M3 microcontroller
P1[18]/
USB_UP_LED/
PWM1[1]/
CAP1[0]
32 H4 D9 [1] I/O P1[18] — General purpose digital input/output pin.
O USB_UP_LED — USB GoodLink LED indicator. It is LOW when the
device is configured (non-control endpoints enabled), or when the
host is enabled and has detected a device on the bus. It is HIGH
when the device is not configured, or when host is enabled and has
not detected a device on the bus, or during global suspend. It
transitions between LOW and HIGH (flashes) when the host is
enabled and detects activity on the bus. (LPC1769/68/66/65/64
only).
O PWM1[1] — Pulse Width Modulator 1, channel 1 output.
I CAP1[0] — Capture input for Timer 1, channel 0.
P1[19]/MCOA0/
USB_PPWR/
CAP1[1]
33 J4 C10 [1] I/O P1[19] — General purpose digital input/output pin.
O MCOA0 — Motor control PWM channel 0, output A.
O USB_PPWR — Port Power enable signal for USB port.
(LPC1769/68/66/65 only).
I CAP1[1] — Capture input for Timer 1, channel 1.
P1[20]/MCI0/
PWM1[2]/SCK0
34 K4 E8 [1] I/O P1[20] — General purpose digital input/output pin.
I MCI0 — Motor control PWM channel 0, input. Also Quadrature
Encoder Interface PHA input.
O PWM1[2] — Pulse Width Modulator 1, channel 2 output.
I/O SCK0 — Serial clock for SSP0.
P1[21]/MCABORT/
PWM1[3]/
SSEL0
35 F5 E9 [1] I/O P1[21] — General purpose digital input/output pin.
O MCABORT — Motor control PWM, LOW-active fast abort.
O PWM1[3] — Pulse Width Modulator 1, channel 3 output.
I/O SSEL0 — Slave Select for SSP0.
P1[22]/MCOB0/
USB_PWRD/
MAT1[0]
36 J5 D10 [1] I/O P1[22] — General purpose digital input/output pin.
O MCOB0 — Motor control PWM channel 0, output B.
I USB_PWRD — Power Status for USB port (host power switch,
LPC1769/68/66/65 only).
O MAT1[0] — Match output for Timer 1, channel 0.
P1[23]/MCI1/
PWM1[4]/MISO0
37 K5 E7 [1] I/O P1[23] — General purpose digital input/output pin.
I MCI1 — Motor control PWM channel 1, input. Also Quadrature
Encoder Interface PHB input.
O PWM1[4] — Pulse Width Modulator 1, channel 4 output.
I/O MISO0 — Master In Slave Out for SSP0.
P1[24]/MCI2/
PWM1[5]/MOSI0
38 H5 F8 [1] I/O P1[24] — General purpose digital input/output pin.
I MCI2 — Motor control PWM channel 2, input. Also Quadrature
Encoder Interface INDEX input.
O PWM1[5] — Pulse Width Modulator 1, channel 5 output.
I/O MOSI0 — Master Out Slave in for SSP0.
Table 5. Pin description …continued
Symbol Pin/ball Type Description LQFP100 TFBGA100 WLCSP100LPC1769_68_67_66_65_64_63 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet Rev. 9.5 — 24 June 2014 16 of 89
NXP Semiconductors LPC1769/68/67/66/65/64/63
32-bit ARM Cortex-M3 microcontroller
P1[25]/MCOA1/
MAT1[1]
39 G5 F9 [1] I/O P1[25] — General purpose digital input/output pin.
O MCOA1 — Motor control PWM channel 1, output A.
O MAT1[1] — Match output for Timer 1, channel 1.
P1[26]/MCOB1/
PWM1[6]/CAP0[0]
40 K6 E10 [1] I/O P1[26] — General purpose digital input/output pin.
O MCOB1 — Motor control PWM channel 1, output B.
O PWM1[6] — Pulse Width Modulator 1, channel 6 output.
I CAP0[0] — Capture input for Timer 0, channel 0.
P1[27]/CLKOUT
/USB_OVRCR/
CAP0[1]
43 K7 G9 [1] I/O P1[27] — General purpose digital input/output pin.
O CLKOUT — Clock output pin.
I USB_OVRCR — USB port Over-Current status. (LPC1769/68/66/65
only).
I CAP0[1] — Capture input for Timer 0, channel 1.
P1[28]/MCOA2/
PCAP1[0]/
MAT0[0]
44 J7 G10 [1] I/O P1[28] — General purpose digital input/output pin.
O MCOA2 — Motor control PWM channel 2, output A.
I PCAP1[0] — Capture input for PWM1, channel 0.
O MAT0[0] — Match output for Timer 0, channel 0.
P1[29]/MCOB2/
PCAP1[1]/
MAT0[1]
45 G6 G8 [1] I/O P1[29] — General purpose digital input/output pin.
O MCOB2 — Motor control PWM channel 2, output B.
I PCAP1[1] — Capture input for PWM1, channel 1.
O MAT0[1] — Match output for Timer 0, channel 1.
P1[30]/VBUS/
AD0[4]
21 H1 B8 [2] I/O P1[30] — General purpose digital input/output pin.
I VBUS — Monitors the presence of USB bus power.
(LPC1769/68/66/65/64 only).
Note: This signal must be HIGH for USB reset to occur.
I AD0[4] — A/D converter 0, input 4.
P1[31]/SCK1/
AD0[5]
20 F4 C7 [2] I/O P1[31] — General purpose digital input/output pin.
I/O SCK1 — Serial Clock for SSP1.
I AD0[5] — A/D converter 0, input 5.
P2[0] to P2[31] I/O Port 2: Port 2 is a 32-bit I/O port with individual direction controls for
each bit. The operation of port 2 pins depends upon the pin function
selected via the pin connect block. Pins 14 through 31 of this port
are not available.
P2[0]/PWM1[1]/
TXD1
75 B9 K1 [1] I/O P2[0] — General purpose digital input/output pin.
O PWM1[1] — Pulse Width Modulator 1, channel 1 output.
O TXD1 — Transmitter output for UART1.
P2[1]/PWM1[2]/
RXD1
74 B10 J2 [1] I/O P2[1] — General purpose digital input/output pin.
O PWM1[2] — Pulse Width Modulator 1, channel 2 output.
I RXD1 — Receiver input for UART1.
Table 5. Pin description …continued
Symbol Pin/ball Type Description LQFP100 TFBGA100 WLCSP100LPC1769_68_67_66_65_64_63 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet Rev. 9.5 — 24 June 2014 17 of 89
NXP Semiconductors LPC1769/68/67/66/65/64/63
32-bit ARM Cortex-M3 microcontroller
P2[2]/PWM1[3]/
CTS1/
TRACEDATA[3]
73 D8 K2 [1] I/O P2[2] — General purpose digital input/output pin.
O PWM1[3] — Pulse Width Modulator 1, channel 3 output.
I CTS1 — Clear to Send input for UART1.
O TRACEDATA[3] — Trace data, bit 3.
P2[3]/PWM1[4]/
DCD1/
TRACEDATA[2]
70 E7 K3 [1] I/O P2[3] — General purpose digital input/output pin.
O PWM1[4] — Pulse Width Modulator 1, channel 4 output.
I DCD1 — Data Carrier Detect input for UART1.
O TRACEDATA[2] — Trace data, bit 2.
P2[4]/PWM1[5]/
DSR1/
TRACEDATA[1]
69 D9 J3 [1] I/O P2[4] — General purpose digital input/output pin.
O PWM1[5] — Pulse Width Modulator 1, channel 5 output.
I DSR1 — Data Set Ready input for UART1.
O TRACEDATA[1] — Trace data, bit 1.
P2[5]/PWM1[6]/
DTR1/
TRACEDATA[0]
68 D10 H4 [1] I/O P2[5] — General purpose digital input/output pin.
O PWM1[6] — Pulse Width Modulator 1, channel 6 output.
O DTR1 — Data Terminal Ready output for UART1. Can also be
configured to be an RS-485/EIA-485 output enable signal.
O TRACEDATA[0] — Trace data, bit 0.
P2[6]/PCAP1[0]/
RI1/TRACECLK
67 E8 K4 [1] I/O P2[6] — General purpose digital input/output pin.
I PCAP1[0] — Capture input for PWM1, channel 0.
I RI1 — Ring Indicator input for UART1.
O TRACECLK — Trace Clock.
P2[7]/RD2/
RTS1
66 E9 J4 [1] I/O P2[7] — General purpose digital input/output pin.
I RD2 — CAN2 receiver input. (LPC1769/68/66/65/64 only).
O RTS1 — Request to Send output for UART1. Can also be
configured to be an RS-485/EIA-485 output enable signal.
P2[8]/TD2/
TXD2
65 E10 H5 [1] I/O P2[8] — General purpose digital input/output pin.
O TD2 — CAN2 transmitter output. (LPC1769/68/66/65/64 only).
O TXD2 — Transmitter output for UART2.
P2[9]/
USB_CONNECT/
RXD2
64 F7 K5 [1] I/O P2[9] — General purpose digital input/output pin.
O USB_CONNECT — Signal used to switch an external 1.5 k
resistor under software control. Used with the SoftConnect USB
feature. (LPC1769/68/66/65/64 only).
I RXD2 — Receiver input for UART2.
P2[10]/EINT0/NMI 53 J10 K9 [6] I/O P2[10] — General purpose digital input/output pin. A LOW level on
this pin during reset starts the ISP command handler.
I EINT0 — External interrupt 0 input.
I NMI — Non-maskable interrupt input.
Table 5. Pin description …continued
Symbol Pin/ball Type Description LQFP100 TFBGA100 WLCSP100LPC1769_68_67_66_65_64_63 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet Rev. 9.5 — 24 June 2014 18 of 89
NXP Semiconductors LPC1769/68/67/66/65/64/63
32-bit ARM Cortex-M3 microcontroller
P2[11]/EINT1/
I2STX_CLK
52 H8 J8 [6] I/O P2[11] — General purpose digital input/output pin.
I EINT1 — External interrupt 1 input.
I/O I2STX_CLK — Transmit Clock. It is driven by the master and
received by the slave. Corresponds to the signal SCK in the I
2S-bus
specification. (LPC1769/68/67/66/65/63 only).
P2[12]/EINT2/
I2STX_WS
51 K10 K10 [6] I/O P2[12] — General purpose digital input/output pin.
I EINT2 — External interrupt 2 input.
I/O I2STX_WS — Transmit Word Select. It is driven by the master and
received by the slave. Corresponds to the signal WS in the I
2S-bus
specification. (LPC1769/68/67/66/65/63 only).
P2[13]/EINT3/
I2STX_SDA
50 J9 J9 [6] I/O P2[13] — General purpose digital input/output pin.
I EINT3 — External interrupt 3 input.
I/O I2STX_SDA — Transmit data. It is driven by the transmitter and
read by the receiver. Corresponds to the signal SD in the I
2S-bus
specification. (LPC1769/68/67/66/65/63 only).
P3[0] to P3[31] I/O Port 3: Port 3 is a 32-bit I/O port with individual direction controls for
each bit. The operation of port 3 pins depends upon the pin function
selected via the pin connect block. Pins 0 through 24, and 27
through 31 of this port are not available.
P3[25]/MAT0[0]/
PWM1[2]
27 H3 D8 [1] I/O P3[25] — General purpose digital input/output pin.
O MAT0[0] — Match output for Timer 0, channel 0.
O PWM1[2] — Pulse Width Modulator 1, output 2.
P3[26]/STCLK/
MAT0[1]/PWM1[3]
26 K1 A10 [1] I/O P3[26] — General purpose digital input/output pin.
I STCLK — System tick timer clock input. The maximum STCLK
frequency is 1/4 of the ARM processor clock frequency CCLK.
O MAT0[1] — Match output for Timer 0, channel 1.
O PWM1[3] — Pulse Width Modulator 1, output 3.
P4[0] to P4[31] I/O Port 4: Port 4 is a 32-bit I/O port with individual direction controls for
each bit. The operation of port 4 pins depends upon the pin function
selected via the pin connect block. Pins 0 through 27, 30, and 31 of
this port are not available.
P4[28]/RX_MCLK/
MAT2[0]/TXD3
82 C7 G1 [1] I/O P4[28] — General purpose digital input/output pin.
O RX_MCLK — I
2S receive master clock. (LPC1769/68/67/66/65
only).
O MAT2[0] — Match output for Timer 2, channel 0.
O TXD3 — Transmitter output for UART3.
P4[29]/TX_MCLK/
MAT2[1]/RXD3
85 E6 F1 [1] I/O P4[29] — General purpose digital input/output pin.
O TX_MCLK — I
2S transmit master clock. (LPC1769/68/67/66/65
only).
O MAT2[1] — Match output for Timer 2, channel 1.
I RXD3 — Receiver input for UART3.
Table 5. Pin description …continued
Symbol Pin/ball Type Description LQFP100 TFBGA100 WLCSP100LPC1769_68_67_66_65_64_63 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet Rev. 9.5 — 24 June 2014 19 of 89
NXP Semiconductors LPC1769/68/67/66/65/64/63
32-bit ARM Cortex-M3 microcontroller
TDO/SWO 1 A1 A1 [1][7] O TDO — Test Data out for JTAG interface.
O SWO — Serial wire trace output.
TDI 2 C3 C4 [1][8] I TDI — Test Data in for JTAG interface.
TMS/SWDIO 3 B1 B3 [1][8] I TMS — Test Mode Select for JTAG interface.
I/O SWDIO — Serial wire debug data input/output.
TRST 4 C2 A2 [1][8] I TRST — Test Reset for JTAG interface.
TCK/SWDCLK 5 C1 D4 [1][7] I TCK — Test Clock for JTAG interface.
I SWDCLK — Serial wire clock.
RTCK 100 B2 B2 [1][7] O RTCK — JTAG interface control signal.
RSTOUT 14 - - - O RSTOUT — This is a 3.3 V pin. LOW on this pin indicates the
microcontroller being in Reset state.
RESET 17 F3 C6 [9] I External reset input: A LOW-going pulse as short as 50 ns on this
pin resets the device, causing I/O ports and peripherals to take on
their default states, and processor execution to begin at address 0.
TTL with hysteresis, 5 V tolerant.
XTAL1 22 H2 D7 [10][11] I Input to the oscillator circuit and internal clock generator circuits.
XTAL2 23 G3 A9 [10][11] O Output from the oscillator amplifier.
RTCX1 16 F2 A7 [10][11] I Input to the RTC oscillator circuit.
RTCX2 18 G1 B7 [10] O Output from the RTC oscillator circuit.
VSS 31,
41,
55,
72,
83,
97
B3,
B7,
C9,
G7,
J6,
K3
E5,
F5,
F6,
G5,
G6,
G7
[10] I ground: 0 V reference.
VSSA 11 E1 B5 [10] I analog ground: 0 V reference. This should nominally be the same
voltage as VSS, but should be isolated to minimize noise and error.
VDD(3V3) 28,
54,
71,
96
K2,
H9,
C10
, A3
E4,
E6,
F7,
G4
[10] I 3.3 V supply voltage: This is the power supply voltage for the I/O
ports.
VDD(REG)(3V3) 42,
84
H6,
A7
F4,
F0
[10] I 3.3 V voltage regulator supply voltage: This is the supply voltage
for the on-chip voltage regulator only.
VDDA 10 E2 A4 [10] I analog 3.3 V pad supply voltage: This should be nominally the
same voltage as VDD(3V3) but should be isolated to minimize noise
and error. This voltage is used to power the ADC and DAC. This pin
should be tied to 3.3 V if the ADC and DAC are not used.
VREFP 12 E3 A5 [10] I ADC positive reference voltage: This should be nominally the
same voltage as VDDA but should be isolated to minimize noise and
error. Level on this pin is used as a reference for ADC and DAC.
This pin should be tied to 3.3 V if the ADC and DAC are not used.
Table 5. Pin description …continued
Symbol Pin/ball Type Description LQFP100 TFBGA100 WLCSP100LPC1769_68_67_66_65_64_63 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet Rev. 9.5 — 24 June 2014 20 of 89
NXP Semiconductors LPC1769/68/67/66/65/64/63
32-bit ARM Cortex-M3 microcontroller
[1] 5 V tolerant pad providing digital I/O functions with TTL levels and hysteresis. This pin is pulled up to a voltage level of 2.3 V to 2.6 V.
[2] 5 V tolerant pad providing digital I/O functions (with TTL levels and hysteresis) and analog input. When configured as a ADC input,
digital section of the pad is disabled and the pin is not 5 V tolerant. This pin is pulled up to a voltage level of 2.3 V to 2.6 V.
[3] 5 V tolerant pad providing digital I/O with TTL levels and hysteresis and analog output function. When configured as the DAC output,
digital section of the pad is disabled. This pin is pulled up to a voltage level of 2.3 V to 2.6 V.
[4] Open-drain 5 V tolerant digital I/O pad, compatible with I2C-bus 400 kHz specification. This pad requires an external pull-up to provide
output functionality. When power is switched off, this pin connected to the I2C-bus is floating and does not disturb the I2C lines.
Open-drain configuration applies to all functions on this pin.
[5] Pad provides digital I/O and USB functions. It is designed in accordance with the USB specification, revision 2.0 (Full-speed and
Low-speed mode only). This pad is not 5 V tolerant.
[6] 5 V tolerant pad with 10 ns glitch filter providing digital I/O functions with TTL levels and hysteresis. This pin is pulled up to a voltage
level of 2.3 V to 2.6 V.
[7] 5 V tolerant pad with TTL levels and hysteresis. Internal pull-up and pull-down resistors disabled.
[8] 5 V tolerant pad with TTL levels and hysteresis and internal pull-up resistor.
[9] 5 V tolerant pad with 20 ns glitch filter providing digital I/O function with TTL levels and hysteresis.
[10] Pad provides special analog functionality. A 32 kHz crystal oscillator must be used with the RTC.
[11] When the system oscillator is not used, connect XTAL1 and XTAL2 as follows: XTAL1 can be left floating or can be grounded (grounding
is preferred to reduce susceptibility to noise). XTAL2 should be left floating.
[12] When the RTC is not used, connect VBAT to VDD(REG)(3V3) and leave RTCX1 floating.
VREFN 15 F1 A6 I ADC negative reference voltage: This should be nominally the
same voltage as VSS but should be isolated to minimize noise and
error. Level on this pin is used as a reference for ADC and DAC.
VBAT 19 G2 A8 [10][12] I RTC pin power supply: 3.3 V on this pin supplies the power to the
RTC peripheral.
n.c. 13 D4,
E4
B6,
D6
- not connected.
Table 5. Pin description …continued
Symbol Pin/ball Type Description LQFP100 TFBGA100 WLCSP100LPC1769_68_67_66_65_64_63 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet Rev. 9.5 — 24 June 2014 21 of 89
NXP Semiconductors LPC1769/68/67/66/65/64/63
32-bit ARM Cortex-M3 microcontroller
8. Functional description
8.1 Architectural overview
Remark: In the following, the notation LPC17xx refers to all parts:
LPC1769/68/67/66/65/64/63.
The ARM Cortex-M3 includes three AHB-Lite buses: the system bus, the I-code bus, and
the D-code bus (see Figure 1). The I-code and D-code core buses are faster than the
system bus and are used similarly to TCM interfaces: one bus dedicated for instruction
fetch (I-code) and one bus for data access (D-code). The use of two core buses allows for
simultaneous operations if concurrent operations target different devices.
The LPC17xx use a multi-layer AHB matrix to connect the ARM Cortex-M3 buses and
other bus masters to peripherals in a flexible manner that optimizes performance by
allowing peripherals that are on different slaves ports of the matrix to be accessed
simultaneously by different bus masters.
8.2 ARM Cortex-M3 processor
The ARM Cortex-M3 is a general purpose, 32-bit microprocessor, which offers high
performance and very low power consumption. The ARM Cortex-M3 offers many new
features, including a Thumb-2 instruction set, low interrupt latency, hardware divide,
interruptible/continuable multiple load and store instructions, automatic state save and
restore for interrupts, tightly integrated interrupt controller with wake-up interrupt
controller, and multiple core buses capable of simultaneous accesses.
Pipeline techniques are employed so that all parts of the processing and memory systems
can operate continuously. Typically, while one instruction is being executed, its successor
is being decoded, and a third instruction is being fetched from memory.
The ARM Cortex-M3 processor is described in detail in the Cortex-M3 Technical
Reference Manual that can be found on official ARM website.
8.3 On-chip flash program memory
The LPC17xx contain up to 512 kB of on-chip flash memory. A new two-port flash
accelerator maximizes performance for use with the two fast AHB-Lite buses.
8.4 On-chip SRAM
The LPC17xx contain a total of 64 kB on-chip static RAM memory. This includes the main
32 kB SRAM, accessible by the CPU and DMA controller on a higher-speed bus, and two
additional 16 kB each SRAM blocks situated on a separate slave port on the AHB
multilayer matrix.
This architecture allows CPU and DMA accesses to be spread over three separate RAMs
that can be accessed simultaneously.
8.5 Memory Protection Unit (MPU)
The LPC17xx have a Memory Protection Unit (MPU) which can be used to improve the
reliability of an embedded system by protecting critical data within the user application.LPC1769_68_67_66_65_64_63 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet Rev. 9.5 — 24 June 2014 22 of 89
NXP Semiconductors LPC1769/68/67/66/65/64/63
32-bit ARM Cortex-M3 microcontroller
The MPU allows separating processing tasks by disallowing access to each other's data,
disabling access to memory regions, allowing memory regions to be defined as read-only
and detecting unexpected memory accesses that could potentially break the system.
The MPU separates the memory into distinct regions and implements protection by
preventing disallowed accesses. The MPU supports up to 8 regions each of which can be
divided into 8 subregions. Accesses to memory locations that are not defined in the MPU
regions, or not permitted by the region setting, will cause the Memory Management Fault
exception to take place.
8.6 Memory map
The LPC17xx incorporates several distinct memory regions, shown in the following
figures. Figure 5 shows the overall map of the entire address space from the user
program viewpoint following reset. The interrupt vector area supports address remapping.
The AHB peripheral area is 2 MB in size and is divided to allow for up to 128 peripherals.
The APB peripheral area is 1 MB in size and is divided to allow for up to 64 peripherals.
Each peripheral of either type is allocated 16 kB of space. This allows simplifying the
address decoding for each peripheral.xxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxx x x x xxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxx xx xx xxxxx
xxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxx xxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxx x x
xxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxx
xxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxx xxx
LPC1769_68_67_66_65_64_63 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet Rev. 9.5 — 24 June 2014 23 of 89
NXP Semiconductors LPC1769/68/67/66/65/64/63
32-bit ARM Cortex-M3 microcontroller (1) Not available on all parts. See Table 2. Fig 5. LPC17xx memory map
0x5000 0000
0x5000 4000
0x5000 8000
0x5000 C000
0x5020 0000
0x5001 0000
AHB peripherals
Ethernet controller(1)
USB controller(1)
reserved
127- 4 reserved
GPDMA controller
0
1
2
3
APB0 peripherals
0x4000 4000
0x4000 8000
0x4000 C000
0x4001 0000
0x4001 8000
0x4002 0000
0x4002 8000
0x4002 C000
0x4003 4000
0x4003 0000
0x4003 8000
0x4003 C000
0x4004 0000
0x4004 4000
0x4004 8000
0x4004 C000
0x4005 C000
0x4006 0000
0x4008 0000
0x4002 4000
0x4001 C000
0x4001 4000
WDT 0x4000 0000
timer 0
timer 1
UART0
UART1
reserved
reserved
SPI
RTC + backup registers
GPIO interrupts
pin connect
SSP1
ADC
CAN AF RAM(1)
CAN AF registers(1)
CAN common(1)
CAN1(1)
CAN2(1)
22 - 19 reserved
I2C1
31 - 24 reserved
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
23
reserved
reserved
32 kB local SRAM (LPC1769/8/7/6/5/3)
16 kB local SRAM (LPC1764)
reserved
reserved
private peripheral bus
0 GB 0x0000 0000
0.5 GB
4 GB
1 GB
0x0004 0000
0x0002 0000
0x0008 0000
0x1000 4000
0x1000 0000
0x1000 8000
0x1FFF 0000
0x1FFF 2000
0x2008 0000
0x2007 C000
0x2008 4000
0x2200 0000
0x200A 0000
0x2009 C000
0x2400 0000
0x4000 0000
0x4008 0000
0x4010 0000
0x4200 0000
0x4400 0000
0x5000 0000
0x5020 0000
0xE000 0000
0xE010 0000
0xFFFF FFFF
reserved
reserved
GPIO
reserved
reserved
reserved
reserved
APB0 peripherals
AHB peripherals
APB1 peripherals
AHB SRAM bit-band alias addressing
peripheral bit-band alias addressing
16 kB AHB SRAM1 (LPC1769/8/7/6/5)
16 kB AHB SRAM0
256 kB on-chip flash (LPC1766/65/63)
128 kB on-chip flash (LPC1764)
512 kB on-chip flash (LPC1769/8/7)
PWM1
8 kB boot ROM
0x0000 0000
0x0000 0400
active interrupt vectors
+ 256 words
I-code/D-code
memory space
002aad946
APB1 peripherals
0x4008 0000
0x4008 8000
0x4008 C000
0x4009 0000
0x4009 4000
0x4009 8000
0x4009 C000
0x400A 0000
0x400A 4000
0x400A 8000
0x400A C000
0x400B 0000
0x400B 4000
0x400B 8000
0x400B C000
0x400C 0000
0x400F C000
0x4010 0000
SSP0
DAC(1)
timer 2
timer 3
UART2
UART3
reserved
I2S(1)
I2C2
1 - 0 reserved
2
3
4
5
6
7
8
9
10
reserved
repetitive interrupt timer
11
12
reserved
motor control PWM
30 - 16 reserved
13
14
15
31 system control
QEI
LPC1769/68/67/66/65/64/63LPC1769_68_67_66_65_64_63 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet Rev. 9.5 — 24 June 2014 24 of 89
NXP Semiconductors LPC1769/68/67/66/65/64/63
32-bit ARM Cortex-M3 microcontroller
8.7 Nested Vectored Interrupt Controller (NVIC)
The NVIC is an integral part of the Cortex-M3. The tight coupling to the CPU allows for low
interrupt latency and efficient processing of late arriving interrupts.
8.7.1 Features
• Controls system exceptions and peripheral interrupts
• In the LPC17xx, the NVIC supports 33 vectored interrupts
• 32 programmable interrupt priority levels, with hardware priority level masking
• Relocatable vector table
• Non-Maskable Interrupt (NMI)
• Software interrupt generation
8.7.2 Interrupt sources
Each peripheral device has one interrupt line connected to the NVIC but may have several
interrupt flags. Individual interrupt flags may also represent more than one interrupt
source.
Any pin on Port 0 and Port 2 (total of 42 pins) regardless of the selected function, can be
programmed to generate an interrupt on a rising edge, a falling edge, or both.
8.8 Pin connect block
The pin connect block allows selected pins of the microcontroller to have more than one
function. Configuration registers control the multiplexers to allow connection between the
pin and the on-chip peripherals.
Peripherals should be connected to the appropriate pins prior to being activated and prior
to any related interrupt(s) being enabled. Activity of any enabled peripheral function that is
not mapped to a related pin should be considered undefined.
Most pins can also be configured as open-drain outputs or to have a pull-up, pull-down, or
no resistor enabled.
8.9 General purpose DMA controller
The GPDMA is an AMBA AHB compliant peripheral allowing selected peripherals to have
DMA support.
The GPDMA enables peripheral-to-memory, memory-to-peripheral,
peripheral-to-peripheral, and memory-to-memory transactions. The source and
destination areas can each be either a memory region or a peripheral, and can be
accessed through the AHB master. The GPDMA controller allows data transfers between
the USB and Ethernet controllers and the various on-chip SRAM areas. The supported
APB peripherals are SSP0/1, all UARTs, the I2S-bus interface, the ADC, and the DAC.
Two match signals for each timer can be used to trigger DMA transfers.
Remark: The Ethernet controller is available on parts LPC1769/68/67/66/64. The USB
controller is available on parts LPC1769/68/66/65/64. The I2S-bus interface is available on
parts LPC1769/68/67/66/65. The DAC is available on parts LPC1769/68/67/66/65/63.LPC1769_68_67_66_65_64_63 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet Rev. 9.5 — 24 June 2014 25 of 89
NXP Semiconductors LPC1769/68/67/66/65/64/63
32-bit ARM Cortex-M3 microcontroller
8.9.1 Features
• Eight DMA channels. Each channel can support an unidirectional transfer.
• 16 DMA request lines.
• Single DMA and burst DMA request signals. Each peripheral connected to the DMA
Controller can assert either a burst DMA request or a single DMA request. The DMA
burst size is set by programming the DMA Controller.
• Memory-to-memory, memory-to-peripheral, peripheral-to-memory, and
peripheral-to-peripheral transfers are supported.
• Scatter or gather DMA is supported through the use of linked lists. This means that
the source and destination areas do not have to occupy contiguous areas of memory.
• Hardware DMA channel priority.
• AHB slave DMA programming interface. The DMA Controller is programmed by
writing to the DMA control registers over the AHB slave interface.
• One AHB bus master for transferring data. The interface transfers data when a DMA
request goes active.
• 32-bit AHB master bus width.
• Incrementing or non-incrementing addressing for source and destination.
• Programmable DMA burst size. The DMA burst size can be programmed to more
efficiently transfer data.
• Internal four-word FIFO per channel.
• Supports 8, 16, and 32-bit wide transactions.
• Big-endian and little-endian support. The DMA Controller defaults to little-endian
mode on reset.
• An interrupt to the processor can be generated on a DMA completion or when a DMA
error has occurred.
• Raw interrupt status. The DMA error and DMA count raw interrupt status can be read
prior to masking.
8.10 Fast general purpose parallel I/O
Device pins that are not connected to a specific peripheral function are controlled by the
GPIO registers. Pins may be dynamically configured as inputs or outputs. Separate
registers allow setting or clearing any number of outputs simultaneously. The value of the
output register may be read back as well as the current state of the port pins.
LPC17xx use accelerated GPIO functions:
• GPIO registers are accessed through the AHB multilayer bus so that the fastest
possible I/O timing can be achieved.
• Mask registers allow treating sets of port bits as a group, leaving other bits
unchanged.
• All GPIO registers are byte and half-word addressable.
• Entire port value can be written in one instruction.
• Support for Cortex-M3 bit banding.
• Support for use with the GPDMA controller.LPC1769_68_67_66_65_64_63 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet Rev. 9.5 — 24 June 2014 26 of 89
NXP Semiconductors LPC1769/68/67/66/65/64/63
32-bit ARM Cortex-M3 microcontroller
Additionally, any pin on Port 0 and Port 2 (total of 42 pins) providing a digital function can
be programmed to generate an interrupt on a rising edge, a falling edge, or both. The
edge detection is asynchronous, so it may operate when clocks are not present such as
during Power-down mode. Each enabled interrupt can be used to wake up the chip from
Power-down mode.
8.10.1 Features
• Bit level set and clear registers allow a single instruction to set or clear any number of
bits in one port.
• Direction control of individual bits.
• All I/O default to inputs after reset.
• Pull-up/pull-down resistor configuration and open-drain configuration can be
programmed through the pin connect block for each GPIO pin.
8.11 Ethernet
Remark: The Ethernet controller is available on parts LPC1769/68/67/66/64. The
Ethernet block supports bus clock rates of up to 100 MHz (LPC1768/67/66/64) or 120
MHz (LPC1769). See Table 2.
The Ethernet block contains a full featured 10 Mbit/s or 100 Mbit/s Ethernet MAC
designed to provide optimized performance through the use of DMA hardware
acceleration. Features include a generous suite of control registers, half or full duplex
operation, flow control, control frames, hardware acceleration for transmit retry, receive
packet filtering and wake-up on LAN activity. Automatic frame transmission and reception
with scatter-gather DMA off-loads many operations from the CPU.
The Ethernet block and the CPU share the ARM Cortex-M3 D-code and system bus
through the AHB-multilayer matrix to access the various on-chip SRAM blocks for
Ethernet data, control, and status information.
The Ethernet block interfaces between an off-chip Ethernet PHY using the Reduced MII
(RMII) protocol and the on-chip Media Independent Interface Management (MIIM) serial
bus.
8.11.1 Features
• Ethernet standards support:
– Supports 10 Mbit/s or 100 Mbit/s PHY devices including 10 Base-T, 100 Base-TX,
100 Base-FX, and 100 Base-T4.
– Fully compliant with IEEE standard 802.3.
– Fully compliant with 802.3x full duplex flow control and half duplex back pressure.
– Flexible transmit and receive frame options.
– Virtual Local Area Network (VLAN) frame support.
• Memory management:
– Independent transmit and receive buffers memory mapped to shared SRAM.
– DMA managers with scatter/gather DMA and arrays of frame descriptors.
– Memory traffic optimized by buffering and pre-fetching.LPC1769_68_67_66_65_64_63 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet Rev. 9.5 — 24 June 2014 27 of 89
NXP Semiconductors LPC1769/68/67/66/65/64/63
32-bit ARM Cortex-M3 microcontroller
• Enhanced Ethernet features:
– Receive filtering.
– Multicast and broadcast frame support for both transmit and receive.
– Optional automatic Frame Check Sequence (FCS) insertion with Cyclic
Redundancy Check (CRC) for transmit.
– Selectable automatic transmit frame padding.
– Over-length frame support for both transmit and receive allows any length frames.
– Promiscuous receive mode.
– Automatic collision back-off and frame retransmission.
– Includes power management by clock switching.
– Wake-on-LAN power management support allows system wake-up: using the
receive filters or a magic frame detection filter.
• Physical interface:
– Attachment of external PHY chip through standard RMII interface.
– PHY register access is available via the MIIM interface.
8.12 USB interface
Remark: The USB controller is available as device/Host/OTG controller on parts
LPC1769/68/66/65 and as device-only controller on part LPC1764.
The Universal Serial Bus (USB) is a 4-wire bus that supports communication between a
host and one or more (up to 127) peripherals. The host controller allocates the USB
bandwidth to attached devices through a token-based protocol. The bus supports hot
plugging and dynamic configuration of the devices. All transactions are initiated by the
host controller.
The USB interface includes a device, Host, and OTG controller with on-chip PHY for
device and Host functions. The OTG switching protocol is supported through the use of an
external controller. Details on typical USB interfacing solutions can be found in
Section 15.1.
8.12.1 USB device controller
The device controller enables 12 Mbit/s data exchange with a USB Host controller. It
consists of a register interface, serial interface engine, endpoint buffer memory, and a
DMA controller. The serial interface engine decodes the USB data stream and writes data
to the appropriate endpoint buffer. The status of a completed USB transfer or error
condition is indicated via status registers. An interrupt is also generated if enabled. When
enabled, the DMA controller transfers data between the endpoint buffer and the on-chip
SRAM.
8.12.1.1 Features
• Fully compliant with USB 2.0 specification (full speed).
• Supports 32 physical (16 logical) endpoints with a 4 kB endpoint buffer RAM.
• Supports Control, Bulk, Interrupt and Isochronous endpoints.
• Scalable realization of endpoints at run time.LPC1769_68_67_66_65_64_63 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet Rev. 9.5 — 24 June 2014 28 of 89
NXP Semiconductors LPC1769/68/67/66/65/64/63
32-bit ARM Cortex-M3 microcontroller
• Endpoint Maximum packet size selection (up to USB maximum specification) by
software at run time.
• Supports SoftConnect and GoodLink features.
• While USB is in the Suspend mode, the part can enter one of the reduced power
modes and wake up on USB activity.
• Supports DMA transfers with all on-chip SRAM blocks on all non-control endpoints.
• Allows dynamic switching between CPU-controlled slave and DMA modes.
• Double buffer implementation for Bulk and Isochronous endpoints.
8.12.2 USB host controller
The host controller enables full- and low-speed data exchange with USB devices attached
to the bus. It consists of a register interface, a serial interface engine, and a DMA
controller. The register interface complies with the OHCI specification.
8.12.2.1 Features
• OHCI compliant.
• One downstream port.
• Supports port power switching.
8.12.3 USB OTG controller
USB OTG is a supplement to the USB 2.0 specification that augments the capability of
existing mobile devices and USB peripherals by adding host functionality for connection to
USB peripherals.
The OTG Controller integrates the host controller, device controller, and a master-only
I
2C-bus interface to implement OTG dual-role device functionality. The dedicated I2C-bus
interface controls an external OTG transceiver.
8.12.3.1 Features
• Fully compliant with On-The-Go supplement to the USB 2.0 Specification, Revision
1.0a.
• Hardware support for Host Negotiation Protocol (HNP).
• Includes a programmable timer required for HNP and Session Request Protocol
(SRP).
• Supports any OTG transceiver compliant with the OTG Transceiver Specification
(CEA-2011), Rev. 1.0.
8.13 CAN controller and acceptance filters
Remark: The CAN controllers are available on parts LPC1769/68/66/65/64. See Table 2.
The Controller Area Network (CAN) is a serial communications protocol which efficiently
supports distributed real-time control with a very high level of security. Its domain of
application ranges from high-speed networks to low cost multiplex wiring.
The CAN block is intended to support multiple CAN buses simultaneously, allowing the
device to be used as a gateway, switch, or router among a number of CAN buses in
industrial or automotive applications.LPC1769_68_67_66_65_64_63 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet Rev. 9.5 — 24 June 2014 29 of 89
NXP Semiconductors LPC1769/68/67/66/65/64/63
32-bit ARM Cortex-M3 microcontroller
8.13.1 Features
• Two CAN controllers and buses.
• Data rates to 1 Mbit/s on each bus.
• 32-bit register and RAM access.
• Compatible with CAN specification 2.0B, ISO 11898-1.
• Global Acceptance Filter recognizes standard (11-bit) and extended-frame (29-bit)
receive identifiers for all CAN buses.
• Acceptance Filter can provide FullCAN-style automatic reception for selected
Standard Identifiers.
• FullCAN messages can generate interrupts.
8.14 12-bit ADC
The LPC17xx contain a single 12-bit successive approximation ADC with eight channels
and DMA support.
8.14.1 Features
• 12-bit successive approximation ADC.
• Input multiplexing among 8 pins.
• Power-down mode.
• Measurement range VREFN to VREFP.
• 12-bit conversion rate: 200 kHz.
• Individual channels can be selected for conversion.
• Burst conversion mode for single or multiple inputs.
• Optional conversion on transition of input pin or Timer Match signal.
• Individual result registers for each ADC channel to reduce interrupt overhead.
• DMA support.
8.15 10-bit DAC
The DAC allows to generate a variable analog output. The maximum output value of the
DAC is VREFP.
Remark: The DAC is available on parts LPC1769/68/67/66/65/63. See Table 2.
8.15.1 Features
• 10-bit DAC
• Resistor string architecture
• Buffered output
• Power-down mode
• Selectable output drive
• Dedicated conversion timer
• DMA supportLPC1769_68_67_66_65_64_63 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet Rev. 9.5 — 24 June 2014 30 of 89
NXP Semiconductors LPC1769/68/67/66/65/64/63
32-bit ARM Cortex-M3 microcontroller
8.16 UARTs
The LPC17xx each contain four UARTs. In addition to standard transmit and receive data
lines, UART1 also provides a full modem control handshake interface and support for
RS-485/9-bit mode allowing both software address detection and automatic address
detection using 9-bit mode.
The UARTs include a fractional baud rate generator. Standard baud rates such as
115200 Bd can be achieved with any crystal frequency above 2 MHz.
8.16.1 Features
• Maximum UART data bit rate of 6.25 Mbit/s.
• 16 B Receive and Transmit FIFOs.
• Register locations conform to 16C550 industry standard.
• Receiver FIFO trigger points at 1 B, 4 B, 8 B, and 14 B.
• Built-in fractional baud rate generator covering wide range of baud rates without a
need for external crystals of particular values.
• Auto baud capabilities and FIFO control mechanism that enables software flow
control implementation.
• UART1 equipped with standard modem interface signals. This module also provides
full support for hardware flow control (auto-CTS/RTS).
• Support for RS-485/9-bit/EIA-485 mode (UART1).
• UART3 includes an IrDA mode to support infrared communication.
• All UARTs have DMA support.
8.17 SPI serial I/O controller
The LPC17xx contain one SPI controller. SPI is a full duplex serial interface designed to
handle multiple masters and slaves connected to a given bus. Only a single master and a
single slave can communicate on the interface during a given data transfer. During a data
transfer the master always sends 8 bits to 16 bits of data to the slave, and the slave
always sends 8 bits to 16 bits of data to the master.
8.17.1 Features
• Maximum SPI data bit rate of 12.5 Mbit/s
• Compliant with SPI specification
• Synchronous, serial, full duplex communication
• Combined SPI master and slave
• Maximum data bit rate of one eighth of the input clock rate
• 8 bits to 16 bits per transfer
8.18 SSP serial I/O controller
The LPC17xx contain two SSP controllers. The SSP controller is capable of operation on
a SPI, 4-wire SSI, or Microwire bus. It can interact with multiple masters and slaves on the
bus. Only a single master and a single slave can communicate on the bus during a given LPC1769_68_67_66_65_64_63 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet Rev. 9.5 — 24 June 2014 31 of 89
NXP Semiconductors LPC1769/68/67/66/65/64/63
32-bit ARM Cortex-M3 microcontroller
data transfer. The SSP supports full duplex transfers, with frames of 4 bits to 16 bits of
data flowing from the master to the slave and from the slave to the master. In practice,
often only one of these data flows carries meaningful data.
8.18.1 Features
• Maximum SSP speed of 33 Mbit/s (master) or 8 Mbit/s (slave)
• Compatible with Motorola SPI, 4-wire Texas Instruments SSI, and National
Semiconductor Microwire buses
• Synchronous serial communication
• Master or slave operation
• 8-frame FIFOs for both transmit and receive
• 4-bit to 16-bit frame
• DMA transfers supported by GPDMA
8.19 I2C-bus serial I/O controllers
The LPC17xx each contain three I2C-bus controllers.
The I2C-bus is bidirectional for inter-IC control using only two wires: a Serial Clock line
(SCL) and a Serial DAta line (SDA). Each device is recognized by a unique address and
can operate as either a receiver-only device (e.g., an LCD driver) or a transmitter with the
capability to both receive and send information (such as memory). Transmitters and/or
receivers can operate in either master or slave mode, depending on whether the chip has
to initiate a data transfer or is only addressed. The I2C is a multi-master bus and can be
controlled by more than one bus master connected to it.
8.19.1 Features
• I
2C0 is a standard I2C compliant bus interface with open-drain pins. I2C0 also
supports Fast mode plus with bit rates up to 1 Mbit/s.
• I
2C1 and I2C2 use standard I/O pins with bit rates of up to 400 kbit/s (Fast I2C-bus).
• Easy to configure as master, slave, or master/slave.
• Programmable clocks allow versatile rate control.
• Bidirectional data transfer between masters and slaves.
• Multi-master bus (no central master).
• Arbitration between simultaneously transmitting masters without corruption of serial
data on the bus.
• Serial clock synchronization allows devices with different bit rates to communicate via
one serial bus.
• Serial clock synchronization can be used as a handshake mechanism to suspend and
resume serial transfer.
• The I2C-bus can be used for test and diagnostic purposes.
• All I2C-bus controllers support multiple address recognition and a bus monitor mode.LPC1769_68_67_66_65_64_63 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet Rev. 9.5 — 24 June 2014 32 of 89
NXP Semiconductors LPC1769/68/67/66/65/64/63
32-bit ARM Cortex-M3 microcontroller
8.20 I2S-bus serial I/O controllers
Remark: The I2S-bus interface is available on parts LPC1769/68/67/66/65/63. See
Table 2.
The I2S-bus provides a standard communication interface for digital audio applications.
The I
2S-bus specification defines a 3-wire serial bus using one data line, one clock line,
and one word select signal. The basic I2S-bus connection has one master, which is
always the master, and one slave. The I2S-bus interface provides a separate transmit and
receive channel, each of which can operate as either a master or a slave.
8.20.1 Features
• The interface has separate input/output channels each of which can operate in master
or slave mode.
• Capable of handling 8-bit, 16-bit, and 32-bit word sizes.
• Mono and stereo audio data supported.
• The sampling frequency can range from 16 kHz to 96 kHz (16, 22.05, 32, 44.1, 48,
96) kHz.
• Support for an audio master clock.
• Configurable word select period in master mode (separately for I2S-bus input and
output).
• Two 8-word FIFO data buffers are provided, one for transmit and one for receive.
• Generates interrupt requests when buffer levels cross a programmable boundary.
• Two DMA requests, controlled by programmable buffer levels. These are connected
to the GPDMA block.
• Controls include reset, stop and mute options separately for I2S-bus input and I2S-bus
output.
8.21 General purpose 32-bit timers/external event counters
The LPC17xx include four 32-bit timer/counters. The timer/counter is designed to count
cycles of the system derived clock or an externally-supplied clock. It can optionally
generate interrupts, generate timed DMA requests, or perform other actions at specified
timer values, based on four match registers. Each timer/counter also includes two capture
inputs to trap the timer value when an input signal transitions, optionally generating an
interrupt.
8.21.1 Features
• A 32-bit timer/counter with a programmable 32-bit prescaler.
• Counter or timer operation.
• Two 32-bit capture channels per timer, that can take a snapshot of the timer value
when an input signal transitions. A capture event may also generate an interrupt.
• Four 32-bit match registers that allow:
– Continuous operation with optional interrupt generation on match.
– Stop timer on match with optional interrupt generation.
– Reset timer on match with optional interrupt generation.LPC1769_68_67_66_65_64_63 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet Rev. 9.5 — 24 June 2014 33 of 89
NXP Semiconductors LPC1769/68/67/66/65/64/63
32-bit ARM Cortex-M3 microcontroller
• Up to four external outputs corresponding to match registers, with the following
capabilities:
– Set LOW on match.
– Set HIGH on match.
– Toggle on match.
– Do nothing on match.
• Up to two match registers can be used to generate timed DMA requests.
8.22 Pulse width modulator
The PWM is based on the standard Timer block and inherits all of its features, although
only the PWM function is pinned out on the LPC17xx. The Timer is designed to count
cycles of the system derived clock and optionally switch pins, generate interrupts or
perform other actions when specified timer values occur, based on seven match registers.
The PWM function is in addition to these features, and is based on match register events.
The ability to separately control rising and falling edge locations allows the PWM to be
used for more applications. For instance, multi-phase motor control typically requires
three non-overlapping PWM outputs with individual control of all three pulse widths and
positions.
Two match registers can be used to provide a single edge controlled PWM output. One
match register (PWMMR0) controls the PWM cycle rate, by resetting the count upon
match. The other match register controls the PWM edge position. Additional single edge
controlled PWM outputs require only one match register each, since the repetition rate is
the same for all PWM outputs. Multiple single edge controlled PWM outputs will all have a
rising edge at the beginning of each PWM cycle, when an PWMMR0 match occurs.
Three match registers can be used to provide a PWM output with both edges controlled.
Again, the PWMMR0 match register controls the PWM cycle rate. The other match
registers control the two PWM edge positions. Additional double edge controlled PWM
outputs require only two match registers each, since the repetition rate is the same for all
PWM outputs.
With double edge controlled PWM outputs, specific match registers control the rising and
falling edge of the output. This allows both positive going PWM pulses (when the rising
edge occurs prior to the falling edge), and negative going PWM pulses (when the falling
edge occurs prior to the rising edge).
8.22.1 Features
• One PWM block with Counter or Timer operation (may use the peripheral clock or one
of the capture inputs as the clock source).
• Seven match registers allow up to 6 single edge controlled or 3 double edge
controlled PWM outputs, or a mix of both types. The match registers also allow:
– Continuous operation with optional interrupt generation on match.
– Stop timer on match with optional interrupt generation.
– Reset timer on match with optional interrupt generation.LPC1769_68_67_66_65_64_63 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet Rev. 9.5 — 24 June 2014 34 of 89
NXP Semiconductors LPC1769/68/67/66/65/64/63
32-bit ARM Cortex-M3 microcontroller
• Supports single edge controlled and/or double edge controlled PWM outputs. Single
edge controlled PWM outputs all go high at the beginning of each cycle unless the
output is a constant low. Double edge controlled PWM outputs can have either edge
occur at any position within a cycle. This allows for both positive going and negative
going pulses.
• Pulse period and width can be any number of timer counts. This allows complete
flexibility in the trade-off between resolution and repetition rate. All PWM outputs will
occur at the same repetition rate.
• Double edge controlled PWM outputs can be programmed to be either positive going
or negative going pulses.
• Match register updates are synchronized with pulse outputs to prevent generation of
erroneous pulses. Software must ‘release’ new match values before they can become
effective.
• May be used as a standard 32-bit timer/counter with a programmable 32-bit prescaler
if the PWM mode is not enabled.
8.23 Motor control PWM
The motor control PWM is a specialized PWM supporting 3-phase motors and other
combinations. Feedback inputs are provided to automatically sense rotor position and use
that information to ramp speed up or down. An abort input is also provided that causes the
PWM to immediately release all motor drive outputs. At the same time, the motor control
PWM is highly configurable for other generalized timing, counting, capture, and compare
applications.
8.24 Quadrature Encoder Interface (QEI)
A quadrature encoder, also known as a 2-channel incremental encoder, converts angular
displacement into two pulse signals. By monitoring both the number of pulses and the
relative phase of the two signals, the user can track the position, direction of rotation, and
velocity. In addition, a third channel, or index signal, can be used to reset the position
counter. The quadrature encoder interface decodes the digital pulses from a quadrature
encoder wheel to integrate position over time and determine direction of rotation. In
addition, the QEI can capture the velocity of the encoder wheel.
8.24.1 Features
• Tracks encoder position.
• Increments/decrements depending on direction.
• Programmable for 2 or 4 position counting.
• Velocity capture using built-in timer.
• Velocity compare function with “less than” interrupt.
• Uses 32-bit registers for position and velocity.
• Three position compare registers with interrupts.
• Index counter for revolution counting.
• Index compare register with interrupts.
• Can combine index and position interrupts to produce an interrupt for whole and
partial revolution displacement.LPC1769_68_67_66_65_64_63 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet Rev. 9.5 — 24 June 2014 35 of 89
NXP Semiconductors LPC1769/68/67/66/65/64/63
32-bit ARM Cortex-M3 microcontroller
• Digital filter with programmable delays for encoder input signals.
• Can accept decoded signal inputs (clk and direction).
• Connected to APB.
8.25 Repetitive Interrupt (RI) timer
The repetitive interrupt timer provides a free-running 32-bit counter which is compared to
a selectable value, generating an interrupt when a match occurs. Any bits of the
timer/compare can be masked such that they do not contribute to the match detection.
The repetitive interrupt timer can be used to create an interrupt that repeats at
predetermined intervals.
8.25.1 Features
• 32-bit counter running from PCLK. Counter can be free-running or be reset by a
generated interrupt.
• 32-bit compare value.
• 32-bit compare mask. An interrupt is generated when the counter value equals the
compare value, after masking. This allows for combinations not possible with a simple
compare.
8.26 ARM Cortex-M3 system tick timer
The ARM Cortex-M3 includes a system tick timer (SYSTICK) that is intended to generate
a dedicated SYSTICK exception at a 10 ms interval. In the LPC17xx, this timer can be
clocked from the internal AHB clock or from a device pin.
8.27 Watchdog timer
The purpose of the watchdog is to reset the microcontroller within a reasonable amount of
time if it enters an erroneous state. When enabled, the watchdog will generate a system
reset if the user program fails to ‘feed’ (or reload) the watchdog within a predetermined
amount of time.
8.27.1 Features
• Internally resets chip if not periodically reloaded.
• Debug mode.
• Enabled by software but requires a hardware reset or a watchdog reset/interrupt to be
disabled.
• Incorrect/Incomplete feed sequence causes reset/interrupt if enabled.
• Flag to indicate watchdog reset.
• Programmable 32-bit timer with internal prescaler.
• Selectable time period from (Tcy(WDCLK) 256 4) to (Tcy(WDCLK) 232 4) in
multiples of Tcy(WDCLK) 4.
• The Watchdog Clock (WDCLK) source can be selected from the Internal RC (IRC)
oscillator, the RTC oscillator, or the APB peripheral clock. This gives a wide range of
potential timing choices of Watchdog operation under different power reduction LPC1769_68_67_66_65_64_63 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet Rev. 9.5 — 24 June 2014 36 of 89
NXP Semiconductors LPC1769/68/67/66/65/64/63
32-bit ARM Cortex-M3 microcontroller
conditions. It also provides the ability to run the WDT from an entirely internal source
that is not dependent on an external crystal and its associated components and wiring
for increased reliability.
• Includes lock/safe feature.
8.28 RTC and backup registers
The RTC is a set of counters for measuring time when system power is on, and optionally
when it is off. The RTC on the LPC17xx is designed to have extremely low power
consumption, i.e. less than 1 A. The RTC will typically run from the main chip power
supply, conserving battery power while the rest of the device is powered up. When
operating from a battery, the RTC will continue working down to 2.1 V. Battery power can
be provided from a standard 3 V Lithium button cell.
An ultra-low power 32 kHz oscillator will provide a 1 Hz clock to the time counting portion
of the RTC, moving most of the power consumption out of the time counting function.
The RTC includes a calibration mechanism to allow fine-tuning the count rate in a way
that will provide less than 1 second per day error when operated at a constant voltage and
temperature. A clock output function (see Section 8.29.4) makes measuring the oscillator
rate easy and accurate.
The RTC contains a small set of backup registers (20 bytes) for holding data while the
main part of the LPC17xx is powered off.
The RTC includes an alarm function that can wake up the LPC17xx from all reduced
power modes with a time resolution of 1 s.
8.28.1 Features
• Measures the passage of time to maintain a calendar and clock.
• Ultra low power design to support battery powered systems.
• Provides Seconds, Minutes, Hours, Day of Month, Month, Year, Day of Week, and
Day of Year.
• Dedicated power supply pin can be connected to a battery or to the main 3.3 V.
• Periodic interrupts can be generated from increments of any field of the time registers.
• Backup registers (20 bytes) powered by VBAT.
• RTC power supply is isolated from the rest of the chip.
8.29 Clocking and power control
8.29.1 Crystal oscillators
The LPC17xx include three independent oscillators. These are the main oscillator, the IRC
oscillator, and the RTC oscillator. Each oscillator can be used for more than one purpose
as required in a particular application. Any of the three clock sources can be chosen by
software to drive the main PLL and ultimately the CPU.
Following reset, the LPC17xx will operate from the Internal RC oscillator until switched by
software. This allows systems to operate without any external crystal and the bootloader
code to operate at a known frequency. LPC1769_68_67_66_65_64_63 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet Rev. 9.5 — 24 June 2014 37 of 89
NXP Semiconductors LPC1769/68/67/66/65/64/63
32-bit ARM Cortex-M3 microcontroller
See Figure 6 for an overview of the LPC17xx clock generation.
8.29.1.1 Internal RC oscillator
The IRC may be used as the clock source for the WDT, and/or as the clock that drives the
PLL and subsequently the CPU. The nominal IRC frequency is 4 MHz. The IRC is
trimmed to 1 % accuracy over the entire voltage and temperature range.
Upon power-up or any chip reset, the LPC17xx use the IRC as the clock source. Software
may later switch to one of the other available clock sources.
8.29.1.2 Main oscillator
The main oscillator can be used as the clock source for the CPU, with or without using the
PLL. The main oscillator also provides the clock source for the dedicated USB PLL.
The main oscillator operates at frequencies of 1 MHz to 25 MHz. This frequency can be
boosted to a higher frequency, up to the maximum CPU operating frequency, by the main
PLL. The clock selected as the PLL input is PLLCLKIN. The ARM processor clock
frequency is referred to as CCLK elsewhere in this document. The frequencies of
PLLCLKIN and CCLK are the same value unless the PLL is active and connected. The
clock frequency for each peripheral can be selected individually and is referred to as
PCLK. Refer to Section 8.29.2 for additional information.
8.29.1.3 RTC oscillator
The RTC oscillator can be used as the clock source for the RTC block, the main PLL,
and/or the CPU.
Fig 6. LPC17xx clocking generation block diagram
MAIN
OSCILLATOR
INTERNAL
RC
OSCILLATOR
RTC
OSCILLATOR
MAIN PLL
WATCHDOG
TIMER
REAL-TIME
CLOCK
CPU
CLOCK
DIVIDER
PERIPHERAL
CLOCK
GENERATOR
USB BLOCK
ARM
CORTEX-M3
ETHERNET
BLOCK
DMA
GPIO
NVIC
USB
CLOCK
DIVIDER
system
clock
select
(CLKSRCSEL)
USB clock config
(USBCLKCFG)
CPU clock config
(CCLKCFG)
pllclk
CCLK/8
CCLK/6
CCLK/4
CCLK/2
CCLK
pclkWDT
rtclk = 1Hz
usbclk
(48 MHz)
cclk
USB PLL
USB PLL enable
main PLL enable
32 kHz
APB peripherals
LPC17xx
002aad947LPC1769_68_67_66_65_64_63 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet Rev. 9.5 — 24 June 2014 38 of 89
NXP Semiconductors LPC1769/68/67/66/65/64/63
32-bit ARM Cortex-M3 microcontroller
8.29.2 Main PLL (PLL0)
The PLL0 accepts an input clock frequency in the range of 32 kHz to 25 MHz. The input
frequency is multiplied up to a high frequency, then divided down to provide the actual
clock used by the CPU and/or the USB block.
The PLL0 input, in the range of 32 kHz to 25 MHz, may initially be divided down by a
value ‘N’, which may be in the range of 1 to 256. This input division provides a wide range
of output frequencies from the same input frequency.
Following the PLL0 input divider is the PLL0 multiplier. This can multiply the input divider
output through the use of a Current Controlled Oscillator (CCO) by a value ‘M’, in the
range of 1 through 32768. The resulting frequency must be in the range of 275 MHz to
550 MHz. The multiplier works by dividing the CCO output by the value of M, then using a
phase-frequency detector to compare the divided CCO output to the multiplier input. The
error value is used to adjust the CCO frequency.
The PLL0 is turned off and bypassed following a chip Reset and by entering Power-down
mode. PLL0 is enabled by software only. The program must configure and activate the
PLL0, wait for the PLL0 to lock, and then connect to the PLL0 as a clock source.
8.29.3 USB PLL (PLL1)
The LPC17xx contain a second, dedicated USB PLL1 to provide clocking for the USB
interface.
The PLL1 receives its clock input from the main oscillator only and provides a fixed
48 MHz clock to the USB block only. The PLL1 is disabled and powered off on reset. If the
PLL1 is left disabled, the USB clock will be supplied by the 48 MHz clock from the main
PLL0.
The PLL1 accepts an input clock frequency in the range of 10 MHz to 25 MHz only. The
input frequency is multiplied up the range of 48 MHz for the USB clock using a Current
Controlled Oscillators (CCO). It is insured that the PLL1 output has a 50 % duty cycle.
8.29.4 RTC clock output
The LPC17xx feature a clock output function intended for synchronizing with external
devices and for use during system development to allow checking the internal clocks
CCLK, IRC clock, main crystal, RTC clock, and USB clock in the outside world. The RTC
clock output allows tuning the RTC frequency without probing the pin, which would distort
the results.
8.29.5 Wake-up timer
The LPC17xx begin operation at power-up and when awakened from Power-down mode
by using the 4 MHz IRC oscillator as the clock source. This allows chip operation to
resume quickly. If the main oscillator or the PLL is needed by the application, software will
need to enable these features and wait for them to stabilize before they are used as a
clock source.
When the main oscillator is initially activated, the wake-up timer allows software to ensure
that the main oscillator is fully functional before the processor uses it as a clock source
and starts to execute instructions. This is important at power on, all types of Reset, and LPC1769_68_67_66_65_64_63 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet Rev. 9.5 — 24 June 2014 39 of 89
NXP Semiconductors LPC1769/68/67/66/65/64/63
32-bit ARM Cortex-M3 microcontroller
whenever any of the aforementioned functions are turned off for any reason. Since the
oscillator and other functions are turned off during Power-down mode, any wake-up of the
processor from Power-down mode makes use of the wake-up timer.
The Wake-up Timer monitors the crystal oscillator to check whether it is safe to begin
code execution. When power is applied to the chip, or when some event caused the chip
to exit Power-down mode, some time is required for the oscillator to produce a signal of
sufficient amplitude to drive the clock logic. The amount of time depends on many factors,
including the rate of VDD(3V3) ramp (in the case of power on), the type of crystal and its
electrical characteristics (if a quartz crystal is used), as well as any other external circuitry
(e.g., capacitors), and the characteristics of the oscillator itself under the existing ambient
conditions.
8.29.6 Power control
The LPC17xx support a variety of power control features. There are four special modes of
processor power reduction: Sleep mode, Deep-sleep mode, Power-down mode, and
Deep power-down mode. The CPU clock rate may also be controlled as needed by
changing clock sources, reconfiguring PLL values, and/or altering the CPU clock divider
value. This allows a trade-off of power versus processing speed based on application
requirements. In addition, Peripheral Power Control allows shutting down the clocks to
individual on-chip peripherals, allowing fine tuning of power consumption by eliminating all
dynamic power use in any peripherals that are not required for the application. Each of the
peripherals has its own clock divider which provides even better power control.
Integrated PMU (Power Management Unit) automatically adjust internal regulators to
minimize power consumption during Sleep, Deep sleep, Power-down, and Deep
power-down modes.
The LPC17xx also implement a separate power domain to allow turning off power to the
bulk of the device while maintaining operation of the RTC and a small set of registers for
storing data during any of the power-down modes.
8.29.6.1 Sleep mode
When Sleep mode is entered, the clock to the core is stopped. Resumption from the Sleep
mode does not need any special sequence but re-enabling the clock to the ARM core.
In Sleep mode, execution of instructions is suspended until either a Reset or interrupt
occurs. Peripheral functions continue operation during Sleep mode and may generate
interrupts to cause the processor to resume execution. Sleep mode eliminates dynamic
power used by the processor itself, memory systems and related controllers, and internal
buses.
8.29.6.2 Deep-sleep mode
In Deep-sleep mode, the oscillator is shut down and the chip receives no internal clocks.
The processor state and registers, peripheral registers, and internal SRAM values are
preserved throughout Deep-sleep mode and the logic levels of chip pins remain static.
The output of the IRC is disabled but the IRC is not powered down for a fast wake-up later.
The RTC oscillator is not stopped because the RTC interrupts may be used as the
wake-up source. The PLL is automatically turned off and disconnected. The CCLK and
USB clock dividers automatically get reset to zero.LPC1769_68_67_66_65_64_63 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet Rev. 9.5 — 24 June 2014 40 of 89
NXP Semiconductors LPC1769/68/67/66/65/64/63
32-bit ARM Cortex-M3 microcontroller
The Deep-sleep mode can be terminated and normal operation resumed by either a
Reset or certain specific interrupts that are able to function without clocks. Since all
dynamic operation of the chip is suspended, Deep-sleep mode reduces chip power
consumption to a very low value. Power to the flash memory is left on in Deep-sleep
mode, allowing a very quick wake-up.
On wake-up from Deep-sleep mode, the code execution and peripherals activities will
resume after 4 cycles expire if the IRC was used before entering Deep-sleep mode. If the
main external oscillator was used, the code execution will resume when 4096 cycles
expire. PLL and clock dividers need to be reconfigured accordingly.
8.29.6.3 Power-down mode
Power-down mode does everything that Deep-sleep mode does, but also turns off the
power to the IRC oscillator and the flash memory. This saves more power but requires
waiting for resumption of flash operation before execution of code or data access in the
flash memory can be accomplished.
On the wake-up of Power-down mode, if the IRC was used before entering Power-down
mode, it will take IRC 60 s to start-up. After this 4 IRC cycles will expire before the code
execution can then be resumed if the code was running from SRAM. In the meantime, the
flash wake-up timer then counts 4 MHz IRC clock cycles to make the 100 s flash start-up
time. When it times out, access to the flash will be allowed. Users need to reconfigure the
PLL and clock dividers accordingly.
8.29.6.4 Deep power-down mode
The Deep power-down mode can only be entered from the RTC block. In Deep
power-down mode, power is shut off to the entire chip with the exception of the RTC
module and the RESET pin.
The LPC17xx can wake up from Deep power-down mode via the RESET pin or an alarm
match event of the RTC.
8.29.6.5 Wake-up interrupt controller
The Wake-up Interrupt Controller (WIC) allows the CPU to automatically wake up from
any enabled priority interrupt that can occur while the clocks are stopped in Deep sleep,
Power-down, and Deep power-down modes.
The WIC works in connection with the Nested Vectored Interrupt Controller (NVIC). When
the CPU enters Deep sleep, Power-down, or Deep power-down mode, the NVIC sends a
mask of the current interrupt situation to the WIC.This mask includes all of the interrupts
that are both enabled and of sufficient priority to be serviced immediately. With this
information, the WIC simply notices when one of the interrupts has occurred and then it
wakes up the CPU.
The WIC eliminates the need to periodically wake up the CPU and poll the interrupts
resulting in additional power savings.
8.29.7 Peripheral power control
A Power Control for Peripherals feature allows individual peripherals to be turned off if
they are not needed in the application, resulting in additional power savings. LPC1769_68_67_66_65_64_63 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet Rev. 9.5 — 24 June 2014 41 of 89
NXP Semiconductors LPC1769/68/67/66/65/64/63
32-bit ARM Cortex-M3 microcontroller
8.29.8 Power domains
The LPC17xx provide two independent power domains that allow the bulk of the device to
have power removed while maintaining operation of the RTC and the backup Registers.
On the LPC17xx, I/O pads are powered by the 3.3 V (VDD(3V3)) pins, while the
VDD(REG)(3V3) pin powers the on-chip voltage regulator which in turn provides power to the
CPU and most of the peripherals.
Depending on the LPC17xx application, a design can use two power options to manage
power consumption.
The first option assumes that power consumption is not a concern and the design ties the
VDD(3V3) and VDD(REG)(3V3) pins together. This approach requires only one 3.3 V power
supply for both pads, the CPU, and peripherals. While this solution is simple, it does not
support powering down the I/O pad ring “on the fly” while keeping the CPU and
peripherals alive.
The second option uses two power supplies; a 3.3 V supply for the I/O pads (VDD(3V3)) and
a dedicated 3.3 V supply for the CPU (VDD(REG)(3V3)). Having the on-chip voltage regulator
powered independently from the I/O pad ring enables shutting down of the I/O pad power
supply “on the fly”, while the CPU and peripherals stay active.
The VBAT pin supplies power only to the RTC domain. The RTC requires a minimum of
power to operate, which can be supplied by an external battery. The device core power
(VDD(REG)(3V3)) is used to operate the RTC whenever VDD(REG)(3V3) is present. Therefore,
there is no power drain from the RTC battery when VDD(REG)(3V3) is available. LPC1769_68_67_66_65_64_63 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet Rev. 9.5 — 24 June 2014 42 of 89
NXP Semiconductors LPC1769/68/67/66/65/64/63
32-bit ARM Cortex-M3 microcontroller
8.30 System control
8.30.1 Reset
Reset has four sources on the LPC17xx: the RESET pin, the Watchdog reset, power-on
reset (POR), and the BrownOut Detection (BOD) circuit. The RESET pin is a Schmitt
trigger input pin. Assertion of chip Reset by any source, once the operating voltage attains
a usable level, causes the RSTOUT pin to go LOW and starts the wake-up timer (see
description in Section 8.29.5). The wake-up timer ensures that reset remains asserted
until the external Reset is de-asserted, the oscillator is running, a fixed number of clocks
have passed, and the flash controller has completed its initialization. Once reset is
de-asserted, or, in case of a BOD-triggered reset, once the voltage rises above the BOD
threshold, the RSTOUT pin goes HIGH.
When the internal Reset is removed, the processor begins executing at address 0, which
is initially the Reset vector mapped from the Boot Block. At that point, all of the processor
and peripheral registers have been initialized to predetermined values.
Fig 7. Power distribution
REAL-TIME CLOCK
BACKUP REGISTERS
REGULATOR
32 kHz
OSCILLATOR
RTC POWER DOMAIN
MAIN POWER DOMAIN
002aad978
RTCX1
VBAT
VDD(REG)(3V3)
RTCX2
VDD(3V3)
VSS
to memories,
peripherals,
oscillators,
PLLs
to core
to I/O pads
ADC
DAC
ADC POWER DOMAIN
VDDA
VREFP
VREFN
VSSA
LPC17xx
ULTRA LOW-POWER
REGULATOR
POWER
SELECTORLPC1769_68_67_66_65_64_63 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet Rev. 9.5 — 24 June 2014 43 of 89
NXP Semiconductors LPC1769/68/67/66/65/64/63
32-bit ARM Cortex-M3 microcontroller
8.30.2 Brownout detection
The LPC17xx include 2-stage monitoring of the voltage on the VDD(REG)(3V3) pins. If this
voltage falls below 2.2 V, the BOD asserts an interrupt signal to the Vectored Interrupt
Controller. This signal can be enabled for interrupt in the Interrupt Enable Register in the
NVIC in order to cause a CPU interrupt; if not, software can monitor the signal by reading
a dedicated status register.
The second stage of low-voltage detection asserts reset to inactivate the LPC17xx when
the voltage on the VDD(REG)(3V3) pins falls below 1.85 V. This reset prevents alteration of
the flash as operation of the various elements of the chip would otherwise become
unreliable due to low voltage. The BOD circuit maintains this reset down below 1 V, at
which point the power-on reset circuitry maintains the overall reset.
Both the 2.2 V and 1.85 V thresholds include some hysteresis. In normal operation, this
hysteresis allows the 2.2 V detection to reliably interrupt, or a regularly executed event
loop to sense the condition.
8.30.3 Code security (Code Read Protection - CRP)
This feature of the LPC17xx allows user to enable different levels of security in the system
so that access to the on-chip flash and use of the JTAG and ISP can be restricted. When
needed, CRP is invoked by programming a specific pattern into a dedicated flash location.
IAP commands are not affected by the CRP.
There are three levels of the Code Read Protection.
CRP1 disables access to chip via the JTAG and allows partial flash update (excluding
flash sector 0) using a limited set of the ISP commands. This mode is useful when CRP is
required and flash field updates are needed but all sectors can not be erased.
CRP2 disables access to chip via the JTAG and only allows full flash erase and update
using a reduced set of the ISP commands.
Running an application with level CRP3 selected fully disables any access to chip via the
JTAG pins and the ISP. This mode effectively disables ISP override using P2[10] pin, too.
It is up to the user’s application to provide (if needed) flash update mechanism using IAP
calls or call reinvoke ISP command to enable flash update via UART0.
8.30.4 APB interface
The APB peripherals are split into two separate APB buses in order to distribute the bus
bandwidth and thereby reducing stalls caused by contention between the CPU and the
GPDMA controller.
CAUTION
If level three Code Read Protection (CRP3) is selected, no future factory testing can be
performed on the device.LPC1769_68_67_66_65_64_63 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet Rev. 9.5 — 24 June 2014 44 of 89
NXP Semiconductors LPC1769/68/67/66/65/64/63
32-bit ARM Cortex-M3 microcontroller
8.30.5 AHB multilayer matrix
The LPC17xx use an AHB multilayer matrix. This matrix connects the instruction (I-code)
and data (D-code) CPU buses of the ARM Cortex-M3 to the flash memory, the main
(32 kB) static RAM, and the Boot ROM. The GPDMA can also access all of these
memories. The peripheral DMA controllers, Ethernet, and USB can access all SRAM
blocks. Additionally, the matrix connects the CPU system bus and all of the DMA
controllers to the various peripheral functions.
8.30.6 External interrupt inputs
The LPC17xx include up to 46 edge sensitive interrupt inputs combined with up to four
level sensitive external interrupt inputs as selectable pin functions. The external interrupt
inputs can optionally be used to wake up the processor from Power-down mode.
8.30.7 Memory mapping control
The Cortex-M3 incorporates a mechanism that allows remapping the interrupt vector table
to alternate locations in the memory map. This is controlled via the Vector Table Offset
Register contained in the NVIC.
The vector table may be located anywhere within the bottom 1 GB of Cortex-M3 address
space. The vector table must be located on a 128 word (512 byte) boundary because the
NVIC on the LPC17xx is configured for 128 total interrupts.
8.31 Emulation and debugging
Debug and trace functions are integrated into the ARM Cortex-M3. Serial wire debug and
trace functions are supported in addition to a standard JTAG debug and parallel trace
functions. The ARM Cortex-M3 is configured to support up to eight breakpoints and four
watch points.LPC1769_68_67_66_65_64_63 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet Rev. 9.5 — 24 June 2014 45 of 89
NXP Semiconductors LPC1769/68/67/66/65/64/63
32-bit ARM Cortex-M3 microcontroller
9. Limiting values
[1] The following applies to the limiting values:
a) This product includes circuitry specifically designed for the protection of its internal devices from the damaging effects of excessive
static charge. Nonetheless, it is suggested that conventional precautions be taken to avoid applying greater than the rated
maximum.
b) Parameters are valid over operating temperature range unless otherwise specified. All voltages are with respect to VSS unless
otherwise noted.
c) The limiting values are stress ratings only. Operating the part at these values is not recommended, and proper operation is not
guaranteed. The conditions for functional operation are specified in Table 8.
[2] Maximum/minimum voltage above the maximum operating voltage (see Table 8) and below ground that can be applied for a short time
(< 10 ms) to a device without leading to irrecoverable failure. Failure includes the loss of reliability and shorter lifetime of the device.
[3] See Table 19 for maximum operating voltage.
[4] Including voltage on outputs in 3-state mode.
[5] VDD present or not present. Compliant with the I2C-bus standard. 5.5 V can be applied to this pin when VDD is powered down.
[6] The maximum non-operating storage temperature is different than the temperature for required shelf life which should be determined
based on required shelf lifetime. Please refer to the JEDEC spec (J-STD-033B.1) for further details.
[7] Human body model: equivalent to discharging a 100 pF capacitor through a 1.5 k series resistor.
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).[1]
Symbol Parameter Conditions Min Max Unit
VDD(3V3) supply voltage (3.3 V) external rail [2] 0.5 +4.6 V
VDD(REG)(3V3) regulator supply voltage (3.3 V) [2] 0.5 +4.6 V
VDDA analog 3.3 V pad supply
voltage
[2] 0.5 +4.6 V
Vi(VBAT) input voltage on pin VBAT for the RTC [2] 0.5 +4.6 V
Vi(VREFP) input voltage on pin VREFP [2] 0.5 +4.6 V
VIA analog input voltage on ADC related pins [2][3] 0.5 +5.1 V
VI input voltage 5 V tolerant digital I/O pins;
VDD 2.4 V
[2][4] 0.5 +5.5 VI
VDD = 0 V 0.5 +3.6
5 V tolerant open-drain pins
PIO0_27 and PIO0_28
[2][5] 0.5 +5.5
IDD supply current per supply pin - 100 mA
ISS ground current per ground pin - 100 mA
Ilatch I/O latch-up current (0.5VDD(3V3)) < VI <
(1.5VDD(3V3)); Tj
< 125 C
- 100 mA
Tstg storage temperature [6] 65 +150 C
Tj(max) maximum junction temperature 150 C
Ptot(pack) total power dissipation (per
package)
based on package heat
transfer, not device power
consumption
- 1.5 W
VESD electrostatic discharge voltage human body model; all pins [7] 4000 +4000 VLPC1769_68_67_66_65_64_63 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet Rev. 9.5 — 24 June 2014 46 of 89
NXP Semiconductors LPC1769/68/67/66/65/64/63
32-bit ARM Cortex-M3 microcontroller
10. Thermal characteristics
The average chip junction temperature, Tj (C), can be calculated using the following
equation:
(1)
• Tamb = ambient temperature (C)
• Rth(j-a) = the package junction-to-ambient thermal resistance (C/W)
• PD = sum of internal and I/O power dissipation
The internal power dissipation is the product of IDD and VDD. The I/O power dissipation of
the I/O pins is often small and many times can be negligible. However it can be significant
in some applications.
Table 7. Thermal resistance (15 %)
Symbol Parameter Conditions Max/Min Unit
LQFP100
Rth(j-a) thermal resistance from
junction to ambient
JEDEC (4.5 in 4 in); still air 38.01 C/W
Single-layer (4.5 in 3 in); still air 55.09 C/W
Rth(j-c) thermal resistance from
junction to case
9.065 C/W
TFBGA100
Rth(j-a) thermal resistance from
junction to ambient
JEDEC (4.5 in 4 in); still air 55.2 C/W
Single-layer (4.5 in 3 in); still air 45.6 C/W
Rth(j-c) thermal resistance from
junction to case
9.5 C/W
Tj Tamb PD Rth j a – += LPC1769_68_67_66_65_64_63 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet Rev. 9.5 — 24 June 2014 47 of 89
NXP Semiconductors LPC1769/68/67/66/65/64/63
32-bit ARM Cortex-M3 microcontroller
11. Static characteristics
Table 8. Static characteristics
Tamb = 40 C to +85 C, unless otherwise specified.
Symbol Parameter Conditions Min Typ[1] Max Unit
Supply pins
VDD(3V3) supply voltage (3.3 V) external rail [2] 2.4 3.3 3.6 V
VDD(REG)(3V3) regulator supply voltage
(3.3 V)
2.4 3.3 3.6 V
VDDA analog 3.3 V pad supply
voltage
[3][4] 2.5 3.3 3.6 V
Vi(VBAT) input voltage on pin
VBAT
[5] 2.1 3.3 3.6 V
Vi(VREFP) input voltage on pin
VREFP
[3] 2.5 3.3 VDDA V
IDD(REG)(3V3) regulator supply current
(3.3 V)
active mode; code
while(1){}
executed from flash; all
peripherals disabled;
PCLK = CCLK⁄
8
CCLK = 12 MHz; PLL
disabled
[6][7] - 7- mA
CCLK = 100 MHz; PLL
enabled
[6][7] - 42- mA
CCLK = 100 MHz; PLL
enabled (LPC1769)
[6][8] - 50- mA
CCLK = 120 MHz; PLL
enabled (LPC1769)
[6][8] - 67- mA
sleep mode [6][9] - 2- mA
deep sleep mode [6][10] - 240 - A
power-down mode [6][10] - 31 - A
deep power-down mode;
RTC running
[11] - 630- nA
IBAT battery supply current deep power-down mode;
RTC running
VDD(REG)(3V3) present [12] - 530- nA
VDD(REG)(3V3) not
present
[13] -
1.1 - A
IDD(IO) I/O supply current deep sleep mode [14][15] - 40- nA
power-down mode [14][15] - 40- nA
deep power-down mode [14] - 10- nALPC1769_68_67_66_65_64_63 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet Rev. 9.5 — 24 June 2014 48 of 89
NXP Semiconductors LPC1769/68/67/66/65/64/63
32-bit ARM Cortex-M3 microcontroller
IDD(ADC) ADC supply current active mode;
ADC powered
[16][17] - 1.95- mA
ADC in Power-down
mode
[16][18] - <0.2 - A
deep sleep mode [16] - 38- nA
power-down mode [16] - 38- nA
deep power-down mode [16] - 24- nA
II(ADC) ADC input current on pin VREFP
deep sleep mode [19] - 100- nA
power-down mode [19] - 100- nA
deep power-down
mode
[19] - 100- nA
Standard port pins, RESET, RTCK
IIL LOW-level input current VI = 0 V; on-chip pull-up
resistor disabled
- 0.5 10 nA
IIH HIGH-level input
current
VI = VDD(3V3); on-chip
pull-down resistor
disabled
- 0.5 10 nA
IOZ OFF-state output
current
VO = 0 V; VO = VDD(3V3);
on-chip pull-up/down
resistors disabled
- 0.5 10 nA
VI input voltage pin configured to provide
a digital function
[20][21]
[22]
0- 5.0 V
VO output voltage output active 0 - VDD(3V3) V
VIH HIGH-level input
voltage
0.7VDD(3V3) --V
VIL LOW-level input voltage - - 0.3VDD(3V3) V
Vhys hysteresis voltage 0.4 - - V
VOH HIGH-level output
voltage
IOH = 4 mA VDD(3V3)
0.4
--V
VOL LOW-level output
voltage
IOL = 4 mA --0.4 V
IOH HIGH-level output
current
VOH = VDD(3V3) 0.4 V 4 - - mA
IOL LOW-level output
current
VOL = 0.4 V 4- - mA
IOHS HIGH-level short-circuit
output current
VOH =0V [23] - - 45 mA
IOLS LOW-level short-circuit
output current
VOL = VDD(3V3) [23] --50 mA
Ipd pull-down current VI =5V 10 50 150 A
Ipu pull-up current VI =0V 15 50 85 A
VDD(3V3) < VI <5V 0 0 0 A
Table 8. Static characteristics …continued
Tamb = 40 C to +85 C, unless otherwise specified.
Symbol Parameter Conditions Min Typ[1] Max UnitLPC1769_68_67_66_65_64_63 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet Rev. 9.5 — 24 June 2014 49 of 89
NXP Semiconductors LPC1769/68/67/66/65/64/63
32-bit ARM Cortex-M3 microcontroller
[1] Typical ratings are not guaranteed. The values listed are at room temperature (25 C), nominal supply voltages.
[2] For USB operation 3.0 V VDD((3V3) 3.6 V. Guaranteed by design.
[3] VDDA and VREFP should be tied to VDD(3V3) if the ADC and DAC are not used.
[4] VDDA for DAC specs are from 2.7 V to 3.6 V.
I
2C-bus pins (P0[27] and P0[28])
VIH HIGH-level input
voltage
0.7VDD(3V3) --V
VIL LOW-level input voltage - - 0.3VDD(3V3) V
Vhys hysteresis voltage - 0.05
VDD(3V3)
- V
VOL LOW-level output
voltage
IOLS = 3 mA --0.4 V
ILI input leakage current VI = VDD(3V3) [24] - 24 A
VI =5V - 10 22 A
Oscillator pins
Vi(XTAL1) input voltage on pin
XTAL1
0.5 1.8 1.95 V
Vo(XTAL2) output voltage on pin
XTAL2
0.5 1.8 1.95 V
Vi(RTCX1) input voltage on pin
RTCX1
0.5 - 3.6 V
Vo(RTCX2) output voltage on pin
RTCX2
0.5 - 3.6 V
USB pins (LPC1769/68/66/65/64 only)
IOZ OFF-state output
current
0V>
NXP Semiconductors LPC1769/68/67/66/65/64/63
32-bit ARM Cortex-M3 microcontroller
23. Contents
1 General description . . . . . . . . . . . . . . . . . . . . . . 1
2 Features and benefits . . . . . . . . . . . . . . . . . . . . 1
3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
4 Ordering information. . . . . . . . . . . . . . . . . . . . . 4
4.1 Ordering options . . . . . . . . . . . . . . . . . . . . . . . . 4
5 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
6 Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . 6
7 Pinning information. . . . . . . . . . . . . . . . . . . . . . 7
7.1 Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
7.2 Pin description . . . . . . . . . . . . . . . . . . . . . . . . 10
8 Functional description . . . . . . . . . . . . . . . . . . 21
8.1 Architectural overview . . . . . . . . . . . . . . . . . . 21
8.2 ARM Cortex-M3 processor . . . . . . . . . . . . . . . 21
8.3 On-chip flash program memory . . . . . . . . . . . 21
8.4 On-chip SRAM . . . . . . . . . . . . . . . . . . . . . . . . 21
8.5 Memory Protection Unit (MPU). . . . . . . . . . . . 21
8.6 Memory map. . . . . . . . . . . . . . . . . . . . . . . . . . 22
8.7 Nested Vectored Interrupt Controller (NVIC) . 24
8.7.1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
8.7.2 Interrupt sources. . . . . . . . . . . . . . . . . . . . . . . 24
8.8 Pin connect block . . . . . . . . . . . . . . . . . . . . . . 24
8.9 General purpose DMA controller . . . . . . . . . . 24
8.9.1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
8.10 Fast general purpose parallel I/O . . . . . . . . . . 25
8.10.1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
8.11 Ethernet . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
8.11.1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
8.12 USB interface . . . . . . . . . . . . . . . . . . . . . . . . 27
8.12.1 USB device controller . . . . . . . . . . . . . . . . . . . 27
8.12.1.1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
8.12.2 USB host controller . . . . . . . . . . . . . . . . . . . . 28
8.12.2.1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
8.12.3 USB OTG controller . . . . . . . . . . . . . . . . . . . . 28
8.12.3.1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
8.13 CAN controller and acceptance filters . . . . . . 28
8.13.1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
8.14 12-bit ADC . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
8.14.1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
8.15 10-bit DAC . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
8.15.1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
8.16 UARTs. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
8.16.1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
8.17 SPI serial I/O controller. . . . . . . . . . . . . . . . . . 30
8.17.1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
8.18 SSP serial I/O controller . . . . . . . . . . . . . . . . . 30
8.18.1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31
8.19 I2C-bus serial I/O controllers . . . . . . . . . . . . . 31
8.19.1 Features. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31
8.20 I2S-bus serial I/O controllers . . . . . . . . . . . . . 32
8.20.1 Features. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32
8.21 General purpose 32-bit timers/external event
counters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32
8.21.1 Features. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32
8.22 Pulse width modulator . . . . . . . . . . . . . . . . . . 33
8.22.1 Features. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33
8.23 Motor control PWM . . . . . . . . . . . . . . . . . . . . 34
8.24 Quadrature Encoder Interface (QEI) . . . . . . . 34
8.24.1 Features. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34
8.25 Repetitive Interrupt (RI) timer. . . . . . . . . . . . . 35
8.25.1 Features. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35
8.26 ARM Cortex-M3 system tick timer . . . . . . . . . 35
8.27 Watchdog timer . . . . . . . . . . . . . . . . . . . . . . . 35
8.27.1 Features. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35
8.28 RTC and backup registers . . . . . . . . . . . . . . . 36
8.28.1 Features. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36
8.29 Clocking and power control . . . . . . . . . . . . . . 36
8.29.1 Crystal oscillators. . . . . . . . . . . . . . . . . . . . . . 36
8.29.1.1 Internal RC oscillator . . . . . . . . . . . . . . . . . . . 37
8.29.1.2 Main oscillator . . . . . . . . . . . . . . . . . . . . . . . . 37
8.29.1.3 RTC oscillator . . . . . . . . . . . . . . . . . . . . . . . . 37
8.29.2 Main PLL (PLL0) . . . . . . . . . . . . . . . . . . . . . . 38
8.29.3 USB PLL (PLL1) . . . . . . . . . . . . . . . . . . . . . . 38
8.29.4 RTC clock output . . . . . . . . . . . . . . . . . . . . . . 38
8.29.5 Wake-up timer . . . . . . . . . . . . . . . . . . . . . . . . 38
8.29.6 Power control . . . . . . . . . . . . . . . . . . . . . . . . . 39
8.29.6.1 Sleep mode . . . . . . . . . . . . . . . . . . . . . . . . . . 39
8.29.6.2 Deep-sleep mode. . . . . . . . . . . . . . . . . . . . . . 39
8.29.6.3 Power-down mode . . . . . . . . . . . . . . . . . . . . . 40
8.29.6.4 Deep power-down mode . . . . . . . . . . . . . . . . 40
8.29.6.5 Wake-up interrupt controller . . . . . . . . . . . . . 40
8.29.7 Peripheral power control . . . . . . . . . . . . . . . . 40
8.29.8 Power domains . . . . . . . . . . . . . . . . . . . . . . . 41
8.30 System control . . . . . . . . . . . . . . . . . . . . . . . . 42
8.30.1 Reset . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42
8.30.2 Brownout detection . . . . . . . . . . . . . . . . . . . . 43
8.30.3 Code security (Code Read Protection - CRP) 43
8.30.4 APB interface . . . . . . . . . . . . . . . . . . . . . . . . . 43
8.30.5 AHB multilayer matrix . . . . . . . . . . . . . . . . . . 44
8.30.6 External interrupt inputs . . . . . . . . . . . . . . . . . 44
8.30.7 Memory mapping control . . . . . . . . . . . . . . . . 44
8.31 Emulation and debugging . . . . . . . . . . . . . . . 44
9 Limiting values . . . . . . . . . . . . . . . . . . . . . . . . 45
10 Thermal characteristics . . . . . . . . . . . . . . . . . 46NXP Semiconductors LPC1769/68/67/66/65/64/63
32-bit ARM Cortex-M3 microcontroller
© NXP Semiconductors N.V. 2014. All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 24 June 2014
Document identifier: LPC1769_68_67_66_65_64_63
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
11 Static characteristics. . . . . . . . . . . . . . . . . . . . 47
11.1 Power consumption . . . . . . . . . . . . . . . . . . . . 50
11.2 Peripheral power consumption . . . . . . . . . . . . 53
11.3 Electrical pin characteristics . . . . . . . . . . . . . . 54
12 Dynamic characteristics . . . . . . . . . . . . . . . . . 56
12.1 Flash memory. . . . . . . . . . . . . . . . . . . . . . . . . 56
12.2 External clock . . . . . . . . . . . . . . . . . . . . . . . . . 56
12.3 Internal oscillators. . . . . . . . . . . . . . . . . . . . . . 57
12.4 I/O pins . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 57
12.5 I2C-bus . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 58
12.6 I2S-bus interface . . . . . . . . . . . . . . . . . . . . . . 59
12.7 SSP interface . . . . . . . . . . . . . . . . . . . . . . . . . 61
12.8 USB interface . . . . . . . . . . . . . . . . . . . . . . . . 63
12.9 SPI . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 64
13 ADC electrical characteristics . . . . . . . . . . . . 66
14 DAC electrical characteristics . . . . . . . . . . . . 69
15 Application information. . . . . . . . . . . . . . . . . . 70
15.1 Suggested USB interface solutions . . . . . . . . 70
15.2 Crystal oscillator XTAL input and component
selection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 73
15.3 XTAL and RTCX Printed Circuit Board (PCB)
layout guidelines. . . . . . . . . . . . . . . . . . . . . . . 74
15.4 Standard I/O pin configuration . . . . . . . . . . . . 75
15.5 Reset pin configuration. . . . . . . . . . . . . . . . . . 76
15.6 ElectroMagnetic Compatibility (EMC). . . . . . . 77
16 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 78
17 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 81
18 Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . 83
19 References . . . . . . . . . . . . . . . . . . . . . . . . . . . . 83
20 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 84
21 Legal information. . . . . . . . . . . . . . . . . . . . . . . 86
21.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 86
21.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 86
21.3 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 86
21.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 87
22 Contact information. . . . . . . . . . . . . . . . . . . . . 87
23 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 88
1. General description
NXP’s UCODE G2iM series transponder ICs offers in addition to the leading-edge read
range features such as a Tag Tamper Alarm, Data Transfer, Digital Switch, advanced
privacy-protection modes and a 640 bit configurable User Memory.
Very high chip sensitivity (17.5 dBm) enables longer read ranges with simple, single-port
antenna designs. In fashion and retail the UCODE G2iM series improve read rates and
provide for theft deterrence. In the electronic device market, they are ideally suited for
device configuration, activation, production control and PCB tagging. In authentication
applications, they protect brands and guard against counterfeiting. They can also be used
to tag containers, electronic vehicles, airline baggage, and more.
In addition to the EPC specifications the UCODE G2iM offers an integrated Product Status
Flag (PSF) feature and read protection of the memory content.
The UCODE G2iM+ offers on top of the UCODE G2iM features an integrated tag tamper
alarm, digital switch, external supply mode, data transfer mode and real read range
reduction. A special feature is the conditional, automatic real read range reduction, where
the activation condition can be defined by the user, is newly introduced in the UCODE
G2iM+. When connected to a power supply, the READ as well as the WRITE range can
be boosted to a sensitivity of 27 dBm.
The UCODE G2iM+ also allows the segmentation of the 640 bit User Memory in up to
three segments (open, protected, private) with different access levels (Access- and User
Password). For applications which require a longer EPC number the UCODE G2iM+
offers the possibility of up to 448 bit.
2. Features and benefits
2.1 Key features
UHF RFID Gen2 tag chip according EPCglobal v1.2.0
256 bit EPC for UCODE G2iM and up to 448 bit EPC for UCODE G2iM+
Up to 640 bit User Memory which can be segmented in the UCODE G2iM+
Private User Memory area protected by special User Password
Memory read protection
Integrated Product Status Flag (PSF)
Tag tamper alarm
Digital switch
Data transfer mode
SL3S1003_1013
UCODE G2iM and G2iM+
Rev. 3.6 — 17 October 2014
201236
Product data sheet
COMPANY PUBLICSL3S1003_1013 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 3.6 — 17 October 2014
201236 2 of 43
NXP Semiconductors SL3S1003_1013
UCODE G2iM and G2iM+
Real Read Range Reduction (Privacy Mode)
Conditional Real Read Range Reduction
External supply mode
Long read/write ranges due to extremely low power design
Reliable operation of multiple tags due to advanced anti-collision
Broad international operating frequency: from 840 MHz to 960 MHz
Data retention: 20 years
Wide specified temperature range: 40 C up to +85 C
2.1.1 Memory
256 bit of EPC memory / up to 448 bit in G2iM+
96 bit Tag IDentifier (TID) including 48-bit factory locked unique serial number
112 bit User TID memory
32 bit Kill Password to permanently disable the tag
32 bit Access Password to allow a transition into the secured state
32 bit User Password to allow access to the private user memory segment
Read protection
BlockWrite (32 bit)
Write Lock
BlockPermalock
2.2 Key benefits
2.2.1 End user benefit
Outstanding User Memory size of 640 bit
Prevention of unauthorized memory access through different levels of read protection
Indication of tag tampering attempt by use of the tag tamper alarm feature
Electronic device configuration and / or activation by the use of the digital switch / data
transfer mode
Theft deterrence supported by the PSF feature (PSF alarm or EPC code)
Small label sizes, long read ranges due to high chip sensitivity
Product identification through unalterable TID range, including a 48 bit serial number
Reliable operation in dense reader and noisy environments through high interference
suppression
2.2.2 Antenna design benefits
High sensitivity enables small and cost efficient antenna designs
Low Q-Value eases broad band antenna design for global usage
2.2.3 Label manufacturer benefit
Consistent performance on different materials due to low Q-factor
Ease of assembly and high assembly yields through large chip input capacitance and
Polyimide spacer
Fast first WRITE or BLOCKWRITE of the EPC memory for fast label initializationSL3S1003_1013 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 3.6 — 17 October 2014
201236 3 of 43
NXP Semiconductors SL3S1003_1013
UCODE G2iM and G2iM+
2.3 Custom commands
PSF Alarm
Built-in PSF (Product Status Flag), enables the UHF RFID tag to be used as EAS tag
(Electronic Article Surveillance) tag without the need for a back-end data base.
Read Protect
Protects all memory content from unauthorized reading.
ChangeConfig
Configures the additional features of the chip like external supply mode, tamper alarm,
digital switch, read range reduction, privacy mode activation condition or data transfer.
The UCODE G2iM+ is equipped with a number of additional features. Nevertheless, the
chip is designed in a way standard EPCglobal READ/WRITE/ACCESS commands can be
used to operate the features. No custom commands are needed to take advantage of all
the features in case of unlocked EPC memory.
3. Applications
3.1 Markets
Fashion (apparel and footwear)
Retail
Electronics
Fast moving consumer goods
Asset management
Electronic vehicle identification
3.2 Applications
Supply chain management
Item level tagging
Pallet and case tracking
Container identification
Product authentication
PCB tagging
Cost efficient, low level seals
Wireless firmware download
Wireless product activationSL3S1003_1013 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 3.6 — 17 October 2014
201236 4 of 43
NXP Semiconductors SL3S1003_1013
UCODE G2iM and G2iM+
4. Ordering information
5. Marking
Table 1. Ordering information
Type number Package
Name IC type Description Version
SL3S1003FUD/BG Wafer G2iM bumped G2iM die on sawn 8” 120 mm wafer,
7 mm Polyimide spacer
not applicable
SL3S1013FUD/BG Wafer G2iM+ bumped G2iM+ die on sawn 8” 120 mm wafer,
7 mm Polyimide spacer
not applicable
SL3S1013FTB0 XSON6 G2iM+ plastic extremely thin small outline package;
no leads; 6 terminals; body 1 1.45 0.5 mm
SOT886F1
Table 2. Marking codes
Type number Marking code Comment Version
SL3S1013FTB0 US UCODE G2iM+ SOT886SL3S1003_1013 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 3.6 — 17 October 2014
201236 5 of 43
NXP Semiconductors SL3S1003_1013
UCODE G2iM and G2iM+
6. Block diagram
The SL3S10x3 IC consists of three major blocks:
- Analog Interface
- Digital Control
- EEPROM
The analog part provides stable supply voltage and demodulates data received from the
reader for being processed by the digital part. Further, the modulation transistor of the
analog part transmits data back to the reader.
The digital section includes the state machines, processes the protocol and handles
communication with the EEPROM, which contains the EPC and the user data.
Fig 1. Block diagram of SL3S10x3 IC
001aam226
MOD
DEMOD
VREG
VDD
VDD
data
in
data
out
R/W
ANALOG
RF INTERFACE
PAD
PAD
RECT
DIGITAL CONTROL
ANTENNA
ANTICOLLISION
READ/WRITE
CONTROL
ACCESS CONTROL
EEPROM INTERFACE
CONTROL
RF INTERFACE
CONTROL
I/O CONTROL
I/O
CONTROL
EEPROM
MEMORY
SEQUENCER
CHARGE PUMP
PAD
OUT
PADSL3S1003_1013 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 3.6 — 17 October 2014
201236 6 of 43
NXP Semiconductors SL3S1003_1013
UCODE G2iM and G2iM+
7. Pinning information
7.1 Pin description
Fig 2. Pinning bare die Fig 3. Pin configuration for SOT886
001aan572
VDD
OUT RFN
RFP
NXP trademark
SL3S10x3FTB0
n.c.
aaa-001689
RFP
RFN
n.c.
VDD
OUT
Transparent top view
2
3
1
5
4
6
Table 3. Pin description bare die
Symbol Description
OUT output pin
RFN grounded antenna connector
VDD external supply
RFP ungrounded antenna connector
Table 4. Pin description SOT886
Pin Symbol Description
1 RFP ungrounded antenna connector
2 n.c. not connected
3 RFN grounded antenna connector
4 OUT output pin
5 n.c. not connected
6 VDD external supplySL3S1003_1013 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 3.6 — 17 October 2014
201236 7 of 43
NXP Semiconductors SL3S1003_1013
UCODE G2iM and G2iM+
8. Wafer layout
8.1 Wafer layout
(1) Die to Die distance (metal sealring - metal sealring) 21,4 m, (X-scribe line width: 15 m)
(2) Die to Die distance (metal sealring - metal sealring) 21,4 m, (Y-scribe line width: 15 m)
(3) Chip step, x-length: 615 m
(4) Chip step, y-length: 475 m
(5) Bump to bump distance X (OUT - RFN): 513 m
(6) Bump to bump distance Y (RFN - RFP): 333 m
(7) Distance bump to metal sealring X: 43,5 m (outer edge - top metal)
(8) Distance bump to metal sealring (RFP, VDD) Y: 40,3 m
(9) Distance bump to metal sealring (RFN, OUT) Y: 80,3 m
Bump size X Y: 60 m ´ 60 m
Remark: OUT and VDD are used with G2iM+ only
Fig 4. SL3S10x3 wafer layout
not to scale! 001aan642
(1)
(7)
(2)
(8)
(5)
(6)
(4)
(3)
Y
X
VDD
(9)
OUT
RFN
RFPSL3S1003_1013 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 3.6 — 17 October 2014
201236 8 of 43
NXP Semiconductors SL3S1003_1013
UCODE G2iM and G2iM+
9. Mechanical specification
The SL3S10x3 wafers are offered with 120 mm thickness and 7mm Polyimide spacer.
This robust structure with the enhanced Polyimide spacer supports easy assembly due to
low assembly variations.
9.1 Wafer specification
See Ref. 20 “Data sheet - Delivery type description – General specification for 8” wafer on
UV-tape with electronic fail die marking, BU-ID document number: 1093**”.
9.1.1 Wafer
Table 5. Specifications
Wafer
Designation each wafer is scribed with batch number and
wafer number
Diameter 200 mm (8”)
Thickness 120 m 15 m
Number of pads 4
Pad location non diagonal/ placed in chip corners
Distance pad to pad RFN-RFP 333.0 µm
Distance pad to pad OUT-RFN 513.0 µm
Process CMOS 0.14 mm
Batch size 25 wafers
Potential good dies per wafer 100544
Wafer backside
Material Si
Treatment ground and stress release
Roughness Ra max. 0.5 m, Rt max. 5 m
Chip dimensions
Die size including scribe 0.615 mm 0.475 mm = 0.292 mm2
Scribe line width: x-dimension = 15 m
y-dimension = 15 m
Passivation on front
Type Sandwich structure
Material PE-Nitride (on top)
Thickness 1.75 m total thickness of passivation
Polyimide spacer 7 m
Au bump
Bump material > 99.9% pure Au
Bump hardness 35 – 80 HV 0.005
Bump shear strength > 70 MPa
Bump height 25 m[1]
Bump height uniformitySL3S1003_1013 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 3.6 — 17 October 2014
201236 9 of 43
NXP Semiconductors SL3S1003_1013
UCODE G2iM and G2iM+
[1] Because of the 7 m spacer, the bump will measure 18 m relative height protruding the spacer.
9.1.2 Fail die identification
No inkdots are applied to the wafer.
Electronic wafer mapping (SECS II format) covers the electrical test results and
additionally the results of mechanical/visual inspection.
See Ref. 20 “Data sheet - Delivery type description – General specification for 8” wafer on
UV-tape with electronic fail die marking, BU-ID document number: 1093**”
9.1.3 Map file distribution
See Ref. 20 “Data sheet - Delivery type description – General specification for 8” wafer on
UV-tape with electronic fail die marking, BU-ID document number: 1093**”
– within a die 2 m
– within a wafer 3 m
– wafer to wafer 4 m
Bump flatness 1.5 m
Bump size
– RFP, RFN 60 60 m
– OUT, VDD 60 60 m
Bump size variation 5 m
Table 5. Specifications …continuedSL3S1003_1013 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 3.6 — 17 October 2014
201236 10 of 43
NXP Semiconductors SL3S1003_1013
UCODE G2iM and G2iM+
10. Functional description
10.1 Air interface standards
The UCODE G2iM fully supports all parts of the "Specification for RFID Air Interface
EPCglobal, EPCTM Radio-Frequency Identity Protocols, Class-1 Generation-2 UHF
RFID, Protocol for Communications at 860 MHz to 960 MHz, Version 1.2.0".
10.2 Power transfer
The interrogator provides an RF field that powers the tag, equipped with a UCODE G2iM.
The antenna transforms the impedance of free space to the chip input impedance in order
to get the maximum possible power for the UCODE G2iM on the tag. The UCODE G2iM+
can also be supplied externally.
The RF field, which is oscillating on the operating frequency provided by the interrogator,
is rectified to provide a smoothed DC voltage to the analog and digital modules of the IC.
The antenna attached to the chip may use a DC connection between the two antenna
pads which also enables loop antenna design.
10.3 Data transfer
10.3.1 Reader to tag Link
An interrogator transmits information to the UCODE G2iM by modulating an UHF RF
signal. The UCODE G2iM receives both information and operating energy from this RF
signal. Tags are passive, meaning that they receive all of their operating energy from the
interrogator's RF waveform. In order to further improve the read range the UCODE G2iM
can be externally supplied as well so the energy to operate the chip does not need to be
transmitted by the reader.
An interrogator is using a fixed modulation and data rate for the duration of at least one
inventory round. It communicates to the UCODE G2iM by modulating an RF carrier using
DSB-ASK with PIE encoding.
For further details refer to Section 17, Ref. 1. Interrogator-to-tag (R=>T) communications.
10.3.2 Tag to reader Link
An interrogator receives information from a UCODE G2iM by transmitting an unmodulated
RF carrier and listening for a backscattered reply. The UCODE G2iM backscatters by
switching the reflection coefficient of its antenna between two states in accordance with
the data being sent. For further details refer to Section 17, Ref. 1, chapter 6.3.1.3.
The UCODE G2iM communicates information by backscatter-modulating the amplitude
and/or phase of the RF carrier. Interrogators shall be capable of demodulating either
demodulation type.
The encoding format, selected in response to interrogator commands, is either FM0
baseband or Miller-modulated subcarrier.SL3S1003_1013 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 3.6 — 17 October 2014
201236 11 of 43
NXP Semiconductors SL3S1003_1013
UCODE G2iM and G2iM+
10.4 UCODE G2iM and UCODE G2iM+ differences
The UCODE G2iM is tailored for application where EPC or TID number space, and User
Memory is needed. The UCODE G2iM+ provides beside the segmented memory
additional functionality such as tag tamper alarm, external supply operation to further
boost read/write range (external supply mode), a privacy mode reducing the read range
where the activation criteria (open or short) can be defined or I/O functionality (data
transfer to externally connected devices) where required.
The following table provides an overview of UCODE G2iM, UCODE G2iM+ special
features.
10.5 Supported commands
The UCODE G2iM supports all mandatory EPCglobal V1.2.0 commands.
In addition the UCODE G2iM supports the following optional commands:
• ACCESS
• BlockWrite (32 bit)
• BlockPermalock
The UCODE G2iM features the following custom commands described more in detail
later:
• ResetReadProtect (backward compatible to UCODE G2X; UCODE G2iL)
• ReadProtect(backward compatible to UCODE G2X; UCODE G2iL)
• ChangeEAS (backward compatible to UCODE G2X; UCODE G2iL)
• EAS_Alarm(backward compatible to UCODE G2X; UCODE G2iL)
• ChangeConfig(backward compatible to UCODE G2iL)
Table 6. Overview of UCODE G2iM and UCODE G2iM+ features
Features UCODE G2iM UCODE G2iM+
Read protection (bankwise) yes yes
PSF (Built-in Product Status Flag) yes yes
Backscatter strength reduction yes yes
BlockWrite (32 bit) yes yes
BlockPermalock yes yes
User TID (112 bit) yes yes
Segmented user memory (open, protected, private) - yes
Additional User Password for private memory - yes
EPC size selectable (448bit max.) - yes
Tag tamper alarm - yes
Digital switch / Digital input - yes
External supply mode - yes
Data transfer - yes
Real read range reduction - yes
Conditional Real Read Range Reduction - yesSL3S1003_1013 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 3.6 — 17 October 2014
201236 12 of 43
NXP Semiconductors SL3S1003_1013
UCODE G2iM and G2iM+
10.6 UCODE G2iM and UCODE G2iM+ memory
The UCODE G2iM and UCODE G2iM+ memory is implemented according EPCglobal
Class1Gen2 and organized in four banks:
The logical address of all memory banks begin at zero (00h).
In addition to the four memory banks two configuration words are available. The first to
handle the UCODE G2iM memory configuration (Mem-Config-Word) is available at EPC
bank 01 address 1F0h and the second to handle UCODE G2iM specific features
Config-Word) is available at EPC bank 01 address 200h. The configuration words are
described in detail in Section 10.7.1 “ChangeConfig” and Section 10.7.3 “UCODE G2iM+
memory configuration control mechanism”.
Memory pages (16 bit words) pre-programmed to zero will not execute an erase cycle
before writing data to it. This approach accelerates initialization of the chip and enables
faster programming of the memory.
Table 7. UCODE G2iM and UCODE G2iM+ memory sections
Name Size Bank
Reserved memory (32 bit ACCESS and 32 bit KILL password) 64 bit 00b
EPC (excluding 16 bit CRC-16 and 16 bit PC) (UCODE G2iM)
EPC (excluding 16 bit CRC-16 and 16 bit PC) (UCODE G2iM+)
256 bit
128 bit
up to
448 bit
01b
G2iM Configuration Word (Config-Word) 16 bit 01b
G2iM Memory Configuration Word (Mem-Config-Word) 16 bit 01b
TID (including permalocked unique 48 bit serial number; 16bit unalterable
XTID-header)
96 bit 10b
User TID 112 bit 10b
User memory (UCODE G2iM)
User memory can be segmented and configured (UCODE G2iM+)
512 bit
320 bit
up to
640 bit
11bSL3S1003_1013 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 3.6 — 17 October 2014
201236 13 of 43
NXP Semiconductors SL3S1003_1013
UCODE G2iM and G2iM+
10.6.1 UCODE G2iM and UCODE G2iM+ overall memory map
Table 8. UCODE G2iM and UCODE G2iM+ overall memory map
Bank
address
Memory
address
Type Content Initial Remark
Bank 00 00h to 1Fh reserved Kill Password all 00h unlocked memory
20h to 3Fh reserved Access Password all 00h unlocked memory
Bank 01
EPC
00h to 0Fh EPC CRC-16: refer to Ref. 16 memory mapped
calculated CRC
10h to 14h EPC backscatter length 00110b unlocked memory
15h EPC UMI 0b calculated according EPC
16h EPC reserved for future use 0b hardwired to 0
17h to 1Fh EPC numbering system indicator 00h unlocked memory
20h to 9Fh EPC EPC [1] unlocked memory
Bank 01
Memory
Config Word
1F0h to 1F3h EPC RFU 0000b hardwired to 0000b
1F4h to 1F7h EPC Number of EPC blocks 0h unlocked memory
1F8h to 1FBh EPC Number protected memory
blocks
0h unlocked memory
1FCh to 1FFh EPC Number of private memory
blocks
0h unlocked memory
Bank 01
Config Word
200h EPC tamper alarm flag 0b[4] indicator bit
201h EPC external supply flag or input
signal
0b[4] indicator bit
202h EPC RFU 0b[4] locked memory
203h EPC RFU 0b[4] locked memory
204h EPC invert digital output: 0b[4] temporary bit
205h EPC transparent mode on/off 0b[4] temporary bit
206h EPC transparent mode data/raw 0b[4] temporary bit
207h EPC conditional read range
reduction
0b[4] unlocked memory
208h EPC conditional read range
reduction
open/short
0b[4] unlocked memory
209h EPC max. backscatter strength 1b[4] unlocked memory
20Ah EPC digital output 0b[4] unlocked memory
20Bh EPC read range reduction on/off 0b[4] unlocked memory
20Ch EPC read protect User Memory 0b[4] locked memory
20Dh EPC read protect EPC Bank 0b[4] unlocked memory
20Eh EPC read protect TID 0b[4] unlocked memory
20Fh EPC PSF alarm flag 0b[4] unlocked memorySL3S1003_1013 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 3.6 — 17 October 2014
201236 14 of 43
NXP Semiconductors SL3S1003_1013
UCODE G2iM and G2iM+
[1] UCODE G2iM: HEX E200 680A 0000 0000 0000 0000 (0000 0000)
UCODE G2iM+: HEX E200 680B 0000 0000 0000 0000 (0000 0000)
[2] Indicates the existence of a Configuration Word at the end of the EPC number
[3] See Figure 5
[4] See also Table 13 for further details.
Bank 10
TID
00h to 07h TID allocation class identifier 1110 0010b locked memory
08h to 13h TID tag mask designer identifier 0000 0000 0110b locked memory
14h TIG config word indicator 1b[2] locked memory
14h to 1Fh TID tag model number TMNR[3] locked memory
20h to 2Fh TID XTID Header 00h locked memory
30h to 5Fh TID serial number SNR locked memory
60h to CFh TID User TID memory all ’0’ unlocked memory
Bank 11
USER
000h to 27Fh USER User Memory undefined unlocked memory
Table 8. UCODE G2iM and UCODE G2iM+ overall memory map
Bank
address
Memory
address
Type Content Initial Remarkxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxx x x x xxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxx xx xx xxxxx
xxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxx xxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxx x x
xxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxx
xxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxx xxx
SL3S1003_1013 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
COMPANY PUBLIC
Product data sheet Rev. 3.6 — 17 October 2014
201236 15 of 43
NXP Semiconductors SL3S1003_1013
UCODE G2iM and G2iM+
10.6.2 UCODE G2iM and UCODE G2iM+ TID memory details
Table 9. G2iM TID description
Model number
Type First 32 bit of
TID memory
Class ID Mask designer
ID
Config Word
indicator
Sub version
number
Version (Silicon)
number
UCODE G2iM E200680A E2h 006h 1 0000b 0001010
UCODE G2iM+ E200680B E2h 006h 1 0000b 0001011
Fig 5. G2iM TID memory structure
001aan573
Class Identifier
MS Byte
MS Bit LS Bit
TID
Mask-Designer Identifier Model Number XTID Header Serial Number
7Bits 000 11 11 15 0 47 0
Addresses 00h 07h 13h 1Fh 5Fh
Addresses 00h CFh
08h 14h 20h 2Fh 30h
E2h
(EAN.UCC)
TID Example
(UCODE G2iM)
006h
(NXP)
80Ah
(UCODE G2iM)
0000h
Sub Version Number Version Number
000b 0001010b
(UCODE G2iM)
Bits 0 3 0 6 0
Addresses 14h 18h 19h 1Fh
LS Byte
User TID
112 0
60h CFhSL3S1003_1013 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 3.6 — 17 October 2014
201236 16 of 43
NXP Semiconductors SL3S1003_1013
UCODE G2iM and G2iM+
10.7 Custom commands
The UCODE G2iM and UCODE G2iM+ supports a number of additional features and
custom commands. Nevertheless, the chip is designed in a way standard EPCglobal
READ/WRITE/ACCESS commands can be used to operate the features.
The memory map stated in the previous section describes the Config-Word used to
control the additional features located at address 200h as well as the Mem-Config-Word
located at 1F0h of the EPC memory. For this reason the standard READ/WRITE
commands of an UHF EPCglobal compliant reader can be used to select the flags,
activate/deactivate features or define memory segments.
The features can only be activated/deactivated (written) using standard EPC WRITE
command as long the EPC is not locked. In case the EPC is locked either the bank needs
to be unlocked to apply changes or the ChangeConfig custom command is used to
change the settings.
The UCODE G2iM products supports the complete UCODE G2iL command set for
backward compatibility reasons.
Bit 14h of the TID indicates the existence of a Configuration Word. This flag will enable
selecting Config-Word enhanced transponders in mixed tag populations.
10.7.1 ChangeConfig
Although UCODE G2iM is tailored for supply chain management, item level tagging and
product authentication the UCODE G2iM+ version enables active interaction with
products. Among the password protected features are the capability of download firmware
to electronics, activate/deactivate electronics which can also be used as theft deterrence,
a dedicated privacy mode by reducing the read range, integrated PSF (Product Status
Flag) or Tag Tamper Alarm. In addition to the UCODE G2iL/G2iL+ the activation condition
(open/short) for the Read Range Reduction can be defined by the user.
The UCODE G2iM ChangeConfig custom command allows handling the special NXP
Semiconductors features described in the following paragraph. Please also see the
memory map in Section 10.6 “UCODE G2iM and UCODE G2iM+ memory” and “Section
10.7.2 “UCODE G2iM and UCODE G2iM+ special features control mechanism”. If the
EPC memory is not write locked the standard EPC READ/WRITE command can be used
to change the settings.
UCODE G2iM and UCODE G2iM+ special features1
UCODE G2iM and UCODE G2iM+ common special features are:
• Bank wise read protection (separate for EPC, TID and User Memory)
EPC bank (except of configuration words), the serial number part of the TID as well as
the User TID and the User Memory (open segment) can be read protected
independently. When protected reading of the particular memory will return '0'. The
flags of the Config-Word can be selected using the standard SELECT command. Only
read protected parts will then participate an inventory round.
1. The features can only be manipulated (enabled/disabled) with unlocked EPC bank, otherwise the ChangeConfig command can be
used.SL3S1003_1013 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 3.6 — 17 October 2014
201236 17 of 43
NXP Semiconductors SL3S1003_1013
UCODE G2iM and G2iM+
• Integrated PSF (Product Status Flag)
The PSF is a general purpose flag that can be used as an EAS (Electronic Article
Surveillance) flag, quality checked flag or similar.
The UCODE G2iM offers two ways of detecting an activated PSF. In cases extremely
fast detection is needed the EAS_Alarm command can be used. The UCODE G2iM
will reply a 64 bit alarm code like described in section EAS_Alarm upon sending the
command. As a second option the EPC SELECT command selecting the PSF flag of
the Config-Word can be used. In the following inventory round only PSF enabled
chips will reply their EPC number.
• Backscatter strength reduction
The UCODE G2iM features two levels of backscatter strengths. Per default maximum
backscatter is enabled in order to enable maximum read rates. When clearing the flag
the strength can be reduced if needed.
UCODE G2iM+ specific special features are:1
• Real Read Range Reduction 4R (UCODE G2iM+ only)
Some applications require the reduction of the read range to close proximity for
privacy reasons. Setting the 4R flag will significantly reduce the chip sensitivity to
+12 dBm. The +12 dBm have to be available at chip start up (slow increase of field
strength is not applicable). For additional privacy, the read protection can be activated
in the same configuration step. The related flag of the configuration word can be
selected using the standard SELECT command so only chips with reduced read
range will be part of an inventory.
Remark: The attenuation will result in only a few centimeter of read range at 36 dBm
EIRP!
• Tag Tamper Alarm (UCODE G2iM+ only)
The UCODE G2iM+ Tamper Alarm will flag the status of the VDD to OUT pad
connection which can be designed as an predetermined breaking point (see
Figure 6).
The status of the pad connection (open/closed) can be read in the configuration register
and/or selected using the EPC SELECT. This feature enables the design of a wireless
RFID safety seal. When breaking the connection by peeling off the label or manipulating a
lock an alarm can be triggered.
Fig 6. Schematic of connecting VDD and OUT pad with a predetermined breaking point
to turn a standard RFID label into a wireless safety seal
001aan668
OUT VDD
RFN RFPSL3S1003_1013 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 3.6 — 17 October 2014
201236 18 of 43
NXP Semiconductors SL3S1003_1013
UCODE G2iM and G2iM+
• Conditional Real Read Range Reduction (UCODE G2iM+ only)
In addition to the 4R and the Tag Tamper Alarm feature the UCODE G2iM+ offers a
feature which combines both in one functionality. This feature allow the automatic
activation of the 4R depending on the status of the VDD to OUT pad connection. To
offer high flexibility for the applications the 4R activation can be done on short (bit 8 =
’1’) or open (bit 8 =’0’) of the VDD to OUT pad connection. For activation of this
feature bit 7 and bit 11 of the Config-Word have to be set to ’1’.
• Digital Switch (UCODE G2iM+ only)
The UCODE G2iM+ OUT pin can be used as digital switch. The state of the output
pad can be switched to VDD or GND depending on the Digital OUT bit of the
Config-Word register. The state of the output is persistent in the memory even after
KILL or switching off the supply. This feature will allow activating/deactivating
externally connected peripherals or can be used as theft deterrence of electronics.
The state of the OUT pin can also be changed temporary by toggling the 'Invert Digital
Output' bit.
• Data transfer Mode (UCODE G2iM+ only)
In applications where not switching the output like described in "Digital Switch" but
external device communication is needed the UCODE G2iM+ Data Transfer Mode
can be used by setting the according bit of the Config-Word register. When activated
the air interface communication will be directly transferred to the OUT pad of the chip.
Two modes of data transfer are available and can be switched using the Transparent
Mode DATA/RAW bit.
The default Transparent Mode DATA will remove the Frame Sync of the
communication and toggle the output with every raising edge in the RF field. This will
allow implementing a Manchester type of data transmission.
The Transparent Mode RAW will switch the demodulated air interface communication
to the OUT pad.
• External Supply Indicator - Digital Input (UCODE G2iM+ only)
The VDD pad of the UCODE G2iM+ can be used as a digital input pin. The state of
the pad is directly associated with the External Supply Indicator bit of the configuration
register. A simple return signaling (chip to reader) can be implemented by polling this
Configuration Word register flag. RF reset is necessary for proper polling.
• External Supply Mode (G2iM+ only)
The UCODE G2iM+ can be supplied externally by connecting 1.85 V (Iout = 0µA)
supply. When externally supplied less energy from the RF field is needed to operate
the chip. This will not just enable further improved sensitivity and read ranges (up to
-27 dBm) but also enable a write range that is equal to the read range.
The figure schematically shows the supply connected to the UCODE G2iM+.
Remark: When permanently externally supplied there will not be a power-on-reset. This
will result in the following limitations:
• When externally supplied session flag S0 will keep it’s state during RF-OFF phase.
• When externally supplied session flag S2, S3, SL will have infinite persistence time
and will behave similar to S0.
• Session flag S1 will behave regular like in pure passive operation.SL3S1003_1013 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 3.6 — 17 October 2014
201236 19 of 43
NXP Semiconductors SL3S1003_1013
UCODE G2iM and G2iM+
The bits to be toggled in the configuration register need to be set to '1'.
E.g. sending 0000 0000 0001 0001 XOR RN16 will activate the 4R and PSF. Sending the
very same command a second time will disable the features again.
The reply of the ChangeConfig will return the current register setting.
Fig 7. Schematic of external power supply
Table 10. ChangeConfig custom command
Command RFU Data RN CRC-16
No. of bits 16 8 16 16 16
Description 11100000
00000111
00000000 Toggle bits
XOR RN 16
handle -
Table 11. ChangeConfig custom command reply
Header Status bits RN CRC-16
No. of bits 1 16 16 16
Description 0 Config-Word Handle -
Table 12. ChangeConfig command-response table
Starting state Condition Response Next state
ready all - ready
arbitrate, reply,
acknowledged
all - arbitrate
open valid handle Status word
needs to change
Backscatter unchanged
Config-Word immediately
open
valid handle Status word does
not need to change
Backscatter Config-Word
immediately
open
secured valid handle Status word
needs to change
Backscatter modified
Config-Word, when done
secured
valid handle Status word does
not need to change
Backscatter Config-Word
immediately
secured
killed all - killed
001aan669
OUT VDD
Vsupply
RFN RFPSL3S1003_1013 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 3.6 — 17 October 2014
201236 20 of 43
NXP Semiconductors SL3S1003_1013
UCODE G2iM and G2iM+
The features can only be activated/deactivated using standard EPC WRITE if the EPC
bank is unlocked. The permanent and temporary bits of the Configuration Word can be
toggled without the need for an Access Password in case the Access Password is set to
zero. In case the EPC bank is locked the lock needs to be removed before applying
changes or the ChangeConfig command has to be used.
10.7.2 UCODE G2iM and UCODE G2iM+ special features control mechanism
Special features of the UCODE G2iM are managed using a configuration word
(Config-Word) located at address 200h in the EPC memory bank.
The entire Config-Word is selectable (using the standard EPC SELECT command), as
well as single bits, and can be read using standard EPC READ command and modified
using the standard EPC WRITE or ChangeConfig custom command in case the EPC
memory is locked for writing.
ChangeConfig can be executed from the OPEN and SECURED state.
The chip will take all “Toggle Bits” for ’0’ if the chip is in the OPEN state or the ACCESS
password is zero; therefore it will not alter any status bits, but report the current status
only. The command will be ignored with an invalid CRC-16 or an invalid handle. The chip
will then remain in the current state. The CRC-16 is calculated from the first
command-code bit to the last handle bit.
A ChangeConfig command without frame-sync and proceeding Req_RN will be ignored.
The command will also be ignored if any of the RFU bits are toggled.
In order to change the configuration, to activate/deactivate a feature a ’1’ has to be written
to the corresponding register flag to toggle the status. E.g. sending 0x0002 to the register
will activate the read protection of the TID. Sending the same command a second time will
again clear the read protection of the TID. Invalid toggling on indicator or RFU bits are
ignored.
Executing the command with zero as payload or in the OPEN state will return the current
register settings. The chip will reply to a successful ChangeStatus with an extended
preamble regardless of the TRext value of the Query command.
After sending a ChangeConfig an interrogator shall transmit CW for less than TReply or
20ms, where TReply is the time between the interrogator's ChangeConfig command and
the chip’s backscattered reply. An interrogator may observe three possible responses
after sending a ChangeConfig, depending on the success or failure of the operation
• ChangeConfig succeeded: The chip will backscatter the reply shown above
comprising a header (a 0-bit), the current Config-Word setting, the handle, and a
CRC-16 calculated over the 0-bit, the Config-Word and the handle. If the interrogator
observes this reply within 20 ms then the ChangeConfig completed successfully.
• The chip encounters an error: The chip will backscatter an error code during the CW
period rather than the reply shown below (see EPCglobal Spec for error-code
definitions and for the reply format).
• ChangeConfig does not succeed: If the interrogator does not observe a reply within
20 ms then the ChangeConfig did not complete successfully. The interrogator may
issue a Req_RN command (containing the handle) to verify that the chip is still in the
interrogator's field, and may reissue the ChangeConfig command.SL3S1003_1013 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 3.6 — 17 October 2014
201236 21 of 43
NXP Semiconductors SL3S1003_1013
UCODE G2iM and G2iM+
The UCODE G2iM configuration word (Config-Word) is located at address 200h of the
EPC memory and is structured as following:
The configuration word contains three different type of bits:
• Indicator bits cannot be changed by command:
Tag Tamper Alarm Indicator
External Supply Indicator (digital input)
• Temporary bits are reset at power up:
Invert Output
Transparent Mode on/off
Data Mode data/raw
• Permanent bits: permanently stored bits in the memory
Conditional Read Range Reduction on/off
Conditional Read Range Reduction short/open
Max. Backscatter Strength
Digital Output
Read Range Reduction
Read Protect User Memory
Read Protect EPC
Read Protect TID
PSF Alarm
Table 13. Address 200h to 207h
Indicator bits Temporary bits Permanent bits
Tamper
indicator
External supply
indicator
RFU RFU Invert Output Transparent
mode
on/off
Data mode
data/raw
Conditional Read
Range Reduction
on/off
0 1 2 34 5 6 7
Table 14. Address 208h to 20Fh
Permanent bits
Conditional
Read Range
Reduction
open/short
max. backscatter
strength
Digital
output
Read
Range
Reduction
Protect UM Protect EPC Protect TID PSF Alarm
bit
8 9 10 11 12 13 14 15SL3S1003_1013 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 3.6 — 17 October 2014
201236 22 of 43
NXP Semiconductors SL3S1003_1013
UCODE G2iM and G2iM+
10.7.3 UCODE G2iM+ memory configuration control mechanism
The segmented user memory available in the UCODE G2iM+ enables a flexible
configuration of the device with respect to EPC size and access rights to the User
Memory.
The standard configuration offers 256 bit EPC memory and 512 bit open User Memory for
UCODE G2iM and 128 bit EPC memory and 640 bit open User Memory for UCODE
G2iM+. For applications where more EPC memory is required the UCODE G2iM+ offers
the flexibility to extend the 128 bit EPC up to 448 bit (in steps of 64 bit) by reducing the
User Memory size accordingly. See Table 15 and Table 17.
Beside the possibility to extend the EPC memory the UCDOE G2iM+ offers the possibility
to segment the User Memory in up to three areas with different access rights.
• Open: no read/write protection
• Protected: read/write protected by the Access Password
• Private: read/write protected by the User Password (see Section 10.7.4)
Table 15. EPC / User Memory Standard Configuration (UCODE G2iM)
EPC Memory User Memory
Open
256 bit 512 bit
Table 16. EPC / User Memory Standard Configuration (UCODE G2iM+)
EPC Memory User Memory
Open
128 bit 640 bit
Table 17. EPC / User Memory Max. EPC Configuration (UCODE G2iM+)
EPC Memory User Memory
Open
448 bit 320 bitSL3S1003_1013 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 3.6 — 17 October 2014
201236 23 of 43
NXP Semiconductors SL3S1003_1013
UCODE G2iM and G2iM+
The memory configuration can be defined one time, by programming the memory
configuration word, at the initialization of the UCODE G2iM+. The UCODE G2iM+
Memory Configuration Word (Mem-Config-Word) is located at address 1F0h of the EPC
memory and is structured as following:
• RFU-Bits:
The four RFU bits are fixed to 0000b. These four bits are ignored for access
commands (e.g. WRITE).
• Number of EPC blocks:
The 4 bit of this region specify the number of blocks (max. 5) which should be added
on top of the standard EPC Memory of 128bit.
• Number of Protected memory blocks:
The 4 bit of this region specify the number of blocks which should be used for the
Protected memory region.
• Number of Private memory blocks:
The 4 bit of this region specify the number of blocks which should be used for the
Private memory region.
The total amount of User Memory is defined by the number of blocks for EPC-, Open-,
Protected- and Private- memory area. Based on the total User Memory size (640 bit) and
the defined block size of 64 bit, the overall number of blocks results in ten blocks. As
described in the examples (Table 19 to Table 21) below the blocks used for the EPC-,
Open-, Protected- or Private segment can be exchanged according to the application
requirements as long as the overall block number is below ten.
The number of blocks allocated to the Open Memory Area are defined by the number of
blocks specified in the Mem-Config-Word, therefore the size of the Open Memory area is
derived by subtracting the number of defined blocks (Mem-Config-Word) from the total
available number of blocks of the User Memory (10 blocks). Undefined blocks are always
added to the Open Memory area.
In case an invalid total amount of blocks (exceeds ten) is written to the Mem-Config-Word,
the configuration fails and the error code (Locked Memory) will be returned.
The entire Mem-Config-Word is selectable (using the standard EPC SELECT command),
as well as single bits, and can be read using standard EPC READ command and modified
using the standard EPC WRITE command.
NOTE:
THE MEM-CONFIG-WORD IS ONE TIME PROGRAMMABLE.
Programming has be performed in the secured state.
In case no programming of the memory configuration word is done at the initialization of
the UCODE G2iM+ it will be automatically locked upon a lock of any part of the memory.
The following tables will provide a few examples for different memory configurations.
Table 18. Memory Configuration Word, Address 1F0h to 1FFh
RFU Number
of EPC blocks
Number of
Protected memory blocks
Number of
Private memory blocks
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15SL3S1003_1013 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 3.6 — 17 October 2014
201236 24 of 43
NXP Semiconductors SL3S1003_1013
UCODE G2iM and G2iM+
• Standard EPC size, 4 blocks Protected and 3 blocks Private memory which results in
3 blocks Open memory.
(Mem-Config-Word value: 0043h)
See Table 19
• Standard EPC size, 3 blocks Protected memory which results in 7 blocks Open
memory. (Mem-Config-Word value: 0030h).
See Table 20
• 192 bit EPC (1 block EPC added), 6 blocks Private memory which results in 4 blocks
Open memory. (Mem-Config-Word value: 0106h)
See Table 21
10.7.4 Private Memory Segment
The Private memory is a part of the User Memory which can be accessed out of the
secured state only. Private regions will appear as non existent to not authorized users.
The address of the location of the User Password is not fixed and has therefore to be
calculated based on the applied memory configuration.
The 32 bit User Password is located at the end of the User Memory. Since the UCODE
G2iM+ memory is configurable and can be segmented the address location of the User
Password depends on the Memory configuration done at the initialization.
User Password address calculation:
HEX[(Total number of memory blocks - blocks appointed to EPC)*Blocksize)]
Example:
EPC length: 192
This means that 1 block from the User Memory is required (128 bit + 64 bit)
HEX[(101)*64]=HEX[9*64]=HEX[384]=240h
Therefore the User Password for this configuration is located at address 240h to 25Fh
Table 19. User Memory Configuration with 3 segments
EPC Memory User Memory
Open Protected Private
128 bit 192 bit 256 bit 192 bit
Table 20. User Memory Configuration with 2 segments (no Private segment)
EPC Memory User Memory
Open Protected
128 bit 448 bit 192 bit
Table 21. User Memory Configuration with 2 areas (no Access password protected area)
EPC Memory User Memory
Open Private
192 bit 192 bit 384 bitSL3S1003_1013 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 3.6 — 17 October 2014
201236 25 of 43
NXP Semiconductors SL3S1003_1013
UCODE G2iM and G2iM+
10.7.5 ReadProtect2
The UCODE G2iM ReadProtect custom command enables reliable read protection of the
entire UCODE G2iM memory. Executing ReadProtect from the Secured state will set the
ProtectEPC and ProtectTID bits of the Configuration Word to '1'. With the ReadProtect-Bit
set the UCODE G2iM will continue to work unaffected but veil its protected content.
The read protection can be removed by executing Reset ReadProtect. The
ReadProtect-Bits will than be cleared.
Devices whose access password is zero will ignore the command. A frame-sync must be
pre-pended the command.
After sending the ReadProtect command an interrogator shall transmit CW for the lesser
of TReply or 20 ms, where TReply is the time between the interrogator's ReadProtect
command and the backscattered reply. An interrogator may observe three possible
responses after sending a ReadProtect, depending on the success or failure of the
operation:
• ReadProtect succeeds: After completing the ReadProtect the UCODE G2iM shall
backscatter the reply shown in Table 23 comprising a header (a 0-bit), the tag's
handle, and a CRC-16 calculated over the 0-bit and handle. Immediately after this
reply the UCODE G2iM will render itself to this ReadProtect mode. If the interrogator
observes this reply within 20 ms then the ReadProtect completed successfully.
• The UCODE G2iM encounters an error: The UCODE G2iM will backscatter an error
code during the CW period rather than the reply shown in the EPCglobal Spec (see
Annex I for error-code definitions and for the reply format).
• ReadProtect does not succeed: If the interrogator does not observe a reply within
20 ms then the ReadProtect did not complete successfully. The interrogator may
issue a Req_RN command (containing the handle) to verify that the UCODE G2iM is
still in the interrogation zone, and may re-initiate the ReadProtect command.
The UCODE G2iM reply to the ReadProtect command will use the extended preamble
shown in EPCglobal Spec (Figure 6.11 or Figure 6.15), as appropriate (i.e. a Tag shall
reply as if TRext=1) regardless of the TRext value in the Query that initiated the round.
2. Note: The ChangeConfig command can be used instead of “ReadProtect”, “ResetReadProtect”, “ChangeEAS”.
Table 22. ReadProtect command
Command RN CRC-16
# of bits 16 16 16
description 11100000 00000001 handle -
Table 23. UCODE G2iM reply to a successful ReadProtect procedure
Header RN CRC-16
# of bits 1 16 16
description 0 handle -SL3S1003_1013 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 3.6 — 17 October 2014
201236 26 of 43
NXP Semiconductors SL3S1003_1013
UCODE G2iM and G2iM+
10.7.6 Reset ReadProtect2
Reset ReadProtect allows an interrogator to clear the ProtectEPC and ProtectTID bits of
the Configuration Word. This will re-enable reading of the related UCODE G2iM memory
content.
For details on the command response please refer to Table 25 “Reset ReadProtect
command”.
After sending a Reset ReadProtect an interrogator shall transmit CW for the lesser of
TReply or 20 ms, where TReply is the time between the interrogator's Reset ReadProtect
command and the UCODE G2iM backscattered reply. A Req_RN command prior to the
Reset ReadProtect is necessary to successfully execute the command. A frame-sync
must be pre-pended the command.
An interrogator may observe three possible responses after sending a Reset
ReadProtect, depending on the success or failure of the operation:
• Reset ReadProtect succeeds: After completing the Reset ReadProtect a UCODE
G2iM will backscatter the reply shown in Table 26 comprising a header (a 0-bit), the
handle, and a CRC-16 calculated over the 0-bit and handle. If the interrogator
observes this reply within 20 ms then the Reset ReadProtect completed successfully.
• The UCODE G2iM encounters an error: The UCODE G2iM will backscatter an error
code during the CW period rather than the reply shown in Table 26 (see EPCglobal
Spec for error-code definitions and for the reply format).
• Reset ReadProtect does not succeed: If the interrogator does not observe a reply
within 20 ms then the Reset ReadProtect did not complete successfully. The
interrogator may issue a Req_RN command (containing the handle) to verify that the
G2iM is still in the interrogation zone, and may reissue the Reset ReadProtect
command.
The UCODE G2iM reply to the Reset ReadProtect command will use the extended
preamble shown in EPCglobal Spec (Figure 6.11 or Figure 6.15), as appropriate (i.e. a
UCODE G2iM will reply as if TRext=1 regardless of the TRext value in the Query that
initiated the round.
Table 24. ReadProtect command-response table
Starting State Condition Response Next State
ready all – ready
arbitrate, reply,
acknowledged
all – arbitrate
open all - open
secured valid handle & invalid
access password
– arbitrate
valid handle & valid
non zero access
password
Backscatter handle,
when done
secured
invalid handle – secured
killed all – killedSL3S1003_1013 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 3.6 — 17 October 2014
201236 27 of 43
NXP Semiconductors SL3S1003_1013
UCODE G2iM and G2iM+
The Reset ReadProtect command is structured as following:
• 16 bit command
• Password: 32 bit Access-Password XOR with 2 times current RN16
Remark: To generate the 32 bit password the 16 bit RN16 is duplicated and used two
times to generate the 32 bit (e.g. a RN16 of 1234 will result in 1234 1234).
• 16 bit handle
• CRC-16 calculate over the first command-code bit to the last handle bit
Table 25. Reset ReadProtect command
Command Password RN CRC-16
# of bits 16 32 16 16
description 11100000
00000010
(access
password)
2*RN16
handle -
Table 26. UCODE G2iM reply to a successful Reset ReadProtect command
Header RN CRC-16
# of bits 1 16 16
description 0 handle -
Table 27. Reset ReadProtect command-response table
Starting State Condition Response Next State
ready all – ready
arbitrate, reply,
acknowledged
all – arbitrate
open valid handle & valid access password Backscatter handle,
when done
open
valid handle & invalid access password – arbitrate
invalid handle – open
secured valid handle & valid access password Backscatter handle,
when done
secured
valid handle & invalid access password – arbitrate
invalid handle – secured
killed all – killedSL3S1003_1013 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 3.6 — 17 October 2014
201236 28 of 43
NXP Semiconductors SL3S1003_1013
UCODE G2iM and G2iM+
10.7.7 ChangeEAS2
UCODE G2iM equipped RFID tags will also feature a stand-alone operating EAS alarm
mechanism for fast and offline electronic article surveillance. The PSF bit of the
Config-Word directly relates to the EAS Alarm feature. With an PSF bit set to '1' the tag
will reply to an EAS_Alarm command by backscattering a 64 bit alarm code without the
need of a Select or Query. The EAS is a built-in solution so no connection to a backend
database is required. In case the EAS_Alarm command is not implemented in the reader
a standard EPC SELCET to the Config-Word and Query can be used. When using
standard SELECT/QUERY the EPC will be returned during inventory.
ChangeEAS can be executed from the Secured state only. The command will be ignored
if the Access Password is zero, the command will also be ignored with an invalid CRC-16
or an invalid handle, the UCODE G2iM will than remain in the current state. The CRC-16
is calculated from the first command-code bit to the last handle bit. A frame-sync must be
pre-pended the command.
The UCODE G2iM reply to a successful ChangeEAS will use the extended preamble, as
appropriate (i.e. a Tag shall reply as if TRext=1) regardless of the TRext value in the
Query that initiated the round.
After sending a ChangeEAS an interrogator shall transmit CW for less than TReply or
20 ms, where TReply is the time between the interrogator's ChangeEAS command and
the UCODE G2iM backscattered reply. An interrogator may observe three possible
responses after sending a ChangeEAS, depending on the success or failure of the
operation
• ChangeEAS succeeds: After completing the ChangeEAS a UCODE G2iM will
backscatter the reply shown in Table 29 comprising a header (a 0-bit), the handle, and
a CRC-16 calculated over the 0-bit and handle. If the interrogator observes this reply
within
20 ms then the ChangeEAS completed successfully.
• The UCODE G2iM encounters an error: The UCODE G2iM will backscatter an error
code during the CW period rather than the reply shown in Table 29 (see EPCglobal
Spec for error-code definitions and for the reply format).
• ChangeEAS does not succeed: If the interrogator does not observe a reply within
20 ms then the ChangeEAS did not complete successfully. The interrogator may
issue a Req_RN command (containing the handle) to verify that the G2iM is still in the
interrogator's field, and may reissue the ChangeEAS command.
Upon receiving a valid ChangeEAS command a G2iM will perform the commanded
set/reset operation of the PSF bit of the Configuration Word.
If PSF bit is set, the EAS_Alarm command will be available after the next power up and
reply the 64 bit EAS code upon execution. Otherwise the EAS_Alarm command will be
ignored.
Table 28. ChangeEAS command
Command ChangeEas RN CRC-16
# of bits 16 1 16 16
description 11100000
00000011
1 ... set PSF bit
0 ... reset PSF bit
handleSL3S1003_1013 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 3.6 — 17 October 2014
201236 29 of 43
NXP Semiconductors SL3S1003_1013
UCODE G2iM and G2iM+
10.7.8 EAS_Alarm
Upon receiving an EAS_Alarm custom command the UCODE G2iM will immediately
backscatter an EAS-Alarmcode in case the PSF bit of the Config-Word is set. The alarm
code is returned without any delay caused by Select, Query and without the need for a
backend database.
The EAS feature of the UCODE G2iM is available after enabling it by sending a
ChangeEAS command described in Section 10.7.7 “ChangeEAS2” or after setting the
PSF bit of the Config-Word to ’1’. With the EAS-Alarm enabled the UCODE G2iM will
reply to an EAS_Alarm command by backscattering a fixed 64 bit alarm code. A UCODE
G2iM will reply to an EAS_Alarm command from the ready state only. As an alternative to
the fast EAS_Alarm command a standard SELECT (upon the Config-Word) and QUERY
can be used.
If the PSF bit is reset to '0' by sending a ChangeEAS command in the password protected
Secure state or clearing the PSF bit the UCODE G2iM will not reply to an EAS_Alarm
command.
The EAS_Alarm command is structured as following:
• 16 bit command
• 16 bit inverted command
• DR (TRcal divide ratio) sets the T=>R link frequency as described in EPCglobal Spec.
6.3.1.2.8 and Table 6.9.
• M (cycles per symbol) sets the T=>R data rate and modulation format as shown in
EPCglobal Spec. Table 6.10.
• TRext chooses whether the T=>R preamble is pre-pended with a pilot tone as
described in EPCglobal Spec. 6.3.1.3.
A preamble must be pre-pended the EAS_Alarm command according EPCglobal Spec,
6.3.1.2.8.
Table 29. UCODE G2iM reply to a successful ChangeEAS command
Header RN CRC-16
# of bits 1 16 16
description 0 handle -
Table 30. ChangeEAS command-response table
Starting State Condition Response Next state
ready all – ready
arbitrate, reply,
acknowledged
all – arbitrate
open all – open
secured valid handle backscatter handle,
when done
secured
invalid handle – secured
killed all – killedSL3S1003_1013 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 3.6 — 17 October 2014
201236 30 of 43
NXP Semiconductors SL3S1003_1013
UCODE G2iM and G2iM+
Upon receiving an EAS_Alarm command the tag loads the CRC5 register with 01001b
and backscatters the 64 bit alarm code accordingly. The reader is now able to calculate
the CRC5 over the backscattered 64 bits received to verify the received code.
Table 31. EAS_Alarm command
Command Inv_Command DR M TRext CRC-16
# of bits 16 16 1 2 1 16
description 11100000
00000100
00011111
11111011
0: DR=8
1: DR=64/3
00: M=1
01: M=2
10: M=4
11: M=8
0: no pilot
tone
1: use pilot
tone
-
Table 32. UCODE G2iM reply to a successful EAS_Alarm command
Header EAS Code
# of bits 1 64
description 0 CRC5 (MSB)
Table 33. EAS_Alarm command-response table
Starting State Condition Response Next state
ready PSF bit is set
PSF bit is cleard
backscatter alarm code
--
ready
arbitrate, reply,
acknowledged
all – arbitrate
open all – open
secured all – secured
killed all – killedSL3S1003_1013 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 3.6 — 17 October 2014
201236 31 of 43
NXP Semiconductors SL3S1003_1013
UCODE G2iM and G2iM+
11. Limiting values
[1] Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the
device. This is a stress rating only and functional operation of the device at these or any conditions other
than those described in the Operating Conditions and Electrical Characteristics section of this specification
is not implied.
[2] This product includes circuitry specifically designed for the protection of its internal devices from the
damaging effects of excessive static charge. Nonetheless, it is suggested that conventional precautions be
taken to avoid applying greater than the rated maxima.
[3] For ESD measurement, the die chip has been mounted into a CDIP20 package.
Table 34. Limiting values[1][2]
In accordance with the Absolute Maximum Rating System (IEC 60134).
Voltages are referenced to RFN
Symbol Parameter Conditions Min Max Unit
Bare die limitations
Tstg storage temperature 55 +125 C
Tamb ambient temperature 40 +85 C
VESD electrostatic discharge
voltage
Human body
model
[3] - ±2 kV
Pad limitations
Vi input voltage absolute limits,
VDD-OUT pad
0.5 +2.5 V
Io output current absolute limits
input/output
current, VDD-OUT
pad
0.5 +0.5 mA
Pi input power maximum power
dissipation, RFP
pad
- 100 mWSL3S1003_1013 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 3.6 — 17 October 2014
201236 32 of 43
NXP Semiconductors SL3S1003_1013
UCODE G2iM and G2iM+
12. Characteristics
12.1 UCODE G2iM and UCODE G2iM+ bare die characteristics
[1] Power to process a Query command.
[2] Measured with a 50 source impedance.
[3] At minimum operating power.
[4] It has to be assured the reader (system) is capable of providing enough field strength to give +10 dBm at the chip otherwise
communication with the chip will not be possible.
[5] Enables tag designs to be within ETSI limits for return link data rates of e.g. 320 kHz/M4.
[6] Will result in up to 10 dB higher tag backscatter power at high field strength.
[7] Results in approx. 18 dBm tag sensitivity on a 2 dBi gain antenna.
Table 35. UCODE G2iM and UCODE G2iM+ RF interface characteristics (RFN, RFP)
Symbol Parameter Conditions Min Typ Max Unit
fi input frequency 840 - 960 MHz
Normal mode - no external supply, read range reduction OFF
Pi(min) minimum input power READ sensitivity [1][2][7] - 17.5 - dBm
Pi(min) minimum input power WRITE,
BLOCKWRITE
sensitivity, (write
range/read range -
ratio)
-
-
30
20
- %
Ci input capacitance parallel [3] - 0.77 - pF
Q quality factor 915 MHz [3] - 9.2 - -
Z impedance 866 MHz [3] - 27 j234 -
915 MHz [3] - 24 j222 -
953MHz [3] - 23 j213 -
External supply mode - VDD pad supplied, read range reduction OFF
Pi(min) minimum input power Ext. supplied READ [1][2] - 27 - dBm
Ext. supplied WRITE [2] - 27 - dBm
Z impedance externally supplied,
915 MHz
[3] - 8 -j228 -
Read range reduction ON - no external supply
Pi(min) minimum input power 4R on READ [1][2][4] - +10 - dBm
4R on WRITE [2][4] - +10 - dBm
Z impedance 4R on, 915 MHz [3] - 16 j1 -
Modulation resistance
R resistance modulation
resistance, max.
backscatter = off
[5] - 170 -
modulation
resistance, max.
backscatter = on
[6] - 55 - SL3S1003_1013 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 3.6 — 17 October 2014
201236 33 of 43
NXP Semiconductors SL3S1003_1013
UCODE G2iM and G2iM+
[1] Activates Digital Output (OUT pin), increases read range (external supplied).
[2] Activates Digital Output (OUT pin), increases read and write range (external supplied).
[3] Operating the chip outside the specified voltage range may lead to undefined behaviour.1925.
[4] Either the voltage or the current needs to be above given values to guarantee specified functionality.
[5] No proper operation is guaranteed if both, voltage and current, limits are exceeded.
[1] Is the sum of the allowed capacitance of the VDD and OUT pin referenced to RFN.
[2] Is the maximum allowed RF input voltage coupling to the VDD/OUT pin to guarantee undisturbed chip functionality.
[3] Resistance between VDD and OUT pin in checked during power up only.
[4] Resistance range to achieve tamper alarm flag = 1.
[5] Resistance range to achieve tamper alarm flag = 0:
Table 36. VDD pin characteristics
Symbol Parameter Conditions Min Typ Max Unit
Minimum supply voltage/current - without assisted EEPROM WRITE [1][3][4]
VDD supply voltage minimum voltage - - 1.8 V
IDD supply current minimum current,
Iout = 0 mA
- - 14 mA
Iout = 100 mA - - 120 mA
Minimum supply voltage/current - assisted EEPROM READ and WRITE [2][3][4]
VDD supply voltage minimum voltage,
Iout = 0 mA
- 1.8 1.85 V
Iout = 100 mA - - 1.95 V
IDD supply current minimum current,
Iout = 0 mA
- - 135 mA
Iout = 100 mA - - 265 mA
Maximum supply voltage/current [3][5]
VDD supply voltage absolute maximum
voltage
2.2 - - V
Ii(max) maximum input current absolute maximum
current
280 - - mA
Table 37. G2iM, G2iM+ VDD and OUT pin characteristics
Symbol Parameter Conditions Min Typ Max Unit
OUT pin characteristics
VOL Low-level output voltage Isink = 1mA - - 100 mV
VOH HIGH-level output voltage VDD = 1.8 V; Isource
= 100µA
1.5 - - V
VDD/OUT pin characteristics
CL load capacitance VDD - OUT pin max. [1] - - 5 pF
Vo output voltage maximum RF peak
voltage on VDD-OUT
pins
[2] - - 500 mV
VDD/OUT pin tamper alarm characteristics [3]
RL(max) maximum load resistance resistance range high [4] - - <2 M
RL(min) minimum load resistance resistance range low [5] >20 - - MSL3S1003_1013 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 3.6 — 17 October 2014
201236 34 of 43
NXP Semiconductors SL3S1003_1013
UCODE G2iM and G2iM+
[1] Tamb 25 C
12.2 UCODE G2iM+ SOT886 characteristics
[1] Power to process a Query command.
[2] Measured with a 50 source impedance.
[3] At minimum operating power.
Remark: For DC and memory characteristics refer to Table 36, Table 37 and Table 38.
Table 38. UCODE G2iM and UCODE G2iM+ memory characteristics
Symbol Parameter Conditions Min Typ Max Unit
EEPROM characteristics
tret retention time Tamb 55 C 20 - - year
Nendu(W) write endurance 1000 10000[1] - cycle
Table 39. G2iM+ RF interface characteristics (RFN, RFP)
Symbol Parameter Conditions Min Typ Max Unit
Normal mode - no external supply, read range reduction OFF
Pi(min) minimum input power READ
sensitivity
[1][2] - 17.6 - dBm
Z impedance 915 MHz [3] - 21.2 -j199.7 -
Normal mode - externally supply VDD = 1.8V, read range reduction OFF
Z impedance 915 MHz [3] - 6.9 -j205.5 - SL3S1003_1013 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 3.6 — 17 October 2014
201236 35 of 43
NXP Semiconductors SL3S1003_1013
UCODE G2iM and G2iM+
13. Package outline
Fig 8. Package outline SOT886
terminal 1
index area
OUTLINE REFERENCES
VERSION
EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC JEITA
SOT886 MO-252
SOT886
04-07-15
04-07-22
DIMENSIONS (mm are the original dimensions)
XSON6: plastic extremely thin small outline package; no leads; 6 terminals; body 1 x 1.45 x 0.5 mm
D
E
e1
e
A1
b
L L 1
e1
0 1 2 mm
scale
Notes
1. Including plating thickness.
2. Can be visible in some manufacturing processes.
UNIT
mm 0.25
0.17
1.5
1.4
0.35
0.27
A1 max b E
1.05
0.95
D e e1 L
0.40
0.32
L1
0.50.6
A(1)
max
0.5 0.04
1
6
2
5
3
4
6×
(2)
4×
(2)
ASL3S1003_1013 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 3.6 — 17 October 2014
201236 36 of 43
NXP Semiconductors SL3S1003_1013
UCODE G2iM and G2iM+
14. Handling information
14.1 Assembly conditions
14.1.1 General assembly recommendations
While pads OUT and VDD are not used for UCODE G2iM (SL3S1003), they are still
electrically active and therefore must not be connected to the antenna and the RFN and
RFP pads.
In case of any doubts, the customer is constrained to contact NXP Semiconductors for
further clarification.
14.1.2 Label converting
Generally, an optimization of the entire lamination process by label manufacturer is
recommended in order to minimize the stress onto the module and guarantee high
assembly yield. Roller diameter must not be smaller than 45 mm.
15. Packing information
15.1 Wafer
See Ref. 20 “Data sheet - Delivery type description – General specification for 8” wafer on
UV-tape with electronic fail die marking, BU-ID document number: 1093**”SL3S1003_1013 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 3.6 — 17 October 2014
201236 37 of 43
NXP Semiconductors SL3S1003_1013
UCODE G2iM and G2iM+
16. Abbreviations
Table 40. Abbreviations
Acronym Description
CRC Cyclic Redundancy Check
CW Continuous Wave
DC Direct Current
EAS Electronic Article Surveillance
EEPROM Electrically Erasable Programmable Read Only Memory
EPC Electronic Product Code (containing Header, Domain Manager, Object Class
and Serial Number)
ESD ElectroStatic Discharge
FCS Flip Chip Strap
FM0 Bi phase space modulation
G2 Generation 2
HBM Human Body Model
IC Integrated Circuit
PSF Product Status Flag
PCB Printed Circuit Board
RF Radio Frequency
UHF Ultra High Frequency
TID Tag IDentifier SL3S1003_1013 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 3.6 — 17 October 2014
201236 38 of 43
NXP Semiconductors SL3S1003_1013
UCODE G2iM and G2iM+
17. References
[1] EPCglobal: EPC Radio-Frequency Identity Protocols Class-1 Generation-2 UHF
RFID Protocol for Communications at 860 MHz – 960 MHz, Version 1.1.0
(December 17, 2005)
[2] EPCglobal: EPC Tag Data Standards
[3] EPCglobal (2004): FMCG RFID Physical Requirements Document (draft)
[4] EPCglobal (2004): Class-1 Generation-2 UHF RFID Implementation Reference
(draft)
[5] European Telecommunications Standards Institute (ETSI), EN 302 208:
Electromagnetic compatibility and radio spectrum matters (ERM) – Radio-frequency
identification equipment operating in the band 865 MHz to 868 MHz with power
levels up to 2 W, Part 1 – Technical characteristics and test methods
[6] European Telecommunications Standards Institute (ETSI), EN 302 208:
Electromagnetic compatibility and radio spectrum matters (ERM) – Radio-frequency
identification equipment operating in the band 865 MHz to 868 MHz with power
levels up to 2 W, Part 2 – Harmonized EN under article 3.2 of the R&TTE directive
[7] [CEPT1]: CEPT REC 70-03 Annex 1
[8] [ETSI1]: ETSI EN 330 220-1, 2
[9] [ETSI3]: ETSI EN 302 208-1, 2 V<1.1.1> (2004-09-Electromagnetic compatibility
And Radio spectrum Matters (ERM) Radio Frequency Identification Equipment
operating in the band 865 - MHz to 868 MHz with power levels up to 2 W Part 1:
Technical characteristics and test methods.
[10] [FCC1]: FCC 47 Part 15 Section 247
[11] ISO/IEC Directives, Part 2: Rules for the structure and drafting of International
Standards
[12] ISO/IEC 3309: Information technology – Telecommunications and information
exchange between systems – High-level data link control (HDLC) procedures –
Frame structure
[13] ISO/IEC 15961: Information technology, Automatic identification and data capture –
Radio frequency identification (RFID) for item management – Data protocol:
application interface
[14] ISO/IEC 15962: Information technology, Automatic identification and data capture
techniques – Radio frequency identification (RFID) for item management – Data
protocol: data encoding rules and logical memory functions
[15] ISO/IEC 15963: Information technology — Radio frequency identification for item
management — Unique identification for RF tags
[16] ISO/IEC 18000-1: Information technology — Radio frequency identification for item
management — Part 1: Reference architecture and definition of parameters to be
standardized
[17] ISO/IEC 18000-6: Information technology automatic identification and data capture
techniques — Radio frequency identification for item management air interface —
Part 6: Parameters for air interface communications at 860–960 MHz
[18] ISO/IEC 19762: Information technology AIDC techniques – Harmonized vocabulary
– Part 3: radio-frequency identification (RFID) SL3S1003_1013 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 3.6 — 17 October 2014
201236 39 of 43
NXP Semiconductors SL3S1003_1013
UCODE G2iM and G2iM+
[19] U.S. Code of Federal Regulations (CFR), Title 47, Chapter I, Part 15:
Radio-frequency devices, U.S. Federal Communications Commission.
[20] Data sheet - Delivery type description – General specification for 8” wafer on
UV-tape with electronic fail die marking, BU-ID document number: 1093**3
3. ** ... document version numberSL3S1003_1013 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 3.6 — 17 October 2014
201236 40 of 43
NXP Semiconductors SL3S1003_1013
UCODE G2iM and G2iM+
18. Revision history
Table 41. Revision history
Document ID Release date Data sheet status Change notice Supersedes
SL2S1003_1013 v. 3.6 20141017 Product data sheet - SL2S1003_1013 v. 3.5
Modifications: • Table 21 “User Memory Configuration with 2 areas (no Access password protected area)”:
corrected
• Table 39 “G2iM+ RF interface characteristics (RFN, RFP)”: corrected
SL2S1003_1013 v. 3.5 20131107 Product data sheet - SL2S1003_1013 v. 3.4
Modifications: • Table 1 “Ordering information”: updated
• Table 2 “Marking codes”: updated
• Section 2.2 “Key benefits”: title updated
• Table 39 “G2iM+ RF interface characteristics (RFN, RFP)”: title updated
SL2S1003_1013 v. 3.4 20120227 Product data sheet - SL2S1003_1013 v. 3.3
Modifications: • Figure 4 “SL3S10x3 wafer layout”: Figure notes (1) and (2) updated
SL2S1003_1013 v. 3.3 20120130 Product data sheet SL2S1003_1013 v. 3.2
Modifications: • Section 14 “Handling information”: added
SL2S1003_1013 v. 3.2 20120111 Product data sheet - SL2S1003_1013 v. 3.1
Modifications: • Section 8.1 “Wafer layout”: figure notes (1), (2), (8) and (9) updated
SL2S1003_1013 v. 3.1 20111117 Product data sheet - SL2S1003_1013 v. 3.0
Modifications: • Security status changed into COMPANY PUBLIC
• Package delivery form SOT886 added
• Section 5 “Marking”, Section 13 “Package outline”: added
SL2S1003_1013 v. 3.0 20110503 Product data sheet - SL2S1003_1013 v. 2.0
Modifications: • Specification status changed into product
• Some EPC bit values changed
• Table 16 added
SL2S1003_1013 v. 2.0 20110415 Preliminary data sheet - -SL3S1003_1013 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 3.6 — 17 October 2014
201236 41 of 43
NXP Semiconductors SL3S1003_1013
UCODE G2iM and G2iM+
19. Legal information
19.1 Data sheet status
[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
19.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to offer functions and qualities beyond those described in the
Product data sheet.
19.3 Disclaimers
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information. NXP Semiconductors takes no
responsibility for the content in this document if provided by an information
source outside of NXP Semiconductors.
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors and its suppliers accept no liability for
inclusion and/or use of NXP Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at the customer’s own
risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and operation of their applications
and products using NXP Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or customer product
design. It is customer’s sole responsibility to determine whether the NXP
Semiconductors product is suitable and fit for the customer’s applications and
products planned, as well as for the planned application and use of
customer’s third party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks associated with their
applications and products.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
third party customer(s). Customer is responsible for doing all necessary
testing for the customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications and
the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Document status[1][2] Product status[3] Definition
Objective [short] data sheet Development This document contains data from the objective specification for product development.
Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.
Product [short] data sheet Production This document contains the product specification. SL3S1003_1013 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 3.6 — 17 October 2014
201236 42 of 43
NXP Semiconductors SL3S1003_1013
UCODE G2iM and G2iM+
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Non-automotive qualified products — Unless this data sheet expressly
states that this specific NXP Semiconductors product is automotive qualified,
the product is not suitable for automotive use. It is neither qualified nor tested
in accordance with automotive testing or application requirements. NXP
Semiconductors accepts no liability for inclusion and/or use of
non-automotive qualified products in automotive equipment or applications.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards, customer
(a) shall use the product without NXP Semiconductors’ warranty of the
product for such automotive applications, use and specifications, and (b)
whenever customer uses the product for automotive applications beyond
NXP Semiconductors’ specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies NXP Semiconductors for any
liability, damages or failed product claims resulting from customer design and
use of the product for automotive applications beyond NXP Semiconductors’
standard warranty and NXP Semiconductors’ product specifications.
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
19.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
UCODE — is a trademark of NXP Semiconductors N.V.
20. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.comNXP Semiconductors SL3S1003_1013
UCODE G2iM and G2iM+
© NXP Semiconductors N.V. 2014. All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 17 October 2014
201236
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
21. Contents
1 General description . . . . . . . . . . . . . . . . . . . . . . 1
2 Features and benefits . . . . . . . . . . . . . . . . . . . . 1
2.1 Key features . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
2.1.1 Memory. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
2.2 Key benefits . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
2.2.1 End user benefit . . . . . . . . . . . . . . . . . . . . . . . . 2
2.2.2 Antenna design benefits . . . . . . . . . . . . . . . . . . 2
2.2.3 Label manufacturer benefit. . . . . . . . . . . . . . . . 2
2.3 Custom commands. . . . . . . . . . . . . . . . . . . . . . 3
3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
3.1 Markets. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
3.2 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
4 Ordering information. . . . . . . . . . . . . . . . . . . . . 4
5 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
6 Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . 5
7 Pinning information. . . . . . . . . . . . . . . . . . . . . . 6
7.1 Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 6
8 Wafer layout . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
8.1 Wafer layout . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
9 Mechanical specification . . . . . . . . . . . . . . . . . 8
9.1 Wafer specification . . . . . . . . . . . . . . . . . . . . . . 8
9.1.1 Wafer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
9.1.2 Fail die identification . . . . . . . . . . . . . . . . . . . . 9
9.1.3 Map file distribution. . . . . . . . . . . . . . . . . . . . . . 9
10 Functional description . . . . . . . . . . . . . . . . . . 10
10.1 Air interface standards . . . . . . . . . . . . . . . . . . 10
10.2 Power transfer . . . . . . . . . . . . . . . . . . . . . . . . 10
10.3 Data transfer. . . . . . . . . . . . . . . . . . . . . . . . . . 10
10.3.1 Reader to tag Link . . . . . . . . . . . . . . . . . . . . . 10
10.3.2 Tag to reader Link. . . . . . . . . . . . . . . . . . . . . . 10
10.4 UCODE G2iM and UCODE G2iM+ differences 11
10.5 Supported commands . . . . . . . . . . . . . . . . . . 11
10.6 UCODE G2iM and UCODE G2iM+ memory . 12
10.6.1 UCODE G2iM and UCODE G2iM+ overall
memory map. . . . . . . . . . . . . . . . . . . . . . . . . . 13
10.6.2 UCODE G2iM and UCODE G2iM+ TID
memory details . . . . . . . . . . . . . . . . . . . . . . . . 15
10.7 Custom commands. . . . . . . . . . . . . . . . . . . . . 16
10.7.1 ChangeConfig. . . . . . . . . . . . . . . . . . . . . . . . . 16
UCODE G2iM and UCODE G2iM+ special
features. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16
10.7.2 UCODE G2iM and UCODE G2iM+ special
features control mechanism . . . . . . . . . . . . . . 20
10.7.3 UCODE G2iM+ memory configuration control
mechanism . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
10.7.4 Private Memory Segment . . . . . . . . . . . . . . . . 24
10.7.5 ReadProtect . . . . . . . . . . . . . . . . . . . . . . . . . . 25
10.7.6 Reset ReadProtect2 . . . . . . . . . . . . . . . . . . . . 26
10.7.7 ChangeEAS2 . . . . . . . . . . . . . . . . . . . . . . . . . 28
10.7.8 EAS_Alarm . . . . . . . . . . . . . . . . . . . . . . . . . . 29
11 Limiting values . . . . . . . . . . . . . . . . . . . . . . . . 31
12 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . 32
12.1 UCODE G2iM and UCODE G2iM+ bare die
characteristics . . . . . . . . . . . . . . . . . . . . . . . . 32
12.2 UCODE G2iM+ SOT886 characteristics . . . . 34
13 Package outline. . . . . . . . . . . . . . . . . . . . . . . . 35
14 Handling information . . . . . . . . . . . . . . . . . . . 36
14.1 Assembly conditions . . . . . . . . . . . . . . . . . . . 36
14.1.1 General assembly recommendations . . . . . . 36
14.1.2 Label converting. . . . . . . . . . . . . . . . . . . . . . . 36
15 Packing information . . . . . . . . . . . . . . . . . . . . 36
15.1 Wafer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36
16 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . 37
17 References. . . . . . . . . . . . . . . . . . . . . . . . . . . . 38
18 Revision history . . . . . . . . . . . . . . . . . . . . . . . 40
19 Legal information . . . . . . . . . . . . . . . . . . . . . . 41
19.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 41
19.2 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . 41
19.3 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . 41
19.4 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . 42
20 Contact information . . . . . . . . . . . . . . . . . . . . 42
21 Contents. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 43
1. General description
NXP’s UCODE G2iL series transponder ICs offer leading-edge read range and support
industry-first features such as a Tag Tamper Alarm, Data Transfer, Digital Switch, and
advanced privacy-protection modes.
Very high chip sensitivity (18 dBm) enables longer read ranges with simple, single-port
antenna designs. When connected to a power supply, the READ as well as the WRITE
range can be boosted to a sensitivity of 27 dBm. In fashion and retail the UCODE G2iL
series improve read rates and provide for theft deterrence. For consumer electronics the
UCODE G2iL series is suited for device configuration, activation, production control, and
PCB tagging. In authentication applications the transponders can be used to protect
brands and guard against counterfeiting. They can also be used to tag containers,
electronic vehicles, airline baggage, and more.
In addition to the EPC specifications the G2iL offers an integrated Product Status Flag
(PSF) feature and read protection of the memory content.
On top of the G2iL features the G2iL+ offers an integrated tag tamper alarm, RF field
detection, digital switch, external supply mode, read range reduction and data transfer
mode.
2. Features and benefits
2.1 Key features
UHF RFID Gen2 tag chip according EPCglobal v1.2.0 with 128 bit EPC memory
Memory read protection
Integrated Product Status Flag (PSF)
Tag tamper alarm
RF field detection
Digital switch
Data transfer mode
Real Read Range Reduction (Privacy Mode)
External supply mode where both the READ & WRITE range are boosted to -27dBm
2.1.1 Memory
128-bit of EPC memory
64-bit Tag IDentifier (TID) including 32-bit factory locked unique serial number
32-bit kill password to permanently disable the tag
32-bit access password to allow a transition into the secured state
SL3S1203_1213
UCODE G2iL and G2iL+
Rev. 4.4 — 17 March 2014
178844
Product data sheet
COMPANY PUBLICSL3S1203_1213 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 4.4 — 17 March 2014
178844 2 of 37
NXP Semiconductors SL3S1203_1213
UCODE G2iL and G2iL+
Data retention: 20 years
Broad international operating frequency: from 840 MHz to 960 MHz
Long read/write ranges due to extremely low power design
Reliable operation of multiple tags due to advanced anti-collision
READ protection
WRITE Lock
Wide specified temperature range: 40 C up to +85 C
2.2 Key benefits
2.2.1 End user benefit
Prevention of unauthorized memory access through read protection
Indication of tag tampering attempt by use of the tag tamper alarm feature
Electronic device configuration and / or activation by the use of the digital switch / data
transfer mode
Theft deterrence supported by the PSF feature (PSF alarm or EPC code)
Small label sizes, long read ranges due to high chip sensitivity
Product identification through unalterable extended TID range, including a 32-bit serial
number
Reliable operation in dense reader and noisy environments through high interference
suppression
2.2.2 Antenna design benefits
High sensitivity enables small and cost efficient antenna designs
Low Q-Value eases broad band antenna design for global usage
2.2.3 Label manufacturer benefit
Consistent performance on different materials due to low Q-factor
Ease of assembly and high assembly yields through large chip input capacitance
Fast first WRITE of the EPC memory for fast label initialization
2.3 Custom commands
PSF Alarm
Built-in PSF (Product Status Flag), enables the UHF RFID tag to be used as EAS tag
(Electronic Article Surveillance) tag without the need for a back-end data base.
Read Protect
Protects all memory content including CRC16 from unauthorized reading.
ChangeConfig
Configures the additional features of the chip like external supply mode, tamper alarm,
digital switch, read range reduction or data transfer.
The UCODE G2iL is equipped with a number of additional features and custom
commands. Nevertheless, the chip is designed in a way standard EPCglobal
READ/WRITE/ACCESS commands can be used to operate the features. No custom
commands are needed to take advantage of all the features in case of unlocked EPC
memory.SL3S1203_1213 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 4.4 — 17 March 2014
178844 3 of 37
NXP Semiconductors SL3S1203_1213
UCODE G2iL and G2iL+
3. Applications
3.1 Markets
Fashion (Apparel and footwear)
Retail
Electronics
Fast Moving Consumer Goods
Asset management
Electronic Vehicle Identification
3.2 Applications
Supply chain management
Item level tagging
Pallet and case tracking
Container identification
Product authentication
PCB tagging
Cost efficient, low level seals
Wireless firmware download
Wireless product activation
Outside above mentioned applications, please contact NXP Semiconductors for support.
4. Ordering information
5. Marking
Table 1. Ordering information
Type number Package
Name IC type Description Version
SL3S1203FUF Wafer G2iL bumped die on sawn 8” 75 m wafer not applicable
SL3S1213FUF Wafer G2iL+ bumped die on sawn 8” 75 m wafer not applicable
SL3S1203FUD/BG Wafer G2iL bumped die on sawn 8” 120 m wafer,
7 m Polyimide spacer
not applicable
SL3S1213FUD/BG Wafer G2iL+ bumped die on sawn 8” 120 m wafer,
7 m Polyimide spacer
not applicable
SL3S1203FTB0 XSON6 G2iL plastic extremely thin small outline package;
no leads; 6 terminals; body 1 1.45 0.5 mm
SOT886F1
Table 2. Marking codes
Type number Marking code Comment Version
SL3S1203FTB0 UN UCODE G2iL SOT886SL3S1203_1213 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 4.4 — 17 March 2014
178844 4 of 37
NXP Semiconductors SL3S1203_1213
UCODE G2iL and G2iL+
6. Block diagram
The SL3S12x3 IC consists of three major blocks:
- Analog Interface
- Digital Control
- EEPROM
The analog part provides stable supply voltage and demodulates data received from the
reader for being processed by the digital part. Further, the modulation transistor of the
analog part transmits data back to the reader.
The digital section includes the state machines, processes the protocol and handles
communication with the EEPROM, which contains the EPC and the user data.
Fig 1. Block diagram of G2iL IC
001aam226
MOD
DEMOD
VREG
VDD
VDD
data
in
data
out
R/W
ANALOG
RF INTERFACE
PAD
PAD
RECT
DIGITAL CONTROL
ANTENNA
ANTICOLLISION
READ/WRITE
CONTROL
ACCESS CONTROL
EEPROM INTERFACE
CONTROL
RF INTERFACE
CONTROL
I/O CONTROL
I/O
CONTROL
EEPROM
MEMORY
SEQUENCER
CHARGE PUMP
PAD
OUT
PADSL3S1203_1213 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 4.4 — 17 March 2014
178844 5 of 37
NXP Semiconductors SL3S1203_1213
UCODE G2iL and G2iL+
7. Pinning information
7.1 Pin description
Fig 2. Pinning bare die Fig 3. Pin configuration for SOT886
001aam529
VDD
OUT RFN
NXP trademark RFP
SL3S12x3FTB0
n.c.
001aan103
RFP
RFN
n.c.
VDD
OUT
Transparent top view
2
3
1
5
4
6
Table 3. Pin description bare die
Symbol Description
OUT output pin
RFN grounded antenna connector
VDD external supply
RFP ungrounded antenna connector
Table 4. Pin description SOT886
Pin Symbol Description
1 RFP ungrounded antenna connector
2 n.c. not connected
3 RFN grounded antenna connector
4 OUT output pin
5 n.c. not connected
6 VDD external supplySL3S1203_1213 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 4.4 — 17 March 2014
178844 6 of 37
NXP Semiconductors SL3S1203_1213
UCODE G2iL and G2iL+
8. Wafer layout
8.1 Wafer layout
(1) Die to Die distance (metal sealring - metal sealring) 21,4 m, (X-scribe line width: 15 m)
(2) Die to Die distance (metal sealring - metal sealring) 21,4 m, (Y-scribe line width: 15 m)
(3) Chip step, x-length: 485 m
(4) Chip step, y-length: 435 m
(5) Bump to bump distance X (OUT - RFN): 383 m
(6) Bump to bump distance Y (RFN - RFP): 333 m
(7) Distance bump to metal sealring X: 40,3 m (outer edge - top metal)
(8) Distance bump to metal sealring Y: 40,3 m
Bump size X x Y: 60 m x 60 m
Remark: OUT and VDD are used with G2iL+ only
Fig 4. G2iL wafer layout
not to scale! 001aak871
(1)
(7)
(2)
(8)
(5)
(6) (4)
(3)
Y
X
VDD
OUT RFN
RFPSL3S1203_1213 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 4.4 — 17 March 2014
178844 7 of 37
NXP Semiconductors SL3S1203_1213
UCODE G2iL and G2iL+
9. Mechanical specification
The UCODE G2iL/G2iL+ wafers are available in 75 m and 120 m thickness. The 75m
thick wafer allows ultra thin label design but require a proper tuning of the glue dispenser
during production. Because of the more robust structure of the 120m wafer, the wafer is
ideal for harsh applications. The 120 m thick wafer is also enhanced with 7m Polyimide
spacer allowing additional protection of the active circuit.
9.1 Wafer specification
See Ref. 20 “Data sheet - Delivery type description – General specification for 8” wafer on
UV-tape with electronic fail die marking, BU-ID document number: 1093**”.
9.1.1 Wafer
Table 5. Specifications
Wafer
Designation each wafer is scribed with batch number
and wafer number
Diameter 200 mm (8”)
Thickness
SL3S12x3FUF 75 m 15 m
SL3S12x3FUD 120 m 15 m
Number of pads 4
Pad location non diagonal/ placed in chip corners
Distance pad to pad RFN-RFP 333.0 m
Distance pad to pad OUT-RFN 383.0 m
Process CMOS 0.14 m
Batch size 25 wafers
Potential good dies per wafer 139.351
Wafer backside
Material Si
Treatment ground and stress release
Roughness Ra max. 0.5 m, Rt max. 5 m
Chip dimensions
Die size including scribe 0.485 mm 0.435 mm = 0.211 mm2
Scribe line width: x-dimension = 15 m
y-dimension = 15 m
Passivation on front
Type Sandwich structure
Material PE-Nitride (on top)
Thickness 1.75 m total thickness of passivation
Polyimide spacer 7 m 1 m (SL3S12x3FUD only)
Au bump
Bump material > 99.9 % pure AuSL3S1203_1213 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 4.4 — 17 March 2014
178844 8 of 37
NXP Semiconductors SL3S1203_1213
UCODE G2iL and G2iL+
[1] Because of the 7 m spacer, the bump will measure 18 m relative height protruding the spacer.
9.1.2 Fail die identification
No inkdots are applied to the wafer.
Electronic wafer mapping (SECS II format) covers the electrical test results and
additionally the results of mechanical/visual inspection.
See Ref. 20 “Data sheet - Delivery type description – General specification for 8” wafer on
UV-tape with electronic fail die marking, BU-ID document number: 1093**”
9.1.3 Map file distribution
See Ref. 20 “Data sheet - Delivery type description – General specification for 8” wafer on
UV-tape with electronic fail die marking, BU-ID document number: 1093**”
10. Functional description
10.1 Air interface standards
The UCODE G2iL fully supports all parts of the "Specification for RFID Air Interface
EPCglobal, EPC Radio-Frequency Identity Protocols, Class-1 Generation-2 UHF RFID,
Protocol for Communications at 860 MHz to 960 MHz, Version 1.2.0".
10.2 Power transfer
The interrogator provides an RF field that powers the tag, equipped with a UCODE G2iL.
The antenna transforms the impedance of free space to the chip input impedance in order
to get the maximum possible power for the G2iL on the tag. The G2iL+ can also be
supplied externally.
The RF field, which is oscillating on the operating frequency provided by the interrogator,
is rectified to provide a smoothed DC voltage to the analog and digital modules of the IC.
Bump hardness 35 – 80 HV 0.005
Bump shear strength > 70 MPa
Bump height
SL3S12x3FUF 18 m
SL3S12x3FUD 25 m[1]
Bump height uniformity
within a die 2 m
– within a wafer 3 m
– wafer to wafer 4 m
Bump flatness 1.5 m
Bump size
– RFP, RFN 60 60 m
– OUT, VDD 60 60 m
Bump size variation 5 m
Table 5. SpecificationsSL3S1203_1213 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 4.4 — 17 March 2014
178844 9 of 37
NXP Semiconductors SL3S1203_1213
UCODE G2iL and G2iL+
The antenna that is attached to the chip may use a DC connection between the two
antenna pads. Therefore the G2iL also enables loop antenna design. Possible examples
of supported antenna structures can be found in the reference antenna design guide.
10.3 Data transfer
10.3.1 Reader to tag Link
An interrogator transmits information to the UCODE G2iL by modulating an UHF RF
signal. The G2iL receives both information and operating energy from this RF signal. Tags
are passive, meaning that they receive all of their operating energy from the interrogator's
RF waveform. In order to further improve the read range the UCODE G2iL+ can be
externally supplied as well so the energy to operate the chip does not need to be
transmitted by the reader.
An interrogator is using a fixed modulation and data rate for the duration of at least one
inventory round. It communicates to the G2iL by modulating an RF carrier using DSB-ASK
with PIE encoding.
For further details refer to Section 16, Ref. 1. Interrogator-to-tag (R=>T) communications.
10.3.2 Tag to reader Link
An interrogator receives information from a G2iL by transmitting an unmodulated RF
carrier and listening for a backscattered reply. The G2iL backscatters by switching the
reflection coefficient of its antenna between two states in accordance with the data being
sent. For further details refer to Section 16, Ref. 1, chapter 6.3.1.3.
The UCODE G2iL communicates information by backscatter-modulating the amplitude
and/or phase of the RF carrier. Interrogators shall be capable of demodulating either
demodulation type.
The encoding format, selected in response to interrogator commands, is either FM0
baseband or Miller-modulated subcarrier.
10.4 G2iL and G2iL+ differences
The UCODE G2iL is tailored for application where mainly EPC or TID number space is
needed. The G2iL+ in addition provides functionality such as tag tamper alarm, external
supply operation to further boost read/write range (external supply mode), a Privacy mode
reducing the read range or I/O functionality (data transfer to externally connected devices)
required.
The following table provides an overview of G2iL, G2iL+ special features.
Table 6. Overview of G2iL and G2iL+ features
Features G2iL G2iL+
Read protection (bankwise) yes yes
PSF (Built-in Product Status Flag) yes yes
Backscatter strength reduction yes yes
Real read range reduction yes yes
Digital switch / Digital input - yes
External supply mode - yesSL3S1203_1213 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 4.4 — 17 March 2014
178844 10 of 37
NXP Semiconductors SL3S1203_1213
UCODE G2iL and G2iL+
10.5 Supported commands
The G2iL supports all mandatory EPCglobal V1.2.0 commands.
In addition the G2iL supports the following optional commands:
• ACCESS
• Block Write (32 bit)
The G2iL features the following custom commands described more in detail later:
• ResetReadProtect (backward compatible to G2X)
• ReadProtect (backward compatible to G2X)
• ChangeEAS (backward compatible to G2X)
• EAS_Alarm (backward compatible to G2X)
• ChangeConfig (new with G2iL)
10.6 G2iL, G2iL+ memory
The G2iL, G2iL+ memory is implemented according EPCglobal Class1Gen2 and
organized in three sections:
The logical address of all memory banks begin at zero (00h).
In addition to the three memory banks one configuration word to handle the G2iL specific
features is available at EPC bank 01 address 200h. The configuration word is described in
detail in Section 10.7.1 “ChangeConfig”.
Memory pages (16 bit words) pre-programmed to zero will not execute an erase cycle
before writing data to it. This approach accelerates initialization of the chip and enables
faster programming of the memory.
RF field detection - yes
Data transfer - yes
Tag tamper alarm - yes
Table 6. Overview of G2iL and G2iL+ features …continued
Features G2iL G2iL+
Table 7. G2iL memory sections
Name Size Bank
Reserved memory (32 bit ACCESS and 32 bit KILL password) 64 bit 00b
EPC (excluding 16 bit CRC-16 and 16 bit PC) 128 bit 01b
G2iL Configuration Word 16 bit 01b
TID (including permalocked unique 32 bit serial number) 64 bit 10bSL3S1203_1213 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 4.4 — 17 March 2014
178844 11 of 37
NXP Semiconductors SL3S1203_1213
UCODE G2iL and G2iL+
10.6.1 G2iL, G2iL+ overall memory map
[1] See Figure 5
[2] Indicates the existence of a Configuration Word at the end of the EPC number
[3] See also Table 12 for further details.
Table 8. G2iL, G2iL+ overall memory map
Bank
address
Memory
address
Type Content Initial Remark
Bank 00 00h to 1Fh reserved kill password all 00h unlocked memory
20h to 3Fh reserved access password all 00h unlocked memory
Bank 01
EPC
00h to 0Fh EPC CRC-16: refer to Ref. 16 memory mapped
calculated CRC
10h to 14h EPC backscatter length 00110b unlocked memory
15h EPC UMI 0b unlocked memory
16h EPC XPC indicator 0b hardwired to 0
17h to 1Fh EPC numbering system indicator 00h unlocked memory
20h to 9Fh EPC EPC [1] unlocked memory
Bank 01
Config Word
200h EPC tamper alarm flag 0b[3] indicator bit
201h EPC external supply flag or input
signal
0b[3] indicator bit
202h EPC RFU 0b[3] locked memory
203h EPC RFU 0b[3] locked memory
204h EPC invert digital output: 0b[3] temporary bit
205h EPC transparent mode on/off 0b[3] temporary bit
206h EPC transparent mode data/raw 0b[3] temporary bit
207h EPC RFU 0b[3] locked memory
208h EPC RFU 0b[3] locked memory
209h EPC max. backscatter strength 1b[3] unlocked memory
20Ah EPC digital output 0b[3] unlocked memory
20Bh EPC read range reduction on/off 0b[3] unlocked memory
20Ch EPC RFU 0b[3] locked memory
20Dh EPC read protect EPC Bank 0b[3] unlocked memory
20Eh EPC read protect TID 0b[3] unlocked memory
20Fh EPC PSF alarm flag 0b[3] unlocked memory
Bank 10
TID
00h to 07h TID allocation class identifier 1110 0010b locked memory
08h to 13h TID tag mask designer identifier 0000 0000 0110b locked memory
14h TID config word indicator 1b[2] locked memory
14h to 1Fh TID tag model number TMNR[1] locked memory
20h to 3Fh TID serial number SNR locked memoryxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxx x x x xxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxx xx xx xxxxx
xxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxx xxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxx x x
xxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxx
xxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxx xxx
SL3S1203_1213 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
COMPANY PUBLIC
Product data sheet Rev. 4.4 — 17 March 2014
178844 12 of 37
NXP Semiconductors SL3S1203_1213
UCODE G2iL and G2iL+
10.6.2 G2iL TID memory details
Fig 5. G2iL TID memory structure
aaa-010217
E2006906 E2h 006h 1 0010b 0000110b
Ucode G2iL+ E2006807 E2h 006h 1 0000b 0000111b
E2006907 E2h 006h 1 0010b 0000111b
Ucode G2iL E2006806 E2h 006h 1 0000b 0000110b
First 32 bit of TID
memory
Class ID
Mask
Designer
ID Config Word Indicator Sub Version Nr.
Model Number
Version
(Silicon) Nr.
Class Identifier
MS Byte
MS Bit LS Bit
LS Byte
TID
MS Bit LS Bit
Mask-Designer Identifier Model Number Serial Number
Bits 7 0 00 11 11 31 0
Addresses 00h 07h 13h 1Fh 3Fh
Addresses 00h 3Fh
08h 14h 20h
E2h
(EAN.UCC)
006h
(NXP)
806h or 906h or B06h
(UCODE G2iL)
00000001h to FFFFFFFFh
Sub Version Number Version Number
000b or 001b or 0110b 0000110b
(UCODE G2iL)
Bits 0 3 0 6 0
Addresses 14h 18h 19h 1Fh
E2006B06 E2h 006h 1 0110b 0000110b
E2006B07 E2h 006h 1 0110b 0000111bSL3S1203_1213 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 4.4 — 17 March 2014
178844 13 of 37
NXP Semiconductors SL3S1203_1213
UCODE G2iL and G2iL+
10.7 Custom commands
The UCODE G2iL, G2iL+ is equipped with a number of additional features and custom
commands.
Nevertheless, the chip is designed in a way standard EPCglobal READ/WRITE/ACCESS
commands can be used to operate the features.
The memory map stated in the previous section describes the Configuration Word used to
control the additional features located at address 200h of the EPC memory. For this
reason the standard READ/WRITE commands of an UHF EPCglobal compliant reader
can be used to select the flags or activate/deactivate features.
The features can only be activated/deactivated (written) using standard EPC WRITE
command as long the EPC is not locked. In case the EPC is locked either the bank needs
to be unlocked to apply changes or the ChangeConfig custom command is used to
change the settings.
The UCODE G2iL is also equipped with the complete UCODE G2X command set for
backward compatibility reasons. Nevertheless, the one ChangeConfig command of the
G2iL can be used instead of the entire G2X command set.
Bit 14h of the TID indicates the existence of a Configuration Word. This flag will enable
selecting Config-Word enhanced transponders in mixed tag populations.
10.7.1 ChangeConfig
Although G2iL is tailored for supply chain management, item level tagging and product
authentication the G2iL+ version enables active interaction with products. Among the
password protected features are the capability of download firmware to electronics,
activate/deactivate electronics which can also be used as theft deterrence, a dedicated
privacy mode by reducing the read range, integrated PSF (Product Status Flag) or Tag
Tamper Alarm.
The G2iL ChangeConfig custom command allows handling the special NXP
Semiconductors features described in the following paragraph. Please also see the
memory map in Section 10.6 “G2iL, G2iL+ memory” and “Section 10.7.2 “G2iL, G2iL+
special features control mechanism”. If the EPC memory is not write locked the standard
EPC READ/WRITE command can be used to change the settings.
G2iL, G2iL+ special features1
UCODE G2iL and G2iL+ common special features are:
• Bank wise read protection (separate for EPC and TID)
EPC bank and the serial number part of the TID can be read protected independently.
When protected reading of the particular memory will return '0'. The flags of the
configuration word can be selected using the standard SELECT2 command. Only
read protected parts will then participate an inventory round. The G2X ReadProtect
command will set both EPC and TID read protect flags.
1. The features can only be manipulated (enabled/disabled) with unlocked EPC bank, otherwise the ChangeConfig command can be
used.
2. SELECT has to be applied onto the Configuration Word with pointer address 200h. Selecting bits within the Configuration Word
using a pointer address not equal to 200h is not possible.SL3S1203_1213 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 4.4 — 17 March 2014
178844 14 of 37
NXP Semiconductors SL3S1203_1213
UCODE G2iL and G2iL+
• Integrated PSF (Product Status Flag)
The PSF is a general purpose flag that can be used as an EAS (Electronic Article
Surveillance) flag, quality checked flag or similar.
The G2iL offers two ways of detecting an activated PSF. In cases extremely fast
detection is needed the EAS_Alarm command can be used. The UCODE G2iL will
reply a 64-bit alarm code like described in section EAS_Alarm upon sending the
command. As a second option the EPC SELECT2 command selecting the PSF flag of
the configuration word can be used. In the following inventory round only PSF
enabled chips will reply their EPC number.
• Backscatter strength reduction
The UCODE G2iL features two levels of backscatter strengths. Per default maximum
backscatter is enabled in order to enable maximum read rates. When clearing the flag
the strength can be reduced if needed.
• Real Read Range Reduction 4R
Some applications require the reduction of the read range to close proximity for
privacy reasons. Setting the 4R flag will significantly reduce the chip sensitivity to
+12 dBm. The +12 dBm have to be available at chip start up (slow increase of field
strength is not applicable). For additional privacy, the read protection can be activated
in the same configuration step. The related flag of the configuration word can be
selected using the standard SELECT2 command so only chips with reduced read
range will be part of an inventory.
Remark: The attenuation will result in only a few centimeter of read range at 36 dBm
EIRP!
UCODE G2iL+ specific special features are:1
• Tag Tamper Alarm (G2iL+ only)
The UCODE G2iL+ Tamper Alarm will flag the status of the VDD to OUT pad
connection which can be designed as an predetermined breaking point (see
Figure 6).
The status of the pad connection (open/closed) can be read in the configuration register
and/or selected using the EPC SELECT2. This feature will enable designing a wireless
RFID safety seal. When breaking the connection by peeling off the label or manipulating a
lock an alarm can be triggered.
Fig 6. Schematic of connecting VDD and OUT pad with a predetermined breaking point
to turn a standard RFID label into a wireless safety seal
001aam228
OUT VDD
GND RFPSL3S1203_1213 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 4.4 — 17 March 2014
178844 15 of 37
NXP Semiconductors SL3S1203_1213
UCODE G2iL and G2iL+
• RF field detection (G2iL+ only)
The UCODE G2iL+ VDD pin can be also used as a RF field detector. Upon bringing
the tag within an RF field, a pulse signal will be immediately sent from the VDD test
pad. (for details see Ref. 21).
• Digital Switch (G2iL+ only)
The UCODE G2iL+ OUT pin can be used as digital switch. The state of the output pad
can be switched to VDD or GND depending on the Digital OUT bit of the Configuration
Word register. The state of the output is persistent in the memory even after KILL or
switching off the supply. This feature will allow activating/deactivating externally
connected peripherals or can be used as theft deterrence of electronics.
The state of the OUT pin can also be changed temporary by toggling the 'Invert Digital
Output' bit.
• Data transfer Mode (G2iL+ only)
In applications where not switching the output like described in "Digital Switch" but
external device communication is needed the G2iL+ Data Transfer Mode can be used
by setting the according bit of the Configuration Word register. When activated the air
interface communication will be directly transferred to the OUT pad of the chip.
Two modes of data transfer are available and can be switched using the Transparent
Mode DATA/RAW bit.
The default Transparent Mode DATA will remove the Frame Sync of the
communication and toggle the output with every raising edge in the RF field. This will
allow implementing a Manchester type of data transmission.
The Transparent Mode RAW will switch the demodulated air interface communication
to the OUT pad.
• External Supply Indicator - Digital Input (G2iL+ only)
The VDD pad of the UCODE G2iL+ can be used as a single bit digital input pin. The
state of the pad is directly associated with the External Supply Indicator bit of the
configuration register. Simple one bit return signaling (chip to reader) can be
implemented by polling this Configuration Word register flag. RF reset is necessary
for proper polling.
• External Supply Mode (G2iL+ only)
The UCODE G2iL+ can be supplied externally by connecting 1.85 V (Iout = 0µA)
supply. When externally supplied less energy from the RF field is needed to operate
the chip. This will not just enable further improved sensitivity and read ranges (up to
27 dBm) but also enable a write range that is equal to the read range.
The figure schematically shows the supply connected to the UCODE G2iL+.
Remark: When permanently externally supplied there will not be a power-on-reset. This
will result in the following limitations:
• When externally supplied session flag S0 will keep it’s state during RF-OFF phase.
• When externally supplied session flag S2, S3, SL will have infinite persistence time
and will behave similar to S0.
• Session flag S1 will behave regular like in pure passive operation.SL3S1203_1213 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 4.4 — 17 March 2014
178844 16 of 37
NXP Semiconductors SL3S1203_1213
UCODE G2iL and G2iL+
The bits to be toggled in the configuration register need to be set to '1'.
E.g. sending 0000 0000 0001 0001 XOR RN16 will activate the 4R and PSF. Sending the
very same command a second time will disable the features again.
The reply of the ChangeConfig will return the current register setting.
Fig 7. Schematic of external power supply
Table 9. ChangeConfig custom command
Command RFU Data RN CRC-16
No. of bits 16 8 16 16 16
Description 11100000
00000111
00000000 Toggle bits
XOR RN 16
handle -
Table 10. ChangeConfig custom command reply
Header Status bits RN CRC-16
No. of bits 1 16 16 16
Description 0 Config-Word Handle -
Table 11. ChangeConfig command-response table
Starting state Condition Response Next state
ready all - ready
arbitrate, reply,
acknowledged
all - arbitrate
open valid handle Status word
needs to change
Backscatter unchanged
Config-WordConfig-Word
immediately
open
valid handle Status word does
not need to change
Backscatter Config-Word
immediately
open
secured valid handle Status word
needs to change
Backscatter modified
Config-Word, when done
secured
valid handle Status word does
not need to change
Backscatter Config-Word
immediately
secured
killed all - killed
001aam229
OUT VDD
Vsupply
GND RFPSL3S1203_1213 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 4.4 — 17 March 2014
178844 17 of 37
NXP Semiconductors SL3S1203_1213
UCODE G2iL and G2iL+
The features can only be activated/deactivated using standard EPC WRITE if the EPC
bank is unlocked. The permanent and temporary bits of the Configuration Word can be
toggled without the need for an ACCESS password in case the ACCESS password is set
to zero. In case the EPC bank is locked the lock needs to be removed before applying
changes or the ChangeConfig command has to be used.
10.7.2 G2iL, G2iL+ special features control mechanism
Special features of the G2iL are managed using a configuration word (Config-Word)
located at address 200h in the EPC memory bank.
The entire Config-Word is selectable (using the standard EPC SELECT2 command) and
can be read using standard EPC READ command and modified using the standard EPC
WRITE or ChangeConfig custom command in case the EPC memory is locked for writing.
ChangeConfig can be executed from the OPEN and SECURED state.
The chip will take all “Toggle Bits” for ’0’ if the chip is in the OPEN state or the ACCESS
password is zero; therefore it will not alter any status bits, but report the current status
only. The command will be ignored with an invalid CRC-16 or an invalid handle. The chip
will then remain in the current state. The CRC-16 is calculated from the first
command-code bit to the last handle bit.
A ChangeConfig command without frame-sync and proceeding Req_RN will be ignored.
The command will also be ignored if any of the RFU bits are toggled.
In order to change the configuration, to activate/deactivate a feature a ’1’ has to be written
to the corresponding register flag to toggle the status. E.g. sending 0x0002 to the register
will activate the read protection of the TID. Sending the same command a second time will
again clear the read protection of the TID. Invalid toggling on indicator or RFU bits are
ignored.
Executing the command with zero as payload or in the OPEN state will return the current
register settings. The chip will reply to a successful ChangeConfig with an extended
preamble regardless of the TRext value of the Query command.
After sending a ChangeConfig an interrogator shall transmit CW for less than TReply or
20 ms, where TReply is the time between the interrogator's ChangeConfig command and
the chip’s backscattered reply. An interrogator may observe three possible responses
after sending a ChangeConfig, depending on the success or failure of the operation
• ChangeConfigChangeConfig succeeded: The chip will backscatter the reply shown
above comprising a header (a 0-bit), the current Status Word setting, the handle, and
a CRC-16 calculated over the 0-bit, the status word and the handle. If the interrogator
observes this reply within 20 ms then the ChangeConfig completed successfully.
• The chip encounters an error: The chip will backscatter an error code during the CW
period rather than the reply shown below (see EPCglobal Spec for error-code
definitions and for the reply format).
• ChangeConfig does not succeed: If the interrogator does not observe a reply within
20 ms then the ChangeStatus did not complete successfully. The interrogator may
issue a Req_RN command (containing the handle) to verify that the chip is still in the
interrogator's field, and may reissue the ChangeConfig command.
The G2iL configuration word is located at address 200h of the EPC memory and is
structured as following:SL3S1203_1213 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 4.4 — 17 March 2014
178844 18 of 37
NXP Semiconductors SL3S1203_1213
UCODE G2iL and G2iL+
The configuration word contains three different type of bits:
• Indicator bits cannot be changed by command:
Tag Tamper Alarm Indicator
External Supply Indicator (digital input)
• Temporary bits are reset at power up:
Invert Output
Transparent Mode on/off
Data Mode data/raw
• Permanent bits: permanently stored bits in the memory
Max. Backscatter Strength
Digital Output
Read Range Reduction
Read Protect EPC
Read Protect TID
PSF Alarm
10.7.3 ReadProtect3
The G2iL ReadProtect custom command enables reliable read protection of the entire
G2iL memory. Executing ReadProtect from the Secured state will set the ProtectEPC and
ProtectTID bits of the Configuration Word to '1'. With the ReadProtect-Bit set the G2iL will
continue to work unaffected but veil its protected content.
The read protection can be removed by executing Reset ReadProtect. The
ReadProtect-Bits will than be cleared.
Devices whose access password is zero will ignore the command. A frame-sync must be
pre-pended the command.
After sending the ReadProtect command an interrogator shall transmit CW for the lesser
of TReply or 20 ms, where TReply is the time between the interrogator's ReadProtect
command and the backscattered reply. An interrogator may observe three possible
responses after sending a ReadProtect, depending on the success or failure of the
operation:
Table 12. Address 200h to 207h
Indicator bits Temporary bits
Tamper
indicator
External supply
indicator
RFU RFU Invert Output Transparent
mode on/off
Data mode
data/raw
RFU
0 1 2 34 5 6 7
Table 13. Address 208h to 20Fh
Permanent bits
RFU max. backscatter
strength
Digital
output
Privacy
mode
RFU Protect EPC Protect TID PSF Alarm
bit
8 9 10 11 12 13 14 15
3. Note: The ChangeConfig command can be used instead of “ReadProtect”, “ResetReadProtect”, “ChangeEAS”.SL3S1203_1213 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 4.4 — 17 March 2014
178844 19 of 37
NXP Semiconductors SL3S1203_1213
UCODE G2iL and G2iL+
• ReadProtect succeeds: After completing the ReadProtect the G2iL shall backscatter
the reply shown in Table 15 comprising a header (a 0-bit), the tag's handle, and a
CRC-16 calculated over the 0-bit and handle. Immediately after this reply the G2iL will
render itself to this ReadProtect mode. If the interrogator observes this reply within
20 ms then the ReadProtect completed successfully.
• The G2iL encounters an error: The G2iL will backscatter an error code during the CW
period rather than the reply shown in the EPCglobal Spec (see Annex I for error-code
definitions and for the reply format).
• ReadProtect does not succeed: If the interrogator does not observe a reply within
20 ms then the ReadProtect did not complete successfully. The interrogator may
issue a Req_RN command (containing the handle) to verify that the G2iL is still in the
interrogation zone, and may re-initiate the ReadProtect command.
The G2iL reply to the ReadProtect command will use the extended preamble shown in
EPCglobal Spec (Figure 6.11 or Figure 6.15), as appropriate (i.e. a Tag shall reply as if
TRext=1) regardless of the TRext value in the Query that initiated the round.
10.7.4 Reset ReadProtect3
Reset ReadProtect allows an interrogator to clear the ProtectEPC and ProtectTID bits of
the Configuration Word. This will re-enable reading of the related G2iL memory content.
For details on the command response please refer to Table 17 “Reset ReadProtect
command”.
Table 14. ReadProtect command
Command RN CRC-16
# of bits 16 16 16
description 11100000 00000001 handle -
Table 15. G2iL reply to a successful ReadProtect procedure
Header RN CRC-16
# of bits 1 16 16
description 0 handle -
Table 16. ReadProtect command-response table
Starting State Condition Response Next State
ready all – ready
arbitrate, reply,
acknowledged
all – arbitrate
open all - open
secured valid handle & invalid
access password
– arbitrate
valid handle & valid
non zero access
password
Backscatter handle,
when done
secured
invalid handle – secured
killed all – killedSL3S1203_1213 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 4.4 — 17 March 2014
178844 20 of 37
NXP Semiconductors SL3S1203_1213
UCODE G2iL and G2iL+
After sending a Reset ReadProtect an interrogator shall transmit CW for the lesser of
TReply or 20 ms, where TReply is the time between the interrogator's Reset ReadProtect
command and the G2iL backscattered reply. A Req_RN command prior to the Reset
ReadProtect is necessary to successfully execute the command. A frame-sync must be
pre-pended the command.
An interrogator may observe three possible responses after sending a Reset
ReadProtect, depending on the success or failure of the operation:
• Reset ReadProtect succeeds: After completing the Reset ReadProtect a G2iL will
backscatter the reply shown in Table 18 comprising a header (a 0-bit), the handle, and
a CRC-16 calculated over the 0-bit and handle. If the interrogator observes this reply
within 20 ms then the Reset ReadProtect completed successfully.
• The G2iL encounters an error: The G2iL will backscatter an error code during the CW
period rather than the reply shown in Table 18 (see EPCglobal Spec for error-code
definitions and for the reply format).
• Reset ReadProtect does not succeed: If the interrogator does not observe a reply
within 20 ms then the Reset ReadProtect did not complete successfully. The
interrogator may issue a Req_RN command (containing the handle) to verify that the
G2iL is still in the interrogation zone, and may reissue the Reset ReadProtect
command.
The G2iL reply to the Reset ReadProtect command will use the extended preamble
shown in EPCglobal Spec (Figure 6.11 or Figure 6.15), as appropriate (i.e. a G2iL will
reply as if TRext=1 regardless of the TRext value in the Query that initiated the round.
The Reset ReadProtect command is structured as following:
• 16 bit command
• Password: 32 bit Access-Password XOR with 2 times current RN16
Remark: To generate the 32 bit password the 16 bit RN16 is duplicated and used two
times to generate the 32 bit (e.g. a RN16 of 1234 will result in 1234 1234).
• 16 bit handle
• CRC-16 calculate over the first command-code bit to the last handle bit
Table 17. Reset ReadProtect command
Command Password RN CRC-16
# of bits 16 32 16 16
description 11100000
00000010
(access
password)
2*RN16
handle -
Table 18. G2iL reply to a successful Reset ReadProtect command
Header RN CRC-16
# of bits 1 16 16
description 0 handle -SL3S1203_1213 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 4.4 — 17 March 2014
178844 21 of 37
NXP Semiconductors SL3S1203_1213
UCODE G2iL and G2iL+
10.7.5 ChangeEAS3
UCODE G2iL equipped RFID tags will also feature a stand-alone operating EAS alarm
mechanism for fast and offline electronic article surveillance. The PSF bit of the
Configuration Word directly relates to the EAS Alarm feature. With an PSF bit set to '1' the
tag will reply to an EAS_Alarm command by backscattering a 64 bit alarm code without
the need of a Select or Query. The EAS is a built-in solution so no connection to a
backend database is required. In case the EAS_Alarm command is not implemented in
the reader a standard EPC SELCET to the Configuration Word and Query can be used.
When using standard SELECT/QUERY the EPC will be returned during inventory.
ChangeEAS can be executed from the Secured state only. The command will be ignored
if the Access Password is zero, the command will also be ignored with an invalid CRC-16
or an invalid handle, the G2iL will than remain in the current state. The CRC-16 is
calculated from the first command-code bit to the last handle bit. A frame-sync must be
pre-pended the command.
The G2iL reply to a successful ChangeEAS will use the extended preamble, as
appropriate (i.e. a Tag shall reply as if TRext=1) regardless of the TRext value in the
Query that initiated the round.
After sending a ChangeEAS an interrogator shall transmit CW for less than TReply or
20 ms, where TReply is the time between the interrogator's ChangeEAS command and the
G2iL backscattered reply. An interrogator may observe three possible responses after
sending a ChangeEAS, depending on the success or failure of the operation
• ChangeEAS succeeds: After completing the ChangeEAS a G2iL will backscatter the
reply shown in Table 21 comprising a header (a 0-bit), the handle, and a CRC-16
calculated over the 0-bit and handle. If the interrogator observes this reply within
20 ms then the ChangeEAS completed successfully.
• The G2iL encounters an error: The G2iL will backscatter an error code during the CW
period rather than the reply shown in Table 21 (see EPCglobal Spec for error-code
definitions and for the reply format).
Table 19. Reset ReadProtect command-response table
Starting State Condition Response Next State
ready all – ready
arbitrate, reply,
acknowledged
all – arbitrate
open valid handle & valid access password Backscatter handle,
when done
open
valid handle & invalid access password – arbitrate
invalid handle – open
secured valid handle & valid access password Backscatter handle,
when done
secured
valid handle & invalid access password – arbitrate
invalid handle – secured
killed all – killedSL3S1203_1213 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 4.4 — 17 March 2014
178844 22 of 37
NXP Semiconductors SL3S1203_1213
UCODE G2iL and G2iL+
• ChangeEAS does not succeed: If the interrogator does not observe a reply within
20 ms then the ChangeEAS did not complete successfully. The interrogator may
issue a Req_RN command (containing the handle) to verify that the G2iL is still in the
interrogator's field, and may reissue the ChangeEAS command.
Upon receiving a valid ChangeEAS command a G2iL will perform the commanded
set/reset operation of the PSF bit of the Configuration Word.
If PSF bit is set, the EAS_Alarm command will be available after the next power up and
reply the 64 bit EAS code upon execution. Otherwise the EAS_Alarm command will be
ignored.
10.7.6 EAS_Alarm
Upon receiving an EAS_Alarm custom command the UCODE G2iL will immediately
backscatter an EAS-Alarmcode in case the PSF bit of the Configuration Word is set. The
alarm code is returned without any delay caused by Select, Query and without the need
for a backend database.
The EAS feature of the G2iL is available after enabling it by sending a ChangeEAS
command described in Section 10.7.5 “ChangeEAS3” or after setting the PSF bit of the
Configuration Word to ’1’. With the EAS-Alarm enabled the G2iL will reply to an
EAS_Alarm command by backscattering a fixed 64 bit alarm code. A G2iL will reply to an
EAS_Alarm command from the ready state only. As an alternative to the fast EAS_Alarm
command a standard SELECT2 (upon the Configuration Word) and QUERY can be used.
If the PSF bit is reset to '0' by sending a ChangeEAS command in the password protected
Secure state or clearing the PSF bit the G2iL will not reply to an EAS_Alarm command.
Table 20. ChangeEAS command
Command ChangeEAS RN CRC-16
# of bits 16 1 16 16
description 11100000
00000011
1 ... set PSF bit
0 ... reset PSF bit
handle
Table 21. G2iL reply to a successful ChangeEAS command
Header RN CRC-16
# of bits 1 16 16
description 0 handle -
Table 22. ChangeEAS command-response table
Starting State Condition Response Next state
ready all – ready
arbitrate, reply,
acknowledged
all – arbitrate
open all – open
secured valid handle backscatter handle,
when done
secured
invalid handle – secured
killed all – killedSL3S1203_1213 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 4.4 — 17 March 2014
178844 23 of 37
NXP Semiconductors SL3S1203_1213
UCODE G2iL and G2iL+
The EAS_Alarm command is structured as following:
• 16 bit command
• 16 bit inverted command
• DR (TRcal divide ratio) sets the T=>R link frequency as described in EPCglobal Spec.
6.3.1.2.8 and Table 6.9.
• M (cycles per symbol) sets the T=>R data rate and modulation format as shown in
EPCglobal Spec. Table 6.10.
• TRext chooses whether the T=>R preamble is pre-pended with a pilot tone as
described in EPCglobal Spec. 6.3.1.3.
A preamble must be pre-pended the EAS_Alarm command according EPCglobal Spec,
6.3.1.2.8.
Upon receiving an EAS_Alarm command the tag loads the CRC5 register with 01001b
and backscatters the 64 bit alarm code accordingly. The reader is now able to calculate
the CRC5 over the backscattered 64 bits received to verify the received code.
Table 23. EAS_Alarm command
Command Inv_Command DR M TRext CRC-16
# of bits 16 16 1 2 1 16
description 11100000
00000100
00011111
11111011
0: DR = 8
1: DR = 64/3
00: M = 1
01: M = 2
10: M = 4
11: M = 8
0: no pilot
tone
1: use pilot
tone
-
Table 24. G2iL reply to a successful EAS_Alarm command
Header EAS Code
# of bits 1 64
description 0 CRC5 (MSB)
Table 25. EAS_Alarm command-response table
Starting State Condition Response Next state
ready PSF bit is set
PSF bit is cleard
backscatter alarm code
--
ready
arbitrate, reply,
acknowledged
all – arbitrate
open all – open
secured all – secured
killed all – killedSL3S1203_1213 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 4.4 — 17 March 2014
178844 24 of 37
NXP Semiconductors SL3S1203_1213
UCODE G2iL and G2iL+
11. Limiting values
[1] Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the
device. This is a stress rating only and functional operation of the device at these or any conditions other
than those described in the Operating Conditions and Electrical Characteristics section of this specification
is not implied.
[2] This product includes circuitry specifically designed for the protection of its internal devices from the
damaging effects of excessive static charge. Nonetheless, it is suggested that conventional precautions be
taken to avoid applying greater than the rated maxima.
[3] For ESD measurement, the die chip has been mounted into a CDIP20 package.
Table 26. Limiting values[1][2]
In accordance with the Absolute Maximum Rating System (IEC 60134).
Voltages are referenced to RFN
Symbol Parameter Conditions Min Max Unit
Bare die and SOT886 limitations
Tstg storage temperature 55 +125 C
Tamb ambient temperature 40 +85 C
VESD electrostatic discharge
voltage
Human body
model
[3] - 2 kV
Pad limitations
Vi input voltage absolute limits,
VDD-OUT pad
0.5 +2.5 V
Io output current absolute limits
input/output
current, VDD-OUT
pad
0.5 +0.5 mA
Pi input power maximum power
dissipation, RFP
pad
- 100 mWSL3S1203_1213 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 4.4 — 17 March 2014
178844 25 of 37
NXP Semiconductors SL3S1203_1213
UCODE G2iL and G2iL+
12. Characteristics
12.1 UCODE G2iL, G2iL+ bare die characteristics
[1] Power to process a Query command.
[2] Measured with a 50 source impedance.
[3] At minimum operating power.
[4] It has to be assured the reader (system) is capable of providing enough field strength to give +12 dBm at the chip otherwise
communication with the chip will not be possible.
[5] Enables tag designs to be within ETSI limits for return link data rates of e.g. 320 kHz/M4.
[6] Will result in up to 10 dB higher tag backscatter power at high field strength.
[7] Results in approx. 18.5 dBm tag sensitivity on a 2 dBi gain antenna.
Table 27. G2iL, G2iL+ RF interface characteristics (RFN, RFP)
Symbol Parameter Conditions Min Typ Max Unit
fi input frequency 840 - 960 MHz
Normal mode - no external supply, read range reduction OFF
Pi(min) minimum input power READ sensitivity [1][2][7] - 18 - dBm
Pi(min) minimum input power WRITE sensitivity,
(write range/read
range - ratio)
- 30 - %
Ci input capacitance parallel [3] - 0.77 - pF
Q quality factor 915 MHz [3] - 9.7 - -
Z impedance 866 MHz [3] - 25 -j237 -
915 MHz [3] - 23 -j224 -
953 MHz [3] - 21 -j216 -
External supply mode - VDD pad supplied, read range reduction OFF
Pi(min) minimum input power Ext. supplied READ [1][2] - 27 - dBm
Ext. supplied WRITE [2] - 27 - dBm
Z impedance externally supplied,
915 MHz
[3] - 7 -j230 -
Read range reduction ON - no external supply
Pi(min) minimum input power 4R on READ [1][2][4] - +12 - dBm
4R on WRITE [2][4] - +12 - dBm
Z impedance 4R on, 915 MHz [3] - 18 -j2 -
Modulation resistance
R resistance modulation
resistance, max.
backscatter = off
[5] - 170 -
modulation
resistance, max.
backscatter = on
[6] - 55 - SL3S1203_1213 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 4.4 — 17 March 2014
178844 26 of 37
NXP Semiconductors SL3S1203_1213
UCODE G2iL and G2iL+
[1] Activates Digital Output (OUT pin), increases read range (external supplied).
[2] Activates Digital Output (OUT pin), increases read and write range (external supplied).
[3] Operating the chip outside the specified voltage range may lead to undefined behaviour.
[4] Either the voltage or the current needs to be above given values to guarantee specified functionality.
[5] No proper operation is guaranteed if both, voltage and current, limits are exceeded.
[1] Is the sum of the allowed capacitance of the VDD and OUT pin referenced to RFN.
[2] Is the maximum allowed RF input voltage coupling to the VDD/OUT pin to guarantee undisturbed chip functionality.
[3] Resistance between VDD and OUT pin in checked during power up only.
[4] Resistance range to achieve tamper alarm flag = 1.
[5] Resistance range to achieve tamper alarm flag = 0:
Table 28. VDD pin characteristics
Symbol Parameter Conditions Min Typ Max Unit
Minimum supply voltage/current - without assisted EEPROM WRITE [1][3][4]
VDD supply voltage minimum voltage - - 1.8 V
IDD supply current minimum current,
Iout-^- = 0 A
-- 7 A
Iout = 100 A -- 110 A
Minimum supply voltage/current - assisted EEPROM READ and WRITE [2][3][4]
VDD supply voltage minimum voltage,
Iout = 0 A
- 1.8 1.85 V
Iout = 100 A -- 1.95 V
IDD supply current minimum current,
Iout = 0 A
- - 125 A
Iout = 100 A -- 265 A
Maximum supply voltage/current [3][5]
VDD supply voltage absolute maximum
voltage
2.2 - - V
Ii(max) maximum input current absolute maximum
current
280 - - A
Table 29. G2iL, G2iL+ VDD and OUT pin characteristics
Symbol Parameter Conditions Min Typ Max Unit
OUT pin characteristics
VOL Low-level output voltage Isink = 1 mA - - 100 mV
VOH HIGH-level output voltage VDD = 1.8 V; Isource
= 100 µA
1.5 - - V
VDD/OUT pin characteristics
CL load capacitance VDD - OUT pin max. [1] - - 5 pF
Vo output voltage maximum RF peak
voltage on VDD-OUT
pins
[2] - - 500 mV
VDD/OUT pin tamper alarm characteristics [3]
RL(max) maximum load resistance resistance range high [4] - - <2 M
RL(min) minimum load resistance resistance range low [5] >20 - - MSL3S1203_1213 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 4.4 — 17 March 2014
178844 27 of 37
NXP Semiconductors SL3S1203_1213
UCODE G2iL and G2iL+
For further reading we recommend application note “FAQ UCODE G2iL+“ (Ref. 21)
describing the output characteristics more in detail. An example schematic is available in
application note “UCODE G2iL+ Demo board Manual“ (Ref. 22). The documents are
available at NXP Document Control or at the website www.nxp.com.
[1] Tamb 25 C
12.2 UCODE G2iL SOT886 characteristics
[1] Power to process a Query command.
[2] Measured with a 50 source impedance.
[3] At minimum operating power.
Remark: For DC and memory characteristics refer to Table 28, Table 29 and Table 30.
Table 30. G2iL, G2iL+ memory characteristics
Symbol Parameter Conditions Min Typ Max Unit
EEPROM characteristics
tret retention time Tamb 55 C 20 - - year
Nendu(W) write endurance 1000 10000[1] - cycle
Table 31. G2iL RF interface characteristics (RFN, RFP)
Symbol Parameter Conditions Min Typ Max Unit
Normal mode - no external supply, read range reduction OFF
Pi(min) minimum input power READ
sensitivity
[1][2] - 17.6 - dB
m
Z impedance 915 MHz [3] - 21 j199 -
Normal mode - externally supplied, read range reduction OFF
Pi(min) minimum input power READ
sensitivity
[1][2] - 27 - dB
m
Z impedance 915 MHz [3] - 5.6 j204 - SL3S1203_1213 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 4.4 — 17 March 2014
178844 28 of 37
NXP Semiconductors SL3S1203_1213
UCODE G2iL and G2iL+
13. Package outline
Fig 8. Package outline SOT886
Outline References
version
European
projection Issue date
IEC JEDEC JEITA
SOT886 MO-252
sot886_po
04-07-22
12-01-05
Unit
mm
max
nom
min
0.5 0.04 1.50
1.45
1.40
1.05
1.00
0.95
0.35
0.30
0.27
0.40
0.35
0.32
0.6
A(1)
Dimensions (mm are the original dimensions)
Notes
1. Including plating thickness.
2. Can be visible in some manufacturing processes.
XSON6: plastic extremely thin small outline package; no leads; 6 terminals; body 1 x 1.45 x 0.5 mm SOT886
A1 b
0.25
0.20
0.17
D E ee1
0.5
L L1
terminal 1
index area
D
E
e1
e
A1
b
L L 1
e1
0 1 2 mm
scale
1
6
2
5
3
4
6x
(2)
4x
(2)
ASL3S1203_1213 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 4.4 — 17 March 2014
178844 29 of 37
NXP Semiconductors SL3S1203_1213
UCODE G2iL and G2iL+
14. Packing information
14.1 Wafer
See Ref. 20 “Data sheet - Delivery type description – General specification for 8” wafer on
UV-tape with electronic fail die marking, BU-ID document number: 1093**”
14.2 SOT886
Part orientation T1. For details please refer to
http://www.standardics.nxp.com/packaging/packing/pdf/sot886.t1.t4.pdf
15. Abbreviations
Table 32. Abbreviations
Acronym Description
CRC Cyclic Redundancy Check
CW Continuous Wave
DSB-ASK Double Side Band-Amplitude Shift Keying
DC Direct Current
EAS Electronic Article Surveillance
EEPROM Electrically Erasable Programmable Read Only Memory
EPC Electronic Product Code (containing Header, Domain Manager, Object Class
and Serial Number)
FM0 Bi phase space modulation
G2 Generation 2
IC Integrated Circuit
PIE Pulse Interval Encoding
RRRR Real Read Range Reduction
PSF Product Status Flag
RF Radio Frequency
UHF Ultra High Frequency
SECS Semi Equipment Communication Standard
TID Tag IDentifier SL3S1203_1213 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 4.4 — 17 March 2014
178844 30 of 37
NXP Semiconductors SL3S1203_1213
UCODE G2iL and G2iL+
16. References
[1] EPCglobal: EPC Radio-Frequency Identity Protocols Class-1 Generation-2 UHF
RFID Protocol for Communications at 860 MHz – 960 MHz, Version 1.1.0
(December 17, 2005)
[2] EPCglobal: EPC Tag Data Standards
[3] EPCglobal (2004): FMCG RFID Physical Requirements Document (draft)
[4] EPCglobal (2004): Class-1 Generation-2 UHF RFID Implementation Reference
(draft)
[5] European Telecommunications Standards Institute (ETSI), EN 302 208:
Electromagnetic compatibility and radio spectrum matters (ERM) – Radio-frequency
identification equipment operating in the band 865 MHz to 868 MHz with power
levels up to 2 W, Part 1 – Technical characteristics and test methods
[6] European Telecommunications Standards Institute (ETSI), EN 302 208:
Electromagnetic compatibility and radio spectrum matters (ERM) – Radio-frequency
identification equipment operating in the band 865 MHz to 868 MHz with power
levels up to 2 W, Part 2 – Harmonized EN under article 3.2 of the R&TTE directive
[7] [CEPT1]: CEPT REC 70-03 Annex 1
[8] [ETSI1]: ETSI EN 330 220-1, 2
[9] [ETSI3]: ETSI EN 302 208-1, 2 V<1.1.1> (2004-09-Electromagnetic compatibility
And Radio spectrum Matters (ERM) Radio Frequency Identification Equipment
operating in the band 865 - MHz to 868 MHz with power levels up to 2 W Part 1:
Technical characteristics and test methods.
[10] [FCC1]: FCC 47 Part 15 Section 247
[11] ISO/IEC Directives, Part 2: Rules for the structure and drafting of International
Standards
[12] ISO/IEC 3309: Information technology – Telecommunications and information
exchange between systems – High-level data link control (HDLC) procedures –
Frame structure
[13] ISO/IEC 15961: Information technology, Automatic identification and data capture –
Radio frequency identification (RFID) for item management – Data protocol:
application interface
[14] ISO/IEC 15962: Information technology, Automatic identification and data capture
techniques – Radio frequency identification (RFID) for item management – Data
protocol: data encoding rules and logical memory functions
[15] ISO/IEC 15963: Information technology — Radio frequency identification for item
management — Unique identification for RF tags
[16] ISO/IEC 18000-1: Information technology — Radio frequency identification for item
management — Part 1: Reference architecture and definition of parameters to be
standardized
[17] ISO/IEC 18000-6: Information technology automatic identification and data capture
techniques — Radio frequency identification for item management air interface —
Part 6: Parameters for air interface communications at 860–960 MHz
[18] ISO/IEC 19762: Information technology AIDC techniques – Harmonized vocabulary
– Part 3: radio-frequency identification (RFID) SL3S1203_1213 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 4.4 — 17 March 2014
178844 31 of 37
NXP Semiconductors SL3S1203_1213
UCODE G2iL and G2iL+
[19] U.S. Code of Federal Regulations (CFR), Title 47, Chapter I, Part 15:
Radio-frequency devices, U.S. Federal Communications Commission.
[20] Data sheet - Delivery type description – General specification for 8” wafer on
UV-tape with electronic fail die marking, BU-ID document number: 1093**4
[21] Application note - FAQ UCODE G2i, BU-ID document number: AN10940
[22] Application note - UCODE G2iM+ demo board documentation, BU-ID document
number: AN11237
4. ** ... document version numberSL3S1203_1213 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 4.4 — 17 March 2014
178844 32 of 37
NXP Semiconductors SL3S1203_1213
UCODE G2iL and G2iL+
17. Revision history
Table 33. Revision history
Document ID Release date Data sheet status Change notice Supersedes
SL3S1203_1213 v.4.4 20140317 Product data sheet - SL3S1203_1213 v.4.3
Modifications: • Table 8 “G2iL, G2iL+ overall memory map”: Table notes updated
• Figure 5 “G2iL TID memory structure”: TIDs updated
SL3S1203_1213 v.4.3 20131127 Product data sheet - SL3S1203_1213 v.4.2
Modifications: • Figure 5 “G2iL TID memory structure”: updated
SL3S1203_1213 v.4.2 20130701 Product data sheet - SL3S1203_1213 v.4.1
Modifications: • Update of delivery form
• Update RF field detection
SL3S1203_1213 v.4.1 20120917 Product data sheet - SL3S1203_1213 v.4.0
Modifications: • Update of delivery form
SL3S1203_1213 v.4.0 20120227 Product data sheet - SL3S1203_1213 v.3.9
Modifications: • Figure 4 “G2iL wafer layout”: Figure notes (1) and (2) updated
SL3S1203_1213 v.3.9 20120130 Product data sheet - SL3S1203_1213 v.3.8
Modifications: • Table 6 “Specifications”: “Passivation on front” updated
• Section 15.2.1 “General assembly recommendations”: updated
SL3S1203_1213 v.3.8 20120111 Product data sheet - SL3S1203_1213 v.3.7
Modifications: • Section 8.1 “Wafer layout”: Figure notes (1) and (2) updated
SL3S1203_1213 v.3.7 20111124 Product data sheet - SL3S1203_1213 v.3.6
Modifications: • Table 11 “G2iL, G2iL+ overall memory map”: updated
• Table 34 “G2iL, G2iL+ RF interface characteristics (RFN, RFP)”: updated
SL3S1203_1213 v.3.6 20110803 Product data sheet - SL3S1203_1213 v.3.5
Modifications: • Real Read Range Reduction feature added to G2iL
SL3S1203_1213 v.3.5 20110531 Product data sheet - SL3S1203_1213 v.3.4
Modifications: • Superfluous text removed from Table 6
SL3S1203_1213 v.3.4 20110511 Product data sheet - SL3S1203_1213 v.3.3
Modifications: • Security status changed into COMPANY PUBLIC
• Delivery form of FCS2 strap added
• Section 13 “Package information”, Section 15 “Handling information” and Section 16
“Packing information” added
SL3S1203_1213 v.3.3 20110131 Product data sheet - SL3S1203_1213 v.3.2
Modifications: • Section 4 “Ordering information”: new types SL3S1203FUD and SL3S1213FUD added
• Section 9 “Mechanical specification”: updated according to the new types
• Replaced wording of “ChangeStatus” with “ChangeConfig”
SL3S1203_1213 v.3.2 20101109 Product data sheet - SL3S1203_1213 v.3.1
Modifications: • Version SOT886F1 added
• Section 5 “Marking”, Section 13 “Package outline” and Section 14 “Packing information”
added
SL3S1203_1213 v.3.1 20100922 Product data sheet - SL3S1203_1213 v.3.0
Modifications: • General Modifications
SL3S1203_1213 v.3.0 20100621 Product data sheet - 178810SL3S1203_1213 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 4.4 — 17 March 2014
178844 33 of 37
NXP Semiconductors SL3S1203_1213
UCODE G2iL and G2iL+
Modifications: • General update
178810 20100304 Objective data sheet - -
Table 33. Revision history …continued
Document ID Release date Data sheet status Change notice SupersedesSL3S1203_1213 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 4.4 — 17 March 2014
178844 34 of 37
NXP Semiconductors SL3S1203_1213
UCODE G2iL and G2iL+
18. Legal information
18.1 Data sheet status
[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
18.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to offer functions and qualities beyond those described in the
Product data sheet.
18.3 Disclaimers
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information. NXP Semiconductors takes no
responsibility for the content in this document if provided by an information
source outside of NXP Semiconductors.
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors and its suppliers accept no liability for
inclusion and/or use of NXP Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at the customer’s own
risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and operation of their applications
and products using NXP Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or customer product
design. It is customer’s sole responsibility to determine whether the NXP
Semiconductors product is suitable and fit for the customer’s applications and
products planned, as well as for the planned application and use of
customer’s third party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks associated with their
applications and products.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
third party customer(s). Customer is responsible for doing all necessary
testing for the customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications and
the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Document status[1][2] Product status[3] Definition
Objective [short] data sheet Development This document contains data from the objective specification for product development.
Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.
Product [short] data sheet Production This document contains the product specification. SL3S1203_1213 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 4.4 — 17 March 2014
178844 35 of 37
NXP Semiconductors SL3S1203_1213
UCODE G2iL and G2iL+
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Non-automotive qualified products — Unless this data sheet expressly
states that this specific NXP Semiconductors product is automotive qualified,
the product is not suitable for automotive use. It is neither qualified nor tested
in accordance with automotive testing or application requirements. NXP
Semiconductors accepts no liability for inclusion and/or use of
non-automotive qualified products in automotive equipment or applications.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards, customer
(a) shall use the product without NXP Semiconductors’ warranty of the
product for such automotive applications, use and specifications, and (b)
whenever customer uses the product for automotive applications beyond
NXP Semiconductors’ specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies NXP Semiconductors for any
liability, damages or failed product claims resulting from customer design and
use of the product for automotive applications beyond NXP Semiconductors’
standard warranty and NXP Semiconductors’ product specifications.
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
18.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
UCODE — is a trademark of NXP Semiconductors N.V.
19. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.comSL3S1203_1213 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 4.4 — 17 March 2014
178844 36 of 37
NXP Semiconductors SL3S1203_1213
UCODE G2iL and G2iL+
20. Tables
Table 1. Ordering information. . . . . . . . . . . . . . . . . . . . . .3
Table 2. Marking codes . . . . . . . . . . . . . . . . . . . . . . . . . .3
Table 3. Pin description bare die . . . . . . . . . . . . . . . . . . .5
Table 4. Pin description SOT886 . . . . . . . . . . . . . . . . . . .5
Table 5. Specifications . . . . . . . . . . . . . . . . . . . . . . . . . . .7
Table 6. Overview of G2iL and G2iL+ features . . . . . . . .9
Table 7. G2iL memory sections . . . . . . . . . . . . . . . . . . .10
Table 8. G2iL, G2iL+ overall memory map. . . . . . . . . . . 11
Table 9. ChangeConfig custom command . . . . . . . . . . .16
Table 10. ChangeConfig custom command reply. . . . . . .16
Table 11. ChangeConfig command-response table . . . . .16
Table 12. Address 200h to 207h . . . . . . . . . . . . . . . . . . .18
Table 13. Address 208h to 20Fh . . . . . . . . . . . . . . . . . . .18
Table 14. ReadProtect command. . . . . . . . . . . . . . . . . . .19
Table 15. G2iL reply to a successful ReadProtect
procedure . . . . . . . . . . . . . . . . . . . . . . . . . . . . .19
Table 16. ReadProtect command-response table . . . . . .19
Table 17. Reset ReadProtect command . . . . . . . . . . . . .20
Table 18. G2iL reply to a successful Reset
ReadProtect command. . . . . . . . . . . . . . . . . . .20
Table 19. Reset ReadProtect command-response
table . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Table 20. ChangeEAS command . . . . . . . . . . . . . . . . . . 22
Table 21. G2iL reply to a successful ChangeEAS
command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
Table 22. ChangeEAS command-response table . . . . . . 22
Table 23. EAS_Alarm command . . . . . . . . . . . . . . . . . . . 23
Table 24. G2iL reply to a successful EAS_Alarm c
ommand . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
Table 25. EAS_Alarm command-response table . . . . . . 23
Table 26. Limiting values[1][2] . . . . . . . . . . . . . . . . . . . . . . 24
Table 27. G2iL, G2iL+ RF interface characteristics
(RFN, RFP) . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
Table 28. VDD pin characteristics . . . . . . . . . . . . . . . . . . 26
Table 29. G2iL, G2iL+ VDD and OUT
pin characteristics . . . . . . . . . . . . . . . . . . . . . . 26
Table 30. G2iL, G2iL+ memory characteristics . . . . . . . . 27
Table 31. G2iL RF interface characteristics
(RFN, RFP) . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
Table 32. Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . 29
Table 33. Revision history . . . . . . . . . . . . . . . . . . . . . . . . 32
21. Figures
Fig 1. Block diagram of G2iL IC . . . . . . . . . . . . . . . . . . .4
Fig 2. Pinning bare die. . . . . . . . . . . . . . . . . . . . . . . . . . .5
Fig 3. Pin configuration for SOT886 . . . . . . . . . . . . . . . .5
Fig 4. G2iL wafer layout. . . . . . . . . . . . . . . . . . . . . . . . . .6
Fig 5. G2iL TID memory structure . . . . . . . . . . . . . . . . .12
Fig 6. Schematic of connecting VDD and OUT pad
with a predetermined breaking point to turn a
standard RFID label into a wireless safety seal. .14
Fig 7. Schematic of external power supply . . . . . . . . . .16
Fig 8. Package outline SOT886. . . . . . . . . . . . . . . . . . .28NXP Semiconductors SL3S1203_1213
UCODE G2iL and G2iL+
© NXP Semiconductors N.V. 2014. All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 17 March 2014
178844
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
22. Contents
1 General description . . . . . . . . . . . . . . . . . . . . . . 1
2 Features and benefits . . . . . . . . . . . . . . . . . . . . 1
2.1 Key features . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
2.1.1 Memory. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
2.2 Key benefits . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
2.2.1 End user benefit . . . . . . . . . . . . . . . . . . . . . . . . 2
2.2.2 Antenna design benefits . . . . . . . . . . . . . . . . . . 2
2.2.3 Label manufacturer benefit. . . . . . . . . . . . . . . . 2
2.3 Custom commands. . . . . . . . . . . . . . . . . . . . . . 2
3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
3.1 Markets. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
3.2 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
4 Ordering information. . . . . . . . . . . . . . . . . . . . . 3
5 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
6 Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . 4
7 Pinning information. . . . . . . . . . . . . . . . . . . . . . 5
7.1 Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 5
8 Wafer layout . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
8.1 Wafer layout . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
9 Mechanical specification . . . . . . . . . . . . . . . . . 7
9.1 Wafer specification . . . . . . . . . . . . . . . . . . . . . . 7
9.1.1 Wafer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
9.1.2 Fail die identification . . . . . . . . . . . . . . . . . . . . 8
9.1.3 Map file distribution. . . . . . . . . . . . . . . . . . . . . . 8
10 Functional description . . . . . . . . . . . . . . . . . . . 8
10.1 Air interface standards . . . . . . . . . . . . . . . . . . . 8
10.2 Power transfer . . . . . . . . . . . . . . . . . . . . . . . . . 8
10.3 Data transfer. . . . . . . . . . . . . . . . . . . . . . . . . . . 9
10.3.1 Reader to tag Link . . . . . . . . . . . . . . . . . . . . . . 9
10.3.2 Tag to reader Link. . . . . . . . . . . . . . . . . . . . . . . 9
10.4 G2iL and G2iL+ differences . . . . . . . . . . . . . . . 9
10.5 Supported commands . . . . . . . . . . . . . . . . . . 10
10.6 G2iL, G2iL+ memory . . . . . . . . . . . . . . . . . . . 10
10.6.1 G2iL, G2iL+ overall memory map. . . . . . . . . . 11
10.6.2 G2iL TID memory details . . . . . . . . . . . . . . . . 12
10.7 Custom commands. . . . . . . . . . . . . . . . . . . . . 13
10.7.1 ChangeConfig. . . . . . . . . . . . . . . . . . . . . . . . . 13
G2iL, G2iL+ special features . . . . . . . . . . . . . .13
10.7.2 G2iL, G2iL+ special features
control mechanism . . . . . . . . . . . . . . . . . . . . . 17
10.7.3 ReadProtect . . . . . . . . . . . . . . . . . . . . . . . . . . 18
10.7.4 Reset ReadProtect3 . . . . . . . . . . . . . . . . . . . . 19
10.7.5 ChangeEAS3 . . . . . . . . . . . . . . . . . . . . . . . . . 21
10.7.6 EAS_Alarm . . . . . . . . . . . . . . . . . . . . . . . . . . 22
11 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . 24
12 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . 25
12.1 UCODE G2iL, G2iL+ bare die characteristics 25
12.2 UCODE G2iL SOT886 characteristics . . . . . . 27
13 Package outline. . . . . . . . . . . . . . . . . . . . . . . . 28
14 Packing information . . . . . . . . . . . . . . . . . . . . 29
14.1 Wafer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
14.2 SOT886 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
15 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . 29
16 References. . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
17 Revision history . . . . . . . . . . . . . . . . . . . . . . . 32
18 Legal information . . . . . . . . . . . . . . . . . . . . . . 34
18.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 34
18.2 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . 34
18.3 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . 34
18.4 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . 35
19 Contact information . . . . . . . . . . . . . . . . . . . . 35
20 Tables . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36
21 Figures . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36
22 Contents. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37
1. Introduction
This document describes the functionality and electrical specifications of the
transceiver IC PN512.
The PN512 is a highly integrated transceiver IC for contactless communication at
13.56 MHz. This transceiver IC utilizes an outstanding modulation and demodulation
concept completely integrated for different kinds of contactless communication methods
and protocols at 13.56 MHz.
1.1 Different available versions
The PN512 is available in three versions:
• PN5120A0HN1/C2 (HVQFN32), PN5120A0HN/C2 (HVQFN40) and PN5120A0ET/C2
(TFBGA64), hereafter named as version 2.0
• PN512AA0HN1/C2 (HVQFN32) and PN512AA0HN1/C2BI (HVQFN32 with Burn In),
hereafter named as industrial version, fulfilling the automotive qualification stated in
AEC-Q100 grade 3 from the Automotive Electronics Council, defining the critical
stress test qualification for automotive integrated circuits (ICs).
• PN5120A0HN1/C1(HVQFN32) and PN5120A0HN/C1 (HVQFN40), hereafter named
as version 1.0
The data sheet describes the functionality for the industrial version and version 2.0. The
differences of the version 1.0 to the version 2.0 are summarized in Section 21. The
industrial version has only differences within the outlined characteristics and limitations.
2. General description
The PN512 transceiver ICs support 4 different operating modes
• Reader/Writer mode supporting ISO/IEC 14443A/MIFARE and FeliCa scheme
• Reader/Writer mode supporting ISO/IEC 14443B
• Card Operation mode supporting ISO/IEC 14443A/MIFARE and FeliCa scheme
• NFCIP-1 mode
Enabled in Reader/Writer mode for ISO/IEC 14443A/MIFARE, the PN512’s internal
transmitter part is able to drive a reader/writer antenna designed to communicate with
ISO/IEC 14443A/ MIFARE cards and transponders without additional active circuitry. The
receiver part provides a robust and efficient implementation of a demodulation and
PN512
Full NFC Forum compliant solution
Rev. 4.5 — 17 December 2013
111345
Product data sheet
COMPANY PUBLICPN512 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 4.5 — 17 December 2013
111345 2 of 136
NXP Semiconductors PN512
Full NFC Forum compliant solution
decoding circuitry for signals from ISO/IEC 14443A/MIFARE compatible cards and
transponders. The digital part handles the complete ISO/IEC 14443A framing and error
detection (Parity & CRC).
The PN512 supports MIFARE 1K or MIFARE 4K emulation products. The PN512 supports
contactless communication using MIFARE higher transfer speeds up to 424 kbit/s in both
directions.
Enabled in Reader/Writer mode for FeliCa, the PN512 transceiver IC supports the FeliCa
communication scheme. The receiver part provides a robust and efficient implementation
of the demodulation and decoding circuitry for FeliCa coded signals. The digital part
handles the FeliCa framing and error detection like CRC. The PN512 supports contactless
communication using FeliCa Higher transfer speeds up to 424 kbit/s in both directions.
The PN512 supports all layers of the ISO/IEC 14443B reader/writer communication
scheme, given correct implementation of additional components, like oscillator, power
supply, coil etc. and provided that standardized protocols, e.g. like ISO/IEC 14443-4
and/or ISO/IEC 14443B anticollision are correctly implemented.
In Card Operation mode, the PN512 transceiver IC is able to answer to a reader/writer
command either according to the FeliCa or ISO/IEC 14443A/MIFARE card interface
scheme. The PN512 generates the digital load modulated signals and in addition with an
external circuit the answer can be sent back to the reader/writer. A complete card
functionality is only possible in combination with a secure IC using the S2C interface.
Additionally, the PN512 transceiver IC offers the possibility to communicate directly to an
NFCIP-1 device in the NFCIP-1 mode. The NFCIP-1 mode offers different communication
mode and transfer speeds up to 424 kbit/s according to the Ecma 340 and ISO/IEC 18092
NFCIP-1 Standard. The digital part handles the complete NFCIP-1 framing and error
detection.
Various host controller interfaces are implemented:
• 8-bit parallel interface1
• SPI interface
• serial UART (similar to RS232 with voltage levels according pad voltage supply)
• I
2C interface.
A purchaser of this NXP IC has to take care for appropriate third party patent licenses.
1. 8-bit parallel Interface only available in HVQFN40 package.PN512 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 4.5 — 17 December 2013
111345 3 of 136
NXP Semiconductors PN512
Full NFC Forum compliant solution
3. Features and benefits
Highly integrated analog circuitry to demodulate and decode responses
Buffered output drivers for connecting an antenna with the minimum number of
external components
Integrated RF Level detector
Integrated data mode detector
Supports ISO/IEC 14443 A/MIFARE
Supports ISO/IEC 14443 B Read/Write modes
Typical operating distance in Read/Write mode up to 50 mm depending on the
antenna size and tuning
Typical operating distance in NFCIP-1 mode up to 50 mm depending on the antenna
size and tuning and power supply
Typical operating distance in ISO/IEC 14443A/MIFARE card or FeliCa Card Operation
mode of about 100 mm depending on the antenna size and tuning and the external
field strength
Supports MIFARE 1K or MIFARE 4K emulation encryption in Reader/Writer mode
ISO/IEC 14443A higher transfer speed communication at 212 kbit/s and 424 kbit/s
Contactless communication according to the FeliCa scheme at 212 kbit/s and
424 kbit/s
Integrated RF interface for NFCIP-1 up to 424 kbit/s
S2C interface
Additional power supply to directly supply the smart card IC connected via S2C
Supported host interfaces
SPI up to 10 Mbit/s
I
2C-bus interface up to 400 kBd in Fast mode, up to 3400 kBd in High-speed mode
RS232 Serial UART up to 1228.8 kBd, with voltage levels dependant on pin
voltage supply
8-bit parallel interface with and without Address Latch Enable
FIFO buffer handles 64 byte send and receive
Flexible interrupt modes
Hard reset with low power function
Power-down mode per software
Programmable timer
Internal oscillator for connection to 27.12 MHz quartz crystal
2.5 V to 3.6 V power supply
CRC coprocessor
Programmable I/O pins
Internal self-testPN512 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 4.5 — 17 December 2013
111345 4 of 136
NXP Semiconductors PN512
Full NFC Forum compliant solution
4. Quick reference data
[1] Supply voltages below 3 V reduce the performance in, for example, the achievable operating distance.
[2] VDDA, VDDD and VDD(TVDD) must always be the same voltage.
[3] VDD(PVDD) must always be the same or lower voltage than VDDD.
[4] Ipd is the total current for all supplies.
[5] IDD(PVDD) depends on the overall load at the digital pins.
[6] IDD(TVDD) depends on VDD(TVDD) and the external circuit connected to pins TX1 and TX2.
[7] During typical circuit operation, the overall current is below 100 mA.
[8] Typical value using a complementary driver configuration and an antenna matched to 40 between pins TX1 and TX2 at 13.56 MHz.
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
VDDA analog supply voltage VDD(PVDD) VDDA = VDDD = VDD(TVDD);
VSSA = VSSD = VSS(PVSS) = VSS(TVSS) =0V
[1][2] 2.5 - 3.6 V
VDDD digital supply voltage
VDD(TVDD) TVDD supply voltage
VDD(PVDD) PVDD supply voltage [3] 1.6 - 3.6 V
VDD(SVDD) SVDD supply voltage VSSA = VSSD = VSS(PVSS) = VSS(TVSS) = 0 V 1.6 - 3.6 V
Ipd power-down current VDDA = VDDD = VDD(TVDD) =VDD(PVDD) =3V
hard power-down; pin NRSTPD set LOW [4] --5 A
soft power-down; RF level detector on [4] - - 10 A
IDDD digital supply current pin DVDD; VDDD =3V - 6.5 9 mA
IDDA analog supply current pin AVDD; VDDA = 3 V, CommandReg register’s
RcvOff bit = 0
- 7 10 mA
pin AVDD; receiver switched off; VDDA = 3 V,
CommandReg register’s RcvOff bit = 1
- 3 5 mA
IDD(PVDD) PVDD supply current pin PVDD [5] - - 40 mA
IDD(TVDD) TVDD supply current pin TVDD; continuous wave [6][7][8] - 60 100 mA
Tamb ambient temperature HVQFN32, HVQFN40, TFBGA64 30 +85 C
lndustrial version:
Ipd power-down current VDDA = VDDD = VDD(TVDD) =VDD(PVDD) =3V
hard power-down; pin NRSTPD set LOW [4] - - 15 A
soft power-down; RF level detector on [4] - - 30 A
Tamb ambient temperature HVQFN32 40 - +90 CPN512 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 4.5 — 17 December 2013
111345 5 of 136
NXP Semiconductors PN512
Full NFC Forum compliant solution
5. Ordering information
Table 2. Ordering information
Type number Package
Name Description Version
PN5120A0HN1/C2 HVQFN32 plastic thermal enhanced very thin quad flat package; no leads;
32 terminal; body 5 5 0.85 mm
SOT617-1
PN5120A0HN/C2 HVQFN40 plastic thermal enhanced very thin quad flat package; no leads;
40 terminals; body 6 6 0.85 mm
SOT618-1
PN512AA0HN1/C2 HVQFN32 plastic thermal enhanced very thin quad flat package; no leads;
32 terminal; body 5 5 0.85 mm
SOT617-1
PN512AA0HN1/C2BI HVQFN32 plastic thermal enhanced very thin quad flat package; no leads;
32 terminal; body 5 5 0.85 mm
SOT617-1
PN5120A0HN1/C1 HVQFN32 plastic thermal enhanced very thin quad flat package; no leads;
32 terminal; body 5 5 0.85 mm
SOT617-1
PN5120A0HN/C1 HVQFN40 plastic thermal enhanced very thin quad flat package; no leads;
40 terminals; body 6 6 0.85 mm
SOT618-1
PN5120A0ET/C2 TFBGA64 plastic thin fine-pitch ball grid array package; 64 balls SOT1336-1PN512 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 4.5 — 17 December 2013
111345 6 of 136
NXP Semiconductors PN512
Full NFC Forum compliant solution
6. Block diagram
The analog interface handles the modulation and demodulation of the analog signals
according to the Card Receiving mode, Reader/Writer mode and NFCIP-1 mode
communication scheme.
The RF level detector detects the presence of an external RF-field delivered by the
antenna to the RX pin.
The Data mode detector detects a MIFARE, FeliCa or NFCIP-1 mode in order to prepare
the internal receiver to demodulate signals, which are sent to the PN512.
The communication (S2C) interface provides digital signals to support communication for
transfer speeds above 424 kbit/s and digital signals to communicate to a secure IC.
The contactless UART manages the protocol requirements for the communication
protocols in cooperation with the host. The FIFO buffer ensures fast and convenient data
transfer to and from the host and the contactless UART and vice versa.
Various host interfaces are implemented to meet different customer requirements.
Fig 1. Simplified block diagram of the PN512
001aaj627
HOST
ANTENNA FIFO
BUFFER
ANALOG
INTERFACE
CONTACTLESS
UART SERIAL UART
SPI
I
2C-BUS
REGISTER BANKPN512 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 4.5 — 17 December 2013
111345 7 of 136
NXP Semiconductors PN512
Full NFC Forum compliant solution
Fig 2. Detailed block diagram of the PN512
001aak602
DVDD
NRSTPD
IRQ
MFIN
MFOUT
SVDD
OSCIN
OSCOUT
VMID AUX1 AUX2 RX TVSS TX1 TX2 TVDD
16 19 20 17 10, 14 11 13 12
DVSS
AVDD
SDA/NSS/RX EA I2C PVDD PVSS
24 32 1 52
D1/ADR_5
25
D2/ADR_4
26
D3/ADR_3
27
D4/ADR_2
28
D5/ADR_1/
SCK/DTRQ
29
D6/ADR_0/
MOSI/MX
30
D7/SCL/
MISO/TX
31
AVSS
3
6
23
7
8
9
21
22
4
15
18
FIFO CONTROL
MIFARE CLASSIC UNIT
STATE MACHINE
COMMAND REGISTER
PROGRAMABLE TIMER
INTERRUPT CONTROL
CRC16
GENERATION AND CHECK
PARALLEL/SERIAL
CONVERTER
SERIAL DATA SWITCH
TRANSMITTER CONTROL
BIT COUNTER
PARITY GENERATION AND CHECK
FRAME GENERATION AND CHECK
BIT DECODING BIT ENCODING
RANDOM NUMBER
GENERATOR
ANALOG TO DIGITAL
CONVERTER
I-CHANNEL
AMPLIFIER
ANALOG TEST
MULTIPLEXOR
AND
DIGITAL TO
ANALOG
CONVERTER
I-CHANNEL
DEMODULATOR
Q-CHANNEL
AMPLIFIER
CLOCK
GENERATION,
FILTERING AND
DISTRIBUTION
Q-CLOCK
GENERATION
OSCILLATOR
TEMPERATURE
SENSOR
Q-CHANNEL
DEMODULATOR
AMPLITUDE
RATING
REFERENCE
VOLTAGE
64-BYTE FIFO
BUFFER
CONTROL REGISTER
BANK
SPI, UART, I2C-BUS INTERFACE CONTROL
VOLTAGE
MONITOR
AND
POWER ON
DETECT
RESET
CONTROL
POWER-DOWN
CONTROLPN512 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 4.5 — 17 December 2013
111345 8 of 136
NXP Semiconductors PN512
Full NFC Forum compliant solution
7. Pinning information
7.1 Pinning
Fig 3. Pinning configuration HVQFN32 (SOT617-1)
Fig 4. Pinning configuration HVQFN40 (SOT618-1)
001aan212
PN512
Transparent top view
RX
SIGIN
SIGOUT
AVSS
NRSTPD AUX1
PVSS AUX2
DVSS OSCIN
DVDD OSCOUT
PVDD IRQ
A1 ALE SVDD TVSS TX1 TVDD TX2 TVSS AVDD VMID A0D7 D6 D5 D4 D3 D2 D1
8 17
7 18
6 19
5 20
4 21
3 22
2 23
1 24
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
terminal 1
index area
001aan213
PN512
AVSS
NRSTPD
SIGIN
AUX1
PVSS AUX2
DVSS OSCIN
DVDD OSCOUT
PVDD IRQ
A5 NWR
A4 NRD
A3 ALE
A2 NCS SIGOUT SVDD TVSS TX1 TVDD TX2 TVSS AVDD VMIDRX A1A0D7 D6 D5 D4 D3 D2 D1 D0
10 21
9 22
8 23
7 24
6 25
5 26
4 27
3 28
2 29
1 30 11121314151617181920 40393837363534333231
terminal 1
index area
Transparent top viewPN512 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 4.5 — 17 December 2013
111345 9 of 136
NXP Semiconductors PN512
Full NFC Forum compliant solution
Fig 5. Pin configuration TFBGA64 (SOT1336-1)
aaa-005873
TFBGA64
Transparent top view
ball A1
index area
H
G
F
E
D
C
B
A
1 3 5 78 246PN512 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 4.5 — 17 December 2013
111345 10 of 136
NXP Semiconductors PN512
Full NFC Forum compliant solution
7.2 Pin description
Table 3. Pin description HVQFN32
Pin Symbol Type Description
1 A1 I Address Line
2 PVDD PWR Pad power supply
3 DVDD PWR Digital Power Supply
4 DVSS PWR Digital Ground
5 PVSS PWR Pad power supply ground
6 NRSTPD I Not Reset and Power Down: When LOW, internal current sinks are switched off, the
oscillator is inhibited, and the input pads are disconnected from the outside world. With
a positive edge on this pin the internal reset phase starts.
7 SIGIN I Communication Interface Input: accepts a digital, serial data stream
8 SIGOUT O Communication Interface Output: delivers a serial data stream
9 SVDD PWR S2C Pad Power Supply: provides power to the S2C pads
10 TVSS PWR Transmitter Ground: supplies the output stage of TX1 and TX2
11 TX1 O Transmitter 1: delivers the modulated 13.56 MHz energy carrier
12 TVDD PWR Transmitter Power Supply: supplies the output stage of TX1 and TX2
13 TX2 O Transmitter 2: delivers the modulated 13.56 MHz energy carrier
14 TVSS PWR Transmitter Ground: supplies the output stage of TX1 and TX2
15 AVDD PWR Analog Power Supply
16 VMID PWR Internal Reference Voltage: This pin delivers the internal reference voltage.
17 RX I Receiver Input
18 AVSS PWR Analog Ground
19 AUX1 O Auxiliary Outputs: These pins are used for testing.
20 AUX2 O
21 OSCIN I Crystal Oscillator Input: input to the inverting amplifier of the oscillator. This pin is
also the input for an externally generated clock (fosc = 27.12 MHz).
22 OSCOUT O Crystal Oscillator Output: Output of the inverting amplifier of the oscillator.
23 IRQ O Interrupt Request: output to signal an interrupt event
24 ALE I Address Latch Enable: signal to latch AD0 to AD5 into the internal address latch
when HIGH.
25 to 31 D1 to D7 I/O 8-bit Bi-directional Data Bus.
Remark: An 8-bit parallel interface is not available.
Remark: If the host controller selects I2C as digital host controller interface, these pins
can be used to define the I2C address.
Remark: For serial interfaces this pins can be used for test signals or I/Os.
32 A0 I Address LinePN512 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 4.5 — 17 December 2013
111345 11 of 136
NXP Semiconductors PN512
Full NFC Forum compliant solution
Table 4. Pin description HVQFN40
Pin Symbol Type Description
1 to 4 A2 to A5 I Address Line
5 PVDD PWR Pad power supply
6 DVDD PWR Digital Power Supply
7 DVSS PWR Digital Ground
8 PVSS PWR Pad power supply ground
9 NRSTPD I Not Reset and Power Down: When LOW, internal current sinks are switched off, the
oscillator is inhibited, and the input pads are disconnected from the outside world. With
a positive edge on this pin the internal reset phase starts.
10 SIGIN I Communication Interface Input: accepts a digital, serial data stream
11 SIGOUT O Communication Interface Output: delivers a serial data stream
12 SVDD PWR S2C Pad Power Supply: provides power to the S2C pads
13 TVSS PWR Transmitter Ground: supplies the output stage of TX1 and TX2
14 TX1 O Transmitter 1: delivers the modulated 13.56 MHz energy carrier
15 TVDD PWR Transmitter Power Supply: supplies the output stage of TX1 and TX2
16 TX2 O Transmitter 2: delivers the modulated 13.56 MHz energy carrier
17 TVSS PWR Transmitter Ground: supplies the output stage of TX1 and TX2
18 AVDD PWR Analog Power Supply
19 VMID PWR Internal Reference Voltage: This pin delivers the internal reference voltage.
20 RX I Receiver Input
21 AVSS PWR Analog Ground
22 AUX1 O Auxiliary Outputs: These pins are used for testing.
23 AUX2 O
24 OSCIN I Crystal Oscillator Input: input to the inverting amplifier of the oscillator. This pin is
also the input for an externally generated clock (fosc = 27.12 MHz).
25 OSCOUT O Crystal Oscillator Output: Output of the inverting amplifier of the oscillator.
26 IRQ O Interrupt Request: output to signal an interrupt event
27 NWR I Not Write: strobe to write data (applied on D0 to D7) into the PN512 register
28 NRD I Not Read: strobe to read data from the PN512 register (applied on D0 to D7)
29 ALE I Address Latch Enable: signal to latch AD0 to AD5 into the internal address latch
when HIGH.
30 NCS I Not Chip Select: selects and activates the host controller interface of the PN512
31 to 38 D0 to D7 I/O 8-bit Bi-directional Data Bus.
Remark: For serial interfaces this pins can be used for test signals or I/Os.
Remark: If the host controller selects I2C as digital host controller interface, these pins
can be used to define the I2C address.
39 to 40 A0 to A1 I Address LinePN512 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 4.5 — 17 December 2013
111345 12 of 136
NXP Semiconductors PN512
Full NFC Forum compliant solution
Table 5. Pin description TFBGA64
Pin Symbol Type Description
A1 to A5, A8,
B3, B4, B8, E1
PVSS PWR Pad power supply ground
A6 D4 I/O 8-bit Bi-directional Data Bus.
Remark: For serial interfaces this pins can be used for test signals or I/Os.
Remark: If the host controller selects I2C as digital host controller interface, these
pins can be used to define the I2C address.
A7 D2 I/O
B1 PVDD PWR Pad power supply
B2 A0 I Address Line
B5 D5 I/O 8-bit Bi-directional Data Bus.
Remark: For serial interfaces this pins can be used for test signals or I/Os.
Remark: If the host controller selects I2C as digital host controller interface, these
pins can be used to define the I2C address.
B6 D3 I/O
B7 D1 I/O
C1 DVDD PWR Digital Power Supply
C2 A1 I Address Line
C3 D7 I/O 8-bit Bi-directional Data Bus.
Remark: For serial interfaces this pins can be used for test signals or I/Os.
Remark: If the host controller selects I2C as digital host controller interface, these
pins can be used to define the I2C address.
C4 D6 I/O
C5 IRQ O Interrupt Request: output to signal an interrupt event
C6 ALE I Address Latch Enable: signal to latch AD0 to AD5 into the internal address latch
when HIGH.
C7, C8, D6, D8,
E6, E8, F7, G8,
H8
AVSS PWR Analog Ground
D1 DVSS PWR Digital Ground
D2 NRSTPD I Not Reset and Power Down: When LOW, internal current sinks are switched off,
the oscillator is inhibited, and the input pads are disconnected from the outside
world. With a positive edge on this pin the internal reset phase starts.
D3 to D5, E3 to
E5, F3, F4,
G1 to G6,
H1, H2, H6
TVSS PWR Transmitter Ground: supplies the output stage of TX1 and TX2
D7 OSCOUT O Crystal Oscillator Output: Output of the inverting amplifier of the oscillator.
E2 SIGIN I Communication Interface Input: accepts a digital, serial data stream
E7 OSCIN I Crystal Oscillator Input: input to the inverting amplifier of the oscillator. This pin
is also the input for an externally generated clock (fosc = 27.12 MHz).
F1 SVDD PWR S2C Pad Power Supply: provides power to the S2C pads
F2 SIGOUT O Communication Interface Output: delivers a serial data stream
F5 AUX1 O Auxiliary Outputs: These pins are used for testing.
F6 AUX2 O
F8 RX I Receiver Input
G7 VMID PWR Internal Reference Voltage: This pin delivers the internal reference voltage.
H3 TX1 O Transmitter 1: delivers the modulated 13.56 MHz energy carrierPN512 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 4.5 — 17 December 2013
111345 13 of 136
NXP Semiconductors PN512
Full NFC Forum compliant solution
H4 TVDD PWR Transmitter Power Supply: supplies the output stage of TX1 and TX2
H5 TX2 O Transmitter 2: delivers the modulated 13.56 MHz energy carrier
H7 AVDD PWR Analog Power Supply
Table 5. Pin description TFBGA64
Pin Symbol Type DescriptionPN512 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 4.5 — 17 December 2013
111345 14 of 136
NXP Semiconductors PN512
Full NFC Forum compliant solution
8. Functional description
The PN512 transmission module supports the Read/Write mode for
ISO/IEC 14443 A/MIFARE and ISO/IEC 14443 B using various transfer speeds and
modulation protocols.
PN512 transceiver IC supports the following operating modes:
• Reader/Writer mode supporting ISO/IEC 14443A/MIFARE and FeliCa scheme
• Card Operation mode supporting ISO/IEC 14443A/MIFARE and FeliCa scheme
• NFCIP-1 mode
The modes support different transfer speeds and modulation schemes. The following
chapters will explain the different modes in detail.
Note: All indicated modulation indices and modes in this chapter are system parameters.
This means that beside the IC settings a suitable antenna tuning is required to achieve the
optimum performance.
8.1 ISO/IEC 14443 A/MIFARE functionality
The physical level communication is shown in Figure 7.
The physical parameters are described in Table 4.
Fig 6. PN512 Read/Write mode
001aan218
BATTERY
reader/writer
contactless card
MICROCONTROLLER
PN512 ISO/IEC 14443 A CARD
Fig 7. ISO/IEC 14443 A/MIFARE Read/Write mode communication diagram
Table 6. Communication overview for ISO/IEC 14443 A/MIFARE reader/writer
Communication
direction
Signal type Transfer speed
106 kBd 212 kBd 424 kBd
Reader to card (send
data from the PN512
to a card)
reader side
modulation
100 % ASK 100 % ASK 100 % ASK
bit encoding modified Miller
encoding
modified Miller
encoding
modified Miller
encoding
bit length 128 (13.56 s) 64 (13.56 s) 32 (13.56 s)
(1)
(2)
001aan219
PN512
ISO/IEC 14443 A CARD
ISO/IEC 14443 A
READERPN512 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 4.5 — 17 December 2013
111345 15 of 136
NXP Semiconductors PN512
Full NFC Forum compliant solution
The PN512’s contactless UART and dedicated external host must manage the complete
ISO/IEC 14443 A/MIFARE protocol. Figure 8 shows the data coding and framing
according to ISO/IEC 14443 A/MIFARE.
The internal CRC coprocessor calculates the CRC value based on ISO/IEC 14443 A
part 3 and handles parity generation internally according to the transfer speed. Automatic
parity generation can be switched off using the ManualRCVReg register’s ParityDisable
bit.
8.2 ISO/IEC 14443 B functionality
The PN512 reader IC fully supports international standard ISO 14443 which includes
communication schemes ISO 14443 A and ISO 14443 B.
Refer to the ISO 14443 reference documents Identification cards - Contactless integrated
circuit cards - Proximity cards (parts 1 to 4).
Remark: NXP Semiconductors does not offer a software library to enable design-in of the
ISO 14443 B protocol.
Card to reader
(PN512 receives data
from a card)
card side
modulation
subcarrier load
modulation
subcarrier load
modulation
subcarrier load
modulation
subcarrier
frequency
13.56 MHz/16 13.56 MHz/16 13.56 MHz/16
bit encoding Manchester
encoding
BPSK BPSK
Table 6. Communication overview for ISO/IEC 14443 A/MIFARE reader/writer …continued
Communication
direction
Signal type Transfer speed
106 kBd 212 kBd 424 kBd
Fig 8. Data coding and framing according to ISO/IEC 14443 A
001aak585
ISO/IEC 14443 A framing at 106 kBd
8-bit data 8-bit data 8-bit data
odd
parity
odd
parity
start
odd
start bit is 1 parity
ISO/IEC 14443 A framing at 212 kBd, 424 kBd and 848 kBd
8-bit data 8-bit data 8-bit data
odd
parity
odd
parity
start
even
parity
start bit is 0
burst of 32
subcarrier clocks
even parity at the
end of the framePN512 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 4.5 — 17 December 2013
111345 16 of 136
NXP Semiconductors PN512
Full NFC Forum compliant solution
8.3 FeliCa reader/writer functionality
The FeliCa mode is the general reader/writer to card communication scheme according to
the FeliCa specification. The following diagram describes the communication on a
physical level, the communication overview describes the physical parameters.
The contactless UART of PN512 and a dedicated external host controller are required to
handle the complete FeliCa protocol.
8.3.1 FeliCa framing and coding
To enable the FeliCa communication a 6 byte preamble (00h, 00h, 00h, 00h, 00h, 00h)
and 2 bytes Sync bytes (B2h, 4Dh) are sent to synchronize the receiver.
The following Len byte indicates the length of the sent data bytes plus the LEN byte itself.
The CRC calculation is done according to the FeliCa definitions with the MSB first.
To transmit data on the RF interface, the host controller has to send the Len- and databytes
to the PN512's FIFO-buffer. The preamble and the sync bytes are generated by the
PN512 automatically and must not be written to the FIFO by the host controller. The
PN512 performs internally the CRC calculation and adds the result to the data frame.
Example for FeliCa CRC Calculation:
Fig 9. FeliCa reader/writer communication diagram
Table 7. Communication overview for FeliCa reader/writer
Communication
direction
FeliCa FeliCa Higher
transfer speeds
Transfer speed 212 kbit/s 424 kbit/s
PN512 card Modulation on reader side 8-30 % ASK 8-30 % ASK
bit coding Manchester Coding Manchester Coding
Bitlength (64/13.56) s (32/13.56) s
card PN512 Loadmodulation on card side > 12 % ASK > 12 % ASK
bit coding Manchester coding Manchester coding
2. PICC to PCD, > 12 % ASK loadmodulation
Manchester coded, baudrate 212 to 424 kbaud
1. PCD to PICC, 8-30 % ASK
Manchester coded, baudrate 212 to 424 kbaud
001aan214
PN512
FeliCa CARD
(PICC)
Felica READER
(PCD)
Table 8. FeliCa framing and coding
Preamble Sync Len n-Data CRC
00h 00h 00h 00h 00h 00h B2h 4Dh
Table 9. Start value for the CRC Polynomial: (00h), (00h)
Preamble Sync Len 2 Data Bytes CRC
00h 00h 00h 00h 00h 00h B2h 4Dh 03h ABh CDh 90h 35hPN512 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 4.5 — 17 December 2013
111345 17 of 136
NXP Semiconductors PN512
Full NFC Forum compliant solution
8.4 NFCIP-1 mode
The NFCIP-1 communication differentiates between an active and a Passive
Communication mode.
• Active Communication mode means both the initiator and the target are using their
own RF field to transmit data.
• Passive Communication mode means that the target answers to an initiator command
in a load modulation scheme. The initiator is active in terms of generating the RF field.
• Initiator: generates RF field at 13.56 MHz and starts the NFCIP-1 communication
• Target: responds to initiator command either in a load modulation scheme in Passive
Communication mode or using a self generated and self modulated RF field for Active
Communication mode.
In order to fully support the NFCIP-1 standard the PN512 supports the Active and Passive
Communication mode at the transfer speeds 106 kbit/s, 212 kbit/s and 424 kbit/s as
defined in the NFCIP-1 standard.
Fig 10. NFCIP-1 mode
001aan215
BATTERY
initiator: active target:
passive or active
MICROCONTROLLER
PN512
BATTERY
MICROCONTROLLER
PN512PN512 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 4.5 — 17 December 2013
111345 18 of 136
NXP Semiconductors PN512
Full NFC Forum compliant solution
8.4.1 Active communication mode
Active communication mode means both the initiator and the target are using their own
RF field to transmit data.
The contactless UART of PN512 and a dedicated host controller are required to handle
the NFCIP-1 protocol.
Note: Transfer Speeds above 424 kbit/s are not defined in the NFCIP-1 standard. The
PN512 supports these transfer speeds only with dedicated external circuits.
Fig 11. Active communication mode
Table 10. Communication overview for Active communication mode
Communication
direction
106 kbit/s 212 kbit/s 424 kbit/s 848 kbit/s 1.69 Mbit/s,
3.39 Mbit/s
Initiator Target According to
ISO/IEC 14443A
100 % ASK,
Modified
Miller Coded
According to FeliCa, 8-30 %
ASK Manchester Coded
digital capability to handle
this communication Target Initiator
host NFC INITIATOR
powered to
generate RF field
1. initiator starts communication at
selected transfer speed
Initial command
response
2. target answers at
the same transfer speed
host NFC INITIATOR
powered for digital
processing
host
host
NFC TARGET
NFC TARGET
powered for
digital processing
powered to
generate RF field
001aan216PN512 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 4.5 — 17 December 2013
111345 19 of 136
NXP Semiconductors PN512
Full NFC Forum compliant solution
8.4.2 Passive communication mode
Passive Communication mode means that the target answers to an initiator command in a
load modulation scheme. The initiator is active meaning generating the RF field.
The contactless UART of PN512 and a dedicated host controller are required to handle
the NFCIP-1 protocol.
Note: Transfer Speeds above 424 kbit/s are not defined in the NFCIP-1 standard. The
PN512 supports these transfer speeds only with dedicated external circuits.
Fig 12. Passive communication mode
Table 11. Communication overview for Passive communication mode
Communication
direction
106 kbit/s 212 kbit/s 424 kbit/s 848 kbit/s 1.69 Mbit/s,
3.39 Mbit/s
Initiator Target According to
ISO/IEC 14443A
100 % ASK,
Modified
Miller Coded
According to FeliCa, 8-30
% ASK Manchester Coded
digital capability to handle
this communication
Target Initiator According to
ISO/IEC 14443A
subcarrier load
modulation,
Manchester Coded
According to FeliCa, > 12 %
ASK Manchester Coded
host NFC INITIATOR
powered to
generate RF field
1. initiator starts communication
at selected transfer speed
2. targets answers using
load modulated data
at the same transfer speed
host NFC TARGET
powered for
digital processing
001aan217PN512 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 4.5 — 17 December 2013
111345 20 of 136
NXP Semiconductors PN512
Full NFC Forum compliant solution
8.4.3 NFCIP-1 framing and coding
The NFCIP-1 framing and coding in Active and Passive Communication mode is defined
in the NFCIP-1 standard.
8.4.4 NFCIP-1 protocol support
The NFCIP-1 protocol is not completely described in this document. For detailed
explanation of the protocol refer to the NFCIP-1 standard. However the datalink layer is
according to the following policy:
• Speed shall not be changed while continuum data exchange in a transaction.
• Transaction includes initialization and anticollision methods and data exchange (in
continuous way, meaning no interruption by another transaction).
In order not to disturb current infrastructure based on 13.56 MHz general rules to start
NFCIP-1 communication are defined in the following way.
1. Per default NFCIP-1 device is in Target mode meaning its RF field is switched off.
2. The RF level detector is active.
3. Only if application requires the NFCIP-1 device shall switch to Initiator mode.
4. Initiator shall only switch on its RF field if no external RF field is detected by RF Level
detector during a time of TIDT.
5. The initiator performs initialization according to the selected mode.
8.4.5 MIFARE Card operation mode
Table 12. Framing and coding overview
Transfer speed Framing and Coding
106 kbit/s According to the ISO/IEC 14443A/MIFARE scheme
212 kbit/s According to the FeliCa scheme
424 kbit/s According to the FeliCa scheme
Table 13. MIFARE Card operation mode
Communication
direction
ISO/IEC 14443A/
MIFARE
MIFARE Higher transfer speeds
transfer speed 106 kbit/s 212 kbit/s 424 kbit/s
reader/writer
PN512
Modulation on
reader side
100 % ASK 100 % ASK 100 % ASK
bit coding Modified Miller Modified Miller Modified Miller
Bitlength (128/13.56) s (64/13.56) s (32/13.56) s
PN512 reader/
writer
Modulation on
PN512 side
subcarrier load
modulation
subcarrier load
modulation
subcarrier load
modulation
subcarrier
frequency
13.56 MHz/16 13.56 MHz/16 13.56 MHz/16
bit coding Manchester coding BPSK BPSKPN512 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 4.5 — 17 December 2013
111345 21 of 136
NXP Semiconductors PN512
Full NFC Forum compliant solution
8.4.6 FeliCa Card operation mode
9. PN512 register SET
9.1 PN512 registers overview
Table 14. FeliCa Card operation mode
Communication
direction
FeliCa FeliCa Higher
transfer speeds
Transfer speed 212 kbit/s 424 kbit/s
reader/writer
PN512
Modulation on reader side 8-30 % ASK 8-30 % ASK
bit coding Manchester Coding Manchester Coding
Bitlength (64/13.56) s (32/13.56) s
PN512 reader/
writer
Load modulation on PN512
side
> 12 % ASK load
modulation
> 12 % ASK load
modulation
bit coding Manchester coding Manchester coding
Table 15. PN512 registers overview
Addr
(hex)
Register Name Function
Page 0: Command and Status
0 PageReg Selects the register page
1 CommandReg Starts and stops command execution
2 ComlEnReg Controls bits to enable and disable the passing of Interrupt Requests
3 DivlEnReg Controls bits to enable and disable the passing of Interrupt Requests
4 ComIrqReg Contains Interrupt Request bits
5 DivIrqReg Contains Interrupt Request bits
6 ErrorReg Error bits showing the error status of the last command executed
7 Status1Reg Contains status bits for communication
8 Status2Reg Contains status bits of the receiver and transmitter
9 FIFODataReg In- and output of 64 byte FIFO-buffer
A FIFOLevelReg Indicates the number of bytes stored in the FIFO
B WaterLevelReg Defines the level for FIFO under- and overflow warning
C ControlReg Contains miscellaneous Control Registers
D BitFramingReg Adjustments for bit oriented frames
E CollReg Bit position of the first bit collision detected on the RF-interface
F RFU Reserved for future use
Page 1: Command
0 PageReg Selects the register page
1 ModeReg Defines general modes for transmitting and receiving
2 TxModeReg Defines the data rate and framing during transmission
3 RxModeReg Defines the data rate and framing during receiving
4 TxControlReg Controls the logical behavior of the antenna driver pins TX1 and TX2
5 TxAutoReg Controls the setting of the antenna driversPN512 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 4.5 — 17 December 2013
111345 22 of 136
NXP Semiconductors PN512
Full NFC Forum compliant solution
6 TxSelReg Selects the internal sources for the antenna driver
7 RxSelReg Selects internal receiver settings
8 RxThresholdReg Selects thresholds for the bit decoder
9 DemodReg Defines demodulator settings
A FelNFC1Reg Defines the length of the valid range for the receive package
B FelNFC2Reg Defines the length of the valid range for the receive package
C MifNFCReg Controls the communication in ISO/IEC 14443/MIFARE and NFC
target mode at 106 kbit
D ManualRCVReg Allows manual fine tuning of the internal receiver
E TypeBReg Configure the ISO/IEC 14443 type B
F SerialSpeedReg Selects the speed of the serial UART interface
Page 2: CFG
0 PageReg Selects the register page
1 CRCResultReg Shows the actual MSB and LSB values of the CRC calculation
2
3 GsNOffReg Selects the conductance of the antenna driver pins TX1 and TX2 for
modulation, when the driver is switched off
4 ModWidthReg Controls the setting of the ModWidth
5 TxBitPhaseReg Adjust the TX bit phase at 106 kbit
6 RFCfgReg Configures the receiver gain and RF level
7 GsNOnReg Selects the conductance of the antenna driver pins TX1 and TX2 for
modulation when the drivers are switched on
8 CWGsPReg Selects the conductance of the antenna driver pins TX1 and TX2 for
modulation during times of no modulation
9 ModGsPReg Selects the conductance of the antenna driver pins TX1 and TX2 for
modulation during modulation
A TModeReg
TPrescalerReg
Defines settings for the internal timer
B
C TReloadReg Describes the 16-bit timer reload value
D
E TCounterValReg Shows the 16-bit actual timer value
F
Page 3: TestRegister
0 PageReg selects the register page
1 TestSel1Reg General test signal configuration
2 TestSel2Reg General test signal configuration and PRBS control
3 TestPinEnReg Enables pin output driver on 8-bit parallel bus (Note: For serial
interfaces only)
4 TestPin
ValueReg
Defines the values for the 8-bit parallel bus when it is used as I/O bus
5 TestBusReg Shows the status of the internal testbus
6 AutoTestReg Controls the digital selftest
Table 15. PN512 registers overview …continued
Addr
(hex)
Register Name FunctionPN512 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 4.5 — 17 December 2013
111345 23 of 136
NXP Semiconductors PN512
Full NFC Forum compliant solution
9.1.1 Register bit behavior
Depending on the functionality of a register, the access conditions to the register can vary.
In principle bits with same behavior are grouped in common registers. In Table 16 the
access conditions are described.
7 VersionReg Shows the version
8 AnalogTestReg Controls the pins AUX1 and AUX2
9 TestDAC1Reg Defines the test value for the TestDAC1
A TestDAC2Reg Defines the test value for the TestDAC2
B TestADCReg Shows the actual value of ADC I and Q
C-F RFT Reserved for production tests
Table 15. PN512 registers overview …continued
Addr
(hex)
Register Name Function
Table 16. Behavior of register bits and its designation
Abbreviation Behavior Description
r/w read and write These bits can be written and read by the -Controller. Since they
are used only for control means, there content is not influenced by
internal state machines, e.g. the PageSelect-Register may be
written and read by the -Controller. It will also be read by internal
state machines, but never changed by them.
dy dynamic These bits can be written and read by the -Controller.
Nevertheless, they may also be written automatically by internal
state machines, e.g. the Command-Register changes its value
automatically after the execution of the actual command.
r read only These registers hold bits, which value is determined by internal
states only, e.g. the CRCReady bit can not be written from
external but shows internal states.
w write only Reading these registers returns always ZERO.
RFU - These registers are reserved for future use.
In case of a PN512 Version version 2.0 (VersionReg = 82h) a
read access to these registers returns always the value “0”.
Nevertheless this is not guaranteed for future chips versions
where the value is undefined. In case of a write access, it is
recommended to write always the value “0”.
RFT - These registers are reserved for production tests and shall not be
changed.PN512 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 4.5 — 17 December 2013
111345 24 of 136
NXP Semiconductors PN512
Full NFC Forum compliant solution
9.2 Register description
9.2.1 Page 0: Command and status
9.2.1.1 PageReg
Selects the register page.
9.2.1.2 CommandReg
Starts and stops command execution.
Table 17. PageReg register (address 00h); reset value: 00h, 0000000b
7 6 5 4 3 2 1 0
UsePage Select 0 0 0 0 0 PageSelect
Access
Rights
r/w RFU RFU RFU RFU RFU r/w r/w
Table 18. Description of PageReg bits
Bit Symbol Description
7 UsePageSelect Set to logic 1, the value of PageSelect is used as register address A5
and A4. The LSB-bits of the register address are defined by the
address pins or the internal address latch, respectively.
Set to logic 0, the whole content of the internal address latch defines
the register address. The address pins are used as described in
Section 10.1 “Automatic microcontroller interface detection”.
6 to 2 - Reserved for future use.
1 to 0 PageSelect The value of PageSelect is used only if UsePageSelect is set to
logic 1. In this case it specifies the register page (which is A5 and A4
of the register address).
Table 19. CommandReg register (address 01h); reset value: 20h, 00100000b
7 6 5 4 3 2 1 0
0 0 RcvOff Power Down Command
Access
Rights
RFU RFU r/w dy dy dy dy dy
Table 20. Description of CommandReg bits
Bit Symbol Description
7 to 6 - Reserved for future use.
5 RcvOff Set to logic 1, the analog part of the receiver is switched off.
4 PowerDown Set to logic 1, Soft Power-down mode is entered.
Set to logic 0, the PN512 starts the wake up procedure. During this
procedure this bit still shows a 1. A 0 indicates that the PN512 is ready
for operations; see Section 16.2 “Soft power-down mode”.
Note: The bit Power Down cannot be set, when the command
SoftReset has been activated.
3 to 0 Command Activates a command according to the Command Code. Reading this
register shows, which command is actually executed (see Section 19.3
“PN512 command overview”).PN512 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 4.5 — 17 December 2013
111345 25 of 136
NXP Semiconductors PN512
Full NFC Forum compliant solution
9.2.1.3 CommIEnReg
Control bits to enable and disable the passing of interrupt requests.
Table 21. CommIEnReg register (address 02h); reset value: 80h, 10000000b
7 6 5 4 3 2 1 0
IRqInv TxIEn RxIEn IdleIEn HiAlertIEn LoAlertIEn ErrIEn TimerIEn
Access
Rights
r/w r/w r/w r/w r/w r/w r/w r/w
Table 22. Description of CommIEnReg bits
Bit Symbol Description
7 IRqInv Set to logic 1, the signal on pin IRQ is inverted with respect to bit IRq in the
register Status1Reg. Set to logic 0, the signal on pin IRQ is equal to bit IRq.
In combination with bit IRqPushPull in register DivIEnReg, the default value
of 1 ensures, that the output level on pin IRQ is 3-state.
6 TxIEn Allows the transmitter interrupt request (indicated by bit TxIRq) to be
propagated to pin IRQ.
5 RxIEn Allows the receiver interrupt request (indicated by bit RxIRq) to be
propagated to pin IRQ.
4 IdleIEn Allows the idle interrupt request (indicated by bit IdleIRq) to be propagated to
pin IRQ.
3 HiAlertIEn Allows the high alert interrupt request (indicated by bit HiAlertIRq) to be
propagated to pin IRQ.
2 LoAlertIEn Allows the low alert interrupt request (indicated by bit LoAlertIRq) to be
propagated to pin IRQ.
1 ErrIEn Allows the error interrupt request (indicated by bit ErrIRq) to be propagated
to pin IRQ.
0 TimerIEn Allows the timer interrupt request (indicated by bit TimerIRq) to be
propagated to pin IRQ. PN512 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 4.5 — 17 December 2013
111345 26 of 136
NXP Semiconductors PN512
Full NFC Forum compliant solution
9.2.1.4 DivIEnReg
Control bits to enable and disable the passing of interrupt requests.
Table 23. DivIEnReg register (address 03h); reset value: 00h, 00000000b
7 6 5 4 3 2 1 0
IRQPushPull 0 0 SiginActIEn ModeIEn CRCIEn RFOnIEn RFOffIEn
Access
Rights
r/w RFU RFU r/w r/w r/w r/w r/w
Table 24. Description of DivIEnReg bits
Bit Symbol Description
7 IRQPushPull Set to logic 1, the pin IRQ works as standard CMOS output pad.
Set to logic 0, the pin IRQ works as open drain output pad.
6 to 5 - Reserved for future use.
4 SiginActIEn Allows the SIGIN active interrupt request to be propagated to pin IRQ.
3 ModeIEn Allows the mode interrupt request (indicated by bit ModeIRq) to be
propagated to pin IRQ.
2 CRCIEn Allows the CRC interrupt request (indicated by bit CRCIRq) to be
propagated to pin IRQ.
1 RfOnIEn Allows the RF field on interrupt request (indicated by bit RfOnIRq) to
be propagated to pin IRQ.
0 RfOffIEn Allows the RF field off interrupt request (indicated by bit RfOffIRq) to
be propagated to pin IRQ.PN512 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 4.5 — 17 December 2013
111345 27 of 136
NXP Semiconductors PN512
Full NFC Forum compliant solution
9.2.1.5 CommIRqReg
Contains Interrupt Request bits.
Table 25. CommIRqReg register (address 04h); reset value: 14h, 00010100b
7 6 5 4 3 2 1 0
Set1 TxIRq RxIRq IdleIRq HiAlertIRq LoAlertIRq ErrIRq TimerIRq
Access
Rights
w dy dy dy dy dy dy dy
Table 26. Description of CommIRqReg bits
All bits in the register CommIRqReg shall be cleared by software.
Bit Symbol Description
7 Set1 Set to logic 1, Set1 defines that the marked bits in the register CommIRqReg
are set.
Set to logic 0, Set1 defines, that the marked bits in the register CommIRqReg
are cleared.
6 TxIRq Set to logic 1 immediately after the last bit of the transmitted data was sent out.
5 RxIRq Set to logic 1 when the receiver detects the end of a valid datastream.
If the bit RxNoErr in register RxModeReg is set to logic 1, bit RxIRq is only set
to logic 1 when data bytes are available in the FIFO.
4 IdleIRq Set to logic 1, when a command terminates by itself e.g. when the
CommandReg changes its value from any command to the Idle Command.
If an unknown command is started, the CommandReg changes its content to
the idle state and the bit IdleIRq is set. Starting the Idle Command by the
-Controller does not set bit IdleIRq.
3 HiAlertIRq Set to logic 1, when bit HiAlert in register Status1Reg is set. In opposition to
HiAlert, HiAlertIRq stores this event and can only be reset as indicated by bit
Set1.
2 LoAlertIRq Set to logic 1, when bit LoAlert in register Status1Reg is set. In opposition to
LoAlert, LoAlertIRq stores this event and can only be reset as indicated by bit
Set1.
1 ErrIRq Set to logic 1 if any error bit in the Error Register is set.
0 TimerIRq Set to logic 1 when the timer decrements the TimerValue Register to zero.PN512 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 4.5 — 17 December 2013
111345 28 of 136
NXP Semiconductors PN512
Full NFC Forum compliant solution
9.2.1.6 DivIRqReg
Contains Interrupt Request bits
Table 27. DivIRqReg register (address 05h); reset value: XXh, 000X00XXb
7 6 5 4 3 2 1 0
Set2 0 0 SiginActIRq ModeIRq CRCIRq RFOnIRq RFOffIRq
Access
Rights
w RFU RFU dy dy dy dy dy
Table 28. Description of DivIRqReg bits
All bits in the register DivIRqReg shall be cleared by software.
Bit Symbol Description
7 Set2 Set to logic 1, Set2 defines that the marked bits in the register
DivIRqReg are set.
Set to logic 0, Set2 defines, that the marked bits in the register
DivIRqReg are cleared
6 to 5 - Reserved for future use.
4 SiginActIRq Set to logic 1, when SIGIN is active. See Section 12.6 “S2C interface
support”. This interrupt is set when either a rising or falling signal edge
is detected.
3 ModeIRq Set to logic 1, when the mode has been detected by the Data mode
detector.
Note: The Data mode detector can only be activated by the AutoColl
command and is terminated automatically having detected the
Communication mode.
Note: The Data mode detector is automatically restarted after each RF
Reset.
2 CRCIRq Set to logic 1, when the CRC command is active and all data are
processed.
1 RFOnIRq Set to logic 1, when an external RF field is detected.
0 RFOffIRq Set to logic 1, when a present external RF field is switched off.PN512 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 4.5 — 17 December 2013
111345 29 of 136
NXP Semiconductors PN512
Full NFC Forum compliant solution
9.2.1.7 ErrorReg
Error bit register showing the error status of the last command executed.
[1] Command execution will clear all error bits except for bit TempErr. A setting by software is impossible.
Table 29. ErrorReg register (address 06h); reset value: 00h, 00000000b
7 6 5 4 3 2 1 0
WrErr TempErr RFErr BufferOvfl CollErr CRCErr ParityErr ProtocolErr
Access
Rights
r rr r r r r r
Table 30. Description of ErrorReg bits
Bit Symbol Description
7 WrErr Set to logic 1, when data is written into FIFO by the host controller
during the AutoColl command or MFAuthent command or if data is
written into FIFO by the host controller during the time between
sending the last bit on the RF interface and receiving the last bit on the
RF interface.
6 TempErr[1] Set to logic 1, if the internal temperature sensor detects overheating.
In this case, the antenna drivers are switched off automatically.
5 RFErr Set to logic 1, if in Active Communication mode the counterpart does
not switch on the RF field in time as defined in NFCIP-1 standard.
Note: RFErr is only used in Active Communication mode. The bits
RxFraming or the bits TxFraming has to be set to 01 to enable this
functionality.
4 BufferOvfl Set to logic 1, if the host controller or a PN512’s internal state machine
(e.g. receiver) tries to write data into the FIFO-bufferFIFO-buffer
although the FIFO-buffer is already full.
3 CollErr Set to logic 1, if a bit-collision is detected. It is cleared automatically at
receiver start-up phase. This bit is only valid during the bitwise
anticollision at 106 kbit. During communication schemes at 212 and
424 kbit this bit is always set to logic 1.
2 CRCErr Set to logic 1, if bit RxCRCEn in register RxModeReg is set and the
CRC calculation fails. It is cleared to 0 automatically at receiver
start-up phase.
1 ParityErr Set to logic 1, if the parity check has failed. It is cleared automatically
at receiver start-up phase. Only valid for ISO/IEC 14443A/MIFARE or
NFCIP-1 communication at 106 kbit.
0 ProtocolErr Set to logic 1, if one out of the following cases occur:
• Set to logic 1 if the SOF is incorrect. It is cleared automatically at
receiver start-up phase. The bit is only valid for 106 kbit in Active
and Passive Communication mode.
• If bit DetectSync in register ModeReg is set to logic 1 during
FeliCa communication or active communication with transfer
speeds higher than 106 kbit, the bit ProtocolErr is set to logic 1 in
case of a byte length violation.
• During the AutoColl command, bit ProtocolErr is set to logic 1, if
the bit Initiator in register ControlReg is set to logic 1.
• During the MFAuthent Command, bit ProtocolErr is set to logic 1,
if the number of bytes received in one data stream is incorrect.
• Set to logic 1, if the Miller Decoder detects 2 pulses below the
minimum time according to the ISO/IEC 14443A definitions.PN512 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 4.5 — 17 December 2013
111345 30 of 136
NXP Semiconductors PN512
Full NFC Forum compliant solution
9.2.1.8 Status1Reg
Contains status bits of the CRC, Interrupt and FIFO-buffer.
Table 31. Status1Reg register (address 07h); reset value: XXh, X100X01Xb
7 6 5 4 3 2 1 0
RFFreqOK CRCOk CRCReady IRq TRunning RFOn HiAlert LoAlert
Access
Rights
r r r r r rr r
Table 32. Description of Status1Reg bits
Bit Symbol Description
7 RFFreqOK Indicates if the frequency detected at the RX pin is in the range of
13.56 MHz.
Set to logic 1, if the frequency at the RX pin is in the range
12 MHz < RX pin frequency < 15 MHz.
Note: The value of RFFreqOK is not defined if the external RF
frequency is in the range from 9 to 12 MHz or in the range from
15 to 19 MHz.
6 CRCOk Set to logic 1, if the CRC Result is zero. For data transmission and
reception the bit CRCOk is undefined (use CRCErr in register
ErrorReg). CRCOk indicates the status of the CRC co-processor,
during calculation the value changes to ZERO, when the calculation is
done correctly, the value changes to ONE.
5 CRCReady Set to logic 1, when the CRC calculation has finished. This bit is only
valid for the CRC co-processor calculation using the command
CalcCRC.
4 IRq This bit shows, if any interrupt source requests attention (with respect
to the setting of the interrupt enable bits, see register CommIEnReg
and DivIEnReg).
3 TRunning Set to logic 1, if the PN512’s timer unit is running, e.g. the timer will
decrement the TCounterValReg with the next timer clock.
Note: In the gated mode the bit TRunning is set to logic 1, when the
timer is enabled by the register bits. This bit is not influenced by the
gated signal.
2 RFOn Set to logic 1, if an external RF field is detected. This bit does not store
the state of the RF field.
1 HiAlert Set to logic 1, when the number of bytes stored in the FIFO-buffer
fulfills the following equation:
Example:
FIFOLength = 60, WaterLevel = 4 HiAlert = 1
FIFOLength = 59, WaterLevel = 4 HiAlert = 0
0 LoAlert Set to logic 1, when the number of bytes stored in the FIFO-buffer
fulfills the following equation:
Example:
FIFOLength = 4, WaterLevel = 4 LoAlert = 1
FIFOLength = 5, WaterLevel = 4 LoAlert = 0
HiAlert 64 FIFOLength = – WaterLevel
LoAlert FIFOLength WaterLevel = PN512 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 4.5 — 17 December 2013
111345 31 of 136
NXP Semiconductors PN512
Full NFC Forum compliant solution
9.2.1.9 Status2Reg
Contains status bits of the Receiver, Transmitter and Data mode detector.
Table 33. Status2Reg register (address 08h); reset value: 00h, 00000000b
7 6 5 4 3 2 1 0
TempSensClear I2CForceHS 0 TargetActivated MFCrypto1On Modem State
Access
Rights
r/w r/w RFU dy dy r r r
Table 34. Description of Status2Reg bits
Bit Symbol Description
7 TempSensClear Set to logic 1, this bit clears the temperature error, if the temperature
is below the alarm limit of 125 C.
6 I2CForceHS I2C input filter settings. Set to logic 1, the I2C input filter is set to the
High-speed mode independent of the I2C protocol. Set to logic 0, the
I
2C input filter is set to the used I2C protocol.
5 - Reserved for future use.
4 TargetActivated Set to logic 1 if the Select command or if the Polling command was
answered. Note: This bit can only be set during the AutoColl
command in Passive Communication mode.
Note: This bit is cleared automatically by switching off the external
RF field.
3 MFCrypto1On This bit indicates that the MIFARE Crypto1 unit is switched on and
therefore all data communication with the card is encrypted.
This bit can only be set to logic 1 by a successful execution of the
MFAuthent Command. This bit is only valid in Reader/Writer mode
for MIFARE cards. This bit shall be cleared by software.
2 to 0 Modem State ModemState shows the state of the transmitter and receiver state
machines.
Value Description
000 IDLE
001 Wait for StartSend in register BitFramingReg
010 TxWait: Wait until RF field is present, if the bit TxWaitRF is
set to logic 1. The minimum time for TxWait is defined by the
TxWaitReg register.
011 Sending
100 RxWait: Wait until RF field is present, if the bit RxWaitRF is
set to logic 1. The minimum time for RxWait is defined by the
RxWaitReg register.
101 Wait for data
110 ReceivingPN512 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 4.5 — 17 December 2013
111345 32 of 136
NXP Semiconductors PN512
Full NFC Forum compliant solution
9.2.1.10 FIFODataReg
In- and output of 64 byte FIFO-buffer.
9.2.1.11 FIFOLevelReg
Indicates the number of bytes stored in the FIFO.
Table 35. FIFODataReg register (address 09h); reset value: XXh, XXXXXXXXb
7 6 5 4 3 2 1 0
FIFOData
Access
Rights
dy dy dy dy dy dy dy dy
Table 36. Description of FIFODataReg bits
Bit Symbol Description
7 to 0 FIFOData Data input and output port for the internal 64 byte FIFO-buffer. The
FIFO-buffer acts as parallel in/parallel out converter for all serial data
stream in- and outputs.
Table 37. FIFOLevelReg register (address 0Ah); reset value: 00h, 00000000b
7 6 5 4 3 2 1 0
FlushBuffer FIFOLevel
Access
Rights
w rrrrrrr
Table 38. Description of FIFOLevelReg bits
Bit Symbol Description
7 FlushBuffer Set to logic 1, this bit clears the internal FIFO-buffer’s read- and
write-pointer and the bit BufferOvfl in the register ErrReg immediately.
Reading this bit will always return 0.
6 to 0 FIFOLevel Indicates the number of bytes stored in the FIFO-buffer. Writing to the
FIFODataReg increments, reading decrements the FIFOLevel.PN512 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 4.5 — 17 December 2013
111345 33 of 136
NXP Semiconductors PN512
Full NFC Forum compliant solution
9.2.1.12 WaterLevelReg
Defines the level for FIFO under- and overflow warning.
9.2.1.13 ControlReg
Miscellaneous control bits.
Table 39. WaterLevelReg register (address 0Bh); reset value: 08h, 00001000b
7 6 5 4 3 2 1 0
0 0 WaterLevel
Access
Rights
RFU RFU r/w r/w r/w r/w r/w r/w
Table 40. Description of WaterLevelReg bits
Bit Symbol Description
7 to 6 - Reserved for future use.
5 to 0 WaterLevel This register defines a warning level to indicate a FIFO-buffer over- or
underflow:
The bit HiAlert in Status1Reg is set to logic 1, if the remaining number
of bytes in the FIFO-buffer space is equal or less than the defined
number of WaterLevel bytes.
The bit LoAlert in Status1Reg is set to logic 1, if equal or less than
WaterLevel bytes are in the FIFO.
Note: For the calculation of HiAlert and LoAlert see Table 31
Table 41. ControlReg register (address 0Ch); reset value: 00h, 00000000b
7 6 5 4 3 2 1 0
TStopNow TStartNow WrNFCIDtoFIFO Initiator 0 RxLastBits
Access
Rights
w w dy r/w RFU r r r
Table 42. Description of ControlReg bits
Bit Symbol Description
7 TStopNow Set to logic 1, the timer stops immediately.
Reading this bit will always return 0.
6 TStartNow Set to logic 1 starts the timer immediately.
Reading this bit will always return 0.
5 WrNFCIDtoFIFO Set to logic 1, the internal stored NFCID (10 bytes) is copied into the
FIFO.
Afterwards the bit is cleared automatically
4 Initiator Set to logic 1, the PN512 acts as initiator, otherwise it acts as target
3 - Reserved for future use.
2 to 0 RxLastBits Shows the number of valid bits in the last received byte. If zero, the
whole byte is valid.PN512 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 4.5 — 17 December 2013
111345 34 of 136
NXP Semiconductors PN512
Full NFC Forum compliant solution
9.2.1.14 BitFramingReg
Adjustments for bit oriented frames.
Table 43. BitFramingReg register (address 0Dh); reset value: 00h, 00000000b
7 6 5 4 3 2 1 0
StartSend RxAlign 0 TxLastBits
Access
Rights
w r/w r/w r/w RFU r/w r/w r/w
Table 44. Description of BitFramingReg bits
Bit Symbol Description
7 StartSend Set to logic 1, the transmission of data starts.
This bit is only valid in combination with the Transceive command.
6 to 4 RxAlign Used for reception of bit oriented frames: RxAlign defines the bit position
for the first bit received to be stored in the FIFO. Further received bits are
stored at the following bit positions.
Example:
RxAlign = 0: the LSB of the received bit is stored at bit 0, the second
received bit is stored at bit position 1.
RxAlign = 1: the LSB of the received bit is stored at bit 1, the second
received bit is stored at bit position 2.
RxAlign = 7: the LSB of the received bit is stored at bit 7, the second
received bit is stored in the following byte at bit position 0.
This bit shall only be used for bitwise anticollision at 106 kbit/s in Passive
Communication mode. In all other modes it shall be set to logic 0.
3 - Reserved for future use.
2 to 0 TxLastBits Used for transmission of bit oriented frames: TxLastBits defines the
number of bits of the last byte that shall be transmitted. A 000 indicates
that all bits of the last byte shall be transmitted.PN512 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 4.5 — 17 December 2013
111345 35 of 136
NXP Semiconductors PN512
Full NFC Forum compliant solution
9.2.1.15 CollReg
Defines the first bit collision detected on the RF interface.
Table 45. CollReg register (address 0Eh); reset value: XXh, 101XXXXXb
7 6 5 4 3 2 1 0
Values
AfterColl
0 CollPos
NotValid
CollPos
Access
Rights
r/w RFU r r r r r r
Table 46. Description of CollReg bits
Bit Symbol Description
7 ValuesAfterColl If this bit is set to logic 0, all receiving bits will be cleared after a
collision. This bit shall only be used during bitwise anticollision at
106 kbit, otherwise it shall be set to logic 1.
6 - Reserved for future use.
5 CollPosNotValid Set to logic 1, if no Collision is detected or the Position of the
Collision is out of the range of bits CollPos. This bit shall only be
interpreted in Passive Communication mode at 106 kbit or
ISO/IEC 14443A/MIFARE Reader/Writer mode.
4 to 0 CollPos These bits show the bit position of the first detected collision in a
received frame, only data bits are interpreted.
Example:
00h indicates a bit collision in the 32th bit
01h indicates a bit collision in the 1st bit
08h indicates a bit collision in the 8th bit
These bits shall only be interpreted in Passive Communication mode
at 106 kbit or ISO/IEC 14443A/MIFARE Reader/Writer mode if bit
CollPosNotValid is set to logic 0.PN512 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 4.5 — 17 December 2013
111345 36 of 136
NXP Semiconductors PN512
Full NFC Forum compliant solution
9.2.2 Page 1: Communication
9.2.2.1 PageReg
Selects the register page.
Table 47. PageReg register (address 10h); reset value: 00h, 00000000b
7 6 5 4 3 2 1 0
UsePage Select 0 0 0 0 0 PageSelect
Access
Rights
r/w RFU RFU RFU RFU RFU r/w r/w
Table 48. Description of PageReg bits
Bit Symbol Description
7 UsePage Select Set to logic 1, the value of PageSelect is used as register address A5
and A4. The LSB-bits of the register address are defined by the
address pins or the internal address latch, respectively.
Set to logic 0, the whole content of the internal address latch defines
the register address. The address pins are used as described in
Section 10.1 “Automatic microcontroller interface detection”.
6 to 2 - Reserved for future use.
1 to 0 PageSelect The value of PageSelect is used only, if UsePageSelect is set to
logic 1. In this case it specifies the register page (which is A5 and A4
of the register address).PN512 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 4.5 — 17 December 2013
111345 37 of 136
NXP Semiconductors PN512
Full NFC Forum compliant solution
9.2.2.2 ModeReg
Defines general mode settings for transmitting and receiving.
Table 49. ModeReg register (address 11h); reset value: 3Bh, 00111011b
7 6 5 4 3 2 1 0
MSBFirst Detect Sync TxWaitRF RxWaitRF PolSigin ModeDetOff CRCPreset
Access
Rights
r/w r/w r/w r/w r/w r/w r/w r/w
Table 50. Description of ModeReg bits
Bit Symbol Description
7 MSBFirst Set to logic 1, the CRC co-processor calculates the CRC with MSB
first and the CRCResultMSB and the CRCResultLSB in the
CRCResultReg register are bit reversed.
Note: During RF communication this bit is ignored.
6 Detect Sync If set to logic 1, the contactless UART waits for the value F0h before
the receiver is activated and F0h is added as a Sync-byte for
transmission.
This bit is only valid for 106 kbit during NFCIP-1 data exchange
protocol.
In all other modes it shall be set to logic 0.
5 TxWaitRF Set to logic 1 the transmitter in reader/writer or initiator mode for
NFCIP-1 can only be started, if an RF field is generated.
4 RxWaitRF Set to logic 1, the counter for RxWait starts only if an external RF field
is detected in Target mode for NFCIP-1 or in Card Communication
mode.
3 PolSigin PolSigin defines the polarity of the SIGIN pin. Set to logic 1, the
polarity of SIGIN pin is active high. Set to logic 0 the polarity of SIGIN
pin is active low.
Note: The internal envelope signal is coded active low.
Note: Changing this bit will generate a SiginActIRq event.
2 ModeDetOff Set to logic 1, the internal mode detector is switched off.
Note: The mode detector is only active during the AutoColl command.
1 to 0 CRCPreset Defines the preset value for the CRC co-processor for the command
CalCRC.
Note: During any communication, the preset values is selected
automatically according to the definition in the bits RxMode and
TxMode.
Value Description
00 0000
01 6363
10 A671
11 FFFFPN512 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 4.5 — 17 December 2013
111345 38 of 136
NXP Semiconductors PN512
Full NFC Forum compliant solution
9.2.2.3 TxModeReg
Defines the data rate and framing during transmission.
Table 51. TxModeReg register (address 12h); reset value: 00h, 00000000b
7 6 5 4 3 2 1 0
TxCRCEn TxSpeed InvMod TxMix TxFraming
Access
Rights
r/w dy dy dy r/w r/w dy dy
Table 52. Description of TxModeReg bits
Bit Symbol Description
7 TxCRCEn Set to logic 1, this bit enables the CRC generation during data
transmission.
Note: This bit shall only be set to logic 0 at 106 kbit.
6 to 4 TxSpeed Defines the bit rate while data transmission.
Value Description
000 106 kbit
001 212 kbit
010 424 kbit
011 848 kbit
100 1696 kbit
101 3392 kbit
110 Reserved
111 Reserved
Note: The bit coding for transfer speeds above 424 kbit is equivalent to
the bit coding of Active Communication mode 424 kbit (Ecma 340).
3 InvMod Set to logic 1, the modulation for transmitting data is inverted.
2 TxMix Set to logic 1, the signal at pin SIGIN is mixed with the internal coder
(see Section 12.6 “S2C interface support”).
1 to 0 TxFraming Defines the framing used for data transmission.
Value Description
00 ISO/IEC 14443A/MIFARE and Passive Communication mode
106 kbit
01 Active Communication mode
10 FeliCa and Passive communication mode 212 and 424 kbit
11 ISO/IEC 14443BPN512 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 4.5 — 17 December 2013
111345 39 of 136
NXP Semiconductors PN512
Full NFC Forum compliant solution
9.2.2.4 RxModeReg
Defines the data rate and framing during reception.
Table 53. RxModeReg register (address 13h); reset value: 00h, 00000000b
7 6 5 4 3 2 1 0
RxCRCEn RxSpeed RxNoErr RxMultiple RxFraming
Access
Rights
r/w dy dy dy r/w r/w dy dy
Table 54. Description of RxModeReg bits
Bit Symbol Description
7 RxCRCEn Set to logic 1, this bit enables the CRC calculation during reception.
Note: This bit shall only be set to logic 0 at 106 kbit.
6 to 4 RxSpeed Defines the bit rate while data transmission.
The PN512’s analog part handles only transfer speeds up to 424 kbit
internally, the digital UART handles the higher transfer speeds as well.
Value Description
000 106 kbit
001 212 kbit
010 424 kbit
011 848 kbit
100 1696 kbit
101 3392 kbit
110 Reserved
111 Reserved
Note: The bit coding for transfer speeds above 424 kbit is equivalent to
the bit coding of Active Communication mode 424 kbit (Ecma 340).
3 RxNoErr If set to logic 1 a not valid received data stream (less than 4 bits
received) will be ignored. The receiver will remain active.
For ISO/IEC14443B also RxSOFReq logic 1 is required to ignore a non
valid datastream.
2 RxMultiple Set to logic 0, the receiver is deactivated after receiving a data frame.
Set to logic 1, it is possible to receive more than one data frame. Having
set this bit, the receive and transceive commands will not terminate
automatically. In this case the multiple receiving can only be deactivated
by writing any command (except the Receive command) to the
CommandReg register or by clearing the bit by the host controller.
At the end of a received data stream an error byte is added to the FIFO.
The error byte is a copy of the ErrorReg register.
The behaviour for version 1.0 is described in Section 21 “Errata sheet”
on page 109.PN512 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 4.5 — 17 December 2013
111345 40 of 136
NXP Semiconductors PN512
Full NFC Forum compliant solution
9.2.2.5 TxControlReg
Controls the logical behavior of the antenna driver pins Tx1 and Tx2.
1 to 0 RxFraming Defines the expected framing for data reception.
Value Description
00 ISO/IEC 14443A/MIFARE and Passive Communication
mode 106 kbit
01 Active Communication mode
10 FeliCa and Passive Communication mode 212 and 424 kbit
11 ISO/IEC 14443B
Table 54. Description of RxModeReg bits
Bit Symbol Description
Table 55. TxControlReg register (address 14h); reset value: 80h, 10000000b
7 6 5 4 3 2 1 0
InvTx2RF
On
InvTx1RF
On
InvTx2RF
Off
InvTx1RF
Off
Tx2CW CheckRF Tx2RF
En
Tx1RF
En
Access
Rights
r/w r/w r/w r/w r/w w r/w r/w
Table 56. Description of TxControlReg bits
Bit Symbol Description
7 InvTx2RFOn Set to logic 1, the output signal at pin TX2 will be inverted, if driver TX2
is enabled.
6 InvTx1RFOn Set to logic 1, the output signal at pin TX1 will be inverted, if driver TX1
is enabled.
5 InvTx2RFOff Set to logic 1, the output signal at pin TX2 will be inverted, if driver TX2
is disabled.
4 InvTx1RFOff Set to logic 1, the output signal at pin TX1 will be inverted, if driver TX1
is disabled.
3 Tx2CW Set to logic 1, the output signal on pin TX2 will deliver continuously the
un-modulated 13.56 MHz energy carrier.
Set to logic 0, Tx2CW is enabled to modulate the 13.56 MHz energy
carrier.
2 CheckRF Set to logic 1, Tx2RFEn and Tx1RFEn can not be set if an external RF
field is detected. Only valid when using in combination with bit
Tx2RFEn or Tx1RFEn
1 Tx2RFEn Set to logic 1, the output signal on pin TX2 will deliver the 13.56 MHz
energy carrier modulated by the transmission data.
0 Tx1RFEn Set to logic 1, the output signal on pin TX1 will deliver the 13.56 MHz
energy carrier modulated by the transmission data.PN512 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 4.5 — 17 December 2013
111345 41 of 136
NXP Semiconductors PN512
Full NFC Forum compliant solution
9.2.2.6 TxAutoReg
Controls the settings of the antenna driver.
Table 57. TxAutoReg register (address 15h); reset value: 00h, 00000000b
7 6 5 4 3 2 1 0
AutoRF
OFF
Force100
ASK
Auto
WakeUp
0 CAOn InitialRF
On
Tx2RFAut
oEn
Tx1RFAuto
En
Access
Rights
r/w r/w r/w RFU r/w r/w r/w r/w
Table 58. Description of TxAutoReg bits
Bit Symbol Description
7 AutoRFOFF Set to logic 1, all active antenna drivers are switched off after the last
data bit has been transmitted as defined in the NFCIP-1.
6 Force100ASK Set to logic 1, Force100ASK forces a 100% ASK modulation
independent of the setting in register ModGsPReg.
5 AutoWakeUp Set to logic 1, the PN512 in soft Power-down mode will be started by
the RF level detector.
4 - Reserved for future use.
3 CAOn Set to logic 1, the collision avoidance is activated and internally the
value n is set in accordance to the NFCIP-1 Standard.
2 InitialRFOn Set to logic 1, the initial RF collision avoidance is performed and the bit
InitialRFOn is cleared automatically, if the RF is switched on.
Note: The driver, which should be switched on, has to be enabled by
bit Tx2RFAutoEn or bit Tx1RFAutoEn.
1 Tx2RFAutoEn Set to logic 1, the driver Tx2 is switched on after the external RF field
is switched off according to the time TADT. If the bits InitialRFOn and
Tx2RFAutoEn are set to logic 1, Tx2 is switched on if no external RF
field is detected during the time TIDT.
Note: The times TADT and TIDT are defined in the NFC IP-1 standard
(ISO/IEC 18092).
0 Tx1RFAutoEn Set to logic 1, the driver Tx1 is switched on after the external RF field
is switched off according to the time TADT. If the bit InitialRFOn and
Tx1RFAutoEn are set to logic 1, Tx1 is switched on if no external RF
field is detected during the time TIDT.
Note: The times TADT and TIDT are defined in the NFC IP-1 standard
(ISO/IEC 18092).PN512 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 4.5 — 17 December 2013
111345 42 of 136
NXP Semiconductors PN512
Full NFC Forum compliant solution
9.2.2.7 TxSelReg
Selects the sources for the analog part.
Table 59. TxSelReg register (address 16h); reset value: 10h, 00010000b
7 6 5 4 3 2 1 0
0 0 DriverSel SigOutSel
Access
Rights
RFU RFU r/w r/w r/w r/w r/w r/w
Table 60. Description of TxSelReg bits
Bit Symbol Description
7 to 6 - Reserved for future use.
5 to 4 DriverSel Selects the input of driver Tx1 and Tx2.
Value Description
00 Tristate
Note: In soft power down the drivers are only in Tristate mode
if DriverSel is set to Tristate mode.
01 Modulation signal (envelope) from the internal coder
10 Modulation signal (envelope) from SIGIN
11 HIGH
Note: The HIGH level depends on the setting of InvTx1RFOn/
InvTx1RFOff and InvTx2RFOn/InvTx2RFOff.PN512 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 4.5 — 17 December 2013
111345 43 of 136
NXP Semiconductors PN512
Full NFC Forum compliant solution
3 to 0 SigOutSel Selects the input for the SIGOUT Pin.
Value Description
0000 Tristate
0001 Low
0010 High
0011 TestBus signal as defined by bit TestBusBitSel in register
TestSel1Reg.
0100 Modulation signal (envelope) from the internal coder
0101 Serial data stream to be transmitted
0110 Output signal of the receiver circuit (card modulation signal
regenerated and delayed). This signal is used as data output
signal for SAM interface connection using 3 lines.
Note: To have a valid signal the PN512 has to be set to the
receiving mode by either the Transceive or Receive
command. The bit RxMultiple can be used to keep the PN512
in receiving mode.
Note: Do not use this setting in MIFARE mode. Manchester
coding as data collisions will not be transmitted on the
SIGOUT line.
0111 Serial data stream received.
Note: Do not use this setting in MIFARE mode. Miller coding
parameters as the bit length can vary.
1000-1011 FeliCa Sam modulation
1000 RX*
1001 TX
1010 Demodulator comparator output
1011 RFU
Note: * To have a valid signal the PN512 has to be set to the
receiving mode by either the Transceive or Receive
command. The bit RxMultiple can be used to keep the PN512
in receiving mode.
1100-1111 MIFARE Sam modulation
1100 RX* with RF carrier
1101 TX with RF carrier
1110 RX with RF carrier un-filtered
1111 RX envelope un-filtered
Note: *To have a valid signal the PN512 has to be set to the
receiving mode by either the Transceive or Receive
command. The bit RxMultiple can be used to keep the PN512
in receiving mode.
Table 60. Description of TxSelReg bits …continued
Bit Symbol DescriptionPN512 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 4.5 — 17 December 2013
111345 44 of 136
NXP Semiconductors PN512
Full NFC Forum compliant solution
9.2.2.8 RxSelReg
Selects internal receiver settings.
9.2.2.9 RxThresholdReg
Selects thresholds for the bit decoder.
Table 61. RxSelReg register (address 17h); reset value: 84h, 10000100b
7 6 5 4 3 2 1 0
UartSel RxWait
Access
Rights
r/w r/w r/w r/w r/w r/w r/w r/w
Table 62. Description of RxSelReg bits
Bit Symbol Description
7 to 6 UartSel Selects the input of the contactless UART
Value Description
00 Constant Low
01 Envelope signal at SIGIN
10 Modulation signal from the internal analog part
11 Modulation signal from SIGIN pin. Only valid for transfer
speeds above 424 kbit
5 to 0 RxWait After data transmission, the activation of the receiver is delayed for
RxWait bit-clocks. During this ‘frame guard time’ any signal at pin RX
is ignored. This parameter is ignored by the Receive command. All
other commands (e.g. Transceive, Autocoll, MFAuthent) use this
parameter. Depending on the mode of the PN512, the counter starts
different. In Passive Communication mode the counter starts with the
last modulation pulse of the transmitted data stream. In Active
Communication mode the counter starts immediately after the external
RF field is switched on.
Table 63. RxThresholdReg register (address 18h); reset value: 84h, 10000100b
7 6 5 4 3 2 1 0
MinLevel 0 CollLevel
Access
Rights
r/w r/w r/w r/w RFU r/w r/w r/w
Table 64. Description of RxThresholdReg bits
Bit Symbol Description
7 to 4 MinLevel Defines the minimum signal strength at the decoder input that shall be
accepted. If the signal strength is below this level, it is not evaluated.
3 - Reserved for future use.
2 to 0 CollLevel Defines the minimum signal strength at the decoder input that has to be
reached by the weaker half-bit of the Manchester-coded signal to
generate a bit-collision relatively to the amplitude of the stronger half-bit.PN512 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 4.5 — 17 December 2013
111345 45 of 136
NXP Semiconductors PN512
Full NFC Forum compliant solution
9.2.2.10 DemodReg
Defines demodulator settings.
Table 65. DemodReg register (address 19h); reset value: 4Dh, 01001101b
7 6 5 4 3 2 1 0
AddIQ FixIQ TPrescal
Even
TauRcv TauSync
Access
Rights
r/w r/w r/w r/w r/w r/w r/w r/w
Table 66. Description of DemodReg bits
Bit Symbol Description
7 to 6 AddIQ Defines the use of I and Q channel during reception
Note: FixIQ has to be set to logic 0 to
enable the following settings.
Value Description
00 Select the stronger channel
01 Select the stronger and freeze the selected during communication
10 combines the I and Q channel
11 Reserved
5 FixIQ If set to logic 1 and the bits of AddIQ are set to X0, the reception is fixed to
I channel.
If set to logic 1 and the bits of AddIQ are set to X1, the reception is fixed to
Q channel.
NOTE: If SIGIN/SIGOUT is used as S2C interface FixIQ set to 1 and AddIQ
set to X0 is rewired.
4 TPrescalE
ven
If set to logic 0 the following formula is used to calculate fTimer of the
prescaler:
fTimer = 13.56 MHz / (2 * TPreScaler + 1).
If set to logic 1 the following formula is used to calculate fTimer of the
prescaler:
fTimer = 13.56 MHz / (2 * TPreScaler + 2).
(Default TPrescalEven is logic 0)
The behaviour for the version 1.0 is described in Section 21 “Errata
sheet” on page 109.
3 to 2 TauRcv Changes the time constant of the internal during data reception.
Note: If set to 00, the PLL is frozen during data reception.
1 to 0 TauSync Changes the time constant of the internal PLL during burst.PN512 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 4.5 — 17 December 2013
111345 46 of 136
NXP Semiconductors PN512
Full NFC Forum compliant solution
9.2.2.11 FelNFC1Reg
Defines the length of the FeliCa Sync bytes and the minimum length of the received
packet.
Table 67. FelNFC1Reg register (address 1Ah); reset value: 00h, 00000000b
7 6 5 4 3 2 1 0
FelSyncLen DataLenMin
Access
Rights
r/w r/w r/w r/w r/w r/w r/w r/w
Table 68. Description of FelNFC1Reg bits
Bit Symbol Description
7 to 6 FelSyncLen Defines the length of the Sync bytes.
Value Sync- bytes in hex
00 B2 4D
01 00 B2 4D
10 00 00 B2 4D
11 00 00 00 B2 4D
5 to 0 DataLenMin These bits define the minimum length of the accepted packet length:
DataLenMin * 4 data packet length
This parameter is ignored at 106 kbit if the bit DetectSync in register
ModeReg is set to logic 0. If a received data packet is shorter than the
defined DataLenMin value, the data packet will be ignored.PN512 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 4.5 — 17 December 2013
111345 47 of 136
NXP Semiconductors PN512
Full NFC Forum compliant solution
9.2.2.12 FelNFC2Reg
Defines the maximum length of the received packet.
Table 69. FelNFC2Reg register (address1Bh); reset value: 00h, 00000000b
7 6 5 4 3 2 1 0
WaitForSelected ShortTimeSlot DataLenMax
Access
Rights
r/w r/w r/w r/w r/w r/w r/w r/w
Table 70. Description of FelNFC2Reg bits
Bit Symbol Description
7 WaitForSelected Set to logic 1, the AutoColl command is only terminated
automatically when:
1. A valid command has been received after performing a valid
Select procedure according ISO/IEC 14443A.
2. A valid command has been received after performing a valid
Polling procedure according to the FeliCa specification.
Note: If this bit is set, no active communication is possible.
Note: Setting this bit reduces the host controller interaction in case
of a communication to another device in the same RF field during
Passive Communication mode.
6 ShortTimeSlot Defines the time slot length for Passive Communication mode at
424 kbit. Set to logic 1 a short time slot is used (half of the timeslot
at 212 kbit). Set to logic 0 a long timeslot is used (equal to the
timeslot for 212 kbit).
5 to 0 DataLenMax These bits define the maximum length of the accepted packet
length: DataLenMax * 4 data packet length
Note: If set to logic 0 the maximum data length is 256 bytes.
This parameter is ignored at 106 kbit if the bit DetectSync in
register ModeReg is set to logic 0. If a received packet is larger
than the defined DataLenMax value, the packet will be ignored.PN512 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 4.5 — 17 December 2013
111345 48 of 136
NXP Semiconductors PN512
Full NFC Forum compliant solution
9.2.2.13 MifNFCReg
Defines ISO/IEC 14443A/MIFARE/NFC specific settings in target or Card Operating
mode.
Table 71. MifNFCReg register (address 1Ch); reset value: 62h, 01100010b
7 6 5 4 3 2 1 0
SensMiller TauMiller MFHalted TxWait
Access
Rights
r/w r/w r/w r/w r/w r/w r/w r/w
Table 72. Description of MifNFCReg bits
Bit Symbol Description
7 to 5 SensMiller These bits define the sensitivity of the Miller decoder.
4 to 3 TauMiller These bits define the time constant of the Miller decoder.
2 MFHalted Set to logic 1, this bit indicates that the PN512 is set to HALT mode in
Card Operation mode at 106 kbit. This bit is either set by the host
controller or by the internal state machine and indicates that only the
code 52h is accepted as a request command. This bit is cleared
automatically by a RF reset.
1 to 0 TxWait These bits define the minimum response time between receive and
transmit in number of data bits + 7 data bits.
The shortest possible minimum response time is 7 data bits.
(TxWait=0). The minimum response time can be increased by the
number of bits defined in TxWait. The longest minimum response time
is 10 data bits (TxWait = 3).
If a transmission of a frame is started before the minimum response
time is over, the PN512 waits before transmitting the data until the
minimum response time is over.
If a transmission of a frame is started after the minimum response time
is over, the frame is started immediately if the data bit synchronization
is correct. (adjustable with TxBitPhase).PN512 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 4.5 — 17 December 2013
111345 49 of 136
NXP Semiconductors PN512
Full NFC Forum compliant solution
9.2.2.14 ManualRCVReg
Allows manual fine tuning of the internal receiver.
Remark: For standard applications it is not recommended to change this register settings.
Table 73. ManualRCVReg register (address 1Dh); reset value: 00h, 00000000b
7 6 5 4 3 2 1 0
0 FastFilt
MF_SO
Delay
MF_SO
Parity
Disable
LargeBW
PLL
Manual
HPCF
HPFC
Access
Rights
RFU r/w r/w r/w r/w r/w r/w r/w
Table 74. Description of ManualRCVReg bits
Bit Symbol Description
7 - Reserved for future use.
6 FastFilt
MF_SO
If this bit is set to logic 1, the internal filter for the Miller-Delay Circuit is
set to Fast mode.
Note: This bit should only set to logic 1, if Millerpulses of less than
400 ns Pulse length are expected. At 106 kBaud the typical value is
3 us.
5 Delay MF_SO If this bit is set to logic 1, the Signal at SIGOUT-pin is delayed, so that
in SAM mode the Signal at SIGIN must be 128/fc faster compared to
the ISO/IEC 14443A, to reach the ISO/IEC 14443A restrictions on the
RF-Field.
Note: This delay shall only be activated for setting bits SigOutSel to
(1110b) or (1111b) in register TxSelReg.
4 Parity Disable If this bit is set to logic 1, the generation of the Parity bit for
transmission and the Parity-Check for receiving is switched off. The
received Parity bit is handled like a data bit.
3 LargeBWPLL Set to logic 1, the bandwidth of the internal PLL used for clock
recovery is extended.
2 ManualHPCF Set to logic 0, the HPCF bits are ignored and the HPCF settings are
adapted automatically to the receiving mode. Set to logic 1, values of
HPCF are valid.
1 to 0 HPFC Selects the High Pass Corner Frequency (HPCF) of the filter in the
internal receiver chain
00 For signals with frequency spectrum down to 106 kHz.
01 For signals with frequency spectrum down to 212 kHz.
10 For signals with frequency spectrum down to 424 kHz.
11 For signals with frequency spectrum down to 848 kHzPN512 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 4.5 — 17 December 2013
111345 50 of 136
NXP Semiconductors PN512
Full NFC Forum compliant solution
9.2.2.15 TypeBReg
9.2.2.16 SerialSpeedReg
Selects the speed of the serial UART interface.
Table 75. TypeBReg register (address 1Eh); reset value: 00h, 00000000b
7 6 5 4 3 2 1 0
RxSOF
Req
RxEOF
Req
0 EOFSO
FWidth
NoTxSOF NoTxEOF TxEGT
Access
Rights
r/w r/w RFU r/w r/w r/w r/w r/w
Table 76. Description of TypeBReg bits
Bit Symbol Description
7 RxSOFReq If this bit is set to logic 1, the SOF is required. A datastream starting
without SOF is ignored.
If this bit is cleared, a datastream with and without SOF is accepted.
The SOF will be removed and not written into the FIFO.
6 RxEOFReq If this bit is set to logic 1, the EOF is required. A datastream ending
without EOF will generate a Protocol-Error. If this bit is cleared, a
datastream with and without EOF is accepted. The EOF will be
removed and not written into the FIFO.
For the behaviour in version 1.0, see Section 21 “Errata sheet” on
page 109.
5 - Reserved for future use.
4 EOFSOFWidth If this bit is set to logic 1 and EOFSOFAdjust bit is logic 0, the SOF
and EOF will have the maximum length defined in ISO/IEC 14443B.
If this bit is cleared and EOFSOFAdjust bit is logic 0, the SOF and
EOF will have the minimum length defined in ISO/IEC 14443B.
If this bit is set to 1 and the EOFSOFadjust bit is logic 1 will result in
SOF low = (11etu 8 cycles)/fc
SOF high = (2 etu + 8 cycles)/fc
EOF low = (11 etu 8 cycles)/fc
If this bit is set to 0 and the EOFSOFAdjust bit is logic 1 will result in
an incorrect system behavior in respect to ISO specification.
For the behaviour in version 1.0, see Section 21 “Errata sheet” on
page 109.
3 NoTxSOF If this bit is set to logic 1, the generation of the SOF is suppressed.
2 NoTxEOF If this bit is set to logic 1, the generation of the EOF is suppressed.
1 to 0 TxEGT These bits define the length of the EGT.
Value Description
00 0 bit
01 1 bit
10 2 bits
11 3 bitsPN512 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 4.5 — 17 December 2013
111345 51 of 136
NXP Semiconductors PN512
Full NFC Forum compliant solution
Table 77. SerialSpeedReg register (address 1Fh); reset value: EBh, 11101011b
7 6 5 4 3 2 1 0
BR_T0 BR_T1
Access
Rights
r/w r/w r/w r/w r/w r/w r/w r/w
Table 78. Description of SerialSpeedReg bits
Bit Symbol Description
7 to 5 BR_T0 Factor BR_T0 to adjust the transfer speed, for description see Section
10.3.2 “Selectable UART transfer speeds”.
3 to 0 BR_T1 Factor BR_T1 to adjust the transfer speed, for description see Section
10.3.2 “Selectable UART transfer speeds”.PN512 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 4.5 — 17 December 2013
111345 52 of 136
NXP Semiconductors PN512
Full NFC Forum compliant solution
9.2.3 Page 2: Configuration
9.2.3.1 PageReg
Selects the register page.
9.2.3.2 CRCResultReg
Shows the actual MSB and LSB values of the CRC calculation.
Note: The CRC is split into two 8-bit register.
Note: Setting the bit MSBFirst in ModeReg register reverses the bit order, the byte order is
not changed.
Table 79. PageReg register (address 20h); reset value: 00h, 00000000b
7 6 5 4 3 2 1 0
UsePageSelect 0 0 0 0 0 PageSelect
Access Rights r/w RFU RFU RFU RFU RFU r/w r/w
Table 80. Description of PageReg bits
Bit Symbol Description
7 UsePageSelect Set to logic 1, the value of PageSelect is used as register address A5
and A4. The LSB-bits of the register address are defined by the
address pins or the internal address latch, respectively.
Set to logic 0, the whole content of the internal address latch defines
the register address. The address pins are used as described in
Section 10.1 “Automatic microcontroller interface detection”.
6 to 2 - Reserved for future use.
1 to 0 PageSelect The value of PageSelect is used only if UsePageSelect is set to
logic 1. In this case, it specifies the register page (which is A5 and
A4of the register address).
Table 81. CRCResultReg register (address 21h); reset value: FFh, 11111111b
7 6 5 4 3 2 1 0
CRCResultMSB
Access Rights r r r r r r r r
Table 82. Description of CRCResultReg bits
Bit Symbol Description
7 to 0 CRCResultMSB This register shows the actual value of the most significant byte of
the CRCResultReg register. It is valid only if bit CRCReady in
register Status1Reg is set to logic 1.
Table 83. CRCResultReg register (address 22h); reset value: FFh, 11111111b
7 6 5 4 3 2 1 0
CRCResultLSB
Access Rights r r r r r r r r
Table 84. Description of CRCResultReg bits
Bit Symbol Description
7 to 0 CRCResultLSB This register shows the actual value of the least significant byte of
the CRCResult register. It is valid only if bit CRCReady in register
Status1Reg is set to logic 1.PN512 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 4.5 — 17 December 2013
111345 53 of 136
NXP Semiconductors PN512
Full NFC Forum compliant solution
9.2.3.3 GsNOffReg
Selects the conductance for the N-driver of the antenna driver pins TX1 and TX2 when the
driver is switched off.
Table 85. GsNOffReg register (address 23h); reset value: 88h, 10001000b
7 6 5 4 3 2 1 0
CWGsNOff ModGsNOff
Access
Rights
r/w r/w r/w r/w r/w r/w r/w r/w
Table 86. Description of GsNOffReg bits
Bit Symbol Description
7 to 4 CWGsNOff The value of this register defines the conductance of the output
N-driver during times of no modulation.
Note: The conductance value is binary weighted.
Note: During soft Power-down mode the highest bit is forced to 1.
Note: The value of the register is only used if the driver is switched
off. Otherwise the bit value CWGsNOn of register GsNOnReg is
used.
Note: This value is used for LoadModulation.
3 to 0 ModGsNOff The value of this register defines the conductance of the output
N-driver for the time of modulation. This may be used to regulate the
modulation index.
Note: The conductance value is binary weighted.
Note: During soft Power-down mode the highest bit is forced to 1.
Note: The value of the register is only used if the driver is switched
off. Otherwise the bit value ModGsNOn of register GsNOnReg is
used
Note: This value is used for LoadModulation.PN512 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 4.5 — 17 December 2013
111345 54 of 136
NXP Semiconductors PN512
Full NFC Forum compliant solution
9.2.3.4 ModWidthReg
Controls the modulation width settings.
9.2.3.5 TxBitPhaseReg
Adjust the bitphase at 106 kbit during transmission.
Table 87. ModWidthReg register (address 24h); reset value: 26h, 00100110b
7 6 5 4 3 2 1 0
ModWidth
Access
Rights
r/w r/w r/w r/w r/w r/w r/w r/w
Table 88. Description of ModWidthReg bits
Bit Symbol Description
7 to 0 ModWidth These bits define the width of the Miller modulation as initiator in Active
and Passive Communication mode as multiples of the carrier
frequency (ModWidth + 1/fc). The maximum value is half the bit
period.
Acting as a target in Passive Communication mode at 106 kbit or in
Card Operating mode for ISO/IEC 14443A/MIFARE these bits are
used to change the duty cycle of the subcarrier frequency.
The resulting number of carrier periods are calculated according to the
following formulas:
LOW value: #clocksLOW = (ModWidth modulo 8) + 1.
HIGH value: #clocksHIGH = 16-#clocksLOW.
Table 89. TxBitPhaseReg register (address 25h); reset value: 87h, 10000111b
7 6 5 4 3 2 1 0
RcvClkChange TxBitPhase
Access
Rights
r/w r/w r/w r/w r/w r/w r/w r/w
Table 90. Description of TxBitPhaseReg bits
Bit Symbol Description
7 RcvClkChange Set to logic 1, the demodulator’s clock is derived by the external RF
field.
6 to 0 TxBitPhase These bits are representing the number of carrier frequency clock
cycles, which are added to the waiting period before transmitting
data in all communication modes. TXBitPhase is used to adjust the
TX bit synchronization during passive NFCIP-1 communication mode
at 106 kbit and in ISO/IEC 14443A/MIFARE card mode.PN512 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 4.5 — 17 December 2013
111345 55 of 136
NXP Semiconductors PN512
Full NFC Forum compliant solution
9.2.3.6 RFCfgReg
Configures the receiver gain and RF level detector sensitivity.
Table 91. RFCfgReg register (address 26h); reset value: 48h, 01001000b
7 6 5 4 3 2 1 0
RFLevelAmp RxGain RFLevel
Access
Rights
r/w r/w r/w r/w r/w r/w r/w r/w
Table 92. Description of RFCfgReg bits
Bit Symbol Description
7 RFLevelAmp Set to logic 1, this bit activates the RF level detectors’ amplifier.
6 to 4 RxGain This register defines the receivers signal voltage gain factor:
Value Description
000 18 dB
001 23 dB
010 18 dB
011 23 dB
100 33 dB
101 38 dB
110 43 dB
111 48 dB
3 to 0 RFLevel Defines the sensitivity of the RF level detector, for description see
Section 12.3 “RF level detector”.PN512 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 4.5 — 17 December 2013
111345 56 of 136
NXP Semiconductors PN512
Full NFC Forum compliant solution
9.2.3.7 GsNOnReg
Selects the conductance for the N-driver of the antenna driver pins TX1 and TX2 when the
driver is switched on.
9.2.3.8 CWGsPReg
Defines the conductance of the P-driver during times of no modulation
Table 93. GsNOnReg register (address 27h); reset value: 88h, 10001000b
7 6 5 4 3 2 1 0
CWGsNOn ModGsNOn
Access
Rights
r/w r/w r/w r/w r/w r/w r/w r/w
Table 94. Description of GsNOnReg bits
Bit Symbol Description
7 to 4 CWGsNOn The value of this register defines the conductance of the output
N-driver during times of no modulation. This may be used to regulate
the output power and subsequently current consumption and
operating distance.
Note: The conductance value is binary weighted.
Note: During soft Power-down mode the highest bit is forced to 1.
Note: This value is only used if the driver TX1 or TX2 are switched on.
Otherwise the value of the bits CWGsNOff of register GsNOffReg is
used.
3 to 0 ModGsNOn The value of this register defines the conductance of the output
N-driver for the time of modulation. This may be used to regulate the
modulation index.
Note: The conductance value is binary weighted.
Note: During soft Power-down mode the highest bit is forced to 1.
Note: This value is only used if the driver TX1 or Tx2 are switched on.
Otherwise the value of the bits ModsNOff of register GsNOffReg is
used.
Table 95. CWGsPReg register (address 28h); reset value: 20h, 00100000b
7 6 5 4 3 2 1 0
0 0 CWGsP
Access
Rights
RFU RFU r/w r/w r/w r/w r/w r/w
Table 96. Description of CWGsPReg bits
Bit Symbol Description
7 to 6 - Reserved for future use.
5 to 0 CWGsP The value of this register defines the conductance of the output
P-driver. This may be used to regulate the output power and
subsequently current consumption and operating distance.
Note: The conductance value is binary weighted.
Note: During soft Power-down mode the highest bit is forced to 1.PN512 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 4.5 — 17 December 2013
111345 57 of 136
NXP Semiconductors PN512
Full NFC Forum compliant solution
9.2.3.9 ModGsPReg
Defines the driver P-output conductance during modulation.
[1] If Force100ASK is set to logic 1, the value of ModGsP has no effect.
9.2.3.10 TMode Register, TPrescaler Register
Defines settings for the timer.
Note: The Prescaler value is split into two 8-bit registers
Table 97. ModGsPReg register (address 29h); reset value: 20h, 00100000b
7 6 5 4 3 2 1 0
0 0 ModGsP
Access
Rights
RFU RFU r/w r/w r/w r/w r/w r/w
Table 98. Description of ModGsPReg bits
Bit Symbol Description
7 to 6 - Reserved for future use.
5 to 0 ModGsP[1] The value of this register defines the conductance of the output
P-driver for the time of modulation. This may be used to regulate the
modulation index.
Note: The conductance value is binary weighted.
Note: During soft Power-down mode the highest bit is forced to 1.
Table 99. TModeReg register (address 2Ah); reset value: 00h, 00000000b
7 6 5 4 3 2 1 0
TAuto TGated TAutoRestart TPrescaler_Hi
Access
Rights
r/w r/w r/w r/w r/w r/w r/w r/w
Table 100. Description of TModeReg bits
Bit Symbol Description
7 TAuto Set to logic 1, the timer starts automatically at the end of the transmission
in all communication modes at all speeds or when bit InitialRFOn is set to
logic 1 and the RF field is switched on.
In mode MIFARE and ISO14443-B 106kbit/s the timer stops after the 5th
bit (1 startbit, 4 databits) if the bit RxMultiple in the register RxModeReg is
not set. In all other modes, the timer stops after the 4th bit if the bit
RxMultiple the register RxModeReg is not set.
If RxMultiple is set to logic 1, the timer never stops. In this case the timer
can be stopped by setting the bit TStopNow in register ControlReg to 1.
Set to logic 0 indicates, that the timer is not influenced by the protocol.PN512 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 4.5 — 17 December 2013
111345 58 of 136
NXP Semiconductors PN512
Full NFC Forum compliant solution
6 to 5 TGated The internal timer is running in gated mode.
Note: In the gated mode, the bit TRunning is 1 when the timer is enabled
by the register bits. This bit does not influence the gating signal.
Value Description
00 Non gated mode
01 Gated by SIGIN
10 Gated by AUX1
11 Gated by A3
4 TAutoRestart Set to logic 1, the timer automatically restart its count-down from
TReloadValue, instead of counting down to zero.
Set to logic 0 the timer decrements to ZERO and the bit TimerIRq is set
to logic 1.
3 to 0 TPrescaler_Hi Defines higher 4 bits for TPrescaler.
The following formula is used to calculate fTimer if TPrescalEven bit in
Demot Reg is set to logic 0:
fTimer = 13.56 MHz/(2*TPreScaler+1).
Where TPreScaler = [TPrescaler_Hi:TPrescaler_Lo] (TPrescaler value
on 12 bits) (Default TPrescalEven is logic 0)
The following formula is used to calculate fTimer if TPrescalEven bit in
Demot Reg is set to logic 1:
fTimer = 13.56 MHz/(2*TPreScaler+2).
For detailed description see Section 15 “Timer unit”. For the behaviour
within version 1.0, see Section 21 “Errata sheet” on page 109.
Table 101. TPrescalerReg register (address 2Bh); reset value: 00h, 00000000b
7 6 5 4 3 2 1 0
TPrescaler_Lo
Access
Rights
r/w r/w r/w r/w r/w r/w r/w r/w
Table 102. Description of TPrescalerReg bits
Bit Symbol Description
7 to 0 TPrescaler_Lo Defines lower 8 bits for TPrescaler.
The following formula is used to calculate fTimer if TPrescalEven bit in
Demot Reg is set to logic 0:
fTimer = 13.56 MHz/(2*TPreScaler+1).
Where TPreScaler = [TPrescaler_Hi:TPrescaler_Lo] (TPrescaler value
on 12 bits)
The following formula is used to calculate fTimer if TPrescalEven bit in
Demot Reg is set to logic 1:
fTimer = 13.56 MHz/(2*TPreScaler+2).
Where TPreScaler = [TPrescaler_Hi:TPrescaler_Lo] (TPrescaler value
on 12 bits)
For detailed description see Section 15 “Timer unit”.
Table 100. Description of TModeReg bits …continued
Bit Symbol DescriptionPN512 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 4.5 — 17 December 2013
111345 59 of 136
NXP Semiconductors PN512
Full NFC Forum compliant solution
9.2.3.11 TReloadReg
Describes the 16-bit long timer reload value.
Note: The Reload value is split into two 8-bit registers.
Table 103. TReloadReg (Higher bits) register (address 2Ch); reset value: 00h, 00000000b
7 6 5 4 3 2 1 0
TReloadVal_Hi
Access
Rights
r/w r/w r/w r/w r/w r/w r/w r/w
Table 104. Description of the higher TReloadReg bits
Bit Symbol Description
7 to 0 TReloadVal_Hi Defines the higher 8 bits for the TReloadReg.
With a start event the timer loads the TReloadVal. Changing this
register affects the timer only at the next start event.
Table 105. TReloadReg (Lower bits) register (address 2Dh); reset value: 00h, 00000000b
7 6 5 4 3 2 1 0
TReloadVal_Lo
Access
Rights
r/w r/w r/w r/w r/w r/w r/w r/w
Table 106. Description of lower TReloadReg bits
Bit Symbol Description
7 to 0 TReloadVal_Lo Defines the lower 8 bits for the TReloadReg.
With a start event the timer loads the TReloadVal. Changing this
register affects the timer only at the next start event. PN512 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 4.5 — 17 December 2013
111345 60 of 136
NXP Semiconductors PN512
Full NFC Forum compliant solution
9.2.3.12 TCounterValReg
Contains the current value of the timer.
Note: The Counter value is split into two 8-bit register.
9.2.4 Page 3: Test
9.2.4.1 PageReg
Selects the register page.
Table 107. TCounterValReg (Higher bits) register (address 2Eh); reset value: XXh,
XXXXXXXXb
7 6 5 4 3 2 1 0
TCounterVal_Hi
Access
Rights
rrrrrrrr
Table 108. Description of the higher TCounterValReg bits
Bit Symbol Description
7 to 0 TCounterVal_Hi Current value of the timer, higher 8 bits.
Table 109. TCounterValReg (Lower bits) register (address 2Fh); reset value: XXh,
XXXXXXXXb
7 6 5 4 3 2 1 0
TCounterVal_Lo
Access
Rights
rrrrrrrr
Table 110. Description of lower TCounterValReg bits
Bit Symbol Description
7 to 0 TCounterVal_Lo Current value of the timer, lower 8 bits.
Table 111. PageReg register (address 30h); reset value: 00h, 00000000b
7 6 5 4 3 2 1 0
UsePageSelect 0 0 0 0 0 PageSelect
Access
Rights
r/w RFU RFU RFU RFU RFU r/w r/wPN512 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 4.5 — 17 December 2013
111345 61 of 136
NXP Semiconductors PN512
Full NFC Forum compliant solution
Table 112. Description of PageReg bits
Bit Symbol Description
7 UsePageSelect Set to logic 1, the value of PageSelect is used as register address
A5 and A4. The LSB-bits of the register address are defined by the
address pins or the internal address latch, respectively.
Set to logic 0, the whole content of the internal address latch defines
the register address. The address pins are used as described in
Section 10.1 “Automatic microcontroller interface detection”.
6 to 2 - Reserved for future use.
1 to 0 PageSelect The value of PageSelect is used only if UsePageSelect is set to
logic 1. In this case, it specifies the register page (which is A5 and
A4 of the register address).PN512 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 4.5 — 17 December 2013
111345 62 of 136
NXP Semiconductors PN512
Full NFC Forum compliant solution
9.2.4.2 TestSel1Reg
General test signal configuration.
9.2.4.3 TestSel2Reg
General test signal configuration and PRBS control
Table 113. TestSel1Reg register (address 31h); reset value: 00h, 00000000b
7 6 5 4 3 2 1 0
- - SAMClockSel SAMClkD1 TstBusBitSel
Access
Rights
r/w r/w r/w r/w r/w r/w r/w r/w
Table 114. Description of TestSel1Reg bits
Bit Symbol Description
7 to 6 - Reserved for future use.
5 to 4 SAMClockSel Defines the source for the 13.56 MHz SAM clock
Value Description
00 GND- Sam Clock switched off
01 clock derived by the internal oscillator
10 internal UART clock
11 clock derived by the RF field
3 SAMClkD1 Set to logic 1, the SAM clock is delivered to D1.
Note: Only possible if the 8bit parallel interface is not used.
2 to 0 TstBusBitSel Select the TestBus bit from the testbus to be propagated to SIGOUT.
Table 115. TestSel2Reg register (address 32h); reset value: 00h, 00000000b
7 6 5 4 3 2 1 0
TstBusFlip PRBS9 PRBS15 TestBusSel
Access
Rights
r/w r/w r/w r/w r/w r/w r/w r/w
Table 116. Description of TestSel2Reg bits
Bit Symbol Description
7 TstBusFlip If set to logic 1, the testbus is mapped to the parallel port by the
following order:
D4, D3, D2, D6, D5, D0, D1. See Section 20 “Testsignals”.
6 PRBS9 Starts and enables the PRBS9 sequence according ITU-TO150.
Note: All relevant registers to transmit data have to be configured
before entering PRBS9 mode.
Note: The data transmission of the defined sequence is started by the
send command.
5 PRBS15 Starts and enables the PRBS15 sequence according ITU-TO150.
Note: All relevant registers to transmit data have to be configured
before entering PRBS15 mode.
Note: The data transmission of the defined sequence is started by the
send command.
4 to 0 TestBusSel Selects the testbus. See Section 20 “Testsignals”PN512 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 4.5 — 17 December 2013
111345 63 of 136
NXP Semiconductors PN512
Full NFC Forum compliant solution
9.2.4.4 TestPinEnReg
Enables the pin output driver on the 8-bit parallel bus.
9.2.4.5 TestPinValueReg
Defines the values for the 7-bit parallel port when it is used as I/O.
Table 117. TestPinEnReg register (address 33h); reset value: 80h, 10000000b
7 6 5 4 3 2 1 0
RS232LineEn TestPinEn
Access
Rights
r/w r/w r/w r/w r/w r/w r/w r/w
Table 118. Description of TestPinEnReg bits
Bit Symbol Description
7 RS232LineEn Set to logic 0, the lines MX and DTRQ for the serial UART are
disabled.
6 to 0 TestPinEn Enables the pin output driver on the 8-bit parallel interface.
Example:
Setting bit 0 to 1 enables D0
Setting bit 5 to 1 enables D5
Note: Only valid if one of serial interfaces is used.
If the SPI interface is used only D0 to D4 can be used. If the serial
UART interface is used and RS232LineEn is set to logic 1 only D0 to
D4 can be used.
Table 119. TestPinValueReg register (address 34h); reset value: 00h, 00000000b
7 6 5 4 3 2 1 0
UseIO TestPinValue
Access
Rights
r/w r/w r/w r/w r/w r/w r/w r/w
Table 120. Description of TestPinValueReg bits
Bit Symbol Description
7 UseIO Set to logic 1, this bit enables the I/O functionality for the 7-bit parallel
port in case one of the serial interfaces is used. The input/output
behavior is defined by TestPinEn in register TestPinEnReg. The value
for the output behavior is defined in the bits TestPinVal.
Note: If SAMClkD1 is set to logic 1, D1 can not be used as I/O.
6 to 0 TestPinValue Defines the value of the 7-bit parallel port, when it is used as I/O. Each
output has to be enabled by the TestPinEn bits in register
TestPinEnReg.
Note: Reading the register indicates the actual status of the pins D6 -
D0 if UseIO is set to logic 1. If UseIO is set to logic 0, the value of the
register TestPinValueReg is read back. PN512 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 4.5 — 17 December 2013
111345 64 of 136
NXP Semiconductors PN512
Full NFC Forum compliant solution
9.2.4.6 TestBusReg
Shows the status of the internal testbus.
9.2.4.7 AutoTestReg
Controls the digital selftest.
9.2.4.8 VersionReg
Shows the version.
Table 121. TestBusReg register (address 35h); reset value: XXh, XXXXXXXXb
7 6 5 4 3 2 1 0
TestBus
Access Rights r r r r r r r r
Table 122. Description of TestBusReg bits
Bit Symbol Description
7 to 0 TestBus Shows the status of the internal testbus. The testbus is selected by the
register TestSel2Reg. See Section 20 “Testsignals”.
Table 123. AutoTestReg register (address 36h); reset value: 40h, 01000000b
7 6 5 4 3 2 1 0
0 AmpRcv EOFSO
FAdjust
- SelfTest
Access Rights RFT r/w RFU RFU r/w r/w r/w r/w
Table 124. Description of bits
Bit Symbol Description
7 - Reserved for production tests.
6 AmpRcv If set to logic 1, the internal signal processing in the receiver chain is
performed non-linear. This increases the operating distance in
communication modes at 106 kbit.
Note: Due to the non linearity the effect of the bits MinLevel and
CollLevel in the register RxThreshholdReg are as well non linear.
5 EOFSOFAdjust If set to logic 0 and the EOFSOFwidth is set to 1 will result in the
Maximum length of SOF and EOF according to ISO/IEC14443B
If set to logic 0 and the EOFSOFwidth is set to 0 will result in the
Minimum length of SOF and EOF according to ISO/IEC14443B
If this bit is set to 1 and the EOFSOFwidth bit is logic 1 will result in
SOF low = (11 etu 8 cycles)/fc
SOF high = (2 etu + 8 cycles)/fc
EOF low = (11 etu 8 cycles)/fc
For the behaviour in version 1.0, see Section 21 “Errata sheet” on
page 109.
4 - Reserved for future use.
3 to 0 SelfTest Enables the digital self test. The selftest can be started by the selftest
command in the command register. The selftest is enabled by 1001.
Note: For default operation the selftest has to be disabled by 0000.PN512 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 4.5 — 17 December 2013
111345 65 of 136
NXP Semiconductors PN512
Full NFC Forum compliant solution
Table 125. VersionReg register (address 37h); reset value: XXh, XXXXXXXXb
7 6 5 4 3 2 1 0
Version
Access Rights r r r r r r r r
Table 126. Description of VersionReg bits
Bit Symbol Description
7 to 0 Version 80h indicates PN512 version 1.0, differences to version 2.0 are
described within Section 21 “Errata sheet” on page 109.
82h indicates PN512 version 2.0, which covers also the industrial
version.PN512 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 4.5 — 17 December 2013
111345 66 of 136
NXP Semiconductors PN512
Full NFC Forum compliant solution
9.2.4.9 AnalogTestReg
Controls the pins AUX1 and AUX2
Table 127. AnalogTestReg register (address 38h); reset value: 00h, 00000000b
7 6 5 4 3 2 1 0
AnalogSelAux1 AnalogSelAux2
Access Rights r/w r/w r/w r/w r/w r/w r/w r/w
Table 128. Description of AnalogTestReg bits
Bit Symbol Description
7 to 4
3 to 0
AnalogSelAux1
AnalogSelAux2
Controls the AUX pin.
Note: All test signals are described in Section 20 “Testsignals”.
Value Description
0000 Tristate
0001 Output of TestDAC1 (AUX1), output of TESTDAC2 (AUX2)
Note: Current output. The use of 1 k pull-down resistor on AUX is recommended.
0010 Testsignal Corr1
Note: Current output. The use of 1 k pull-down resistor on AUX is recommended.
0011 Testsignal Corr2
Note: Current output. The use of 1 k pull-down resistor on AUX is recommended.
0100 Testsignal MinLevel
Note: Current output. The use of 1 k pull-down resistor on AUX is recommended.
0101 Testsignal ADC channel I
Note: Current output. The use of 1 k pull-down resistor on AUX is recommended.
0110 Testsignal ADC channel Q
Note: Current output. The use of 1 k pull-down resistor on AUX is recommended.
0111 Testsignal ADC channel I combined with Q
Note: Current output. The use of 1 k pull-down resistor on AUX is recommended.
1000 Testsignal for production test
Note: Current output. The use of 1 k pull-down resistor on AUX is recommended.
1001 SAM clock (13.56 MHz)
1010 HIGH
1011 LOW
1100 TxActive
At 106 kbit: HIGH during Startbit, Data bit, Parity and CRC. At 212 and 424 kbit: High
during Preamble, Sync, Data and CRC.
1101 RxActive
At 106 kbit: High during databit, Parity and CRC.
At 212 and 424 kbit: High during data and CRC.
1110 Subcarrier detected
106 kbit: not applicable
212 and 424 kbit: High during last part of Preamble, Sync data and CRC
1111 TestBus-Bit as defined by the TstBusBitSel in register TestSel1Reg.PN512 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 4.5 — 17 December 2013
111345 67 of 136
NXP Semiconductors PN512
Full NFC Forum compliant solution
9.2.4.10 TestDAC1Reg
Defines the testvalues for TestDAC1.
9.2.4.11 TestDAC2Reg
Defines the testvalue for TestDAC2.
9.2.4.12 TestADCReg
Shows the actual value of ADC I and Q channel.
Table 129. TestDAC1Reg register (address 39h); reset value: XXh, 00XXXXXXb
7 6 5 4 3 2 1 0
0 0 TestDAC1
Access
Rights
RFT RFU r/w r/w r/w r/w r/w r/w
Table 130. Description of TestDAC1Reg bits
Bit Symbol Description
7 - Reserved for production tests.
6 - Reserved for future use.
5 to 0 TestDAC1 Defines the testvalue for TestDAC1. The output of the DAC1 can be
switched to AUX1 by setting AnalogSelAux1 to 0001 in register
AnalogTestReg.
Table 131. TestDAC2Reg register (address 3Ah); reset value: XXh, 00XXXXXXb
7 6 5 4 3 2 1 0
0 0 TestDAC2
Access
Rights
RFU RFU r/w r/w r/w r/w r/w r/w
Table 132. Description ofTestDAC2Reg bits
Bit Symbol Description
7 to 6 - Reserved for future use.
5 to 0 TestDAC2 Defines the testvalue for TestDAC2. The output of the DAC2 can be
switched to AUX2 by setting AnalogSelAux2 to 0001 in register
AnalogTestReg.
Table 133. TestADCReg register (address 3Bh); reset value: XXh, XXXXXXXXb
7 6 5 4 3 2 1 0
ADC_I ADC_Q
Access
Rights
Table 134. Description of TestADCReg bits
Bit Symbol Description
7 to 4 ADC_I Shows the actual value of ADC I channel.
3 to 0 ADC_Q Shows the actual value of ADC Q channel. PN512 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 4.5 — 17 December 2013
111345 68 of 136
NXP Semiconductors PN512
Full NFC Forum compliant solution
9.2.4.13 RFTReg
10. Digital interfaces
10.1 Automatic microcontroller interface detection
The PN512 supports direct interfacing of hosts using SPI, I2C-bus or serial UART
interfaces. The PN512 resets its interface and checks the current host interface type
automatically after performing a power-on or hard reset. The PN512 identifies the host
interface by sensing the logic levels on the control pins after the reset phase. This is done
using a combination of fixed pin connections. Table 141 shows the different connection
configurations.
Table 135. RFTReg register (address 3Ch); reset value: FFh, 11111111b
7 6 5 4 3 2 1 0
11111111
Access
Rights
RFT RFT RFT RFT RFT RFT RFT RFT
Table 136. Description of RFTReg bits
Bit Symbol Description
7 to 0 - Reserved for production tests.
Table 137. RFTReg register (address 3Dh, 3Fh); reset value: 00h, 00000000b
7 6 5 4 3 2 1 0
00000000
Access
Rights
RFT RFT RFT RFT RFT RFT RFT RFT
Table 138. Description of RFTReg bits
Bit Symbol Description
7 to 0 - Reserved for production tests.
Table 139. RFTReg register (address 3Eh); reset value: 03h, 00000011b
7 6 5 4 3 2 1 0
00000011
Access
Rights
RFT RFT RFT RFT RFT RFT RFT RFT
Table 140. Description of RFTReg bits
Bit Symbol Description
7 to 0 - Reserved for production tests.PN512 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 4.5 — 17 December 2013
111345 69 of 136
NXP Semiconductors PN512
Full NFC Forum compliant solution
[1] only available in HVQFN 40.
Table 141. Connection protocol for detecting different interface types
Pin Interface type
UART (input) SPI (output) I
2C-bus (I/O)
SDA RX NSS SDA
I
2C0 0 1
EA 0 1 EA
D7 TX MISO SCL
D6 MX MOSI ADR_0
D5 DTRQ SCK ADR_1
D4 - - ADR_2
D3 - - ADR_3
D2 - - ADR_4
D1 - - ADR_5
Table 142. Connection scheme for detecting the different interface types
PN512 Parallel Interface Type Serial Interface Types
Separated Read/Write Strobe Common Read/Write Strobe
Pin Dedicated
Address Bus
Multiplexed
Address Bus
Dedicated
Address Bus
Multiplexed
Address Bus
UART SPI I
2C
ALE 1 ALE 1 AS RX NSS SDA
A5[1] A5 0 A5 0 0 0 0
A4[1] A4 0 A4 0 0 0 0
A3[1] A3 0 A3 0 0 0 0
A2[1] A2 1 A2 1 0 0 0
A1 A1 1 A1 1 0 0 1
A0 A0 1 A0 0 0 1 EA
NRD[1] NRD NRD NDS NDS 1 1 1
NWR[1] NWR NWR RD/NWR RD/NWR 1 1 1
NCS[1] NCS NCS NCS NCS NCS NCS NCS
D7 D7 D7 D7 D7 TX MISO SCL
D6 D6 D6 D6 D6 MX MOSI ADR_0
D5 D5 AD5 D5 AD5 DTRQ SCK ADR_1
D4 D4 AD4 D4 AD4 - - ADR_2
D3 D3 AD3 D3 AD3 - - ADR_3
D2 D2 AD2 D2 AD2 - - ADR_4
D1 D1 AD1 D1 AD1 - - ADR_5
D0 D0 AD0 D0 AD0 - - ADR_6
Remark: Overview on the pin behavior
Pin behavior Input Output In/OutPN512 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 4.5 — 17 December 2013
111345 70 of 136
NXP Semiconductors PN512
Full NFC Forum compliant solution
10.2 Serial Peripheral Interface
A serial peripheral interface (SPI compatible) is supported to enable high-speed
communication to the host. The interface can handle data speeds up to 10 Mbit/s. When
communicating with a host, the PN512 acts as a slave, receiving data from the external
host for register settings, sending and receiving data relevant for RF interface
communication.
An interface compatible with SPI enables high-speed serial communication between the
PN512 and a microcontroller. The implemented interface is in accordance with the SPI
standard.
The timing specification is given in Section 26.1 on page 117.
The PN512 acts as a slave during SPI communication. The SPI clock signal SCK must be
generated by the master. Data communication from the master to the slave uses the
MOSI line. The MISO line is used to send data from the PN512 to the master.
Data bytes on both MOSI and MISO lines are sent with the MSB first. Data on both MOSI
and MISO lines must be stable on the rising edge of the clock and can be changed on the
falling edge. Data is provided by the PN512 on the falling clock edge and is stable during
the rising clock edge.
10.2.1 SPI read data
Reading data using SPI requires the byte order shown in Table 143 to be used. It is
possible to read out up to n-data bytes.
The first byte sent defines both the mode and the address.
[1] X = Do not care.
Remark: The MSB must be sent first.
10.2.2 SPI write data
To write data to the PN512 using SPI requires the byte order shown in Table 144. It is
possible to write up to n data bytes by only sending one address byte.
Fig 13. SPI connection to host
001aan220
PN512
SCK SCK
MOSI MOSI
MISO MISO
NSS NSS
Table 143. MOSI and MISO byte order
Line Byte 0 Byte 1 Byte 2 To Byte n Byte n + 1
MOSI address 0 address 1 address 2 ... address n 00
MISO X[1] data 0 data 1 ... data n 1 data nPN512 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 4.5 — 17 December 2013
111345 71 of 136
NXP Semiconductors PN512
Full NFC Forum compliant solution
The first send byte defines both the mode and the address byte.
[1] X = Do not care.
Remark: The MSB must be sent first.
10.2.3 SPI address byte
The address byte has to meet the following format.
The MSB of the first byte defines the mode used. To read data from the PN512 the MSB is
set to logic 1. To write data to the PN512 the MSB must be set to logic 0. Bits 6 to 1 define
the address and the LSB is set to logic 0.
10.3 UART interface
10.3.1 Connection to a host
Remark: Signals DTRQ and MX can be disabled by clearing TestPinEnReg register’s
RS232LineEn bit.
10.3.2 Selectable UART transfer speeds
The internal UART interface is compatible with an RS232 serial interface.
The default transfer speed is 9.6 kBd. To change the transfer speed, the host controller
must write a value for the new transfer speed to the SerialSpeedReg register. Bits
BR_T0[2:0] and BR_T1[4:0] define the factors for setting the transfer speed in the
SerialSpeedReg register.
The BR_T0[2:0] and BR_T1[4:0] settings are described in Table 10. Examples of different
transfer speeds and the relevant register settings are given in Table 11.
Table 144. MOSI and MISO byte order
Line Byte 0 Byte 1 Byte 2 To Byte n Byte n + 1
MOSI address 0 data 0 data 1 ... data n 1 data n
MISO X[1] X[1] X[1] ... X[1] X[1]
Table 145. Address byte 0 register; address MOSI
7 (MSB) 6 5 4 3 2 1 0 (LSB)
1 = read
0 = write
address 0
Fig 14. UART connection to microcontrollers
001aan221
PN512
RX RX
TX TX
DTRQ DTRQ
MX MXPN512 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 4.5 — 17 December 2013
111345 72 of 136
NXP Semiconductors PN512
Full NFC Forum compliant solution
[1] The resulting transfer speed error is less than 1.5 % for all described transfer speeds.
The selectable transfer speeds shown in Table 11 are calculated according to the
following equations:
If BR_T0[2:0] = 0:
(1)
If BR_T0[2:0] > 0:
(2)
Remark: Transfer speeds above 1228.8 kBd are not supported.
10.3.3 UART framing
Table 146. BR_T0 and BR_T1 settings
BR_Tn Bit 0 Bit 1 Bit 2 Bit 3 Bit 4 Bit 5 Bit 6 Bit 7
BR_T0 factor 1 1 2 4 8 16 32 64
BR_T1 range 1 to 32 33 to 64 33 to 64 33 to 64 33 to 64 33 to 64 33 to 64 33 to 64
Table 147. Selectable UART transfer speeds
Transfer speed (kBd) SerialSpeedReg value Transfer speed accuracy (%)[1]
Decimal Hexadecimal
7.2 250 FAh 0.25
9.6 235 EBh 0.32
14.4 218 DAh 0.25
19.2 203 CBh 0.32
38.4 171 ABh 0.32
57.6 154 9Ah 0.25
115.2 122 7Ah 0.25
128 116 74h 0.06
230.4 90 5Ah 0.25
460.8 58 3Ah 0.25
921.6 28 1Ch 1.45
1228.8 21 15h 0.32
transfer speed 27.12 106
BR_T0 1 + = --------------------------------
transfer speed 27.12 106
BR_T1 33 +
2
BR_T0 1 – -----------------------------------
-----------------------------------
=
Table 148. UART framing
Bit Length Value
Start 1-bit 0
Data 8 bits data
Stop 1-bit 1PN512 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 4.5 — 17 December 2013
111345 73 of 136
NXP Semiconductors PN512
Full NFC Forum compliant solution
Remark: The LSB for data and address bytes must be sent first. No parity bit is used
during transmission.
Read data: To read data using the UART interface, the flow shown in Table 149 must be
used. The first byte sent defines both the mode and the address.
Write data: To write data to the PN512 using the UART interface, the structure shown in
Table 150 must be used.
The first byte sent defines both the mode and the address.
Table 149. Read data byte order
Pin Byte 0 Byte 1
RX (pin 24) address -
TX (pin 31) - data 0
(1) Reserved.
Fig 15. UART read data timing diagram
001aak588
SA
ADDRESS
RX
TX
MX
DTRQ
A0 A1 A2 A3 A4 A5 (1) SO
SA D0 D1 D2 D3 D4 D5 D6 D7 SO
DATA
R/W
Table 150. Write data byte order
Pin Byte 0 Byte 1
RX (pin 24) address 0 data 0
TX (pin 31) - address 0xxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxx x x x xxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxx xx xx xxxxx
xxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxx xxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxx x x
xxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxx
xxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxx xxx PN512 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
COMPANY PUBLIC
Product data sheet Rev. 4.5 — 17 December 2013
111345 74 of 136
NXP Semiconductors PN512
Full NFC Forum compliant solution
Remark: The data byte can be sent directly after the address byte on pin RX.
Address byte: The address byte has to meet the following format:
(1) Reserved.
Fig 16. UART write data timing diagram
001aak589
SA
ADDRESS
RX
TX
MX
DTRQ
A0 A1 A2 A3 A4 A5 (1) SO SA D0 D1 D2 D3 D4 D5 D6 D7 SO
SA A0 A1 A2 A3 A4 A5 (1) SO
DATA
ADDRESS
R/W
R/WPN512 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 4.5 — 17 December 2013
111345 75 of 136
NXP Semiconductors PN512
Full NFC Forum compliant solution
The MSB of the first byte sets the mode used. To read data from the PN512, the MSB is
set to logic 1. To write data to the PN512 the MSB is set to logic 0. Bit 6 is reserved for
future use, and bits 5 to 0 define the address; see Table 151.
10.4 I2C Bus Interface
An I2C-bus (Inter-IC) interface is supported to enable a low-cost, low pin count serial bus
interface to the host. The I2C-bus interface is implemented according to
NXP Semiconductors’ I
2C-bus interface specification, rev. 2.1, January 2000. The
interface can only act in Slave mode. Therefore the PN512 does not implement clock
generation or access arbitration.
The PN512 can act either as a slave receiver or slave transmitter in Standard mode, Fast
mode and High-speed mode.
SDA is a bidirectional line connected to a positive supply voltage using a current source or
a pull-up resistor. Both SDA and SCL lines are set HIGH when data is not transmitted. The
PN512 has a 3-state output stage to perform the wired-AND function. Data on the I2C-bus
can be transferred at data rates of up to 100 kBd in Standard mode, up to 400 kBd in Fast
mode or up to 3.4 Mbit/s in High-speed mode.
If the I2C-bus interface is selected, spike suppression is activated on lines SCL and SDA
as defined in the I2C-bus interface specification.
See Table 171 on page 117 for timing requirements.
Table 151. Address byte 0 register; address MOSI
7 (MSB) 6 5 4 3 2 1 0 (LSB)
1 = read
0 = write
reserved address
Fig 17. I2C-bus interface
001aan222
PN512
SDA
SCL
I2C
EA
ADR_[5:0]
PULL-UP
NETWORK
CONFIGURATION
WIRING
PULL-UP
NETWORK
MICROCONTROLLERPN512 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 4.5 — 17 December 2013
111345 76 of 136
NXP Semiconductors PN512
Full NFC Forum compliant solution
10.4.1 Data validity
Data on the SDA line must be stable during the HIGH clock period. The HIGH or LOW
state of the data line must only change when the clock signal on SCL is LOW.
10.4.2 START and STOP conditions
To manage the data transfer on the I2C-bus, unique START (S) and STOP (P) conditions
are defined.
• A START condition is defined with a HIGH-to-LOW transition on the SDA line while
SCL is HIGH.
• A STOP condition is defined with a LOW-to-HIGH transition on the SDA line while
SCL is HIGH.
The I2C-bus master always generates the START and STOP conditions. The bus is busy
after the START condition. The bus is free again a certain time after the STOP condition.
The bus stays busy if a repeated START (Sr) is generated instead of a STOP condition.
The START (S) and repeated START (Sr) conditions are functionally identical. Therefore,
S is used as a generic term to represent both the START (S) and repeated START (Sr)
conditions.
10.4.3 Byte format
Each byte must be followed by an acknowledge bit. Data is transferred with the MSB first;
see Figure 22. The number of transmitted bytes during one data transfer is unrestricted
but must meet the read/write cycle format.
Fig 18. Bit transfer on the I2C-bus
mbc621
data line
stable;
data valid
change
of data
allowed
SDA
SCL
Fig 19. START and STOP conditions
mbc622
SDA
SCL
P
STOP condition
SDA
SCL
S
START conditionPN512 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 4.5 — 17 December 2013
111345 77 of 136
NXP Semiconductors PN512
Full NFC Forum compliant solution
10.4.4 Acknowledge
An acknowledge must be sent at the end of one data byte. The acknowledge-related clock
pulse is generated by the master. The transmitter of data, either master or slave, releases
the SDA line (HIGH) during the acknowledge clock pulse. The receiver pulls down the
SDA line during the acknowledge clock pulse so that it remains stable LOW during the
HIGH period of this clock pulse.
The master can then generate either a STOP (P) condition to stop the transfer or a
repeated START (Sr) condition to start a new transfer.
A master-receiver indicates the end of data to the slave-transmitter by not generating an
acknowledge on the last byte that was clocked out by the slave. The slave-transmitter
releases the data line to allow the master to generate a STOP (P) or repeated START (Sr)
condition.
Fig 20. Acknowledge on the I2C-bus
mbc602
S
START
condition
1 2 8 9
clock pulse for
acknowledgement
not acknowledge
acknowledge
data output
by transmitter
data output
by receiver
SCL from
master
Fig 21. Data transfer on the I2C-bus
msc608
Sr
or
P
SDA
Sr
P
SCL
STOP or
repeated START
condition
S
or
Sr
START or
repeated START
condition
1 2 3 - 8 9
ACK
9
ACK
1 2 7 8
MSB acknowledgement
signal from slave
byte complete,
interrupt within slave
clock line held LOW while
interrupts are serviced
acknowledgement
signal from receiverPN512 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 4.5 — 17 December 2013
111345 78 of 136
NXP Semiconductors PN512
Full NFC Forum compliant solution
10.4.5 7-Bit addressing
During the I2C-bus address procedure, the first byte after the START condition is used to
determine which slave will be selected by the master.
Several address numbers are reserved. During device configuration, the designer must
ensure that collisions with these reserved addresses cannot occur. Check the I
2C-bus
specification for a complete list of reserved addresses.
The I2C-bus address specification is dependent on the definition of pin EA. Immediately
after releasing pin NRSTPD or after a power-on reset, the device defines the I2C-bus
address according to pin EA.
If pin EA is set LOW, the upper 4 bits of the device bus address are reserved by
NXP Semiconductors and set to 0101b for all PN512 devices. The remaining 3 bits
(ADR_0, ADR_1, ADR_2) of the slave address can be freely configured by the customer
to prevent collisions with other I2C-bus devices.
If pin EA is set HIGH, ADR_0 to ADR_5 can be completely specified at the external pins
according to Table 141 on page 69. ADR_6 is always set to logic 0.
In both modes, the external address coding is latched immediately after releasing the
reset condition. Further changes at the used pins are not taken into consideration.
Depending on the external wiring, the I2C-bus address pins can be used for test signal
outputs.
10.4.6 Register write access
To write data from the host controller using the I2C-bus to a specific register in the PN512
the following frame format must be used.
• The first byte of a frame indicates the device address according to the I2C-bus rules.
• The second byte indicates the register address followed by up to n-data bytes.
In one frame all data bytes are written to the same register address. This enables fast
FIFO buffer access. The Read/Write (R/W) bit is set to logic 0.
Fig 22. First byte following the START procedure
slave address 001aak591
bit 6 bit 5 bit 4 bit 3 bit 2 bit 1 bit 0 R/W
MSB LSBPN512 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 4.5 — 17 December 2013
111345 79 of 136
NXP Semiconductors PN512
Full NFC Forum compliant solution
10.4.7 Register read access
To read out data from a specific register address in the PN512, the host controller must
use the following procedure:
• Firstly, a write access to the specific register address must be performed as indicated
in the frame that follows
• The first byte of a frame indicates the device address according to the I2C-bus rules
• The second byte indicates the register address. No data bytes are added
• The Read/Write bit is 0
After the write access, read access can start. The host sends the device address of the
PN512. In response, the PN512 sends the content of the read access register. In one
frame all data bytes can be read from the same register address. This enables fast FIFO
buffer access or register polling.
The Read/Write (R/W) bit is set to logic 1.
Fig 23. Register read and write access
001aak592
S A 0 0
I
2C-BUS
SLAVE ADDRESS
[A7:A0]
JOINER REGISTER
ADDRESS [A5:A0]
write cycle
0
(W) A DATA
[7:0] [0:n]
[0:n]
[0:n]
A
P
S A 0 0
I
2C-BUS
SLAVE ADDRESS
[A7:A0]
JOINER REGISTER
ADDRESS [A5:A0]
read cycle
optional, if the previous access was on the same register address
0
(W) A P
P
S
S start condition
P stop condition
A acknowledge
A not acknowledge
W write cycle
R read cycle
A
I
2C-BUS
SLAVE ADDRESS
[A7:A0]
sent by master
sent by slave
DATA
[7:0]
1
(R) A
DATA
[7:0]
APN512 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 4.5 — 17 December 2013
111345 80 of 136
NXP Semiconductors PN512
Full NFC Forum compliant solution
10.4.8 High-speed mode
In High-speed mode (HS mode), the device can transfer information at data rates of up to
3.4 Mbit/s, while remaining fully downward-compatible with Fast or Standard mode
(F/S mode) for bidirectional communication in a mixed-speed bus system.
10.4.9 High-speed transfer
To achieve data rates of up to 3.4 Mbit/s the following improvements have been made to
I
2C-bus operation.
• The inputs of the device in HS mode incorporate spike suppression, a Schmitt trigger
on the SDA and SCL inputs and different timing constants when compared to
F/S mode
• The output buffers of the device in HS mode incorporate slope control of the falling
edges of the SDA and SCL signals with different fall times compared to F/S mode
10.4.10 Serial data transfer format in HS mode
The HS mode serial data transfer format meets the Standard mode I2C-bus specification.
HS mode can only start after all of the following conditions (all of which are in F/S mode):
1. START condition (S)
2. 8-bit master code (00001XXXb)
3. Not-acknowledge bit (A)
When HS mode starts, the active master sends a repeated START condition (Sr) followed
by a 7-bit slave address with a R/W bit address and receives an acknowledge bit (A) from
the selected PN512.
Data transfer continues in HS mode after the next repeated START (Sr), only switching
back to F/S mode after a STOP condition (P). To reduce the overhead of the master code,
a master links a number of HS mode transfers, separated by repeated START conditions
(Sr).
Fig 24. I2C-bus HS mode protocol switch
F/S mode HS mode (current-source for SCL HIGH enabled) F/S mode
001aak749
A A/A A DATA
(n-bytes + A)
S MASTER CODE Sr SLAVE ADDRESS R/W
HS mode continues
Sr SLAVE ADDRESS
PPN512 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 4.5 — 17 December 2013
111345 81 of 136
NXP Semiconductors PN512
Full NFC Forum compliant solution
Fig 25. I2C-bus HS mode protocol frame
msc618
8-bit master code 0000 1xxx A
tH
t1
S
F/S mode
HS mode
If P then
F/S mode
If Sr (dotted lines)
then HS mode
1 6789 6789 1
1 2 to 5
2 to 5 2 to 5
67 89
SDA high
SCL high
SDA high
SCL high
tH tFS
Sr Sr P 7-bit SLA R/W A n + (8-bit data + A/A)
= Master current source pull-up
= Resistor pull-upPN512 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 4.5 — 17 December 2013
111345 82 of 136
NXP Semiconductors PN512
Full NFC Forum compliant solution
10.4.11 Switching between F/S mode and HS mode
After reset and initialization, the PN512 is in Fast mode (which is in effect F/S mode as
Fast mode is downward-compatible with Standard mode). The connected PN512
recognizes the “S 00001XXX A” sequence and switches its internal circuitry from the Fast
mode setting to the HS mode setting.
The following actions are taken:
1. Adapt the SDA and SCL input filters according to the spike suppression requirement
in HS mode.
2. Adapt the slope control of the SDA output stages.
It is possible for system configurations that do not have other I2C-bus devices involved in
the communication to switch to HS mode permanently. This is implemented by setting
Status2Reg register’s I2CForceHS bit to logic 1. In permanent HS mode, the master code
is not required to be sent. This is not defined in the specification and must only be used
when no other devices are connected on the bus. In addition, spikes on the I2C-bus lines
must be avoided because of the reduced spike suppression.
10.4.12 PN512 at lower speed modes
PN512 is fully downward-compatible and can be connected to an F/S mode I2C-bus
system. The device stays in F/S mode and communicates at F/S mode speeds because a
master code is not transmitted in this configuration.
11. 8-bit parallel interface
The PN512 supports two different types of 8-bit parallel interfaces, Intel and Motorola
compatible modes.
11.1 Overview of supported host controller interfaces
The PN512 supports direct interfacing to various -Controllers. The following table shows
the parallel interface types supported by the PN512.
Table 152. Supported interface types
Supported interface types Bus Separated Address and
Data Bus
Multiplexed Address
and Data Bus
Separated Read and Write
Strobes (INTEL compatible)
control NRD, NWR, NCS NRD, NWR, NCS, ALE
address A0 … A3 [..A5*] AD0 … AD7
data D0 … D7 AD0 … AD7
Multiplexed Read and Write
Strobe (Motorola compatible)
control R/NW, NDS, NCS R/NW, NDS, NCS, AS
address A0 … A3 [..A5*] AD0 … AD7
data D0 … D7 AD0 … AD7PN512 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 4.5 — 17 December 2013
111345 83 of 136
NXP Semiconductors PN512
Full NFC Forum compliant solution
11.2 Separated Read/Write strobe
For timing requirements refer to Section 26.2 “8-bit parallel interface timing”.
11.3 Common Read/Write strobe
For timing requirements refer to Section 26.2 “8-bit parallel interface timing”
Fig 26. Connection to host controller with separated Read/Write strobes
001aan223
PN512
NCS
A0...A3[A5*]
D0...D7
A0
A1
A2
A3
A4*
A5*
address bus (A0...A3[A5*])
ALE
NRD
NWR
ADDRESS
DECODER
data bus (D0...D7)
high
not data strobe (NRD)
not write (NWR)
address bus
remark: *depending on the package type.
multiplexed address/data AD0...AD7)
PN512
NCS
D0...D7
ALE
NRD
NWR
ADDRESS
DECODER
low
low
high
high
high
low
address latch enable (ALE)
not read strobe (NRD)
not write (NWR)
non multiplexed
address
Fig 27. Connection to host controller with common Read/Write strobes
001aan224
PN512
NCS
A0...A3[A5*]
D0...D7
A0
A1
A2
A3
A4*
A5*
address bus (A0...A3[A5*])
ALE
NRD
NWR
ADDRESS
DECODER
Data bus (D0...D7)
high
not data strobe (NDS)
read not write (RD/NWR)
address bus
remark: *depending on the package type.
multiplexed address/data AD0...AD7)
PN512
NCS
D0...D7
ALE
NRD
NWR
ADDRESS
DECODER
low
low
high
high
low
low
address strobe (AS)
not data strobe (NDS)
read not write (RD/NWR)
non multiplexed
addressPN512 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 4.5 — 17 December 2013
111345 84 of 136
NXP Semiconductors PN512
Full NFC Forum compliant solution
12. Analog interface and contactless UART
12.1 General
The integrated contactless UART supports the external host online with framing and error
checking of the protocol requirements up to 848 kBd. An external circuit can be connected
to the communication interface pins MFIN and MFOUT to modulate and demodulate the
data.
The contactless UART handles the protocol requirements for the communication
protocols in cooperation with the host. Protocol handling generates bit and byte-oriented
framing. In addition, it handles error detection such as parity and CRC, based on the
various supported contactless communication protocols.
Remark: The size and tuning of the antenna and the power supply voltage have an
important impact on the achievable operating distance.
12.2 TX driver
The signal on pins TX1 and TX2 is the 13.56 MHz energy carrier modulated by an
envelope signal. It can be used to drive an antenna directly using a few passive
components for matching and filtering; see Section 15 on page 96. The signal on pins TX1
and TX2 can be configured using the TxControlReg register; see Section 9.2.2.5 on
page 40.
The modulation index can be set by adjusting the impedance of the drivers. The
impedance of the p-driver can be configured using registers CWGsPReg and
ModGsPReg. The impedance of the n-driver can be configured using the GsNReg
register. The modulation index also depends on the antenna design and tuning.
The TxModeReg and TxSelReg registers control the data rate and framing during
transmission and the antenna driver setting to support the different requirements at the
different modes and transfer speeds.
[1] X = Do not care.
Table 153. Register and bit settings controlling the signal on pin TX1
Bit
Tx1RFEn
Bit
Force
100ASK
Bit
InvTx1RFOn
Bit
InvTx1RFOff
Envelope Pin
TX1
GSPMos GSNMos Remarks
0 X[1] X[1] X[1] X[1] X[1] CWGsNOff CWGsNOff not specified if RF is
switched off
1 00 X[1] 0 RF pMod nMod 100 % ASK: pin TX1
pulled to logic 0,
independent of the
InvTx1RFOff bit
1 RF pCW nCW
01 X[1] 0 RF pMod nMod
1 RF pCW nCW
11 X[1] 0 0 pMod nMod
1 RF_n pCW nCWPN512 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 4.5 — 17 December 2013
111345 85 of 136
NXP Semiconductors PN512
Full NFC Forum compliant solution
[1] X = Do not care.
The following abbreviations have been used in Table 153 and Table 154:
• RF: 13.56 MHz clock derived from 27.12 MHz quartz crystal oscillator divided by 2
• RF_n: inverted 13.56 MHz clock
• GSPMos: conductance, configuration of the PMOS array
• GSNMos: conductance, configuration of the NMOS array
• pCW: PMOS conductance value for continuous wave defined by the CWGsPReg
register
• pMod: PMOS conductance value for modulation defined by the ModGsPReg register
• nCW: NMOS conductance value for continuous wave defined by the GsNReg
register’s CWGsN[3:0] bits
• nMod: NMOS conductance value for modulation defined by the GsNReg register’s
ModGsN[3:0] bits
• X = do not care.
Remark: If only one driver is switched on, the values for CWGsPReg, ModGsPReg and
GsNReg registers are used for both drivers.
12.3 RF level detector
The RF level detector is integrated to fulfill NFCIP1 protocol requirements (e.g. RF
collision avoidance). Furthermore the RF level detector can be used to wake up the
PN512 and to generate an interrupt.
Table 154. Register and bit settings controlling the signal on pin TX2
Bit
Tx1RFEn
Bit
Force
100ASK
Bit
Tx2CW
Bit
InvTx2RFOn
Bit
InvTx2RFOff
Envelope
Pin
TX2
GSPMos GSNMos Remarks
0 X[1] X[1] X[1] X[1] X[1] X[1] CWGsNOff CWGsNOff not specified if
RF is switched
off
1 0 00 X[1] 0 RF pMod nMod -
1 RF pCW nCW
1 X[1] 0 RF_n pMod nMod
1 RF_n pCW nCW
10 X[1] X[1] RF pCW nCW conductance
always CW for
the Tx2CW bit
1 X[1] X[1] RF_n pCW nCW
1 00 X[1] 0 0 pMod nMod 100 % ASK: pin
TX2 pulled
to logic 0
(independent of
the
InvTx2RFOn/In
vTx2RFOff bits)
1 RF pCW nCW
1 X[1] 0 0 pMod nMod
1 RF_n pCW nCW
10 X[1] X[1] RF pCW nCW
1 X[1] X[1] RF_n pCW nCWPN512 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 4.5 — 17 December 2013
111345 86 of 136
NXP Semiconductors PN512
Full NFC Forum compliant solution
The sensitivity of the RF level detector is adjustable in a 4-bit range using the bits RFLevel
in register RFCfgReg. The sensitivity itself depends on the antenna configuration and
tuning.
Possible sensitivity levels at the RX pin are listed in the Table 154.
To increase the sensitivity of the RF level detector an amplifier can be activated by setting
the bit RFLevelAmp in register RFCfgReg to 1.
Remark: During soft Power-down mode the RF level detector amplifier is automatically
switched off to ensure that the power consumption is less than 10 A at 3 V.
Remark: With typical antennas lower sensitivity levels can provoke misleading results
because of intrinsic noise in the environment.
Note: It is recommended to use the bit RFLevelAmp only with higher RF level settings.
12.4 Data mode detector
The Data mode detector gives the possibility to detect received signals according to the
ISO/IEC 14443A/MIFARE, FeliCa or NFCIP-1 schemes at the standard transfer speeds
for 106 kbit, 212 kbit and 424 kbit in order to prepare the internal receiver in a fast and
convenient way for further data processing.
The Data mode detector can only be activated by the AutoColl command. The mode
detector resets, when no external RF field is detected by the RF level detector. The Data
mode detector could be switched off during the AutoColl command by setting bit
ModeDetOff in register ModeReg to 1.
Table 155. Setting of the bits RFlevel in register RFCfgReg (RFLevel amplifier deactivated)
V~Rx [Vpp] RFLevel
~2 1111
~1.4 1110
~0.99 1101
~0.69 1100
~0.49 1011
~0.35 1010
~0.24 1001
~0.17 1000
~0.12 0111
~0.083 0110
~0.058 0101
~0.041 0100
~0.029 0011
~0.020 0010
~0.014 0001
~0.010 0000PN512 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 4.5 — 17 December 2013
111345 87 of 136
NXP Semiconductors PN512
Full NFC Forum compliant solution
Fig 28. Data mode detector
001aan225
HOST INTERFACES
RECEIVER
I/Q DEMODULATOR
REGISTERS
REGISTERSETTING
FOR THE
DETECTED MODE
DATA MODE DETECTOR
PN512 RX
NFC @ 106 kbit/s
NFC @ 212 kbit/s
NFC @ 424 kbit/sPN512 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 4.5 — 17 December 2013
111345 88 of 136
NXP Semiconductors PN512
Full NFC Forum compliant solution
12.5 Serial data switch
Two main blocks are implemented in the PN512. The digital block comprises the state
machines, encoder/decoder logic. The analog block comprises the modulator and
antenna drivers, the receiver and amplifiers. The interface between these two blocks can
be configured in the way, that the interfacing signals may be routed to the pins SIGIN and
SIGOUT. SIGIN is capable of processing digital NFC signals on transfer speeds above
424 kbit. The SIGOUT pin can provide a digital signal that can be used with an additional
external circuit to generate transfer speeds above 424 kbit (including 106, 212 and
424 kbit). Furthermore SIGOUT and SIGIN can be used to enable the S2C interface in the
card SAM mode to emulate a card functionality with the PN512 and a secure IC. A secure
IC can be the SmartMX smart card controller IC.
This topology allows the analog block of the PN512 to be connected to the digital block of
another device.
The serial signal switch is controlled by the TxSelReg and RxSelReg registers.
Figure 29 shows the serial data switch for TX1 and TX2.
12.6 S2C interface support
The S2C provides the possibility to directly connect a secure IC to the PN512 in order act
as a contactless smart card IC via the PN512. The interfacing signals can be routed to the
pins SIGIN and SIGOUT. SIGIN can receive either a digital FeliCa or digitized
ISO/IEC 14443A signal sent by the secure IC. The SIGOUT pin can provide a digital
signal and a clock to communicate to the secure IC. A secure IC can be the smart card IC
provided by NXP Semiconductors.
The PN512 has an extra supply pin (SVDD and PVSS as Ground line) for the SIGIN and
SIGOUT pads.
Figure 31 outlines possible ways of communications via the PN512 to the secure IC.
Fig 29. Serial data switch for TX1 and TX2
001aak593
INTERNAL
CODER
INVERT IF
InvMod = 1
DriverSel[1:0]
00
01
10
11
3-state
to driver TX1 and TX2
0 = impedance = modulated
1 = impedance = CW 1
INVERT IF
PolMFin = 0 MFIN
envelopePN512 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 4.5 — 17 December 2013
111345 89 of 136
NXP Semiconductors PN512
Full NFC Forum compliant solution
Configured in the Secure Access Mode the host controller can directly communicate to
the Secure IC via SIGIN/SIGOUT. In this mode the PN512 generates the RF clock and
performs the communication on the SIGOUT line. To enable the Secure Access module
mode the clock has to be derived by the internal oscillator of the PN512, see bits
SAMClockSel in register TestSel1Reg.
Configured in Contactless Card mode the secure IC can act as contactless smart card IC
via the PN512. In this mode the signal on the SIGOUT line is provided by the external RF
field of the external reader/writer. To enable the Contactless Card mode the clock derived
by the external RF field has to be used.
The configuration of the S2C interface differs for the FeliCa and MIFARE scheme as
outlined in the following chapters.
Fig 30. Communication flows using the S2C interface
001aan226
CONTACTLESS UART
SERIAL SIGNAL SWITCH
FIFO AND STATE MACHINE
SPI, I2C, SERIAL UART
HOST CONTROLLER
PN512
SECURE CORE IC
SIGOUT
SIGIN
2. contactless
card mode
1. secure access
module (SAM) mode PN512 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 4.5 — 17 December 2013
111345 90 of 136
NXP Semiconductors PN512
Full NFC Forum compliant solution
12.6.1 Signal shape for Felica S2C interface support
The FeliCa secure IC is connected to the PN512 via the pins SIGOUT and SIGIN.
The signal at SIGOUT contains the information of the 13.56 MHz clock and the digitized
demodulated signal. The clock and the demodulated signal is combined by using the
logical function exclusive or.
To ensure that this signal is free of spikes, the demodulated signal is digitally filtered first.
The time delay for that digital filtering is in the range of one bit length. The demodulated
signal changes only at a positive edge of the clock.
The register TxSelReg controls the setting at SIGOUT.
The answer of the FeliCa SAM is transferred from SIGIN directly to the antenna driver.
The modulation is done according to the register settings of the antenna drivers.
The clock is switched to AUX1 or AUX2 (see AnalogSelAux).
Note: A HIGH signal on AUX1 and AUX2 has the same level as AVDD. A HIGH signal at
SIGOUT has the same level as SVDD. Alternatively it is possible to use pin D0 as clock
output if a serial interface is used. The HIGH level at D0 is the same as PVDD.
Note: The signal on the antenna is shown in principle only. In reality the waveform is
sinusoidal.
Fig 31. Signal shape for SIGOUT in FeliCa card SAM mode
Fig 32. Signal shape for SIGIN in SAM mode
001aan227
clock
signal on
SIGIN
signal on
antenna
001aan228
clock
demodulated
signal
signal on
SIGOUTPN512 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 4.5 — 17 December 2013
111345 91 of 136
NXP Semiconductors PN512
Full NFC Forum compliant solution
12.6.2 Waveform shape for ISO/IEC 14443A and MIFARE S2C support
The secure IC, e.g. the SmartMX is connected to the PN512 via the pins SIGOUT and
SIGIN.
The waveform shape at SIGOUT is a digital 13.56 MHz Miller coded signal with levels
between PVSS and PVDD derived out of the external 13.56 MHz carrier signal in case of
the Contactless Card mode or internally generated in terms of Secure Access mode.
The register TxSelReg controls the setting at SIGOUT.
Note: The clock settings for the Secure Access mode and the Contactless Card mode
differ, refer to the description of the bits SAMClockSel in register TestSel1Reg.
The signal at SIGIN is a digital Manchester coded signal according to the requirements of
the ISO/IEC 14443A with the subcarrier frequency of 847.5 kHz generated by the secure
IC.
Fig 33. Signal shape for SIGOUT in MIFARE Card SAM mode
Fig 34. Signal shape for SIGIN in MIFARE Card SAM mode
001aan229
1
0
bit
value RF
signal on
antenna
signal on
SIGOUT
01001
001aan230
0
1
0
1 1 0 0
bit
value
signal on
antenna
signal on
SIGINPN512 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 4.5 — 17 December 2013
111345 92 of 136
NXP Semiconductors PN512
Full NFC Forum compliant solution
12.7 Hardware support for FeliCa and NFC polling
12.7.1 Polling sequence functionality for initiator
1. Timer: The PN512 has a timer, which can be programmed in a way that it generates
an interrupt at the end of each timeslot, or if required an interrupt is generated at the
end of the last timeslot.
2. The receiver can be configured in a way to receive continuously. In this mode it can
receive any number of packets. The receiver is ready to receive the next packet
directly after the last packet has been received. This mode is active by setting the bit
RxMultiple in register RxModeReg to 1 and has to be stopped by software.
3. The internal UART adds one byte to the end of every received packet, before it is
transferred into the FIFO-buffer. This byte indicates if the received byte packet is
correct (see register ErrReg). The first byte of each packet contains the length byte of
the packet.
4. The length of one packet is 18 or 20 bytes (+ 1 byte Error-Info). The FIFO has a
length of 64 bytes. This means three packets can be stored in the FIFO at the same
time. If more than three packets are expected, the host controller has to empty the
FIFO, before the FIFO is filled completely. In case of a FIFO-overflow data is lost (See
bit BufferOvfl in register ErrorReg).
12.7.2 Polling sequence functionality for target
1. The host controller has to configure the PN512 with the correct polling response
parameters for the polling command.
2. To activate the automatic polling in Target mode, the AutoColl Command has to be
activated.
3. The PN512 receives the polling command send out by an initiator and answers with
the polling response. The timeslot is selected automatically (The timeslot itself is
randomly generated, but in the range 0 to TSN, which is defined by the Polling
command). The PN512 compares the system code, stored in byte 17 and 18 of the
Config Command with the system code received by the polling command of an
initiator. If the system code is equal, the PN512 answers according to the configured
polling response. The system code FF (hex) acts as a wildcard for the system code
bytes, i.e. a target of a system code 1234 (hex) answers to the polling command with
one of the following system codes 1234 (hex), 12FF (hex), FF34 (hex) or FFFF (hex).
If the system code does not match no answer is sent back by the PN512.
If a valid command is received by the PN512, which is not a Polling command, no
answer is sent back and the command AutoColl is stopped. The received packet is
stored in the FIFO.PN512 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 4.5 — 17 December 2013
111345 93 of 136
NXP Semiconductors PN512
Full NFC Forum compliant solution
12.7.3 Additional hardware support for FeliCa and NFC
Additionally to the polling sequence support for the Felica mode, the PN512 supports the
check of the Len-byte.
The received Len-byte in accordance to the registers FelNFC1Reg and FelNFC2Reg:
DataLenMin in register FelNFC1Reg defines the minimum length of the accepted packet
length. This register is six bit long. Each bit represents a length of four bytes.
DataLenMax in register FelNFC2Reg defines the maximum length of the accepted
package. This register is six bit long. Each bit represents a length of four bytes. If set to
logic 1 this limit is ignored. If the length is not in the supposed range, the packet is not
transferred to the FIFO and receiving is kept active.
Example 1:
• DataLenMin = 4
– The length shall be greater or equal 16.
• DataLenMax = 5
– The length shall be smaller than 20. Valid area: 16, 17, 18, 19
Example 2:
• DataLenMin = 9
– The length shall be greater or equal 36.
• DataLenMax = 0
– The length shall be smaller than 256. Valid area: 36 to 255
12.7.4 CRC coprocessor
The following CRC coprocessor parameters can be configured:
• The CRC preset value can be either 0000h, 6363h, A671h or FFFFh depending on
the ModeReg register’s CRCPreset[1:0] bits setting
• The CRC polynomial for the 16-bit CRC is fixed to x16 + x12 + x5 + 1
• The CRCResultReg register indicates the result of the CRC calculation. This register
is split into two 8-bit registers representing the higher and lower bytes.
• The ModeReg register’s MSBFirst bit indicates that data will be loaded with the MSB
first.
Table 156. CRC coprocessor parameters
Parameter Value
CRC register length 16-bit CRC
CRC algorithm algorithm according to ISO/IEC 14443 A and ITU-T
CRC preset value 0000h, 6363h, A671h or FFFFh depending on the setting of the
ModeReg register’s CRCPreset[1:0] bitsPN512 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 4.5 — 17 December 2013
111345 94 of 136
NXP Semiconductors PN512
Full NFC Forum compliant solution
13. FIFO buffer
An 8 64 bit FIFO buffer is used in the PN512. It buffers the input and output data stream
between the host and the PN512’s internal state machine. This makes it possible to
manage data streams up to 64 bytes long without the need to take timing constraints into
account.
13.1 Accessing the FIFO buffer
The FIFO buffer input and output data bus is connected to the FIFODataReg register.
Writing to this register stores one byte in the FIFO buffer and increments the internal FIFO
buffer write pointer. Reading from this register shows the FIFO buffer contents stored in
the FIFO buffer read pointer and decrements the FIFO buffer read pointer. The distance
between the write and read pointer can be obtained by reading the FIFOLevelReg
register.
When the microcontroller starts a command, the PN512 can, while the command is in
progress, access the FIFO buffer according to that command. Only one FIFO buffer has
been implemented which can be used for input and output. The microcontroller must
ensure that there are not any unintentional FIFO buffer accesses.
13.2 Controlling the FIFO buffer
The FIFO buffer pointers can be reset by setting FIFOLevelReg register’s FlushBuffer bit
to logic 1. Consequently, the FIFOLevel[6:0] bits are all set to logic 0 and the ErrorReg
register’s BufferOvfl bit is cleared. The bytes stored in the FIFO buffer are no longer
accessible allowing the FIFO buffer to be filled with another 64 bytes.
13.3 FIFO buffer status information
The host can get the following FIFO buffer status information:
• Number of bytes stored in the FIFO buffer: FIFOLevelReg register’s FIFOLevel[6:0]
• FIFO buffer almost full warning: Status1Reg register’s HiAlert bit
• FIFO buffer almost empty warning: Status1Reg register’s LoAlert bit
• FIFO buffer overflow warning: ErrorReg register’s BufferOvfl bit. The BufferOvfl bit
can only be cleared by setting the FIFOLevelReg register’s FlushBuffer bit.
The PN512 can generate an interrupt signal when:
• ComIEnReg register’s LoAlertIEn bit is set to logic 1. It activates pin IRQ when
Status1Reg register’s LoAlert bit changes to logic 1.
• ComIEnReg register’s HiAlertIEn bit is set to logic 1. It activates pin IRQ when
Status1Reg register’s HiAlert bit changes to logic 1.
If the maximum number of WaterLevel bytes (as set in the WaterLevelReg register) or less
are stored in the FIFO buffer, the HiAlert bit is set to logic 1. It is generated according to
Equation 3:
HiAlert 64 FIFOLength = – WaterLevel (3)PN512 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 4.5 — 17 December 2013
111345 95 of 136
NXP Semiconductors PN512
Full NFC Forum compliant solution
If the number of WaterLevel bytes (as set in the WaterLevelReg register) or less are
stored in the FIFO buffer, the LoAlert bit is set to logic 1. It is generated according to
Equation 4:
(4)
14. Interrupt request system
The PN512 indicates certain events by setting the Status1Reg register’s IRq bit and, if
activated, by pin IRQ. The signal on pin IRQ can be used to interrupt the host using its
interrupt handling capabilities. This allows the implementation of efficient host software.
14.1 Interrupt sources overview
Table 157 shows the available interrupt bits, the corresponding source and the condition
for its activation. The ComIrqReg register’s TimerIRq interrupt bit indicates an interrupt set
by the timer unit which is set when the timer decrements from 1 to 0.
The ComIrqReg register’s TxIRq bit indicates that the transmitter has finished. If the state
changes from sending data to transmitting the end of the frame pattern, the transmitter
unit automatically sets the interrupt bit. The CRC coprocessor sets the DivIrqReg
register’s CRCIRq bit after processing all the FIFO buffer data which is indicated by
CRCReady bit = 1.
The ComIrqReg register’s RxIRq bit indicates an interrupt when the end of the received
data is detected. The ComIrqReg register’s IdleIRq bit is set if a command finishes and
the Command[3:0] value in the CommandReg register changes to idle (see Table 158 on
page 101).
The ComIrqReg register’s HiAlertIRq bit is set to logic 1 when the Status1Reg register’s
HiAlert bit is set to logic 1 which means that the FIFO buffer has reached the level
indicated by the WaterLevel[5:0] bits.
The ComIrqReg register’s LoAlertIRq bit is set to logic 1 when the Status1Reg register’s
LoAlert bit is set to logic 1 which means that the FIFO buffer has reached the level
indicated by the WaterLevel[5:0] bits.
The ComIrqReg register’s ErrIRq bit indicates an error detected by the contactless UART
during send or receive. This is indicated when any bit is set to logic 1 in register ErrorReg.
LoAlert FIFOLength WaterLevel =
Table 157. Interrupt sources
Interrupt flag Interrupt source Trigger action
TimerIRq timer unit the timer counts from 1 to 0
TxIRq transmitter a transmitted data stream ends
CRCIRq CRC coprocessor all data from the FIFO buffer has been processed
RxIRq receiver a received data stream ends
IdleIRq ComIrqReg register command execution finishes
HiAlertIRq FIFO buffer the FIFO buffer is almost full
LoAlertIRq FIFO buffer the FIFO buffer is almost empty
ErrIRq contactless UART an error is detectedPN512 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 4.5 — 17 December 2013
111345 96 of 136
NXP Semiconductors PN512
Full NFC Forum compliant solution
15. Timer unit
A timer unit is implemented in the PN512. The external host controller may use this timer
to manage timing relevant tasks. The timer unit may be used in one of the following
configurations:
• Time-out counter
• Watch-dog counter
• Stop watch
• Programmable one-shot
• Periodical trigger
The timer unit can be used to measure the time interval between two events or to indicate
that a specific event occurred after a specific time. The timer can be triggered by events
which will be explained in the following, but the timer itself does not influence any internal
event (e.g. A time-out during data reception does not influence the reception process
automatically). Furthermore, several timer related bits are set and these bits can be used
to generate an interrupt.
Timer
The timer has an input clock of 13.56 MHz (derived from the 27.12 MHz quartz). The timer
consists of two stages: 1 prescaler and 1 counter.
The prescaler is a 12-bit counter. The reload value for TPrescaler can be defined between
0 and 4095 in register TModeReg and TPrescalerReg.
The reload value for the counter is defined by 16 bits in a range of 0 to 65535 in the
register TReloadReg.
The current value of the timer is indicated by the register TCounterValReg.
If the counter reaches 0 an interrupt will be generated automatically indicated by setting
the TimerIRq bit in the register CommonIRqReg. If enabled, this event can be indicated on
the IRQ line. The bit TimerIRq can be set and reset by the host controller. Depending on
the configuration the timer will stop at 0 or restart with the value from register
TReloadReg.
The status of the timer is indicated by bit TRunning in register Status1Reg.
The timer can be manually started by TStartNow in register ControlReg or manually
stopped by TStopNow in register ControlReg.
Furthermore the timer can be activated automatically by setting the bit TAuto in the
register TModeReg to fulfill dedicated protocol requirements automatically.
The time delay of a timer stage is the reload value +1.
The definition of total time is: t = ((TPrescaler*2+1)*TReload+1)/13.56MHz or if
TPrescaleEven bit is set: t = ((TPrescaler*2+2)*TReload+1)/13.56MHz
Maximum time: TPrescaler = 4095,TReloadVal = 65535
=> (2*4095 +2)*65536/13.56 MHz = 39.59 s
Example:PN512 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 4.5 — 17 December 2013
111345 97 of 136
NXP Semiconductors PN512
Full NFC Forum compliant solution
To indicate 25 us it is required to count 339 clock cycles. This means the value for
TPrescaler has to be set to TPrescaler = 169.The timer has now an input clock of 25 us.
The timer can count up to 65535 timeslots of each 25 s. For the behaviour in version
1.0, see Section 21 “Errata sheet” on page 109.PN512 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 4.5 — 17 December 2013
111345 98 of 136
NXP Semiconductors PN512
Full NFC Forum compliant solution
16. Power reduction modes
16.1 Hard power-down
Hard power-down is enabled when pin NRSTPD is LOW. This turns off all internal current
sinks including the oscillator. All digital input buffers are separated from the input pins and
clamped internally (except pin NRSTPD). The output pins are frozen at either a HIGH or
LOW level.
16.2 Soft power-down mode
Soft Power-down mode is entered immediately after the CommandReg register’s
PowerDown bit is set to logic 1. All internal current sinks are switched off, including the
oscillator buffer. However, the digital input buffers are not separated from the input pins
and keep their functionality. The digital output pins do not change their state.
During soft power-down, all register values, the FIFO buffer content and the configuration
keep their current contents.
After setting the PowerDown bit to logic 0, it takes 1024 clocks until the Soft power-down
mode is exited indicated by the PowerDown bit. Setting it to logic 0 does not immediately
clear it. It is cleared automatically by the PN512 when Soft power-down mode is exited.
Remark: If the internal oscillator is used, you must take into account that it is supplied by
pin AVDD and it will take a certain time (tosc) until the oscillator is stable and the clock
cycles can be detected by the internal logic. It is recommended for the serial UART, to first
send the value 55h to the PN512. The oscillator must be stable for further access to the
registers. To ensure this, perform a read access to address 0 until the PN512 answers to
the last read command with the register content of address 0. This indicates that the
PN512 is ready.
16.3 Transmitter power-down mode
The Transmitter Power-down mode switches off the internal antenna drivers thereby,
turning off the RF field. Transmitter power-down mode is entered by setting either the
TxControlReg register’s Tx1RFEn bit or Tx2RFEn bit to logic 0.PN512 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 4.5 — 17 December 2013
111345 99 of 136
NXP Semiconductors PN512
Full NFC Forum compliant solution
17. Oscillator circuitry
The clock applied to the PN512 provides a time basis for the synchronous system’s
encoder and decoder. The stability of the clock frequency, therefore, is an important factor
for correct operation. To obtain optimum performance, clock jitter must be reduced as
much as possible. This is best achieved using the internal oscillator buffer with the
recommended circuitry.
If an external clock source is used, the clock signal must be applied to pin OSCIN. In this
case, special care must be taken with the clock duty cycle and clock jitter and the clock
quality must be verified.
18. Reset and oscillator start-up time
18.1 Reset timing requirements
The reset signal is filtered by a hysteresis circuit and a spike filter before it enters the
digital circuit. The spike filter rejects signals shorter than 10 ns. In order to perform a reset,
the signal must be LOW for at least 100 ns.
18.2 Oscillator start-up time
If the PN512 has been set to a Power-down mode or is powered by a VDDX supply, the
start-up time for the PN512 depends on the oscillator used and is shown in Figure 36.
The time (tstartup) is the start-up time of the crystal oscillator circuit. The crystal oscillator
start-up time is defined by the crystal.
The time (td) is the internal delay time of the PN512 when the clock signal is stable before
the PN512 can be addressed.
The delay time is calculated by:
(5)
The time (tosc) is the sum of td and tstartup.
Fig 35. Quartz crystal connection
001aan231
PN512
27.12 MHz
OSCOUT OSCIN
td
1024
27 s = = -------------- 37.74 sPN512 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 4.5 — 17 December 2013
111345 100 of 136
NXP Semiconductors PN512
Full NFC Forum compliant solution
19. PN512 command set
The PN512 operation is determined by a state machine capable of performing a set of
commands. A command is executed by writing a command code (see Table 158) to the
CommandReg register.
Arguments and/or data necessary to process a command are exchanged via the FIFO
buffer.
19.1 General description
The PN512 operation is determined by a state machine capable of performing a set of
commands. A command is executed by writing a command code (see Table 158) to the
CommandReg register.
Arguments and/or data necessary to process a command are exchanged via the FIFO
buffer.
19.2 General behavior
• Each command that needs a data bit stream (or data byte stream) as an input
immediately processes any data in the FIFO buffer. An exception to this rule is the
Transceive command. Using this command, transmission is started with the
BitFramingReg register’s StartSend bit.
• Each command that needs a certain number of arguments, starts processing only
when it has received the correct number of arguments from the FIFO buffer.
• The FIFO buffer is not automatically cleared when commands start. This makes it
possible to write command arguments and/or the data bytes to the FIFO buffer and
then start the command.
• Each command can be interrupted by the host writing a new command code to the
CommandReg register, for example, the Idle command.
Fig 36. Oscillator start-up time
001aak596
tstartup td
tosc
t
device activation
oscillator
clock stable
clock readyPN512 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 4.5 — 17 December 2013
111345 101 of 136
NXP Semiconductors PN512
Full NFC Forum compliant solution
19.3 PN512 command overview
19.3.1 PN512 command descriptions
19.3.1.1 Idle
Places the PN512 in Idle mode. The Idle command also terminates itself.
19.3.1.2 Config command
To use the automatic MIFARE Anticollision, FeliCa Polling and NFCID3 the data used for
these transactions has to be stored internally. All the following data have to be written to
the FIFO in this order:
SENS_RES (2 bytes); in order byte 0, byte 1
NFCID1 (3 Bytes); in order byte 0, byte 1, byte 2; the first NFCID1 byte is fixed to 08h and
the check byte is calculated automatically.
SEL_RES (1 Byte)
polling response (2 bytes (shall be 01h, FEh) + 6 bytes NFCID2 + 8 bytes Pad + 2 bytes
system code)
NFCID3 (1 byte)
In total 25 bytes are transferred into an internal buffer.
The complete NFCID3 is 10 bytes long and consists of the 3 NFCID1 bytes, the 6 NFCID2
bytes and the one NFCID3 byte which are listed above.
To read out this configuration the command Config with an empty FIFO-buffer has to be
started. In this case the 25 bytes are transferred from the internal buffer to the FIFO.
Table 158. Command overview
Command Command
code
Action
Idle 0000 no action, cancels current command execution
Configure 0001 Configures the PN512 for FeliCa, MIFARE and NFCIP-1
communication
Generate RandomID 0010 generates a 10-byte random ID number
CalcCRC 0011 activates the CRC coprocessor or performs a self test
Transmit 0100 transmits data from the FIFO buffer
NoCmdChange 0111 no command change, can be used to modify the
CommandReg register bits without affecting the command,
for example, the PowerDown bit
Receive 1000 activates the receiver circuits
Transceive 1100 transmits data from FIFO buffer to antenna and automatically
activates the receiver after transmission
AutoColl 1101 Handles FeliCa polling (Card Operation mode only) and
MIFARE anticollision (Card Operation mode only)
MFAuthent 1110 performs the MIFARE standard authentication as a reader
SoftReset 1111 resets the PN512PN512 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 4.5 — 17 December 2013
111345 102 of 136
NXP Semiconductors PN512
Full NFC Forum compliant solution
The PN512 has to be configured after each power up, before using the automatic
Anticollision/Polling function (AutoColl command). During a hard power down (reset pin)
this configuration remains unchanged.
This command terminates automatically when finished and the active command is idle.
19.3.1.3 Generate RandomID
This command generates a 10-byte random number which is initially stored in the internal
buffer. This then overwrites the 10 bytes in the internal 25-byte buffer. This command
automatically terminates when finished and the PN512 returns to Idle mode.
19.3.1.4 CalcCRC
The FIFO buffer content is transferred to the CRC coprocessor and the CRC calculation is
started. The calculation result is stored in the CRCResultReg register. The CRC
calculation is not limited to a dedicated number of bytes. The calculation is not stopped
when the FIFO buffer is empty during the data stream. The next byte written to the FIFO
buffer is added to the calculation.
The CRC preset value is controlled by the ModeReg register’s CRCPreset[1:0] bits. The
value is loaded in to the CRC coprocessor when the command starts.
This command must be terminated by writing a command to the CommandReg register,
such as, the Idle command.
If the AutoTestReg register’s SelfTest[3:0] bits are set correctly, the PN512 enters Self
Test mode. Starting the CalcCRC command initiates a digital self test. The result of the
self test is written to the FIFO buffer.
19.3.1.5 Transmit
The FIFO buffer content is immediately transmitted after starting this command. Before
transmitting the FIFO buffer content, all relevant registers must be set for data
transmission.
This command automatically terminates when the FIFO buffer is empty. It can be
terminated by another command written to the CommandReg register.
19.3.1.6 NoCmdChange
This command does not influence any running command in the CommandReg register. It
can be used to manipulate any bit except the CommandReg register Command[3:0] bits,
for example, the RcvOff bit or the PowerDown bit.
19.3.1.7 Receive
The PN512 activates the receiver path and waits for a data stream to be received. The
correct settings must be chosen before starting this command.
This command automatically terminates when the data stream ends. This is indicated
either by the end of frame pattern or by the length byte depending on the selected frame
type and speed.
Remark: If the RxModeReg register’s RxMultiple bit is set to logic 1, the Receive
command will not automatically terminate. It must be terminated by starting another
command in the CommandReg register.PN512 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 4.5 — 17 December 2013
111345 103 of 136
NXP Semiconductors PN512
Full NFC Forum compliant solution
19.3.1.8 Transceive
This command continuously repeats the transmission of data from the FIFO buffer and the
reception of data from the RF field. The first action is transmit and after transmission the
command is changed to receive a data stream.
Each transmit process must be started by setting the BitFramingReg register’s StartSend
bit to logic 1. This command must be cleared by writing any command to the
CommandReg register.
Remark: If the RxModeReg register’s RxMultiple bit is set to logic 1, the Transceive
command never leaves the receive state because this state cannot be cancelled
automatically.
19.3.1.9 AutoColl
This command automatically handles the MIFARE activation and the FeliCa polling in the
Card Operation mode. The bit Initiator in the register ControlReg has to be set to logic 0
for correct operation. During this command also the mode detector is active if not
deactivated by setting the bit ModeDetOff in the ModeReg register. After the mode
detector detects a mode, all the mode dependent registers are set according to the
received data. In case of no external RF field the command resets the internal state
machine and returns to the initial state but it will not be terminated. When the command
terminates the transceive command gets active.
During protocol processing the IRQ bits are not supported. Only the last received frame
will serve the IRQ’s. The treatment of the TxCRCEn and RxCRCEn bits is different to the
protocol. During ISO/IEC 14443A activation the enable bits are defined by the command
AutoColl. The changes cannot be observed at the register TXModeReg and RXModeReg.
After the Transceive command is active, the value of the register bit is relevant.
The FIFO will also receive the two CRC check bytes of the last command even if they
already checked and correct, if the state machine (Anticollision and Select routine) has to
not been executed and 106 kbit is detected.
During Felica activation the register bit is always relevant and is not overruled by the
command settings. This command can be cleared by software by writing any other
command to the CommandReg register, e.g. the idle command. Writing the same content
again to the CommandReg register resets the state machine.PN512 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 4.5 — 17 December 2013
111345 104 of 136
NXP Semiconductors PN512
Full NFC Forum compliant solution
NFCIP-1 106 kbps Passive Communication mode:
The MIFARE anticollision is finished and the command has automatically changed to
Transceive. The FIFO contains the ATR_REQ frame including the start byte F0h. The bit
TargetActivated in the Status2Reg register is set to logic 1.
NFCIP-1 212/424 kbps Passive Communication mode:
The FeliCa polling command is finished and the command has automatically changed to
Transceive. The FIFO contains the ATR_REQ. The bit TargetActivated in the Status2Reg
register is set to logic 1.
NFCIP-1 106/212/424 kbps Active Communication mode:
This command is changing the automatically to the command Transceive. The FIFO
contains the ATR REQ The bit TargetActivated in the Status2Reg register is set to logic 0.
For 106 kbps only, the first byte in the FIFO indicates the start byte F0h and the CRC is
added to the FIFO.
Fig 37. Autocoll Command
NFCIP-1 106 kB aud
ISO14443-3
NPCIP-1 > 106 kB aud
FELICA
IDLE MODEO
MODE
detection
RXF
raming
MFHalted = 1
HALT
AC
nAC
SELECT
nSELECT
HLTA
AC
polling,
polling response
next frame
received
next frame
received
REQA, WUPA
READY
ACTIVE
WUPA
SELECT SELECT
READY*
ACTIVE*
TRANSCEIVE
wait for
transmit
next frame
received
J N
HLTA
REQA,
WUPA,
AC,
nAC,
SELECT,
nSELECT,
error
REQA,
AC,
nAC,
SELECT,
nSELECT,
HLTA
REQA,
WUPA,
nAC,
nSELECT,
HLTA,
error
REQA,
WUPA,
nAC,
nSELECT,
HLTA,
error
REQA,
WUPA,
AC,
SELECT,
nSELECT,
error
00 10
AC
aaa-001826PN512 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 4.5 — 17 December 2013
111345 105 of 136
NXP Semiconductors PN512
Full NFC Forum compliant solution
MIFARE (Card Operation mode):
The MIFARE anticollision is finished and the command has automatically changed to
transceive. The FIFO contains the first command after the Select. The bit TargetActivated
in the Status2Reg register is set to logic 1.
Felica (Card Operation mode):
The FeliCa polling command is finished and the command has automatically changed to
transceive. The FIFO contains the first command followed after the Poling by the FeliCa
protocol. The bit TargetActivated in the Status2Reg register is set to logic 1.
19.3.1.10 MFAuthent
This command manages MIFARE authentication to enable a secure communication to
any MIFARE Mini, MIFARE 1K and MIFARE 4K card. The following data is written to the
FIFO buffer before the command can be activated:
• Authentication command code (60h, 61h)
• Block address
• Sector key byte 0
• Sector key byte 1
• Sector key byte 2
• Sector key byte 3
• Sector key byte 4
• Sector key byte 5
• Card serial number byte 0
• Card serial number byte 1
• Card serial number byte 2
• Card serial number byte 3
In total 12 bytes are written to the FIFO.
Remark: When the MFAuthent command is active all access to the FIFO buffer is
blocked. However, if there is access to the FIFO buffer, the ErrorReg register’s WrErr bit is
set.
This command automatically terminates when the MIFARE card is authenticated and the
Status2Reg register’s MFCrypto1On bit is set to logic 1.
This command does not terminate automatically if the card does not answer, so the timer
must be initialized to automatic mode. In this case, in addition to the IdleIRq bit, the
TimerIRq bit can be used as the termination criteria. During authentication processing, the
RxIRq bit and TxIRq bit are blocked. The Crypto1On bit is only valid after termination of
the MFAuthent command, either after processing the protocol or writing Idle to the
CommandReg register.
If an error occurs during authentication, the ErrorReg register’s ProtocolErr bit is set to
logic 1 and the Status2Reg register’s Crypto1On bit is set to logic 0.PN512 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 4.5 — 17 December 2013
111345 106 of 136
NXP Semiconductors PN512
Full NFC Forum compliant solution
19.3.1.11 SoftReset
This command performs a reset of the device. The configuration data of the internal buffer
remains unchanged. All registers are set to the reset values. This command automatically
terminates when finished.
Remark: The SerialSpeedReg register is reset and therefore the serial data rate is set to
9.6 kBd.PN512 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 4.5 — 17 December 2013
111345 107 of 136
NXP Semiconductors PN512
Full NFC Forum compliant solution
20. Testsignals
20.1 Selftest
The PN512 has the capability to perform a digital selftest. To start the selftest the following
procedure has to be performed:
1. Perform a soft reset.
2. Clear the internal buffer by writing 25 bytes of 00h and perform the Config Command.
3. Enable the Selftest by writing the value 09h to the register AutoTestReg.
4. Write 00h to the FIFO.
5. Start the Selftest with the CalcCRC Command.
6. The Selftest will be performed.
7. When the Selftest is finished, the FIFO contains the following bytes:
Version 1.0 has a different Selftest answer, explained in Section 21.
Correct answer for VersionReg equal to 82h:
00h, EBh, 66h, BAh, 57h, BFh, 23h, 95h, D0h, E3h, 0Dh, 3Dh, 27h, 89h, 5Ch, DEh,
9Dh, 3Bh, A7h, 00h, 21h, 5Bh, 89h, 82h, 51h, 3Ah, EBh, 02h, 0Ch, A5h, 00h,
49h, 7Ch, 84h, 4Dh, B3h, CCh, D2h, 1Bh, 81h, 5Dh, 48h, 76h, D5h, 71h, 61h,
21h, A9h, 86h, 96h, 83h, 38h, CFh, 9Dh, 5Bh, 6Dh, DCh, 15h, BAh, 3Eh, 7Dh,
95h, 3Bh, 2Fh
20.2 Testbus
The testbus is implemented for production test purposes. The following configuration can
be used to improve the design of a system using the PN512. The testbus allows to route
internal signals to the digital interface. The testbus signals are selected by accessing
TestBusSel in register TestSel2Reg.
Table 159. Testsignal routing (TestSel2Reg = 07h)
Pins D6 D5 D4 D3 D2 D1 D0
Testsignal sdata scoll svalid sover RCV_reset RFon,
filtered
Envelope
Table 160. Description of Testsignals
Pins Testsignal Description
D6 sdata shows the actual received data stream.
D5 scoll shows if in the actual bit a collision has been detected (106 kbit only)
D4 svalid shows if sdata and scoll are valid
D3 sover shows that the receiver has detected a stop condition
(ISO/IEC 14443A/ MIFARE mode only).
D2 RCV_reset shows if the receiver is reset
D1 RFon, filtered shows the value of the internal RF level detector
D0 Envelope shows the output of the internal coderPN512 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 4.5 — 17 December 2013
111345 108 of 136
NXP Semiconductors PN512
Full NFC Forum compliant solution
20.3 Testsignals at pin AUX
Table 161. Testsignal routing (TestSel2Reg = 0Dh)
Pins D6 D5 D4 D3 D2 D1 D0
Testsignal clkstable clk27/8 clk27rf/8 clkrf13rf/4 clk27 clk27rf clk13rf
Table 162. Description of Testsignals
Pins Testsignal Description
D6 clkstable shows if the oscillator delivers a stable signal.
D5 clk27/8 shows the output signal of the oscillator divided by 8
D4 clk27rf/8 shows the clk27rf signal divided by 8
D3 clkrf13/4 shows the clk13rf divided by 4.
D2 clk27 shows the output signal of the oscillator
D1 clk27rf shows the RF clock multiplied by 2.
D0 clk13rf shows the RF clock of 13.56 MHz
Table 163. Testsignal routing (TestSel2Reg = 19h)
Pins D6 D5 D4 D3 D2 D1 D0
Testsignal - TRunning - - - - -
Table 164. Description of Testsignals
Pins Testsignal Description
D6 - -
D5 TRunning TRunning stops 1 clockcycle after TimerIRQ is raised
D4 - -
D3 - -
D2 - -
D1 - -
D0 - -
Table 165. Testsignals description
SelAux Description for Aux1 / Aux2
0000 Tristate
0001 DAC: register TestDAC 1/2
0010 DAC: testsignal corr1
0011 DAC: testsignal corr2
0100 DAC: testsignal MinLevel
0101 DAC: ADC_I
0110 DAC: ADC_Q
0111 DAC: testsignal ADC_I combined with ADC_Q
1000 Testsignal for production test
1001 SAM clock
1010 High
1011 low
1100 TxActivePN512 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 4.5 — 17 December 2013
111345 109 of 136
NXP Semiconductors PN512
Full NFC Forum compliant solution
Each signal can be switched to pin AUX1 or AUX2 by setting SelAux1 or SelAux2 in the
register AnalogTestReg.
Note: The DAC has a current output, it is recommended to use a 1 k pull-down
resistance at pins AUX1/AUX2.
20.4 PRBS
Enables the PRBS9 or PRBS15 sequence according to ITU-TO150. To start the
transmission of the defined datastream the command send has to be activated. The
preamble/Sync byte/start bit/parity bit are generated automatically depending on the
selected mode.
Note: All relevant register to transmit data have to be configured before entering PRBS
mode according ITU-TO150.
21. Errata sheet
This data sheet is describing the functionality for version 2.0 and the industrial version.
This chapter lists all differences from version 1.0 to version 2.0:
The value of the version in Section 9.2.4.8 is set to80h.
The behaviour ‘RFU’ for the register is undefined.
The answer to the Selftest (see Section 20.1) for version 1.0 (VersionReg equal to 80h):
00h, AAh, E3h, 29h, 0Ch, 10h, 29zhh, 6Bh,
76h, 8Dh, AFh, 4Bh, A2h, DAh, 76h, 99h
C7h, 5Eh, 24h, 69h, D2h, BAh, FAh, BCh
3Eh, DAh, 96h, B5h, F5h, 94h, B0h, 3Ah
4Eh, C3h, 9Dh, 94h, 76h, 4Ch, EAh, 5Eh
38h, 10h, 8Fh, 2Dh, 21h, 4Bh, 52h, BFh
4Eh, C3h, 9Dh, 94h, 76h, 4Ch, EAh, 5Eh
38h, 10h, 8Fh, 2Dh, 21h, 4Bh, 52h, BFh
FBh, F4h, 19h, 94h, 82h, 5Ah, 72h, 9Dh
BAh, 0Dh, 1Fh, 17h, 56h, 22h, B9h, 08h
Only the default setting for the prescaler (see Section 15 “Timer unit” on page 96): t =
((TPreScaler*2+1)*TReload+1)/13,56 MHz is supported. As such only the formula fTimer =
13,56 MHz/(2*PreScaler+1) is applicable for the TPrescalerHigh in Table 100 “Description
of TModeReg bits” on page 57 and TPrescalerLo in Table 101 “TPrescalerReg register
(address 2Bh); reset value: 00h, 00000000b” on page 58. As there is no option for the
prescaler available, also the TPrescalEven is not available Section 9.2.2.10 on page 45.
This bit is set to ‘RFU’.
1101 RxActive
1110 Subcarrier detected
1111 TstBusBit
Table 165. Testsignals description
SelAux Description for Aux1 / Aux2PN512 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 4.5 — 17 December 2013
111345 110 of 136
NXP Semiconductors PN512
Full NFC Forum compliant solution
Especially when using time slot protocols, it is needed that the error flag is copied into the
status information of the frame. When using the RxMultiple feature (see Section 9.2.2.4
on page 39) within version 1.0 the protocol error flag is not included in the status
information for the frame. In addition the CRCOk is copied instead of the CRCErr. This
can be a problem in frames without length information e.g. ISO/IEC 14443-B.
The version 1.0 does not accept a Type B EOF if there is no 1 bit after the series of 0 bits,
as such the configuration within Section 9.2.2.15 “TypeBReg” on page 50 bit 4 for
RxEOFReq does not exist. In addition the IC only has the possibility to select the
minimum or maximum timings for SOF/EOF generation defined in ISO/IEC14443B. As
such the configuration possible in version 2.0 through the EOFSOFAdjust bit (see Section
9.2.4.7 “AutoTestReg” on page 64) does not exist and the configuration is limited to only
setting minimum and maximum length according ISO/IEC 14443-B, see Section 9.2.2.15
“TypeBReg” on page 50, bit 4.
22. Application design-in information
The figure below shows a typical circuit diagram, using a complementary antenna
connection to the PN512.
The antenna tuning and RF part matching is described in the application note “NFC
Transmission Module Antenna and RF Design Guide”.
Fig 38. Typical circuit diagram
AVDD TVDD
RX
VMID
supply
TX1
TVSS
TX2
DVSS
DVDD
DVDD
PVDD
SVDD
AVSS
IRQ
NRSTPD
R1
R2
L0
C0
C0
C2
C1
CRX
RQ
C1 RQ
C2
L0
Cvmid
001aan232
27.12 MHz
OSCIN OSCOUT
HOST
CONTROLLER
interface
PN512
antenna
LantPN512 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 4.5 — 17 December 2013
111345 111 of 136
NXP Semiconductors PN512
Full NFC Forum compliant solution
23. Limiting values
24. Recommended operating conditions
Table 166. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VDDA analog supply voltage 0.5 +4.0 V
VDDD digital supply voltage 0.5 +4.0 V
VDD(PVDD) PVDD supply voltage 0.5 +4.0 V
VDD(TVDD) TVDD supply voltage 0.5 +4.0 V
VDD(SVDD) SVDD supply voltage 0.5 +4.0 V
VI input voltage all input pins except pins SIGIN and
RX
VSS(PVSS) 0.5 VDD(PVDD) + 0.5 V
pin MFIN VSS(PVSS) 0.5 VDD(SVDD) + 0.5 V
Ptot total power dissipation per package; and VDDD in shortcut
mode
- 200 mW
Tj junction temperature - 125 C
VESD electrostatic discharge
voltage
HBM; 1500 , 100 pF;
JESD22-A114-B
- 2000 V
MM; 0.75 H, 200 pF;
JESD22-A114-A
- 200 V
Charged device model;
JESD22-C101-A
on all pins - 200 V
on all pins except SVDD in
TFBGA64 package
- 500 V
Industrial version:
VESD electrostatic discharge
voltage
HBM; 1500 , 100 pF;
JESD22-A114-B
- 2000 V
MM; 0.75 H, 200 pF;
JESD22-A114-A
- 200 V
Charged device model;
AEC-Q100-011
on all pins - 200 V
on all pins except SVDD - 500 V
Table 167. Operating conditions
Symbol Parameter Conditions Min Typ Max Unit
VDDA analog supply voltage VDD(PVDD) VDDA = VDDD = VDD(TVDD);
VSSA = VSSD = VSS(PVSS) = VSS(TVSS) =0V
[1][2] 2.5 - 3.6 V
VDDD digital supply voltage VDD(PVDD) VDDA = VDDD = VDD(TVDD);
VSSA = VSSD = VSS(PVSS) = VSS(TVSS) =0V
[1][2] 2.5 - 3.6 V
VDD(TVDD) TVDD supply voltage VDD(PVDD) VDDA = VDDD = VDD(TVDD);
VSSA = VSSD = VSS(PVSS) = VSS(TVSS) =0V
[1][2] 2.5 - 3.6 VPN512 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 4.5 — 17 December 2013
111345 112 of 136
NXP Semiconductors PN512
Full NFC Forum compliant solution
[1] Supply voltages below 3 V reduce the performance (the achievable operating distance).
[2] VDDA, VDDD and VDD(TVDD) must always be the same voltage.
[3] VDD(PVDD) must always be the same or lower voltage than VDDD.
25. Thermal characteristics
26. Characteristics
VDD(PVDD) PVDD supply voltage VDD(PVDD) VDDA = VDDD = VDD(TVDD);
VSSA = VSSD = VSS(PVSS) = VSS(TVSS) =0V
[3] 1.6 - 3.6 V
VDD(SVDD) SVDD supply voltage VSSA = VSSD = VSS(PVSS) = VSS(TVSS) =0V 1.6 - 3.6 V
Tamb ambient temperature HVQFN32, HVQFN40, TFBGA64 30 - +85 C
Industrial version:
Tamb ambient temperature HVQFN32 40 - +90 C
Table 167. Operating conditions …continued
Symbol Parameter Conditions Min Typ Max Unit
Table 168. Thermal characteristics
Symbol Parameter Conditions Package Typ Unit
Rthj-a Thermal resistance from
junction to ambient
In still air with exposed pad
soldered on a 4 layer Jedec PCB
In still air
HVQFN32 40 K/W
HVQFN40 35 K/W
TFBGA64 K/W
Table 169. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
Input characteristics
Pins A0, A1 and NRSTPD
ILI input leakage current 1 - +1 A
VIH HIGH-level input voltage 0.7VDD(PVDD) -- V
VIL LOW-level input voltage - - 0.3VDD(PVDD) V
Pin SIGIN
ILI input leakage current 1 - +1 A
VIH HIGH-level input voltage 0.7VDD(SVDD) -- V
VIL LOW-level input voltage - - 0.3VDD(SVDD) V
Pin ALE
ILI input leakage current 1 - +1 A
VIH HIGH-level input voltage 0.7VDD(PVDD) -- V
VIL LOW-level input voltage - - 0.3VDD(PVDD) V
Pin RX[1]
Vi input voltage 1 -VDDA +1 V
Ci input capacitance VDDA = 3 V; receiver active;
VRX(p-p) = 1 V; 1.5 V (DC)
offset
- 10- pFPN512 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 4.5 — 17 December 2013
111345 113 of 136
NXP Semiconductors PN512
Full NFC Forum compliant solution
Ri input resistance VDDA = 3 V; receiver active;
VRX(p-p) = 1 V; 1.5 V (DC)
offset
- 350 -
Input voltage range; see Figure 39
Vi(p-p)(min) minimum peak-to-peak input
voltage
Manchester encoded;
VDDA =3V
- 100 - mV
Vi(p-p)(max) maximum peak-to-peak input
voltage
Manchester encoded;
VDDA =3V
- 4- V
Input sensitivity; see Figure 39
Vmod modulation voltage minimum Manchester
encoded; VDDA = 3 V;
RxGain[2:0] = 111b (48 dB)
- 5 - mV
Pin OSCIN
ILI input leakage current 1 - +1 A
VIH HIGH-level input voltage 0.7VDDA -- V
VIL LOW-level input voltage - - 0.3VDDA V
Ci input capacitance VDDA = 2.8 V; DC = 0.65 V;
AC = 1 V (p-p)
- 2 - pF
Input/output characteristics
pins D1, D2, D3, D4, D5, D6 and D7
ILI input leakage current 1 - +1 A
VIH HIGH-level input voltage 0.7VDD(PVDD) -- V
VIL LOW-level input voltage - - 0.3VDD(PVDD) V
VOH HIGH-level output voltage VDD(PVDD) = 3 V; IO = 4 mA VDD(PVDD)
0.4
- VDD(PVDD) V
VOL LOW-level output voltage VDD(PVDD) = 3 V; IO = 4 mA VSS(PVSS) - VSS(PVSS) +
0.4
V
IOH HIGH-level output current VDD(PVDD) =3V - - 4 mA
IOL LOW-level output current VDD(PVDD) =3V - - 4 mA
Output characteristics
Pin SIGOUT
VOH HIGH-level output voltage VDD(SVDD) = 3 V; IO = 4 mA VDD(SVDD)
0.4
- VDD(SVDD) V
VOL LOW-level output voltage VDD(SVDD) = 3 V; IO = 4 mA VSS(PVSS) - VSS(PVSS) +
0.4
V
IOL LOW-level output current VDD(SVDD) =3V - - 4 mA
IOH HIGH-level output current VDD(SVDD) =3V - - 4 mA
Pin IRQ
VOH HIGH-level output voltage VDD(PVDD) = 3 V; IO = 4 mA VDD(PVDD)
0.4
- VDD(PVDD) V
VOL LOW-level output voltage VDD(PVDD) = 3 V; IO = 4 mA VSS(PVSS) - VSS(PVSS) +
0.4
V
IOL LOW-level output current VDD(PVDD) =3V - - 4 mA
IOH HIGH-level output current VDD(PVDD) =3V - - 4 mA
Table 169. Characteristics …continued
Symbol Parameter Conditions Min Typ Max UnitPN512 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 4.5 — 17 December 2013
111345 114 of 136
NXP Semiconductors PN512
Full NFC Forum compliant solution
Pins AUX1 and AUX2
VOH HIGH-level output voltage VDDD = 3 V; IO = 4 mA VDDD 0.4 - VDDD V
VOL LOW-level output voltage VDDD = 3 V; IO = 4 mA VSS(PVSS) - VSS(PVSS) +
0.4
V
IOL LOW-level output current VDDD =3V - - 4 mA
IOH HIGH-level output current VDDD =3V - - 4 mA
Pins TX1 and TX2
VOL LOW-level output voltage VDD(TVDD) = 3 V;
IDD(TVDD) = 32 mA;
CWGsP[5:0] = 0Fh
- - 0.15 V
VDD(TVDD) = 3 V;
IDD(TVDD) = 80 mA;
CWGsP[5:0] = 0Fh
- - 0.4 V
VDD(TVDD) = 2.5 V;
IDD(TVDD) = 32 mA;
CWGsP[5:0] = 0Fh
- - 0.24 V
VDD(TVDD) = 2.5 V;
IDD(TVDD) = 80 mA;
CWGsP[5:0] = 0Fh
- - 0.64 V
VOH HIGH-level output voltage VDD(TVDD) = 3 V;
IDD(TVDD) = 32 mA;
CWGsP[5:0] = 3Fh
VDD(TVDD)
0.15
-- V
VDD(TVDD) = 3 V;
IDD(TVDD) = 80 mA;
CWGsP[5:0] = 3Fh
VDD(TVDD)
0.4
-- V
VDD(TVDD) = 2.5 V;
IDD(TVDD) = 32 mA;
CWGsP[5:0] = 3Fh
VDD(TVDD)
0.24
-- V
VDD(TVDD) = 2.5 V;
IDD(TVDD) = 80 mA;
CWGsP[5:0] = 3Fh
VDD(TVDD)
0.64
-- V
Industrial version:
VOL LOW-level output voltage VDD(TVDD) = 2.5 V;
IDD(TVDD) = 32 mA;
CWGsP[5:0] = 3Fh
- - 0.18 V
VDD(TVDD) = 2.5 V;
IDD(TVDD) = 80 mA;
CWGsP[5:0] = 3Fh
- -0.44 V
VOH HIGH-level output voltage VDD(TVDD) = 3 V;
IDD(TVDD) = 32 mA;
CWGsP[5:0] = 3Fh
VDD(TVDD)
0.18
-- V
VDD(TVDD) = 3 V;
IDD(TVDD) = 80 mA;
CWGsP[5:0] = 3Fh
VDD(TVDD)
0.44
-- V
Output resistance for TX1/TX2,
Industrial Version:
ROP,01H High level output resistance TVDD = 3 V, VTX = TVDD -
100 mV, CWGsP = 01h
123 180 261
Table 169. Characteristics …continued
Symbol Parameter Conditions Min Typ Max UnitPN512 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 4.5 — 17 December 2013
111345 115 of 136
NXP Semiconductors PN512
Full NFC Forum compliant solution
ROP,02H High level output resistance TVDD = 3 V, VTX = TVDD -
100 mV, CWGsP = 02h
61 90 131
ROP,04H High level output resistance TVDD = 3 V, VTX = TVDD -
100 mV, CWGsP = 04h
30 46 68
ROP,08H High level output resistance TVDD = 3 V, VTX = TVDD -
100 mV, CWGsP = 08h
15 23 35
ROP,10H High level output resistance TVDD = 3 V, VTX = TVDD -
100 mV, CWGsP = 10h
7.5 12 19
ROP,20H High level output resistance TVDD = 3 V, VTX = TVDD -
100 mV, CWGsP = 20h
4.2 6 9
ROP,3FH High level output resistance TVDD = 3 V, VTX = TVDD -
100 mV, CWGsP = 3Fh
2 35
RON,10H Low level output resistance TVDD = 3 V, VTX = TVDD -
100 mV, CWGsN = 10h
30 46 68
RON,20H Low level output resistance TVDD = 3 V, VTX = TVDD -
100 mV, CWGsN = 20h
15 23 35
RON,40H Low level output resistance TVDD = 3 V, VTX = TVDD -
100 mV, CWGsN = 40h
7.5 12 19
RON,80H Low level output resistance TVDD = 3 V, VTX = TVDD -
100 mV, CWGsN = 80h
4.2 6 9
RON,F0H Low level output resistance TVDD = 3 V, VTX = TVDD -
100 mV, CWGsN = F0h
2 35
Current consumption
Ipd power-down current VDDA = VDDD = VDD(TVDD) =
VDD(PVDD) =3V
hard power-down; pin
NRSTPD set LOW
[2] - -5 A
soft power-down; RF
level detector on
[2] - -10 A
IDD(PVDD) PVDD supply current pin PVDD [3] - -40 mA
IDD(TVDD) TVDD supply current pin TVDD; continuous wave [4][5][6] - 60 100 mA
IDD(SVDD) SVDD supply current pin SVDD [7] - -4 mA
IDDD digital supply current pin DVDD; VDDD =3V - 6.5 9 mA
IDDA analog supply current pin AVDD; VDDA = 3 V,
CommandReg register’s
RcvOff bit = 0
- 7 10 mA
pin AVDD; receiver
switched off; VDDA = 3 V,
CommandReg register’s
RcvOff bit = 1
- 3 5 mA
Industrial version:
IDDD digital supply current pin DVDD; VDDD =3V - 6.5 9,5 mA
Table 169. Characteristics …continued
Symbol Parameter Conditions Min Typ Max UnitPN512 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 4.5 — 17 December 2013
111345 116 of 136
NXP Semiconductors PN512
Full NFC Forum compliant solution
[1] The voltage on pin RX is clamped by internal diodes to pins AVSS and AVDD.
[2] Ipd is the total current for all supplies.
[3] IDD(PVDD) depends on the overall load at the digital pins.
[4] IDD(TVDD) depends on VDD(TVDD) and the external circuit connected to pins TX1 and TX2.
[5] During typical circuit operation, the overall current is below 100 mA.
[6] Typical value using a complementary driver configuration and an antenna matched to 40 between pins TX1 and TX2 at 13.56 MHz.
[7] IDD(SVDD) depends on the load at pin MFOUT.
Ipd power-down current VDDA = VDDD = VDD(TVDD) =
VDD(PVDD) =3V
hard power-down; pin
NRSTPD set LOW
[2] - -15 A
soft power-down; RF
level detector on
[2] - -30 A
Clock frequency
fclk clock frequency - 27.12 - MHz
clk clock duty cycle 40 50 60 %
tjit jitter time RMS - - 10 ps
Crystal oscillator
VOH HIGH-level output voltage pin OSCOUT - 1.1 - V
VOL LOW-level output voltage pin OSCOUT - 0.2 - V
Ci input capacitance pin OSCOUT - 2 - pF
pin OSCIN - 2 - pF
Typical input requirements
fxtal crystal frequency - 27.12 - MHz
ESR equivalent series resistance - - 100
CL load capacitance - 10 - pF
Pxtal crystal power dissipation - 50 100 W
Table 169. Characteristics …continued
Symbol Parameter Conditions Min Typ Max UnitPN512 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 4.5 — 17 December 2013
111345 117 of 136
NXP Semiconductors PN512
Full NFC Forum compliant solution
26.1 Timing characteristics
Fig 39. Pin RX input voltage range
001aak012
VMID
0 V
Vmod
Vi(p-p)(max) Vi(p-p)(min)
13.56 MHz
carrier
Table 170. SPI timing characteristics
Symbol Parameter Conditions Min Typ Max Unit
tWL pulse width LOW line SCK 50 - - ns
tWH pulse width HIGH line SCK 50 - - ns
th(SCKH-D) SCK HIGH to data input
hold time
SCK to changing
MOSI
25 - - ns
tsu(D-SCKH) data input to SCK HIGH
set-up time
changing MOSI to
SCK
25 - - ns
th(SCKL-Q) SCK LOW to data output
hold time
SCK to changing
MISO
- - 25 ns
t(SCKL-NSSH) SCK LOW to NSS HIGH
time
0 - - ns
Table 171. I2C-bus timing in Fast mode
Symbol Parameter Conditions Fast mode High-speed
mode
Unit
Min Max Min Max
fSCL SCL clock frequency 0 400 0 3400 kHz
tHD;STA hold time (repeated) START
condition
after this period,
the first clock pulse
is generated
600 - 160 - ns
tSU;STA set-up time for a repeated
START condition
600 - 160 - ns
tSU;STO set-up time for STOP condition 600 - 160 - ns
tLOW LOW period of the SCL clock 1300 - 160 - ns
tHIGH HIGH period of the SCL clock 600 - 60 - ns
tHD;DAT data hold time 0 900 0 70 nsPN512 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 4.5 — 17 December 2013
111345 118 of 136
NXP Semiconductors PN512
Full NFC Forum compliant solution
tSU;DAT data set-up time 100 - 10 - ns
tr rise time SCL signal 20 300 10 40 ns
tf fall time SCL signal 20 300 10 40 ns
tr rise time SDA and SCL
signals
20 300 10 80 ns
tf fall time SDA and SCL
signals
20 300 10 80 ns
tBUF bus free time between a STOP
and START condition
1.3 - 1.3 - s
Remark: The signal NSS must be LOW to be able to send several bytes in one data stream.
To send more than one data stream NSS must be set HIGH between the data streams.
Fig 40. Timing diagram for SPI
Fig 41. Timing for Fast and Standard mode devices on the I2C-bus
Table 171. I2C-bus timing in Fast mode …continued
Symbol Parameter Conditions Fast mode High-speed
mode
Unit
Min Max Min Max
001aaj634
tSCKL tSCKH tSCKL
tDXSH tSHDX tDXSH
tSLDX
tSLNH
MOSI
SCK
MISO
MSB
MSB
LSB
LSB
NSS
001aaj635
SDA
tf
SCL
tLOW tf
tSP tr
tHD;STA
tHD;DAT
tHD;STA
tr tHIGH
tSU;DAT
S Sr P S
tSU;STA
tSU;STO
tBUFPN512 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 4.5 — 17 December 2013
111345 119 of 136
NXP Semiconductors PN512
Full NFC Forum compliant solution
26.2 8-bit parallel interface timing
26.2.1 AC symbols
Each timing symbol has five characters. The first character is always 't' for time. The other
characters indicate the name of a signal or the logic state of that signal (depending on
position):
Example: tAVLL = time for address valid to ALE low
26.2.2 AC operating specification
26.2.2.1 Bus timing for separated Read/Write strobe
Table 172. AC symbols
Designation Signal Designation Logic Level
A address H HIGH
D data L LOW
W NWR or nWait Z high impedance
R NRD or R/NW or nWrite X any level or data
L ALE or AS V any valid signal or data
C NCS N NSS
S NDS or nDStrb and nAStrb, SCK
Table 173. Timing specification for separated Read/Write strobe
Symbol Parameter Min Max Unit
tLHLL ALE pulse width 10 - ns
tAVLL Multiplexed Address Bus valid to ALE low (Address Set Up Time) 5 - ns
tLLAX Multiplexed Address Bus valid after ALE low (Address Hold Time) 5 - ns
tLLWL ALE low to NWR, NRD low 10 - ns
tCLWL NCS low to NRD, NWR low 0 - ns
tWHCH NRD, NWR high to NCS high 0 - ns
tRLDV NRD low to DATA valid - 35 ns
tRHDZ NRD high to DATA high impedance - 10 ns
tDVWH DATA valid to NWR high 5 - ns
tWHDX DATA hold after NWR high (Data Hold Time) 5 - ns
tWLWH NRD, NWR pulse width 40 - ns
tAVWL Separated Address Bus valid to NRD, NWR low (Set Up Time) 30 - ns
tWHAX Separated Address Bus valid after NWR high (Hold Time) 5 - ns
tWHWL period between sequenced read/write accesses 40 - nsPN512 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 4.5 — 17 December 2013
111345 120 of 136
NXP Semiconductors PN512
Full NFC Forum compliant solution
Remark: For separated address and data bus the signal ALE is not relevant and the
multiplexed addresses on the data bus don’t care.
For the multiplexed address and data bus the address lines A0 to A3 have to be
connected as described in chapter Automatic host controller Interface Type Detection.
26.2.2.2 Bus timing for common Read/Write strobe
Fig 42. Timing diagram for separated Read/Write strobe
001aan233
tLHLL
tCLWL
tLLWL
tWHWL tWLWH tWHWL
tWHDX
tRHDZ
tWLDV
tRLDV
tWHCH
tWHAX
tAVLL tLLAX
tAVWL
ALE
NCS
NWR
NRD
D0...D7 D0...D7
A0...A3
multiplexed
addressbus
A0...A3
SEPARATED ADDRESSBUS A0...A3
Table 174. Timing specification for common Read/Write strobe
Symbol Parameter Min Max Unit
tLHLL AS pulse width 10 - ns
tAVLL Multiplexed Address Bus valid to AS low (Address Set Up Time) 5 - ns
tLLAX Multiplexed Address Bus valid after AS low (Address Hold Time) 5 - ns
tLLSL AS low to NDS low 10 - ns
tCLSL NCS low to NDS low 0 - ns
tSHCH NDS high to NCS high 0 - ns
tSLDV,R NDS low to DATA valid (for read cycle) - 35 ns
tSHDZ NDS low to DATA high impedance (read cycle) - 10 ns
tDVSH DATA valid to NDS high (for write cycle) 5 - ns
tSHDX DATA hold after NDS high (write cycle, Hold Time) 5 - ns
tSHRX R/NW hold after NDS high 5 - ns
tSLSH NDS pulse width 40 - ns
tAVSL Separated Address Bus valid to NDS low (Hold Time) 30 - ns
tSHAX Separated Address Bus valid after NDS high (Set Up Time) 5 - nsPN512 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 4.5 — 17 December 2013
111345 121 of 136
NXP Semiconductors PN512
Full NFC Forum compliant solution
Remark: For separated address and data bus the signal ALE is not relevant and the
multiplexed addresses on the data bus don’t care. For the multiplexed address and data
bus the address lines A0 to A3 have to be connected as described in Automatic
-Controller Interface Type Detection.
Fig 43. Timing diagram for common Read/Write strobe
SEPARATED ADDRESSBUS A0...A3
multiplexed
addressbus
A0...A3
ALE
tLHLL
tCLSL
R/NW
NDS
D0...D7 D0...D7
A0...A3
NCS
tSHCH
tSHRX tRVSL
tLLSL
tSLSH tSHSL
tAVLL
tLLAX
tSLDV, R
tSLDV, W tSHDX
tSHDZ
tSHAX tAVSL
tSHSL
001aan234PN512 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 4.5 — 17 December 2013
111345 122 of 136
NXP Semiconductors PN512
Full NFC Forum compliant solution
27. Package information
The PN512 can be delivered in 3 different packages.
Table 175. Package information
Package Remarks
HVQFN32 8-bit parallel interface not supported
HVQFN40 Supports the 8-bit parallel interface
TFBGA64 Ball grid array facilitating development of an PCI compliant devicePN512 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 4.5 — 17 December 2013
111345 123 of 136
NXP Semiconductors PN512
Full NFC Forum compliant solution
28. Package outline
Fig 44. Package outline package version (HVQFN32)
1 0.5
UNIT A1 b Eh e y
0.2
c
OUTLINE REFERENCES
VERSION
EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC JEITA
mm 5.1
4.9
Dh
3.25
2.95
y1
5.1
4.9
3.25
2.95
e1
3.5
e2
3.5 0.30
0.18
0.05
0.00 0.05 0.1
DIMENSIONS (mm are the original dimensions)
SOT617-1 MO-220 - - - - - -
0.5
0.3
L
0.1
v
0.05
w
0 2.5 5 mm
scale
SOT617-1
HVQFN32: plastic thermal enhanced very thin quad flat package; no leads;
32 terminals; body 5 x 5 x 0.85 mm
A(1)
max.
A
A1
c
detail X
y y e 1 C
L
Eh
Dh
e
e1
b
9 16
32 25
24
17
8
1
X
D
E
C
B A
e2
terminal 1
index area
terminal 1
index area
01-08-08
02-10-18
1/2 e
1/2 e AC
C
v M B
w M
E(1)
Note
1. Plastic or metal protrusions of 0.075 mm maximum per side are not included.
D(1)PN512 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 4.5 — 17 December 2013
111345 124 of 136
NXP Semiconductors PN512
Full NFC Forum compliant solution
Fig 45. Package outline package version (HVQFN40)
Outline References
version
European
projection Issue date
IEC JEDEC JEITA
SOT618-1 MO-220
sot618-1_po
02-10-22
13-11-05
Unit
mm
max
nom
min
1.00 0.05 0.2 6.1 4.25 6.1
0.4
A(1)
Dimensions (mm are the original dimensions)
Note
1. Plastic or metal protrusions of 0.075 mm maximum per side are not included.
HVQFN40: plastic thermal enhanced very thin quad flat package; no leads;
40 terminals; body 6 x 6 x 0.85 mm SOT618-1
A1 b
0.30
c D(1) Dh E(1) Eh
4.10
e e1 e2 Lvw
0.05
y
0.05
y1
0.1
0.85 0.02 6.0 4.10 6.0 0.21
0.80 0.00 0.18 5.9 3.95 5.9 3.95 0.3
4.25 0.5 4.5 0.5 4.5 0.1
e
e
1/2 e
1/2 e
y
terminal 1
index area
A A1
c
L
Eh
Dh
b
11 20
40 31
30
21 10
1
D
E
terminal 1
index area
0 2.5 5 mm
scale
e1
AC
C
v B
w y1 C
C
e2
X
detail X
B APN512 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 4.5 — 17 December 2013
111345 125 of 136
NXP Semiconductors PN512
Full NFC Forum compliant solution
Fig 46. Package outline package version (TFBGA64)
Outline References
version
European
projection Issue date
IEC JEDEC JEITA
SOT1336-1 - - -
sot1336-1_po
12-06-19
12-08-28
Unit
mm
max
nom
min
1.15 0.35 0.45 5.6 5.6
4.55 0.15 0.1
A
Dimensions (mm are the original dimensions)
TFBGA64: plastic thin fine-pitch ball grid array package; 64 balls
A1 A2
0.80
1.00 0.30 0.40 5.5 5.5 0.65 0.70
b DE ee1
4.55
0.90 0.25 0.35 5.4 5.4 0.65
e2 v w
0.08
y y1
0.1
SOT1336-1
C
y1 C y
0 5 mm
scale
X
A
A2
A1
detail X
ball A1
index area
ball A1
index area
A
E
D B
e2
e
A
B
C
D
E
F
G
H
1 3 5 78 246
e1
e Ø v AC B
Ø w C b
1/2 e
1/2 ePN512 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 4.5 — 17 December 2013
111345 126 of 136
NXP Semiconductors PN512
Full NFC Forum compliant solution
29. Abbreviations
30. Glossary
Modulation index — Defined as the voltage ratio (Vmax Vmin) / (Vmax + Vmin).
Load modulation index — Defined as the voltage ratio for the card
(Vmax Vmin) / (Vmax + Vmin) measured at the card’s coil.
Initiator — Generates RF field at 13.56 MHz and starts the NFCIP-1 communication.
Target — Responds to command either using load modulation scheme (RF field
generated by Initiator) or using modulation of self generated RF field (no RF field
generated by initiator).
31. References
[1] Application note — NFC Transmission Module Antenna and RF Design Guide
Table 176. Abbreviations
Acronym Description
ADC Analog-to-Digital Converter
ASK Amplitude Shift keying
BPSK Binary Phase Shift Keying
CRC Cyclic Redundancy Check
CW Continuous Wave
DAC Digital-to-Analog Converter
EOF End of frame
HBM Human Body Model
I
2C Inter-integrated Circuit
LSB Least Significant Bit
MISO Master In Slave Out
MM Machine Model
MOSI Master Out Slave In
MSB Most Significant Bit
NSS Not Slave Select
PCB Printed-Circuit Board
PLL Phase-Locked Loop
PRBS Pseudo-Random Bit Sequence
RX Receiver
SOF Start Of Frame
SPI Serial Peripheral Interface
TX Transmitter
UART Universal Asynchronous Receiver TransmitterPN512 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 4.5 — 17 December 2013
111345 127 of 136
NXP Semiconductors PN512
Full NFC Forum compliant solution
32. Revision history
Table 177. Revision history
Document ID Release date Data sheet status Change notice Supersedes
PN512 v.4.5 20131217 Product data sheet - PN512 v.4.4
Modifications: • Typo corrected
PN512 v.4.4 20130730 Product data sheet - PN512 v.4.3
Modifications: • Value added in Table 166 “Limiting values”
• Change of descriptive title
PN512 v.4.3 20130507 Product data sheet - PN512 v.4.2
Modifications: • New type PN5120A0ET/C2 added
• Table 72 “Description of MifNFCReg bits”: description of TxWait updated
• Table 153 “Register and bit settings controlling the signal on pin TX1” and Table 153 “Register
and bit settings controlling the signal on pin TX1”: updated
• Table 166 “Limiting values”: VESD values added
PN512 v.4.2 20120828 Product data sheet - PN512 v.4.1
Modifications: • Table 123 “AutoTestReg register (address 36h); reset value: 40h, 01000000b”: description of
bits 4 and 5 corrected
PN512 v.4.1 20120821 Product data sheet - PN512 v.4.0
Modifications: • Table 124 “Description of bits”: description of bits 4 and 5 corrected
PN512 v.4.0 20120712 Product data sheet - PN512 v.3.9
Modifications: • Section 33.4 “Licenses”: updated
PN512 v.3.9 20120201 Product data sheet - PN512 v.3.8
Modifications: • Adding information on the different version in General description.
• Adding Section 21 “Errata sheet” on page 109 for explanation of differences between 1.0 and
2.0.
• Adding ordering information for version 1.0 and industrial version in Table 2 “Ordering
information” on page 5
• Adding the limitations and characteristics for the industrial version, see Table 1 “Quick
reference data” on page 4, Table 166 “Limiting values” on page 111, Table 1 “Quick reference
data” on page 4
• Referring to the Section 21 “Errata sheet” on page 109 within the following sections: Section
9.2.2.4 “RxModeReg” on page 39, Section 9.2.2.10 “DemodReg” on page 45, Section 9.2.2.15
“TypeBReg” on page 50, Section 9.2.3.10 “TMode Register, TPrescaler Register” on page 57,
Section 9.2.4.7 “AutoTestReg” on page 64, Section 9.2.4.8 “VersionReg” on page 64, Section
9.1.1 “Register bit behavior” on page 23, Section 15 “Timer unit” on page 96, Section 20
“Testsignals” on page 107;
• Update of command ‘Mem’ to ‘Configure’ and ‘RFU’ to ‘Autocoll’ in Table 158 “Command
overview” on page 101.
• Change of ‘Mem’ to ‘Configure’ in ‘Mem’ in Section 19.3.1.2 “Config command” on page 101
• Adding Autocoll in Section 19.3.1.9 “AutoColl” on page 103
PN512 v.3.8 20111025 Product data sheet - PN512 v.3.7
Modifications: • Table 168 “Characteristics”: unit of Pxtal corrected
111310 June 2005 Objective data sheet -
Modifications: • Initial versionPN512 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 4.5 — 17 December 2013
111345 128 of 136
NXP Semiconductors PN512
Full NFC Forum compliant solution
33. Legal information
33.1 Data sheet status
[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
33.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to offer functions and qualities beyond those described in the
Product data sheet.
33.3 Disclaimers
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information. NXP Semiconductors takes no
responsibility for the content in this document if provided by an information
source outside of NXP Semiconductors.
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors and its suppliers accept no liability for
inclusion and/or use of NXP Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at the customer’s own
risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and operation of their applications
and products using NXP Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or customer product
design. It is customer’s sole responsibility to determine whether the NXP
Semiconductors product is suitable and fit for the customer’s applications and
products planned, as well as for the planned application and use of
customer’s third party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks associated with their
applications and products.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
third party customer(s). Customer is responsible for doing all necessary
testing for the customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications and
the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Document status[1][2] Product status[3] Definition
Objective [short] data sheet Development This document contains data from the objective specification for product development.
Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.
Product [short] data sheet Production This document contains the product specification. PN512 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 4.5 — 17 December 2013
111345 129 of 136
NXP Semiconductors PN512
Full NFC Forum compliant solution
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Non-automotive qualified products — Unless this data sheet expressly
states that this specific NXP Semiconductors product is automotive qualified,
the product is not suitable for automotive use. It is neither qualified nor tested
in accordance with automotive testing or application requirements. NXP
Semiconductors accepts no liability for inclusion and/or use of
non-automotive qualified products in automotive equipment or applications.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards, customer
(a) shall use the product without NXP Semiconductors’ warranty of the
product for such automotive applications, use and specifications, and (b)
whenever customer uses the product for automotive applications beyond
NXP Semiconductors’ specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies NXP Semiconductors for any
liability, damages or failed product claims resulting from customer design and
use of the product for automotive applications beyond NXP Semiconductors’
standard warranty and NXP Semiconductors’ product specifications.
33.4 Licenses
33.5 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
I
2C-bus — logo is a trademark of NXP B.V.
MIFARE — is a trademark of NXP B.V.
34. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Purchase of NXP ICs with ISO/IEC 14443 type B functionality
This NXP Semiconductors IC is ISO/IEC 14443 Type B
software enabled and is licensed under Innovatron’s
Contactless Card patents license for ISO/IEC 14443 B.
The license includes the right to use the IC in systems
and/or end-user equipment.
RATP/Innovatron
Technology
Purchase of NXP ICs with NFC technology
Purchase of an NXP Semiconductors IC that complies with one of the Near
Field Communication (NFC) standards ISO/IEC 18092 and ISO/IEC 21481
does not convey an implied license under any patent right infringed by
implementation of any of those standards.PN512 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 4.5 — 17 December 2013
111345 130 of 136
NXP Semiconductors PN512
Full NFC Forum compliant solution
35. Tables
Table 1. Quick reference data . . . . . . . . . . . . . . . . . . . . .4
Table 2. Ordering information . . . . . . . . . . . . . . . . . . . . .5
Table 3. Pin description HVQFN32 . . . . . . . . . . . . . . . .10
Table 4. Pin description HVQFN40 . . . . . . . . . . . . . . . . 11
Table 5. Pin description TFBGA64 . . . . . . . . . . . . . . . . .12
Table 6. Communication overview for
ISO/IEC 14443 A/MIFARE reader/writer . . . . .14
Table 7. Communication overview for FeliCa
reader/writer . . . . . . . . . . . . . . . . . . . . . . . . . . .16
Table 8. FeliCa framing and coding . . . . . . . . . . . . . . . .16
Table 9. Start value for the CRC Polynomial: (00h),
(00h) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16
Table 10. Communication overview for Active
communication mode . . . . . . . . . . . . . . . . . . . .18
Table 11. Communication overview for Passive
communication mode . . . . . . . . . . . . . . . . . . . .19
Table 12. Framing and coding overview. . . . . . . . . . . . . .20
Table 13. MIFARE Card operation mode . . . . . . . . . . . . .20
Table 14. FeliCa Card operation mode . . . . . . . . . . . . . .21
Table 15. PN512 registers overview . . . . . . . . . . . . . . . .21
Table 16. Behavior of register bits and its designation. . .23
Table 17. PageReg register (address 00h); reset value:
00h, 0000000b . . . . . . . . . . . . . . . . . . . . . . . . .24
Table 18. Description of PageReg bits . . . . . . . . . . . . . . .24
Table 19. CommandReg register (address 01h); reset
value: 20h, 00100000b . . . . . . . . . . . . . . . . . . .24
Table 20. Description of CommandReg bits. . . . . . . . . . .24
Table 21. CommIEnReg register (address 02h); reset
value: 80h, 10000000b . . . . . . . . . . . . . . . . . . .25
Table 22. Description of CommIEnReg bits . . . . . . . . . . .25
Table 23. DivIEnReg register (address 03h); reset value:
00h, 00000000b . . . . . . . . . . . . . . . . . . . . . . . .26
Table 24. Description of DivIEnReg bits. . . . . . . . . . . . . .26
Table 25. CommIRqReg register (address 04h); reset
value: 14h, 00010100b . . . . . . . . . . . . . . . . . . .27
Table 26. Description of CommIRqReg bits . . . . . . . . . . .27
Table 27. DivIRqReg register (address 05h); reset
value: XXh, 000X00XXb . . . . . . . . . . . . . . . . . .28
Table 28. Description of DivIRqReg bits . . . . . . . . . . . . .28
Table 29. ErrorReg register (address 06h); reset value:
00h, 00000000b . . . . . . . . . . . . . . . . . . . . . . . .29
Table 30. Description of ErrorReg bits . . . . . . . . . . . . . . .29
Table 31. Status1Reg register (address 07h); reset
value: XXh, X100X01Xb . . . . . . . . . . . . . . . . . .30
Table 32. Description of Status1Reg bits . . . . . . . . . . . . .30
Table 33. Status2Reg register (address 08h); reset
value: 00h, 00000000b . . . . . . . . . . . . . . . . . . .31
Table 34. Description of Status2Reg bits . . . . . . . . . . . . .31
Table 35. FIFODataReg register (address 09h); reset
value: XXh, XXXXXXXXb . . . . . . . . . . . . . . . . .32
Table 36. Description of FIFODataReg bits . . . . . . . . . . .32
Table 37. FIFOLevelReg register (address 0Ah); reset
value: 00h, 00000000b . . . . . . . . . . . . . . . . . . .32
Table 38. Description of FIFOLevelReg bits. . . . . . . . . . .32
Table 39. WaterLevelReg register (address 0Bh); reset
value: 08h, 00001000b . . . . . . . . . . . . . . . . . . .33
Table 40. Description of WaterLevelReg bits. . . . . . . . . . 33
Table 41. ControlReg register (address 0Ch); reset
value: 00h, 00000000b . . . . . . . . . . . . . . . . . . 33
Table 42. Description of ControlReg bits . . . . . . . . . . . . 33
Table 43. BitFramingReg register (address 0Dh); reset
value: 00h, 00000000b . . . . . . . . . . . . . . . . . . 34
Table 44. Description of BitFramingReg bits . . . . . . . . . . 34
Table 45. CollReg register (address 0Eh); reset
value: XXh, 101XXXXXb . . . . . . . . . . . . . . . . . 35
Table 46. Description of CollReg bits. . . . . . . . . . . . . . . . 35
Table 47. PageReg register (address 10h); reset
value: 00h, 00000000b . . . . . . . . . . . . . . . . . . 36
Table 48. Description of PageReg bits . . . . . . . . . . . . . . 36
Table 49. ModeReg register (address 11h); reset value:
3Bh, 00111011b . . . . . . . . . . . . . . . . . . . . . . . . 37
Table 50. Description of ModeReg bits . . . . . . . . . . . . . . 37
Table 51. TxModeReg register (address 12h); reset
value: 00h, 00000000b . . . . . . . . . . . . . . . . . . 38
Table 52. Description of TxModeReg bits . . . . . . . . . . . . 38
Table 53. RxModeReg register (address 13h); reset
value: 00h, 00000000b . . . . . . . . . . . . . . . . . . 39
Table 54. Description of RxModeReg bits . . . . . . . . . . . . 39
Table 55. TxControlReg register (address 14h); reset
value: 80h, 10000000b . . . . . . . . . . . . . . . . . . 40
Table 56. Description of TxControlReg bits . . . . . . . . . . . 40
Table 57. TxAutoReg register (address 15h); reset
value: 00h, 00000000b . . . . . . . . . . . . . . . . . . 41
Table 58. Description of TxAutoReg bits . . . . . . . . . . . . . 41
Table 59. TxSelReg register (address 16h); reset value:
10h, 00010000b. . . . . . . . . . . . . . . . . . . . . . . . 42
Table 60. Description of TxSelReg bits . . . . . . . . . . . . . . 42
Table 61. RxSelReg register (address 17h); reset value:
84h, 10000100b. . . . . . . . . . . . . . . . . . . . . . . . 44
Table 62. Description of RxSelReg bits . . . . . . . . . . . . . . 44
Table 63. RxThresholdReg register (address 18h);
reset value: 84h, 10000100b . . . . . . . . . . . . . . 44
Table 64. Description of RxThresholdReg bits . . . . . . . . 44
Table 65. DemodReg register (address 19h); reset
value: 4Dh, 01001101b . . . . . . . . . . . . . . . . . . 45
Table 66. Description of DemodReg bits . . . . . . . . . . . . . 45
Table 67. FelNFC1Reg register (address 1Ah); reset
value: 00h, 00000000b . . . . . . . . . . . . . . . . . . 46
Table 68. Description of FelNFC1Reg bits . . . . . . . . . . . 46
Table 69. FelNFC2Reg register (address1Bh); reset
value: 00h, 00000000b . . . . . . . . . . . . . . . . . . 47
Table 70. Description of FelNFC2Reg bits . . . . . . . . . . . 47
Table 71. MifNFCReg register (address 1Ch); reset
value: 62h, 01100010b. . . . . . . . . . . . . . . . . . . 48
Table 72. Description of MifNFCReg bits. . . . . . . . . . . . . 48
Table 73. ManualRCVReg register (address 1Dh);
reset value: 00h, 00000000b . . . . . . . . . . . . . . 49
Table 74. Description of ManualRCVReg bits . . . . . . . . . 49
Table 75. TypeBReg register (address 1Eh); reset
value: 00h, 00000000b . . . . . . . . . . . . . . . . . . 50
Table 76. Description of TypeBReg bits. . . . . . . . . . . . . . 50
Table 77. SerialSpeedReg register (address 1Fh); PN512 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 4.5 — 17 December 2013
111345 131 of 136
NXP Semiconductors PN512
Full NFC Forum compliant solution
reset value: EBh, 11101011b . . . . . . . . . . . . . .51
Table 78. Description of SerialSpeedReg bits . . . . . . . . .51
Table 79. PageReg register (address 20h); reset value:
00h, 00000000b . . . . . . . . . . . . . . . . . . . . . . . .52
Table 80. Description of PageReg bits . . . . . . . . . . . . . . .52
Table 81. CRCResultReg register (address 21h); reset
value: FFh, 11111111b. . . . . . . . . . . . . . . . . . . .52
Table 82. Description of CRCResultReg bits . . . . . . . . . .52
Table 83. CRCResultReg register (address 22h); reset
value: FFh, 11111111b. . . . . . . . . . . . . . . . . . . .52
Table 84. Description of CRCResultReg bits . . . . . . . . . .52
Table 85. GsNOffReg register (address 23h); reset
value: 88h, 10001000b . . . . . . . . . . . . . . . . . . .53
Table 86. Description of GsNOffReg bits . . . . . . . . . . . . .53
Table 87. ModWidthReg register (address 24h); reset
value: 26h, 00100110b . . . . . . . . . . . . . . . . . . .54
Table 88. Description of ModWidthReg bits . . . . . . . . . . .54
Table 89. TxBitPhaseReg register (address 25h); reset
value: 87h, 10000111b . . . . . . . . . . . . . . . . . . .54
Table 90. Description of TxBitPhaseReg bits . . . . . . . . . .54
Table 91. RFCfgReg register (address 26h); reset
value: 48h, 01001000b . . . . . . . . . . . . . . . . . . .55
Table 92. Description of RFCfgReg bits . . . . . . . . . . . . .55
Table 93. GsNOnReg register (address 27h); reset
value: 88h, 10001000b . . . . . . . . . . . . . . . . . . .56
Table 94. Description of GsNOnReg bits . . . . . . . . . . . . .56
Table 95. CWGsPReg register (address 28h); reset
value: 20h, 00100000b . . . . . . . . . . . . . . . . . . .56
Table 96. Description of CWGsPReg bits. . . . . . . . . . . . .56
Table 97. ModGsPReg register (address 29h); reset
value: 20h, 00100000b . . . . . . . . . . . . . . . . . . .57
Table 98. Description of ModGsPReg bits . . . . . . . . . . . .57
Table 99. TModeReg register (address 2Ah); reset
value: 00h, 00000000b . . . . . . . . . . . . . . . . . . .57
Table 100. Description of TModeReg bits . . . . . . . . . . . . .57
Table 101. TPrescalerReg register (address 2Bh); reset
value: 00h, 00000000b . . . . . . . . . . . . . . . . . . .58
Table 102. Description of TPrescalerReg bits . . . . . . . . . .58
Table 103. TReloadReg (Higher bits) register (address
2Ch); reset value: 00h, 00000000b . . . . . . . . .59
Table 104. Description of the higher TReloadReg bits . . .59
Table 105. TReloadReg (Lower bits) register (address
2Dh); reset value: 00h, 00000000b . . . . . . . . .59
Table 106. Description of lower TReloadReg bits . . . . . . .59
Table 107. TCounterValReg (Higher bits) register (address
2Eh); reset value: XXh, XXXXXXXXb . . . . . . .60
Table 108. Description of the higher TCounterValReg bits 60
Table 109. TCounterValReg (Lower bits) register (address
2Fh); reset value: XXh, XXXXXXXXb. . . . . . . .60
Table 110. Description of lower TCounterValReg bits . . . .60
Table 111. PageReg register (address 30h); reset value:
00h, 00000000b . . . . . . . . . . . . . . . . . . . . . . . .60
Table 112. Description of PageReg bits. . . . . . . . . . . . . . .61
Table 113. TestSel1Reg register (address 31h); reset
value: 00h, 00000000b . . . . . . . . . . . . . . . . . . .62
Table 114. Description of TestSel1Reg bits . . . . . . . . . . . .62
Table 115. TestSel2Reg register (address 32h); reset
value: 00h, 00000000b . . . . . . . . . . . . . . . . . . .62
Table 116. Description of TestSel2Reg bits. . . . . . . . . . . . 62
Table 117. TestPinEnReg register (address 33h); reset
value: 80h, 10000000b . . . . . . . . . . . . . . . . . . 63
Table 118. Description of TestPinEnReg bits . . . . . . . . . . 63
Table 119. TestPinValueReg register (address 34h); reset
value: 00h, 00000000b . . . . . . . . . . . . . . . . . . 63
Table 120. Description of TestPinValueReg bits . . . . . . . . 63
Table 121. TestBusReg register (address 35h); reset
value: XXh, XXXXXXXXb . . . . . . . . . . . . . . . . 64
Table 122. Description of TestBusReg bits . . . . . . . . . . . . 64
Table 123. AutoTestReg register (address 36h); reset
value: 40h, 01000000b . . . . . . . . . . . . . . . . . . 64
Table 124. Description of bits . . . . . . . . . . . . . . . . . . . . . . 64
Table 125. VersionReg register (address 37h); reset
value: XXh, XXXXXXXXb . . . . . . . . . . . . . . . . 65
Table 126. Description of VersionReg bits . . . . . . . . . . . . 65
Table 127. AnalogTestReg register (address 38h); reset
value: 00h, 00000000b . . . . . . . . . . . . . . . . . . 66
Table 128. Description of AnalogTestReg bits . . . . . . . . . 66
Table 129. TestDAC1Reg register (address 39h); reset
value: XXh, 00XXXXXXb . . . . . . . . . . . . . . . . . 67
Table 130. Description of TestDAC1Reg bits . . . . . . . . . . 67
Table 131. TestDAC2Reg register (address 3Ah); reset
value: XXh, 00XXXXXXb . . . . . . . . . . . . . . . . . 67
Table 132. Description ofTestDAC2Reg bits. . . . . . . . . . . 67
Table 133. TestADCReg register (address 3Bh); reset
value: XXh, XXXXXXXXb . . . . . . . . . . . . . . . . 67
Table 134. Description of TestADCReg bits . . . . . . . . . . . 67
Table 135. RFTReg register (address 3Ch); reset value:
FFh, 11111111b . . . . . . . . . . . . . . . . . . . . . . . . 68
Table 136. Description of RFTReg bits . . . . . . . . . . . . . . . 68
Table 137. RFTReg register (address 3Dh, 3Fh); reset
value: 00h, 00000000b . . . . . . . . . . . . . . . . . . 68
Table 138. Description of RFTReg bits . . . . . . . . . . . . . . . 68
Table 139. RFTReg register (address 3Eh); reset value:
03h, 00000011b . . . . . . . . . . . . . . . . . . . . . . . . 68
Table 140. Description of RFTReg bits . . . . . . . . . . . . . . . 68
Table 141. Connection protocol for detecting different
interface types . . . . . . . . . . . . . . . . . . . . . . . . . 69
Table 142. Connection scheme for detecting the different
interface types . . . . . . . . . . . . . . . . . . . . . . . . . 69
Table 143. MOSI and MISO byte order . . . . . . . . . . . . . . 70
Table 144. MOSI and MISO byte order . . . . . . . . . . . . . . 71
Table 145. Address byte 0 register; address MOSI . . . . . 71
Table 146. BR_T0 and BR_T1 settings . . . . . . . . . . . . . . 72
Table 147. Selectable UART transfer speeds . . . . . . . . . 72
Table 148. UART framing . . . . . . . . . . . . . . . . . . . . . . . . . 72
Table 149. Read data byte order . . . . . . . . . . . . . . . . . . . 73
Table 150. Write data byte order . . . . . . . . . . . . . . . . . . . 73
Table 151. Address byte 0 register; address MOSI . . . . . 75
Table 152. Supported interface types . . . . . . . . . . . . . . . . 82
Table 153. Register and bit settings controlling the
signal on pin TX1 . . . . . . . . . . . . . . . . . . . . . . 84
Table 154. Register and bit settings controlling the
signal on pin TX2 . . . . . . . . . . . . . . . . . . . . . . 85
Table 155. Setting of the bits RFlevel in register
RFCfgReg (RFLevel amplifier deactivated) . . . 86
Table 156. CRC coprocessor parameters . . . . . . . . . . . . 93PN512 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 4.5 — 17 December 2013
111345 132 of 136
NXP Semiconductors PN512
Full NFC Forum compliant solution
Table 157. Interrupt sources . . . . . . . . . . . . . . . . . . . . . . .95
Table 158. Command overview . . . . . . . . . . . . . . . . . . .101
Table 159. Testsignal routing (TestSel2Reg = 07h) . . . . .107
Table 160. Description of Testsignals . . . . . . . . . . . . . . .107
Table 161. Testsignal routing (TestSel2Reg = 0Dh) . . . .108
Table 162. Description of Testsignals . . . . . . . . . . . . . . .108
Table 163. Testsignal routing (TestSel2Reg = 19h) . . . . .108
Table 164. Description of Testsignals . . . . . . . . . . . . . . .108
Table 165. Testsignals description. . . . . . . . . . . . . . . . . .108
Table 166. Limiting values . . . . . . . . . . . . . . . . . . . . . . . 111
Table 167. Operating conditions . . . . . . . . . . . . . . . . . . . 111
Table 168. Thermal characteristics . . . . . . . . . . . . . . . . . 112
Table 169. Characteristics . . . . . . . . . . . . . . . . . . . . . . . 112
Table 170. SPI timing characteristics . . . . . . . . . . . . . . . 117
Table 171. I2C-bus timing in Fast mode . . . . . . . . . . . . . 117
Table 172. AC symbols . . . . . . . . . . . . . . . . . . . . . . . . . . 119
Table 173. Timing specification for separated
Read/Write strobe. . . . . . . . . . . . . . . . . . . . . . 119
Table 174. Timing specification for common
Read/Write strobe. . . . . . . . . . . . . . . . . . . . . .120
Table 175. Package information . . . . . . . . . . . . . . . . . . .122
Table 176. Abbreviations . . . . . . . . . . . . . . . . . . . . . . . .126
Table 177. Revision history . . . . . . . . . . . . . . . . . . . . . . .127PN512 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 4.5 — 17 December 2013
111345 133 of 136
NXP Semiconductors PN512
Full NFC Forum compliant solution
36. Figures
Fig 1. Simplified block diagram of the PN512 . . . . . . . . .6
Fig 2. Detailed block diagram of the PN512 . . . . . . . . . .7
Fig 3. Pinning configuration HVQFN32 (SOT617-1) . . . .8
Fig 4. Pinning configuration HVQFN40 (SOT618-1) . . . .8
Fig 5. Pin configuration TFBGA64 (SOT1336-1) . . . . . . .9
Fig 6. PN512 Read/Write mode. . . . . . . . . . . . . . . . . . .14
Fig 7. ISO/IEC 14443 A/MIFARE Read/Write mode
communication diagram. . . . . . . . . . . . . . . . . . . .14
Fig 8. Data coding and framing according to
ISO/IEC 14443 A . . . . . . . . . . . . . . . . . . . . . . . . .15
Fig 9. FeliCa reader/writer communication diagram . . .16
Fig 10. NFCIP-1 mode. . . . . . . . . . . . . . . . . . . . . . . . . . .17
Fig 11. Active communication mode . . . . . . . . . . . . . . . .18
Fig 12. Passive communication mode . . . . . . . . . . . . . . .19
Fig 13. SPI connection to host. . . . . . . . . . . . . . . . . . . . .70
Fig 14. UART connection to microcontrollers . . . . . . . . .71
Fig 15. UART read data timing diagram . . . . . . . . . . . . .73
Fig 16. UART write data timing diagram . . . . . . . . . . . . .74
Fig 17. I2C-bus interface . . . . . . . . . . . . . . . . . . . . . . . . .75
Fig 18. Bit transfer on the I2C-bus . . . . . . . . . . . . . . . . . .76
Fig 19. START and STOP conditions . . . . . . . . . . . . . . .76
Fig 20. Acknowledge on the I2C-bus . . . . . . . . . . . . . . . .77
Fig 21. Data transfer on the I2C-bus . . . . . . . . . . . . . . . .77
Fig 22. First byte following the START procedure . . . . . .78
Fig 23. Register read and write access . . . . . . . . . . . . . .79
Fig 24. I2C-bus HS mode protocol switch . . . . . . . . . . . .80
Fig 25. I2C-bus HS mode protocol frame. . . . . . . . . . . . .81
Fig 26. Connection to host controller with separated
Read/Write strobes . . . . . . . . . . . . . . . . . . . . . . .83
Fig 27. Connection to host controller with common
Read/Write strobes . . . . . . . . . . . . . . . . . . . . . . .83
Fig 28. Data mode detector . . . . . . . . . . . . . . . . . . . . . . .87
Fig 29. Serial data switch for TX1 and TX2 . . . . . . . . . . .88
Fig 30. Communication flows using the S2C interface. . .89
Fig 31. Signal shape for SIGOUT in FeliCa card SAM
mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .90
Fig 32. Signal shape for SIGIN in SAM mode . . . . . . . . .90
Fig 33. Signal shape for SIGOUT in MIFARE Card SAM
mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .91
Fig 34. Signal shape for SIGIN in MIFARE Card SAM
mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .91
Fig 35. Quartz crystal connection . . . . . . . . . . . . . . . . . .99
Fig 36. Oscillator start-up time. . . . . . . . . . . . . . . . . . . .100
Fig 37. Autocoll Command . . . . . . . . . . . . . . . . . . . . . .104
Fig 38. Typical circuit diagram . . . . . . . . . . . . . . . . . . . . 110
Fig 39. Pin RX input voltage range . . . . . . . . . . . . . . . . 116
Fig 40. Timing diagram for SPI . . . . . . . . . . . . . . . . . . . 118
Fig 41. Timing for Fast and Standard mode devices
on the I2C-bus . . . . . . . . . . . . . . . . . . . . . . . . . . 118
Fig 42. Timing diagram for separated Read/Write
strobe. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .120
Fig 43. Timing diagram for common Read/Write strobe 121
Fig 44. Package outline package version (HVQFN32) .123
Fig 45. Package outline package version (HVQFN40) .124
Fig 46. Package outline package version (TFBGA64). .125PN512 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 4.5 — 17 December 2013
111345 134 of 136
continued >>
NXP Semiconductors PN512
Full NFC Forum compliant solution
37. Contents
1 Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 Different available versions. . . . . . . . . . . . . . . . 1
2 General description . . . . . . . . . . . . . . . . . . . . . . 1
3 Features and benefits . . . . . . . . . . . . . . . . . . . . 3
4 Quick reference data . . . . . . . . . . . . . . . . . . . . . 4
5 Ordering information. . . . . . . . . . . . . . . . . . . . . 5
6 Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . 6
7 Pinning information. . . . . . . . . . . . . . . . . . . . . . 8
7.1 Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
7.2 Pin description . . . . . . . . . . . . . . . . . . . . . . . . 10
8 Functional description . . . . . . . . . . . . . . . . . . 14
8.1 ISO/IEC 14443 A/MIFARE functionality . . . . . 14
8.2 ISO/IEC 14443 B functionality . . . . . . . . . . . . 15
8.3 FeliCa reader/writer functionality . . . . . . . . . . 16
8.3.1 FeliCa framing and coding . . . . . . . . . . . . . . . 16
8.4 NFCIP-1 mode . . . . . . . . . . . . . . . . . . . . . . . . 17
8.4.1 Active communication mode . . . . . . . . . . . . . 18
8.4.2 Passive communication mode . . . . . . . . . . . . 19
8.4.3 NFCIP-1 framing and coding . . . . . . . . . . . . . 20
8.4.4 NFCIP-1 protocol support. . . . . . . . . . . . . . . . 20
8.4.5 MIFARE Card operation mode . . . . . . . . . . . . 20
8.4.6 FeliCa Card operation mode . . . . . . . . . . . . . 21
9 PN512 register SET . . . . . . . . . . . . . . . . . . . . . 21
9.1 PN512 registers overview. . . . . . . . . . . . . . . . 21
9.1.1 Register bit behavior. . . . . . . . . . . . . . . . . . . . 23
9.2 Register description . . . . . . . . . . . . . . . . . . . . 24
9.2.1 Page 0: Command and status . . . . . . . . . . . . 24
9.2.1.1 PageReg. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
9.2.1.2 CommandReg . . . . . . . . . . . . . . . . . . . . . . . . 24
9.2.1.3 CommIEnReg . . . . . . . . . . . . . . . . . . . . . . . . . 25
9.2.1.4 DivIEnReg . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
9.2.1.5 CommIRqReg. . . . . . . . . . . . . . . . . . . . . . . . . 27
9.2.1.6 DivIRqReg . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
9.2.1.7 ErrorReg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
9.2.1.8 Status1Reg . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
9.2.1.9 Status2Reg . . . . . . . . . . . . . . . . . . . . . . . . . . . 31
9.2.1.10 FIFODataReg . . . . . . . . . . . . . . . . . . . . . . . . . 32
9.2.1.11 FIFOLevelReg . . . . . . . . . . . . . . . . . . . . . . . . 32
9.2.1.12 WaterLevelReg. . . . . . . . . . . . . . . . . . . . . . . . 33
9.2.1.13 ControlReg . . . . . . . . . . . . . . . . . . . . . . . . . . . 33
9.2.1.14 BitFramingReg . . . . . . . . . . . . . . . . . . . . . . . . 34
9.2.1.15 CollReg. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35
9.2.2 Page 1: Communication . . . . . . . . . . . . . . . . . 36
9.2.2.1 PageReg. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36
9.2.2.2 ModeReg . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37
9.2.2.3 TxModeReg . . . . . . . . . . . . . . . . . . . . . . . . . . 38
9.2.2.4 RxModeReg . . . . . . . . . . . . . . . . . . . . . . . . . . 39
9.2.2.5 TxControlReg. . . . . . . . . . . . . . . . . . . . . . . . . 40
9.2.2.6 TxAutoReg . . . . . . . . . . . . . . . . . . . . . . . . . . . 41
9.2.2.7 TxSelReg . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42
9.2.2.8 RxSelReg. . . . . . . . . . . . . . . . . . . . . . . . . . . . 44
9.2.2.9 RxThresholdReg . . . . . . . . . . . . . . . . . . . . . . 44
9.2.2.10 DemodReg. . . . . . . . . . . . . . . . . . . . . . . . . . . 45
9.2.2.11 FelNFC1Reg . . . . . . . . . . . . . . . . . . . . . . . . . 46
9.2.2.12 FelNFC2Reg . . . . . . . . . . . . . . . . . . . . . . . . . 47
9.2.2.13 MifNFCReg . . . . . . . . . . . . . . . . . . . . . . . . . . 48
9.2.2.14 ManualRCVReg . . . . . . . . . . . . . . . . . . . . . . . 49
9.2.2.15 TypeBReg . . . . . . . . . . . . . . . . . . . . . . . . . . . 50
9.2.2.16 SerialSpeedReg. . . . . . . . . . . . . . . . . . . . . . . 50
9.2.3 Page 2: Configuration . . . . . . . . . . . . . . . . . . 52
9.2.3.1 PageReg . . . . . . . . . . . . . . . . . . . . . . . . . . . . 52
9.2.3.2 CRCResultReg . . . . . . . . . . . . . . . . . . . . . . . 52
9.2.3.3 GsNOffReg . . . . . . . . . . . . . . . . . . . . . . . . . . 53
9.2.3.4 ModWidthReg . . . . . . . . . . . . . . . . . . . . . . . . 54
9.2.3.5 TxBitPhaseReg . . . . . . . . . . . . . . . . . . . . . . . 54
9.2.3.6 RFCfgReg . . . . . . . . . . . . . . . . . . . . . . . . . . . 55
9.2.3.7 GsNOnReg . . . . . . . . . . . . . . . . . . . . . . . . . . 56
9.2.3.8 CWGsPReg . . . . . . . . . . . . . . . . . . . . . . . . . . 56
9.2.3.9 ModGsPReg . . . . . . . . . . . . . . . . . . . . . . . . . 57
9.2.3.10 TMode Register, TPrescaler Register . . . . . . 57
9.2.3.11 TReloadReg. . . . . . . . . . . . . . . . . . . . . . . . . . 59
9.2.3.12 TCounterValReg . . . . . . . . . . . . . . . . . . . . . . 60
9.2.4 Page 3: Test . . . . . . . . . . . . . . . . . . . . . . . . . . 60
9.2.4.1 PageReg . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60
9.2.4.2 TestSel1Reg. . . . . . . . . . . . . . . . . . . . . . . . . . 62
9.2.4.3 TestSel2Reg. . . . . . . . . . . . . . . . . . . . . . . . . . 62
9.2.4.4 TestPinEnReg . . . . . . . . . . . . . . . . . . . . . . . . 63
9.2.4.5 TestPinValueReg . . . . . . . . . . . . . . . . . . . . . . 63
9.2.4.6 TestBusReg . . . . . . . . . . . . . . . . . . . . . . . . . . 64
9.2.4.7 AutoTestReg . . . . . . . . . . . . . . . . . . . . . . . . . 64
9.2.4.8 VersionReg . . . . . . . . . . . . . . . . . . . . . . . . . . 64
9.2.4.9 AnalogTestReg. . . . . . . . . . . . . . . . . . . . . . . . 66
9.2.4.10 TestDAC1Reg . . . . . . . . . . . . . . . . . . . . . . . . 67
9.2.4.11 TestDAC2Reg . . . . . . . . . . . . . . . . . . . . . . . . 67
9.2.4.12 TestADCReg . . . . . . . . . . . . . . . . . . . . . . . . . 67
9.2.4.13 RFTReg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 68
10 Digital interfaces . . . . . . . . . . . . . . . . . . . . . . . 68
10.1 Automatic microcontroller interface detection 68
10.2 Serial Peripheral Interface . . . . . . . . . . . . . . . 70
10.2.1 SPI read data . . . . . . . . . . . . . . . . . . . . . . . . . 70
10.2.2 SPI write data. . . . . . . . . . . . . . . . . . . . . . . . . 70
10.2.3 SPI address byte . . . . . . . . . . . . . . . . . . . . . . 71
10.3 UART interface . . . . . . . . . . . . . . . . . . . . . . . 71
10.3.1 Connection to a host . . . . . . . . . . . . . . . . . . . 71PN512 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 4.5 — 17 December 2013
111345 135 of 136
continued >>
NXP Semiconductors PN512
Full NFC Forum compliant solution
10.3.2 Selectable UART transfer speeds . . . . . . . . . 71
10.3.3 UART framing. . . . . . . . . . . . . . . . . . . . . . . . . 72
10.4 I2C Bus Interface . . . . . . . . . . . . . . . . . . . . . . 75
10.4.1 Data validity . . . . . . . . . . . . . . . . . . . . . . . . . . 76
10.4.2 START and STOP conditions . . . . . . . . . . . . . 76
10.4.3 Byte format . . . . . . . . . . . . . . . . . . . . . . . . . . . 76
10.4.4 Acknowledge . . . . . . . . . . . . . . . . . . . . . . . . . 77
10.4.5 7-Bit addressing . . . . . . . . . . . . . . . . . . . . . . . 78
10.4.6 Register write access . . . . . . . . . . . . . . . . . . . 78
10.4.7 Register read access . . . . . . . . . . . . . . . . . . . 79
10.4.8 High-speed mode . . . . . . . . . . . . . . . . . . . . . . 80
10.4.9 High-speed transfer . . . . . . . . . . . . . . . . . . . . 80
10.4.10 Serial data transfer format in HS mode . . . . . 80
10.4.11 Switching between F/S mode and HS mode . 82
10.4.12 PN512 at lower speed modes . . . . . . . . . . . . 82
11 8-bit parallel interface . . . . . . . . . . . . . . . . . . . 82
11.1 Overview of supported host controller
interfaces . . . . . . . . . . . . . . . . . . . . . . . . . . . . 82
11.2 Separated Read/Write strobe . . . . . . . . . . . . . 83
11.3 Common Read/Write strobe . . . . . . . . . . . . . . 83
12 Analog interface and contactless UART . . . . 84
12.1 General. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 84
12.2 TX driver . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 84
12.3 RF level detector . . . . . . . . . . . . . . . . . . . . . . 85
12.4 Data mode detector . . . . . . . . . . . . . . . . . . . . 86
12.5 Serial data switch . . . . . . . . . . . . . . . . . . . . . . 88
12.6 S2C interface support . . . . . . . . . . . . . . . . . . . 88
12.6.1 Signal shape for Felica S2C interface support 90
12.6.2 Waveform shape for ISO/IEC 14443A and
MIFARE S2C support . . . . . . . . . . . . . . . . . . . 91
12.7 Hardware support for FeliCa and NFC polling 92
12.7.1 Polling sequence functionality for initiator. . . . 92
12.7.2 Polling sequence functionality for target. . . . . 92
12.7.3 Additional hardware support for FeliCa and
NFC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 93
12.7.4 CRC coprocessor . . . . . . . . . . . . . . . . . . . . . . 93
13 FIFO buffer . . . . . . . . . . . . . . . . . . . . . . . . . . . . 94
13.1 Accessing the FIFO buffer . . . . . . . . . . . . . . . 94
13.2 Controlling the FIFO buffer . . . . . . . . . . . . . . . 94
13.3 FIFO buffer status information . . . . . . . . . . . . 94
14 Interrupt request system. . . . . . . . . . . . . . . . . 95
14.1 Interrupt sources overview . . . . . . . . . . . . . . . 95
15 Timer unit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 96
16 Power reduction modes . . . . . . . . . . . . . . . . . 98
16.1 Hard power-down . . . . . . . . . . . . . . . . . . . . . . 98
16.2 Soft power-down mode. . . . . . . . . . . . . . . . . . 98
16.3 Transmitter power-down mode . . . . . . . . . . . . 98
17 Oscillator circuitry . . . . . . . . . . . . . . . . . . . . . . 99
18 Reset and oscillator start-up time . . . . . . . . . 99
18.1 Reset timing requirements . . . . . . . . . . . . . . . 99
18.2 Oscillator start-up time . . . . . . . . . . . . . . . . . . 99
19 PN512 command set . . . . . . . . . . . . . . . . . . . 100
19.1 General description . . . . . . . . . . . . . . . . . . . 100
19.2 General behavior . . . . . . . . . . . . . . . . . . . . . 100
19.3 PN512 command overview . . . . . . . . . . . . . 101
19.3.1 PN512 command descriptions . . . . . . . . . . . 101
19.3.1.1 Idle . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 101
19.3.1.2 Config command . . . . . . . . . . . . . . . . . . . . . 101
19.3.1.3 Generate RandomID . . . . . . . . . . . . . . . . . . 102
19.3.1.4 CalcCRC . . . . . . . . . . . . . . . . . . . . . . . . . . . 102
19.3.1.5 Transmit . . . . . . . . . . . . . . . . . . . . . . . . . . . . 102
19.3.1.6 NoCmdChange . . . . . . . . . . . . . . . . . . . . . . 102
19.3.1.7 Receive . . . . . . . . . . . . . . . . . . . . . . . . . . . . 102
19.3.1.8 Transceive . . . . . . . . . . . . . . . . . . . . . . . . . . 103
19.3.1.9 AutoColl . . . . . . . . . . . . . . . . . . . . . . . . . . . 103
19.3.1.10 MFAuthent . . . . . . . . . . . . . . . . . . . . . . . . . . 105
19.3.1.11 SoftReset . . . . . . . . . . . . . . . . . . . . . . . . . . . 106
20 Testsignals. . . . . . . . . . . . . . . . . . . . . . . . . . . 107
20.1 Selftest . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 107
20.2 Testbus. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 107
20.3 Testsignals at pin AUX . . . . . . . . . . . . . . . . . 108
20.4 PRBS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 109
21 Errata sheet . . . . . . . . . . . . . . . . . . . . . . . . . . 109
22 Application design-in information. . . . . . . . . 110
23 Limiting values . . . . . . . . . . . . . . . . . . . . . . . . 111
24 Recommended operating conditions . . . . . . 111
25 Thermal characteristics . . . . . . . . . . . . . . . . . 112
26 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . 112
26.1 Timing characteristics . . . . . . . . . . . . . . . . . . 117
26.2 8-bit parallel interface timing . . . . . . . . . . . . . 119
26.2.1 AC symbols . . . . . . . . . . . . . . . . . . . . . . . . . . 119
26.2.2 AC operating specification . . . . . . . . . . . . . . . 119
26.2.2.1 Bus timing for separated Read/Write strobe . 119
26.2.2.2 Bus timing for common Read/Write strobe . 120
27 Package information. . . . . . . . . . . . . . . . . . . 122
28 Package outline. . . . . . . . . . . . . . . . . . . . . . . 123
29 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . 126
30 Glossary. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 126
31 References. . . . . . . . . . . . . . . . . . . . . . . . . . . 126
32 Revision history . . . . . . . . . . . . . . . . . . . . . . 127
33 Legal information . . . . . . . . . . . . . . . . . . . . . 128
33.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . 128
33.2 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . 128
33.3 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . 128
33.4 Licenses. . . . . . . . . . . . . . . . . . . . . . . . . . . . 129
33.5 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . 129NXP Semiconductors PN512
Full NFC Forum compliant solution
© NXP B.V. 2013. All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 17 December 2013
111345
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
34 Contact information. . . . . . . . . . . . . . . . . . . . 129
35 Tables . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 130
36 Figures . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 133
37 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 134
1. Product profile
1.1 General description
Unidirectional double ElectroStatic Discharge (ESD) protection diodes in a common
cathode configuration, encapsulated in a SOT23 (TO-236AB) small Surface-Mounted
Device (SMD) plastic package. The devices are designed for ESD and transient
overvoltage protection of up to two signal lines.
[1] All types available as /DG halogen-free version.
1.2 Features
1.3 Applications
MMBZxVCL; MMBZxVDL series
Double ESD protection diodes for transient overvoltage
suppression
Rev. 01 — 3 September 2008 Product data sheet
Table 1. Product overview
Type number[1] Package Configuration
NXP JEDEC
MMBZ12VDL SOT23 TO-236AB dual common cathode
MMBZ15VDL
MMBZ18VCL
MMBZ20VCL
MMBZ27VCL
MMBZ33VCL
■ Unidirectional ESD protection of
two lines
■ ESD protection up to 30 kV (contact
discharge)
■ Bidirectional ESD protection of one line ■ IEC 61000-4-2; level 4 (ESD)
■ Low diode capacitance: Cd ≤ 140 pF ■ IEC 61643-321
■ Rated peak pulse power: PPPM ≤ 40 W ■ AEC-Q101 qualified
■ Ultra low leakage current: IRM ≤ 5 nA
■ Computers and peripherals ■ Automotive electronic control units
■ Audio and video equipment ■ Portable electronics
■ Cellular handsets and accessoriesMMBZXVCL_MMBZXVDL_SER_1 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 01 — 3 September 2008 2 of 15
NXP Semiconductors MMBZxVCL; MMBZxVDL series
Double ESD protection diodes for transient overvoltage suppression
1.4 Quick reference data
2. Pinning information
Table 2. Quick reference data
Tamb = 25 °C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
Per diode
VRWM reverse standoff voltage
MMBZ12VDL
MMBZ12VDL/DG
- - 8.5 V
MMBZ15VDL
MMBZ15VDL/DG
- - 12.8 V
MMBZ18VCL
MMBZ18VCL/DG
- - 14.5 V
MMBZ20VCL
MMBZ20VCL/DG
- - 17 V
MMBZ27VCL
MMBZ27VCL/DG
- - 22 V
MMBZ33VCL
MMBZ33VCL/DG
- - 26 V
Cd diode capacitance f = 1 MHz; VR =0V
MMBZ12VDL
MMBZ12VDL/DG
- 110 140 pF
MMBZ15VDL
MMBZ15VDL/DG
- 85 105 pF
MMBZ18VCL
MMBZ18VCL/DG
- 70 90 pF
MMBZ20VCL
MMBZ20VCL/DG
- 65 80 pF
MMBZ27VCL
MMBZ27VCL/DG
- 48 60 pF
MMBZ33VCL
MMBZ33VCL/DG
- 45 55 pF
Table 3. Pinning
Pin Description Simplified outline Graphic symbol
1 anode (diode 1)
2 anode (diode 2)
3 common cathode
1 2
3
006aaa150
1 2
3MMBZXVCL_MMBZXVDL_SER_1 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 01 — 3 September 2008 3 of 15
NXP Semiconductors MMBZxVCL; MMBZxVDL series
Double ESD protection diodes for transient overvoltage suppression
3. Ordering information
4. Marking
[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
Table 4. Ordering information
Type number Package
Name Description Version
MMBZ12VDL - plastic surface-mounted package; 3 leads SOT23
MMBZ15VDL
MMBZ18VCL
MMBZ20VCL
MMBZ27VCL
MMBZ33VCL
MMBZ12VDL/DG - plastic surface-mounted package; 3 leads SOT23
MMBZ15VDL/DG
MMBZ18VCL/DG
MMBZ20VCL/DG
MMBZ27VCL/DG
MMBZ33VCL/DG
Table 5. Marking codes
Type number Marking code[1] Type number Marking code[1]
MMBZ12VDL *MA MMBZ12VDL/DG TJ*
MMBZ15VDL *MB MMBZ15VDL/DG TL*
MMBZ18VCL *MC MMBZ18VCL/DG TN*
MMBZ20VCL *MD MMBZ20VCL/DG TQ*
MMBZ27VCL *ME MMBZ27VCL/DG TS*
MMBZ33VCL *MF MMBZ33VCL/DG TU*MMBZXVCL_MMBZXVDL_SER_1 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 01 — 3 September 2008 4 of 15
NXP Semiconductors MMBZxVCL; MMBZxVDL series
Double ESD protection diodes for transient overvoltage suppression
5. Limiting values
[1] In accordance with IEC 61643-321 (10/1000 µs current waveform).
[2] Measured from pin 1 or 2 to pin 3.
[3] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[4] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.
[1] Device stressed with ten non-repetitive ESD pulses.
[2] Measured from pin 1 or 2 to pin 3.
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
Per diode
PPPM rated peak pulse power tp = 10/1000 µs [1][2] - 40 W
IPPM rated peak pulse current tp = 10/1000 µs [1][2]
MMBZ12VDL
MMBZ12VDL/DG
- 2.35 A
MMBZ15VDL
MMBZ15VDL/DG
- 1.9 A
MMBZ18VCL
MMBZ18VCL/DG
- 1.6 A
MMBZ20VCL
MMBZ20VCL/DG
- 1.4 A
MMBZ27VCL
MMBZ27VCL/DG
- 1A
MMBZ33VCL
MMBZ33VCL/DG
- 0.87 A
Per device
Ptot total power dissipation Tamb ≤ 25 °C [3] - 350 mW
[4] - 440 mW
Tj junction temperature - 150 °C
Tamb ambient temperature −55 +150 °C
Tstg storage temperature −65 +150 °C
Table 7. ESD maximum ratings
Tamb = 25 °C unless otherwise specified.
Symbol Parameter Conditions Min Max Unit
Per diode
VESD electrostatic discharge voltage [1][2]
IEC 61000-4-2
(contact discharge)
- 30 kV
machine model - 2 kVMMBZXVCL_MMBZXVDL_SER_1 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 01 — 3 September 2008 5 of 15
NXP Semiconductors MMBZxVCL; MMBZxVDL series
Double ESD protection diodes for transient overvoltage suppression
6. Thermal characteristics
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.
[3] Soldering point at pin 3.
Table 8. ESD standards compliance
Standard Conditions
Per diode
IEC 61000-4-2; level 4 (ESD) > 15 kV (air); > 8 kV (contact)
MIL-STD-883; class 3 (human body model) > 8 kV
Fig 1. 10/1000 µs pulse waveform according to
IEC 61643-321
Fig 2. ESD pulse waveform according to
IEC 61000-4-2
tp (ms)
0 4.0 1.0 2.0 3.0
006aab319
50
100
150
IPP
(%)
0
50 % IPP; 1000 µs
100 % IPP; 10 µs
001aaa631
IPP
100 %
90 %
t
30 ns
60 ns
10 %
tr = 0.7 ns to 1 ns
Table 9. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
Per device
Rth(j-a) thermal resistance from junction
to ambient
in free air [1] - - 350 K/W
[2] - - 280 K/W
Rth(j-sp) thermal resistance from junction
to solder point
[3] - - 60 K/WMMBZXVCL_MMBZXVDL_SER_1 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 01 — 3 September 2008 6 of 15
NXP Semiconductors MMBZxVCL; MMBZxVDL series
Double ESD protection diodes for transient overvoltage suppression
7. Characteristics
Table 10. Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
Per diode
VF forward voltage
MMBZ12VDL
MMBZ12VDL/DG
IF = 10 mA - - 0.9 V
MMBZ15VDL
MMBZ15VDL/DG
IF = 10 mA - - 0.9 V
MMBZ18VCL
MMBZ18VCL/DG
IF = 10 mA - - 0.9 V
MMBZ20VCL
MMBZ20VCL/DG
IF = 10 mA - - 0.9 V
MMBZ27VCL
MMBZ27VCL/DG
IF = 200 mA - - 1.1 V
MMBZ33VCL
MMBZ33VCL/DG
IF = 10 mA - - 0.9 V
VRWM reverse standoff
voltage
MMBZ12VDL
MMBZ12VDL/DG
- - 8.5 V
MMBZ15VDL
MMBZ15VDL/DG
- - 12.8 V
MMBZ18VCL
MMBZ18VCL/DG
- - 14.5 V
MMBZ20VCL
MMBZ20VCL/DG
- - 17 V
MMBZ27VCL
MMBZ27VCL/DG
- - 22 V
MMBZ33VCL
MMBZ33VCL/DG
- - 26 V
IRM reverse leakage current
MMBZ12VDL
MMBZ12VDL/DG
VRWM = 8.5 V - 0.1 5 nA
MMBZ15VDL
MMBZ15VDL/DG
VRWM = 12.8 V - 0.1 5 nA
MMBZ18VCL
MMBZ18VCL/DG
VRWM = 14.5 V - 0.1 5 nA
MMBZ20VCL
MMBZ20VCL/DG
VRWM = 17 V - 0.1 5 nA
MMBZ27VCL
MMBZ27VCL/DG
VRWM = 22 V - 0.1 5 nA
MMBZ33VCL
MMBZ33VCL/DG
VRWM = 26 V - 0.1 5 nAMMBZXVCL_MMBZXVDL_SER_1 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 01 — 3 September 2008 7 of 15
NXP Semiconductors MMBZxVCL; MMBZxVDL series
Double ESD protection diodes for transient overvoltage suppression
VBR breakdown voltage IR = 1 mA
MMBZ12VDL
MMBZ12VDL/DG
11.4 12 12.6 V
MMBZ15VDL
MMBZ15VDL/DG
14.3 15 15.8 V
MMBZ18VCL
MMBZ18VCL/DG
17.1 18 18.9 V
MMBZ20VCL
MMBZ20VCL/DG
19 20 21 V
MMBZ27VCL
MMBZ27VCL/DG
25.65 27 28.35 V
MMBZ33VCL
MMBZ33VCL/DG
31.35 33 34.65 V
Cd diode capacitance f = 1 MHz; VR =0V
MMBZ12VDL
MMBZ12VDL/DG
- 110 140 pF
MMBZ15VDL
MMBZ15VDL/DG
- 85 105 pF
MMBZ18VCL
MMBZ18VCL/DG
- 70 90 pF
MMBZ20VCL
MMBZ20VCL/DG
- 65 80 pF
MMBZ27VCL
MMBZ27VCL/DG
- 48 60 pF
MMBZ33VCL
MMBZ33VCL/DG
- 45 55 pF
VCL clamping voltage [1][2]
MMBZ12VDL
MMBZ12VDL/DG
IPPM = 2.35 A - - 17 V
MMBZ15VDL
MMBZ15VDL/DG
IPPM = 1.9 A - - 21.2 V
MMBZ18VCL
MMBZ18VCL/DG
IPPM = 1.6 A - - 25 V
MMBZ20VCL
MMBZ20VCL/DG
IPPM = 1.4 A - - 28 V
MMBZ27VCL
MMBZ27VCL/DG
IPPM = 1 A - - 38 V
MMBZ33VCL
MMBZ33VCL/DG
IPPM = 0.87 A - - 46 V
Table 10. Characteristics …continued
Tamb = 25 °C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max UnitMMBZXVCL_MMBZXVDL_SER_1 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 01 — 3 September 2008 8 of 15
NXP Semiconductors MMBZxVCL; MMBZxVDL series
Double ESD protection diodes for transient overvoltage suppression
[1] In accordance with IEC 61643-321 (10/1000 µs current waveform).
[2] Measured from pin 1 or 2 to pin 3.
SZ temperature coefficient IZ = 1 mA
MMBZ12VDL
MMBZ12VDL/DG
- 8.1 - mV/K
MMBZ15VDL
MMBZ15VDL/DG
- 11 - mV/K
MMBZ18VCL
MMBZ18VCL/DG
- 14 - mV/K
MMBZ20VCL
MMBZ20VCL/DG
- 15.8 - mV/K
MMBZ27VCL
MMBZ27VCL/DG
- 23 - mV/K
MMBZ33VCL
MMBZ33VCL/DG
- 29.4 - mV/K
Table 10. Characteristics …continued
Tamb = 25 °C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
MMBZ27VCL: unidirectional and bidirectional
Tamb = 25 °C
Fig 3. Rated peak pulse power as a function of
exponential pulse duration (rectangular
waveform); typical values
Fig 4. Relative variation of rated peak pulse power as
a function of junction temperature; typical
values
006aab327
102
10
103
PPPM
(W)
1
tp (ms)
10−2 103 102 10−1 1 10
Tj
(°C)
0 200 50 100 150
006aab321
0.4
0.8
1.2
PPPM
0
PPPM(25°C)MMBZXVCL_MMBZXVDL_SER_1 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 01 — 3 September 2008 9 of 15
NXP Semiconductors MMBZxVCL; MMBZxVDL series
Double ESD protection diodes for transient overvoltage suppression
f = 1 MHz; Tamb = 25 °C
(1) MMBZ15VDL: unidirectional
(2) MMBZ15VDL: bidirectional
(3) MMBZ27VCL: unidirectional
(4) MMBZ27VCL: bidirectional
MMBZ27VCL: VRWM = 22 V
Fig 5. Diode capacitance as a function of reverse
voltage; typical values
Fig 6. Reverse leakage current as a function of
junction temperature; typical values
Fig 7. V-I characteristics for a unidirectional
ESD protection diode
Fig 8. V-I characteristics for a bidirectional
ESD protection diode
VR (V)
0 25 5 10 15 20
006aab328
40
60
20
80
100
Cd
(pF)
0
(1)
(2)
(3)
(4)
006aab329
10−1
10−2
10
1
102
IRM
(nA)
10−3
Tamb (°C)
−75 175 −25 25 75 125
006aab324
−VCL −VBR −VRWM
−IRM
−IR
−IPP
V
I
P-N
− +
−IPPM 006aab325
−VCL −VBR −VRWM
−IRM VRWM VBR VCL
IRM
−IR
IR
−IPP
IPP
− +
IPPM
−IPPMMMBZXVCL_MMBZXVDL_SER_1 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 01 — 3 September 2008 10 of 15
NXP Semiconductors MMBZxVCL; MMBZxVDL series
Double ESD protection diodes for transient overvoltage suppression
8. Application information
The MMBZxVCL series and the MMBZxVDL series are designed for the protection of up
to two unidirectional data or signal lines from the damage caused by ESD and surge
pulses. The devices may be used on lines where the signal polarities are either positive or
negative with respect to ground. The devices provide a surge capability of 40 W per line
for a 10/1000 µs waveform.
Circuit board layout and protection device placement
Circuit board layout is critical for the suppression of ESD, Electrical Fast Transient (EFT)
and surge transients. The following guidelines are recommended:
1. Place the devices as close to the input terminal or connector as possible.
2. The path length between the device and the protected line should be minimized.
3. Keep parallel signal paths to a minimum.
4. Avoid running protected conductors in parallel with unprotected conductors.
5. Minimize all Printed-Circuit Board (PCB) conductive loops including power and
ground loops.
6. Minimize the length of the transient return path to ground.
7. Avoid using shared transient return paths to a common ground point.
8. Ground planes should be used whenever possible. For multilayer PCBs, use ground
vias.
9. Test information
9.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
Fig 9. Typical application: ESD and transient voltage protection of data lines
006aab330
MMBZxVCL/VDL
line 1 to be protected
unidirectional protection of two lines bidirectional protection of one line
line 2 to be protected
GND
MMBZxVCL/VDL
line 1 to be protected
GNDMMBZXVCL_MMBZXVDL_SER_1 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 01 — 3 September 2008 11 of 15
NXP Semiconductors MMBZxVCL; MMBZxVDL series
Double ESD protection diodes for transient overvoltage suppression
10. Package outline
11. Packing information
[1] For further information and the availability of packing methods, see Section 15.
Fig 10. Package outline SOT23 (TO-236AB)
Dimensions in mm 04-11-04
0.45
0.15
1.9
1.1
0.9
3.0
2.8
2.5
2.1
1.4
1.2
0.48
0.38
0.15
0.09
1 2
3
Table 11. Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.[1]
Type number Package Description Packing quantity
3000 10000
MMBZ12VDL SOT23 4 mm pitch, 8 mm tape and reel -215 -235
MMBZ15VDL
MMBZ18VCL
MMBZ20VCL
MMBZ27VCL
MMBZ33VCL
MMBZ12VDL/DG SOT23 4 mm pitch, 8 mm tape and reel -215 -235
MMBZ15VDL/DG
MMBZ18VCL/DG
MMBZ20VCL/DG
MMBZ27VCL/DG
MMBZ33VCL/DGMMBZXVCL_MMBZXVDL_SER_1 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 01 — 3 September 2008 12 of 15
NXP Semiconductors MMBZxVCL; MMBZxVDL series
Double ESD protection diodes for transient overvoltage suppression
12. Soldering
Fig 11. Reflow soldering footprint SOT23 (TO-236AB)
Fig 12. Wave soldering footprint SOT23 (TO-236AB)
solder lands
solder resist
occupied area
solder paste
sot023_fr
0.5
(3×)
0.6
(3×)
0.6
(3×)
0.7
(3×)
3
1
3.3
2.9
1.7
1.9
2
Dimensions in mm
solder lands
solder resist
occupied area
preferred transport direction during soldering
sot023_fw
2.8
4.5
1.4
4.6
1.4
(2×)
1.2
(2×)
2.2
2.6
Dimensions in mmMMBZXVCL_MMBZXVDL_SER_1 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 01 — 3 September 2008 13 of 15
NXP Semiconductors MMBZxVCL; MMBZxVDL series
Double ESD protection diodes for transient overvoltage suppression
13. Revision history
Table 12. Revision history
Document ID Release date Data sheet status Change notice Supersedes
MMBZXVCL_MMBZXVDL_SER_1 20080903 Product data sheet - -MMBZXVCL_MMBZXVDL_SER_1 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 01 — 3 September 2008 14 of 15
NXP Semiconductors MMBZxVCL; MMBZxVDL series
Double ESD protection diodes for transient overvoltage suppression
14. Legal information
14.1 Data sheet status
[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
14.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
14.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
ESD protection devices — These products are only intended for protection
against ElectroStatic Discharge (ESD) pulses and are not intended for any
other usage including, without limitation, voltage regulation applications. NXP
Semiconductors accepts no liability for use in such applications and therefore
such use is at the customer’s own risk.
14.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
15. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Document status[1][2] Product status[3] Definition
Objective [short] data sheet Development This document contains data from the objective specification for product development.
Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.
Product [short] data sheet Production This document contains the product specification.NXP Semiconductors MMBZxVCL; MMBZxVDL series
Double ESD protection diodes for transient overvoltage suppression
© NXP B.V. 2008. All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 3 September 2008
Document identifier: MMBZXVCL_MMBZXVDL_SER_1
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
16. Contents
1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 General description. . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.4 Quick reference data. . . . . . . . . . . . . . . . . . . . . 2
2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
3 Ordering information . . . . . . . . . . . . . . . . . . . . . 3
4 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 4
6 Thermal characteristics. . . . . . . . . . . . . . . . . . . 5
7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 6
8 Application information. . . . . . . . . . . . . . . . . . 10
9 Test information . . . . . . . . . . . . . . . . . . . . . . . . 10
9.1 Quality information . . . . . . . . . . . . . . . . . . . . . 10
10 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 11
11 Packing information. . . . . . . . . . . . . . . . . . . . . 11
12 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
13 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 13
14 Legal information. . . . . . . . . . . . . . . . . . . . . . . 14
14.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 14
14.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
14.3 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
14.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 14
15 Contact information. . . . . . . . . . . . . . . . . . . . . 14
16 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
1. Product profile
1.1 General description
The devices are 4-, 6- and 8-channel RC low-pass filter arrays which are designed to
provide filtering of undesired RF signals on the I/O ports of portable communication or
computing devices. In addition, the devices incorporate diodes to provide protection to
downstream components from ElectroStatic Discharge (ESD) voltages as high as ±30 kV.
The devices are fabricated using monolithic silicon technology and integrate up to eight
resistors and sixteen diodes in a 0.4 mm pitch 8-, 12- or 16-pin ultra-thin leadless Quad
Flat No-leads (QFN) plastic package with a height of 0.55 mm only.
1.2 Features and benefits
Pb-free, Restriction of Hazardous Substances (RoHS) compliant and free of halogen
and antimony (Dark Green compliant)
4-, 6- and 8-channel integrated π-type RC filter network
ESD protection to ±30 kV contact discharge according to IEC 61000-4-2 far exceeding
level 4
QFN plastic package with 0.4 mm pitch and 0.55 mm height
1.3 Applications
General-purpose ElectroMagnetic Interference (EMI) and Radio-Frequency
Interference (RFI) filtering and downstream ESD protection for:
Cellular phone and Personal Communication System (PCS) mobile handsets
Cordless telephones
Wireless data (WAN/LAN) systems
Mobile Internet Devices (MID)
Portable Media Players (PMP)
IP4251/52/53/54-TTL
Integrated 4-, 6- and 8-channel passive filter network
with ESD protection
Rev. 2 — 5 May 2011 Product data sheetIP4251_52_53_54-TTL All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 2 — 5 May 2011 2 of 18
NXP Semiconductors IP4251/52/53/54-TTL
Integrated 4-, 6- and 8-channel passive filter network
1.4 Quick reference data
[1] For the total channel.
2. Pinning information
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
IP4251CZ8-4-TTL; IP4251CZ12-6-TTL; IP4251CZ16-8-TTL
Cch channel capacitance f = 100 kHz;
Vbias(DC) = 2.5 V
[1] - 10 - pF
Rs(ch) channel series resistance 80 100 120 Ω
IP4252CZ8-4-TTL; IP4252CZ12-6-TTL; IP4252CZ16-8-TTL
Cch channel capacitance f = 100 kHz;
Vbias(DC) = 2.5 V
[1] - 12 - pF
Rs(ch) channel series resistance 32 40 48 Ω
IP4253CZ8-4-TTL; IP4253CZ12-6-TTL; IP4253CZ16-8-TTL
Cch channel capacitance f = 100 kHz;
Vbias(DC) = 2.5 V
[1] - 30 - pF
Rs(ch) channel series resistance 160 200 240 Ω
IP4254CZ8-4-TTL; IP4254CZ12-6-TTL; IP4254CZ16-8-TTL
Cch channel capacitance f = 100 kHz;
Vbias(DC) = 2.5 V
[1] - 30 - pF
Rs(ch) channel series resistance 80 100 120 Ω
Table 2. Pinning
Pin Description Simplified outline Graphic symbol
IP4251CZ8-4-TTL; IP4252CZ8-4-TTL; IP4253CZ8-4-TTL; IP4254CZ8-4-TTL (SOT1166-1)
1 and 8 filter channel 1
2 and 7 filter channel 2
3 and 6 filter channel 3
4 and 5 filter channel 4
ground pad ground
IP4251CZ12-6-TTL; IP4252CZ12-6-TTL; IP4253CZ12-6-TTL; IP4254CZ12-6-TTL (SOT1167-1)
1 and 12 filter channel 1
2 and 11 filter channel 2
3 and 10 filter channel 3
4 and 9 filter channel 4
5 and 8 filter channel 5
6 and 7 filter channel 6
ground pad ground
Transparent
top view
8
1
5
4
018aaa071
Rs(ch)
Cch
1 to 4 5 to 8
GND
2
Cch
2
Transparent
top view
12
1
7
6
018aaa072
Rs(ch)
1 to 6 7 to 12
GND
Cch
2
Cch
2IP4251_52_53_54-TTL All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 2 — 5 May 2011 3 of 18
NXP Semiconductors IP4251/52/53/54-TTL
Integrated 4-, 6- and 8-channel passive filter network
3. Ordering information
IP4251CZ16-8-TTL; IP4252CZ16-8-TTL; IP4253CZ16-8-TTL; IP4254CZ16-8-TTL (SOT1168-1)
1 and 16 filter channel 1
2 and 15 filter channel 2
3 and 14 filter channel 3
4 and 13 filter channel 4
5 and 12 filter channel 5
6 and 11 filter channel 6
7 and 10 filter channel 7
8 and 9 filter channel 8
ground pad ground
Table 2. Pinning …continued
Pin Description Simplified outline Graphic symbol
Transparent
top view
16
1
9
8
018aaa073
Rs(ch)
1 to 8 9 to 16
GND
Cch
2
Cch
2
Table 3. Ordering information
Type number Package
Name Description Version
IP4251CZ8-4-TTL HUSON8 plastic, thermal enhanced ultra thin small outline package; no leads;
8 terminals; body 1.35 × 1.7 × 0.55 mm
SOT1166-1
IP4251CZ12-6-TTL HUSON12 plastic, thermal enhanced ultra thin small outline package; no leads;
12 terminals; body 1.35 × 2.5 × 0.55 mm
SOT1167-1
IP4251CZ16-8-TTL HUSON16 plastic, thermal enhanced ultra thin small outline package; no leads;
16 terminals; body 1.35 × 3.3 × 0.55 mm
SOT1168-1
IP4252CZ8-4-TTL HUSON8 plastic, thermal enhanced ultra thin small outline package; no leads;
8 terminals; body 1.35 × 1.7 × 0.55 mm
SOT1166-1
IP4252CZ12-6-TTL HUSON12 plastic, thermal enhanced ultra thin small outline package; no leads;
12 terminals; body 1.35 × 2.5 × 0.55 mm
SOT1167-1
IP4252CZ16-8-TTL HUSON16 plastic, thermal enhanced ultra thin small outline package; no leads;
16 terminals; body 1.35 × 3.3 × 0.55 mm
SOT1168-1
IP4253CZ8-4-TTL HUSON8 plastic, thermal enhanced ultra thin small outline package; no leads;
8 terminals; body 1.35 × 1.7 × 0.55 mm
SOT1166-1
IP4253CZ12-6-TTL HUSON12 plastic, thermal enhanced ultra thin small outline package; no leads;
12 terminals; body 1.35 × 2.5 × 0.55 mm
SOT1167-1
IP4253CZ16-8-TTL HUSON16 plastic, thermal enhanced ultra thin small outline package; no leads;
16 terminals; body 1.35 × 3.3 × 0.55 mm
SOT1168-1
IP4254CZ8-4-TTL HUSON8 plastic, thermal enhanced ultra thin small outline package; no leads;
8 terminals; body 1.35 × 1.7 × 0.55 mm
SOT1166-1
IP4254CZ12-6-TTL HUSON12 plastic, thermal enhanced ultra thin small outline package; no leads;
12 terminals; body 1.35 × 2.5 × 0.55 mm
SOT1167-1
IP4254CZ16-8-TTL HUSON16 plastic, thermal enhanced ultra thin small outline package; no leads;
16 terminals; body 1.35 × 3.3 × 0.55 mm
SOT1168-1IP4251_52_53_54-TTL All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 2 — 5 May 2011 4 of 18
NXP Semiconductors IP4251/52/53/54-TTL
Integrated 4-, 6- and 8-channel passive filter network
4. Limiting values
[1] Device tested with 1000 pulses of ±15 kV contact discharges, according to the IEC 61000-4-2 model,
far exceeding IEC 61000-4-2 level 4 (8 kV contact discharge).
[2] Device tested with 1000 pulses of ±30 kV contact discharges, according to the IEC 61000-4-2 model,
far exceeding IEC 61000-4-2 level 4 (8 kV contact discharge).
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
IP4251CZ8-4-TTL; IP4251CZ12-6-TTL; IP4251CZ16-8-TTL
VESD electrostatic discharge
voltage
all pins to ground;
contact discharge
[1] - ±15 kV
IP4252CZ8-4-TTL; IP4252CZ12-6-TTL; IP4252CZ16-8-TTL
VESD electrostatic discharge
voltage
all pins to ground;
contact discharge
[1] - ±15 kV
IP4253CZ8-4-TTL; IP4253CZ12-6-TTL; IP4253CZ16-8-TTL
VESD electrostatic discharge
voltage
all pins to ground [2]
contact discharge - ±30 kV
air discharge - ±30 kV
IP4254CZ8-4-TTL; IP4254CZ12-6-TTL; IP4254CZ16-8-TTL
VESD electrostatic discharge
voltage
all pins to ground [2]
contact discharge - ±30 kV
air discharge - ±30 kV
Per device
VESD electrostatic discharge
voltage
IEC 61000-4-2, level 4;
all pins to ground
contact discharge - ±8 kV
air discharge - ±15 kV
VCC supply voltage −0.5 +5.6 V
Pch channel power dissipation Tamb = 85 °C - 60 mW
Ptot total power dissipation Tamb = 85 °C - 200 mW
Tstg storage temperature −55 +150 °C
Tamb ambient temperature −40 +85 °CIP4251_52_53_54-TTL All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 2 — 5 May 2011 5 of 18
NXP Semiconductors IP4251/52/53/54-TTL
Integrated 4-, 6- and 8-channel passive filter network
5. Characteristics
[1] For the total channel.
[2] Guaranteed by design.
Table 5. Channel characteristics
Tamb = 25 °C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
IP4251CZ8-4-TTL; IP4251CZ12-6-TTL; IP4251CZ16-8-TTL
Cch channel capacitance f = 100 kHz [1]
Vbias(DC) = 2.5 V - 10 - pF
Vbias(DC) =0V [2] - 15 - pF
Rs(ch) channel series resistance 80 100 120 Ω
IP4252CZ8-4-TTL; IP4252CZ12-6-TTL; IP4252CZ16-8-TTL
Cch channel capacitance f = 100 kHz [1]
Vbias(DC) = 2.5 V - 12 - pF
Vbias(DC) =0V [2] - 18 - pF
Rs(ch) channel series resistance 32 40 48 Ω
IP4253CZ8-4-TTL; IP4253CZ12-6-TTL; IP4253CZ16-8-TTL
Cch channel capacitance f = 100 kHz [1]
Vbias(DC) = 2.5 V - 30 - pF
Vbias(DC) =0V [2] - 45 - pF
Rs(ch) channel series resistance 160 200 240 Ω
IP4254CZ8-4-TTL; IP4254CZ12-6-TTL; IP4254CZ16-8-TTL
Cch channel capacitance f = 100 kHz [1]
Vbias(DC) = 2.5 V - 30 - pF
Vbias(DC) =0V [2] - 45 - pF
Rs(ch) channel series resistance 80 100 120 Ω
Per device
ILR reverse leakage current per channel; VI = 3.5 V - - 0.1 μA
VBR breakdown voltage positive clamp; II = 1 mA 5.8 - 9 V
VF forward voltage negative clamp; IF = 1 mA 0.4 - 1.5 VIP4251_52_53_54-TTL All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 2 — 5 May 2011 6 of 18
NXP Semiconductors IP4251/52/53/54-TTL
Integrated 4-, 6- and 8-channel passive filter network
Table 6. Frequency characteristics
Tamb = 25 °C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
IP4251CZ8-4-TTL; IP4251CZ12-6-TTL; IP4251CZ16-8-TTL
αil insertion loss Rsource = 50 Ω; RL = 50 Ω
800 MHz < f < 3 GHz - 16 - dB
f = 1 GHz - 20 - dB
αct crosstalk attenuation Rsource = 50 Ω; RL = 50 Ω;
800 MHz < f < 3 GHz
- 30 - dB
IP4252CZ8-4-TTL; IP4252CZ12-6-TTL; IP4252CZ16-8-TTL
αil insertion loss Rsource = 50 Ω; RL = 50 Ω
800 MHz < f < 3 GHz - 12 - dB
f = 1 GHz - 14 - dB
αct crosstalk attenuation Rsource = 50 Ω; RL = 50 Ω;
800 MHz < f < 3 GHz
- 40 - dB
IP4253CZ8-4-TTL; IP4253CZ12-6-TTL; IP4253CZ16-8-TTL
αil insertion loss Rsource = 50 Ω; RL = 50 Ω
800 MHz < f < 3 GHz - 33 - dB
f = 1 GHz 35 - - dB
αct crosstalk attenuation Rsource = 50 Ω; RL = 50 Ω;
800 MHz < f < 3 GHz
- 30 - dB
IP4254CZ8-4-TTL; IP4254CZ12-6-TTL; IP4254CZ16-8-TTL
αil insertion loss Rsource = 50 Ω; RL = 50 Ω
800 MHz < f < 3 GHz - 28 - dB
f = 1 GHz 30 - - dB
αct crosstalk attenuation Rsource = 50 Ω; RL = 50 Ω;
800 MHz < f < 3 GHz
- 30 - dBIP4251_52_53_54-TTL All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 2 — 5 May 2011 7 of 18
NXP Semiconductors IP4251/52/53/54-TTL
Integrated 4-, 6- and 8-channel passive filter network
6. Application information
6.1 Insertion loss
The devices are designed as EMI/RFI filters for multichannel interfaces.
The block schematic for measuring insertion loss in a 50 Ω system is shown in Figure 1.
Typical measurements results are shown in Figure 2 to Figure 6 for the different devices.
(1) IP4252CZ16-8-TTL - channel 1 to channel 16
(2) IP4251CZ16-8-TTL - channel 1 to channel 16
(3) IP4254CZ16-8-TTL - channel 1 to channel 16
(4) IP4253CZ16-8-TTL - channel 1 to channel 16
Fig 1. Frequency response setup Fig 2. Frequency response curves overview
018aaa074
50 Ω
Vgen
50 Ω
DUT
IN OUT
001aaj308
−30
−20
−40
−10
0
S21
(dB)
−50
f (MHz)
10−1 104 103 1 102 10
(1)
(2)
(3)
(4)IP4251_52_53_54-TTL All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 2 — 5 May 2011 8 of 18
NXP Semiconductors IP4251/52/53/54-TTL
Integrated 4-, 6- and 8-channel passive filter network
Due to the optimized silicon dice and package design, all channels in a single package
show a very good matching performance as the insertion loss for a channel at the
package side (e.g. channel 1 to channel 16) is nearly identical with the center channels
(e.g. channel 4 to channel 13).
(1) Channel 1 to channel 16
(2) Channel 4 to channel 13
(1) Channel 1 to channel 16
(2) Channel 4 to channel 13
Fig 3. IP4251CZ16-8-TTL: frequency response
curves
Fig 4. IP4252CZ16-8-TTL: frequency response
curves
(1) Channel 1 to channel 16
(2) Channel 4 to channel 13
(1) Channel 4 to channel 13
(2) Channel 1 to channel 16
Fig 5. IP4253CZ16-8-TTL: frequency response
curves
Fig 6. IP4254CZ16-8-TTL: frequency response
curves
001aaj608
−30
−20
−40
−10
0
S21
(dB)
−50
f (MHz)
10−1 104 103 1 102 10
(1)
(2)
001aaj609
−30
−20
−40
−10
0
S21
(dB)
−50
f (MHz)
10−1 104 103 1 102 10
(1)
(2)
001aaj610
−30
−20
−40
−10
0
S21
(dB)
−50
f (MHz)
10−1 104 103 1 102 10
(1)
(2)
001aaj611
−30
−20
−40
−10
0
S21
(dB)
−50
f (MHz)
10−1 104 103 1 102 10
(1)
(2)IP4251_52_53_54-TTL All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 2 — 5 May 2011 9 of 18
NXP Semiconductors IP4251/52/53/54-TTL
Integrated 4-, 6- and 8-channel passive filter network
6.2 Selection
The selection of one of the filter devices has to be performed depending on the maximum
clock frequency, driver strength, capacitive load of the sink, and also the maximum
applicable rise and fall times.
6.2.1 SDHC and MMC memory interface
The Secure Digital High Capacity (SDHC) memory card interface standard specification
and the Multi Media Card (MMC) (JESD 84A43) standard specification recommend a rise
and fall time of 25 % to 62.5 % (62.5 % to 25 % respectively) of 3 ns or less for the input
signal of the receiving interface side.
Assuming a typical capacitance of about 20 pF for the SDHC memory card itself, and
approximately 4 pF to 7 pF for the Printed-Circuit Board (PCB) and the card holder,
IP4252CZ12-6-TTL (6 channels, Rs(ch) = 40 Ω, Cch = 12 pF at Vbias(DC) = 2.5 V) is a
matching selection to filter and protect all relevant interface pins such as CLK, CMD, and
DAT0 to DAT3/CD. Please refer to Figure 7 for a general example of the implementation
of the device in an SDHC card interface.
In case additional channels such as write-protect or a mechanical card-detection switch
are used, the IP4252CZ16-8-TTL (8 channels, Rs(ch) = 40 Ω, Cch = 12 pF at
Vbias(DC) = 2.5 V) offers two additional channels.IP4251_52_53_54-TTL All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 2 — 5 May 2011 10 of 18
NXP Semiconductors IP4251/52/53/54-TTL
Integrated 4-, 6- and 8-channel passive filter network
The capacitance values specified for the signal channels of the MMC interface differ from
the SDHC specification. The MMC card-side interface is specified to have an intrinsic
capacitance of 12 pF to 18 pF and the total channel is limited according to the
specification to 30 pF only. Therefore, any filter device capacitance is limited to a
maximum of up to 18 pF, including the card holder and PCB traces.
Please refer to Figure 8 for a general example of the implementation of the IP4252 in an
MMC interface application.
Fig 7. Example of IP4252 in an SDHC card interface
018aaa075
IP4252CZ12-6-TTL
(IP4252CZ16-8-TTL)
DAT1
pull-up resistors
10 kΩ − 100 kΩ
10 kΩ − 90 kΩ
DAT3/CD pull-up
10 kΩ − 100 kΩ
DAT3/CD pull-up
>270 kΩ
exact value
depends on
required
logic levels
DAT1 SD MEMORY
CARD
SET_CLR_
CARD_DETECT
(ACMD42)
to HOST
INTERFACE
DAT0
GND
CLK
VCC(VSD)
VCC(VSD)
DAT3/CD
CMD
DAT2
optional:
2-additional channels
of IP4252CZ16-8-TTL
optional:
write protect switch
optional:
electrical card detect
WP
DAT0
CLK
CMD
DAT3/CD
DAT2
CD
WP
optional:
card detect switch
CDIP4251_52_53_54-TTL All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 2 — 5 May 2011 11 of 18
NXP Semiconductors IP4251/52/53/54-TTL
Integrated 4-, 6- and 8-channel passive filter network
To generate SDHC and MMC-compliant digital signals, the driver strength should not
significantly undercut 8 mA.
6.2.2 LCD interfaces, medium-speed interfaces
For digital interfaces such as LCD interfaces running at clock speeds between 10 MHz
and 25 MHz or more, IP4251, IP4252 or IP4254 can be used depending on the sink load,
clock speed, driver strength and rise and fall time requirements. Also the minimum
EMI filter requirements may be a decision-making factor.
6.2.3 Keypad, low-speed interfaces
Especially for lower-speed interfaces such as keypads, low-speed serial interfaces
(e.g. Recommended Standard (RS) 232) and low-speed control signals,
IP4253 (Rs(ch) = 200 Ω, Cch = 30 pF at Vbias(DC) = 2.5 V) offers a very robust
ESD protection and strong suppression of unwanted frequencies (EMI filtering).
Fig 8. Example of IP4252 in an MMC interface
018aaa076
IP4252CZ12-6-TTL
IP4252CZ8-4-TTL
DAT1
pull-up resistors
50 kΩ - 100 kΩ
CMD pull-up
4.7 kΩ - 100 kΩ
DAT1 C8
e.g.
RSMMC
HOST
INTERFACE
DAT0 C7
DAT7 C13
VSS2 C6
DAT6 C12
CLK C5
VCC(VMMC)
VCC(VMMC)
C4
VSS1 C3
DAT5 C11
CMD C2
DAT4 C10
DAT3 C1
DAT2
CMD
DAT4
DAT3
DAT2 C9
DAT0
DAT7
DAT6
CLK
DAT5IP4251_52_53_54-TTL All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 2 — 5 May 2011 12 of 18
NXP Semiconductors IP4251/52/53/54-TTL
Integrated 4-, 6- and 8-channel passive filter network
7. Package outline
Fig 9. Package outline SOT1166-1 (HUSON8)
Outline References
version
European
projection Issue date
IEC JEDEC JEITA
SOT1166-1 - - - - - - - - -
sot1166-1_po
10-03-18
10-03-22
Unit(1)
mm
max
nom
min
0.55 0.05
0.00
0.25
0.20
0.15
1.8
1.7
1.6
1.3
1.2
1.1
1.45
1.35
1.25
0.4 1.2
0.30
0.25
0.20
0.05
A
Dimensions
Note
1. Plastic or metal protrusions of 0.075 mm maximum per side are not included.
HUSON8: plastic, thermal enhanced ultra thin small outline package; no leads;
8 terminals; body 1.35 x 1.7 x 0.55 mm SOT1166-1
A1 c
0.127
b DDh E Eh
0.45
0.40
0.35
e e1 k
0.2
L v
0.1
w
0.05
y
0.05
y1
0 1 2 mm
scale
X
C
y1 C y
tiebars are indicated on
arbitrary location and size
detail X
A
A1
c
terminal 1
index area
D B A
E
b
terminal 1
index area
e1
e v C A B
w C
L
k
Eh
Dh
1
8
4
5IP4251_52_53_54-TTL All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 2 — 5 May 2011 13 of 18
NXP Semiconductors IP4251/52/53/54-TTL
Integrated 4-, 6- and 8-channel passive filter network
Fig 10. Package outline SOT1167-1 (HUSON12)
Outline References
version
European
projection Issue date
IEC JEDEC JEITA
SOT1167-1 - - - - - - - - -
sot1167-1_po
10-03-18
10-03-22
Unit(1)
mm
max
nom
min
0.55 0.05
0.00
0.25
0.20
0.15
2.6
2.5
2.4
2.1
2.0
1.9
1.45
1.35
1.25
0.4 2.0
0.30
0.25
0.20
0.05
A
Dimensions
Note
1. Plastic or metal protrusions of 0.075 mm maximum per side are not included.
HUSON12: plastic, thermal enhanced ultra thin small outline package; no leads;
12 terminals; body 1.35 x 2.5 x 0.55 mm SOT1167-1
A1 c
0.127
b DDh E Eh
0.45
0.40
0.35
e e1 k
0.2
L v
0.1
w
0.05
y
0.05
y1
0 1 2 mm
scale
X
C
y1 C y
tiebars are indicated on
arbitrary location and size
detail X
A
A1
c
terminal 1
index area
D B A
E
b
terminal 1
index area
e1
e v C A B
w C
L
k
Eh
Dh
1
12
6
7IP4251_52_53_54-TTL All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 2 — 5 May 2011 14 of 18
NXP Semiconductors IP4251/52/53/54-TTL
Integrated 4-, 6- and 8-channel passive filter network
Fig 11. Package outline SOT1168-1 (HUSON16)
Outline References
version
European
projection Issue date
IEC JEDEC JEITA
SOT1168-1 - - - - - - - - -
sot1168-1_po
10-03-18
10-03-22
Unit(1)
mm
max
nom
min
0.55 0.05
0.00
0.25
0.20
0.15
3.4
3.3
3.2
2.9
2.8
2.7
1.45
1.35
1.25
0.4 2.8
0.30
0.25
0.20
0.05
A
Dimensions
Note
1. Plastic or metal protrusions of 0.075 mm maximum per side are not included.
HUSON16: plastic, thermal enhanced ultra thin small outline package; no leads;
16 terminals; body 1.35 x 3.3 x 0.55 mm SOT1168-1
A1 c
0.127
b DDh E Eh
0.45
0.40
0.35
e e1 k
0.2
L v
0.1
w
0.05
y
0.05
y1
0 1 2 mm
scale
X
C
y1 C y
tiebars are indicated on
arbitrary location and size
detail X
A
A1
c
terminal 1
index area
D B A
E
b
terminal 1
index area
e1
e v C A B
w C
L
k
Eh
Dh
1
16
8
9IP4251_52_53_54-TTL All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 2 — 5 May 2011 15 of 18
NXP Semiconductors IP4251/52/53/54-TTL
Integrated 4-, 6- and 8-channel passive filter network
8. Revision history
Table 7. Revision history
Document ID Release date Data sheet status Change notice Supersedes
IP4251_52_53_54-TTL v.2 20110505 Product data sheet - IP4251_52_53_54-TTL v.1
Modifications: • Section 1 “Product profile”: updated.
• Table 2 “Pinning”: updated.
• Deleted section “Thermal characteristics”.
IP4251_52_53_54-TTL v.1 20110131 Objective data sheet - -IP4251_52_53_54-TTL All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 2 — 5 May 2011 16 of 18
NXP Semiconductors IP4251/52/53/54-TTL
Integrated 4-, 6- and 8-channel passive filter network
9. Legal information
9.1 Data sheet status
[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
9.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to offer functions and qualities beyond those described in the
Product data sheet.
9.3 Disclaimers
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information.
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and operation of their applications
and products using NXP Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or customer product
design. It is customer’s sole responsibility to determine whether the NXP
Semiconductors product is suitable and fit for the customer’s applications and
products planned, as well as for the planned application and use of
customer’s third party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks associated with their
applications and products.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
third party customer(s). Customer is responsible for doing all necessary
testing for the customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications and
the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from national authorities.
Document status[1][2] Product status[3] Definition
Objective [short] data sheet Development This document contains data from the objective specification for product development.
Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.
Product [short] data sheet Production This document contains the product specification. IP4251_52_53_54-TTL All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 2 — 5 May 2011 17 of 18
NXP Semiconductors IP4251/52/53/54-TTL
Integrated 4-, 6- and 8-channel passive filter network
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Non-automotive qualified products — Unless this data sheet expressly
states that this specific NXP Semiconductors product is automotive qualified,
the product is not suitable for automotive use. It is neither qualified nor tested
in accordance with automotive testing or application requirements. NXP
Semiconductors accepts no liability for inclusion and/or use of
non-automotive qualified products in automotive equipment or applications.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards, customer
(a) shall use the product without NXP Semiconductors’ warranty of the
product for such automotive applications, use and specifications, and (b)
whenever customer uses the product for automotive applications beyond
NXP Semiconductors’ specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies NXP Semiconductors for any
liability, damages or failed product claims resulting from customer design and
use of the product for automotive applications beyond NXP Semiconductors’
standard warranty and NXP Semiconductors’ product specifications.
9.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
10. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.comNXP Semiconductors IP4251/52/53/54-TTL
Integrated 4-, 6- and 8-channel passive filter network
© NXP B.V. 2011. All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 5 May 2011
Document identifier: IP4251_52_53_54-TTL
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
11. Contents
1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 General description . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . 1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . 2
2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
3 Ordering information. . . . . . . . . . . . . . . . . . . . . 3
4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 4
5 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 5
6 Application information. . . . . . . . . . . . . . . . . . . 7
6.1 Insertion loss . . . . . . . . . . . . . . . . . . . . . . . . . . 7
6.2 Selection. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
6.2.1 SDHC and MMC memory interface . . . . . . . . . 9
6.2.2 LCD interfaces, medium-speed interfaces . . . 11
6.2.3 Keypad, low-speed interfaces. . . . . . . . . . . . . 11
7 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 12
8 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 15
9 Legal information. . . . . . . . . . . . . . . . . . . . . . . 16
9.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 16
9.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
9.3 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
9.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 17
10 Contact information. . . . . . . . . . . . . . . . . . . . . 17
11 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
DATA SHEET
Product data sheet
Supersedes data of 2003 Nov 27
2004 Nov 04
DISCRETE SEMICONDUCTORS
PBSS5320X
20 V, 3 A
PNP low VCEsat (BISS) transistor
dbook, halfpage
M3D1092004 Nov 04 2
NXP Semiconductors Product data sheet
20 V, 3 A
PNP low VCEsat (BISS) transistor PBSS5320X
FEATURES
• SOT89 (SC-62) package
• Low collector-emitter saturation voltage VCEsat
• High collector current capability: IC and ICM
• Higher efficiency leading to less heat generation
• Reduced printed-circuit board requirements.
APPLICATIONS
• Power management
– DC/DC converters
– Supply line switching
– Battery charger
– LCD backlighting.
• Peripheral drivers
– Driver in low supply voltage applications (e.g. lamps
and LEDs)
– Inductive load driver (e.g. relays,
buzzers and motors).
DESCRIPTION
PNP low VCEsat transistor in a SOT89 plastic package.
NPN complement: PBSS4320X.
MARKING
TYPE NUMBER MARKING CODE
PBSS5320X S45
PINNING
PIN DESCRIPTION
1 emitter
2 collector
3 base
321 sym079
1
2
3
Fig.1 Simplified outline (SOT89) and symbol.
QUICK REFERENCE DATA
SYMBOL PARAMETER MAX. UNIT
VCEO collector-emitter voltage −20 V
IC collector current (DC) −3 A
ICM peak collector current −5 A
RCEsat equivalent on-resistance 105 mΩ
ORDERING INFORMATION
TYPE NUMBER
PACKAGE
NAME DESCRIPTION VERSION
PBSS5320X SC-62 plastic surface mounted package; collector pad for good heat
transfer; 3 leads
SOT892004 Nov 04 3
NXP Semiconductors Product data sheet
20 V, 3 A
PNP low VCEsat (BISS) transistor PBSS5320X
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Notes
1. Device mounted on a FR4 printed-circuit board; single-sided copper; tin-plated; standard footprint.
2. Device mounted on a FR4 printed-circuit board; single-sided copper; tin-plated; mounting pad for collector 1 cm2.
3. Device mounted on a FR4 printed-circuit board; single-sided copper; tin-plated; mounting pad for collector 6 cm2.
4. Device mounted on a ceramic printed-circuit board 7 cm2, single-sided copper, tin-plated.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter − −20 V
VCEO collector-emitter voltage open base − −20 V
VEBO emitter-base voltage open collector − −5 V
IC collector current (DC) note 4 − −3 A
ICM peak collector current limited by Tj(max) − −5 A
IB base current (DC) − −0.5 A
Ptot total power dissipation Tamb ≤ 25 °C
note 1 − 550 mW
note 2 − 1 W
note 3 − 1.4 W
note 4 − 1.6 W
Tstg storage temperature −65 +150 °C
Tj junction temperature − 150 °C
Tamb ambient temperature −65 +150 °C2004 Nov 04 4
NXP Semiconductors Product data sheet
20 V, 3 A
PNP low VCEsat (BISS) transistor PBSS5320X
handbook, halfpage
0 40 80 160
Ptot
(W) (1)
(2)
(3)
2
0
1.6
120
1.2
0.8
0.4
MLE372
Tamb (°C)
(4)
Fig.2 Power derating curves.
(1) Ceramic PCB; 7 cm2
mounting pad for collector.
(2) FR4 PCB; 6 cm2 copper
mounting pad for collector.
(3) FR4 PCB; 1 cm2 copper
mounting pad for collector.
(4) Standard footprint.2004 Nov 04 5
NXP Semiconductors Product data sheet
20 V, 3 A
PNP low VCEsat (BISS) transistor PBSS5320X
THERMAL CHARACTERISTICS
Notes
1. Device mounted on a FR4 printed-circuit board; single-sided copper; tin-plated; standard footprint.
2. Device mounted on a FR4 printed-circuit board; single-sided copper; tin-plated; mounting pad for collector 1 cm2.
3. Device mounted on a FR4 printed-circuit board; single-sided copper; tin-plated; mounting pad for collector 6 cm2.
4. Device mounted on a ceramic printed-circuit board 7 cm2, single-sided copper, tin-plated.
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth(j-a) thermal resistance from junction to ambient in free air
note 1 225 K/W
note 2 125 K/W
note 3 90 K/W
note 4 80 K/W
Rth(j-s) thermal resistance from junction to soldering point 16 K/W
006aaa243
10
1
102
103
Zth(j-a)
(K/W)
10−1
10−5 10 10 −2 10−4 102 10−1
tp (s)
10−3 103 1
duty cycle =
1.00
0.75
0.50
0.33
0.20
0.10
0.05
0.02
0.01
0
Fig.3 Transient thermal impedance as a function of pulse time; typical values.
Mounted on FR4 printed-circuit board; standard footprint.2004 Nov 04 6
NXP Semiconductors Product data sheet
20 V, 3 A
PNP low VCEsat (BISS) transistor PBSS5320X
006aaa244
10
1
102
103
Zth(j-a)
(K/W)
10−1
10−5 10 10 −2 10−4 102 10−1
tp (s)
10−3 103 1
duty cycle =
1.00
0.75
0.50
0.20
0.05
0.02
0.01
0
0.33
0.10
Fig.4 Transient thermal impedance as a function of pulse time; typical values.
Mounted on FR4 printed-circuit board; mounting pad for collector 1 cm2.
006aaa245
10
1
102
103
Zth(j-a)
(K/W)
10−1
10−5 10 10 −2 10−4 102 10−1
tp (s)
10−3 103 1
duty cycle =
1.00
0.75
0.50
0.20
0.05
0.02
0.01
0
0.33
0.10
Fig.5 Transient thermal impedance as a function of pulse time; typical values.
Mounted on FR4 printed-circuit board; mounting pad for collector 6 cm2.2004 Nov 04 7
NXP Semiconductors Product data sheet
20 V, 3 A
PNP low VCEsat (BISS) transistor PBSS5320X
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
Note
1. Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
ICBO collector-base cut-off current VCB = −20 V; IE = 0 A − − −100 nA
VCB = −20 V; IE = 0 A; Tj = 150 °C − − −50 μA
ICES collector-emitter cut-off current VCE = −20 V; VBE = 0 V − − −100 nA
IEBO emitter-base cut-off current VEB = −5 V; IC = 0 A − − −100 nA
hFE DC current gain VCE = −2 V
IC = −0.1 A 220 − −
IC = −0.5 A 220 − −
IC = −1 A; note 1 200 − −
IC = −2 A; note 1 150 − −
IC = −3 A; note 1 100 − −
VCEsat collector-emitter saturation
voltage
IC = −0.5 A; IB = −50 mA − − −70 mV
IC = −1 A; IB = −50 mA − − −130 mV
IC = −2 A; IB = −100 mA − − −230 mV
IC = −3 A; IB = −300 mA; note 1 − − −300 mV
RCEsat equivalent on-resistance IC = −3 A; IB = −300 mA; note 1 − 90 105 mΩ
VBEsat base-emitter saturation voltage IC = −2 A; IB = −100 mA − −1.1 − V
IC = −3 A; IB = −300 mA; note 1 − − −1.2 V
VBEon base-emitter turn-on voltage VCE = −2 V; IC = −1 A −1.1 − − V
fT transition frequency IC = −100 mA; VCE = −5 V;
f = 100 MHz
100 − − MHz
Cc collector capacitance VCB = −10 V; IE = ie = 0 A; f = 1 MHz − − 50 pF2004 Nov 04 8
NXP Semiconductors Product data sheet
20 V, 3 A
PNP low VCEsat (BISS) transistor PBSS5320X
0
800
200
400
600
MLE374
−10−1 −1
I
C (mA)
hFE
−10 −102 −103 −104
(2)
(3)
(1)
Fig.6 DC current gain as a function of collector
current; typical values.
VCE = −2 V.
(1) Tamb = 100 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
handbook, halfpage
MLE368
0
−1.2
−0.4
−0.8
−10−1 −1 −10
I
C (mA)
VBE
(V)
−102 −103 −104
(1)
(3)
(2)
Fig.7 Base-emitter voltage as a function of
collector current; typical values.
VCE = −2 V.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 100 °C.
handbook, halfpage
MLE370
−1
−10−1
−10−2
−10−3
−10−1 −1 −10
I
C (mA)
VCEsat
(V)
−102 −103 −104
(1)
(3)
(2)
Fig.8 Collector-emitter saturation voltage as a
function of collector current; typical values.
IC/IB = 20.
(1) Tamb = 100 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
handbook, halfpage
MLE371
−1
−10−1
−10−2
−10−3
−10−1 −1 −10
I
C (mA)
VCEsat
(V)
−102 −103 −104
(3)
(1)
(2)
Fig.9 Collector-emitter saturation voltage as a
function of collector current; typical values.
Tamb = 25 °C.
(1) IC/IB = 100.
(2) IC/IB = 50.
(3) IC/IB = 10.2004 Nov 04 9
NXP Semiconductors Product data sheet
20 V, 3 A
PNP low VCEsat (BISS) transistor PBSS5320X
handbook, halfpage −10
−1
−10−1 −1 −10 −102 −103 −104 −10−1
MLE369
I
C (mA)
VBEsat
(V)
(2)
(3)
(1)
Fig.10 Base-emitter saturation voltage as a
function of collector current; typical values.
IC/IB = 20.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 100 °C.
handbook, halfpage
103
102
10
1
10−2
10−1
MLE376
−10−1 −1 −10
I
C (mA)
RCEsat
(Ω)
−103 −102 −104
(1)
(3) (2)
Fig.11 Equivalent on-resistance as a function of
collector current; typical values.
Tamb = 25 °C.
(1) IC/IB = 100. (2) IC/IB = 50. (3) IC/IB = 10.
handbook, halfpage
MLE367
102
10
10−1
10−2
1
−10−1 −1
RCEsat
(Ω)
I
C (mA) −10 −102 −103 −104
(2)
(3)
(1)
Fig.12 Equivalent on-resistance as a function of
collector current; typical values.
IC/IB = 20.
(1) Tamb = 100 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C.
handbook, halfpage
0 −2
−5
0
−1
−2
−3
−4
−0.4
VCE (V)
I
C
(A)
−0.8 −1.2 −1.6
MLE375
(8)
(5)
(1)
(2)
(3)
(4)
(10)
(7)
(6)
(9)
Fig.13 Collector current as a function of
collector-emitter voltage; typical values.
(1) IB = −25 mA.
(2) IB = −22.5 mA.
(3) IB = −20 mA.
(4) IB = −17.5 mA.
(5) IB = −15 mA.
(6) IB = −12.5 mA.
(7) IB = −10 mA.
(8) IB = −7.5 mA.
(9) IB = −5 mA.
(10) IB = −2.5 mA.
Tamb = 25 °C.2004 Nov 04 10
NXP Semiconductors Product data sheet
20 V, 3 A
PNP low VCEsat (BISS) transistor PBSS5320X
PACKAGE OUTLINE
REFERENCES OUTLINE
VERSION
EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC JEITA
DIMENSIONS (mm are the original dimensions)
SOT89 TO-243 SC-62 04-08-03
06-03-16
w M
e1
e
E
HE
B
0 2 4 mm
scale
bp3
bp2
bp1
c
D
Lp
A
Plastic surface-mounted package; collector pad for good heat transfer; 3 leads SOT89
1 23
UNIT A
mm 1.6
1.4
0.48
0.35
c
0.44
0.23
D
4.6
4.4
E
2.6
2.4
HE Lp
4.25
3.75
e
3.0
w
0.13
e1
1.5 1.2
0.8
bp1 bp2
0.53
0.40
bp3
1.8
1.42004 Nov 04 11
NXP Semiconductors Product data sheet
20 V, 3 A
PNP low VCEsat (BISS) transistor PBSS5320X
DATA SHEET STATUS
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2) DEFINITION
Objective data sheet Development This document contains data from the objective specification for product
development.
Preliminary data sheet Qualification This document contains data from the preliminary specification.
Product data sheet Production This document contains the product specification.
DISCLAIMERS
General ⎯ Information in this document is believed to be
accurate and reliable. However, NXP Semiconductors
does not give any representations or warranties,
expressed or implied, as to the accuracy or completeness
of such information and shall have no liability for the
consequences of use of such information.
Right to make changes ⎯ NXP Semiconductors
reserves the right to make changes to information
published in this document, including without limitation
specifications and product descriptions, at any time and
without notice. This document supersedes and replaces all
information supplied prior to the publication hereof.
Suitability for use ⎯ NXP Semiconductors products are
not designed, authorized or warranted to be suitable for
use in medical, military, aircraft, space or life support
equipment, nor in applications where failure or malfunction
of an NXP Semiconductors product can reasonably be
expected to result in personal injury, death or severe
property or environmental damage. NXP Semiconductors
accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at
the customer’s own risk.
Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
Terms and conditions of sale ⎯ NXP Semiconductors
products are sold subject to the general terms and
conditions of commercial sale, as published at
http://www.nxp.com/profile/terms, including those
pertaining to warranty, intellectual property rights
infringement and limitation of liability, unless explicitly
otherwise agreed to in writing by NXP Semiconductors. In
case of any inconsistency or conflict between information
in this document and such terms and conditions, the latter
will prevail.
No offer to sell or license ⎯ Nothing in this document
may be interpreted or construed as an offer to sell products
that is open for acceptance or the grant, conveyance or
implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Export control ⎯ This document as well as the item(s)
described herein may be subject to export control
regulations. Export might require a prior authorization from
national authorities.
Quick reference data ⎯ The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding. NXP Semiconductors
Contact information
For additional information please visit: http://www.nxp.com
For sales offices addresses send e-mail to: salesaddresses@nxp.com
© NXP B.V. 2009
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimers. No changes were made to the technical content, except for package outline
drawings which were updated to the latest version.
Printed in The Netherlands R75/03/pp12 Date of release: 2004 Nov 04 Document order number: 9397 750 13887
Features
• Utilizes the AVR® RISC Architecture
• AVR – High-performance and Low-power RISC Architecture
– 120 Powerful Instructions – Most Single Clock Cycle Execution
– 32 x 8 General Purpose Working Registers
– Fully Static Operation
– Up to 20 MIPS Throughput at 20 MHz
• Data and Non-volatile Program and Data Memories
– 2K Bytes of In-System Self Programmable Flash
Endurance 10,000 Write/Erase Cycles
– 128 Bytes In-System Programmable EEPROM
Endurance: 100,000 Write/Erase Cycles
– 128 Bytes Internal SRAM
– Programming Lock for Flash Program and EEPROM Data Security
• Peripheral Features
– One 8-bit Timer/Counter with Separate Prescaler and Compare Mode
– One 16-bit Timer/Counter with Separate Prescaler, Compare and Capture Modes
– Four PWM Channels
– On-chip Analog Comparator
– Programmable Watchdog Timer with On-chip Oscillator
– USI – Universal Serial Interface
– Full Duplex USART
• Special Microcontroller Features
– debugWIRE On-chip Debugging
– In-System Programmable via SPI Port
– External and Internal Interrupt Sources
– Low-power Idle, Power-down, and Standby Modes
– Enhanced Power-on Reset Circuit
– Programmable Brown-out Detection Circuit
– Internal Calibrated Oscillator
• I/O and Packages
– 18 Programmable I/O Lines
– 20-pin PDIP, 20-pin SOIC, 20-pad QFN/MLF
• Operating Voltages
– 1.8 – 5.5V (ATtiny2313V)
– 2.7 – 5.5V (ATtiny2313)
• Speed Grades
– ATtiny2313V: 0 – 4 MHz @ 1.8 - 5.5V, 0 – 10 MHz @ 2.7 – 5.5V
– ATtiny2313: 0 – 10 MHz @ 2.7 - 5.5V, 0 – 20 MHz @ 4.5 – 5.5V
• Typical Power Consumption
– Active Mode
1 MHz, 1.8V: 230 µA
32 kHz, 1.8V: 20 µA (including oscillator)
– Power-down Mode
< 0.1 µA at 1.8V
8-bit
Microcontroller
with 2K Bytes
In-System
Programmable
Flash
ATtiny2313/V
Preliminary
Rev. 2543L–AVR–08/102
2543L–AVR–08/10
ATtiny2313
Pin
Configurations
Figure 1. Pinout ATtiny2313
Overview The ATtiny2313 is a low-power CMOS 8-bit microcontroller based on the AVR enhanced RISC
architecture. By executing powerful instructions in a single clock cycle, the ATtiny2313 achieves
throughputs approaching 1 MIPS per MHz allowing the system designer to optimize power consumption
versus processing speed.
(RESET/dW) PA2
(RXD) PD0
(TXD) PD1
(XTAL2) PA1
(XTAL1) PA0
(CKOUT/XCK/INT0) PD2
(INT1) PD3
(T0) PD4
(OC0B/T1) PD5
GND
20
19
18
17
16
15
14
13
12
11
1
2
3
4
5
6
7
8
9
10
VCC
PB7 (UCSK/SCL/PCINT7)
PB6 (MISO/DO/PCINT6)
PB5 (MOSI/DI/SDA/PCINT5)
PB4 (OC1B/PCINT4)
PB3 (OC1A/PCINT3)
PB2 (OC0A/PCINT2)
PB1 (AIN1/PCINT1)
PB0 (AIN0/PCINT0)
PD6 (ICP)
PDIP/SOIC
1
2
3
4
5
MLF
15
14
13
12
11
20
19
18
17
16
6
7
8
9
10
(TXD) PD1
XTAL2) PA1
(XTAL1) PA0
(CKOUT/XCK/INT0) PD2
(INT1) PD3
(T0) PD4
(OC0B/T1) PD5
GND
(ICP) PD6
(AIN0/PCINT0) PB0
PB5 (MOSI/DI/SDA/PCINT5)
PB4 (OC1B/PCINT4)
PB3 (OC1A/PCINT3)
PB2 (OC0A/PCINT2)
PB1 (AIN1/PCINT1)
PD0 (RXD)
PA2 (RESET/dW)
VCC
PB7 (UCSK/SCK/PCINT7)
PB6 (MISO/DO/PCINT6)
NOTE: Bottom pad should be soldered to ground.3
2543L–AVR–08/10
ATtiny2313
Block Diagram
Figure 2. Block Diagram
PROGRAM
COUNTER
PROGRAM
FLASH
INSTRUCTION
REGISTER
GND
VCC
INSTRUCTION
DECODER
CONTROL
LINES
STACK
POINTER
SRAM
GENERAL
PURPOSE
REGISTER
ALU
STATUS
REGISTER
PROGRAMMING
LOGIC SPI
8-BIT DATA BUS
XTAL1 XTAL2
RESET
INTERNAL
OSCILLATOR
OSCILLATOR
WATCHDOG
TIMER
TIMING AND
CONTROL
MCU CONTROL
REGISTER
MCU STATUS
REGISTER
TIMER/
COUNTERS
INTERRUPT
UNIT
EEPROM
USI
USART
ANALOG
COMPARATOR
DATA REGISTER
PORTB
DATA DIR.
REG. PORTB
DATA REGISTER
PORTA
DATA DIR.
REG. PORTA
PORTB DRIVERS
PB0 - PB7
PORTA DRIVERS
PA0 - PA2
DATA REGISTER
PORTD
DATA DIR.
REG. PORTD
PORTD DRIVERS
PD0 - PD6
ON-CHIP
DEBUGGER
INTERNAL
CALIBRATED
OSCILLATOR4
2543L–AVR–08/10
ATtiny2313
The AVR core combines a rich instruction set with 32 general purpose working registers. All the
32 registers are directly connected to the Arithmetic Logic Unit (ALU), allowing two independent
registers to be accessed in one single instruction executed in one clock cycle. The resulting
architecture is more code efficient while achieving throughputs up to ten times faster than conventional
CISC microcontrollers.
The ATtiny2313 provides the following features: 2K bytes of In-System Programmable Flash,
128 bytes EEPROM, 128 bytes SRAM, 18 general purpose I/O lines, 32 general purpose working
registers, a single-wire Interface for On-chip Debugging, two flexible Timer/Counters with
compare modes, internal and external interrupts, a serial programmable USART, Universal
Serial Interface with Start Condition Detector, a programmable Watchdog Timer with internal
Oscillator, and three software selectable power saving modes. The Idle mode stops the CPU
while allowing the SRAM, Timer/Counters, and interrupt system to continue functioning. The
Power-down mode saves the register contents but freezes the Oscillator, disabling all other chip
functions until the next interrupt or hardware reset. In Standby mode, the crystal/resonator Oscillator
is running while the rest of the device is sleeping. This allows very fast start-up combined
with low-power consumption.
The device is manufactured using Atmel’s high density non-volatile memory technology. The
On-chip ISP Flash allows the program memory to be reprogrammed In-System through an SPI
serial interface, or by a conventional non-volatile memory programmer. By combining an 8-bit
RISC CPU with In-System Self-Programmable Flash on a monolithic chip, the Atmel ATtiny2313
is a powerful microcontroller that provides a highly flexible and cost effective solution to many
embedded control applications.
The ATtiny2313 AVR is supported with a full suite of program and system development tools
including: C Compilers, Macro Assemblers, Program Debugger/Simulators, In-Circuit Emulators,
and Evaluation kits.5
2543L–AVR–08/10
ATtiny2313
Pin Descriptions
VCC Digital supply voltage.
GND Ground.
Port A (PA2..PA0) Port A is a 3-bit bi-directional I/O port with internal pull-up resistors (selected for each bit). The
Port A output buffers have symmetrical drive characteristics with both high sink and source
capability. As inputs, Port A pins that are externally pulled low will source current if the pull-up
resistors are activated. The Port A pins are tri-stated when a reset condition becomes active,
even if the clock is not running.
Port A also serves the functions of various special features of the ATtiny2313 as listed on page
53.
Port B (PB7..PB0) Port B is an 8-bit bi-directional I/O port with internal pull-up resistors (selected for each bit). The
Port B output buffers have symmetrical drive characteristics with both high sink and source
capability. As inputs, Port B pins that are externally pulled low will source current if the pull-up
resistors are activated. The Port B pins are tri-stated when a reset condition becomes active,
even if the clock is not running.
Port B also serves the functions of various special features of the ATtiny2313 as listed on page
53.
Port D (PD6..PD0) Port D is a 7-bit bi-directional I/O port with internal pull-up resistors (selected for each bit). The
Port D output buffers have symmetrical drive characteristics with both high sink and source
capability. As inputs, Port D pins that are externally pulled low will source current if the pull-up
resistors are activated. The Port D pins are tri-stated when a reset condition becomes active,
even if the clock is not running.
Port D also serves the functions of various special features of the ATtiny2313 as listed on page
56.
RESET Reset input. A low level on this pin for longer than the minimum pulse length will generate a
reset, even if the clock is not running. The minimum pulse length is given in Table 15 on page
34. Shorter pulses are not guaranteed to generate a reset. The Reset Input is an alternate function
for PA2 and dW.
XTAL1 Input to the inverting Oscillator amplifier and input to the internal clock operating circuit. XTAL1
is an alternate function for PA0.
XTAL2 Output from the inverting Oscillator amplifier. XTAL2 is an alternate function for PA1.6
2543L–AVR–08/10
ATtiny2313
General
Information
Resources A comprehensive set of development tools, application notes and datasheets are available for
downloadon http://www.atmel.com/avr.
Code Examples This documentation contains simple code examples that briefly show how to use various parts of
the device. These code examples assume that the part specific header file is included before
compilation. Be aware that not all C compiler vendors include bit definitions in the header files
and interrupt handling in C is compiler dependent. Please confirm with the C compiler documentation
for more details.
Disclaimer Typical values contained in this data sheet are based on simulations and characterization of
other AVR microcontrollers manufactured on the same process technology. Min and Max values
will be available after the device is characterized.7
2543L–AVR–08/10
ATtiny2313
AVR CPU Core
Introduction This section discusses the AVR core architecture in general. The main function of the CPU core
is to ensure correct program execution. The CPU must therefore be able to access memories,
perform calculations, control peripherals, and handle interrupts.
Architectural
Overview
Figure 3. Block Diagram of the AVR Architecture
In order to maximize performance and parallelism, the AVR uses a Harvard architecture – with
separate memories and buses for program and data. Instructions in the program memory are
executed with a single level pipelining. While one instruction is being executed, the next instruction
is pre-fetched from the program memory. This concept enables instructions to be executed
in every clock cycle. The program memory is In-System Reprogrammable Flash memory.
The fast-access Register File contains 32 x 8-bit general purpose working registers with a single
clock cycle access time. This allows single-cycle Arithmetic Logic Unit (ALU) operation. In a typical
ALU operation, two operands are output from the Register File, the operation is executed,
and the result is stored back in the Register File – in one clock cycle.
Flash
Program
Memory
Instruction
Register
Instruction
Decoder
Program
Counter
Control Lines
32 x 8
General
Purpose
Registrers
ALU
Status
and Control
I/O Lines
EEPROM
Data Bus 8-bit
Data
SRAM
Direct Addressing
Indirect Addressing
Interrupt
Unit
SPI
Unit
Watchdog
Timer
Analog
Comparator
I/O Module 2
I/O Module1
I/O Module n8
2543L–AVR–08/10
ATtiny2313
Six of the 32 registers can be used as three 16-bit indirect address register pointers for Data
Space addressing – enabling efficient address calculations. One of the these address pointers
can also be used as an address pointer for look up tables in Flash program memory. These
added function registers are the 16-bit X-, Y-, and Z-register, described later in this section.
The ALU supports arithmetic and logic operations between registers or between a constant and
a register. Single register operations can also be executed in the ALU. After an arithmetic operation,
the Status Register is updated to reflect information about the result of the operation.
Program flow is provided by conditional and unconditional jump and call instructions, able to
directly address the whole address space. Most AVR instructions have a single 16-bit word format.
Every program memory address contains a 16- or 32-bit instruction.
During interrupts and subroutine calls, the return address Program Counter (PC) is stored on the
Stack. The Stack is effectively allocated in the general data SRAM, and consequently the Stack
size is only limited by the total SRAM size and the usage of the SRAM. All user programs must
initialize the SP in the Reset routine (before subroutines or interrupts are executed). The Stack
Pointer (SP) is read/write accessible in the I/O space. The data SRAM can easily be accessed
through the five different addressing modes supported in the AVR architecture.
The memory spaces in the AVR architecture are all linear and regular memory maps.
A flexible interrupt module has its control registers in the I/O space with an additional Global
Interrupt Enable bit in the Status Register. All interrupts have a separate Interrupt Vector in the
Interrupt Vector table. The interrupts have priority in accordance with their Interrupt Vector position.
The lower the Interrupt Vector address, the higher the priority.
The I/O memory space contains 64 addresses for CPU peripheral functions as Control Registers,
and other I/O functions. The I/O Memory can be accessed directly, or as the Data Space
locations following those of the Register File, 0x20 - 0x5F.
ALU – Arithmetic
Logic Unit
The high-performance AVR ALU operates in direct connection with all the 32 general purpose
working registers. Within a single clock cycle, arithmetic operations between general purpose
registers or between a register and an immediate are executed. The ALU operations are divided
into three main categories – arithmetic, logical, and bit-functions. Some implementations of the
architecture also provide a powerful multiplier supporting both signed/unsigned multiplication
and fractional format. See the “Instruction Set” section for a detailed description.
Status Register The Status Register contains information about the result of the most recently executed arithmetic
instruction. This information can be used for altering program flow in order to perform
conditional operations. Note that the Status Register is updated after all ALU operations, as
specified in the Instruction Set Reference. This will in many cases remove the need for using the
dedicated compare instructions, resulting in faster and more compact code.
The Status Register is not automatically stored when entering an interrupt routine and restored
when returning from an interrupt. This must be handled by software.9
2543L–AVR–08/10
ATtiny2313
The AVR Status Register – SREG – is defined as:
• Bit 7 – I: Global Interrupt Enable
The Global Interrupt Enable bit must be set for the interrupts to be enabled. The individual interrupt
enable control is then performed in separate control registers. If the Global Interrupt Enable
Register is cleared, none of the interrupts are enabled independent of the individual interrupt
enable settings. The I-bit is cleared by hardware after an interrupt has occurred, and is set by
the RETI instruction to enable subsequent interrupts. The I-bit can also be set and cleared by
the application with the SEI and CLI instructions, as described in the instruction set reference.
• Bit 6 – T: Bit Copy Storage
The Bit Copy instructions BLD (Bit LoaD) and BST (Bit STore) use the T-bit as source or destination
for the operated bit. A bit from a register in the Register File can be copied into T by the
BST instruction, and a bit in T can be copied into a bit in a register in the Register File by the
BLD instruction.
• Bit 5 – H: Half Carry Flag
The Half Carry Flag H indicates a Half Carry in some arithmetic operations. Half Carry Is useful
in BCD arithmetic. See the “Instruction Set Description” for detailed information.
• Bit 4 – S: Sign Bit, S = N ⊕ V
The S-bit is always an exclusive or between the negative flag N and the Two’s Complement
Overflow Flag V. See the “Instruction Set Description” for detailed information.
• Bit 3 – V: Two’s Complement Overflow Flag
The Two’s Complement Overflow Flag V supports two’s complement arithmetics. See the
“Instruction Set Description” for detailed information.
• Bit 2 – N: Negative Flag
The Negative Flag N indicates a negative result in an arithmetic or logic operation. See the
“Instruction Set Description” for detailed information.
• Bit 1 – Z: Zero Flag
The Zero Flag Z indicates a zero result in an arithmetic or logic operation. See the “Instruction
Set Description” for detailed information.
• Bit 0 – C: Carry Flag
The Carry Flag C indicates a carry in an arithmetic or logic operation. See the “Instruction Set
Description” for detailed information.
General Purpose
Register File
The Register File is optimized for the AVR Enhanced RISC instruction set. In order to achieve
the required performance and flexibility, the following input/output schemes are supported by the
Register File:
• One 8-bit output operand and one 8-bit result input
• Two 8-bit output operands and one 8-bit result input
• Two 8-bit output operands and one 16-bit result input
• One 16-bit output operand and one 16-bit result input
Figure 4 shows the structure of the 32 general purpose working registers in the CPU.
Bit 7 6 5 4 3 2 1 0
I T H S V N Z C SREG
Read/Write R/W R/W R/W R/W R/W R/W R/W R/W
Initial Value 0 0 0 0 0 0 0 010
2543L–AVR–08/10
ATtiny2313
Figure 4. AVR CPU General Purpose Working Registers
Most of the instructions operating on the Register File have direct access to all registers, and
most of them are single cycle instructions.
As shown in Figure 4, each register is also assigned a data memory address, mapping them
directly into the first 32 locations of the user Data Space. Although not being physically implemented
as SRAM locations, this memory organization provides great flexibility in access of the
registers, as the X-, Y- and Z-pointer registers can be set to index any register in the file.
The X-register, Yregister,
and Z-register
The registers R26..R31 have some added functions to their general purpose usage. These registers
are 16-bit address pointers for indirect addressing of the data space. The three indirect
address registers X, Y, and Z are defined as described in Figure 5.
Figure 5. The X-, Y-, and Z-registers
In the different addressing modes these address registers have functions as fixed displacement,
automatic increment, and automatic decrement (see the instruction set reference for details).
7 0 Addr.
R0 0x00
R1 0x01
R2 0x02
…
R13 0x0D
General R14 0x0E
Purpose R15 0x0F
Working R16 0x10
Registers R17 0x11
…
R26 0x1A X-register Low Byte
R27 0x1B X-register High Byte
R28 0x1C Y-register Low Byte
R29 0x1D Y-register High Byte
R30 0x1E Z-register Low Byte
R31 0x1F Z-register High Byte
15 XH XL 0
X-register 7 0 7 0
R27 (0x1B) R26 (0x1A)
15 YH YL 0
Y-register 7 0 7 0
R29 (0x1D) R28 (0x1C)
15 ZH ZL 0
Z-register 7 0 7 0
R31 (0x1F) R30 (0x1E)11
2543L–AVR–08/10
ATtiny2313
Stack Pointer The Stack is mainly used for storing temporary data, for storing local variables and for storing
return addresses after interrupts and subroutine calls. The Stack Pointer Register always points
to the top of the Stack. Note that the Stack is implemented as growing from higher memory locations
to lower memory locations. This implies that a Stack PUSH command decreases the Stack
Pointer.
The Stack Pointer points to the data SRAM Stack area where the Subroutine and Interrupt
Stacks are located. This Stack space in the data SRAM must be defined by the program before
any subroutine calls are executed or interrupts are enabled. The Stack Pointer must be set to
point above 0x60. The Stack Pointer is decremented by one when data is pushed onto the Stack
with the PUSH instruction, and it is decremented by two when the return address is pushed onto
the Stack with subroutine call or interrupt. The Stack Pointer is incremented by one when data is
popped from the Stack with the POP instruction, and it is incremented by two when data is
popped from the Stack with return from subroutine RET or return from interrupt RETI.
The AVR Stack Pointer is implemented as two 8-bit registers in the I/O space. The number of
bits actually used is implementation dependent. Note that the data space in some implementations
of the AVR architecture is so small that only SPL is needed. In this case, the SPH Register
will not be present.
Instruction
Execution Timing
This section describes the general access timing concepts for instruction execution. The AVR
CPU is driven by the CPU clock clkCPU, directly generated from the selected clock source for the
chip. No internal clock division is used.
Figure 6 shows the parallel instruction fetches and instruction executions enabled by the Harvard
architecture and the fast-access Register File concept. This is the basic pipelining concept
to obtain up to 1 MIPS per MHz with the corresponding unique results for functions per cost,
functions per clocks, and functions per power-unit.
Figure 6. The Parallel Instruction Fetches and Instruction Executions
Figure 7 shows the internal timing concept for the Register File. In a single clock cycle an ALU
operation using two register operands is executed, and the result is stored back to the destination
register.
Bit 15 14 13 12 11 10 9 8
– – – – – – – – SPH
SP7 SP6 SP5 SP4 SP3 SP2 SP1 SP0 SPL
76543210
Read/Write R R R R R R R R
R/W R/W R/W R/W R/W R/W R/W R/W
Initial Value RAMEND RAMEND RAMEND RAMEND RAMEND RAMEND RAMEND RAMEND
RAMEND RAMEND RAMEND RAMEND RAMEND RAMEND RAMEND RAMEND
clk
1st Instruction Fetch
1st Instruction Execute
2nd Instruction Fetch
2nd Instruction Execute
3rd Instruction Fetch
3rd Instruction Execute
4th Instruction Fetch
T1 T2 T3 T4
CPU12
2543L–AVR–08/10
ATtiny2313
Figure 7. Single Cycle ALU Operation
Reset and
Interrupt Handling
The AVR provides several different interrupt sources. These interrupts and the separate Reset
Vector each have a separate program vector in the program memory space. All interrupts are
assigned individual enable bits which must be written logic one together with the Global Interrupt
Enable bit in the Status Register in order to enable the interrupt.
The lowest addresses in the program memory space are by default defined as the Reset and
Interrupt Vectors. The complete list of vectors is shown in “Interrupts” on page 44. The list also
determines the priority levels of the different interrupts. The lower the address the higher is the
priority level. RESET has the highest priority, and next is INT0 – the External Interrupt Request
0. Refer to “Interrupts” on page 44 for more information.
When an interrupt occurs, the Global Interrupt Enable I-bit is cleared and all interrupts are disabled.
The user software can write logic one to the I-bit to enable nested interrupts. All enabled
interrupts can then interrupt the current interrupt routine. The I-bit is automatically set when a
Return from Interrupt instruction – RETI – is executed.
There are basically two types of interrupts. The first type is triggered by an event that sets the
interrupt flag. For these interrupts, the Program Counter is vectored to the actual Interrupt Vector
in order to execute the interrupt handling routine, and hardware clears the corresponding interrupt
flag. Interrupt flags can also be cleared by writing a logic one to the flag bit position(s) to be
cleared. If an interrupt condition occurs while the corresponding interrupt enable bit is cleared,
the interrupt flag will be set and remembered until the interrupt is enabled, or the flag is cleared
by software. Similarly, if one or more interrupt conditions occur while the Global Interrupt Enable
bit is cleared, the corresponding interrupt flag(s) will be set and remembered until the Global
Interrupt Enable bit is set, and will then be executed by order of priority.
The second type of interrupts will trigger as long as the interrupt condition is present. These
interrupts do not necessarily have interrupt flags. If the interrupt condition disappears before the
interrupt is enabled, the interrupt will not be triggered.
When the AVR exits from an interrupt, it will always return to the main program and execute one
more instruction before any pending interrupt is served.
Note that the Status Register is not automatically stored when entering an interrupt routine, nor
restored when returning from an interrupt routine. This must be handled by software.
When using the CLI instruction to disable interrupts, the interrupts will be immediately disabled.
No interrupt will be executed after the CLI instruction, even if it occurs simultaneously with the
Total Execution Time
Register Operands Fetch
ALU Operation Execute
Result Write Back
T1 T2 T3 T4
clkCPU13
2543L–AVR–08/10
ATtiny2313
CLI instruction. The following example shows how this can be used to avoid interrupts during the
timed EEPROM write sequence..
When using the SEI instruction to enable interrupts, the instruction following SEI will be executed
before any pending interrupts, as shown in this example.
Interrupt Response
Time
The interrupt execution response for all the enabled AVR interrupts is four clock cycles minimum.
After four clock cycles the program vector address for the actual interrupt handling routine
is executed. During this four clock cycle period, the Program Counter is pushed onto the Stack.
The vector is normally a jump to the interrupt routine, and this jump takes three clock cycles. If
an interrupt occurs during execution of a multi-cycle instruction, this instruction is completed
before the interrupt is served. If an interrupt occurs when the MCU is in sleep mode, the interrupt
execution response time is increased by four clock cycles. This increase comes in addition to the
start-up time from the selected sleep mode.
A return from an interrupt handling routine takes four clock cycles. During these four clock
cycles, the Program Counter (two bytes) is popped back from the Stack, the Stack Pointer is
incremented by two, and the I-bit in SREG is set.
Assembly Code Example
in r16, SREG ; store SREG value
cli ; disable interrupts during timed sequence
sbi EECR, EEMPE ; start EEPROM write
sbi EECR, EEPE
out SREG, r16 ; restore SREG value (I-bit)
C Code Example
char cSREG;
cSREG = SREG; /* store SREG value */
/* disable interrupts during timed sequence */
__disable_interrupt();
EECR |= (1< xxx
... ... ... ... 46
2543L–AVR–08/10
ATtiny2313
I/O-Ports
Introduction All AVR ports have true Read-Modify-Write functionality when used as general digital I/O ports.
This means that the direction of one port pin can be changed without unintentionally changing
the direction of any other pin with the SBI and CBI instructions. The same applies when changing
drive value (if configured as output) or enabling/disabling of pull-up resistors (if configured as
input). Each output buffer has symmetrical drive characteristics with both high sink and source
capability. The pin driver is strong enough to drive LED displays directly. All port pins have individually
selectable pull-up resistors with a supply-voltage invariant resistance. All I/O pins have
protection diodes to both VCC and Ground as indicated in Figure 21. Refer to “Electrical Characteristics”
on page 177 for a complete list of parameters.
Figure 21. I/O Pin Equivalent Schematic
All registers and bit references in this section are written in general form. A lower case “x” represents
the numbering letter for the port, and a lower case “n” represents the bit number. However,
when using the register or bit defines in a program, the precise form must be used. For example,
PORTB3 for bit no. 3 in Port B, here documented generally as PORTxn. The physical I/O Registers
and bit locations are listed in “Register Description for I/O-Ports” on page 58.
Three I/O memory address locations are allocated for each port, one each for the Data Register
– PORTx, Data Direction Register – DDRx, and the Port Input Pins – PINx. The Port Input Pins
I/O location is read only, while the Data Register and the Data Direction Register are read/write.
However, writing a logic one to a bit in the PINx Register, will result in a toggle in the corresponding
bit in the Data Register. In addition, the Pull-up Disable – PUD bit in MCUCR disables the
pull-up function for all pins in all ports when set.
Using the I/O port as General Digital I/O is described in “Ports as General Digital I/O” on page
47. Most port pins are multiplexed with alternate functions for the peripheral features on the
device. How each alternate function interferes with the port pin is described in “Alternate Port
Functions” on page 51. Refer to the individual module sections for a full description of the alternate
functions.
Note that enabling the alternate function of some of the port pins does not affect the use of the
other pins in the port as general digital I/O.
Cpin
Logic
Rpu
See Figure
"General Digital I/O" for
Details
Pxn47
2543L–AVR–08/10
ATtiny2313
Ports as General
Digital I/O
The ports are bi-directional I/O ports with optional internal pull-ups. Figure 22 shows a functional
description of one I/O-port pin, here generically called Pxn.
Figure 22. General Digital I/O(1)
Note: 1. WRx, WPx, WDx, RRx, RPx, and RDx are common to all pins within the same port. clkI/O,
SLEEP, and PUD are common to all ports.
Configuring the Pin Each port pin consists of three register bits: DDxn, PORTxn, and PINxn. As shown in “Register
Description for I/O-Ports” on page 58, the DDxn bits are accessed at the DDRx I/O address, the
PORTxn bits at the PORTx I/O address, and the PINxn bits at the PINx I/O address.
The DDxn bit in the DDRx Register selects the direction of this pin. If DDxn is written logic one,
Pxn is configured as an output pin. If DDxn is written logic zero, Pxn is configured as an input
pin.
If PORTxn is written logic one when the pin is configured as an input pin, the pull-up resistor is
activated. To switch the pull-up resistor off, PORTxn has to be written logic zero or the pin has to
be configured as an output pin. The port pins are tri-stated when reset condition becomes active,
even if no clocks are running.
If PORTxn is written logic one when the pin is configured as an output pin, the port pin is driven
high (one). If PORTxn is written logic zero when the pin is configured as an output pin, the port
pin is driven low (zero).
Toggling the Pin Writing a logic one to PINxn toggles the value of PORTxn, independent on the value of DDRxn.
Note that the SBI instruction can be used to toggle one single bit in a port.
clk
RPx
RRx
RDx
WDx
PUD
SYNCHRONIZER
WDx: WRITE DDRx
WRx: WRITE PORTx
RRx: READ PORTx REGISTER
RPx: READ PORTx PIN
PUD: PULLUP DISABLE
clkI/O: I/O CLOCK
RDx: READ DDRx
D
L
Q
Q
RESET
RESET
Q
D Q
Q
Q D
CLR
PORTxn
Q
Q D
CLR
DDxn
PINxn
DATA BUS
SLEEP
SLEEP: SLEEP CONTROL
Pxn
I/O
WPx
0
1
WRx
WPx: WRITE PINx REGISTER48
2543L–AVR–08/10
ATtiny2313
Switching Between
Input and Output
When switching between tri-state ({DDxn, PORTxn} = 0b00) and output high ({DDxn, PORTxn}
= 0b11), an intermediate state with either pull-up enabled {DDxn, PORTxn} = 0b01) or output
low ({DDxn, PORTxn} = 0b10) must occur. Normally, the pull-up enabled state is fully acceptable,
as a high-impedant environment will not notice the difference between a strong high driver
and a pull-up. If this is not the case, the PUD bit in the MCUCR Register can be set to disable all
pull-ups in all ports.
Switching between input with pull-up and output low generates the same problem. The user
must use either the tri-state ({DDxn, PORTxn} = 0b00) or the output high state ({DDxn, PORTxn}
= 0b11) as an intermediate step.
Table 22 summarizes the control signals for the pin value.
Reading the Pin Value Independent of the setting of Data Direction bit DDxn, the port pin can be read through the
PINxn Register bit. As shown in Figure 22, the PINxn Register bit and the preceding latch constitute
a synchronizer. This is needed to avoid metastability if the physical pin changes value near
the edge of the internal clock, but it also introduces a delay. Figure 23 shows a timing diagram of
the synchronization when reading an externally applied pin value. The maximum and minimum
propagation delays are denoted tpd,max and tpd,min respectively.
Figure 23. Synchronization when Reading an Externally Applied Pin value
Table 22. Port Pin Configurations
DDxn PORTxn
PUD
(in MCUCR) I/O Pull-up Comment
0 0 X Input No Tri-state (Hi-Z)
0 1 0 Input Yes
Pxn will source current if ext. pulled
low.
0 1 1 Input No Tri-state (Hi-Z)
1 0 X Output No Output Low (Sink)
1 1 X Output No Output High (Source)
XXX in r17, PINx
0x00 0xFF
INSTRUCTIONS
SYNC LATCH
PINxn
r17
XXX
SYSTEM CLK
tpd, max
tpd, min49
2543L–AVR–08/10
ATtiny2313
Consider the clock period starting shortly after the first falling edge of the system clock. The latch
is closed when the clock is low, and goes transparent when the clock is high, as indicated by the
shaded region of the “SYNC LATCH” signal. The signal value is latched when the system clock
goes low. It is clocked into the PINxn Register at the succeeding positive clock edge. As indicated
by the two arrows tpd,max and tpd,min, a single signal transition on the pin will be delayed
between ½ and 1½ system clock period depending upon the time of assertion.
When reading back a software assigned pin value, a nop instruction must be inserted as indicated
in Figure 24. The out instruction sets the “SYNC LATCH” signal at the positive edge of the
clock. In this case, the delay tpd through the synchronizer is 1 system clock period.
Figure 24. Synchronization when Reading a Software Assigned Pin Value
out PORTx, r16 nop in r17, PINx
0xFF
0x00 0xFF
SYSTEM CLK
r16
INSTRUCTIONS
SYNC LATCH
PINxn
r17
t pd50
2543L–AVR–08/10
ATtiny2313
The following code example shows how to set port B pins 0 and 1 high, 2 and 3 low, and define
the port pins from 4 to 7 as input with pull-ups assigned to port pins 6 and 7. The resulting pin
values are read back again, but as previously discussed, a nop instruction is included to be able
to read back the value recently assigned to some of the pins.
Note: 1. For the assembly program, two temporary registers are used to minimize the time from pullups
are set on pins 0, 1, 6, and 7, until the direction bits are correctly set, defining bit 2 and 3
as low and redefining bits 0 and 1 as strong high drivers.
Digital Input Enable
and Sleep Modes
As shown in Figure 22, the digital input signal can be clamped to ground at the input of the
Schmitt Trigger. The signal denoted SLEEP in the figure, is set by the MCU Sleep Controller in
Power-down mode, and Standby mode to avoid high power consumption if some input signals
are left floating, or have an analog signal level close to VCC/2.
SLEEP is overridden for port pins enabled as external interrupt pins. If the external interrupt
request is not enabled, SLEEP is active also for these pins. SLEEP is also overridden by various
other alternate functions as described in “Alternate Port Functions” on page 51.
If a logic high level (“one”) is present on an asynchronous external interrupt pin configured as
“Interrupt on Rising Edge, Falling Edge, or Any Logic Change on Pin” while the external interrupt
is not enabled, the corresponding External Interrupt Flag will be set when resuming from the
above mentioned Sleep mode, as the clamping in these sleep mode produces the requested
logic change.
Assembly Code Example(1)
...
; Define pull-ups and set outputs high
; Define directions for port pins
ldi r16,(1< CSn2:0 > 1). The number of system clock
cycles from when the timer is enabled to the first count occurs can be from 1 to N+1 system
clock cycles, where N equals the prescaler divisor (8, 64, 256, or 1024).
It is possible to use the prescaler reset for synchronizing the Timer/Counter to program execution.
However, care must be taken if the other Timer/Counter that shares the same prescaler
also uses prescaling. A prescaler reset will affect the prescaler period for all Timer/Counters it is
connected to.
External Clock Source An external clock source applied to the T1/T0 pin can be used as Timer/Counter clock
(clkT1/clkT0). The T1/T0 pin is sampled once every system clock cycle by the pin synchronization
logic. The synchronized (sampled) signal is then passed through the edge detector. Figure 38
shows a functional equivalent block diagram of the T1/T0 synchronization and edge detector
logic. The registers are clocked at the positive edge of the internal system clock (clkI/O). The latch
is transparent in the high period of the internal system clock.
The edge detector generates one clkT1/clkT0 pulse for each positive (CSn2:0 = 7) or negative
(CSn2:0 = 6) edge it detects.
Figure 38. T1/T0 Pin Sampling
The synchronization and edge detector logic introduces a delay of 2.5 to 3.5 system clock cycles
from an edge has been applied to the T1/T0 pin to the counter is updated.
Enabling and disabling of the clock input must be done when T1/T0 has been stable for at least
one system clock cycle, otherwise it is a risk that a false Timer/Counter clock pulse is generated.
Each half period of the external clock applied must be longer than one system clock cycle to
ensure correct sampling. The external clock must be guaranteed to have less than half the system
clock frequency (fExtClk < fclk_I/O/2) given a 50/50% duty cycle. Since the edge detector uses
sampling, the maximum frequency of an external clock it can detect is half the sampling freTn_sync
(To Clock
Select Logic)
Synchronization Edge Detector
D Q D Q
LE
Tn D Q
clkI/O81
2543L–AVR–08/10
ATtiny2313
quency (Nyquist sampling theorem). However, due to variation of the system clock frequency
and duty cycle caused by Oscillator source (crystal, resonator, and capacitors) tolerances, it is
recommended that maximum frequency of an external clock source is less than fclk_I/O/2.5.
An external clock source can not be prescaled.
Figure 39. Prescaler for Timer/Counter0 and Timer/Counter1(1)
Note: 1. The synchronization logic on the input pins (T1/T0) is shown in Figure 38.
General Timer/Counter
Control Register –
GTCCR
• Bits 7..1 – Res: Reserved Bits
These bits are reserved bits in the ATtiny2313 and will always read as zero.
• Bit 0 – PSR10: Prescaler Reset Timer/Counter1 and Timer/Counter0
When this bit is one, Timer/Counter1 and Timer/Counter0 prescaler will be Reset. This bit is normally
cleared immediately by hardware. Note that Timer/Counter1 and Timer/Counter0 share
the same prescaler and a reset of this prescaler will affect both timers.
PSR10
Clear
clkT1 clkT0
T1
T0
clkI/O
Synchronization
Synchronization
Bit 7 6 5 4 3 2 1 0
— – – – – – — PSR10 GTCCR
Read/Write R R R R R R R R/W
Initial Value 0 0 0 0 0 0 0 082
2543L–AVR–08/10
ATtiny2313
16-bit
Timer/Counter1
The 16-bit Timer/Counter unit allows accurate program execution timing (event management),
wave generation, and signal timing measurement. The main features are:
• True 16-bit Design (i.e., Allows 16-bit PWM)
• Two independent Output Compare Units
• Double Buffered Output Compare Registers
• One Input Capture Unit
• Input Capture Noise Canceler
• Clear Timer on Compare Match (Auto Reload)
• Glitch-free, Phase Correct Pulse Width Modulator (PWM)
• Variable PWM Period
• Frequency Generator
• External Event Counter
• Four independent interrupt Sources (TOV1, OCF1A, OCF1B, and ICF1)
Overview Most register and bit references in this section are written in general form. A lower case “n”
replaces the Timer/Counter number, and a lower case “x” replaces the Output Compare unit
channel. However, when using the register or bit defines in a program, the precise form must be
used, i.e., TCNT1 for accessing Timer/Counter1 counter value and so on.
A simplified block diagram of the 16-bit Timer/Counter is shown in Figure 40. For the actual
placement of I/O pins, refer to “Pinout ATtiny2313” on page 2. CPU accessible I/O Registers,
including I/O bits and I/O pins, are shown in bold. The device-specific I/O Register and bit locations
are listed in the “16-bit Timer/Counter Register Description” on page 104.
Figure 40. 16-bit Timer/Counter Block Diagram(1)
Note: 1. Refer to Figure 1 on page 2 for Timer/Counter1 pin placement and description.
Clock Select
Timer/Counter
DATA BUS
OCRnA
OCRnB
ICRn
=
=
TCNTn
Waveform
Generation
Waveform
Generation
OCnA
OCnB
Noise
Canceler
ICPn
=
Fixed
TOP
Values
Edge
Detector
Control Logic
= 0
TOP BOTTOM
Count
Clear
Direction
TOVn
(Int.Req.)
OCnA
(Int.Req.)
OCnB
(Int.Req.)
ICFn (Int.Req.)
TCCRnA TCCRnB
( From Analog
Comparator Ouput )
Tn Edge
Detector
( From Prescaler )
clkTn83
2543L–AVR–08/10
ATtiny2313
Registers The Timer/Counter (TCNT1), Output Compare Registers (OCR1A/B), and Input Capture Register
(ICR1) are all 16-bit registers. Special procedures must be followed when accessing the 16-
bit registers. These procedures are described in the section “Accessing 16-bit Registers” on
page 84. The Timer/Counter Control Registers (TCCR1A/B) are 8-bit registers and have no CPU
access restrictions. Interrupt requests (abbreviated to Int.Req. in the figure) signals are all visible
in the Timer Interrupt Flag Register (TIFR). All interrupts are individually masked with the Timer
Interrupt Mask Register (TIMSK). TIFR and TIMSK are not shown in the figure.
The Timer/Counter can be clocked internally, via the prescaler, or by an external clock source on
the T1 pin. The Clock Select logic block controls which clock source and edge the Timer/Counter
uses to increment (or decrement) its value. The Timer/Counter is inactive when no clock source
is selected. The output from the Clock Select logic is referred to as the timer clock (clkT1).
The double buffered Output Compare Registers (OCR1A/B) are compared with the Timer/Counter
value at all time. The result of the compare can be used by the Waveform Generator to
generate a PWM or variable frequency output on the Output Compare pin (OC1A/B). See “Output
Compare Units” on page 90.. The compare match event will also set the Compare Match
Flag (OCF1A/B) which can be used to generate an Output Compare interrupt request.
The Input Capture Register can capture the Timer/Counter value at a given external (edge triggered)
event on either the Input Capture pin (ICP1) or on the Analog Comparator pins (See
“Analog Comparator” on page 149.) The Input Capture unit includes a digital filtering unit (Noise
Canceler) for reducing the chance of capturing noise spikes.
The TOP value, or maximum Timer/Counter value, can in some modes of operation be defined
by either the OCR1A Register, the ICR1 Register, or by a set of fixed values. When using
OCR1A as TOP value in a PWM mode, the OCR1A Register can not be used for generating a
PWM output. However, the TOP value will in this case be double buffered allowing the TOP
value to be changed in run time. If a fixed TOP value is required, the ICR1 Register can be used
as an alternative, freeing the OCR1A to be used as PWM output.
Definitions The following definitions are used extensively throughout the section:
Compatibility The 16-bit Timer/Counter has been updated and improved from previous versions of the 16-bit
AVR Timer/Counter. This 16-bit Timer/Counter is fully compatible with the earlier version
regarding:
• All 16-bit Timer/Counter related I/O Register address locations, including Timer Interrupt
Registers.
• Bit locations inside all 16-bit Timer/Counter Registers, including Timer Interrupt Registers.
• Interrupt Vectors.
The following control bits have changed name, but have same functionality and register location:
• PWM10 is changed to WGM10.
• PWM11 is changed to WGM11.
• CTC1 is changed to WGM12.
Table 42. Definitions
BOTTOM The counter reaches the BOTTOM when it becomes 0x0000.
MAX The counter reaches its MAXimum when it becomes 0xFFFF (decimal 65535).
TOP
The counter reaches the TOP when it becomes equal to the highest value in the
count sequence. The TOP value can be assigned to be one of the fixed values:
0x00FF, 0x01FF, or 0x03FF, or to the value stored in the OCR1A or ICR1 Register.
The assignment is dependent of the mode of operation.84
2543L–AVR–08/10
ATtiny2313
The following bits are added to the 16-bit Timer/Counter Control Registers:
• FOC1A and FOC1B are added to TCCR1A.
• WGM13 is added to TCCR1B.
The 16-bit Timer/Counter has improvements that will affect the compatibility in some special
cases.
Accessing 16-bit
Registers
The TCNT1, OCR1A/B, and ICR1 are 16-bit registers that can be accessed by the AVR CPU via
the 8-bit data bus. The 16-bit register must be byte accessed using two read or write operations.
Each 16-bit timer has a single 8-bit register for temporary storing of the high byte of the 16-bit
access. The same temporary register is shared between all 16-bit registers within each 16-bit
timer. Accessing the low byte triggers the 16-bit read or write operation. When the low byte of a
16-bit register is written by the CPU, the high byte stored in the temporary register, and the low
byte written are both copied into the 16-bit register in the same clock cycle. When the low byte of
a 16-bit register is read by the CPU, the high byte of the 16-bit register is copied into the temporary
register in the same clock cycle as the low byte is read.
Not all 16-bit accesses uses the temporary register for the high byte. Reading the OCR1A/B 16-
bit registers does not involve using the temporary register.
To do a 16-bit write, the high byte must be written before the low byte. For a 16-bit read, the low
byte must be read before the high byte.
The following code examples show how to access the 16-bit timer registers assuming that no
interrupts updates the temporary register. The same principle can be used directly for accessing
the OCR1A/B and ICR1 Registers. Note that when using “C”, the compiler handles the 16-bit
access.85
2543L–AVR–08/10
ATtiny2313
Note: 1. The example code assumes that the part specific header file is included.
For I/O Registers located in extended I/O map, “IN”, “OUT”, “SBIS”, “SBIC”, “CBI”, and “SBI”
instructions must be replaced with instructions that allow access to extended I/O. Typically
“LDS” and “STS” combined with “SBRS”, “SBRC”, “SBR”, and “CBR”.
The assembly code example returns the TCNT1 value in the r17:r16 register pair.
It is important to notice that accessing 16-bit registers are atomic operations. If an interrupt
occurs between the two instructions accessing the 16-bit register, and the interrupt code
updates the temporary register by accessing the same or any other of the 16-bit timer registers,
then the result of the access outside the interrupt will be corrupted. Therefore, when both the
main code and the interrupt code update the temporary register, the main code must disable the
interrupts during the 16-bit access.
Assembly Code Examples(1)
...
; Set TCNT1 to 0x01FF
ldi r17,0x01
ldi r16,0xFF
out TCNT1H,r17
out TCNT1L,r16
; Read TCNT1 into r17:r16
in r16,TCNT1L
in r17,TCNT1H
...
C Code Examples(1)
unsigned int i;
...
/* Set TCNT1 to 0x01FF */
TCNT1 = 0x1FF;
/* Read TCNT1 into i */
i = TCNT1;
...86
2543L–AVR–08/10
ATtiny2313
The following code examples show how to do an atomic read of the TCNT1 Register contents.
Reading any of the OCR1A/B or ICR1 Registers can be done by using the same principle.
Note: 1. The example code assumes that the part specific header file is included.
For I/O Registers located in extended I/O map, “IN”, “OUT”, “SBIS”, “SBIC”, “CBI”, and “SBI”
instructions must be replaced with instructions that allow access to extended I/O. Typically
“LDS” and “STS” combined with “SBRS”, “SBRC”, “SBR”, and “CBR”.
The assembly code example returns the TCNT1 value in the r17:r16 register pair.
Assembly Code Example(1)
TIM16_ReadTCNT1:
; Save global interrupt flag
in r18,SREG
; Disable interrupts
cli
; Read TCNT1 into r17:r16
in r16,TCNT1L
in r17,TCNT1H
; Restore global interrupt flag
out SREG,r18
ret
C Code Example(1)
unsigned int TIM16_ReadTCNT1( void )
{
unsigned char sreg;
unsigned int i;
/* Save global interrupt flag */
sreg = SREG;
/* Disable interrupts */
__disable_interrupt();
/* Read TCNT1 into i */
i = TCNT1;
/* Restore global interrupt flag */
SREG = sreg;
return i;
}87
2543L–AVR–08/10
ATtiny2313
The following code examples show how to do an atomic write of the TCNT1 Register contents.
Writing any of the OCR1A/B or ICR1 Registers can be done by using the same principle.
Note: 1. The example code assumes that the part specific header file is included.
For I/O Registers located in extended I/O map, “IN”, “OUT”, “SBIS”, “SBIC”, “CBI”, and “SBI”
instructions must be replaced with instructions that allow access to extended I/O. Typically
“LDS” and “STS” combined with “SBRS”, “SBRC”, “SBR”, and “CBR”.
The assembly code example requires that the r17:r16 register pair contains the value to be written
to TCNT1.
Reusing the
Temporary High Byte
Register
If writing to more than one 16-bit register where the high byte is the same for all registers written,
then the high byte only needs to be written once. However, note that the same rule of atomic
operation described previously also applies in this case.
Assembly Code Example(1)
TIM16_WriteTCNT1:
; Save global interrupt flag
in r18,SREG
; Disable interrupts
cli
; Set TCNT1 to r17:r16
out TCNT1H,r17
out TCNT1L,r16
; Restore global interrupt flag
out SREG,r18
ret
C Code Example(1)
void TIM16_WriteTCNT1( unsigned int i )
{
unsigned char sreg;
unsigned int i;
/* Save global interrupt flag */
sreg = SREG;
/* Disable interrupts */
__disable_interrupt();
/* Set TCNT1 to i */
TCNT1 = i;
/* Restore global interrupt flag */
SREG = sreg;
}88
2543L–AVR–08/10
ATtiny2313
Timer/Counter
Clock Sources
The Timer/Counter can be clocked by an internal or an external clock source. The clock source
is selected by the Clock Select logic which is controlled by the Clock Select (CS12:0) bits
located in the Timer/Counter control Register B (TCCR1B). For details on clock sources and
prescaler, see “Timer/Counter0 and Timer/Counter1 Prescalers” on page 80.
Counter Unit The main part of the 16-bit Timer/Counter is the programmable 16-bit bi-directional counter unit.
Figure 41 shows a block diagram of the counter and its surroundings.
Figure 41. Counter Unit Block Diagram
Signal description (internal signals):
Count Increment or decrement TCNT1 by 1.
Direction Select between increment and decrement.
Clear Clear TCNT1 (set all bits to zero).
clkT1 Timer/Counter clock.
TOP Signalize that TCNT1 has reached maximum value.
BOTTOM Signalize that TCNT1 has reached minimum value (zero).
The 16-bit counter is mapped into two 8-bit I/O memory locations: Counter High (TCNT1H) containing
the upper eight bits of the counter, and Counter Low (TCNT1L) containing the lower eight
bits. The TCNT1H Register can only be indirectly accessed by the CPU. When the CPU does an
access to the TCNT1H I/O location, the CPU accesses the high byte temporary register (TEMP).
The temporary register is updated with the TCNT1H value when the TCNT1L is read, and
TCNT1H is updated with the temporary register value when TCNT1L is written. This allows the
CPU to read or write the entire 16-bit counter value within one clock cycle via the 8-bit data bus.
It is important to notice that there are special cases of writing to the TCNT1 Register when the
counter is counting that will give unpredictable results. The special cases are described in the
sections where they are of importance.
Depending on the mode of operation used, the counter is cleared, incremented, or decremented
at each timer clock (clkT1). The clkT1 can be generated from an external or internal clock source,
selected by the Clock Select bits (CS12:0). When no clock source is selected (CS12:0 = 0) the
timer is stopped. However, the TCNT1 value can be accessed by the CPU, independent of
whether clkT1 is present or not. A CPU write overrides (has priority over) all counter clear or
count operations.
The counting sequence is determined by the setting of the Waveform Generation mode bits
(WGM13:0) located in the Timer/Counter Control Registers A and B (TCCR1A and TCCR1B).
There are close connections between how the counter behaves (counts) and how waveforms
are generated on the Output Compare outputs OC1x. For more details about advanced counting
sequences and waveform generation, see “Modes of Operation” on page 94.
TEMP (8-bit)
DATA BUS (8-bit)
TCNTn (16-bit Counter)
TCNTnH (8-bit) TCNTnL (8-bit) Control Logic
Count
Clear
Direction
TOVn
(Int.Req.)
Clock Select
TOP BOTTOM
Tn Edge
Detector
( From Prescaler )
clkTn89
2543L–AVR–08/10
ATtiny2313
The Timer/Counter Overflow Flag (TOV1) is set according to the mode of operation selected by
the WGM13:0 bits. TOV1 can be used for generating a CPU interrupt.
Input Capture Unit The Timer/Counter incorporates an Input Capture unit that can capture external events and give
them a time-stamp indicating time of occurrence. The external signal indicating an event, or multiple
events, can be applied via the ICP1 pin or alternatively, via the analog-comparator unit. The
time-stamps can then be used to calculate frequency, duty-cycle, and other features of the signal
applied. Alternatively the time-stamps can be used for creating a log of the events.
The Input Capture unit is illustrated by the block diagram shown in Figure 42. The elements of
the block diagram that are not directly a part of the Input Capture unit are gray shaded. The
small “n” in register and bit names indicates the Timer/Counter number.
Figure 42. Input Capture Unit Block Diagram
When a change of the logic level (an event) occurs on the Input Capture pin (ICP1), alternatively
on the Analog Comparator output (ACO), and this change confirms to the setting of the edge
detector, a capture will be triggered. When a capture is triggered, the 16-bit value of the counter
(TCNT1) is written to the Input Capture Register (ICR1). The Input Capture Flag (ICF1) is set at
the same system clock as the TCNT1 value is copied into ICR1 Register. If enabled (ICIE1 = 1),
the Input Capture Flag generates an Input Capture interrupt. The ICF1 flag is automatically
cleared when the interrupt is executed. Alternatively the ICF1 flag can be cleared by software by
writing a logical one to its I/O bit location.
Reading the 16-bit value in the Input Capture Register (ICR1) is done by first reading the low
byte (ICR1L) and then the high byte (ICR1H). When the low byte is read the high byte is copied
into the high byte temporary register (TEMP). When the CPU reads the ICR1H I/O location it will
access the TEMP Register.
The ICR1 Register can only be written when using a Waveform Generation mode that utilizes
the ICR1 Register for defining the counter’s TOP value. In these cases the Waveform Generation
mode (WGM13:0) bits must be set before the TOP value can be written to the ICR1
Register. When writing the ICR1 Register the high byte must be written to the ICR1H I/O location
before the low byte is written to ICR1L.
ICFn (Int.Req.)
Analog
Comparator
WRITE ICRn (16-bit Register)
ICRnH (8-bit)
Noise
Canceler
ICPn
Edge
Detector
TEMP (8-bit)
DATA BUS (8-bit)
ICRnL (8-bit)
TCNTn (16-bit Counter)
TCNTnH (8-bit) TCNTnL (8-bit)
ACO* ACIC* ICNC ICES90
2543L–AVR–08/10
ATtiny2313
For more information on how to access the 16-bit registers refer to “Accessing 16-bit Registers”
on page 84.
Input Capture Trigger
Source
The main trigger source for the Input Capture unit is the Input Capture pin (ICP1).
Timer/Counter1 can alternatively use the Analog Comparator output as trigger source for the
Input Capture unit. The Analog Comparator is selected as trigger source by setting the Analog
Comparator Input Capture (ACIC) bit in the Analog Comparator Control and Status Register
(ACSR). Be aware that changing trigger source can trigger a capture. The Input Capture Flag
must therefore be cleared after the change.
Both the Input Capture pin (ICP1) and the Analog Comparator output (ACO) inputs are sampled
using the same technique as for the T1 pin (Figure 38 on page 80). The edge detector is also
identical. However, when the noise canceler is enabled, additional logic is inserted before the
edge detector, which increases the delay by four system clock cycles. Note that the input of the
noise canceler and edge detector is always enabled unless the Timer/Counter is set in a Waveform
Generation mode that uses ICR1 to define TOP.
An Input Capture can be triggered by software by controlling the port of the ICP1 pin.
Noise Canceler The noise canceler improves noise immunity by using a simple digital filtering scheme. The
noise canceler input is monitored over four samples, and all four must be equal for changing the
output that in turn is used by the edge detector.
The noise canceler is enabled by setting the Input Capture Noise Canceler (ICNC1) bit in
Timer/Counter Control Register B (TCCR1B). When enabled the noise canceler introduces additional
four system clock cycles of delay from a change applied to the input, to the update of the
ICR1 Register. The noise canceler uses the system clock and is therefore not affected by the
prescaler.
Using the Input
Capture Unit
The main challenge when using the Input Capture unit is to assign enough processor capacity
for handling the incoming events. The time between two events is critical. If the processor has
not read the captured value in the ICR1 Register before the next event occurs, the ICR1 will be
overwritten with a new value. In this case the result of the capture will be incorrect.
When using the Input Capture interrupt, the ICR1 Register should be read as early in the interrupt
handler routine as possible. Even though the Input Capture interrupt has relatively high
priority, the maximum interrupt response time is dependent on the maximum number of clock
cycles it takes to handle any of the other interrupt requests.
Using the Input Capture unit in any mode of operation when the TOP value (resolution) is
actively changed during operation, is not recommended.
Measurement of an external signal’s duty cycle requires that the trigger edge is changed after
each capture. Changing the edge sensing must be done as early as possible after the ICR1
Register has been read. After a change of the edge, the Input Capture Flag (ICF1) must be
cleared by software (writing a logical one to the I/O bit location). For measuring frequency only,
the clearing of the ICF1 flag is not required (if an interrupt handler is used).
Output Compare
Units
The 16-bit comparator continuously compares TCNT1 with the Output Compare Register
(OCR1x). If TCNT equals OCR1x the comparator signals a match. A match will set the Output
Compare Flag (OCF1x) at the next timer clock cycle. If enabled (OCIE1x = 1), the Output Compare
Flag generates an Output Compare interrupt. The OCF1x flag is automatically cleared
when the interrupt is executed. Alternatively the OCF1x flag can be cleared by software by writing
a logical one to its I/O bit location. The Waveform Generator uses the match signal to
generate an output according to operating mode set by the Waveform Generation mode
(WGM13:0) bits and Compare Output mode (COM1x1:0) bits. The TOP and BOTTOM signals91
2543L–AVR–08/10
ATtiny2313
are used by the Waveform Generator for handling the special cases of the extreme values in
some modes of operation (See “Modes of Operation” on page 94.)
A special feature of Output Compare unit A allows it to define the Timer/Counter TOP value (i.e.,
counter resolution). In addition to the counter resolution, the TOP value defines the period time
for waveforms generated by the Waveform Generator.
Figure 43 shows a block diagram of the Output Compare unit. The small “n” in the register and
bit names indicates the device number (n = 1 for Timer/Counter 1), and the “x” indicates Output
Compare unit (A/B). The elements of the block diagram that are not directly a part of the Output
Compare unit are gray shaded.
Figure 43. Output Compare Unit, Block Diagram
The OCR1x Register is double buffered when using any of the twelve Pulse Width Modulation
(PWM) modes. For the Normal and Clear Timer on Compare (CTC) modes of operation, the
double buffering is disabled. The double buffering synchronizes the update of the OCR1x Compare
Register to either TOP or BOTTOM of the counting sequence. The synchronization
prevents the occurrence of odd-length, non-symmetrical PWM pulses, thereby making the output
glitch-free.
The OCR1x Register access may seem complex, but this is not case. When the double buffering
is enabled, the CPU has access to the OCR1x Buffer Register, and if double buffering is disabled
the CPU will access the OCR1x directly. The content of the OCR1x (Buffer or Compare)
Register is only changed by a write operation (the Timer/Counter does not update this register
automatically as the TCNT1 and ICR1 Register). Therefore OCR1x is not read via the high byte
temporary register (TEMP). However, it is a good practice to read the low byte first as when
accessing other 16-bit registers. Writing the OCR1x Registers must be done via the TEMP Register
since the compare of all 16 bits is done continuously. The high byte (OCR1xH) has to be
written first. When the high byte I/O location is written by the CPU, the TEMP Register will be
updated by the value written. Then when the low byte (OCR1xL) is written to the lower eight bits,
the high byte will be copied into the upper 8-bits of either the OCR1x buffer or OCR1x Compare
Register in the same system clock cycle.
OCFnx (Int.Req.)
= (16-bit Comparator )
OCRnx Buffer (16-bit Register)
OCRnxH Buf. (8-bit)
OCnx
TEMP (8-bit)
DATA BUS (8-bit)
OCRnxL Buf. (8-bit)
TCNTn (16-bit Counter)
TCNTnH (8-bit) TCNTnL (8-bit)
WGMn3:0 COMnx1:0
OCRnx (16-bit Register)
OCRnxH (8-bit) OCRnxL (8-bit)
Waveform Generator
TOP
BOTTOM92
2543L–AVR–08/10
ATtiny2313
For more information of how to access the 16-bit registers refer to “Accessing 16-bit Registers”
on page 84.
Force Output
Compare
In non-PWM Waveform Generation modes, the match output of the comparator can be forced by
writing a one to the Force Output Compare (FOC1x) bit. Forcing compare match will not set the
OCF1x flag or reload/clear the timer, but the OC1x pin will be updated as if a real compare
match had occurred (the COM11:0 bits settings define whether the OC1x pin is set, cleared or
toggled).
Compare Match
Blocking by TCNT1
Write
All CPU writes to the TCNT1 Register will block any compare match that occurs in the next timer
clock cycle, even when the timer is stopped. This feature allows OCR1x to be initialized to the
same value as TCNT1 without triggering an interrupt when the Timer/Counter clock is enabled.
Using the Output
Compare Unit
Since writing TCNT1 in any mode of operation will block all compare matches for one timer clock
cycle, there are risks involved when changing TCNT1 when using any of the Output Compare
channels, independent of whether the Timer/Counter is running or not. If the value written to
TCNT1 equals the OCR1x value, the compare match will be missed, resulting in incorrect waveform
generation. Do not write the TCNT1 equal to TOP in PWM modes with variable TOP
values. The compare match for the TOP will be ignored and the counter will continue to 0xFFFF.
Similarly, do not write the TCNT1 value equal to BOTTOM when the counter is downcounting.
The setup of the OC1x should be performed before setting the Data Direction Register for the
port pin to output. The easiest way of setting the OC1x value is to use the Force Output Compare
(FOC1x) strobe bits in Normal mode. The OC1x Register keeps its value even when
changing between Waveform Generation modes.
Be aware that the COM1x1:0 bits are not double buffered together with the compare value.
Changing the COM1x1:0 bits will take effect immediately.93
2543L–AVR–08/10
ATtiny2313
Compare Match
Output Unit
The Compare Output mode (COM1x1:0) bits have two functions. The Waveform Generator uses
the COM1x1:0 bits for defining the Output Compare (OC1x) state at the next compare match.
Secondly the COM1x1:0 bits control the OC1x pin output source. Figure 44 shows a simplified
schematic of the logic affected by the COM1x1:0 bit setting. The I/O Registers, I/O bits, and I/O
pins in the figure are shown in bold. Only the parts of the general I/O port control registers (DDR
and PORT) that are affected by the COM1x1:0 bits are shown. When referring to the OC1x
state, the reference is for the internal OC1x Register, not the OC1x pin. If a system reset occur,
the OC1x Register is reset to “0”.
Figure 44. Compare Match Output Unit, Schematic
The general I/O port function is overridden by the Output Compare (OC1x) from the Waveform
Generator if either of the COM1x1:0 bits are set. However, the OC1x pin direction (input or output)
is still controlled by the Data Direction Register (DDR) for the port pin. The Data Direction
Register bit for the OC1x pin (DDR_OC1x) must be set as output before the OC1x value is visible
on the pin. The port override function is generally independent of the Waveform Generation
mode, but there are some exceptions. Refer to Table 43, Table 44 and Table 45 for details.
The design of the Output Compare pin logic allows initialization of the OC1x state before the output
is enabled. Note that some COM1x1:0 bit settings are reserved for certain modes of
operation. See “16-bit Timer/Counter Register Description” on page 104.
The COM1x1:0 bits have no effect on the Input Capture unit.
PORT
DDR
D Q
D Q
OCnx
OCnx Pin
D Q Waveform
Generator
COMnx1
COMnx0
0
1
DATA BUS
FOCnx
clkI/O94
2543L–AVR–08/10
ATtiny2313
Compare Output Mode
and Waveform
Generation
The Waveform Generator uses the COM1x1:0 bits differently in normal, CTC, and PWM modes.
For all modes, setting the COM1x1:0 = 0 tells the Waveform Generator that no action on the
OC1x Register is to be performed on the next compare match. For compare output actions in the
non-PWM modes refer to Table 43 on page 104. For fast PWM mode refer to Table 44 on page
104, and for phase correct and phase and frequency correct PWM refer to Table 45 on page
105.
A change of the COM1x1:0 bits state will have effect at the first compare match after the bits are
written. For non-PWM modes, the action can be forced to have immediate effect by using the
FOC1x strobe bits.
Modes of
Operation
The mode of operation, i.e., the behavior of the Timer/Counter and the Output Compare pins, is
defined by the combination of the Waveform Generation mode (WGM13:0) and Compare Output
mode (COM1x1:0) bits. The Compare Output mode bits do not affect the counting sequence,
while the Waveform Generation mode bits do. The COM1x1:0 bits control whether the PWM output
generated should be inverted or not (inverted or non-inverted PWM). For non-PWM modes
the COM1x1:0 bits control whether the output should be set, cleared or toggle at a compare
match (See “Compare Match Output Unit” on page 93.)
For detailed timing information refer to “Timer/Counter Timing Diagrams” on page 102.
Normal Mode The simplest mode of operation is the Normal mode (WGM13:0 = 0). In this mode the counting
direction is always up (incrementing), and no counter clear is performed. The counter simply
overruns when it passes its maximum 16-bit value (MAX = 0xFFFF) and then restarts from the
BOTTOM (0x0000). In normal operation the Timer/Counter Overflow Flag (TOV1) will be set in
the same timer clock cycle as the TCNT1 becomes zero. The TOV1 flag in this case behaves
like a 17th bit, except that it is only set, not cleared. However, combined with the timer overflow
interrupt that automatically clears the TOV1 flag, the timer resolution can be increased by software.
There are no special cases to consider in the Normal mode, a new counter value can be
written anytime.
The Input Capture unit is easy to use in Normal mode. However, observe that the maximum
interval between the external events must not exceed the resolution of the counter. If the interval
between events are too long, the timer overflow interrupt or the prescaler must be used to
extend the resolution for the capture unit.
The Output Compare units can be used to generate interrupts at some given time. Using the
Output Compare to generate waveforms in Normal mode is not recommended, since this will
occupy too much of the CPU time.
Clear Timer on
Compare Match (CTC)
Mode
In Clear Timer on Compare or CTC mode (WGM13:0 = 4 or 12), the OCR1A or ICR1 Register
are used to manipulate the counter resolution. In CTC mode the counter is cleared to zero when
the counter value (TCNT1) matches either the OCR1A (WGM13:0 = 4) or the ICR1 (WGM13:0 =
12). The OCR1A or ICR1 define the top value for the counter, hence also its resolution. This
mode allows greater control of the compare match output frequency. It also simplifies the operation
of counting external events.
The timing diagram for the CTC mode is shown in Figure 45 on page 95. The counter value
(TCNT1) increases until a compare match occurs with either OCR1A or ICR1, and then counter
(TCNT1) is cleared.95
2543L–AVR–08/10
ATtiny2313
Figure 45. CTC Mode, Timing Diagram
An interrupt can be generated at each time the counter value reaches the TOP value by either
using the OCF1A or ICF1 flag according to the register used to define the TOP value. If the interrupt
is enabled, the interrupt handler routine can be used for updating the TOP value. However,
changing the TOP to a value close to BOTTOM when the counter is running with none or a low
prescaler value must be done with care since the CTC mode does not have the double buffering
feature. If the new value written to OCR1A or ICR1 is lower than the current value of TCNT1, the
counter will miss the compare match. The counter will then have to count to its maximum value
(0xFFFF) and wrap around starting at 0x0000 before the compare match can occur. In many
cases this feature is not desirable. An alternative will then be to use the fast PWM mode using
OCR1A for defining TOP (WGM13:0 = 15) since the OCR1A then will be double buffered.
For generating a waveform output in CTC mode, the OCFA output can be set to toggle its logical
level on each compare match by setting the Compare Output mode bits to toggle mode
(COM1A1:0 = 1). The OCF1A value will not be visible on the port pin unless the data direction
for the pin is set to output (DDR_OCF1A = 1). The waveform generated will have a maximum
frequency of fOC1A = fclk_I/O/2 when OCR1A is set to zero (0x0000). The waveform frequency is
defined by the following equation:
The N variable represents the prescaler factor (1, 8, 64, 256, or 1024).
As for the Normal mode of operation, the TOV1 flag is set in the same timer clock cycle that the
counter counts from MAX to 0x0000.
TCNTn
OCnA
(Toggle)
OCnA Interrupt Flag Set
or ICFn Interrupt Flag Set
(Interrupt on TOP)
Period 1 2 3 4
(COMnA1:0 = 1)
f
OCnA
f
clk_I/O
2 ⋅ ⋅ N ( ) 1 + OCRnA = --------------------------------------------------96
2543L–AVR–08/10
ATtiny2313
Fast PWM Mode The fast Pulse Width Modulation or fast PWM mode (WGM13:0 = 5, 6, 7, 14, or 15) provides a
high frequency PWM waveform generation option. The fast PWM differs from the other PWM
options by its single-slope operation. The counter counts from BOTTOM to TOP then restarts
from BOTTOM. In non-inverting Compare Output mode, the Output Compare (OC1x) is set on
the compare match between TCNT1 and OCR1x, and cleared at TOP. In inverting Compare
Output mode output is cleared on compare match and set at TOP. Due to the single-slope operation,
the operating frequency of the fast PWM mode can be twice as high as the phase correct
and phase and frequency correct PWM modes that use dual-slope operation. This high frequency
makes the fast PWM mode well suited for power regulation, rectification, and DAC
applications. High frequency allows physically small sized external components (coils, capacitors),
hence reduces total system cost.
The PWM resolution for fast PWM can be fixed to 8-, 9-, or 10-bit, or defined by either ICR1 or
OCR1A. The minimum resolution allowed is 2-bit (ICR1 or OCR1A set to 0x0003), and the maximum
resolution is 16-bit (ICR1 or OCR1A set to MAX). The PWM resolution in bits can be
calculated by using the following equation:
In fast PWM mode the counter is incremented until the counter value matches either one of the
fixed values 0x00FF, 0x01FF, or 0x03FF (WGM13:0 = 5, 6, or 7), the value in ICR1 (WGM13:0 =
14), or the value in OCR1A (WGM13:0 = 15). The counter is then cleared at the following timer
clock cycle. The timing diagram for the fast PWM mode is shown in Figure 46. The figure shows
fast PWM mode when OCR1A or ICR1 is used to define TOP. The TCNT1 value is in the timing
diagram shown as a histogram for illustrating the single-slope operation. The diagram includes
non-inverted and inverted PWM outputs. The small horizontal line marks on the TCNT1 slopes
represent compare matches between OCR1x and TCNT1. The OC1x interrupt flag will be set
when a compare match occurs.
Figure 46. Fast PWM Mode, Timing Diagram
The Timer/Counter Overflow Flag (TOV1) is set each time the counter reaches TOP. In addition
the OCF1A or ICF1 flag is set at the same timer clock cycle as TOV1 is set when either OCR1A
or ICR1 is used for defining the TOP value. If one of the interrupts are enabled, the interrupt handler
routine can be used for updating the TOP and compare values.
When changing the TOP value the program must ensure that the new TOP value is higher or
equal to the value of all of the Compare Registers. If the TOP value is lower than any of the
Compare Registers, a compare match will never occur between the TCNT1 and the OCR1x.
RFPWM
log( ) TOP + 1
log( ) 2 = -----------------------------------
TCNTn
OCRnx/TOP Update and
TOVn Interrupt Flag Set and
OCnA Interrupt Flag Set
or ICFn Interrupt Flag Set
(Interrupt on TOP)
Period 1 2 3 4 5 6 7 8
OCnx
OCnx
(COMnx1:0 = 2)
(COMnx1:0 = 3)97
2543L–AVR–08/10
ATtiny2313
Note that when using fixed TOP values the unused bits are masked to zero when any of the
OCR1x Registers are written.
The procedure for updating ICR1 differs from updating OCR1A when used for defining the TOP
value. The ICR1 Register is not double buffered. This means that if ICR1 is changed to a low
value when the counter is running with none or a low prescaler value, there is a risk that the new
ICR1 value written is lower than the current value of TCNT1. The result will then be that the
counter will miss the compare match at the TOP value. The counter will then have to count to the
MAX value (0xFFFF) and wrap around starting at 0x0000 before the compare match can occur.
The OCR1A Register however, is double buffered. This feature allows the OCR1A I/O location
to be written anytime. When the OCR1A I/O location is written the value written will be put into
the OCR1A Buffer Register. The OCR1A Compare Register will then be updated with the value
in the Buffer Register at the next timer clock cycle the TCNT1 matches TOP. The update is done
at the same timer clock cycle as the TCNT1 is cleared and the TOV1 flag is set.
Using the ICR1 Register for defining TOP works well when using fixed TOP values. By using
ICR1, the OCR1A Register is free to be used for generating a PWM output on OC1A. However,
if the base PWM frequency is actively changed (by changing the TOP value), using the OCR1A
as TOP is clearly a better choice due to its double buffer feature.
In fast PWM mode, the compare units allow generation of PWM waveforms on the OC1x pins.
Setting the COM1x1:0 bits to two will produce a non-inverted PWM and an inverted PWM output
can be generated by setting the COM1x1:0 to three (see Table 43 on page 104). The actual
OC1x value will only be visible on the port pin if the data direction for the port pin is set as output
(DDR_OC1x). The PWM waveform is generated by setting (or clearing) the OC1x Register at
the compare match between OCR1x and TCNT1, and clearing (or setting) the OC1x Register at
the timer clock cycle the counter is cleared (changes from TOP to BOTTOM).
The PWM frequency for the output can be calculated by the following equation:
The N variable represents the prescaler divider (1, 8, 64, 256, or 1024).
The extreme values for the OCR1x Register represents special cases when generating a PWM
waveform output in the fast PWM mode. If the OCR1x is set equal to BOTTOM (0x0000) the output
will be a narrow spike for each TOP+1 timer clock cycle. Setting the OCR1x equal to TOP
will result in a constant high or low output (depending on the polarity of the output set by the
COM1x1:0 bits.)
A frequency (with 50% duty cycle) waveform output in fast PWM mode can be achieved by setting
OCF1A to toggle its logical level on each compare match (COM1A1:0 = 1). The waveform
generated will have a maximum frequency of fOC1A = fclk_I/O/2 when OCR1A is set to zero
(0x0000). This feature is similar to the OCF1A toggle in CTC mode, except the double buffer
feature of the Output Compare unit is enabled in the fast PWM mode.
f
OCnxPWM
f
clk_I/O
N ⋅ ( ) 1 + TOP = -----------------------------------98
2543L–AVR–08/10
ATtiny2313
Phase Correct PWM
Mode
The phase correct Pulse Width Modulation or phase correct PWM mode (WGM13:0 = 1, 2, 3,
10, or 11) provides a high resolution phase correct PWM waveform generation option. The
phase correct PWM mode is, like the phase and frequency correct PWM mode, based on a dualslope
operation. The counter counts repeatedly from BOTTOM (0x0000) to TOP and then from
TOP to BOTTOM. In non-inverting Compare Output mode, the Output Compare (OC1x) is
cleared on the compare match between TCNT1 and OCR1x while upcounting, and set on the
compare match while downcounting. In inverting Output Compare mode, the operation is
inverted. The dual-slope operation has lower maximum operation frequency than single slope
operation. However, due to the symmetric feature of the dual-slope PWM modes, these modes
are preferred for motor control applications.
The PWM resolution for the phase correct PWM mode can be fixed to 8-, 9-, or 10-bit, or defined
by either ICR1 or OCR1A. The minimum resolution allowed is 2-bit (ICR1 or OCR1A set to
0x0003), and the maximum resolution is 16-bit (ICR1 or OCR1A set to MAX). The PWM resolution
in bits can be calculated by using the following equation:
In phase correct PWM mode the counter is incremented until the counter value matches either
one of the fixed values 0x00FF, 0x01FF, or 0x03FF (WGM13:0 = 1, 2, or 3), the value in ICR1
(WGM13:0 = 10), or the value in OCR1A (WGM13:0 = 11). The counter has then reached the
TOP and changes the count direction. The TCNT1 value will be equal to TOP for one timer clock
cycle. The timing diagram for the phase correct PWM mode is shown on Figure 47. The figure
shows phase correct PWM mode when OCR1A or ICR1 is used to define TOP. The TCNT1
value is in the timing diagram shown as a histogram for illustrating the dual-slope operation. The
diagram includes non-inverted and inverted PWM outputs. The small horizontal line marks on
the TCNT1 slopes represent compare matches between OCR1x and TCNT1. The OC1x interrupt
flag will be set when a compare match occurs.
Figure 47. Phase Correct PWM Mode, Timing Diagram
The Timer/Counter Overflow Flag (TOV1) is set each time the counter reaches BOTTOM. When
either OCR1A or ICR1 is used for defining the TOP value, the OCF1A or ICF1 flag is set accordingly
at the same timer clock cycle as the OCR1x Registers are updated with the double buffer
RPCPWM
log( ) TOP + 1
log( ) 2 = -----------------------------------
OCRnx/TOP Update and
OCnA Interrupt Flag Set
or ICFn Interrupt Flag Set
(Interrupt on TOP)
1 2 3 4
TOVn Interrupt Flag Set
(Interrupt on Bottom)
TCNTn
Period
OCnx
OCnx
(COMnx1:0 = 2)
(COMnx1:0 = 3)99
2543L–AVR–08/10
ATtiny2313
value (at TOP). The interrupt flags can be used to generate an interrupt each time the counter
reaches the TOP or BOTTOM value.
When changing the TOP value the program must ensure that the new TOP value is higher or
equal to the value of all of the Compare Registers. If the TOP value is lower than any of the
Compare Registers, a compare match will never occur between the TCNT1 and the OCR1x.
Note that when using fixed TOP values, the unused bits are masked to zero when any of the
OCR1x Registers are written. As the third period shown in Figure 47 illustrates, changing the
TOP actively while the Timer/Counter is running in the phase correct mode can result in an
unsymmetrical output. The reason for this can be found in the time of update of the OCR1x Register.
Since the OCR1x update occurs at TOP, the PWM period starts and ends at TOP. This
implies that the length of the falling slope is determined by the previous TOP value, while the
length of the rising slope is determined by the new TOP value. When these two values differ the
two slopes of the period will differ in length. The difference in length gives the unsymmetrical
result on the output.
It is recommended to use the phase and frequency correct mode instead of the phase correct
mode when changing the TOP value while the Timer/Counter is running. When using a static
TOP value there are practically no differences between the two modes of operation.
In phase correct PWM mode, the compare units allow generation of PWM waveforms on the
OC1x pins. Setting the COM1x1:0 bits to two will produce a non-inverted PWM and an inverted
PWM output can be generated by setting the COM1x1:0 to three (See Table 44 on page 104).
The actual OC1x value will only be visible on the port pin if the data direction for the port pin is
set as output (DDR_OC1x). The PWM waveform is generated by setting (or clearing) the OC1x
Register at the compare match between OCR1x and TCNT1 when the counter increments, and
clearing (or setting) the OC1x Register at compare match between OCR1x and TCNT1 when
the counter decrements. The PWM frequency for the output when using phase correct PWM can
be calculated by the following equation:
The N variable represents the prescaler divider (1, 8, 64, 256, or 1024).
The extreme values for the OCR1x Register represent special cases when generating a PWM
waveform output in the phase correct PWM mode. If the OCR1x is set equal to BOTTOM the
output will be continuously low and if set equal to TOP the output will be continuously high for
non-inverted PWM mode. For inverted PWM the output will have the opposite logic values.
f
OCnxPCPWM
f
clk_I/O
2 ⋅ ⋅ N TOP = ----------------------------100
2543L–AVR–08/10
ATtiny2313
Phase and Frequency
Correct PWM Mode
The phase and frequency correct Pulse Width Modulation, or phase and frequency correct PWM
mode (WGM13:0 = 8 or 9) provides a high resolution phase and frequency correct PWM waveform
generation option. The phase and frequency correct PWM mode is, like the phase correct
PWM mode, based on a dual-slope operation. The counter counts repeatedly from BOTTOM
(0x0000) to TOP and then from TOP to BOTTOM. In non-inverting Compare Output mode, the
Output Compare (OC1x) is cleared on the compare match between TCNT1 and OCR1x while
upcounting, and set on the compare match while downcounting. In inverting Compare Output
mode, the operation is inverted. The dual-slope operation gives a lower maximum operation frequency
compared to the single-slope operation. However, due to the symmetric feature of the
dual-slope PWM modes, these modes are preferred for motor control applications.
The main difference between the phase correct, and the phase and frequency correct PWM
mode is the time the OCR1x Register is updated by the OCR1x Buffer Register, (see Figure 47
and Figure 48).
The PWM resolution for the phase and frequency correct PWM mode can be defined by either
ICR1 or OCR1A. The minimum resolution allowed is 2-bit (ICR1 or OCR1A set to 0x0003), and
the maximum resolution is 16-bit (ICR1 or OCR1A set to MAX). The PWM resolution in bits can
be calculated using the following equation:
In phase and frequency correct PWM mode the counter is incremented until the counter value
matches either the value in ICR1 (WGM13:0 = 8), or the value in OCR1A (WGM13:0 = 9). The
counter has then reached the TOP and changes the count direction. The TCNT1 value will be
equal to TOP for one timer clock cycle. The timing diagram for the phase correct and frequency
correct PWM mode is shown on Figure 48. The figure shows phase and frequency correct PWM
mode when OCR1A or ICR1 is used to define TOP. The TCNT1 value is in the timing diagram
shown as a histogram for illustrating the dual-slope operation. The diagram includes noninverted
and inverted PWM outputs. The small horizontal line marks on the TCNT1 slopes represent
compare matches between OCR1x and TCNT1. The OC1x interrupt flag will be set when a
compare match occurs.
Figure 48. Phase and Frequency Correct PWM Mode, Timing Diagram
RPFCPWM
log( ) TOP + 1
log( ) 2 = -----------------------------------
OCRnx/TOP Updateand
TOVn Interrupt Flag Set
(Interrupt on Bottom)
OCnA Interrupt Flag Set
or ICFn Interrupt Flag Set
(Interrupt on TOP)
1 2 3 4
TCNTn
Period
OCnx
OCnx
(COMnx1:0 = 2)
(COMnx1:0 = 3)101
2543L–AVR–08/10
ATtiny2313
The Timer/Counter Overflow Flag (TOV1) is set at the same timer clock cycle as the OCR1x
Registers are updated with the double buffer value (at BOTTOM). When either OCR1A or ICR1
is used for defining the TOP value, the OCF1A or ICF1 flag set when TCNT1 has reached TOP.
The interrupt flags can then be used to generate an interrupt each time the counter reaches the
TOP or BOTTOM value.
When changing the TOP value the program must ensure that the new TOP value is higher or
equal to the value of all of the Compare Registers. If the TOP value is lower than any of the
Compare Registers, a compare match will never occur between the TCNT1 and the OCR1x.
As Figure 48 shows the output generated is, in contrast to the phase correct mode, symmetrical
in all periods. Since the OCR1x Registers are updated at BOTTOM, the length of the rising and
the falling slopes will always be equal. This gives symmetrical output pulses and is therefore frequency
correct.
Using the ICR1 Register for defining TOP works well when using fixed TOP values. By using
ICR1, the OCR1A Register is free to be used for generating a PWM output on OC1A. However,
if the base PWM frequency is actively changed by changing the TOP value, using the OCR1A as
TOP is clearly a better choice due to its double buffer feature.
In phase and frequency correct PWM mode, the compare units allow generation of PWM waveforms
on the OC1x pins. Setting the COM1x1:0 bits to two will produce a non-inverted PWM and
an inverted PWM output can be generated by setting the COM1x1:0 to three (See Table 45 on
page 105). The actual OC1Fx value will only be visible on the port pin if the data direction for the
port pin is set as output (DDR_OCF1x). The PWM waveform is generated by setting (or clearing)
the OCF1x Register at the compare match between OCR1x and TCNT1 when the counter increments,
and clearing (or setting) the OCF1x Register at compare match between OCR1x and
TCNT1 when the counter decrements. The PWM frequency for the output when using phase
and frequency correct PWM can be calculated by the following equation:
The N variable represents the prescaler divider (1, 8, 64, 256, or 1024).
The extreme values for the OCR1x Register represents special cases when generating a PWM
waveform output in the phase correct PWM mode. If the OCR1x is set equal to BOTTOM the
output will be continuously low and if set equal to TOP the output will be set to high for noninverted
PWM mode. For inverted PWM the output will have the opposite logic values.
f
OCnxPFCPWM
f
clk_I/O
2 ⋅ ⋅ N TOP = ----------------------------102
2543L–AVR–08/10
ATtiny2313
Timer/Counter
Timing Diagrams
The Timer/Counter is a synchronous design and the timer clock (clkT1) is therefore shown as a
clock enable signal in the following figures. The figures include information on when interrupt
flags are set, and when the OCR1x Register is updated with the OCR1x buffer value (only for
modes utilizing double buffering). Figure 49 shows a timing diagram for the setting of OCF1x.
Figure 49. Timer/Counter Timing Diagram, Setting of OCF1x, no Prescaling
Figure 50 shows the same timing data, but with the prescaler enabled.
Figure 50. Timer/Counter Timing Diagram, Setting of OCF1x, with Prescaler (fclk_I/O/8)
Figure 51 shows the count sequence close to TOP in various modes. When using phase and
frequency correct PWM mode the OCR1x Register is updated at BOTTOM. The timing diagrams
will be the same, but TOP should be replaced by BOTTOM, TOP-1 by BOTTOM+1 and so on.
The same renaming applies for modes that set the TOV1 flag at BOTTOM.
clkTn
(clkI/O/1)
OCFnx
clkI/O
OCRnx
TCNTn
OCRnx Value
OCRnx - 1 OCRnx OCRnx + 1 OCRnx + 2
OCFnx
OCRnx
TCNTn
OCRnx Value
OCRnx - 1 OCRnx OCRnx + 1 OCRnx + 2
clkI/O
clkTn
(clkI/O/8)103
2543L–AVR–08/10
ATtiny2313
Figure 51. Timer/Counter Timing Diagram, no Prescaling
Figure 52 shows the same timing data, but with the prescaler enabled.
Figure 52. Timer/Counter Timing Diagram, with Prescaler (fclk_I/O/8)
TOVn (FPWM)
and ICFn (if used
as TOP)
OCRnx
(Update at TOP)
TCNTn
(CTC and FPWM)
TCNTn
(PC and PFC PWM) TOP - 1 TOP TOP - 1 TOP - 2
Old OCRnx Value New OCRnx Value
TOP - 1 TOP BOTTOM BOTTOM + 1
clkTn
(clkI/O/1)
clkI/O
TOVn (FPWM)
and ICFn (if used
as TOP)
OCRnx
(Update at TOP)
TCNTn
(CTC and FPWM)
TCNTn
(PC and PFC PWM)
TOP - 1 TOP TOP - 1 TOP - 2
Old OCRnx Value New OCRnx Value
TOP - 1 TOP BOTTOM BOTTOM + 1
clkI/O
clkTn
(clkI/O/8)104
2543L–AVR–08/10
ATtiny2313
16-bit
Timer/Counter
Register
Description
Timer/Counter1
Control Register A –
TCCR1A
• Bit 7:6 – COM1A1:0: Compare Output Mode for Channel A
• Bit 5:4 – COM1B1:0: Compare Output Mode for Channel B
The COM1A1:0 and COM1B1:0 control the Output Compare pins (OC1A and OC1B respectively)
behavior. If one or both of the COM1A1:0 bits are written to one, the OC1A output
overrides the normal port functionality of the I/O pin it is connected to. If one or both of the
COM1B1:0 bit are written to one, the OC1B output overrides the normal port functionality of the
I/O pin it is connected to. However, note that the Data Direction Register (DDR) bit corresponding
to the OC1A or OC1B pin must be set in order to enable the output driver.
When the OC1A or OC1B is connected to the pin, the function of the COM1x1:0 bits is dependent
of the WGM13:0 bits setting. Table 43 shows the COM1x1:0 bit functionality when the
WGM13:0 bits are set to a Normal or a CTC mode (non-PWM).
Table 44 shows the COM1x1:0 bit functionality when the WGM13:0 bits are set to the fast PWM
mode.
Bit 7 6 5 4 3 2 1 0
COM1A1 COM1A0 COM1B1 COM1B0 – – WGM11 WGM10 TCCR1A
Read/Write R/W R/W R/W R/W R R R/W R/W
Initial Value 0 0 0 0 0 0 0 0
Table 43. Compare Output Mode, non-PWM
COM1A1/COM1B1 COM1A0/COM1B0 Description
0 0 Normal port operation, OC1A/OC1B
disconnected.
0 1 Toggle OC1A/OC1B on Compare Match.
1 0 Clear OC1A/OC1B on Compare Match (Set
output to low level).
1 1 Set OC1A/OC1B on Compare Match (Set output
to high level).
Table 44. Compare Output Mode, Fast PWM(1)
COM1A1/COM1B1 COM1A0/COM1B0 Description
0 0 Normal port operation, OC1A/OC1B
disconnected.
0 1 WGM13=0: Normal port operation, OC1A/OC1B
disconnected.
WGM13=1: Toggle OC1A on Compare Match,
OC1B reserved.
1 0 Clear OC1A/OC1B on Compare Match, set
OC1A/OC1B at TOP
1 1 Set OC1A/OC1B on Compare Match, clear
OC1A/OC1B at TOP105
2543L–AVR–08/10
ATtiny2313
Note: 1. A special case occurs when OCR1A/OCR1B equals TOP and COM1A1/COM1B1 is set. In
this case the compare match is ignored, but the set or clear is done at TOP. See “Fast PWM
Mode” on page 96. for more details.
Table 45 shows the COM1x1:0 bit functionality when the WGM13:0 bits are set to the phase correct
or the phase and frequency correct, PWM mode.
Note: 1. A special case occurs when OCR1A/OCR1B equals TOP and COM1A1/COM1B1 is set. See
“Phase Correct PWM Mode” on page 98. for more details.
• Bit 1:0 – WGM11:0: Waveform Generation Mode
Combined with the WGM13:2 bits found in the TCCR1B Register, these bits control the counting
sequence of the counter, the source for maximum (TOP) counter value, and what type of waveform
generation to be used, see Table 46. Modes of operation supported by the Timer/Counter
unit are: Normal mode (counter), Clear Timer on Compare match (CTC) mode, and three types
of Pulse Width Modulation (PWM) modes. (See “Modes of Operation” on page 94.).
Table 45. Compare Output Mode, Phase Correct and Phase and Frequency Correct PWM(1)
COM1A1/COM1B1 COM1A0/COM1B0 Description
0 0 Normal port operation, OC1A/OC1B
disconnected.
0 1 WGM13=0: Normal port operation, OC1A/OC1B
disconnected.
WGM13=1: Toggle OC1A on Compare Match,
OC1B reserved.
1 0 Clear OC1A/OC1B on Compare Match when upcounting.
Set OC1A/OC1B on Compare Match
when downcounting.
1 1 Set OC1A/OC1B on Compare Match when upcounting.
Clear OC1A/OC1B on Compare Match
when downcounting.106
2543L–AVR–08/10
ATtiny2313
Note: 1. The CTC1 and PWM11:0 bit definition names are obsolete. Use the WGM12:0 definitions. However, the functionality and
location of these bits are compatible with previous versions of the timer.
Table 46. Waveform Generation Mode Bit Description(1)
Mode WGM13
WGM12
(CTC1)
WGM11
(PWM11)
WGM10
(PWM10)
Timer/Counter Mode of
Operation TOP
Update of
OCR1x at
TOV1 Flag
Set on
0 0 0 0 0 Normal 0xFFFF Immediate MAX
1 0 0 0 1 PWM, Phase Correct, 8-bit 0x00FF TOP BOTTOM
2 0 0 1 0 PWM, Phase Correct, 9-bit 0x01FF TOP BOTTOM
3 0 0 1 1 PWM, Phase Correct, 10-bit 0x03FF TOP BOTTOM
4 0 1 0 0 CTC OCR1A Immediate MAX
5 0 1 0 1 Fast PWM, 8-bit 0x00FF TOP TOP
6 0 1 1 0 Fast PWM, 9-bit 0x01FF TOP TOP
7 0 1 1 1 Fast PWM, 10-bit 0x03FF TOP TOP
8 1 0 0 0 PWM, Phase and Frequency
Correct
ICR1 BOTTOM BOTTOM
9 1 0 0 1 PWM, Phase and Frequency
Correct
OCR1A BOTTOM BOTTOM
10 1 0 1 0 PWM, Phase Correct ICR1 TOP BOTTOM
11 1 0 1 1 PWM, Phase Correct OCR1A TOP BOTTOM
12 1 1 0 0 CTC ICR1 Immediate MAX
13 1 1 0 1 (Reserved) – – –
14 1 1 1 0 Fast PWM ICR1 TOP TOP
15 1 1 1 1 Fast PWM OCR1A TOP TOP107
2543L–AVR–08/10
ATtiny2313
Timer/Counter1
Control Register B –
TCCR1B
• Bit 7 – ICNC1: Input Capture Noise Canceler
Setting this bit (to one) activates the Input Capture Noise Canceler. When the noise canceler is
activated, the input from the Input Capture pin (ICP1) is filtered. The filter function requires four
successive equal valued samples of the ICP1 pin for changing its output. The Input Capture is
therefore delayed by four Oscillator cycles when the noise canceler is enabled.
• Bit 6 – ICES1: Input Capture Edge Select
This bit selects which edge on the Input Capture pin (ICP1) that is used to trigger a capture
event. When the ICES1 bit is written to zero, a falling (negative) edge is used as trigger, and
when the ICES1 bit is written to one, a rising (positive) edge will trigger the capture.
When a capture is triggered according to the ICES1 setting, the counter value is copied into the
Input Capture Register (ICR1). The event will also set the Input Capture Flag (ICF1), and this
can be used to cause an Input Capture Interrupt, if this interrupt is enabled.
When the ICR1 is used as TOP value (see description of the WGM13:0 bits located in the
TCCR1A and the TCCR1B Register), the ICP1 is disconnected and consequently the Input Capture
function is disabled.
• Bit 5 – Reserved Bit
This bit is reserved for future use. For ensuring compatibility with future devices, this bit must be
written to zero when TCCR1B is written.
• Bit 4:3 – WGM13:2: Waveform Generation Mode
See TCCR1A Register description.
• Bit 2:0 – CS12:0: Clock Select
The three Clock Select bits select the clock source to be used by the Timer/Counter, see Figure
49 and Figure 50.
If external pin modes are used for the Timer/Counter1, transitions on the T1 pin will clock the
counter even if the pin is configured as an output. This feature allows software control of the
counting.
Bit 7 6 5 4 3 2 1 0
ICNC1 ICES1 – WGM13 WGM12 CS12 CS11 CS10 TCCR1B
Read/Write R/W R/W R R/W R/W R/W R/W R/W
Initial Value 0 0 0 0 0 0 0 0
Table 47. Clock Select Bit Description
CS12 CS11 CS10 Description
0 0 0 No clock source (Timer/Counter stopped).
0 0 1 clkI/O/1 (No prescaling)
0 1 0 clkI/O/8 (From prescaler)
0 1 1 clkI/O/64 (From prescaler)
1 0 0 clkI/O/256 (From prescaler)
1 0 1 clkI/O/1024 (From prescaler)
1 1 0 External clock source on T1 pin. Clock on falling edge.
1 1 1 External clock source on T1 pin. Clock on rising edge.108
2543L–AVR–08/10
ATtiny2313
Timer/Counter1
Control Register C –
TCCR1C
• Bit 7 – FOC1A: Force Output Compare for Channel A
• Bit 6 – FOC1B: Force Output Compare for Channel B
The FOC1A/FOC1B bits are only active when the WGM13:0 bits specifies a non-PWM mode.
However, for ensuring compatibility with future devices, these bits must be set to zero when
TCCR1A is written when operating in a PWM mode. When writing a logical one to the
FOC1A/FOC1B bit, an immediate compare match is forced on the Waveform Generation unit.
The OC1A/OC1B output is changed according to its COM1x1:0 bits setting. Note that the
FOC1A/FOC1B bits are implemented as strobes. Therefore it is the value present in the
COM1x1:0 bits that determine the effect of the forced compare.
A FOC1A/FOC1B strobe will not generate any interrupt nor will it clear the timer in Clear Timer
on Compare match (CTC) mode using OCR1A as TOP.
The FOC1A/FOC1B bits are always read as zero.
Timer/Counter1 –
TCNT1H and TCNT1L
The two Timer/Counter I/O locations (TCNT1H and TCNT1L, combined TCNT1) give direct
access, both for read and for write operations, to the Timer/Counter unit 16-bit counter. To
ensure that both the high and low bytes are read and written simultaneously when the CPU
accesses these registers, the access is performed using an 8-bit temporary high byte register
(TEMP). This temporary register is shared by all the other 16-bit registers. See “Accessing 16-bit
Registers” on page 84.
Modifying the counter (TCNT1) while the counter is running introduces a risk of missing a compare
match between TCNT1 and one of the OCR1x Registers.
Writing to the TCNT1 Register blocks (removes) the compare match on the following timer clock
for all compare units.
Output Compare
Register 1 A –
OCR1AH and OCR1AL
Bit 7 6 5 4 3 2 1 0
FOC1A FOC1B – – – – – – TCCR1C
Read/Write W W R R R R R R
Initial Value 0 0 0 0 0 0 0 0
Bit 7 6 5 4 3 2 1 0
TCNT1[15:8] TCNT1H
TCNT1[7:0] TCNT1L
Read/Write R/W R/W R/W R/W R/W R/W R/W R/W
Initial Value 0 0 0 0 0 0 0 0
Bit 7 6 5 4 3 2 1 0
OCR1A[15:8] OCR1AH
OCR1A[7:0] OCR1AL
Read/Write R/W R/W R/W R/W R/W R/W R/W R/W
Initial Value 0 0 0 0 0 0 0 0109
2543L–AVR–08/10
ATtiny2313
Output Compare
Register 1 B -
OCR1BH and OCR1BL
The Output Compare Registers contain a 16-bit value that is continuously compared with the
counter value (TCNT1). A match can be used to generate an Output Compare interrupt, or to
generate a waveform output on the OC1x pin.
The Output Compare Registers are 16-bit in size. To ensure that both the high and low bytes are
written simultaneously when the CPU writes to these registers, the access is performed using an
8-bit temporary high byte register (TEMP). This temporary register is shared by all the other 16-
bit registers. See “Accessing 16-bit Registers” on page 84.
Input Capture Register
1 – ICR1H and ICR1L
The Input Capture is updated with the counter (TCNT1) value each time an event occurs on the
ICP1 pin (or optionally on the Analog Comparator output for Timer/Counter1). The Input Capture
can be used for defining the counter TOP value.
The Input Capture Register is 16-bit in size. To ensure that both the high and low bytes are read
simultaneously when the CPU accesses these registers, the access is performed using an 8-bit
temporary high byte register (TEMP). This temporary register is shared by all the other 16-bit
registers. See “Accessing 16-bit Registers” on page 84.
Timer/Counter
Interrupt Mask
Register – TIMSK
• Bit 7 – TOIE1: Timer/Counter1, Overflow Interrupt Enable
When this bit is written to one, and the I-flag in the Status Register is set (interrupts globally
enabled), the Timer/Counter1 Overflow interrupt is enabled. The corresponding Interrupt Vector
(See “Interrupts” on page 44.) is executed when the TOV1 flag, located in TIFR, is set.
• Bit 6 – OCIE1A: Timer/Counter1, Output Compare A Match Interrupt Enable
When this bit is written to one, and the I-flag in the Status Register is set (interrupts globally
enabled), the Timer/Counter1 Output Compare A Match interrupt is enabled. The corresponding
Interrupt Vector (See “Interrupts” on page 44.) is executed when the OCF1A flag, located in
TIFR, is set.
• Bit 5 – OCIE1B: Timer/Counter1, Output Compare B Match Interrupt Enable
When this bit is written to one, and the I-flag in the Status Register is set (interrupts globally
enabled), the Timer/Counter1 Output Compare B Match interrupt is enabled. The corresponding
Interrupt Vector (See “Interrupts” on page 44.) is executed when the OCF1B flag, located in
TIFR, is set.
• Bit 3 – ICIE1: Timer/Counter1, Input Capture Interrupt Enable
Bit 7 6 5 4 3 2 1 0
OCR1B[15:8] OCR1BH
OCR1B[7:0] OCR1BL
Read/Write R/W R/W R/W R/W R/W R/W R/W R/W
Initial Value 0 0 0 0 0 0 0 0
Bit 7 6 5 4 3 2 1 0
ICR1[15:8] ICR1H
ICR1[7:0] ICR1L
Read/Write R/W R/W R/W R/W R/W R/W R/W R/W
Initial Value 0 0 0 0 0 0 0 0
Bit 7 6 5 4 3 2 1 0
TOIE1 OCIE1A OCIE1B – ICIE1 OCIE0B TOIE0 OCIE0A TIMSK
Read/Write R/W R/W R/W R R/W R/W R/W R/W
Initial Value 0 0 0 0 0 0 0 0110
2543L–AVR–08/10
ATtiny2313
When this bit is written to one, and the I-flag in the Status Register is set (interrupts globally
enabled), the Timer/Counter1 Input Capture interrupt is enabled. The corresponding Interrupt
Vector (See “Interrupts” on page 44.) is executed when the ICF1 flag, located in TIFR, is set.
Timer/Counter
Interrupt Flag Register
– TIFR
• Bit 7 – TOV1: Timer/Counter1, Overflow Flag
The setting of this flag is dependent of the WGM13:0 bits setting. In Normal and CTC modes,
the TOV1 flag is set when the timer overflows. Refer to Table 46 on page 106 for the TOV1 flag
behavior when using another WGM13:0 bit setting.
TOV1 is automatically cleared when the Timer/Counter1 Overflow Interrupt Vector is executed.
Alternatively, TOV1 can be cleared by writing a logic one to its bit location.
• Bit 6 – OCF1A: Timer/Counter1, Output Compare A Match Flag
This flag is set in the timer clock cycle after the counter (TCNT1) value matches the Output
Compare Register A (OCR1A).
Note that a Forced Output Compare (FOC1A) strobe will not set the OCF1A flag.
OCF1A is automatically cleared when the Output Compare Match A Interrupt Vector is executed.
Alternatively, OCF1A can be cleared by writing a logic one to its bit location.
• Bit 5 – OCF1B: Timer/Counter1, Output Compare B Match Flag
This flag is set in the timer clock cycle after the counter (TCNT1) value matches the Output
Compare Register B (OCR1B).
Note that a Forced Output Compare (FOC1B) strobe will not set the OCF1B flag.
OCF1B is automatically cleared when the Output Compare Match B Interrupt Vector is executed.
Alternatively, OCF1B can be cleared by writing a logic one to its bit location.
• Bit 3 – ICF1: Timer/Counter1, Input Capture Flag
This flag is set when a capture event occurs on the ICP1 pin. When the Input Capture Register
(ICR1) is set by the WGM13:0 to be used as the TOP value, the ICF1 flag is set when the counter
reaches the TOP value.
ICF1 is automatically cleared when the Input Capture Interrupt Vector is executed. Alternatively,
ICF1 can be cleared by writing a logic one to its bit location.
Bit 7 6 5 4 3 2 1 0
TOV1 OCF1A OCF1B – ICF1 OCF0B TOV0 OCF0A TIFR
Read/Write R/W R/W R/W R R/W R/W R/W R/W
Initial Value 0 0 0 0 0 0 0 0111
2543L–AVR–08/10
ATtiny2313
USART The Universal Synchronous and Asynchronous serial Receiver and Transmitter (USART) is a
highly flexible serial communication device. The main features are:
• Full Duplex Operation (Independent Serial Receive and Transmit Registers)
• Asynchronous or Synchronous Operation
• Master or Slave Clocked Synchronous Operation
• High Resolution Baud Rate Generator
• Supports Serial Frames with 5, 6, 7, 8, or 9 Data Bits and 1 or 2 Stop Bits
• Odd or Even Parity Generation and Parity Check Supported by Hardware
• Data OverRun Detection
• Framing Error Detection
• Noise Filtering Includes False Start Bit Detection and Digital Low Pass Filter
• Three Separate Interrupts on TX Complete, TX Data Register Empty and RX Complete
• Multi-processor Communication Mode
• Double Speed Asynchronous Communication Mode
Overview A simplified block diagram of the USART Transmitter is shown in Figure 53. CPU accessible I/O
Registers and I/O pins are shown in bold.
Figure 53. USART Block Diagram(1)
Note: 1. Refer to Figure 1 on page 2, Table 29 on page 57, and Table 26 on page 55 for USART pin
placement.
PARITY
GENERATOR
UBRR[H:L]
UDR (Transmit)
UCSRA UCSRB UCSRC
BAUD RATE GENERATOR
TRANSMIT SHIFT REGISTER
RECEIVE SHIFT REGISTER RxD
TxD PIN
CONTROL
UDR (Receive)
PIN
CONTROL
XCK
DATA
RECOVERY
CLOCK
RECOVERY
PIN
CONTROL
TX
CONTROL
RX
CONTROL
PARITY
CHECKER
DATA BUS
OSC
SYNC LOGIC
Clock Generator
Transmitter
Receiver112
2543L–AVR–08/10
ATtiny2313
The dashed boxes in the block diagram separate the three main parts of the USART (listed from
the top): Clock Generator, Transmitter and Receiver. Control registers are shared by all units.
The Clock Generation logic consists of synchronization logic for external clock input used by
synchronous slave operation, and the baud rate generator. The XCK (Transfer Clock) pin is only
used by synchronous transfer mode. The Transmitter consists of a single write buffer, a serial
Shift Register, Parity Generator and Control logic for handling different serial frame formats. The
write buffer allows a continuous transfer of data without any delay between frames. The
Receiver is the most complex part of the USART module due to its clock and data recovery
units. The recovery units are used for asynchronous data reception. In addition to the recovery
units, the Receiver includes a Parity Checker, Control logic, a Shift Register and a two level
receive buffer (UDR). The Receiver supports the same frame formats as the Transmitter, and
can detect Frame Error, Data OverRun and Parity Errors.
AVR USART vs. AVR
UART – Compatibility
The USART is fully compatible with the AVR UART regarding:
• Bit locations inside all USART Registers.
• Baud Rate Generation.
• Transmitter Operation.
• Transmit Buffer Functionality.
• Receiver Operation.
However, the receive buffering has two improvements that will affect the compatibility in some
special cases:
• A second Buffer Register has been added. The two Buffer Registers operate as a circular
FIFO buffer. Therefore the UDR must only be read once for each incoming data! More
important is the fact that the error flags (FE and DOR) and the ninth data bit (RXB8) are
buffered with the data in the receive buffer. Therefore the status bits must always be read
before the UDR Register is read. Otherwise the error status will be lost since the buffer state
is lost.
• The Receiver Shift Register can now act as a third buffer level. This is done by allowing the
received data to remain in the serial Shift Register (see Figure 53) if the Buffer Registers are
full, until a new start bit is detected. The USART is therefore more resistant to Data OverRun
(DOR) error conditions.
The following control bits have changed name, but have same functionality and register location:
• CHR9 is changed to UCSZ2.
• OR is changed to DOR.
Clock Generation The Clock Generation logic generates the base clock for the Transmitter and Receiver. The
USART supports four modes of clock operation: Normal asynchronous, Double Speed asynchronous,
Master synchronous and Slave synchronous mode. The UMSEL bit in USART
Control and Status Register C (UCSRC) selects between asynchronous and synchronous operation.
Double Speed (asynchronous mode only) is controlled by the U2X found in the UCSRA
Register. When using synchronous mode (UMSEL = 1), the Data Direction Register for the XCK
pin (DDR_XCK) controls whether the clock source is internal (Master mode) or external (Slave
mode). The XCK pin is only active when using synchronous mode.
Figure 54 shows a block diagram of the clock generation logic.113
2543L–AVR–08/10
ATtiny2313
Figure 54. Clock Generation Logic, Block Diagram
Signal description:
txclk Transmitter clock (Internal Signal).
rxclk Receiver base clock (Internal Signal).
xcki Input from XCK pin (internal Signal). Used for synchronous slave operation.
xcko Clock output to XCK pin (Internal Signal). Used for synchronous master
operation.
fosc XTAL pin frequency (System Clock).
Internal Clock
Generation – The
Baud Rate Generator
Internal clock generation is used for the asynchronous and the synchronous master modes of
operation. The description in this section refers to Figure 54.
The USART Baud Rate Register (UBRR) and the down-counter connected to it function as a
programmable prescaler or baud rate generator. The down-counter, running at system clock
(fosc), is loaded with the UBRR value each time the counter has counted down to zero or when
the UBRRL Register is written. A clock is generated each time the counter reaches zero. This
clock is the baud rate generator clock output (= fosc/(UBRR+1)). The Transmitter divides the
baud rate generator clock output by 2, 8 or 16 depending on mode. The baud rate generator output
is used directly by the Receiver’s clock and data recovery units. However, the recovery units
use a state machine that uses 2, 8 or 16 states depending on mode set by the state of the
UMSEL, U2X and DDR_XCK bits.
Table 48 contains equations for calculating the baud rate (in bits per second) and for calculating
the UBRR value for each mode of operation using an internally generated clock source.
Note: 1. The baud rate is defined to be the transfer rate in bit per second (bps)
Prescaling
Down-Counter /2
UBRR
/4 /2
fosc
UBRR+1
Sync
Register
OSC
XCK
Pin
txclk
U2X
UMSEL
DDR_XCK
0
1
0
1
xcki
xcko
DDR_XCK rxclk 0
1
1
0
Edge
Detector
UCPOL
Table 48. Equations for Calculating Baud Rate Register Setting
Operating Mode
Equation for Calculating
Baud Rate(1)
Equation for Calculating
UBRR Value
Asynchronous Normal
mode (U2X = 0)
Asynchronous Double
Speed mode (U2X = 1)
Synchronous Master
mode
BAUD f
OSC
16( ) UBRR + 1 = -------------------------------------- UBRR f
OSC
16BAUD = ------------------------ – 1
BAUD f
OSC
8( ) UBRR + 1 = ----------------------------------- UBRR f
OSC
8BAUD = -------------------- – 1
BAUD f
OSC
2( ) UBRR + 1 = ----------------------------------- UBRR f
OSC
2BAUD = -------------------- – 1114
2543L–AVR–08/10
ATtiny2313
BAUD Baud rate (in bits per second, bps)
fOSC System Oscillator clock frequency
UBRR Contents of the UBRRH and UBRRL Registers, (0-4095)
Some examples of UBRR values for some system clock frequencies are found in Table 56 (see
page 134).
Double Speed
Operation (U2X)
The transfer rate can be doubled by setting the U2X bit in UCSRA. Setting this bit only has effect
for the asynchronous operation. Set this bit to zero when using synchronous operation.
Setting this bit will reduce the divisor of the baud rate divider from 16 to 8, effectively doubling
the transfer rate for asynchronous communication. Note however that the Receiver will in this
case only use half the number of samples (reduced from 16 to 8) for data sampling and clock
recovery, and therefore a more accurate baud rate setting and system clock are required when
this mode is used. For the Transmitter, there are no downsides.
External Clock External clocking is used by the synchronous slave modes of operation. The description in this
section refers to Figure 54 for details.
External clock input from the XCK pin is sampled by a synchronization register to minimize the
chance of meta-stability. The output from the synchronization register must then pass through
an edge detector before it can be used by the Transmitter and Receiver. This process introduces
a two CPU clock period delay and therefore the maximum external XCK clock frequency
is limited by the following equation:
Note that fosc depends on the stability of the system clock source. It is therefore recommended to
add some margin to avoid possible loss of data due to frequency variations.
Synchronous Clock
Operation
When synchronous mode is used (UMSEL = 1), the XCK pin will be used as either clock input
(Slave) or clock output (Master). The dependency between the clock edges and data sampling
or data change is the same. The basic principle is that data input (on RxD) is sampled at the
opposite XCK clock edge of the edge the data output (TxD) is changed.
Figure 55. Synchronous Mode XCK Timing.
The UCPOL bit UCRSC selects which XCK clock edge is used for data sampling and which is
used for data change. As Figure 55 shows, when UCPOL is zero the data will be changed at risf
XCK
f
OSC
4 < -----------
RxD / TxD
XCK
RxD / TxD
UCPOL = 0 XCK
UCPOL = 1
Sample
Sample115
2543L–AVR–08/10
ATtiny2313
ing XCK edge and sampled at falling XCK edge. If UCPOL is set, the data will be changed at
falling XCK edge and sampled at rising XCK edge.
Frame Formats A serial frame is defined to be one character of data bits with synchronization bits (start and stop
bits), and optionally a parity bit for error checking. The USART accepts all 30 combinations of
the following as valid frame formats:
• 1 start bit
• 5, 6, 7, 8, or 9 data bits
• no, even or odd parity bit
• 1 or 2 stop bits
A frame starts with the start bit followed by the least significant data bit. Then the next data bits,
up to a total of nine, are succeeding, ending with the most significant bit. If enabled, the parity bit
is inserted after the data bits, before the stop bits. When a complete frame is transmitted, it can
be directly followed by a new frame, or the communication line can be set to an idle (high) state.
Figure 56 illustrates the possible combinations of the frame formats. Bits inside brackets are
optional.
Figure 56. Frame Formats
St Start bit, always low.
(n) Data bits (0 to 8).
P Parity bit. Can be odd or even.
Sp Stop bit, always high.
IDLE No transfers on the communication line (RxD or TxD). An IDLE line must be
high.
The frame format used by the USART is set by the UCSZ2:0, UPM1:0 and USBS bits in UCSRB
and UCSRC. The Receiver and Transmitter use the same setting. Note that changing the setting
of any of these bits will corrupt all ongoing communication for both the Receiver and Transmitter.
The USART Character SiZe (UCSZ2:0) bits select the number of data bits in the frame. The
USART Parity mode (UPM1:0) bits enable and set the type of parity bit. The selection between
one or two stop bits is done by the USART Stop Bit Select (USBS) bit. The Receiver ignores the
second stop bit. An FE (Frame Error) will therefore only be detected in the cases where the first
stop bit is zero.
Parity Bit Calculation The parity bit is calculated by doing an exclusive-or of all the data bits. If odd parity is used, the
result of the exclusive or is inverted. The relation between the parity bit and data bits is as
follows:
Peven Parity bit using even parity
Podd Parity bit using odd parity
(IDLE) St Sp1 [Sp2] 0 2 3 4 [5] [6] [7] [8] [P] 1 (St / IDLE)
FRAME
Peven dn – 1 … d3 d2 d1 d0 0
Podd
⊕⊕⊕⊕⊕⊕
dn – 1 … d3 d2 d1 d0 ⊕⊕⊕⊕⊕⊕ 1
=
=116
2543L–AVR–08/10
ATtiny2313
dn Data bit n of the character
If used, the parity bit is located between the last data bit and first stop bit of a serial frame.
USART
Initialization
The USART has to be initialized before any communication can take place. The initialization process
normally consists of setting the baud rate, setting frame format and enabling the
Transmitter or the Receiver depending on the usage. For interrupt driven USART operation, the
Global Interrupt Flag should be cleared (and interrupts globally disabled) when doing the
initialization.
Before doing a re-initialization with changed baud rate or frame format, be sure that there are no
ongoing transmissions during the period the registers are changed. The TXC flag can be used to
check that the Transmitter has completed all transfers, and the RXC flag can be used to check
that there are no unread data in the receive buffer. Note that the TXC flag must be cleared
before each transmission (before UDR is written) if it is used for this purpose.
The following simple USART initialization code examples show one assembly and one C function
that are equal in functionality. The examples assume asynchronous operation using polling
(no interrupts enabled) and a fixed frame format. The baud rate is given as a function parameter.
For the assembly code, the baud rate parameter is assumed to be stored in the r17:r16
Registers.
Note: 1. The example code assumes that the part specific header file is included.
For I/O Registers located in extended I/O map, “IN”, “OUT”, “SBIS”, “SBIC”, “CBI”, and “SBI”
instructions must be replaced with instructions that allow access to extended I/O. Typically
“LDS” and “STS” combined with “SBRS”, “SBRC”, “SBR”, and “CBR”.
Assembly Code Example(1)
USART_Init:
; Set baud rate
out UBRRH, r17
out UBRRL, r16
; Enable receiver and transmitter
ldi r16, (1<>8);
UBRRL = (unsigned char)baud;
/* Enable receiver and transmitter */
UCSRB = (1<> 1) & 0x01;
return ((resh << 8) | resl);
}123
2543L–AVR–08/10
ATtiny2313
Note: 1. The example code assumes that the part specific header file is included.
For I/O Registers located in extended I/O map, “IN”, “OUT”, “SBIS”, “SBIC”, “CBI”, and “SBI”
instructions must be replaced with instructions that allow access to extended I/O. Typically
“LDS” and “STS” combined with “SBRS”, “SBRC”, “SBR”, and “CBR”.
The receive function example reads all the I/O Registers into the Register File before any computation
is done. This gives an optimal receive buffer utilization since the buffer location read will
be free to accept new data as early as possible.
Receive Compete Flag
and Interrupt
The USART Receiver has one flag that indicates the Receiver state.
The Receive Complete (RXC) flag indicates if there are unread data present in the receive buffer.
This flag is one when unread data exist in the receive buffer, and zero when the receive
buffer is empty (i.e., does not contain any unread data). If the Receiver is disabled (RXEN = 0),
the receive buffer will be flushed and consequently the RXC bit will become zero.
When the Receive Complete Interrupt Enable (RXCIE) in UCSRB is set, the USART Receive
Complete interrupt will be executed as long as the RXC flag is set (provided that global interrupts
are enabled). When interrupt-driven data reception is used, the receive complete routine
must read the received data from UDR in order to clear the RXC flag, otherwise a new interrupt
will occur once the interrupt routine terminates.
Receiver Error Flags The USART Receiver has three error flags: Frame Error (FE), Data OverRun (DOR) and Parity
Error (UPE). All can be accessed by reading UCSRA. Common for the error flags is that they are
located in the receive buffer together with the frame for which they indicate the error status. Due
to the buffering of the error flags, the UCSRA must be read before the receive buffer (UDR),
since reading the UDR I/O location changes the buffer read location. Another equality for the
error flags is that they can not be altered by software doing a write to the flag location. However,
all flags must be set to zero when the UCSRA is written for upward compatibility of future
USART implementations. None of the error flags can generate interrupts.
The Frame Error (FE) flag indicates the state of the first stop bit of the next readable frame
stored in the receive buffer. The FE flag is zero when the stop bit was correctly read (as one),
and the FE flag will be one when the stop bit was incorrect (zero). This flag can be used for
detecting out-of-sync conditions, detecting break conditions and protocol handling. The FE flag
is not affected by the setting of the USBS bit in UCSRC since the Receiver ignores all, except for
the first, stop bits. For compatibility with future devices, always set this bit to zero when writing to
UCSRA.
The Data OverRun (DOR) flag indicates data loss due to a receiver buffer full condition. A Data
OverRun occurs when the receive buffer is full (two characters), it is a new character waiting in
the Receive Shift Register, and a new start bit is detected. If the DOR flag is set there was one
or more serial frame lost between the frame last read from UDR, and the next frame read from
UDR. For compatibility with future devices, always write this bit to zero when writing to UCSRA.
The DOR flag is cleared when the frame received was successfully moved from the Shift Register
to the receive buffer.
The Parity Error (UPE) Flag indicates that the next frame in the receive buffer had a Parity Error
when received. If Parity Check is not enabled the UPE bit will always be read zero. For compatibility
with future devices, always set this bit to zero when writing to UCSRA. For more details see
“Parity Bit Calculation” on page 115 and “Parity Checker” on page 124.124
2543L–AVR–08/10
ATtiny2313
Parity Checker The Parity Checker is active when the high USART Parity mode (UPM1) bit is set. Type of Parity
Check to be performed (odd or even) is selected by the UPM0 bit. When enabled, the Parity
Checker calculates the parity of the data bits in incoming frames and compares the result with
the parity bit from the serial frame. The result of the check is stored in the receive buffer together
with the received data and stop bits. The Parity Error (UPE) flag can then be read by software to
check if the frame had a Parity Error.
The UPE bit is set if the next character that can be read from the receive buffer had a Parity
Error when received and the Parity Checking was enabled at that point (UPM1 = 1). This bit is
valid until the receive buffer (UDR) is read.
Disabling the Receiver In contrast to the Transmitter, disabling of the Receiver will be immediate. Data from ongoing
receptions will therefore be lost. When disabled (i.e., the RXEN is set to zero) the Receiver will
no longer override the normal function of the RxD port pin. The Receiver buffer FIFO will be
flushed when the Receiver is disabled. Remaining data in the buffer will be lost
Flushing the Receive
Buffer
The receiver buffer FIFO will be flushed when the Receiver is disabled, i.e., the buffer will be
emptied of its contents. Unread data will be lost. If the buffer has to be flushed during normal
operation, due to for instance an error condition, read the UDR I/O location until the RXC flag is
cleared. The following code example shows how to flush the receive buffer.
Note: 1. The example code assumes that the part specific header file is included.
For I/O Registers located in extended I/O map, “IN”, “OUT”, “SBIS”, “SBIC”, “CBI”, and “SBI”
instructions must be replaced with instructions that allow access to extended I/O. Typically
“LDS” and “STS” combined with “SBRS”, “SBRC”, “SBR”, and “CBR”.
Asynchronous
Data Reception
The USART includes a clock recovery and a data recovery unit for handling asynchronous data
reception. The clock recovery logic is used for synchronizing the internally generated baud rate
clock to the incoming asynchronous serial frames at the RxD pin. The data recovery logic samples
and low pass filters each incoming bit, thereby improving the noise immunity of the
Receiver. The asynchronous reception operational range depends on the accuracy of the internal
baud rate clock, the rate of the incoming frames, and the frame size in number of bits.
Assembly Code Example(1)
USART_Flush:
sbis UCSRA, RXC
ret
in r16, UDR
rjmp USART_Flush
C Code Example(1)
void USART_Flush( void )
{
unsigned char dummy;
while ( UCSRA & (1< 2 CPU clock cycles for fck < 12 MHz, 3 CPU clock cycles for fck >= 12 MHz
High:> 2 CPU clock cycles for fck < 12 MHz, 3 CPU clock cycles for fck >= 12 MHz
t
BVDV BS1 Valid to DATA valid 0 250 ns
tOLDV OE Low to DATA Valid 250 ns
tOHDZ OE High to DATA Tri-stated 250 ns
Table 76. Parallel Programming Characteristics, VCC = 5V ± 10% (Continued)
Symbol Parameter Min Typ Max Units
VCC
GND
XTAL1
SCK
MISO
MOSI
RESET
+1.8 - 5.5V173
2543L–AVR–08/10
ATtiny2313
Serial Programming
Algorithm
When writing serial data to the ATtiny2313, data is clocked on the rising edge of SCK.
When reading data from the ATtiny2313, data is clocked on the falling edge of SCK. See Figure
79, Figure 80 and Table 79 for timing details.
To program and verify the ATtiny2313 in the serial programming mode, the following sequence
is recommended (See four byte instruction formats in Table 78 on page 174):
1. Power-up sequence:
Apply power between VCC and GND while RESET and SCK are set to “0”. In some systems,
the programmer can not guarantee that SCK is held low during power-up. In this
case, RESET must be given a positive pulse of at least two CPU clock cycles duration
after SCK has been set to “0”.
2. Wait for at least 20 ms and enable serial programming by sending the Programming
Enable serial instruction to pin MOSI.
3. The serial programming instructions will not work if the communication is out of synchronization.
When in sync. the second byte (0x53), will echo back when issuing the third
byte of the Programming Enable instruction. Whether the echo is correct or not, all four
bytes of the instruction must be transmitted. If the 0x53 did not echo back, give RESET a
positive pulse and issue a new Programming Enable command.
4. The Flash is programmed one page at a time. The memory page is loaded one byte at a
time by supplying the 4 LSB of the address and data together with the Load Program
Memory Page instruction. To ensure correct loading of the page, the data low byte must
be loaded before data high byte is applied for a given address. The Program Memory
Page is stored by loading the Write Program Memory Page instruction with the 6 MSB of
the address. If polling (RDY/BSY) is not used, the user must wait at least tWD_FLASH before
issuing the next page. (See Table 77 on page 174.) Accessing the serial programming
interface before the Flash write operation completes can result in incorrect programming.
5. A: The EEPROM array is programmed one byte at a time by supplying the address and
data together with the appropriate Write instruction. An EEPROM memory location is first
automatically erased before new data is written. If polling (RDY/BSY) is not used, the user
must wait at least tWD_EEPROM before issuing the next byte. (See Table 77 on page 174.)
In a chip erased device, no 0xFFs in the data file(s) need to be programmed.
B: The EEPROM array is programmed one page at a time. The Memory page is loaded
one byte at a time by supplying the 2 LSB of the address and data together with the Load
EEPROM Memory Page instruction. The EEPROM Memory Page is stored by loading
the Write EEPROM Memory Page Instruction with the 5 MSB of the address. When using
EEPROM page access only byte locations loaded with the Load EEPROM Memory Page
instruction is altered. The remaining locations remain unchanged. If polling (RDY/BSY) is
not used, the used must wait at least tWD_EEPROM before issuing the next page (See Table
77 on page 174). In a chip erased device, no 0xFF in the data file(s) need to be
programmed.
6. Any memory location can be verified by using the Read instruction which returns the content
at the selected address at serial output MISO.
7. At the end of the programming session, RESET can be set high to commence normal
operation.
8. Power-off sequence (if needed):
Set RESET to “1”.
Turn VCC power off.174
2543L–AVR–08/10
ATtiny2313
Figure 79. Serial Programming Waveforms
Table 77. Minimum Wait Delay Before Writing the Next Flash or EEPROM Location
Symbol Minimum Wait Delay
tWD_FLASH 4.5 ms
tWD_EEPROM 4.0 ms
tWD_ERASE 9.0 ms
tWD_FUSE 4.5 ms
MSB
MSB
LSB
LSB
SERIAL CLOCK INPUT
(SCK)
SERIAL DATA INPUT
(MOSI)
(MISO)
SAMPLE
SERIAL DATA OUTPUT
Table 78. Serial Programming Instruction Set
Instruction
Instruction Format
Byte 1 Byte 2 Byte 3 Byte4 Operation
Programming Enable 1010 1100 0101 0011 xxxx xxxx xxxx xxxx Enable Serial Programming after
RESET goes low.
Chip Erase 1010 1100 100x xxxx xxxx xxxx xxxx xxxx Chip Erase EEPROM and Flash.
Read Program Memory 0010 H000 0000 00aa bbbb bbbb oooo oooo Read H (high or low) data o from
Program memory at word address a:b.
Load Program Memory Page 0100 H000 000x xxxx xxxx bbbb iiii iiii Write H (high or low) data i to Program
Memory page at word address b. Data
low byte must be loaded before Data
high byte is applied within the same
address.
Write Program Memory Page 0100 1100 0000 00aa bbbb xxxx xxxx xxxx Write Program Memory Page at
address a:b.
Read EEPROM Memory 1010 0000 000x xxxx xbbb bbbb oooo oooo Read data o from EEPROM memory at
address b.
Write EEPROM Memory 1100 0000 000x xxxx xbbb bbbb iiii iiii Write data i to EEPROM memory at
address b.
Load EEPROM Memory
Page (page access)
1100 0001 0000 0000 0000 00bb iiii iiii Load data i to EEPROM memory page
buffer. After data is loaded, program
EEPROM page.
Write EEPROM Memory
Page (page access)
1100 0010 00xx xxxx xbbb bb00 xxxx xxxx
Write EEPROM page at address b.175
2543L–AVR–08/10
ATtiny2313
Note: a = address high bits, b = address low bits, H = 0 - Low byte, 1 - High Byte, o = data out, i = data in, x = don’t care
Read Lock bits 0101 1000 0000 0000 xxxx xxxx xxoo oooo Read Lock bits. “0” = programmed, “1”
= unprogrammed. See Table 64 on
page 158 for details.
Write Lock bits 1010 1100 111x xxxx xxxx xxxx 11ii iiii Write Lock bits. Set bits = “0” to
program Lock bits. See Table 64 on
page 158 for details.
Read Signature Byte 0011 0000 000x xxxx xxxx xxbb oooo oooo Read Signature Byte o at address b.
Write Fuse bits 1010 1100 1010 0000 xxxx xxxx iiii iiii Set bits = “0” to program, “1” to
unprogram.
Write Fuse High bits 1010 1100 1010 1000 xxxx xxxx iiii iiii Set bits = “0” to program, “1” to
unprogram.
Write Extended Fuse Bits 1010 1100 1010 0100 xxxx xxxx xxxx xxxi Set bits = “0” to program, “1” to
unprogram.
Read Fuse bits 0101 0000 0000 0000 xxxx xxxx oooo oooo Read Fuse bits. “0” = programmed, “1”
= unprogrammed.
Read Fuse High bits 0101 1000 0000 1000 xxxx xxxx oooo oooo Read Fuse High bits. “0” = programmed,
“1” = unprogrammed.
Read Extended Fuse Bits 0101 0000 0000 1000 xxxx xxxx oooo oooo Read Extended Fuse bits. “0” = programmed,
“1” = unprogrammed.
Read Calibration Byte 0011 1000 000x xxxx 0000 000b oooo oooo Read Calibration Byte at address b.
Poll RDY/BSY 1111 0000 0000 0000 xxxx xxxx xxxx xxxo If o = “1”, a programming operation is
still busy. Wait until this bit returns to
“0” before applying another command.
Table 78. Serial Programming Instruction Set
Instruction
Instruction Format
Byte 1 Byte 2 Byte 3 Byte4 Operation176
2543L–AVR–08/10
ATtiny2313
Serial Programming
Characteristics
Figure 80. Serial Programming Timing
Note: 1. 2 tCLCL for fck < 12 MHz, 3 tCLCL for fck >= 12 MHz
Table 79. Serial Programming Characteristics, TA = -40°C to +85°C, VCC = 2.7V - 5.5V (Unless
Otherwise Noted)
Symbol Parameter Min Typ Max Units
1/tCLCL Oscillator Frequency (ATtiny2313L) 0 10 MHz
tCLCL Oscillator Period (ATtiny2313L) 125 ns
1/tCLCL
Oscillator Frequency (ATtiny2313, VCC = 4.5V -
5.5V) 0 20 MHz
tCLCL
Oscillator Period (ATtiny2313, VCC = 4.5V -
5.5V) 67 ns
tSHSL SCK Pulse Width High 2 tCLCL* ns
tSLSH SCK Pulse Width Low 2 tCLCL* ns
tOVSH MOSI Setup to SCK High tCLCL ns
tSHOX MOSI Hold after SCK High 2 tCLCL ns
tSLIV SCK Low to MISO Valid 100 ns
MOSI
MISO
SCK
t
OVSH
t
SHSL
t t
SHOX SLSH
t
SLIV177
2543L–AVR–08/10
ATtiny2313
Electrical Characteristics
Absolute Maximum Ratings*
DC Characteristics
Operating Temperature.................................. -55°C to +125°C *NOTICE: Stresses beyond those listed under “Absolute
Maximum Ratings” may cause permanent damage
to the device. This is a stress rating only and
functional operation of the device at these or
other conditions beyond those indicated in the
operational sections of this specification is not
implied. Exposure to absolute maximum rating
conditions for extended periods may affect
device reliability.
Storage Temperature ..................................... -65°C to +150°C
Voltage on any Pin except RESET
with respect to Ground ................................-0.5V to VCC+0.5V
Voltage on RESET with respect to Ground......-0.5V to +13.0V
Maximum Operating Voltage ............................................ 6.0V
DC Current per I/O Pin ............................................... 40.0 mA
DC Current VCC and GND Pins ................................ 200.0 mA
TA = -40°C to +85°C, VCC = 1.8V to 5.5V (unless otherwise noted)(1)
Symbol Parameter Condition Min. Typ.(2) Max. Units
VIL
Input Low Voltage except
XTAL1 and RESET pin
VCC = 1.8V - 2.4V
VCC = 2.4V - 5.5V -0.5 0.2VCC(3)
0.3VCC(3) V
VIH
Input High-voltage except
XTAL1 and RESET pins
VCC = 1.8V - 2.4V
VCC = 2.4V - 5.5V
0.7VCC(4)
0.6VCC(4) VCC +0.5 V
VIL1
Input Low Voltage
XTAL1 pin
VCC = 1.8V - 5.5V -0.5 0.1VCC(3) V
VIH1
Input High-voltage
XTAL1 pin
VCC = 1.8V - 2.4V
VCC = 2.4V - 5.5V
0.8VCC(4)
0.7VCC(4) VCC +0.5 V
VIL2
Input Low Voltage
RESET pin VCC = 1.8V - 5.5V -0.5 0.2VCC(3) V
VIH2
Input High-voltage
RESET pin VCC = 1.8V - 5.5V 0.9VCC(4) VCC +0.5 V
VIL3
Input Low Voltage
RESET pin as I/O
VCC = 1.8V - 2.4V
VCC = 2.4V - 5.5V -0.5 0.2VCC(3)
0.3VCC(3) V
VIH3
Input High-voltage
RESET pin as I/O
VCC = 1.8V - 2.4V
VCC = 2.4V - 5.5V
0.7VCC(4)
0.6VCC(4) VCC +0.5 V
VOL
Output Low Voltage(5)
(Port A, Port B, Port D)
I
OL = 20 mA, VCC = 5V
IOL = 10 mA, VCC = 3V
0.7
0.5
V
V
VOH
Output High-voltage(6)
(Port A, Port B, Port D)
I
OH = -20 mA, VCC = 5V
IOH = -10 mA, VCC = 3V
4.2
2.5
V
V
IIL
Input Leakage
Current I/O Pin
VCC = 5.5V, pin low
(absolute value) 1 µA
IIH
Input Leakage
Current I/O Pin
VCC = 5.5V, pin high
(absolute value) 1 µA
RRST Reset Pull-up Resistor 30 60 kΩ
Rpu I/O Pin Pull-up Resistor 20 50 kΩ178
2543L–AVR–08/10
ATtiny2313
Notes: 1. All DC Characteristics contained in this data sheet are based on simulation and characterization of other AVR microcontrollers
manufactured in the same process technology. These values are preliminary values representing design targets, and
will be updated after characterization of actual silicon.
2. Typical values at +25°C.
3. “Max” means the highest value where the pin is guaranteed to be read as low.
4. “Min” means the lowest value where the pin is guaranteed to be read as high.
5. Although each I/O port can sink more than the test conditions (10 mA at VCC = 5V, 5 mA at VCC = 3V) under steady state
conditions (non-transient), the following must be observed:
1] The sum of all IOL, for all ports, should not exceed 60 mA.
If IOL exceeds the test condition, VOL may exceed the related specification. Pins are not guaranteed to sink current greater
than the listed test condition.
6. Although each I/O port can source more than the test conditions (10 mA at VCC = 5V, 5 mA at VCC = 3V) under steady state
conditions (non-transient), the following must be observed:
1] The sum of all IOH, for all ports, should not exceed 60 mA.
If IOH exceeds the test condition, VOH may exceed the related specification. Pins are not guaranteed to source current
greater than the listed test condition.
ICC
Power Supply Current
Active 1MHz, VCC = 2V 0.35 mA
Active 4MHz, VCC = 3V 2 mA
Active 8MHz, VCC = 5V 6 mA
Idle 1MHz, VCC = 2V 0.08 0.2 mA
Idle 4MHz, VCC = 3V 0.41 1 mA
Idle 8MHz, VCC = 5V 1.6 3 mA
Power-down mode
WDT enabled, VCC = 3V < 3 6 µA
WDT disabled, VCC = 3V < 0.5 2 µA
VACIO
Analog Comparator
Input Offset Voltage
VCC = 5V
Vin = VCC/2 < 10 40 mV
IACLK
Analog Comparator
Input Leakage Current
VCC = 5V
Vin = VCC/2 -50 50 nA
t
ACPD
Analog Comparator
Propagation Delay
VCC = 2.7V
VCC = 5.0V
750
500 ns
TA = -40°C to +85°C, VCC = 1.8V to 5.5V (unless otherwise noted)(1) (Continued)
Symbol Parameter Condition Min. Typ.(2) Max. Units179
2543L–AVR–08/10
ATtiny2313
External Clock
Drive Waveforms
Figure 81. External Clock Drive Waveforms
External Clock
Drive
VIL1
VIH1
Table 80. External Clock Drive (Estimated Values)
Symbol Parameter
VCC = 1.8 - 5.5V VCC = 2.7 - 5.5V VCC = 4.5 - 5.5V
Min. Max. Min. Max. Min. Max. Units
1/tCLCL
Oscillator
Frequency 0 4 0 10 0 20 MHz
tCLCL Clock Period 250 100 50 ns
tCHCX High Time 100 40 20 ns
tCLCX Low Time 100 40 20 ns
tCLCH Rise Time 2.0 1.6 0.5 μs
tCHCL Fall Time 2.0 1.6 0.5 μs
ΔtCLCL
Change in
period from one
clock cycle to
the next
2 2 2%180
2543L–AVR–08/10
ATtiny2313
Maximum Speed
vs. VCC
Maximum frequency is dependent on VCC. As shown in Figure 82 and Figure 83, the Maximum
Frequency vs. VCC curve is linear between 1.8V < VCC < 2.7V and between 2.7V < VCC < 4.5V.
Figure 82. Maximum Frequency vs. VCC, ATtiny2313V
Figure 83. Maximum Frequency vs. VCC, ATtiny2313
10 MHz
4 MHz
1.8V 2.7V 5.5V
Safe Operating Area
20 MHz
10 MHz
2.7V 4.5V 5.5V
Safe Operating Area181
2543L–AVR–08/10
ATtiny2313
ATtiny2313
Typical
Characteristics
The following charts show typical behavior. These figures are not tested during manufacturing.
All current consumption measurements are performed with all I/O pins configured as inputs and
with internal pull-ups enabled. A sine wave generator with rail-to-rail output is used as clock
source.
The power consumption in Power-down mode is independent of clock selection.
The current consumption is a function of several factors such as: operating voltage, operating
frequency, loading of I/O pins, switching rate of I/O pins, code executed and ambient temperature.
The dominating factors are operating voltage and frequency.
The current drawn from capacitive loaded pins may be estimated (for one pin) as CL*VCC*f where
CL = load capacitance, VCC = operating voltage and f = average switching frequency of I/O pin.
The parts are characterized at frequencies higher than test limits. Parts are not guaranteed to
function properly at frequencies higher than the ordering code indicates.
The difference between current consumption in Power-down mode with Watchdog Timer
enabled and Power-down mode with Watchdog Timer disabled represents the differential current
drawn by the Watchdog Timer.
Active Supply Current Figure 84. Active Supply Current vs. Frequency (0.1 - 1.0 MHz)
ACTIVE SUPPLY CURRENT vs. LOW FREQUENCY
0.1 - 1.0 MHz
5.5 V
5.0 V
4.5 V
4.0 V
3.3 V
2.7 V
1.8 V
0
0.2
0.4
0.6
0.8
1
1.2
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1
Frequency (MHz)
ICC (mA)182
2543L–AVR–08/10
ATtiny2313
Figure 85. Active Supply Current vs. Frequency (1 - 20 MHz)
Figure 86. Active Supply Current vs. VCC (Internal RC Oscillator, 8 MHz)
ACTIVE SUPPLY CURRENT vs. FREQUENCY
1 - 20 MHz
5.5 V
5.0 V
4.5 V
4.0 V
3.3 V
2.7 V
1.8 V
0
2
4
6
8
10
12
14
0 2 4 6 8 10 12 14 16 18 20
Frequency (MHz)
ICC (mA)
ACTIVE SUPPLY CURRENT vs. VCC
INTERNAL RC OSCILLATOR, 8 MHz
85 ˚C
25 ˚C
-40 ˚C
0
1
2
3
4
5
6
7
8
9
1.5 2 2.5 3 3.5 4 4.5 5 5.5
VCC (V)
ICC (mA)183
2543L–AVR–08/10
ATtiny2313
Figure 87. Active Supply Current vs. VCC (Internal RC Oscillator, 4 MHz)
Figure 88. Active Supply Current vs. VCC (Internal RC Oscillator, 1 MHz)
ACTIVE SUPPLY CURRENT vs. Vcc
INTERNAL RC OSCILLATOR, 4 MHz
85 °C
25 °C
-40 °C
0
1
2
3
4
5
6
1.5 2 2.5 3 3.5 4 4.5 5 5.5
Vcc (V)
Icc (mA)
ACTIVE SUPPLY CURRENT vs. Vcc
INTERNAL RC OSCILLATOR, 1 MHz
85 °C
25 °C
-40 °C
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
1.5 2 2.5 3 3.5 4 4.5 5 5.5
Vcc (V)
Icc (mA)184
2543L–AVR–08/10
ATtiny2313
Figure 89. Active Supply Current vs. VCC (Internal RC Oscillator, 0.5 MHz)
Figure 90. Active Supply Current vs. VCC (Internal RC Oscillator, 128 KHz)
ACTIVE SUPPLY CURRENT vs. Vcc
INTERNAL RC OSCILLATOR, 0.5 MHz
85 °C
25 °C
-40 °C
0
0.2
0.4
0.6
0.8
1
1.2
1.5 2 2.5 3 3.5 4 4.5 5 5.5
Vcc (V)
Icc (mA)
ACTIVE SUPPLY CURRENT vs. Vcc
INTERNAL RC OSCILLATOR, 128 KHz
85 °C
25 °C
-40 °C
0
0.02
0.04
0.06
0.08
0.1
0.12
0.14
1.5 2 2.5 3 3.5 4 4.5 5 5.5 6
Vcc (V)
Icc (mA)185
2543L–AVR–08/10
ATtiny2313
Idle Supply Current Figure 91. Idle Supply Current vs. Frequency (0.1 - 1.0 MHz)
Figure 92. Idle Supply Current vs. Frequency (1 - 20 MHz)
IDLE SUPPLY CURRENT vs. FREQUENCY
0.1 - 1.0 MHz
5.5 V
5.0 V
4.5 V
4.0 V
3.3 V
2.7 V
1.8 V
0
0.05
0.1
0.15
0.2
0.25
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1
Frequency (MHz)
Icc (m A)
IDLE SUPPLY CURRENT vs. FREQUENCY
1 - 20 MHz
5.5 V
5.0 V
4.5 V
4.0 V
3.3 V
2.7 V
1.8 V
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
0 2 4 6 8 10 12 14 16 18 20
Frequency (MHz)
Icc (mA)186
2543L–AVR–08/10
ATtiny2313
Figure 93. Idle Supply Current vs. VCC (Internal RC Oscillator, 8 MHz)
Figure 94. Idle Supply Current vs. VCC (Internal RC Oscillator, 4 MHz)
IDLE SUPPLY CURRENT vs. Vcc
INTERNAL RC OSCILLATOR, 8 MHz
85 °C
25 °C
-40 °C
0
0.5
1
1.5
2
2.5
3
1.5 2 2.5 3 3.5 4 4.5 5 5.5
Vcc (V)
Icc (mA)
IDLE SUPPLY CURRENT vs. Vcc
INTERNAL RC OSCILLATOR, 4 MHz
85 °C
25 °C
-40 °C
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.5 2 2.5 3 3.5 4 4.5 5 5.5
Vcc (V)
Icc (mA)187
2543L–AVR–08/10
ATtiny2313
Figure 95. Idle Supply Current vs. VCC (Internal RC Oscillator, 1 MHz)
Figure 96. Idle Supply Current vs. VCC (Internal RC Oscillator, 0.5 MHz)
IDLE SUPPLY CURRENT vs. Vcc
INTERNAL RC OSCILLATOR, 1 MHz
85 °C
25 °C
-40 °C
0
0.1
0.2
0.3
0.4
0.5
1.5 2 2.5 3 3.5 4 4.5 5 5.5
Vcc (V)
Icc (mA)
IDLE SUPPLY CURRENT vs. Vcc
INTERNAL RC OSCILLATOR, 0.5 MHz
85 °C
25 °C
-40 °C
0
0.05
0.1
0.15
0.2
0.25
0.3
1.5 2 2.5 3 3.5 4 4.5 5 5.5
Vcc (V)
Icc (mA)188
2543L–AVR–08/10
ATtiny2313
Figure 97. Idle Supply Current vs. VCC (Internal RC Oscillator, 128 KHz)
Power-down Supply
Current
Figure 98. Power-down Supply Current vs. VCC (Watchdog Timer Disabled)
IDLE SUPPLY CURRENT vs. Vcc
INTERNAL RC OSCILLATOR, 128 KHz
85 °C
25 °C
-40 °C
0
0.005
0.01
0.015
0.02
0.025
0.03
0.035
1.5 2 2.5 3 3.5 4 4.5 5 5.5
Vcc (V)
Icc (m A)
POWER-DOWN SUPPLY CURRENT vs. Vcc
WATCHDOG TIMER DISABLED
85 °C
25 °C
-40 °C
0
0.25
0.5
0.75
1
1.25
1.5
1.5 2 2.5 3 3.5 4 4.5 5 5.5
Vcc (V)
Icc (uA)189
2543L–AVR–08/10
ATtiny2313
Figure 99. Power-down Supply Current vs. VCC (Watchdog Timer Enabled)
Standby Supply
Current
Figure 100. Standby Supply Current vs. VCC
POWER-DOWN SUPPLY CURRENT vs. Vcc
WATCHDOG TIMER ENABLED
85 °C
25 °C
-40 °C
0
2
4
6
8
10
12
14
16
18
20
1.5 2 2.5 3 3.5 4 4.5 5 5.5
Vcc (V)
Icc (uA)
STANDBY SUPPLY CURRENT vs. Vcc
455KHz Res
2MHz Xtal
2MHz Res
1MHz Res
0
0.01
0.02
0.03
0.04
0.05
0.06
0.07
0.08
1.5 2 2.5 3 3.5 4 4.5 5 5.5
Vcc (V)
Icc (m A)190
2543L–AVR–08/10
ATtiny2313
Pin Pull-up Figure 101. I/O Pin Pull-up Resistor Current vs. Input Voltage (VCC = 5V)
Figure 102. I/O Pin Pull-up Resistor Current vs. Input Voltage (VCC = 2.7V)
I/O PIN PULL-UP RESISTOR CURRENT vs. INPUT VOLTAGE
Vcc = 5V
85 °C 25 °C
-40 °C
0
20
40
60
80
100
120
140
160
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
VOP (V)
IOP (uA )
I/O PIN PULL-UP RESISTOR CURRENT vs. INPUT VOLTAGE
Vcc = 2.7V
85 °C 25 °C
-40 °C
0
10
20
30
40
50
60
70
80
0 0.5 1 1.5 2 2.5 3
VOP (V)
IOP (uA)191
2543L–AVR–08/10
ATtiny2313
Figure 103. Reset Pull-up Resistor Current vs. Reset Pin Voltage (VCC = 5V)
Figure 104. Reset Pull-up Resistor Current vs. Reset Pin Voltage (VCC = 2.7V)
RESET PULL-UP RESISTOR CURRENT vs. RESET PIN VOLTAGE
Vcc = 5V
85 °C
25 °C
-40 °C
0
20
40
60
80
100
120
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
VRESET (V)
IRESET (uA)
RESET PULL-UP RESISTOR CURRENT vs. RESET PIN VOLTAGE
Vcc = 2.7V
85 °C
-40 °C 25 °C
0
10
20
30
40
50
60
0 0.5 1 1.5 2 2.5 3
VRESET (V)
IRESET (uA)192
2543L–AVR–08/10
ATtiny2313
Pin Driver Strength Figure 105. I/O Pin Source Current vs. Output Voltage (VCC = 5V)
Figure 106. I/O Pin Source Current vs. Output Voltage (VCC = 2.7V)
I/O PIN SOURCE CURRENT vs. OUTPUT VOLTAGE
Vcc = 5V
85 °C
25 °C
-40 °C
0
10
20
30
40
50
60
70
80
90
3 3.2 3.4 3.6 3.8 4 4.2 4.4 4.6 4.8 5
VOH (V)
IOH (mA)
I/O PIN SOURCE CURRENT vs. OUTPUT VOLTAGE
Vcc = 2.7V
85 °C
25 °C
-40 °C
0
5
10
15
20
25
30
35
0.5 1 1.5 2 2.5 3
VOH (V)
IOH (mA)193
2543L–AVR–08/10
ATtiny2313
Figure 107. I/O Pin Source Current vs. Output Voltage (VCC = 1.8V)
Figure 108. I/O Pin Sink Current vs. Output Voltage (VCC = 5V)
I/O PIN SOURCE CURRENT vs. OUTPUT VOLTAGE
Vcc = 1.8V
85 °C
25 °C
-40 °C
0
1
2
3
4
5
6
7
8
9
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
VOH (V)
IOH (mA)
I/O PIN SINK CURRENT vs. OUTPUT VOLTAGE
Vcc = 5V
85 °C
25 °C
-40 °C
0
10
20
30
40
50
60
70
80
90
100
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
VOL (V)
IOL (mA)194
2543L–AVR–08/10
ATtiny2313
Figure 109. I/O Pin Sink Current vs. Output Voltage (VCC = 2.7V)
Figure 110. I/O Pin Sink Current vs. Output Voltage (VCC = 1.8V)
I/O PIN SINK CURRENT vs. OUTPUT VOLTAGE
Vcc = 2.7V
85 °C
25 °C
-40 °C
0
5
10
15
20
25
30
35
40
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
VOL (V)
IOL (mA)
I/O PIN SINK CURRENT vs. OUTPUT VOLTAGE
Vcc = 1.8V
85 °C
25 °C
-40 °C
0
2
4
6
8
10
12
14
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8
VOL (V)
IOL (mA)195
2543L–AVR–08/10
ATtiny2313
Figure 111. Reset I/O Pin Source Current vs. Output Voltage (VCC = 5V)
Figure 112. Reset I/O Pin Source Current vs. Output Voltage (VCC = 2.7V)
RESET I/O PIN SOURCE CURRENT vs. OUTPUT VOLTAGE
Vcc = 5V
85 °C
25 °C
-40 °C
0
2
4
6
8
10
12
14
16
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
VOH (V)
Current (mA)
RESET I/O PIN SOURCE CURRENT vs. OUTPUT VOLTAGE
Vcc = 2.7V
85 °C
25 °C
-40 °C
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
0 0.5 1 1.5 2 2.5 3
VOH (V)
Current (m A)196
2543L–AVR–08/10
ATtiny2313
Figure 113. Reset I/O Pin Source Current vs. Output Voltage (VCC = 1.8V)
Figure 114. Reset I/O Pin Sink Current vs. Output Voltage (VCC = 5V)
RESET I/O PIN SOURCE CURRENT vs. OUTPUT VOLTAGE
Vcc = 1.8V
85 °C
25 °C
-40 °C
0
0.2
0.4
0.6
0.8
1
1.2
1.4
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
VOH (V)
Current (mA)
RESET I/O PIN SINK CURRENT vs. OUTPUT VOLTAGE
Vcc = 5V
85 °C
25 °C
-40 °C
0
2
4
6
8
10
12
14
16
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
VOL (V)
Current (mA)197
2543L–AVR–08/10
ATtiny2313
Figure 115. Reset I/O Pin Sink Current vs. Output Voltage (VCC = 2.7V)
Figure 116. Reset I/O Pin Sink Current vs. Output Voltage (VCC = 1.8V)
RESET I/O PIN SINK CURRENT vs. OUTPUT VOLTAGE
Vcc = 2.7V
85 °C
25 °C
-40 °C
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
VOL (V)
Current (mA)
RESET I/O PIN SINK CURRENT vs. OUTPUT VOLTAGE
Vcc = 1.8V
85 °C
25 °C
-40 °C
0
0.2
0.4
0.6
0.8
1
1.2
1.4
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8
VOL (V)
Current (mA)198
2543L–AVR–08/10
ATtiny2313
Pin Thresholds and
Hysteresis
Figure 117. I/O Pin Input Threshold Voltage vs. VCC (VIH, I/O Pin Read as “1”)
Figure 118. I/O Pin Input Threshold Voltage vs. VCC (VIL, I/O Pin Read as “0”)
I/O PIN INPUT THRESHOLD VOLTAGE vs. Vcc
VIH, IO PIN READ AS '1'
85 °C
25 °C
-40 °C
0
0.5
1
1.5
2
2.5
3
1.5 2 2.5 3 3.5 4 4.5 5 5.5
VCC (V)
Threshold (V)
I/O PIN INPUT THRESHOLD VOLTAGE vs. Vcc
VIL, IO PIN READ AS '0'
85 °C
25 °C
-40 °C
0
0.5
1
1.5
2
2.5
3
1.5 2 2.5 3 3.5 4 4.5 5 5.5
VCC (V)
Threshold (V)199
2543L–AVR–08/10
ATtiny2313
Figure 119. Reset I/O Input Threshold Voltage vs. VCC (VIH,Reset Pin Read as “1”)
Figure 120. Reset I/O Input Threshold Voltage vs. VCC (VIL,Reset Pin Read as “0”)
RESET I/O PIN INPUT THRESHOLD VOLTAGE vs. Vcc
VIH, IO PIN READ AS '1'
85 °C
25 °C
-40 °C
0
0.5
1
1.5
2
2.5
3
1.5 2 2.5 3 3.5 4 4.5 5 5.5
Vcc (V)
Threshold (V)
RESET I/O PIN INPUT THRESHOLD VOLTAGE vs. Vcc
VIL, IO PIN READ AS '0'
85°C
25°C
-40°C
0
0.5
1
1.5
2
2.5
1.5 2 2.5 3 3.5 4 4.5 5 5.5
Vcc (V)
Threshold (V)200
2543L–AVR–08/10
ATtiny2313
Figure 121. Reset I/O Input Pin Hysteresis vs. VCC
Figure 122. Reset Input Threshold Voltage vs. VCC (VIH,Reset Pin Read as “1”)
RESET I/O INPUT PIN HYSTERESIS vs. Vcc
85 °C
25 °C
-40 °C
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
1.5 2 2.5 3 3.5 4 4.5 5 5.5
VCC (V)
Input Hysteresis (V)
RESET INPUT THRESHOLD VOLTAGE vs. Vcc
VIH, IO PIN READ AS '1'
85 °C
25 °C
-40 °C
0
0.5
1
1.5
2
2.5
1.5 2 2.5 3 3.5 4 4.5 5 5.5
VCC (V)
Threshold (V)201
2543L–AVR–08/10
ATtiny2313
Figure 123. Reset Input Threshold Voltage vs. VCC (VIL,Reset Pin Read as “0”)
Figure 124. Reset Input Pin Hysteresis vs. VCC
RESET INPUT THRESHOLD VOLTAGE vs. Vcc
VIL, IO PIN READ AS '0'
85 °C
25 °C
-40 °C
0
0.5
1
1.5
2
2.5
1.5 2 2.5 3 3.5 4 4.5 5 5.5
Vcc (V)
Threshold (V)
RESET INPUT PIN HYSTERESIS vs. Vcc
85 °C
25 °C
-40 °C
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
1.5 2 2.5 3 3.5 4 4.5 5 5.5
Vcc (V)
Input Hysteresis (V)202
2543L–AVR–08/10
ATtiny2313
BOD Thresholds and
Analog Comparator
Offset
Figure 125. BOD Thresholds vs. Temperature (BOD Level is 4.3V)
Figure 126. BOD Thresholds vs. Temperature (BOD Level is 2.7V)
BOD THRESHOLDS vs. TEMPERATURE
BODLEVEL IS 4.3V
4.25
4.3
4.35
4.4
4.45
-40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90
Temperature (C)
Thres hol d (V )
Rising Vcc
Falling Vcc
BOD THRESHOLDS vs. TEMPERATURE
BODLEVEL IS 2.7V
2.65
2.7
2.75
2.8
2.85
-40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90
Temperature (C)
Threshold (V)
Rising Vcc
Falling Vcc203
2543L–AVR–08/10
ATtiny2313
Figure 127. BOD Thresholds vs. Temperature (BOD Level is 1.8V)
Internal Oscillator
Speed
Figure 128. Watchdog Oscillator Frequency vs. VCC
BOD THRESHOLDS vs. TEMPERATURE
BODLEVEL IS 1.8V
Rising Vcc
Falling Vcc
1.78
1.8
1.82
1.84
1.86
1.88
-40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90
Temperature (C)
Threshold (V)
WATCHDOG OSCILLATOR FREQUENCY vs. VCC
85 °C
25 °C
-40 °C
0.095
0.096
0.097
0.098
0.099
0.1
0.101
0.102
0.103
0.104
1.5 2 2.5 3 3.5 4 4.5 5 5.5
VCC (V)
FRC (M Hz)204
2543L–AVR–08/10
ATtiny2313
Figure 129. Watchdog Oscillator Frequency vs. Temperature
Figure 130. Calibrated 8 MHz RC Oscillator Frequency vs. Temperature
WATCHDOG OSCILLATOR FREQUENCY vs. TEMPERATURE
5.5 V
5.0 V
4.5 V
4.0 V
3.3 V
2.7 V
1.8 V
0.096
0.097
0.098
0.099
0.1
0.101
0.102
0.103
0.104
0.105
-40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90
Temperature (°C)
FRC (MHz)
CALIBRATED 8MHz RC OSCILLATOR FREQUENCY vs. TEMPERATURE
5.5 V
5.0 V
4.5 V
4.0 V
3.3 V
2.7 V
1.8 V
7.7
7.8
7.9
8
8.1
8.2
8.3
8.4
-40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90
Temperature (°C)
FRC (MHz )205
2543L–AVR–08/10
ATtiny2313
Figure 131. Calibrated 8 MHz RC Oscillator Frequency vs. VCC
Figure 132. Calibrated 8 MHz RC Oscillator Frequency vs. Osccal Value
CALIBRATED 8MHz RC OSCILLATOR FREQUENCY vs. Vcc
85 °C
25 °C
-40 °C
7.7
7.8
7.9
8
8.1
8.2
8.3
8.4
1.5 2 2.5 3 3.5 4 4.5 5 5.5
VCC (V)
FRC (MHz)
CALIBRATED 8MHz RC OSCILLATOR FREQUENCY vs. OSCCAL VALUE
25 °C
0
2
4
6
8
10
12
14
0 16 32 48 64 80 96 112 128
OSCCAL VALUE
FRC (MHz)206
2543L–AVR–08/10
ATtiny2313
Figure 133. Calibrated 4 MHz RC Oscillator Frequency vs. Temperature
Figure 134. Calibrated 4 MHz RC Oscillator Frequency vs. VCC
CALIBRATED 4MHz RC OSCILLATOR FREQUENCY vs. TEMPERATURE
5.5 V
5.0 V
3.3 V
1.8 V
3.9
3.95
4
4.05
4.1
4.15
4.2
-40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90
Temperature (°C)
FRC (MHz)
CALIBRATED 4MHz RC OSCILLATOR FREQUENCY vs. Vcc
85 °C
25 °C
-40 °C
3.9
3.95
4
4.05
4.1
4.15
4.2
1.5 2 2.5 3 3.5 4 4.5 5 5.5
VCC (V)
FRC (MHz)207
2543L–AVR–08/10
ATtiny2313
Figure 135. Calibrated 4 MHz RC Oscillator Frequency vs. Osccal Value
Current Consumption
of Peripheral Units
Figure 136. Brownout Detector Current vs. VCC
CALIBRATED 4MHz RC OSCILLATOR FREQUENCY vs. OSCCAL VALUE
25 °C
0
1
2
3
4
5
6
7
0 8 16 24 32 40 48 56 64 72 80 88 96 104 112 120 128
OSCCAL VALUE
FRC (MHz )
BROWNOUT DETECTOR CURRENT vs. Vcc
85 °C
25 °C
-40 °C
0
5
10
15
20
25
30
1.5 2 2.5 3 3.5 4 4.5 5 5.5
Vcc (V)
Icc (uA)208
2543L–AVR–08/10
ATtiny2313
Figure 137. Analog Comparator Current vs. VCC
Figure 138. Programming Current vs. VCC
ANALOG COMPARATOR CURRENT vs. Vcc
85 °C
25 °C
-40 °C
0
10
20
30
40
50
60
70
1.5 2 2.5 3 3.5 4 4.5 5 5.5
Vcc (V)
Icc (uA)
PROGRAMMING CURRENT vs. Vcc
85 °C
25 °C
-40 °C
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
1.5 2 2.5 3 3.5 4 4.5 5 5.5
Vcc (V)
Icc (mA)209
2543L–AVR–08/10
ATtiny2313
Current Consumption
in Reset and Reset
Pulsewidth
Figure 139. Reset Supply Current vs. VCC (0.1 - 1.0 MHz, Excluding Current Through The
Reset Pull-up)
Figure 140. Reset Supply Current vs. VCC (1 - 20 MHz, Excluding Current Through The Reset
Pull-up)
RESET SUPPLY CURRENT vs. Vcc
0.1 - 1.0 MHz, EXCLUDING CURRENT THROUGH THE RESET PULLUP
5.5 V
5.0 V
4.5 V
4.0 V
3.3 V
2.7 V
1.8 V
0
0.02
0.04
0.06
0.08
0.1
0.12
0.14
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1
Frequency (MHz)
Icc (mA)
RESET SUPPLY CURRENT vs. Vcc
1 - 20 MHz, EXCLUDING CURRENT THROUGH THE RESET PULLUP
5.5 V
5.0 V
4.5 V
4.0 V
3.3 V
2.7 V
0
0.5
1
1.5
2
2.5
0 2 4 6 8 10 12 14 16 18 20
Frequency (MHz)
Icc (mA)210
2543L–AVR–08/10
ATtiny2313
Figure 141. Minimum Reset Pulse Width vs. VCC
MINIMUM RESET PULSE WIDTH vs. Vcc
85 °C
25 °C
-40 °C
0
500
1000
1500
2000
2500
1.5 2 2.5 3 3.5 4 4.5 5 5.5
Vcc (V)
Pulsewidth (ns)211
2543L–AVR–08/10
ATtiny2313
Register Summary
Address Name Bit 7 Bit 6 Bit 5 Bit 4 Bit 3 Bit 2 Bit 1 Bit 0 Page
0x3F (0x5F) SREG I T H S V N Z C 8
0x3E (0x5E) Reserved – – – – – – – –
0x3D (0x5D) SPL SP7 SP6 SP5 SP4 SP3 SP2 SP1 SP0 11
0x3C (0x5C) OCR0B Timer/Counter0 – Compare Register B 77
0x3B (0x5B) GIMSK INT1 INT0 PCIE – – – – – 60
0x3A (0x5A) EIFR INTF1 INTF0 PCIF – – – – – 61
0x39 (0x59) TIMSK TOIE1 OCIE1A OCIE1B – ICIE1 OCIE0B TOIE0 OCIE0A 78, 109
0x38 (0x58) TIFR TOV1 OCF1A OCF1B – ICF1 OCF0B TOV0 OCF0A 78
0x37 (0x57) SPMCSR – – – CTPB RFLB PGWRT PGERS SELFPRGEN 155
0x36 (0x56) OCR0A Timer/Counter0 – Compare Register A 77
0x35 (0x55) MCUCR PUD SM1 SE SM0 ISC11 ISC10 ISC01 ISC00 53
0x34 (0x54) MCUSR – – – – WDRF BORF EXTRF PORF 37
0x33 (0x53) TCCR0B FOC0A FOC0B – – WGM02 CS02 CS01 CS00 76
0x32 (0x52) TCNT0 Timer/Counter0 (8-bit) 77
0x31 (0x51) OSCCAL – CAL6 CAL5 CAL4 CAL3 CAL2 CAL1 CAL0 26
0x30 (0x50) TCCR0A COM0A1 COM0A0 COM0B1 COM0B0 – – WGM01 WGM00 73
0x2F (0x4F) TCCR1A COM1A1 COM1A0 COM1B1 COM1BO – – WGM11 WGM10 104
0x2E (0x4E) TCCR1B ICNC1 ICES1 – WGM13 WGM12 CS12 CS11 CS10 107
0x2D (0x4D) TCNT1H Timer/Counter1 – Counter Register High Byte 108
0x2C (0x4C) TCNT1L Timer/Counter1 – Counter Register Low Byte 108
0x2B (0x4B) OCR1AH Timer/Counter1 – Compare Register A High Byte 108
0x2A (0x4A) OCR1AL Timer/Counter1 – Compare Register A Low Byte 108
0x29 (0x49) OCR1BH Timer/Counter1 – Compare Register B High Byte 109
0x28 (0x48) OCR1BL Timer/Counter1 – Compare Register B Low Byte 109
0x27 (0x47) Reserved – – – – – – – –
0x26 (0x46) CLKPR CLKPCE – – – CLKPS3 CLKPS2 CLKPS1 CLKPS0 28
0x25 (0x45) ICR1H Timer/Counter1 - Input Capture Register High Byte 109
0x24 (0x44) ICR1L Timer/Counter1 - Input Capture Register Low Byte 109
0x23 (0x43) GTCCR – – – – – – – PSR10 81
0x22 (ox42) TCCR1C FOC1A FOC1B – – – – – – 108
0x21 (0x41) WDTCSR WDIF WDIE WDP3 WDCE WDE WDP2 WDP1 WDP0 42
0x20 (0x40) PCMSK PCINT7 PCINT6 PCINT5 PCINT4 PCINT3 PCINT2 PCINT1 PCINT0 61
0x1F (0x3F) Reserved – – – – – – – –
0x1E (0x3E) EEAR – EEPROM Address Register 16
0x1D (0x3D) EEDR EEPROM Data Register 17
0x1C (0x3C) EECR – – EEPM1 EEPM0 EERIE EEMPE EEPE EERE 17
0x1B (0x3B) PORTA – – – – – PORTA2 PORTA1 PORTA0 58
0x1A (0x3A) DDRA – – – – – DDA2 DDA1 DDA0 58
0x19 (0x39) PINA – – – – – PINA2 PINA1 PINA0 58
0x18 (0x38) PORTB PORTB7 PORTB6 PORTB5 PORTB4 PORTB3 PORTB2 PORTB1 PORTB0 58
0x17 (0x37) DDRB DDB7 DDB6 DDB5 DDB4 DDB3 DDB2 DDB1 DDB0 58
0x16 (0x36) PINB PINB7 PINB6 PINB5 PINB4 PINB3 PINB2 PINB1 PINB0 58
0x15 (0x35) GPIOR2 General Purpose I/O Register 2 21
0x14 (0x34) GPIOR1 General Purpose I/O Register 1 21
0x13 (0x33) GPIOR0 General Purpose I/O Register 0 21
0x12 (0x32) PORTD – PORTD6 PORTD5 PORTD4 PORTD3 PORTD2 PORTD1 PORTD0 58
0x11 (0x31) DDRD – DDD6 DDD5 DDD4 DDD3 DDD2 DDD1 DDD0 58
0x10 (0x30) PIND – PIND6 PIND5 PIND4 PIND3 PIND2 PIND1 PIND0 58
0x0F (0x2F) USIDR USI Data Register 144
0x0E (0x2E) USISR USISIF USIOIF USIPF USIDC USICNT3 USICNT2 USICNT1 USICNT0 145
0x0D (0x2D) USICR USISIE USIOIE USIWM1 USIWM0 USICS1 USICS0 USICLK USITC 145
0x0C (0x2C) UDR UART Data Register (8-bit) 129
0x0B (0x2B) UCSRA RXC TXC UDRE FE DOR UPE U2X MPCM 129
0x0A (0x2A) UCSRB RXCIE TXCIE UDRIE RXEN TXEN UCSZ2 RXB8 TXB8 131
0x09 (0x29) UBRRL UBRRH[7:0] 133
0x08 (0x28) ACSR ACD ACBG ACO ACI ACIE ACIC ACIS1 ACIS0 149
0x07 (0x27) Reserved – – – – – – – –
0x06 (0x26) Reserved – – – – – – – –
0x05 (0x25) Reserved – – – – – – – –
0x04 (0x24) Reserved – – – – – – – –
0x03 (0x23) UCSRC – UMSEL UPM1 UPM0 USBS UCSZ1 UCSZ0 UCPOL 132
0x02 (0x22) UBRRH – – – – UBRRH[11:8] 133
0x01 (0x21) DIDR – – – – – – AIN1D AIN0D 150
0x00 (0x20) Reserved – – – – – – – –212
2543L–AVR–08/10
ATtiny2313
Note: 1. For compatibility with future devices, reserved bits should be written to zero if accessed. Reserved I/O memory addresses
should never be written.
2. I/O Registers within the address range 0x00 - 0x1F are directly bit-accessible using the SBI and CBI instructions. In these
registers, the value of single bits can be checked by using the SBIS and SBIC instructions.
3. Some of the status flags are cleared by writing a logical one to them. Note that, unlike most other AVRs, the CBI and SBI
instructions will only operate on the specified bit, and can therefore be used on registers containing such status flags. The
CBI and SBI instructions work with registers 0x00 to 0x1F only.
4. When using the I/O specific commands IN and OUT, the I/O addresses 0x00 - 0x3F must be used. When addressing I/O
Registers as data space using LD and ST instructions, 0x20 must be added to these addresses. 213
2543L–AVR–08/10
ATtiny2313
Instruction Set Summary
Mnemonics Operands Description Operation Flags #Clocks
ARITHMETIC AND LOGIC INSTRUCTIONS
ADD Rd, Rr Add two Registers Rd ← Rd + Rr Z,C,N,V,H 1
ADC Rd, Rr Add with Carry two Registers Rd ← Rd + Rr + C Z,C,N,V,H 1
ADIW Rdl,K Add Immediate to Word Rdh:Rdl ← Rdh:Rdl + K Z,C,N,V,S 2
SUB Rd, Rr Subtract two Registers Rd ← Rd - Rr Z,C,N,V,H 1
SUBI Rd, K Subtract Constant from Register Rd ← Rd - K Z,C,N,V,H 1
SBC Rd, Rr Subtract with Carry two Registers Rd ← Rd - Rr - C Z,C,N,V,H 1
SBCI Rd, K Subtract with Carry Constant from Reg. Rd ← Rd - K - C Z,C,N,V,H 1
SBIW Rdl,K Subtract Immediate from Word Rdh:Rdl ← Rdh:Rdl - K Z,C,N,V,S 2
AND Rd, Rr Logical AND Registers Rd ← Rd • Rr Z,N,V 1
ANDI Rd, K Logical AND Register and Constant Rd ← Rd • K Z,N,V 1
OR Rd, Rr Logical OR Registers Rd ← Rd v Rr Z,N,V 1
ORI Rd, K Logical OR Register and Constant Rd ← Rd v K Z,N,V 1
EOR Rd, Rr Exclusive OR Registers Rd ← Rd ⊕ Rr Z,N,V 1
COM Rd One’s Complement Rd ← 0xFF − Rd Z,C,N,V 1
NEG Rd Two’s Complement Rd ← 0x00 − Rd Z,C,N,V,H 1
SBR Rd,K Set Bit(s) in Register Rd ← Rd v K Z,N,V 1
CBR Rd,K Clear Bit(s) in Register Rd ← Rd • (0xFF - K) Z,N,V 1
INC Rd Increment Rd ← Rd + 1 Z,N,V 1
DEC Rd Decrement Rd ← Rd − 1 Z,N,V 1
TST Rd Test for Zero or Minus Rd ← Rd • Rd Z,N,V 1
CLR Rd Clear Register Rd ← Rd ⊕ Rd Z,N,V 1
SER Rd Set Register Rd ← 0xFF None 1
BRANCH INSTRUCTIONS
RJMP k Relative Jump PC ← PC + k + 1 None 2
IJMP Indirect Jump to (Z) PC ← Z None 2
RCALL k Relative Subroutine Call PC ← PC + k + 1 None 3
ICALL Indirect Call to (Z) PC ← Z None 3
RET Subroutine Return PC ← STACK None 4
RETI Interrupt Return PC ← STACK I 4
CPSE Rd,Rr Compare, Skip if Equal if (Rd = Rr) PC ← PC + 2 or 3 None 1/2/3
CP Rd,Rr Compare Rd − Rr Z, N,V,C,H 1
CPC Rd,Rr Compare with Carry Rd − Rr − C Z, N,V,C,H 1
CPI Rd,K Compare Register with Immediate Rd − K Z, N,V,C,H 1
SBRC Rr, b Skip if Bit in Register Cleared if (Rr(b)=0) PC ← PC + 2 or 3 None 1/2/3
SBRS Rr, b Skip if Bit in Register is Set if (Rr(b)=1) PC ← PC + 2 or 3 None 1/2/3
SBIC P, b Skip if Bit in I/O Register Cleared if (P(b)=0) PC ← PC + 2 or 3 None 1/2/3
SBIS P, b Skip if Bit in I/O Register is Set if (P(b)=1) PC ← PC + 2 or 3 None 1/2/3
BRBS s, k Branch if Status Flag Set if (SREG(s) = 1) then PC←PC+k + 1 None 1/2
BRBC s, k Branch if Status Flag Cleared if (SREG(s) = 0) then PC←PC+k + 1 None 1/2
BREQ k Branch if Equal if (Z = 1) then PC ← PC + k + 1 None 1/2
BRNE k Branch if Not Equal if (Z = 0) then PC ← PC + k + 1 None 1/2
BRCS k Branch if Carry Set if (C = 1) then PC ← PC + k + 1 None 1/2
BRCC k Branch if Carry Cleared if (C = 0) then PC ← PC + k + 1 None 1/2
BRSH k Branch if Same or Higher if (C = 0) then PC ← PC + k + 1 None 1/2
BRLO k Branch if Lower if (C = 1) then PC ← PC + k + 1 None 1/2
BRMI k Branch if Minus if (N = 1) then PC ← PC + k + 1 None 1/2
BRPL k Branch if Plus if (N = 0) then PC ← PC + k + 1 None 1/2
BRGE k Branch if Greater or Equal, Signed if (N ⊕ V= 0) then PC ← PC + k + 1 None 1/2
BRLT k Branch if Less Than Zero, Signed if (N ⊕ V= 1) then PC ← PC + k + 1 None 1/2
BRHS k Branch if Half Carry Flag Set if (H = 1) then PC ← PC + k + 1 None 1/2
BRHC k Branch if Half Carry Flag Cleared if (H = 0) then PC ← PC + k + 1 None 1/2
BRTS k Branch if T Flag Set if (T = 1) then PC ← PC + k + 1 None 1/2
BRTC k Branch if T Flag Cleared if (T = 0) then PC ← PC + k + 1 None 1/2
BRVS k Branch if Overflow Flag is Set if (V = 1) then PC ← PC + k + 1 None 1/2
BRVC k Branch if Overflow Flag is Cleared if (V = 0) then PC ← PC + k + 1 None 1/2
BRIE k Branch if Interrupt Enabled if ( I = 1) then PC ← PC + k + 1 None 1/2
BRID k Branch if Interrupt Disabled if ( I = 0) then PC ← PC + k + 1 None 1/2
BIT AND BIT-TEST INSTRUCTIONS
SBI P,b Set Bit in I/O Register I/O(P,b) ← 1 None 2
CBI P,b Clear Bit in I/O Register I/O(P,b) ← 0 None 2
LSL Rd Logical Shift Left Rd(n+1) ← Rd(n), Rd(0) ← 0 Z,C,N,V 1
LSR Rd Logical Shift Right Rd(n) ← Rd(n+1), Rd(7) ← 0 Z,C,N,V 1
ROL Rd Rotate Left Through Carry Rd(0)←C,Rd(n+1)← Rd(n),C←Rd(7) Z,C,N,V 1214
2543L–AVR–08/10
ATtiny2313
ROR Rd Rotate Right Through Carry Rd(7)←C,Rd(n)← Rd(n+1),C←Rd(0) Z,C,N,V 1
ASR Rd Arithmetic Shift Right Rd(n) ← Rd(n+1), n=0..6 Z,C,N,V 1
SWAP Rd Swap Nibbles Rd(3..0)←Rd(7..4),Rd(7..4)←Rd(3..0) None 1
BSET s Flag Set SREG(s) ← 1 SREG(s) 1
BCLR s Flag Clear SREG(s) ← 0 SREG(s) 1
BST Rr, b Bit Store from Register to T T ← Rr(b) T 1
BLD Rd, b Bit load from T to Register Rd(b) ← T None 1
SEC Set Carry C ← 1 C1
CLC Clear Carry C ← 0 C 1
SEN Set Negative Flag N ← 1 N1
CLN Clear Negative Flag N ← 0 N 1
SEZ Set Zero Flag Z ← 1 Z1
CLZ Clear Zero Flag Z ← 0 Z 1
SEI Global Interrupt Enable I ← 1 I1
CLI Global Interrupt Disable I ← 0 I 1
SES Set Signed Test Flag S ← 1 S1
CLS Clear Signed Test Flag S ← 0 S 1
SEV Set Twos Complement Overflow. V ← 1 V1
CLV Clear Twos Complement Overflow V ← 0 V 1
SET Set T in SREG T ← 1 T1
CLT Clear T in SREG T ← 0 T 1
SEH Set Half Carry Flag in SREG H ← 1 H1
CLH Clear Half Carry Flag in SREG H ← 0 H 1
DATA TRANSFER INSTRUCTIONS
MOV Rd, Rr Move Between Registers Rd ← Rr None 1
MOVW Rd, Rr Copy Register Word Rd+1:Rd ← Rr+1:Rr None 1
LDI Rd, K Load Immediate Rd ← K None 1
LD Rd, X Load Indirect Rd ← (X) None 2
LD Rd, X+ Load Indirect and Post-Inc. Rd ← (X), X ← X + 1 None 2
LD Rd, - X Load Indirect and Pre-Dec. X ← X - 1, Rd ← (X) None 2
LD Rd, Y Load Indirect Rd ← (Y) None 2
LD Rd, Y+ Load Indirect and Post-Inc. Rd ← (Y), Y ← Y + 1 None 2
LD Rd, - Y Load Indirect and Pre-Dec. Y ← Y - 1, Rd ← (Y) None 2
LDD Rd,Y+q Load Indirect with Displacement Rd ← (Y + q) None 2
LD Rd, Z Load Indirect Rd ← (Z) None 2
LD Rd, Z+ Load Indirect and Post-Inc. Rd ← (Z), Z ← Z+1 None 2
LD Rd, -Z Load Indirect and Pre-Dec. Z ← Z - 1, Rd ← (Z) None 2
LDD Rd, Z+q Load Indirect with Displacement Rd ← (Z + q) None 2
LDS Rd, k Load Direct from SRAM Rd ← (k) None 2
ST X, Rr Store Indirect (X) ← Rr None 2
ST X+, Rr Store Indirect and Post-Inc. (X) ← Rr, X ← X + 1 None 2
ST - X, Rr Store Indirect and Pre-Dec. X ← X - 1, (X) ← Rr None 2
ST Y, Rr Store Indirect (Y) ← Rr None 2
ST Y+, Rr Store Indirect and Post-Inc. (Y) ← Rr, Y ← Y + 1 None 2
ST - Y, Rr Store Indirect and Pre-Dec. Y ← Y - 1, (Y) ← Rr None 2
STD Y+q,Rr Store Indirect with Displacement (Y + q) ← Rr None 2
ST Z, Rr Store Indirect (Z) ← Rr None 2
ST Z+, Rr Store Indirect and Post-Inc. (Z) ← Rr, Z ← Z + 1 None 2
ST -Z, Rr Store Indirect and Pre-Dec. Z ← Z - 1, (Z) ← Rr None 2
STD Z+q,Rr Store Indirect with Displacement (Z + q) ← Rr None 2
STS k, Rr Store Direct to SRAM (k) ← Rr None 2
LPM Load Program Memory R0 ← (Z) None 3
LPM Rd, Z Load Program Memory Rd ← (Z) None 3
LPM Rd, Z+ Load Program Memory and Post-Inc Rd ← (Z), Z ← Z+1 None 3
SPM Store Program Memory (Z) ← R1:R0 None -
IN Rd, P In Port Rd ← P None 1
OUT P, Rr Out Port P ← Rr None 1
PUSH Rr Push Register on Stack STACK ← Rr None 2
POP Rd Pop Register from Stack Rd ← STACK None 2
MCU CONTROL INSTRUCTIONS
NOP No Operation None 1
SLEEP Sleep (see specific descr. for Sleep function) None 1
WDR Watchdog Reset (see specific descr. for WDR/timer) None 1
BREAK Break For On-chip Debug Only None N/A
Mnemonics Operands Description Operation Flags #Clocks215
2543L–AVR–08/10
ATtiny2313
Ordering Information
Notes: 1. These devices can also be supplied in wafer form. Please contact your local Atmel sales office for detailed ordering information
and minimum quantities.
2. Pb-free packaging alternative, complies to the European Directive for Restriction of Hazardous Substances (RoHS directive).
Also Halide free and fully Green.
3. For Speed vs. VCC, see Figure 82 on page 180 and Figure 83 on page 180.
4. Code Indicators:
– U: matte tin
– R: tape & reel
Speed (MHz)(3) Power Supply (V) Ordering Code(4) Package(2) Operation Range
10 1.8 - 5.5
ATtiny2313V-10PU
ATtiny2313V-10SU
ATtiny2313V-10SUR
ATtiny2313V-10MU
ATtiny2313V-10MUR
20P3
20S
20S
20M1
20M1
Industrial
(-40°C to +85°C)(1)
20 2.7 - 5.5
ATtiny2313-20PU
ATtiny2313-20SU
ATtiny2313-20SUR
ATtiny2313-20MU
ATtiny2313-20MUR
20P3
20S
20S
20M1
20M1
Industrial
(-40°C to +85°C)(1)
Package Type
20P3 20-lead, 0.300" Wide, Plastic Dual Inline Package (PDIP)
20S 20-lead, 0.300" Wide, Plastic Gull Wing Small Outline Package (SOIC)
20M1 20-pad, 4 x 4 x 0.8 mm Body, Quad Flat No-Lead/Micro Lead Frame Package (MLF)216
2543L–AVR–08/10
ATtiny2313
Packaging Information
20P3
2325 Orchard Parkway
San Jose, CA 95131
TITLE DRAWING NO.
R
REV.
20P3, 20-lead (0.300"/7.62 mm Wide) Plastic Dual
Inline Package (PDIP) 20P3 C
1/12/04
PIN
1
E1
A1
B
E
B1
C
L
SEATING PLANE
A
D
e
eB
eC
COMMON DIMENSIONS
(Unit of Measure = mm)
SYMBOL MIN NOM MAX NOTE
A – – 5.334
A1 0.381 – –
D 25.493 – 25.984 Note 2
E 7.620 – 8.255
E1 6.096 – 7.112 Note 2
B 0.356 – 0.559
B1 1.270 – 1.551
L 2.921 – 3.810
C 0.203 – 0.356
eB – – 10.922
eC 0.000 – 1.524
e 2.540 TYP
Notes: 1. This package conforms to JEDEC reference MS-001, Variation AD.
2. Dimensions D and E1 do not include mold Flash or Protrusion.
Mold Flash or Protrusion shall not exceed 0.25 mm (0.010"). 217
2543L–AVR–08/10
ATtiny2313
20S218
2543L–AVR–08/10
ATtiny2313
20M1
2325 Orchard Parkway
San Jose, CA 95131
TITLE DRAWING NO.
R
REV.
20M1, 20-pad, 4 x 4 x 0.8 mm Body, Lead Pitch 0.50 mm, 20M1 A
10/27/04
2.6 mm Exposed Pad, Micro Lead Frame Package (MLF)
A 0.70 0.75 0.80
A1 – 0.01 0.05
A2 0.20 REF
b 0.18 0.23 0.30
D 4.00 BSC
D2 2.45 2.60 2.75
E 4.00 BSC
E2 2.45 2.60 2.75
e 0.50 BSC
L 0.35 0.40 0.55
SIDE VIEW
Pin 1 ID
Pin #1
Notch
(0.20 R)
BOTTOM VIEW
TOP VIEW
Note: Reference JEDEC Standard MO-220, Fig. 1 (SAW Singulation) WGGD-5.
COMMON DIMENSIONS
(Unit of Measure = mm)
SYMBOL MIN NOM MAX NOTE
D
E
e
A2
A1
A
D2
E2
0.08 C
L
1
2
3
b
1
2
3219
2543L–AVR–08/10
ATtiny2313
Errata The revision in this section refers to the revision of the ATtiny2313 device.
ATtiny2313 Rev C No known errata
ATtiny2313 Rev B • Wrong values read after Erase Only operation
• Parallel Programming does not work
• Watchdog Timer Interrupt disabled
• EEPROM can not be written below 1.9 volts
1. Wrong values read after Erase Only operation
At supply voltages below 2.7 V, an EEPROM location that is erased by the Erase Only operation
may read as programmed (0x00).
Problem Fix/Workaround
If it is necessary to read an EEPROM location after Erase Only, use an Atomic Write operation
with 0xFF as data in order to erase a location. In any case, the Write Only operation can
be used as intended. Thus no special considerations are needed as long as the erased location
is not read before it is programmed.
2. Parallel Programming does not work
Parallel Programming is not functioning correctly. Because of this, reprogramming of the
device is impossible if one of the following modes are selected:
– In-System Programming disabled (SPIEN unprogrammed)
– Reset Disabled (RSTDISBL programmed)
Problem Fix/Workaround
Serial Programming is still working correctly. By avoiding the two modes above, the device
can be reprogrammed serially.
3. Watchdog Timer Interrupt disabled
If the watchdog timer interrupt flag is not cleared before a new timeout occurs, the watchdog
will be disabled, and the interrupt flag will automatically be cleared. This is only applicable in
interrupt only mode. If the Watchdog is configured to reset the device in the watchdog timeout
following an interrupt, the device works correctly.
Problem fix / Workaround
Make sure there is enough time to always service the first timeout event before a new
watchdog timeout occurs. This is done by selecting a long enough time-out period.
4. EEPROM can not be written below 1.9 volts
Writing the EEPROM at VCC below 1.9 volts might fail.
Problem fix / Workaround
Do not write the EEPROM when VCC is below 1.9 volts.
ATtiny2313 Rev A Revision A has not been sampled.220
2543L–AVR–08/10
ATtiny2313
Datasheet
Revision
History
Please note that the referring page numbers in this section refer to the complete document.
Rev. 2543L - 8/10 Added tape and reel part numbers in “Ordering Information” on page 215. Removed text
“Not recommended for new design” from cover page. Fixed literature number mismatch
in Datasheet Revision History.
Rev. 2543K - 03/10
Rev. 2543J - 11/09
Changes from Rev.
2543H-02/05 to
Rev. 2543I-04/06
Changes from Rev.
2543G-10/04 to
Rev. 2543H-02/05
1. Added device Rev C “No known errata” in “Errata” on page 219.
1. Updated template
2. Changed device status to “Not recommended for new designs.”
3. Updated “Stack Pointer” on page 11.
4. Updated Table “Sleep Mode Select” on page 30.
5. Updated “Calibration Byte” on page 160 (to one byte of calibration data)
1. Updated typos.
2. Updated Figure 1 on page 2.
3 Added “Resources” on page 6.
4. Updated “Default Clock Source” on page 23.
5. Updated “128 kHz Internal Oscillator” on page 28.
6. Updated “Power Management and Sleep Modes” on page 30
7. Updated Table 3 on page 23,Table 13 on page 30, Table 14 on page 31,
Table 19 on page 42, Table 31 on page 60, Table 79 on page 176.
8. Updated “External Interrupts” on page 59.
9. Updated “Bit 7..0 – PCINT7..0: Pin Change Enable Mask 7..0” on page
61.
10. Updated “Bit 6 – ACBG: Analog Comparator Bandgap Select” on page
149.
11. Updated “Calibration Byte” on page 160.
12. Updated “DC Characteristics” on page 177.
13. Updated “Register Summary” on page 211.
14. Updated “Ordering Information” on page 215.
15. Changed occurences of OCnA to OCFnA, OCnB to OCFnB and OC1x to
OCF1x.
1. Updated Table 6 on page 25, Table 15 on page 34, Table 68 on page 160
and Table 80 on page 179.
2. Changed CKSEL default value in “Default Clock Source” on page 23 to
8 MHz.221
2543L–AVR–08/10
ATtiny2313
Changes from Rev.
2543F-08/04 to
Rev. 2543G-10/04
Changes from Rev.
2543E-04/04 to
Rev. 2543F-08/04
Changes from Rev.
2543D-03/04 to
Rev. 2543E-04/04
Changes from Rev.
2543C-12/03 to
Rev. 2543D-03/04
3. Updated “Programming the Flash” on page 165, “Programming the
EEPROM” on page 167 and “Enter Programming Mode” on page 163.
4. Updated “DC Characteristics” on page 177.
5. MLF option updated to “Quad Flat No-Lead/Micro Lead Frame
(QFN/MLF)”
1. Updated “Features” on page 1.
2. Updated “Pinout ATtiny2313” on page 2.
3. Updated “Ordering Information” on page 215.
4. Updated “Packaging Information” on page 216.
5. Updated “Errata” on page 219.
1. Updated “Features” on page 1.
2. Updated “Alternate Functions of Port B” on page 53.
3. Updated “Calibration Byte” on page 160.
4. Moved Table 69 on page 160 and Table 70 on page 160 to “Page Size”
on page 160.
5. Updated “Enter Programming Mode” on page 163.
6. Updated “Serial Programming Algorithm” on page 173.
7. Updated Table 78 on page 174.
8. Updated “DC Characteristics” on page 177.
9. Updated “ATtiny2313 Typical Characteristics” on page 181.
10. Changed occurences of PCINT15 to PCINT7, EEMWE to EEMPE and
EEWE to EEPE in the document.
1. Speed Grades changed
- 12MHz to 10MHz
- 24MHz to 20MHz
2. Updated Figure 1 on page 2.
3. Updated “Ordering Information” on page 215.
4. Updated “Maximum Speed vs. VCC” on page 180.
5. Updated “ATtiny2313 Typical Characteristics” on page 181.
1. Updated Table 2 on page 23.
2. Replaced “Watchdog Timer” on page 39.
3. Added “Maximum Speed vs. VCC” on page 180.
4. “Serial Programming Algorithm” on page 173 updated.
5. Changed mA to µA in preliminary Figure 136 on page 207.
6. “Ordering Information” on page 215 updated.
MLF package option removed222
2543L–AVR–08/10
ATtiny2313
Changes from Rev.
2543B-09/03 to
Rev. 2543C-12/03
Changes from Rev.
2543A-09/03 to
Rev. 2543B-09/03
7. Package drawing “20P3” on page 216 updated.
8. Updated C-code examples.
9. Renamed instances of SPMEN to SELFPRGEN, Self Programming
Enable.
1. Updated “Calibrated Internal RC Oscillator” on page 25.
1. Fixed typo from UART to USART and updated Speed Grades and Power
Consumption Estimates in “Features” on page 1.
2. Updated “Pin Configurations” on page 2.
3. Updated Table 15 on page 34 and Table 80 on page 179.
4. Updated item 5 in “Serial Programming Algorithm” on page 173.
5. Updated “Electrical Characteristics” on page 177.
6. Updated Figure 82 on page 180 and added Figure 83 on page 180.
7. Changed SFIOR to GTCCR in “Register Summary” on page 211.
8. Updated “Ordering Information” on page 215.
9. Added new errata in “Errata” on page 219.i
2543L–AVR–08/10
ATtiny2313
Table of Contents
Features 1
Pin Configurations 2
General Information 6
Resources 6
Code Examples 6
Disclaimer 6
AVR CPU Core 7
Introduction 7
Architectural Overview 7
ALU – Arithmetic Logic Unit 8
Status Register 8
General Purpose Register File 9
Instruction Execution Timing 11
Reset and Interrupt Handling 12
AVR ATtiny2313 Memories 14
In-System Reprogrammable Flash Program Memory 14
EEPROM Data Memory 16
I/O Memory 20
System Clock and Clock Options 22
Clock Systems and their Distribution 22
Clock Sources 23
Default Clock Source 23
Crystal Oscillator 23
Calibrated Internal RC Oscillator 25
System Clock Prescalar 28
Power Management and Sleep Modes 30
Idle Mode 30
Power-down Mode 31
Standby Mode 31
Minimizing Power Consumption 31
System Control and Reset 33
Interrupts 44
Interrupt Vectors in ATtiny2313 44
I/O-Ports 46
Introduction 46ii
2543L–AVR–08/10
ATtiny2313
Ports as General Digital I/O 47
Alternate Port Functions 51
External Interrupts 59
Pin Change Interrupt Timing 59
8-bit Timer/Counter0 with PWM 62
Overview 62
Timer/Counter Clock Sources 63
Counter Unit 63
Output Compare Unit 64
Compare Match Output Unit 65
Modes of Operation 66
Timer/Counter Timing Diagrams 71
Timer/Counter0 and Timer/Counter1 Prescalers 80
16-bit Timer/Counter1 82
Overview 82
Accessing 16-bit Registers 84
Counter Unit 88
Input Capture Unit 89
Output Compare Units 90
Modes of Operation 94
USART 111
Overview 111
Clock Generation 112
Frame Formats 115
USART Initialization 116
Asynchronous Data Reception 124
Universal Serial Interface – USI 138
Overview 138
Functional Descriptions 139
Alternative USI Usage 144
USI Register Descriptions 144
Analog Comparator 149
debugWIRE On-chip Debug System 151
Features 151
Overview 151
Physical Interface 151
Software Break Points 152
Limitations of debugWIRE 152iii
2543L–AVR–08/10
ATtiny2313
debugWIRE Related Register in I/O Memory 152
Self-Programming the Flash 153
Memory Programming 158
Program And Data Memory Lock Bits 158
Signature Bytes 160
Calibration Byte 160
Page Size 160
Parallel Programming Parameters, Pin Mapping, and Commands 161
Serial Programming Pin Mapping 163
Parallel Programming 163
Serial Downloading 172
External Clock Drive 179
ATtiny2313 Typical Characteristics 181
Errata 219
ATtiny2313 Rev C 219
ATtiny2313 Rev B 219
ATtiny2313 Rev A 219
Datasheet Revision History 220
Rev. 2543L - 8/10 220
Rev. 2543K - 03/10 220
Rev. 2543J - 11/09 220
Changes from Rev. 2543H-02/05 to Rev. 2543I-04/06 220
Changes from Rev. 2543G-10/04 to Rev. 2543H-02/05 220
Changes from Rev. 2543F-08/04 to Rev. 2543G-10/04 221
Changes from Rev. 2543E-04/04 to Rev. 2543F-08/04 221
Changes from Rev. 2543D-03/04 to Rev. 2543E-04/04 221
Changes from Rev. 2543C-12/03 to Rev. 2543D-03/04 221
Changes from Rev. 2543B-09/03 to Rev. 2543C-12/03 222
Changes from Rev. 2543A-09/03 to Rev. 2543B-09/03 2222543L–AVR–08/10
Headquarters International
Atmel Corporation
2325 Orchard Parkway
San Jose, CA 95131
USA
Tel: 1(408) 441-0311
Fax: 1(408) 487-2600
Atmel Asia
Unit 1-5 & 16, 19/F
BEA Tower, Millennium City 5
418 Kwun Tong Road
Kwun Tong, Kowloon
Hong Kong
Tel: (852) 2245-6100
Fax: (852) 2722-1369
Atmel Europe
Le Krebs
8, Rue Jean-Pierre Timbaud
BP 309
78054 Saint-Quentin-enYvelines
Cedex
France
Tel: (33) 1-30-60-70-00
Fax: (33) 1-30-60-71-11
Atmel Japan
9F, Tonetsu Shinkawa Bldg.
1-24-8 Shinkawa
Chuo-ku, Tokyo 104-0033
Japan
Tel: (81) 3-3523-3551
Fax: (81) 3-3523-7581
Product Contact
Web Site
www.atmel.com
Technical Support
avr@atmel.com
Sales Contact
www.atmel.com/contacts
Literature Requests
www.atmel.com/literature
Disclaimer: The information in this document is provided in connection with Atmel products. No license, express or implied, by estoppel or otherwise, to any
intellectual property right is granted by this document or in connection with the sale of Atmel products. EXCEPT AS SET FORTH IN ATMEL’S TERMS AND CONDITIONS
OF SALE LOCATED ON ATMEL’S WEB SITE, ATMEL ASSUMES NO LIABILITY WHATSOEVER AND DISCLAIMS ANY EXPRESS, IMPLIED OR STATUTORY
WARRANTY RELATING TO ITS PRODUCTS INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTY OF MERCHANTABILITY, FITNESS FOR A PARTICULAR
PURPOSE, OR NON-INFRINGEMENT. IN NO EVENT SHALL ATMEL BE LIABLE FOR ANY DIRECT, INDIRECT, CONSEQUENTIAL, PUNITIVE, SPECIAL OR INCIDENTAL
DAMAGES (INCLUDING, WITHOUT LIMITATION, DAMAGES FOR LOSS OF PROFITS, BUSINESS INTERRUPTION, OR LOSS OF INFORMATION) ARISING OUT
OF THE USE OR INABILITY TO USE THIS DOCUMENT, EVEN IF ATMEL HAS BEEN ADVISED OF THE POSSIBILITY OF SUCH DAMAGES. Atmel makes no
representations or warranties with respect to the accuracy or completeness of the contents of this document and reserves the right to make changes to specifications
and product descriptions at any time without notice. Atmel does not make any commitment to update the information contained herein. Unless specifically provided
otherwise, Atmel products are not suitable for, and shall not be used in, automotive applications. Atmel’s products are not intended, authorized, or warranted for use
as components in applications intended to support or sustain life.
© 2010 Atmel Corporation. All rights reserved. Atmel®, Atmel logo and combinations thereof, AVR® and others are registered trademarks or
trademarks of Atmel Corporation or its subsidiaries. Other terms and product names may be trademarks of others.
AVR172: Sensorless Commutation of Brushless
DC Motor (BLDC) using ATmega32M1 and
ATAVRMC320
Features
• Robust sensorless commutation control
• Ramp-up sequence
References
[1] ATmega32M1 Data sheet
[2] AVR194: Brushless DC Motor Control using ATmega32M1
[3] AVR430: MC300 Hardware User Guide
[4] AVR470: MC310 User Guide
[5] AVR471: MC320 Getting Started Guide
[6] AVR928: Sensorless methods to drive BLDC motors
1 Introduction
This application note describes how to implement a sensorless commutation of
BLDC motors with the ATAVRMC320 development kit.
The ATmega32M1 is equipped with integrated peripherals that reduce the number
of external components required in a BLDC application. The ATmega32M1 is
suitable for sensorless commutation and for commutation with Hall sensors as well,
but this application note focuses on the sensorless commutation.
The AVR928 Application Note describes the theory of the sensorless control
method and must be carefully read first.
8-bit Microcontrollers
Application Note
Rev. 8306B-AVR-05/10 2 AVR172
8306B-AVR-05/10
2 Hardware
The hardware includes the ATAVRMC310 and ATAVRMC300 boards which are the
two parts of the ATAVRMC320 Starter kit.
Please refer to the ATAVRMC300 and ATAVRMC310 user guides :
- AVR430: MC300 Hardware User Guide
- AVR470: MC310 Hardware User Guide
2.1 MC310 jumpers setting
The AVR172 firmware has been developed with the following jumper settings:
Table 2-1.ATAVRMC310 jumpers setting for sensorless control
Designator Setting Function
J5 Vm connect PB4 to Vm’ (motor voltage measurement if necessary)
J6 PFC OC Connect to overcurrent signal
J7 none used by CAN applications
J8 ShCo connect PC5 to ShCo for current measurement
J9 GNDm connect PC4 to GNDm for current measurement
J12 TxD connect PD3 to the RS232 driver
MOSI A Connect PD3 to ISP connector (for ISP use)
RxDUSB Connect PD3 to RxD1 (for USB interface use)
J13 RxD connect PD4 to the RS232 driver
SCK Connect PD3 to ISP connector (for ISP use)
TxDUSB Connect PD3 to RxD1 (for USB interface use)
J15 none used by CAN application to add a termination resistor
J21 Cmp- connect ACMP0- to V+W bemf conditioning
J22 Cmp+ connect ACMP0+ to U bemf conditioning
J23 Cmp- connect ACMP1- to U+W bemf conditioning
J24 Cmp+ connect ACMP1+ to V bemf conditioning
J25 Cmp- connect ACMP2- to U+V bemf conditioning
J26 Cmp+ connect ACMP2+ to W bemf conditioning
J28 VCC supply the on board USB dongle from the board power supply
See also following picture of MC310 Jumpers configurations : AVR172
3
8306B-AVR-05/10
Figure 1. MC310 Jumpers configuration
2.2 MC300 jumper settings
Table 2-1. ATAVRMC300 jumpers setting for sensorless control
Designator Setting Function
J2 none provide +5V to supply the ATAVRMC310 board
On ATAVRMC300, Vm and Vin connectors can be supplied from the same +12V/7A
power supply. Nevertheless a separate +12V/1A can also be used to supply the Vin
(processor supply voltage).
2.3 Power-supply
This firmware example has been configured according to a power-supply Vm=12V.
This power-supply must be able to provide up to 4A output current.
2.4 Motor
The BLDC motor provided inside MC320 and MC300 Motor Control Kit has the
following characteristics:
Manufacturer : TECMOTION
Number of phases : 3
Number of poles : 8 (4 pairs)
Rated voltage : 24V
Rated speed : 4000 rpm
Rated torque : 62.5 Nm
Torque constant : 35 Nm/A = k_tau4 AVR172
8306B-AVR-05/10
Line to Line Resistance : 1.8 ohm = R
Back EMF : 3.66 V/Krpm = k_e
Peak current : 5.4A
As Vm=12V, the rated speed will be 2000 rpm.
2.5 ATmega32M1 Configuration
ATmega32M1 must be programmed to run at 16MHz using PLL (set corresponding
Fuse bits).
The CKDIV8 fuse must be disabled.
Extended/High/Low Fuses configurations are : FF/DF/F3
2.6 Technical Advices
2.6.1 Disconnecting the BLDC Motor
The BLDC motor must not be disconnected while it is running or while its coils carry
current. It is allowed to disconnect a BLDC motor if the PWM duty cycle is 0% and the
rotor is at rest so that no current is driven through the coils. Be careful, when stopping
the power supply or PWM, a BLDC motor with a high moment of inertia is able to run
for a relatively long time.
2.6.2 Ground and Power Wirings
One design its own board has to take care of the ground wiring and power wiring. The
power supply of the processor and additional signal conditioning components (e.g.
additional fast comparators, operational amplifiers, …) has to be decoupled from the
motor power supply. The ground connection has to be of low resistance and low
inductance to prevent against voltage drop and noise due to high currents. A ground
plane within a multi layer PCB is recommended for proper operation.
3 Firmware
The example firmware is based on the Sensorless method described in AVR928
Application Note.
It is operating in sensorless mode using the ATmega32M1 internal comparators. Hall
sensor wires of the BLDC motor of the kit can remain unconnected.
The source file directory embeds an html documentation which can be opened
through the readme.html file.
The theory of the different tasks has been detailed in AVR928. The application to
ATmega32M1 is detailed in following sections.
3.1 Main Flow chart
The firmware main flowchart is described below : AVR172
5
8306B-AVR-05/10
Figure 2. Main flow chart
The tasks are scheduled thanks to the g_tick produced each 1.024ms with Timer0. 6 AVR172
8306B-AVR-05/10
3.2 MS_ALIGN phase
The ALIGN phase forces the motor at a specific position. The time of this phase is
controlled with ALIGN_TIME constant which is the ru_period_counter initial value
(200 for MC310 motor).
3.3 RAMP_UP phase
The ramp-up charateristics (duty-cycles and times) are stored in two tables:
• ramp_up_duty_table[] : which provides the duty_cycle of the step
• ramp_up_time_table[] : which provides the length of the step (ru_step_length)
These two tables are specific to the motor and the application.
The scanning of the step sequences and the monitoring of the step length are
achieved thanks to three independant counters :
- ru_step_length_cntr : which counts the commutation time (up to ru_step_length
variable)
- ru_period_counter : which counts the step length (up to RAMP_UP_PERIOD
constant)
- ramp_up_index : which counts the step numbers (up to
RAMP_UP_INDEX_MAX constant)
The figure below provides a waveform of steps timing :
Figure 3. Steps timing AVR172
7
8306B-AVR-05/10
3.3.1 Time of steps
The step time is RAMP_UP_PERIOD = 50ms.
3.3.2 Number of steps
The parameter : RAMP_UP_INDEX_MAX = 9, defines 10 steps ramp up.
3.3.3 Parameters tables
In firmware example, the tables have been defined according to the characteristics of
the motor provided in the kit (see parameters in 2.4 Motor section) :
ramp_up_time_table[] = {26,23,20,17,14,11,8,5,3,2,2};
ramp_up_duty_table[] = {122,124,126,129,131,133,135,137,140,143,145};
3.3.4 Sp1/pwm1
The usual parameters described in AVR928 Application Note are:
• Pwm1 = 50%
• Sp1 = Sp_max/60
The parameters defined with MC310 Tecmotion motor are:
• Pwm1 = 48% (= 122/256)
• Sp1 :
Sp1 is defined thanks to the initialization value of ru_step_length :
ru_step_length = RAMP_UP_STEP_MAX = 40
This variable determines one commutation each 40ms.
So an electrical rotation time is 120ms. As the motor has 4 pairs of poles, the
mechanical rotation time is 480ms. So the rotation speed is 60/0.48 = 125 rpm.
So Sp1 = Sp_max/32.
The second value of ru_step_length is 26 in the time table. It defines the following
commutation time.
3.3.5 Sp2/pwm2
The theorical parameters described in AVR928 Application Note are:
• Pwm2 = 60%
• Sp2 = Sp_max/6 = Sp1 / 10
The parameters defined with Tecmotion motor are:
• Pwm2 = 57% (= 145/256)
• Sp2 :
Sp2 is defined thanks to the last value of ru_step_length : 2
This variable determines one commutation each 4ms.
So an electrical rotation time is 12ms. As the motor has 4 pairs of poles, the
mechanical rotation time is 48ms. So the rotation speed is 60/0.048 = 1250 rpm.
So Sp2 = Sp_max/3.2. 8 AVR172
8306B-AVR-05/10
This confirms also the usual ratio = 10 between Sp1 and Sp2 which is defined in
AVR498 Application Note.
3.4 LAST_RAMP_UP phase
To avoid a shorten last step, this phase monitors the last ramp-up step to guarantee it
is ended properly before running in closed loop.
3.5 RUNNING Phase
3.5.1 Closed-loop block diagram
The Running phase is a sensorless closed loop which block diagram is following :
Figure 4. Closed-loop block diagram AVR172
9
8306B-AVR-05/10
3.5.2 Running flowchart
The flowchart is following :
Figure 5. Closed-loop flowchart
•
Motor_state is kept equal to MS_RUNNING
mci_set_ref_speed() function updates the speed setpoint according to the
potentiometer adjustment or the speed command received on serial transmission.
In mc_regulation_loop() function, duty_cycle_reference is the duty_cycle variable
which controls the PWM generator. This variable is the result of following functions :
• In OPEN_LOOP:
mci_set_ref_speed() function
• In SPEED_LOOP: 10 AVR172
8306B-AVR-05/10
mc_control_speed(2*mci_get_ref_speed())
duty-cycle_reference is calculated from ref_speed and from
monitored mci_get_measured_speed()
measured_speed = (KSPEED * 4) / mci_measured_period
with mci_measured_period calculated in the Interrupt vector of
Analog Comparator 1. This interrupt uses Timer 0 to compute the
period.
• In CURRENT_LOOP :
mc_control_current(mc_get_potentiometer_value()
3.5.3 Sensorless Detection and Commutation Management
The analog comparators 0, 1 and 2 are used to detect the zero crossing of the U, V
and W phases.
The timer 1 is used to monitor the time between two consecutive zero crossings. This
time corresponds to one sector of the electrical rotation of the motor. It equals 60° of
the entire electrical period of the motor.
When a zero crossing event occurs, the timer 1 value is stored. Then this value is
divided by 2 (providing the 30° time) and loaded into the Compare A register of timer
1. Then this value is added to the half of itself to provide the 45° time and loaded into
the Compare B register of timer 1.
The timer 1 compare A event occurs 30° after the zero crossing. It activates the next
commutation state and masks the zero crossing to avoid the discharge of the
inductance (demagnetization) pulse generated at the end of a step when the active
switches are released.
Due to the inductance of the motor coils, a voltage equals to -Ldi/dt is generated, the
demagnetization is done through the diodes of the power bridge.
The timer 1 compare B event releases the zero crossing mask : enables the
comparator n interrupt according to the motor_step variable. This Timer1 interrupt
provides the demagnetization mask delay. AVR172
11
8306B-AVR-05/10
4 RS232 Communication with firmware
4.1 Connecting ATAVRMC310 to use the RS232 interface
Connect PC com port to the ATAVRMC310 RS232 connector through a direct cable.
The serial configuration is:
• 38400 bauds,
• 8 bit data bit,
• 1 stop bit,
• no handshake,
4.2 PC applications
User can communicate with firmware through RS232 with usual PC serial
communication applications (i.e. Hyperterminal) or the Atmel “Motor Control Center”
application which can be downloaded from Atmel web at url : http://www.atmel.com
4.2.1 PC Terminal : RS232 Messages and Commands
At power up the following welcome message is received on terminal :
“ATMEL Motor Control Interface”.
The following commands can be sent to the firmware:
Table 2-1. List of commands
Command Action
ru Run motor
st Stop Motor
help Gives help
fw Set direction to Forward
bw Set direction to Backward
ss Set Speed (followed with speed value)
gi Get ID
g0 Get Status 0
g1 Get Status 1
4.2.2 Motor Control Center
The User Guide is available in Install directory at URL :
C:\Program Files\Atmel\Motor Control Center\help\Overview.htm
The AVR172 Target must be selected first to get the right configuration :
To select a target, execute the File > Select Target command or click the
button in the toolbar. The following dialog pops up: 12 AVR172
8306B-AVR-05/10
Figure 6. Motor Control Center Interface
5 USB communication
Communication can be achieved from PC to USB connector of MC310 board.
The AVR470, MC310 Hardware User Guide details the configuration to be achieved.
Communication port becomes a Virtual Com port. Same tools as described in section
4 (RS232 Communication with firmware), can be used through this Virtual Com port. 8306B-AVR-05/10
Disclaimer
Headquarters International
Atmel Corporation
2325 Orchard Parkway
San Jose, CA 95131
USA
Tel: 1(408) 441-0311
Fax: 1(408) 487-2600
Atmel Asia
Unit 1-5 & 16, 19/F
BEA Tower, Millennium City 5
418 Kwun Tong Road
Kwun Tong, Kowloon
Hong Kong
Tel: (852) 2245-6100
Fax: (852) 2722-1369
Product Contact
Atmel Europe
Le Krebs
8, Rue Jean-Pierre Timbaud
BP 309
78054 Saint-Quentin-enYvelines
Cedex
France
Tel: (33) 1-30-60-70-00
Fax: (33) 1-30-60-71-11
Atmel Japan
9F, Tonetsu Shinkawa Bldg.
1-24-8 Shinkawa
Chuo-ku, Tokyo 104-0033
Japan
Tel: (81) 3-3523-3551
Fax: (81) 3-3523-7581
Web Site
http://www.atmel.com/
Technical Support
avr@atmel.com
Sales Contact
www.atmel.com/contacts
Literature Request
www.atmel.com/literature
Disclaimer: The information in this document is provided in connection with Atmel products. No license, express or implied, by estoppel or otherwise, to any
intellectual property right is granted by this document or in connection with the sale of Atmel products. EXCEPT AS SET FORTH IN ATMEL’S TERMS AND
CONDITIONS OF SALE LOCATED ON ATMEL’S WEB SITE, ATMEL ASSUMES NO LIABILITY WHATSOEVER AND DISCLAIMS ANY EXPRESS, IMPLIED
OR STATUTORY WARRANTY RELATING TO ITS PRODUCTS INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTY OF MERCHANTABILITY,
FITNESS FOR A PARTICULAR PURPOSE, OR NON-INFRINGEMENT. IN NO EVENT SHALL ATMEL BE LIABLE FOR ANY DIRECT, INDIRECT,
CONSEQUENTIAL, PUNITIVE, SPECIAL OR INCIDENTAL DAMAGES (INCLUDING, WITHOUT LIMITATION, DAMAGES FOR LOSS OF PROFITS,
BUSINESS INTERRUPTION, OR LOSS OF INFORMATION) ARISING OUT OF THE USE OR INABILITY TO USE THIS DOCUMENT, EVEN IF ATMEL HAS
BEEN ADVISED OF THE POSSIBILITY OF SUCH DAMAGES. Atmel makes no representations or warranties with respect to the accuracy or completeness of the
contents of this document and reserves the right to make changes to specifications and product descriptions at any time without notice. Atmel does not make any
commitment to update the information contained herein. Unless specifically provided otherwise, Atmel products are not suitable for, and shall not be used in,
automotive applications. Atmel’s products are not intended, authorized, or warranted for use as components in applications intended to support or sustain life.
© 2010 Atmel Corporation. All rights reserved. Atmel®
, Atmel logo and combinations thereof, AVR®
, AVR®
logo and others, are the
registered trademarks or trademarks of Atmel Corporation or its subsidiaries. Other terms and product names may be trademarks of others.
1. Product profile
1.1 General description
NPN/NPN general-purpose transistor pair in a small SOT457 (SC-74) Surface-Mounted
Device (SMD) plastic package.
1.2 Features
■ Low collector capacitance
■ Low collector-emitter saturation voltage
■ Closely matched current gain
■ Reduces number of components and board space
■ No mutual interference between the transistors
■ AEC-Q101 qualified
1.3 Applications
■ General-purpose switching and amplification
1.4 Quick reference data
BC846DS
65 V, 100 mA NPN/NPN general-purpose transistor
Rev. 01 — 17 July 2009 Product data sheet
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
Per transistor
VCEO collector-emitter voltage open base - - 65 V
IC collector current - - 100 mA
hFE DC current gain VCE = 5 V; IC = 2 mA 200 300 450BC846DS_1 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 01 — 17 July 2009 2 of 12
NXP Semiconductors BC846DS
65 V, 100 mA NPN/NPN general-purpose transistor
2. Pinning information
3. Ordering information
4. Marking
5. Limiting values
Table 2. Pinning
Pin Description Simplified outline Graphic symbol
1 emitter TR1
2 base TR1
3 collector TR2
4 emitter TR2
5 base TR2
6 collector TR1
1 3 2
6 5 4
sym020
1 2 3
6 5
TR1
TR2
4
Table 3. Ordering information
Type number Package
Name Description Version
BC846DS SC-74 plastic surface-mounted package (TSOP6); 6 leads SOT457
Table 4. Marking codes
Type number Marking code
BC846DS ZK
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
Per transistor
VCBO collector-base voltage open emitter - 80 V
VCEO collector-emitter voltage open base - 65 V
VEBO emitter-base voltage open collector - 6 V
IC collector current - 100 mA
ICM peak collector current single pulse;
tp ≤ 1 ms
- 200 mA
IBM peak base current single pulse;
tp ≤ 1 ms
- 200 mA
Ptot total power dissipation Tamb ≤ 25 °C [1] - 250 mW
Per device
Ptot total power dissipation Tamb ≤ 25 °C [1] - 380 mWBC846DS_1 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 01 — 17 July 2009 3 of 12
NXP Semiconductors BC846DS
65 V, 100 mA NPN/NPN general-purpose transistor
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
6. Thermal characteristics
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Tj junction temperature - 150 °C
Tamb ambient temperature −55 +150 °C
Tstg storage temperature −65 +150 °C
FR4 PCB, standard footprint
Fig 1. Per device: Power derating curve SOT457 (SC-74)
Table 5. Limiting values …continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
Tamb (°C)
−75 175 −25 25 75 125
006aab621
200
300
100
400
500
Ptot
(mW)
0
Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
Per transistor
Rth(j-a) thermal resistance from
junction to ambient
in free air [1] - - 500 K/W
Rth(j-sp) thermal resistance from
junction to solder point
- - 250 K/W
Per device
Rth(j-a) thermal resistance from
junction to ambient
in free air [1] - - 328 K/WBC846DS_1 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 01 — 17 July 2009 4 of 12
NXP Semiconductors BC846DS
65 V, 100 mA NPN/NPN general-purpose transistor
7. Characteristics
FR4 PCB, standard footprint
Fig 2. Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration;
typical values
006aab622
10−5 10 10 −2 10−4 102 10−1
tp (s)
10−3 103 1
102
10
103
Zth(j-a)
(K/W)
1
δ = 1
0.75
0.50
0.33
0.10
0.05
0.02
0.01
0
0.20
Table 7. Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
Per transistor
ICBO collector-base cut-off
current
VCB = 50 V; IE = 0 A - - 15 nA
VCB = 30 V; IE = 0 A;
Tj = 150 °C
--5 µA
IEBO emitter-base cut-off
current
VEB = 6 V; IC = 0 A - - 100 nA
hFE DC current gain VCE =5V
IC = 10 µA - 280 -
IC = 2 mA 200 300 450
VCEsat collector-emitter
saturation voltage
IC = 10 mA; IB = 0.5 mA - 55 100 mV
IC = 100 mA; IB = 5 mA - 200 300 mV
VBEsat base-emitter
saturation voltage
IC = 10 mA; IB = 0.5 mA - 755 850 mV
IC = 100 mA; IB = 5 mA - 1000 - mV
VBE base-emitter voltage VCE =5V
IC = 2 mA 580 650 700 mV
IC = 10 mA - - 770 mVBC846DS_1 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 01 — 17 July 2009 5 of 12
NXP Semiconductors BC846DS
65 V, 100 mA NPN/NPN general-purpose transistor
Cc collector capacitance VCB = 10 V; IE = ie = 0 A;
f = 1 MHz
- 1.9 - pF
Ce emitter capacitance VEB = 0.5 V; IC = ic = 0 A;
f = 1 MHz
- 11 - pF
fT transition frequency VCE = 5 V; IC = 10 mA;
f = 100 MHz
100 - - MHz
NF noise figure VCE = 5 V; IC = 0.2 mA;
RS =2kΩ;
f = 10 Hz to 15.7 kHz
- 1.9 - dB
VCE = 5 V; IC = 0.2 mA;
RS =2kΩ; f = 1 kHz;
B = 200 Hz
- 3.1 - dB
Table 7. Characteristics …continued
Tamb = 25 °C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
VCE =5V
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Tamb = 25 °C
Fig 3. Per transistor: DC current gain as a function of
collector current; typical values
Fig 4. Per transistor: Collector current as a function
of collector-emitter voltage; typical values
006aaa533
200
400
600
hFE
0
IC (mA)
10−2 103 102 10−1 1 10
(3)
(1)
(2)
006aaa532
VCE (V)
0 10 2 4 6 8
0.08
0.12
0.04
0.16
0.20
IC
(A)
0
IB (mA) = 4.50
2.70
3.15
4.05
3.60
0.45
0.90
1.35
1.80
2.25BC846DS_1 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 01 — 17 July 2009 6 of 12
NXP Semiconductors BC846DS
65 V, 100 mA NPN/NPN general-purpose transistor
VCE = 5 V; Tamb = 25 °C IC/IB = 20
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
Fig 5. Per transistor: Base-emitter voltage as a
function of collector current; typical values
Fig 6. Per transistor: Base-emitter saturation voltage
as a function of collector current; typical
values
IC/IB = 20
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
VCE = 5 V; Tamb = 25 °C
Fig 7. Per transistor: Collector-emitter saturation
voltage as a function of collector current;
typical values
Fig 8. Per transistor: Transition frequency as a
function of collector current; typical values
006aaa536
0.6
0.8
1
VBE
(V)
0.4
IC (mA)
10−1 103 102 1 10
006aaa534
IC (mA)
10−1 103 102 1 10
0.5
0.9
1.3
0.3
0.7
1.1
VBEsat
(V)
0.1
(1)
(2)
(3)
006aaa535
1
10−1
10
VCEsat
(V)
10−2
IC (mA)
10−1 103 102 1 10
(1)
(2)
(3)
006aaa537
IC (mA)
1 102 10
102
103
fT
(MHz)
10BC846DS_1 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 01 — 17 July 2009 7 of 12
NXP Semiconductors BC846DS
65 V, 100 mA NPN/NPN general-purpose transistor
f = 1 MHz; Tamb = 25 °C f = 1 MHz; Tamb = 25 °C
Fig 9. Per transistor: Collector capacitance as a
function of collector-base voltage; typical
values
Fig 10. Per transistor: Emitter capacitance as a
function of emitter-base voltage; typical values
VCB (V)
0 10 2 4 6 8
006aab620
2
4
6
Cc
(pF)
0
006aaa539
VEB (V)
0 6 2 4
9
11
7
13
15
Ce
(pF)
5BC846DS_1 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 01 — 17 July 2009 8 of 12
NXP Semiconductors BC846DS
65 V, 100 mA NPN/NPN general-purpose transistor
8. Test information
8.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
9. Package outline
10. Packing information
[1] For further information and the availability of packing methods, see Section 14.
[2] T1: normal taping
[3] T2: reverse taping
Fig 11. Package outline SOT457 (SC-74)
Dimensions in mm 04-11-08
3.0
2.5
1.7
1.3
3.1
2.7
pin 1 index
1.9
0.26
0.10
0.40
0.25 0.95
1.1
0.9
0.6
0.2
1 3 2
6 5 4
Table 8. Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.[1]
Type number Package Description Packing quantity
3000 10000
BC846DS SOT457 4 mm pitch, 8 mm tape and reel; T1 [2] -115 -135
4 mm pitch, 8 mm tape and reel; T2 [3] -125 -165BC846DS_1 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 01 — 17 July 2009 9 of 12
NXP Semiconductors BC846DS
65 V, 100 mA NPN/NPN general-purpose transistor
11. Soldering
Fig 12. Reflow soldering footprint SOT457 (SC-74)
Fig 13. Wave soldering footprint SOT457 (SC-74)
solder lands
solder resist
occupied area
solder paste
sot457_fr
3.45
1.95
3.3 2.825
0.45
(6×)
0.55
(6×)
0.7
(6×)
0.8
(6×)
2.4
0.95
0.95
Dimensions in mm
sot457_fw
5.3
5.05
1.45
(6×)
0.45
(2×)
1.5
(4×)
2.85
1.475
1.475
solder lands
solder resist
occupied area
preferred transport
direction during soldering
Dimensions in mmBC846DS_1 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 01 — 17 July 2009 10 of 12
NXP Semiconductors BC846DS
65 V, 100 mA NPN/NPN general-purpose transistor
12. Revision history
Table 9. Revision history
Document ID Release date Data sheet status Change notice Supersedes
BC846DS_1 20090717 Product data sheet - -BC846DS_1 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 01 — 17 July 2009 11 of 12
NXP Semiconductors BC846DS
65 V, 100 mA NPN/NPN general-purpose transistor
13. Legal information
13.1 Data sheet status
[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
13.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
13.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from national authorities.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
13.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
14. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Document status[1][2] Product status[3] Definition
Objective [short] data sheet Development This document contains data from the objective specification for product development.
Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.
Product [short] data sheet Production This document contains the product specification.NXP Semiconductors BC846DS
65 V, 100 mA NPN/NPN general-purpose transistor
© NXP B.V. 2009. All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 17 July 2009
Document identifier: BC846DS_1
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
15. Contents
1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 General description. . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.4 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
3 Ordering information . . . . . . . . . . . . . . . . . . . . . 2
4 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
6 Thermal characteristics. . . . . . . . . . . . . . . . . . . 3
7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 4
8 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 8
8.1 Quality information . . . . . . . . . . . . . . . . . . . . . . 8
9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8
10 Packing information. . . . . . . . . . . . . . . . . . . . . . 8
11 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
12 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 10
13 Legal information. . . . . . . . . . . . . . . . . . . . . . . 11
13.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11
13.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
13.3 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
13.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 11
14 Contact information. . . . . . . . . . . . . . . . . . . . . 11
15 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
1. Product profile
1.1 General description
Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an
integrated guard ring for stress protection, encapsulated in a SOD128 small and flat lead
Surface-Mounted Device (SMD) plastic package.
1.2 Features
■ Average forward current: IF(AV) ≤ 1 A
■ Reverse voltage: VR ≤ 30 V
■ Low forward voltage
■ High power capability due to clip-bond technology
■ AEC-Q101 qualified
■ Small and flat lead SMD plastic package
1.3 Applications
■ Low voltage rectification
■ High efficiency DC-to-DC conversion
■ Switch Mode Power Supply (SMPS)
■ Reverse polarity protection
■ Low power consumption applications
1.4 Quick reference data
[1] Device mounted on a ceramic Printed-Circuit Board (PCB), Al2O3, standard footprint.
PMEG3010EP
1 A low VF MEGA Schottky barrier rectifier
Rev. 01 — 30 December 2008 Product data sheet
Table 1. Quick reference data
Tj = 25 °C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
IF(AV) average forward current square wave;
δ = 0.5;
f = 20 kHz
Tamb ≤ 130 °C [1] - - 1A
Tsp ≤ 145 °C - - 1A
VR reverse voltage - - 30 V
VF forward voltage IF = 1 A - 320 360 mV
IR reverse current VR = 30 V - 0.6 1.5 mAPMEG3010EP_1 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 01 — 30 December 2008 2 of 13
NXP Semiconductors PMEG3010EP
1 A low VF MEGA Schottky barrier rectifier
2. Pinning information
[1] The marking bar indicates the cathode.
3. Ordering information
4. Marking
5. Limiting values
Table 2. Pinning
Pin Description Simplified outline Graphic symbol
1 cathode [1]
2 anode 1 2
sym001
1 2
Table 3. Ordering information
Type number Package
Name Description Version
PMEG3010EP - plastic surface-mounted package; 2 leads SOD128
Table 4. Marking codes
Type number Marking code
PMEG3010EP A1
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VR reverse voltage Tj = 25 °C - 30 V
IF(AV) average forward current square wave;
δ = 0.5;
f = 20 kHz
Tamb ≤ 130 °C [1] - 1A
Tsp ≤ 145 °C - 1A
IFSM non-repetitive peak
forward current
square wave;
tp = 8 ms
[2] - 50 A
Ptot total power dissipation Tamb ≤ 25 °C [3][4] - 625 mW
[3][5] - 1050 mW
[3][1] - 2100 mWPMEG3010EP_1 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 01 — 30 December 2008 3 of 13
NXP Semiconductors PMEG3010EP
1 A low VF MEGA Schottky barrier rectifier
[1] Device mounted on a ceramic PCB, Al2O3, standard footprint.
[2] Tj = 25 °C prior to surge.
[3] Reflow soldering is the only recommended soldering method.
[4] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[5] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.
6. Thermal characteristics
[1] For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse
power losses PR are a significant part of the total power losses.
[2] Reflow soldering is the only recommended soldering method.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[4] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.
[5] Device mounted on a ceramic PCB, Al2O3, standard footprint.
[6] Soldering point of cathode tab.
Tj junction temperature - 150 °C
Tamb ambient temperature −55 +150 °C
Tstg storage temperature −65 +150 °C
Table 5. Limiting values …continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
Rth(j-a) thermal resistance from
junction to ambient
in free air [1][2]
[3] - - 200 K/W
[4] - - 120 K/W
[5] - - 60 K/W
Rth(j-sp) thermal resistance from
junction to solder point
[6] - - 12 K/WPMEG3010EP_1 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 01 — 30 December 2008 4 of 13
NXP Semiconductors PMEG3010EP
1 A low VF MEGA Schottky barrier rectifier
FR4 PCB, standard footprint
Fig 1. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
FR4 PCB, mounting pad for cathode 1 cm2
Fig 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
006aab296
10
1
102
103
Zth(j-a)
(K/W)
10−1
tp (s)
10−3 102 103 10 1 10 −2 10−1
duty cycle =
1
0.75
0.5
0.33
0.25 0.2
0.1
0.05
0.02 0.01
0
006aab297
10
1
102
103
Zth(j-a)
(K/W)
10−1
tp (s)
10−3 102 103 10 1 10 −2 10−1
duty cycle =
1
0.75
0.5
0.33 0.25
0.2
0.1
0.05
0.02 0.01
0PMEG3010EP_1 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 01 — 30 December 2008 5 of 13
NXP Semiconductors PMEG3010EP
1 A low VF MEGA Schottky barrier rectifier
7. Characteristics
Ceramic PCB, Al2O3, standard footprint
Fig 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
006aab298
10
1
102
103
Zth(j-a)
(K/W)
10−1
tp (s)
10−3 102 103 10 1 10 −2 10−1
duty cycle =
1
0.75
0.5 0.33
0.25 0.2
0.1
0.05
0.02 0.01
0
Table 7. Characteristics
Tj = 25 °C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
VF forward voltage IF = 0.1 A - 230 260 mV
IF = 0.5 A - 280 310 mV
IF = 1 A - 320 360 mV
IR reverse current VR = 5 V - 55 - µA
VR = 30 V - 0.6 1.5 mA
Cd diode capacitance f = 1 MHz
VR = 1 V - 170 - pF
VR = 10 V - 60 - pFPMEG3010EP_1 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 01 — 30 December 2008 6 of 13
NXP Semiconductors PMEG3010EP
1 A low VF MEGA Schottky barrier rectifier
(1) Tj = 150 °C
(2) Tj = 125 °C
(3) Tj = 85 °C
(4) Tj = 25 °C
(5) Tj = −40 °C
(1) Tj = 125 °C
(2) Tj = 85 °C
(3) Tj = 25 °C
(4) Tj = −40 °C
Fig 4. Forward current as a function of forward
voltage; typical values
Fig 5. Reverse current as a function of reverse
voltage; typical values
f = 1 MHz; Tamb = 25 °C
Fig 6. Diode capacitance as a function of reverse voltage; typical values
006aab299
10−2
10−3
1
10−1
10
IF
(A)
10−4
VF (V)
0 0.8 0.2 0.4 0.6
(1)
(2)
(3) (4) (5)
006aab300
VR (V)
0 30 10 20
1
10−1
10−2
10−3
10−4
10−5
10−6
IR
(A)
10−7
(1)
(2)
(3)
(4)
VR (V)
0 30 10 20
006aab301
100
200
300
Cd
(pF)
0PMEG3010EP_1 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 01 — 30 December 2008 7 of 13
NXP Semiconductors PMEG3010EP
1 A low VF MEGA Schottky barrier rectifier
Tj = 150 °C
(1) δ = 0.1
(2) δ = 0.2
(3) δ = 0.5
(4) δ = 1
Tj = 125 °C
(1) δ = 1
(2) δ = 0.9
(3) δ = 0.8
(4) δ = 0.5
Fig 7. Average forward power dissipation as a
function of average forward current; typical
values
Fig 8. Average reverse power dissipation as a
function of reverse voltage; typical values
FR4 PCB, standard footprint
Tj = 150 °C
(1) δ = 1; DC
(2) δ = 0.5; f = 20 kHz
(3) δ = 0.2; f = 20 kHz
(4) δ = 0.1; f = 20 kHz
FR4 PCB, mounting pad for cathode 1 cm2
Tj = 150 °C
(1) δ = 1; DC
(2) δ = 0.5; f = 20 kHz
(3) δ = 0.2; f = 20 kHz
(4) δ = 0.1; f = 20 kHz
Fig 9. Average forward current as a function of
ambient temperature; typical values
Fig 10. Average forward current as a function of
ambient temperature; typical values
006aab302
IF(AV) (A)
0 1.5 0.5 1
0.2
0.1
0.3
0.4
PF(AV)
(W)
0
(1) (2)
(3)
(4)
VR (V)
0 30 10 20
006aab303 3.5
PR(AV)
(W)
0
0.5
1
1.5
2
2.5
3
(1)
(2)
(3)
(4)
Tamb (°C)
0 75 25 150 50 100 125 175
006aab304
0.8
0.4
1.2
1.6
IF(AV)
(A)
0
(1)
(2)
(3)
(4)
Tamb (°C)
0 75 25 150 50 100 125 175
006aab305
0.8
0.4
1.2
1.6
IF(AV)
(A)
0
(1)
(2)
(3)
(4)PMEG3010EP_1 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 01 — 30 December 2008 8 of 13
NXP Semiconductors PMEG3010EP
1 A low VF MEGA Schottky barrier rectifier
Ceramic PCB, Al2O3, standard footprint
Tj = 150 °C
(1) δ = 1; DC
(2) δ = 0.5; f = 20 kHz
(3) δ = 0.2; f = 20 kHz
(4) δ = 0.1; f = 20 kHz
Tj = 150 °C
(1) δ = 1; DC
(2) δ = 0.5; f = 20 kHz
(3) δ = 0.2; f = 20 kHz
(4) δ = 0.1; f = 20 kHz
Fig 11. Average forward current as a function of
ambient temperature; typical values
Fig 12. Average forward current as a function of
solder point temperature; typical values
Tamb (°C)
0 75 25 150 50 100 125 175
006aab306
0.8
0.4
1.2
1.6
IF(AV)
(A)
0
(1)
(2)
(3)
(4)
Tsp (°C)
0 75 25 150 50 100 125 175
006aab307
0.8
0.4
1.2
1.6
IF(AV)
(A)
0
(1)
(2)
(3)
(4)PMEG3010EP_1 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 01 — 30 December 2008 9 of 13
NXP Semiconductors PMEG3010EP
1 A low VF MEGA Schottky barrier rectifier
8. Test information
The current ratings for the typical waveforms as shown in Figure 9, 10, 11 and 12 are
calculated according to the equations: with IM defined as peak current,
at DC, and with IRMS defined as RMS current.
8.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
9. Package outline
Fig 13. Duty cycle definition
t1
t2
P
t
006aaa812
duty cycle δ =
t1
t2
IF AV ( ) = IM × δ
IRMS IF AV ( ) = IRMS = IM × δ
Fig 14. Package outline SOD128
Dimensions in mm 07-09-12
1.1
0.9
0.22
0.10
0.6
0.3
5.0
4.4
4.0
3.6
1.9
1.6
2.7
2.3
1
2PMEG3010EP_1 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 01 — 30 December 2008 10 of 13
NXP Semiconductors PMEG3010EP
1 A low VF MEGA Schottky barrier rectifier
10. Packing information
[1] For further information and the availability of packing methods, see Section 14.
11. Soldering
Table 8. Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.[1]
Type number Package Description Packing quantity
3000
PMEG3010EP SOD128 4 mm pitch, 12 mm tape and reel -115
Reflow soldering is the only recommended soldering method.
Fig 15. Reflow soldering footprint SOD128
solder lands
solder resist
occupied area
solder paste
3.4 2.5 2.1
(2×)
1.9
(2×)
4.4
4.2
6.2
1.2
(2×)
1.4
(2×) sod128_fr
Dimensions in mmPMEG3010EP_1 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 01 — 30 December 2008 11 of 13
NXP Semiconductors PMEG3010EP
1 A low VF MEGA Schottky barrier rectifier
12. Revision history
Table 9. Revision history
Document ID Release date Data sheet status Change notice Supersedes
PMEG3010EP_1 20081230 Product data sheet - -PMEG3010EP_1 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 01 — 30 December 2008 12 of 13
NXP Semiconductors PMEG3010EP
1 A low VF MEGA Schottky barrier rectifier
13. Legal information
13.1 Data sheet status
[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
13.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
13.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
13.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
14. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Document status[1][2] Product status[3] Definition
Objective [short] data sheet Development This document contains data from the objective specification for product development.
Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.
Product [short] data sheet Production This document contains the product specification.NXP Semiconductors PMEG3010EP
1 A low VF MEGA Schottky barrier rectifier
© NXP B.V. 2009. All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 30 December 2008
Document identifier: PMEG3010EP_1
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
15. Contents
1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 General description. . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.4 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
3 Ordering information . . . . . . . . . . . . . . . . . . . . . 2
4 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
6 Thermal characteristics. . . . . . . . . . . . . . . . . . . 3
7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 5
8 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 9
8.1 Quality information . . . . . . . . . . . . . . . . . . . . . . 9
9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9
10 Packing information. . . . . . . . . . . . . . . . . . . . . 10
11 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
12 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 11
13 Legal information. . . . . . . . . . . . . . . . . . . . . . . 12
13.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 12
13.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
13.3 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
13.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 12
14 Contact information. . . . . . . . . . . . . . . . . . . . . 12
15 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
1. Product profile
1.1 General description
Planar Schottky barrier single diode with an integrated guard ring for stress protection,
encapsulated in a SOD323F (SC-90) very small and flat lead Surface-Mounted Device
(SMD) plastic package.
1.2 Features
■ Low forward voltage
■ Very small and flat lead SMD plastic package
■ Low capacitance
■ Flat leads: excellent coplanarity and improved thermal behavior
1.3 Applications
■ Voltage clamping
■ Line termination
■ Reverse polarity protection
1.4 Quick reference data
[1] Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
BAT54J
Schottky barrier single diode
Rev. 01 — 8 March 2007 Product data sheet
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
IF forward current - - 200 mA
VR reverse voltage - - 30 V
VF forward voltage IF = 1 mA [1] - - 320 mVBAT54J_1 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 01 — 8 March 2007 2 of 8
NXP Semiconductors BAT54J
Schottky barrier single diode
2. Pinning information
[1] The marking bar indicates the cathode.
3. Ordering information
4. Marking
5. Limiting values
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
cathode 1 cm2.
Table 2. Pinning
Pin Description Simplified outline Symbol
1 cathode [1]
2 anode 1 2
sym001
1 2
Table 3. Ordering information
Type number Package
Name Description Version
BAT54J SC-90 plastic surface-mounted package; 2 leads SOD323F
Table 4. Marking codes
Type number Marking code
BAT54J AP
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VR reverse voltage - 30 V
IF forward current - 200 mA
IFRM repetitive peak forward
current
tp ≤ 1 s; δ ≤ 0.5 - 300 mA
IFSM non-repetitive peak forward
current
square wave;
tp < 10 ms
- 600 mA
Ptot total power dissipation Tamb ≤ 25 °C [1] - 550 mW
Tj junction temperature - 150 °C
Tamb ambient temperature −65 +150 °C
Tstg storage temperature −65 +150 °CBAT54J_1 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 01 — 8 March 2007 3 of 8
NXP Semiconductors BAT54J
Schottky barrier single diode
6. Thermal characteristics
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.
[2] Reflow soldering is the only recommended soldering method.
[3] Soldering point of cathode tab.
7. Characteristics
[1] Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
Rth(j-a) thermal resistance from
junction to ambient
in free air [1][2] - - 230 K/W
Rth(j-sp) thermal resistance from
junction to solder point
[3] - - 55 K/W
Table 7. Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
VF forward voltage [1]
IF = 0.1 mA - - 240 mV
IF = 1 mA - - 320 mV
IF = 10 mA - - 400 mV
IF = 30 mA - - 500 mV
IF = 100 mA - - 800 mV
IR reverse current VR = 25 V - - 2 µA
Cd diode capacitance VR = 1 V; f = 1 MHz - - 10 pFBAT54J_1 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 01 — 8 March 2007 4 of 8
NXP Semiconductors BAT54J
Schottky barrier single diode
(1) Tamb = 125 °C
(2) Tamb = 85 °C
(3) Tamb = 25 °C
(1) Tamb = 125 °C
(2) Tamb = 85 °C
(3) Tamb = 25 °C
Fig 1. Forward current as a function of forward
voltage; typical values
Fig 2. Reverse current as a function of reverse
voltage; typical values
Tamb = 25 °C; f = 1 MHz
Fig 3. Diode capacitance as a function of reverse voltage; typical values
103
102
10−1
IF
(mA)
VF (V)
10
1
0 0.4 0.8 1.2
msa892
(1) (2) (3)
(1) (2) (3)
0 10 20 30 VR (V)
103
102
10−1
IR
(µA)
10
1
(1)
(2)
(3)
msa893
0 10 20 30
0
5
10
15
VR (V)
Cd
(pF)
msa891BAT54J_1 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 01 — 8 March 2007 5 of 8
NXP Semiconductors BAT54J
Schottky barrier single diode
8. Package outline
9. Packing information
[1] For further information and the availability of packing methods, see Section 13.
10. Soldering
Fig 4. Package outline SOD323F (SC-90)
Dimensions in mm 04-09-13
0.80
0.65
0.25
0.10
0.5
0.3
2.7
2.3
1.8
1.6
0.40
0.25
1.35
1.15
1
2
Table 8. Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.[1]
Type number Package Description Packing quantity
3000 10000
BAT54J SOD323F 4 mm pitch, 8 mm tape and reel -115 -135
Reflow soldering is the only recommended soldering method.
Dimensions in mm
Fig 5. Reflow soldering footprint SOD323F (SC-90)
001aab169
1.65
0.50
(2×)
2.10
1.60
2.80
0.60
3.05
0.95 0.50
solder lands
solder resist
occupied area
solder pasteBAT54J_1 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 01 — 8 March 2007 6 of 8
NXP Semiconductors BAT54J
Schottky barrier single diode
11. Revision history
Table 9. Revision history
Document ID Release date Data sheet status Change notice Supersedes
BAT54J_1 20070308 Product data sheet - -BAT54J_1 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 01 — 8 March 2007 7 of 8
NXP Semiconductors BAT54J
Schottky barrier single diode
12. Legal information
12.1 Data sheet status
[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
12.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
12.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of a NXP Semiconductors product can reasonably be expected to
result in personal injury, death or severe property or environmental damage.
NXP Semiconductors accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment or applications and therefore
such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
12.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
13. Contact information
For additional information, please visit: http://www.nxp.com
For sales office addresses, send an email to: salesaddresses@nxp.com
Document status[1][2] Product status[3] Definition
Objective [short] data sheet Development This document contains data from the objective specification for product development.
Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.
Product [short] data sheet Production This document contains the product specification.NXP Semiconductors BAT54J
Schottky barrier single diode
© NXP B.V. 2007. All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 8 March 2007
Document identifier: BAT54J_1
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
14. Contents
1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 General description. . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.4 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
3 Ordering information . . . . . . . . . . . . . . . . . . . . . 2
4 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
6 Thermal characteristics. . . . . . . . . . . . . . . . . . . 3
7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3
8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 5
9 Packing information. . . . . . . . . . . . . . . . . . . . . . 5
10 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
11 Revision history. . . . . . . . . . . . . . . . . . . . . . . . . 6
12 Legal information. . . . . . . . . . . . . . . . . . . . . . . . 7
12.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 7
12.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
12.3 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
12.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
13 Contact information. . . . . . . . . . . . . . . . . . . . . . 7
14 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
FUJITSU SEMICONDUCTOR
DATA SHEET
Copyright©2012-2013 FUJITSU SEMICONDUCTOR LIMITED All rights reserved
2013.2
Memory FRAM
128K (16 K × 8) Bit SPI
MB85RS128B
■ DESCRIPTION
MB85RS128B is a FRAM (Ferroelectric Random Access Memory) chip in a configuration of 16,384
words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the
nonvolatile memory cells.
MB85RS128B adopts the Serial Peripheral Interface (SPI).
The MB85RS128B is able to retain data without using a back-up battery, as is needed for SRAM.
The memory cells used in the MB85RS128B can be used for 1012 read/write operations, which is a significant
improvement over the number of read and write operations supported by Flash memory and E2PROM.
MB85RS128B does not take long time to write data like Flash memories or E2PROM, and MB85RS128B
takes no wait time.
■ FEATURES
• Bit configuration : 16,384 words × 8 bits
• Serial Peripheral Interface : SPI (Serial Peripheral Interface)
Correspondent to SPI mode 0 (0, 0) and mode 3 (1, 1)
• Operating frequency : All commands except READ 33 MHz (Max)
READ command 25 MHz (Max)
• High endurance : 1012 times / byte
• Data retention : 10 years ( + 85 °C), 95 years ( + 55 °C), over 200 years ( + 35 °C)
• Operating power supply voltage : 2.7 V to 3.6 V
• Low power consumption : Operating power supply current 6 mA (Typ @33 MHz)
Standby current 9 μA (Typ)
• Operation ambient temperature range : − 40 °C to + 85 °C
• Package : 8-pin plastic SOP (FPT-8P-M02)
RoHS compliant
DS501-00020-2v0-EMB85RS128B
2 DS501-00020-2v0-E
■ PIN ASSIGNMENT
■ PIN FUNCTIONAL DESCRIPTIONS
Pin No. Pin Name Functional description
1 CS
Chip Select pin
This is an input pin to make chips select. When CS is the “H” level, device is in deselect
(standby) status and SO becomes High-Z. Inputs from other pins are ignored at this time.
When CS is the “L” level, device is in select (active) status. CS has to be the “L” level
before inputting op-code.
3 WP
Write Protect pin
This is a pin to control writing to a status register. The writing of status register (see
“■STATUS REGISTER”) is protected in related with WP and WPEN. See “■WRITING
PROTECT” for detail.
7 HOLD
Hold pin
This pin is used to interrupt serial input/output without making chips deselect. When
HOLD is the “L” level, hold operation is activated, SO becomes High-Z, SCK and SI become
don’t care. While the hold operation, CS has to be retained the “L” level.
6 SCK
Serial Clock pin
This is a clock input pin to input/output serial data. SI is loaded synchronously to a rising
edge, SO is output synchronously to a falling edge.
5 SI Serial Data Input pin
This is an input pin of serial data. This inputs op-code, address, and writing data.
2 SO
Serial Data Output pin
This is an output pin of serial data. Reading data of FRAM memory cell array and status
register data are output. This is High-Z during standby.
8 VDD Supply Voltage pin
4 GND Ground pin
GND SI
SO
VDD
WP SCK
CS
HOLD
8
7
6
4 5
3
2
1
(TOP VIEW)
(FPT-8P-M02)MB85RS128B
DS501-00020-2v0-E 3
■ BLOCK DIAGRAM
SCK
SO
SI Serial-Parallel Converter
FRAM Cell Array
16,384 ✕ 8
Column Decoder/Sense Amp/
Write Amp
FRAM
Status Register
Data Register
Parallel-Serial Converter Control Circuit
Address Counter
Ro
w Decoder
CS
WP
HOLDMB85RS128B
4 DS501-00020-2v0-E
■ SPI MODE
MB85RS128B corresponds to the SPI mode 0 (CPOL = 0, CPHA = 0) , and SPI mode 3 (CPOL = 1, CPHA = 1) .
SCK
SI
CS
SCK
SI
CS
76543210
76543210
MSB LSB
MSB LSB
SPI Mode 0
SPI Mode 3MB85RS128B
DS501-00020-2v0-E 5
■ SERIAL PERIPHERAL INTERFACE (SPI)
MB85RS128B works as a slave of SPI. More than 2 devices can be connected by using microcontroller
equipped with SPI port. By using a microcontroller not equipped with SPI port, SI and SO can be bus
connected to use.
SCK
SS1
HOLD1
MOSI
MISO
SS2
HOLD2
SCK
CS HOLD
SISO SCK
CS HOLD
SISO
MB85RS128B MB85RS128B
SCK
CS HOLD
SISO
MB85RS128B
SPI
Microcontroller
MOSI : Master Out Slave In
MISO : Master In Slave Out
SS : Slave Select
System Configuration with SPI Port
System Configuration without SPI Port
MicrocontrollerMB85RS128B
6 DS501-00020-2v0-E
■ STATUS REGISTER
■ OP-CODE
MB85RS128B accepts 8 kinds of command specified in op-code. Op-code is a code composed of 8 bits
shown in the table below. Do not input invalid codes other than those codes. If CS is risen while inputting
op-code, the command are not performed.
Bit No. Bit Name Function
7 WPEN
Status Register Write Protect
This is a bit composed of nonvolatile memories (FRAM). WPEN protects
writing to a status register (refer to “■ WRITING PROTECT”) relating with
WP input. Writing with the WRSR command and reading with the RDSR
command are possible.
6 to 4 ⎯
Not Used Bits
These are bits composed of nonvolatile memories, writing with the WRSR
command is possible, and “000” is written before shipment. These bits are
not used but they are read with the RDSR command.
3 BP1 Block Protect
This is a bit composed of nonvolatile memory. This defines size of write
protect block for the WRITE command (refer to “■ BLOCK PROTECT”).
Writing with the WRSR command and reading with the RDSR command
are possible.
2 BP0
1 WEL
Write Enable Latch
This indicates an FRAM Array and status register are writable. The
WREN command is for setting, and the WRDI command is for resetting.
With the RDSR command, reading is possible but writing is not possible
with the WRSR command. WEL is reset after the following operations.
After power ON.
After WRDI command recognition.
The rising edge of CS after WRSR command recognition.
The rising edge of CS after WRITE command recognition.
0 0 This is a bit fixed to “0”.
Name Description Op-code
WREN Set Write Enable Latch 0000 0110B
WRDI Reset Write Enable Latch 0000 0100B
RDSR Read Status Register 0000 0101B
WRSR Write Status Register 0000 0001B
READ Read Memory Code 0000 0011B
WRITE Write Memory Code 0000 0010B
RDID Read Device ID 1001 1111B
FSTRD Fast Read Memory Code 0000 1011BMB85RS128B
DS501-00020-2v0-E 7
■ COMMAND
• WREN
The WREN command sets WEL (Write Enable Latch) . WEL has to be set with the WREN command before
writing operation (WRSR command and WRITE command) . WREN command is applicable to “Up to
33 MHz operation”.
• WRDI
The WRDI command resets WEL (Write Enable Latch) . Writing operation (WRITE command and WRSR
command) are not performed when WEL is reset. WRDI command is applicable to “Up to 33 MHz operation”.
SO
SCK
SI
CS
00000110
High-Z
210 3 7654
Invalid Invalid
SO
SCK
SI
CS
00000100
High-Z
210 3 7654
Invalid InvalidMB85RS128B
8 DS501-00020-2v0-E
• RDSR
The RDSR command reads status register data. After op-code of RDSR is input to SI, 8-cycle clock is input
to SCK. The SI value is invalid for this time. SO is output synchronously to a falling edge of SCK. In the
RDSR command, repeated reading of status register is enabled by sending SCK continuously before rising
of CS. RDSR command is applicable to “Up to 33 MHz operation”.
• WRSR
The WRSR command writes data to the nonvolatile memory bit of status register. After performing WRSR
op-code to a SI pin, 8 bits writing data is input. WEL (Write Enable Latch) is not able to be written with WRSR
command. A SI value correspondent to bit 1 is ignored. Bit 0 of the status register is fixed to “0” and cannot
be written. The SI value corresponding to bit 0 is ignored. The WP signal level shall be fixed before performing
the WRSR command, and do not change the WP signal level until the end of command sequence. WRSR
command is applicable to “Up to 33 MHz operation”.
SO
SCK
SI
CS
00000101
High-Z
210 3 7654
Invalid
MSB
210 3 7654
Data Out
LSB
Invalid
SO
SCK
SI
CS
00000001
210 3 7654
Data In
MSB
210 3 7654
High-Z
LSB
7654 3 210
InstructionMB85RS128B
DS501-00020-2v0-E 9
• READ
The READ command reads FRAM memory cell array data. Arbitrary 16 bits address and op-code of READ
are input to SI. The 2-bit upper address bit is invalid. Then, 8-cycle clock is input to SCK. SO is output
synchronously to the falling edge of SCK. While reading, the SI value is invalid. When CS is risen, the READ
command is completed, but keeps on reading with automatic address increment which is enabled by continuously
sending clocks to SCK in unit of 8 cycles before CS rising. When it reaches the most significant
address, it rolls over to the starting address, and reading cycle keeps on infinitely. READ command is
applicable to “Up to 25 MHz operation”.
• WRITE
The WRITE command writes data to FRAM memory cell array. WRITE op-code, arbitrary 16 bits of address
and 8 bits of writing data are input to SI. The 2-bit upper address bit is invalid. When 8 bits of writing data is
input, data is written to FRAM memory cell array. Risen CS will terminate the WRITE command, but if you
continue sending the writing data for 8 bits each before CS rising, it is possible to continue writing with
automatic address increment. When it reaches the most significant address, it rolls over to the starting
address, and writing cycle can be continued infinitely. WRITE command is applicable to “Up to 33 MHz
operation”.
SO
SCK
SI
CS
00 0 0 X 1 12 10
MSB
76543210
MSB Data Out
High-Z
LSB
420 1
Invalid
8 131211109 8 252423222120191 2726 8 3130292
OP-CODE
0 0 1 11 X 3 13 5
16-bit Address
Invalid
LSB
6 4 57 2 0 13
SO
SCK
SI
CS
00 0 0 X 1 12 10
MSB
76543210
Data In
MSB
High-Z
LSB
420 1
8 131211109 8 252423222120191 2726 8 3130292
OP-CODE
0 0 0 11 X 3 13 5
16-bit Address
LSB
6 4 57 2 0 13MB85RS128B
10 DS501-00020-2v0-E
• FSTRD
The FSTRD command reads FRAM memory cell array data. Arbitrary 16 bits address and op-code of FSTRD
are input to SI followed by 8 bits dummy. The 2-bit upper address bit is invalid. Then, 8-cycle clock is input
to SCK. SO is output synchronously to the falling edge of SCK. While reading, the SI value is invalid. When
CS is risen, the FSTRD command is completed, but keeps on reading with automatic address increment
which is enabled by continuously sending clocks to SCK in unit of 8 cycles before CS rising. When it reaches
the most significant address, it rolls over to the starting address, and reading cycle keeps on infinitely.
FSTRD command is applicable to “Up to 33 MHz operation”.
• RDID
The RDID command reads fixed Device ID. After performing RDID op-code to SI, 32-cycle clock is input to
SCK. The SI value is invalid for this time. SO is output synchronously to a falling edge of SCK. The output
is in order of Manufacturer ID (8bit)/Continuation code (8bit)/Product ID (1st Byte)/Product ID (2nd Byte).
In the RDID command, SO holds the output state of the last bit after 32-bit Device ID output by continuously
sending SCK clock before CS is risen. RDID command is applicable to “Up to 33 MHz operation”.
SO
SCK
SI
CS
00 0 1 X 1 13
76543210
MSB
High-Z
XX
8 11109 33323130 37363534 8 393
0 0 1 12 X Invalid
LSB
6 4 57 2 0 13
1 XX 02
24 25232221
Invalid
MSB Data Out LSB
OP-CODE 16-bit Address 8-bit Dummy
SO
SCK
SI
CS
MSB
76543210
Data Out Data Out
High-Z
LSB
8 11109 333231 37363534 8 393
Invalid
30 2 2931 8
10011111
8 6 4 57 2 0 13
bit
7 6 5 4 3 2 1 0 Hex
Manufacturer ID 0 0 0 0 0 1 0 0 04H Fujitsu
Continuation code 0 1 1 1 1 1 1 1 7FH
Proprietary use Density Hex
Product ID (1st Byte) 0 0 0 0 0 1 0 0 04H
Density: 00100B =
128kbit
Proprietary use Hex
Product ID (2nd Byte) 0 0 0 0 1 0 0 1 09HMB85RS128B
DS501-00020-2v0-E 11
■ BLOCK PROTECT
Writing protect block for WRITE command is configured by the value of BP0 and BP1 in the status register.
■ WRITING PROTECT
Writing operation of the WRITE command and the WRSR command are protected with the value of WEL,
WPEN, WP as shown in the table.
■ HOLD OPERATION
Hold status is retained without aborting a command if HOLD is the “L” level while CS is the “L” level. The
timing for starting and ending hold status depends on the SCK to be the “H” level or the “L” level when a
HOLD pin input is transited to the hold condition as shown in the diagram below. In case the HOLD pin
transited to “L” level when SCK is “L” level, return the HOLD pin to “H” level at SCK being “L” level. In the
same manner, in case the HOLD pin transited to “L” level when SCK is “H” level, return the HOLD pin to “H”
level at SCK being “H” level. Arbitrary command operation is interrupted in hold status, SCK and SI inputs
become don’t care. And, SO becomes High-Z while reading command (RDSR, READ) . If CS is rising during
hold status, a command is aborted. In case the command is aborted before its recognition, WEL holds the
value before transition to HOLD status.
BP1 BP0 Protected Block
0 0 None
0 1 3000H to 3FFFH (upper 1/4)
1 0 2000H to 3FFFH (upper 1/2)
1 1 0000H to 3FFFH (all)
WEL WPEN WP Protected Blocks Unprotected Blocks Status Register
0 X X Protected Protected Protected
1 0 X Protected Unprotected Unprotected
1 1 0 Protected Unprotected Protected
1 1 1 Protected Unprotected Unprotected
SCK
CS
Hold Condition
HOLD
Hold ConditionMB85RS128B
12 DS501-00020-2v0-E
■ ABSOLUTE MAXIMUM RATINGS
*:These parameters are based on the condition that VSS is 0 V.
WARNING: Semiconductor devices can be permanently damaged by application of stress (voltage, current,
temperature, etc.) in excess of absolute maximum ratings. Do not exceed these ratings.
■ RECOMMENDED OPERATING CONDITIONS
*:These parameters are based on the condition that VSS is 0 V.
WARNING: The recommended operating conditions are required in order to ensure the normal operation of
the semiconductor device. All of the device's electrical characteristics are warranted when the
device is operated within these ranges.
Always use semiconductor devices within their recommended operating condition ranges.
Operation outside these ranges may adversely affect reliability and could result in device failure.
No warranty is made with respect to uses, operating conditions, or combinations not represented
on the data sheet. Users considering application outside the listed conditions are advised to contact
their representatives beforehand.
Parameter Symbol Rating Unit
Min Max
Power supply voltage* VDD − 0.5 + 4.0 V
Input voltage* VIN − 0.5 VDD + 0.5 V
Output voltage* VOUT − 0.5 VDD + 0.5 V
Operation ambient temperature TA − 40 + 85 °C
Storage temperature Tstg − 55 + 125 °C
Parameter Symbol
Value
Unit
Min Typ Max
Power supply voltage* VDD 2.7 3.3 3.6 V
Input high voltage* VIH VDD × 0.8 ⎯ VDD + 0.5 V
Input low voltage* VIL − 0.5 ⎯ + 0.6 V
Operation ambient temperature TA − 40 ⎯ + 85 °CMB85RS128B
DS501-00020-2v0-E 13
■ ELECTRICAL CHARACTERISTICS
1. DC Characteristics
(within recommended operating conditions)
*1 : Applicable pin : CS, WP, HOLD, SCK, SI
*2 : Applicable pin : SO
Parameter Symbol Condition
Value
Unit
Min Typ Max
Input leakage current*1 |ILI| VIN = 0 V to VDD ⎯ ⎯ 10 μA
Output leakage current*2 |ILO| VOUT = 0 V to VDD ⎯ ⎯ 10 μA
Operating power supply current IDD
SCK = 25 MHz ⎯ 4 5 mA
SCK = 33 MHz ⎯ 5 6 mA
Standby current ISB
All inputs VSS or
SCK = SI = CS = VDD
⎯ 9 50 μA
Output high voltage VOH IOH = −2 mA VDD × 0.8 ⎯ ⎯ V
Output low voltage VOL IOL = 2 mA ⎯ ⎯ 0.4 VMB85RS128B
14 DS501-00020-2v0-E
2. AC Characteristics
* : All commands except READ are applicable to “Up to 33 MHz operation”.
READ command is applicable to “Up to 25MHz operation”.
AC Test Condition
Power supply voltage : 2.7 V to 3.6 V
Operation ambient temperature : − 40 °C to + 85 °C
Input voltage magnitude : 0.3 V to 2.7 V
Input rising time : 5 ns
Input falling time : 5 ns
Input judge level : VDD/2
Output judge level : VDD/2
Parameter Symbol
Value
Up to 25MHz Operation Up to 33MHz Operation* Unit
Min Max Min Max
SCK clock frequency fCK 0 25033 MHz
Clock high time tCH 20 ⎯ 15 ⎯ ns
Clock low time tCL 20 ⎯ 15 ⎯ ns
Chip select set up time tCSU 10 ⎯ 10 ⎯ ns
Chip select hold time tCSH 10 ⎯ 10 ⎯ ns
Output disable time tOD ⎯ 20 ⎯ 20 ns
Output data valid time tODV ⎯ 18 ⎯ 13 ns
Output hold time tOH 0 ⎯ 0 ⎯ ns
Deselect time tD 60 ⎯ 40 ⎯ ns
Data in rising time tR ⎯ 50 - 50 ns
Data falling time tF ⎯ 50 - 50 ns
Data set up time tSU 5 ⎯ 5 ⎯ ns
Data hold time tH 5 ⎯ 5 ⎯ ns
HOLD set up time tHS 10 ⎯ 10 ⎯ ns
HOLD hold time tHH 10 ⎯ 10 ⎯ ns
HOLD output floating time tHZ ⎯ 20 ⎯ 20 ns
HOLD output active time tLZ ⎯ 20 ⎯ 20 nsMB85RS128B
DS501-00020-2v0-E 15
AC Load Equivalent Circuit
3. Pin Capacitance
Parameter Symbol Conditions
Value
Unit
Min Max
Output capacitance CO VDD = VIN = VOUT = 0 V,
f = 1 MHz, TA = + 25 °C
⎯ 10 pF
Input capacitance CI ⎯ 10 pF
30 pF
Output
3.3 V
1.2 k
0.95 kMB85RS128B
16 DS501-00020-2v0-E
■ TIMING DIAGRAM
• Serial Data Timing
• Hold Timing
SCK
CS
SI Valid in
SO High-Z
: H or L
tCSU
tCH tCL tCH
tSU tH
tODV
tOH tOD
tCSH
tD
High-Z
SCK
CS
SO
tHS tHS
tHH tHH tHH tHH
tHZ tLZ tHZ tLZ
tHS tHS
HOLD
High-Z High-ZMB85RS128B
DS501-00020-2v0-E 17
■ POWER ON/OFF SEQUENCE
If VDD falls down below 2.0 V, VDD is required to be started from 1.0 V or less to prevent malfunctions when
the power is turned on again (see the figure below).
If the device does not operate within the specified conditions of read cycle, write cycle or power on/off
sequence, memory data can not be guaranteed.
■ FRAM CHARACTERISTICS
*1 : Total number of reading and writing defines the minimum value of endurance, as an FRAM memory operates
with destructive readout mechanism.
*2 : Minimun values define retention time of the first reading/writing data right after shipment, and these values
are calculated by qualification results.
■ NOTE ON USE
Data written before performing IR reflow is not guaranteed after IR reflow.
Parameter Symbol
Value
Unit
Min Max
CS level hold time at power OFF tpd 200 ⎯ ns
CS level hold time at power ON tpu 85 ⎯ ns
Power supply rising time tr 0.05 200 ms
Item Min Max Unit Parameter
Read/Write Endurance*1 1012 ⎯ Times/byte Operation Ambient Temperature TA = + 85 °C
Data Retention*2
10 ⎯
Years
Operation Ambient Temperature TA = + 85 °C
95 ⎯ Operation Ambient Temperature TA = + 55 °C
≥ 200 ⎯ Operation Ambient Temperature TA = + 35 °C
GND
CS >VDD × 0.8*
tpd tr tpu
VIL (Max)
1.0 V
VIH (Min)
3.0 V
VDD
CS : don't care CS >VDD × 0.8* CS CS
GND
VIL (Max)
1.0 V
VIH (Min)
3.0 V
VDD
* : CS (Max) < VDD + 0.5 VMB85RS128B
18 DS501-00020-2v0-E
■ ESD AND LATCH-UP
• Current method of Latch-Up Resistance Test
Note : The voltage VIN is increased gradually and the current IIN of 300 mA at maximum shall flow.
Confirm the latch up does not occur under IIN = ± 300 mA.
In case the specific requirement is specified for I/O and IIN cannot be 300 mA, the voltage shall be
increased to the level that meets the specific requirement.
Test DUT Value
ESD HBM (Human Body Model)
JESD22-A114 compliant
MB85RS128BPNF-G-JNE1
≥ |2000 V|
ESD MM (Machine Model)
JESD22-A115 compliant ≥ |200 V|
ESD CDM (Charged Device Model)
JESD22-C101 compliant ⎯
Latch-Up (I-test)
JESD78 compliant ⎯
Latch-Up (Vsupply overvoltage test)
JESD78 compliant ⎯
Latch-Up (Current Method)
Proprietary method ⎯
Latch-Up (C-V Method)
Proprietary method ⎯
A
VDD
VSS
DUT
V
IIN
VIN
+
-
Test terminal
Protection Resistance
VDD
(Max.Rating)
Reference
terminalMB85RS128B
DS501-00020-2v0-E 19
• C-V method of Latch-Up Resistance Test
Note : Charge voltage alternately switching 1 and 2 approximately 2 sec interval. This switching process is
considered as one cycle.
Repeat this process 5 times. However, if the latch-up condition occurs before completing 5times, this
test must be stopped immediately.
VDD
VSS
DUT
VIN
+
-
SW
1 2
C
200pF
V
A
Test
terminal
Protection Resistance
VDD
(Max.Rating)
Reference
terminalMB85RS128B
20 DS501-00020-2v0-E
■ REFLOW CONDITIONS AND FLOOR LIFE
Reflow Profile
Item Condition
Method IR (infrared reflow) , Convection
Times 2
Floor life
Before unpacking Please use within 2 years after production.
From unpacking to 2nd reflow Within 8 days
In case over period of floor life
Baking with 125 °C+/-3 °C for
24hrs+2hrs/-0hrs is required.
Then please use within 8 days.
(Please remember baking is up to 2 times)
Floor life condition Between 5 °C and 30 °C and also below 70%RH required.
(It is preferred lower humidity in the required temp range.)
260°C
(e)
(d')
(d)
255°C
170 °C
190 °C
RT (b)
(a)
(c)
to
Note : Temperature on the top of the package body is measured.
(a) Average ramp-up rate : 1 °C/s to 4 °C/s
(b) Preheat & Soak : 170 °C to 190 °C, 60 s to 180 s
(c) Average ramp-up rate : 1 °C/s to 4 °C/s
(d) Peak temperature : Temperature 260 °C Max; 255 °C within 10 s
(d’) Liquidous temperature : Up to 230 °C within 40 s or
Up to 225 °C within 60 s or
Up to 220 °C within 80 s
(e) Cooling : Natural cooling or forced cooling
Liquidous
TemperatureMB85RS128B
DS501-00020-2v0-E 21
■ RESTRICTED SUBSTANCES
This product complies with the regulations below (Based on current knowledge as of November 2011).
• EU RoHS Directive (2002/95/EC)
• China RoHS (Administration on the Control of Pollution Caused by Electronic Information Products
( ))
• Vietnam RoHS (30/2011/TT-BCT)
Restricted substances in each regulation are as follows.
* : The mark of “❍” shows below a threshold value.
Substances Threshold Contain status*
Lead and its compounds 1,000 ppm ❍
Mercury and its compounds 1,000 ppm ❍
Cadmium and its compounds 100 ppm ❍
Hexavalent chromium compound 1,000 ppm ❍
Polybrominated biphenyls (PBB) 1,000 ppm ❍
Polybrominated diphenyl ethers (PBDE) 1,000 ppm ❍MB85RS128B
22 DS501-00020-2v0-E
■ ORDERING INFORMATION
Part number Package Shipping form Minimum shipping
quantity
MB85RS128BPNF-G-JNE1 8-pin plastic SOP
(FPT-8P-M02) Tube 1
MB85RS128BPNF-G-JNERE1 8-pin plastic SOP
(FPT-8P-M02) Embossed Carrier tape 1500MB85RS128B
DS501-00020-2v0-E 23
■ PACKAGE DIMENSION
Please check the latest package dimension at the following URL.
http://edevice.fujitsu.com/package/en-search/
8-pin plastic SOP Lead pitch 1.27 mm
Package width ×
package length 3.9 mm × 5.05 mm
Lead shape Gullwing
Sealing method Plastic mold
Mounting height 1.75 mm MAX
Weight 0.06 g
8-pin plastic SOP
(FPT-8P-M02)
(FPT-8P-M02)
C
1.27(.050)
3.90±0.30 6.00±0.20
.199 –.008
+.010
–0.20
+0.25 5.05
0.13(.005) M
(.154±.012) (.236±.008)
0.10(.004)
1 4
8 5
0.44±0.08
(.017±.003)
–0.07
+0.03 0.22
.009 +.001
–.003
45°
0.40(.016)
"A" 0~8°
0.25(.010)
(Mounting height)
Details of "A" part
1.55±0.20
(.061±.008)
0.50±0.20
(.020±.008)
0.60±0.15
(.024±.006)
0.15±0.10
(.006±.004)
(Stand off)
0.10(.004)
*1
*2
2002-2012 FUJITSU SEMICONDUCTOR LIMITED F08004S-c-5-10
Dimensions in mm (inches).
Note: The values in parentheses are reference values.
Note 1) 1 : These dimensions include resin protrusion.
Note 2) 2 : These dimensions do not include resin protrusion.
Note 3) Pins width and pins thickness include plating thickness.
Note 4) Pins width do not include tie bar cutting remainder.
*
*MB85RS128B
24 DS501-00020-2v0-E
■ MARKING
RS128B
E11150
300
[MB85RS128BPNF-G-JNE1]
[MB85RS128BPNF-G-JNERE1]
[FPT-8P-M02]MB85RS128B
DS501-00020-2v0-E 25
■ PACKING INFORMATION
1. Tube
1.1 Tube Dimensions
• Tube/stopper shape
Tube cross-sections and Maximum quantity
Package form Package code
Maximum quantity
pcs/
tube
pcs/inner
box
pcs/outer
box
SOP, 8, plastic (2)
t = 0.5
Transparent polyethylene terephthalate
FPT-8P-M02 95 7600 30400
(Dimensions in mm)
(treated to antistatic)
Tube length: 520 mm
(treated to antistatic)
Stopper
Tube
Transparent polyethylene terephthalate
4.4
6.4
7.4
1.8
C 2006 FUJITSU LIMITED F08008-SET1-PET:FJ99L-0022-E0008-1-K-1 2.6
©2006-2010 FUJITSU SEMICONDUCTOR LIMITED
F08008-SET1-PET:FJ99L-0022-E0008-1-K-3MB85RS128B
26 DS501-00020-2v0-E
1.2 Tube Dry pack packing specifications
*1: For a product of witch part number is suffixed with “E1”, a “ ” marks is display to the moisture barrier
bag and the inner boxes.
*2: The space in the outer box will be filled with empty inner boxes, or cushions, etc.
*3: Please refer to an attached sheet about the indication label.
Note: The packing specifications may not be applied when the product is delivered via a distributer.
Tube
Dry pack
Inner box
Outer box
For SOP
Stopper
Aluminum Iaminated bag
Index mark
Desiccant
Label I *1*3
Heat seal
Aluminum Iaminated bag
(tubes inside)
Cushioning material
Inner box
Label I *1*3
Cushioning material
Humidity indicater
Outer box*2
Label II-A *3
Label II-B *3
IC
Use adhesive tapes.
G PbMB85RS128B
DS501-00020-2v0-E 27
1.3 Product label indicators
Label I: Label on Inner box/Moisture Barrier Bag/ (It sticks it on the reel for the emboss taping)
[C-3 Label (50mm × 100mm) Supplemental Label (20mm × 100mm)]
Label II-A: Label on Outer box [D Label] (100mm × 100mm)
Label II-B: Outer boxes product indicate
Note: Depending on shipment state, “Label II-A” and “Label II-B” on the external boxes might not be printed.
(Customer part number or FJ part number)
(Customer part number or FJ part number)
(FJ control number bar code)
XX/XX XXXX-XXX XXX
XXXX-XXX XXX
(Lot Number and quantity)
(Package count)
(Customer part number or FJ part number
bar code)
(Part number and quantity)
(FJ control number)
QC PASS
XXXXXXXXXXXXXX
XXXX/XX/XX (Packed years/month/day) ASSEMBLED IN xxxx
(3N)1 XXXXXXXXXXXXXX XXX
(Quantity)
(3N)2 XXXXXXXXXX
XXX pcs
XXXXXX
XXXXXXXXXXXXXX
XXXXXXXXXXXXXX (Customer part number or FJ part number)
XXXXXXXXXXXXXX (Comment)
XXXXXXXXXX (FJ control number )
(LEAD FREE mark)
C-3 Label
Supplemental Label
Perforated line
XXXXXXXXXXXXX (Customer Name)
(CUST.)
XXX (FJ control number)
XXX (FJ control number)
XXX (FJ control number)
XXXXXXXXXXXXXX
(Part number)
(FJ control number + Product quantity)
(FJ control number + Product quantity
bar code)
(Part number + Product quantity bar code)
XXXXXXXXX (Delivery Address)
(DELIVERY POINT)
XXXXXXXXXXXXXX
(TRANS.NO.) (FJ control number)
XXXXXXXXXXXXXX
(PART NO.) (Customer part number or
FJ part number)
XXX/XXX
(Q’TY/TOTAL Q’TY)
XX
(UNIT)
(CUSTOMER'S
REMARKS)
XXXXXXXXXXXXXXXXXXXX
(PACKAGE COUNT)
XXX/XXX
(PART NAME) XXXXXXXXXXXXXX (Part number)
(3N)3 XXXXXXXXXXXXXX XXX
(3N)4 XXXXXXXXXXXXXX XXX (Part number + Product quantity)
(FJ control number)
(FJ control number bar code)
(3N)5 XXXXXXXXXX
D Label
XXXXXXXXXXXXXX (Part number)
(Lot Number)
XXXX-XXX
XXXX-XXX
(Count) (Quantity)
X XXX
X XXX
XXXMB85RS128B
28 DS501-00020-2v0-E
1.4 Dimensions for Containers
(1) Dimensions for inner box
(2) Dimensions for outer box
LWH
540 125 75
(Dimensions in mm)
LWH
565 270 180
(Dimensions in mm)
L W
H
L
W
HMB85RS128B
DS501-00020-2v0-E 29
2. Emboss Tape
2.1 Tape Dimensions
PKG code Reel No
Maximum storage capacity
pcs/reel pcs/inner box pcs/outer box
FPT-8P-M02 3 1500 1500 10500
(Dimensions in mm)
Material : Conductive polystyrene
Heat proof temperature : No heat resistance.
Package should not be baked
by using tape and reel.
C 2012 FUJITSU SEMICONDUCTOR LIMITED SOL8-EMBOSSTAPE9 : NFME-EMB-X0084-1-P-1
8±0.1
6.4±0.1
3.9±0.2
4±0.1
5.5±0.05
5.5±0.1
2.1±0.1
0.4
1.75±0.1
0.3±0.05
2±0.05
+0.1 ø1.5 –0
+0.1 ø1.5 –0
+0.3 –0.1 12
B
A B A
SEC.A-A
SEC.B-BMB85RS128B
30 DS501-00020-2v0-E
2.2 IC orientation
2.3 Reel dimensions
Dimensions in mm
Reel No 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15
Tape width
Symbol 8 12 16 24 32 44 56 12 16 24
A 254 ± 2 254 ± 2 330 ± 2 254 ± 2 330 ± 2 254 ± 2 330 ± 2 330 ± 2
B 100 100 150 100 150 100 100 ± 2
C 13 ± 0.2 13
D 21 ± 0.8 20.5
E 2 ± 0.5
W1 8.4 12.4 16.4 24.4 32.4 44.4 56.4 12.4 16.4 24.4
W2 less than
14.4 less than 18.4 less than 22.4 less than 30.4 less than 38.4 less than 50.4 less than
62.4
less than
18.4
less than
22.4
less than
30.4
W3 7.9 ~ 10.9 11.9 ~ 15.4 15.9 ~ 19.4 23.9 ~ 27.4 31.9 ~ 35.4 43.9 ~ 47.4 55.9 ~
59.4
12.4 ~
14.4
16.4 ~
18.4
24.4 ~
26.4
r 1.0
(User Direction of Feed) (User Direction of Feed)
• ER type Index mark
(Reel side)
∗
∗: Hub unit width dimensions
Reel cutout dimensions
W1
W2 r
E
W3
B
A
C
D
+2
-0 +2
-0 +2
-0 +2
-0 +2
-0 +2
-0
+0.5
-0.2
+1
-0.2
+2
-0 +2
-0 +2
-0 +2
-0 +2
-0 +2
-0 +2
-0 +1
-0 +1
-0 +0.1
-0MB85RS128B
DS501-00020-2v0-E 31
2.4 Taping (φ330mm Reel) Dry Pack Packing Specifications
*1: For a product of witch part number is suffixed with “E1”, a “ ” marks is display to the moisture barrier
bag and the inner boxes.
*2: The size of the outer box may be changed depending on the quantity of inner boxes.
*3: The space in the outer box will be filled with empty inner boxes, or cushions, etc.
*4: Please refer to an attached sheet about the indication label.
Note: The packing specifications may not be applied when the product is delivered via a distributer.
Embossed
tapes
Dry pack
Inner box
Outer box
Outside diameter: 330mm reel
Heat seal
Label I *1, *4
Label II-B Label II-A *4 *4
Label I *1, *4
Label I *1, *4
Taping
Use adhesive tapes.
Outer box *2, *3
φ
Inner box
Label I *1, *4
Desiccant
Humidity indicator
Aluminum laminated bag
G PbMB85RS128B
32 DS501-00020-2v0-E
2.5 Product label indicators
Label I: Label on Inner box/Moisture Barrier Bag/ (It sticks it on the reel for the emboss taping)
[C-3 Label (50mm × 100mm) Supplemental Label (20mm × 100mm)]
Label II-A: Label on Outer box [D Label] (100mm × 100mm)
Label II-B: Outer boxes product indicate
Note: Depending on shipment state, “Label II-A” and “Label II-B” on the external boxes might not be printed.
(Customer part number or FJ part number)
(Customer part number or FJ part number)
(FJ control number bar code)
XX/XX XXXX-XXX XXX
XXXX-XXX XXX
(Lot Number and quantity)
(Package count)
(Customer part number or FJ part number
bar code)
(Part number and quantity)
(FJ control number)
QC PASS
XXXXXXXXXXXXXX
XXXX/XX/XX (Packed years/month/day) ASSEMBLED IN xxxx
(3N)1 XXXXXXXXXXXXXX XXX
(Quantity)
(3N)2 XXXXXXXXXX
XXX pcs
XXXXXX
XXXXXXXXXXXXXX
XXXXXXXXXXXXXX (Customer part number or FJ part number)
XXXXXXXXXXXXXX (Comment)
XXXXXXXXXX (FJ control number )
(LEAD FREE mark)
C-3 Label
Supplemental Label
Perforated line
XXXXXXXXXXXXX (Customer Name)
(CUST.)
XXX (FJ control number)
XXX (FJ control number)
XXX (FJ control number)
XXXXXXXXXXXXXX
(Part number)
(FJ control number + Product quantity)
(FJ control number + Product quantity
bar code)
(Part number + Product quantity bar code)
XXXXXXXXX (Delivery Address)
(DELIVERY POINT)
XXXXXXXXXXXXXX
(TRANS.NO.) (FJ control number)
XXXXXXXXXXXXXX
(PART NO.) (Customer part number or
FJ part number)
XXX/XXX
(Q’TY/TOTAL Q’TY)
XX
(UNIT)
(CUSTOMER'S
REMARKS)
XXXXXXXXXXXXXXXXXXXX
(PACKAGE COUNT)
XXX/XXX
(PART NAME) XXXXXXXXXXXXXX (Part number)
(3N)3 XXXXXXXXXXXXXX XXX
(3N)4 XXXXXXXXXXXXXX XXX (Part number + Product quantity)
(FJ control number)
(FJ control number bar code)
(3N)5 XXXXXXXXXX
D Label
XXXXXXXXXXXXXX (Part number)
(Lot Number)
XXXX-XXX
XXXX-XXX
(Count) (Quantity)
X XXX
X XXX
XXXMB85RS128B
DS501-00020-2v0-E 33
2.6 Dimensions for Containers
(1) Dimensions for inner box
(2) Dimensions for outer box
Tape width L W H
12, 16
365 345
40
24, 32 50
44 65
56 75
(Dimensions in mm)
LWH
415 400 315
(Dimensions in mm)
L
W
H
L
W
HMB85RS128B
34 DS501-00020-2v0-E
■ MAJOR CHANGES IN THIS EDITION
A change on a page is indicated by a vertical line drawn on the left side of that page.
Page Section Change Results
1
■ FEATURES Revised the Data retention
10 years ( + 85 °C)
→10 years ( + 85 °C), 95 years ( + 55 °C),
over 200 years ( + 35 °C)
17
■ POWER ON/OFF SEQUENCE Revised the following description:
“VDD pin is required to be rising from 0 V because turning the
power on from an intermediate level may cause malfunctions,
when the power is turned on.”
→ “If VDD falls down below 2.0 V, VDD is required to be started
from 1.0 V or less to prevent malfunctions when the power is
turned on again (see the figure below).”
Moved the following description under the table:
“If the device does not operate within the specified conditions of
read cycle, write cycle or power on/off sequence, memory data
can not be guaranteed.”
■ FRAM CHARACTERISTICS Revised the table and NoteMB85RS128B
DS501-00020-2v0-E 35
MEMOMB85RS128B
FUJITSU SEMICONDUCTOR LIMITED
Nomura Fudosan Shin-yokohama Bldg. 10-23, Shin-yokohama 2-Chome,
Kohoku-ku Yokohama Kanagawa 222-0033, Japan
Tel: +81-45-415-5858
http://jp.fujitsu.com/fsl/en/
For further information please contact:
North and South America
FUJITSU SEMICONDUCTOR AMERICA, INC.
1250 E. Arques Avenue, M/S 333
Sunnyvale, CA 94085-5401, U.S.A.
Tel: +1-408-737-5600 Fax: +1-408-737-5999
http://us.fujitsu.com/micro/
Europe
FUJITSU SEMICONDUCTOR EUROPE GmbH
Pittlerstrasse 47, 63225 Langen, Germany
Tel: +49-6103-690-0 Fax: +49-6103-690-122
http://emea.fujitsu.com/semiconductor/
Korea
FUJITSU SEMICONDUCTOR KOREA LTD.
902 Kosmo Tower Building, 1002 Daechi-Dong,
Gangnam-Gu, Seoul 135-280, Republic of Korea
Tel: +82-2-3484-7100 Fax: +82-2-3484-7111
http://kr.fujitsu.com/fsk/
Asia Pacific
FUJITSU SEMICONDUCTOR ASIA PTE. LTD.
151 Lorong Chuan,
#05-08 New Tech Park 556741 Singapore
Tel : +65-6281-0770 Fax : +65-6281-0220
http://sg.fujitsu.com/semiconductor/
FUJITSU SEMICONDUCTOR SHANGHAI CO., LTD.
30F, Kerry Parkside, 1155 Fang Dian Road, Pudong District,
Shanghai 201204, China
Tel : +86-21-6146-3688 Fax : +86-21-6146-3660
http://cn.fujitsu.com/fss/
FUJITSU SEMICONDUCTOR PACIFIC ASIA LTD.
2/F, Green 18 Building, Hong Kong Science Park,
Shatin, N.T., Hong Kong
Tel : +852-2736-3232 Fax : +852-2314-4207
http://cn.fujitsu.com/fsp/
Specifications are subject to change without notice. For further information please contact each office.
All Rights Reserved.
The contents of this document are subject to change without notice.
Customers are advised to consult with sales representatives before ordering.
The information, such as descriptions of function and application circuit examples, in this document are presented solely for the purpose
of reference to show examples of operations and uses of FUJITSU SEMICONDUCTOR device; FUJITSU SEMICONDUCTOR does
not warrant proper operation of the device with respect to use based on such information. When you develop equipment incorporating
the device based on such information, you must assume any responsibility arising out of such use of the information.
FUJITSU SEMICONDUCTOR assumes no liability for any damages whatsoever arising out of the use of the information.
Any information in this document, including descriptions of function and schematic diagrams, shall not be construed as license of the use
or exercise of any intellectual property right, such as patent right or copyright, or any other right of FUJITSU SEMICONDUCTOR or any
third party or does FUJITSU SEMICONDUCTOR warrant non-infringement of any third-party's intellectual property right or other right
by using such information. FUJITSU SEMICONDUCTOR assumes no liability for any infringement of the intellectual property rights or
other rights of third parties which would result from the use of information contained herein.
The products described in this document are designed, developed and manufactured as contemplated for general use, including without
limitation, ordinary industrial use, general office use, personal use, and household use, but are not designed, developed and manufactured
as contemplated (1) for use accompanying fatal risks or dangers that, unless extremely high safety is secured, could have a serious effect
to the public, and could lead directly to death, personal injury, severe physical damage or other loss (i.e., nuclear reaction control in
nuclear facility, aircraft flight control, air traffic control, mass transport control, medical life support system, missile launch control in
weapon system), or (2) for use requiring extremely high reliability (i.e., submersible repeater and artificial satellite).
Please note that FUJITSU SEMICONDUCTOR will not be liable against you and/or any third party for any claims or damages arising
in connection with above-mentioned uses of the products.
Any semiconductor devices have an inherent chance of failure. You must protect against injury, damage or loss from such failures
by incorporating safety design measures into your facility and equipment such as redundancy, fire protection, and prevention of overcurrent
levels and other abnormal operating conditions.
Exportation/release of any products described in this document may require necessary procedures in accordance with the regulations
of the Foreign Exchange and Foreign Trade Control Law of Japan and/or US export control laws.
The company names and brand names herein are the trademarks or registered trademarks of their respective owners.
Edited: Sales Promotion Department
1. Product profile
1.1 General description
Standard level N-channel MOSFET in LFPAK package qualified to 175 °C. This product is
designed and qualified for use in a wide range of industrial, communications and domestic
equipment.
1.2 Features and benefits
Advanced TrenchMOS provides low
RDSon and low gate charge
High efficiency gains in switching
power converters
Improved mechanical and thermal
characteristics
LFPAK provides maximum power
density in a Power SO8 package
1.3 Applications
DC-to-DC converters
Lithium-ion battery protection
Load switching
Motor control
Server power supplies
1.4 Quick reference data
PSMN011-80YS
N-channel LFPAK 80 V 11 mΩ standard level MOSFET
Rev. 02 — 28 October 2010 Product data sheet
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C - - 80 V
ID drain current Tmb = 25 °C; VGS = 10 V;
see Figure 1
- - 67 A
Ptot total power dissipation Tmb = 25 °C; see Figure 2 - - 117 W
Tj junction temperature -55 - 175 °C
Static characteristics
RDSon drain-source on-state
resistance
VGS = 10 V; ID = 25 A;
Tj = 100 °C; see Figure 12
- - 18 mΩ
VGS = 10 V; ID = 25 A;
Tj = 25 °C; see Figure 12;
see Figure 13
- 8.6 11 mΩPSMN011-80YS All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 02 — 28 October 2010 2 of 15
NXP Semiconductors PSMN011-80YS
N-channel LFPAK 80 V 11 mΩ standard level MOSFET
2. Pinning information
3. Ordering information
Dynamic characteristics
QGD gate-drain charge VGS = 10 V; ID = 25 A;
VDS = 40 V; see Figure 14;
see Figure 15
- 11 - nC
QG(tot) total gate charge - 45 - nC
Avalanche ruggedness
EDS(AL)S non-repetitive
drain-source avalanche
energy
VGS = 10 V; Tj(init) = 25 °C;
ID = 67 A; Vsup ≤ 80 V;
RGS = 50 Ω; unclamped
- - 121 mJ
Table 1. Quick reference data …continued
Symbol Parameter Conditions Min Typ Max Unit
Table 2. Pinning information
Pin Symbol Description Simplified outline Graphic symbol
1 S source
SOT669 (LFPAK)
2 S source
3 S source
4 G gate
mb D mounting base; connected to
drain
mb
1234
S
D
G
mbb076
Table 3. Ordering information
Type number Package
Name Description Version
PSMN011-80YS LFPAK plastic single-ended surface-mounted package (LFPAK); 4 leads SOT669PSMN011-80YS All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 02 — 28 October 2010 3 of 15
NXP Semiconductors PSMN011-80YS
N-channel LFPAK 80 V 11 mΩ standard level MOSFET
4. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C - 80 V
VDGR drain-gate voltage Tj ≥ 25 °C; Tj ≤ 175 °C; RGS = 20 kΩ - 80 V
VGS gate-source voltage -20 20 V
ID drain current VGS = 10 V; Tmb = 100 °C; see Figure 1 - 47 A
VGS = 10 V; Tmb = 25 °C; see Figure 1 - 67 A
IDM peak drain current pulsed; tp ≤ 10 µs; Tmb = 25 °C; see Figure 3 - 266 A
Ptot total power dissipation Tmb = 25 °C; see Figure 2 - 117 W
Tstg storage temperature -55 175 °C
Tj junction temperature -55 175 °C
Tsld(M) peak soldering temperature - 260 °C
Source-drain diode
IS source current Tmb = 25 °C - 67 A
ISM peak source current pulsed; tp ≤ 10 µs; Tmb = 25 °C - 266 A
Avalanche ruggedness
EDS(AL)S non-repetitive drain-source
avalanche energy
VGS = 10 V; Tj(init) = 25 °C; ID = 67 A;
Vsup ≤ 80 V; RGS = 50 Ω; unclamped
- 121 mJ
Fig 1. Continuous drain current as a function of
mounting base temperature
Fig 2. Normalized total power dissipation as a
function of mounting base temperature
003aad341
0
20
40
60
80
0 50 100 150 200
Tmb (°C)
ID
(A)
Tmb (°C)
0 200 50 100 150
03aa16
40
80
120
Pder
(%)
0PSMN011-80YS All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 02 — 28 October 2010 4 of 15
NXP Semiconductors PSMN011-80YS
N-channel LFPAK 80 V 11 mΩ standard level MOSFET
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
003aad343
10-1
1
10
102
103
1 10 102 103
VDS (V)
ID
(A)
DC
100 ms
10 ms
1 ms
100 μs
10 μs
Limit RDSon = VDS / IDPSMN011-80YS All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 02 — 28 October 2010 5 of 15
NXP Semiconductors PSMN011-80YS
N-channel LFPAK 80 V 11 mΩ standard level MOSFET
5. Thermal characteristics
Table 5. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
Rth(j-mb) thermal resistance from junction to
mounting base
see Figure 4 - 0.5 1.3 K/W
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration; typical
values
003aad342
single shot
0.2
0.1
0.05
0.02
10−3
10−2
10−1
1
1−6 10−5 10−4 10−3 10−2 10−1 1 tp (s)
Zth (j-mb)
(K/W) δ = 0.5PSMN011-80YS All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 02 — 28 October 2010 6 of 15
NXP Semiconductors PSMN011-80YS
N-channel LFPAK 80 V 11 mΩ standard level MOSFET
6. Characteristics
Table 6. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
V(BR)DSS drain-source breakdown
voltage
ID = 250 µA; VGS = 0 V; Tj = -55 °C 73 - - V
ID = 250 µA; VGS = 0 V; Tj = 25 °C 80 - - V
VGS(th) gate-source threshold voltage ID = 1 mA; VDS = VGS; Tj = 175 °C;
see Figure 10
1- - V
ID = 1 mA; VDS = VGS; Tj = -55 °C;
see Figure 10
- - 4.6 V
ID = 1 mA; VDS = VGS; Tj = 25 °C;
see Figure 11; see Figure 10
234V
IDSS drain leakage current VDS = 80 V; VGS = 0 V; Tj = 25 °C - 0.02 1 µA
VDS = 80 V; VGS = 0 V; Tj = 125 °C - - 100 µA
IGSS gate leakage current VGS = -20 V; VDS = 0 V; Tj = 25 °C - - 100 nA
VGS = 20 V; VDS = 0 V; Tj = 25 °C - - 100 nA
RDSon drain-source on-state
resistance
VGS = 10 V; ID = 25 A; Tj = 175 °C;
see Figure 12
- 19 26 mΩ
VGS = 10 V; ID = 25 A; Tj = 100 °C;
see Figure 12
- - 18 mΩ
VGS = 10 V; ID = 25 A; Tj = 25 °C;
see Figure 12; see Figure 13
- 8.6 11 mΩ
RG internal gate resistance (AC) f = 1 MHz - 0.7 - Ω
Dynamic characteristics
QG(tot) total gate charge ID = 0 A; VDS = 0 V; VGS = 10 V - 38 - nC
ID = 25 A; VDS = 40 V; VGS = 10 V;
see Figure 14; see Figure 15
- 45 - nC
QGS gate-source charge - 13 - nC
QGS(th) pre-threshold gate-source
charge
ID = 25 A; VDS = 40 V; VGS = 10 V;
see Figure 14
- 8 - nC
QGS(th-pl) post-threshold gate-source
charge
- 5 - nC
QGD gate-drain charge ID = 25 A; VDS = 40 V; VGS = 10 V;
see Figure 14; see Figure 15
- 11 - nC
VGS(pl) gate-source plateau voltage ID = 25 A; VDS = 40 V; see Figure 14;
see Figure 15
- 4.9 - V
Ciss input capacitance VDS = 40 V; VGS = 0 V; f = 1 MHz;
Tj = 25 °C; see Figure 16
- 2800 - pF
Coss output capacitance - 270 - pF
Crss reverse transfer capacitance - 146 - pF
td(on) turn-on delay time VDS = 40 V; RL = 1.6 Ω; VGS = 10 V;
RG(ext) = 4.7 Ω
- 23 - ns
tr rise time - 20 - ns
td(off) turn-off delay time - 40 - ns
tf fall time - 12 - nsPSMN011-80YS All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 02 — 28 October 2010 7 of 15
NXP Semiconductors PSMN011-80YS
N-channel LFPAK 80 V 11 mΩ standard level MOSFET
Source-drain diode
VSD source-drain voltage IS = 25 A; VGS = 0 V; Tj = 25 °C;
see Figure 17
- 0.8 1.2 V
trr reverse recovery time IS = 40 A; dIS/dt = 100 A/µs;
VGS = 0 V; VDS = 40 V
- 54 - ns
Qr recovered charge - 98 - nC
Table 6. Characteristics …continued
Symbol Parameter Conditions Min Typ Max Unit
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values
Fig 6. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
Fig 7. Forward transconductance as a function of
drain current; typical values
Fig 8. Input and reverse transfer capacitances as a
function of gate-source voltage; typical values
003aad311
0
20
40
60
80
100
0123 VDS (V)
ID
(A)
8 10
20
5.5
5
6
VGS (V) = 4.5
003aad333
0
20
40
60
80
100
0246
VGS (V)
ID
(A)
Tj
= 175 °C
Tj
= 25 °C
003aad338
0
20
40
60
80
100
0 20 40 60 80 100
ID (A)
gfs
(S)
003aad337
1000
1500
2000
2500
3000
3500
4000
0 5 10 15 20 25
VGS (V)
C
(pF)
Ciss
CrssPSMN011-80YS All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 02 — 28 October 2010 8 of 15
NXP Semiconductors PSMN011-80YS
N-channel LFPAK 80 V 11 mΩ standard level MOSFET
Fig 9. Drain-source on-state resistance as a function
of gate-source voltage; typical values
Fig 10. Gate-source threshold voltage as a function of
junction temperature
Fig 11. Sub-threshold drain current as a function of
gate-source voltage
Fig 12. Normalized drain-source on-state resistance
factor as a function of junction temperature
003aad339
5
10
15
20
25
30
4 8 12 16 20
VGS (V)
RDSon
(mΩ)
Tj
(°C)
−60 180 0 60 120
003aad280
2
3
1
4
5
VGS(th)
(V)
0
max
typ
min
03aa35
VGS (V)
0 6 2 4
10−4
10−5
10−2
10−3
10−1
ID
(A)
10−6
min typ max
003aae090
0
0.6
1.2
1.8
2.4
3
-60 0 60 120 180
Tj
(°C)
aPSMN011-80YS All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 02 — 28 October 2010 9 of 15
NXP Semiconductors PSMN011-80YS
N-channel LFPAK 80 V 11 mΩ standard level MOSFET
Fig 13. Drain-source on-state resistance as a function
of drain current; typical values
Fig 14. Gate charge waveform definitions
Fig 15. Gate-source voltage as a function of gate
charge; typical values
Fig 16. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
003aad312
5
8
11
14
17
20
0 20 40 60 80 100
ID (A)
RDSon
(mΩ)
8
5.5
20
6
10
VGS (V) = 5
003aaa508
VGS
VGS(th)
QGS1 QGS2
QGD
VDS
QG(tot)
ID
QGS
VGS(pl)
003aad335
0
2
4
6
8
10
0 10 20 30 40 50
QG (nC)
VGS
(V)
VDS = 40V
64V
16V
003aad336
102
103
104
10-1 1 10 102
VDS (V)
C
(pF)
Ciss
Crss
CossPSMN011-80YS All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 02 — 28 October 2010 10 of 15
NXP Semiconductors PSMN011-80YS
N-channel LFPAK 80 V 11 mΩ standard level MOSFET
Fig 17. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values
003aad334
0
20
40
60
80
100
0 0.3 0.6 0.9 1.2
VSD (V)
IS
(A)
Tj
= 25 °C
Tj
= 175 °CPSMN011-80YS All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 02 — 28 October 2010 11 of 15
NXP Semiconductors PSMN011-80YS
N-channel LFPAK 80 V 11 mΩ standard level MOSFET
7. Package outline
Fig 18. Package outline SOT669 (LFPAK)
REFERENCES OUTLINE
VERSION
EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC JEITA
SOT669 MO-235 04-10-13
06-03-16
0 2.5 5 mm
scale
e
E1
b
c2
A2
UNIT A A2 b c e
DIMENSIONS (mm are the original dimensions)
mm 1.10
0.95
A1 A3
0.15
0.00
1.20
1.01
0.50
0.35
b2
4.41
3.62
b3
2.2
2.0
b4
0.9
0.7
0.25
0.19
c2
0.30
0.24
4.10
3.80
6.2
5.8
H
1.3
0.8
L2
0.85
0.40
L
1.3
0.8
L1
8°
0°
D w y (1)
5.0
4.8
E(1)
3.3
3.1
E1
D1 (1) (1)
max
0.25 4.20 1.27 0.25 0.1
1 2 34
mounting
base
D1
c
Plastic single-ended surface-mounted package (LFPAK); 4 leads SOT669
E
b2
b3
b4
H D
L2
L1
A
w M A
C
C
X
1/2 e
y C
θ
θ
(A ) 3
L
A
A1
detail X
Note
1. Plastic or metal protrusions of 0.15 mm maximum per side are not included. PSMN011-80YS All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 02 — 28 October 2010 12 of 15
NXP Semiconductors PSMN011-80YS
N-channel LFPAK 80 V 11 mΩ standard level MOSFET
8. Revision history
Table 7. Revision history
Document ID Release date Data sheet status Change notice Supersedes
PSMN011-80YS v.2 20101028 Product data sheet - PSMN011-80YS v.1
Modifications: • Status changed from objective to product.
• Various changes to content.
PSMN011-80YS v.1 20100226 Objective data sheet - -PSMN011-80YS All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 02 — 28 October 2010 13 of 15
NXP Semiconductors PSMN011-80YS
N-channel LFPAK 80 V 11 mΩ standard level MOSFET
9. Legal information
9.1 Data sheet status
[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term 'short data sheet' is explained in section "Definitions".
[3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product
status information is available on the Internet at URL http://www.nxp.com.
9.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to offer functions and qualities beyond those described in the
Product data sheet.
9.3 Disclaimers
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information.
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and operation of their applications
and products using NXP Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or customer product
design. It is customer’s sole responsibility to determine whether the NXP
Semiconductors product is suitable and fit for the customer’s applications and
products planned, as well as for the planned application and use of
customer’s third party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks associated with their
applications and products.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
third party customer(s). Customer is responsible for doing all necessary
testing for the customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications and
the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
Document status[1][2] Product status[3] Definition
Objective [short] data sheet Development This document contains data from the objective specification for product development.
Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.
Product [short] data sheet Production This document contains the product specification.PSMN011-80YS All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 02 — 28 October 2010 14 of 15
NXP Semiconductors PSMN011-80YS
N-channel LFPAK 80 V 11 mΩ standard level MOSFET
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein may
be subject to export control regulations. Export might require a prior
authorization from national authorities.
Non-automotive qualified products — Unless this data sheet expressly
states that this specific NXP Semiconductors product is automotive qualified,
the product is not suitable for automotive use. It is neither qualified nor tested
in accordance with automotive testing or application requirements. NXP
Semiconductors accepts no liability for inclusion and/or use of
non-automotive qualified products in automotive equipment or applications.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards, customer
(a) shall use the product without NXP Semiconductors’ warranty of the
product for such automotive applications, use and specifications, and (b)
whenever customer uses the product for automotive applications beyond
NXP Semiconductors’ specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies NXP Semiconductors for any
liability, damages or failed product claims resulting from customer design and
use of the product for automotive applications beyond NXP Semiconductors’
standard warranty and NXP Semiconductors’ product specifications.
9.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV,
FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE,
ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight, MoReUse,
QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug, TOPFET,
TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V.
HD Radio and HD Radio logo — are trademarks of iBiquity Digital
Corporation.
10. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.comNXP Semiconductors PSMN011-80YS
N-channel LFPAK 80 V 11 mΩ standard level MOSFET
© NXP B.V. 2010. All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 28 October 2010
Document identifier: PSMN011-80YS
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
11. Contents
1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1
1.1 General description . . . . . . . . . . . . . . . . . . . . . .1
1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . .1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1
1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . .1
2 Pinning information. . . . . . . . . . . . . . . . . . . . . . .2
3 Ordering information. . . . . . . . . . . . . . . . . . . . . .2
4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3
5 Thermal characteristics . . . . . . . . . . . . . . . . . . .5
6 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . .6
7 Package outline . . . . . . . . . . . . . . . . . . . . . . . . .11
8 Revision history. . . . . . . . . . . . . . . . . . . . . . . . .12
9 Legal information. . . . . . . . . . . . . . . . . . . . . . . .13
9.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . .13
9.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . .13
9.3 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . .13
9.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .14
10 Contact information. . . . . . . . . . . . . . . . . . . . . .14
1. Product profile
1.1 General description
Femtofarad bidirectional ElectroStatic Discharge (ESD) protection diode in a leadless
ultra small SOD882 Surface-Mounted Device (SMD) plastic package designed to protect
one signal line from the damage caused by ESD and other transients. The combination of
extremely low capacitance, high ESD maximum rating and ultra small package makes the
device ideal for high-speed data line protection and antenna protection applications.
1.2 Features and benefits
1.3 Applications
1.4 Quick reference data
PESD5V0F1BL
Femtofarad bidirectional ESD protection diode
Rev. 3 — 24 October 2011 Product data sheet
Bidirectional ESD protection of one line ESD protection up to 10 kV
Femtofarad capacitance: Cd = 400 fF IEC 61000-4-2; level 4 (ESD)
Low ESD clamping voltage: 30 V
at 30 ns and 8 kV
AEC-Q101 qualified
Very low leakage current: IRM < 1 nA
10/100/1000 Mbit/s Ethernet Portable electronics
FireWire Communication systems
High-speed data lines Computers and peripherals
Subscriber Identity Module (SIM) card
protection
Audio and video equipment
Cellular handsets and accessories Antenna protection
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
Per device
VRWM reverse standoff voltage - - 5.5 V
Cd diode capacitance f = 1 MHz; VR = 0 V - 0.4 0.55 pFPESD5V0F1BL All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 3 — 24 October 2011 2 of 12
NXP Semiconductors PESD5V0F1BL
Femtofarad bidirectional ESD protection diode
2. Pinning information
3. Ordering information
4. Marking
5. Limiting values
[1] Non-repetitive current pulse 8/20 s exponential decay waveform according to IEC 61000-4-5.
Table 2. Pinning
Pin Description Simplified outline Graphic symbol
1 cathode (diode 1)
2 cathode (diode 2) 21
Transparent
top view
sym045
1 2
Table 3. Ordering information
Type number Package
Name Description Version
PESD5V0F1BL - leadless ultra small plastic package; 2 terminals;
body 1.0 0.6 0.5 mm
SOD882
Table 4. Marking codes
Type number Marking code
PESD5V0F1BL ZZ
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
Per device
IPP peak pulse current tp = 8/20 s [1] - 2.5 A
Tj junction temperature - 125 C
Tamb ambient temperature 40 +125 C
Tstg storage temperature 55 +125 CPESD5V0F1BL All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 3 — 24 October 2011 3 of 12
NXP Semiconductors PESD5V0F1BL
Femtofarad bidirectional ESD protection diode
[1] Device stressed with ten non-repetitive ESD pulses.
Table 6. ESD maximum ratings
Tamb = 25 C unless otherwise specified.
Symbol Parameter Conditions Min Max Unit
Per device
VESD electrostatic discharge voltage IEC 61000-4-2
(contact discharge)
[1] - 10 kV
MIL-STD-883
(human body model)
- 10 kV
Table 7. ESD standards compliance
Standard Conditions
Per device
IEC 61000-4-2; level 4 (ESD) > 8 kV (contact)
MIL-STD-883; class 3 (human body model) > 4 kV
Fig 1. 8/20 s pulse waveform according to
IEC 61000-4-5
Fig 2. ESD pulse waveform according to
IEC 61000-4-2
t (μs)
0 40 10 20 30
001aaa630
40
80
120
IPP
(%)
0
e−t
100 % IPP; 8 μs
50 % IPP; 20 μs
001aaa631
IPP
100 %
90 %
t
30 ns
60 ns
10 %
tr = 0.7 ns to 1 nsPESD5V0F1BL All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 3 — 24 October 2011 4 of 12
NXP Semiconductors PESD5V0F1BL
Femtofarad bidirectional ESD protection diode
6. Characteristics
[1] Non-repetitive current pulse 8/20 s exponential decay waveform according to IEC 61000-4-5.
Table 8. Characteristics
Tamb = 25 C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
Per device
VRWM reverse standoff
voltage
- - 5.5 V
IRM reverse leakage current VRWM = 5 V - 1 100 nA
VBR breakdown voltage IR = 1 mA 6 8 10 V
Cd diode capacitance f = 1 MHz; VR = 0 V - 0.4 0.55 pF
VCL clamping voltage [1]
IPP =1A - - 11 V
IPP = 2.5 A - - 15 V
rdif differential resistance IR = 20 mA - - 30
f = 1 MHz; Tamb = 25 C
Fig 3. Diode capacitance as a function of reverse
voltage; typical values
Fig 4. V-I characteristics for a bidirectional
ESD protection diode
VR (V)
−6.0 −2.0 2.0 6.0
006aab598
0.3
0.4
0.5
Cd
(pF)
0.2
006aaa676
−VCL −VBR −VRWM
−IRM VRWM VBR VCL
IRM
−IR
IR
−IPP
IPP
− +PESD5V0F1BL All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 3 — 24 October 2011 5 of 12
NXP Semiconductors PESD5V0F1BL
Femtofarad bidirectional ESD protection diode
Fig 5. ESD clamping test setup and waveforms
006aab599
50 Ω
RZ
CZ
DUT
(DEVICE
UNDER
TEST)
GND
GND
450 Ω
RG 223/U
50 Ω coax
ESD TESTER
IEC 61000-4-2 network
CZ = 150 pF; RZ = 330 Ω
4 GHz DIGITAL
OSCILLOSCOPE
10×
ATTENUATOR
GND
GND
unclamped +8 kV ESD pulse waveform
(IEC 61000-4-2 network)
clamped +8 kV ESD pulse waveform
(IEC 61000-4-2 network) pin 1 to 2
unclamped −8 kV ESD pulse waveform
(IEC 61000-4-2 network)
clamped −8 kV ESD pulse waveform
(IEC 61000-4-2 network) pin 1 to 2
vertical scale = 2 kV/div
horizontal scale = 15 ns/div
vertical scale = 2 kV/div
horizontal scale = 15 ns/div
vertical scale = 50 V/div
horizontal scale = 15 ns/div
vertical scale = 50 V/div
horizontal scale = 15 ns/divPESD5V0F1BL All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 3 — 24 October 2011 6 of 12
NXP Semiconductors PESD5V0F1BL
Femtofarad bidirectional ESD protection diode
7. Application information
PESD5V0F1BL is designed for the protection of one bidirectional data or signal line from
the damage caused by ESD and surge pulses. The device may be used on lines where
the signal polarities are both, positive and negative with respect to ground.
Circuit board layout and protection device placement
Circuit board layout is critical for the suppression of ESD, Electrical Fast Transient (EFT)
and surge transients. The following guidelines are recommended:
1. Place the device as close to the input terminal or connector as possible.
2. The path length between the device and the protected line should be minimized.
3. Keep parallel signal paths to a minimum.
4. Avoid running protected conductors in parallel with unprotected conductors.
5. Minimize all Printed-Circuit Board (PCB) conductive loops including power and
ground loops.
6. Minimize the length of the transient return path to ground.
7. Avoid using shared transient return paths to a common ground point.
8. Ground planes should be used whenever possible. For multilayer PCBs, use ground
vias.
8. Test information
8.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
Fig 6. Application diagram
006aab600
PESD5V0F1BL
GND
GPS
ANTENNAPESD5V0F1BL All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 3 — 24 October 2011 7 of 12
NXP Semiconductors PESD5V0F1BL
Femtofarad bidirectional ESD protection diode
9. Package outline
10. Packing information
[1] For further information and the availability of packing methods, see Section 14.
This is a generic drawing for SOD882 package. This product has no cathode marking.
Fig 7. Package outline PESD5V0F1BL (SOD882)
Dimensions in mm 03-04-17
0.55
0.47
0.65
0.62
0.55
0.50
0.46
cathode marking on top side
1.02
0.95
0.30
0.22
0.30
0.22
2
1
Table 9. Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.[1]
Type number Package Description Packing quantity
10000
PESD5V0F1BL SOD882 2 mm pitch, 8 mm tape and reel -315PESD5V0F1BL All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 3 — 24 October 2011 8 of 12
NXP Semiconductors PESD5V0F1BL
Femtofarad bidirectional ESD protection diode
11. Soldering
Reflow soldering is the only recommended soldering method.
Fig 8. Reflow soldering footprint PESD5V0F1BL (SOD882)
solder lands
solder resist
occupied area
solder paste
sod882_fr
0.9
0.3
(2×)
R0.05 (8×)
0.6
(2×)
0.7
(2×)
0.4
(2×)
1.3
0.5
(2×)
0.8
(2×)
0.7
Dimensions in mmPESD5V0F1BL All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 3 — 24 October 2011 9 of 12
NXP Semiconductors PESD5V0F1BL
Femtofarad bidirectional ESD protection diode
12. Revision history
Table 10. Revision history
Document ID Release date Data sheet status Change notice Supersedes
PESD5V0F1BL v.3 20111024 Product data sheet - PESD5V0F1BL v.2
Modifications: • Figure 7 “Package outline PESD5V0F1BL (SOD882)”: updated.
• Section 13 “Legal information”: updated.
PESD5V0F1BL v.2 20110323 Product data sheet - PESD5V0F1BL v.1
PESD5V0F1BL v.1 20091001 Product data sheet - -PESD5V0F1BL All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 3 — 24 October 2011 10 of 12
NXP Semiconductors PESD5V0F1BL
Femtofarad bidirectional ESD protection diode
13. Legal information
13.1 Data sheet status
[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
13.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to offer functions and qualities beyond those described in the
Product data sheet.
13.3 Disclaimers
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information.
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and operation of their applications
and products using NXP Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or customer product
design. It is customer’s sole responsibility to determine whether the NXP
Semiconductors product is suitable and fit for the customer’s applications and
products planned, as well as for the planned application and use of
customer’s third party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks associated with their
applications and products.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
third party customer(s). Customer is responsible for doing all necessary
testing for the customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications and
the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
Document status[1][2] Product status[3] Definition
Objective [short] data sheet Development This document contains data from the objective specification for product development.
Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.
Product [short] data sheet Production This document contains the product specification. PESD5V0F1BL All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 3 — 24 October 2011 11 of 12
NXP Semiconductors PESD5V0F1BL
Femtofarad bidirectional ESD protection diode
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
13.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
14. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.comNXP Semiconductors PESD5V0F1BL
Femtofarad bidirectional ESD protection diode
© NXP B.V. 2011. All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 24 October 2011
Document identifier: PESD5V0F1BL
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
15. Contents
1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 General description . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . 1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . 1
2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2
4 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
6 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 4
7 Application information. . . . . . . . . . . . . . . . . . . 6
8 Test information. . . . . . . . . . . . . . . . . . . . . . . . . 6
8.1 Quality information . . . . . . . . . . . . . . . . . . . . . . 6
9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 7
10 Packing information . . . . . . . . . . . . . . . . . . . . . 7
11 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
12 Revision history. . . . . . . . . . . . . . . . . . . . . . . . . 9
13 Legal information. . . . . . . . . . . . . . . . . . . . . . . 10
13.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 10
13.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
13.3 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
13.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 11
14 Contact information. . . . . . . . . . . . . . . . . . . . . 11
15 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
1. Product profile
1.1 General description
500 mA PNP Resistor-Equipped Transistor (RET) in a small SOT23 (TO-236AB)
Surface-Mounted Device (SMD) plastic package.
NPN complement: PDTD123TT.
1.2 Features and benefits
1.3 Applications
1.4 Quick reference data
PDTB123TT
PNP 500 mA, 50 V resistor-equipped transistor;
R1 = 2.2 kΩ, R2 = open
Rev. 4 — 8 November 2010 Product data sheet
500 mA output current capability Reduces component count
Built-in bias resistor Reduces pick and place costs
Simplifies circuit design AEC-Q101 qualified
Digital application in automotive and
industrial segments
Cost-saving alternative for BC807 series
in digital applications
Control of IC inputs Switching loads
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
VCEO collector-emitter voltage open base - - −50 V
IO output current - - −500 mA
R1 bias resistor 1 (input) 1.54 2.2 2.86 kΩPDTB123TT All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 4 — 8 November 2010 2 of 10
NXP Semiconductors PDTB123TT
PNP 500 mA resistor-equipped transistor; R1 = 2.2 kΩ, R2 = open
2. Pinning information
3. Ordering information
4. Marking
[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
Table 2. Pinning
Pin Description Simplified outline Graphic symbol
1 input (base)
2 GND (emitter)
3 output (collector)
006aaa144
1 2
3
sym009
3
2
1 R1
Table 3. Ordering information
Type number Package
Name Description Version
PDTB123TT - plastic surface-mounted package; 3 leads SOT23
Table 4. Marking codes
Type number Marking code[1]
PDTB123TT *1UPDTB123TT All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 4 — 8 November 2010 3 of 10
NXP Semiconductors PDTB123TT
PNP 500 mA resistor-equipped transistor; R1 = 2.2 kΩ, R2 = open
5. Limiting values
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
6. Thermal characteristics
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VCBO collector-base voltage open emitter - −50 V
VCEO collector-emitter voltage open base - −50 V
VEBO emitter-base voltage open collector - −5 V
VI input voltage
positive - +5 V
negative - −12 V
IO output current - −500 mA
Ptot total power dissipation Tamb ≤ 25 °C [1] - 250 mW
Tj junction temperature - 150 °C
Tamb ambient temperature −65 +150 °C
Tstg storage temperature −65 +150 °C
Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
Rth(j-a) thermal resistance from
junction to ambient
in free air [1] - - 500 K/WPDTB123TT All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 4 — 8 November 2010 4 of 10
NXP Semiconductors PDTB123TT
PNP 500 mA resistor-equipped transistor; R1 = 2.2 kΩ, R2 = open
7. Characteristics
Table 7. Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
ICBO collector-base
cut-off current
VCB = −40 V; IE =0A - - −100 nA
VCB = −50 V; IE =0A - - −100 nA
ICEO collector-emitter
cut-off current
VCE = −50 V; IB =0A - - −0.5 μA
IEBO emitter-base
cut-off current
VEB = −5 V; IC =0A - - −100 nA
hFE DC current gain VCE = −5 V;
IC = −50 mA
100 250 -
VCEsat collector-emitter
saturation voltage
IC = −50 mA;
IB = −2.5 mA
- - −0.3 V
R1 bias resistor 1 (input) 1.54 2.2 2.86 kΩ
Cc collector capacitance VCB = −10 V;
IE = ie = 0 A;
f = 100 MHz
- 11 - pF
VCE = −5 V
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −40 °C
IC/IB = 20
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −40 °C
Fig 1. DC current gain as a function of collector
current; typical values
Fig 2. Collector-emitter saturation voltage as a
function of collector current; typical values
006aaa455
IC (mA)
−10−1 −103 −102 −1 −10
103
hFE
102
(2)
(3)
(1)
006aaa456
IC (mA) −10−1 −102 −1 −10
−10−1
VCEsat
(V)
−10−2
(2)
(3)
(1)PDTB123TT All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 4 — 8 November 2010 5 of 10
NXP Semiconductors PDTB123TT
PNP 500 mA resistor-equipped transistor; R1 = 2.2 kΩ, R2 = open
8. Test information
8.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
9. Package outline
10. Packing information
[1] For further information and the availability of packing methods, see Section 14.
Fig 3. Package outline SOT23 (TO-236AB)
Dimensions in mm 04-11-04
0.45
0.15
1.9
1.1
0.9
3.0
2.8
2.5
2.1
1.4
1.2
0.48
0.38
0.15
0.09
1 2
3
Table 8. Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.[1]
Type number Package Description Packing quantity
3000 10000
PDTB123TT SOT23 4 mm pitch, 8 mm tape and reel -215 -235PDTB123TT All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 4 — 8 November 2010 6 of 10
NXP Semiconductors PDTB123TT
PNP 500 mA resistor-equipped transistor; R1 = 2.2 kΩ, R2 = open
11. Soldering
Fig 4. Reflow soldering footprint SOT23 (TO-236AB)
Fig 5. Wave soldering footprint SOT23 (TO-236AB)
solder lands
solder resist
occupied area
solder paste
sot023_fr
0.5
(3×)
0.6
(3×)
0.6
(3×)
0.7
(3×)
3
1
3.3
2.9
1.7
1.9
2
Dimensions in mm
solder lands
solder resist
occupied area
preferred transport direction during soldering
sot023_fw
2.8
4.5
1.4
4.6
1.4
(2×)
1.2
(2×)
2.2
2.6
Dimensions in mmPDTB123TT All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 4 — 8 November 2010 7 of 10
NXP Semiconductors PDTB123TT
PNP 500 mA resistor-equipped transistor; R1 = 2.2 kΩ, R2 = open
12. Revision history
Table 9. Revision history
Document ID Release date Data sheet status Change notice Supersedes
PDTB123TT v.4 20101108 Product data sheet - PDTB123T_SER_3
Modifications: • Type numbers PDTB123TK and PDTB123TS deleted.
• Table 7 “Characteristics”: unit for VCEsat changed from mV to V.
• Section 8 “Test information”: added.
• Section 11 “Soldering”: added.
• Section 13 “Legal information”: updated.
PDTB123T_SER_3 20091116 Product data sheet - PDTB123T_SER_2
PDTB123T_SER_2 20050804 Product data sheet - PDTB123TK_1
PDTB123TK_1 20050519 Product data sheet - -PDTB123TT All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 4 — 8 November 2010 8 of 10
NXP Semiconductors PDTB123TT
PNP 500 mA resistor-equipped transistor; R1 = 2.2 kΩ, R2 = open
13. Legal information
13.1 Data sheet status
[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
13.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to offer functions and qualities beyond those described in the
Product data sheet.
13.3 Disclaimers
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information.
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and operation of their applications
and products using NXP Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or customer product
design. It is customer’s sole responsibility to determine whether the NXP
Semiconductors product is suitable and fit for the customer’s applications and
products planned, as well as for the planned application and use of
customer’s third party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks associated with their
applications and products.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
third party customer(s). Customer is responsible for doing all necessary
testing for the customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications and
the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from national authorities.
Document status[1][2] Product status[3] Definition
Objective [short] data sheet Development This document contains data from the objective specification for product development.
Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.
Product [short] data sheet Production This document contains the product specification. PDTB123TT All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 4 — 8 November 2010 9 of 10
NXP Semiconductors PDTB123TT
PNP 500 mA resistor-equipped transistor; R1 = 2.2 kΩ, R2 = open
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
13.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
14. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.comNXP Semiconductors PDTB123TT
PNP 500 mA resistor-equipped transistor; R1 = 2.2 kΩ, R2 = open
© NXP B.V. 2010. All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 8 November 2010
Document identifier: PDTB123TT
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
15. Contents
1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 General description . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . 1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . 1
2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2
4 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
6 Thermal characteristics . . . . . . . . . . . . . . . . . . 3
7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 4
8 Test information. . . . . . . . . . . . . . . . . . . . . . . . . 5
8.1 Quality information . . . . . . . . . . . . . . . . . . . . . . 5
9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 5
10 Packing information . . . . . . . . . . . . . . . . . . . . . 5
11 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
12 Revision history. . . . . . . . . . . . . . . . . . . . . . . . . 7
13 Legal information. . . . . . . . . . . . . . . . . . . . . . . . 8
13.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 8
13.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
13.3 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
13.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
14 Contact information. . . . . . . . . . . . . . . . . . . . . . 9
15 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
http://www.farnell.com/datasheets/1754399.pdf
http://www.farnell.com/datasheets/1754399.pdf
1. Product profile
1.1 General description
PNP switching transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD)
plastic package.
NPN complement: PMBT3904.
1.2 Features and benefits
Collector-emitter voltage VCEO = −40 V
Collector current capability IC = −200 mA
1.3 Applications
General amplification and switching
1.4 Quick reference data
2. Pinning information
PMBT3906
PNP switching transistor
Rev. 06 — 2 March 2010 Product data sheet
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
VCEO collector-emitter voltage open base - - −40 V
IC collector current - - −200 mA
Table 2. Pinning
Pin Description Simplified outline Graphic symbol
1 base
2 emitter
3 collector
1 2
3
006aab259
2
1
3PMBT3906_6 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 06 — 2 March 2010 2 of 11
NXP Semiconductors PMBT3906
PNP switching transistor
3. Ordering information
4. Marking
[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
5. Limiting values
[1] Device mounted on an FR4 Printed-Circuit Board (PCB).
Table 3. Ordering information
Type number Package
Name Description Version
PMBT3906 - plastic surface-mounted package; 3 leads SOT23
Table 4. Marking codes
Type number Marking code[1]
PMBT3906 *2A
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VCBO collector-base voltage open emitter - −40 V
VCEO collector-emitter voltage open base - −40 V
VEBO emitter-base voltage open collector - −6 V
IC collector current - −200 mA
ICM peak collector current - −200 mA
IBM peak base current - −100 mA
Ptot total power dissipation Tamb ≤ 25 °C [1] - 250 mW
Tj junction temperature - 150 °C
Tamb ambient temperature −65 +150 °C
Tstg storage temperature −65 +150 °CPMBT3906_6 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 06 — 2 March 2010 3 of 11
NXP Semiconductors PMBT3906
PNP switching transistor
6. Thermal characteristics
[1] Device mounted on an FR4 PCB.
7. Characteristics
Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
Rth(j-a) thermal resistance from
junction to ambient
in free air [1] - - 500 K/W
Table 7. Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
ICBO collector-base cut-off
current
VCB = −30 V; IE =0A - - −50 nA
IEBO emitter-base cut-off
current
VEB = −6 V; IC =0A - - −50 nA
hFE DC current gain VCE = −1 V
IC = −0.1 mA 60 - -
IC = −1 mA 80 - -
IC = −10 mA 100 - 300
IC = −50 mA 60 - -
IC = −100 mA 30 - -
VCEsat collector-emitter
saturation voltage
IC = −10 mA; IB = −1 mA - - −250 mV
IC = −50 mA; IB = −5 mA - - −400 mV
VBEsat base-emitter
saturation voltage
IC = −10 mA; IB = −1 mA - - −850 mV
IC = −50 mA; IB = −5 mA - - −950 mV
td delay time ICon = −10 mA;
IBon = −1 mA;
IBoff = 1 mA
- - 35 ns
tr rise time - - 35 ns
ton turn-on time - - 70 ns
ts storage time - - 225 ns
tf fall time - - 75 ns
toff turn-off time - - 300 ns
fT transition frequency VCE = −20 V;
IC = −10 mA;
f = 100 MHz
250 - - MHz
Cc collector capacitance VCB = −5 V; IE = ie = 0 A;
f = 1 MHz
- - 4.5 pF
Ce emitter capacitance VEB = −500 mV;
IC = ic = 0 A; f = 1 MHz
- - 10 pF
NF noise figure IC = −100 μA;
VCE = −5 V; RS =1kΩ;
f = 10 Hz to 15.7 kHz
- - 4 dBPMBT3906_6 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 06 — 2 March 2010 4 of 11
NXP Semiconductors PMBT3906
PNP switching transistor
VCE = −1 V
(1) Tamb = 150 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Tamb = 25 °C
Fig 1. DC current gain as a function of collector
current; typical values
Fig 2. Collector current as a function of
collector-emitter voltage; typical values
VCE = −1 V
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(3) Tamb = 150 °C
IC/IB = 10
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(3) Tamb = 150 °C
Fig 3. Base-emitter voltage as a function of
collector current; typical values
Fig 4. Base-emitter saturation voltage as a function
of collector current; typical values
0
400
600
200
mhc459
−10−1 −1 −10
IC (mA)
hFE
−102 −103
(1)
(3)
(2)
0 −10
−250
0
−50
−100
−150
−200
−2
VCE (V)
IC
(mA)
−4 −6 −8
006aab845
IB (mA) = −1.5
−1.05
−0.75
−0.45
−0.15
−0.3
−0.6
−0.9
−1.2
−1.35
mhc461
−600
−800
−400
−1000
−1200
VBE
(mV)
−200
IC (mA)
−10−1 −103 −102 −1 −10
(1)
(2)
(3)
mhc462
−600
−800
−400
−1000
−1200
VBEsat
(mV)
−200
IC (mA)
−10−1 −103 −102 −1 −10
(1)
(2)
(3)PMBT3906_6 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 06 — 2 March 2010 5 of 11
NXP Semiconductors PMBT3906
PNP switching transistor
IC/IB = 10
(1) Tamb = 150 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig 5. Collector-emitter saturation voltage as a function of collector current; typical values
−103
−102
−10
mhc463
−10−1 −1 −10
IC (mA)
VCEsat
(mV)
−102 −103
(1)
(2)
(3)PMBT3906_6 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 06 — 2 March 2010 6 of 11
NXP Semiconductors PMBT3906
PNP switching transistor
8. Test information
Fig 6. BISS transistor switching time definition
VI = 5 V; T = 500 μs; tp = 10 μs; tr = tf ≤ 3 ns
R1 = 56 Ω; R2 = 2.5 kΩ; RB = 3.9 kΩ; RC = 270 Ω
VBB = 1.9 V; VCC = −3 V
Oscilloscope: input impedance Zi = 50 Ω
Fig 7. Test circuit for switching times
006aaa266
−IBon (100 %)
−IB
input pulse
(idealized waveform)
−IBoff
90 %
10 %
−IC (100 %)
−IC
td
ton
90 %
10 %
tr
output pulse
(idealized waveform)
tf
t
ts
toff
RC
R2
R1
DUT
mgd624
Vo
RB
(probe)
450 Ω
(probe)
450 Ω oscilloscope oscilloscope
VBB
VI
VCCPMBT3906_6 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 06 — 2 March 2010 7 of 11
NXP Semiconductors PMBT3906
PNP switching transistor
9. Package outline
10. Packing information
[1] For further information and the availability of packing methods, see Section 13.
Fig 8. Package outline SOT23 (TO-236AB)
Dimensions in mm 04-11-04
0.45
0.15
1.9
1.1
0.9
3.0
2.8
2.5
2.1
1.4
1.2
0.48
0.38
0.15
0.09
1 2
3
Table 8. Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.[1]
Type number Package Description Packing quantity
3000 10000
PMBT3906 SOT23 4 mm pitch, 8 mm tape and reel -215 -235PMBT3906_6 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 06 — 2 March 2010 8 of 11
NXP Semiconductors PMBT3906
PNP switching transistor
11. Revision history
Table 9. Revision history
Document ID Release date Data sheet status Change notice Supersedes
PMBT3906_6 20100302 Product data sheet - PMBT3906_N_5
Modifications: • The format of this data sheet has been redesigned to comply with the new identity
guidelines of NXP Semiconductors.
• Legal texts have been adapted to the new company name where appropriate.
• Section 4 “Marking”: amended
• Table 7 “Characteristics”: F redefined to NF noise figure
• Section 8 “Test information”: added
• Figure 6: added
• Figure 8: superseded by minimized package outline drawing
• Section 10 “Packing information”: added
• Section 12 “Legal information”: updated
PMBT3906_N_5 20071004 Product data sheet - PMBT3906_4
PMBT3906_4 20040121 Product specification - PMBT3906_3
PMBT3906_3 19990427 Product specification - PMBT3906_CNV_2
PMBT3906_CNV_2 19970505 Product specification - -PMBT3906_6 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 06 — 2 March 2010 9 of 11
NXP Semiconductors PMBT3906
PNP switching transistor
12. Legal information
12.1 Data sheet status
[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
12.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to offer functions and qualities beyond those described in the
Product data sheet.
12.3 Disclaimers
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information.
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on a weakness or default in the
customer application/use or the application/use of customer’s third party
customer(s) (hereinafter both referred to as “Application”). It is customer’s
sole responsibility to check whether the NXP Semiconductors product is
suitable and fit for the Application planned. Customer has to do all necessary
testing for the Application in order to avoid a default of the Application and the
product. NXP Semiconductors does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from national authorities.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
12.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
Document status[1][2] Product status[3] Definition
Objective [short] data sheet Development This document contains data from the objective specification for product development.
Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.
Product [short] data sheet Production This document contains the product specification. PMBT3906_6 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 06 — 2 March 2010 10 of 11
NXP Semiconductors PMBT3906
PNP switching transistor
13. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.comNXP Semiconductors PMBT3906
PNP switching transistor
© NXP B.V. 2010. All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 2 March 2010
Document identifier: PMBT3906_6
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
14. Contents
1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 General description . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . 1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . 1
2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 1
3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2
4 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
6 Thermal characteristics . . . . . . . . . . . . . . . . . . 3
7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3
8 Test information. . . . . . . . . . . . . . . . . . . . . . . . . 6
9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 7
10 Packing information . . . . . . . . . . . . . . . . . . . . . 7
11 Revision history. . . . . . . . . . . . . . . . . . . . . . . . . 8
12 Legal information. . . . . . . . . . . . . . . . . . . . . . . . 9
12.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 9
12.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
12.3 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
12.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
13 Contact information. . . . . . . . . . . . . . . . . . . . . 10
14 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
SG2525A
SG3525A
REGULATING PULSE WIDTH MODULATORS
..8 TO 35 V OPERATION .5.1 V REFERENCE TRIMMED TO ± 1 % .100 Hz TO 500 KHz OSCILLATOR RANGE .SEPARATE OSCILLATOR SYNC TERMINAL .ADJUSTABLE DEADTIME CONTROL .INTERNAL SOFT-START .PULSE-BY-PULSE SHUTDOWN INPUT UNDERVOLTAGE LOCKOUT WITH
.HYSTERESIS LATCHING PWM TO PREVENT MULTIPLE
.PULSES DUAL SOURCE/SINK OUTPUT DRIVERS
DESCRIPTION
The SG3525A series of pulse width modulator integrated
circuits are designed to offer improved performance
and lowered external parts count when
used in designing all types of switching power supplies.
The on-chip + 5.1 V reference is trimmed to ±
1 % and the input common-mode range of the error
amplifier includes the reference voltage eliminating
external resistors. A sync input to the oscillator allows
multiple units to be slaved or a single unit to be
synchronized to an external system clock. A single
resistor between the CT and the discharge terminals
provide a wide range of dead time ad- justment.
These devices also feature built-in soft-start circuitry
with only an external timing capacitor required. A
shutdown terminal controls both the soft-start circuity
and the output stages, providing instantaneous
turn off through the PWM latch with pulsed shutdown,
as well as soft-start recycle with longer shutdown
commands. These functions are also controlled
by an undervoltage lockout which keeps the outputs
off and the soft-start capacitor discharged for
sub-normal input voltages. This lockout circuitry includes
approximately 500 mV of hysteresis for jitterfree
operation. Another feature of these PWM circuits
is a latch following the comparator. Once a
PWM pulses has been terminated for any reason,
the outputs will remain off for the duration of the period.
The latch is reset with each clock pulse. The
output stages are totem-pole designs capable of
sourcing or sinking in excess of 200 mA. The
SG3525A output stage features NOR logic, giving a
LOW output for an OFF state.
DIP16 16(Narrow)
Type Plastic DIP SO16
SG2525A SG2525AN SG2525AP
SG3525A SG3525AN SG3525AP
PIN CONNECTIONS AND ORDERING NUMBERS (top view)
®
June 2000 1/12
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
Vi Supply Voltage 40 V
VC Collector Supply Voltage 40 V
IOSC Oscillator Charging Current 5 mA
Io Output Current, Source or Sink 500 mA
IR Reference Output Current 50 mA
IT Current through CT Terminal
Logic Inputs
Analog Inputs
5
– 0.3 to + 5.5
– 0.3 to Vi
mA
V
V
Ptot Total Power Dissipation at Tamb = 70 °C 1000 mW
Tj Junction Temperature Range – 55 to 150 °C
Tstg Storage Temperature Range – 65 to 150 °C
Top Operating Ambient Temperature : SG2525A
SG3525A
– 25 to 85
0 to 70
°C
°C
THERMAL DATA
Symbol Parameter SO16 DIP16 Unit
Rth j-pins
Rth j-amb
Rth j-alumina
Thermal Resistance Junction-pins Max
Thermal Resistance Junction-ambient Max
Thermal Resistance Junction-alumina (*) Max 50
50
80
°C/W
°C/W
°C/W
* Thermal resistance junction-alumina with the device soldered on the middle of an alumina supporting substrate measuring 15 ´ 20 mm ; 0.65 mm
thickness with infinite heatsink.
BLOCK DIAGRAM
SG2525A-SG3525A
2/12
ELECTRICAL CHARACTERISTICS
(V# i = 20 V, and over operating temperature, unless otherwise specified)
Symbol Parameter Test Conditions
SG2525A SG3525A
Unit
Min. Typ. Max. Min. Typ. Max.
REFERENCE SECTION
VREF Output Voltage Tj = 25 °C 5.05 5.1 5.15 5 5.1 5.2 V
DVREF Line Regulation Vi = 8 to 35 V 10 20 10 20 mV
DVREF Load Regulation IL = 0 to 20 mA 20 50 20 50 mV
DVREF/DT* Temp. Stability Over Operating Range 20 50 20 50 mV
* Total Output Variation Line, Load and
Temperature
5 5.2 4.95 5.25 V
Short Circuit Current VREF = 0 Tj = 25 °C 80 100 80 100 mA
* Output Noise Voltage 10 Hz £f £ 10 kHz,
Tj = 25 °C
40 200 40 200 mVrms
DVREF* Long Term Stability Tj = 125 °C, 1000 hrs 20 50 20 50 mV
OSCILLATOR SECTION * *
*, · Initial Accuracy Tj = 25 °C ± 2 ± 6 ± 2 ± 6 %
*, · Voltage Stability Vi = 8 to 35 V ± 0.3 ± 1 ± 1 ± 2 %
Df/DT* Temperature Stability Over Operating Range ± 3 ± 6 ± 3 ± 6 %
fMIN Minimum Frequency RT = 200 KW CT = 0.1 mF 120 120 Hz
fMAX Maximum Frequency RT = 2 KW CT = 470 pF 400 400 KHz
Current Mirror IRT = 2 mA 1.7 2 2.2 1.7 2 2.2 mA
*, · Clock Amplitude 3 3.5 3 3.5 V
*, · Clock Width Tj = 25 °C 0.3 0.5 1 0.3 0.5 1 ms
Sync Threshold 1.2 2 2.8 1.2 2 2.8 V
Sync Input Current Sync Voltage = 3.5 V 1 2.5 1 2.5 mA
ERROR AMPLIFIER SECTION (VCM = 5.1 V)
VOS Input Offset Voltage 0.5 5 2 10 mV
Ib Input Bias Current 1 10 1 10 mA
Ios Input Offset Current 1 1 mA
DC Open Loop Gain RL ³ 10 MW 60 75 60 75 dB
* Gain Bandwidth
Product
Gv = 0 dB Tj = 25 °C 1 2 1 2 MHz
*, z DC Transconduct. 30 KW £ RL £ 1 MW
Tj = 25 °C
1.1 1.5 1.1 1.5 ms
Output Low Level 0.2 0.5 0.2 0.5 V
Output High Level 3.8 5.6 3.8 5.6 V
CMR Comm. Mode Reject. VCM = 1.5 to 5.2 V 60 75 60 75 dB
PSR Supply Voltage
Rejection
Vi = 8 to 35 V 50 60 50 60 dB
SG2525A-SG3525A
3/12
ELECTRICAL CHARACTERISTICS (continued)
Symbol Parameter Test Conditions
SG2525A SG3525A
Unit
Min. Typ. Max. Min. Typ. Max.
PWM COMPARATOR
Minimum Duty-cycle 0 0 %
· Maximum Duty-cycle 45 49 45 49 %
· Input Threshold Zero Duty-cycle 0.7 0.9 0.7 0.9 V
Maximum Duty-cycle 3.3 3.6 3.3 3.6 V
* Input Bias Current 0.05 1 0.05 1 mA
SHUTDOWN SECTION
Soft Start Current VSD = 0 V, VSS = 0 V 25 50 80 25 50 80 mA
Soft Start Low Level VSD = 2.5 V 0.4 0.7 0.4 0.7 V
Shutdown Threshold To outputs, VSS = 5.1 V
Tj = 25 °C
0.6 0.8 1 0.6 0.8 1 V
Shutdown Input Current VSD = 2.5 V 0.4 1 0.4 1 mA
* Shutdown Delay VSD = 2.5 V Tj = 25 °C 0.2 0.5 0.2 0.5 ms
OUTPUT DRIVERS (each output) (VC = 20 V)
Output Low Level Isink = 20 mA 0.2 0.4 0.2 0.4 V
Isink = 100 mA 1 2 1 2 V
Output High Level Isource = 20 mA 18 19 18 19 V
Isource = 100 mA 17 18 17 18 V
Under-Voltage Lockout Vcomp and Vss = High 6 7 8 6 7 8 V
IC
Collector Leakage VC = 35 V 200 200 mA
tr* Rise Time CL = 1 nF, Tj = 25 °C 100 600 100 600 ns
tf* Fall Time CL = 1 nF, Tj = 25 °C 50 300 50 300 ns
TOTAL STANDBY CURRENT
Is Supply Current Vi = 35 V 14 20 14 20 mA
* These parameters, although guaranteed over the recommended operating conditions, are not 100 % tested in production. · Tested at fosc = 40 KHz (RT = 3.6 KW, CT = 10nF, RD = 0 W). Approximate oscillator frequency is defined by :
f = 1
CT (0.7 RT + 3 RD)
.DC transconductance (gM) relates to DC open-loop voltage gain (Gv) according to the following equation : Gv = gM RL where RL is the resistance
from pin 9 to ground. The minimum gM specification is used to calculate minimum Gv when the error amplifier output is loaded.
SG2525A-SG3525A
4/12
TEST CIRCUIT
SG2525A-SG3525A
5/12
Figure 1 : Oscillator Charge Time vs. RT
and CT.
Figure 2 : Oscillator Discharge Time vs. RD
and CT.
RECOMMENDED OPERATING CONDITIONS (·)
Parameter Value
Input Voltage (Vi) 8 to 35 V
Collector Supply Voltage (VC) 4.5 to 35 V
Sink/Source Load Current (steady state) 0 to 100 mA
Sink/Source Load Current (peak) 0 to 400 mA
Reference Load Current 0 to 20 mA
Oscillator Frequency Range 100 Hz to 400 KHz
Oscillator Timing Resistor 2 KW to 150 KW
Oscillator Timing Capacitor 0.001 mF to 0.1 mF
Dead Time Resistor Range 0 to 500 W
· (×) Range over which the device is functional and parameter limits are guaranteed.
Figure 3 : Output Saturation
Characteristics.
Figure 4 : Error Amplifier Voltage Gain and
Phase vs. Frequency.
SG2525A-SG3525A
6/12
SHUTDOWN OPTIONS (see Block Diagram)
Since both the compensation and soft-start terminals
(Pins 9 and 8) have current source pull-ups,
either can readily accept a pull-down signal which
only has to sink a maximum of 100 mA to turn off the
outputs. This is subject to the added requirement of
discharging whatever external capacitance may be
attached to these pins.
An alternate approach is the use of the shutdown circuitry
of Pin 10 which has been improved to enhance
the available shutdown options. Activating
this circuit by applying a positive signal on Pin 10
performs two functions : the PWM latch is immediately
set providing the fastest turn-off signal to the
outputs ; and a 150 mA current sink begins to discharge
the external soft-start capacitor. If the shutdown
command is short, the PWM signal is terminated
without significant discharge of the soft-start
capacitor, thus, allowing, for example, a convenient
implementation of pulse-by-pulse current limiting.
Holding Pin 10 high for a longer duration, however,
will ultimately discharge this external capacitor, recycling
slow turn-on upon release.
Pin 10 should not be left floating as noise pickup
could conceivably interrupt normal operation.
Figure 5 : Error Amplifier.
PRINCIPLES OF OPERATION
SG2525A-SG3525A
7/12
Figure 7 : Output Circuit (1/2 circuit shown).
Figure 6 : Oscillator Schematic.
SG2525A-SG3525A
8/12
Figure 10. Figure 11.
For single-ended supplies, the driver outputs are
grounded. The VC terminal is switched to ground by
the totem-pole source transistors on alternate oscillator
cycles.
In conventional push-pull bipolar designs, forward
base drive is controlled by R1 - R3. Rapid turn-off
times for the power devices are achieved with
speed-up capacitors C1 and C2.
The low source impedance of the output drivers provides
rapid charging of Power Mos input capacitance
while minimizing external components.
Low power transformers can be driven directly.
Automatic reset occurs during dead time, when both
ends of the primary winding are switched to ground.
Figure 8. Figure 9.
SG2525A-SG3525A
9/12
DIP16
DIM.
mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
a1 0.51 0.020
B 0.77 1.65 0.030 0.065
b 0.5 0.020
b1 0.25 0.010
D 20 0.787
E 8.5 0.335
e 2.54 0.100
e3 17.78 0.700
F 7.1 0.280
I 5.1 0.201
L 3.3 0.130
Z 1.27 0.050
OUTLINE AND
MECHANICAL DATA
SG2525A-SG3525A
10/12
SO16 Narrow
DIM.
mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 1.75 0.069
a1 0.1 0.25 0.004 0.009
a2 1.6 0.063
b 0.35 0.46 0.014 0.018
b1 0.19 0.25 0.007 0.010
C 0.5 0.020
c1 45° (typ.)
D (1) 9.8 10 0.386 0.394
E 5.8 6.2 0.228 0.244
e 1.27 0.050
e3 8.89 0.350
F (1) 3.8 4 0.150 0.157
G 4.6 5.3 0.181 0.209
L 0.4 1.27 0.016 0.050
M 0.62 0.024
S
(1) D and F do not include mold flash or protrusions. Mold flash or potrusions shall not exceed 0.15mm (.006inch).
OUTLINE AND
MECHANICAL DATA
8°(max.)
SG2525A-SG3525A
11/12
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No
license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this
publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics
products are not authorized for use as critical components in life support devices or systems without express written
approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
© 2000 STMicroelectronics – Printed in Italy – All Rights Reserved
STMicroelectronics GROUP OF COMPANIES
Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco -
Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A.
http://www.st.com
SG2525A-SG3525A
12/12
AN2794
Application note
1 kW dual stage DC-AC converter based on the STP160N75F3
Introduction
This application note provides design guidelines and performance characterization of the
STEVAL-ISV001V1 demonstration board.
This board implements a 1 kW dual stage DC-AC converter, suitable for use in batterypowered
uninterruptible power supplies (UPS) or photovoltaic (PV) standalone systems.
The converter is fed by a low DC input voltage varying from 20 V to 28 V, and is capable of
supplying up to 1 kW of output power on a single-phase AC load. These features are
possible thanks to a dual stage conversion topology that includes an efficient step-up pushpull
DC-DC converter, which produces a regulated high-voltage DC bus and a sinusoidal HBridge
PWM inverter to generate a 50 Hz, 230 Vrms output sine wave. Other key features of
the system proposed are high power density, high switching frequency and efficiency
greater than 90% over a wide output load range
Figure 1. 1 kW DC-AC converter prototype
www.st.com
Contents AN2794
2/39 Doc ID 14827 Rev 2
Contents
1 System description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
2 Design considerations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
2.1 Layout considerations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
3 Schematic description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
4 Experimental results . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
5 Conclusion . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
6 Bibliography . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
Appendix A Component list. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31
Appendix B Product technical specification . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35
7 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38
AN2794 List of tables
Doc ID 14827 Rev 2 3/39
List of tables
Table 1. System specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Table 2. Push-pull converter specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Table 3. HF transformer design parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Table 4. Output inductor design parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Table 5. Power MOSFET . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Table 6. Diode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Table 7. Bill of material (BOM) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31
Table 8. Document revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38
List of figures AN2794
4/39 Doc ID 14827 Rev 2
List of figures
Figure 1. 1 kW DC-AC converter prototype . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Figure 2. Block diagram of an offline UPS system. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Figure 3. Possible use of a DC-AC converter in standalone PV conversion . . . . . . . . . . . . . . . . . . . . 5
Figure 4. Block diagram of the proposed conversion scheme . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Figure 5. Push-pull converter typical waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Figure 6. Distribution of converter losses. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Figure 7. Distribution of losses with 3 STP160N75F3s paralleled . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Figure 8. Component placement . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Figure 9. Top layer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Figure 10. Bottom layer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
Figure 11. Schematic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
Figure 12. Characteristic waveforms (measured at 24 V input voltage and 280 W resistive load) . . . 26
Figure 13. Characteristic waveforms (measured at 28 V input voltage and 1000 W resistive load) . . 26
Figure 14. MOSFET voltage (ch4) and current (ch3) without RC snubber . . . . . . . . . . . . . . . . . . . . . 27
Figure 15. MOSFET voltage (ch4) and current (ch3) with RC snubber . . . . . . . . . . . . . . . . . . . . . . . . 27
Figure 16. Rectifier diode current (ch3) and voltage (ch4) without RDC snubber . . . . . . . . . . . . . . . . 27
Figure 17. Rectifier diode current (ch3) and voltage (ch4) with RDC snubber. . . . . . . . . . . . . . . . . . . 27
Figure 18. Ch1, ch3 MOSFETs drain current, ch2, ch4 MOSFET drain-source voltage . . . . . . . . . . . 28
Figure 19. Startup, ch2, ch3 inverter voltage and current, ch4 DC bus voltage . . . . . . . . . . . . . . . . . 28
Figure 20. DC-DC converter efficiency with 20 V input . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
Figure 21. DC-DC converter efficiency with 22 V input . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
Figure 22. DC-DC converter efficiency with 24 V input . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
Figure 23. DC-DC converter efficiency with 26 V input . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
Figure 24. DC-DC converter efficiency with 28 V input . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
Figure 25. Converter efficiency . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
Figure 26. Technical specification for 1.5 mH 2.5 A inductor L4 (produced by MAGNETICA) . . . . . . 35
Figure 27. Technical specification for 1 kW, 100 kHz switch mode power transformer TX1
(produced by MAGNETICA) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36
Figure 28. Dimensional drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37
AN2794 System description
Doc ID 14827 Rev 2 5/39
1 System description
In a UPS system, as shown in Figure 2, a DC-AC converter is always used to convert the
DC power from the batteries to AC power used to supply the load. The basic scheme also
includes a battery pack, a battery charger which converts AC power from the grid into DC
power, and a transfer switch to supply the load from the mains or from the energy storage
elements if a line voltage drop or failure occurs.
Figure 2. Block diagram of an offline UPS system
Another application where a DC-AC converter is always required is shown in the block
diagram of Figure 3. In this case, the converter is part of a conversion scheme commonly
used in standalone photovoltaic systems. An additional DC-DC converter operates as a
battery charger while performing a maximum power point tracking algorithm (MPPT), which
is necessary to maximize the energy yield from the PV array. The battery pack is always
present to store energy when solar radiation is available and release it at night or during
hours of low insolation.
Figure 3. Possible use of a DC-AC converter in standalone PV conversion
A possible implementation of an isolated DC-AC converter, which can be successfully used
in both the above mentioned applications, is given in the block diagram of Figure 4. It
consists of three main sections:
1. The DC-DC converter
2. The DC-AC converter
3. The power supply section
Battery
AC/DC DC/AC SWITCH
Battery
Charger
+
MPPT
Batteries
LC Filter
DC/DC
DC/AC
Load
System description AN2794
6/39 Doc ID 14827 Rev 2
Figure 4. Block diagram of the proposed conversion scheme
The DC-DC section is a critical part of the converter design. In fact, the need for high overall
efficiency (close to 90% or higher) together with the specifications for continuous power
rating, low input voltage range leading to high input current, and the need for high switching
frequency to minimize weight and size of passive components, makes it a quite challenging
design.
Due to the constraints given by the specifications given in Table 1, few topology solutions
are suitable to meet the efficiency target. Actually, since the input voltage of the DC-AC
converter must be at least equal to 350 V, it is not feasible to use non-isolated DC-DC
converters. Moreover, the output power rating prevents the use of single switch topologies
such as the flyback and the forward. Among the remaining isolated topologies, the half
bridge and full bridge are more suitable for high DC input voltage applications and also
characterized by the added complexity of gate drive circuitry of the high side switches.
Due to such considerations, the push-pull represents the most suitable choice. This
topology features two transistors on the primary side and a center tapped high frequency
transformer, as shown in the step-up section in Figure 4. It is quite efficient at low input
voltage making it widely used in battery powered UPS applications. Both power devices are
ground referenced with consequent simple gate drive circuits. They are alternatively turned
Table 1. System specifications
Specification Value
Nominal input voltage 24 V
Output voltage 230 Vrms, 50 Hz
Output power 1kW
Efficiency 90%
Switching frequency 100 kHz (DC-DC); 16 kHz (DC-AC)
AN2794 System description
Doc ID 14827 Rev 2 7/39
on and off in order to transfer power to each primary of the center tapped transformer.
Contemporary conduction of both devices must be avoided by limiting the duty cycle value
of the constant frequency PWM modulator to less than 0.5. The PWM modulator should also
prevent unequal ON times for the driving signals since this would result in transformer
saturation caused by the "Flux Walking" phenomenon.
The basic operation is similar to a forward converter. In fact, when a primary switch is active,
the current flows through the rectifier diodes, charging the output inductor, while when both
the switches are off, the output inductor discharges. It is important to point out that the
operating frequency of the output inductor is twice the switching frequency.
A transformer reset circuit is not needed thanks to the bipolar flux operation, which also
means better transformer core utilization with respect to single-ended topologies.
The main disadvantage of the push-pull converter is the breakdown voltage of primary
power devices which has to be higher than twice the input voltage. In fact, when voltage is
applied to one of the two transformer primary windings by the conduction of a transistor, the
reflected voltage across the other primary winding puts the drain of the off state transistor at
twice the input voltage with respect to ground. This is the reason why push-pull converters
are not suitable for high input voltage applications.
For the above mentioned reasons, the voltage fed push-pull converter, shown in Figure 4, is
chosen to boost the input voltage from 24 V to a regulated 350 V, suitable for optimal
inverter operation. The high voltage conversion ratio can be achieved by proper transformer
turns ratio design, taking into account that the input to output voltage transfer function is
given by:
Equation 1
The duty cycle is set by a voltage mode PWM regulator (SG3525) to keep a constant output
DC bus voltage. This voltage is then converted into AC using a standard H-bridge converter
implemented with four ultrafast switching IGBTs in PowerMESH™ technology, switching at
16 kHz. The switching strategy, based on PWM sinusoidal modulation, is implemented on
an 8-bit ST7lite39 microcontroller unit. This allows the use of a simple LC circuit to obtain a
high quality sine wave in terms of harmonic content.
The power supply section consists of a buck-boost converter to produce a regulated 15 V
from a minimum input voltage of 4 V. The circuit can be simply implemented by means of a
L5973 device, characterized by an internal P-channel DMOS transistor and few external
components. In this way, it is possible to supply all the driving circuits and the PWM
modulator. A standard linear regulator, L7805, provides 5 V supply to the microcontroller
unit.
in
1
2
out DV
N
N
V = 2
Design considerations AN2794
8/39 Doc ID 14827 Rev 2
2 Design considerations
The basic operation of a voltage fed push-pull converter is shown in Figure 5, where
theoretical converter waveforms are highlighted. In practice, significant overvoltages across
devices M1, M2 and across the four rectifier diodes are observed in most cases due to the
leakage inductance of the high frequency transformer. As a consequence, the breakdown
voltage of primary devices must be greater than twice the input voltage, and the use of
snubbing and/or clamping circuits is often helpful.
Special attention has to be paid to transformer design, due to the difficulties in minimizing
the leakage inductance and implementing low-voltage high-current terminations. Moreover,
imbalance in the two primary inductance values must be avoided both by symmetrical
windings and proper printed circuit board (PCB) layout. While transformer construction
techniques guarantee good symmetry and low leakage inductance values, asymmetrical
layout due to inappropriate component placement can be the source of different PCB trace
inductances. Whatever the cause of a difference in peak current through the switching
elements, transformer saturation in voltage mode push-pull converters can occur in a few
switching cycles with catastrophic consequences.
Figure 5. Push-pull converter typical waveforms
AN2794 Design considerations
Doc ID 14827 Rev 2 9/39
Starting from the specifications in Table 2, a step-by-step design procedure and some
design hints to obtain a symmetrical layout are given below.
A switching frequency of f = 100 kHz was chosen to minimize passive components size and
weight, then the following step-by-step calculation was done:
● Switching period:
Equation 2
● Maximum duty cycle
The theoretical maximum on time for each phase of the push-pull converter is:
Equation 3
Since deadtime has to be provided in order to avoid simultaneous device conduction, it is
better to choose the maximum duty cycle of each phase as:
Equation 4
This means a total deadtime of 1μs at maximum duty cycle, occurring for minimum input
voltage operation.
● Input power
Assuming 90% efficiency the input power is:
Equation 5
Table 2. Push-pull converter specifications
Specification Symbol Value
Nominal input voltage Vin 24 V
Maximum input voltage Vinmax 28 V
Minimum input voltage Vinmin 20 V
Nominal output power Pout 1000 W
Nominal output voltage Vout 350 V
Target efficiency η > 90%
Switching frequency f 100 kHz
10 s
10
1
f
1
T 5 = = = μ
t on 0.5T 5 s
* = = μ
0.45
T
t
D 0.9 on
*
max = =
1111W
0.9
P
P out
in = =
Design considerations AN2794
10/39 Doc ID 14827 Rev 2
● Maximum average input current:
Equation 6
● Maximum equivalent flat topped input current:
Equation 7
● Maximum input RMS current:
Equation 8
● Maximum MOSFET RMS current:
Equation 9
● Minimum MOSFET breakdown voltage:
Equation 10
● Transformer turns ratio:
Equation 11
● Minimum duty cycle value:
Equation 12
● Duty cycle at nominal input voltage:
Equation 13
● Maximum average output current:
Equation 14
55.55 A
20
1111
V
P
I
inmin
in
in = = =
61.72 A
0.9
55.55
2D
I
I
max
in
pft = = =
Iin Ipft 2Dmax 58.55A RMS
= =
IMosRMS = Ipft Dmax = 41.4A
VBrk 1.3 2 VinMax 72.8 V Mos
= • • =
19
2V D
V
N
N
N
in max
out
1
2
min
= = =
0.32
2NV
V
D
inmax
out
min = =
0.38
2NV
V
D
in
out
min = =
2.86A
V
P
I
out
out
out = =
AN2794 Design considerations
Doc ID 14827 Rev 2 11/39
● Secondary maximum RMS current
Assuming that the secondary top flat current value is equal to the average output value the
rms secondary current is:
Equation 15
● Rectifier diode voltage:
Equation 16
● Output filter inductor value:
Equation 17
Assuming a ripple current value ΔI= 15% Iout = 0.43A, the minimum value for the output filter
inductance is:
Equation 18
With this value of inductance continuous current mode (CCM) operation is guaranteed for a
minimum output current of:
Equation 19
which means a minimum load of 75 W is required for CCM operation. The chosen value for
this design is L=1.5 mH.
● Output filter capacitor value:
Equation 20
Considering a maximum output ripple value equal to:
Equation 21
Isec Iout Dmax 1.91A RMS
= =
Vdiode = NVinMax = 532 V
in
1
2
min V
N
N
L ≥ ( -
I
t
V ) onMax
out Δ
Lmin = 1.109 mH
0.215A
2
I
I
outMin =
Δ
=
s
0
L T
V
I
8
1
C
Δ
Δ
=
ΔV0 = 0.1%Vout = 0.35 V
Design considerations AN2794
12/39 Doc ID 14827 Rev 2
the minimum value of capacitance is:
Equation 22
and the equivalent series resistance (ESR) has to be lower than:
Equation 23
● Input capacitor:
Equation 24
where Icrms is the RMS capacitor current value given by:
Equation 25
and
Equation 26
then
Equation 27
Cmin = 1.53 μF
= Ω
Δ
Δ
= 0.81
I
V
ESR
L
0
max
in
onMax
in Crms V
T
C I
Δ
Δ
=
I I I2 19A
in
2
Crms InRms
= - =
V 0.1%V 0.028V
in inMax Δ = =
3053 F
V
T
C I
in
onMax
in Crms = μ
Δ
Δ
=
AN2794 Design considerations
Doc ID 14827 Rev 2 13/39
● HF transformer design
The design method is based on the Kg core geometry approach. The design can be done
according to the specifications in Table 3.
The first step is to compute the transformer apparent power given by:
Equation 28
The second step is the electrical condition parameter calculation Ke:
Equation 29
where Kf=4 is the waveform coefficient (for square waves).
Equation 30
The next step is to calculate the core geometry parameter:
Equation 31
Table 3. HF transformer design parameters
Specification Symbol Value
Nominal input voltage Vin 24 V
Maximum input voltage Vinmax 28 V
Minimum input voltage Vinmin 20 V
RMS input current Iin 41.4 A
Nominal output voltage Vout 350 V
Output current Iout 2.86 A
Switching frequency f 100 kHz
Efficiency η 98%
Regulation α 0.05%
Max operating flux density Bm 0.05T
Window utilization Ku 0.3
Duty cycle Dmax 0.45
Temperature rise Tr 30 °C
1)V I 2021 W
1
P (
P
P 0 0 0
0
t + =
η
+ =
η
=
( ) 4 2m
2 2f
Ke 0.145 K f B 10= • • • -
K 0.145(4)2 (100.000)2 (0.05)2 (10 4 ) 5800
e = = -
5
e
t
g 0.348 cm
2K
P
K =
α
=
Design considerations AN2794
14/39 Doc ID 14827 Rev 2
The Kg constant is related to the core geometrical parameters by the following equation:
Equation 32
where Wa is the core window area, Ac is the core cross sectional area and MLT is the mean
length per turn.
For example, choosing an E55/28/21 core with N27 ferrite, having
● Wa= 2.8 cm2
● Ac= 3.5 cm2
● MLT= 11.3 cm
the resulting Kg factor is:
● Kg= 0.91 cm2
which is then suitable for this application.
Once the core has been chosen, it is possible to calculate the number of primary turns as
follows:
Equation 33
The primary inductance value is:
Equation 34
and the number of secondary turns is:
Equation 35
At this point wires must be selected in order to implement primary and secondary windings.
At 100 kHz the current penetration depth is:
Equation 36
Then, the wire diameter can be selected as follows:
Equation 37
MLT
W A K
K u
2c
a
g =
2 turns
BA
V D T
N
c
in max
1
min =
Δ
=
L N AL 4 5800 nH 23.2 H
2
p = = • = μ
N2 = N • N1 = 38 turns
0.0209 cm
f
6.62 δ = =
d = 2δ = 0.0418cm
AN2794 Design considerations
Doc ID 14827 Rev 2 15/39
and the conductor section is:
Equation 38
Checking the wire table we notice that AWG26, having a wire area of AWAWG26 = 0.00128
cm2, can be used in this design. Considering a current density J = 500 A/cm2 the number of
primary wires is given by:
Equation 39
where:
Equation 40
Since the AWG26 has a resistance of 1345 μΩ/cm, the primary resistance is:
Equation 41
and so the value of resistance for the primary winding is:
Equation 42
Using the same procedure, the secondary winding is:
Equation 43
Equation 44
Equation 45
Equation 46
2
2
W 0.00137cm
4
d
A = π =
62
A
A
S
wAWG26
wp
np = =
in 2
wp 0.08 cm
J
I
A = =
21.69 / cm
62
1345 / cm
rp = μΩ
μΩ
=
Rp = N1 •MLT • rp = 490.1 μΩ
out 2
ws 0.00572 cm
J
I
A = =
5
A
A
S
wAWG26
ws
ns = =
269 / cm
5
1345 / cm
rs = μΩ
μΩ
=
Rs = N2 • MLT • rs = 115 .5mΩ
Design considerations AN2794
16/39 Doc ID 14827 Rev 2
The total copper losses are:
Equation 47
And transformer regulation is:
Equation 48
From the core loss curve of N27 material, at 55 °C, 50mT and 100 kHz, the selected core
has the following losses:
Equation 49
Where Ve= 43900 mm3 is the core volume. The transformer temperature rise is:
Equation 50
with
Equation 51
● Output inductor
The output filter inductor can be made using powder cores to minimize eddy current losses
and introduce a distributed air gap into the core. The design parameters are shown in
Table 4:
Table 4. Output inductor design parameters
Specification Symbol Value
Minimum inductance value Lmin 1.5 mH
DC current I0 2.86 A
AC current ΔI 0.41 A
Output power P0 1000 W
Ripple frequency fr 200 kHz
Operating flux density Bm 0.3 T
Core material Kool μ
Window utilization K u 0.4
Temperature rise Tr 25 °C
W 78 . 1 I R I R P P P 2s
in s
2
Cu = p + s = p + =
100 0.178%
P
P
out
α = cu =
V 1.23W
m
kW
PV = 28.1 3 • e =
T R (P P ) 33 oC
r = th • Cu + V =
W
C
R 11
o
th =
AN2794 Design considerations
Doc ID 14827 Rev 2 17/39
The peak current value across the inductor is:
Equation 52
To select a proper core we must compute the LI2
pk value:
Equation 53
Knowing this parameter, from Magnetics’ core chart, a 46.7 mm x 28.7 mm x 12.2 mm Kool
μ toroid, with μ=60 permeability and AL = 0.086 nH/turn can be selected. The required
number of turns is then:
Equation 54
The resulting magnetizing force (DC bias) is:
Equation 55
The initial value of turns has to be increased by dividing it by 0.8 (as shown in the data
catalog) to take into account the reduction of initial permeability (μe = 39 at full load) at
nominal current value. Then, the adjusted number of turns is:
Equation 56
The wire table shows that at 3 A the AWG20 can be used. With this choice, the maximum
number of turns per layer, for the selected core, is Nlayer= 96 and the resistance per single
layer is rlayer= 0.166Ω. The total winding resistance is then:
Equation 57
and the copper losses are:
Equation 58
The core losses can be evaluated as follows:
3.06A
2
I
Ipk I0 =
Δ
= +
LI2 10.3mH A
pk = •
132 turns
A
L
N
L
= =
84.2 oersteds
L
NI
H 0.4
e
= π =
N = 165 turns
= r = 0.38Ω
N
N
R layer
layer
W 1 . 3 RI P 2o
cu = =
Design considerations AN2794
18/39 Doc ID 14827 Rev 2
Equation 59
Equation 60
where MPL=11.8 cm is the magnetic path length. Since the core weight is 95.8 g, the core
losses are:
Equation 61
● Analysis of the converter losses
Once the transformer has been designed, the next step in performing the loss analysis is to
choose the power devices both for the input and output stage of the push-pull converter.
According to the calculations given above the following components have been selected:
MOSFET and diode losses can be separated into conduction and switching losses which
can be estimated, in the worst case operating condition (junction temperature of 100 °C),
with the following equations:
Equation 62
Equation 63
Equation 64
Table 5. Power MOSFET
Device Type RDS(on) tr+tf Vbr Id at 100 °C
STP160N75F3
Power
MOSFET
4.5 mΩ 70 ns+15 ns 75 V 96 A
Table 6. Diode
Device Type VF at 175 °C trrMax VRRM IF at 100 °C
STTH8R06 Ultrafast diode 1.4 V 25 ns 600 V 8 A
P kB2.12f1.23 2.047mW/ g
L = ac =
( )
0.0137T
MPL
10
2
I
0.4 N
B
4
e
ac =
μ
Δ
π
=
-
PL = 0.2W
P 1.6R I 12.5W ON RMS
Mos
2
cond = ds =
Pgate = QgVgsf = 0.165W
8.5W
T
V I (t t )
2
1
P Off mos r f
sw(ON OFF)
=
+
=
+
AN2794 Design considerations
Doc ID 14827 Rev 2 19/39
Equation 65
Equation 66
Note: Assuming: tB= trr/2, VRM= 350 V
Converter losses are distributed according to the graphic in Figure 6, where PCB trace
losses and control losses are not considered. What is important to note is that primary
switch conduction accounts for 36% of total DC-DC converter losses. This contribution can
be reduced by paralleling either two or three power devices. For example, by paralleling
three STP160N75F3s, a reduction in MOSFET conduction losses of 33% is achieved. Thus
MOSFET conduction losses account for 16% of total DC-DC converter losses, resulting in a
1.8% efficiency improvement.
Figure 6. Distribution of converter losses
P V I 2.67W
condDiode F secRMS = =
Pdiode VRMIRRtbf 2.4W SW
= =
36%
25%
16%
14%
4% 5%
MOSFET cond. Losses MOSFET sw. Losses
Diode cond. Losses Diode sw. Losses
Transformer Losses Inductor Losses
AM00627v1
Design considerations AN2794
20/39 Doc ID 14827 Rev 2
Figure 7. Distribution of losses with 3 STP160N75F3s paralleled
2.1 Layout considerations
Because of the high power level involved with this design, the parasitic elements must be
reduced as much as possible. Proper operation of the push-pull converter can be assured
through geometrical symmetry of the PCB board. In fact, geometrical symmetry leads to
electrical symmetry, preventing a difference in the current values across the two primary
windings of the transformer which can be the cause of core saturation. The output stage of
the converter has also to be routed with a certain degree of symmetry even if in this case the
impact of unwanted parasitic elements is lower because of lower current values with respect
to the input stage. In Figure 8, Figure 9 and Figure 10, a symmetrical layout designed for the
application is shown.
16%
33%
21%
18%
6% 6%
MOSFET cond. Losses MOSFET sw. Losses
Diode cond. Losses Diode sw. Losses
Transformer Losses Inductor Losses
AM00628v1
AN2794 Design considerations
Doc ID 14827 Rev 2 21/39
Figure 8. Component placement
Figure 9. Top layer
AM00629v1
AM00630v1
Design considerations AN2794
22/39 Doc ID 14827 Rev 2
Figure 10. Bottom layer
To obtain geometrical symmetry the HF transformer has been placed at the center of the
board, which has been developed using double-sided, 140 μm FR-4 substrate with
135 x 185 mm size. In addition, this placement of the transformer is the most suitable since
it is the bulkiest part of the board. Both the primary and secondary AC current loops are
placed very close to the transformer in order to reduce their area and consequently their
parasitic inductances. For this reason the MOSFET and rectifier diodes lie at the edges of
the PCB. Input loop PCB traces show identical shapes to guarantee the same values of
resistance and parasitic inductance. Also the IGBTs of the inverter stage lie at one edge of
the board. This gives the advantage of using a single heat sink for each group of power
components. The output filter is placed on the right side of the transformer, between the
bridge rectifier and the inverter stage.
The power supply section lies on the left side of the transformer, simplifying the routing of
the 15 V bus dedicated to supply all the control circuitry.
AM00631v1
AN2794 Schematic description
Doc ID 14827 Rev 2 23/39
3 Schematic description
The schematic of the converter is shown in Figure 11. Three MOSFETs are paralleled in
order to transfer power to each primary winding of the transformer. Both RC and RCD
networks can be connected between the drain and source of the MOSFETs to reduce the
overvoltages and voltage ringing caused by unclamped leakage inductance. The output of
the transformer is rectified by a full bridge of ultrafast soft-recovery diodes. An RCD network
is connected across the rectifier output to clamp the diode voltage to its steady state value
and recover the reverse recovery energy stored in the leakage inductance. This energy is
first transferred to the clamp capacitor and then partially diverted to the output through a
resistor.
The IGBT full bridge is connected to the output of the push-pull stage. Their control signals
are generated by an SG3525 voltage mode PWM modulator. Its internal clock, necessary to
generate the 100 kHz modulation, is set by an external RC network. The PWM output stage
is capable of sourcing or sinking up to 100 mA which can be enough to directly drive the
gate of the MOSFETs devices. The PWM controller power dissipation, given by the sum of
its own power consumption and the power needed to drive six STP160N75F3s at 100 kHz,
can be evaluated with the following equation:
Equation 67
where Vs and Is are the supply voltage and current.
Since this power dissipation would result in a high operating temperature of the IC, a totem
pole driving circuit has been used to handle the power losses and peak currents, achieving
a more favorable operating condition. This circuit was implemented by means of an NPNPNP
complementary pair of BJT transistors. The control and driver stage schematic is
shown in Figure 11.
PContoller tot = 6QgfVdrive + VsIs = 1.3W
Schematic description AN2794
24/39 Doc ID 14827 Rev 2
Figure 11. Schematic
AN2794 Schematic description
Doc ID 14827 Rev 2 25/39
The PWM modulation of the H-bridge inverter is implemented on an ST7lite39
microcontroller connected to the gate drive circuit composed of two L6386, as shown in the
schematic in Figure 11.
The auxiliary power supply section consists of an L5973D and an L7805, used to implement
a buck-boost converter to decrease the battery voltage from 24 V to 15 V and from 15 V to
5 V respectively.
Experimental results AN2794
26/39 Doc ID 14827 Rev 2
4 Experimental results
Typical voltage and current waveforms of the DC-AC converter and the efficiency curves of
the push-pull DC-DC stage, measured at different input voltages, are shown below. In
particular, Figure 12 and Figure 13 show both input and output characteristic waveforms of
the DC-DC converter both in light load and full load condition.
The HF transformer leakage inductance, which is about 1% of the magnetizing inductance,
is the cause of severe ringing across the input and the output power devices. MOSFETs
voltage and current waveforms with and without the connection of a snubber network are
shown in Figure 14 and 15, while Figure 16 and 17 show the effect of the RCD clamp circuit
connected across the rectifier bridge output. In Figure 18 the current and the voltage across
one of the three parallel-connected MOSFETs, powering each of the two windings of the
transformer are shown, while in Figure 19 it is possible to observe the variation of the
inverter output voltage and current together with the DC-DC converter bus voltage. In
Figure 20, 21, 22, 23 and 24, the efficiency curves of the push-pull converter measured with
an RL load are given. A maximum efficiency above 93% has been measured at nominal
input voltage and 640 W output power. The minimum value of efficiency has been tested
under low load and maximum input voltage. In Figure 25, the efficiency of the whole board is
shown. The efficiency tests have been carried out connecting an RL load at the inverter
output connectors, with 3 mH output inductor.
Figure 12. Characteristic waveforms
(measured at 24 V input
voltage and 280 W resistive
load)
Figure 13. Characteristic waveforms
(measured at 28 V input
voltage and 1000 W resistive
load)
Ch1 and Ch2: MOSFETs drain source voltage;
Ch4: HF transformer output voltage; Ch3: filter
inductor current
Ch1 and Ch2: MOSFETs drain source voltage;
Ch3: filter inductor current
AN2794 Experimental results
Doc ID 14827 Rev 2 27/39
Figure 14. MOSFET voltage (ch4) and
current (ch3) without RC
snubber
Figure 15. MOSFET voltage (ch4) and
current (ch3) with RC
snubber
Figure 16. Rectifier diode current (ch3)
and voltage (ch4) without
RDC snubber
Figure 17. Rectifier diode current (ch3)
and voltage (ch4) with RDC
snubber
Experimental results AN2794
28/39 Doc ID 14827 Rev 2
Figure 18. Ch1, ch3 MOSFETs drain
current, ch2, ch4 MOSFET
drain-source voltage
Figure 19. Startup, ch2, ch3 inverter
voltage and current, ch4 DC
bus voltage
Figure 20. DC-DC converter efficiency
with 20 V input
Figure 21. DC-DC converter efficiency
with 22 V input
Figure 22. DC-DC converter efficiency
with 24 V input
Figure 23. DC-DC converter efficiency
with 26 V input
0.8
0.85
0.9
0.95
1
0 200 400 600 800 1000 1200
Output Power [W]
Efficiency
AM00636v1
0.8
0.85
0.9
0.95
1
0 200 400 600 800 1000 1200
Output Power [W]
Efficiency
AM00637v1
0.8
0.85
0.9
0.95
1
0 200 400 600 800 1000 1200
Output Power [W]
Efficiency
AM00638v1
0.8
0.85
0.9
0.95
1
0 200 400 600 800 1000 1200
Output Power [W]
Efficiency
AM00639v1
AN2794 Experimental results
Doc ID 14827 Rev 2 29/39
Figure 24. DC-DC converter efficiency
with 28 V input
Figure 25. Converter efficiency
0.75
0.8
0.85
0.9
0.95
0 200 400 600 800 1000 1200
Output Power [W]
Efficiency
AM00640v1
87
88
89
90
91
92
93
0 200 400 600 800 1000
Output Power [W]
Effciency %
AM00641v1
Conclusion AN2794
30/39 Doc ID 14827 Rev 2
5 Conclusion
The theoretical analysis, design and implementation of a DC-AC converter, consisting of a
push-pull DC-DC stage and a full-bridge inverter circuit, have been evaluated. Due to the
use of the parallel connection of three STP160N75F3 MOSFETs the converter shows good
performance in terms of efficiency. Moreover the use of an ST7lite39 8-bit microcontroller
allows achieving simple control of the IGBTs used to implement the DC-AC stage. Any
additional feature, such as regulation of the AC output voltage or protection requirements,
can simply be achieved with firmware development.
6 Bibliography
1. Power Electronics: Converters, Applications and Design
2. Transformer and Inductor Design Handbook, Second Edition
3. Magnetic Core Selection for Transformers and Inductors, Second Edition
4. Switching Power Supply Design. New York.
AN2794 Component list
Doc ID 14827 Rev 2 31/39
Appendix A Component list
Table 7. Bill of material (BOM)
Component Part value Description Supplier
Cs1 100 nF, 630 V Polip. cap., MKP series EPCOS
Cs2 100 nF, 630 V Polip. cap., MKP series EPCOS
C1 100 nF, 50 V X7R ceramic cap.., B37987 series EPCOS
C2 100 nF, 50 V X7R ceramic cap., B37987 series EPCOS
C57 100 nF, 50 V X7R ceramic cap., B37987 series EPCOS
C59 100 nF, 50 V X7R ceramic cap., B37987 series EPCOS
C10 47 μF, 35 V SMD tantalum capacitor TAJ series AVX
C11 4.7 nF, 25 V SMD multilayer ceramic capacitor muRata
C12 100 μF, 25 V SMD X7R ceramic cap. C3225 series; size 1210 TDK
C14 47 μF, 35 V SMD tantalum capacitor TAJ series AVX
C16 100 pF, 25 V SMD multilayer ceramic capacitor muRata
C41 100 pF, 50 V General purpose ceramic cap., radial AVX
C17 680 nF, 25 V SMD multilayer ceramic capacitor muRata
C18 22 μF, 25 V Electrolytic cap FC series Panasonic
C19 22 μF, 25 V Electrolytic cap. FC series Panasonic
C26 2.2 μF, 25 V X7R ceramic cap., B37984 series EPCOS
C31 2.2 μF, 25 V X7R ceramic cap., B37984 series EPCOS
C28 470 nF, 25 V X7R ceramic cap., B37984 series EPCOS
C33 470 nF, 25 V X7R ceramic cap., B37984 series EPCOS
C34 33 μF, 450 V Electrolytic cap. B43821 series EPCOS
C35 33 μF, 450 V Electrolytic cap. B43821 series EPCOS
C37 3900 μF, 35 V Elec. capacitor 0.012 Ω, YXH series Rubycon
C38 3900 μF, 35 V Elec. capacitor 0.012 Ω, YXH series Rubycon
C39 150 μF, 35 V Electrolytic cap. fc series Panasonic
C40 22 nF, 50 V General purpose ceramic cap., radial AVX
C42 100 μF, 25 V Electrolytic cap. fc series Panasonic
C51 100 μF, 25 V Electrolytic cap.fc series Panasonic
C52 100 μF, 25 V Electrolytic cap.fc series Panasonic
C53 2.2 μF, 450 V Elcrolytic capactor B43851 series EPCOS
C54 4.7 nF, 100 V Polip. cap., MKT series EPCOS
C55 4.7 nF, 100 V Polip. cap., MKT series EPCOS
C56 470 nF, 50 V X7R ceramic cap., B37984 series EPCOS
Component list AN2794
32/39 Doc ID 14827 Rev 2
C58 0.33 μF, 50 V X7R ceramic cap., B37984 series EPCOS
C60 150 nF, 50 V SMD multilayer ceramic capacitor muRata
D1 STTH8R06D Ultrafast high voltage rectifier; TO-220AC STMicroelectronics
D2 STTH8R06 D Ultrafast high voltage rectifier; TO-220AC STMicroelectronics
D3 STTH8R06 D Ultrafast high voltage rectifier; TO-220AC STMicroelectronics
D4 STTH8R06 D Ultrafast high voltage rectifier; TO-220AC STMicroelectronics
D13 STTH8R06 D Ultrafast high voltage rectifier; TO-220AC STMicroelectronics
D5 BAT46 Small signal Schottky diode; SOD-123 STMicroelectronics
D6 BAT46 Small signal Schottky diode; SOD-123 STMicroelectronics
D8 BAT46 Small signal Schottky diode; SOD-123 STMicroelectronics
D7 BAT46 Small signal Schottky diode; SOD-123 STMicroelectronics
D9 STTH1L06 Ultrafast high voltage rectifier; DO-41 STMicroelectronics
D10 STTH1L06 Ultrafast high voltage rectifier; DO-41 STMicroelectronics
D11 1N5821 Schottky rectifier; DO-221AD STMicroelectronics
D12 1N5821 Schottky rectifier; DO-221AD STMicroelectronics
VOUT AC 1 CON1 FASTON RS components
VOUT AC 2 CON1 FASTON RS components
VOUT - CON1 FASTON RS components
VOUT + CON1 FASTON RS components
VIN CON1 FASTON RS components
GND CON1 FASTON RS components
IC1 L6386D High-voltage high and low side driver; dip-14 STMicroelectronics
IC2 L6386D High-voltage high and low side driver; dip-14 STMicroelectronics
IGBT LOW 1 STGW19NC60WD N-channel 19 A - 600 V TO-247 PowerMESH™ IGBT STMicroelectronics
IGBT HIGH 1 STGW19NC60WD N-channel 19 A - 600 V TO-247 PowerMESH™ IGBT STMicroelectronics
IGBT LOW 2 STGW19NC60WD N-channel 19 A - 600 V TO-247 PowerMESH™ IGBT STMicroelectronics
IGBT HIGH 2 STGW19NC60WD N-channel 19 A - 600 V TO-247 PowerMESH™ IGBT STMicroelectronics
J1 CON10 10-way idc connector commercial box header series Tyco Electronics
L3 150 μH, 3 A Power use SMD inductor; SLF12575T series TDK
L4(1) 1174.0018 ST04 1.5 mH, filter inductor MAGNETICA
M1 STP160N75F3
N-channel 75 V - 3.5 mΩ 120 A TO-220 STripFET™
Power MOSFET
STMicroelectronics
M2 STP160N75F3
N-channel 75 V - 3.5 mΩ 120 A TO-220 STripFET™
Power MOSFET
STMicroelectronics
M3 STP160N75F3
N-channel 75 V - 3.5 mΩ 120 A TO-220 STripFET™
Power MOSFET
STMicroelectronics
Table 7. Bill of material (BOM) (continued)
Component Part value Description Supplier
AN2794 Component list
Doc ID 14827 Rev 2 33/39
M4 STP160N75F3
N-channel 75 V - 3.5 mΩ 120 A TO-220 STripFET™
Power MOSFET
STMicroelectronics
M5 STP160N75F3
N-channel 75 V - 3.5 mΩ 120 A TO-220 STripFET™
Power MOSFET
STMicroelectronics
M6 STP160N75F3
N-channel 75 V - 3.5 mΩ 120 A TO-220 STripFET™
Power MOSFET
STMicroelectronics
Q8 STN4NF03L
N-channel 30 V , 6.5 A SOT-223 STripFET™ II Power
MOSFET
STMicroelectronics
Q9 2SD882 NPN Power BJT 30 V, 3 A transistor- SOT-32 STMicroelectronics
Q10 2SD882 NPN Power BJT 30 V, 3 A transistor- SOT-32 STMicroelectronics
Q11 2SB772 NPN Power BJT 30 V, 3 A transistor - SOT-32 STMicroelectronics
Q12 2SB772 NPN Power BJT 30 V, 3 A transistor - SOT-32 STMicroelectronics
RGATE IGBT
LOW 1
100 SMD standard film res - 1/8 W - 1% - 100 ppm/°C BC components
RGATE IGBT
HIGH 1
100 SMD standard film res - 1/8 W - 1% - 100 ppm/°C BC components
RGATE IGBT
LOW 2
100 SMD standard film res - 1/8 W - 1% - 100 ppm/°C BC components
RGATE IGBT
HIGH 2
100 SMD standard film res - 1/8 W - 1% - 100 ppm/°C BC components
R7 390 kΩ SMD standard film res - 1/8 W - 1% - 100 ppm/°C BC components
R9 5.6 kΩ SMD standard film res - 1/8 W - 1% - 100 ppm/°C BC components
R20
12 Ω SMD standard film res - 1/8 W - 1% - 100 ppm/°C BC components
R21
R22
10 Ω SMD standard film res - 1/8 W - 1% - 100 ppm/°C BC components
R23
R24
R25
R99
R100
R101
R102
R103
R104
R81 22 kΩ Standard film res - 1/4 W 5%, axial 05 T-Ohm
R82 3.3 kΩ Standard film res - 1/4 W 5%, axial 05 T-Ohm
R83 39 kΩ Standard film res - 1/4 W 5%, axial 05 T-Ohm
R87 10 kΩ SMD standard film res - 1/8 W - 1% - 100ppm/°C BC components
Table 7. Bill of material (BOM) (continued)
Component Part value Description Supplier
Component list AN2794
34/39 Doc ID 14827 Rev 2
R88
10 kΩ SMD standard film res - 1/8 W - 1% - 100ppm/°C BC components
R89
R90
R91
R92
R93 1.5 kΩ SMD standard film res - 1/8 W – 1% - 100ppm/°C BC components
R94 470 Ω High voltage 17 W ceramic resistor sbcv type Meggit CGS
R95 470 Ω High voltage 17 W ceramic resistor sbcv type Meggit CGS
R96
10 Ω Standard film res – 2 W 5%, axial 05 T-Ohm
R97
R98 47 kΩ Standard film res - 1/4 W 5%, axial 05 T-Ohm
TX1(2) 1356.0004 rev.01 Power transformer MAGNETICA
U1 SG3525 Pulse width modulator SO-16 (narrow) STMicroelectronics
U16 L5973D 2.5 A switch step down regulator; HSOP8 STMicroelectronics
U17 ST7FLITE39F2 8-bit microcontroller; SO-20 STMicroelectronics
U20 L7805 Positive voltage regulator; D2PAK STMicroelectronics
124 HEAT SINK
Part n. 78185, S562 cooled package TO-220; thermal
res. 7.52 °C/W at length 70 mm width 40 mm height
57 mm
Aavid Thermalloy
125
HEAT SINK
Part n. 78350, SA36 cooled package TO-220; thermal
res. 1.2°C/W at length 135 mm width 49.5 mm height
85.5 mm
Aavid Thermalloy
126
1. The technical specification for this component is provided in Figure 26.
2. The technical specification for this component is provided in Figure 27.
Table 7. Bill of material (BOM) (continued)
Component Part value Description Supplier
AN2794 Product technical specification
Doc ID 14827 Rev 2 35/39
Appendix B Product technical specification
Figure 26. Technical specification for 1.5 mH 2.5 A inductor L4 (produced by
MAGNETICA)
TYPICAL APPLICATION
INDUCTOR FOR DC/DC CONVERTERS AS BUCK, BOOST E
BUCK-BOOST CONVERTERS. ALSO SUITABLE IN HALFBRIDGE,
PUSH-PULL AND FULL-BRIDGE APPLICATIONS
TECHNICAL DATA
INDUCTANCE 1.5mH ±15%
(MEASURE 1KHZ, TA 20°C)
RESISTANCE 0.52 max
(MEASURE DC, TA 20°C)
OPERATING VOLTAGE 800 VP MAX
(F 100K HZ, IR 2.5A, TA 20°C)
OPERATING VOLTAGE 2.5 A MAX
(MEASURE DC 800 VP, TA 20°C)
SATURATION CURRENT 4.5 A NOM
(MEASURE DC, L 50%NOM, TA 20°C)
SELF-RESONANT FREQUENY 1MHZ NOM
(TA 20°C)
OPERATING TEMPERATURE RANGE -10°C÷+45°C
(IR 2.5 A MAX)
DIMENSIONS 45X20 H46mm
WEIGHT 78g CIRCA
SCHEMATIC
INDUCTANCE VS CURRENT
INDUCTANCE VS FREQUENCY
DIMENSIONAL DRAWING
DIMENSIONS IN MM, DRAWING NOT IN SCALE
1
3
10%
100%
0 1 2 3 4 5 6
L
I [A]
0%
50%
100%
150%
200%
250%
0 200 400 600 800 1000
L/L(1kHz)
f [kHz]
1 2 2 3
3 min 1
45 max
46 max
20 max
0.8 (X4), RECOMMENDED PCB HOLE 1.2 (X4)
2 3
4
BOTTOM VIEW (PIN SIDE)
12.7
10.16
30.48
Product technical specification AN2794
36/39 Doc ID 14827 Rev 2
Figure 27. Technical specification for 1 kW, 100 kHz switch mode power transformer
TX1 (produced by MAGNETICA)
TYPICAL APPLICATION
TRANSFORMER TO POWER APPLICATIONS WITH HALF -
BRIDGE , PUSH -PULL E FULL -BRIDGE TYPOLOGY .
TECHNICAL DATA
INDUCTANCE
(MEASURE 1KHZ, TA 20°C)
PIN 1,2 – 3,4,5 17.2 uH MIN
PIN 3,4,5 – 6,7 17.2 uH MIN
PIN 9 – 13 (10-12 IN CC ) 5.7 mH MIN
R ESISTANCE
(MEASURE D .C, TA 20°C)
PIN 1,2 – 3,4,5 6 mΩ MAX
PIN 3,4,5 – 6,7 6 mΩ MAX
PIN 9 – 13 (10-12 IN CC ) 90 mΩ MAX
TRANSFORMER RATIO
(MEASURE 10KHZ, 10-12 IN CC , TA 20°C)
PIN 13 – 9 ⇔ 1,2 – 3,4,5 18 ± 5%
PIN 13 – 9 ⇔ 3,4,5 – 6,7 18 ± 5%
L EAKAGE INDUCTANCE 0.11 % NOM
(MEASURE 9-13, 1-2-3-4-5-6-7 AND 10-12 IN C .C, F 10KHZ, TA 20°C)
OPERATING VOLTAGE 800 VP MAX
(MEASURE 13-9, 10-12 IN CC , F 100KHZ , DUTY CYCLE 0.8,T A 20°C)
OPERATING CURRENT 2.5 A MAX
(MEASURE 13-9 WITH 1-2-3-4-5-6-7 IN CC ,
PMAX 1KW ,F 100 KHZ, TA 20°C)
OPERATING FREQUENCY 100KHZ NOM
(P MAX 1KW , TA 20°C)
OPERATING TEMPERATURE RANGE -10°C ÷+45°C
(P MAX 1KW, F 100KHZ )
INSULATION CLASS I
( PMAX 1KW, TA 20°C )
P RIMARY TO SECONDARY INSULATION 2500V
(F 50H Z,DURATION TEST 2”, TA 20°C)
MAXIMUM DIMENSIONS 57X57H45 mm
WEIGHT 292g CIRCA
SCHEMATIC
PRODUCT PICTURE
PIN DESCRIPTION
PIN (*) FUNCTION PIN (*) FUNCTION
1A P RIMARY DRAIN A 8 NOT USED
2A P RIMARY DRAIN A 9 SECONDARY GROUND
3B
PRIMARY +VB 24V
10D INTERMEDIARY S ECONDARY ACCESS
4B 11 MISSING , REFERENCE TO PCB ASSEMBLING
5B 12D INTERMEDIARY S ECONDARY ACCESS
6C P RIMARY DRAIN B 13 S ECONDARY 400V 2.5A
7C P RIMARY DRAIN B 14 NOT USED
(*)P IN WITH THE SAME SUBSCRIPT MU ST BE CONNECTED TOGETHER ON PCB
13
12
1
2
3
4
5
6
7
10
9
AN2794 Product technical specification
Doc ID 14827 Rev 2 37/39
Figure 28. Dimensional drawing
7 8
55.5 max
3 min
ı 1.0, Recommended PCB hole ı 1.4
56.5 max
14 13 12 4 10 9 8
1356.0004
SMT 1kW 100kHz
MAGNETICA 08149
BOTTOM VIEW (PIN SIDE )
40 5
1
7 8
14
MISSING PIN
REFERENCE AS PCB ASSEMBLING
Revision history AN2794
38/39 Doc ID 14827 Rev 2
7 Revision history
Table 8. Document revision history
Date Revision Changes
16-Feb-2009 1 Initial release
13-Jan-2012 2
– Introduction modified
– Section 3 modified
AN2794
Doc ID 14827 Rev 2 39/39
Please Read Carefully:
Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the
right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any
time, without notice.
All ST products are sold pursuant to ST’s terms and conditions of sale.
Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no
liability whatsoever relating to the choice, selection or use of the ST products and services described herein.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this
document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products
or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such
third party products or services or any intellectual property contained therein.
UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED
WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED
WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS
OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT.
UNLESS EXPRESSLY APPROVED IN WRITING BY TWO AUTHORIZED ST REPRESENTATIVES, ST PRODUCTS ARE NOT
RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING
APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY,
DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE
GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER’S OWN RISK.
Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void
any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any
liability of ST.
ST and the ST logo are trademarks or registered trademarks of ST in various countries.
Information in this document supersedes and replaces all information previously supplied.
The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners.
© 2012 STMicroelectronics - All rights reserved
STMicroelectronics group of companies
Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan -
Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America
www.st.com
STEVAL-TDR027V1
Portable UHF 2-way radio demonstration board
based on the PD84008L-E
Features
■ Excellent thermal stability
■ Frequency: 380 - 512 MHz
■ Supply voltage: 7.2 V
■ Output power: > 6 W
■ Power gain: 11.7 ± 0.5 dB
■ Efficiency: 46% - 71%
■ Load mismatch: 20:1 all phases
■ BeO-free amplifier
Description
The STEVAL-TDR027V1 demonstration board is
a portable UHF 2-way radio designed as a
platform for evaluating the performance of the
PD84008L-E LDMOS RF power transistor.
Table 1. Device summary
Part number
STEVAL-TDR027V1
Mechanical specification:
L = 60 mm, W = 30 mm
www.st.com
Contents STEVAL-TDR027V1
2/11 Doc ID 18109 Rev 1
Contents
1 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Impedance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
3 Typical performances . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
4 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
5 Circuit photo . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
STEVAL-TDR027V1 Electrical characteristics
Doc ID 18109 Rev 1 3/11
1 Electrical characteristics
TA = +25 oC, VDD = 7.2 V, Idq = 200 mA
Table 2. Electrical specification
Symbol Test conditions Min Typ Max Unit
Freq Frequency range 380 512 MHz
POUT @ PIN = 27 dBm 6 W
Gain @ PIN = 27 dBm 11.7 ± 0.5 dB
ND @ PIN = 27 dB 46 - 71 %
H2 2nd harmonic @ PIN = 27 dB -38 / -70 dBc
H3 3rd harmonic @ PIN = 27 dB -60 / -70 dBc
VSWR Load mismatch all phases @ POUT = 6 W 20:1
Impedance STEVAL-TDR027V1
4/11 Doc ID 18109 Rev 1
2 Impedance
Figure 1. Impedance diagram
Table 3. Impedance data
F (MHz) ZGS ZDL
380 3,3 + j6,2 2,2 - j0,7
390 3,6 + j6,7 2,2 - j0,4
400 4,1 + j7,1 2,2 - j0,1
410 4,6 + j7,4 2,2 + j0,2
420 5,3 + j7,5 2,2 + j0,5
430 6,2 + j7,3 2,3 + j0,8
440 6,8 + j6,6 2,4 + j1,0
450 7,0 + j5,4 2,4 + j1,3
460 6,4 + j4,2 2,6 + j1,5
470 5,2 + j3,6 2,7 + j1,6
480 3,9 + j3,7 2,8 + j1,7
490 2,8 + j4,2 2,9 + j1,8
500 2,1 + j4,9 3,0 + j1,9
510 1,6 + j5,6 3,1 + j1,8
520 1,3 + j6,3 3,2 + j1,7
STEVAL-TDR027V1 Typical performance
Doc ID 18109 Rev 1 5/11
3 Typical performance
Figure 2. Output power and efficiency vs.
frequency (pin=27 dBm)
Figure 3. Output power and efficiency vs.
frequency (pin=28 dBm)
Figure 4. Gain vs. frequency Figure 5. Gain vs. Pout
Fig
Typical performance STEVAL-TDR027V1
6/11 Doc ID 18109 Rev 1
Figure 8. Harmonics vs. frequency
STEVAL-TDR027V1 Test circuit
Doc ID 18109 Rev 1 7/11
4 Test circuit
Figure 9. Test circuit schematic diagram
+
TL5 TL6
C12
C13 RFout
C11
L4
C10
L3
C9
C6
RFin TL1 TL2
C8 PD84008L-E
LDMOS
R2
R1
R3
C7
L2
L1
C2
C1
Vcc
2 -
1 +
B2 C3 C4 C5
TL4
TL3
D1
FR4
H=60 mil
MSub
B1
Table 4. Component list
Component
ID
Description Value Case size Manufacturer Part code
B1
Ferrite bead
Panasonic EXCELDRC35C
B2 Panasonic EXCELDRC35C
C1, C2
Capacitor
120 pF 1206 MURATA
GRM42-6 COG 121J
50_
C3 1 nF 1206 MURATA GRM42-6 COG 102J 50
C4 100 nF 1206 MURATA
GRM42-6_X7R 104K
50_
C5 10 uF SMT Panasonic EEVHB1V100P
C6, C13 33 pF 100B ATC ATC 100B 330JW
C7 22 pF 100B ATC ATC 100B 220JW
C8 47 pF 100B ATC ATC 100B 470JW
C9 39 pF 100B ATC ATC 100B 390JW
C10 15 pF 100B ATC ATC 100B 150JW
C11 6.8 pF 100B ATC ATC 100B 6R8BW
C12 2.2 pF 100B ATC ATC 100B 2R2BW
D1 Zener diode 5.1 V SOD110 Philips BZX284C5V1
L1
Inductor
18.5 nH Coilcraft A05T
L2 5 nH Coilcraft A02T
L3, L4 2.5 nH Coilcraft A01T
R1 Resistor 1 kΩ 1206 Tyco Electronics 01623440-1
Test circuit STEVAL-TDR027V1
8/11 Doc ID 18109 Rev 1
R2 Potentiometer 10 kΩ Bourns Electronics 3214W-1-103E
R3 Resistor 560 Ω 1206 Bourns Electronics
TL1
Transmission line
W=2.87 mm L=7.4 mm
TL2 W=2.87 mm L=5.0 mm
TL3 W=4.98 mm L=4.8 mm
TL4 W=4.98 mm L=4.0 mm
TL5 W=2.87 mm L=1.5 mm
TL6 W=2.87 mm L=6.1 mm
PD84008L LDMOS STMicroelectronics PD84008L-E
Board FR-4 THk=0.060" 2OZ Cu both sides
Table 4. Component list (continued)
Component
ID
Description Value Case size Manufacturer Part code
STEVAL-TDR027V1 Board photo
Doc ID 18109 Rev 1 9/11
5 Board photo
Figure 10. STEVAL-TDR027V1 demonstration board
Revision history STEVAL-TDR027V1
10/11 Doc ID 18109 Rev 1
6 Revision history
Updated Table 5. Document revision history
Date Revision Changes
18-Oct-2010 1 Initial release.
STEVAL-TDR027V1
Doc ID 18109 Rev 1 11/11
Please Read Carefully:
Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the
right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any
time, without notice.
All ST products are sold pursuant to ST’s terms and conditions of sale.
Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no
liability whatsoever relating to the choice, selection or use of the ST products and services described herein.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this
document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products
or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such
third party products or services or any intellectual property contained therein.
UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED
WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED
WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS
OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT.
UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT
RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING
APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY,
DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE
GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER’S OWN RISK.
Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void
any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any
liability of ST.
ST and the ST logo are trademarks or registered trademarks of ST in various countries.
Information in this document supersedes and replaces all information previously supplied.
The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners.
© 2010 STMicroelectronics - All rights reserved
STMicroelectronics group of companies
Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan -
Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America
www.st.com
L6384E
High voltage half-bridge driver
Datasheet - production data
Features
High voltage rail up to 600 V
dV/dt immunity ± 50 V/nsec in full temperature
range
Driver current capability
– 400 mA source
– 650 mA sink
Switching times 50/30 nsec rise/fall with 1 nF
load
CMOS/TTL Schmitt trigger inputs with
hysteresis and pull-down
Shutdown input
Deadtime setting
Undervoltage lockout
Integrated bootstrap diode
Clamping on VCC
Available in DIP-8/SO-8 packages
Applications
Home appliances
Induction heating
HVAC
Industrial applications and drives
Motor drivers
– DC, AC, PMDC and PMAC motors
Lighting applications
Factory automation
Power supply systems
Description
The L6384E is a high voltage gate driver,
manufactured with the BCD™ “offline”
technology, and able to drive a half-bridge of
power MOS or IGBT devices. The high-side
(floating) section is enabled to work with voltage
rail up to 600 V. Both device outputs can sink and
source 650 mA and 400 mA respectively and
cannot be simultaneously driven high thanks to an
integrated interlocking function. Further
prevention from outputs cross conduction is
guaranteed by the deadtime function, tunable by
the user through an external resistor connected to
the DT/SD pin.
The L6384E device has one input pin, one enable
pin (DT/SD) and two output pins, and guarantees
matched delays between low-side and high-side
sections, thus simplifying device's high frequency
operation. The logic inputs are CMOS/TTL
compatible to ease the interfacing with controlling
devices. The bootstrap diode is integrated inside
the device, allowing a more compact and reliable
solution.
The L6384E features the UVLO protection and
a voltage clamp on the VCC supply voltage. The
voltage clamp is typically around 15.6 V and is
useful in order to ensure a correct device
functioning in cases where VCC supply voltage is
ramped up too slowly or is subject to voltage
drops.
The device is available in a DIP-8 tube and SO-8
tube and tape and reel packaging options.
DIP-8 SO-8
Table 1. Device summary
Part number Package Packaging
L6384E DIP-8 Tube
L6384ED SO-8 Tube
L6384ED013TR SO-8 Tape and reel
www.st.com
Contents L6384E
2/15 DocID13862 Rev 2
Contents
1 Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.2 Thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.3 Recommended operating conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
3 Pin connection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
4 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
4.1 AC operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
4.2 DC operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
4.3 Timing diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
5 Bootstrap driver . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
CBOOT selection and charging . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
6 Typical characteristic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
7 Package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
8 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
DocID13862 Rev 2 3/15
L6384E Block diagram
15
1 Block diagram
Figure 1. Block diagram
LOGIC
UV
DETECTION
LEVEL
SHIFTER
R S
VCC
LVG
DRIVER
VCC
IN
DT/SD
VBOOT
HVG
DRIVER
HVG
H.V.
LOAD
OUT
LVG
GND
D97IN518A
DEAD
TIME
VCC
Idt
Vthi
BOOTSTRAP DRIVER
CBOOT
4
3
5
6
7
8
1
2
Electrical data L6384E
4/15 DocID13862 Rev 2
2 Electrical data
2.1 Absolute maximum ratings
2.2 Thermal data
2.3 Recommended operating conditions
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
Vout Output voltage -3 to Vboot -18 V
Vcc Supply voltage(1)
1. The device has an internal clamping Zener between GND and the Vcc pin, It must not be supplied by a low
impedance voltage source.
- 0.3 to 14.6 V
Is Supply current(1) 25 mA
Vboot Floating supply voltage -1 to 618 V
Vhvg High-side gate output voltage -1 to Vboot V
Vlvg Low-side gate output voltage -0.3 to Vcc +0.3 V
Vi Logic input voltage -0.3 to Vcc +0.3 V
Vsd Shutdown/deadtime voltage -0.3 to Vcc +0.3 V
dVout/dt Allowed output slew rate 50 V/ns
Ptot Total power dissipation (Tj = 85 °C) 750 mW
TJ Junction temperature 150 °C
Ts Storage temperature -50 to 150 °C
Table 3. Thermal data
Symbol Parameter SO-8 DIP-8 Unit
Rth(JA) Thermal resistance junction to ambient 150 100 °C/W
Table 4. Recommended operating conditions
Symbol Pin Parameter Test condition Min. Typ. Max. Unit
Vout 6 Output voltage (1)
1. If the condition Vboot - Vout < 18 V is guaranteed, Vout can range from -3 to 580 V.
580 V
VBS
(2)
2. VBS = Vboot - Vout.
8 Floating supply voltage (1) 17 V
fsw Switching frequency HVG, LVG load CL = 1 nF 400 kHz
Vcc 2 Supply voltage Vclamp V
Tj Junction temperature -45 125 °C
DocID13862 Rev 2 5/15
L6384E Pin connection
15
3 Pin connection
Figure 2. Pin connection (top view)
IN
VCC
DT/SD
GND
1
3
2
4 LVG
VOUT
HVG
8 VBOOT
7
6
5
D97IN519
Table 5. Pin description
No. Pin Type Function
1 IN I Logic input: it is in phase with HVG and in opposition of phase with LVG. It is compatible
to VCC voltage. (Vil Max = 1.5 V, Vih Min = 3.6 V).
2 VCC P Supply input voltage: there is an internal clamp [typ. 15.6 V].
3 DT/SD I
High impedance pin with two functionalities. When pulled lower than Vdt (typ. 0.5 V), the
device is shut down. A voltage higher than Vdt sets the deadtime between the high-side
gate driver and low-side gate driver. The deadtime value can be set forcing a certain
voltage level on the pin or connecting a resistor between the pin 3 and ground. Care
must be taken to avoid below threshold spikes on the pin 3 that can cause undesired
shutdown of the IC. For this reason the connection of the components between the pin 3
and ground has to be as short as possible. This pin can not be left floating for the same
reason. The pin has not be pulled through a low impedance to VCC, because of the drop
on the current source that feeds Rdt. The operative range is: Vdt … 270 K Idt, that
allows a dt range of 0.4 - 3.1 s.
4 GND P Ground
5 LVG O
Low-side driver output: the output stage can deliver 400 mA source and 650 mA sink
(typ. values). The circuit guarantees 0.3 V max. on the pin (at Isink = 10 mA) with
VCC > 3 V and lower than the turn-on threshold. This allows to omit the bleeder resistor
connected between the gate and the source of the external MOSFET normally used to
hold the pin low; the gate driver ensures low impedance also in SD conditions.
6 Vout P High-side driver floating reference: layout care has to be taken to avoid below ground
spikes on this pin.
7 HVG O
High-side driver output: the output stage can deliver 400 mA source and 650 mA sink
(typ. values). The circuit guarantees 0.3 V max. between this pin and Vout
(at Isink = 10 mA) with VCC > 3 V and lower than the turn-on threshold. This allows to omit
the bleeder resistor connected between the gate and the source of the external MOSFET
normally used to hold the pin low; the gate driver ensures low impedance also in SD
conditions.
8 Vboot P
Bootstrap supply voltage: it is the high-side driver floating supply. The bootstrap capacitor
connected between this pin and the pin 6 can be fed by an internal structure named
“bootstrap driver” (a patented structure). This structure can replace the external
bootstrap diode.
Electrical characteristics L6384E
6/15 DocID13862 Rev 2
4 Electrical characteristics
4.1 AC operation
4.2 DC operation
Table 6. AC operation electrical characteristics (VCC = 14.4V; TJ = 25°C)
Symbol Pin Parameter Test condition Min. Typ. Max. Unit
ton 1 vs. 5, 7 High/low-side driver turn-on
propagation delay Vout = 0 V Rdt= 47 k 200+
dt ns
tonsd 3 vs. 5, 7 Shutdown input propagation
delay 220 280 ns
toff 1 vs. 5, 7 High/low-side driver turn-off
propagation delay
Vout = 0 V Rdt = 47 k 250 300 ns
Vout = 0 V Rdt = 146 k 200 250 ns
Vout = 0 V Rdt = 270 k 170 200 ns
tr 5, 7 Rise time CL = 1000 pF 50 ns
tf 5, 7 Fall time CL = 1000 pF 30 ns
Table 7. DC operation electrical characteristics (VCC = 14.4 V; TJ = 25 °C)
Symbol Pin Parameter Test condition Min. Typ. Max. Unit
Supply voltage section
Vclamp 2 Supply voltage clamping Is = 5 mA 14.6 15.6 16.6 V
Vccth1 2 VCC UV turn-on threshold 11.5 12 12.5 V
Vccth2
2
VCC UV turn-off threshold 9.5 10 10.5 V
Vcchys VCC UV hysteresis 2 V
Iqccu
Undervoltage quiescent supply
current Vcc 11 V 150 A
Iqcc Quiescent current Vin = 0 380 500 A
Bootstrapped supply voltage section
Vboot
8
Bootstrap supply voltage 17 V
IQBS Quiescent current IN = HIGH 100 A
ILK High voltage leakage current Vhvg = Vout = Vboot = 600 V 10 A
Rdson Bootstrap driver on-resistance(1) Vcc 12.5 V; IN = LOW 125
High/low-side driver
Iso 5, 7
Source short-circuit current VIN = Vih (tp < 10 s) 300 400 mA
Isi Sink short-circuit current VIN = Vil (tp < 10 s) 500 650 mA
DocID13862 Rev 2 7/15
L6384E Electrical characteristics
15
4.3 Timing diagram
Figure 3. Input/output timing diagram
Symbol Pin Parameter Test condition Min. Typ. Max. Unit
Logic inputs
Vil
1, 3
Low level logic threshold voltage 1.5 V
Vih High level logic threshold voltage 3.6 V
Iih High level logic input current VIN = 15 V 50 70 A
Iil Low level logic input current VIN = 0 V 1 A
Iref 3 Deadtime setting current 28 A
dt 3 vs. 5, 7 Deadtime setting range(2)
Rdt = 47 k
Rdt = 146 k
Rdt = 270 k
0.4 0.5
1.5
2.7 3.1
s
s
s
Vdt 3 Shutdown threshold 0.5 V
1. RDS(on) is tested in the following way:
Where I1 is the pin 8 current when VCBOOT = VCBOOT1, I2 when VCBOOT = VCBOOT2.
2. The pin 3 is a high impedance pin. Therefore dt can be set also forcing a certain voltage V3 on this pin. The deadtime is the
same obtained with an Rdt if it is: Rdt × Iref = V3.
Table 7. DC operation electrical characteristics (continued)(VCC = 14.4 V; TJ = 25 °C)
RDSON
VCC – VCBOOT1 – VCC – VCBOOT2
= I--1------V----C----C---,--V-----C---B----O----O----T---1-------–----I--2-----V-----C---C----,--V----C----B----O----O----T---2----
IN
SD
HVG
LVG
D99IN1017
Bootstrap driver L6384E
8/15 DocID13862 Rev 2
5 Bootstrap driver
A bootstrap circuitry is needed to supply the high voltage section. This function is normally
accomplished by a high voltage fast recovery diode (Figure 4 a). In the L6384E device
a patented integrated structure replaces the external diode. It is realized by a high voltage
DMOS, driven synchronously with the low-side driver (LVG), with a diode in series, as
shown in Figure 4 b. An internal charge pump (Figure 4 b) provides the DMOS driving
voltage. The diode connected in series to the DMOS has been added to avoid undesirable
turn-on.
CBOOT selection and charging
To choose the proper CBOOT value the external MOS can be seen as an equivalent
capacitor. This capacitor CEXT is related to the MOS total gate charge:
Equation 1
The ratio between the capacitors CEXT and CBOOT is proportional to the cyclical voltage loss.
It has to be:
CBOOT>>>CEXT
E.g.: if Qgate is 30 nC and Vgate is 10 V, CEXT is 3 nF. With CBOOT = 100 nF the drop would be
300 mV.
If HVG has to be supplied for a long time, the CBOOT selection has to take into account also
the leakage losses.
E.g.: HVG steady state consumption is lower than 100 A, so if HVG TON is 5 ms, CBOOT
has to supply 0.5 C to CEXT. This charge on a 1 F capacitor means a voltage drop of
0.5 V.
The internal bootstrap driver gives great advantages: the external fast recovery diode can
be avoided (it usually has a great leakage current).
This structure can work only if VOUT is close to GND (or lower) and in the meanwhile the
LVG is on. The charging time (Tcharge ) of the CBOOT is the time in which both conditions are
fulfilled and it has to be long enough to charge the capacitor.
The bootstrap driver introduces a voltage drop due to the DMOS RDSON (typical value:
125 ). At low frequency this drop can be neglected. Anyway increasing the frequency it
must be taken in to account.
The following equation is useful to compute the drop on the bootstrap DMOS:
Equation 2
where Qgate is the gate charge of the external power MOS, Rdson is the on-resistance of the
bootstrap DMOS, and Tcharge is the charging time of the bootstrap capacitor.
CEXT
Qgate
Vgate
= --------------
Vdrop Ich argeRdson Vdrop
Qgate
Tch arge
= = -------------------Rdson
DocID13862 Rev 2 9/15
L6384E Bootstrap driver
15
For example: using a power MOS with a total gate charge of 30 nC, the drop on the
bootstrap DMOS is about 1 V, if the Tcharge is 5 s. In fact:
Equation 3
Vdrop has to be taken into account when the voltage drop on CBOOT is calculated: if this drop
is too high, or the circuit topology doesn’t allow a sufficient charging time, an external diode
can be used.
Figure 4. Bootstrap driver
Vdrop
30nC
5s
= -------------- 125 0.8V
TO LOAD
D99IN1067
H.V.
HVG
a b
LVG
HVG
LVG
CBOOT
TO LOAD
H.V.
CBOOT
DBOOT
VS VBOOT VS
VOUT
VBOOT
VOUT
Typical characteristic L6384E
10/15 DocID13862 Rev 2
6 Typical characteristic
Figure 5. Typical rise and fall times
vs. load capacitance
Figure 6. Quiescent current vs. supply
voltage
Figure 7. Deadtime vs. resistance Figure 8. Driver propagation delay
vs. temperature
Figure 9. Deadtime vs. temperature Figure 10. Shutdown threshold
vs. temperature
For both high and low side buffers @25°C Tamb
0 1 2 3 4 5 C (nF)
0
50
100
150
200
250
time
(nsec)
Tr
D99IN1015
Tf
0 2 4 6 8 10 12 14 VS(V)
10
102
103
104
Iq
(μA)
D99IN1016
50 100 150 200 250 300
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
dt (s)
Rdt (k)
Typ.
@ Vcc = 14.4V
-45 -25 0 25 50 75 100 125
0
100
200
300
400
Ton,Toff (ns)
@ Rdt = 47kOhm
@ Rdt = 146kOhm
@ Rdt = 270kOhm
Tj (°C)
Typ.
Typ.
Typ.
@ Vcc = 14.4V
-45 -25 0 25 50 75 100 125
Tj (°C)
0
0.5
1
1.5
2
2.5
3
dt (s)
R=47K
R=146K
Typ. R=270K
Typ.
Typ.
@ Vcc = 14.4V
-45 -25 0 25 50 75 100 125
0
0.2
0.4
0.6
0.8
1
Vdt (V)
Tj (°C)
Typ.
@ Vcc = 14.4V
DocID13862 Rev 2 11/15
L6384E Typical characteristic
15
Figure 11. VCC UV turn-on vs. temperature Figure 12. Output source current
vs. temperature
Figure 13. VCC UV turn-off
vs. temperature
Figure 14. Output sink current
vs. temperature
-45 -25 0 25 50 75 100 125
10
11
12
13
14
15
Vccth1 (V)
Tj (°C)
Typ.
-45 -25 0 25 50 75 100 125
0
200
400
600
800
1000
Current (mA)
Tj (°C)
Typ.
@ Vcc = 14.4V
-45 -25 0 25 50 75 100 125
8
9
10
11
12
13
Vccth2 (V)
Tj (°C)
Typ.
-45 -25 0 25 50 75 100 125
0
200
400
600
800
1000
Current (mA)
Tj (°C)
Typ.
@ Vcc = 14.4V
Package information L6384E
12/15 DocID13862 Rev 2
7 Package information
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK is an ST trademark.
Figure 15. DIP-8 package outline
Table 8. DIP-8 package mechanical data
Symbol
Dimensions (mm) Dimensions (inch)
Min. Typ. Max. Min. Typ. Max.
A 3.32 0.131
a1 0.51 0.020
B 1.15 1.65 0.045 0.065
b 0.356 0.55 0.014 0.022
b1 0.204 0.304 0.008 0.012
D 10.92 0.430
E 7.95 9.75 0.313 0.384
e 2.54 0.100
e3 7.62 0.300
e4 7.62 0.300
F 6.6 0.260
I 5.08 0.200
L 3.18 3.81 0.125 0.150
Z 1.52 0.060
DocID13862 Rev 2 13/15
L6384E Package information
15
Figure 16. SO-8 package outline
Table 9. SO-8 package mechanical data
Symbol
Dimensions (mm) Dimensions (inch)
Min. Typ. Max. Min. Typ. Max.
A 1.750 0.0689
A1 0.100 0.250 0.0039 0.0098
A2 1.250 0.0492
b 0.280 0.480 0.0110 0.0189
c 0.170 0.230 0.0067 0.0091
D(1)
1. Dimension “D” does not include mold flash, protrusions or gate burrs. Mold flash, protrusions or gate burrs
shall not exceed 0.15 mm in total (both sides).
4.800 4.900 5.000 0.1890 0.1929 0.1969
E 5.800 6.000 6.200 0.2283 0.2362 0.2441
E1(2)
2. Dimension “E1” does not include interlead flash or protrusions. Interlead flash or protrusions shall not
exceed 0.25 mm per side.
3.800 3.900 4.000 0.1496 0.1535 0.1575
e 1.270 0.0500
h 0.250 0.500 0.0098 0.0197
L 0.400 1.270 0.0157 0.0500
L1 1.040 0.0409
k 0° 8° 0° 8°
ccc 0.100 0.0039
Revision history L6384E
14/15 DocID13862 Rev 2
8 Revision history
Table 10. Document revision history
Date Revision Changes
12-Oct-2007 1 First release
20-Jun-2014 2
Added Section : Applications on page 1.
Updated Section : Description on page 1 (replaced by new
description).
Updated Table 1: Device summary on page 1 (moved from page 15
to page 1, updated title).
Updated Figure 1: Block diagram on page 3 (moved from page 1 to
page 3, numbered and added title to Section 1: Block diagram on
page 3).
Updated Section 2.1: Absolute maximum ratings on page 4
(removed note below Table 2: Absolute maximum ratings).
Updated Table 5: Pin description on page 5 (updated “Type” of
several pins).
Updated Table 7 on page 6 (updated “Max.” value of IQBS symbol).
Updated Section : CBOOT selection and charging on page 8 (updated
values of “E.g.: HVG”).
Numbered Equation 1 on page 8, Equation 2 on page 8 and
Equation 3 on page 9.
Updated Section 7: Package information on page 12 [updated/added
titles, updated ECOPACK text, reversed order of Figure 15 and
Table 8, Figure 16 and Table 9 (numbered tables), removed 3D
package figures, minor modifications].
Minor modifications throughout document.
DocID13862 Rev 2 15/15
L6384E
15
Please Read Carefully:
Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the
right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any
time, without notice.
All ST products are sold pursuant to ST’s terms and conditions of sale.
Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no
liability whatsoever relating to the choice, selection or use of the ST products and services described herein.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this
document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products
or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such
third party products or services or any intellectual property contained therein.
UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED
WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED
WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS
OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT.
ST PRODUCTS ARE NOT DESIGNED OR AUTHORIZED FOR USE IN: (A) SAFETY CRITICAL APPLICATIONS SUCH AS LIFE
SUPPORTING, ACTIVE IMPLANTED DEVICES OR SYSTEMS WITH PRODUCT FUNCTIONAL SAFETY REQUIREMENTS; (B)
AERONAUTIC APPLICATIONS; (C) AUTOMOTIVE APPLICATIONS OR ENVIRONMENTS, AND/OR (D) AEROSPACE APPLICATIONS
OR ENVIRONMENTS. WHERE ST PRODUCTS ARE NOT DESIGNED FOR SUCH USE, THE PURCHASER SHALL USE PRODUCTS AT
PURCHASER’S SOLE RISK, EVEN IF ST HAS BEEN INFORMED IN WRITING OF SUCH USAGE, UNLESS A PRODUCT IS
EXPRESSLY DESIGNATED BY ST AS BEING INTENDED FOR “AUTOMOTIVE, AUTOMOTIVE SAFETY OR MEDICAL” INDUSTRY
DOMAINS ACCORDING TO ST PRODUCT DESIGN SPECIFICATIONS. PRODUCTS FORMALLY ESCC, QML OR JAN QUALIFIED ARE
DEEMED SUITABLE FOR USE IN AEROSPACE BY THE CORRESPONDING GOVERNMENTAL AGENCY.
Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void
any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any
liability of ST.
ST and the ST logo are trademarks or registered trademarks of ST in various countries.
Information in this document supersedes and replaces all information previously supplied.
The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners.
© 2014 STMicroelectronics - All rights reserved
STMicroelectronics group of companies
Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan -
Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America
www.st.com
ULQ2001
ULQ2003 - ULQ2004
Seven Darlington array
Features
■ Seven Darlington per package
■ Extended temperature range: -40 to 105 °C
■ Output current 500 mA per driver (600 mA
peak)
■ Output voltage 50 V
■ Automotive Grade product in SO16 package
■ Integrated suppression diodes for inductive
loads
■ Outputs can be paralleled for higher current
■ TTL/CMOS/PMOS/DTL compatible inputs
■ Inputs pinned opposite outputs to simplify
layout
Description
The ULQ2001, ULQ2003 and ULQ2004 are high
voltage, high current Darlington arrays each
containing seven open collector Darlington pairs
with common emitters. Each channel rated at 500
mA and can withstand peak currents of 600 mA.
Suppression diodes are included for inductive
load driving and the inputs are pinned opposite
the outputs to simplify board layout. The versions
interface to all common logic families. These
versatile devices are useful for driving a wide
range of loads including solenoids, relays DC
motors, LED displays filament lamps, thermal
print-heads and high power buffers. The
ULQ2001A/2003A and 2004A are supplied in 16
pin plastic DIP packages with a copper leadframe
to reduce thermal resistance. They are
available also in small outline package (SO16) as
ULQ2003D1/2004D1. The ULQ2003 is available
as Automotive Grade in SO16 package. The
commercial part numbers is shown in the order
codes. This device is qualified according to the
specification AEC-Q100 of the Automotive
market, in the temperature range -40 °C to 125 °C
and the statistical tests PAT, SYL, SBL are
performed.
DIP-16 SO16
(Narrow)
Table 1. Device summary
Part numbers Order codes Description Packages
ULQ2001 ULQ2001A
General purpose, DTL, TTL,
PMOS, CMOS
DIP-16
ULQ2003 ULQ2003A 5 V TTL, CMOS DIP-16
ULQ2004 ULQ2004A 6–15 V CMOS, PMOS DIP-16
ULQ2003 ULQ2003D1013TR SO16 in tape and reel
ULQ2003 ULQ2003D1013TRY (1) SO16 in tape and reel
ULQ2004 ULQ2004D1013TR SO16 in tape and reel
1. Automotive Grade products.
www.st.com
Contents ULQ2001, ULQ2003, ULQ2004
2/14 Doc ID 1537 Rev 6
Contents
1 Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Pin configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
3 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
4 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
5 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
6 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
7 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
ULQ2001, ULQ2003, ULQ2004 Diagram
Doc ID 1537 Rev 6 3/14
1 Diagram
Figure 1. Schematic diagram
ULQ2001 (each driver) ULQ2003 (each driver)
ULQ2004 (each driver)
Pin configuration ULQ2001, ULQ2003, ULQ2004
4/14 Doc ID 1537 Rev 6
2 Pin configuration
Figure 2. Pin connections (top view)
ULQ2001, ULQ2003, ULQ2004 Maximum ratings
Doc ID 1537 Rev 6 5/14
3 Maximum ratings
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
VO Output voltage 50 V
VIN Input voltage (for ULQ2003A/D1 - 2004A/D1) 30 V
IC Continuous collector current 500 mA
IB Continuous base current 25 mA
TA Operating ambient temperature range -40 to 105 °C
TSTG Storage temperature range -55 to 150 °C
TJ Junction temperature 150 °C
Table 3. Thermal data
Symbol Parameter DIP-16 SO16 Unit
RthJA Thermal resistance junction-ambient, max. 70 120 °C/W
Electrical characteristics ULQ2001, ULQ2003, ULQ2004
6/14 Doc ID 1537 Rev 6
4 Electrical characteristics
TJ = -40 to 105 °C for DIP16 unless otherwise specified,
TJ = -25 to 105 °C for SO16 unless otherwise specified.
Table 4. Electrical characteristics
Symbol Parameter Test conditions Min. Typ. Max. Unit
ICEX Output leakage current
VCE = 50V, (Figure 3) 50
μA
TJ = 105°C, VCE= 50V (Figure 3) 100
TJ = 105°C for ULQ2004, VCE= 50V,
VI = 1V (Figure 4)
500
VCE(SAT)
Collector-emitter saturation
voltage (Figure 5)
IC = 100mA, IB = 250μA 0.9 1.1
IC = 200mA, IB= 350μA 1.1 1.3 V
IC = 350mA, IB= 500μA 1.3 1.6
II(ON) Input current (Figure 6)
for ULQ2003, VI = 3.85V 0.93 1.35
for ULQ2004, VI = 5V 0.35 0.5 mA
for ULQ2004, VI = 12V 1 1.45
II(OFF) Input current (Figure 7) TJ = 105°C, IC = 500μA 50 65 μA
VI(ON) Input voltage (Figure 8)
for ULQ2003
VCE= 2V, IC = 200mA
VCE= 2V, IC = 250mA
VCE= 2V, IC = 300mA
for ULQ2004
VCE= 2V, IC = 125mA
VCE= 2V, IC = 200mA
VCE= 2V, IC = 275mA
VCE= 2V, IC = 350mA
2.4
2.7
3
5
6
7
8
V
hFE
DC forward current gain
(Figure 5)
for ULQ2001, VCE = 2V,
IC = 350mA
1000
CI Input capacitance 15 25 (1) pF
tPLH Turn-on delay time 0.5 VI to 0.5VO 0.25 1 (1) μs
tPHL Turn-off delay time 0.5 VI to 0.5VO 0.25 1 (1) μs
IR
Clamp diode leakage current
(Figure 9)
VR = 50V 50
μA
TJ = 105°C, VR = 50V 100
VF
Clamp diode forward voltage
(Figure 10)
IF = 350mA 1.7 2 V
1. Guaranteed by design.
ULQ2001, ULQ2003, ULQ2004 Electrical characteristics
Doc ID 1537 Rev 6 7/14
TJ = -40 to 125 °C for SO16 unless otherwise specified.
Table 5. Electrical characteristics for ULQ2003D1013TRY (Automotive Grade)
Symbol Parameter Test conditions Min. Typ. Max. Unit
ICEX
Output leakage current
(Figure 3)
VCE = 50V 50 μA
VCE(SAT)
Collector-emitter saturation
voltage (Figure 5)
IC = 100mA, IB = 250μA 0.9 1.1
IC = 200mA, IB= 350μA 1.1 1.3 V
IC = 350mA, IB= 500μA 1.3 1.6
II(ON) Input current (Figure 6) VI = 3.85V 0.93 1.35 mA
II(OFF) Input current (Figure 7) IC = 500μA 50 65 μA
VI(ON) Input voltage (Figure 8)
VCE = 2V, IC = 200mA
VCE = 2V, IC = 250mA
VCE = 2V,IC = 300mA
2.4
2.7
3
V
CI Input capacitance 15 25 pF
tPLH Turn-on delay time 0.5 VI to 0.5VO 0.25 1 μs
tPHL Turn-off delay time 0.5 VI to 0.5VO 0.25 1 μs
IR
Clamp diode leakage current
(Figure 9)
VR = 50V 50 μA
VF
Clamp diode forward voltage
(Figure 10)
IF = 350mA 1.7 2 V
Test circuits ULQ2001, ULQ2003, ULQ2004
8/14 Doc ID 1537 Rev 6
5 Test circuits
Figure 3. Output leakage current Figure 4. Output leakage current (for
ULN2002 only)
Figure 5. Collector-emitter saturation voltage Figure 6. Input current (ON)
Figure 7. Input current (OFF) Figure 8. Input voltage
ULQ2001, ULQ2003, ULQ2004 Test circuits
Doc ID 1537 Rev 6 9/14
Figure 9. Clamp diode leakage current Figure 10. Clamp diode forward voltage
Package mechanical data ULQ2001, ULQ2003, ULQ2004
10/14 Doc ID 1537 Rev 6
6 Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
ULQ2001, ULQ2003, ULQ2004 Package mechanical data
Doc ID 1537 Rev 6 11/14
Dim.
mm. inch.
Min. Typ. Max. Min. Typ. Max.
a1 0.51 0.020
B 0.77 1.65 0.030 0.065
b 0.5 0.020
b1 0.25 0.010
D 20 0.787
E 8.5 0.335
e 2.54 0.100
e3 17.78 0.700
F 7.1 0.280
I 5.1 0.201
L 3.3 0.130
Z 1.27 0.050
Plastic DIP-16 (0.25) mechanical data
P001C
Package mechanical data ULQ2001, ULQ2003, ULQ2004
12/14 Doc ID 1537 Rev 6
OUTLINE AND
MECHANICAL DATA
DIM.
mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 1.75 0.069
a1 0.1 0.25 0.004 0.009
a2 1.6 0.063
b 0.35 0.46 0.014 0.018
b1 0.19 0.25 0.007 0.010
C 0.5 0.020
c1 45° (typ.)
D(1) 9.8 10 0.386 0.394
E 5.8 6.2 0.228 0.244
e 1.27 0.050
e3 8.89 0.350
F(1) 3.8 4.0 0.150 0.157
G 4.60 5.30 0.181 0.208
L 0.4 1.27 0.150 0.050
M 0.62 0.024
S 8° (max.)
(1) "D" and "F" do not include mold flash or protrusions - Mold
flash or protrusions shall not exceed 0.15mm (.006inc.)
SO16 (Narrow)
0016020 D
ULQ2001, ULQ2003, ULQ2004 Revision history
Doc ID 1537 Rev 6 13/14
7 Revision history
Table 6. Document revision history
Date Revision Changes
05-Dec-2006 2 Order codes updated.
23-May-2007 3 Order codes updated.
17-Apr-2008 4 Added new order codes for Automotive grade products see Table 1 on page 1.
25-Aug-2008 5 Modified: Table 4 on page 6 and Table 5 on page 7.
11-Feb-2011 6 Modified: TJ = -25 to 105 °C Table 4 on page 6.
ULQ2001, ULQ2003, ULQ2004
14/14 Doc ID 1537 Rev 6
Please Read Carefully:
Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the
right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any
time, without notice.
All ST products are sold pursuant to ST’s terms and conditions of sale.
Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no
liability whatsoever relating to the choice, selection or use of the ST products and services described herein.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this
document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products
or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such
third party products or services or any intellectual property contained therein.
UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED
WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED
WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS
OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT.
UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT
RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING
APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY,
DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE
GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER’S OWN RISK.
Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void
any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any
liability of ST.
ST and the ST logo are trademarks or registered trademarks of ST in various countries.
Information in this document supersedes and replaces all information previously supplied.
The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners.
© 2011 STMicroelectronics - All rights reserved
STMicroelectronics group of companies
Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan -
Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America
www.st.com
ULN2001, ULN2002
ULN2003, ULN2004
Seven Darlington array
Datasheet − production data
Features
■ Seven Darlingtons per package
■ Output current 500 mA per driver (600 mA
peak)
■ Output voltage 50 V
■ Integrated suppression diodes for inductive
loads
■ Outputs can be paralleled for higher current
■ TTL/CMOS/PMOS/DTL compatible inputs
■ Inputs pinned opposite outputs to simplify
layout
Description
The ULN2001, ULN2002, ULN2003 and ULN
2004 are high voltage, high current Darlington
arrays each containing seven open collector
Darlington pairs with common emitters. Each
channel rated at 500 mA and can withstand peak
currents of 600 mA. Suppression diodes are
included for inductive load driving and the inputs
are pinned opposite the outputs to simplify board
layout.
The versions interface to all common logic
families:
– ULN2001 (general purpose, DTL, TTL,
PMOS, CMOS)
– ULN2002 (14 - 25 V PMOS)
– ULN2003 (5 V TTL, CMOS)
– ULN2004 (6 - 15 V CMOS, PMOS)
These versatile devices are useful for driving a
wide range of loads including solenoids, relays
DC motors, LED displays filament lamps, thermal
printheads and high power buffers.
The ULN2001A/2002A/2003A and 2004A are
supplied in 16 pin plastic DIP packages with a
copper leadframe to reduce thermal resistance.
They are available also in small outline package
(SO-16) as ULN2001D1/2002D1/2003D1/
2004D1
DIP-16 SO-16
(Narrow)
Table 1. Device summary
Order codes
ULN2001A ULN2001D1013TR
ULN2002A ULN2002D1013TR
ULN2003A ULN2003D1013TR
ULN2004A ULN2004D1013TR
www.st.com
Contents ULN2001, ULN2002, ULN2003, ULN2004
2/16 Doc ID 5279 Rev 8
Contents
1 Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Pin configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
3 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
4 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
5 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
6 Typical performance characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
7 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
8 Order codes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
ULN2001, ULN2002, ULN2003, ULN2004 Diagram
Doc ID 5279 Rev 8 3/16
1 Diagram
Figure 1. Schematic diagram
ULN2001 (each driver) ULN2002 (each driver)
ULN2003 (each driver) ULN2004 (each driver)
Pin configuration ULN2001, ULN2002, ULN2003, ULN2004
4/16 Doc ID 5279 Rev 8
2 Pin configuration
Figure 2. Pin connections (top view)
ULN2001, ULN2002, ULN2003, ULN2004 Maximum ratings
Doc ID 5279 Rev 8 5/16
3 Maximum ratings
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
VO Output voltage 50 V
VI
Input voltage (for ULN2002A/D - 2003A/D -
2004A/D)
30 V
IC Continuous collector current 500 mA
IB Continuous base current 25 mA
TA Operating ambient temperature range - 40 to 85 °C
TSTG Storage temperature range - 55 to 150 °C
TJ Junction temperature 150 °C
Table 3. Thermal data
Symbol Parameter DIP-16 SO-16 Unit
RthJA Thermal resistance junction-ambient, Max. 70 120 °C/W
Electrical characteristics ULN2001, ULN2002, ULN2003, ULN2004
6/16 Doc ID 5279 Rev 8
4 Electrical characteristics
TA = 25 °C unless otherwise specified.
Table 4. Electrical characteristics
Symbol Parameter Test condition Min. Typ. Max. Unit
ICEX Output leakage current
VCE = 50 V, (Figure 3.) 50
μA
TA = 85°C, VCE = 50 V (Figure 3.) 100
TA = 85°C for ULN2002, VCE = 50 V,
VI = 6 V (Figure 4.)
500
TA = 85°C for ULN2002, VCE = 50 V,
VI = 1V (Figure 4.)
500
VCE(SAT)
Collector-emitter saturation
voltage (Figure 5.)
IC = 100 mA, IB = 250 μA 0.9 1.1
IC = 200 mA, IB= 350 μA 1.1 1.3 V
IC = 350 mA, IB= 500 μA 1.3 1.6
II(ON) Input current (Figure 6.)
for ULN2002, VI = 17 V 0.82 1.25
mA
for ULN2003, VI = 3.85 V 0.93 1.35
for ULN2004, VI = 5 V 0.35 0.5
VI = 12 V 1 1.45
II(OFF) Input current (Figure 7.) TA = 85°C, IC = 500 μA 50 65 μA
VI(ON) Input voltage (Figure 8.)
VCE= 2 V, for ULN2002
IC = 300 mA
for ULN2003
IC = 200 mA
IC = 250 mA
IC = 300 mA
for ULN2004
IC = 125 mA
IC = 200 mA
IC = 275 mA
IC = 350 mA
13
2.4
2.7
3
5
6
7
8
V
hFE
DC Forward current gain
(Figure 5.)
for ULN2001, VCE = 2 V,
IC = 350 mA
1000
CI Input capacitance 15 25 pF
tPLH Turn-on delay time 0.5 VI to 0.5 VO 0.25 1 μs
tPHL Turn-off delay time 0.5 VI to 0.5 VO 0.25 1 μs
IR
Clamp diode leakage current
(Figure 9.)
VR = 50 V 50
μA
TA = 85°C, VR = 50 V 100
VF
Clamp diode forward voltage
(Figure 10.)
IF = 350 mA 1.7 2 V
ULN2001, ULN2002, ULN2003, ULN2004 Test circuits
Doc ID 5279 Rev 8 7/16
5 Test circuits
Figure 3. Output leakage current Figure 4. Output leakage current (for
ULN2002 only)
Figure 5. Collector-emitter saturation voltage Figure 6. Input current (ON)
Figure 7. Input current (OFF) Figure 8. Input voltage
Test circuits ULN2001, ULN2002, ULN2003, ULN2004
8/16 Doc ID 5279 Rev 8
Figure 9. Clamp diode leakage current Figure 10. Clamp diode forward voltage
ULN2001, ULN2002, ULN2003, ULN2004 Typical performance characteristics
Doc ID 5279 Rev 8 9/16
6 Typical performance characteristics
Figure 11. Collector current vs. saturation
voltage (TJ = 25°C)
Figure 12. Collector current vs. saturation
voltage
Figure 13. Input current vs. input voltage Figure 14. Input current vs. input voltage
(Ta = 25°C)
Figure 15. Collector current vs. input current Figure 16. hFE vs. output current
IOUT [mA]
85°C
25°C
-30°C
VCESAT [V]
IIN = 500 μA
ULN2003A
Typ
Max
Min
ULN2003A
Ta = 25°C Iout=100mA
Iout=200mA
Iout=300mA
IIN [μA]
I OUT [mA]
-30°C
85°C
25°C
VCE = 2 V
1
10
100
1000
10000
1 10 100 1000
DC Current Transfer Ratio (hFE)
Output current IOUT [mA]
85 °C
-40 °C
25 °C
VCE = 2 V
Typical performance characteristics ULN2001, ULN2002, ULN2003, ULN2004
10/16 Doc ID 5279 Rev 8
Figure 17. Peak collector current vs. duty
cycle (DIP-16)
Figure 18. Peak collector current vs. duty
cycle (SO-16)
0 20 40 60 80 DC
0
100
200
300
400
500
Ic peak
(mA)
Tamb=70°C
(DIP16)
7 6 5 4 3 2
NUMBER OF ACTIVE OUTPUT
D96IN451
0 20 40 60 80 100 DC
0
100
200
300
400
500
Ic peak
(mA)
D96IN452A
7
5
3
2
NUMBER OF ACTIVE OUTPUT
Tamb=70°C
(SO16)
ULN2001, ULN2002, ULN2003, ULN2004 Package mechanical data
Doc ID 5279 Rev 8 11/16
7 Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
Table 5. DIP-16L mechanical data
Dim.
mm.
Min. Typ. Max.
A 5.33
A1 0.38
A2 2.92 3.30 4.95
b 0.36 0.46 0.56
b2 1.14 1.52 1.78
c 0.20 0.25 0.36
D 18067 19.18 19.69
E 7.62 7.87 8.26
E1 6.10 6.35 7.11
e 2.54
e1 17.78
eA 7.62
eB 10.92
L 2.92 3.30 3.81
Package mechanical data ULN2001, ULN2002, ULN2003, ULN2004
12/16 Doc ID 5279 Rev 8
Figure 19. DIP-16L package dimensions
0015895_E
ULN2001, ULN2002, ULN2003, ULN2004 Package mechanical data
Doc ID 5279 Rev 8 13/16
Table 6. SO-16 narrow mechanical data
Dim.
mm. inch.
Min. Typ. Max. Min. Typ. Max.
A 1.75 0.069
a1 0.1 0.25 0.004 0.009
a2 1.6 0.063
b 0.35 0.46 0.014 0.018
b1 0.19 0.25 0.007 0.010
C 0.5 0.020
c1 45° (typ.)
D(1) 9.8 10 0.386 0.394
E 5.8 6.2 0.228 0.244
e 1.27 0.050
e3 8.89 0.350
F(1) 3.8 4.0 0.150 0.157
G 4.60 5.30 0.181 0.208
L 0.4 1.27 0.150 0.050
M 0.62 0.024
S 8° (max.)
Figure 20. SO-16 package dimensions
Order codes ULN2001, ULN2002, ULN2003, ULN2004
14/16 Doc ID 5279 Rev 8
8 Order codes
Table 7. Order codes
Part numbers Packages
ULN2001A DIP-16
ULN2002A DIP-16
ULN2003A DIP-16
ULN2004A DIP-16
ULN2001D1013TR SO-16 in tape and reel
ULN2002D1013TR SO-16 in tape and reel
ULN2003D1013TR SO-16 in tape and reel
ULN2004D1013TR SO-16 in tape and reel
ULN2001, ULN2002, ULN2003, ULN2004 Revision history
Doc ID 5279 Rev 8 15/16
9 Revision history
Table 8. Revision history
Date Revision Changes
05-Dec-2006 5 Order code updated and document reformatted.
28-Aug-2007 6 Added Table 1 in cover page.
07-May-2012 7
Modified: Figure 12 on page 9.
Added: Figure 13, 14, 15 and Figure 16 on page 9.
01-Jun-2012 8
Updated: DIP-16L package mechanical data Table 5 on page 11 and
Figure 19 on page 12.
ULN2001, ULN2002, ULN2003, ULN2004
16/16 Doc ID 5279 Rev 8
Please Read Carefully:
Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the
right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any
time, without notice.
All ST products are sold pursuant to ST’s terms and conditions of sale.
Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no
liability whatsoever relating to the choice, selection or use of the ST products and services described herein.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this
document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products
or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such
third party products or services or any intellectual property contained therein.
UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED
WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED
WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS
OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT.
UNLESS EXPRESSLY APPROVED IN WRITING BY TWO AUTHORIZED ST REPRESENTATIVES, ST PRODUCTS ARE NOT
RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING
APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY,
DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE
GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER’S OWN RISK.
Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void
any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any
liability of ST.
ST and the ST logo are trademarks or registered trademarks of ST in various countries.
Information in this document supersedes and replaces all information previously supplied.
The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners.
© 2012 STMicroelectronics - All rights reserved
STMicroelectronics group of companies
Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan -
Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America
www.st.com
Smart street lighting solutions
GPRS/3G
network
Data flow
Contents
Goals and design of street lighting
Smart street lighting
From incandescent lamps to HID and LED: today’s highest luminous performances
The advantages of electronic ballasts for HID lamps: ST’s solutions
Using LEDs in street lighting: ST’s solutions
Smart communication system: wireless and wired
Real-time lamppost fall detection using MEMS
A complete solution for smart street lighting
Goals and design of street lighting
Goals
Design principles
Ensure maximum visual safety for drivers and pedestrians
Improve visibility of people and objects
Provide the best light quality and the highest color rendering
Make residential areas surer
Enhance street furniture appearance
Energy efficient
Reliable and safe
Technically advanced
Cost effective
Convenient for maintenance
What is smart street lighting?
Enables smart cities with highly-efficient street light driving, advanced
monitoring and remote control
GPRS/3G
network
Data flow
Lamp controller with
connectivity
PDA with RF
connectivity
District data
concentrator
Services
center
Reduced maintenance costs
Reduced energy consumption
Performance and energy-consumption data at your fingertips
Reduced greenhouse gas emissions
Greater citizen satisfaction
Why smart street lighting?
From incandescent lamps to HID, LED
Inefficient light sources such as incandescent lamps will be phased out
LED technology will push the lighting market
HID and HB LED offer outstanding luminous efficiency
Source: U.S Department of energy 2004, Philips Lighting 2005
HID, LED: highest performances
Ignition at very high voltage
Warm-up phase is required
Steady-state phase with lamp power control is needed
Different performances according to the metals and filler materials
High pressure sodium (up to 150 lm/W)
Metal halide (up to 110 lm/W)
Mercury vapor (up to 60 lm/W)
A LED is activated when a DC voltage is applied
The luminous flux and dominant wavelength are controlled by average current
The ripple current has to be kept at acceptable levels
Dimming can be implemented through digital or analog control
Best LED efficiency: 150 lm/W High intensity discharge (HID) Light emitting diode (LED) Source: OSRAM
Electronic ballasts for HID lamps
Increased lamp life
Enhanced lumen constancy with life
10-15% lower energy consumption than magnetic ballasts
More reliable lamp operation (end of life protection)
Electronic ballasts are smaller than electromagnetic ballasts
Electronics allow smart communication
Lamp controller with connectivity
Source: Philips Lighting
Input: 185 to 265 VAC, 50 Hz
Load: 150 W MH or HPS lamp
PF = 0.99, THD = 2.8%
Dimmable
Average efficiency: 90%
EN55015 compliant
Remote control interfacing by PLM
150 W electronic ballast for HID lamps
ESICOM order code: STEVAL-ILH005V2* Description and purpose
Key features
2-stage electronic ballast for 150 W HID (high-intensity discharge) lamp, including a boost converter (PFC) working in transition mode (TM), and a full bridge inverter to drive a lamp with a low-frequency square wave Key products STF10NM60ND; STGF10NC60SD; STTH1L06; STTH1R06; VIPer16L; L6562A; L6388E; TS272; ST7FLITE39F2 * Available in Q1/2012
Wide input voltage range
High power factor (up to 0.998) and very low THD (5%)
PFC boost working in TM
Half bridge based on power MOSFETs
Controls the igniter circuit
Implements buck converter in TM
Provides alternate low frequency square wave current
Overvoltage and short-circuit protection
Suitable for HPS and MH lamps
70 W electronic ballast for HID lamps ESICOM order code: STEVAL-ILH004V1* Description and purpose Key features
Fully digital ballast to drive 70 W HID lamps, based on two ICs, the digital combo driver L6382D5 and a low-cost 8-bit microcontroller, able to manage the PFC and the half bridge stage
Key products
L6382D5; STF8NM60ND; STTH1L06;
VIPer16L; ST7LITE49K2; LIC01. * Available in Q1/2012
Source of graphic: RUUD lighting
LED HID
Using LEDs in street lighting
The green way to lowering energy costs
Low power consumption
Long lumen constancy
Long and predictable lifetime
Light emission can be easily redirected
Reliability (robust against shock and vibration)
Environment friendly (CO2 saving and mercury free)
Quick turn on/off and dimming
100 W and above
130 W LED driver based on L6562AT and L6599AT
Input mains range: 85 to 305 VAC
SMPS output voltage: 48 V at 2.7 A
Long life time, electrolytic capacitors are not used
Mains harmonics: meet EN61000-3-2 Class-C
Efficiency at full load: > 93%
EMI: meets EN55022-Class-B, EN55015
Digital dimming
ESICOM order code: EVL130W-STRLIG, EVL130W-SL-EU, EVL6562A-LED Description and purpose Key features The system is composed of three stages:
a front-end PFC
an LLC resonant converter
an inverse buck converter The key benefits are very high efficiency, long term reliability and small form factor
Key products
L6562AT, L6599AT, STF21NM60N, STD10NM60N, SEA05, STTH3L06U, STPS1L60A, STPS2H100A, STN3NF06
Wide input voltage range: 88 to 265 VAC
LED current set to 350 mA, 700 mA and 1 A
High efficiency (~90%) and high power factor
Universal PWM input for dimming (ext. board required)
Non-isolated SMPS
Brightness regulation between 0% and 100%
EMI filter implemented
EN55015 and EN61000-3-2 compliant
80 W and above
80 W offline LED driver with dimming based on L6562A
ESICOM order code: STEVAL-ILL013V1
Description and purpose Key features
An innovative non-isolated solution for driving LEDs where high power factor, high efficiency and individual LED brightness regulation is required
PFC boost, inverse buck converter Key products L6562A, STTH1L06A, STF10NM50N, STP8NM50N , STPSC806D, BUX87
Input voltage range: 185 to 265 VAC
Able to drive single LED String
Provides 350 mA to 0.5 A constant current for LED
Max output voltage: 130 VDC
No input electrolytic capacitor
Efficiency: from 91% to 92.5%
PF > 0.95
Maximum 2fLINE output ripple: 1.0%
Up to 75 W ESICOM order code: STEVAL-ILL042V1* Description and purpose Key features Key products L6562AT; STP7N95K3; TSM101; 1.5KE350A; STTH1L06; STTH2L06
Single-stage isolated solution based on L6562AT and TSM101, offering high performance with a simple and reliable design for LED street lighting
High power factor flyback
60 W offline LED driver for single LED string based on L6562AT
* Available in Q1/2012
Digital constant-current controller for multi-string LED driving based on STM8S
Input DC bus voltage: 48 V
Independent LED string average current control
Inverse buck topology
System power: 120 W
Switching frequency: 100 kHz
Ripple current <10%
Global dimming from 0% to 100% at 225 Hz (PWM dimming)
Independent analog dimming on 4 channels
Short-circuit protection
Innovative multi-string LED driving
ESICOM order code: STEVAL-ILL031V1 Description and purpose Key features Key products STM8S208RB; STPS1L60; STN3NF06
Complete platform (HW/SW) for LED multi-string constant-current control based on an innovative methodology
Each LED string can be dimmed and brightened independently
System can be interfaced with ZigBee or PLM modules for remote control
Smart communication
GPRS/3G
network
Data flow
Dimming level, adjust on/off timing, lamp failure, consumed
energy, lamp-burning hours, lamppost tilt, etc.
Highway: simple linear topology City centre: complex topology
Wireless network solution STM32W108xx: 32-bit MCU ARM Cortex-M3 ZigBee system on chip SPZB32W1x2.1: ZigBee PRO modules based on the STM32W chipset M24LR64-R: 64-Kbit Dual Interface EEPROM (I²C and ISO 15693 RF protocol at 13.56 MHz)
IEEE 802.15.4 - ZigBee® network
A mesh topology is used to reach the data concentrator
A network for each district is identified by its PANID
Lamppost’s node configuration using RFID EEPROM which can be written/read during both manufacturing process and installation procedure by the PDA C
R1 R2 N2 R3 N4 N3 N1 Data concentrator/ network coordinator Router lamppost End node lamppost STM32W or SPZB32W1x2.1
M24LR64-R Lamppost communication mode
PLC wired network solution STM32F103xx: 32-bit MCU ARM Cortex-M3 microcontroller M24LR64-R: 64-Kbit Dual Interface EEPROM (I²C and ISO 15693 RF protocol at 13.56 MHz) ST7570: IEC 61334-5-1 compliant PLM ST7540: FSK stripped down power line transceiver
IEC 61334-5-1 power line communication network (ST7570) or proprietary protocol (ST7540)
Configured to work in CENELEC band B or C to avoid interference with AMR network
Data repeaters are used to reach the data concentrator
A network for each district identified by unique identification
Node configuration using RFID EEPROM which can be written/read during both manufacturing process and installation procedure by the PDA C R1 R2 N2 R3 N4 N3 N1 Data concentrator/ network initiator Repeater lamppost
End node lamppost STM32F
ST7570 or ST7540 Lamppost communication mode M24LR64-R
Data concentrator STM32F107xx: 32-bit MCU ARM Cortex-M3 microcontroller with Ethernet M24LR64-R: 64-Kbit Dual Interface EEPROM (I²C and ISO 15693 RF protocol at 13.56 MHz) ST7570: IEC 61334-5-1 compliant PLM ST7540: FSK stripped down power line transceiver STM32W108xx: 32-bit MCU ARM Cortex-M3 ZigBee system on chip SPZB32W1x2.1: ZigBee PRO modules based on the STM32W chipset M24128-Bxx: 128-Kbit EEPROM
One concentrator for each district STM32F ST7570 or ST7540 M24LR64-R STM32W or SPZB32W1x2.1 GPRS module M24128-Bxx PLM option
ZigBee® option
Real-time lamppost fall detection
STM32F LIS331DLH STM32W or SPZB32W1x2.1
One low-g 3-axis accelerometer for each lamppost
Tilt angle measurement
Lamppost fall detection
Key application benefits
Road safety
Reduced maintenance cost
150 W HID lamp ballast + ST7540-based communication for networked street lighting
Solutions for smart street lighting
Lamp driver and controller
150 W high-efficiency HID lamp ballast
High reliability (up to 85°C ambient temperature)
Dimmable and EN55015 compliant
Suitable for HPS and MH lamps
Communication section
Remote control on power line
Routing policies to cover long distances without dedicated hardware resources
Allows remote turn-on/off, dimming, lamp and ballast status monitoring Description and purpose Key features
Innovative networked street lighting system with remote control and monitoring based on PLM, including a dedicated PC GUI * Available in Q1/2012 ESICOM order code: STEVAL-ILH005V2* STEVAL-IHP003V1
Thank you
For more information, visit our website:
www.st.com
Or follow the links below:
LED and general lighting
HID lighting
LED lighting
Evaluation boards
LM350
Three-terminal 3 A adjustable voltage regulators
Features
■ Guaranteed 3 A output current
■ Adjustable output down to 1.2 V
■ Line regulation typically 0.005 %/V
■ Load regulation typically 0.1 %
■ Guaranteed thermal regulation
■ Current limit constant with temperature
■ Standard 3-lead transistor package
TO-3
Table 1. Device summary
Order codes
TO-3 Temperature range
LM350K 0 to 125 °C
www.st.com
Contents LM350
2/14
Contents
1 Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Pin configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
3 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
4 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
5 Typical performance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
6 Application hints . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
6.1 External capacitors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
6.2 Load regulation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
6.3 Protection diodes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
7 Application circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
8 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
LM350 Diagram
3/14
1 Diagram
Figure 1. Schematic diagram
Pin configuration LM350
4/14
2 Pin configuration
Figure 2. Pin connections (bottom view)
LM350 Maximum ratings
5/14
3 Maximum ratings
Note: Absolute maximum ratings are those values beyond which damage to the device may occur.
Functional operation under these condition is not implied
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
PD Power dissipation Internally limited
VI - VO Input-output voltage differential 35 V
TSTG Storage temperature range -65 to 150 °C
TLEAD lead temperature (Soldering, 10 seconds) 300 °C
TOP Operating junction temperature range 0 to 125 °C
Table 3. Thermal data
Symbol Parameter Value Unit
RthJC Thermal resistance junction-case 1.5 °C/W
RthJA Thermal resistance junction-ambient 35 °C/W
Electrical characteristics LM350
6/14
4 Electrical characteristics
Table 4. Electrical characteristics (VI -VO = 5V, IO = 1.5 A. Although power dissipation is internally
limited, these specifications apply to power dissipation up to 30 W, unless otherwise
specified)
Symbol Parameter Test conditions Min. Typ. Max. Unit
KVI Line regulation (1)
1. Regulation is measured at constant junction temperature. Changes in output voltage due to heating effects are taken into
account separately by thermal rejection.
Ta = 25°C, VI - VO = 3 to 35 V 0.005 0.03 %/V
KVO Load regulation (1) Ta = 25°C
IO = 10 mA to 3 A
VO ≤ 5 V 5 25 mV
VO ≥ 5 V 0.1 0.5 %
Thermal regulation Pulse = 20 ms 0.002 0.02 %/W
IADJ Adjustment pin current 50 100 μA
ΔIADJ
Adjustment pin current
change
IL = 10 mA to 3 A, VI - VO = 3 to 35 V 0.2 5 μA
VREF Reference voltage
VI - VO = 3 to 35 V, IO = 10 mA to 3 A
P ≤ 30 W
1.19 1.24 1.29 V
KVI Line regulation (1) VI - VO = 3 to 35 V 0.02 0.05 %/V
KVO Load regulation (1) IO = 10 mA to 3 A
VO ≤ 5 V 20 70 mV
VO ≥ 5 V 0.3 1.5 %
KVT Temperature stability TJ = TMIN to TMAX 1 %
IO(MIN) Minimum load current VI - VO ≤ 35 V 3.5 10 mA
IO(MAX) Current limit VI - VO ≤ 10 V
DC 3 4.5
A
VI - VO = 30 V 1
VNO
RMS output noise
(% of VO)
Ta = 25°C, f = 10 Hz to 10 kHz 0.001 %
RVF Ripple rejection ratio
VO = 10 V, f = 120 Hz 65
dB
CADJ = 10 μF 66 86
KVH Long term stability Ta = 125°C 0.3 1 %
LM350 Typical performance
7/14
5 Typical performance
Δ Needed if device is far from filter capacitors.
* Optional-improves transient response. Output capacitors in the range of 1 μF to 100 μF of aluminium or
tantalum electrolytic are commonly used to provide improved output impedance and rejection of transients
** VO = 1.25 V (1 + R2/R1)
Figure 3. 1.2 V to 25 V adjustable regulator
Application hints LM350
8/14
6 Application hints
In operation, the LM350 develops a nominal 1.25 V reference voltage, V(REF), between the
output and adjustment terminal. The reference voltage is impressed across program resistor
R1 and, since the voltage is constant, a constant current I1 then flows through the output set
resistor R2, giving an output voltage of:
VO = V(REF) (1+ R2 / R1) + IADJ x R2.
Since the 50 μA current from the adjustment terminal represents an error term, the LM350
was designed to minimize IADJ and make it very constant with line and load changes. To do
this, all quiescent operating current is returned to the output establishing a minimum load
current requirement. If there is insufficient load on the output, the output will rise.
6.1 External capacitors
An input bypass capacitor is recommended. A 0.1 μF disc or 1 μF solid tantalum on the input
is suitable input by passing for almost all applications. The device is more sensitive to the
absence of input bypassing when adjustment or output capacitors are used by the above
values will eliminate the possibility of problems.
The adjustment terminal can be bypassed to ground on the LM350 to improve ripple
rejection. This bypass capacitor prevents ripple form being amplified as the output voltage is
increased. With a 10 μF bypass capacitor 75 dB ripple rejection is obtainable at any output
level. Increases over 20 μF do not appreciably improve the ripple rejection at frequencies
above 120 Hz. If the bypass capacitor is used, it is sometimes necessary to include
protection diodes to prevent the capacitor from discharging through internal low current
paths and damaging the device.
In general, the best type of capacitors to use are solid tantalum. Solid tantalum capacitors
have low impedance even at high frequencies. Depending upon capacitor construction, it
takes about 25 μF in aluminium electrolytic to equal 1 μF solid tantalum at high frequencies.
Ceramic capacitors are also good at high frequencies, but some types have a large
Figure 4. Circuit
LM350 Application hints
9/14
decrease in capacitance at frequencies around 0.5 MHz. For this reason, 0.01 μF disc may
seem to work better than a 0.1 μF disc as a bypass.
Although the LM350 is stable with no output capacitors, like any feedback circuit, certain
values of external capacitance can cause excessive ringing. This occurs with values
between 500 pF and 5000 pF. A 1 μF solid tantalum (or 25 μF aluminium electrolytic) on the
output swamps this effect and insures stability.
6.2 Load regulation
The LM350 is capable of providing extremely good load regulation but a few precautions are
needed to obtain maximum performance. The current set resistor connected between the
adjustment terminal and the output terminal (usually 240 Ω) should be tied directly to the
output of the regulator rather than near the load. This eliminates line drops from appearing
effectively in series with the reference and degrading regulation. For example, a 15 V
regulator with 0.05 Ω resistance between the regulator and load will have a load regulation
due to line resistance of 0.05 Ω x IL. If the set resistor is connected near the load the
effective line resistance will be 0.05 Ω (1 + R2/R1) or in this case, 11.5 times worse.
Figure 5 shows the effect of resistance between the regulator and 140 Ω set resistor. With
the TO-3 package, it is easy to minimize the resistance from the case to the set resistor, by
using 2 separate leads to the case. The ground of R2 can be returned near the ground of the
load to provide remote ground sensing and improve load regulation.
6.3 Protection diodes
When external capacitors are used with any IC regulator it is sometimes necessary to add
protection diodes to prevent the capacitors from discharging through low current points into
the regulator. Most 20 μF capacitors have low enough internal series resistance to deliver
20 A spikes when shorted. Although the surge is short, there is enough energy to damage
parts of the IC.
When an output capacitor is connected to a regulator and the input is shorted, the output
capacitor will discharge into the output of the regulator. The discharge current depends on
the value of the capacitor, the output voltage of the regulator, and the rate of decrease of VI.
In the LM350 this discharge path is through a large junction that is able to sustain 25 A
surge with no problem. This is not true of other types of positive regulators. For output
capacitors of 100 μF or less at output of 15 V or less, there is no need to use diodes.
The bypass capacitor on the adjustment terminal can discharge through a low current
junction. Discharge occurs when either the input or output is shorted. Internal to the LM350
is a 50 Ω resistor which limits the peak discharge current. No protection is needed for output
voltages of 25 V or less and 10 μF capacitance. Figure 6 shows an LM350 with protection
diodes included for use with outputs greater than 25 V and high values of output
capacitance.
Application circuits LM350
10/14
7 Application circuits
Figure 5. Regulator with line resistance in output lead
Figure 6. Regulator with protection diodes
LM350 Package mechanical data
11/14
8 Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a lead-free second level interconnect. The category of
second Level Interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com.
Package mechanical data LM350
12/14
Dim.
mm. inch.
Min. Typ. Max. Min. Typ. Max.
A 11.85 0.466
B 0.96 1.05 1.10 0.037 0.041 0.043
C 1.70 0.066
D 8.7 0.342
E 20.0 0.787
G 10.9 0.429
N 16.9 0.665
P 26.2 1.031
R 3.88 4.09 0.152 0.161
U 39.5 1.555
V 30.10 1.185
TO-3 mechanical data
P003C/C
E
B
R
C
P A D
G
N
V
U
O
LM350 Revision history
13/14
9 Revision history
Table 5. Document revision history
Date Revision Changes
29-Sep-2006 1
11-Feb-2008 2 Added: Table 1 on page 1.
LM350
14/14
Please Read Carefully:
Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the
right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any
time, without notice.
All ST products are sold pursuant to ST’s terms and conditions of sale.
Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no
liability whatsoever relating to the choice, selection or use of the ST products and services described herein.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this
document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products
or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such
third party products or services or any intellectual property contained therein.
UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED
WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED
WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS
OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT.
UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT
RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING
APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY,
DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE
GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER’S OWN RISK.
Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void
any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any
liability of ST.
ST and the ST logo are trademarks or registered trademarks of ST in various countries.
Information in this document supersedes and replaces all information previously supplied.
The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners.
© 2008 STMicroelectronics - All rights reserved
STMicroelectronics group of companies
Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan -
Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America
www.st.com
VND920P-E
Double channel high-side driver
Features
■ ECOPACK®: lead free and RoHS compliant
■ Automotive Grade: compliance with AEC
guidelines
■ Very low standby current
■ CMOS compatible input
■ Proportional load current sense
■ Current sense disable
■ Thermal shutdown protection and diagnosis
■ Undervoltage shutdown
■ Overvoltage clamp
■ Load current limitation
Description
The VND920P-E is a double chip device
designed in STMicroelectronics™ VIPower ™
M0-3 technology. The VND920P-E is intended for
driving any type of load with one side connected
to ground. The active VCC pin voltage clamp
protects the device against low energy spikes
(see ISO7637 transient compatibility table). Active
current limitation combined with thermal
shutdown and automatic restart protects the
device against overload.
The device integrates an analog current sense
output which delivers a current proportional to the
load current. The device automatically turns off in
the case where the ground pin becomes
disconnected.
Type RDS(on) IOUT VCC
VND920P-E 16 mΩ 35 A(1)
1. Per channel with all the output pins connected to the
PCB.
36 V
SO-28 (double island)
Table 1. Device summary
Package
Order codes
Tube Tape and reel
SO-28 VND920P-E VND920PTR-E
www.st.com
Contents VND920P-E
2/26 Doc ID 10898 Rev 5
Contents
1 Block diagram and pin description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
2 Electrical specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
2.1 Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
2.2 Thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
2.3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
2.4 Electrical characteristics curves . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
3 Application information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
3.1 GND protection network against reverse battery . . . . . . . . . . . . . . . . . . . 17
3.1.1 Solution 1: resistor in the ground line (RGND only) . . . . . . . . . . . . . . . . 17
3.1.2 Solution 2: diode (DGND) in the ground line . . . . . . . . . . . . . . . . . . . . . 18
3.2 Load dump protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
3.3 MCU I/Os protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
3.4 Maximum demagnetization energy (VCC = 13.5 V) . . . . . . . . . . . . . . . . . 19
4 Package and PCB thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
4.1 SO-28 thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
5 Package and packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
5.1 ECOPACK® packages . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
5.2 SO-28 packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
VND920P-E List of tables
Doc ID 10898 Rev 5 3/26
List of tables
Table 1. Device summary . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Table 2. Suggested connections for unused and not connected pins . . . . . . . . . . . . . . . . . . . . . . . . 6
Table 3. Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Table 4. Thermal data (per island) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Table 5. Power . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Table 6. Switching (VCC=13 V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Table 7. VCC output diode. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Table 8. Logic inputs. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Table 9. Current sense (9 V <= VCC <=16 V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Table 10. Protections . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Table 11. Truth table. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Table 12. Electrical transient requirements . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Table 13. Thermal calculation according to the PCB heatsink area . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Table 14. Thermal parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
Table 15. SO-28 mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
Table 16. Document revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
List of figures VND920P-E
4/26 Doc ID 10898 Rev 5
List of figures
Figure 1. Block diagram. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Figure 2. Configuration diagram (top view) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Figure 3. Current and voltage conventions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Figure 4. Switching characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Figure 5. IOUT/ISENSE versus IOUT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Figure 6. Waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Figure 7. Off-state output current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Figure 8. High level input current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Figure 9. Input clamp voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Figure 10. Turn-on voltage slope . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Figure 11. Overvoltage shutdown . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Figure 12. Turn-off voltage slope . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Figure 13. ILIM vs Tcase . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Figure 14. On-state resistance vs VCC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Figure 15. Input high level . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Figure 16. Input hysteresis voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Figure 17. On-state resistance vs Tcase. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Figure 18. Input low level . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Figure 19. Application schematic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Figure 20. Maximum turn-off current versus inductance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Figure 21. SO-28 PC board . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Figure 22. Rthj-amb vs PCB copper area in open box free air condition . . . . . . . . . . . . . . . . . . . . . . . 21
Figure 23. SO-28 thermal impedance junction ambient single pulse . . . . . . . . . . . . . . . . . . . . . . . . . 21
Figure 24. Thermal fitting model of a double channel HSD in SO-28 . . . . . . . . . . . . . . . . . . . . . . . . . 22
Figure 25. SO-28 package dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
Figure 26. SO-28 tube shipment (no suffix) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
Figure 27. SO-28 tape and reel shipment (suffix “TR”) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
VND920P-E Block diagram and pin description
Doc ID 10898 Rev 5 5/26
1 Block diagram and pin description
Figure 1. Block diagram
UNDERVOLTAGE
OVERTEMPERATURE
VCC 1
GND 1
INPUT 1
OUTPUT 1
OVERVOLTAGE
CURRENT LIMITER
LOGIC
DRIVER
Power CLAMP
VCC
CLAMP
VDS LIMITER
DETECTION
DETECTION
DETECTION
K
IOUT CURRENT
SENSE 1
UNDERVOLTAGE
OVERTEMPERATURE
VCC 2
GND 2
INPUT 2
OUTPUT 2
OVERVOLTAGE
CURRENT LIMITER
LOGIC
DRIVER
Power CLAMP
VCC
CLAMP
VDS LIMITER
DETECTION
DETECTION
DETECTION
K
IOUT CURRENT
SENSE 2
Block diagram and pin description VND920P-E
6/26 Doc ID 10898 Rev 5
Figure 2. Configuration diagram (top view)
Table 2. Suggested connections for unused and not connected pins
Connection / pin Current Sense N.C. Output Input
Floating X X X
To ground
Through 1KΩ
resistor
X
Through 10 KΩ
resistor
VCC 1
GND 1
INPUT 1
CURRENT SENSE 1
NC
VCC 1
VCC 2
GND 2
INPUT 2
CURRENT SENSE 2
VCC 2 VCC 2
OUTPUT 2
OUTPUT 2
OUTPUT 2
OUTPUT 2
OUTPUT 1
OUTPUT 1
OUTPUT 1
OUTPUT 1
VCC1
OUTPUT 2
OUTPUT 2
OUTPUT 1
OUTPUT 1
NC
NC
NC
1
14 15
28
VND920P-E Electrical specifications
Doc ID 10898 Rev 5 7/26
2 Electrical specifications
Figure 3. Current and voltage conventions
Note: VFn = VCCn - VOUTn during reverse battery condition.
2.1 Absolute maximum ratings
Stressing the device above the rating listed in Table 3 may cause permanent damage to the
device. These are stress ratings only and operation of the device at these or any other
conditions above those indicated in the operating sections of this specification is not implied.
Exposure to Absolute maximum rating conditions for extended periods may affect device
reliability. Refer also to the STMicroelectronics sure program and other relevant quality
document.
IS2
IGND2
OUTPUT2
VCC2
IOUT2
VCC2
VSENSE2
CURRENT SENSE 1
ISENSE1
VOUT2
OUTPUT1
IOUT1
CURRENT SENSE 2
ISENSE2
VSENSE1
VOUT1
INPUT2
IIN2
INPUT1
IIN1
VIN2
VIN1
GROUND2
IS1
VCC1
VCC1
IGND1
GROUND1
VF1 (*)
Table 3. Absolute maximum ratings
Symbol Parameter Value Unit
VCC DC supply voltage 41 V
- VCC Reverse DC supply voltage - 0.3 V
- Ignd DC reverse ground pin current - 200 mA
IOUT DC output current Internally limited A
- IOUT Reverse DC output current - 21 A
IIN DC input current +/- 10 mA
VCSENSE Current Sense maximum voltage
- 3
+ 15
V
V
VESD
Electrostatic discharge
(human body model: R = 1.5 KΩ; C = 100pF)
INPUT
CURRENT SENSE
OUTPUT
VCC
4000
2000
5000
5000
V
V
V
V
Electrical specifications VND920P-E
8/26 Doc ID 10898 Rev 5
2.2 Thermal data
Symbol Parameter Value Unit
EMAX
Maximum switching energy
(L = 0.25 mH; RL= 0 Ω; Vbat = 13.5 V;
Tjstart = 150 °C; IL = 45 A)
355 mJ
Ptot Power dissipation TC ≤ 25°C 6.25 W
Tj Junction operating temperature Internally limited °C
Tc Case operating temperature - 40 to 150 °C
Tstg Storage temperature - 55 to 150 °C
Table 3. Absolute maximum ratings (continued)
Table 4. Thermal data (per island)
Symbol Parameter Value Unit
Rthj-lead Thermal resistance junction-lead 15 °C/W
Rthj-amb
Thermal resistance junction-ambient
(one chip ON)
55(1)
1. When mounted on a standard single-sided FR-4 board with 1cm2 of Cu (at least 35 μm thick) connected to
all VCC pins. Horizontal mounting and no artificial air flow.
45(2)
2. When mounted on a standard single-sided FR-4 board with 6cm2 of Cu (at least 35 μm thick) connected to
all VCC pins. Horizontal mounting and no artificial air flow.
°C/W
Rthj-amb
Thermal resistance junction-ambient
(two chips ON)
46(1) 32(2) °C/W
VND920P-E Electrical specifications
Doc ID 10898 Rev 5 9/26
2.3 Electrical characteristics
Values specified in this section are for 8 V < VCC < 36 V; -40 °C < Tj < 150 °C, unless
otherwise stated.
Note: VCLAMP and VOV are correlated. Typical difference is 5 V.
Table 5. Power
Symbol Parameter Test conditions Min. Typ. Max. Unit
VCC Operating supply voltage 5.5 13 36 V
VUSD Undervoltage shutdown 3 4 5.5 V
VOV Overvoltage shutdown 36 V
RON On-state resistance
IOUT = 10 A; Tj = 25 °C;
IOUT = 10 A;
IOUT = 3 A; VCC = 6 V
16
32
55
mΩ
mΩ
mΩ
VCLAMP Clamp voltage ICC = 20 mA 41 48 55 V
IS Supply current
Off-state; VCC = 13 V;
VIN = VOUT = 0V
Off-state; VCC = 13 V;
VIN = VOUT = 0 V; Tj = 25 °C
On-state; VCC = 13 V; VIN = 5 V;
IOUT = 0 A; RSENSE = 3.9 kΩ
10
10
25
20
5
μA
μA
mA
IL(off1) Off-state output current VIN = VOUT = 0 V 0 50 μA
IL(off2) Off-state output current VIN = 0 V; VOUT = 3.5 V -75 0 μA
IL(off3) Off-state output current
VIN = VOUT = 0 V; VCC = 13 V;
Tj = 125 °C
5 μA
IL(off4) Off-state output current
VIN = VOUT = 0 V; VCC = 13 V;
Tj = 25 °C
3 μA
Table 6. Switching (VCC=13 V)
Symbol Parameter Test conditions Min. Typ. Max. Unit
td(on) Turn-on delay time RL = 1.3 Ω (see Figure 4.) 50 μs
td(off) Turn-off delay time RL = 1.3 Ω (see Figure 4.) 50 μs
dVOUT/dt(on) Turn-on voltage slope RL = 1.3 Ω (see Figure 4.) See Figure 10. V/μs
dVOUT/dt(off) Turn-off voltage slope RL = 1.3 Ω (see Figure 4.) See Figure 12. V/μs
Table 7. VCC output diode
Symbol Parameter Test conditions Min. Typ. Max. Unit
VF Forward on voltage - IOUT = 5 A; Tj = 150 °C - - 0.6 V
Electrical specifications VND920P-E
10/26 Doc ID 10898 Rev 5
Table 8. Logic inputs
Symbol Parameter Test conditions Min. Typ. Max. Unit
VIL Input low level voltage 1.25 V
IIL Low level input current VIN = 1.25 V 1 μA
VIH Input high level voltage 3.25 V
IIH High level input current VIN = 3.25 V 10 μA
VI(hyst) Input hysteresis voltage 0.5 V
VICL Input clamp voltage
IIN = 1 mA
IIN = - 1 mA
6 6.8
- 0.7
8 V
V
Table 9. Current sense (9 V <= VCC <=16 V)
Symbol Parameter Test conditions Min. Typ. Max. Unit
K1 IOUT/ISENSE
IOUT = 1 A; VSENSE = 0.5 V;
Tj = -40 °C...150 °C
3300 4400 6000
dK1/K1 Current sense ratio drift
IOUT = 1 A; VSENSE = 0.5 V;
Tj= - 40 °C...150 °C
-10 +10 %
K2 IOUT/ISENSE
IOUT = 10 A; VSENSE = 4 V;
Tj = - 40 °C
Tj= 25 °C...150 °C
4200
4400
4900
4900
6000
5750
dK2/K2 Current sense ratio drift
IOUT = 10 A; VSENSE = 4 V;
Tj = -40 °C...150 °C
-8 +8 %
K3 IOUT/ISENSE
IOUT = 30 A; VSENSE = 4 V;
Tj = -40 °C
Tj = 25 °C...150 °C
4200
4400
4900
4900
5500
5250
dK3/K3 Current sense ratio drift
IOUT = 30 A; VSENSE = 4 V;
Tj = -40 °C...150 °C
-6 +6 %
ISENSE0 Analog sense current
VCC = 6...16V; IOUT = 0A;
VSENSE = 0V;
Tj = -40°C...150°C 0 10 μA
VSENSE
Max analog sense output
voltage
VCC = 5.5 V; IOUT = 5 A;
RSENSE = 10 kΩ
VCC > 8 V, IOUT = 10 A;
RSENSE = 10 kΩ
2
4
V
V
VSENSEH
Sense voltage in
overtemperature condition
VCC = 13 V; RSENSE = 3.9 kΩ 5.5 V
RVSENSEH
Analog sense output
impedance in
overtemperature condition
VCC = 13 V; Tj > TTSD;
output open
400 Ω
tDSENSE
Current sense delay
response
To 90 % ISENSE
(1)
1. Current sense signal delay after positive input slope.
500 μs
VND920P-E Electrical specifications
Doc ID 10898 Rev 5 11/26
Table 10. Protections(1)
1. To ensure long term reliability under heavy overload or short circuit conditions, protection and related
diagnostic signals must be used together with a proper software strategy. If the device operates under
abnormal conditions this software must limit the duration and number of activation cycles.
Symbol Parameter Test conditions Min. Typ. Max. Unit
TTSD Shutdown temperature 150 175 200 °C
TR Reset temperature 135 °C
Thyst Thermal hysteresis 7 15 °C
Ilim Current limitation
VCC = 13 V
5 V < VCC < 36 V
30 45 75
75
A
A
Vdemag
Turn-off output clamp
voltage
IOUT = 2 A; VIN = 0 V;
L = 6 mH
VCC - 41 VCC - 48 VCC - 55 V
VON
Output voltage drop
limitation
IOUT = 1 A;
Tj = -40 °C...150 °C
50 mV
Table 11. Truth table
Conditions Input Output Sense
Normal operation
L
H
L
H
0
Nominal
Overtemperature
L
H
L
L
0
VSENSEH
Undervoltage
L
H
L
L
0
0
Overvoltage
L
H
L
L
0
0
Short circuit to GND
L
H
H
L
L
L
0
(TjTTSD) VSENSEH
Short circuit to VCC
L
H
H
H
0
< Nominal
Negative output voltage clamp L L 0
Electrical specifications VND920P-E
12/26 Doc ID 10898 Rev 5
Figure 4. Switching characteristics
Table 12. Electrical transient requirements
ISO T/R
7637/1
Test pulse
Test level
I II III IV Delays and impedance
1 - 25 V(1)
1. All functions of the device are performed as designed after exposure to disturbance.
- 50 V(1) - 75 V(1) - 100 V(1) 2 ms, 10 Ω
2 + 25 V(1) + 50 V(1) + 75 V(1) + 100 V(1) 0.2 ms, 10 Ω
3a - 25 V(1) - 50 V(1) - 100 V(1) - 150 V(1) 0.1 μs, 50 Ω
3b + 25 V(1) + 50 V(1) + 75 V(1) + 100 V(1) 0.1 μs, 50 Ω
4 - 4 V(1) - 5 V(1) - 6 V(1) - 7 V(1) 100 ms, 0.01 Ω
5 + 26.5 V(1) + 46.5 V(2)
2. One or more functions of the device is not performed as designed after exposure and cannot be returned to
proper operation without replacing the device.
+ 66.5 V(2) + 86.5 V(2) 400 ms, 2 Ω
VOUT
dVOUT/dt(on)
tr
80%
10% tf
dVOUT/dt(off)
ISENSE
t
t
90%
td(off)
INPUT
t
90%
td(on)
tDSENSE
VND920P-E Electrical specifications
Doc ID 10898 Rev 5 13/26
Figure 5. IOUT/ISENSE versus IOUT
0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 32
3000
3500
4000
4500
5000
5500
6000
6500
min.Tj=-40°C
max.Tj=-40°C
min.Tj=25...150°C
max.Tj=25...150°C
typical value
IOUT (A)
IOUT/ISENSE
6500
6000
5500
5000
4500
4000
3500
3000
Electrical specifications VND920P-E
14/26 Doc ID 10898 Rev 5
Figure 6. Waveforms
SENSE
INPUT
NORMAL OPERATION
UNDERVOLTAGE
VCC
VUSD
VUSDhyst
INPUT
OVERVOLTAGE
VCC
SENSE
INPUT
SENSE
LOAD CURRENT
LOAD CURRENT
LOAD CURRENT
VOV
VCC > VUSD VOVhyst
SHORT TO GROUND
INPUT
LOAD CURRENT
SENSE
LOAD VOLTAGE
INPUT
LOAD VOLTAGE
SENSE
LOAD CURRENT
VI = 11.4 to 23 V test conditon value
Line regulation Table 6 on page 12.
10-May-2012 29
Added: order codes L7806ACV-DG, L7808ACV-DG, L7815ACV-DG,
L7824ABV-DG and L7824ACV-DG Table 26 on page 55.
19-Sep-2012 30 Modified load regulation units from V to mV in Table 3 to Table 9.
12-Mar-2013 31 Modified: VO output voltage at 25 °C min. value 14.4 V Table 16 on page 22.
04-Mar-2014 32
Part numbers L78xx, L78xxC, L78xxAB, L78xxAC changed to L78.
Removed TO-3 package.
Updated the description in cover page, Section 2: Pin configuration, Section 3:
Maximum ratings, Section 4: Test circuits, Section 5: Electrical characteristics,
Section 6: Application information, Section 8: Package mechanical data and
Table 26: Order codes.
Added Section 9: Packaging mechanical data.
Minor text changes.
Positive voltage regulator ICs
58/58 DocID2143 Rev 32
Please Read Carefully:
Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the
right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any
time, without notice.
All ST products are sold pursuant to ST’s terms and conditions of sale.
Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no
liability whatsoever relating to the choice, selection or use of the ST products and services described herein.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this
document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products
or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such
third party products or services or any intellectual property contained therein.
UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED
WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED
WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS
OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT.
ST PRODUCTS ARE NOT DESIGNED OR AUTHORIZED FOR USE IN: (A) SAFETY CRITICAL APPLICATIONS SUCH AS LIFE
SUPPORTING, ACTIVE IMPLANTED DEVICES OR SYSTEMS WITH PRODUCT FUNCTIONAL SAFETY REQUIREMENTS; (B)
AERONAUTIC APPLICATIONS; (C) AUTOMOTIVE APPLICATIONS OR ENVIRONMENTS, AND/OR (D) AEROSPACE APPLICATIONS
OR ENVIRONMENTS. WHERE ST PRODUCTS ARE NOT DESIGNED FOR SUCH USE, THE PURCHASER SHALL USE PRODUCTS AT
PURCHASER’S SOLE RISK, EVEN IF ST HAS BEEN INFORMED IN WRITING OF SUCH USAGE, UNLESS A PRODUCT IS
EXPRESSLY DESIGNATED BY ST AS BEING INTENDED FOR “AUTOMOTIVE, AUTOMOTIVE SAFETY OR MEDICAL” INDUSTRY
DOMAINS ACCORDING TO ST PRODUCT DESIGN SPECIFICATIONS. PRODUCTS FORMALLY ESCC, QML OR JAN QUALIFIED ARE
DEEMED SUITABLE FOR USE IN AEROSPACE BY THE CORRESPONDING GOVERNMENTAL AGENCY.
Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void
any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any
liability of ST.
ST and the ST logo are trademarks or registered trademarks of ST in various countries.
Information in this document supersedes and replaces all information previously supplied.
The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners.
© 2014 STMicroelectronics - All rights reserved
STMicroelectronics group of companies
Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan -
Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America
www.st.com
LM2904, LM2904A
Low-power dual operational amplifier
Datasheet - production data
Features
Internally frequency-compensated
Large DC voltage gain: 100 dB
Wide bandwidth (unity gain): 1.1 MHz
(temperature compensated)
Very low supply current/amplifier, essentially
independent of supply voltage
Low input bias current: 20 nA (temperature
compensated)
Low input offset current: 2 nA
Input common-mode voltage range includes
negative rail
Differential input voltage range equal to the
power supply voltage
Large output voltage swing 0 V to (VCC+ -1.5 V)
Related products:
See LM2904W for enhanced ESD
performances
Description
This circuit consists of two independent, high
gain, internally frequency-compensated
operational amplifiers designed specifically for
automotive and industrial control systems. It
operates from a single power supply over a wide
range of voltages. The low power supply drain is
independent of the magnitude of the power
supply voltage.
Application areas include transducer amplifiers,
DC gain blocks and all the conventional op-amp
circuits which can now be more easily
implemented in single power supply systems. For
example, these circuits can be directly supplied
from the standard +5 V which is used in logic
systems and easily provides the required
interface electronics without requiring any
additional power supply.
In the linear mode, the input common-mode
voltage range includes ground and the output
voltage can also swing to ground, even though
operated from a single power supply.
D
P
S
MiniSO-8
Q2
DFN8 2 x 2 mm
(Plastic micropackage)
SO-8
(Plastic micropackage)
TSSOP8
(Thin shrink small outline package)
www.st.com
Contents LM2904, LM2904A
2/24 DocID2471 Rev 15
Contents
1 Schematic diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Package pin connections . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
3 Absolute maximum ratings and operating conditions . . . . . . . . . . . . . 5
4 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
4.1 Typical single-supply applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
5 Macromodel . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
6 Package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
6.1 SO-8 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
6.2 DFN8 2 x 2 mm package mechanical data . . . . . . . . . . . . . . . . . . . . . . . 17
6.3 TSSOP8 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
6.4 MiniSO-8 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
7 Ordering information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
8 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
DocID2471 Rev 15 3/24
LM2904, LM2904A Schematic diagram
24
1 Schematic diagram
Figure 1. Schematic diagram (1/2 LM2904)
6 A 4 A 100A
Q2 Q3
Q1 Q4
Inverting
input
Non-inverting
input
Q8 Q9
Q10
Q11
Q12
50 mA
Q13
Output
Q7
Q6
Q5
RSC
VCC
CC
GND
Package pin connections LM2904, LM2904A
4/24 DocID2471 Rev 15
2 Package pin connections
Figure 2. DFN8 pin connections (top view)
1. The exposed pad of the DFN8 2x2 can be connected to VCC- or left floating.
Figure 3. MiniSO8, TSSOP8 and SO8 package pin connections (top view)
DocID2471 Rev 15 5/24
LM2904, LM2904A Absolute maximum ratings and operating conditions
24
3 Absolute maximum ratings and operating conditions
Table 1. Absolute maximum ratings
Symbol Parameter Value Unit
VCC Supply voltage (1)
1. All voltage values, except differential voltage are with respect to network ground terminal.
±16 or 32 V
Vid Differential input voltage(2)
2. Differential voltages are the non-inverting input terminal with respect to the inverting input terminal.
±32 V
Vin Input voltage -0.3 to 32 V
Output short-circuit duration (3)
3. Short-circuits from the output to VCC can cause excessive heating if Vcc+ > 15 V. The maximum output current is
approximately 40 mA, independent of the magnitude of VCC.
Destructive dissipation can result from simultaneous short-circuits on all amplifiers.
Infinite s
Iin
Input current (4): Vin driven negative
Input current (5): Vin driven positive above AMR value
4. This input current only exists when the voltage at any of the input leads is driven negative. It is due to the collector-base
junction of the input PNP transistor becoming forward-biased and thereby acting as input diode clamp. In addition to this
diode action, there is NPN parasitic action on the IC chip. This transistor action can cause the output voltages of the Opamps
to go to the VCC voltage level (or to ground for a large overdrive) for the time during which an input is driven negative.
This is not destructive and normal output is restored for input voltages above -0.3 V.
5. The junction base/substrate of the input PNP transistor polarized in reverse must be protected by a resistor in series with
the inputs to limit the input current to 400 μA max (R = (Vin-32 V)/400 μA).
5 mA in DC or 50 mA in AC
(duty cycle = 10%, T = 1s)
0.4
mA
Toper Operating free-air temperature range -40 to +125 °C
Tstg Storage temperature range -65 to +150 °C
Tj Maximum junction temperature 150 °C
Rthja
Thermal resistance junction to ambient(6)
SO-8
TSSOP8
MiniSO-8
DFN8 2x2
6. Short-circuits can cause excessive heating and destructive dissipation. Values are typical.
125
120
190
57
°C/W
Rthjc
Thermal resistance junction to case(6)
SO-8
TSSOP8
MiniSO-8
40
37
39
°C/W
ESD
HBM: human body model(7)
7. Human body model: a 100 pF capacitor is charged to the specified voltage, then discharged through a 1.5 kW resistor
between two pins of the device. This is done for all couples of connected pin combinations while the other pins are floating.
300 V
MM: machine model(8)
8. Machine model: a 200 pF capacitor is charged to the specified voltage, then discharged directly between two pins of the
device with no external series resistor (internal resistor < 5 W). This is done for all couples of connected pin combinations
while the other pins are floating.
200 V
CDM: charged device model(9)
9. Charged device model: all pins and the package are charged together to the specified voltage and then discharged directly
to the ground through only one pin. This is done for all pins.
1.5 kV
Absolute maximum ratings and operating conditions LM2904, LM2904A
6/24 DocID2471 Rev 15
Table 2. Operating conditions
Symbol Parameter Value Unit
VCC Supply voltage 3 to 30 V
Vicm Common mode input voltage range 0 to VCC+ - 1.5 V
Toper Operating free-air temperature range -40 to +125 °C
DocID2471 Rev 15 7/24
LM2904, LM2904A Electrical characteristics
24
4 Electrical characteristics
Table 3. VCC+ = 5 V, VCC- = ground, VO = 1.4 V, Tamb = 25° C
(unless otherwise specified)
Symbol Parameter Min. Typ. Max. Unit
Vio
Input offset voltage (1)
Tamb = 25° C LM2904
Tamb = 25° C LM2904A
Tmin Tamb Tmax LM2904
Tmin Tamb Tmax LM2904A
2
1
7
29
4
mV
Vio/T Input offset voltage drift 7 30 μV/°C
Iio
Input offset current
Tamb = 25° C
Tmin Tamb Tmax
2 30
40
nA
IioT Input offset current drift 10 300 pA/°C
Iib
Input bias current (2)
Tamb = 25° C
Tmin Tamb Tmax
20 150
200
nA
Avd
Large signal voltage gain
VCC+
= +15 V, RL = 2 k, Vo = 1.4 V to 11.4 V
Tamb = 25° C
Tmin Tamb Tmax
50
25
100
V/mV
SVR
Supply voltage rejection ratio (RS 10 k)
Tamb = 25° C
Tmin Tamb Tmax
65
65
100 dB
ICC
Supply current, all amp, no load
Tamb = 25°C, VCC+
= +5 V
Tmin Tamb Tmax, VCC+ = +30 V
0.7 1.2
2
mA
Vicm
Input common mode voltage range (VCC+= +30 V) (3)
Tamb = 25° C
Tmin Tamb Tmax
00
VCC+
-1.5
VCC+
-2
V
CMR
Common-mode rejection ratio (RS 10 k)
Tamb = 25° C
Tmin Tamb Tmax
70
60
85 dB
Isource
Output short-circuit current
VCC+ = +15 V, Vo = +2 V, Vid = +1 V
20 40 60 mA
Isink
Output sink current
VO = 2 V, VCC+
= +5 V
VO = +0.2 V, VCC+ = +15 V
10
12
20
50
mA
μA
VOH
High level output voltage (VCC+ = + 30 V)
Tamb = +25° C, RL 2 k
Tmin Tamb Tmax
Tamb = +25° C, RL 10 k
Tmin Tamb Tmax
26
26
27
27
27
28
V
Electrical characteristics LM2904, LM2904A
8/24 DocID2471 Rev 15
VOL
Low level output voltage (RL 10 k)
Tamb = +25° C
Tmin Tamb Tmax
5 20
20
SR
Slew rate
VCC+ = 15 V, Vin = 0.5 to 3 V, RL 2 k, CL =100 pF,
unity gain
Tmin Tamb Tmax
0.3
0.2
0.6
GBP
Gain bandwidth product f = 100 kHz
VCC+ = 30 V, Vin = 10 mV, RL 2 k, CL = 100 pF
0.7 1.1 MHz
THD
Total harmonic distortion
f = 1 kHz, AV = 20 dB, RL = 2 k, Vo = 2 Vpp,
CL = 100 pF, VCC+ = 30 V
0.02 %
en
Equivalent input noise voltage
f = 1 kHz, RS = 100 , VCC+ = 30 V
55 nV/Hz
VO1/VO2
Channel separation (4)
1 kHz f 20 kHz
120 dB
1. VO = 1.4 V, RS = 0 W, 5 V < VCC+ < 30 V, 0 V < Vic < VCC+ - 1.5 V.
2. The direction of the input current is out of the IC. This current is essentially constant, independent of the state of the output,
so there is no change in the loading charge on the input lines.
3. The input common-mode voltage of either input signal voltage should not be allowed to go negative by more than 0.3 V.
The upper end of the common-mode voltage range is VCC+ –1.5 V, but either or both inputs can go to +32 V without
damage.
4. Due to the proximity of external components, ensure that the stray capacitance does not cause coupling between these
external parts. This can typically be detected at higher frequencies because this type of capacitance increases.
Table 3. VCC+ = 5 V, VCC- = ground, VO = 1.4 V, Tamb = 25° C
(unless otherwise specified) (continued)
Symbol Parameter Min. Typ. Max. Unit
DocID2471 Rev 15 9/24
LM2904, LM2904A Electrical characteristics
24
Figure 4. Open-loop frequency response Figure 5. Large signal frequency response
VOLTAGE GAIN (dB)
1.0 10 100 1k 10k 100k 1M 10M
VCC = +10 to + 15V &
FREQUENCY (Hz)
10MΩ
VI
VCC/2
VCC = 30V &
0.1μF
VCC VO
-
+
-55°C Tamb +125°C
140
120
100
80
60
40
20
0
-55°C Tamb +125°C
FREQUENCY (Hz)
1k 10k 100k 1M
OUTPUT SWING (Vpp)
+7V 2kΩ
1kΩ
100kΩ
+15V
VO
-
+
VI
20
15
10
5
0
Figure 6. Voltage follower large signal response Figure 7. Current sinking output characteristics
INPUT
VOLTAGE (V)
OUTPUT
VOLTAGE (V)
VOLAGE FOLLOWER PULSE RESPONSE
0 10 20 30 40
TIME (μ s)
RL 2 kΩ
VCC = +15V
4
3
2
1
0
3
2
1
OUTPUT CHARACTERISTICS
OUTPUT SINK CURRENT (mA)
0,001 0,01 0,1 1 10 100
OUTPUT VOLTAGE(V)
VCC = +5V
VCC = +15V
VCC = +30V
-
IO
VO
Tamb = +25°C
vcc/2
vcc
+
10
1
0.1
0.01
Figure 8. Voltage follower small signal response Figure 9. Current sourcing output
characteristics
Electrical characteristics LM2904, LM2904A
10/24 DocID2471 Rev 15
Figure 10. Input current versus temperature Figure 11. Current limiting
Figure 12. Input voltage range Figure 13. Supply current
Figure 14. Voltage gain Figure 15. Input current versus supply voltage
0 10 20 30 40
POSITIVE SUPPLY VOLTAGE (V)
VOLTAGE GAIN (dB)
160
120
80
40
R L = 20kΩ
R L = 2kΩ
DocID2471 Rev 15 11/24
LM2904, LM2904A Electrical characteristics
24
Figure 16. Gain bandwidth product Figure 17. Power supply rejection ratio
Figure 18. Common-mode rejection ratio Figure 19. Phase margin vs capacitive load
Phase Margin at Vcc=15V and Vicm=7.5V
Vs. Iout and Capacitive load value
Electrical characteristics LM2904, LM2904A
12/24 DocID2471 Rev 15
4.1 Typical single-supply applications
Figure 20. AC coupled inverting amplifier Figure 21. AC coupled non-inverting amplifier
1/2
LM2904
~
0 2VPP
R
10 kΩ
L
Co
eo
R
6.2 kΩ
B
R
100 kΩ
f
R1
CI 10 kΩ
eI
VCC
R2
100 kΩ
C1
10 μF
R3
100 kΩ
A =-
R
V R1
f
(as shown AV = -10)
1/2
LM2904
~
0 2VPP
R
10 kΩ
L
Co
eo
R
6.2 kΩ
B
C1
0.1 μF
eI
VCC
(as shown AV = 11)
A =1+R2
V R1
R1
100 kΩ
R2
1 MΩ
CI
R3
1 MΩ
R4
100 kΩ
R5
100 kΩ
C2
10 μF
Figure 22. Non-inverting DC gain Figure 23. DC summing amplifier
R1
10 kΩ
R2
1 MΩ
1/2
LM2904
10 kΩ
eI
eO +5V
eO (V)
(mV)
0
AV= 1 + R2
R1
(As shown AV = 101)
1/2
LM2904
eO
e 4
e 3
e 2
e 1 100 kΩ
100 kΩ
100 kΩ
100 kΩ
100 kΩ
100 kΩ
eo = e1 + e2 - e3 - e4
where (e1 + e2) (e3 + e4)
to keep eo 0V
≥
≥
Figure 24. High input Z, DC differential amplifier Figure 25. Using symmetrical amplifiers to
reduce input current
+
1/2
LM2904
R1
100 kΩ
R2
100 kΩ
R4
100 kΩ
R3
100 kΩ
+V2
V1 Vo
1/2
LM2904
If R1 = R5 and R3 = R4 = R6 = R7
eo = [ 1 + ] (e2 - e1)
As shown eo = 101 (e2 - e1)
2R1
R2
IB
2N 929
0.001 μF
IB
3 MΩ
IB
I eo I
e I
IB
IB
Input current compensation
1.5 MΩ
1/2
LM2904
1/2
LM2904
DocID2471 Rev 15 13/24
LM2904, LM2904A Electrical characteristics
24
Table 4. Low drift peak detector Table 5. Active bandpass filter
1/2
LM2904
IB
2N 929 0.001 μF
IB
3R
3 MΩ
IB
Input current
compensation
eo
IB
e I
Zo
ZI
C
1 μF
2IB
R
1 MΩ
2IB
1/2
LM2904
1/2
LM2904
1/2
LM2904
R8
100 kΩ
C3
10 μF
R7
100 kΩ
R5
470 kΩ
C1
330 pF
Vo
VCC
R6
470 kΩ
C2
330 pF
R4
10 MΩ
R1
100 kΩ
R2
100 kΩ
+V1
R3
100 kΩ
1/2
LM2904
1/2
LM2904
Fo = 1 kHz
Q = 50
Av = 100 (40 dB)
Macromodel LM2904, LM2904A
14/24 DocID2471 Rev 15
5 Macromodel
An accurate macromodel of the LM2904 is available on STMicroelectronics’ web site at
www.st.com. This model is a trade-off between accuracy and complexity (that is, time
simulation) of the LM2904 operational amplifier. It emulates the nominal performances of a
typical device within the specified operating conditions mentioned in the datasheet. It also
helps to validate a design approach and to select the right operational amplifier, but it does
not replace on-board measurements.
DocID2471 Rev 15 15/24
LM2904, LM2904A Package information
24
6 Package information
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
Package information LM2904, LM2904A
16/24 DocID2471 Rev 15
6.1 SO-8 package information
Figure 26. SO-8 package mechanical drawing
Table 6. SO-8 package mechanical data
Ref.
Dimensions
Millimeters Inches
Min. Typ. Max. Min. Typ. Max.
A 1.75 0.069
A1 0.10 0.25 0.004 0.010
A2 1.25 0.049
b 0.28 0.48 0.011 0.019
c 0.17 0.23 0.007 0.010
D 4.80 4.90 5.00 0.189 0.193 0.197
E 5.80 6.00 6.20 0.228 0.236 0.244
E1 3.80 3.90 4.00 0.150 0.154 0.157
e 1.27 0.050
h 0.25 0.50 0.010 0.020
L 0.40 1.27 0.016 0.050
L1 1.04 0.040
k 1° 8° 1° 8°
ccc 0.10 0.004
DocID2471 Rev 15 17/24
LM2904, LM2904A Package information
24
6.2 DFN8 2 x 2 mm package mechanical data
Figure 27. DFN8 2 x 2 mm package mechanical drawing
Table 7. DFN8 2 x 2 mm package mechanical data (pitch 0.5 mm)
Ref.
Dimensions
Millimeters Inches
Min. Typ. Max. Min. Typ. Max.
A 0.51 0.55 0.60 0.020 0.022 0.024
A1 0.05 0.002
A3 0.15 0.006
b 0.18 0.25 0.30 0.007 0.010 0.012
D 1.85 2.00 2.15 0.073 0.079 0.085
D2 1.45 1.60 1.70 0.057 0.063 0.067
E 1.85 2.00 2.15 0.073 0.079 0.085
E2 0.75 0.90 1.00 0.030 0.035 0.039
e 0.50 0.020
L 0.50 0.020
ddd 0.08 0.003
Package information LM2904, LM2904A
18/24 DocID2471 Rev 15
Figure 28. DFN8 2 x 2 mm footprint recommendation
2.80 mm
0.30 mm
0.50 mm
0.45 mm
1.60 mm
0.75 mm
DocID2471 Rev 15 19/24
LM2904, LM2904A Package information
24
6.3 TSSOP8 package information
Figure 29. TSSOP8 package mechanical drawing
Figure 30. TSSOP8 package mechanical data
Ref.
Dimensions
Millimeters Inches
Min. Typ. Max. Min. Typ. Max.
A 1.20 0.047
A1 0.05 0.15 0.002 0.006
A2 0.80 1.00 1.05 0.031 0.039 0.041
b 0.19 0.30 0.007 0.012
c 0.09 0.20 0.004 0.008
D 2.90 3.00 3.10 0.114 0.118 0.122
E 6.20 6.40 6.60 0.244 0.252 0.260
E1 4.30 4.40 4.50 0.169 0.173 0.177
e 0.65 0.0256
k 0° 8° 0° 8°
L 0.45 0.60 0.75 0.018 0.024 0.030
L1 1 0.039
aaa 0.10 0.004
Package information LM2904, LM2904A
20/24 DocID2471 Rev 15
6.4 MiniSO-8 package information
Figure 31. MiniSO-8 package mechanical drawing
Table 8. MiniSO-8 package mechanical data
Ref.
Dimensions
Millimeters Inches
Min. Typ. Max. Min. Typ. Max.
A 1.1 0.043
A1 0 0.15 0 0.006
A2 0.75 0.85 0.95 0.030 0.033 0.037
b 0.22 0.40 0.009 0.016
c 0.08 0.23 0.003 0.009
D 2.80 3.00 3.20 0.11 0.118 0.126
E 4.65 4.90 5.15 0.183 0.193 0.203
E1 2.80 3.00 3.10 0.11 0.118 0.122
e 0.65 0.026
L 0.40 0.60 0.80 0.016 0.024 0.031
L1 0.95 0.037
L2 0.25 0.010
k 0° 8° 0° 8°
ccc 0.10 0.004
DocID2471 Rev 15 21/24
LM2904, LM2904A Ordering information
24
7 Ordering information
Table 9. Order codes
Order code Temperature range Package Packing Marking
LM2904D/DT
-40° C to +125° C
SO-8 Tube or
tape & reel
2904
LM2904PT TSSOP8
(thin shrink outline package) Tape & reel
LM2904ST MiniSO-8 Tape & reel K403
LM2904Q2T DFN8 2 x 2 Tape & reel K1Y
LM2904YDT(1) SO-8
(automotive grade level) Tape & reel
2904Y
LM2904AYDT(1) 2904AY
LM2904YPT(2) TSSOP8
(automotive grade level) Tape & reel
2904Y
LM2904AYPT(2) 904AY
LM2904YST(1) MiniSO-8
(automotive grade level) Tape & reel K409
1. Qualified and characterized according to AEC Q100 and Q003 or equivalent, advanced screening according to AEC Q001
& Q 002 or equivalent.
2. Qualification and characterization according to AEC Q100 and Q003 or equivalent, advanced screening according to AEC
Q001 & Q 002 or equivalent are on-going.
Revision history LM2904, LM2904A
22/24 DocID2471 Rev 15
8 Revision history
Table 10. Document revision history
Date Revision Changes
02-Jan-2002 1 Initial release.
20-Jun-2005 2
PPAP references inserted in the datasheet, see Table 9 on page 21.
ESD protection inserted in Table 1 on page 5.
10-Oct-2005 3 PPAP part numbers added in table Table 9 on page 21.
12-Dec-2005 4
Pin connections identification added on cover page figure.
Thermal resistance junction to case information added see Table 1 on
page 5.
01-Feb-2006 5 Maximum junction temperature parameter added in Table 1 on page 5.
02-May-2006 6 Minimum slew rate parameter in temperature Table 3 on page 7.
13-Jul-2006 7 Modified ESD values and added explanation on VCC, Vid in Table 1 on
page 5. Added macromodel information.
28-Feb-2007 8
Modified ESD/HBM values in Table 1 on page 5.
Updated MiniSO-8 package information.
Added note relative to automotive grade level part numbers in Table 9 on
page 21.
18-Jun-2007 9
Power dissipation value corrected in Table 1: Absolute maximum ratings.
Table 2: Operating conditions added.
Equivalent input noise voltage parameter added in Table 3.
Electrical characteristics curves updated. Figure 19: Phase margin vs
capacitive load added.
Section 6: Package information updated.
18-Dec-2007 10
Removed power dissipation parameter from Table 1: Absolute maximum
ratings.
Removed Vopp from electrical characteristics in Table 3.
Corrected MiniSO-8 package mechanical data in Section 6.4: MiniSO-8
package information.
08-Apr-2008 11
Added table of contents.
Corrected the scale of Figure 7 (mA not μA).
Corrected SO-8 package information.
02-Jun-2009 12
Added input current information in Table 1: Absolute maximum ratings.
Added L1 parameters in Table 6: SO-8 package mechanical data.
Added new order codes, LM2904AYD/DT, LM2904AYPT and LM2904AYST
in Table 9: Order codes.
13-Apr-2010 13
Added LM2904A on cover page.
Corrected footnote (5) in Table 1: Absolute maximum ratings.
Removed order code LM2904AYST from Table 9: Order codes.
DocID2471 Rev 15 23/24
LM2904, LM2904A Revision history
24
24-Jan-2012 14
Removed macromodel from Chapter 5 (now available on www.st.com).
Added DFN8 2 x 2 mm package information in Chapter 6 and related order
codes in Chapter 7.
Removed LM2904YD and LM2904AYD order codes from Table 9.
Changed note for LM2904YST order code in Table 9.
24-Jan-2014 15
Updated: marking info for LM2904AYPT, package silhouette drawings in the
cover page, Vio/T and IioT symbols in Table 3 on page 7
Added: ESD info in Features section and Section 2: Package pin
connections
Removed: LM2904N from Table 9: Order codes.
Table 10. Document revision history (continued)
Date Revision Changes
LM2904, LM2904A
24/24 DocID2471 Rev 15
Please Read Carefully:
Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the
right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any
time, without notice.
All ST products are sold pursuant to ST’s terms and conditions of sale.
Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no
liability whatsoever relating to the choice, selection or use of the ST products and services described herein.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this
document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products
or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such
third party products or services or any intellectual property contained therein.
UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED
WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED
WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS
OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT.
ST PRODUCTS ARE NOT DESIGNED OR AUTHORIZED FOR USE IN: (A) SAFETY CRITICAL APPLICATIONS SUCH AS LIFE
SUPPORTING, ACTIVE IMPLANTED DEVICES OR SYSTEMS WITH PRODUCT FUNCTIONAL SAFETY REQUIREMENTS; (B)
AERONAUTIC APPLICATIONS; (C) AUTOMOTIVE APPLICATIONS OR ENVIRONMENTS, AND/OR (D) AEROSPACE APPLICATIONS
OR ENVIRONMENTS. WHERE ST PRODUCTS ARE NOT DESIGNED FOR SUCH USE, THE PURCHASER SHALL USE PRODUCTS AT
PURCHASER’S SOLE RISK, EVEN IF ST HAS BEEN INFORMED IN WRITING OF SUCH USAGE, UNLESS A PRODUCT IS
EXPRESSLY DESIGNATED BY ST AS BEING INTENDED FOR “AUTOMOTIVE, AUTOMOTIVE SAFETY OR MEDICAL” INDUSTRY
DOMAINS ACCORDING TO ST PRODUCT DESIGN SPECIFICATIONS. PRODUCTS FORMALLY ESCC, QML OR JAN QUALIFIED ARE
DEEMED SUITABLE FOR USE IN AEROSPACE BY THE CORRESPONDING GOVERNMENTAL AGENCY.
Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void
any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any
liability of ST.
ST and the ST logo are trademarks or registered trademarks of ST in various countries.
Information in this document supersedes and replaces all information previously supplied.
The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners.
© 2014 STMicroelectronics - All rights reserved
STMicroelectronics group of companies
Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan -
Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America
www.st.com
LM217, LM317
1.2 V to 37 V adjustable voltage regulators
Datasheet - production data
Features
• Output voltage range: 1.2 to 37 V
• Output current in excess of 1.5 A
• 0.1 % line and load regulation
• Floating operation for high voltages
• Complete series of protections: current limiting,
thermal shutdown and SOA control
Description
The LM217, LM317 are monolithic integrated
circuits in TO-220, TO-220FP and D²PAK
packages intended for use as positive adjustable
voltage regulators. They are designed to supply
more than 1.5 A of load current with an output
voltage adjustable over a 1.2 to 37 V range. The
nominal output voltage is selected by means of a
resistive divider, making the device exceptionally
easy to use and eliminating the stocking of many
fixed regulators.
TO-220 TO-220FP
D²PAK
Table 1. Device summary
Order codes
TO-220 (single gauge) TO-220 (double gauge) D²PAK (tape and reel) TO-220FP
LM217T LM217T-DG LM217D2T-TR
LM317T LM317T-DG LM317D2T-TR LM317P
LM317BT
www.st.com
Contents LM217, LM317
2/25 DocID2154 Rev 19
Contents
1 Pin configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
3 Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
4 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
5 Typical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
6 Application information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
7 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
8 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
DocID2154 Rev 19 3/25
LM217, LM317 Pin configuration
25
1 Pin configuration
Figure 1. Pin connections (top view)
Maximum ratings LM217, LM317
4/25 DocID2154 Rev 19
2 Maximum ratings
Note: Absolute maximum ratings are those values beyond which damage to the device may occur.
Functional operation under these condition is not implied.
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
VI - VO Input-reference differential voltage 40 V
IO Output current Internally limited A
TOP Operating junction temperature for:
LM217 - 25 to 150
°C
LM317 0 to 125
LM317B -40 to 125
PD Power dissipation Internally limited
TSTG Storage temperature - 65 to 150 °C
Table 3. Thermal data
Symbol Parameter D²PAK TO-220 TO-220FP Unit
RthJC Thermal resistance junction-case 3 5 5 °C/W
RthJA Thermal resistance junction-ambient 62.5 50 60 °C/W
DocID2154 Rev 19 5/25
LM217, LM317 Diagram
25
3 Diagram
Figure 2. Schematic diagram
Electrical characteristics LM217, LM317
6/25 DocID2154 Rev 19
4 Electrical characteristics
VI - VO = 5 V, IO = 500 mA, IMAX = 1.5 A and PMAX = 20 W, TJ = - 55 to 150 °C, unless
otherwise specified.
Table 4. Electrical characteristics for LM217
Symbol Parameter Test conditions Min. Typ. Max. Unit
ΔVO Line regulation VI - VO = 3 to 40 V
TJ = 25°C 0.01 0.02
%/V
0.02 0.05
ΔVO Load regulation
VO ≤5 V
IO = 10 mA to IMAX
TJ = 25°C 5 15
mV
20 50
VO ≥5 V,
IO = 10 mA to IMAX
TJ = 25°C 0.1 0.3
%
0.3 1
IADJ Adjustment pin current 50 100 μA
ΔIADJ Adjustment pin current VI - VO = 2.5 to 40V IO = 10 mA to IMAX 0.2 5 μA
VREF Reference voltage
VI - VO = 2.5 to 40V IO= 10 mA to IMAX
PD ≤ PMAX
1.2 1.25 1.3 V
ΔVO/VO
Output voltage
temperature stability
1 %
IO(min) Minimum load current VI - VO = 40 V 3.5 5 mA
IO(max) Maximum load current
VI - VO ≤ 15 V, PD < PMAX 1.5 2.2
A
VI - VO = 40 V, PD < PMAX, TJ = 25°C 0.4
eN
Output noise voltage
(percentage of VO)
B = 10Hz to 100kHz, TJ = 25°C 0.003 %
SVR Supply voltage rejection (1) TJ = 25°C, f = 120Hz
CADJ=0 65
dB
CADJ=10μF 66 80
1. CADJ is connected between adjust pin and ground.
DocID2154 Rev 19 7/25
LM217, LM317 Electrical characteristics
25
VI - VO = 5 V, IO = 500 mA, IMAX = 1.5 A and PMAX = 20 W, TJ = 0 to 125 °C, unless
otherwise specified.
Table 5. Electrical characteristics for LM317
Symbol Parameter Test conditions Min. Typ. Max. Unit
ΔVO Line regulation VI - VO = 3 to 40 V
TJ = 25°C 0.01 0.04
%/V
0.02 0.07
ΔVO Load regulation
VO ≤ 5 V
IO = 10 mA to IMAX
TJ = 25°C 5 25
mV
20 70
VO ≥5 V,
IO = 10 mA to IMAX
TJ = 25°C 0.1 0.5
%
0.3 1.5
IADJ Adjustment pin current 50 100 μA
ΔIADJ Adjustment pin current
VI - VO = 2.5 to 40V,
IO = 10 mA to 500mA
0.2 5 μA
VREF
Reference voltage
(between pin 3 and pin 1)
VI - VO = 2.5 to 40V IO = 10 mA to 500mA
PD ≤ PMAX
1.2 1.25 1.3 V
ΔVO/VO
Output voltage
temperature stability
1 %
IO(min) Minimum load current VI - VO = 40 V 3.5 10 mA
IO(max) Maximum load current
VI - VO ≤ 15 V, PD < PMAX 1.5 2.2
A
VI - VO = 40 V, PD < PMAX, TJ = 25°C 0.4
eN
Output noise voltage
(percentage of VO)
B = 10Hz to 100kHz, TJ = 25°C 0.003 %
SVR Supply voltage rejection (1) TJ = 25°C, f = 120Hz
CADJ=0 65
dB
CADJ=10μF 66 80
1. CADJ is connected between adjust pin and ground.
Electrical characteristics LM217, LM317
8/25 DocID2154 Rev 19
VI - VO = 5 V, IO = 500 mA, IMAX = 1.5 A and PMAX = 20 W, TJ = - 40 to 125 °C, unless
otherwise specified.
Table 6. Electrical characteristics for LM317B
Symbol Parameter Test conditions Min. Typ. Max. Unit
ΔVO Line regulation VI - VO = 3 to 40 V
TJ = 25°C 0.01 0.04
%/V
0.02 0.07
ΔVO Load regulation
VO ≤ 5 V
IO = 10 mA to IMAX
TJ = 25°C 5 25
mV
20 70
VO ≥5 V,
IO = 10 mA to IMAX
TJ = 25°C 0.1 0.5
%
0.3 1.5
IADJ Adjustment pin current 50 100 μA
ΔIADJ Adjustment pin current
VI - VO = 2.5 to 40V,
IO = 10 mA to 500mA
0.2 5 μA
VREF
Reference voltage
(between pin 3 and pin 1)
VI - VO = 2.5 to 40V IO = 10 mA to 500mA
PD ≤ PMAX
1.2 1.25 1.3 V
ΔVO/VO
Output voltage
temperature stability
1 %
IO(min) Minimum load current VI - VO = 40 V 3.5 10 mA
IO(max) Maximum load current
VI - VO ≤ 15 V, PD < PMAX 1.5 2.2
A
VI - VO = 40 V, PD < PMAX, TJ = 25°C 0.4
eN
Output noise voltage
(percentage of VO)
B = 10Hz to 100kHz, TJ = 25°C 0.003 %
SVR Supply voltage rejection (1) TJ = 25°C, f = 120Hz
CADJ=0 65
dB
CADJ=10μF 66 80
1. CADJ is connected between adjust pin and ground.
DocID2154 Rev 19 9/25
LM217, LM317 Typical characteristics
25
5 Typical characteristics
Figure 3. Output current vs. input-output
differential voltage
Figure 4. Dropout voltage vs. junction
temperature
Figure 5. Reference voltage vs. junction
Figure 6. Basic adjustable regulator
Application information LM217, LM317
10/25 DocID2154 Rev 19
6 Application information
The LM217, LM317 provides an internal reference voltage of 1.25 V between the output and
adjustments terminals. This is used to set a constant current flow across an external resistor
divider (see Figure 6), giving an output voltage VO of:
VO = VREF (1 + R2/R1) + IADJ R2
The device was designed to minimize the term IADJ (100 μA max) and to maintain it very
constant with line and load changes. Usually, the error term IADJ × R2 can be neglected. To
obtain the previous requirement, all the regulator quiescent current is returned to the output
terminal, imposing a minimum load current condition. If the load is insufficient, the output
voltage will rise. Since the LM217, LM317 is a floating regulator and "sees" only the input-tooutput
differential voltage, supplies of very high voltage with respect to ground can be
regulated as long as the maximum input-to-output differential is not exceeded. Furthermore,
programmable regulators are easily obtainable and, by connecting a fixed resistor between
the adjustment and output, the device can be used as a precision current regulator. In order
to optimize the load regulation, the current set resistor R1 (see Figure 6) should be tied as
close as possible to the regulator, while the ground terminal of R2 should be near the ground
of the load to provide remote ground sensing. Performance may be improved with added
capacitance as follow:
• An input bypass capacitor of 0.1 μF
• An adjustment terminal to ground 10 μF capacitor to improve the ripple rejection of
about 15 dB (CADJ).
• An 1 μF tantalum (or 25 μF Aluminium electrolytic) capacitor on the output to improve
transient response. In addition to external capacitors, it is good practice to add
protection diodes, as shown in Figure 7 D1 protect the device against input short
circuit, while D2 protect against output short circuit for capacitance discharging.
Note: D1 protect the device against input short circuit, while D2 protects against output short
circuit for capacitors discharging.
Figure 7. Voltage regulator with protection diodes
DocID2154 Rev 19 11/25
LM217, LM317 Application information
25
IO = (VREF / R1) + IADJ = 1.25 V / R1
Figure 8. Slow turn-on 15 V regulator
Figure 9. Current regulator
Figure 10. 5 V electronic shut-down regulator
Application information LM217, LM317
12/25 DocID2154 Rev 19
(R2 sets maximum VO)
* RS sets output impedance of charger ZO = RS (1 + R2/R1). Use of RS allows low charging rates whit fully
charged battery.
Figure 11. Digitally selected outputs
Figure 12. Battery charger (12 V)
DocID2154 Rev 19 13/25
LM217, LM317 Application information
25
* R3 sets peak current (0.6 A for 1 0).
** C1 recommended to filter out input transients.
Figure 13. Current limited 6 V charger
Package mechanical data LM217, LM317
14/25 DocID2154 Rev 19
7 Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
Figure 14. TO-220 (single gauge) drawing
DocID2154 Rev 19 15/25
LM217, LM317 Package mechanical data
25
Table 7. TO-220 (single gauge) mechanical data
Dim.
mm
Min. Typ. Max.
A 4.40 4.60
b 0.61 0.88
b1 1.14 1.70
c 0.48 0.70
D 15.25 15.75
E 10 10.40
e 2.40 2.70
e1 4.95 5.15
F 0.51 0.60
H1 6.20 6.60
J1 2.40 2.72
L 13 14
L1 3.50 3.93
L20 16.40
L30 28.90
∅P 3.75 3.85
Q 2.65 2.95
Package mechanical data LM217, LM317
16/25 DocID2154 Rev 19
Figure 15. TO-220 (dual gauge) drawing
DocID2154 Rev 19 17/25
LM217, LM317 Package mechanical data
25
Table 8. TO-220 (dual gauge) mechanical data
Dim.
mm
Min. Typ. Max.
A 4.40 4.60
b 0.61 0.88
b1 1.14 1.70
c 0.48 0.70
D 15.25 15.75
D1 1.27
E 10 10.40
e 2.40 2.70
e1 4.95 5.15
F 1.23 1.32
H1 6.20 6.60
J1 2.40 2.72
L 13 14
L1 3.50 3.93
L20 16.40
L30 28.90
∅P 3.75 3.85
Q 2.65 2.95
Package mechanical data LM217, LM317
18/25 DocID2154 Rev 19
Figure 16. TO-220FP drawing
7012510_Rev_K
A
B
H
Dia
L7
D
E
L6
L5
L2
L3
L4
F1 F2
F
G
G1
DocID2154 Rev 19 19/25
LM217, LM317 Package mechanical data
25
Table 9. TO-220FP mechanical data
Dim.
mm
Min. Typ. Max.
A 4.4 4.6
B 2.5 2.7
D 2.5 2.75
E 0.45 0.7
F 0.75 1
F1 1.15 1.70
F2 1.15 1.70
G 4.95 5.2
G1 2.4 2.7
H 10 10.4
L2 16
L3 28.6 30.6
L4 9.8 10.6
L5 2.9 3.6
L6 15.9 16.4
L7 9 9.3
Dia 3 3.2
Package mechanical data LM217, LM317
20/25 DocID2154 Rev 19
Figure 17. D²PAK drawing
0079457_T
DocID2154 Rev 19 21/25
LM217, LM317 Package mechanical data
25
Table 10. D²PAK mechanical data
Dim.
mm
Min. Typ. Max.
A 4.40 4.60
A1 0.03 0.23
b 0.70 0.93
b2 1.14 1.70
c 0.45 0.60
c2 1.23 1.36
D 8.95 9.35
D1 7.50
E 10 10.40
E1 8.50
e 2.54
e1 4.88 5.28
H 15 15.85
J1 2.49 2.69
L 2.29 2.79
L1 1.27 1.40
L2 1.30 1.75
R 0.4
V2 0° 8°
Packaging mechanical data LM217, LM317
22/25 DocID2154 Rev 19
8 Packaging mechanical data
Figure 18. Tape for D²PAK
A0 P1 D1
P0
F
W
E
D
B0
K0
T
User direction of feed
P2
10 pitches cumulative
tolerance on tape +/- 0.2 mm
User direction of feed
R
Bending radius
B1
For machine ref. only
including draft and
radii concentric around B0
AM08852v1
Top cover
tape
DocID2154 Rev 19 23/25
LM217, LM317 Packaging mechanical data
25
Figure 19. Reel for D²PAK
Table 11. D²PAK tape and reel mechanical data
Tape Reel
Dim.
mm
Dim.
mm
Min. Max. Min. Max.
A0 10.5 10.7 A 330
B0 15.7 15.9 B 1.5
D 1.5 1.6 C 12.8 13.2
D1 1.59 1.61 D 20.2
E 1.65 1.85 G 24.4 26.4
F 11.4 11.6 N 100
K0 4.8 5.0 T 30.4
P0 3.9 4.1
P1 11.9 12.1 Base qty 1000
P2 1.9 2.1 Bulk qty 1000
R 50
T 0.25 0.35
W 23.7 24.3
A
D
B
Full radius G measured at hub
C
N
REEL DIMENSIONS
40mm min.
Access hole
At sl ot location
T
Tape slot
in core for
tape start 25 mm min.
width
AM08851v2
Revision history LM217, LM317
24/25 DocID2154 Rev 19
9 Revision history
Table 12. Document revision history
Date Revision Changes
01-Sep-2004 10 Mistake VREF ==> VO, tables 1, 4 and 5.
19-Jan-2007 11
D²PAK mechanical data has been updated, add footprint data and the
document has been reformatted.
13-Jun-2007 12
Change values ΔIADJ and VREF test condition of IO = 10 mA to IMAX ==>
IO = 10 mA to 500 mA on Table 5.
23-Nov-2007 13 Added Table 1.
06-Feb-2008 14
Added: TO-220 mechanical data Figure 14 on page 14 and Table 6 on
page 13.
02-Mar-2010 15
Added: notes Figure 14 on page 14, Figure 15 on page 15, Figure 16 and
Figure 17 on page 16.
17-Nov-2010 16 Modified: RthJC value for TO-220 Table 3 on page 4.
18-Nov-2011 17 Added: order code LM317T-DG Table 1 on page 1.
13-Feb-2012 18 Added: order code LM217T-DG Table 1 on page 1.
12-Mar-2014 19
The part number LM117 has been moved to a separate datasheet.
Removed TO-3 package.
Updated the description in cover page
Modified Table 1: Device summary, Table 3: Thermal data, Figure 1: Pin
connections (top view), Section 4: Electrical characteristics, Section 5: Typical
characteristics, Section 6: Application information, Section 7: Package
mechanical data.
Added Section 8: Packaging mechanical data.
Minor text changes.
DocID2154 Rev 19 25/25
LM217, LM317
25
Please Read Carefully:
Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the
right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any
time, without notice.
All ST products are sold pursuant to ST’s terms and conditions of sale.
Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no
liability whatsoever relating to the choice, selection or use of the ST products and services described herein.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this
document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products
or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such
third party products or services or any intellectual property contained therein.
UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED
WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED
WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS
OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT.
ST PRODUCTS ARE NOT DESIGNED OR AUTHORIZED FOR USE IN: (A) SAFETY CRITICAL APPLICATIONS SUCH AS LIFE
SUPPORTING, ACTIVE IMPLANTED DEVICES OR SYSTEMS WITH PRODUCT FUNCTIONAL SAFETY REQUIREMENTS; (B)
AERONAUTIC APPLICATIONS; (C) AUTOMOTIVE APPLICATIONS OR ENVIRONMENTS, AND/OR (D) AEROSPACE APPLICATIONS
OR ENVIRONMENTS. WHERE ST PRODUCTS ARE NOT DESIGNED FOR SUCH USE, THE PURCHASER SHALL USE PRODUCTS AT
PURCHASER’S SOLE RISK, EVEN IF ST HAS BEEN INFORMED IN WRITING OF SUCH USAGE, UNLESS A PRODUCT IS
EXPRESSLY DESIGNATED BY ST AS BEING INTENDED FOR “AUTOMOTIVE, AUTOMOTIVE SAFETY OR MEDICAL” INDUSTRY
DOMAINS ACCORDING TO ST PRODUCT DESIGN SPECIFICATIONS. PRODUCTS FORMALLY ESCC, QML OR JAN QUALIFIED ARE
DEEMED SUITABLE FOR USE IN AEROSPACE BY THE CORRESPONDING GOVERNMENTAL AGENCY.
Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void
any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any
liability of ST.
ST and the ST logo are trademarks or registered trademarks of ST in various countries.
Information in this document supersedes and replaces all information previously supplied.
The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners.
© 2014 STMicroelectronics - All rights reserved
STMicroelectronics group of companies
Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan -
Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America
www.st.com
STP80NF55L-08
STB80NF55L-08 - STB80NF55L-08-1
N-CHANNEL 55V - 0.0065Ω - 80A - TO-220/D2PAK/I2PAK
STripFET™ II POWER MOSFET
(1) Current Limited by Package
(2) ISD ≤ 80A, di/dt ≤ 500A/μs, VDD= 40V Tj ≤ TJMAX.
(3) Starting Tj= 25°C, ID= 40A, VDD= 40V
TYPICAL RDS(on) = 0.0065Ω
LOW THRESHOLD DRIVE
LOGIC LEVEL DEVICE
DESCRIPTION
This Power Mosfet is the latest development of
STMicroelectronics unique “Single Feature
Size™” strip-based process. The resulting transistor
shows extremely high packing density for
low on-resistance, rugged avalance characteristics
and less critical alignment steps therefore a remarkable
manufacturing reproducibility.
APPLICATIONS
HIGH CURRENT SWITCHING APPLICATION
ABSOLUTE MAXIMUM RATINGS
() Pulse width limited by safe operating area
TYPE VDSS RDS(on) ID
STP80NF55L-08
STB80NF55L-08
STB80NF55L-08-1
55 V
55 V
55 V
0.008Ω
0.008Ω
0.008Ω
80 A
80 A
80 A
Symbol Parameter Value Unit
VDS Drain-source Voltage (VGS = 0) 55 V
VDGR Drain-gate Voltage (RGS = 20 kΩ) 55 V
VGS Gate- source Voltage ± 16 V
ID (1) Drain Current (continuous) at TC = 25°C 80 A
ID (1) Drain Current (continuous) at TC = 100°C 80 A
IDM () Drain Current (pulsed) 320 A
PTOT Total Dissipation at TC = 25°C 300 W
Derating Factor 2 W/°C
dv/dt (2) Peak Diode Recovery voltage slope 15 V/ns
EAS(3) Single Pulse Avalanche Energy 870 mJ
Tstg Storage Temperature –55 to 175 °C
Tj Max. Operating Junction Temperature 175 °C
TO-220
1
2
3 1
3
D2PAK
1 2 3
I2PAK
INTERNAL SCHEMATIC DIAGRAM
STP80NF55L-08 - STB80NF55L-08 - STB80NF55L-08-1
2/9
THERMAL DATA
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
ON (1)
DYNAMIC
Rthj-case Thermal Resistance Junction-case Max 0.5 °C/W
Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W
Tl Maximum Lead Temperature For Soldering Purpose 300 °C
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V(BR)DSS Drain-source
Breakdown Voltage
ID = 250 μA, VGS = 0 55 V
IDSS Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating 1 μA
VDS = Max Rating, TC = 125 °C 10 μA
IGSS Gate-body Leakage
Current (VDS = 0)
VGS = ± 16V ±100 nA
Symbol Parameter Test Conditions Min. Typ. Max. Unit
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250μA 1 1.6 2.5 V
RDS(on) Static Drain-source On
Resistance
VGS = 10 V, ID = 40 A
VGS = 5 V, ID = 40 A
0.0065
0.008
0.008
0.01
ΩΩ
Symbol Parameter Test Conditions Min. Typ. Max. Unit
gfs Forward Transconductance VDS =15V , ID =40 A 150 S
Ciss Input Capacitance VDS = 25V, f = 1 MHz, VGS = 0 4350 pF
Coss Output Capacitance 800 pF
Crss Reverse Transfer
Capacitance
260 pF
3/9
STP80NF55L-08 - STB80NF55L-08 - STB80NF55L-08-1
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note: 1. Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Symbol Parameter Test Conditions Min. Typ. Max. Unit
td(on) Turn-on Delay Time VDD = 27V, ID = 40A
RG = 4.7Ω VGS = 4.5V
(see test circuit, Figure 3)
35 ns
tr Rise Time 145 ns
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD = 27.5 V, ID = 80A,
VGS = 4.5V
75
20
30
100 nC
nC
nC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
td(off)
tf
Turn-off-Delay Time
Fall Time
VDD = 27V, ID = 40A,
RG = 4.7Ω, VGS = 4.5V
(see test circuit, Figure 3)
85
65
ns
ns
Symbol Parameter Test Conditions Min. Typ. Max. Unit
ISD Source-drain Current 80 A
ISDM (2) Source-drain Current (pulsed) 320 A
VSD (2) Forward On Voltage ISD = 80A, VGS = 0 1.5 V
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 80A, di/dt = 100A/μs,
VDD = 20V, Tj = 150°C
(see test circuit, Figure 5)
85
280
6.5
ns
nC
A
STP80NF55L-08 - STB80NF55L-08 - STB80NF55L-08-1
4/9
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
Fig. 4: Gate Charge test Circuit
Fig. Fig. 1: Unclamped Inductive Load Test Circuit 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuit For
Resistive Load
5/9
STP80NF55L-08 - STB80NF55L-08 - STB80NF55L-08-1
DIM.
mm. inch
MIN. TYP MAX. MIN. TYP. MAX.
A 4.40 4.60 0.173 0.181
b 0.61 0.88 0.024 0.034
b1 1.15 1.70 0.045 0.066
c 0.49 0.70 0.019 0.027
D 15.25 15.75 0.60 0.620
E 10 10.40 0.393 0.409
e 2.40 2.70 0.094 0.106
e1 4.95 5.15 0.194 0.202
F 1.23 1.32 0.048 0.052
H1 6.20 6.60 0.244 0.256
J1 2.40 2.72 0.094 0.107
L 13 14 0.511 0.551
L1 3.50 3.93 0.137 0.154
L20 16.40 0.645
L30 28.90 1.137
øP 3.75 3.85 0.147 0.151
Q 2.65 2.95 0.104 0.116
TO-220 MECHANICAL DATA
STP80NF55L-08 - STB80NF55L-08 - STB80NF55L-08-1
6/9
1
DIM.
mm. inch
MIN. TYP MAX. MIN. TYP. MAX.
A 4.4 4.6 0.173 0.181
A1 2.49 2.69 0.098 0.106
A2 0.03 0.23 0.001 0.009
B 0.7 0.93 0.027 0.036
B2 1.14 1.7 0.044 0.067
C 0.45 0.6 0.017 0.023
C2 1.23 1.36 0.048 0.053
D 8.95 9.35 0.352 0.368
D1 8 0.315
E 10 10.4 0.393
E1 8.5 0.334
G 4.88 5.28 0.192 0.208
L 15 15.85 0.590 0.625
L2 1.27 1.4 0.050 0.055
L3 1.4 1.75 0.055 0.068
M 2.4 3.2 0.094 0.126
R 0.4 0.015
V2 0º 4º
D2PAK MECHANICAL DATA
3
7/9
STP80NF55L-08 - STB80NF55L-08 - STB80NF55L-08-1
DIM.
mm. inch
MIN. TYP MAX. MIN. TYP. MAX.
A 4.40 4.60 0.173 0.181
A1 2.40 2.72 0.094 0.107
b 0.61 0.88 0.024 0.034
b1 1.14 1.70 0.044 0.066
c 0.49 0.70 0.019 0.027
c2 1.23 1.32 0.048 0.052
D 8.95 9.35 0.352 0.368
e 2.40 2.70 0.094 0.106
e1 4.95 5.15 0.194 0.202
E 10 10.40 0.393 0.410
L 13 14 0.511 0.551
L1 3.50 3.93 0.137 0.154
L2 1.27 1.40 0.050 0.055
TO-262 (I2PAK) MECHANICAL DATA
STP80NF55L-08 - STB80NF55L-08 - STB80NF55L-08-1
8/9
TAPE AND REEL SHIPMENT (suffix ”T4”)*
D2PAK FOOTPRINT TUBE SHIPMENT (no suffix)*
* on sales type
DIM.
mm inch
MIN. MAX. MIN. MAX.
A 330 12.992
B 1.5 0.059
C 12.8 13.2 0.504 0.520
D 20.2 0795
G 24.4 26.4 0.960 1.039
N 100 3.937
T 30.4 1.197
BASE QTY BULK QTY
1000 1000
REEL MECHANICAL DATA
DIM.
mm inch
MIN. MAX. MIN. MAX.
A0 10.5 10.7 0.413 0.421
B0 15.7 15.9 0.618 0.626
D 1.5 1.6 0.059 0.063
D1 1.59 1.61 0.062 0.063
E 1.65 1.85 0.065 0.073
F 11.4 11.6 0.449 0.456
K0 4.8 5.0 0.189 0.197
P0 3.9 4.1 0.153 0.161
P1 11.9 12.1 0.468 0.476
P2 1.9 2.1 0.075 0.082
R 50 1.574
T 0.25 0.35 0.0098 0.0137
W 23.7 24.3 0.933 0.956
TAPE MECHANICAL DATA
9/9
STP80NF55L-08 - STB80NF55L-08 - STB80NF55L-08-1
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from
its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information
previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or
systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
All other names are the property of their respective owners
© 2004 STMicroelectronics - All Rights Reserved
STMicroelectronics GROUP OF COMPANIES
Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan -
Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland
STP16NF06L
STP16NF06LFP
N-CHANNEL 60V - 0.07 Ω - 16A TO-220/TO-220FP
STripFET™ II POWER MOSFET
■ TYPICAL RDS(on) = 0.07Ω
■ EXCEPTIONAL dv/dt CAPABILITY
■ LOW GATE CHARGE AT 100 oC
■ LOW THRESHOLD DRIVE
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size™" stripbased
process. The resulting transistor shows extremely
high packing density for low on-resistance, rugged
avalanche characteristics and less critical alignment
steps therefore a remarkable manufacturing
reproducibility.
APPLICATIONS
■ MOTOR CONTROL, AUDIO AMPLIFIERS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ SOLENOID AND RELAY DRIVERS
■ DC-DC & DC-AC CONVERTERS
■ AUTOMOTIVE ENVIRONMENT
TYPE VDSS RDS(on) ID
STP16NF06L
STP60NF06LFP
60 V
60 V
<0.09 Ω
<0.09 Ω
16 A
11 A
1
2
3
1
2
3
TO-220 TO-220FP
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
(•) Pulse width limited by safe operating area.
(*) Current Limited by package’s thermal resistance
(1) ISD ≤ 16A, di/dt ≤ 210A/μs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.
(2) Starting Tj = 25 oC, ID = 8A, VDD = 30V
Symbol Parameter Value Unit
STP16NF06L STP16NF06LFP
VDS Drain-source Voltage (VGS = 0) 60 V
VDGR Drain-gate Voltage (RGS = 20 kΩ) 60 V
VGS Gate- source Voltage ± 16 V
ID Drain Current (continuous) at TC = 25°C 16 11(*) A
ID Drain Current (continuous) at TC = 100°C 11 7.5(*) A
IDM(•) Drain Current (pulsed) 64 44(*) A
Ptot Total Dissipation at TC = 25°C 45 25 W
Derating Factor 0.3 0.17 W/°C
dv/dt (1) Peak Diode Recovery voltage slope 23 V/ns
EAS (2) Single Pulse Avalanche Energy 127 mJ
VISO Insulation Withstand Voltage (DC) -------- 2500 V
Tstg Storage Temperature
-55 to 175 °C
Tj Operating Junction Temperature
STP16NF06L/FP
2/9
THERMAL DATA
ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified)
OFF
ON (1)
DYNAMIC
TO-220 TO-220FP
Rthj-case Thermal Resistance Junction-case Max 3.33 6 °C/W
Rthj-amb
Tl
Thermal Resistance Junction-ambient
Maximum Lead Temperature For Soldering Purpose
Max 62.5
300
°C/W
°C
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V(BR)DSS Drain-source
Breakdown Voltage
ID = 250 μA, VGS = 0 60 V
IDSS Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
VDS = Max Rating TC = 125°C
1
10
μA
μA
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ± 16V ±100 nA
Symbol Parameter Test Conditions Min. Typ. Max. Unit
VGS(th) Gate Threshold Voltage VDS = VGS ID = 250 μA 1 2.5 V
RDS(on) Static Drain-source On
Resistance
VGS = 5 V ID = 8 A
VGS = 10 V ID = 8 A
0.08
0.07
0.10
0.09
ΩΩ
Symbol Parameter Test Conditions Min. Typ. Max. Unit
gfs (*) Forward Transconductance VDS > ID(on) x RDS(on)max,
ID = 8 A
17 S
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
VDS = 25V, f = 1 MHz, VGS = 0 345
72
29
pF
pF
pF
3/9
STP16NF06L/FP
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
(*)Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %.
(•)Pulse width limited by safe operating area.
Symbol Parameter Test Conditions Min. Typ. Max. Unit
td(on)
tr
Turn-on Delay Time
Rise Time
VDD = 30 V ID = 8 A
RG = 4.7 Ω VGS = 4.5 V
(Resistive Load, Figure 3)
10
37
ns
ns
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD = 48 V ID = 16 A VGS= 5V 7.3
2.1
3.1
10 nC
nC
nC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
td(off)
tf
Turn-off Delay Time
Fall Time
VDD = 30 V ID = 8 A
RG = 4.7Ω, VGS = 4.5 V
(Resistive Load, Figure 3)
20
12.5
ns
ns
Symbol Parameter Test Conditions Min. Typ. Max. Unit
ISD
ISDM (•)
Source-drain Current
Source-drain Current (pulsed)
16
64
AA
VSD (*) Forward On Voltage ISD = 16 A VGS = 0 1.3 V
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 16 A di/dt = 100A/μs
VDD = 16 V Tj = 150°C
(see test circuit, Figure 5)
50
67.5
2.7
ns
nC
A
ELECTRICAL CHARACTERISTICS (continued)
Safe Operating Area for TO-220 Safe Operating Area for TO-220FP
STP16NF06L/FP
4/9
Thermal Impedance Thermal Impedance for TO-220FP
Output Characteristics Transfer Characteristics
Transconductance Static Drain-source On Resistance
5/9
STP16NF06L/FP
Gate Charge vs Gate-source Voltage Capacitance Variations
Normalized Gate Threshold Voltage vs Temperature Normalized on Resistance vs Temperature
Source-drain Diode Forward Characteristics
STP16NF06L/FP
6/9
Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuits For Resistive
Load
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
7/9
STP16NF06L/FP
DIM.
mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107
D1 1.27 0.050
E 0.49 0.70 0.019 0.027
F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.067
F2 1.14 1.70 0.044 0.067
G 4.95 5.15 0.194 0.203
G1 2.4 2.7 0.094 0.106
H2 10.0 10.40 0.393 0.409
L2 16.4 0.645
L4 13.0 14.0 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.2 6.6 0.244 0.260
L9 3.5 3.93 0.137 0.154
DIA. 3.75 3.85 0.147 0.151
L6
A
C
D
E
D1
F
G
L7
L2
Dia.
F1
L5
L4
H2
L9
F2
G1
TO-220 MECHANICAL DATA
P011C
STP16NF06L/FP
8/9
DIM.
mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.4 4.6 0.173 0.181
B 2.5 2.7 0.098 0.106
D 2.5 2.75 0.098 0.108
E 0.45 0.7 0.017 0.027
F 0.75 1 0.030 0.039
F1 1.15 1.7 0.045 0.067
F2 1.15 1.7 0.045 0.067
G 4.95 5.2 0.195 0.204
G1 2.4 2.7 0.094 0.106
H 10 10.4 0.393 0.409
L2 16 0.630
L3 28.6 30.6 1.126 1.204
L4 9.8 10.6 0.385 0.417
L6 15.9 16.4 0.626 0.645
L7 9 9.3 0.354 0.366
Ø 3 3.2 0.118 0.126
L2
A
B
D
E
H
G
L6
¯
F
L3
G1
1 2 3
F2
F1
L7
L4
TO-220FP MECHANICAL DATA
9/9
STP16NF06L/FP
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is registered trademark of STMicroelectronics
All other names are the property of their respective owners.
© 2004 STMicroelectronics - All Rights Reserved
STMicroelectronics GROUP OF COMPANIES
Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan -
Malaysia - Malta - Morocco -Singapore - Spain - Sweden - Switzerland - United Kingdom - United States.
www.st.com
STM32F205xx
STM32F207xx
ARM-based 32-bit MCU, 150DMIPs, up to 1 MB Flash/128+4KB RAM, USB
OTG HS/FS, Ethernet, 17 TIMs, 3 ADCs, 15 comm. interfaces & camera
Datasheet - production data
Features
• Core: ARM 32-bit Cortex™-M3 CPU (120 MHz
max) with Adaptive real-time accelerator (ART
Accelerator™ allowing 0-wait state execution
performance from Flash memory, MPU,
150 DMIPS/1.25 DMIPS/MHz (Dhrystone 2.1)
• Memories
– Up to 1 Mbyte of Flash memory
– 512 bytes of OTP memory
– Up to 128 + 4 Kbytes of SRAM
– Flexible static memory controller that
supports Compact Flash, SRAM, PSRAM,
NOR and NAND memories
– LCD parallel interface, 8080/6800 modes
• Clock, reset and supply management
– From 1.8 to 3.6 V application supply+I/Os
– POR, PDR, PVD and BOR
– 4 to 26 MHz crystal oscillator
– Internal 16 MHz factory-trimmed RC
– 32 kHz oscillator for RTC with calibration
– Internal 32 kHz RC with calibration
• Low power
– Sleep, Stop and Standby modes
– VBAT supply for RTC, 20 × 32 bit backup
registers, and optional 4 KB backup SRAM
• 3 × 12-bit, 0.5 μs ADCs with up to 24 channels
and up to 6 MSPS in triple interleaved mode
• 2 × 12-bit D/A converters
• General-purpose DMA: 16-stream controller
with centralized FIFOs and burst support
• Up to 17 timers
– Up to twelve 16-bit and two 32-bit timers,
up to 120 MHz, each with up to 4
IC/OC/PWM or pulse counter and
quadrature (incremental) encoder input
• Debug mode: Serial wire debug (SWD), JTAG,
and Cortex-M3 Embedded Trace Macrocell™
• Up to 140 I/O ports with interrupt capability:
– Up to 136 fast I/Os up to 60 MHz
– Up to 138 5 V-tolerant I/Os
• Up to 15 communication interfaces
– Up to 3 × I2C interfaces (SMBus/PMBus)
– Up to 4 USARTs and 2 UARTs (7.5 Mbit/s,
ISO 7816 interface, LIN, IrDA, modem ctrl)
– Up to 3 SPIs (30 Mbit/s), 2 with muxed I2S
to achieve audio class accuracy via audio
PLL or external PLL
– 2 × CAN interfaces (2.0B Active)
– SDIO interface
• Advanced connectivity
– USB 2.0 full-speed device/host/OTG
controller with on-chip PHY
– USB 2.0 high-speed/full-speed
device/host/OTG controller with dedicated
DMA, on-chip full-speed PHY and ULPI
– 10/100 Ethernet MAC with dedicated DMA:
supports IEEE 1588v2 hardware, MII/RMII
• 8- to 14-bit parallel camera interface
(48 Mbyte/s max.)
–
• CRC calculation unit
• 96-bit unique ID
Table 1. Device summary
Reference Part number
STM32F205xx
STM32F205RB, STM32F205RC, STM32F205RE,
STM32F205RF, STM32F205RG, STM32F205VB,
STM32F205VC, STM32F205VE, STM32F205VF STM32F205VG,
STM32F205ZC, STM32F205ZE, STM32F205ZF, STM32F205ZG
STM32F207xx
STM32F207IC, STM32F207IE, STM32F207IF, STM32F207IG,
STM32F207ZC, STM32F207ZE, STM32F207ZF, STM32F207ZG,
STM32F207VC, STM32F207VE, STM32F207VF, STM32F207VG
LQFP64 (10 × 10 mm)
LQFP100 (14 × 14 mm)
LQFP144 (20 × 20 mm)
LQFP176 (24 × 24 mm)
UFBGA176
(10 × 10 mm)
WLCSP64+2
(0.400 mm pitch)
www.st.com
Contents STM32F20xxx
2/178 DocID15818 Rev 11
Contents
1 Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
2 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
2.1 Full compatibility throughout the family . . . . . . . . . . . . . . . . . . . . . . . . . . 15
3 Functional overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
3.1 ARM® Cortex™-M3 core with embedded Flash and SRAM . . . . . . . . . . 18
3.2 Adaptive real-time memory accelerator (ART Accelerator™) . . . . . . . . . 18
3.3 Memory protection unit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
3.4 Embedded Flash memory . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
3.5 CRC (cyclic redundancy check) calculation unit . . . . . . . . . . . . . . . . . . . 19
3.6 Embedded SRAM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
3.7 Multi-AHB bus matrix . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
3.8 DMA controller (DMA) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
3.9 Flexible static memory controller (FSMC) . . . . . . . . . . . . . . . . . . . . . . . . 21
3.10 Nested vectored interrupt controller (NVIC) . . . . . . . . . . . . . . . . . . . . . . . 21
3.11 External interrupt/event controller (EXTI) . . . . . . . . . . . . . . . . . . . . . . . . . 22
3.12 Clocks and startup . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
3.13 Boot modes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
3.14 Power supply schemes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
3.15 Power supply supervisor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
3.16 Voltage regulator . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
3.16.1 Regulator ON . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
3.16.2 Regulator OFF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
3.16.3 Regulator ON/OFF and internal reset ON/OFF availability . . . . . . . . . . 28
3.17 Real-time clock (RTC), backup SRAM and backup registers . . . . . . . . . . 28
3.18 Low-power modes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
3.19 VBAT operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
3.20 Timers and watchdogs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
3.20.1 Advanced-control timers (TIM1, TIM8) . . . . . . . . . . . . . . . . . . . . . . . . . 30
3.20.2 General-purpose timers (TIMx) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31
3.20.3 Basic timers TIM6 and TIM7 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31
DocID15818 Rev 11 3/178
STM32F20xxx Contents
5
3.20.4 Independent watchdog . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32
3.20.5 Window watchdog . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32
3.20.6 SysTick timer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32
3.21 Inter-integrated circuit interface (I²C) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32
3.22 Universal synchronous/asynchronous receiver transmitters
(UARTs/USARTs) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32
3.23 Serial peripheral interface (SPI) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33
3.24 Inter-integrated sound (I2S) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33
3.25 SDIO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33
3.26 Ethernet MAC interface with dedicated DMA and IEEE 1588 support . . . 34
3.27 Controller area network (CAN) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34
3.28 Universal serial bus on-the-go full-speed (OTG_FS) . . . . . . . . . . . . . . . . 35
3.29 Universal serial bus on-the-go high-speed (OTG_HS) . . . . . . . . . . . . . . . 35
3.30 Audio PLL (PLLI2S) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36
3.31 Digital camera interface (DCMI) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36
3.32 True random number generator (RNG) . . . . . . . . . . . . . . . . . . . . . . . . . . 36
3.33 GPIOs (general-purpose inputs/outputs) . . . . . . . . . . . . . . . . . . . . . . . . . 36
3.34 ADCs (analog-to-digital converters) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37
3.35 DAC (digital-to-analog converter) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37
3.36 Temperature sensor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37
3.37 Serial wire JTAG debug port (SWJ-DP) . . . . . . . . . . . . . . . . . . . . . . . . . . 38
3.38 Embedded Trace Macrocell™ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38
4 Pinouts and pin description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39
5 Memory mapping . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 64
6 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 66
6.1 Parameter conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 66
6.1.1 Minimum and maximum values . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 66
6.1.2 Typical values . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 66
6.1.3 Typical curves . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 66
6.1.4 Loading capacitor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 66
6.1.5 Pin input voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 66
6.1.6 Power supply scheme . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 67
Contents STM32F20xxx
4/178 DocID15818 Rev 11
6.1.7 Current consumption measurement . . . . . . . . . . . . . . . . . . . . . . . . . . . 68
6.2 Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 68
6.3 Operating conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 69
6.3.1 General operating conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 69
6.3.2 VCAP1/VCAP2 external capacitor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 72
6.3.3 Operating conditions at power-up / power-down (regulator ON) . . . . . . 73
6.3.4 Operating conditions at power-up / power-down (regulator OFF) . . . . . 73
6.3.5 Embedded reset and power control block characteristics . . . . . . . . . . . 74
6.3.6 Supply current characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75
6.3.7 Wakeup time from low-power mode . . . . . . . . . . . . . . . . . . . . . . . . . . . 86
6.3.8 External clock source characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . 87
6.3.9 Internal clock source characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . 90
6.3.10 PLL characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 92
6.3.11 PLL spread spectrum clock generation (SSCG) characteristics . . . . . . 95
6.3.12 Memory characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 96
6.3.13 EMC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 99
6.3.14 Absolute maximum ratings (electrical sensitivity) . . . . . . . . . . . . . . . . 100
6.3.15 I/O current injection characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . 101
6.3.16 I/O port characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 102
6.3.17 NRST pin characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 106
6.3.18 TIM timer characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 107
6.3.19 Communications interfaces . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 108
6.3.20 12-bit ADC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 121
6.3.21 DAC electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 126
6.3.22 Temperature sensor characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . 128
6.3.23 VBAT monitoring characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 128
6.3.24 Embedded reference voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 129
6.3.25 FSMC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 129
6.3.26 Camera interface (DCMI) timing specifications . . . . . . . . . . . . . . . . . . 148
6.3.27 SD/SDIO MMC card host interface (SDIO) characteristics . . . . . . . . . 148
6.3.28 RTC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 149
7 Package characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150
7.1 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150
7.2 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 163
8 Part numbering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 164
DocID15818 Rev 11 5/178
STM32F20xxx Contents
5
9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 165
List of tables STM32F20xxx
6/178 DocID15818 Rev 11
List of tables
Table 1. Device summary . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Table 2. STM32F205xx features and peripheral counts. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Table 3. STM32F207xx features and peripheral counts. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Table 4. Regulator ON/OFF and internal reset ON/OFF availability. . . . . . . . . . . . . . . . . . . . . . . . . 28
Table 5. Timer feature comparison. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
Table 6. USART feature comparison . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33
Table 7. Legend/abbreviations used in the pinout table . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 43
Table 8. STM32F20x pin and ball definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44
Table 9. FSMC pin definition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 56
Table 10. Alternate function mapping . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 58
Table 11. Voltage characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 68
Table 12. Current characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 69
Table 13. Thermal characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 69
Table 14. General operating conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 69
Table 15. Limitations depending on the operating power supply range . . . . . . . . . . . . . . . . . . . . . . . 71
Table 16. VCAP1/VCAP2 operating conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 72
Table 17. Operating conditions at power-up / power-down (regulator ON) . . . . . . . . . . . . . . . . . . . . 73
Table 18. Operating conditions at power-up / power-down (regulator OFF). . . . . . . . . . . . . . . . . . . . 73
Table 19. Embedded reset and power control block characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 74
Table 20. Typical and maximum current consumption in Run mode, code with data processing
running from Flash memory (ART accelerator enabled) or RAM . . . . . . . . . . . . . . . . . . . 76
Table 21. Typical and maximum current consumption in Run mode, code with data processing
running from Flash memory (ART accelerator disabled) . . . . . . . . . . . . . . . . . . . . . . . . . . 77
Table 22. Typical and maximum current consumption in Sleep mode . . . . . . . . . . . . . . . . . . . . . . . . 80
Table 23. Typical and maximum current consumptions in Stop mode . . . . . . . . . . . . . . . . . . . . . . . . 82
Table 24. Typical and maximum current consumptions in Standby mode . . . . . . . . . . . . . . . . . . . . . 83
Table 25. Typical and maximum current consumptions in VBAT mode. . . . . . . . . . . . . . . . . . . . . . . . 83
Table 26. Peripheral current consumption . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 84
Table 27. Low-power mode wakeup timings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 86
Table 28. High-speed external user clock characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 87
Table 29. Low-speed external user clock characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 87
Table 30. HSE 4-26 MHz oscillator characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 89
Table 31. LSE oscillator characteristics (fLSE = 32.768 kHz) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90
Table 32. HSI oscillator characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90
Table 33. LSI oscillator characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 91
Table 34. Main PLL characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 92
Table 35. PLLI2S (audio PLL) characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 93
Table 36. SSCG parameters constraint . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 95
Table 37. Flash memory characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 97
Table 38. Flash memory programming. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 97
Table 39. Flash memory programming with VPP . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 98
Table 40. Flash memory endurance and data retention . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 98
Table 41. EMS characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 99
Table 42. EMI characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100
Table 43. ESD absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 101
Table 44. Electrical sensitivities . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 101
Table 45. I/O current injection susceptibility . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 102
Table 46. I/O static characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 102
DocID15818 Rev 11 7/178
STM32F20xxx List of tables
7
Table 47. Output voltage characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 104
Table 48. I/O AC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 104
Table 49. NRST pin characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 106
Table 50. Characteristics of TIMx connected to the APB1 domain . . . . . . . . . . . . . . . . . . . . . . . . . 107
Table 51. Characteristics of TIMx connected to the APB2 domain . . . . . . . . . . . . . . . . . . . . . . . . . 108
Table 52. I2C characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 109
Table 53. SCL frequency (fPCLK1= 30 MHz.,VDD = 3.3 V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 110
Table 54. SPI characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 111
Table 55. I2S characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 114
Table 56. USB OTG FS startup time . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 116
Table 57. USB OTG FS DC electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 116
Table 58. USB OTG FS electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 117
Table 59. USB HS DC electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 117
Table 60. Clock timing parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 117
Table 61. ULPI timing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 118
Table 62. Ethernet DC electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 118
Table 63. Dynamics characteristics: Ethernet MAC signals for SMI. . . . . . . . . . . . . . . . . . . . . . . . . 119
Table 64. Dynamics characteristics: Ethernet MAC signals for RMII . . . . . . . . . . . . . . . . . . . . . . . . 119
Table 65. Dynamics characteristics: Ethernet MAC signals for MII . . . . . . . . . . . . . . . . . . . . . . . . . 120
Table 66. ADC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 121
Table 67. ADC accuracy . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 122
Table 68. DAC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 126
Table 69. TS characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 128
Table 70. VBAT monitoring characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 128
Table 71. Embedded internal reference voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 129
Table 72. Asynchronous non-multiplexed SRAM/PSRAM/NOR read timings . . . . . . . . . . . . . . . . . 130
Table 73. Asynchronous non-multiplexed SRAM/PSRAM/NOR write timings . . . . . . . . . . . . . . . . . 131
Table 74. Asynchronous multiplexed PSRAM/NOR read timings. . . . . . . . . . . . . . . . . . . . . . . . . . . 132
Table 75. Asynchronous multiplexed PSRAM/NOR write timings . . . . . . . . . . . . . . . . . . . . . . . . . . 134
Table 76. Synchronous multiplexed NOR/PSRAM read timings . . . . . . . . . . . . . . . . . . . . . . . . . . . 136
Table 77. Synchronous multiplexed PSRAM write timings. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 137
Table 78. Synchronous non-multiplexed NOR/PSRAM read timings . . . . . . . . . . . . . . . . . . . . . . . . 138
Table 79. Synchronous non-multiplexed PSRAM write timings . . . . . . . . . . . . . . . . . . . . . . . . . . . . 139
Table 80. Switching characteristics for PC Card/CF read and write cycles in
attribute/common space . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 144
Table 81. Switching characteristics for PC Card/CF read and write cycles in I/O space . . . . . . . . . 145
Table 82. Switching characteristics for NAND Flash read cycles . . . . . . . . . . . . . . . . . . . . . . . . . . . 147
Table 83. Switching characteristics for NAND Flash write cycles. . . . . . . . . . . . . . . . . . . . . . . . . . . 148
Table 84. DCMI characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 148
Table 85. SD / MMC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 149
Table 86. RTC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 149
Table 87. LQFP64 – 10 x 10 mm 64 pin low-profile quad flat package mechanical data . . . . . . . . . 151
Table 88. WLCSP64+2 - 0.400 mm pitch wafer level chip size package mechanical data . . . . . . . 153
Table 89. LQPF100 – 14 x 14 mm 100-pin low-profile quad flat package mechanical data. . . . . . . 155
Table 90. LQFP144 20 x 20 mm, 144-pin low-profile quad flat package mechanical data. . . . . . . . 157
Table 91. LQFP176 - Low profile quad flat package 24 × 24 × 1.4 mm
package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 159
Table 92. UFBGA176+25 - ultra thin fine pitch ball grid array 10 × 10 × 0.6 mm mechanical data . 162
Table 93. Package thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 163
Table 94. Ordering information scheme . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 164
Table 95. Document revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 165
List of figures STM32F20xxx
8/178 DocID15818 Rev 11
List of figures
Figure 1. Compatible board design between STM32F10xx and STM32F2xx
for LQFP64 package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Figure 2. Compatible board design between STM32F10xx and STM32F2xx
for LQFP100 package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Figure 3. Compatible board design between STM32F10xx and STM32F2xx
for LQFP144 package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Figure 4. STM32F20x block diagram. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Figure 5. Multi-AHB matrix. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Figure 6. Regulator OFF/internal reset ON . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
Figure 7. Regulator OFF/internal reset OFF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
Figure 8. Startup in regulator OFF: slow VDD slope
- power-down reset risen after VCAP_1/VCAP_2 stabilization . . . . . . . . . . . . . . . . . . . . . . . . 27
Figure 9. Startup in regulator OFF: fast VDD slope
- power-down reset risen before VCAP_1/VCAP_2 stabilization . . . . . . . . . . . . . . . . . . . . . . 27
Figure 10. STM32F20x LQFP64 pinout . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39
Figure 11. STM32F20x WLCSP64+2 ballout. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39
Figure 12. STM32F20x LQFP100 pinout . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40
Figure 13. STM32F20x LQFP144 pinout . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41
Figure 14. STM32F20x LQFP176 pinout . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42
Figure 15. STM32F20x UFBGA176 ballout . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 43
Figure 16. Memory map. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65
Figure 17. Pin loading conditions. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 66
Figure 18. Pin input voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 66
Figure 19. Power supply scheme . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 67
Figure 20. Current consumption measurement scheme . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 68
Figure 21. Number of wait states versus fCPU and VDD range. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 72
Figure 22. External capacitor CEXT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 72
Figure 23. Typical current consumption vs temperature, Run mode, code with data
processing running from RAM, and peripherals ON. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 78
Figure 24. Typical current consumption vs temperature, Run mode, code with data
processing running from RAM, and peripherals OFF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 78
Figure 25. Typical current consumption vs temperature, Run mode, code with data
processing running from Flash, ART accelerator OFF, peripherals ON. . . . . . . . . . . . . . . 79
Figure 26. Typical current consumption vs temperature, Run mode, code with data
processing running from Flash, ART accelerator OFF, peripherals OFF . . . . . . . . . . . . . . 79
Figure 27. Typical current consumption vs temperature in Sleep mode,
peripherals ON . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 81
Figure 28. Typical current consumption vs temperature in Sleep mode,
peripherals OFF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 81
Figure 29. Typical current consumption vs temperature in Stop mode . . . . . . . . . . . . . . . . . . . . . . . . 82
Figure 30. High-speed external clock source AC timing diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . 88
Figure 31. Low-speed external clock source AC timing diagram. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 88
Figure 32. Typical application with an 8 MHz crystal . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 89
Figure 33. Typical application with a 32.768 kHz crystal . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90
Figure 34. ACCHSI versus temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 91
Figure 35. ACCLSI versus temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 92
Figure 36. PLL output clock waveforms in center spread mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 96
Figure 37. PLL output clock waveforms in down spread mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 96
DocID15818 Rev 11 9/178
STM32F20xxx List of figures
9
Figure 38. I/O AC characteristics definition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 106
Figure 39. Recommended NRST pin protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 107
Figure 40. I2C bus AC waveforms and measurement circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 110
Figure 41. SPI timing diagram - slave mode and CPHA = 0 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 112
Figure 42. SPI timing diagram - slave mode and CPHA = 1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 112
Figure 43. SPI timing diagram - master mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 113
Figure 44. I2S slave timing diagram (Philips protocol)(1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 115
Figure 45. I2S master timing diagram (Philips protocol)(1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 115
Figure 46. USB OTG FS timings: definition of data signal rise and fall time . . . . . . . . . . . . . . . . . . . 117
Figure 47. ULPI timing diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 118
Figure 48. Ethernet SMI timing diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 119
Figure 49. Ethernet RMII timing diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 119
Figure 50. Ethernet MII timing diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120
Figure 51. ADC accuracy characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 123
Figure 52. Typical connection diagram using the ADC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 123
Figure 53. Power supply and reference decoupling (VREF+ not connected to VDDA). . . . . . . . . . . . . 125
Figure 54. Power supply and reference decoupling (VREF+ connected to VDDA). . . . . . . . . . . . . . . . 125
Figure 55. 12-bit buffered /non-buffered DAC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 128
Figure 56. Asynchronous non-multiplexed SRAM/PSRAM/NOR read waveforms . . . . . . . . . . . . . . 130
Figure 57. Asynchronous non-multiplexed SRAM/PSRAM/NOR write waveforms . . . . . . . . . . . . . . 131
Figure 58. Asynchronous multiplexed PSRAM/NOR read waveforms. . . . . . . . . . . . . . . . . . . . . . . . 132
Figure 59. Asynchronous multiplexed PSRAM/NOR write waveforms . . . . . . . . . . . . . . . . . . . . . . . 134
Figure 60. Synchronous multiplexed NOR/PSRAM read timings . . . . . . . . . . . . . . . . . . . . . . . . . . . 135
Figure 61. Synchronous multiplexed PSRAM write timings. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 137
Figure 62. Synchronous non-multiplexed NOR/PSRAM read timings . . . . . . . . . . . . . . . . . . . . . . . . 138
Figure 63. Synchronous non-multiplexed PSRAM write timings . . . . . . . . . . . . . . . . . . . . . . . . . . . . 139
Figure 64. PC Card/CompactFlash controller waveforms for common memory read access . . . . . . 141
Figure 65. PC Card/CompactFlash controller waveforms for common memory write access . . . . . . 141
Figure 66. PC Card/CompactFlash controller waveforms for attribute memory read
access. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 142
Figure 67. PC Card/CompactFlash controller waveforms for attribute memory write
access. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 143
Figure 68. PC Card/CompactFlash controller waveforms for I/O space read access . . . . . . . . . . . . 143
Figure 69. PC Card/CompactFlash controller waveforms for I/O space write access . . . . . . . . . . . . 144
Figure 70. NAND controller waveforms for read access . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 146
Figure 71. NAND controller waveforms for write access . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 146
Figure 72. NAND controller waveforms for common memory read access . . . . . . . . . . . . . . . . . . . . 147
Figure 73. NAND controller waveforms for common memory write access. . . . . . . . . . . . . . . . . . . . 147
Figure 74. SDIO high-speed mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 148
Figure 75. SD default mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 149
Figure 76. LQFP64 – 10 x 10 mm 64 pin low-profile quad flat package outline . . . . . . . . . . . . . . . . 151
Figure 77. Recommended footprint . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 152
Figure 78. WLCSP64+2 - 0.400 mm pitch wafer level chip size package outline . . . . . . . . . . . . . . . 153
Figure 79. LQFP100, 14 x 14 mm 100-pin low-profile quad flat package outline . . . . . . . . . . . . . . . 155
Figure 80. Recommended footprint . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 156
Figure 81. LQFP144, 20 x 20 mm, 144-pin low-profile quad
flat package outline . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 157
Figure 82. Recommended footprint . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 158
Figure 83. LQFP176 - Low profile quad flat package 24 × 24 × 1.4 mm, package outline . . . . . . . . 159
Figure 84. LQFP176 recommended footprint . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 161
Figure 85. UFBGA176+25 - ultra thin fine pitch ball grid array 10 × 10 × 0.6 mm,
package outline. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 162
Introduction STM32F20xxx
10/178 DocID15818 Rev 11
1 Introduction
This datasheet provides the description of the STM32F205xx and STM32F207xx lines of
microcontrollers. For more details on the whole STMicroelectronics STM32™ family, please
refer to Section 2.1: Full compatibility throughout the family.
The STM32F205xx and STM32F207xx datasheet should be read in conjunction with the
STM32F20x/STM32F21x reference manual. They will be referred to as STM32F20x devices
throughout the document.
For information on programming, erasing and protection of the internal Flash memory,
please refer to the STM32F20x/STM32F21x Flash programming manual (PM0059).
The reference and Flash programming manuals are both available from the
STMicroelectronics website www.st.com.
For information on the Cortex™-M3 core please refer to the Cortex™-M3 Technical
Reference Manual, available from the www.arm.com website at the following address:
http://infocenter.arm.com/help/index.jsp?topic=/com.arm.doc.ddi0337e/.
DocID15818 Rev 11 11/178
STM32F20xxx Description
177
2 Description
The STM32F20x family is based on the high-performance ARM® Cortex™-M3 32-bit RISC
core operating at a frequency of up to 120 MHz. The family incorporates high-speed
embedded memories (Flash memory up to 1 Mbyte, up to 128 Kbytes of system SRAM), up
to 4 Kbytes of backup SRAM, and an extensive range of enhanced I/Os and peripherals
connected to two APB buses, three AHB buses and a 32-bit multi-AHB bus matrix.
The devices also feature an adaptive real-time memory accelerator (ART Accelerator™)
which allows to achieve a performance equivalent to 0 wait state program execution from
Flash memory at a CPU frequency up to 120 MHz. This performance has been validated
using the CoreMark benchmark.
All devices offer three 12-bit ADCs, two DACs, a low-power RTC, twelve general-purpose
16-bit timers including two PWM timers for motor control, two general-purpose 32-bit timers.
a true number random generator (RNG). They also feature standard and advanced
communication interfaces. New advanced peripherals include an SDIO, an enhanced
flexible static memory control (FSMC) interface (for devices offered in packages of 100 pins
and more), and a camera interface for CMOS sensors. The devices also feature standard
peripherals.
• Up to three I2Cs
• Three SPIs, two I2Ss. To achieve audio class accuracy, the I2S peripherals can be
clocked via a dedicated internal audio PLL or via an external PLL to allow
synchronization.
• 4 USARTs and 2 UARTs
• A USB OTG high-speed with full-speed capability (with the ULPI)
• A second USB OTG (full-speed)
• Two CANs
• An SDIO interface
• Ethernet and camera interface available on STM32F207xx devices only.
Note: The STM32F205xx and STM32F207xx devices operate in the –40 to +105 °C temperature
range from a 1.8 V to 3.6 V power supply. On devices in WLCSP64+2 package, if IRROFF
is set to VDD, the supply voltage can drop to 1.7 V when the device operates in the 0 to
70 °C temperature range using an external power supply supervisor (see Section 3.16).
A comprehensive set of power-saving modes allow the design of low-power applications.
STM32F205xx and STM32F207xx devices are offered in various packages ranging from 64
pins to 176 pins. The set of included peripherals changes with the device chosen.These
features make the STM32F205xx and STM32F207xx microcontroller family suitable for a
wide range of applications:
• Motor drive and application control
• Medical equipment
• Industrial applications: PLC, inverters, circuit breakers
• Printers, and scanners
• Alarm systems, video intercom, and HVAC
• Home audio appliances
Figure 4 shows the general block diagram of the device family.
Description STM32F20xxx
12/178 DocID15818 Rev 11
Table 2. STM32F205xx features and peripheral counts
Peripherals STM32F205Rx STM32F205Vx STM32F205Zx
Flash memory in Kbytes 128 256 512 768 1024 128 256 512 768 1024 256 512 768 1024
SRAM in Kbytes
System
(SRAM1+SRAM2)
64
(48+16)
96
(80+16)
128
(112+16)
64
(48+16)
96
(80+16)
128
(112+16)
96
(80+16)
128
(112+16)
Backup 4 4 4
FSMC memory controller No Yes(1)
Ethernet No
Timers
General-purpose 10
Advanced-control 2
Basic 2
IWDG Yes
WWDG Yes
RTC Yes
Random number generator Yes
Comm.
interfaces
SPI/(I2S) 3 (2)(2)
I2C 3
USART
UART
42
USB OTG FS Yes
USB OTG HS Yes
CAN 2
Camera interface No
GPIOs 51 82 114
SDIO Yes
12-bit ADC
Number of channels
3
16 16 24
12-bit DAC
Number of channels
Yes
2
Maximum CPU frequency 120 MHz
Operating voltage 1.8 V to 3.6 V(3)
STM32F20xxx Description
DocID15818 Rev 11 13/178
Operating temperatures
Ambient temperatures: –40 to +85 °C /–40 to +105 °C
Junction temperature: –40 to + 125 °C
Package LQFP64
LQFP64
WLCSP64
+2
LQFP6
4
LQFP64
WLCSP6
4+2
LQFP100 LQFP144
1. For the LQFP100 package, only FSMC Bank1 or Bank2 are available. Bank1 can only support a multiplexed NOR/PSRAM memory using the NE1 Chip
Select. Bank2 can only support a 16- or 8-bit NAND Flash memory using the NCE2 Chip Select. The interrupt line cannot be used since Port G is not
available in this package.
2. The SPI2 and SPI3 interfaces give the flexibility to work in an exclusive way in either the SPI mode or the I2S audio mode.
3. On devices in WLCSP64+2 package, if IRROFF is set to VDD, the supply voltage can drop to 1.7 V when the device operates in the 0 to 70 °C temperature
range using an external power supply supervisor (see Section 3.16).
Table 2. STM32F205xx features and peripheral counts (continued)
Peripherals STM32F205Rx STM32F205Vx STM32F205Zx
Table 3. STM32F207xx features and peripheral counts
Peripherals STM32F207Vx STM32F207Zx STM32F207Ix
Flash memory in Kbytes 256 512 768 1024 256 512 768 1024 256 512 768 1024
SRAM in Kbytes
System
(SRAM1+SRAM2)
128
(112+16)
Backup 4
FSMC memory controller Yes(1)
Ethernet Yes
Timers
General-purpose 10
Advanced-control 2
Basic 2
IWDG Yes
WWDG Yes
RTC Yes
Random number generator Yes
Description STM32F20xxx
14/178 DocID15818 Rev 11
Comm. interfaces
SPI/(I2S) 3 (2)(2)
I2C 3
USART
UART
42
USB OTG FS Yes
USB OTG HS Yes
CAN 2
Camera interface Yes
GPIOs 82 114 140
SDIO Yes
12-bit ADC
Number of channels
3
16 24 24
12-bit DAC
Number of channels
Yes
2
Maximum CPU frequency 120 MHz
Operating voltage 1.8 V to 3.6 V(3)
Operating temperatures
Ambient temperatures: –40 to +85 °C/–40 to +105 °C
Junction temperature: –40 to + 125 °C
Package LQFP100 LQFP144 LQFP176/
UFBGA176
1. For the LQFP100 package, only FSMC Bank1 or Bank2 are available. Bank1 can only support a multiplexed NOR/PSRAM memory using the NE1 Chip Select. Bank2 can
only support a 16- or 8-bit NAND Flash memory using the NCE2 Chip Select. The interrupt line cannot be used since Port G is not available in this package.
2. The SPI2 and SPI3 interfaces give the flexibility to work in an exclusive way in either the SPI mode or the I2S audio mode.
3. On devices in WLCSP64+2 package, if IRROFF is set to VDD, the supply voltage can drop to 1.7 V when the device operates in the 0 to 70 °C temperature range using an
external power supply supervisor (see Section 3.16).
Table 3. STM32F207xx features and peripheral counts (continued)
Peripherals STM32F207Vx STM32F207Zx STM32F207Ix
DocID15818 Rev 11 15/178
STM32F20xxx Description
177
2.1 Full compatibility throughout the family
The STM32F205xx and STM32F207xx constitute the STM32F20x family whose members
are fully pin-to-pin, software and feature compatible, allowing the user to try different
memory densities and peripherals for a greater degree of freedom during the development
cycle.
The STM32F205xx and STM32F207xx devices maintain a close compatibility with the
whole STM32F10xxx family. All functional pins are pin-to-pin compatible. The
STM32F205xx and STM32F207xx, however, are not drop-in replacements for the
STM32F10xxx devices: the two families do not have the same power scheme, and so their
power pins are different. Nonetheless, transition from the STM32F10xxx to the STM32F20x
family remains simple as only a few pins are impacted.
Figure 3 and Figure 1 provide compatible board designs between the STM32F20x and the
STM32F10xxx family.
Figure 1. Compatible board design between STM32F10xx and STM32F2xx
for LQFP64 package
31
1 16
17
32
48 33
64
49 47
VSS
VSS
VSS
VSS
0 resistor or soldering bridge
present for the STM32F10xx
configuration, not present in the
STM32F2xx configuration
ai15962b
Description STM32F20xxx
16/178 DocID15818 Rev 11
Figure 2. Compatible board design between STM32F10xx and STM32F2xx
for LQFP100 package
Figure 3. Compatible board design between STM32F10xx and STM32F2xx
for LQFP144 package
1. RFU = reserved for future use.
ai15961c
20
49
1 25
26
50
75 51
100
76 73
19
VSS
VSS
VDD
VSS
VSS
VSS
0 Ω resistor or soldering bridge
present for the STM32F10xx
configuration, not present in the
99 (RFU) STM32F2xx configuration
VDD VSS
VSS for STM32F10xx
VDD for STM32F2xx
Two 0 Ω resistors connected to:
- VSS for the STM32F10xx
- VDD, VSS, or NC for the STM32F2xx
ai15960c
31
71
1 36
37
72
108 73
144
109
VSS
0 Ω resistor or soldering bridge
present for the STM32F10xx
configuration, not present in the
STM32F2xx configuration
106
VSS
30
Two 0 Ω resistors connected to:
VDD VSS
VSS
VSS
143 (RFU)
VDD VSS
- VSS for the STM32F10xx
- VDD, VSS, or NC for the STM32F2xx
DocID15818 Rev 11 17/178
STM32F20xxx Description
177
Figure 4. STM32F20x block diagram
1. The timers connected to APB2 are clocked from TIMxCLK up to 120 MHz, while the timers connected to APB1 are clocked
from TIMxCLK up to 60 MHz.
2. The camera interface and Ethernet are available only in STM32F207xx devices.
GPIO PORT A
AHB/APB2
140 AF EXT IT. WKUP
PA[15:0]
PB[15:0] GPIO PORT B
TIM1 / PWM
4 compl. channels (TIM1_CH[1:4]N)
4 channels (TIM1_CH[1:4]), ETR,
BKIN as AF
TIM8 / PWM
PC[15:0] GPIO PORT C
RX, TX, CK, USART 1
CTS, RTS as AF
PD[15:0] GPIO PORT D
PE[15:0] GPIO PORT E
GPIO PORT F PF[15:0]
GPIO PORT G
PG[15:0]
MOSI, MISO SPI1
SCK, NSS as AF
APB2 60MHz
APB1 30MHz
8 analog inputs common
to the 3 ADCs
8 analog inputs common
to the ADC1 & 2
VDDREF_ADC
8 analog inputs to ADC3
4 channels, ETR as AF
4 channels, ETR as AF
4 channels, ETR as AF
4 channels
USART2 RX, TX, CK,
USART3 RX, TX, CK
UART4 RX, TX as AF
UART5 RX, TX as AF
SPI2/I2S2 MOSI/DOUT, MISO/DIN, SCK/CK NSS/WS, MCK as AF
SPI3/I2S3 MOSI/DOUT, MISO/DIN, SCK/CK NSS/WS, MCK as AF
I2C1/SMBUS SCL, SDA, SMBA as AF
I2C2/SMBUS SCL, SDA, SMBA as AF
bxCAN1 TX, RX
bxCAN2 TX, RX
DAC1_OUT
as AF
DAC2_OUT
as AF
ITF
WWDG
4 KB BKSPRAM
RTC_AF1
OSC32_IN
OSC_IN
OSC_OUT
OSC32_OUT
NRST
VDDA, VSSA
VCAP1, VCAP2
RX, TX, CK, USART 6
CTS, RTS as AF
smcard
irDA
smcard
irDA
smcard
irDA
smcard
irDA
16b
16b
32b
16b
16b
32b
16b
16b
CTS, RTS as AF
CTS, RTS as AF
SDIO / MMC
D[7:0]
CMD, CK as AF
VBAT = 1.65 to 3.6 V
DMA1
AHB/APB1
DMA2
I2C3/SMBUS SCL, SDA, SMBA as AF
PH[15:0] GPIO PORT H
PI[11:0] GPIO PORT I
JTAG & SW
D-BUS
S-BUS
I-BUS
ETM NVIC
MPU
NJTRST, JTDI,
JTDO/SWD
JTDO/TRACESWO
TRACECLK
TRACED[3:0]
JTCK/SWCLK
MII or RMII as AF Ethernet MAC DMA/
MDIO as AF 10/100 FIFO
USB DMA/
OTG HS FIFO
DP, DM
ULPI: CK, D(7:0), DIR, STP, NXT
DMA2 8 Streams
FIFO
DMA1 8 Streams
FIFO
ACCEL/
CACHE
SRAM 112 KB
SRAM 16 KB
CLK, NE [3:0], A[23:0]
D[31:0], OEN, WEN,
NBL[3:0], NL, NREG
NWAIT/IORDY, CD
NIORD, IOWR, INT[2:3]
INTN, NIIS16 as AF
SCL, SDA, INTN, ID, VBUS, SOF
Camera
interface
HSYNC, VSYNC
PIXCLK, D[13:0]
USB
PHY
OTG FS
DP
DM
FIFO FIFO
AHB1 120 MHz
PHY
FIFO
TUeSmApReTra 2tuMreB pssensor
ADC1
ADC2
ADC 3
IIFF
@VDDA
@VDDA
POR/PDR/
Supply
@VDDA
supervision
PVD
Reset
Int
POR
XTAL OSC
4-26 MHz
XTAL 32 kHz
HCLKx
MANAGT
RTC
RC HS
FCLK
RC LS
PWR
IWDG
@VBAT
@VDDA
@VDD
AWU
Reset &
clock
control
PLL1&2
PCLKx
interface
VDD = 1.8 to 3.6 V
VSS
Voltage
regulator
3.3 V to 1.2 V
VDD12
Power managmt
@VDD
Backup register RTC_AF1
SCL/SDA, INTN, ID, VBUS, SOF
AHB bus-matrix 8S7M
APB2 60MHz
AHB2 120 MHz
LS LS
2 channels as AF
1 channel as AF
TIM14 1 channel as AF
16b
16b
16b
2 channels as AF TIM9
1 channel as AF TIM10
16b
16b
1 channel as AF TIM11
16b
BOR
DAC1
DAC2
Flash
1 Mbyte
SRAM, PSRAM, NOR Flash,
PC Card (ATA), NAND Flash
External memory
controller (FSMC)
TIM6
TIM7
TIM2
TIM3
TIM4
TIM5
TIM12
TIM13
ai17614c
4 compl. channels (TIM1_CH[1:4]N)
4 channels (TIM1_CH[1:4]), ETR,
BKIN as AF
FIFO
RNG
ARM Cortex-M3
120 MHz
ART accelerator
APB1 30MHz
AHB3
Functional overview STM32F20xxx
18/178 DocID15818 Rev 11
3 Functional overview
3.1 ARM® Cortex™-M3 core with embedded Flash and SRAM
The ARM Cortex-M3 processor is the latest generation of ARM processors for embedded
systems. It was developed to provide a low-cost platform that meets the needs of MCU
implementation, with a reduced pin count and low-power consumption, while delivering
outstanding computational performance and an advanced response to interrupts.
The ARM Cortex-M3 32-bit RISC processor features exceptional code-efficiency, delivering
the high-performance expected from an ARM core in the memory size usually associated
with 8- and 16-bit devices.
With its embedded ARM core, the STM32F20x family is compatible with all ARM tools and
software.
Figure 4 shows the general block diagram of the STM32F20x family.
3.2 Adaptive real-time memory accelerator (ART Accelerator™)
The ART Accelerator™ is a memory accelerator which is optimized for STM32 industrystandard
ARM® Cortex™-M3 processors. It balances the inherent performance advantage
of the ARM Cortex-M3 over Flash memory technologies, which normally requires the
processor to wait for the Flash memory at higher operating frequencies.
To release the processor full 150 DMIPS performance at this frequency, the accelerator
implements an instruction prefetch queue and branch cache which increases program
execution speed from the 128-bit Flash memory. Based on CoreMark benchmark, the
performance achieved thanks to the ART accelerator is equivalent to 0 wait state program
execution from Flash memory at a CPU frequency up to 120 MHz.
3.3 Memory protection unit
The memory protection unit (MPU) is used to manage the CPU accesses to memory to
prevent one task to accidentally corrupt the memory or resources used by any other active
task. This memory area is organized into up to 8 protected areas that can in turn be divided
up into 8 subareas. The protection area sizes are between 32 bytes and the whole 4
gigabytes of addressable memory.
The MPU is especially helpful for applications where some critical or certified code has to be
protected against the misbehavior of other tasks. It is usually managed by an RTOS (realtime
operating system). If a program accesses a memory location that is prohibited by the
MPU, the RTOS can detect it and take action. In an RTOS environment, the kernel can
dynamically update the MPU area setting, based on the process to be executed.
The MPU is optional and can be bypassed for applications that do not need it.
DocID15818 Rev 11 19/178
STM32F20xxx Functional overview
177
3.4 Embedded Flash memory
The STM32F20x devices embed a 128-bit wide Flash memory of 128 Kbytes, 256 Kbytes,
512 Kbytes, 768 Kbytes or 1 Mbytes available for storing programs and data.
The devices also feature 512 bytes of OTP memory that can be used to store critical user
data such as Ethernet MAC addresses or cryptographic keys.
3.5 CRC (cyclic redundancy check) calculation unit
The CRC (cyclic redundancy check) calculation unit is used to get a CRC code from a 32-bit
data word and a fixed generator polynomial.
Among other applications, CRC-based techniques are used to verify data transmission or
storage integrity. In the scope of the EN/IEC 60335-1 standard, they offer a means of
verifying the Flash memory integrity. The CRC calculation unit helps compute a software
signature during runtime, to be compared with a reference signature generated at link-time
and stored at a given memory location.
3.6 Embedded SRAM
All STM32F20x products embed:
• Up to 128 Kbytes of system SRAM accessed (read/write) at CPU clock speed with 0
wait states
• 4 Kbytes of backup SRAM.
The content of this area is protected against possible unwanted write accesses, and is
retained in Standby or VBAT mode.
3.7 Multi-AHB bus matrix
The 32-bit multi-AHB bus matrix interconnects all the masters (CPU, DMAs, Ethernet, USB
HS) and the slaves (Flash memory, RAM, FSMC, AHB and APB peripherals) and ensures a
seamless and efficient operation even when several high-speed peripherals work
simultaneously.
Functional overview STM32F20xxx
20/178 DocID15818 Rev 11
Figure 5. Multi-AHB matrix
3.8 DMA controller (DMA)
The devices feature two general-purpose dual-port DMAs (DMA1 and DMA2) with 8
streams each. They are able to manage memory-to-memory, peripheral-to-memory and
memory-to-peripheral transfers. They share some centralized FIFOs for APB/AHB
peripherals, support burst transfer and are designed to provide the maximum peripheral
bandwidth (AHB/APB).
The two DMA controllers support circular buffer management, so that no specific code is
needed when the controller reaches the end of the buffer. The two DMA controllers also
have a double buffering feature, which automates the use and switching of two memory
buffers without requiring any special code.
Each stream is connected to dedicated hardware DMA requests, with support for software
trigger on each stream. Configuration is made by software and transfer sizes between
source and destination are independent.
ARM
Cortex-M3
GP
DMA1
GP
DMA2
MAC
Ethernet
USB OTG
HS
Bus matrix-S
S0 S1 S2 S3 S4 S5 S6 S7
ICODE
DCODE
ART
ACCEL.
Flash
memory
SRAM
112 Kbyte
SRAM
16 Kbyte
AHB1
periph
AHB2
periph
FSMC
Static MemCtl
M0
M1
M2
M3
M4
M5
M6
I-bus
D-bus
S-bus
DMA_P1
DMA_MEM1
DMA_MEM2
DMA_P2
ETHERNET_M
USB_HS_M
ai15963c
APB1
APB2
DocID15818 Rev 11 21/178
STM32F20xxx Functional overview
177
The DMA can be used with the main peripherals:
• SPI and I2S
• I2C
• USART and UART
• General-purpose, basic and advanced-control timers TIMx
• DAC
• SDIO
• Camera interface (DCMI)
• ADC.
3.9 Flexible static memory controller (FSMC)
The FSMC is embedded in all STM32F20x devices. It has four Chip Select outputs
supporting the following modes: PC Card/Compact Flash, SRAM, PSRAM, NOR Flash and
NAND Flash.
Functionality overview:
• Write FIFO
• Code execution from external memory except for NAND Flash and PC Card
• Maximum frequency (fHCLK) for external access is 60 MHz
LCD parallel interface
The FSMC can be configured to interface seamlessly with most graphic LCD controllers. It
supports the Intel 8080 and Motorola 6800 modes, and is flexible enough to adapt to
specific LCD interfaces. This LCD parallel interface capability makes it easy to build costeffective
graphic applications using LCD modules with embedded controllers or high
performance solutions using external controllers with dedicated acceleration.
3.10 Nested vectored interrupt controller (NVIC)
The STM32F20x devices embed a nested vectored interrupt controller able to manage 16
priority levels, and handle up to 81 maskable interrupt channels plus the 16 interrupt lines of
the Cortex™-M3.
The NVIC main features are the following:
• Closely coupled NVIC gives low-latency interrupt processing
• Interrupt entry vector table address passed directly to the core
• Closely coupled NVIC core interface
• Allows early processing of interrupts
• Processing of late arriving, higher-priority interrupts
• Support tail chaining
• Processor state automatically saved
• Interrupt entry restored on interrupt exit with no instruction overhead
This hardware block provides flexible interrupt management features with minimum interrupt
latency.
Functional overview STM32F20xxx
22/178 DocID15818 Rev 11
3.11 External interrupt/event controller (EXTI)
The external interrupt/event controller consists of 23 edge-detector lines used to generate
interrupt/event requests. Each line can be independently configured to select the trigger
event (rising edge, falling edge, both) and can be masked independently. A pending register
maintains the status of the interrupt requests. The EXTI can detect an external line with a
pulse width shorter than the Internal APB2 clock period. Up to 140 GPIOs can be connected
to the 16 external interrupt lines.
3.12 Clocks and startup
On reset the 16 MHz internal RC oscillator is selected as the default CPU clock. The
16 MHz internal RC oscillator is factory-trimmed to offer 1% accuracy. The application can
then select as system clock either the RC oscillator or an external 4-26 MHz clock source.
This clock is monitored for failure. If failure is detected, the system automatically switches
back to the internal RC oscillator and a software interrupt is generated (if enabled). Similarly,
full interrupt management of the PLL clock entry is available when necessary (for example if
an indirectly used external oscillator fails).
The advanced clock controller clocks the core and all peripherals using a single crystal or
oscillator. In particular, the ethernet and USB OTG FS peripherals can be clocked by the
system clock.
Several prescalers and PLLs allow the configuration of the three AHB buses, the highspeed
APB (APB2) and the low-speed APB (APB1) domains. The maximum frequency of
the three AHB buses is 120 MHz and the maximum frequency the high-speed APB domains
is 60 MHz. The maximum allowed frequency of the low-speed APB domain is 30 MHz.
The devices embed a dedicate PLL (PLLI2S) which allow to achieve audio class
performance. In this case, the I2S master clock can generate all standard sampling
frequencies from 8 kHz to 192 kHz.
3.13 Boot modes
At startup, boot pins are used to select one out of three boot options:
• Boot from user Flash
• Boot from system memory
• Boot from embedded SRAM
The boot loader is located in system memory. It is used to reprogram the Flash memory by
using USART1 (PA9/PA10), USART3 (PC10/PC11 or PB10/PB11), CAN2 (PB5/PB13), USB
OTG FS in Device mode (PA11/PA12) through DFU (device firmware upgrade).
3.14 Power supply schemes
• VDD = 1.8 to 3.6 V: external power supply for I/Os and the internal regulator (when
enabled), provided externally through VDD pins. On devices in WLCSP64+2 package, if
IRROFF is set to VDD, the supply voltage can drop to 1.7 V when the device operates
DocID15818 Rev 11 23/178
STM32F20xxx Functional overview
177
in the 0 to 70 °C temperature range using an external power supply supervisor (see
Section 3.16).
• VSSA, VDDA = 1.8 to 3.6 V: external analog power supplies for ADC, DAC, Reset
blocks, RCs and PLL. VDDA and VSSA must be connected to VDD and VSS, respectively.
• VBAT = 1.65 to 3.6 V: power supply for RTC, external clock, 32 kHz oscillator and
backup registers (through power switch) when VDD is not present.
Refer to Figure 19: Power supply scheme for more details.
3.15 Power supply supervisor
The devices have an integrated power-on reset (POR) / power-down reset (PDR) circuitry
coupled with a Brownout reset (BOR) circuitry.
At power-on, POR/PDR is always active and ensures proper operation starting from 1.8 V.
After the 1.8 V POR threshold level is reached, the option byte loading process starts, either
to confirm or modify default BOR threshold levels, or to disable BOR permanently. Three
BOR thresholds are available through option bytes.
The device remains in reset mode when VDD is below a specified threshold, VPOR/PDR or
VBOR, without the need for an external reset circuit. On devices in WLCSP64+2 package,
the BOR, POR and PDR features can be disabled by setting IRROFF pin to VDD. In this
mode an external power supply supervisor is required (see Section 3.16).
The devices also feature an embedded programmable voltage detector (PVD) that monitors
the VDD/VDDA power supply and compares it to the VPVD threshold. An interrupt can be
generated when VDD/VDDA drops below the VPVD threshold and/or when VDD/VDDA is
higher than the VPVD threshold. The interrupt service routine can then generate a warning
message and/or put the MCU into a safe state. The PVD is enabled by software.
3.16 Voltage regulator
The regulator has five operating modes:
• Regulator ON
– Main regulator mode (MR)
– Low power regulator (LPR)
– Power-down
• Regulator OFF
– Regulator OFF/internal reset ON
– Regulator OFF/internal reset OFF
3.16.1 Regulator ON
The regulator ON modes are activated by default on LQFP packages.On WLCSP64+2
package, they are activated by connecting both REGOFF and IRROFF pins to VSS, while
only REGOFF must be connected to VSS on UFBGA176 package (IRROFF is not available).
VDD minimum value is 1.8 V.
Functional overview STM32F20xxx
24/178 DocID15818 Rev 11
There are three power modes configured by software when the regulator is ON:
• MR is used in the nominal regulation mode
• LPR is used in Stop modes
The LP regulator mode is configured by software when entering Stop mode.
• Power-down is used in Standby mode.
The Power-down mode is activated only when entering Standby mode. The regulator
output is in high impedance and the kernel circuitry is powered down, inducing zero
consumption. The contents of the registers and SRAM are lost).
Two external ceramic capacitors should be connected on VCAP_1 and VCAP_2 pin. Refer to
Figure 19: Power supply scheme and Table 16: VCAP1/VCAP2 operating conditions.
All packages have the regulator ON feature.
3.16.2 Regulator OFF
This feature is available only on packages featuring the REGOFF pin. The regulator is
disabled by holding REGOFF high. The regulator OFF mode allows to supply externally a
V12 voltage source through VCAP_1 and VCAP_2 pins.
The two 2.2 μF ceramic capacitors should be replaced by two 100 nF decoupling
capacitors. Refer to Figure 19: Power supply scheme.
When the regulator is OFF, there is no more internal monitoring on V12. An external power
supply supervisor should be used to monitor the V12 of the logic power domain. PA0 pin
should be used for this purpose, and act as power-on reset on V12 power domain.
In regulator OFF mode, the following features are no more supported:
• PA0 cannot be used as a GPIO pin since it allows to reset the part of the 1.2 V logic
power domain which is not reset by the NRST pin.
• As long as PA0 is kept low, the debug mode cannot be used at power-on reset. As a
consequence, PA0 and NRST pins must be managed separately if the debug
connection at reset or pre-reset is required.
Regulator OFF/internal reset ON
On WLCSP64+2 package, this mode is activated by connecting REGOFF pin to VDD and
IRROFF pin to VSS. On UFBGA176 package, only REGOFF must be connected to VDD
(IRROFF not available). In this mode, VDD/VDDA minimum value is 1.8 V.
The regulator OFF/internal reset ON mode allows to supply externally a 1.2 V voltage
source through VCAP_1 and VCAP_2 pins, in addition to VDD.
DocID15818 Rev 11 25/178
STM32F20xxx Functional overview
177
Figure 6. Regulator OFF/internal reset ON
The following conditions must be respected:
• VDD should always be higher than VCAP_1 and VCAP_2 to avoid current injection
between power domains.
• If the time for VCAP_1 and VCAP_2 to reach 1.08 V is faster than the time for VDD to
reach 1.8 V, then PA0 should be kept low to cover both conditions: until VCAP_1 and
VCAP_2 reach 1.08 V and until VDD reaches 1.8 V (see Figure 8).
• Otherwise, If the time for VCAP_1 and VCAP_2 to reach 1.08 V is slower than the time for
VDD to reach 1.8 V, then PA0 should be asserted low externally (see Figure 9).
• If VCAP_1 and VCAP_2 go below 1.08 V and VDD is higher than 1.8 V, then a reset must
be asserted on PA0 pin.
Regulator OFF/internal reset OFF
On WLCSP64+2 package, this mode activated by connecting REGOFF to VSS and IRROFF
to VDD. IRROFF cannot be activated in conjunction with REGOFF. This mode is available
only on the WLCSP64+2 package. It allows to supply externally a 1.2 V voltage source
through VCAP_1 and VCAP_2 pins. In this mode, the integrated power-on reset (POR)/ powerdown
reset (PDR) circuitry is disabled.
An external power supply supervisor should monitor both the external 1.2 V and the external
VDD supply voltage, and should maintain the device in reset mode as long as they remain
below a specified threshold. The VDD specified threshold, below which the device must be
maintained under reset, is 1.8 V. This supply voltage can drop to 1.7 V when the device
operates in the 0 to 70 °C temperature range. A comprehensive set of power-saving modes
allows to design low-power applications.
ai18476b
REGOFF
VCAP_1
VCAP_2
PA0
1.2 V
VDD
(1.8 to 3.6 V)
Power-down reset risen
before VCAP_1/VCAP_2 stabilization
NRST
IRROFF
VDD
Application reset
signal (optional)
External VCAP_1/2
power supply supervisor
Ext. reset controller active
when VCAP_1/2 < 1.08 V
Functional overview STM32F20xxx
26/178 DocID15818 Rev 11
Figure 7. Regulator OFF/internal reset OFF
The following conditions must be respected:
• VDD should always be higher than VCAP_1 and VCAP_2 to avoid current injection
between power domains (see Figure 8).
• PA0 should be kept low to cover both conditions: until VCAP_1 and VCAP_2 reach 1.08 V,
and until VDD reaches 1.7 V.
• NRST should be controlled by an external reset controller to keep the device under
reset when VDD is below 1.7 V (see Figure 9).
In this mode, when the internal reset is OFF, the following integrated features are no more
supported:
• The integrated power-on reset (POR) / power-down reset (PDR) circuitry is disabled.
• The brownout reset (BOR) circuitry is disabled.
• The embedded programmable voltage detector (PVD) is disabled.
• VBAT functionality is no more available and VBAT pin should be connected to VDD.
REGOFF
VCAP_1
ai18477b
VCAP_2
NRST
1.2 V
IRROFF
VDD
VDD 1.2 V
External VDD/VCAP_1/2
power supply supervisor
Ext. reset controller active
when VDD<1.7V and
VCAP_1/2 < 1.08 V
PA0
DocID15818 Rev 11 27/178
STM32F20xxx Functional overview
177
Figure 8. Startup in regulator OFF: slow VDD slope
- power-down reset risen after VCAP_1/VCAP_2 stabilization
1. This figure is valid both whatever the internal reset mode (ON or OFF).
Figure 9. Startup in regulator OFF: fast VDD slope
- power-down reset risen before VCAP_1/VCAP_2 stabilization
VDD
time
1.08 V
PDR=1.8 V
VCAP_1/V 1.2 V CAP_2
time
PA0 tied to NRST
NRST
VDD
time
1.08 V
PDR=1.8 V
VCAP_1/VCAP_2 1.2 V
time
PA0 asserted externally
NRST
Functional overview STM32F20xxx
28/178 DocID15818 Rev 11
3.16.3 Regulator ON/OFF and internal reset ON/OFF availability
3.17 Real-time clock (RTC), backup SRAM and backup registers
The backup domain of the STM32F20x devices includes:
• The real-time clock (RTC)
• 4 Kbytes of backup SRAM
• 20 backup registers
The real-time clock (RTC) is an independent BCD timer/counter. Its main features are the
following:
• Dedicated registers contain the second, minute, hour (in 12/24 hour), week day, date,
month, year, in BCD (binary-coded decimal) format.
• Automatic correction for 28, 29 (leap year), 30, and 31 day of the month.
• Programmable alarm and programmable periodic interrupts with wakeup from Stop and
Standby modes.
• It is clocked by a 32.768 kHz external crystal, resonator or oscillator, the internal lowpower
RC oscillator or the high-speed external clock divided by 128. The internal lowspeed
RC has a typical frequency of 32 kHz. The RTC can be calibrated using an
external 512 Hz output to compensate for any natural quartz deviation.
• Two alarm registers are used to generate an alarm at a specific time and calendar
fields can be independently masked for alarm comparison. To generate a periodic
interrupt, a 16-bit programmable binary auto-reload downcounter with programmable
resolution is available and allows automatic wakeup and periodic alarms from every
120 μs to every 36 hours.
• A 20-bit prescaler is used for the time base clock. It is by default configured to generate
a time base of 1 second from a clock at 32.768 kHz.
• Reference clock detection: a more precise second source clock (50 or 60 Hz) can be
used to enhance the calendar precision.
The 4-Kbyte backup SRAM is an EEPROM-like area.It can be used to store data which
need to be retained in VBAT and standby mode.This memory area is disabled to minimize
power consumption (see Section 3.18: Low-power modes). It can be enabled by software.
Table 4. Regulator ON/OFF and internal reset ON/OFF availability
Package Regulator ON/internal
reset ON
Regulator
OFF/internal reset ON
Regulator OFF/internal
reset OFF
LQFP64
LQFP100
LQFP144
LQFP176
Yes No No
WLCSP 64+2
Yes
REGOFF and IRROFF
set to VSS
Yes
REGOFF set to VDD
and IRROFF set to VSS
Yes
REGOFF set to VSS and
IRROFF set to VDD
UFBGA176
Yes
REGOFF set to VSS
Yes
REGOFF set to VDD
No
DocID15818 Rev 11 29/178
STM32F20xxx Functional overview
177
The backup registers are 32-bit registers used to store 80 bytes of user application data
when VDD power is not present. Backup registers are not reset by a system, a power reset,
or when the device wakes up from the Standby mode (see Section 3.18: Low-power
modes).
Like backup SRAM, the RTC and backup registers are supplied through a switch that is
powered either from the VDD supply when present or the VBAT pin.
3.18 Low-power modes
The STM32F20x family supports three low-power modes to achieve the best compromise
between low power consumption, short startup time and available wakeup sources:
• Sleep mode
In Sleep mode, only the CPU is stopped. All peripherals continue to operate and can
wake up the CPU when an interrupt/event occurs.
• Stop mode
The Stop mode achieves the lowest power consumption while retaining the contents of
SRAM and registers. All clocks in the 1.2 V domain are stopped, the PLL, the HSI RC
and the HSE crystal oscillators are disabled. The voltage regulator can also be put
either in normal or in low-power mode.
The device can be woken up from the Stop mode by any of the EXTI line. The EXTI line
source can be one of the 16 external lines, the PVD output, the RTC alarm / wakeup /
tamper / time stamp events, the USB OTG FS/HS wakeup or the Ethernet wakeup.
• Standby mode
The Standby mode is used to achieve the lowest power consumption. The internal
voltage regulator is switched off so that the entire 1.2 V domain is powered off. The
PLL, the HSI RC and the HSE crystal oscillators are also switched off. After entering
Standby mode, the SRAM and register contents are lost except for registers in the
backup domain and the backup SRAM when selected.
The device exits the Standby mode when an external reset (NRST pin), an IWDG reset,
a rising edge on the WKUP pin, or an RTC alarm / wakeup / tamper /time stamp event
occurs.
Note: The RTC, the IWDG, and the corresponding clock sources are not stopped when the device
enters the Stop or Standby mode.
3.19 VBAT operation
The VBAT pin allows to power the device VBAT domain from an external battery or an
external supercapacitor.
VBAT operation is activated when VDD is not present.
The VBAT pin supplies the RTC, the backup registers and the backup SRAM.
Note: When the microcontroller is supplied from VBAT, external interrupts and RTC alarm/events
do not exit it from VBAT operation.
When using WLCSP64+2 package, if IRROFF pin is connected to VDD, the VBAT
functionality is no more available and VBAT pin should be connected to VDD.
Functional overview STM32F20xxx
30/178 DocID15818 Rev 11
3.20 Timers and watchdogs
The STM32F20x devices include two advanced-control timers, eight general-purpose
timers, two basic timers and two watchdog timers.
All timer counters can be frozen in debug mode.
Table 5 compares the features of the advanced-control, general-purpose and basic timers.
3.20.1 Advanced-control timers (TIM1, TIM8)
The advanced-control timers (TIM1, TIM8) can be seen as three-phase PWM generators
multiplexed on 6 channels. They have complementary PWM outputs with programmable
inserted dead times. They can also be considered as complete general-purpose timers.
Their 4 independent channels can be used for:
• Input capture
• Output compare
• PWM generation (edge- or center-aligned modes)
• One-pulse mode output
Table 5. Timer feature comparison
Timer type Timer Counter
resolution
Counter
type
Prescaler
factor
DMA
request
generation
Capture/
compare
channels
Complementary
output
Max
interface
clock
Max
timer
clock
Advancedcontrol
TIM1,
TIM8 16-bit
Up,
Down,
Up/down
Any integer
between 1
and 65536
Yes 4 Yes 60 MHz 120
MHz
General
purpose
TIM2,
TIM5 32-bit
Up,
Down,
Up/down
Any integer
between 1
and 65536
Yes 4 No 30 MHz 60
MHz
TIM3,
TIM4 16-bit
Up,
Down,
Up/down
Any integer
between 1
and 65536
Yes 4 No 30 MHz 60
MHz
Basic TIM6,
TIM7 16-bit Up
Any integer
between 1
and 65536
Yes 0 No 30 MHz 60
MHz
General
purpose
TIM9 16-bit Up
Any integer
between 1
and 65536
No 2 No 60 MHz 120
MHz
TIM10,
TIM11 16-bit Up
Any integer
between 1
and 65536
No 1 No 60 MHz 120
MHz
TIM12 16-bit Up
Any integer
between 1
and 65536
No 2 No 30 MHz 60
MHz
TIM13,
TIM14 16-bit Up
Any integer
between 1
and 65536
No 1 No 30 MHz 60
MHz
DocID15818 Rev 11 31/178
STM32F20xxx Functional overview
177
If configured as standard 16-bit timers, they have the same features as the general-purpose
TIMx timers. If configured as 16-bit PWM generators, they have full modulation capability (0-
100%).
The TIM1 and TIM8 counters can be frozen in debug mode. Many of the advanced-control
timer features are shared with those of the standard TIMx timers which have the same
architecture. The advanced-control timer can therefore work together with the TIMx timers
via the Timer Link feature for synchronization or event chaining.
3.20.2 General-purpose timers (TIMx)
There are ten synchronizable general-purpose timers embedded in the STM32F20x devices
(see Table 5 for differences).
TIM2, TIM3, TIM4, TIM5
The STM32F20x include 4 full-featured general-purpose timers. TIM2 and TIM5 are 32-bit
timers, and TIM3 and TIM4 are 16-bit timers. The TIM2 and TIM5 timers are based on a 32-
bit auto-reload up/downcounter and a 16-bit prescaler. The TIM3 and TIM4 timers are based
on a 16-bit auto-reload up/downcounter and a 16-bit prescaler. They all feature 4
independent channels for input capture/output compare, PWM or one-pulse mode output.
This gives up to 16 input capture/output compare/PWMs on the largest packages.
The TIM2, TIM3, TIM4, TIM5 general-purpose timers can work together, or with the other
general-purpose timers and the advanced-control timers TIM1 and TIM8 via the Timer Link
feature for synchronization or event chaining.
The counters of TIM2, TIM3, TIM4, TIM5 can be frozen in debug mode. Any of these
general-purpose timers can be used to generate PWM outputs.
TIM2, TIM3, TIM4, TIM5 all have independent DMA request generation. They are capable
of handling quadrature (incremental) encoder signals and the digital outputs from 1 to 4 halleffect
sensors.
TIM10, TIM11 and TIM9
These timers are based on a 16-bit auto-reload upcounter and a 16-bit prescaler. TIM10 and
TIM11 feature one independent channel, whereas TIM9 has two independent channels for
input capture/output compare, PWM or one-pulse mode output. They can be synchronized
with the TIM2, TIM3, TIM4, TIM5 full-featured general-purpose timers. They can also be
used as simple time bases.
TIM12, TIM13 and TIM14
These timers are based on a 16-bit auto-reload upcounter and a 16-bit prescaler. TIM13 and
TIM14 feature one independent channel, whereas TIM12 has two independent channels for
input capture/output compare, PWM or one-pulse mode output. They can be synchronized
with the TIM2, TIM3, TIM4, TIM5 full-featured general-purpose timers.
They can also be used as simple time bases.
3.20.3 Basic timers TIM6 and TIM7
These timers are mainly used for DAC trigger and waveform generation. They can also be
used as a generic 16-bit time base.
Functional overview STM32F20xxx
32/178 DocID15818 Rev 11
3.20.4 Independent watchdog
The independent watchdog is based on a 12-bit downcounter and 8-bit prescaler. It is
clocked from an independent 32 kHz internal RC and as it operates independently from the
main clock, it can operate in Stop and Standby modes. It can be used either as a watchdog
to reset the device when a problem occurs, or as a free-running timer for application timeout
management. It is hardware- or software-configurable through the option bytes.
The counter can be frozen in debug mode.
3.20.5 Window watchdog
The window watchdog is based on a 7-bit downcounter that can be set as free-running. It
can be used as a watchdog to reset the device when a problem occurs. It is clocked from
the main clock. It has an early warning interrupt capability and the counter can be frozen in
debug mode.
3.20.6 SysTick timer
This timer is dedicated to real-time operating systems, but could also be used as a standard
downcounter. It features:
• A 24-bit downcounter
• Autoreload capability
• Maskable system interrupt generation when the counter reaches 0
• Programmable clock source
3.21 Inter-integrated circuit interface (I²C)
Up to three I2C bus interfaces can operate in multimaster and slave modes. They can
support the Standard- and Fast-modes. They support the 7/10-bit addressing mode and the
7-bit dual addressing mode (as slave). A hardware CRC generation/verification is
embedded.
They can be served by DMA and they support SMBus 2.0/PMBus.
3.22 Universal synchronous/asynchronous receiver transmitters
(UARTs/USARTs)
The STM32F20x devices embed four universal synchronous/asynchronous receiver
transmitters (USART1, USART2, USART3 and USART6) and two universal asynchronous
receiver transmitters (UART4 and UART5).
These six interfaces provide asynchronous communication, IrDA SIR ENDEC support,
multiprocessor communication mode, single-wire half-duplex communication mode and
have LIN Master/Slave capability. The USART1 and USART6 interfaces are able to
communicate at speeds of up to 7.5 Mbit/s. The other available interfaces communicate at
up to 3.75 Mbit/s.
USART1, USART2, USART3 and USART6 also provide hardware management of the CTS
and RTS signals, Smart Card mode (ISO 7816 compliant) and SPI-like communication
capability. All interfaces can be served by the DMA controller.
DocID15818 Rev 11 33/178
STM32F20xxx Functional overview
177
3.23 Serial peripheral interface (SPI)
The STM32F20x devices feature up to three SPIs in slave and master modes in full-duplex
and simplex communication modes. SPI1 can communicate at up to 30 Mbits/s, while SPI2
and SPI3 can communicate at up to 15 Mbit/s. The 3-bit prescaler gives 8 master mode
frequencies and the frame is configurable to 8 bits or 16 bits. The hardware CRC
generation/verification supports basic SD Card/MMC modes. All SPIs can be served by the
DMA controller.
The SPI interface can be configured to operate in TI mode for communications in master
mode and slave mode.
3.24 Inter-integrated sound (I2S)
Two standard I2S interfaces (multiplexed with SPI2 and SPI3) are available. They can
operate in master or slave mode, in half-duplex communication modes, and can be
configured to operate with a 16-/32-bit resolution as input or output channels. Audio
sampling frequencies from 8 kHz up to 192 kHz are supported. When either or both of the
I2S interfaces is/are configured in master mode, the master clock can be output to the
external DAC/CODEC at 256 times the sampling frequency.
All I2Sx interfaces can be served by the DMA controller.
3.25 SDIO
An SD/SDIO/MMC host interface is available, that supports MultiMediaCard System
Specification Version 4.2 in three different databus modes: 1-bit (default), 4-bit and 8-bit.
Table 6. USART feature comparison
USART
name
Standard
features
Modem
(RTS/CTS) LIN SPI
master irDA Smartcard
(ISO 7816)
Max. baud rate
in Mbit/s
(oversampling
by 16)
Max. baud rate
in Mbit/s
(oversampling
by 8)
APB
mapping
USART1 X X X X X X 1.87 7.5 APB2 (max.
60 MHz)
USART2 X X X X X X 1.87 3.75 APB1 (max.
30 MHz)
USART3 X X X X X X 1.87 3.75 APB1 (max.
30 MHz)
UART4 X - X - X - 1.87 3.75 APB1 (max.
30 MHz)
UART5 X - X - X - 3.75 3.75 APB1 (max.
30 MHz)
USART6 X X X X X X 3.75 7.5 APB2 (max.
60 MHz)
Functional overview STM32F20xxx
34/178 DocID15818 Rev 11
The interface allows data transfer at up to 48 MHz in 8-bit mode, and is compliant with the
SD Memory Card Specification Version 2.0.
The SDIO Card Specification Version 2.0 is also supported with two different databus
modes: 1-bit (default) and 4-bit.
The current version supports only one SD/SDIO/MMC4.2 card at any one time and a stack
of MMC4.1 or previous.
In addition to SD/SDIO/MMC, this interface is fully compliant with the CE-ATA digital
protocol Rev1.1.
3.26 Ethernet MAC interface with dedicated DMA and IEEE 1588
support
Peripheral available only on the STM32F207xx devices.
The STM32F207xx devices provide an IEEE-802.3-2002-compliant media access controller
(MAC) for ethernet LAN communications through an industry-standard mediumindependent
interface (MII) or a reduced medium-independent interface (RMII). The
STM32F207xx requires an external physical interface device (PHY) to connect to the
physical LAN bus (twisted-pair, fiber, etc.). the PHY is connected to the STM32F207xx MII
port using 17 signals for MII or 9 signals for RMII, and can be clocked using the 25 MHz
(MII) or 50 MHz (RMII) output from the STM32F207xx.
The STM32F207xx includes the following features:
• Supports 10 and 100 Mbit/s rates
• Dedicated DMA controller allowing high-speed transfers between the dedicated SRAM
and the descriptors (see the STM32F20x and STM32F21x reference manual for
details)
• Tagged MAC frame support (VLAN support)
• Half-duplex (CSMA/CD) and full-duplex operation
• MAC control sublayer (control frames) support
• 32-bit CRC generation and removal
• Several address filtering modes for physical and multicast address (multicast and
group addresses)
• 32-bit status code for each transmitted or received frame
• Internal FIFOs to buffer transmit and receive frames. The transmit FIFO and the
receive FIFO are both 2 Kbytes, that is 4 Kbytes in total
• Supports hardware PTP (precision time protocol) in accordance with IEEE 1588 2008
(PTP V2) with the time stamp comparator connected to the TIM2 input
• Triggers interrupt when system time becomes greater than target time
3.27 Controller area network (CAN)
The two CANs are compliant with the 2.0A and B (active) specifications with a bitrate up to 1
Mbit/s. They can receive and transmit standard frames with 11-bit identifiers as well as
extended frames with 29-bit identifiers. Each CAN has three transmit mailboxes, two receive
FIFOS with 3 stages and 28 shared scalable filter banks (all of them can be used even if one
DocID15818 Rev 11 35/178
STM32F20xxx Functional overview
177
CAN is used). The 256 bytes of SRAM which are allocated for each CAN are not shared
with any other peripheral.
3.28 Universal serial bus on-the-go full-speed (OTG_FS)
The devices embed an USB OTG full-speed device/host/OTG peripheral with integrated
transceivers. The USB OTG FS peripheral is compliant with the USB 2.0 specification and
with the OTG 1.0 specification. It has software-configurable endpoint setting and supports
suspend/resume. The USB OTG full-speed controller requires a dedicated 48 MHz clock
that is generated by a PLL connected to the HSE oscillator. The major features are:
• Combined Rx and Tx FIFO size of 320 × 35 bits with dynamic FIFO sizing
• Supports the session request protocol (SRP) and host negotiation protocol (HNP)
• 4 bidirectional endpoints
• 8 host channels with periodic OUT support
• HNP/SNP/IP inside (no need for any external resistor)
• For OTG/Host modes, a power switch is needed in case bus-powered devices are
connected
• Internal FS OTG PHY support
3.29 Universal serial bus on-the-go high-speed (OTG_HS)
The STM32F20x devices embed a USB OTG high-speed (up to 480 Mb/s) device/host/OTG
peripheral. The USB OTG HS supports both full-speed and high-speed operations. It
integrates the transceivers for full-speed operation (12 MB/s) and features a UTMI low-pin
interface (ULPI) for high-speed operation (480 MB/s). When using the USB OTG HS in HS
mode, an external PHY device connected to the ULPI is required.
The USB OTG HS peripheral is compliant with the USB 2.0 specification and with the OTG
1.0 specification. It has software-configurable endpoint setting and supports
suspend/resume. The USB OTG full-speed controller requires a dedicated 48 MHz clock
that is generated by a PLL connected to the HSE oscillator. The major features are:
• Combined Rx and Tx FIFO size of 1024× 35 bits with dynamic FIFO sizing
• Supports the session request protocol (SRP) and host negotiation protocol (HNP)
• 6 bidirectional endpoints
• 12 host channels with periodic OUT support
• Internal FS OTG PHY support
• External HS or HS OTG operation supporting ULPI in SDR mode. The OTG PHY is
connected to the microcontroller ULPI port through 12 signals. It can be clocked using
the 60 MHz output.
• Internal USB DMA
• HNP/SNP/IP inside (no need for any external resistor)
• For OTG/Host modes, a power switch is needed in case bus-powered devices are
connected
Functional overview STM32F20xxx
36/178 DocID15818 Rev 11
3.30 Audio PLL (PLLI2S)
The devices feature an additional dedicated PLL for audio I2S application. It allows to
achieve error-free I2S sampling clock accuracy without compromising on the CPU
performance, while using USB peripherals.
The PLLI2S configuration can be modified to manage an I2S sample rate change without
disabling the main PLL (PLL) used for CPU, USB and Ethernet interfaces.
The audio PLL can be programmed with very low error to obtain sampling rates ranging
from 8 kHz to 192 kHz.
In addition to the audio PLL, a master clock input pin can be used to synchronize the I2S
flow with an external PLL (or Codec output).
3.31 Digital camera interface (DCMI)
The camera interface is not available in STM32F205xx devices.
STM32F207xx products embed a camera interface that can connect with camera modules
and CMOS sensors through an 8-bit to 14-bit parallel interface, to receive video data. The
camera interface can sustain up to 27 Mbyte/s at 27 MHz or 48 Mbyte/s at 48 MHz. It
features:
• Programmable polarity for the input pixel clock and synchronization signals
• Parallel data communication can be 8-, 10-, 12- or 14-bit
• Supports 8-bit progressive video monochrome or raw Bayer format, YCbCr 4:2:2
progressive video, RGB 565 progressive video or compressed data (like JPEG)
• Supports continuous mode or snapshot (a single frame) mode
• Capability to automatically crop the image
3.32 True random number generator (RNG)
All STM32F2xxx products embed a true RNG that delivers 32-bit random numbers
produced by an integrated analog circuit.
3.33 GPIOs (general-purpose inputs/outputs)
Each of the GPIO pins can be configured by software as output (push-pull or open-drain,
with or without pull-up or pull-down), as input (floating, with or without pull-up or pull-down)
or as peripheral alternate function. Most of the GPIO pins are shared with digital or analog
alternate functions. All GPIOs are high-current-capable and have speed selection to better
manage internal noise, power consumption and electromagnetic emission.
The I/O alternate function configuration can be locked if needed by following a specific
sequence in order to avoid spurious writing to the I/Os registers.
To provide fast I/O handling, the GPIOs are on the fast AHB1 bus with a clock up to
120 MHz that leads to a maximum I/O toggling speed of 60 MHz.
DocID15818 Rev 11 37/178
STM32F20xxx Functional overview
177
3.34 ADCs (analog-to-digital converters)
Three 12-bit analog-to-digital converters are embedded and each ADC shares up to 16
external channels, performing conversions in the single-shot or scan mode. In scan mode,
automatic conversion is performed on a selected group of analog inputs.
Additional logic functions embedded in the ADC interface allow:
• Simultaneous sample and hold
• Interleaved sample and hold
The ADC can be served by the DMA controller. An analog watchdog feature allows very
precise monitoring of the converted voltage of one, some or all selected channels. An
interrupt is generated when the converted voltage is outside the programmed thresholds.
The events generated by the timers TIM1, TIM2, TIM3, TIM4, TIM5 and TIM8 can be
internally connected to the ADC start trigger and injection trigger, respectively, to allow the
application to synchronize A/D conversion and timers.
3.35 DAC (digital-to-analog converter)
The two 12-bit buffered DAC channels can be used to convert two digital signals into two
analog voltage signal outputs. The design structure is composed of integrated resistor
strings and an amplifier in inverting configuration.
This dual digital Interface supports the following features:
• two DAC converters: one for each output channel
• 8-bit or 12-bit monotonic output
• left or right data alignment in 12-bit mode
• synchronized update capability
• noise-wave generation
• triangular-wave generation
• dual DAC channel independent or simultaneous conversions
• DMA capability for each channel
• external triggers for conversion
• input voltage reference VREF+
Eight DAC trigger inputs are used in the device. The DAC channels are triggered through
the timer update outputs that are also connected to different DMA streams.
3.36 Temperature sensor
The temperature sensor has to generate a voltage that varies linearly with temperature. The
conversion range is between 1.8 and 3.6 V. The temperature sensor is internally connected
to the ADC1_IN16 input channel which is used to convert the sensor output voltage into a
digital value.
As the offset of the temperature sensor varies from chip to chip due to process variation, the
internal temperature sensor is mainly suitable for applications that detect temperature
changes instead of absolute temperatures. If an accurate temperature reading is needed,
then an external temperature sensor part should be used.
Functional overview STM32F20xxx
38/178 DocID15818 Rev 11
3.37 Serial wire JTAG debug port (SWJ-DP)
The ARM SWJ-DP interface is embedded, and is a combined JTAG and serial wire debug
port that enables either a serial wire debug or a JTAG probe to be connected to the target.
The JTAG TMS and TCK pins are shared with SWDIO and SWCLK, respectively, and a
specific sequence on the TMS pin is used to switch between JTAG-DP and SW-DP.
3.38 Embedded Trace Macrocell™
The ARM Embedded Trace Macrocell provides a greater visibility of the instruction and data
flow inside the CPU core by streaming compressed data at a very high rate from the
STM32F20x through a small number of ETM pins to an external hardware trace port
analyzer (TPA) device. The TPA is connected to a host computer using USB, Ethernet, or
any other high-speed channel. Real-time instruction and data flow activity can be recorded
and then formatted for display on the host computer that runs the debugger software. TPA
hardware is commercially available from common development tool vendors.
The Embedded Trace Macrocell operates with third party debugger software tools.
DocID15818 Rev 11 39/178
STM32F20xxx Pinouts and pin description
177
4 Pinouts and pin description
Figure 10. STM32F20x LQFP64 pinout
1. The above figure shows the package top view.
Figure 11. STM32F20x WLCSP64+2 ballout
1. The above figure shows the package top view.
64 63 62 61 60 59 58 57 56 55 54 53 52 51 50 49
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
VBAT
PC14-OSC32_IN
PC15-OSC32_OUT
NRST
PC0
PC1
PC2
PC3
VSSA
VDDA
PA0-WKUP
PA1
PA2
VDD
VSS
PB9
PB8
BOOT0
PB7
PB6
PB5
PB4
PB3
PD2
PC12
PC11
PC10
PA15
PA14
VDD
VCAP_2
PA13
PA12
PA11
PA10
PA9
PA8
PC9
PC8
PC7
PC6
PB15
PB14
PB13
PB12
PA3
PA4
PA5
PA6
PA7
PC4
PC5
PB0
PB1
PB2
PB10
PB11
VCAP_1
VDD
LQFP64
ai15969c
PC13-RTC_AF1
PH0-OSC_IN
PH1-OSC_OUT
VDD
VSS
1 2 3 8
A PA14 PA15 PC12 PB3 PB5 PB7 PB9 VDD
B PA13 PC10 PB4 PB6 BOOT0 PB8 PC13
C PA12 VCAP_2 PC11 PD2 IRROFF
D PC9 PA11 PA10 PC2
E PA8 PA9
F PC7 PC8
G PB15 PC6 PC5 PA3 PC3
H PB14 PB13 PB10 PC4
J PB12 PB1 1 VCAP_1 PB2 PB0 PA7 PA4
ai18470c
4 5 6 7 9
VBAT
VSS PC14
PC15
VSS VDD
VDD PA0 NRST PH0-
OSC_IN
VSS VREF+ PC1
PH1-
OSC_OUT
PC0
PA6 PA5 REGOFF PA1 VSS_5
PB1 PA2
Pinouts and pin description STM32F20xxx
40/178 DocID15818 Rev 11
Figure 12. STM32F20x LQFP100 pinout
1. RFU means “reserved for future use”. This pin can be tied to VDD,VSS or left unconnected.
2. The above figure shows the package top view.
100
99
98
97
96
95
94
93
92
91
90
89
88
87
86
85
84
83
82
81
80
79
78
77
76
123456789
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
75
74
73
72
71
70
69
68
67
66
65
64
63
62
61
60
59
58
57
56
55
54
53
52
51
PE2
PE3
PE4
PE5
PE6
VBAT
PC14-OSC32_IN
PC15-OSC32_OUT
VSS
VDD
PH0-OSC_IN
NRST
PC0
PC1
PC2
PC3
VDD
VSSA
VREF+
VDDA
PA0-WKUP
PA1
PA2
VDD
VSS
VCAP_2
PA13
PA 12
PA11
PA10
PA 9
PA 8
PC9
PC8
PC7
PC6
PD15
PD14
PD13
PD12
PD11
PD10
PD9
PD8
PB15
PB14
PB13
PB12
PA3
VSS
VDD
PA4
PA5
PA6
PA7
PC4
PC5
PB0
PB1
PB2
PE7
PE8
PE9
PE10
PE11
PE12
PE13
PE14
PE15
PB10
PB11
VCAP_1
VDD
RFU
VDD
PE1
PE0
PB9
PB8
BOOT0
PB7
PB6
PB5
PB4
PB3
PD7
PD6
PD5
PD4
PD3
PD2
PD1
PD0
PC12
PC11
PC10
PA15
PA14
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
49
50
ai15970e
LQFP100
PC13-RTC_AF1
PH1-OSC_OUT
DocID15818 Rev 11 41/178
STM32F20xxx Pinouts and pin description
177
Figure 13. STM32F20x LQFP144 pinout
1. RFU means “reserved for future use”. This pin can be tied to VDD,VSS or left unconnected.
2. The above figure shows the package top view.
RFU
VDD
PE1
PE0
PB9
PB8
BOOT0
PB7
PB6
PB5
PB4
PB3
PG15
VDD
VSS
PG14
PG13
PG12
PG11
PG10
PG9
PD7
PD6
VDD
VSS
PD5
PD4
PD3
PD2
PD1
PD0
PC12
PC11
PC10
PA15
PA14
PE2 VDD PE3 VSS PE4
PE5 PA13
PE6 PA12
VBAT PA11
PC13-RTC_AF1 PA10
PC14-OSC32_IN PA9
PC15-OSC32_OUT PA8
PF0 PC9
PF1 PC8
PF2 PC7
PF3 PC6
PF4 VDD PF5 VSS VSS PG8
VDD PG7
PF6 PG6
PF7 PG5
PF8 PG4
PF9 PG3
PF10 PG2
PH0-OSC_IN PD15
PH1-OSC_OUT PD14
NRST VDD PC0 VSS PC1 PD13
PC2 PD12
PC3 PD11
VSSA
VDD PD10
PD9
VREF+ PD8
VDDA PB15
PA0-WKUP PB14
PA1 PB13
PA2 PB12
PA3
VSS
VDD
PA4
PA5
PA6
PA7
PC4
PC5
PB0
PB1
PB2
PF11
PF12
VSS
VDD
PF13
PF14
PF15
PG0
PG1
PE7
PE8
PE9
VSS
VDD
PE10
PE11
PE12
PE13
PE14
PE15
PB10
PB11
VCAP_1
VDD
144
143
142
141
140
139
138
137
136
135
134
133
132
131
130
129
128
127
126
125
124
123
122
121
109
123456789
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
108
107
106
105
104
103
102
101
100
99
98
97
96
95
94
93
92
91
90
89
88
87
86
85
84
37
38
39
40
41
42
43
44
45
46
47
48
49
50
51
52
53
54
55
56
57
58
59
60
72
LQFP144
120
119
118
117
116
115
114
113
112
111
110
61
62
63
64
65
66
67
68
69
70
71
26
27
28
29
30
31
32
33
34
35
36
83
82
81
80
79
78
77
76
75
74
73
ai15971e
VCAP_2
Pinouts and pin description STM32F20xxx
42/178 DocID15818 Rev 11
Figure 14. STM32F20x LQFP176 pinout
1. RFU means “reserved for future use”. This pin can be tied to VDD,VSS or left unconnected.
2. The above figure shows the package top view.
PDR_ON
VDD
PE1
PE0
PB9
PB8
BOOT0
PB7
PB6
PB5
PB4
PB3
PG15
VDD
VSS
PG14
PG13
PG12
PG11
PG10
PG9
PD7
PD6
VDD
VSS
PD5
PD4
PD3
PD2
PD1
PD0
PC12
PC11
PC10
PI7
PI6
PE2
VDD
PE3
VSS
PE4
PE5
PA13
PE6
PA12
VBAT
PA11
PI8-RTC_AF2
PA10
PC14-OSC32_IN
PA9
PC15-OSC32_OUT
PA8
PF0
PC9
PF1
PC8
PF2
PC7
PF3
PC6
PF4
VDD
PF5
VSS
VSS
PG8
VDD
PG7
PF6
PG6
PF7
PG5
PF8
PG4
PF9
PG3
PF10
PG2
PH0-OSC_IN
PD15
PH1-OSC_OUT
PD14
NRST
VDD
PC0
VSS
PC1
PD13
PC2
PD12
PC3
PD11
VSSA
PD10
VDD PD9
VREF+
PD8
VDDA
PB15
PA0-WKUP
PB14
PA1
PB13
PA2
PB12
PA3
VSS
VDD
PA4
PA5
PA6
PA7
PC4
PC5
PB0
PB1
PB2
PF11
PF12
VSS
VDD
PF13
PF14
PF15
PG0
PG1
PE7
PE8
PE9
VSS
VDD
PE10
PE11
PE12
PE13
PE14
PE15
PB10
PB11
VCAP_1
VDD
176
175
174
173
172
171
170
169
168
167
166
165
164
163
162
161
160
159
158
157
156
155
154
153
141
123456789
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
132
131
130
129
128
127
126
125
124
123
122
121
120
119
118
117
116
115
114
113
112
111
110
109
108
45
46
47
48
49
50
51
52
53
54
55
56
57
58
59
60
61
62
63
64
65
66
67
68
80
LQFP176
152
151
150
149
148
147
146
145
144
143
142
69
70
71
72
73
74
75
76
77
78
79
26
27
28
29
30
31
32
33
34
35
36
107
106
105
104
103
102
101
100
99
98
89
ai15972e
VCAP_2
PI4
PA15
PA14
VDD
VSS
PI3
PI2
PI5
140
139
138
137
136
135
134
133
PH4
PH5
PH6
PH7
PH8
PH9
PH10
PH11 88
81
82
83
84
85
86
87
PI1
PI0
PH15
PH14
PH13
VDD
VSS
PH12
96
95
94
93
92
91
90
97
37
38
39
40
41
42
43
44
PC13-RTC_AF1
PI9
PI10
PI11
VSS
VDD
PH2
PH3
DocID15818 Rev 11 43/178
STM32F20xxx Pinouts and pin description
177
Figure 15. STM32F20x UFBGA176 ballout
1. RFU means “reserved for future use”. This pin can be tied to VDD,VSS or left unconnected.
2. The above figure shows the package top view.
1 2 9 10 11 12 13 14 15
A PE3 PE2 PE1 PE0 PB8 PB5 PG14 PG13 PB4 PB3 PD7 PC12 PA15 PA14 PA13
B PE4 PE5 PE6 PB9 PB7 PB6 PG15 PG12 PG11 PG10 PD6 PD0 PC11 PC10 PA12
C VBAT PI7 PI6 PI5 VDD RFU VDD VDD VDD PG9 PD5 PD1 PI3 PI2 PA11
D PC13-
TAMP1
PI8-
TAMP2 PI9 PI4 BOOT0 VSS VSS VSS PD4 PD3 PD2 PH15 PI1 PA10
E PC14-
OSC32_IN PF0 PI10 PI11 PH13 PH14 PI0 PA9
F PC15-
OSC32_OUT VSS VDD PH2 VSS VSS VSS VSS VSS VSS VCAP_2 PC9 PA8
G PH0-
OSC_IN VSS VDD PH3 VSS VSS VSS VSS VSS VSS VDD PC8 PC7
H PH1-
OSC_OUT PF2 PF1 PH4 VSS VSS VSS VSS VSS VSS VDD PG8 PC6
J NRST PF3 PF4 PH5 VSS VSS VSS VSS VSS VDD VDD PG7 PG6
K PF7 PF6 PF5 VDD VSS VSS VSS VSS VSS PH12 PG5 PG4 PG3
L PF10 PF9 PF8 REGOFF PH11 PH10 PD15 PG2
M VSSA PC0 PC1 PC2 PC3 PB2 PG1 VSS VSS VCAP_1 PH6 PH8 PH9 PD14 PD13
N VREF- PA1
PA0-
WKUP PA4 PC4 PF13 PG0 VDD VDD VDD PE13 PH7 PD12 PD11 PD10
P VREF+ PA2 PA6 PA5 PC5 PF12 PF15 PE8 PE9 PE11 PE14 PB12 PB13 PD9 PD8
R VDDA PA3 PA7 PB1 PB0 PF11 PF14 PE7 PE10 PE12 PE15 PB10 PB11 PB14 PB15
ai17293c
VSS
3 4 5 6 7 8
Table 7. Legend/abbreviations used in the pinout table
Name Abbreviation Definition
Pin name Unless otherwise specified in brackets below the pin name, the pin function during and after
reset is the same as the actual pin name
Pin type
S Supply pin
I Input only pin
I/O Input/ output pin
I/O structure
FT 5 V tolerant I/O
TTa 3.3 V tolerant I/O
B Dedicated BOOT0 pin
NRST Bidirectional reset pin with embedded weak pull-up resistor
Notes Unless otherwise specified by a note, all I/Os are set as floating inputs during and after reset
Alternate
functions Functions selected through GPIOx_AFR registers
Additional
functions Functions directly selected/enabled through peripheral registers
Pinouts and pin description STM32F20xxx
44/178 DocID15818 Rev 11
Table 8. STM32F20x pin and ball definitions
Pins
Pin name
(function after
reset)(1)
Pin type
I/O structure
Note
Alternate functions Additional
functions
LQFP64
WLCSP64+2
LQFP100
LQFP144
LQFP176
UFBGA176
- - 1 1 1 A2 PE2 I/O FT TRACECLK, FSMC_A23,
ETH_MII_TXD3, EVENTOUT
- - 2 2 2 A1 PE3 I/O FT TRACED0,FSMC_A19,
EVENTOUT
- - 3 3 3 B1 PE4 I/O FT TRACED1,FSMC_A20,
DCMI_D4, EVENTOUT
- - 4 4 4 B2 PE5 I/O FT
TRACED2, FSMC_A21,
TIM9_CH1, DCMI_D6,
EVENTOUT
- - 5 5 5 B3 PE6 I/O FT
TRACED3, FSMC_A22,
TIM9_CH2, DCMI_D7,
EVENTOUT
1 A9 6 6 6 C1 VBAT S
- - - - 7 D2 PI8 I/O FT (2)(3) EVENTOUT RTC_AF2
2 B8 7 7 8 D1 PC13 I/O FT (2)(3) EVENTOUT RTC_AF1
3 B9 8 8 9 E1 PC14/OSC32_IN
(PC14) I/O FT (2)(3) EVENTOUT OSC32_IN(4)
4 C9 9 9 10 F1 PC15-OSC32_OUT
(PC15) I/O FT (2)(3) EVENTOUT OSC32_OUT(4)
- - - - 11 D3 PI9 I/O FT CAN1_RX,EVENTOUT
- - - - 12 E3 PI10 I/O FT ETH_MII_RX_ER,
EVENTOUT
- - - - 13 E4 PI11 I/O FT OTG_HS_ULPI_DIR,
EVENTOUT
- - - - 14 F2 VSS S
- - - - 15 F3 VDD S
- - - 10 16 E2 PF0 I/O FT FSMC_A0, I2C2_SDA,
EVENTOUT
- - - 11 17 H3 PF1 I/O FT FSMC_A1, I2C2_SCL,
EVENTOUT
- - - 12 18 H2 PF2 I/O FT FSMC_A2, I2C2_SMBA,
EVENTOUT
- - - 13 19 J2 PF3 I/O FT (4) FSMC_A3, EVENTOUT ADC3_IN9
DocID15818 Rev 11 45/178
STM32F20xxx Pinouts and pin description
177
- - - 14 20 J3 PF4 I/O FT (4) FSMC_A4, EVENTOUT ADC3_IN14
- - - 15 21 K3 PF5 I/O FT (4) FSMC_A5, EVENTOUT ADC3_IN15
- H9 10 16 22 G2 VSS S
- - 11 17 23 G3 VDD S
- - - 18 24 K2 PF6 I/O FT (4) TIM10_CH1, FSMC_NIORD,
EVENTOUT ADC3_IN4
- - - 19 25 K1 PF7 I/O FT (4) TIM11_CH1,FSMC_NREG,
EVENTOUT ADC3_IN5
- - - 20 26 L3 PF8 I/O FT (4) TIM13_CH1,
FSMC_NIOWR, EVENTOUT ADC3_IN6
- - - 21 27 L2 PF9 I/O FT (4) TIM14_CH1, FSMC_CD,
EVENTOUT ADC3_IN7
- - - 22 28 L1 PF10 I/O FT (4) FSMC_INTR, EVENTOUT ADC3_IN8
5 E9 12 23 29 G1 PH0/OSC_IN
(PH0) I/O FT EVENTOUT OSC_IN(4)
6 F9 13 24 30 H1 PH1/OSC_OUT
(PH1) I/O FT EVENTOUT OSC_OUT(4)
7 E8 14 25 31 J1 NRST I/O
8 G9 15 26 32 M2 PC0 I/O FT (4) OTG_HS_ULPI_STP,
EVENTOUT
ADC123_
IN10
9 F8 16 27 33 M3 PC1 I/O FT (4) ETH_MDC, EVENTOUT ADC123_
IN11
10 D7 17 28 34 M4 PC2 I/O FT (4)
SPI2_MISO,
OTG_HS_ULPI_DIR,
ETH_MII_TXD2, EVENTOUT
ADC123_
IN12
11 G8 18 29 35 M5 PC3 I/O FT (4)
SPI2_MOSI, I2S2_SD,
OTG_HS_ULPI_NXT,
ETH_MII_TX_CLK,
EVENTOUT
ADC123_
IN13
- - 19 30 36 - VDD S
12 - 20 31 37 M1 VSSA S
- - - - - N1 VREF- S
- F7 21 32 38 P1 VREF+ S
Table 8. STM32F20x pin and ball definitions (continued)
Pins
Pin name
(function after
reset)(1)
Pin type
I/O structure
Note
Alternate functions Additional
functions
LQFP64
WLCSP64+2
LQFP100
LQFP144
LQFP176
UFBGA176
Pinouts and pin description STM32F20xxx
46/178 DocID15818 Rev 11
13 - 22 33 39 R1 VDDA S
14 E7 23 34 40 N3 PA0-WKUP
(PA0) I/O FT (4)(5)
USART2_CTS, UART4_TX,
ETH_MII_CRS,
TIM2_CH1_ETR,
TIM5_CH1, TIM8_ETR,
EVENTOUT
ADC123_IN0,
WKUP
15 H8 24 35 41 N2 PA1 I/O FT (4)
USART2_RTS, UART4_RX,
ETH_RMII_REF_CLK,
ETH_MII_RX_CLK,
TIM5_CH2, TIM2_CH2,
EVENTOUT
ADC123_IN1
16 J9 25 36 42 P2 PA2 I/O FT (4)
USART2_TX,TIM5_CH3,
TIM9_CH1, TIM2_CH3,
ETH_MDIO, EVENTOUT
ADC123_IN2
- - - - 43 F4 PH2 I/O FT ETH_MII_CRS, EVENTOUT
- - - - 44 G4 PH3 I/O FT ETH_MII_COL, EVENTOUT
- - - - 45 H4 PH4 I/O FT
I2C2_SCL,
OTG_HS_ULPI_NXT,
EVENTOUT
- - - - 46 J4 PH5 I/O FT I2C2_SDA, EVENTOUT
17 G7 26 37 47 R2 PA3 I/O FT (4)
USART2_RX, TIM5_CH4,
TIM9_CH2, TIM2_CH4,
OTG_HS_ULPI_D0,
ETH_MII_COL, EVENTOUT
ADC123_IN3
18 F1 27 38 48 - VSS S
H7 L4 REGOFF I/O
19 E1 28 39 49 K4 VDD S
20 J8 29 40 50 N4 PA4 I/O TTa (4)
SPI1_NSS, SPI3_NSS,
USART2_CK,
DCMI_HSYNC,
OTG_HS_SOF, I2S3_WS,
EVENTOUT
ADC12_IN4,
DAC_OUT1
21 H6 30 41 51 P4 PA5 I/O TTa (4)
SPI1_SCK,
OTG_HS_ULPI_CK,
TIM2_CH1_ETR,
TIM8_CH1N, EVENTOUT
ADC12_IN5,
DAC_OUT2
Table 8. STM32F20x pin and ball definitions (continued)
Pins
Pin name
(function after
reset)(1)
Pin type
I/O structure
Note
Alternate functions Additional
functions
LQFP64
WLCSP64+2
LQFP100
LQFP144
LQFP176
UFBGA176
DocID15818 Rev 11 47/178
STM32F20xxx Pinouts and pin description
177
22 H5 31 42 52 P3 PA6 I/O FT (4)
SPI1_MISO, TIM8_BKIN,
TIM13_CH1, DCMI_PIXCLK,
TIM3_CH1, TIM1_BKIN,
EVENTOUT
ADC12_IN6
23 J7 32 43 53 R3 PA7 I/O FT (4)
SPI1_MOSI, TIM8_CH1N,
TIM14_CH1, TIM3_CH2,
ETH_MII_RX_DV,
TIM1_CH1N,
ETH_RMII_CRS_DV,
EVENTOUT
ADC12_IN7
24 H4 33 44 54 N5 PC4 I/O FT (4)
ETH_RMII_RXD0,
ETH_MII_RXD0,
EVENTOUT
ADC12_IN14
25 G3 34 45 55 P5 PC5 I/O FT (4)
ETH_RMII_RXD1,
ETH_MII_RXD1,
EVENTOUT
ADC12_IN15
26 J6 35 46 56 R5 PB0 I/O FT (4)
TIM3_CH3, TIM8_CH2N,
OTG_HS_ULPI_D1,
ETH_MII_RXD2,
TIM1_CH2N, EVENTOUT
ADC12_IN8
27 J5 36 47 57 R4 PB1 I/O FT (4)
TIM3_CH4, TIM8_CH3N,
OTG_HS_ULPI_D2,
ETH_MII_RXD3,
TIM1_CH3N, EVENTOUT
ADC12_IN9
28 J4 37 48 58 M6 PB2/BOOT1 (PB2) I/O FT EVENTOUT
- - - 49 59 R6 PF11 I/O FT DCMI_D12, EVENTOUT
- - - 50 60 P6 PF12 I/O FT FSMC_A6, EVENTOUT
- - - 51 61 M8 VSS S
- - - 52 62 N8 VDD S
- - - 53 63 N6 PF13 I/O FT FSMC_A7, EVENTOUT
- - - 54 64 R7 PF14 I/O FT FSMC_A8, EVENTOUT
- - - 55 65 P7 PF15 I/O FT FSMC_A9, EVENTOUT
- - - 56 66 N7 PG0 I/O FT FSMC_A10, EVENTOUT
- - - 57 67 M7 PG1 I/O FT FSMC_A11, EVENTOUT
Table 8. STM32F20x pin and ball definitions (continued)
Pins
Pin name
(function after
reset)(1)
Pin type
I/O structure
Note
Alternate functions Additional
functions
LQFP64
WLCSP64+2
LQFP100
LQFP144
LQFP176
UFBGA176
Pinouts and pin description STM32F20xxx
48/178 DocID15818 Rev 11
- - 38 58 68 R8 PE7 I/O FT FSMC_D4,TIM1_ETR,
EVENTOUT
- - 39 59 69 P8 PE8 I/O FT FSMC_D5,TIM1_CH1N,
EVENTOUT
- - 40 60 70 P9 PE9 I/O FT FSMC_D6,TIM1_CH1,
EVENTOUT
- - - 61 71 M9 VSS S
- - - 62 72 N9 VDD S
- - 41 63 73 R9 PE10 I/O FT FSMC_D7,TIM1_CH2N,
EVENTOUT
- - 42 64 74 P10 PE11 I/O FT FSMC_D8,TIM1_CH2,
EVENTOUT
- - 43 65 75 R10 PE12 I/O FT FSMC_D9,TIM1_CH3N,
EVENTOUT
- - 44 66 76 N11 PE13 I/O FT FSMC_D10,TIM1_CH3,
EVENTOUT
- - 45 67 77 P11 PE14 I/O FT FSMC_D11,TIM1_CH4,
EVENTOUT
- - 46 68 78 R11 PE15 I/O FT FSMC_D12,TIM1_BKIN,
EVENTOUT
29 H3 47 69 79 R12 PB10 I/O FT
SPI2_SCK, I2S2_SCK,
I2C2_SCL,USART3_TX,OT
G_HS_ULPI_D3,ETH_MII_R
X_ER,TIM2_CH3,
EVENTOUT
30 J2 48 70 80 R13 PB11 I/O FT
I2C2_SDA, USART3_RX,
OTG_HS_ULPI_D4,
ETH_RMII_TX_EN,
ETH_MII_TX_EN,
TIM2_CH4, EVENTOUT
31 J3 49 71 81 M10 VCAP_1 S
32 - 50 72 82 N10 VDD S
- - - - 83 M11 PH6 I/O FT
I2C2_SMBA, TIM12_CH1,
ETH_MII_RXD2,
EVENTOUT
Table 8. STM32F20x pin and ball definitions (continued)
Pins
Pin name
(function after
reset)(1)
Pin type
I/O structure
Note
Alternate functions Additional
functions
LQFP64
WLCSP64+2
LQFP100
LQFP144
LQFP176
UFBGA176
DocID15818 Rev 11 49/178
STM32F20xxx Pinouts and pin description
177
- - - - 84 N12 PH7 I/O FT I2C3_SCL, ETH_MII_RXD3,
EVENTOUT
- - - - 85 M12 PH8 I/O FT I2C3_SDA, DCMI_HSYNC,
EVENTOUT
- - - - 86 M13 PH9 I/O FT I2C3_SMBA, TIM12_CH2,
DCMI_D0, EVENTOUT
- - - - 87 L13 PH10 I/O FT TIM5_CH1, DCMI_D1,
EVENTOUT
- - - - 88 L12 PH11 I/O FT TIM5_CH2, DCMI_D2,
EVENTOUT
- - - - 89 K12 PH12 I/O FT TIM5_CH3, DCMI_D3,
EVENTOUT
- - - - 90 H12 VSS S
- - - - 91 J12 VDD S
33 J1 51 73 92 P12 PB12 I/O FT
SPI2_NSS, I2S2_WS,
I2C2_SMBA, USART3_CK,
TIM1_BKIN, CAN2_RX,
OTG_HS_ULPI_D5,
ETH_RMII_TXD0,
ETH_MII_TXD0,
OTG_HS_ID, EVENTOUT
34 H2 52 74 93 P13 PB13 I/O FT
SPI2_SCK, I2S2_SCK,
USART3_CTS, TIM1_CH1N,
CAN2_TX,
OTG_HS_ULPI_D6,
ETH_RMII_TXD1,
ETH_MII_TXD1, EVENTOUT
OTG_HS_
VBUS
35 H1 53 75 94 R14 PB14 I/O FT
SPI2_MISO, TIM1_CH2N,
TIM12_CH1, OTG_HS_DM
USART3_RTS, TIM8_CH2N,
EVENTOUT
36 G1 54 76 95 R15 PB15 I/O FT
SPI2_MOSI, I2S2_SD,
TIM1_CH3N, TIM8_CH3N,
TIM12_CH2, OTG_HS_DP,
RTC_50Hz, EVENTOUT
- - 55 77 96 P15 PD8 I/O FT FSMC_D13, USART3_TX,
EVENTOUT
Table 8. STM32F20x pin and ball definitions (continued)
Pins
Pin name
(function after
reset)(1)
Pin type
I/O structure
Note
Alternate functions Additional
functions
LQFP64
WLCSP64+2
LQFP100
LQFP144
LQFP176
UFBGA176
Pinouts and pin description STM32F20xxx
50/178 DocID15818 Rev 11
- - 56 78 97 P14 PD9 I/O FT FSMC_D14, USART3_RX,
EVENTOUT
- - 57 79 98 N15 PD10 I/O FT FSMC_D15, USART3_CK,
EVENTOUT
- - 58 80 99 N14 PD11 I/O FT FSMC_A16,USART3_CTS,
EVENTOUT
- - 59 81 100 N13 PD12 I/O FT FSMC_A17,TIM4_CH1,
USART3_RTS, EVENTOUT
- - 60 82 101 M15 PD13 I/O FT FSMC_A18,TIM4_CH2,
EVENTOUT
- - - 83102 - VSS S
- - - 84103J13 VDD S
- - 61 85 104 M14 PD14 I/O FT FSMC_D0,TIM4_CH3,
EVENTOUT
- - 62 86 105 L14 PD15 I/O FT FSMC_D1,TIM4_CH4,
EVENTOUT
- - - 87 106 L15 PG2 I/O FT FSMC_A12, EVENTOUT
- - - 88 107 K15 PG3 I/O FT FSMC_A13, EVENTOUT
- - - 89 108 K14 PG4 I/O FT FSMC_A14, EVENTOUT
- - - 90 109 K13 PG5 I/O FT FSMC_A15, EVENTOUT
- - - 91 110 J15 PG6 I/O FT FSMC_INT2, EVENTOUT
- - - 92 111 J14 PG7 I/O FT FSMC_INT3 ,USART6_CK,
EVENTOUT
- - - 93 112 H14 PG8 I/O FT
USART6_RTS,
ETH_PPS_OUT,
EVENTOUT
- - - 94 113G12 VSS S
- - - 95 114H13 VDD S
37 G2 63 96 115 H15 PC6 I/O FT
I2S2_MCK, TIM8_CH1,
SDIO_D6, USART6_TX,
DCMI_D0, TIM3_CH1,
EVENTOUT
Table 8. STM32F20x pin and ball definitions (continued)
Pins
Pin name
(function after
reset)(1)
Pin type
I/O structure
Note
Alternate functions Additional
functions
LQFP64
WLCSP64+2
LQFP100
LQFP144
LQFP176
UFBGA176
DocID15818 Rev 11 51/178
STM32F20xxx Pinouts and pin description
177
38 F2 64 97 116 G15 PC7 I/O FT
I2S3_MCK, TIM8_CH2,
SDIO_D7, USART6_RX,
DCMI_D1, TIM3_CH2,
EVENTOUT
39 F3 65 98 117 G14 PC8 I/O FT
TIM8_CH3,SDIO_D0,
TIM3_CH3, USART6_CK,
DCMI_D2, EVENTOUT
40 D1 66 99 118 F14 PC9 I/O FT
I2S2_CKIN, I2S3_CKIN,
MCO2, TIM8_CH4,
SDIO_D1, I2C3_SDA,
DCMI_D3, TIM3_CH4,
EVENTOUT
41 E2 67 100 119 F15 PA8 I/O FT
MCO1, USART1_CK,
TIM1_CH1, I2C3_SCL,
OTG_FS_SOF, EVENTOUT
42 E3 68 101 120 E15 PA9 I/O FT
USART1_TX, TIM1_CH2,
I2C3_SMBA, DCMI_D0,
EVENTOUT
OTG_FS_
VBUS
43 D3 69 102 121 D15 PA10 I/O FT
USART1_RX, TIM1_CH3,
OTG_FS_ID,DCMI_D1,
EVENTOUT
44 D2 70 103 122 C15 PA11 I/O FT
USART1_CTS, CAN1_RX,
TIM1_CH4,OTG_FS_DM,
EVENTOUT
45 C1 71 104 123 B15 PA12 I/O FT
USART1_RTS, CAN1_TX,
TIM1_ETR, OTG_FS_DP,
EVENTOUT
46 B2 72 105 124 A15 PA13
(JTMS-SWDIO) I/O FT JTMS-SWDIO, EVENTOUT
47 C2 73 106 125 F13 VCAP_2 S
- B1 74 107 126 F12 VSS S
48 A8 75 108 127 G13 VDD S
- - - - 128 E12 PH13 I/O FT TIM8_CH1N, CAN1_TX,
EVENTOUT
- - - - 129 E13 PH14 I/O FT TIM8_CH2N, DCMI_D4,
EVENTOUT
Table 8. STM32F20x pin and ball definitions (continued)
Pins
Pin name
(function after
reset)(1)
Pin type
I/O structure
Note
Alternate functions Additional
functions
LQFP64
WLCSP64+2
LQFP100
LQFP144
LQFP176
UFBGA176
Pinouts and pin description STM32F20xxx
52/178 DocID15818 Rev 11
- - - - 130 D13 PH15 I/O FT TIM8_CH3N, DCMI_D11,
EVENTOUT
- - - - 131E14 PI0 I/O FT
TIM5_CH4, SPI2_NSS,
I2S2_WS, DCMI_D13,
EVENTOUT
- - - - 132D14 PI1 I/O FT SPI2_SCK, I2S2_SCK,
DCMI_D8, EVENTOUT
- - - - 133C14 PI2 I/O FT TIM8_CH4 ,SPI2_MISO,
DCMI_D9, EVENTOUT
- - - - 134C13 PI3 I/O FT
TIM8_ETR, SPI2_MOSI,
I2S2_SD, DCMI_D10,
EVENTOUT
- - - - 135 D9 VSS S
- - - - 136 C9 VDD S
49 A1 76 109 137 A14 PA14
(JTCK-SWCLK) I/O FT JTCK-SWCLK, EVENTOUT
50 A2 77 110 138 A13 PA15 (JTDI) I/O FT
JTDI, SPI3_NSS,
I2S3_WS,TIM2_CH1_ETR,
SPI1_NSS, EVENTOUT
51 B3 78 111 139 B14 PC10 I/O FT
SPI3_SCK, I2S3_SCK,
UART4_TX, SDIO_D2,
DCMI_D8, USART3_TX,
EVENTOUT
52 C3 79 112 140 B13 PC11 I/O FT
UART4_RX, SPI3_MISO,
SDIO_D3,
DCMI_D4,USART3_RX,
EVENTOUT
53 A3 80 113 141 A12 PC12 I/O FT
UART5_TX, SDIO_CK,
DCMI_D9, SPI3_MOSI,
I2S3_SD, USART3_CK,
EVENTOUT
- - 81 114142B12 PD0 I/O FT FSMC_D2,CAN1_RX,
EVENTOUT
- - 82 115 143 C12 PD1 I/O FT FSMC_D3, CAN1_TX,
EVENTOUT
Table 8. STM32F20x pin and ball definitions (continued)
Pins
Pin name
(function after
reset)(1)
Pin type
I/O structure
Note
Alternate functions Additional
functions
LQFP64
WLCSP64+2
LQFP100
LQFP144
LQFP176
UFBGA176
DocID15818 Rev 11 53/178
STM32F20xxx Pinouts and pin description
177
54 C7 83 116 144 D12 PD2 I/O FT
TIM3_ETR,UART5_RX,
SDIO_CMD, DCMI_D11,
EVENTOUT
- - 84 117 145 D11 PD3 I/O FT FSMC_CLK,USART2_CTS,
EVENTOUT
- - 85 118 146 D10 PD4 I/O FT FSMC_NOE, USART2_RTS,
EVENTOUT
- - 86 119 147 C11 PD5 I/O FT FSMC_NWE,USART2_TX,
EVENTOUT
- - - 120 148 D8 VSS S
- - - 121 149 C8 VDD S
- - 87 122 150 B11 PD6 I/O FT FSMC_NWAIT,
USART2_RX, EVENTOUT
- - 88 123 151 A11 PD7 I/O FT USART2_CK,FSMC_NE1,
FSMC_NCE2, EVENTOUT
- - - 124 152 C10 PG9 I/O FT
USART6_RX,
FSMC_NE2,FSMC_NCE3,
EVENTOUT
- - - 125 153 B10 PG10 I/O FT FSMC_NCE4_1,
FSMC_NE3, EVENTOUT
- - - 126 154 B9 PG11 I/O FT
FSMC_NCE4_2,
ETH_MII_TX_EN ,
ETH _RMII_TX_EN,
EVENTOUT
- - - 127 155 B8 PG12 I/O FT FSMC_NE4, USART6_RTS,
EVENTOUT
- - - 128 156 A8 PG13 I/O FT
FSMC_A24, USART6_CTS,
ETH_MII_TXD0,
ETH_RMII_TXD0,
EVENTOUT
- - - 129 157 A7 PG14 I/O FT
FSMC_A25, USART6_TX,
ETH_MII_TXD1,
ETH_RMII_TXD1,
EVENTOUT
- - - 130 158 D7 VSS S
Table 8. STM32F20x pin and ball definitions (continued)
Pins
Pin name
(function after
reset)(1)
Pin type
I/O structure
Note
Alternate functions Additional
functions
LQFP64
WLCSP64+2
LQFP100
LQFP144
LQFP176
UFBGA176
Pinouts and pin description STM32F20xxx
54/178 DocID15818 Rev 11
- - - 131 159 C7 VDD S
- - - 132 160 B7 PG15 I/O FT USART6_CTS, DCMI_D13,
EVENTOUT
55 A4 89 133 161 A10 PB3
(JTDO/TRACESWO) I/O FT
JTDO/ TRACESWO,
SPI3_SCK, I2S3_SCK,
TIM2_CH2, SPI1_SCK,
EVENTOUT
56 B4 90 134 162 A9 PB4 I/O FT
NJTRST, SPI3_MISO,
TIM3_CH1, SPI1_MISO,
EVENTOUT
57 A5 91 135 163 A6 PB5 I/O FT
I2C1_SMBA, CAN2_RX,
OTG_HS_ULPI_D7,
ETH_PPS_OUT, TIM3_CH2,
SPI1_MOSI, SPI3_MOSI,
DCMI_D10, I2S3_SD,
EVENTOUT
58 B5 92 136 164 B6 PB6 I/O FT
I2C1_SCL,, TIM4_CH1,
CAN2_TX,
DCMI_D5,USART1_TX,
EVENTOUT
59 A6 93 137 165 B5 PB7 I/O FT
I2C1_SDA, FSMC_NL(6),
DCMI_VSYNC,
USART1_RX, TIM4_CH2,
EVENTOUT
60 B6 94 138 166 D6 BOOT0 I B VPP
61 B7 95 139 167 A5 PB8 I/O FT
TIM4_CH3,SDIO_D4,
TIM10_CH1, DCMI_D6,
ETH_MII_TXD3, I2C1_SCL,
CAN1_RX, EVENTOUT
62 A7 96 140 168 B4 PB9 I/O FT
SPI2_NSS, I2S2_WS,
TIM4_CH4, TIM11_CH1,
SDIO_D5, DCMI_D7,
I2C1_SDA, CAN1_TX,
EVENTOUT
- - 97 141 169 A4 PE0 I/O FT TIM4_ETR, FSMC_NBL0,
DCMI_D2, EVENTOUT
Table 8. STM32F20x pin and ball definitions (continued)
Pins
Pin name
(function after
reset)(1)
Pin type
I/O structure
Note
Alternate functions Additional
functions
LQFP64
WLCSP64+2
LQFP100
LQFP144
LQFP176
UFBGA176
DocID15818 Rev 11 55/178
STM32F20xxx Pinouts and pin description
177
- - 98 142 170 A3 PE1 I/O FT FSMC_NBL1, DCMI_D3,
EVENTOUT
- - - - - D5 VSS S
63 D8 - - - - VSS S
- - 99 143 171 C6 RFU (7)
64 D9 100 144 172 C5 VDD S
- - - - 173 D4 PI4 I/O FT TIM8_BKIN, DCMI_D5,
EVENTOUT
- - - - 174 C4 PI5 I/O FT TIM8_CH1, DCMI_VSYNC,
EVENTOUT
- - - - 175 C3 PI6 I/O FT TIM8_CH2, DCMI_D6,
EVENTOUT
- - - - 176 C2 PI7 I/O FT TIM8_CH3, DCMI_D7,
EVENTOUT
- C8 - - - - IRROFF I/O
1. Function availability depends on the chosen device.
2. PC13, PC14, PC15 and PI8 are supplied through the power switch. Since the switch only sinks a limited amount of current
(3 mA), the use of GPIOs PC13 to PC15 and PI8 in output mode is limited: the speed should not exceed 2 MHz with a
maximum load of 30 pF and these I/Os must not be used as a current source (e.g. to drive an LED).
3. Main function after the first backup domain power-up. Later on, it depends on the contents of the RTC registers even after
reset (because these registers are not reset by the main reset). For details on how to manage these I/Os, refer to the RTC
register description sections in the STM32F20x and STM32F21x reference manual, available from the STMicroelectronics
website: www.st.com.
4. FT = 5 V tolerant except when in analog mode or oscillator mode (for PC14, PC15, PH0 and PH1).
5. If the device is delivered in an UFBGA176 package and if the REGOFF pin is set to VDD (Regulator OFF), then PA0 is
used as an internal Reset (active low).
6. FSMC_NL pin is also named FSMC_NADV on memory devices.
7. RFU means “reserved for future use”. This pin can be tied to VDD,VSS or left unconnected.
Table 8. STM32F20x pin and ball definitions (continued)
Pins
Pin name
(function after
reset)(1)
Pin type
I/O structure
Note
Alternate functions Additional
functions
LQFP64
WLCSP64+2
LQFP100
LQFP144
LQFP176
UFBGA176
Table 9. FSMC pin definition
Pins
FSMC
LQFP100
CF NOR/PSRAM/S
RAM NOR/PSRAM Mux NAND 16 bit
PE2 A23 A23 Yes
PE3 A19 A19 Yes
Pinouts and pin description STM32F20xxx
56/178 DocID15818 Rev 11
PE4 A20 A20 Yes
PE5 A21 A21 Yes
PE6 A22 A22 Yes
PF0 A0 A0 -
PF1 A1 A1 -
PF2 A2 A2 -
PF3 A3 A3 -
PF4 A4 A4 -
PF5 A5 A5 -
PF6 NIORD -
PF7 NREG -
PF8 NIOWR -
PF9 CD -
PF10 INTR -
PF12 A6 A6 -
PF13 A7 A7 -
PF14 A8 A8 -
PF15 A9 A9 -
PG0 A10 A10 -
PG1 A11 -
PE7 D4 D4 DA4 D4 Yes
PE8 D5 D5 DA5 D5 Yes
PE9 D6 D6 DA6 D6 Yes
PE10 D7 D7 DA7 D7 Yes
PE11 D8 D8 DA8 D8 Yes
PE12 D9 D9 DA9 D9 Yes
PE13 D10 D10 DA10 D10 Yes
PE14 D11 D11 DA11 D11 Yes
PE15 D12 D12 DA12 D12 Yes
PD8 D13 D13 DA13 D13 Yes
PD9 D14 D14 DA14 D14 Yes
PD10 D15 D15 DA15 D15 Yes
PD11 A16 A16 CLE Yes
Table 9. FSMC pin definition (continued)
Pins
FSMC
LQFP100
CF NOR/PSRAM/S
RAM NOR/PSRAM Mux NAND 16 bit
DocID15818 Rev 11 57/178
STM32F20xxx Pinouts and pin description
177
PD12 A17 A17 ALE Yes
PD13 A18 A18 Yes
PD14 D0 D0 DA0 D0 Yes
PD15 D1 D1 DA1 D1 Yes
PG2 A12 -
PG3 A13 -
PG4 A14 -
PG5 A15 -
PG6 INT2 -
PG7 INT3 -
PD0 D2 D2 DA2 D2 Yes
PD1 D3 D3 DA3 D3 Yes
PD3 CLK CLK Yes
PD4 NOE NOE NOE NOE Yes
PD5 NWE NWE NWE NWE Yes
PD6 NWAIT NWAIT NWAIT NWAIT Yes
PD7 NE1 NE1 NCE2 Yes
PG9 NE2 NE2 NCE3 -
PG10 NCE4_1 NE3 NE3 -
PG11 NCE4_2 -
PG12 NE4 NE4 -
PG13 A24 A24 -
PG14 A25 A25 -
PB7 NADV NADV Yes
PE0 NBL0 NBL0 Yes
PE1 NBL1 NBL1 Yes
Table 9. FSMC pin definition (continued)
Pins
FSMC
LQFP100
CF NOR/PSRAM/S
RAM NOR/PSRAM Mux NAND 16 bit
Pinouts and pin description STM32F20xxx
58/178 DocID15818 Rev 11
Table 10. Alternate function mapping
Port
AF0 AF1 AF2 AF3 AF4 AF5 AF6 AF7 AF8 AF9 AF10 AF11 AF12 AF13
AF014 AF15
SYS TIM1/2 TIM3/4/5 TIM8/9/10/11 I2C1/I2C2/I2C3 SPI1/SPI2/I2S2 SPI3/I2S3 USART1/2/3 UART4/5/
USART6
CAN1/CAN2/
TIM12/13/14 OTG_FS/ OTG_HS ETH FSMC/SDIO/
OTG_HS DCMI
Port A
PA0-WKUP TIM2_CH1_ETR TIM 5_CH1 TIM8_ETR USART2_CTS UART4_TX ETH_MII_CRS EVENTOUT
PA1 TIM2_CH2 TIM5_CH2 USART2_RTS UART4_RX
ETH_MII
_RX_CLK
ETH_RMII
_REF_CLK
EVENTOUT
PA2 TIM2_CH3 TIM5_CH3 TIM9_CH1 USART2_TX ETH_MDIO EVENTOUT
PA3 TIM2_CH4 TIM5_CH4 TIM9_CH2 USART2_RX OTG_HS_ULPI_D0 ETH _MII_COL EVENTOUT
PA4 SPI1_NSS SPI3_NSS
I2S3_WS USART2_CK OTG_HS_SOF DCMI_HSYNC EVENTOUT
PA5 TIM2_CH1_ETR TIM8_CH1N SPI1_SCK OTG_HS_ULPI_C
K EVENTOUT
PA6 TIM1_BKIN TIM3_CH1 TIM8_BKIN SPI1_MISO TIM13_CH1 DCMI_PIXCK EVENTOUT
PA7 TIM1_CH1N TIM3_CH2 TIM8_CH1N SPI1_MOSI TIM14_CH1
ETH_MII _RX_DV
ETH_RMII
_CRS_DV
EVENTOUT
PA8 MCO1 TIM1_CH1 I2C3_SCL USART1_CK OTG_FS_SOF EVENTOUT
PA9 TIM1_CH2 I2C3_SMBA USART1_TX DCMI_D0 EVENTOUT
PA10 TIM1_CH3 USART1_RX OTG_FS_ID DCMI_D1 EVENTOUT
PA11 TIM1_CH4 USART1_CTS CAN1_RX OTG_FS_DM EVENTOUT
PA12 TIM1_ETR USART1_RTS CAN1_TX OTG_FS_DP EVENTOUT
PA13 JTMSSWDIO
EVENTOUT
PA14 JTCKSWCLK
EVENTOUT
PA15 JTDI TIM 2_CH1
TIM 2_ETR SPI1_NSS SPI3_NSS
I2S3_WS EVENTOUT
STM32F20xxx Pinouts and pin description
DocID15818 Rev 11 59/178
Port B
PB0 TIM1_CH2N TIM3_CH3 TIM8_CH2N OTG_HS_ULPI_D1 ETH _MII_RXD2 EVENTOUT
PB1 TIM1_CH3N TIM3_CH4 TIM8_CH3N OTG_HS_ULPI_D2 ETH _MII_RXD3 EVENTOUT
PB2 EVENTOUT
PB3 JTDO/
TRACESWO TIM2_CH2 SPI1_SCK SPI3_SCK
I2S3_SCK EVENTOUT
PB4 JTRST TIM3_CH1 SPI1_MISO SPI3_MISO EVENTOUT
PB5 TIM3_CH2 I2C1_SMBA SPI1_MOSI SPI3_MOSI
I2S3_SD CAN2_RX OTG_HS_ULPI_D7 ETH _PPS_OUT DCMI_D10 EVENTOUT
PB6 TIM4_CH1 I2C1_SCL USART1_TX CAN2_TX DCMI_D5 EVENTOUT
PB7 TIM4_CH2 I2C1_SDA USART1_RX FSMC_NL DCMI_VSYNC EVENTOUT
PB8 TIM4_CH3 TIM10_CH1 I2C1_SCL CAN1_RX ETH _MII_TXD3 SDIO_D4 DCMI_D6 EVENTOUT
PB9 TIM4_CH4 TIM11_CH1 I2C1_SDA
SPI2_NSS
I2S2_WS
CAN1_TX SDIO_D5 DCMI_D7 EVENTOUT
PB10 TIM2_CH3 I2C2_SCL SPI2_SCK
I2S2_SCK USART3_TX OTG_HS_ULPI_D3 ETH_ MII_RX_ER EVENTOUT
PB11 TIM2_CH4 I2C2_SDA USART3_RX OTG_HS_ULPI_D4
ETH _MII_TX_EN
ETH
_RMII_TX_EN
EVENTOUT
PB12 TIM1_BKIN I2C2_SMBA SPI2_NSS
I2S2_WS USART3_CK CAN2_RX OTG_HS_ULPI_D5 ETH _MII_TXD0
ETH _RMII_TXD0 OTG_HS_ID EVENTOUT
PB13 TIM1_CH1N SPI2_SCK
I2S2_SCK USART3_CTS CAN2_TX OTG_HS_ULPI_D6
ETH _MII_TXD1
ETH _RMII_TXD1
EVENTOUT
PB14 TIM1_CH2N TIM8_CH2N SPI2_MISO USART3_RTS TIM12_CH1 OTG_HS_DM EVENTOUT
PB15 RTC_50Hz TIM1_CH3N TIM8_CH3N SPI2_MOSI
I2S2_SD TIM12_CH2 OTG_HS_DP EVENTOUT
Table 10. Alternate function mapping (continued)
Port
AF0 AF1 AF2 AF3 AF4 AF5 AF6 AF7 AF8 AF9 AF10 AF11 AF12 AF13
AF014 AF15
SYS TIM1/2 TIM3/4/5 TIM8/9/10/11 I2C1/I2C2/I2C3 SPI1/SPI2/I2S2 SPI3/I2S3 USART1/2/3 UART4/5/
USART6
CAN1/CAN2/
TIM12/13/14 OTG_FS/ OTG_HS ETH FSMC/SDIO/
OTG_HS DCMI
Pinouts and pin description STM32F20xxx
60/178 DocID15818 Rev 11
Port C
PC0 OTG_HS_ULPI_
STP EVENTOUT
PC1 ETH_MDC EVENTOUT
PC2 SPI2_MISO OTG_HS_ULPI_
DIR ETH _MII_TXD2 EVENTOUT
PC3 SPI2_MOSI OTG_HS_ULPI_
NXT
ETH
_MII_TX_CLK EVENTOUT
PC4 ETH_MII_RXD0
ETH_RMII_RXD0 EVENTOUT
PC5 ETH _MII_RXD1
ETH _RMII_RXD1 EVENTOUT
PC6 TIM3_CH1 TIM8_CH1 I2S2_MCK USART6_TX SDIO_D6 DCMI_D0 EVENTOUT
PC7 TIM3_CH2 TIM8_CH2 I2S3_MCK USART6_RX SDIO_D7 DCMI_D1 EVENTOUT
PC8 TIM3_CH3 TIM8_CH3 USART6_CK SDIO_D0 DCMI_D2 EVENTOUT
PC9 MCO2 TIM3_CH4 TIM8_CH4 I2C3_SDA I2S2_CKIN I2S3_CKIN SDIO_D1 DCMI_D3 EVENTOUT
PC10 SPI3_SCK
I2S3_SCK USART3_TX UART4_TX SDIO_D2 DCMI_D8 EVENTOUT
PC11 SPI3_MISO USART3_RX UART4_RX SDIO_D3 DCMI_D4 EVENTOUT
PC12 SPI3_MOSI
I2S3_SD USART3_CK UART5_TX SDIO_CK DCMI_D9 EVENTOUT
PC13 EVENTOUT
PC14-
OSC32_IN EVENTOUT
PC15-
OSC32_OU
T
EVENTOUT
Table 10. Alternate function mapping (continued)
Port
AF0 AF1 AF2 AF3 AF4 AF5 AF6 AF7 AF8 AF9 AF10 AF11 AF12 AF13
AF014 AF15
SYS TIM1/2 TIM3/4/5 TIM8/9/10/11 I2C1/I2C2/I2C3 SPI1/SPI2/I2S2 SPI3/I2S3 USART1/2/3 UART4/5/
USART6
CAN1/CAN2/
TIM12/13/14 OTG_FS/ OTG_HS ETH FSMC/SDIO/
OTG_HS DCMI
STM32F20xxx Pinouts and pin description
DocID15818 Rev 11 61/178
Port D
PD0 CAN1_RX FSMC_D2 EVENTOUT
PD1 CAN1_TX FSMC_D3 EVENTOUT
PD2 TIM3_ETR UART5_RX SDIO_CMD DCMI_D11 EVENTOUT
PD3 USART2_CTS FSMC_CLK EVENTOUT
PD4 USART2_RTS FSMC_NOE EVENTOUT
PD5 USART2_TX FSMC_NWE EVENTOUT
PD6 USART2_RX FSMC_NWAIT EVENTOUT
PD7 USART2_CK FSMC_NE1/
FSMC_NCE2 EVENTOUT
PD8 USART3_TX FSMC_D13 EVENTOUT
PD9 USART3_RX FSMC_D14 EVENTOUT
PD10 USART3_CK FSMC_D15 EVENTOUT
PD11 USART3_CTS FSMC_A16 EVENTOUT
PD12 TIM4_CH1 USART3_RTS FSMC_A17 EVENTOUT
PD13 TIM4_CH2 FSMC_A18 EVENTOUT
PD14 TIM4_CH3 FSMC_D0 EVENTOUT
PD15 TIM4_CH4 FSMC_D1 EVENTOUT
Port E
PE0 TIM4_ETR FSMC_NBL0 DCMI_D2 EVENTOUT
PE1 FSMC_NBL1 DCMI_D3 EVENTOUT
PE2 TRACECLK ETH _MII_TXD3 FSMC_A23 EVENTOUT
PE3 TRACED0 FSMC_A19 EVENTOUT
PE4 TRACED1 FSMC_A20 DCMI_D4 EVENTOUT
PE5 TRACED2 TIM9_CH1 FSMC_A21 DCMI_D6 EVENTOUT
PE6 TRACED3 TIM9_CH2 FSMC_A22 DCMI_D7 EVENTOUT
PE7 TIM1_ETR FSMC_D4 EVENTOUT
PE8 TIM1_CH1N FSMC_D5 EVENTOUT
PE9 TIM1_CH1 FSMC_D6 EVENTOUT
PE10 TIM1_CH2N FSMC_D7 EVENTOUT
PE11 TIM1_CH2 FSMC_D8 EVENTOUT
PE12 TIM1_CH3N FSMC_D9 EVENTOUT
PE13 TIM1_CH3 FSMC_D10 EVENTOUT
PE14 TIM1_CH4 FSMC_D11 EVENTOUT
PE15 TIM1_BKIN FSMC_D12 EVENTOUT
Table 10. Alternate function mapping (continued)
Port
AF0 AF1 AF2 AF3 AF4 AF5 AF6 AF7 AF8 AF9 AF10 AF11 AF12 AF13
AF014 AF15
SYS TIM1/2 TIM3/4/5 TIM8/9/10/11 I2C1/I2C2/I2C3 SPI1/SPI2/I2S2 SPI3/I2S3 USART1/2/3 UART4/5/
USART6
CAN1/CAN2/
TIM12/13/14 OTG_FS/ OTG_HS ETH FSMC/SDIO/
OTG_HS DCMI
Pinouts and pin description STM32F20xxx
62/178 DocID15818 Rev 11
Port F
PF0 I2C2_SDA FSMC_A0 EVENTOUT
PF1 I2C2_SCL FSMC_A1 EVENTOUT
PF2 I2C2_SMBA FSMC_A2 EVENTOUT
PF3 FSMC_A3 EVENTOUT
PF4 FSMC_A4 EVENTOUT
PF5 FSMC_A5 EVENTOUT
PF6 TIM10_CH1 FSMC_NIORD EVENTOUT
PF7 TIM11_CH1 FSMC_NREG EVENTOUT
PF8 TIM13_CH1 FSMC_NIOWR EVENTOUT
PF9 TIM14_CH1 FSMC_CD EVENTOUT
PF10 FSMC_INTR EVENTOUT
PF11 DCMI_D12 EVENTOUT
PF12 FSMC_A6 EVENTOUT
PF13 FSMC_A7 EVENTOUT
PF14 FSMC_A8 EVENTOUT
PF15 FSMC_A9 EVENTOUT
Port G
PG0 FSMC_A10 EVENTOUT
PG1 FSMC_A11 EVENTOUT
PG2 FSMC_A12 EVENTOUT
PG3 FSMC_A13 EVENTOUT
PG4 FSMC_A14 EVENTOUT
PG5 FSMC_A15 EVENTOUT
PG6 FSMC_INT2 EVENTOUT
PG7 USART6_CK FSMC_INT3 EVENTOUT
PG8 USART6_RTS ETH _PPS_OUT EVENTOUT
PG9 USART6_RX FSMC_NE2/
FSMC_NCE3 EVENTOUT
PG10
FSMC_NCE4_1/
FSMC_NE3
EVENTOUT
PG11
ETH _MII_TX_EN
ETH
_RMII_TX_EN
FSMC_NCE4_2 EVENTOUT
PG12 USART6_RTS FSMC_NE4 EVENTOUT
PG13 UART6_CTS
ETH _MII_TXD0
ETH _RMII_TXD0
FSMC_A24 EVENTOUT
PG14 USART6_TX ETH _MII_TXD1
ETH _RMII_TXD1 FSMC_A25 EVENTOUT
PG15 USART6_CTS DCMI_D13 EVENTOUT
Table 10. Alternate function mapping (continued)
Port
AF0 AF1 AF2 AF3 AF4 AF5 AF6 AF7 AF8 AF9 AF10 AF11 AF12 AF13
AF014 AF15
SYS TIM1/2 TIM3/4/5 TIM8/9/10/11 I2C1/I2C2/I2C3 SPI1/SPI2/I2S2 SPI3/I2S3 USART1/2/3 UART4/5/
USART6
CAN1/CAN2/
TIM12/13/14 OTG_FS/ OTG_HS ETH FSMC/SDIO/
OTG_HS DCMI
STM32F20xxx Pinouts and pin description
DocID15818 Rev 11 63/178
Port H
PH0 -
OSC_IN EVENTOUT
PH1 -
OSC_OUT EVENTOUT
PH2 ETH _MII_CRS EVENTOUT
PH3 ETH _MII_COL EVENTOUT
PH4 I2C2_SCL OTG_HS_ULPI_N
XT EVENTOUT
PH5 I2C2_SDA EVENTOUT
PH6 I2C2_SMBA TIM12_CH1 ETH _MII_RXD2 EVENTOUT
PH7 I2C3_SCL ETH _MII_RXD3 EVENTOUT
PH8 I2C3_SDA DCMI_HSYNC EVENTOUT
PH9 I2C3_SMBA TIM12_CH2 DCMI_D0 EVENTOUT
PH10 TIM5_CH1 DCMI_D1 EVENTOUT
PH11 TIM5_CH2 DCMI_D2 EVENTOUT
PH12 TIM5_CH3 DCMI_D3 EVENTOUT
PH13 TIM8_CH1N CAN1_TX EVENTOUT
PH14 TIM8_CH2N DCMI_D4 EVENTOUT
PH15 TIM8_CH3N DCMI_D11 EVENTOUT
Port I
PI0 TIM5_CH4 SPI2_NSS
I2S2_WS DCMI_D13 EVENTOUT
PI1 SPI2_SCK
I2S2_SCK DCMI_D8 EVENTOUT
PI2 TIM8_CH4 SPI2_MISO DCMI_D9 EVENTOUT
PI3 TIM8_ETR SPI2_MOSI
I2S2_SD DCMI_D10 EVENTOUT
PI4 TIM8_BKIN DCMI_D5 EVENTOUT
PI5 TIM8_CH1 DCMI_VSYNC EVENTOUT
PI6 TIM8_CH2 DCMI_D6 EVENTOUT
PI7 TIM8_CH3 DCMI_D7 EVENTOUT
PI8 EVENTOUT
PI9 CAN1_RX EVENTOUT
PI10 ETH _MII_RX_ER EVENTOUT
PI11 OTG_HS_ULPI_
DIR EVENTOUT
Table 10. Alternate function mapping (continued)
Port
AF0 AF1 AF2 AF3 AF4 AF5 AF6 AF7 AF8 AF9 AF10 AF11 AF12 AF13
AF014 AF15
SYS TIM1/2 TIM3/4/5 TIM8/9/10/11 I2C1/I2C2/I2C3 SPI1/SPI2/I2S2 SPI3/I2S3 USART1/2/3 UART4/5/
USART6
CAN1/CAN2/
TIM12/13/14 OTG_FS/ OTG_HS ETH FSMC/SDIO/
OTG_HS DCMI
Memory mapping STM32F20xxx
64/178 DocID15818 Rev 11
5 Memory mapping
The memory map is shown in Figure 16.
DocID15818 Rev 11 65/178
STM32F20xxx Memory mapping
177
Figure 16. Memory map
512-Mbyte
block 7
Cortex-M3's
internal
peripherals
512-Mbyte
block 6
Not used
512-Mbyte
block 5
FSMC registers
512-Mbyte
block 4
FSMC bank 3
& bank4
512-Mbyte
block 3
FSMC bank1
& bank2
512-Mbyte
block 2
Peripherals
512-Mbyte
block 1
SRAM
0x0000 0000
0x1FFF FFFF
0x2000 0000
0x3FFF FFFF
0x4000 0000
0x5FFF FFFF
0x6000 0000
0x7FFF FFFF
0x8000 0000
0x9FFF FFFF
0xA000 0000
0xBFFF FFFF
0xC000 0000
0xDFFF FFFF
0xE000 0000
0xFFFF FFFF
512-Mbyte
block 0
Code
Flash
0x0810 0000 - 0x0FFF FFFF
0x1FFF 0000 - 0x1FFF 7A0F
0x1FFF C000 - 0x1FFF C007
0x0800 0000 - 0x080F FFFF
0x0001 C000 - 0x07FF FFFF
0x0000 0000 - 0x000F FFFF
System memory + OTP
Reserved
Reserved
Aliased to Flash, system
memory or SRAM depending
on the BOOT pins
SRAM (16 KB aliased
by bit-banding)
Reserved
0x2000 0000 - 0x2001 BFFF
0x2001 C000 - 0x2001 FFFF
0x2002 0000 - 0x3FFF FFFF
TIM2
TIM3
0x4000 0000 - 0x4000 03FF
TIM4
TIM5
TIM6
TIM7
Reserved
0x4000 0400 - 0x4000 07FF
0x4000 0800 - 0x4000 0BFF
0x4000 0C00 - 0x4000 0FFF
0x4000 1000 - 0x4000 13FF
0x4000 2000 - 0x4000 23FF
0x4000 2400 - 0x4000 27FF
RTC & BKP registers 0x4000 2800 - 0x4000 2BFF
WWDG 0x4000 2C00 - 0x4000 2FFF
IWDG 0x4000 3000 - 0x4000 33FF
Reserved 0x4000 3400 - 0x4000 37FF
SPI2/I2S2 0x4000 3800 - 0x4000 3BFF
SPI3/I2S3 0x4000 3C00 - 0x4000 3FFF
Reserved
0x4000 4000 - 0x4000 43FF
USART2 0x4000 4400 - 0x4000 47FF
USART3 0x4000 4800 - 0x4000 4BFF
UART4 0x4000 4C00 - 0x4000 4FFF
UART5 0x4000 5000 - 0x4000 53FF
I2C1 0x4000 5400 - 0x4000 57FF
I2C2 0x4000 5800 - 0x4000 5BFF
Reserved
0x4000 6C00 - 0x4000 6FFF
PWR 0x4000 7000 - 0x4000 73FF
DAC1/DAC2 0x4000 7400 - 0x4000 77FF
0x4000 7800 - 0x4000 FFFF
TIM1 / PWM1 0x4001 0000 - 0x4001 03FF
TIM8 / PWM2 0x4001 0400 - 0x4001 07FF
Port A
USART1 0x4001 1000 - 0x4001 13FF
0x4001 1400 - 0x4001 17FF
Port B
0x4001 1800 - 0x4001 1FFF
Port C
0x4001 2000 - 0x4001 23FF
Port D
0x4001 2400 - 0x4001 27FF
Port E
0x4001 2800 - 0x4001 2BFF
Port F
0x4001 2C00 - 0x4001 2FFF
Port G
0x4001 3000 - 0x4001 33FF
Reserved 0x4001 3400 - 0x4001 37FF
0x4001 3800 - 0x4001 3BFF
0x4001 4000 - 0x4001 43FF
0x4001 4400 - 0x4001 47FF
USART6
0x4001 4800 - 0x4001 4BFF
0x4002 0000 - 0x4002 03FF
0x4002 0C00 - 0x4002 0FFF
0x4002 1000 - 0x4002 13FF
0x4002 1400 - 0x4002 17FF
Reset clock controller (RCC)
0x4002 1800 - 0x4002 1BFF
Port H 0x4002 1C00 - 0x4002 1FFF
Flash interface
0x4002 2000 - 0x4002 23FF
Reserved 0x4002 2400 - 0x4002 2FFF
CRC 0x4002 3000 - 0x4002 33FF
FSMC bank1 NOR/PSRAM 1 0x6000 0000 - 0x63FF FFFF
FSMC bank1 NOR/PSRAM 2 0x6400 0000 - 0x67FF FFFF
FSMC bank1 NOR/PSRAM 3 0x6800 0000 - 0x6BFF FFFF
FSMC bank1 NOR/PSRAM 4 0x6C00 0000 - 0x6FFF FFFF
FSMC bank2 NAND (NAND1) 0x7000 0000 - 0x7FFF FFFF
FSMC bank3 NAND (NAND2) 0x8000 0000 - 0x8FFF FFFF
FSMC bank4 PC Card 0x9000 0000 - 0x9FFF FFFF
FSMC control register 0xA000 0000 - 0xA000 0FFF
0xA000 1000 - 0xBFFF FFFF
ai17615c
Option Bytes
TIM10
SYSCFG
0x4002 0400 - 0x4002 07FF
0x4002 0800 - 0x4002 0BFF
SDIO
Reserved
Reserved 0x4001 4C00 - 0x4001 FFFF
EXTI 0x4001 3C00 - 0x4001 3FFF
Reserved
BxCAN2
0x4000 6000 - 0x4000 63FF
0x4000 6400 - 0x4000 67FF
0x4000 6800 - 0x4000 6BFF
Reserved 0x5006 1000 - 0x5FFF FFFF
DCMI 0x5005 0000 - 0x5005 03FF
Reserved 0x5004 0000 - 0x5004 0FFF
USB OTG FS 0x5000 0000 - 0x5003 FFFF
Reserved 0x4002 9400 - 0x4FFF FFFF
USB OTG HS 0x4004 0000 - 0x4007 FFFF
Reserved 0x4002 9400 - 0x4003 FFFF
ETHERNET 0x4002 8000 - 0x4002 93FF
Reserved 0x4002 6800 - 0x4002 7FFF
0x4002 6400 - 0x4002 67FF
0x4002 6000 - 0x4002 63FF
DMA2
DMA1
Reserved 0x4002 5000 - 0x4002 5FFF
BKPSRAM 0x4002 4000 - 0x4002 4FFF
0x4002 3C00 - 0x4002 3FFF
0x4002 3800 - 0x4002 3BFF
Reserved 0x4002 3400 - 0x4002 37FF
Port I
TIM11
TIM9
SPI1
ADC1 - ADC2 - ADC3
Reserved
BxCAN1
I2C3 0x4000 5C00 - 0x4000 5FFF
Reserved
TIM12
TIM13
TIM14
0x4000 1C00 - 0x4000 1FFF
0x4000 1800 - 0x4000 1BFF
0x4000 1400 - 0x4000 17FF
SRAM (112 KB aliased
by bit-banding)
Reserved 0x1FFF C008 - 0x1FFF FFFF
Reserved 0x1FFF 7A10 - 0x1FFF 7FFF
Reserved
RNG 0x5006 0800 - 0x5006 0FFF
Reserved 0x5005 0400 - 0x5006 7FFF
0x4001 0800 - 0x4001 0FFF
Reserved
Reserved
Electrical characteristics STM32F20xxx
66/178 DocID15818 Rev 11
6 Electrical characteristics
6.1 Parameter conditions
Unless otherwise specified, all voltages are referenced to VSS.
6.1.1 Minimum and maximum values
Unless otherwise specified the minimum and maximum values are guaranteed in the worst
conditions of ambient temperature, supply voltage and frequencies by tests in production on
100% of the devices with an ambient temperature at TA = 25 °C and TA = TAmax (given by
the selected temperature range).
Data based on characterization results, design simulation and/or technology characteristics
are indicated in the table footnotes and are not tested in production. Based on
characterization, the minimum and maximum values refer to sample tests and represent the
mean value plus or minus three times the standard deviation (mean±3Σ).
6.1.2 Typical values
Unless otherwise specified, typical data are based on TA = 25 °C, VDD = 3.3 V (for the
1.8 V ≤ VDD ≤ 3.6 V voltage range). They are given only as design guidelines and are not
tested.
Typical ADC accuracy values are determined by characterization of a batch of samples from
a standard diffusion lot over the full temperature range, where 95% of the devices have an
error less than or equal to the value indicated (mean±2Σ).
6.1.3 Typical curves
Unless otherwise specified, all typical curves are given only as design guidelines and are
not tested.
6.1.4 Loading capacitor
The loading conditions used for pin parameter measurement are shown in Figure 17.
6.1.5 Pin input voltage
The input voltage measurement on a pin of the device is described in Figure 18.
Figure 17. Pin loading conditions Figure 18. Pin input voltage
MS19011V2
C = 50 pF
MCU pin
MS19010V2
MCU pin
VIN
DocID15818 Rev 11 67/178
STM32F20xxx Electrical characteristics
177
6.1.6 Power supply scheme
Figure 19. Power supply scheme
1. Each power supply pair must be decoupled with filtering ceramic capacitors as shown above. These capacitors must be
placed as close as possible to, or below, the appropriate pins on the underside of the PCB to ensure the good functionality
of the device.
2. To connect REGOFF and IRROFF pins, refer to Section 3.16: Voltage regulator.
3. The two 2.2 μF ceramic capacitors should be replaced by two 100 nF decoupling capacitors when the voltage regulator is
OFF.
4. The 4.7 μF ceramic capacitor must be connected to one of the VDD pin.
ai17527e
VDD
1/2/...14/15
VBAT
GP I/Os
OUT
IN Kernel logic
(CPU,
digital
& RAM)
Backup circuitry
(OSC32K,RTC,
Backup registers,
backup RAM)
Wakeup logic
15 × 100 nF
+ 1 × 4.7 μF
1.8-3.6 V
VSS
1/2/...14/15
VDDA
VREF+
VREFVSSA
ADC
Level shifter
IO
Logic
VDD
100 nF
+ 1 μF
VREF
100 nF
+ 1 μF
VDD
Flash memory
VVCAP_1 2 × 2.2 μF CAP_2
REGOFF
IRROFF
Power switch
Analog
RCs, PLL,
...
Voltage
regulator
Electrical characteristics STM32F20xxx
68/178 DocID15818 Rev 11
6.1.7 Current consumption measurement
Figure 20. Current consumption measurement scheme
6.2 Absolute maximum ratings
Stresses above the absolute maximum ratings listed in Table 11: Voltage characteristics,
Table 12: Current characteristics, and Table 13: Thermal characteristics may cause
permanent damage to the device. These are stress ratings only and functional operation of
the device at these conditions is not implied. Exposure to maximum rating conditions for
extended periods may affect device reliability.
ai14126
VBAT
VDD
VDDA
IDD_VBAT
IDD
Table 11. Voltage characteristics
Symbol Ratings Min Max Unit
VDD–VSS External main supply voltage (including VDDA, VDD)(1)
1. All main power (VDD, VDDA) and ground (VSS, VSSA) pins must always be connected to the external power
supply, in the permitted range.
–0.3 4.0
V
VIN
Input voltage on five-volt tolerant pin(2)
2. VIN maximum value must always be respected. Refer to Table 12 for the values of the maximum allowed
injected current.
VSS–0.3 VDD+4
Input voltage on any other pin VSS–0.3 4.0
|ΔVDDx| Variations between different VDD power pins - 50
mV
|VSSX − VSS| Variations between all the different ground pins - 50
VESD(HBM) Electrostatic discharge voltage (human body model)
see Section 6.3.14:
Absolute maximum
ratings (electrical
sensitivity)
DocID15818 Rev 11 69/178
STM32F20xxx Electrical characteristics
177
6.3 Operating conditions
6.3.1 General operating conditions
Table 12. Current characteristics
Symbol Ratings Max. Unit
IVDD Total current into VDD power lines (source)(1)
1. All main power (VDD, VDDA) and ground (VSS, VSSA) pins must always be connected to the external power
supply, in the permitted range.
120
mA
IVSS Total current out of VSS ground lines (sink)(1) 120
IIO
Output current sunk by any I/O and control pin 25
Output current source by any I/Os and control pin 25
IINJ(PIN)
(2)
2. Negative injection disturbs the analog performance of the device. See note in Section 6.3.20: 12-bit ADC
characteristics.
Injected current on five-volt tolerant I/O(3)
3. Positive injection is not possible on these I/Os. A negative injection is induced by VINVDD while a negative injection is induced by VIN 25 MHz.
4. When the ADC is on (ADON bit set in the ADC_CR2 register), add an additional power consumption of 1.6 mA per ADC for
the analog part.
5. In this case HCLK = system clock/2.
DocID15818 Rev 11 77/178
STM32F20xxx Electrical characteristics
177
Table 21. Typical and maximum current consumption in Run mode, code with data processing
running from Flash memory (ART accelerator disabled)
Symbol Parameter Conditions fHCLK
Typ Max(1)
Unit
TA = 25 °C TA = 85 °C TA = 105 °C
IDD
Supply current
in Run mode
External clock(2), all
peripherals enabled(3)
120 MHz 61 81 93
mA
90 MHz 48 68 80
60 MHz 33 53 65
30 MHz 18 38 50
25 MHz 14 34 46
16 MHz(4) 10 30 42
8 MHz 6 26 38
4 MHz 4 24 36
2 MHz 3 23 35
External clock(2), all
peripherals disabled
120 MHz 33 54 66
90 MHz 27 47 59
60 MHz 19 39 51
30 MHz 11 31 43
25 MHz 8 28 41
16 MHz(4) 6 26 38
8 MHz 4 24 36
4 MHz 3 23 35
2 MHz 2 23 34
1. Based on characterization, tested in production at VDD max and fHCLK max with peripherals enabled.
2. External clock is 4 MHz and PLL is on when fHCLK > 25 MHz.
3. When the ADC is on (ADON bit set in the ADC_CR2 register), add an additional power consumption of 1.6 mA per ADC for
the analog part.
4. In this case HCLK = system clock/2.
Electrical characteristics STM32F20xxx
78/178 DocID15818 Rev 11
Figure 23. Typical current consumption vs temperature, Run mode, code with data
processing running from RAM, and peripherals ON
Figure 24. Typical current consumption vs temperature, Run mode, code with data
processing running from RAM, and peripherals OFF
MS19014V1
0
10
20
30
40
50
60
0 20 40 60 80 100 120
CPU frequnecy (MHz)
105°C
85°C
70°C
55°C
30°C
0°C
-45°C
IDD(RUN) (mA)
MS19015V1
0
5
10
15
20
25
30
0 20 40 60 80 100 120
CPU Frequency (MHz)
105°C
85°C
70°C
55°C
30°C
0°C
-45°C
IDD(RUN) (mA)
DocID15818 Rev 11 79/178
STM32F20xxx Electrical characteristics
177
Figure 25. Typical current consumption vs temperature, Run mode, code with data
processing running from Flash, ART accelerator OFF, peripherals ON
Figure 26. Typical current consumption vs temperature, Run mode, code with data
processing running from Flash, ART accelerator OFF, peripherals OFF
MS19016V1
0.0
10.0
20.0
30.0
40.0
50.0
60.0
70.0
80.0
0 20 40 60 80 100 120
105
85
30°C
-45°C
IDD(RUN) (mA)
CPU frequnecy (MHz)
MS19017V1
0.0
5.0
10.0
15.0
20.0
25.0
30.0
35.0
40.0
45.0
0.0 20.0 40.0 60.0 80.0 100.0 120.0
CPU Frequency (MHz)
105
85
30°C
-45°C
I
DD(RUN) (mA)
Electrical characteristics STM32F20xxx
80/178 DocID15818 Rev 11
Table 22. Typical and maximum current consumption in Sleep mode
Symbol Parameter Conditions fHCLK
Typ Max(1)
T Unit A =
25 °C
TA =
85 °C
TA =
105 °C
IDD
Supply current in
Sleep mode
External clock(2),
all peripherals enabled(3)
120 MHz 38 51 61
mA
90 MHz 30 43 53
60 MHz 20 33 43
30 MHz 11 25 35
25 MHz 8 21 31
16 MHz 6 19 29
8 MHz 3.6 17.0 27.0
4 MHz 2.4 15.4 25.3
2 MHz 1.9 14.9 24.7
External clock(2), all
peripherals disabled
120 MHz 8 21 31
90 MHz 7 20 30
60 MHz 5 18 28
30 MHz 3.5 16.0 26.0
25 MHz 2.5 16.0 25.0
16 MHz 2.1 15.1 25.0
8 MHz 1.7 15.0 25.0
4 MHz 1.5 14.6 24.6
2 MHz 1.4 14.2 24.3
1. Based on characterization, tested in production at VDD max and fHCLK max with peripherals enabled.
2. External clock is 4 MHz and PLL is on when fHCLK > 25 MHz.
3. Add an additional power consumption of 1.6 mA per ADC for the analog part. In applications, this consumption occurs only
while the ADC is on (ADON bit is set in the ADC_CR2 register).
DocID15818 Rev 11 81/178
STM32F20xxx Electrical characteristics
177
Figure 27. Typical current consumption vs temperature in Sleep mode,
peripherals ON
Figure 28. Typical current consumption vs temperature in Sleep mode,
peripherals OFF
MS19018V1
0
5
10
15
20
25
30
35
40
45
50
0 20 40 60 80 100 120
105°C
85°C
70°C
55°C
30°C
0°C
-45°C
IDD(SLEEP) (mA)
CPU Frequency (MHz)
MS19019V1
0
2
4
6
8
10
12
14
16
0 20 40 60 80 100 120
105°C
85°C
70°C
55°C
30°C
0°C
-45°C
CPU Frequency (MHz)
IDD(SLEEP) (mA)
Electrical characteristics STM32F20xxx
82/178 DocID15818 Rev 11
Figure 29. Typical current consumption vs temperature in Stop mode
1. All typical and maximum values from table 18 and figure 26 will be reduced over time by up to 50% as part
of ST continuous improvement of test procedures. New versions of the datasheet will be released to reflect
these changes
Table 23. Typical and maximum current consumptions in Stop mode(1)
Symbol Parameter Conditions
Typ Max
T Unit A =
25 °C
TA =
25 °C
TA =
85 °C
TA =
105 °C
IDD_STOP
Supply current
in Stop mode
with main
regulator in
Run mode
Flash in Stop mode, low-speed and high-speed
internal RC oscillators and high-speed oscillator
OFF (no independent watchdog)
0.55 1.2 11.00 20.00
mA
Flash in Deep power down mode, low-speed
and high-speed internal RC oscillators and
high-speed oscillator OFF (no independent
watchdog)
0.50 1.2 11.00 20.00
Supply current
in Stop mode
with main
regulator in
Low Power
mode
Flash in Stop mode, low-speed and high-speed
internal RC oscillators and high-speed oscillator
OFF (no independent watchdog)
0.35 1.1 8.00 15.00
Flash in Deep power down mode, low-speed
and high-speed internal RC oscillators and
high-speed oscillator OFF (no independent
watchdog)
0.30 1.1 8.00 15.00
1. All typical and maximum values will be further reduced by up to 50% as part of ST continuous improvement of test
procedures. New versions of the datasheet will be released to reflect these changes.
MS19020V1
0.01
0.1
1
10
-45 -35 -25 -15 -5 5 15 25 35 45 55 65 75 85 95 105
Temperature (°C)
Idd_stop_mr_flhstop
Idd_stop_mr_flhdeep
Idd_stop_lp_flhstop
Idd_stop_lp_flhdeep
IDD(STOP) (mA)
DocID15818 Rev 11 83/178
STM32F20xxx Electrical characteristics
177
Table 24. Typical and maximum current consumptions in Standby mode
Symbol Parameter Conditions
Typ Max(1)
TA = 25 °C TA = 85 °C TA = 105 °C Unit
VDD =
1.8 V
VDD=
2.4 V
VDD =
3.3 V VDD = 3.6 V
IDD_STBY
Supply current
in Standby
mode
Backup SRAM ON, low-speed
oscillator and RTC ON 3.0 3.4 4.0 15.1 25.8
μA
Backup SRAM OFF, lowspeed
oscillator and RTC ON 2.4 2.7 3.3 12.4 20.5
Backup SRAM ON, RTC OFF 2.4 2.6 3.0 12.5 24.8
Backup SRAM OFF, RTC
OFF 1.7 1.9 2.2 9.8 19.2
1. Based on characterization, not tested in production.
Table 25. Typical and maximum current consumptions in VBAT mode
Symbol Parameter Conditions
Typ Max(1)
TA = 25 °C TA = 85 °C Unit TA =
105 °C
VDD =
1.8 V
VDD=
2.4 V
VDD =
3.3 V VDD = 3.6 V
IDD_VBAT
Backup
domain supply
current
Backup SRAM ON, low-speed
oscillator and RTC ON 1.29 1.42 1.68 12 19
μA
Backup SRAM OFF, low-speed
oscillator and RTC ON 0.62 0.73 0.96 8 10
Backup SRAM ON, RTC OFF 0.79 0.81 0.86 9 16
Backup SRAM OFF, RTC OFF 0.10 0.10 0.10 5 7
1. Based on characterization, not tested in production.
Electrical characteristics STM32F20xxx
84/178 DocID15818 Rev 11
On-chip peripheral current consumption
The current consumption of the on-chip peripherals is given in Table 26. The MCU is placed
under the following conditions:
• At startup, all I/O pins are configured as analog inputs by firmware.
• All peripherals are disabled unless otherwise mentioned
• The given value is calculated by measuring the current consumption
– with all peripherals clocked off
– with one peripheral clocked on (with only the clock applied)
• The code is running from Flash memory and the Flash memory access time is equal to
3 wait states at 120 MHz
• Prefetch and Cache ON
• When the peripherals are enabled, HCLK = 120MHz, fPCLK1 = fHCLK/4, and
fPCLK2 = fHCLK/2
• The typical values are obtained for VDD = 3.3 V and TA= 25 °C, unless otherwise
specified.
Table 26. Peripheral current consumption
Peripheral(1) Typical consumption at 25 °C Unit
AHB1
GPIO A 0.45
mA
GPIO B 0.43
GPIO C 0.46
GPIO D 0.44
GPIO E 0.44
GPIO F 0.42
GPIO G 0.44
GPIO H 0.42
GPIO I 0.43
OTG_HS + ULPI 3.64
CRC 1.17
BKPSRAM 0.21
DMA1 2.76
DMA2 2.85
ETH_MAC +
ETH_MAC_TX
ETH_MAC_RX
ETH_MAC_PTP
2.99
AHB2
OTG_FS 3.16
DCMI 0.60
AHB3 FSMC 1.74
DocID15818 Rev 11 85/178
STM32F20xxx Electrical characteristics
177
APB1
TIM2 0.61
mA
TIM3 0.49
TIM4 0.54
TIM5 0.62
TIM6 0.20
TIM7 0.20
TIM12 0.36
TIM13 0.28
TIM14 0.25
USART2 0.25
USART3 0.25
UART4 0.25
UART5 0.26
I2C1 0.25
I2C2 0.25
I2C3 0.25
SPI2 0.20/0.10
SPI3 0.18/0.09
CAN1 0.31
CAN2 0.30
DAC channel 1(2) 1.11
DAC channel 1(3) 1.11
PWR 0.15
WWDG 0.15
Table 26. Peripheral current consumption (continued)
Peripheral(1) Typical consumption at 25 °C Unit
Electrical characteristics STM32F20xxx
86/178 DocID15818 Rev 11
6.3.7 Wakeup time from low-power mode
The wakeup times given in Table 27 is measured on a wakeup phase with a 16 MHz HSI
RC oscillator. The clock source used to wake up the device depends from the current
operating mode:
• Stop or Standby mode: the clock source is the RC oscillator
• Sleep mode: the clock source is the clock that was set before entering Sleep mode.
All timings are derived from tests performed under ambient temperature and VDD supply
voltage conditions summarized in Table 14.
APB2
SDIO 0.69
mA
TIM1 1.06
TIM8 1.03
TIM9 0.58
TIM10 0.37
TIM11 0.39
ADC1(4) 2.13
ADC2(4) 2.04
ADC3(4) 2.12
SPI1 1.20
USART1 0.38
USART6 0.37
1. External clock is 25 MHz (HSE oscillator with 25 MHz crystal) and PLL is on.
2. EN1 bit is set in DAC_CR register.
3. EN2 bit is set in DAC_CR register.
4. fADC = fPCLK2/2, ADON bit set in ADC_CR2 register.
Table 26. Peripheral current consumption (continued)
Peripheral(1) Typical consumption at 25 °C Unit
Table 27. Low-power mode wakeup timings
Symbol Parameter Min(1) Typ(1) Max(1) Unit
tWUSLEEP
(2) Wakeup from Sleep mode - 1 - μs
tWUSTOP
(2)
Wakeup from Stop mode (regulator in Run mode) - 13 -
Wakeup from Stop mode (regulator in low power mode) - 17 40 μs
Wakeup from Stop mode (regulator in low power mode
and Flash memory in Deep power down mode) - 110 -
tWUSTDBY
(2)(3) Wakeup from Standby mode 260 375 480 μs
1. Based on characterization, not tested in production.
2. The wakeup times are measured from the wakeup event to the point in which the application code reads the first instruction.
3. tWUSTDBY minimum and maximum values are given at 105 °C and –45 °C, respectively.
DocID15818 Rev 11 87/178
STM32F20xxx Electrical characteristics
177
6.3.8 External clock source characteristics
High-speed external user clock generated from an external source
The characteristics given in Table 28 result from tests performed using an high-speed
external clock source, and under ambient temperature and supply voltage conditions
summarized in Table 14.
Low-speed external user clock generated from an external source
The characteristics given in Table 29 result from tests performed using an low-speed
external clock source, and under ambient temperature and supply voltage conditions
summarized in Table 14.
Table 28. High-speed external user clock characteristics
Symbol Parameter Conditions Min Typ Max Unit
fHSE_ext
External user clock source
frequency(1) 1 - 26 MHz
VHSEH OSC_IN input pin high level voltage 0.7VDD - VDD V
VHSEL OSC_IN input pin low level voltage VSS - 0.3VDD
tw(HSE)
tw(HSE)
OSC_IN high or low time(1)
1. Guaranteed by design, not tested in production.
5 - -
ns
tr(HSE)
tf(HSE)
OSC_IN rise or fall time(1) - - 20
Cin(HSE) OSC_IN input capacitance(1) - 5 - pF
DuCy(HSE) Duty cycle 45 - 55 %
IL OSC_IN Input leakage current VSS ≤ VIN ≤ VDD - - ±1 μA
Table 29. Low-speed external user clock characteristics
Symbol Parameter Conditions Min Typ Max Unit
fLSE_ext
User External clock source
frequency(1)
1. Guaranteed by design, not tested in production.
- 32.768 1000 kHz
VLSEH
OSC32_IN input pin high level
voltage 0.7VDD - VDD
V
VLSEL
OSC32_IN input pin low level
voltage VSS - 0.3VDD
tw(LSE)
tf(LSE)
OSC32_IN high or low time(1) 450 - -
ns
tr(LSE)
tf(LSE)
OSC32_IN rise or fall time(1) - - 50
Cin(LSE) OSC32_IN input capacitance(1) - 5 - pF
DuCy(LSE) Duty cycle 30 - 70 %
IL OSC32_IN Input leakage current VSS ≤ VIN ≤ VDD - - ±1 μA
Electrical characteristics STM32F20xxx
88/178 DocID15818 Rev 11
Figure 30. High-speed external clock source AC timing diagram
Figure 31. Low-speed external clock source AC timing diagram
High-speed external clock generated from a crystal/ceramic resonator
The high-speed external (HSE) clock can be supplied with a 4 to 26 MHz crystal/ceramic
resonator oscillator. All the information given in this paragraph are based on
characterization results obtained with typical external components specified in Table 30. In
the application, the resonator and the load capacitors have to be placed as close as
possible to the oscillator pins in order to minimize output distortion and startup stabilization
time. Refer to the crystal resonator manufacturer for more details on the resonator
characteristics (frequency, package, accuracy).
ai17528
OSC_IN
External
STM32F
clock source
VHSEH
tf(HSE) tW(HSE)
IL
90%
10%
THSE
tr(HSE) tW(HSE) t
fHSE_ext
VHSEL
ai17529
External OSC32_IN
STM32F
clock source
VLSEH
tf(LSE) tW(LSE)
IL
90%
10%
TLSE
tr(LSE) tW(LSE) t
fLSE_ext
VLSEL
DocID15818 Rev 11 89/178
STM32F20xxx Electrical characteristics
177
For CL1 and CL2, it is recommended to use high-quality external ceramic capacitors in the
5 pF to 25 pF range (typ.), designed for high-frequency applications, and selected to match
the requirements of the crystal or resonator (see Figure 32). CL1 and CL2 are usually the
same size. The crystal manufacturer typically specifies a load capacitance which is the
series combination of CL1 and CL2. PCB and MCU pin capacitance must be included (10 pF
can be used as a rough estimate of the combined pin and board capacitance) when sizing
CL1 and CL2.
Note: For information on electing the crystal, refer to the application note AN2867 “Oscillator
design guide for ST microcontrollers” available from the ST website www.st.com.
Figure 32. Typical application with an 8 MHz crystal
1. REXT value depends on the crystal characteristics.
Low-speed external clock generated from a crystal/ceramic resonator
The low-speed external (LSE) clock can be supplied with a 32.768 kHz crystal/ceramic
resonator oscillator. All the information given in this paragraph are based on
characterization results obtained with typical external components specified in Table 31. In
the application, the resonator and the load capacitors have to be placed as close as
possible to the oscillator pins in order to minimize output distortion and startup stabilization
time. Refer to the crystal resonator manufacturer for more details on the resonator
characteristics (frequency, package, accuracy).
Table 30. HSE 4-26 MHz oscillator characteristics(1) (2)
1. Resonator characteristics given by the crystal/ceramic resonator manufacturer.
2. Based on characterization, not tested in production.
Symbol Parameter Conditions Min Typ Max Unit
fOSC_IN Oscillator frequency 4 - 26 MHz
RF Feedback resistor - 200 - kΩ
IDD HSE current consumption
VDD=3.3 V,
ESR= 30 Ω,
CL=5 pF@25 MHz
- 449 -
μA
VDD=3.3 V,
ESR= 30 Ω,
CL=10 pF@25 MHz
- 532 -
gm Oscillator transconductance Startup 5 - - mA/V
tSU(HSE
(3)
3. tSU(HSE) is the startup time measured from the moment it is enabled (by software) to a stabilized 8 MHz
oscillation is reached. This value is measured for a standard crystal resonator and it can vary significantly
with the crystal manufacturer
Startup time VDD is stabilized - 2 - ms
ai17530
OSC_OUT
OSC_IN fHSE
CL1
RF
STM32F
8 MHz
resonator
Resonator with
integrated capacitors
Bias
controlled
gain
CL2 REXT(1)
Electrical characteristics STM32F20xxx
90/178 DocID15818 Rev 11
Note: For information on electing the crystal, refer to the application note AN2867 “Oscillator
design guide for ST microcontrollers” available from the ST website www.st.com.
Figure 33. Typical application with a 32.768 kHz crystal
6.3.9 Internal clock source characteristics
The parameters given in Table 32 and Table 33 are derived from tests performed under
ambient temperature and VDD supply voltage conditions summarized in Table 14.
High-speed internal (HSI) RC oscillator
Table 31. LSE oscillator characteristics (fLSE = 32.768 kHz) (1)
1. Guaranteed by design, not tested in production.
Symbol Parameter Conditions Min Typ Max Unit
RF Feedback resistor - 18.4 - MΩ
IDD LSE current consumption - - 1 μA
gm Oscillator Transconductance 2.8 - - μA/V
tSU(LSE)
(2)
2. tSU(LSE) is the startup time measured from the moment it is enabled (by software) to a stabilized
32.768 kHz oscillation is reached. This value is measured for a standard crystal resonator and it can vary
significantly with the crystal manufacturer
startup time VDD is stabilized - 2 - s
ai17531
OSC32_OUT
OSC32_IN fLSE
CL1
RF
STM32F
32.768 kHz
resonator
Resonator with
integrated capacitors
Bias
controlled
gain
CL2
Table 32. HSI oscillator characteristics (1)
1. VDD = 3.3 V, TA = –40 to 105 °C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
fHSI Frequency - 16 - MHz
ACCHSI
Accuracy of the HSI
oscillator
User-trimmed with the RCC_CR
register(2) - - 1 %
Factorycalibrated
TA = –40 to 105 °C –8 - 4.5 %
TA = –10 to 85 °C –4 - 4 %
TA = 25 °C –1 - 1 %
tsu(HSI)
(3) HSI oscillator
startup time - 2.2 4 μs
IDD(HSI)
HSI oscillator
power consumption - 60 80 μA
DocID15818 Rev 11 91/178
STM32F20xxx Electrical characteristics
177
Figure 34. ACCHSI versus temperature
Low-speed internal (LSI) RC oscillator
2. Refer to application note AN2868 “STM32F10xxx internal RC oscillator (HSI) calibration” available from the
ST website www.st.com.
3. Guaranteed by design, not tested in production.
Table 33. LSI oscillator characteristics (1)
1. VDD = 3 V, TA = –40 to 105 °C unless otherwise specified.
Symbol Parameter Min Typ Max Unit
fLSI
(2)
2. Based on characterization, not tested in production.
Frequency 17 32 47 kHz
tsu(LSI)
(3)
3. Guaranteed by design, not tested in production.
LSI oscillator startup time - 15 40 μs
IDD(LSI)
(3) LSI oscillator power consumption - 0.4 0.6 μA
MS19012V2
-8
-6
-4
-2
0
2
4
6
-45 -35 -25 -15 -5 5 15 25 35 45 55 65 75 85 95 105 115 125
Normalized deviation (%)
Temperature (°C)
max
avg
min
Electrical characteristics STM32F20xxx
92/178 DocID15818 Rev 11
Figure 35. ACCLSI versus temperature
6.3.10 PLL characteristics
The parameters given in Table 34 and Table 35 are derived from tests performed under
temperature and VDD supply voltage conditions summarized in Table 14.
MS19013V1
-40
-30
-20
-10
0
10
20
30
40
50
-45 -35 -25 -15 -5 5 15 25 35 45 55 65 75 85 95 105
Normalized deviati on (%)
Temperature (°C)
max
avg
min
Table 34. Main PLL characteristics
Symbol Parameter Conditions Min Typ Max Unit
fPLL_IN PLL input clock(1) 0.95
(2) 1 2.10(2) MHz
fPLL_OUT PLL multiplier output clock 24 - 120 MHz
fPLL48_OUT
48 MHz PLL multiplier output
clock - - 48 MHz
fVCO_OUT PLL VCO output 192 - 432 MHz
tLOCK PLL lock time
VCO freq = 192 MHz 75 - 200
μs
VCO freq = 432 MHz 100 - 300
DocID15818 Rev 11 93/178
STM32F20xxx Electrical characteristics
177
Jitter(3)
Cycle-to-cycle jitter
System clock
120 MHz
RMS - 25 -
ps
peak
to
peak
- ±150 -
Period Jitter
RMS - 15 -
peak
to
peak
- ±200 -
Main clock output (MCO) for
RMII Ethernet
Cycle to cycle at 50 MHz
on 1000 samples - 32 -
Main clock output (MCO) for MII
Ethernet
Cycle to cycle at 25 MHz
on 1000 samples - 40 -
Bit Time CAN jitter Cycle to cycle at 1 MHz
on 1000 samples - 330 -
IDD(PLL)
(4) PLL power consumption on VDD
VCO freq = 192 MHz
VCO freq = 432 MHz
0.15
0.45
-
0.40
0.75
mA
IDDA(PLL)
(4) PLL power consumption on
VDDA
VCO freq = 192 MHz
VCO freq = 432 MHz
0.30
0.55
-
0.40
0.85
mA
1. Take care of using the appropriate division factor M to obtain the specified PLL input clock values. The M
factor is shared between PLL and PLLI2S.
2. Guaranteed by design, not tested in production.
3. The use of 2 PLLs in parallel could degraded the Jitter up to +30%.
4. Based on characterization, not tested in production.
Table 34. Main PLL characteristics (continued)
Symbol Parameter Conditions Min Typ Max Unit
Table 35. PLLI2S (audio PLL) characteristics
Symbol Parameter Conditions Min Typ Max Unit
fPLLI2S_IN PLLI2S input clock(1) 0.95(2) 1 2.10(2) MHz
fPLLI2S_OUT PLLI2S multiplier output clock - - 216 MHz
fVCO_OUT PLLI2S VCO output 192 - 432 MHz
tLOCK PLLI2S lock time
VCO freq = 192 MHz 75 - 200
μs
VCO freq = 432 MHz 100 - 300
Electrical characteristics STM32F20xxx
94/178 DocID15818 Rev 11
Jitter(3)
Master I2S clock jitter
Cycle to cycle at
12.288 MHz on
48KHz period,
N=432, R=5
RMS - 90 -
peak
to
peak
- ±280 - ps
Average frequency of
12.288 MHz
N=432, R=5
on 1000 samples
- 90 - ps
WS I2S clock jitter
Cycle to cycle at 48 KHz
on 1000 samples
- 400 - ps
IDD(PLLI2S)
(4) PLLI2S power consumption on
VDD
VCO freq = 192 MHz
VCO freq = 432 MHz
0.15
0.45
-
0.40
0.75
mA
IDDA(PLLI2S)
(4) PLLI2S power consumption on
VDDA
VCO freq = 192 MHz
VCO freq = 432 MHz
0.30
0.55
-
0.40
0.85
mA
1. Take care of using the appropriate division factor M to have the specified PLL input clock values.
2. Guaranteed by design, not tested in production.
3. Value given with main PLL running.
4. Based on characterization, not tested in production.
Table 35. PLLI2S (audio PLL) characteristics (continued)
Symbol Parameter Conditions Min Typ Max Unit
DocID15818 Rev 11 95/178
STM32F20xxx Electrical characteristics
177
6.3.11 PLL spread spectrum clock generation (SSCG) characteristics
The spread spectrum clock generation (SSCG) feature allows to reduce electromagnetic
interferences (see Table 42: EMI characteristics). It is available only on the main PLL.
Equation 1
The frequency modulation period (MODEPER) is given by the equation below:
fPLL_IN and fMod must be expressed in Hz.
As an example:
If fPLL_IN = 1 MHz and fMOD = 1 kHz, the modulation depth (MODEPER) is given by equation
1:
Equation 2
Equation 2 allows to calculate the increment step (INCSTEP):
fVCO_OUT must be expressed in MHz.
With a modulation depth (md) = ±2 % (4 % peak to peak), and PLLN = 240 (in MHz):
An amplitude quantization error may be generated because the linear modulation profile is
obtained by taking the quantized values (rounded to the nearest integer) of MODPER and
INCSTEP. As a result, the achieved modulation depth is quantized. The percentage
quantized modulation depth is given by the following formula:
As a result:
Table 36. SSCG parameters constraint
Symbol Parameter Min Typ Max(1) Unit
fMod Modulation frequency - - 10 KHz
md Peak modulation depth 0.25 - 2 %
MODEPER * INCSTEP - - 215−1 -
1. Guaranteed by design, not tested in production.
MODEPER = round[fPLL_IN ⁄ (4 × fMod)]
MODEPER round 106 4 10 3 = [ ⁄ ( × )] = 250
INCSTEP = round[((215 – 1) × md × PLLN) ⁄ (100 × 5 × MODEPER)]
INCSTEP = round[((215 – 1) × 2 × 240) ⁄ (100 × 5 × 250)] = 126md(quantitazed)%
mdquantized% = (MODEPER × INCSTEP × 100 × 5) ⁄ ((215 – 1) × PLLN)
mdquantized% = (250 × 126 × 100 × 5) ⁄ ((215 – 1) × 240) = 2.0002%(peak)
Electrical characteristics STM32F20xxx
96/178 DocID15818 Rev 11
Figure 36 and Figure 37 show the main PLL output clock waveforms in center spread and
down spread modes, where:
F0 is fPLL_OUT nominal.
Tmode is the modulation period.
md is the modulation depth.
Figure 36. PLL output clock waveforms in center spread mode
Figure 37. PLL output clock waveforms in down spread mode
6.3.12 Memory characteristics
Flash memory
The characteristics are given at TA = –40 to 105 °C unless otherwise specified.
Frequency (PLL_OUT)
Time
F0
tmode 2xtmode
md
ai17291
md
Frequency (PLL_OUT)
Time
F0
tmode 2xtmode
2xmd
ai17292
DocID15818 Rev 11 97/178
STM32F20xxx Electrical characteristics
177
Table 37. Flash memory characteristics
Symbol Parameter Conditions Min Typ Max Unit
IDD Supply current
Write / Erase 8-bit mode
VDD = 1.8 V - 5 -
Write / Erase 16-bit mode mA
VDD = 2.1 V - 8 -
Write / Erase 32-bit mode
VDD = 3.3 V - 12 -
Table 38. Flash memory programming
Symbol Parameter Conditions Min(1) Typ Max(1)
1. Based on characterization, not tested in production.
Unit
tprog Word programming time Program/erase parallelism
(PSIZE) = x 8/16/32 - 16 100(2)
2. The maximum programming time is measured after 100K erase operations.
μs
tERASE16KB Sector (16 KB) erase time
Program/erase parallelism
(PSIZE) = x 8 - 400 800
Program/erase parallelism ms
(PSIZE) = x 16 - 300 600
Program/erase parallelism
(PSIZE) = x 32 - 250 500
tERASE64KB Sector (64 KB) erase time
Program/erase parallelism
(PSIZE) = x 8 - 1200 2400
Program/erase parallelism ms
(PSIZE) = x 16 - 700 1400
Program/erase parallelism
(PSIZE) = x 32 - 550 1100
tERASE128KB Sector (128 KB) erase time
Program/erase parallelism
(PSIZE) = x 8 - 2 4
Program/erase parallelism s
(PSIZE) = x 16 - 1.3 2.6
Program/erase parallelism
(PSIZE) = x 32 - 1 2
tME Mass erase time
Program/erase parallelism
(PSIZE) = x 8 - 16 32
Program/erase parallelism s
(PSIZE) = x 16 - 11 22
Program/erase parallelism
(PSIZE) = x 32 - 8 16
Vprog Programming voltage
32-bit program operation 2.7 - 3.6 V
16-bit program operation 2.1 - 3.6 V
8-bit program operation 1.8 - 3.6 V
Electrical characteristics STM32F20xxx
98/178 DocID15818 Rev 11
Table 40. Flash memory endurance and data retention
6.3.13 EMC characteristics
Susceptibility tests are performed on a sample basis during device characterization.
Functional EMS (electromagnetic susceptibility)
While a simple application is executed on the device (toggling 2 LEDs through I/O ports).
the device is stressed by two electromagnetic events until a failure occurs. The failure is
indicated by the LEDs:
• Electrostatic discharge (ESD) (positive and negative) is applied to all device pins until
a functional disturbance occurs. This test is compliant with the IEC 61000-4-2 standard.
• FTB: A burst of fast transient voltage (positive and negative) is applied to VDD and VSS
through a 100 pF capacitor, until a functional disturbance occurs. This test is compliant
with the IEC 61000-4-4 standard.
A device reset allows normal operations to be resumed.
Table 39. Flash memory programming with VPP
Symbol Parameter Conditions Min(1) Typ Max(1)
1. Guaranteed by design, not tested in production.
Unit
tprog Double word programming
TA = 0 to +40 °C
VDD = 3.3 V
VPP = 8.5 V
- 16 100(2)
2. The maximum programming time is measured after 100K erase operations.
μs
tERASE16KB Sector (16 KB) erase time - 230 -
tERASE64KB Sector (64 KB) erase time - 490 - ms
tERASE128KB Sector (128 KB) erase time - 875 -
tME Mass erase time - 6.9 - s
Vprog Programming voltage 2.7 - 3.6 V
VPP VPP voltage range 7 - 9 V
IPP
Minimum current sunk on
the VPP pin 10 - - mA
tVPP
(3)
3. VPP should only be connected during programming/erasing.
Cumulative time during
which VPP is applied - - 1 hour
Symbol Parameter Conditions
Value
Unit
Min(1)
1. Based on characterization, not tested in production.
NEND Endurance
TA = –40 to +85 °C (6 suffix versions)
TA = –40 to +105 °C (7 suffix versions) 10 kcycles
tRET Data retention
1 kcycle(2) at TA = 85 °C
2. Cycling performed over the whole temperature range.
30
1 kcycle(2) at TA = 105 °C 10 Years
10 kcycles(2) at TA = 55 °C 20
DocID15818 Rev 11 99/178
STM32F20xxx Electrical characteristics
177
The test results are given in Table 41. They are based on the EMS levels and classes
defined in application note AN1709.
Designing hardened software to avoid noise problems
EMC characterization and optimization are performed at component level with a typical
application environment and simplified MCU software. It should be noted that good EMC
performance is highly dependent on the user application and the software in particular.
Therefore it is recommended that the user applies EMC software optimization and
prequalification tests in relation with the EMC level requested for his application.
Software recommendations
The software flowchart must include the management of runaway conditions such as:
• Corrupted program counter
• Unexpected reset
• Critical Data corruption (control registers...)
Prequalification trials
Most of the common failures (unexpected reset and program counter corruption) can be
reproduced by manually forcing a low state on the NRST pin or the Oscillator pins for 1
second.
To complete these trials, ESD stress can be applied directly on the device, over the range of
specification values. When unexpected behavior is detected, the software can be hardened
to prevent unrecoverable errors occurring (see application note AN1015).
Table 41. EMS characteristics
Symbol Parameter Conditions Level/
Class
VFESD
Voltage limits to be applied on any I/O pin to
induce a functional disturbance
VDD = 3.3 V, LQFP176, TA = +25 °C,
fHCLK = 120 MHz, conforms to
IEC 61000-4-2
2B
VEFTB
Fast transient voltage burst limits to be
applied through 100 pF on VDD and VSS
pins to induce a functional disturbance
VDD = 3.3 V, LQFP176, TA =
+25 °C, fHCLK = 120 MHz, conforms
to IEC 61000-4-2
4A
Electrical characteristics STM32F20xxx
100/178 DocID15818 Rev 11
Electromagnetic Interference (EMI)g
The electromagnetic field emitted by the device are monitored while a simple application,
executing EEMBC® code, is running. This emission test is compliant with SAE IEC61967-2
standard which specifies the test board and the pin loading.
6.3.14 Absolute maximum ratings (electrical sensitivity)
Based on three different tests (ESD, LU) using specific measurement methods, the device is
stressed in order to determine its performance in terms of electrical sensitivity.
Electrostatic discharge (ESD)
Electrostatic discharges (a positive then a negative pulse separated by 1 second) are
applied to the pins of each sample according to each pin combination. The sample size
depends on the number of supply pins in the device (3 parts × (n+1) supply pins). This test
conforms to the JESD22-A114/C101 standard.
Table 42. EMI characteristics
Symbol Parameter Conditions Monitored
frequency band
Max vs.
[fHSE/fCPU] Unit
25/120 MHz
SEMI Peak level
VDD = 3.3 V, TA = 25 °C, LQFP176
package, conforming to SAE J1752/3
EEMBC, code running with ART
enabled, peripheral clock disabled
0.1 to 30 MHz
30 to 130 MHz 25 dBμV
130 MHz to 1GHz
SAE EMI Level 4 -
VDD = 3.3 V, TA = 25 °C, LQFP176
package, conforming to SAE J1752/3
EEMBC, code running with ART
enabled, PLL spread spectrum
enabled, peripheral clock disabled
0.1 to 30 MHz 28
30 to 130 MHz 26 dBμV
130 MHz to 1GHz 22
SAE EMI level 4 -
Table 43. ESD absolute maximum ratings
Symbol Ratings Conditions Class Maximum
value(1) Unit
VESD(HBM)
Electrostatic discharge
voltage (human body
model)
TA = +25 °C conforming to JESD22-A114 2 2000(2)
V
VESD(CDM)
Electrostatic discharge
voltage (charge device
model)
TA = +25 °C conforming to JESD22-C101 II 500
1. Based on characterization results, not tested in production.
2. On VBAT pin, VESD(HBM) is limited to 1000 V.
DocID15818 Rev 11 101/178
STM32F20xxx Electrical characteristics
177
Static latch-up
Two complementary static tests are required on six parts to assess the latch-up
performance:
• A supply overvoltage is applied to each power supply pin
• A current injection is applied to each input, output and configurable I/O pin
These tests are compliant with EIA/JESD 78A IC latch-up standard.
6.3.15 I/O current injection characteristics
As a general rule, current injection to the I/O pins, due to external voltage below VSS or
above VDD (for standard, 3 V-capable I/O pins) should be avoided during normal product
operation. However, in order to give an indication of the robustness of the microcontroller in
cases when abnormal injection accidentally happens, susceptibility tests are performed on a
sample basis during device characterization.
Functional susceptibilty to I/O current injection
While a simple application is executed on the device, the device is stressed by injecting
current into the I/O pins programmed in floating input mode. While current is injected into
the I/O pin, one at a time, the device is checked for functional failures.
The failure is indicated by an out of range parameter: ADC error above a certain limit (>5
LSB TUE), out of spec current injection on adjacent pins or other functional failure (for
example reset, oscillator frequency deviation).
The test results are given in Table 45.
Table 44. Electrical sensitivities
Symbol Parameter Conditions Class
LU Static latch-up class TA = +105 °C conforming to JESD78A II level A
Table 45. I/O current injection susceptibility
Symbol Description
Functional susceptibility
Negative Unit
injection
Positive
injection
IINJ
Injected current on all FT pins –5 +0
mA
Injected current on any other pin –5 +5
Electrical characteristics STM32F20xxx
102/178 DocID15818 Rev 11
6.3.16 I/O port characteristics
General input/output characteristics
Unless otherwise specified, the parameters given in Table 50 are derived from tests
performed under the conditions summarized in Table 14: General operating conditions.
All I/Os are CMOS and TTL compliant except for BOOT0 and BOOT1.
Table 46. I/O static characteristics(1)
Symbol Parameter Conditions Min Typ Max Unit
VIL
Low level
input voltage
TTa, FT and
NRST I/Os
1.6 V ≤ VDD ≤ 3.6 V
- - 0.35VDD–0.04(2)
V
BOOT0 - - TBD(2)
I/O input low
level voltage
except BOOT0
- - 0.3VDD
(3)
VIH
High level
input voltage
TTa, FT and
NRST I/Os(4) 0.45VDD+0.3(2) - -
BOOT0 TBD(2) - -
I/O input low
level voltage
except BOOT0
0.7VDD
(3) - -
Vhys
Schmitt
trigger
hysteresis
TTa, FT and
NRST I/Os 10% VDDIO
(2)(5) - -
mV
BOOT0 TBD(2) - -
Ilkg
I/O input leakage current (6) VSS ≤ VIN ≤ VDD - - ±1
μA
I/O FT input leakage current (5) VIN = 5 V - - 3
RPU
Weak pull-up
equivalent
resistor(7)
All pins except
for PA10 and
PB12
VIN = VSS 30 40 50
kΩ
PA10 and PB12 8 11 15
RPD
Weak pulldown
equivalent
resistor
All pins except
for PA10 and
PB12
VIN = VDD 30 40 50
PA10 and PB12 8 11 15
CIO
(2) I/O pin
capacitance 5 pF
1. TBD stands for “to be defined”.
2. Data based on design simulation only. Not tested in production.
3. Tested in production.
4. To sustain a voltage higher than VDD +0.3 V, the internal pull-up/pull-down resistors must be disabled.
5. With a minimum of 200 mV.
6. Leakage could be higher than the maximum value, if negative current is injected on adjacent pins.
7. Pull-up and pull-down resistors are designed with a true resistance in series with a switchable PMOS/NMOS. This
MOS/NMOS contribution to the series resistance is minimum (~10% order).
DocID15818 Rev 11 103/178
STM32F20xxx Electrical characteristics
177
Output driving current
The GPIOs (general purpose input/outputs) can sink or source up to ±8 mA, and sink or
source up to ±20 mA (with a relaxed VOL/VOH) except PC13, PC14 and PC15 which can
sink or source up to ±3mA. When using the PC13 to PC15 GPIOs in output mode, the
speed should not exceed 2 MHz with a maximum load of 30 pF.
In the user application, the number of I/O pins which can drive current must be limited to
respect the absolute maximum rating specified in Section 6.2:
• The sum of the currents sourced by all the I/Os on VDD, plus the maximum Run
consumption of the MCU sourced on VDD, cannot exceed the absolute maximum rating
IVDD (see Table 12).
• The sum of the currents sunk by all the I/Os on VSS plus the maximum Run
consumption of the MCU sunk on VSS cannot exceed the absolute maximum rating
IVSS (see Table 12).
Output voltage levels
Unless otherwise specified, the parameters given in Table 47 are derived from tests
performed under ambient temperature and VDD supply voltage conditions summarized in
Table 14. All I/Os are CMOS and TTL compliant.
Table 47. Output voltage characteristics(1)
1. PC13, PC14, PC15 and PI8 are supplied through the power switch. Since the switch only sinks a limited
amount of current (3 mA), the use of GPIOs PC13 to PC15 and PI8 in output mode is limited: the speed
should not exceed 2 MHz with a maximum load of 30 pF and these I/Os must not be used as a current
source (e.g. to drive an LED).
Symbol Parameter Conditions Min Max Unit
VOL
(2)
2. The IIO current sunk by the device must always respect the absolute maximum rating specified in Table 12
and the sum of IIO (I/O ports and control pins) must not exceed IVSS.
Output low level voltage for an I/O pin
when 8 pins are sunk at same time CMOS ports
IIO = +8 mA
2.7 V < VDD < 3.6 V
- 0.4
V
VOH
(3)
3. The IIO current sourced by the device must always respect the absolute maximum rating specified in
Table 12 and the sum of IIO (I/O ports and control pins) must not exceed IVDD.
Output high level voltage for an I/O pin
when 8 pins are sourced at same time VDD–0.4 -
VOL
(2) Output low level voltage for an I/O pin
when 8 pins are sunk at same time TTL ports
IIO =+ 8mA
2.7 V < VDD < 3.6 V
- 0.4
V
VOH
(3) Output high level voltage for an I/O pin
when 8 pins are sourced at same time 2.4 -
VOL
(2)(4)
4. Based on characterization data, not tested in production.
Output low level voltage for an I/O pin
when 8 pins are sunk at same time IIO = +20 mA
2.7 V < VDD < 3.6 V
- 1.3
V
VOH
(3)(4) Output high level voltage for an I/O pin
when 8 pins are sourced at same time VDD–1.3 -
VOL
(2)(4) Output low level voltage for an I/O pin
when 8 pins are sunk at same time IIO = +6 mA
2 V < VDD < 2.7 V
- 0.4
V
VOH
(3)(4) Output high level voltage for an I/O pin
when 8 pins are sourced at same time VDD–0.4 -
Electrical characteristics STM32F20xxx
104/178 DocID15818 Rev 11
Input/output AC characteristics
The definition and values of input/output AC characteristics are given in Figure 38 and
Table 48, respectively.
Unless otherwise specified, the parameters given in Table 48 are derived from tests
performed under the ambient temperature and VDD supply voltage conditions summarized
in Table 14.
Table 48. I/O AC characteristics(1)
OSPEEDRy
[1:0] bit
value(1)
Symbol Parameter Conditions Min Typ Max Unit
00
fmax(IO)out Maximum frequency(2)
CL = 50 pF, VDD > 2.70 V - - 4
MHz
CL = 50 pF, VDD > 1.8 V - - 2
CL = 10 pF, VDD > 2.70 V - - 8
CL = 10 pF, VDD > 1.8 V - - 4
tf(IO)out/
tr(IO)out
Output high to low level fall
time and output low to high
level rise time
CL = 50 pF, VDD = 1.8 V to
3.6 V - - 100 ns
01
fmax(IO)out Maximum frequency(2)
CL = 50 pF, VDD > 2.70 V - - 25
MHz
CL = 50 pF, VDD > 1.8 V - - 12.5
CL = 10 pF, VDD > 2.70 V - - 50(3)
CL = 10 pF, VDD > 1.8 V - - 20
tf(IO)out/
tr(IO)out
Output high to low level fall
time and output low to high
level rise time
CL = 50 pF, VDD >2.7 V - - 10
ns
CL = 50 pF, VDD > 1.8 V - - 20
CL = 10 pF, VDD > 2.70 V - - 6
CL = 10 pF, VDD > 1.8 V - - 10
10
fmax(IO)out Maximum frequency(2)
CL = 40 pF, VDD > 2.70 V - - 25
MHz
CL = 40 pF, VDD > 1.8 V - - 20
CL = 10 pF, VDD > 2.70 V - - 100(3)
CL = 10 pF, VDD > 1.8 V - - 50(3)
tf(IO)out/
tr(IO)out
Output high to low level fall
time and output low to high
level rise time
CL = 40 pF, VDD > 2.70 V - - 6
ns
CL = 40 pF, VDD > 1.8 V - - 10
CL = 10 pF, VDD > 2.70 V - 4
CL = 10 pF, VDD > 1.8 V - 6
DocID15818 Rev 11 105/178
STM32F20xxx Electrical characteristics
177
Figure 38. I/O AC characteristics definition
11
fmax(IO)out Maximum frequency(2)
CL = 30 pF, VDD > 2.70 V - - 100(3)
MHz
CL = 30 pF, VDD > 1.8 V - - 50(3)
CL = 10 pF, VDD > 2.70 V - - 180(3)
CL = 10 pF, VDD > 1.8 V - - 100(3)
tf(IO)out/
tr(IO)out
Output high to low level fall
time and output low to high
level rise time
CL = 30 pF, VDD > 2.70 V - - 4
ns
CL = 30 pF, VDD > 1.8 V - - 6
CL = 10 pF, VDD > 2.70 V - - 2.5
CL = 10 pF, VDD > 1.8 V - - 4
- tEXTIpw
Pulse width of external
signals detected by the EXTI
controller
10 - - ns
1. The I/O speed is configured using the OSPEEDRy[1:0] bits. Refer to the STM32F20/21xxx reference manual for a
description of the GPIOx_SPEEDR GPIO port output speed register.
2. The maximum frequency is defined in Figure 38.
3. For maximum frequencies above 50 MHz, the compensation cell should be used.
Table 48. I/O AC characteristics(1) (continued)
OSPEEDRy
[1:0] bit
value(1)
Symbol Parameter Conditions Min Typ Max Unit
ai14131c
10%
90%
50%
tr(IO)out
OUTPUT
EXTERNAL
ON 50pF
Maximum frequency is achieved if (tr + tf) ≤ 2/3)T and if the duty cycle is (45-55%)
10%
50%
90%
when loaded by 50pF
T
tf(IO)out
Electrical characteristics STM32F20xxx
106/178 DocID15818 Rev 11
6.3.17 NRST pin characteristics
The NRST pin input driver uses CMOS technology. It is connected to a permanent pull-up
resistor, RPU (see Table 49).
Unless otherwise specified, the parameters given in Table 49 are derived from tests
performed under the ambient temperature and VDD supply voltage conditions summarized
in Table 14.
Figure 39. Recommended NRST pin protection
1. The reset network protects the device against parasitic resets.
2. The user must ensure that the level on the NRST pin can go below the VIL(NRST) max level specified in
Table 49. Otherwise the reset is not taken into account by the device.
Table 49. NRST pin characteristics
Symbol Parameter Conditions Min Typ Max Unit
VIL(NRST)
(1) NRST input low level voltage TTL ports
2.7 V ≤ VDD ≤ 3.6 V
- - 0.8V
VIH(NRST)
(1) NRST input high level voltage 2 - -
VIL(NRST)
(1) NRST input low level voltage CMOS ports
1.8 V ≤ VDD ≤ 3.6 V
- - 0.3VDD V
VIH(NRST)
(1) NRST input high level voltage 0.7VDD - -
Vhys(NRST)
NRST Schmitt trigger voltage
hysteresis - 200 - mV
RPU Weak pull-up equivalent resistor(2) VIN = VSS 30 40 50 kΩ
VF(NRST)
(1) NRST Input filtered pulse - - 100 ns
VNF(NRST)
(1) NRST Input not filtered pulse VDD > 2.7 V 300 - - ns
TNRST_OUT Generated reset pulse duration Internal Reset source 20 - - μs
1. Guaranteed by design, not tested in production.
2. The pull-up is designed with a true resistance in series with a switchable PMOS. This PMOS contribution to the series
resistance must be minimum (~10% order).
ai14132c
STM32Fxxx
NRST(2) RPU
VDD
Filter
Internal Reset
0.1 μF
External
reset circuit(1)
DocID15818 Rev 11 107/178
STM32F20xxx Electrical characteristics
177
6.3.18 TIM timer characteristics
The parameters given in Table 50 and Table 51 are guaranteed by design.
Refer to Section 6.3.16: I/O port characteristics for details on the input/output alternate
function characteristics (output compare, input capture, external clock, PWM output).
Table 50. Characteristics of TIMx connected to the APB1 domain(1)
1. TIMx is used as a general term to refer to the TIM2, TIM3, TIM4, TIM5, TIM6, TIM7, and TIM12 timers.
Symbol Parameter Conditions Min Max Unit
tres(TIM) Timer resolution time
AHB/APB1
prescaler distinct
from 1, fTIMxCLK =
60 MHz
1 - tTIMxCLK
16.7 - ns
AHB/APB1
prescaler = 1,
fTIMxCLK = 30 MHz
1 - tTIMxCLK
33.3 - ns
fEXT
Timer external clock
frequency on CH1 to CH4
fTIMxCLK = 60 MHz
APB1= 30 MHz
0 fTIMxCLK/2 MHz
0 30 MHz
ResTIM Timer resolution - 16/32 bit
tCOUNTER
16-bit counter clock period
when internal clock is
selected
1 65536 tTIMxCLK
0.0167 1092 μs
32-bit counter clock period
when internal clock is
selected
1 - tTIMxCLK
0.0167 71582788 μs
tMAX_COUNT Maximum possible count
- 65536 × 65536 tTIMxCLK
- 71.6 s
Electrical characteristics STM32F20xxx
108/178 DocID15818 Rev 11
6.3.19 Communications interfaces
I2C interface characteristics
STM32F205xx and STM32F207xx I2C interface meets the requirements of the standard I2C
communication protocol with the following restrictions: the I/O pins SDA and SCL are
mapped to are not “true” open-drain. When configured as open-drain, the PMOS connected
between the I/O pin and VDD is disabled, but is still present.
The I2C characteristics are described in Table 52. Refer also to Section 6.3.16: I/O port
characteristics for more details on the input/output alternate function characteristics (SDA
and SCL).
Table 51. Characteristics of TIMx connected to the APB2 domain(1)
1. TIMx is used as a general term to refer to the TIM1, TIM8, TIM9, TIM10, and TIM11 timers.
Symbol Parameter Conditions Min Max Unit
tres(TIM) Timer resolution time
AHB/APB2
prescaler distinct
from 1, fTIMxCLK =
120 MHz
1 - tTIMxCLK
8.3 - ns
AHB/APB2
prescaler = 1,
fTIMxCLK = 60 MHz
1 - tTIMxCLK
16.7 - ns
fEXT
Timer external clock
frequency on CH1 to CH4
fTIMxCLK = 120 MHz
APB2 = 60 MHz
0 fTIMxCLK/2 MHz
0 60 MHz
ResTIM Timer resolution - 16 bit
tCOUNTER
16-bit counter clock period
when internal clock is
selected
1 65536 tTIMxCLK
0.0083 546 μs
tMAX_COUNT Maximum possible count
- 65536 × 65536 tTIMxCLK
- 35.79 s
DocID15818 Rev 11 109/178
STM32F20xxx Electrical characteristics
177
Table 52. I2C characteristics
Symbol Parameter
Standard mode
I2C(1)(2)
1. Guaranteed by design, not tested in production.
Fast mode I2C(1)(2)
2. fPCLK1 must be at least 2 MHz to achieve standard mode I2C frequencies. It must be at least 4 MHz to
achieve fast mode I2C frequencies, and a multiple of 10 MHz to reach the 400 kHz maximum I2C fast mode
clock.
Unit
Min Max Min Max
tw(SCLL) SCL clock low time 4.7 - 1.3 -
μs
tw(SCLH) SCL clock high time 4.0 - 0.6 -
tsu(SDA) SDA setup time 250 - 100 -
ns
th(SDA) SDA data hold time - 3450(3) - 900(3)
3. The maximum Data hold time has only to be met if the interface does not stretch the low period of the SCL
signal.
tr(SDA)
tr(SCL)
SDA and SCL rise time - 1000 - 300
tf(SDA)
tf(SCL)
SDA and SCL fall time - 300 - 300
th(STA) Start condition hold time 4.0 - 0.6 -
μs
tsu(STA)
Repeated Start condition
setup time 4.7 - 0.6 -
tsu(STO) Stop condition setup time 4.0 - 0.6 - μs
tw(STO:STA)
Stop to Start condition time
(bus free) 4.7 - 1.3 - μs
Cb
Capacitive load for each bus
line - 400 - 400 pF
tSP
Pulse width of the spikes
that are suppressed by the
analog filter
0 50(4)
4. The minimum width of the spikes filtered by the analog filter is above tSP(max).
0 50 ns
Electrical characteristics STM32F20xxx
110/178 DocID15818 Rev 11
Figure 40. I2C bus AC waveforms and measurement circuit
1. RS= series protection resistor.
2. RP = external pull-up resistor.
3. VDD_I2C is the I2C bus power supply.
Table 53. SCL frequency (fPCLK1= 30 MHz.,VDD = 3.3 V)(1)(2)
1. RP = External pull-up resistance, fSCL = I2C speed,
2. For speeds around 200 kHz, the tolerance on the achieved speed is of ±5%. For other speed ranges, the
tolerance on the achieved speed ±2%. These variations depend on the accuracy of the external
components used to design the application.
fSCL (kHz)
I2C_CCR value
RP = 4.7 kΩ
400 0x8019
300 0x8021
200 0x8032
100 0x0096
50 0x012C
20 0x02EE
ai14979c
S TAR T
SD A
RP
I²C bus
VDD_I2C
STM32Fxx
SDA
SCL
tf(SDA) tr(SDA)
SCL
th(STA)
tw(SCLH)
tw(SCLL)
tsu(SDA)
tr(SCL) tf(SCL)
th(SDA)
S TAR T REPEATED
t S TAR T su(STA)
tsu(STO)
S TOP tw(STO:STA)
VDD_I2C
RP RS
RS
DocID15818 Rev 11 111/178
STM32F20xxx Electrical characteristics
177
I2S - SPI interface characteristics
Unless otherwise specified, the parameters given in Table 54 for SPI or in Table 55 for I2S
are derived from tests performed under the ambient temperature, fPCLKx frequency and VDD
supply voltage conditions summarized in Table 14.
Refer to Section 6.3.16: I/O port characteristics for more details on the input/output alternate
function characteristics (NSS, SCK, MOSI, MISO for SPI and WS, CK, SD for I2S).
Table 54. SPI characteristics
Symbol Parameter Conditions Min Max Unit
fSCK
1/tc(SCK)
SPI clock frequency
SPI1 master/slave mode - 30
MHz
SPI2/SPI3 master/slave mode - 15
tr(SCL)
tf(SCL)
SPI clock rise and fall
time
Capacitive load: C = 30 pF,
fPCLK = 30 MHz
- 8 ns
DuCy(SCK) SPI slave input clock
duty cycle Slave mode 30 70 %
tsu(NSS)
(1)
1. Based on characterization, not tested in production.
NSS setup time Slave mode 4tPCLK -
ns
th(NSS)
(1) NSS hold time Slave mode 2tPCLK -
tw(SCLH)
(1)
tw(SCLL)
(1) SCK high and low time Master mode, fPCLK = 30 MHz,
presc = 2 tPCLK-3 tPCLK+3
tsu(MI)
(1)
tsu(SI)
(1) Data input setup time
Master mode 5 -
Slave mode 5 -
th(MI)
(1)
th(SI)
(1) Data input hold time
Master mode 5 -
Slave mode 4 -
ta(SO)
(1)(2)
2. Min time is for the minimum time to drive the output and the max time is for the maximum time to validate
the data.
Data output access
time Slave mode, fPCLK = 30 MHz 0 3tPCLK
tdis(SO)
(1)(3)
3. Min time is for the minimum time to invalidate the output and the max time is for the maximum time to put
the data in Hi-Z
Data output disable
time Slave mode 2 10
tv(SO)
(1) Data output valid time Slave mode (after enable edge) - 25
tv(MO)
(1) Data output valid time Master mode (after enable edge) - 5
th(SO)
(1)
Data output hold time
Slave mode (after enable edge) 15 -
th(MO)
(1) Master mode (after enable edge) 2 -
Electrical characteristics STM32F20xxx
112/178 DocID15818 Rev 11
Figure 41. SPI timing diagram - slave mode and CPHA = 0
Figure 42. SPI timing diagram - slave mode and CPHA = 1
ai14134c
SCK Input
CPHA=0
MOSI
INPUT
MISO
OUT PUT
CPHA=0
MSB O UT
MSB IN
BIT6 OUT
LSB IN
LSB OUT
CPOL=0
CPOL=1
BIT1 IN
NSS input
tSU(NSS)
tc(SCK)
th(NSS)
ta(SO)
tw(SCKH)
tw(SCKL)
tv(SO) th(SO) tr(SCK)
tf(SCK)
tdis(SO)
tsu(SI)
th(SI)
ai14135
SCK Input
CPHA=1
MOSI
INPUT
MISO
OUT PUT
CPHA=1
MSB O UT
MSB IN
BIT6 OUT
LSB IN
LSB OUT
CPOL=0
CPOL=1
BIT1 IN
tSU(NSS) tc(SCK) th(NSS)
ta(SO)
tw(SCKH)
tw(SCKL)
tv(SO) th(SO)
tr(SCK)
tf(SCK)
tdis(SO)
tsu(SI) th(SI)
NSS input
DocID15818 Rev 11 113/178
STM32F20xxx Electrical characteristics
177
Figure 43. SPI timing diagram - master mode
ai14136V2
SCK Output
CPHA=0
MOSI
OUTPUT
MISO
INPUT
CPHA=0
MSBIN
MSB OUT
BIT6 IN
LSB OUT
LSB IN
CPOL=0
CPOL=1
BIT1 OUT
NSS input
tc(SCK)
tw(SCKH)
tw(SCKL)
tr(SCK)
tf(SCK)
th(MI)
High
SCK Output
CPHA=1
CPHA=1
CPOL=0
CPOL=1
tsu(MI)
tv(MO) th(MO)
Electrical characteristics STM32F20xxx
114/178 DocID15818 Rev 11
Table 55. I2S characteristics
Symbol Parameter Conditions Min Max Unit
fCK
1/tc(CK)
I2S clock frequency
Master, 16-bit data,
audio frequency = 48 kHz, main
clock disabled
1.23 1.24
MHz
Slave 0 64FS
(1)
tr(CK)
tf(CK)
I2S clock rise and fall time capacitive load CL = 50 pF - (2)
ns
tv(WS)
(3) WS valid time Master 0.3 -
th(WS)
(3) WS hold time Master 0 -
tsu(WS)
(3) WS setup time Slave 3 -
th(WS)
(3) WS hold time Slave 0 -
tw(CKH)
(3)
tw(CKL)
(3) CK high and low time Master fPCLK= 30 MHz 396 -
tsu(SD_MR)
(3)
tsu(SD_SR)
(3) Data input setup time Master receiver
Slave receiver
45
0 -
th(SD_MR)
(3)(4)
th(SD_SR)
(3)(4) Data input hold time Master receiver: fPCLK= 30 MHz,
Slave receiver: fPCLK= 30 MHz
13
0 -
tv(SD_ST)
(3)(4) Data output valid time Slave transmitter (after enable
edge) - 30
th(SD_ST)
(3) Data output hold time Slave transmitter (after enable
edge) 10 -
tv(SD_MT)
(3)(4) Data output valid time Master transmitter (after enable
edge) - 6
th(SD_MT)
(3) Data output hold time Master transmitter (after enable
edge) 0 -
1. FS is the sampling frequency. Refer to the I2S section of the STM32F20xxx/21xxx reference manual for more details. fCK
values reflect only the digital peripheral behavior which leads to a minimum of (I2SDIV/(2*I2SDIV+ODD), a maximum of
(I2SDIV+ODD)/(2*I2SDIV+ODD) and FS maximum values for each mode/condition.
2. Refer to Table 48: I/O AC characteristics.
3. Based on design simulation and/or characterization results, not tested in production.
4. Depends on fPCLK. For example, if fPCLK=8 MHz, then TPCLK = 1/fPLCLK =125 ns.
DocID15818 Rev 11 115/178
STM32F20xxx Electrical characteristics
177
Figure 44. I2S slave timing diagram (Philips protocol)(1)
1. LSB transmit/receive of the previously transmitted byte. No LSB transmit/receive is sent before the first
byte.
Figure 45. I2S master timing diagram (Philips protocol)(1)
1. Based on characterization, not tested in production.
2. LSB transmit/receive of the previously transmitted byte. No LSB transmit/receive is sent before the first
byte.
CK Input
CPOL = 0
CPOL = 1
tc(CK)
WS input
SDtransmit
SDreceive
tw(CKH) tw(CKL)
tsu(WS) tv(SD_ST) th(SD_ST)
th(WS)
tsu(SD_SR) th(SD_SR)
MSB receive Bitn receive LSB receive
MSB transmit Bitn transmit LSB transmit
ai14881b
LSB receive(2)
LSB transmit(2)
CK output
CPOL = 0
CPOL = 1
tc(CK)
WS output
SDreceive
SDtransmit
tw(CKH)
tw(CKL)
tsu(SD_MR)
tv(SD_MT) th(SD_MT)
th(WS)
th(SD_MR)
MSB receive Bitn receive LSB receive
MSB transmit Bitn transmit LSB transmit
ai14884b
tf(CK) tr(CK)
tv(WS)
LSB receive(2)
LSB transmit(2)
Electrical characteristics STM32F20xxx
116/178 DocID15818 Rev 11
USB OTG FS characteristics
The USB OTG interface is USB-IF certified (Full-Speed). This interface is present in both
the USB OTG HS and USB OTG FS controllers.
Table 56. USB OTG FS startup time
Symbol Parameter Max Unit
tSTARTUP
(1)
1. Guaranteed by design, not tested in production.
USB OTG FS transceiver startup time 1 μs
Table 57. USB OTG FS DC electrical characteristics
Symbol Parameter Conditions Min.(1)
1. All the voltages are measured from the local ground potential.
Typ. Max.(1) Unit
Input
levels
VDD
USB OTG FS operating
voltage 3.0(2)
2. The STM32F205xx and STM32F207xx USB OTG FS functionality is ensured down to 2.7 V but not the full
USB OTG FS electrical characteristics which are degraded in the 2.7-to-3.0 V VDD voltage range.
- 3.6 V
VDI
(3)
3. Guaranteed by design, not tested in production.
Differential input sensitivity I(USB_FS_DP/DM,
USB_HS_DP/DM) 0.2 - -
VCM V
(3) Differential common mode
range Includes VDI range 0.8 - 2.5
VSE
(3) Single ended receiver
threshold 1.3 - 2.0
Output
levels
VOL Static output level low RL of 1.5 kΩ to 3.6 V(4)
4. RL is the load connected on the USB OTG FS drivers
- - 0.3
V
VOH Static output level high RL of 15 kΩ to VSS
(4) 2.8 - 3.6
RPD
PA11, PA12, PB14, PB15
(USB_FS_DP/DM,
USB_HS_DP/DM)
VIN = VDD
17 21 24
kΩ
PA9, PB13
(OTG_FS_VBUS,
OTG_HS_VBUS)
0.65 1.1 2.0
RPU
PA12, PB15 (USB_FS_DP,
USB_HS_DP) VIN = VSS 1.5 1.8 2.1
PA9, PB13
(OTG_FS_VBUS,
OTG_HS_VBUS)
VIN = VSS 0.25 0.37 0.55
DocID15818 Rev 11 117/178
STM32F20xxx Electrical characteristics
177
Figure 46. USB OTG FS timings: definition of data signal rise and fall time
USB HS characteristics
Table 59 shows the USB HS operating voltage.
Table 58. USB OTG FS electrical characteristics(1)
1. Guaranteed by design, not tested in production.
Driver characteristics
Symbol Parameter Conditions Min Max Unit
tr Rise time(2)
2. Measured from 10% to 90% of the data signal. For more detailed informations, please refer to USB
Specification - Chapter 7 (version 2.0).
CL = 50 pF 4 20 ns
tf Fall time(2) CL = 50 pF 4 20 ns
trfm Rise/ fall time matching tr/tf 90 110 %
VCRS Output signal crossover voltage 1.3 2.0 V
Table 59. USB HS DC electrical characteristics
Symbol Parameter Min.(1)
1. All the voltages are measured from the local ground potential.
Max.(1) Unit
Input level VDD USB OTG HS operating voltage 2.7 3.6 V
Table 60. Clock timing parameters
Parameter(1)
1. Guaranteed by design, not tested in production.
Symbol Min Nominal Max Unit
Frequency (first transition) 8-bit ±10% FSTART_8BIT 54 60 66 MHz
Frequency (steady state) ±500 ppm FSTEADY 59.97 60 60.03 MHz
Duty cycle (first transition) 8-bit ±10% DSTART_8BIT 40 50 60 %
Duty cycle (steady state) ±500 ppm DSTEADY 49.975 50 50.025 %
Time to reach the steady state frequency and
duty cycle after the first transition TSTEADY - - 1.4 ms
Clock startup time after the
de-assertion of SuspendM
Peripheral TSTART_DEV - - 5.6
ms
Host TSTART_HOST - - -
PHY preparation time after the first transition
of the input clock TPREP - - - μs
ai14137
tf
Differen tial
Data L ines
VSS
VCRS
tr
Crossover
points
Electrical characteristics STM32F20xxx
118/178 DocID15818 Rev 11
Figure 47. ULPI timing diagram
Ethernet characteristics
Table 62 shows the Ethernet operating voltage.
Table 63 gives the list of Ethernet MAC signals for the SMI (station management interface)
and Figure 48 shows the corresponding timing diagram.
Table 61. ULPI timing
Symbol Parameter
Value(1)
1. VDD = 2.7 V to 3.6 V and TA = –40 to 85 °C.
Unit
Min. Max.
tSC
Control in (ULPI_DIR) setup time - 2.0
ns
Control in (ULPI_NXT) setup time - 1.5
tHC Control in (ULPI_DIR, ULPI_NXT) hold time 0 -
tSD Data in setup time - 2.0
tHD Data in hold time 0 -
tDC Control out (ULPI_STP) setup time and hold time - 9.2
tDD Data out available from clock rising edge - 10.7
Table 62. Ethernet DC electrical characteristics
Symbol Parameter Min.(1)
1. All the voltages are measured from the local ground potential.
Max.(1) Unit
Input level VDD Ethernet operating voltage 2.7 3.6 V
Clock
Control In
(ULPI_DIR,
ULPI_NXT)
data In
(8-bit)
Control out
(ULPI_STP)
data out
(8-bit)
tDD
tDC
tSD tHD
tSC tHC
ai17361c
tDC
DocID15818 Rev 11 119/178
STM32F20xxx Electrical characteristics
177
Figure 48. Ethernet SMI timing diagram
Table 64 gives the list of Ethernet MAC signals for the RMII and Figure 49 shows the
corresponding timing diagram.
Figure 49. Ethernet RMII timing diagram
Table 63. Dynamics characteristics: Ethernet MAC signals for SMI
Symbol Rating Min Typ Max Unit
tMDC MDC cycle time (2.38 MHz) 411 420 425 ns
td(MDIO) MDIO write data valid time 6 10 13 ns
tsu(MDIO) Read data setup time 12 - - ns
th(MDIO) Read data hold time 0 - - ns
Table 64. Dynamics characteristics: Ethernet MAC signals for RMII
Symbol Rating Min Typ Max Unit
tsu(RXD) Receive data setup time 1 - -
ns
tih(RXD) Receive data hold time 1.5 - -
tsu(CRS) Carrier sense set-up time 0 - -
tih(CRS) Carrier sense hold time 2 - -
td(TXEN) Transmit enable valid delay time 9 11 13
td(TXD) Transmit data valid delay time 9 11.5 14
ETH_MDC
ETH_MDIO(O)
ETH_MDIO(I)
tMDC
td(MDIO)
tsu(MDIO) th(MDIO)
ai15666d
RMII_REF_CLK
RMII_TX_EN
RMII_TXD[1:0]
RMII_RXD[1:0]
RMII_CRS_DV
td(TXEN)
td(TXD)
tsu(RXD)
tsu(CRS)
tih(RXD)
tih(CRS)
ai15667
Electrical characteristics STM32F20xxx
120/178 DocID15818 Rev 11
Table 65 gives the list of Ethernet MAC signals for MII and Figure 49 shows the
corresponding timing diagram.
Figure 50. Ethernet MII timing diagram
CAN (controller area network) interface
Refer to Section 6.3.16: I/O port characteristics for more details on the input/output alternate
function characteristics (CANTX and CANRX).
Table 65. Dynamics characteristics: Ethernet MAC signals for MII
Symbol Rating Min Typ Max Unit
tsu(RXD) Receive data setup time 7.5 - - ns
tih(RXD) Receive data hold time 1 - - ns
tsu(DV) Data valid setup time 4 - - ns
tih(DV) Data valid hold time 0 - - ns
tsu(ER) Error setup time 3.5 - - ns
tih(ER) Error hold time 0 - - ns
td(TXEN) Transmit enable valid delay time - 11 14 ns
td(TXD) Transmit data valid delay time - 11 14 ns
MII_RX_CLK
MII_RXD[3:0]
MII_RX_DV
MII_RX_ER
td(TXEN)
td(TXD)
tsu(RXD)
tsu(ER)
tsu(DV)
tih(RXD)
tih(ER)
tih(DV)
ai15668
MII_TX_CLK
MII_TX_EN
MII_TXD[3:0]
DocID15818 Rev 11 121/178
STM32F20xxx Electrical characteristics
177
6.3.20 12-bit ADC characteristics
Unless otherwise specified, the parameters given in Table 66 are derived from tests
performed under the ambient temperature, fPCLK2 frequency and VDDA supply voltage
conditions summarized in Table 14.
Table 66. ADC characteristics
Symbol Parameter Conditions Min Typ Max Unit
VDDA Power supply 1.8(1) - 3.6 V
VREF+ Positive reference voltage 1.8(1)(2) - VDDA V
fADC ADC clock frequency
VDDA = 1.8(1) to 2.4 V 0.6 - 15 MHz
VDDA = 2.4 to 3.6 V 0.6 - 30 MHz
fTRIG
(3) External trigger frequency
fADC = 30 MHz with
12-bit resolution - - 1764 kHz
- - 17 1/fADC
VAIN Conversion voltage range(4) 0 (VSSA or VREFtied
to ground) - VREF+ V
RAIN
(3) External input impedance See Equation 1 for
details - - 50 kΩ
RADC
(3)(5) Sampling switch resistance 1.5 - 6 kΩ
CADC
(3) Internal sample and hold
capacitor - 4 - pF
tlat
(3) Injection trigger conversion
latency
fADC = 30 MHz - - 0.100 μs
- - 3(6) 1/fADC
tlatr
(3) Regular trigger conversion latency
fADC = 30 MHz - - 0.067 μs
- - 2(6) 1/fADC
tS
(3) Sampling time
fADC = 30 MHz 0.100 - 16 μs
3 - 480 1/fADC
tSTAB
(3) Power-up time - 2 3 μs
tCONV
(3) Total conversion time (including
sampling time)
fADC = 30 MHz
12-bit resolution
0.5 - 16.40 μs
fADC = 30 MHz
10-bit resolution
0.43 - 16.34 μs
fADC = 30 MHz
8-bit resolution
0.37 - 16.27 μs
fADC = 30 MHz
6-bit resolution
0.3 - 16.20 μs
9 to 492 (tS for sampling +n-bit resolution for successive
approximation) 1/fADC
Electrical characteristics STM32F20xxx
122/178 DocID15818 Rev 11
Equation 1: RAIN max formula
The formula above (Equation 1) is used to determine the maximum external impedance
allowed for an error below 1/4 of LSB. N = 12 (from 12-bit resolution) and k is the number of
sampling periods defined in the ADC_SMPR1 register.
a
Note: ADC accuracy vs. negative injection current: injecting a negative current on any analog
input pins should be avoided as this significantly reduces the accuracy of the conversion
fS
(3) Sampling rate
(fADC = 30 MHz)
12-bit resolution
Single ADC
- - 2 Msps
12-bit resolution
Interleave Dual ADC
mode
- - 3.75 Msps
12-bit resolution
Interleave Triple ADC
mode
- - 6 Msps
IVREF+
(3) ADC VREF DC current
consumption in conversion mode - 300 500 μA
IVDDA
(3) ADC VDDA DC current
consumption in conversion mode - 1.6 1.8 mA
1. On devices in WLCSP64+2 package, if IRROFF is set to VDD, the supply voltage can drop to 1.7 V when the device
operates in the 0 to 70 °C temperature range using an external power supply supervisor (see Section 3.16).
2. It is recommended to maintain the voltage difference between VREF+ and VDDA below 1.8 V.
3. Based on characterization, not tested in production.
4. VREF+ is internally connected to VDDA and VREF- is internally connected to VSSA.
5. RADC maximum value is given for VDD=1.8 V, and minimum value for VDD=3.3 V.
6. For external triggers, a delay of 1/fPCLK2 must be added to the latency specified in Table 66.
Table 66. ADC characteristics (continued)
Symbol Parameter Conditions Min Typ Max Unit
Table 67. ADC accuracy (1)
1. Better performance could be achieved in restricted VDD, frequency and temperature ranges.
Symbol Parameter Test conditions Typ Max(2)
2. Based on characterization, not tested in production.
Unit
ET Total unadjusted error
fPCLK2 = 60 MHz,
fADC = 30 MHz, RAIN < 10 kΩ,
VDDA = 1.8(3) to 3.6 V
3. On devices in WLCSP64+2 package, if IRROFF is set to VDD, the supply voltage can drop to 1.7 V when
the device operates in the 0 to 70 °C temperature range using an external power supply supervisor (see
Section 3.16).
±2 ±5
LSB
EO Offset error ±1.5 ±2.5
EG Gain error ±1.5 ±3
ED Differential linearity error ±1 ±2
EL Integral linearity error ±1.5 ±3
RAIN
(k – 0.5)
fADC CADC 2N + 2 × × ln( )
= -------------------------------------------------------------- – RADC
DocID15818 Rev 11 123/178
STM32F20xxx Electrical characteristics
177
being performed on another analog input. It is recommended to add a Schottky diode (pin to
ground) to analog pins which may potentially inject negative currents.
Any positive injection current within the limits specified for IINJ(PIN) and ΣIINJ(PIN) in
Section 6.3.16 does not affect the ADC accuracy.
Figure 51. ADC accuracy characteristics
1. Example of an actual transfer curve.
2. Ideal transfer curve.
3. End point correlation line.
4. ET = Total Unadjusted Error: maximum deviation between the actual and the ideal transfer curves.
EO = Offset Error: deviation between the first actual transition and the first ideal one.
EG = Gain Error: deviation between the last ideal transition and the last actual one.
ED = Differential Linearity Error: maximum deviation between actual steps and the ideal one.
EL = Integral Linearity Error: maximum deviation between any actual transition and the end point
correlation line.
Figure 52. Typical connection diagram using the ADC
1. Refer to Table 66 for the values of RAIN, RADC and CADC.
2. Cparasitic represents the capacitance of the PCB (dependent on soldering and PCB layout quality) plus the
ai14395c
EO
EG
1L SBIDEAL
4095
4094
4093
5
4
3
2
1
0
7
6
1 2 3 456 7 4093 4094 4095 4096
(1)
(2)
ET
ED
EL
(3)
VSSA VDDA
VREF+
4096
(or depending on package)]
VDDA
4096
[1LSB IDEAL =
ai17534
VDD STM32F
AINx
IL±1 μA
0.6 V
VT
RAIN
(1)
Cparasitic
VAIN
0.6 V
VT
RADC
(1)
CADC(1)
12-bit
converter
Sample and hold ADC
converter
Electrical characteristics STM32F20xxx
124/178 DocID15818 Rev 11
pad capacitance (roughly 7 pF). A high Cparasitic value downgrades conversion accuracy. To remedy this,
fADC should be reduced.
DocID15818 Rev 11 125/178
STM32F20xxx Electrical characteristics
177
General PCB design guidelines
Power supply decoupling should be performed as shown in Figure 53 or Figure 54,
depending on whether VREF+ is connected to VDDA or not. The 10 nF capacitors should be
ceramic (good quality). They should be placed them as close as possible to the chip.
Figure 53. Power supply and reference decoupling (VREF+ not connected to VDDA)
1. VREF+ and VREF– inputs are both available on UFBGA176 package. VREF+ is also available on all packages
except for LQFP64. When VREF+ and VREF– are not available, they are internally connected to VDDA and
VSSA.
Figure 54. Power supply and reference decoupling (VREF+ connected to VDDA)
1. VREF+ and VREF– inputs are both available on UFBGA176 package. VREF+ is also available on all packages
except for LQFP64. When VREF+ and VREF– are not available, they are internally connected to VDDA and
VSSA.
VREF+
STM32F
VDDA
VSSA/V REF-
1 μF // 10 nF
1 μF // 10 nF
ai17535
(See note 1)
(See note 1)
VREF+/VDDA
STM32F
1 μF // 10 nF
VREF–/VSSA
ai17536
(See note 1)
(See note 1)
Electrical characteristics STM32F20xxx
126/178 DocID15818 Rev 11
6.3.21 DAC electrical characteristics
Table 68. DAC characteristics
Symbol Parameter Min Typ Max Unit Comments
VDDA Analog supply voltage 1.8(1) - 3.6 V
VREF+ Reference supply voltage 1.8(1) - 3.6 V VREF+ ≤ VDDA
VSSA Ground 0 - 0 V
RLOAD
(2) Resistive load with buffer ON 5 - - kΩ
RO
(2) Impedance output with buffer
OFF - - 15 kΩ
When the buffer is OFF, the
Minimum resistive load between
DAC_OUT and VSS to have a 1%
accuracy is 1.5 MΩ
CLOAD
(2) Capacitive load - - 50 pF
Maximum capacitive load at
DAC_OUT pin (when the buffer is
ON).
DAC_OUT
min(2)
Lower DAC_OUT voltage
with buffer ON 0.2 - - V
It gives the maximum output
excursion of the DAC.
It corresponds to 12-bit input code
(0x0E0) to (0xF1C) at VREF+ =
3.6 V and (0x1C7) to (0xE38) at
VREF+ = 1.8 V
DAC_OUT
max(2)
Higher DAC_OUT voltage
with buffer ON - - VDDA – 0.2 V
DAC_OUT
min(2)
Lower DAC_OUT voltage
with buffer OFF - 0.5 - mV
It gives the maximum output
DAC_OUT excursion of the DAC.
max(2)
Higher DAC_OUT voltage
with buffer OFF - - VREF+ – 1LSB V
IVREF+
(4)
DAC DC VREF current
consumption in quiescent
mode (Standby mode)
- 170 240
μA
With no load, worst code (0x800)
at VREF+ = 3.6 V in terms of DC
consumption on the inputs
- 50 75
With no load, worst code (0xF1C)
at VREF+ = 3.6 V in terms of DC
consumption on the inputs
IDDA
(4)
DAC DC VDDA current
consumption in quiescent
mode(3)
- 280 380 μA With no load, middle code (0x800)
on the inputs
- 475 625 μA
With no load, worst code (0xF1C)
at VREF+ = 3.6 V in terms of DC
consumption on the inputs
DNL(4)
Differential non linearity
Difference between two
consecutive code-1LSB)
- - ±0.5 LSBGiven for the DAC in 10-bit
configuration.
- - ±2 LSBGiven for the DAC in 12-bit
configuration.
DocID15818 Rev 11 127/178
STM32F20xxx Electrical characteristics
177
INL(4)
Integral non linearity
(difference between
measured value at Code i
and the value at Code i on a
line drawn between Code 0
and last Code 1023)
- - ±1 LSBGiven for the DAC in 10-bit
configuration.
- - ±4 LSBGiven for the DAC in 12-bit
configuration.
Offset(4)
Offset error
(difference between
measured value at Code
(0x800) and the ideal value =
VREF+/2)
- - ±10 mV
- - ±3 LSBGiven for the DAC in 10-bit at
VREF+ = 3.6 V
- - ±12 LSBGiven for the DAC in 12-bit at
VREF+ = 3.6 V
Gain
error(4) Gain error - - ±0.5 % Given for the DAC in 12-bit
configuration
tSETTLING
(4)
Settling time (full scale: for a
10-bit input code transition
between the lowest and the
highest input codes when
DAC_OUT reaches final
value ±4LSB
- 3 6 μs CLOAD ≤ 50 pF,
RLOAD ≥ 5 kΩ
THD(4) Total Harmonic Distortion
Buffer ON
- - - dB CLOAD ≤ 50 pF,
RLOAD ≥ 5 kΩ
Update
rate(2)
Max frequency for a correct
DAC_OUT change when
small variation in the input
code (from code i to i+1LSB)
- - 1 MS/s CLOAD ≤ 50 pF,
RLOAD ≥ 5 kΩ
tWAKEUP
(4)
Wakeup time from off state
(Setting the ENx bit in the
DAC Control register)
- 6.5 10 μs
CLOAD ≤ 50 pF, RLOAD ≥ 5 kΩ
input code between lowest and
highest possible ones.
PSRR+ (2)
Power supply rejection ratio
(to VDDA) (static DC
measurement)
- –67 –40 dB No RLOAD, CLOAD = 50 pF
1. On devices in WLCSP64+2 package, if IRROFF is set to VDD, the supply voltage can drop to 1.7 V when the device
operates in the 0 to 70 °C temperature range using an external power supply supervisor (see Section 3.16).
2. Guaranteed by design, not tested in production.
3. The quiescent mode corresponds to a state where the DAC maintains a stable output level to ensure that no dynamic
consumption occurs.
4. Guaranteed by characterization, not tested in production.
Table 68. DAC characteristics (continued)
Symbol Parameter Min Typ Max Unit Comments
Electrical characteristics STM32F20xxx
128/178 DocID15818 Rev 11
Figure 55. 12-bit buffered /non-buffered DAC
1. The DAC integrates an output buffer that can be used to reduce the output impedance and to drive external loads directly
without the use of an external operational amplifier. The buffer can be bypassed by configuring the BOFFx bit in the
DAC_CR register.
6.3.22 Temperature sensor characteristics
6.3.23 VBAT monitoring characteristics
RLOAD
CLOAD
Buffered/Non-buffered DAC
DAC_OUTx
Buffer(1)
12-bit
digital to
analog
converter
ai17157V2
Table 69. TS characteristics
Symbol Parameter Min Typ Max Unit
TL
(1)
1. Based on characterization, not tested in production.
VSENSE linearity with temperature - ±1 ±2 °C
Avg_Slope(1) Average slope - 2.5 mV/°C
V25
(1) Voltage at 25 °C - 0.76 V
tSTART
(2)
2. Guaranteed by design, not tested in production.
Startup time - 6 10 μs
TS_temp
(3)(2)
3. Shortest sampling time can be determined in the application by multiple iterations.
ADC sampling time when reading the
temperature
1°C accuracy
10 - - μs
Table 70. VBAT monitoring characteristics
Symbol Parameter Min Typ Max Unit
R Resistor bridge for VBAT - 50 - KΩ
Q Ratio on VBAT measurement - 2 -
Er(1)
1. Guaranteed by design, not tested in production.
Error on Q –1 - +1 %
TS_vbat
(2)(2)
2. Shortest sampling time can be determined in the application by multiple iterations.
ADC sampling time when reading the VBAT
1mV accuracy
5 - - μs
DocID15818 Rev 11 129/178
STM32F20xxx Electrical characteristics
177
6.3.24 Embedded reference voltage
The parameters given in Table 71 are derived from tests performed under ambient
temperature and VDD supply voltage conditions summarized in Table 14.
6.3.25 FSMC characteristics
Asynchronous waveforms and timings
Figure 56 through Figure 59 represent asynchronous waveforms and Table 72 through
Table 75 provide the corresponding timings. The results shown in these tables are obtained
with the following FSMC configuration:
• AddressSetupTime = 1
• AddressHoldTime = 1
• DataSetupTime = 1
• BusTurnAroundDuration = 0x0
In all timing tables, the THCLK is the HCLK clock period.
Table 71. Embedded internal reference voltage
Symbol Parameter Conditions Min Typ Max Unit
VREFINT Internal reference voltage –40 °C < TA < +105 °C 1.18 1.21 1.24 V
TS_vrefint
(1)
1. Shortest sampling time can be determined in the application by multiple iterations.
ADC sampling time when
reading the internal reference
voltage
10 - - μs
VRERINT_s
(2)
2. Guaranteed by design, not tested in production.
Internal reference voltage
spread over the temperature
range
VDD = 3 V - 3 5 mV
TCoeff
(2) Temperature coefficient - 30 50 ppm/°C
tSTART
(2) Startup time - 6 10 μs
Electrical characteristics STM32F20xxx
130/178 DocID15818 Rev 11
Figure 56. Asynchronous non-multiplexed SRAM/PSRAM/NOR read waveforms
1. Mode 2/B, C and D only. In Mode 1, FSMC_NADV is not used.
Table 72. Asynchronous non-multiplexed SRAM/PSRAM/NOR read timings(1)(2)
Symbol Parameter Min Max Unit
tw(NE) FSMC_NE low time 2THCLK– 0.5 2THCLK+0.5 ns
tv(NOE_NE) FSMC_NEx low to FSMC_NOE low 0.5 2.5 ns
tw(NOE) FSMC_NOE low time 2THCLK- 1 2THCLK+ 0.5 ns
th(NE_NOE) FSMC_NOE high to FSMC_NE high hold time 0 - ns
tv(A_NE) FSMC_NEx low to FSMC_A valid - 4 ns
th(A_NOE) Address hold time after FSMC_NOE high 0 - ns
tv(BL_NE) FSMC_NEx low to FSMC_BL valid - 0.5 ns
th(BL_NOE) FSMC_BL hold time after FSMC_NOE high 0 - ns
tsu(Data_NE) Data to FSMC_NEx high setup time THCLK+ 0.5 - ns
tsu(Data_NOE) Data to FSMC_NOEx high setup time THCLK+ 2.5 - ns
th(Data_NOE) Data hold time after FSMC_NOE high 0 - ns
th(Data_NE) Data hold time after FSMC_NEx high 0 - ns
tv(NADV_NE) FSMC_NEx low to FSMC_NADV low - 2.5 ns
tw(NADV) FSMC_NADV low time - THCLK– 0.5 ns
Data
FSMC_NE
FSMC_NBL[1:0]
FSMC_D[15:0]
tv(BL_NE)
t h(Data_NE)
FSMC_NOE
FSMC_A[25:0] Address
tv(A_NE)
FSMC_NWE
tsu(Data_NE)
tw(NE)
ai14991c
tv(NOE_NE) t w(NOE) t h(NE_NOE)
th(Data_NOE)
t h(A_NOE)
t h(BL_NOE)
tsu(Data_NOE)
FSMC_NADV(1)
t v(NADV_NE)
tw(NADV)
DocID15818 Rev 11 131/178
STM32F20xxx Electrical characteristics
177
Figure 57. Asynchronous non-multiplexed SRAM/PSRAM/NOR write waveforms
1. Mode 2/B, C and D only. In Mode 1, FSMC_NADV is not used.
1. CL = 30 pF.
2. Based on characterization, not tested in production.
Table 73. Asynchronous non-multiplexed SRAM/PSRAM/NOR write timings(1)(2)
Symbol Parameter Min Max Unit
tw(NE) FSMC_NE low time 3THCLK 3THCLK+ 4 ns
tv(NWE_NE) FSMC_NEx low to FSMC_NWE low THCLK– 0.5 THCLK+ 0.5 ns
tw(NWE) FSMC_NWE low time THCLK– 0.5 THCLK+ 3 ns
th(NE_NWE)
FSMC_NWE high to FSMC_NE high hold
time THCLK - ns
tv(A_NE) FSMC_NEx low to FSMC_A valid - 0 ns
th(A_NWE) Address hold time after FSMC_NWE high THCLK- 3 - ns
tv(BL_NE) FSMC_NEx low to FSMC_BL valid - 0.5 ns
th(BL_NWE)
FSMC_BL hold time after FSMC_NWE
high THCLK– 1 - ns
tv(Data_NE) Data to FSMC_NEx low to Data valid - THCLK+ 5 ns
th(Data_NWE) Data hold time after FSMC_NWE high THCLK+0.5 - ns
tv(NADV_NE) FSMC_NEx low to FSMC_NADV low - 2 ns
tw(NADV) FSMC_NADV low time - THCLK+ 1.5 ns
NBL
Data
FSMC_NEx
FSMC_NBL[1:0]
FSMC_D[15:0]
tv(BL_NE)
th(Data_NWE)
FSMC_NOE
FSMC_A[25:0] Address
tv(A_NE)
tw(NWE)
FSMC_NWE
tv(NWE_NE) t h(NE_NWE)
th(A_NWE)
th(BL_NWE)
tv(Data_NE)
tw(NE)
ai14990
FSMC_NADV(1)
t v(NADV_NE)
tw(NADV)
Electrical characteristics STM32F20xxx
132/178 DocID15818 Rev 11
Figure 58. Asynchronous multiplexed PSRAM/NOR read waveforms
1. CL = 30 pF.
2. Based on characterization, not tested in production.
Table 74. Asynchronous multiplexed PSRAM/NOR read timings(1)(2)
Symbol Parameter Min Max Unit
tw(NE) FSMC_NE low time 3THCLK-1 3THCLK+1 ns
tv(NOE_NE) FSMC_NEx low to FSMC_NOE low 2THCLK 2THCLK+0.5 ns
tw(NOE) FSMC_NOE low time THCLK-1 THCLK+1 ns
th(NE_NOE) FSMC_NOE high to FSMC_NE high hold time 0 - ns
tv(A_NE) FSMC_NEx low to FSMC_A valid - 2 ns
tv(NADV_NE) FSMC_NEx low to FSMC_NADV low 1 2.5 ns
tw(NADV) FSMC_NADV low time THCLK– 1.5 THCLK ns
th(AD_NADV)
FSMC_AD(adress) valid hold time after
FSMC_NADV high) THCLK - ns
th(A_NOE) Address hold time after FSMC_NOE high THCLK - ns
th(BL_NOE) FSMC_BL time after FSMC_NOE high 0 - ns
tv(BL_NE) FSMC_NEx low to FSMC_BL valid - 1 ns
tsu(Data_NE) Data to FSMC_NEx high setup time THCLK+ 2 - ns
NBL
Data
FSMC_NBL[1:0]
FSMC_AD[15:0]
tv(BL_NE)
th(Data_NE)
FSMC_A[25:16] Address
tv(A_NE)
FSMC_NWE
t v(A_NE)
ai14892b
Address
FSMC_NADV
t v(NADV_NE)
tw(NADV)
tsu(Data_NE)
th(AD_NADV)
FSMC_NE
FSMC_NOE
tw(NE)
t w(NOE)
tv(NOE_NE) t h(NE_NOE)
th(A_NOE)
th(BL_NOE)
tsu(Data_NOE) th(Data_NOE)
DocID15818 Rev 11 133/178
STM32F20xxx Electrical characteristics
177
tsu(Data_NOE) Data to FSMC_NOE high setup time THCLK+ 3 - ns
th(Data_NE) Data hold time after FSMC_NEx high 0 - ns
th(Data_NOE) Data hold time after FSMC_NOE high 0 - ns
1. CL = 30 pF.
2. Based on characterization, not tested in production.
Table 74. Asynchronous multiplexed PSRAM/NOR read timings(1)(2) (continued)
Symbol Parameter Min Max Unit
Electrical characteristics STM32F20xxx
134/178 DocID15818 Rev 11
Figure 59. Asynchronous multiplexed PSRAM/NOR write waveforms
Table 75. Asynchronous multiplexed PSRAM/NOR write timings(1)(2)
1. CL = 30 pF.
2. Based on characterization, not tested in production.
Symbol Parameter Min Max Unit
tw(NE) FSMC_NE low time 4THCLK-1 4THCLK+1 ns
tv(NWE_NE) FSMC_NEx low to FSMC_NWE low THCLK- 1 THCLK ns
tw(NWE) FSMC_NWE low tim e 2THCLK 2THCLK+1 ns
th(NE_NWE) FSMC_NWE high to FSMC_NE high hold time THCLK- 1 - ns
tv(A_NE) FSMC_NEx low to FSMC_A valid - 0 ns
tv(NADV_NE) FSMC_NEx low to FSMC_NADV low 1 2 ns
tw(NADV) FSMC_NADV low time THCLK– 2 THCLK+ 2 ns
th(AD_NADV)
FSMC_AD(adress) valid hold time after
FSMC_NADV high) THCLK - ns
th(A_NWE) Address hold time after FSMC_NWE high THCLK– 0.5 - ns
th(BL_NWE) FSMC_BL hold time after FSMC_NWE high THCLK- 1 - ns
tv(BL_NE) FSMC_NEx low to FSMC_BL valid - 0.5 ns
tv(Data_NADV) FSMC_NADV high to Data valid - THCLK+2 ns
th(Data_NWE) Data hold time after FSMC_NWE high THCLK– 0.5 - ns
NBL
Data
FSMC_NEx
FSMC_NBL[1:0]
FSMC_AD[15:0]
tv(BL_NE)
th(Data_NWE)
FSMC_NOE
FSMC_A[25:16] Address
tv(A_NE)
tw(NWE)
FSMC_NWE
tv(NWE_NE) t h(NE_NWE)
th(A_NWE)
th(BL_NWE)
t v(A_NE)
tw(NE)
ai14891B
Address
FSMC_NADV
t v(NADV_NE)
tw(NADV)
t v(Data_NADV)
th(AD_NADV)
DocID15818 Rev 11 135/178
STM32F20xxx Electrical characteristics
177
Synchronous waveforms and timings
Figure 60 through Figure 63 represent synchronous waveforms and Table 77 through
Table 79 provide the corresponding timings. The results shown in these tables are obtained
with the following FSMC configuration:
• BurstAccessMode = FSMC_BurstAccessMode_Enable;
• MemoryType = FSMC_MemoryType_CRAM;
• WriteBurst = FSMC_WriteBurst_Enable;
• CLKDivision = 1; (0 is not supported, see the STM32F20xxx/21xxx reference manual)
• DataLatency = 1 for NOR Flash; DataLatency = 0 for PSRAM
In all timing tables, the THCLK is the HCLK clock period.
Figure 60. Synchronous multiplexed NOR/PSRAM read timings
FSMC_CLK
FSMC_NEx
FSMC_NADV
FSMC_A[25:16]
FSMC_NOE
FSMC_AD[15:0] AD[15:0] D1 D2
FSMC_NWAIT
(WAITCFG = 1b, WAITPOL + 0b)
FSMC_NWAIT
(WAITCFG = 0b, WAITPOL + 0b)
tw(CLK) tw(CLK)
Data latency = 0
BUSTURN = 0
td(CLKL-NExL) td(CLKL-NExH)
td(CLKL-NADVL)
td(CLKL-AV)
td(CLKL-NADVH)
td(CLKL-AIV)
td(CLKH-NOEL) td(CLKL-NOEH)
td(CLKL-ADV)
td(CLKL-ADIV)
tsu(ADV-CLKH)
th(CLKH-ADV)
tsu(ADV-CLKH) th(CLKH-ADV)
tsu(NWAITV-CLKH) th(CLKH-NWAITV)
tsu(NWAITV-CLKH) th(CLKH-NWAITV)
tsu(NWAITV-CLKH) th(CLKH-NWAITV)
ai14893h
Electrical characteristics STM32F20xxx
136/178 DocID15818 Rev 11
Table 76. Synchronous multiplexed NOR/PSRAM read timings(1)(2)
1. CL = 30 pF.
2. Based on characterization, not tested in production.
Symbol Parameter Min Max Unit
tw(CLK) FSMC_CLK period 2THCLK - ns
td(CLKL-NExL) FSMC_CLK low to FSMC_NEx low (x=0..2) - 0 ns
td(CLKL-NExH) FSMC_CLK low to FSMC_NEx high (x= 0…2) 1 - ns
td(CLKL-NADVL) FSMC_CLK low to FSMC_NADV low - 1.5 ns
td(CLKL-NADVH) FSMC_CLK low to FSMC_NADV high 2.5 - ns
td(CLKL-AV) FSMC_CLK low to FSMC_Ax valid (x=16…25) - 0 ns
td(CLKL-AIV) FSMC_CLK low to FSMC_Ax invalid (x=16…25) 0 - ns
td(CLKH-NOEL) FSMC_CLK high to FSMC_NOE low - 1 ns
td(CLKL-NOEH) FSMC_CLK low to FSMC_NOE high 1 - ns
td(CLKL-ADV) FSMC_CLK low to FSMC_AD[15:0] valid - 3 ns
td(CLKL-ADIV) FSMC_CLK low to FSMC_AD[15:0] invalid 0 - ns
tsu(ADV-CLKH)
FSMC_A/D[15:0] valid data before FSMC_CLK
high 5 - ns
th(CLKH-ADV) FSMC_A/D[15:0] valid data after FSMC_CLK high 0 - ns
DocID15818 Rev 11 137/178
STM32F20xxx Electrical characteristics
177
Figure 61. Synchronous multiplexed PSRAM write timings
Table 77. Synchronous multiplexed PSRAM write timings(1)(2)
Symbol Parameter Min Max Unit
tw(CLK) FSMC_CLK period 2THCLK- 1 - ns
td(CLKL-NExL) FSMC_CLK low to FSMC_NEx low (x=0..2) - 0 ns
td(CLKL-NExH) FSMC_CLK low to FSMC_NEx high (x= 0…2) 2 - ns
td(CLKL-NADVL) FSMC_CLK low to FSMC_NADV low - 2 ns
td(CLKL-NADVH) FSMC_CLK low to FSMC_NADV high 3 - ns
td(CLKL-AV) FSMC_CLK low to FSMC_Ax valid (x=16…25) - 0 ns
td(CLKL-AIV) FSMC_CLK low to FSMC_Ax invalid (x=16…25) 7 - ns
td(CLKL-NWEL) FSMC_CLK low to FSMC_NWE low - 1 ns
td(CLKL-NWEH) FSMC_CLK low to FSMC_NWE high 0 - ns
td(CLKL-ADIV) FSMC_CLK low to FSMC_AD[15:0] invalid 0 - ns
td(CLKL-DATA) FSMC_A/D[15:0] valid data after FSMC_CLK low - 2 ns
td(CLKL-NBLH) FSMC_CLK low to FSMC_NBL high 0.5 - ns
FSMC_CLK
FSMC_NEx
FSMC_NADV
FSMC_A[25:16]
FSMC_NWE
FSMC_AD[15:0] AD[15:0] D1 D2
FSMC_NWAIT
(WAITCFG = 0b, WAITPOL + 0b)
tw(CLK) tw(CLK)
Data latency = 0
BUSTURN = 0
td(CLKL-NExL) td(CLKL-NExH)
td(CLKL-NADVL)
td(CLKL-AV)
td(CLKL-NADVH)
td(CLKL-AIV)
td(CLKL-NWEL) td(CLKL-NWEH)
td(CLKL-NBLH)
td(CLKL-ADV)
td(CLKL-ADIV) td(CLKL-Data)
tsu(NWAITV-CLKH) th(CLKH-NWAITV)
ai14992g
td(CLKL-Data)
FSMC_NBL
Electrical characteristics STM32F20xxx
138/178 DocID15818 Rev 11
Figure 62. Synchronous non-multiplexed NOR/PSRAM read timings
1. CL = 30 pF.
2. Based on characterization, not tested in production.
Table 78. Synchronous non-multiplexed NOR/PSRAM read timings(1)(2)
Symbol Parameter Min Max Unit
tw(CLK) FSMC_CLK period 2THCLK - ns
td(CLKL-NExL) FSMC_CLK low to FSMC_NEx low (x=0..2) - 0 ns
td(CLKL-NExH) FSMC_CLK low to FSMC_NEx high (x= 0…2) 1 - ns
td(CLKL-NADVL) FSMC_CLK low to FSMC_NADV low - 2.5 ns
td(CLKL-NADVH) FSMC_CLK low to FSMC_NADV high 4 - ns
td(CLKL-AV) FSMC_CLK low to FSMC_Ax valid (x=16…25) - 0 ns
td(CLKL-AIV) FSMC_CLK low to FSMC_Ax invalid (x=16…25) 3 - ns
td(CLKH-NOEL) FSMC_CLK high to FSMC_NOE low - 1 ns
td(CLKL-NOEH) FSMC_CLK low to FSMC_NOE high 1.5 - ns
tsu(DV-CLKH) FSMC_D[15:0] valid data before FSMC_CLK high 8 - ns
th(CLKH-DV) FSMC_D[15:0] valid data after FSMC_CLK high 0 - ns
FSMC_CLK
FSMC_NEx
FSMC_A[25:0]
FSMC_NOE
FSMC_D[15:0] D1 D2
FSMC_NWAIT
(WAITCFG = 1b, WAITPOL + 0b)
FSMC_NWAIT
(WAITCFG = 0b, WAITPOL + 0b)
tw(CLK) tw(CLK)
Data latency = 0
BUSTURN = 0
td(CLKL-NExL) td(CLKL-NExH)
td(CLKL-AV) td(CLKL-AIV)
td(CLKH-NOEL) td(CLKL-NOEH)
tsu(DV-CLKH) th(CLKH-DV)
tsu(DV-CLKH) th(CLKH-DV)
tsu(NWAITV-CLKH) th(CLKH-NWAITV)
tsu(NWAITV-CLKH) t h(CLKH-NWAITV)
tsu(NWAITV-CLKH) th(CLKH-NWAITV)
ai14894g
FSMC_NADV
td(CLKL-NADVL) td(CLKL-NADVH)
DocID15818 Rev 11 139/178
STM32F20xxx Electrical characteristics
177
Figure 63. Synchronous non-multiplexed PSRAM write timings
1. CL = 30 pF.
2. Based on characterization, not tested in production.
Table 79. Synchronous non-multiplexed PSRAM write timings(1)(2)
Symbol Parameter Min Max Unit
tw(CLK) FSMC_CLK period 2THCLK- 1 - ns
td(CLKL-NExL) FSMC_CLK low to FSMC_NEx low (x=0..2) - 1 ns
td(CLKL-NExH) FSMC_CLK low to FSMC_NEx high (x= 0…2) 1 - ns
td(CLKLNADVL)
FSMC_CLK low to FSMC_NADV low - 5 ns
td(CLKLNADVH)
FSMC_CLK low to FSMC_NADV high 6 - ns
td(CLKL-AV) FSMC_CLK low to FSMC_Ax valid (x=16…25) - 0 ns
td(CLKL-AIV) FSMC_CLK low to FSMC_Ax invalid (x=16…25) 8 - ns
td(CLKL-NWEL) FSMC_CLK low to FSMC_NWE low - 1 ns
td(CLKL-NWEH) FSMC_CLK low to FSMC_NWE high 1 - ns
FSMC_CLK
FSMC_NEx
FSMC_A[25:0]
FSMC_NWE
FSMC_D[15:0] D1 D2
FSMC_NWAIT
(WAITCFG = 0b, WAITPOL + 0b)
tw(CLK) tw(CLK)
Data latency = 0
BUSTURN = 0
td(CLKL-NExL) td(CLKL-NExH)
td(CLKL-AV) td(CLKL-AIV)
td(CLKL-NWEL) td(CLKL-NWEH)
td(CLKL-Data)
tsu(NWAITV-CLKH)
th(CLKH-NWAITV)
ai14993g
FSMC_NADV
td(CLKL-NADVL) td(CLKL-NADVH)
td(CLKL-Data)
FSMC_NBL
td(CLKL-NBLH)
Electrical characteristics STM32F20xxx
140/178 DocID15818 Rev 11
PC Card/CompactFlash controller waveforms and timings
Figure 64 through Figure 69 represent synchronous waveforms together with Table 80 and
Table 81 provides the corresponding timings. The results shown in this table are obtained
with the following FSMC configuration:
• COM.FSMC_SetupTime = 0x04;
• COM.FSMC_WaitSetupTime = 0x07;
• COM.FSMC_HoldSetupTime = 0x04;
• COM.FSMC_HiZSetupTime = 0x00;
• ATT.FSMC_SetupTime = 0x04;
• ATT.FSMC_WaitSetupTime = 0x07;
• ATT.FSMC_HoldSetupTime = 0x04;
• ATT.FSMC_HiZSetupTime = 0x00;
• IO.FSMC_SetupTime = 0x04;
• IO.FSMC_WaitSetupTime = 0x07;
• IO.FSMC_HoldSetupTime = 0x04;
• IO.FSMC_HiZSetupTime = 0x00;
• TCLRSetupTime = 0;
• TARSetupTime = 0;
In all timing tables, the THCLK is the HCLK clock period.
td(CLKL-Data) FSMC_D[15:0] valid data after FSMC_CLK low - 2 ns
td(CLKL-NBLH) FSMC_CLK low to FSMC_NBL high 2 - ns
1. CL = 30 pF.
2. Based on characterization, not tested in production.
Table 79. Synchronous non-multiplexed PSRAM write timings(1)(2) (continued)
Symbol Parameter Min Max Unit
DocID15818 Rev 11 141/178
STM32F20xxx Electrical characteristics
177
Figure 64. PC Card/CompactFlash controller waveforms for common memory read
access
1. FSMC_NCE4_2 remains high (inactive during 8-bit access.
Figure 65. PC Card/CompactFlash controller waveforms for common memory write
access
FSMC_NWE
tw(NOE)
FSMC_NOE
FSMC_D[15:0]
FSMC_A[10:0]
FSMC_NCE4_2(1)
FSMC_NCE4_1
FSMC_NREG
FSMC_NIOWR
FSMC_NIORD
td(NCE4_1-NOE)
tsu(D-NOE) th(NOE-D)
tv(NCEx-A)
td(NREG-NCEx)
td(NIORD-NCEx)
th(NCEx-AI)
th(NCEx-NREG)
th(NCEx-NIORD)
th(NCEx-NIOWR)
ai14895b
td(NCE4_1-NWE) tw(NWE)
th(NWE-D)
tv(NCE4_1-A)
td(NREG-NCE4_1)
td(NIORD-NCE4_1)
th(NCE4_1-AI)
MEMxHIZ =1
tv(NWE-D)
th(NCE4_1-NREG)
th(NCE4_1-NIORD)
th(NCE4_1-NIOWR)
ai14896b
FSMC_NWE
FSMC_NOE
FSMC_D[15:0]
FSMC_A[10:0]
FSMC_NCE4_1
FSMC_NREG
FSMC_NIOWR
FSMC_NIORD
td(NWE-NCE4_1)
td(D-NWE)
FSMC_NCE4_2 High
Electrical characteristics STM32F20xxx
142/178 DocID15818 Rev 11
Figure 66. PC Card/CompactFlash controller waveforms for attribute memory read
access
1. Only data bits 0...7 are read (bits 8...15 are disregarded).
td(NCE4_1-NOE) tw(NOE)
tsu(D-NOE) th(NOE-D)
tv(NCE4_1-A) th(NCE4_1-AI)
td(NREG-NCE4_1) th(NCE4_1-NREG)
ai14897b
FSMC_NWE
FSMC_NOE
FSMC_D[15:0](1)
FSMC_A[10:0]
FSMC_NCE4_2
FSMC_NCE4_1
FSMC_NREG
FSMC_NIOWR
FSMC_NIORD
td(NOE-NCE4_1)
High
DocID15818 Rev 11 143/178
STM32F20xxx Electrical characteristics
177
Figure 67. PC Card/CompactFlash controller waveforms for attribute memory write
access
1. Only data bits 0...7 are driven (bits 8...15 remains Hi-Z).
Figure 68. PC Card/CompactFlash controller waveforms for I/O space read access
tw(NWE)
tv(NCE4_1-A)
td(NREG-NCE4_1)
th(NCE4_1-AI)
th(NCE4_1-NREG)
tv(NWE-D)
ai14898b
FSMC_NWE
FSMC_NOE
FSMC_D[7:0](1)
FSMC_A[10:0]
FSMC_NCE4_2
FSMC_NCE4_1
FSMC_NREG
FSMC_NIOWR
FSMC_NIORD
td(NWE-NCE4_1)
High
td(NCE4_1-NWE)
td(NIORD-NCE4_1) tw(NIORD)
tsu(D-NIORD) td(NIORD-D)
tv(NCEx-A) th(NCE4_1-AI)
ai14899B
FSMC_NWE
FSMC_NOE
FSMC_D[15:0]
FSMC_A[10:0]
FSMC_NCE4_2
FSMC_NCE4_1
FSMC_NREG
FSMC_NIOWR
FSMC_NIORD
Electrical characteristics STM32F20xxx
144/178 DocID15818 Rev 11
Figure 69. PC Card/CompactFlash controller waveforms for I/O space write access
td(NCE4_1-NIOWR) tw(NIOWR)
tv(NCEx-A) th(NCE4_1-AI)
th(NIOWR-D)
ATTxHIZ =1
tv(NIOWR-D)
ai14900c
FSMC_NWE
FSMC_NOE
FSMC_D[15:0]
FSMC_A[10:0]
FSMC_NCE4_2
FSMC_NCE4_1
FSMC_NREG
FSMC_NIOWR
FSMC_NIORD
Table 80. Switching characteristics for PC Card/CF read and write cycles in
attribute/common space(1)(2)
Symbol Parameter Min Max Unit
tv(NCEx-A) FSMC_Ncex low to FSMC_Ay valid - 0 ns
th(NCEx_AI) FSMC_NCEx high to FSMC_Ax invalid 4 - ns
td(NREG-NCEx) FSMC_NCEx low to FSMC_NREG valid - 3.5 ns
th(NCEx-NREG) FSMC_NCEx high to FSMC_NREG invalid THCLK+ 4 - ns
td(NCEx-NWE) FSMC_NCEx low to FSMC_NWE low - 5THCLK+ 1 ns
td(NCEx-NOE) FSMC_NCEx low to FSMC_NOE low - 5THCLK ns
tw(NOE) FSMC_NOE low width 8THCLK– 0.5 8THCLK+ 1 ns
td(NOE_NCEx) FSMC_NOE high to FSMC_NCEx high 5THCLK+ 2.5 - ns
tsu (D-NOE) FSMC_D[15:0] valid data before FSMC_NOE high 4 - ns
th (N0E-D) FSMC_N0E high to FSMC_D[15:0] invalid 2 - ns
tw(NWE) FSMC_NWE low width 8THCLK- 1 8THCLK+ 4 ns
td(NWE_NCEx) FSMC_NWE high to FSMC_NCEx high 5THCLK+ 1.5 ns
td(NCEx-NWE) FSMC_NCEx low to FSMC_NWE low - 5HCLK+ 1 ns
tv (NWE-D) FSMC_NWE low to FSMC_D[15:0] valid - 0 ns
th (NWE-D) FSMC_NWE high to FSMC_D[15:0] invalid 8 THCLK - ns
td (D-NWE) FSMC_D[15:0] valid before FSMC_NWE high 13THCLK - ns
1. CL = 30 pF.
2. Based on characterization, not tested in production.
DocID15818 Rev 11 145/178
STM32F20xxx Electrical characteristics
177
NAND controller waveforms and timings
Figure 70 through Figure 73 represent synchronous waveforms, together with Table 82 and
Table 83 provides the corresponding timings. The results shown in this table are obtained
with the following FSMC configuration:
• COM.FSMC_SetupTime = 0x01;
• COM.FSMC_WaitSetupTime = 0x03;
• COM.FSMC_HoldSetupTime = 0x02;
• COM.FSMC_HiZSetupTime = 0x01;
• ATT.FSMC_SetupTime = 0x01;
• ATT.FSMC_WaitSetupTime = 0x03;
• ATT.FSMC_HoldSetupTime = 0x02;
• ATT.FSMC_HiZSetupTime = 0x01;
• Bank = FSMC_Bank_NAND;
• MemoryDataWidth = FSMC_MemoryDataWidth_16b;
• ECC = FSMC_ECC_Enable;
• ECCPageSize = FSMC_ECCPageSize_512Bytes;
• TCLRSetupTime = 0;
• TARSetupTime = 0;
In all timing tables, the THCLK is the HCLK clock period.
Table 81. Switching characteristics for PC Card/CF read and write cycles in I/O space(1)(2)
Symbol Parameter Min Max Unit
tw(NIOWR) FSMC_NIOWR low width 8THCLK - 0.5 - ns
tv(NIOWR-D) FSMC_NIOWR low to FSMC_D[15:0] valid - 5THCLK- 1 ns
th(NIOWR-D) FSMC_NIOWR high to FSMC_D[15:0] invalid 8THCLK- 3 - ns
td(NCE4_1-NIOWR) FSMC_NCE4_1 low to FSMC_NIOWR valid - 5THCLK+ 1.5 ns
th(NCEx-NIOWR) FSMC_NCEx high to FSMC_NIOWR invalid 5THCLK - ns
td(NIORD-NCEx) FSMC_NCEx low to FSMC_NIORD valid - 5THCLK+ 1 ns
th(NCEx-NIORD) FSMC_NCEx high to FSMC_NIORD) valid 5THCLK– 0.5 - ns
tw(NIORD) FSMC_NIORD low width 8THCLK+ 1 - ns
tsu(D-NIORD)
FSMC_D[15:0] valid before FSMC_NIORD
high 9.5 ns
td(NIORD-D) FSMC_D[15:0] valid after FSMC_NIORD high 0 ns
1. CL = 30 pF.
2. Based on characterization, not tested in production.
Electrical characteristics STM32F20xxx
146/178 DocID15818 Rev 11
Figure 70. NAND controller waveforms for read access
Figure 71. NAND controller waveforms for write access
FSMC_NWE
FSMC_NOE (NRE)
FSMC_D[15:0]
tsu(D-NOE) th(NOE-D)
ai14901c
ALE (FSMC_A17)
CLE (FSMC_A16)
FSMC_NCEx
td(ALE-NOE) th(NOE-ALE)
tv(NWE-D) th(NWE-D)
ai14902c
FSMC_NWE
FSMC_NOE (NRE)
FSMC_D[15:0]
ALE (FSMC_A17)
CLE (FSMC_A16)
FSMC_NCEx
td(ALE-NWE) th(NWE-ALE)
DocID15818 Rev 11 147/178
STM32F20xxx Electrical characteristics
177
Figure 72. NAND controller waveforms for common memory read access
Figure 73. NAND controller waveforms for common memory write access
Table 82. Switching characteristics for NAND Flash read cycles(1)(2)
1. CL = 30 pF.
2. Based on characterization, not tested in production.
Symbol Parameter Min Max Unit
tw(N0E) FSMC_NOE low width 4THCLK- 1 4THCLK+ 2 ns
tsu(D-NOE)
FSMC_D[15-0] valid data before FSMC_NOE
high 9 - ns
th(NOE-D) FSMC_D[15-0] valid data after FSMC_NOE high 3 - ns
td(ALE-NOE) FSMC_ALE valid before FSMC_NOE low - 3THCLK ns
th(NOE-ALE) FSMC_NWE high to FSMC_ALE invalid 3THCLK+ 2 - ns
FSMC_NWE
FSMC_NOE
FSMC_D[15:0]
tw(NOE)
tsu(D-NOE) th(NOE-D)
ai14912c
ALE (FSMC_A17)
CLE (FSMC_A16)
FSMC_NCEx
td(ALE-NOE) th(NOE-ALE)
tw(NWE)
tv(NWE-D) th(NWE-D)
ai14913c
FSMC_NWE
FSMC_NOE
FSMC_D[15:0]
td(D-NWE)
ALE (FSMC_A17)
CLE (FSMC_A16)
FSMC_NCEx
td(ALE-NOE) th(NOE-ALE)
Electrical characteristics STM32F20xxx
148/178 DocID15818 Rev 11
6.3.26 Camera interface (DCMI) timing specifications
6.3.27 SD/SDIO MMC card host interface (SDIO) characteristics
Unless otherwise specified, the parameters given in Table 85 are derived from tests
performed under ambient temperature, fPCLKx frequency and VDD supply voltage conditions
summarized in Table 14.
Refer to Section 6.3.16: I/O port characteristics for more details on the input/output alternate
function characteristics (D[7:0], CMD, CK).
Figure 74. SDIO high-speed mode
Table 83. Switching characteristics for NAND Flash write cycles(1)(2)
1. CL = 30 pF.
2. Based on characterization, not tested in production.
Symbol Parameter Min Max Unit
tw(NWE) FSMC_NWE low width 4THCLK- 1 4THCLK+ 3 ns
tv(NWE-D) FSMC_NWE low to FSMC_D[15-0] valid - 0 ns
th(NWE-D) FSMC_NWE high to FSMC_D[15-0] invalid 3THCLK - ns
td(D-NWE) FSMC_D[15-0] valid before FSMC_NWE high 5THCLK - ns
td(ALE-NWE) FSMC_ALE valid before FSMC_NWE low - 3THCLK+ 2 ns
th(NWE-ALE) FSMC_NWE high to FSMC_ALE invalid 3THCLK- 2 - ns
Table 84. DCMI characteristics
Symbol Parameter Conditions Min Max
- Frequency ratio
DCMI_PIXCLK/fHCLK
DCMI_PIXCLK= 48 MHz 0.4
tW(CKH)
CK
D, CMD
(output)
D, CMD
(input)
tC
tW(CKL)
tOV tOH
tISU tIH
tf tr
ai14887
DocID15818 Rev 11 149/178
STM32F20xxx Electrical characteristics
177
Figure 75. SD default mode
6.3.28 RTC characteristics
Table 85. SD / MMC characteristics
Symbol Parameter Conditions Min Max Unit
fPP
Clock frequency in data transfer
mode CL ≤ 30 pF 0 48 MHz
- SDIO_CK/fPCLK2 frequency ratio - - 8/3 -
tW(CKL) Clock low time, fPP = 16 MHz CL ≤ 30 pF 32
ns
tW(CKH) Clock high time, fPP = 16 MHz CL ≤ 30 pF 31
tr Clock rise time CL ≤ 30 pF 3.5
tf Clock fall time CL ≤ 30 pF 5
CMD, D inputs (referenced to CK)
tISU Input setup time CL ≤ 30 pF 2
ns
tIH Input hold time CL ≤ 30 pF 0
CMD, D outputs (referenced to CK) in MMC and SD HS mode
tOV Output valid time CL ≤ 30 pF 6
ns
tOH Output hold time CL ≤ 30 pF 0.3
CMD, D outputs (referenced to CK) in SD default mode(1)
1. Refer to SDIO_CLKCR, the SDI clock control register to control the CK output.
tOVD Output valid default time CL ≤ 30 pF 7
ns
tOHD Output hold default time CL ≤ 30 pF 0.5
ai14888
CK
D, CMD
(output)
tOVD tOHD
Table 86. RTC characteristics
Symbol Parameter Conditions Min Max
- fPCLK1/RTCCLK frequency ratio Any read/write operation
from/to an RTC register 4 -
Package characteristics STM32F20xxx
150/178 DocID15818 Rev 11
7 Package characteristics
7.1 Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
DocID15818 Rev 11 151/178
STM32F20xxx Package characteristics
177
Figure 76. LQFP64 – 10 x 10 mm 64 pin low-profile quad flat package outline
1. Drawing is not to scale.
A1
A2
A
SEATING
PLANE
ccc C
b
C
c
A1
L
L1
K
GAUGE PLANE
0.25 mm
IDENTIFICATION
PIN 1
D
D1
D3
e
1 16
17
32
48 33
49
64 E3
E1
E
5W_ME_V2
Table 87. LQFP64 – 10 x 10 mm 64 pin low-profile quad flat package mechanical data
Symbol
millimeters inches(1)
Min Typ Max Min Typ Max
A - - 1.600 - - 0.0630
A1 0.050 - 0.150 0.0020 - 0.0059
A2 1.350 1.400 1.450 0.0531 0.0551 0.0571
b 0.170 0.220 0.270 0.0067 0.0087 0.0106
c 0.090 - 0.200 0.0035 - 0.0079
D 11.800 12.000 12.200 0.4646 0.4724 0.4803
D1 9.800 10.000 10.200 0.3937 0.3937 0.4016
D3 - 7.500 - - 0.2953 -
Package characteristics STM32F20xxx
152/178 DocID15818 Rev 11
Figure 77. Recommended footprint
1. Drawing is not to scale.
2. Dimensions are in millimeters.
E 11.800 12.000 12.200 0.4646 0.4724 0.4803
E1 9.800 10.000 10.200 0.3937 0.3937 0.4016
E3 - 7.500 - - 0.2953 -
e - 0.500 - - 0.0197 -
K 0° 3.5° 7° 0° 3.5° 7°
L 0.450 0.600 0.750 0.0177 0.0236 0.0295
L1 - 1.000 - - 0.0394 -
ccc - - 0.080 - - 0.0031
1. Values in inches are converted from mm and rounded to 4 decimal digits.
Table 87. LQFP64 – 10 x 10 mm 64 pin low-profile quad flat package mechanical data (continued)
Symbol
millimeters inches(1)
Min Typ Max Min Typ Max
48
49 32
64 17
1 16
1.2
0.3
33
10.3
12.7
10.3
0.5
7.8
12.7
ai14909c
DocID15818 Rev 11 153/178
STM32F20xxx Package characteristics
177
Figure 78. WLCSP64+2 - 0.400 mm pitch wafer level chip size package outline
1. Drawing is not to scale.
Side view Bump side
Detail A
Wafer back side
A1 ball location
A1
Detail A
rotated by 90 °C
eee
D
A0FX_ME
Seating plane
A2
A
b
E
e
e1
e
G
F
e1
Table 88. WLCSP64+2 - 0.400 mm pitch wafer level chip size package mechanical data
Symbol
millimeters inches
Min Typ Max Min Typ Max
A 0.520 0.570 0.600 0.0205 0.0224 0.0236
A1 0.170 0.190 0.210 0.0067 0.0075 0.0083
A2 0.350 0.380 0.410 0.0138 0.0150 0.0161
b 0.245 0.270 0.295 0.0096 0.0106 0.0116
D 3.619 3.639 3.659 0.1425 0.1433 0.1441
E 3.951 3.971 3.991 0.1556 0.1563 0.1571
e - 0.400 - - 0.0157 -
e1 - 3.218 - - 0.1267 -
F - 0.220 - - 0.0087 -
Package characteristics STM32F20xxx
154/178 DocID15818 Rev 11
G - 0.386 - - 0.0152 -
eee - - 0.050 - - 0.0020
Table 88. WLCSP64+2 - 0.400 mm pitch wafer level chip size package mechanical data (continued)
Symbol
millimeters inches
Min Typ Max Min Typ Max
DocID15818 Rev 11 155/178
STM32F20xxx Package characteristics
177
Figure 79. LQFP100, 14 x 14 mm 100-pin low-profile quad flat package outline
1. Drawing is not to scale.
IDENTIFICATION e
PIN 1
GAUGE PLANE
0.25 mm
SEATING
PLANE
D
D1
D3
E3
E1
E
K
ccc C
C
1 25
100 26
76
75 51
50
1L_ME_V4
A2
A
A1
L1
L
c
b
A1
Table 89. LQPF100 – 14 x 14 mm 100-pin low-profile quad flat package mechanical data
Symbol
millimeters inches(1)
Min Typ Max Min Typ Max
A - - 1.600 - - 0.0630
A1 0.050 - 0.150 0.0020 - 0.0059
A2 1.350 1.400 1.450 0.0531 0.0551 0.0571
b 0.170 0.220 0.270 0.0067 0.0087 0.0106
c 0.090 - 0.200 0.0035 - 0.0079
D 15.800 16.000 16.200 0.6220 0.6299 0.6378
D1 13.800 14.000 14.200 0.5433 0.5512 0.5591
D3 - 12.000 - - 0.4724 -
E 15.800 16.000 16.200 0.6220 0.6299 0.6378
E1 13.800 14.000 14.200 0.5433 0.5512 0.5591
Package characteristics STM32F20xxx
156/178 DocID15818 Rev 11
Figure 80. Recommended footprint
1. Drawing is not to scale.
2. Dimensions are in millimeters.
E3 - 12.000 - - 0.4724 -
e - 0.500 - - 0.0197 -
L 0.450 0.600 0.750 0.0177 0.0236 0.0295
L1 - 1.000 - - 0.0394 -
k 0° 3.5° 7° 0° 3.5° 7°
ccc - - 0.080 - - 0.0031
1. Values in inches are converted from mm and rounded to 4 decimal digits.
Table 89. LQPF100 – 14 x 14 mm 100-pin low-profile quad flat package mechanical data
Symbol
millimeters inches(1)
Min Typ Max Min Typ Max
75 51
76 50
0.5
0.3
16.7 14.3
100 26
12.3
25
1.2
16.7
1
ai14906
DocID15818 Rev 11 157/178
STM32F20xxx Package characteristics
177
Figure 81. LQFP144, 20 x 20 mm, 144-pin low-profile quad
flat package outline
1. Drawing is not to scale.
e
IDENTIFICATION
PIN 1
GAUGE PLANE
0.25 mm
SEATING
PLANE
D
D1
D3
E3
E1
E
K
ccc C
C
1 36
37
144
109
108 73
72
1A_ME_V3
A2
A
A1
L1
L
c
b
A1
Table 90. LQFP144 20 x 20 mm, 144-pin low-profile quad flat package mechanical data
Symbol
millimeters inches(1)
Min Typ Max Min Typ Max
A - - 1.600 - - 0.0630
A1 0.050 - 0.150 0.0020 - 0.0059
A2 1.350 1.400 1.450 0.0531 0.0551 0.0571
b 0.170 0.220 0.270 0.0067 0.0087 0.0106
c 0.090 - 0.200 0.0035 - 0.0079
D 21.800 22.000 22.200 0.8583 0.8661 0.874
D1 19.800 20.000 20.200 0.7795 0.7874 0.7953
D3 - 17.500 - - 0.689 -
E 21.800 22.000 22.200 0.8583 0.8661 0.8740
Package characteristics STM32F20xxx
158/178 DocID15818 Rev 11
Figure 82. Recommended footprint
1. Drawing is not to scale.
2. Dimensions are in millimeters.
E1 19.800 20.000 20.200 0.7795 0.7874 0.7953
E3 - 17.500 - - 0.6890 -
e - 0.500 - - 0.0197 -
L 0.450 0.600 0.750 0.0177 0.0236 0.0295
L1 - 1.000 - - 0.0394 -
k 0° 3.5° 7° 0° 3.5° 7°
ccc - - 0.080 - - 0.0031
1. Values in inches are converted from mm and rounded to 4 decimal digits.
Table 90. LQFP144 20 x 20 mm, 144-pin low-profile quad flat package mechanical data (continued)
Symbol
millimeters inches(1)
Min Typ Max Min Typ Max
ai14905c
0.5
0.35
19.9
17.85
22.6
1.35
22.6
19.9
1 36
37
72
108 73
109
144
DocID15818 Rev 11 159/178
STM32F20xxx Package characteristics
177
Figure 83. LQFP176 - Low profile quad flat package 24 × 24 × 1.4 mm, package outline
1. Drawing is not to scale.
Table 91. LQFP176 - Low profile quad flat package 24 × 24 × 1.4 mm
package mechanical data
Symbol
millimeters inches(1)
Min Typ Max Min Typ Max
A - - 1.600 - - 0.0630
A1 0.050 - 0.150 0.0020 - 0.0059
A2 1.350 - 1.450 0.0531 - 0.0571
b 0.170 - 0.270 0.0067 - 0.0106
c 0.090 - 0.200 0.0035 - 0.0079
D 23.900 - 24.100 0.9409 - 0.9488
E 23.900 - 24.100 0.9409 - 0.9488
e - 0.500 - - 0.0197 -
HD 25.900 - 26.100 1.0197 - 1.0276
1T_ME_V2
A2
A
e
E HE
D
HD
ZD
ZE
b
0.25 mm
gauge plane
A1
L
L1
k
c
IDENTIFICATION
PIN 1
C Seating plane
A1
Package characteristics STM32F20xxx
160/178 DocID15818 Rev 11
HE 25.900 26.100 1.0197 1.0276
L(2) 0.450 0.750 0.0177 0.0295
L1 1.000 0.0394
ZD 1.250 0.0492
ZE 1.250 0.0492
k 0° 7° 0° 7°
ccc 0.080 0.0031
1. Values in inches are converted from mm and rounded to 4 decimal digits.
2. L dimension is measured at gauge plane at 0.25 mm above the seating plane.
Table 91. LQFP176 - Low profile quad flat package 24 × 24 × 1.4 mm
package mechanical data (continued)
Symbol
millimeters inches(1)
Min Typ Max Min Typ Max
DocID15818 Rev 11 161/178
STM32F20xxx Package characteristics
177
Figure 84. LQFP176 recommended footprint
1. Dimensions are expressed in millimeters.
1T_FP_V1
133
132
1.2
0.3
0.5
89
88
1.2
44
45
21.8
26.7
1
176
26.7
21.8
Package characteristics STM32F20xxx
162/178 DocID15818 Rev 11
Figure 85. UFBGA176+25 - ultra thin fine pitch ball grid array 10 × 10 × 0.6 mm,
package outline
1. Drawing is not to scale.
A0E7_ME_V5
Seating plane
A2 ddd C
A1 A
e F
F
e
R
A
15 1
BOTTOM VIEW
E
D
TOP VIEW
Øb (176 + 25 balls)
B
A
Ø eee M B
Ø fff M
C
C
A
C
A1 ball
identifier
A1 ball
index area
b
Table 92. UFBGA176+25 - ultra thin fine pitch ball grid array 10 × 10 × 0.6 mm mechanical data
Symbol
millimeters inches(1)
Min Typ Max Min Typ Max
A 0.460 0.530 0.600 0.0181 0.0209 0.0236
A1 0.050 0.080 0.110 0.002 0.0031 0.0043
A2 0.400 0.450 0.500 0.0157 0.0177 0.0197
b 0.230 0.280 0.330 0.0091 0.0110 0.0130
D 9.950 10.000 10.050 0.3917 0.3937 0.3957
E 9.950 10.000 10.050 0.3917 0.3937 0.3957
e - 0.650 - - 0.0256 -
F 0.400 0.450 0.500 0.0157 0.0177 0.0197
ddd - - 0.080 - - 0.0031
eee - - 0.150 - - 0.0059
fff - - 0.080 - - 0.0031
1. Values in inches are converted from mm and rounded to 4 decimal digits.
DocID15818 Rev 11 163/178
STM32F20xxx Package characteristics
177
7.2 Thermal characteristics
The maximum chip-junction temperature, TJ max, in degrees Celsius, may be calculated
using the following equation:
TJ max = TA max + (PD max x ΘJA)
Where:
• TA max is the maximum ambient temperature in °C,
• ΘJA is the package junction-to-ambient thermal resistance, in °C/W,
• PD max is the sum of PINT max and PI/O max (PD max = PINT max + PI/Omax),
• PINT max is the product of IDD and VDD, expressed in Watts. This is the maximum chip
internal power.
PI/O max represents the maximum power dissipation on output pins where:
PI/O max = Σ (VOL × IOL) + Σ((VDD – VOH) × IOH),
taking into account the actual VOL / IOL and VOH / IOH of the I/Os at low and high level in the
application.
Reference document
JESD51-2 Integrated Circuits Thermal Test Method Environment Conditions - Natural
Convection (Still Air). Available from www.jedec.org.
Table 93. Package thermal characteristics
Symbol Parameter Value Unit
ΘJA
Thermal resistance junction-ambient
LQFP 64 - 10 × 10 mm / 0.5 mm pitch 45
°C/W
Thermal resistance junction-ambient
WLCSP64+2 - 0.400 mm pitch 51
Thermal resistance junction-ambient
LQFP100 - 14 × 14 mm / 0.5 mm pitch 46
Thermal resistance junction-ambient
LQFP144 - 20 × 20 mm / 0.5 mm pitch 40
Thermal resistance junction-ambient
LQFP176 - 24 × 24 mm / 0.5 mm pitch 38
Thermal resistance junction-ambient
UFBGA176 - 10× 10 mm / 0.5 mm pitch 39
Part numbering STM32F20xxx
164/178 DocID15818 Rev 11
8 Part numbering
For a list of available options (speed, package, etc.) or for further information on any aspect
of this device, please contact your nearest ST sales office.
Table 94. Ordering information scheme
Example: STM32 F 205 R E T 6 Vxxx
Device family
STM32 = ARM-based 32-bit microcontroller
Product type
F = general-purpose
Device subfamily
205 = STM32F20x, connectivity
207= STM32F20x, connectivity, camera interface,
Ethernet
Pin count
R = 64 pins or 66 pins(1)
V = 100 pins
Z = 144 pins
I = 176 pins
Flash memory size
B = 128 Kbytes of Flash memory
C = 256 Kbytes of Flash memory
E = 512 Kbytes of Flash memory
F = 768 Kbytes of Flash memory
G = 1024 Kbytes of Flash memory
Package
T = LQFP
H = UFBGA
Y = WLCSP
Temperature range
6 = Industrial temperature range, –40 to 85 °C.
7 = Industrial temperature range, –40 to 105 °C.
Software option
Internal code or Blank
Options
xxx = programmed parts
TR = tape and reel
1. The 66 pins is available on WLCSP package only.
DocID15818 Rev 11 165/178
STM32F20xxx Revision history
177
9 Revision history
Table 95. Document revision history
Date Revision Changes
05-Jun-2009 1 Initial release.
09-Oct-2009 2
Document status promoted from Target specification to Preliminary
data.
In Table 8: STM32F20x pin and ball definitions:
– Note 4 updated
– VDD_SA and VDD_3 pins inverted (Figure 12: STM32F20x LQFP100
pinout, Figure 13: STM32F20x LQFP144 pinout and Figure 14:
STM32F20x LQFP176 pinout corrected accordingly).
Section 7.1: Package mechanical data changed to LQFP with no
exposed pad.
01-Feb-2010 3
LFBGA144 package removed. STM32F203xx part numbers removed.
Part numbers with 128 and 256 Kbyte Flash densities added.
Encryption features removed.
PC13-TAMPER-RTC renamed to PC13-RTC_AF1 and PI8-TAMPERRTC
renamed to PI8-RTC_AF2.
13-Jul-2010 4
Renamed high-speed SRAM, system SRAM.
Removed combination: 128 KBytes Flash memory in LQFP144.
Added UFBGA176 package. Added note 1 related to LQFP176
package in Table 2, Figure 14, and Table 94.
Added information on ART accelerator and audio PLL (PLLI2S).
Added Table 6: USART feature comparison.
Several updates on Table 8: STM32F20x pin and ball definitions and
Table 10: Alternate function mapping. ADC, DAC, oscillator, RTC_AF,
WKUP and VBUS signals removed from alternate functions and
moved to the “other functions” column in Table 8: STM32F20x pin and
ball definitions.
TRACESWO added in Figure 4: STM32F20x block diagram, Table 8:
STM32F20x pin and ball definitions, and Table 10: Alternate function
mapping.
XTAL oscillator frequency updated on cover page, in Figure 4:
STM32F20x block diagram and in Section 3.11: External
interrupt/event controller (EXTI).
Updated list of peripherals used for boot mode in Section 3.13: Boot
modes.
Added Regulator bypass mode in Section 3.16: Voltage regulator, and
Section 6.3.4: Operating conditions at power-up / power-down
(regulator OFF).
Updated Section 3.17: Real-time clock (RTC), backup SRAM and
backup registers.
Added Note Note: in Section 3.18: Low-power modes.
Added SPI TI protocol in Section 3.23: Serial peripheral interface
(SPI).
Revision history STM32F20xxx
166/178 DocID15818 Rev 11
13-Jul-2010 4
(continued)
Added USB OTG_FS features in Section 3.28: Universal serial bus onthe-
go full-speed (OTG_FS).
Updated VCAP_1 and VCAP_2 capacitor value to 2.2 μF in Figure 19:
Power supply scheme.
Removed DAC, modified ADC limitations, and updated I/O
compensation for 1.8 to 2.1 V range in Table 15: Limitations depending
on the operating power supply range.
Added VBORL, VBORM, VBORH and IRUSH in Table 19: Embedded reset
and power control block characteristics.
Removed table Typical current consumption in Sleep mode with Flash
memory in Deep power down mode. Merged typical and maximum
current consumption sections and added Table 21: Typical and
maximum current consumption in Run mode, code with data
processing running from Flash memory (ART accelerator disabled),
Table 20: Typical and maximum current consumption in Run mode,
code with data processing running from Flash memory (ART
accelerator enabled) or RAM, Table 22: Typical and maximum current
consumption in Sleep mode, Table 23: Typical and maximum current
consumptions in Stop mode, Table 24: Typical and maximum current
consumptions in Standby mode, and Table 25: Typical and maximum
current consumptions in VBAT mode.
Update Table 34: Main PLL characteristics and added Section 6.3.11:
PLL spread spectrum clock generation (SSCG) characteristics.
Added Note 8 for CIO in Table 48: I/O AC characteristics.
Updated Section 6.3.18: TIM timer characteristics.
Added TNRST_OUT in Table 49: NRST pin characteristics.
Updated Table 52: I2C characteristics.
Removed 8-bit data in and data out waveforms from Figure 47: ULPI
timing diagram.
Removed note related to ADC calibration in Table 67. Section 6.3.20:
12-bit ADC characteristics: ADC characteristics tables merged into one
single table; tables ADC conversion time and ADC accuracy removed.
Updated Table 68: DAC characteristics.
Updated Section 6.3.22: Temperature sensor characteristics and
Section 6.3.23: VBAT monitoring characteristics.
Update Section 6.3.26: Camera interface (DCMI) timing specifications.
Added Section 6.3.27: SD/SDIO MMC card host interface (SDIO)
characteristics, and Section 6.3.28: RTC characteristics.
Added Section 7.2: Thermal characteristics. Updated Table 91:
LQFP176 - Low profile quad flat package 24 × 24 × 1.4 mm package
mechanical data and Figure 83: LQFP176 - Low profile quad flat
package 24 × 24 × 1.4 mm, package outline.
Changed tape and reel code to TX in Table 94: Ordering information
scheme.
Added Table 101: Main applications versus package for STM32F2xxx
microcontrollers. Updated figures in Appendix A.2: USB OTG full
speed (FS) interface solutions and A.3: USB OTG high speed (HS)
interface solutions. Updated Figure 94: Audio player solution using
PLL, PLLI2S, USB and 1 crystal and Figure 95: Audio PLL (PLLI2S)
providing accurate I2S clock.
Table 95. Document revision history (continued)
Date Revision Changes
DocID15818 Rev 11 167/178
STM32F20xxx Revision history
177
25-Nov-2010 5
Update I/Os in Section : Features.
Added WLCSP64+2 package. Added note 1 related to LQFP176 on
cover page.
Added trademark for ART accelerator. Updated Section 3.2:
Adaptive real-time memory accelerator (ART Accelerator™).
Updated Figure 5: Multi-AHB matrix.
Added case of BOR inactivation using IRROFF on WLCSP devices in
Section 3.15: Power supply supervisor.
Reworked Section 3.16: Voltage regulator to clarify regulator off
modes. Renamed PDROFF, IRROFF in the whole document.
Added Section 3.19: VBAT operation.
Updated LIN and IrDA features for UART4/5 in Table 6: USART
feature comparison.
Table 8: STM32F20x pin and ball definitions: Modified VDD_3 pin, and
added note related to the FSMC_NL pin; renamed BYPASS-REG
REGOFF, and add IRROFF pin; renamed USART4/5 UART4/5.
USART4 pins renamed UART4.
Changed VSS_SA to VSS, and VDD_SA pin reserved for future use.
Updated maximum HSE crystal frequency to 26 MHz.
Section 6.2: Absolute maximum ratings: Updated VIN minimum and
maximum values and note related to five-volt tolerant inputs in
Table 11: Voltage characteristics. Updated IINJ(PIN) maximum values
and related notes in Table 12: Current characteristics.
Updated VDDA minimum value in Table 14: General operating
conditions.
Added Note 2 and updated Maximum CPU frequency in Table 15:
Limitations depending on the operating power supply range, and
added Figure 21: Number of wait states versus fCPU and VDD range.
Added brownout level 1, 2, and 3 thresholds in Table 19: Embedded
reset and power control block characteristics.
Changed fOSC_IN maximum value in Table 30: HSE 4-26 MHz
oscillator characteristics.
Changed fPLL_IN maximum value in Table 34: Main PLL
characteristics, and updated jitter parameters in Table 35: PLLI2S
(audio PLL) characteristics.
Section 6.3.16: I/O port characteristics: updated VIH and VIL in
Table 48: I/O AC characteristics.
Added Note 1 below Table 47: Output voltage characteristics.
Updated RPD and RPU parameter description in Table 57: USB OTG
FS DC electrical characteristics.
Updated VREF+ minimum value in Table 66: ADC characteristics.
Updated Table 71: Embedded internal reference voltage.
Removed Ethernet and USB2 for 64-pin devices in Table 101: Main
applications versus package for STM32F2xxx microcontrollers.
Added A.2: USB OTG full speed (FS) interface solutions, removed
“OTG FS connection with external PHY” figure, updated Figure 87,
Figure 88, and Figure 90 to add STULPI01B.
Table 95. Document revision history (continued)
Date Revision Changes
Revision history STM32F20xxx
168/178 DocID15818 Rev 11
22-Apr-2011 6
Changed datasheet status to “Full Datasheet”.
Introduced concept of SRAM1 and SRAM2.
LQFP176 package now in production and offered only for 256 Kbyte
and 1 Mbyte devices. Availability of WLCSP64+2 package limited to
512 Kbyte and 1 Mbyte devices.
Updated Figure 3: Compatible board design between STM32F10xx
and STM32F2xx for LQFP144 package and Figure 2: Compatible
board design between STM32F10xx and STM32F2xx for LQFP100
package.
Added camera interface for STM32F207Vx devices in Table 2:
STM32F205xx features and peripheral counts.
Removed 16 MHz internal RC oscillator accuracy in Section 3.12:
Clocks and startup.
Updated Section 3.16: Voltage regulator.
Modified I2S sampling frequency range in Section 3.12: Clocks and
startup, Section 3.24: Inter-integrated sound (I2S), and Section 3.30:
Audio PLL (PLLI2S).
Updated Section 3.17: Real-time clock (RTC), backup SRAM and
backup registers and description of TIM2 and TIM5 in Section 3.20.2:
General-purpose timers (TIMx).
Modified maximum baud rate (oversampling by 16) for USART1 in
Table 6: USART feature comparison.
Updated note related to RFU pin below Figure 12: STM32F20x
LQFP100 pinout, Figure 13: STM32F20x LQFP144 pinout, Figure 14:
STM32F20x LQFP176 pinout, Figure 15: STM32F20x UFBGA176
ballout, and Table 8: STM32F20x pin and ball definitions.
In Table 8: STM32F20x pin and ball definitions,:changed I2S2_CK and
I2S3_CK to I2S2_SCK and I2S3_SCK, respectively; added PA15 and
TT (3.6 V tolerant I/O).
Added RTC_50Hz as PB15 alternate function in Table 8: STM32F20x
pin and ball definitions and Table 10: Alternate function mapping.
Removed ETH _RMII_TX_CLK for PC3/AF11 in Table 10: Alternate
function mapping.
Updated Table 11: Voltage characteristics and Table 12: Current
characteristics.
TSTG updated to –65 to +150 in Table 13: Thermal characteristics.
Added CEXT, ESL, and ESR in Table 14: General operating conditions
as well as Section 6.3.2: VCAP1/VCAP2 external capacitor.
Modified Note 4 in Table 15: Limitations depending on the operating
power supply range.
Updated Table 17: Operating conditions at power-up / power-down
(regulator ON), and Table 18: Operating conditions at power-up /
power-down (regulator OFF).
Added OSC_OUT pin in Figure 17: Pin loading conditions. and
Figure 18: Pin input voltage.
Updated Figure 19: Power supply scheme to add IRROFF and
REGOFF pins and modified notes.
Updated VPVD, VBOR1, VBOR2, VBOR3, TRSTTEMPO typical value, and
IRUSH, added ERUSH and Note 2 in Table 19: Embedded reset and
power control block characteristics.
Table 95. Document revision history (continued)
Date Revision Changes
DocID15818 Rev 11 169/178
STM32F20xxx Revision history
177
22-Apr-2011 6
(continued)
Updated Typical and maximum current consumption conditions, as
well as Table 21: Typical and maximum current consumption in Run
mode, code with data processing running from Flash memory (ART
accelerator disabled) and Table 20: Typical and maximum current
consumption in Run mode, code with data processing running from
Flash memory (ART accelerator enabled) or RAM. Added Figure 23,
Figure 24, Figure 25, and Figure 26.
Updated Table 22: Typical and maximum current consumption in Sleep
mode, and added Figure 27 and Figure 28.
Updated Table 23: Typical and maximum current consumptions in Stop
mode. Added Figure 29: Typical current consumption vs temperature
in Stop mode.
Updated Table 24: Typical and maximum current consumptions in
Standby mode and Table 25: Typical and maximum current
consumptions in VBAT mode.
Updated On-chip peripheral current consumption conditions and
Table 26: Peripheral current consumption.
Updated tWUSTDBY and tWUSTOP, and added Note 3 in Table 27: Lowpower
mode wakeup timings.
Maximum fHSE_ext and minimum tw(HSE) values updated in Table 28:
High-speed external user clock characteristics.
Updated C and gm in Table 30: HSE 4-26 MHz oscillator
characteristics. Updated RF, I2, gm, and tsu(LSE) in Table 31: LSE
oscillator characteristics (fLSE = 32.768 kHz).
Added Note 1 and updated ACCHSI, IDD(HSI, and tsu(HSI) in Table 32:
HSI oscillator characteristics. Added Figure 34: ACCHSI versus
temperature.
Updated fLSI, tsu(LSI) and IDD(LSI) in Table 33: LSI oscillator
characteristics. Added Figure 35: ACCLSI versus temperature
Table 34: Main PLL characteristics: removed note 1, updated tLOCK,
jitter, IDD(PLL) and IDDA(PLL), added Note 2 for fPLL_IN minimum and
maximum values.
Table 35: PLLI2S (audio PLL) characteristics: removed note 1,
updated tLOCK, jitter, IDD(PLLI2S) and IDDA(PLLI2S), added Note 2 for
fPLLI2S_IN minimum and maximum values.
Added Note 1 in Table 36: SSCG parameters constraint.
Updated Table 37: Flash memory characteristics. Modified Table 38:
Flash memory programming and added Note 2 for tprog. Updated tprog
and added Note 1 in Table 39: Flash memory programming with VPP.
Modified Figure 39: Recommended NRST pin protection.
Updated Table 42: EMI characteristics and EMI monitoring conditions
in Section : Electromagnetic Interference (EMI)g. Added Note 2 related
to VESD(HBM)in Table 43: ESD absolute maximum ratings.
Updated Table 48: I/O AC characteristics.
Added Section 6.3.15: I/O current injection characteristics.
Modified maximum frequency values and conditions in Table 48: I/O
AC characteristics.
Updated tres(TIM) in Table 50: Characteristics of TIMx connected to the
APB1 domain. Modified tres(TIM) and fEXT Table 51: Characteristics of
TIMx connected to the APB2 domain.
Table 95. Document revision history (continued)
Date Revision Changes
Revision history STM32F20xxx
170/178 DocID15818 Rev 11
22-Apr-2011 6
(continued)
Changed tw(SCKH) to tw(SCLH), tw(SCKL) to tw(SCLL), tr(SCK) to tr(SCL), and
tf(SCK) to tf(SCL) in Table 52: I2C characteristics and in Figure 40: I2C
bus AC waveforms and measurement circuit.
Added Table 57: USB OTG FS DC electrical characteristics and
updated Table 58: USB OTG FS electrical characteristics.
Updated VDD minimum value in Table 62: Ethernet DC electrical
characteristics.
Updated Table 66: ADC characteristics and RAIN equation.
Updated RAIN equation. Updated Table 68: DAC characteristics.
Updated tSTART in Table 69: TS characteristics.
Updated R typical value in Table 70: VBAT monitoring characteristics.
Updated Table 71: Embedded internal reference voltage.
Modified FSMC_NOE waveform in Figure 56: Asynchronous nonmultiplexed
SRAM/PSRAM/NOR read waveforms. Shifted end of
FSMC_NEx/NADV/addresses/NWE/NOE/NWAIT of a half FSMC_CLK
period, changed td(CLKH-NExH) to td(CLKL-NExH), td(CLKH-AIV) to td(CLKLAIV),
td(CLKH-NOEH) to td(CLKL-NOEH), and td(CLKH-NWEH) to td(CLKLNWEH),
and updated data latency from 1 to 0 in Figure 60:
Synchronous multiplexed NOR/PSRAM read timings, Figure 61:
Synchronous multiplexed PSRAM write timings, Figure 62:
Synchronous non-multiplexed NOR/PSRAM read timings, and
Figure 63: Synchronous non-multiplexed PSRAM write timings,
Changed td(CLKH-NExH) to td(CLKL-NExH), td(CLKH-AIV) to td(CLKL-AIV),
td(CLKH-NOEH) to td(CLKL-NOEH), td(CLKH-NWEH) to td(CLKL-NWEH), and
modified tw(CLK) minimum value in Table 76, Table 77, Table 78, and
Table 79.
Updated note 2 in Table 72, Table 73, Table 74, Table 75, Table 76,
Table 77, Table 78, and Table 79.
Modified th(NIOWR-D) in Figure 69: PC Card/CompactFlash controller
waveforms for I/O space write access.
Modified FSMC_NCEx signal in Figure 70: NAND controller
waveforms for read access, Figure 71: NAND controller waveforms for
write access, Figure 72: NAND controller waveforms for common
memory read access, and Figure 73: NAND controller waveforms for
common memory write access
Specified Full speed (FS) mode for Figure 89: USB OTG HS
peripheral-only connection in FS mode and Figure 90: USB OTG HS
host-only connection in FS mode.
Table 95. Document revision history (continued)
Date Revision Changes
DocID15818 Rev 11 171/178
STM32F20xxx Revision history
177
14-Jun-2011 7
Added SDIO in Table 2: STM32F205xx features and peripheral counts.
Updated VIN for 5V tolerant pins in Table 11: Voltage characteristics.
Updated jitter parameters description in Table 34: Main PLL
characteristics.
Remove jitter values for system clock in Table 35: PLLI2S (audio PLL)
characteristics.
Updated Table 42: EMI characteristics.
Update Note 2 in Table 52: I2C characteristics.
Updated Avg_Slope typical value and TS_temp minimum value in
Table 69: TS characteristics.
Updated TS_vbat minimum value in Table 70: VBAT monitoring
characteristics.
Updated TS_vrefint mimimum value in Table 71: Embedded internal
reference voltage.
Added Software option in Section 8: Part numbering.
In Table 101: Main applications versus package for STM32F2xxx
microcontrollers, renamed USB1 and USB2, USB OTG FS and USB
OTG HS, respectively; and removed USB OTG FS and camera
interface for 64-pin package; added USB OTG HS on 64-pin package;
added Note 1 and Note 2.
20-Dec-2011 8
Updated SDIO register addresses in Figure 16: Memory map.
Updated Figure 3: Compatible board design between STM32F10xx
and STM32F2xx for LQFP144 package, Figure 2: Compatible board
design between STM32F10xx and STM32F2xx for LQFP100 package,
Figure 1: Compatible board design between STM32F10xx and
STM32F2xx for LQFP64 package, and added Figure 4: Compatible
board design between STM32F10xx and STM32F2xx for LQFP176
package.
Updated Section 3.3: Memory protection unit.
Updated Section 3.6: Embedded SRAM.
Updated Section 3.28: Universal serial bus on-the-go full-speed
(OTG_FS) to remove external FS OTG PHY support.
In Table 8: STM32F20x pin and ball definitions: changed SPI2_MCK
and SPI3_MCK to I2S2_MCK and I2S3_MCK, respectively. Added
ETH _RMII_TX_EN atlternate function to PG11. Added EVENTOUT in
the list of alternate functions for I/O pin/balls. Removed
OTG_FS_SDA, OTG_FS_SCL and OTG_FS_INTN alternate
functions.
In Table 10: Alternate function mapping: changed I2S3_SCK to
I2S3_MCK for PC7/AF6, added FSMC_NCE3 for PG9, FSMC_NE3
for PG10, and FSMC_NCE2 for PD7. Removed OTG_FS_SDA,
OTG_FS_SCL and OTG_FS_INTN alternate functions. Changed
I2S3_SCK into I2S3_MCK for PC7/AF6. Updated peripherals
corresponding to AF12.
Removed CEXT and ESR from Table 14: General operating
conditions.
Table 95. Document revision history (continued)
Date Revision Changes
Revision history STM32F20xxx
172/178 DocID15818 Rev 11
20-Dec-2011 8
(continued)
Added maximum power consumption at TA=25 °C in Table 23: Typical
and maximum current consumptions in Stop mode.
Updated md minimum value in Table 36: SSCG parameters constraint.
Added examples in Section 6.3.11: PLL spread spectrum clock
generation (SSCG) characteristics.
Updated Table 54: SPI characteristics and Table 55: I2S
characteristics.
Updated Figure 47: ULPI timing diagram and Table 61: ULPI timing.
Updated Table 63: Dynamics characteristics: Ethernet MAC signals for
SMI, Table 64: Dynamics characteristics: Ethernet MAC signals for
RMII, and Table 65: Dynamics characteristics: Ethernet MAC signals
for MII.
Section 6.3.25: FSMC characteristics: updated Table 72 toTable 83,
changed CL value to 30 pF, and modified FSMC configuration for
asynchronous timings and waveforms. Updated Figure 61:
Synchronous multiplexed PSRAM write timings.
UpdatedTable 84: DCMI characteristics.
Updated Table 92: UFBGA176+25 - ultra thin fine pitch ball grid array
10 × 10 × 0.6 mm mechanical data.
Updated Table 94: Ordering information scheme.
Appendix A.2: USB OTG full speed (FS) interface solutions: updated
Figure 87: USB OTG FS (full speed) host-only connection and added
Note 2, updated Figure 88: OTG FS (full speed) connection dual-role
with internal PHY and added Note 3 and Note 4, modified Figure 89:
OTG HS (high speed) device connection, host and dual-role in highspeed
mode with external PHY and added Note 2.
Appendix A.3: USB OTG high speed (HS) interface solutions:
removed figures USB OTG HS device-only connection in FS mode and
USB OTG HS host-only connection in FS mode,updated Figure 89:
OTG HS (high speed) device connection, host and dual-role in highspeed
mode with external PHY.
Added Appendix A.4: Ethernet interface solutions.
Updated disclaimer on last page.
24-Apr-2012 9
Updated VDD minimum value in Section 2: Description.
Updated number of USB OTG HS and FS, modified packages for
STM32F207Ix part numbers, added Note 1 related to FSMC and
Note 2 related to SPI/I2S, and updated Note 3 in Table 2:
STM32F205xx features and peripheral counts and Table 3:
STM32F207xx features and peripheral counts.
Added Note 2 and update TIM5 in Figure 4: STM32F20x block
diagram.
Updated maximum number of maskable interrupts in Section 3.10:
Nested vectored interrupt controller (NVIC).
Updated VDD minimum value in Section 3.14: Power supply schemes.
Updated Note a in Section 3.16.1: Regulator ON.
Removed STM32F205xx in Section 3.28: Universal serial bus on-thego
full-speed (OTG_FS).
Table 95. Document revision history (continued)
Date Revision Changes
DocID15818 Rev 11 173/178
STM32F20xxx Revision history
177
24-Apr-2012 9
(continued)
Removed support of I2C for OTG PHY in Section 3.29: Universal serial
bus on-the-go high-speed (OTG_HS).
Removed OTG_HS_SCL, OTG_HS_SDA, OTG_FS_INTN in Table 8:
STM32F20x pin and ball definitions and Table 10: Alternate function
mapping.
Renamed PH10 alternate function into TIM5_CH1 in Table 10:
Alternate function mapping.
Added Table 9: FSMC pin definition.
Updated Note 2 in Table 14: General operating conditions, Note 2 in
Table 15: Limitations depending on the operating power supply range,
and Note 1 below Figure 21: Number of wait states versus fCPU and
VDD range.
Updated VPOR/PDR in Table 19: Embedded reset and power control
block characteristics.
Updated typical values in Table 24: Typical and maximum current
consumptions in Standby mode and Table 25: Typical and maximum
current consumptions in VBAT mode.
Updated Table 30: HSE 4-26 MHz oscillator characteristics and
Table 31: LSE oscillator characteristics (fLSE = 32.768 kHz).
Updated Table 37: Flash memory characteristics, Table 38: Flash
memory programming, and Table 39: Flash memory programming with
VPP.
Updated Section : Output driving current.
Updated Note 3 and removed note related to minimum hold time value
in Table 52: I2C characteristics.
Updated Table 64: Dynamics characteristics: Ethernet MAC signals for
RMII.
Updated Note 1, CADC, IVREF+, and IVDDA in Table 66: ADC
characteristics.
Updated Note 3 and note concerning ADC accuracy vs. negative
injection current in Table 67: ADC accuracy.
Updated Note 1 in Table 68: DAC characteristics.
Updated Section Figure 85.: UFBGA176+25 - ultra thin fine pitch ball
grid array 10 × 10 × 0.6 mm, package outline.
Appendix A.1: Main applications versus package: removed number of
address lines for FSMC/NAND in Table 101: Main applications versus
package for STM32F2xxx microcontrollers.
Appendix A.4: Ethernet interface solutions: updated Figure 92:
Complete audio player solution 1 and Figure 93: Complete audio
player solution 2.
Table 95. Document revision history (continued)
Date Revision Changes
Revision history STM32F20xxx
174/178 DocID15818 Rev 11
29-Oct-2012 10
Changed minimum supply voltage from 1.65 to 1.8 V.
Updated number of AHB buses in Section 2: Description and
Section 3.12: Clocks and startup.
Removed Figure 4. Compatible board design between STM32F10xx
and STM32F2xx for LQFP176 package.
Updated Note 2 below Figure 4: STM32F20x block diagram.
Changed System memory to System memory + OTP in Figure 16:
Memory map.
Added Note 1 below Table 16: VCAP1/VCAP2 operating conditions.
Updated VDDA and VREF+ decouping capacitor in Figure 19: Power
supply scheme and updated Note 3.
Changed simplex mode into half-duplex mode in Section 3.24: Interintegrated
sound (I2S).
Replaced DAC1_OUT and DAC2_OUT by DAC_OUT1 and
DAC_OUT2, respectively.Changed TIM2_CH1/TIM2_ETR into
TIM2_CH1_ETR for PA0 and PA5 in Table 10: Alternate function
mapping.
Updated note applying to IDD (external clock and all peripheral
disabled) in Table 21: Typical and maximum current consumption in
Run mode, code with data processing running from Flash memory
(ART accelerator disabled). Updated Note 3 below Table 22: Typical
and maximum current consumption in Sleep mode.
Removed fHSE_ext typical value in Table 28: High-speed external user
clock characteristics.
Updated master I2S clock jitter conditions and vlaues in Table 35:
PLLI2S (audio PLL) characteristics.
Updated equations in Section 6.3.11: PLL spread spectrum clock
generation (SSCG) characteristics.
Swapped TTL and CMOS port conditions for VOL and VOH in Table 47:
Output voltage characteristics.
Updated VIL(NRST) and VIH(NRST) in Table 49: NRST pin
characteristics.
Updated Table 54: SPI characteristics and Table 55: I2S
characteristics. Removed note 1 related to measurement points below
Figure 42: SPI timing diagram - slave mode and CPHA = 1, Figure 43:
SPI timing diagram - master mode, and Figure 44: I2S slave timing
diagram (Philips protocol)(1).
Updated tHC in Table 61: ULPI timing.
Updated Figure 48: Ethernet SMI timing diagram, Table 63: Dynamics
characteristics: Ethernet MAC signals for SMI and Table 65: Dynamics
characteristics: Ethernet MAC signals for MII.
Update fTRIG in Table 66: ADC characteristics.
Updated IDDA description in Table 68: DAC characteristics.
Updated note below Figure 53: Power supply and reference
decoupling (VREF+ not connected to VDDA) and Figure 54: Power
supply and reference decoupling (VREF+ connected to VDDA).
Table 95. Document revision history (continued)
Date Revision Changes
DocID15818 Rev 11 175/178
STM32F20xxx Revision history
177
29-Oct-2012 10
(continued)
Replaced td(CLKL-NOEL) by td(CLKH-NOEL) in Table 76: Synchronous
multiplexed NOR/PSRAM read timings, Table 78: Synchronous nonmultiplexed
NOR/PSRAM read timings, Figure 60: Synchronous
multiplexed NOR/PSRAM read timings and Figure 62: Synchronous
non-multiplexed NOR/PSRAM read timings.
Added Figure 84: LQFP176 recommended footprint.
Added Note 2 below Figure 86: Regulator OFF/internal reset ON.
Updated device subfamily in Table 94: Ordering information scheme.
Remove reference to note 2 for USB IOTG FS in Table 101: Main
applications versus package for STM32F2xxx microcontrollers.
Table 95. Document revision history (continued)
Date Revision Changes
Revision history STM32F20xxx
176/178 DocID15818 Rev 11
04-Nov-2013 11
In the whole document, updated notes related to WLCSP64+2 usage
with IRROFF set to VDD. Updated Section 3.14: Power supply
schemes, Section 3.15: Power supply supervisor, Section 3.16.1:
Regulator ON and Section 3.16.2: Regulator OFF. Added
Section 3.16.3: Regulator ON/OFF and internal reset ON/OFF
availability. Added note related to WLCSP64+2 package.
Restructured RTC features and added reference clock detection in
Section 3.17: Real-time clock (RTC), backup SRAM and backup
registers.
Added note indicating the package view below Figure 10: STM32F20x
LQFP64 pinout, Figure 12: STM32F20x LQFP100 pinout, Figure 13:
STM32F20x LQFP144 pinout, and Figure 14: STM32F20x LQFP176
pinout.
Added Table 7: Legend/abbreviations used in the pinout table. Table 8:
STM32F20x pin and ball definitions: content reformatted; removed
indeces on VSS and VDD; updated PA4, PA5, PA6, PC4, BOOT0;
replaced DCMI_12 by DCMI_D12, TIM8_CHIN by TIM8_CH1N,
ETH_MII_RX_D0 by ETH_MII_RXD0, ETH_MII_RX_D1 by
ETH_MII_RXD1, ETH_RMII_RX_D0 by ETH_RMII_RXD0,
ETH_RMII_RX_D1 by ETH_RMII_RXD1, and RMII_CRS_DV by
ETH_RMII_CRS_DV.
Table 10: Alternate function mapping: replaced FSMC_BLN1 by
FSMC_NBL1, added EVENTOUT as AF15 alternated fucntion for
PC13, PC14, PC15, PH0, PH1, and PI8.
Updated Figure 17: Pin loading conditions and Figure 18: Pin input
voltage.
Added VIN in Table 14: General operating conditions.
Removed note applying to VPOR/PDR minimum value in Table 19:
Embedded reset and power control block characteristics.
Updated notes related to CL1 and CL2 in Section : Low-speed external
clock generated from a crystal/ceramic resonator.
Updated conditions in Table 41: EMS characteristics. Updated
Table 42: EMI characteristics. Updated VIL, VIH and VHys in Table 46:
I/O static characteristics. Added Figure : Output driving current and
updated Figure 38: I/O AC characteristics definition.
Updated VIL(NRST) and VIH(NRST) in Table 49: NRST pin
characteristics, updated Figure 38: I/O AC characteristics definition.
Removed tests conditions in Section : I2C interface characteristics.
Updated Table 52: I2C characteristics and Figure 40: I2C bus AC
waveforms and measurement circuit.
Updated IVREF+ and IVDDA in Table 66: ADC characteristics. Updated
Offset comments in Table 68: DAC characteristics.
Updated minimum th(CLKH-DV) value in Table 78: Synchronous nonmultiplexed
NOR/PSRAM read timings.
Table 95. Document revision history (continued)
Date Revision Changes
DocID15818 Rev 11 177/178
STM32F20xxx Revision history
177
04-Nov-2013 11
(continued)
Removed Appendix A Application block diagrams.
Updated Figure 76: LQFP64 – 10 x 10 mm 64 pin low-profile quad flat
package outline and Table 87: LQFP64 – 10 x 10 mm 64 pin lowprofile
quad flat package mechanical data. Updated Figure 79:
LQFP100, 14 x 14 mm 100-pin low-profile quad flat package outline,
Figure 81: LQFP144, 20 x 20 mm, 144-pin low-profile quad flat
package outline, Figure 83: LQFP176 - Low profile quad flat package
24 × 24 × 1.4 mm, package outline. Updated Figure 85:
UFBGA176+25 - ultra thin fine pitch ball grid array 10 × 10 × 0.6 mm,
package outline and Figure 85: UFBGA176+25 - ultra thin fine pitch
ball grid array 10 × 10 × 0.6 mm, package outline.
Table 95. Document revision history (continued)
Date Revision Changes
STM32F20xxx
178/178 DocID15818 Rev 11
Please Read Carefully:
Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the
right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any
time, without notice.
All ST products are sold pursuant to ST’s terms and conditions of sale.
Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no
liability whatsoever relating to the choice, selection or use of the ST products and services described herein.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this
document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products
or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such
third party products or services or any intellectual property contained therein.
UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED
WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED
WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS
OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT.
ST PRODUCTS ARE NOT DESIGNED OR AUTHORIZED FOR USE IN: (A) SAFETY CRITICAL APPLICATIONS SUCH AS LIFE
SUPPORTING, ACTIVE IMPLANTED DEVICES OR SYSTEMS WITH PRODUCT FUNCTIONAL SAFETY REQUIREMENTS; (B)
AERONAUTIC APPLICATIONS; (C) AUTOMOTIVE APPLICATIONS OR ENVIRONMENTS, AND/OR (D) AEROSPACE APPLICATIONS
OR ENVIRONMENTS. WHERE ST PRODUCTS ARE NOT DESIGNED FOR SUCH USE, THE PURCHASER SHALL USE PRODUCTS AT
PURCHASER’S SOLE RISK, EVEN IF ST HAS BEEN INFORMED IN WRITING OF SUCH USAGE, UNLESS A PRODUCT IS
EXPRESSLY DESIGNATED BY ST AS BEING INTENDED FOR “AUTOMOTIVE, AUTOMOTIVE SAFETY OR MEDICAL” INDUSTRY
DOMAINS ACCORDING TO ST PRODUCT DESIGN SPECIFICATIONS. PRODUCTS FORMALLY ESCC, QML OR JAN QUALIFIED ARE
DEEMED SUITABLE FOR USE IN AEROSPACE BY THE CORRESPONDING GOVERNMENTAL AGENCY.
Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void
any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any
liability of ST.
ST and the ST logo are trademarks or registered trademarks of ST in various countries.
Information in this document supersedes and replaces all information previously supplied.
The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners.
© 2013 STMicroelectronics - All rights reserved
STMicroelectronics group of companies
Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan -
Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America
www.st.com
STM32F405xx
STM32F407xx
ARM Cortex-M4 32b MCU+FPU, 210DMIPS, up to 1MB Flash/192+4KB RAM, USB
OTG HS/FS, Ethernet, 17 TIMs, 3 ADCs, 15 comm. interfaces & camera
Datasheet - production data
Features
• Core: ARM 32-bit Cortex™-M4 CPU with FPU,
Adaptive real-time accelerator (ART
Accelerator™) allowing 0-wait state execution
from Flash memory, frequency up to 168 MHz,
memory protection unit, 210 DMIPS/
1.25 DMIPS/MHz (Dhrystone 2.1), and DSP
instructions
• Memories
– Up to 1 Mbyte of Flash memory
– Up to 192+4 Kbytes of SRAM including 64-
Kbyte of CCM (core coupled memory) data
RAM
– Flexible static memory controller
supporting Compact Flash, SRAM,
PSRAM, NOR and NAND memories
• LCD parallel interface, 8080/6800 modes
• Clock, reset and supply management
– 1.8 V to 3.6 V application supply and I/Os
– POR, PDR, PVD and BOR
– 4-to-26 MHz crystal oscillator
– Internal 16 MHz factory-trimmed RC (1%
accuracy)
– 32 kHz oscillator for RTC with calibration
– Internal 32 kHz RC with calibration
• Low power
– Sleep, Stop and Standby modes
– VBAT supply for RTC, 20×32 bit backup
registers + optional 4 KB backup SRAM
• 3×12-bit, 2.4 MSPS A/D converters: up to 24
channels and 7.2 MSPS in triple interleaved
mode
• 2×12-bit D/A converters
• General-purpose DMA: 16-stream DMA
controller with FIFOs and burst support
• Up to 17 timers: up to twelve 16-bit and two 32-
bit timers up to 168 MHz, each with up to 4
IC/OC/PWM or pulse counter and quadrature
(incremental) encoder input
• Debug mode
– Serial wire debug (SWD) & JTAG
interfaces
– Cortex-M4 Embedded Trace Macrocell™
• Up to 140 I/O ports with interrupt capability
– Up to 136 fast I/Os up to 84 MHz
– Up to 138 5 V-tolerant I/Os
• Up to 15 communication interfaces
– Up to 3 × I2C interfaces (SMBus/PMBus)
– Up to 4 USARTs/2 UARTs (10.5 Mbit/s, ISO
7816 interface, LIN, IrDA, modem control)
– Up to 3 SPIs (42 Mbits/s), 2 with muxed
full-duplex I2S to achieve audio class
accuracy via internal audio PLL or external
clock
– 2 × CAN interfaces (2.0B Active)
– SDIO interface
• Advanced connectivity
– USB 2.0 full-speed device/host/OTG
controller with on-chip PHY
– USB 2.0 high-speed/full-speed
device/host/OTG controller with dedicated
DMA, on-chip full-speed PHY and ULPI
– 10/100 Ethernet MAC with dedicated DMA:
supports IEEE 1588v2 hardware, MII/RMII
• 8- to 14-bit parallel camera interface up to
54 Mbytes/s
• True random number generator
• CRC calculation unit
• 96-bit unique ID
• RTC: subsecond accuracy, hardware calendar
LQFP64 (10 × 10 mm)
LQFP100 (14 × 14 mm)
LQFP144 (20 × 20 mm)
FBGA
UFBGA176
(10 × 10 mm)
LQFP176 (24 × 24 mm)
WLCSP90
Table 1. Device summary
Reference Part number
STM32F405xx STM32F405RG, STM32F405VG, STM32F405ZG,
STM32F405OG, STM32F405OE
STM32F407xx STM32F407VG, STM32F407IG, STM32F407ZG,
STM32F407VE, STM32F407ZE, STM32F407IE
www.st.com
Contents STM32F405xx, STM32F407xx
2/185 DocID022152 Rev 4
Contents
1 Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
2 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
2.1 Full compatibility throughout the family . . . . . . . . . . . . . . . . . . . . . . . . . . 15
2.2 Device overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
2.2.1 ARM® Cortex™-M4F core with embedded Flash and SRAM . . . . . . . . 19
2.2.2 Adaptive real-time memory accelerator (ART Accelerator™) . . . . . . . . 19
2.2.3 Memory protection unit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
2.2.4 Embedded Flash memory . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
2.2.5 CRC (cyclic redundancy check) calculation unit . . . . . . . . . . . . . . . . . . 20
2.2.6 Embedded SRAM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
2.2.7 Multi-AHB bus matrix . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
2.2.8 DMA controller (DMA) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
2.2.9 Flexible static memory controller (FSMC) . . . . . . . . . . . . . . . . . . . . . . . 22
2.2.10 Nested vectored interrupt controller (NVIC) . . . . . . . . . . . . . . . . . . . . . . 22
2.2.11 External interrupt/event controller (EXTI) . . . . . . . . . . . . . . . . . . . . . . . 22
2.2.12 Clocks and startup . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
2.2.13 Boot modes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
2.2.14 Power supply schemes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
2.2.15 Power supply supervisor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
2.2.16 Voltage regulator . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
2.2.17 Regulator ON/OFF and internal reset ON/OFF availability . . . . . . . . . . 28
2.2.18 Real-time clock (RTC), backup SRAM and backup registers . . . . . . . . 28
2.2.19 Low-power modes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
2.2.20 VBAT operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
2.2.21 Timers and watchdogs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
2.2.22 Inter-integrated circuit interface (I²C) . . . . . . . . . . . . . . . . . . . . . . . . . . 33
2.2.23 Universal synchronous/asynchronous receiver transmitters (USART) . 33
2.2.24 Serial peripheral interface (SPI) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34
2.2.25 Inter-integrated sound (I2S) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34
2.2.26 Audio PLL (PLLI2S) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34
2.2.27 Secure digital input/output interface (SDIO) . . . . . . . . . . . . . . . . . . . . . 35
2.2.28 Ethernet MAC interface with dedicated DMA and IEEE 1588 support . 35
2.2.29 Controller area network (bxCAN) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36
DocID022152 Rev 4 3/185
STM32F405xx, STM32F407xx Contents
2.2.30 Universal serial bus on-the-go full-speed (OTG_FS) . . . . . . . . . . . . . . . 36
2.2.31 Universal serial bus on-the-go high-speed (OTG_HS) . . . . . . . . . . . . . 36
2.2.32 Digital camera interface (DCMI) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37
2.2.33 Random number generator (RNG) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37
2.2.34 General-purpose input/outputs (GPIOs) . . . . . . . . . . . . . . . . . . . . . . . . 37
2.2.35 Analog-to-digital converters (ADCs) . . . . . . . . . . . . . . . . . . . . . . . . . . . 37
2.2.36 Temperature sensor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37
2.2.37 Digital-to-analog converter (DAC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38
2.2.38 Serial wire JTAG debug port (SWJ-DP) . . . . . . . . . . . . . . . . . . . . . . . . . 38
2.2.39 Embedded Trace Macrocell™ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38
3 Pinouts and pin description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39
4 Memory mapping . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 69
5 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 74
5.1 Parameter conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 74
5.1.1 Minimum and maximum values . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 74
5.1.2 Typical values . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 74
5.1.3 Typical curves . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 74
5.1.4 Loading capacitor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 74
5.1.5 Pin input voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 74
5.1.6 Power supply scheme . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75
5.1.7 Current consumption measurement . . . . . . . . . . . . . . . . . . . . . . . . . . . 76
5.2 Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 76
5.3 Operating conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 77
5.3.1 General operating conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 77
5.3.2 VCAP_1/VCAP_2 external capacitor . . . . . . . . . . . . . . . . . . . . . . . . . . . 79
5.3.3 Operating conditions at power-up / power-down (regulator ON) . . . . . . 80
5.3.4 Operating conditions at power-up / power-down (regulator OFF) . . . . . 80
5.3.5 Embedded reset and power control block characteristics . . . . . . . . . . . 80
5.3.6 Supply current characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 82
5.3.7 Wakeup time from low-power mode . . . . . . . . . . . . . . . . . . . . . . . . . . . 95
5.3.8 External clock source characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . 96
5.3.9 Internal clock source characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . 99
5.3.10 PLL characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100
5.3.11 PLL spread spectrum clock generation (SSCG) characteristics . . . . . 102
Contents STM32F405xx, STM32F407xx
4/185 DocID022152 Rev 4
5.3.12 Memory characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 104
5.3.13 EMC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 106
5.3.14 Absolute maximum ratings (electrical sensitivity) . . . . . . . . . . . . . . . . 108
5.3.15 I/O current injection characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . 109
5.3.16 I/O port characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 109
5.3.17 NRST pin characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 113
5.3.18 TIM timer characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 114
5.3.19 Communications interfaces . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 116
5.3.20 12-bit ADC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 129
5.3.21 Temperature sensor characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . 134
5.3.22 VBAT monitoring characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 134
5.3.23 Embedded reference voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 135
5.3.24 DAC electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 135
5.3.25 FSMC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 137
5.3.26 Camera interface (DCMI) timing specifications . . . . . . . . . . . . . . . . . . 155
5.3.27 SD/SDIO MMC card host interface (SDIO) characteristics . . . . . . . . . 156
5.3.28 RTC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 157
6 Package characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 158
6.1 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 158
6.2 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 169
7 Part numbering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 170
Appendix A Application block diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 171
A.1 USB OTG full speed (FS) interface solutions . . . . . . . . . . . . . . . . . . . . . 171
A.2 USB OTG high speed (HS) interface solutions . . . . . . . . . . . . . . . . . . . . 173
A.3 Ethernet interface solutions. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174
8 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 176
DocID022152 Rev 4 5/185
STM32F405xx, STM32F407xx List of tables
List of tables
Table 1. Device summary . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Table 2. STM32F405xx and STM32F407xx: features and peripheral counts. . . . . . . . . . . . . . . . . . 13
Table 3. Regulator ON/OFF and internal reset ON/OFF availability. . . . . . . . . . . . . . . . . . . . . . . . . 28
Table 4. Timer feature comparison. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
Table 5. USART feature comparison . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34
Table 6. Legend/abbreviations used in the pinout table . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44
Table 7. STM32F40x pin and ball definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45
Table 8. FSMC pin definition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 57
Table 9. Alternate function mapping . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60
Table 10. STM32F40x register boundary addresses . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70
Table 11. Voltage characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 76
Table 12. Current characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 77
Table 13. Thermal characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 77
Table 14. General operating conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 77
Table 15. Limitations depending on the operating power supply range . . . . . . . . . . . . . . . . . . . . . . . 79
Table 16. VCAP_1/VCAP_2 operating conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80
Table 17. Operating conditions at power-up / power-down (regulator ON) . . . . . . . . . . . . . . . . . . . . 80
Table 18. Operating conditions at power-up / power-down (regulator OFF). . . . . . . . . . . . . . . . . . . . 80
Table 19. Embedded reset and power control block characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 81
Table 20. Typical and maximum current consumption in Run mode, code with data processing
running from Flash memory (ART accelerator enabled) or RAM . . . . . . . . . . . . . . . . . . . 83
Table 21. Typical and maximum current consumption in Run mode, code with data processing
running from Flash memory (ART accelerator disabled) . . . . . . . . . . . . . . . . . . . . . . . . . . 84
Table 22. Typical and maximum current consumption in Sleep mode . . . . . . . . . . . . . . . . . . . . . . . . 87
Table 23. Typical and maximum current consumptions in Stop mode . . . . . . . . . . . . . . . . . . . . . . . . 88
Table 24. Typical and maximum current consumptions in Standby mode . . . . . . . . . . . . . . . . . . . . . 88
Table 25. Typical and maximum current consumptions in VBAT mode. . . . . . . . . . . . . . . . . . . . . . . . 89
Table 26. Switching output I/O current consumption . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 92
Table 27. Peripheral current consumption . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 93
Table 28. Low-power mode wakeup timings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 95
Table 29. High-speed external user clock characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 96
Table 30. Low-speed external user clock characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 96
Table 31. HSE 4-26 MHz oscillator characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 98
Table 32. LSE oscillator characteristics (fLSE = 32.768 kHz) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 99
Table 33. HSI oscillator characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 99
Table 34. LSI oscillator characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100
Table 35. Main PLL characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 101
Table 36. PLLI2S (audio PLL) characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 101
Table 37. SSCG parameters constraint . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 102
Table 38. Flash memory characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 104
Table 39. Flash memory programming. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 104
Table 40. Flash memory programming with VPP . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 106
Table 41. Flash memory endurance and data retention . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 106
Table 42. EMS characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 107
Table 43. EMI characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 108
Table 44. ESD absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 108
Table 45. Electrical sensitivities . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 109
Table 46. I/O current injection susceptibility . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 109
List of tables STM32F405xx, STM32F407xx
6/185 DocID022152 Rev 4
Table 47. I/O static characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 110
Table 48. Output voltage characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 111
Table 49. I/O AC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 112
Table 50. NRST pin characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 114
Table 51. Characteristics of TIMx connected to the APB1 domain . . . . . . . . . . . . . . . . . . . . . . . . . 115
Table 52. Characteristics of TIMx connected to the APB2 domain . . . . . . . . . . . . . . . . . . . . . . . . . 116
Table 53. I2C characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 116
Table 54. SCL frequency (fPCLK1= 42 MHz.,VDD = 3.3 V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 118
Table 55. SPI dynamic characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 118
Table 56. I2S dynamic characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 122
Table 57. USB OTG FS startup time . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 124
Table 58. USB OTG FS DC electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 124
Table 59. USB OTG FS electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125
Table 60. USB HS DC electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125
Table 61. USB HS clock timing parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125
Table 62. ULPI timing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 126
Table 63. Ethernet DC electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 127
Table 64. Dynamic characteristics: Ehternet MAC signals for SMI. . . . . . . . . . . . . . . . . . . . . . . . . . 127
Table 65. Dynamic characteristics: Ethernet MAC signals for RMII . . . . . . . . . . . . . . . . . . . . . . . . . 128
Table 66. Dynamic characteristics: Ethernet MAC signals for MII . . . . . . . . . . . . . . . . . . . . . . . . . . 128
Table 67. ADC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 129
Table 68. ADC accuracy at fADC = 30 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 131
Table 69. Temperature sensor characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 134
Table 70. Temperature sensor calibration values. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 134
Table 71. VBAT monitoring characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 134
Table 72. Embedded internal reference voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 135
Table 73. Internal reference voltage calibration values . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 135
Table 74. DAC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 135
Table 75. Asynchronous non-multiplexed SRAM/PSRAM/NOR read timings . . . . . . . . . . . . . . . . . 138
Table 76. Asynchronous non-multiplexed SRAM/PSRAM/NOR write timings . . . . . . . . . . . . . . . . . 139
Table 77. Asynchronous multiplexed PSRAM/NOR read timings. . . . . . . . . . . . . . . . . . . . . . . . . . . 140
Table 78. Asynchronous multiplexed PSRAM/NOR write timings . . . . . . . . . . . . . . . . . . . . . . . . . . 141
Table 79. Synchronous multiplexed NOR/PSRAM read timings . . . . . . . . . . . . . . . . . . . . . . . . . . . 143
Table 80. Synchronous multiplexed PSRAM write timings. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 144
Table 81. Synchronous non-multiplexed NOR/PSRAM read timings . . . . . . . . . . . . . . . . . . . . . . . . 145
Table 82. Synchronous non-multiplexed PSRAM write timings . . . . . . . . . . . . . . . . . . . . . . . . . . . . 147
Table 83. Switching characteristics for PC Card/CF read and write cycles
in attribute/common space. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 151
Table 84. Switching characteristics for PC Card/CF read and write cycles
in I/O space . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 152
Table 85. Switching characteristics for NAND Flash read cycles . . . . . . . . . . . . . . . . . . . . . . . . . . . 154
Table 86. Switching characteristics for NAND Flash write cycles. . . . . . . . . . . . . . . . . . . . . . . . . . . 155
Table 87. DCMI characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 155
Table 88. Dynamic characteristics: SD / MMC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 157
Table 89. RTC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 157
Table 90. WLCSP90 - 0.400 mm pitch wafer level chip size package mechanical data . . . . . . . . . 159
Table 91. LQFP64 – 10 x 10 mm 64 pin low-profile quad flat package mechanical data . . . . . . . . . 160
Table 92. LQPF100 – 14 x 14 mm 100-pin low-profile quad flat package mechanical data. . . . . . . 162
Table 93. LQFP144, 20 x 20 mm, 144-pin low-profile quad flat package mechanical data . . . . . . . 164
Table 94. UFBGA176+25 - ultra thin fine pitch ball grid array 10 × 10 × 0.6 mm
mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 166
Table 95. LQFP176, 24 x 24 mm, 176-pin low-profile quad flat package mechanical data . . . . . . . 167
DocID022152 Rev 4 7/185
STM32F405xx, STM32F407xx List of tables
Table 96. Package thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 169
Table 97. Ordering information scheme . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 170
Table 98. Document revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 176
List of figures STM32F405xx, STM32F407xx
8/185 DocID022152 Rev 4
List of figures
Figure 1. Compatible board design between STM32F10xx/STM32F4xx for LQFP64. . . . . . . . . . . . 15
Figure 2. Compatible board design STM32F10xx/STM32F2xx/STM32F4xx
for LQFP100 package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Figure 3. Compatible board design between STM32F10xx/STM32F2xx/STM32F4xx
for LQFP144 package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Figure 4. Compatible board design between STM32F2xx and STM32F4xx
for LQFP176 and BGA176 packages . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Figure 5. STM32F40x block diagram. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Figure 6. Multi-AHB matrix. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Figure 7. Power supply supervisor interconnection with internal reset OFF . . . . . . . . . . . . . . . . . . . 24
Figure 8. PDR_ON and NRST control with internal reset OFF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
Figure 9. Regulator OFF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
Figure 10. Startup in regulator OFF mode: slow VDD slope
- power-down reset risen after VCAP_1/VCAP_2 stabilization . . . . . . . . . . . . . . . . . . . . . . . . 27
Figure 11. Startup in regulator OFF mode: fast VDD slope
- power-down reset risen before VCAP_1/VCAP_2 stabilization . . . . . . . . . . . . . . . . . . . . . . 28
Figure 12. STM32F40x LQFP64 pinout . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39
Figure 13. STM32F40x LQFP100 pinout . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40
Figure 14. STM32F40x LQFP144 pinout . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41
Figure 15. STM32F40x LQFP176 pinout . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42
Figure 16. STM32F40x UFBGA176 ballout . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 43
Figure 17. STM32F40x WLCSP90 ballout. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44
Figure 18. STM32F40x memory map . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 69
Figure 19. Pin loading conditions. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 74
Figure 20. Pin input voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 74
Figure 21. Power supply scheme . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75
Figure 22. Current consumption measurement scheme . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 76
Figure 23. External capacitor CEXT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80
Figure 24. Typical current consumption versus temperature, Run mode, code with data
processing running from Flash (ART accelerator ON) or RAM, and peripherals OFF . . . . 85
Figure 25. Typical current consumption versus temperature, Run mode, code with data
processing running from Flash (ART accelerator ON) or RAM, and peripherals ON . . . . . 85
Figure 26. Typical current consumption versus temperature, Run mode, code with data
processing running from Flash (ART accelerator OFF) or RAM, and peripherals OFF . . . 86
Figure 27. Typical current consumption versus temperature, Run mode, code with data
processing running from Flash (ART accelerator OFF) or RAM, and peripherals ON . . . . 86
Figure 28. Typical VBAT current consumption (LSE and RTC ON/backup RAM OFF) . . . . . . . . . . . . 89
Figure 29. Typical VBAT current consumption (LSE and RTC ON/backup RAM ON) . . . . . . . . . . . . . 90
Figure 30. High-speed external clock source AC timing diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . 97
Figure 31. Low-speed external clock source AC timing diagram. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 97
Figure 32. Typical application with an 8 MHz crystal . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 98
Figure 33. Typical application with a 32.768 kHz crystal . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 99
Figure 34. ACCLSI versus temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100
Figure 35. PLL output clock waveforms in center spread mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . 103
Figure 36. PLL output clock waveforms in down spread mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 104
Figure 37. I/O AC characteristics definition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 113
Figure 38. Recommended NRST pin protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 114
Figure 39. I2C bus AC waveforms and measurement circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 117
DocID022152 Rev 4 9/185
STM32F405xx, STM32F407xx List of figures
Figure 40. SPI timing diagram - slave mode and CPHA = 0 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120
Figure 41. SPI timing diagram - slave mode and CPHA = 1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120
Figure 42. SPI timing diagram - master mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 121
Figure 43. I2S slave timing diagram (Philips protocol) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 123
Figure 44. I2S master timing diagram (Philips protocol)(1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 123
Figure 45. USB OTG FS timings: definition of data signal rise and fall time . . . . . . . . . . . . . . . . . . . 124
Figure 46. ULPI timing diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 126
Figure 47. Ethernet SMI timing diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 127
Figure 48. Ethernet RMII timing diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 127
Figure 49. Ethernet MII timing diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 128
Figure 50. ADC accuracy characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 131
Figure 51. Typical connection diagram using the ADC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 132
Figure 52. Power supply and reference decoupling (VREF+ not connected to VDDA). . . . . . . . . . . . . 133
Figure 53. Power supply and reference decoupling (VREF+ connected to VDDA). . . . . . . . . . . . . . . . 133
Figure 54. 12-bit buffered /non-buffered DAC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 137
Figure 55. Asynchronous non-multiplexed SRAM/PSRAM/NOR read waveforms . . . . . . . . . . . . . . 138
Figure 56. Asynchronous non-multiplexed SRAM/PSRAM/NOR write waveforms . . . . . . . . . . . . . . 139
Figure 57. Asynchronous multiplexed PSRAM/NOR read waveforms. . . . . . . . . . . . . . . . . . . . . . . . 140
Figure 58. Asynchronous multiplexed PSRAM/NOR write waveforms . . . . . . . . . . . . . . . . . . . . . . . 141
Figure 59. Synchronous multiplexed NOR/PSRAM read timings . . . . . . . . . . . . . . . . . . . . . . . . . . . 143
Figure 60. Synchronous multiplexed PSRAM write timings. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 144
Figure 61. Synchronous non-multiplexed NOR/PSRAM read timings . . . . . . . . . . . . . . . . . . . . . . . . 145
Figure 62. Synchronous non-multiplexed PSRAM write timings . . . . . . . . . . . . . . . . . . . . . . . . . . . . 146
Figure 63. PC Card/CompactFlash controller waveforms for common memory read access . . . . . . 148
Figure 64. PC Card/CompactFlash controller waveforms for common memory write access . . . . . . 148
Figure 65. PC Card/CompactFlash controller waveforms for attribute memory read
access. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 149
Figure 66. PC Card/CompactFlash controller waveforms for attribute memory write
access. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150
Figure 67. PC Card/CompactFlash controller waveforms for I/O space read access . . . . . . . . . . . . 150
Figure 68. PC Card/CompactFlash controller waveforms for I/O space write access . . . . . . . . . . . . 151
Figure 69. NAND controller waveforms for read access . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 153
Figure 70. NAND controller waveforms for write access . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 153
Figure 71. NAND controller waveforms for common memory read access . . . . . . . . . . . . . . . . . . . . 154
Figure 72. NAND controller waveforms for common memory write access. . . . . . . . . . . . . . . . . . . . 154
Figure 73. DCMI timing diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 155
Figure 74. SDIO high-speed mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 156
Figure 75. SD default mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 157
Figure 76. WLCSP90 - 0.400 mm pitch wafer level chip size package outline . . . . . . . . . . . . . . . . . 159
Figure 77. LQFP64 – 10 x 10 mm 64 pin low-profile quad flat package outline . . . . . . . . . . . . . . . . 160
Figure 78. LQFP64 recommended footprint . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 161
Figure 79. LQFP100, 14 x 14 mm 100-pin low-profile quad flat package outline . . . . . . . . . . . . . . . 162
Figure 80. LQFP100 recommended footprint . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 163
Figure 81. LQFP144, 20 x 20 mm, 144-pin low-profile quad flat package outline . . . . . . . . . . . . . . . 164
Figure 82. LQFP144 recommended footprint . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 165
Figure 83. UFBGA176+25 - ultra thin fine pitch ball grid array 10 × 10 × 0.6 mm,
package outline. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 166
Figure 84. LQFP176 24 x 24 mm, 176-pin low-profile quad flat package outline . . . . . . . . . . . . . . . 167
Figure 85. LQFP176 recommended footprint . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 168
Figure 86. USB controller configured as peripheral-only and used
in Full speed mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 171
Figure 87. USB controller configured as host-only and used in full speed mode. . . . . . . . . . . . . . . . 171
List of figures STM32F405xx, STM32F407xx
10/185 DocID022152 Rev 4
Figure 88. USB controller configured in dual mode and used in full speed mode . . . . . . . . . . . . . . . 172
Figure 89. USB controller configured as peripheral, host, or dual-mode
and used in high speed mode. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 173
Figure 90. MII mode using a 25 MHz crystal . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174
Figure 91. RMII with a 50 MHz oscillator . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174
Figure 92. RMII with a 25 MHz crystal and PHY with PLL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 175
DocID022152 Rev 4 11/185
STM32F405xx, STM32F407xx Introduction
1 Introduction
This datasheet provides the description of the STM32F405xx and STM32F407xx lines of
microcontrollers. For more details on the whole STMicroelectronics STM32™ family, please
refer to Section 2.1: Full compatibility throughout the family.
The STM32F405xx and STM32F407xx datasheet should be read in conjunction with the
STM32F4xx reference manual.
The reference and Flash programming manuals are both available from the
STMicroelectronics website www.st.com.
For information on the Cortex™-M4 core, please refer to the Cortex™-M4 programming
manual (PM0214) available from www.st.com.
Description STM32F405xx, STM32F407xx
12/185 DocID022152 Rev 4
2 Description
The STM32F405xx and STM32F407xx family is based on the high-performance ARM®
Cortex™-M4 32-bit RISC core operating at a frequency of up to 168 MHz. The Cortex-M4
core features a Floating point unit (FPU) single precision which supports all ARM singleprecision
data-processing instructions and data types. It also implements a full set of DSP
instructions and a memory protection unit (MPU) which enhances application security. The
Cortex-M4 core with FPU will be referred to as Cortex-M4F throughout this document.
The STM32F405xx and STM32F407xx family incorporates high-speed embedded
memories (Flash memory up to 1 Mbyte, up to 192 Kbytes of SRAM), up to 4 Kbytes of
backup SRAM, and an extensive range of enhanced I/Os and peripherals connected to two
APB buses, three AHB buses and a 32-bit multi-AHB bus matrix.
All devices offer three 12-bit ADCs, two DACs, a low-power RTC, twelve general-purpose
16-bit timers including two PWM timers for motor control, two general-purpose 32-bit timers.
a true random number generator (RNG). They also feature standard and advanced
communication interfaces.
• Up to three I2Cs
• Three SPIs, two I2Ss full duplex. To achieve audio class accuracy, the I2S peripherals
can be clocked via a dedicated internal audio PLL or via an external clock to allow
synchronization.
• Four USARTs plus two UARTs
• An USB OTG full-speed and a USB OTG high-speed with full-speed capability (with the
ULPI),
• Two CANs
• An SDIO/MMC interface
• Ethernet and the camera interface available on STM32F407xx devices only.
New advanced peripherals include an SDIO, an enhanced flexible static memory control
(FSMC) interface (for devices offered in packages of 100 pins and more), a camera
interface for CMOS sensors. Refer to Table 2: STM32F405xx and STM32F407xx: features
and peripheral counts for the list of peripherals available on each part number.
The STM32F405xx and STM32F407xx family operates in the –40 to +105 °C temperature
range from a 1.8 to 3.6 V power supply. The supply voltage can drop to 1.7 V when the
device operates in the 0 to 70 °C temperature range using an external power supply
supervisor: refer to Section : Internal reset OFF. A comprehensive set of power-saving
mode allows the design of low-power applications.
The STM32F405xx and STM32F407xx family offers devices in various packages ranging
from 64 pins to 176 pins. The set of included peripherals changes with the device chosen.
These features make the STM32F405xx and STM32F407xx microcontroller family suitable
for a wide range of applications:
• Motor drive and application control
• Medical equipment
• Industrial applications: PLC, inverters, circuit breakers
• Printers, and scanners
• Alarm systems, video intercom, and HVAC
• Home audio appliances
STM32F405xx, STM32F407xx Description
DocID022152 Rev 4 13/185
Figure 5 shows the general block diagram of the device family.
Table 2. STM32F405xx and STM32F407xx: features and peripheral counts
Peripherals STM32F405RG STM32F405OG STM32F405VG STM32F405ZG STM32F405OE STM32F407Vx STM32F407Zx STM32F407Ix
Flash memory in
Kbytes 1024 512 512 1024 512 1024 512 1024
SRAM in
Kbytes
System 192(112+16+64)
Backup 4
FSMC memory
controller No Yes(1)
Ethernet No Yes
Timers
Generalpurpose
10
Advanced
-control 2
Basic 2
IWDG Yes
WWDG Yes
RTC Yes
Random number
generator Yes
Description STM32F405xx, STM32F407xx
14/185 DocID022152 Rev 4
Communi
cation
interfaces
SPI / I2S 3/2 (full duplex)(2)
I2C 3
USART/
UART 4/2
USB
OTG FS Yes
USB
OTG HS Yes
CAN 2
SDIO Yes
Camera interface No Yes
GPIOs 51 72 82 114 72 82 114 140
12-bit ADC
Number of channels
3
16 13 16 24 13 16 24 24
12-bit DAC
Number of channels
Yes
2
Maximum CPU
frequency 168 MHz
Operating voltage 1.8 to 3.6 V(3)
Operating
temperatures
Ambient temperatures: –40 to +85 °C /–40 to +105 °C
Junction temperature: –40 to + 125 °C
Package LQFP64 WLCSP90 LQFP100 LQFP144 WLCSP90 LQFP100 LQFP144 UFBGA176
LQFP176
1. For the LQFP100 and WLCSP90 packages, only FSMC Bank1 or Bank2 are available. Bank1 can only support a multiplexed NOR/PSRAM memory using the NE1 Chip
Select. Bank2 can only support a 16- or 8-bit NAND Flash memory using the NCE2 Chip Select. The interrupt line cannot be used since Port G is not available in this
package.
2. The SPI2 and SPI3 interfaces give the flexibility to work in an exclusive way in either the SPI mode or the I2S audio mode.
3. VDD/VDDA minimum value of 1.7 V is obtained when the device operates in reduced temperature range, and with the use of an external power supply supervisor (refer to
Section : Internal reset OFF).
Table 2. STM32F405xx and STM32F407xx: features and peripheral counts
Peripherals STM32F405RG STM32F405OG STM32F405VG STM32F405ZG STM32F405OE STM32F407Vx STM32F407Zx STM32F407Ix
DocID022152 Rev 4 15/185
STM32F405xx, STM32F407xx Description
2.1 Full compatibility throughout the family
The STM32F405xx and STM32F407xx are part of the STM32F4 family. They are fully pinto-
pin, software and feature compatible with the STM32F2xx devices, allowing the user to
try different memory densities, peripherals, and performances (FPU, higher frequency) for a
greater degree of freedom during the development cycle.
The STM32F405xx and STM32F407xx devices maintain a close compatibility with the
whole STM32F10xxx family. All functional pins are pin-to-pin compatible. The
STM32F405xx and STM32F407xx, however, are not drop-in replacements for the
STM32F10xxx devices: the two families do not have the same power scheme, and so their
power pins are different. Nonetheless, transition from the STM32F10xxx to the STM32F40x
family remains simple as only a few pins are impacted.
Figure 4, Figure 3, Figure 2, and Figure 1 give compatible board designs between the
STM32F40x, STM32F2xxx, and STM32F10xxx families.
Figure 1. Compatible board design between STM32F10xx/STM32F4xx for LQFP64
31
1 16
17
32
48 33
64
49 47
VSS
VSS
VSS
VSS
0 Ω resistor or soldering bridge
present for the STM32F10xx
configuration, not present in the
STM32F4xx configuration
ai18489
Description STM32F405xx, STM32F407xx
16/185 DocID022152 Rev 4
Figure 2. Compatible board design STM32F10xx/STM32F2xx/STM32F4xx
for LQFP100 package
Figure 3. Compatible board design between STM32F10xx/STM32F2xx/STM32F4xx
for LQFP144 package
20
49
1 25
26
50
75 51
100
76 73
19
VSS
VSS
VDD
VSS
VSS
VSS
0 ΩΩ resistor or soldering bridge
present for the STM32F10xxx
configuration, not present in the
STM32F4xx configuration
ai18488c
99 (VSS)
VDD VSS
Two 0 Ω resistors connected to:
- VSS for the STM32F10xx
- VSS for the STM32F4xx
VSS for STM32F10xx
VDD for STM32F4xx
- VSS, VDD or NC for the STM32F2xx
ai18487d
31
71
1 36
37
72
108 73
144
109
VSS
0 Ω resistor or soldering bridge
present for the STM32F10xx
configuration, not present in the
STM32F4xx configuration
106
VSS
30
Two 0 Ω resistors connected to:
- VSS for the STM32F10xx
- VDD or signal from external power supply supervisor for the STM32F4xx
VDD VSS
VSS
VSS
143 (PDR_ON)
VDD VSS
VSS for STM32F10xx
VDD for STM32F4xx
- VSS, VDD or NC for the STM32F2xx
Signal from
external power
supply
supervisor
DocID022152 Rev 4 17/185
STM32F405xx, STM32F407xx Description
Figure 4. Compatible board design between STM32F2xx and STM32F4xx
for LQFP176 and BGA176 packages
MS19919V3
1 44
45
88
132 89
176
133
Two 0 Ω resistors connected to:
- VSS, VDD or NC for the STM32F2xx
- VDD or signal from external power supply supervisor for the STM32F4xx
171 (PDR_ON)
VDDVSS
Signal from external
power supply
supervisor
Description STM32F405xx, STM32F407xx
18/185 DocID022152 Rev 4
2.2 Device overview
Figure 5. STM32F40x block diagram
1. The timers connected to APB2 are clocked from TIMxCLK up to 168 MHz, while the timers connected to
APB1 are clocked from TIMxCLK either up to 84 MHz or 168 MHz, depending on TIMPRE bit configuration
in the RCC_DCKCFGR register.
2. The camera interface and ethernet are available only on STM32F407xx devices.
MS19920V3
GPIO PORT A
AHB/APB2
140 AF
PA[15:0]
TIM1 / PWM
4 compl. channels (TIM1_CH1[1:4]N,
4 channels (TIM1_CH1[1:4]ETR,
BKIN as AF
RX, TX, CK,
CTS, RTS as AF
MOSI, MISO,
SCK, NSS as AF
APB 1 30M Hz
8 analog inputs common
to the 3 ADCs
VDDREF_ADC
MOSI/SD, MISO/SD_ext, SCK/CK
NSS/WS, MCK as AF
TX, RX
DAC1_OUT
as AF
ITF
WWDG
4 KB BKPSRAM
RTC_AF1
OSC32_IN
OSC32_OUT
VDDA, VSSA
NRST
16b
SDIO / MMC D[7:0]
CMD, CK as AF
VBAT = 1.65 to 3.6 V
DMA2
SCL, SDA, SMBA as AF
JTAG & SW
ARM Cortex-M4
168 MHz
ETM NVIC
MPU
TRACECLK
TRACED[3:0]
Ethernet MAC
10/100
DMA/
FIFO
MII or RMII as AF
MDIO as AF
USB
OTG HS
DP, DM
ULPI:CK, D[7:0], DIR, STP, NXT
ID, VBUS, SOF
DMA2
8 Streams
FIFO
ART ACCEL/
CACHE
SRAM 112 KB
CLK, NE [3:0], A[23:0],
D[31:0], OEN, WEN,
NBL[3:0], NL, NREG,
NWAIT/IORDY, CD
INTN, NIIS16 as AF
RNG
Camera
interface
HSYNC, VSYNC
PUIXCLK, D[13:0]
PHY
USB
OTG FS
DP
DM
ID, VBUS, SOF
FIFO
AHB1 168 MHz
PHY
FIFO
@VDDA
@VDDA
POR/PDR
BOR
Supply
supervision
@VDDA
PVD
Int
POR
reset
XTAL 32 kHz
MAN AGT
RTC
RC HS
FCLK
RC LS
PWR
interface
IWDG
@VBAT
AWU
Reset &
clock
control
P L L1&2
PCLKx
VDD = 1.8 to 3.6 V
VSS
VCAP1, VCPA2
Voltage
regulator
3.3 to 1.2 V
VDD Power managmt
Backup register RTC_AF1
AHB bus-matrix 8S7M
LS
2 channels as AF
DAC1
DAC2
Flash
up to
1 MB
SRAM, PSRAM, NOR Flash,
PC Card (ATA), NAND Flash
External memory
controller (FSMC)
TIM6
TIM7
TIM2
TIM3
TIM4
TIM5
TIM12
TIM13
TIM14
USART2
USART3
UART4
UART5
SP3/I2S3
I2C1/SMBUS
I2C2/SMBUS
I2C3/SMBUS
bxCAN1
bxCAN2
SPI1
EXT IT. WKUP
D-BUS
FIFO
FPU
APB142 MHz (max)
SRAM 16 KB
CCM data RAM 64 KB
AHB3
AHB2 168 MHz
NJTRST, JTDI,
JTCK/SWCLK
JTDO/SWD, JTDO
I-BUS
S-BUS
DMA/
FIFO
DMA1
8 Streams
FIFO
PB[15:0]
PC[15:0]
PD[15:0]
PE[15:0]
PF[15:0]
PG[15:0]
PH[15:0]
PI[11:0]
GPIO PORT B
GPIO PORT C
GPIO PORT D
GPIO PORT E
GPIO PORT F
GPIO PORT G
GPIO PORT H
GPIO PORT I
TIM8 / PWM 16b
4 compl. channels (TIM1_CH1[1:4]N,
4 channels (TIM1_CH1[1:4]ETR,
BKIN as AF
1 channel as AF
1 channel as AF
RX, TX, CK,
CTS, RTS as AF
8 analog inputs common
to the ADC1 & 2
8 analog inputs for ADC3
DAC2_OUT
as AF
16b
16b
SCL, SDA, SMBA as AF
SCL, SDA, SMBA as AF
MOSI/SD, MISO/SD_ext, SCK/CK
NSS/WS, MCK as AF
TX, RX
RX, TX as AF
RX, TX as AF
RX, TX as AF
CTS, RTS as AF
RX, TX as AF
CTS, RTS as AF
1 channel as AF
smcard
irDA
smcard
irDA
16b
16b
16b
1 channel as AF
2 channels as AF
32b
16b
16b
32b
4 channels
4 channels, ETR as AF
4 channels, ETR as AF
4 channels, ETR as AF
DMA1
AHB/APB1
LS
OSC_IN
OSC_OUT
HCLKx
XTAL OSC
4- 16MHz
FIFO
SP2/I2S2
NIORD, IOWR, INT[2:3]
ADC3
ADC2
ADC1
Temperature sensor
IF
TIM9 16b
TIM10 16b
TIM11 16b
smcard
irDA USART1
irDA smcard USART6
APB2 84 MHz
@VDD
@VDD
@VDDA
DocID022152 Rev 4 19/185
STM32F405xx, STM32F407xx Description
2.2.1 ARM® Cortex™-M4F core with embedded Flash and SRAM
The ARM Cortex-M4F processor is the latest generation of ARM processors for embedded
systems. It was developed to provide a low-cost platform that meets the needs of MCU
implementation, with a reduced pin count and low-power consumption, while delivering
outstanding computational performance and an advanced response to interrupts.
The ARM Cortex-M4F 32-bit RISC processor features exceptional code-efficiency,
delivering the high-performance expected from an ARM core in the memory size usually
associated with 8- and 16-bit devices.
The processor supports a set of DSP instructions which allow efficient signal processing and
complex algorithm execution.
Its single precision FPU (floating point unit) speeds up software development by using
metalanguage development tools, while avoiding saturation.
The STM32F405xx and STM32F407xx family is compatible with all ARM tools and software.
Figure 5 shows the general block diagram of the STM32F40x family.
Note: Cortex-M4F is binary compatible with Cortex-M3.
2.2.2 Adaptive real-time memory accelerator (ART Accelerator™)
The ART Accelerator™ is a memory accelerator which is optimized for STM32 industrystandard
ARM® Cortex™-M4F processors. It balances the inherent performance advantage
of the ARM Cortex-M4F over Flash memory technologies, which normally requires the
processor to wait for the Flash memory at higher frequencies.
To release the processor full 210 DMIPS performance at this frequency, the accelerator
implements an instruction prefetch queue and branch cache, which increases program
execution speed from the 128-bit Flash memory. Based on CoreMark benchmark, the
performance achieved thanks to the ART accelerator is equivalent to 0 wait state program
execution from Flash memory at a CPU frequency up to 168 MHz.
2.2.3 Memory protection unit
The memory protection unit (MPU) is used to manage the CPU accesses to memory to
prevent one task to accidentally corrupt the memory or resources used by any other active
task. This memory area is organized into up to 8 protected areas that can in turn be divided
up into 8 subareas. The protection area sizes are between 32 bytes and the whole 4
gigabytes of addressable memory.
The MPU is especially helpful for applications where some critical or certified code has to be
protected against the misbehavior of other tasks. It is usually managed by an RTOS (realtime
operating system). If a program accesses a memory location that is prohibited by the
MPU, the RTOS can detect it and take action. In an RTOS environment, the kernel can
dynamically update the MPU area setting, based on the process to be executed.
The MPU is optional and can be bypassed for applications that do not need it.
2.2.4 Embedded Flash memory
The STM32F40x devices embed a Flash memory of 512 Kbytes or 1 Mbytes available for
storing programs and data.
Description STM32F405xx, STM32F407xx
20/185 DocID022152 Rev 4
2.2.5 CRC (cyclic redundancy check) calculation unit
The CRC (cyclic redundancy check) calculation unit is used to get a CRC code from a 32-bit
data word and a fixed generator polynomial.
Among other applications, CRC-based techniques are used to verify data transmission or
storage integrity. In the scope of the EN/IEC 60335-1 standard, they offer a means of
verifying the Flash memory integrity. The CRC calculation unit helps compute a software
signature during runtime, to be compared with a reference signature generated at link-time
and stored at a given memory location.
2.2.6 Embedded SRAM
All STM32F40x products embed:
• Up to 192 Kbytes of system SRAM including 64 Kbytes of CCM (core coupled memory)
data RAM
RAM memory is accessed (read/write) at CPU clock speed with 0 wait states.
• 4 Kbytes of backup SRAM
This area is accessible only from the CPU. Its content is protected against possible
unwanted write accesses, and is retained in Standby or VBAT mode.
2.2.7 Multi-AHB bus matrix
The 32-bit multi-AHB bus matrix interconnects all the masters (CPU, DMAs, Ethernet, USB
HS) and the slaves (Flash memory, RAM, FSMC, AHB and APB peripherals) and ensures a
seamless and efficient operation even when several high-speed peripherals work
simultaneously.
DocID022152 Rev 4 21/185
STM32F405xx, STM32F407xx Description
Figure 6. Multi-AHB matrix
2.2.8 DMA controller (DMA)
The devices feature two general-purpose dual-port DMAs (DMA1 and DMA2) with 8
streams each. They are able to manage memory-to-memory, peripheral-to-memory and
memory-to-peripheral transfers. They feature dedicated FIFOs for APB/AHB peripherals,
support burst transfer and are designed to provide the maximum peripheral bandwidth
(AHB/APB).
The two DMA controllers support circular buffer management, so that no specific code is
needed when the controller reaches the end of the buffer. The two DMA controllers also
have a double buffering feature, which automates the use and switching of two memory
buffers without requiring any special code.
Each stream is connected to dedicated hardware DMA requests, with support for software
trigger on each stream. Configuration is made by software and transfer sizes between
source and destination are independent.
The DMA can be used with the main peripherals:
• SPI and I2S
• I2C
• USART
• General-purpose, basic and advanced-control timers TIMx
• DAC
• SDIO
• Camera interface (DCMI)
• ADC.
ARM
Cortex-M4
GP
DMA1
GP
DMA2
MAC
Ethernet
USB OTG
HS
Bus matrix-S
S0 S1 S2 S3 S4 S5 S6 S7
ICODE
DCODE
ACCEL
Flash
memory
SRAM1
112 Kbyte
SRAM2
16 Kbyte
AHB1
peripherals
AHB2
FSMC
Static MemCtl
M0
M1
M2
M3
M4
M5
M6
I-bus
D-bus
S-bus
DMA_PI
DMA_MEM1
DMA_MEM2
DMA_P2
ETHERNET_M
USB_HS_M
ai18490c
CCM data RAM
64-Kbyte
APB1
APB2
peripherals
Description STM32F405xx, STM32F407xx
22/185 DocID022152 Rev 4
2.2.9 Flexible static memory controller (FSMC)
The FSMC is embedded in the STM32F405xx and STM32F407xx family. It has four Chip
Select outputs supporting the following modes: PCCard/Compact Flash, SRAM, PSRAM,
NOR Flash and NAND Flash.
Functionality overview:
• Write FIFO
• Maximum FSMC_CLK frequency for synchronous accesses is 60 MHz.
LCD parallel interface
The FSMC can be configured to interface seamlessly with most graphic LCD controllers. It
supports the Intel 8080 and Motorola 6800 modes, and is flexible enough to adapt to
specific LCD interfaces. This LCD parallel interface capability makes it easy to build costeffective
graphic applications using LCD modules with embedded controllers or high
performance solutions using external controllers with dedicated acceleration.
2.2.10 Nested vectored interrupt controller (NVIC)
The STM32F405xx and STM32F407xx embed a nested vectored interrupt controller able to
manage 16 priority levels, and handle up to 82 maskable interrupt channels plus the 16
interrupt lines of the Cortex™-M4F.
• Closely coupled NVIC gives low-latency interrupt processing
• Interrupt entry vector table address passed directly to the core
• Allows early processing of interrupts
• Processing of late arriving, higher-priority interrupts
• Support tail chaining
• Processor state automatically saved
• Interrupt entry restored on interrupt exit with no instruction overhead
This hardware block provides flexible interrupt management features with minimum interrupt
latency.
2.2.11 External interrupt/event controller (EXTI)
The external interrupt/event controller consists of 23 edge-detector lines used to generate
interrupt/event requests. Each line can be independently configured to select the trigger
event (rising edge, falling edge, both) and can be masked independently. A pending register
maintains the status of the interrupt requests. The EXTI can detect an external line with a
pulse width shorter than the Internal APB2 clock period. Up to 140 GPIOs can be connected
to the 16 external interrupt lines.
2.2.12 Clocks and startup
On reset the 16 MHz internal RC oscillator is selected as the default CPU clock. The
16 MHz internal RC oscillator is factory-trimmed to offer 1% accuracy over the full
temperature range. The application can then select as system clock either the RC oscillator
or an external 4-26 MHz clock source. This clock can be monitored for failure. If a failure is
detected, the system automatically switches back to the internal RC oscillator and a
software interrupt is generated (if enabled). This clock source is input to a PLL thus allowing
to increase the frequency up to 168 MHz. Similarly, full interrupt management of the PLL
DocID022152 Rev 4 23/185
STM32F405xx, STM32F407xx Description
clock entry is available when necessary (for example if an indirectly used external oscillator
fails).
Several prescalers allow the configuration of the three AHB buses, the high-speed APB
(APB2) and the low-speed APB (APB1) domains. The maximum frequency of the three AHB
buses is 168 MHz while the maximum frequency of the high-speed APB domains is
84 MHz. The maximum allowed frequency of the low-speed APB domain is 42 MHz.
The devices embed a dedicated PLL (PLLI2S) which allows to achieve audio class
performance. In this case, the I2S master clock can generate all standard sampling
frequencies from 8 kHz to 192 kHz.
2.2.13 Boot modes
At startup, boot pins are used to select one out of three boot options:
• Boot from user Flash
• Boot from system memory
• Boot from embedded SRAM
The boot loader is located in system memory. It is used to reprogram the Flash memory by
using USART1 (PA9/PA10), USART3 (PC10/PC11 or PB10/PB11), CAN2 (PB5/PB13), USB
OTG FS in Device mode (PA11/PA12) through DFU (device firmware upgrade).
2.2.14 Power supply schemes
• VDD = 1.8 to 3.6 V: external power supply for I/Os and the internal regulator (when
enabled), provided externally through VDD pins.
• VSSA, VDDA = 1.8 to 3.6 V: external analog power supplies for ADC, DAC, Reset
blocks, RCs and PLL. VDDA and VSSA must be connected to VDD and VSS, respectively.
• VBAT = 1.65 to 3.6 V: power supply for RTC, external clock 32 kHz oscillator and
backup registers (through power switch) when VDD is not present.
Refer to Figure 21: Power supply scheme for more details.
Note: VDD/VDDA minimum value of 1.7 V is obtained when the device operates in reduced
temperature range, and with the use of an external power supply supervisor (refer to
Section : Internal reset OFF).
Refer to Table 2 in order to identify the packages supporting this option.
2.2.15 Power supply supervisor
Internal reset ON
On packages embedding the PDR_ON pin, the power supply supervisor is enabled by
holding PDR_ON high. On all other packages, the power supply supervisor is always
enabled.
The device has an integrated power-on reset (POR) / power-down reset (PDR) circuitry
coupled with a Brownout reset (BOR) circuitry. At power-on, POR/PDR is always active and
ensures proper operation starting from 1.8 V. After the 1.8 V POR threshold level is
reached, the option byte loading process starts, either to confirm or modify default BOR
threshold levels, or to disable BOR permanently. Three BOR thresholds are available
through option bytes. The device remains in reset mode when VDD is below a specified
threshold, VPOR/PDR or VBOR, without the need for an external reset circuit.
Description STM32F405xx, STM32F407xx
24/185 DocID022152 Rev 4
The device also features an embedded programmable voltage detector (PVD) that monitors
the VDD/VDDA power supply and compares it to the VPVD threshold. An interrupt can be
generated when VDD/VDDA drops below the VPVD threshold and/or when VDD/VDDA is
higher than the VPVD threshold. The interrupt service routine can then generate a warning
message and/or put the MCU into a safe state. The PVD is enabled by software.
Internal reset OFF
This feature is available only on packages featuring the PDR_ON pin. The internal power-on
reset (POR) / power-down reset (PDR) circuitry is disabled with the PDR_ON pin.
An external power supply supervisor should monitor VDD and should maintain the device in
reset mode as long as VDD is below a specified threshold. PDR_ON should be connected to
this external power supply supervisor. Refer to Figure 7: Power supply supervisor
interconnection with internal reset OFF.
Figure 7. Power supply supervisor interconnection with internal reset OFF
1. PDR = 1.7 V for reduce temperature range; PDR = 1.8 V for all temperature range.
The VDD specified threshold, below which the device must be maintained under reset, is
1.8 V (see Figure 7). This supply voltage can drop to 1.7 V when the device operates in the
0 to 70 °C temperature range.
A comprehensive set of power-saving mode allows to design low-power applications.
When the internal reset is OFF, the following integrated features are no more supported:
• The integrated power-on reset (POR) / power-down reset (PDR) circuitry is disabled
• The brownout reset (BOR) circuitry is disabled
• The embedded programmable voltage detector (PVD) is disabled
• VBAT functionality is no more available and VBAT pin should be connected to VDD
All packages, except for the LQFP64 and LQFP100, allow to disable the internal reset
through the PDR_ON signal.
MS31383V3
NRST
VDD
PDR_ON
External VDD power supply supervisor
Ext. reset controller active when
VDD < 1.7 V or 1.8 V (1)
VDD
Application reset
signal (optional)
DocID022152 Rev 4 25/185
STM32F405xx, STM32F407xx Description
Figure 8. PDR_ON and NRST control with internal reset OFF
1. PDR = 1.7 V for reduce temperature range; PDR = 1.8 V for all temperature range.
2.2.16 Voltage regulator
The regulator has four operating modes:
• Regulator ON
– Main regulator mode (MR)
– Low power regulator (LPR)
– Power-down
• Regulator OFF
Regulator ON
On packages embedding the BYPASS_REG pin, the regulator is enabled by holding
BYPASS_REG low. On all other packages, the regulator is always enabled.
There are three power modes configured by software when regulator is ON:
• MR is used in the nominal regulation mode (With different voltage scaling in Run)
In Main regulator mode (MR mode), different voltage scaling are provided to reach the
best compromise between maximum frequency and dynamic power consumption.
Refer to Table 14: General operating conditions.
• LPR is used in the Stop modes
The LP regulator mode is configured by software when entering Stop mode.
• Power-down is used in Standby mode.
The Power-down mode is activated only when entering in Standby mode. The regulator
output is in high impedance and the kernel circuitry is powered down, inducing zero
consumption. The contents of the registers and SRAM are lost)
MS19009V6
VDD
time
PDR = 1.7 V or 1.8 V (1)
time
NRST
PDR_ON PDR_ON
Reset by other source than
power supply supervisor
Description STM32F405xx, STM32F407xx
26/185 DocID022152 Rev 4
Two external ceramic capacitors should be connected on VCAP_1 & VCAP_2 pin. Refer to
Figure 21: Power supply scheme and Figure 16: VCAP_1/VCAP_2 operating conditions.
All packages have regulator ON feature.
Regulator OFF
This feature is available only on packages featuring the BYPASS_REG pin. The regulator is
disabled by holding BYPASS_REG high. The regulator OFF mode allows to supply
externally a V12 voltage source through VCAP_1 and VCAP_2 pins.
Since the internal voltage scaling is not manage internally, the external voltage value must
be aligned with the targetted maximum frequency. Refer to Table 14: General operating
conditions.
The two 2.2 μF ceramic capacitors should be replaced by two 100 nF decoupling
capacitors.
Refer to Figure 21: Power supply scheme
When the regulator is OFF, there is no more internal monitoring on V12. An external power
supply supervisor should be used to monitor the V12 of the logic power domain. PA0 pin
should be used for this purpose, and act as power-on reset on V12 power domain.
In regulator OFF mode the following features are no more supported:
• PA0 cannot be used as a GPIO pin since it allows to reset a part of the V12 logic power
domain which is not reset by the NRST pin.
• As long as PA0 is kept low, the debug mode cannot be used under power-on reset. As
a consequence, PA0 and NRST pins must be managed separately if the debug
connection under reset or pre-reset is required.
Figure 9. Regulator OFF
ai18498V4
External VCAP_1/2 power
supply supervisor
Ext. reset controller active
when VCAP_1/2 < Min V12
V12
VCAP_1
VCAP_2
BYPASS_REG
VDD
PA0 NRST
Application reset
signal (optional)
VDD
V12
DocID022152 Rev 4 27/185
STM32F405xx, STM32F407xx Description
The following conditions must be respected:
• VDD should always be higher than VCAP_1 and VCAP_2 to avoid current injection
between power domains.
• If the time for VCAP_1 and VCAP_2 to reach V12 minimum value is faster than the time for
VDD to reach 1.8 V, then PA0 should be kept low to cover both conditions: until VCAP_1
and VCAP_2 reach V12 minimum value and until VDD reaches 1.8 V (see Figure 10).
• Otherwise, if the time for VCAP_1 and VCAP_2 to reach V12 minimum value is slower
than the time for VDD to reach 1.8 V, then PA0 could be asserted low externally (see
Figure 11).
• If VCAP_1 and VCAP_2 go below V12 minimum value and VDD is higher than 1.8 V, then
a reset must be asserted on PA0 pin.
Note: The minimum value of V12 depends on the maximum frequency targeted in the application
(see Table 14: General operating conditions).
Figure 10. Startup in regulator OFF mode: slow VDD slope
- power-down reset risen after VCAP_1/VCAP_2 stabilization
1. This figure is valid both whatever the internal reset mode (onON or OFFoff).
2. PDR = 1.7 V for reduced temperature range; PDR = 1.8 V for all temperature ranges.
ai18491e
VDD
time
Min V12
PDR = 1.7 V or 1.8 V (2)
VCAP_1/VCAP_2 V12
NRST
time
Description STM32F405xx, STM32F407xx
28/185 DocID022152 Rev 4
Figure 11. Startup in regulator OFF mode: fast VDD slope
- power-down reset risen before VCAP_1/VCAP_2 stabilization
1. This figure is valid both whatever the internal reset mode (onON or offOFF).
2. PDR = 1.7 V for a reduced temperature range; PDR = 1.8 V for all temperature ranges.
2.2.17 Regulator ON/OFF and internal reset ON/OFF availability
2.2.18 Real-time clock (RTC), backup SRAM and backup registers
The backup domain of the STM32F405xx and STM32F407xx includes:
• The real-time clock (RTC)
• 4 Kbytes of backup SRAM
• 20 backup registers
The real-time clock (RTC) is an independent BCD timer/counter. Dedicated registers contain
the second, minute, hour (in 12/24 hour), week day, date, month, year, in BCD (binarycoded
decimal) format. Correction for 28, 29 (leap year), 30, and 31 day of the month are
performed automatically. The RTC provides a programmable alarm and programmable
periodic interrupts with wakeup from Stop and Standby modes. The sub-seconds value is
also available in binary format.
It is clocked by a 32.768 kHz external crystal, resonator or oscillator, the internal low-power
RC oscillator or the high-speed external clock divided by 128. The internal low-speed RC
VDD
time
Min V12
VCAP_1/VCAP_2
V12
PA0 asserted externally
NRST
time ai18492d
PDR = 1.7 V or 1.8 V (2)
Table 3. Regulator ON/OFF and internal reset ON/OFF availability
Regulator ON Regulator OFF Internal reset ON Internal reset
OFF
LQFP64
LQFP100
Yes No
Yes No
LQFP144
LQFP176 Yes
PDR_ON set to
VDD
Yes
PDR_ON
connected to an
external power
supply supervisor
WLCSP90
UFBGA176
Yes
BYPASS_REG set
to VSS
Yes
BYPASS_REG set
to VDD
DocID022152 Rev 4 29/185
STM32F405xx, STM32F407xx Description
has a typical frequency of 32 kHz. The RTC can be calibrated using an external 512 Hz
output to compensate for any natural quartz deviation.
Two alarm registers are used to generate an alarm at a specific time and calendar fields can
be independently masked for alarm comparison. To generate a periodic interrupt, a 16-bit
programmable binary auto-reload downcounter with programmable resolution is available
and allows automatic wakeup and periodic alarms from every 120 μs to every 36 hours.
A 20-bit prescaler is used for the time base clock. It is by default configured to generate a
time base of 1 second from a clock at 32.768 kHz.
The 4-Kbyte backup SRAM is an EEPROM-like memory area. It can be used to store data
which need to be retained in VBAT and standby mode. This memory area is disabled by
default to minimize power consumption (see Section 2.2.19: Low-power modes). It can be
enabled by software.
The backup registers are 32-bit registers used to store 80 bytes of user application data
when VDD power is not present. Backup registers are not reset by a system, a power reset,
or when the device wakes up from the Standby mode (see Section 2.2.19: Low-power
modes).
Additional 32-bit registers contain the programmable alarm subseconds, seconds, minutes,
hours, day, and date.
Like backup SRAM, the RTC and backup registers are supplied through a switch that is
powered either from the VDD supply when present or from the VBAT pin.
2.2.19 Low-power modes
The STM32F405xx and STM32F407xx support three low-power modes to achieve the best
compromise between low power consumption, short startup time and available wakeup
sources:
• Sleep mode
In Sleep mode, only the CPU is stopped. All peripherals continue to operate and can
wake up the CPU when an interrupt/event occurs.
• Stop mode
The Stop mode achieves the lowest power consumption while retaining the contents of
SRAM and registers. All clocks in the V12 domain are stopped, the PLL, the HSI RC
and the HSE crystal oscillators are disabled. The voltage regulator can also be put
either in normal or in low-power mode.
The device can be woken up from the Stop mode by any of the EXTI line (the EXTI line
source can be one of the 16 external lines, the PVD output, the RTC alarm / wakeup /
tamper / time stamp events, the USB OTG FS/HS wakeup or the Ethernet wakeup).
• Standby mode
The Standby mode is used to achieve the lowest power consumption. The internal
voltage regulator is switched off so that the entire V12 domain is powered off. The PLL,
the HSI RC and the HSE crystal oscillators are also switched off. After entering
Description STM32F405xx, STM32F407xx
30/185 DocID022152 Rev 4
Standby mode, the SRAM and register contents are lost except for registers in the
backup domain and the backup SRAM when selected.
The device exits the Standby mode when an external reset (NRST pin), an IWDG reset,
a rising edge on the WKUP pin, or an RTC alarm / wakeup / tamper /time stamp event
occurs.
The standby mode is not supported when the embedded voltage regulator is bypassed
and the V12 domain is controlled by an external power.
2.2.20 VBAT operation
The VBAT pin allows to power the device VBAT domain from an external battery, an external
supercapacitor, or from VDD when no external battery and an external supercapacitor are
present.
VBAT operation is activated when VDD is not present.
The VBAT pin supplies the RTC, the backup registers and the backup SRAM.
Note: When the microcontroller is supplied from VBAT, external interrupts and RTC alarm/events
do not exit it from VBAT operation.
When PDR_ON pin is not connected to VDD (internal reset OFF), the VBAT functionality is no
more available and VBAT pin should be connected to VDD.
2.2.21 Timers and watchdogs
The STM32F405xx and STM32F407xx devices include two advanced-control timers, eight
general-purpose timers, two basic timers and two watchdog timers.
All timer counters can be frozen in debug mode.
Table 4 compares the features of the advanced-control, general-purpose and basic timers.
Table 4. Timer feature comparison
Timer
type Timer
Counter
resolutio
n
Counter
type
Prescaler
factor
DMA
request
generatio
n
Capture/
compare
channels
Complementar
y output
Max
interface
clock
(MHz)
Max
timer
clock
(MHz)
Advanced
-control
TIM1,
TIM8 16-bit
Up,
Down,
Up/dow
n
Any integer
between 1
and 65536
Yes 4 Yes 84 168
DocID022152 Rev 4 31/185
STM32F405xx, STM32F407xx Description
Advanced-control timers (TIM1, TIM8)
The advanced-control timers (TIM1, TIM8) can be seen as three-phase PWM generators
multiplexed on 6 channels. They have complementary PWM outputs with programmable
inserted dead times. They can also be considered as complete general-purpose timers.
Their 4 independent channels can be used for:
• Input capture
• Output compare
• PWM generation (edge- or center-aligned modes)
• One-pulse mode output
If configured as standard 16-bit timers, they have the same features as the general-purpose
TIMx timers. If configured as 16-bit PWM generators, they have full modulation capability (0-
100%).
The advanced-control timer can work together with the TIMx timers via the Timer Link
feature for synchronization or event chaining.
TIM1 and TIM8 support independent DMA request generation.
General
purpose
TIM2,
TIM5 32-bit
Up,
Down,
Up/dow
n
Any integer
between 1
and 65536
Yes 4 No 42 84
TIM3,
TIM4 16-bit
Up,
Down,
Up/dow
n
Any integer
between 1
and 65536
Yes 4 No 42 84
TIM9 16-bit Up
Any integer
between 1
and 65536
No 2 No 84 168
TIM10
,
TIM11
16-bit Up
Any integer
between 1
and 65536
No 1 No 84 168
TIM12 16-bit Up
Any integer
between 1
and 65536
No 2 No 42 84
TIM13
,
TIM14
16-bit Up
Any integer
between 1
and 65536
No 1 No 42 84
Basic TIM6,
TIM7 16-bit Up
Any integer
between 1
and 65536
Yes 0 No 42 84
Table 4. Timer feature comparison (continued)
Timer
type Timer
Counter
resolutio
n
Counter
type
Prescaler
factor
DMA
request
generatio
n
Capture/
compare
channels
Complementar
y output
Max
interface
clock
(MHz)
Max
timer
clock
(MHz)
Description STM32F405xx, STM32F407xx
32/185 DocID022152 Rev 4
General-purpose timers (TIMx)
There are ten synchronizable general-purpose timers embedded in the STM32F40x devices
(see Table 4 for differences).
• TIM2, TIM3, TIM4, TIM5
The STM32F40x include 4 full-featured general-purpose timers: TIM2, TIM5, TIM3,
and TIM4.The TIM2 and TIM5 timers are based on a 32-bit auto-reload
up/downcounter and a 16-bit prescaler. The TIM3 and TIM4 timers are based on a 16-
bit auto-reload up/downcounter and a 16-bit prescaler. They all feature 4 independent
channels for input capture/output compare, PWM or one-pulse mode output. This gives
up to 16 input capture/output compare/PWMs on the largest packages.
The TIM2, TIM3, TIM4, TIM5 general-purpose timers can work together, or with the
other general-purpose timers and the advanced-control timers TIM1 and TIM8 via the
Timer Link feature for synchronization or event chaining.
Any of these general-purpose timers can be used to generate PWM outputs.
TIM2, TIM3, TIM4, TIM5 all have independent DMA request generation. They are
capable of handling quadrature (incremental) encoder signals and the digital outputs
from 1 to 4 hall-effect sensors.
• TIM9, TIM10, TIM11, TIM12, TIM13, and TIM14
These timers are based on a 16-bit auto-reload upcounter and a 16-bit prescaler.
TIM10, TIM11, TIM13, and TIM14 feature one independent channel, whereas TIM9
and TIM12 have two independent channels for input capture/output compare, PWM or
one-pulse mode output. They can be synchronized with the TIM2, TIM3, TIM4, TIM5
full-featured general-purpose timers. They can also be used as simple time bases.
Basic timers TIM6 and TIM7
These timers are mainly used for DAC trigger and waveform generation. They can also be
used as a generic 16-bit time base.
TIM6 and TIM7 support independent DMA request generation.
Independent watchdog
The independent watchdog is based on a 12-bit downcounter and 8-bit prescaler. It is
clocked from an independent 32 kHz internal RC and as it operates independently from the
main clock, it can operate in Stop and Standby modes. It can be used either as a watchdog
to reset the device when a problem occurs, or as a free-running timer for application timeout
management. It is hardware- or software-configurable through the option bytes.
Window watchdog
The window watchdog is based on a 7-bit downcounter that can be set as free-running. It
can be used as a watchdog to reset the device when a problem occurs. It is clocked from
the main clock. It has an early warning interrupt capability and the counter can be frozen in
debug mode.
DocID022152 Rev 4 33/185
STM32F405xx, STM32F407xx Description
SysTick timer
This timer is dedicated to real-time operating systems, but could also be used as a standard
downcounter. It features:
• A 24-bit downcounter
• Autoreload capability
• Maskable system interrupt generation when the counter reaches 0
• Programmable clock source.
2.2.22 Inter-integrated circuit interface (I²C)
Up to three I²C bus interfaces can operate in multimaster and slave modes. They can
support the Standard-mode (up to 100 kHz) and Fast-mode (up to 400 kHz) . They support
the 7/10-bit addressing mode and the 7-bit dual addressing mode (as slave). A hardware
CRC generation/verification is embedded.
They can be served by DMA and they support SMBus 2.0/PMBus.
2.2.23 Universal synchronous/asynchronous receiver transmitters (USART)
The STM32F405xx and STM32F407xx embed four universal synchronous/asynchronous
receiver transmitters (USART1, USART2, USART3 and USART6) and two universal
asynchronous receiver transmitters (UART4 and UART5).
These six interfaces provide asynchronous communication, IrDA SIR ENDEC support,
multiprocessor communication mode, single-wire half-duplex communication mode and
have LIN Master/Slave capability. The USART1 and USART6 interfaces are able to
communicate at speeds of up to 10.5 Mbit/s. The other available interfaces communicate at
up to 5.25 Mbit/s.
USART1, USART2, USART3 and USART6 also provide hardware management of the CTS
and RTS signals, Smart Card mode (ISO 7816 compliant) and SPI-like communication
capability. All interfaces can be served by the DMA controller.
Description STM32F405xx, STM32F407xx
34/185 DocID022152 Rev 4
2.2.24 Serial peripheral interface (SPI)
The STM32F40x feature up to three SPIs in slave and master modes in full-duplex and
simplex communication modes. SPI1 can communicate at up to 42 Mbits/s, SPI2 and SPI3
can communicate at up to 21 Mbit/s. The 3-bit prescaler gives 8 master mode frequencies
and the frame is configurable to 8 bits or 16 bits. The hardware CRC generation/verification
supports basic SD Card/MMC modes. All SPIs can be served by the DMA controller.
The SPI interface can be configured to operate in TI mode for communications in master
mode and slave mode.
2.2.25 Inter-integrated sound (I2S)
Two standard I2S interfaces (multiplexed with SPI2 and SPI3) are available. They can be
operated in master or slave mode, in full duplex and half-duplex communication modes, and
can be configured to operate with a 16-/32-bit resolution as an input or output channel.
Audio sampling frequencies from 8 kHz up to 192 kHz are supported. When either or both of
the I2S interfaces is/are configured in master mode, the master clock can be output to the
external DAC/CODEC at 256 times the sampling frequency.
All I2Sx can be served by the DMA controller.
2.2.26 Audio PLL (PLLI2S)
The devices feature an additional dedicated PLL for audio I2S application. It allows to
achieve error-free I2S sampling clock accuracy without compromising on the CPU
performance, while using USB peripherals.
Table 5. USART feature comparison
USART
name
Standard
features
Modem
(RTS/
CTS)
LIN SPI
master irDA Smartcard
(ISO 7816)
Max. baud rate
in Mbit/s
(oversampling
by 16)
Max. baud rate
in Mbit/s
(oversampling
by 8)
APB
mapping
USART1 X X X X X X 5.25 10.5
APB2
(max.
84 MHz)
USART2 X X X X X X 2.62 5.25
APB1
(max.
42 MHz)
USART3 X X X X X X 2.62 5.25
APB1
(max.
42 MHz)
UART4 X - X - X - 2.62 5.25
APB1
(max.
42 MHz)
UART5 X - X - X - 2.62 5.25
APB1
(max.
42 MHz)
USART6 X X X X X X 5.25 10.5
APB2
(max.
84 MHz)
DocID022152 Rev 4 35/185
STM32F405xx, STM32F407xx Description
The PLLI2S configuration can be modified to manage an I2S sample rate change without
disabling the main PLL (PLL) used for CPU, USB and Ethernet interfaces.
The audio PLL can be programmed with very low error to obtain sampling rates ranging
from 8 KHz to 192 KHz.
In addition to the audio PLL, a master clock input pin can be used to synchronize the I2S
flow with an external PLL (or Codec output).
2.2.27 Secure digital input/output interface (SDIO)
An SD/SDIO/MMC host interface is available, that supports MultiMediaCard System
Specification Version 4.2 in three different databus modes: 1-bit (default), 4-bit and 8-bit.
The interface allows data transfer at up to 48 MHz, and is compliant with the SD Memory
Card Specification Version 2.0.
The SDIO Card Specification Version 2.0 is also supported with two different databus
modes: 1-bit (default) and 4-bit.
The current version supports only one SD/SDIO/MMC4.2 card at any one time and a stack
of MMC4.1 or previous.
In addition to SD/SDIO/MMC, this interface is fully compliant with the CE-ATA digital
protocol Rev1.1.
2.2.28 Ethernet MAC interface with dedicated DMA and IEEE 1588 support
Peripheral available only on the STM32F407xx devices.
The STM32F407xx devices provide an IEEE-802.3-2002-compliant media access controller
(MAC) for ethernet LAN communications through an industry-standard mediumindependent
interface (MII) or a reduced medium-independent interface (RMII). The
STM32F407xx requires an external physical interface device (PHY) to connect to the
physical LAN bus (twisted-pair, fiber, etc.). the PHY is connected to the STM32F407xx MII
port using 17 signals for MII or 9 signals for RMII, and can be clocked using the 25 MHz
(MII) from the STM32F407xx.
The STM32F407xx includes the following features:
• Supports 10 and 100 Mbit/s rates
• Dedicated DMA controller allowing high-speed transfers between the dedicated SRAM
and the descriptors (see the STM32F40x reference manual for details)
• Tagged MAC frame support (VLAN support)
• Half-duplex (CSMA/CD) and full-duplex operation
• MAC control sublayer (control frames) support
• 32-bit CRC generation and removal
• Several address filtering modes for physical and multicast address (multicast and
group addresses)
• 32-bit status code for each transmitted or received frame
• Internal FIFOs to buffer transmit and receive frames. The transmit FIFO and the
receive FIFO are both 2 Kbytes.
• Supports hardware PTP (precision time protocol) in accordance with IEEE 1588 2008
(PTP V2) with the time stamp comparator connected to the TIM2 input
• Triggers interrupt when system time becomes greater than target time
Description STM32F405xx, STM32F407xx
36/185 DocID022152 Rev 4
2.2.29 Controller area network (bxCAN)
The two CANs are compliant with the 2.0A and B (active) specifications with a bitrate up to 1
Mbit/s. They can receive and transmit standard frames with 11-bit identifiers as well as
extended frames with 29-bit identifiers. Each CAN has three transmit mailboxes, two receive
FIFOS with 3 stages and 28 shared scalable filter banks (all of them can be used even if one
CAN is used). 256 bytes of SRAM are allocated for each CAN.
2.2.30 Universal serial bus on-the-go full-speed (OTG_FS)
The STM32F405xx and STM32F407xx embed an USB OTG full-speed device/host/OTG
peripheral with integrated transceivers. The USB OTG FS peripheral is compliant with the
USB 2.0 specification and with the OTG 1.0 specification. It has software-configurable
endpoint setting and supports suspend/resume. The USB OTG full-speed controller
requires a dedicated 48 MHz clock that is generated by a PLL connected to the HSE
oscillator. The major features are:
• Combined Rx and Tx FIFO size of 320 × 35 bits with dynamic FIFO sizing
• Supports the session request protocol (SRP) and host negotiation protocol (HNP)
• 4 bidirectional endpoints
• 8 host channels with periodic OUT support
• HNP/SNP/IP inside (no need for any external resistor)
• For OTG/Host modes, a power switch is needed in case bus-powered devices are
connected
2.2.31 Universal serial bus on-the-go high-speed (OTG_HS)
The STM32F405xx and STM32F407xx devices embed a USB OTG high-speed (up to
480 Mb/s) device/host/OTG peripheral. The USB OTG HS supports both full-speed and
high-speed operations. It integrates the transceivers for full-speed operation (12 MB/s) and
features a UTMI low-pin interface (ULPI) for high-speed operation (480 MB/s). When using
the USB OTG HS in HS mode, an external PHY device connected to the ULPI is required.
The USB OTG HS peripheral is compliant with the USB 2.0 specification and with the OTG
1.0 specification. It has software-configurable endpoint setting and supports
suspend/resume. The USB OTG full-speed controller requires a dedicated 48 MHz clock
that is generated by a PLL connected to the HSE oscillator.
The major features are:
• Combined Rx and Tx FIFO size of 1 Kbit × 35 with dynamic FIFO sizing
• Supports the session request protocol (SRP) and host negotiation protocol (HNP)
• 6 bidirectional endpoints
• 12 host channels with periodic OUT support
• Internal FS OTG PHY support
• External HS or HS OTG operation supporting ULPI in SDR mode. The OTG PHY is
connected to the microcontroller ULPI port through 12 signals. It can be clocked using
the 60 MHz output.
• Internal USB DMA
• HNP/SNP/IP inside (no need for any external resistor)
• for OTG/Host modes, a power switch is needed in case bus-powered devices are
connected
DocID022152 Rev 4 37/185
STM32F405xx, STM32F407xx Description
2.2.32 Digital camera interface (DCMI)
The camera interface is not available in STM32F405xx devices.
STM32F407xx products embed a camera interface that can connect with camera modules
and CMOS sensors through an 8-bit to 14-bit parallel interface, to receive video data. The
camera interface can sustain a data transfer rate up to 54 Mbyte/s at 54 MHz. It features:
• Programmable polarity for the input pixel clock and synchronization signals
• Parallel data communication can be 8-, 10-, 12- or 14-bit
• Supports 8-bit progressive video monochrome or raw bayer format, YCbCr 4:2:2
progressive video, RGB 565 progressive video or compressed data (like JPEG)
• Supports continuous mode or snapshot (a single frame) mode
• Capability to automatically crop the image
2.2.33 Random number generator (RNG)
All STM32F405xx and STM32F407xx products embed an RNG that delivers 32-bit random
numbers generated by an integrated analog circuit.
2.2.34 General-purpose input/outputs (GPIOs)
Each of the GPIO pins can be configured by software as output (push-pull or open-drain,
with or without pull-up or pull-down), as input (floating, with or without pull-up or pull-down)
or as peripheral alternate function. Most of the GPIO pins are shared with digital or analog
alternate functions. All GPIOs are high-current-capable and have speed selection to better
manage internal noise, power consumption and electromagnetic emission.
The I/O configuration can be locked if needed by following a specific sequence in order to
avoid spurious writing to the I/Os registers.
Fast I/O handling allowing maximum I/O toggling up to 84 MHz.
2.2.35 Analog-to-digital converters (ADCs)
Three 12-bit analog-to-digital converters are embedded and each ADC shares up to 16
external channels, performing conversions in the single-shot or scan mode. In scan mode,
automatic conversion is performed on a selected group of analog inputs.
Additional logic functions embedded in the ADC interface allow:
• Simultaneous sample and hold
• Interleaved sample and hold
The ADC can be served by the DMA controller. An analog watchdog feature allows very
precise monitoring of the converted voltage of one, some or all selected channels. An
interrupt is generated when the converted voltage is outside the programmed thresholds.
To synchronize A/D conversion and timers, the ADCs could be triggered by any of TIM1,
TIM2, TIM3, TIM4, TIM5, or TIM8 timer.
2.2.36 Temperature sensor
The temperature sensor has to generate a voltage that varies linearly with temperature. The
conversion range is between 1.8 V and 3.6 V. The temperature sensor is internally
Description STM32F405xx, STM32F407xx
38/185 DocID022152 Rev 4
connected to the ADC1_IN16 input channel which is used to convert the sensor output
voltage into a digital value.
As the offset of the temperature sensor varies from chip to chip due to process variation, the
internal temperature sensor is mainly suitable for applications that detect temperature
changes instead of absolute temperatures. If an accurate temperature reading is needed,
then an external temperature sensor part should be used.
2.2.37 Digital-to-analog converter (DAC)
The two 12-bit buffered DAC channels can be used to convert two digital signals into two
analog voltage signal outputs.
This dual digital Interface supports the following features:
• two DAC converters: one for each output channel
• 8-bit or 12-bit monotonic output
• left or right data alignment in 12-bit mode
• synchronized update capability
• noise-wave generation
• triangular-wave generation
• dual DAC channel independent or simultaneous conversions
• DMA capability for each channel
• external triggers for conversion
• input voltage reference VREF+
Eight DAC trigger inputs are used in the device. The DAC channels are triggered through
the timer update outputs that are also connected to different DMA streams.
2.2.38 Serial wire JTAG debug port (SWJ-DP)
The ARM SWJ-DP interface is embedded, and is a combined JTAG and serial wire debug
port that enables either a serial wire debug or a JTAG probe to be connected to the target.
Debug is performed using 2 pins only instead of 5 required by the JTAG (JTAG pins could
be re-use as GPIO with alternate function): the JTAG TMS and TCK pins are shared with
SWDIO and SWCLK, respectively, and a specific sequence on the TMS pin is used to
switch between JTAG-DP and SW-DP.
2.2.39 Embedded Trace Macrocell™
The ARM Embedded Trace Macrocell provides a greater visibility of the instruction and data
flow inside the CPU core by streaming compressed data at a very high rate from the
STM32F40x through a small number of ETM pins to an external hardware trace port
analyser (TPA) device. The TPA is connected to a host computer using USB, Ethernet, or
any other high-speed channel. Real-time instruction and data flow activity can be recorded
and then formatted for display on the host computer that runs the debugger software. TPA
hardware is commercially available from common development tool vendors.
The Embedded Trace Macrocell operates with third party debugger software tools.
DocID022152 Rev 4 39/185
STM32F405xx, STM32F407xx Pinouts and pin description
3 Pinouts and pin description
Figure 12. STM32F40x LQFP64 pinout
64 63 62 61 60 59 58 57 56 55 54 53 52 51 50 49
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
VBAT
PC14
PC15
NRST
PC0
PC1
PC2
PC3
VSSA
VDDA
PA0_WKUP
PA1
PA2
VDD
PB9
PB8
BOOT0
PB7
PB6
PB5
PB4
PB3
PD2
PC12
PC11
PC10
PA15
PA14
VDD
VCAP_2
PA13
PA12
PA11
PA10
PA9
PA8
PC9
PC8
PC7
PC6
PB15
PB14
PB13
PB12
PA3
VSS
VDD
PA4
PA5
PA6
PA7
PC4
PC5
PB0
PB1
PB2
PB10
PB11
VCAP_1
VDD
LQFP64
ai18493b
PC13
PH0
PH1
VSS
Pinouts and pin description STM32F405xx, STM32F407xx
40/185 DocID022152 Rev 4
Figure 13. STM32F40x LQFP100 pinout
100
99
98
97
96
95
94
93
92
91
90
89
88
87
86
85
84
83
82
81
80
79
78
77
76
123456789
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
75
74
73
72
71
70
69
68
67
66
65
64
63
62
61
60
59
58
57
56
55
54
53
52
51
PE2
PE3
PE4
PE5
PE6
VBAT
PC14
PC15
VSS
VDD
PH0
NRST
PC0
PC1
PC2
PC3
VDD
VSSA
VREF+
VDDA
PA0
PA1
PA2
VDD
VSS
VCAP_2
PA13
PA12
PA 11
PA10
PA9
PA8
PC9
PC8
PC7
PC6
PD15
PD14
PD13
PD12
PD11
PD10
PD9
PD8
PB15
PB14
PB13
PB12
PA3
VSS
VDD
PA4
PA5
PA6
PA7
PC4
PC5
PB0
PB1
PB2
PE7
PE8
PE9
PE10
PE11
PE12
PE13
PE14
PE15
PB10
PB11
VCAP_1
VDD
VDD
VSS
PE1
PE0
PB9
PB8
BOOT0
PB7
PB6
PB5
PB4
PB3
PD7
PD6
PD5
PD4
PD3
PD2
PD1
PD0
PC12
PC11
PC10
PA15
PA14
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
49
50
ai18495c
LQFP100
PC13
PH1
DocID022152 Rev 4 41/185
STM32F405xx, STM32F407xx Pinouts and pin description
Figure 14. STM32F40x LQFP144 pinout
VDD
PDR_ON
PE1
PE0
PB9
PB8
BOOT0
PB7
PB6
PB5
PB4
PB3
PG15
VDD
VSS
PG14
PG13
PG12
PG11
PG10
PG9
PD7
PD6
VDD
VSS
PD5
PD4
PD3
PD2
PD1
PD0
PC12
PC11
PC10
PA15
PA14
PE2 VDD PE3 VSS PE4
PE5 PA13
PE6 PA12
VBAT PA11
PC13 PA10
PC14 PA9
PC15 PA8
PF0 PC9
PF1 PC8
PF2 PC7
PF3 PC6
PF4 VDD PF5 VSS VSS PG8
VDD PG7
PF6 PG6
PF7 PG5
PF8 PG4
PF9 PG3
PF10 PG2
PH0 PD15
PH1 PD14
NRST VDD PC0 VSS PC1 PD13
PC2 PD12
PC3 PD11
VSSA
VDD PD10
PD9
VREF+ PD8
VDDA PB15
PA0 PB14
PA1 PB13
PA2 PB12
PA3
VSS
VDD
PA4
PA5
PA6
PA7
PC4
PC5
PB0
PB1
PB2
PF11
PF12
VDD
PF13
PF14
PF15
PG0
PG1
PE7
PE8
PE9
VSS
VDD
PE10
PE11
PE12
PE13
PE14
PE15
PB10
PB11
VCAP_1
VDD
144
143
142
141
140
139
138
137
136
135
134
133
132
131
130
129
128
127
126
125
124
123
122
121
109
123456789
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
108
107
106
105
104
103
102
101
100
99
98
97
96
95
94
93
92
91
90
89
88
87
86
85
84
37
38
39
40
41
42
43
44
45
46
47
48
49
50
51
52
53
54
55
56
57
58
59
60
72
LQFP144
120
119
118
117
116
115
114
113
112
111
110
61
62
63
64
65
66
67
68
69
70
71 26
27
28
29
30
31
32
33
34
35
36
83
82
81
80
79
78
77
76
75
74
73
ai18496b
VCAP_2
VSS
Pinouts and pin description STM32F405xx, STM32F407xx
42/185 DocID022152 Rev 4
Figure 15. STM32F40x LQFP176 pinout
MS19916V3
PDR_ON
PE1
PE0
PB9
PB8
BOOT0
PB7
PB6
PB5
PB4
PB3
PG15
PG14
PG13
PG12
PG11
PG10
PG9
PD7
PD6
PD5
PD4
PD3
PD2
PD1
PD0
PC12
PC11
PC10
PI7
PI6
PE2
PE3
PE4
PE5
PA13
PE6
PA12
VBAT
PA11
PI8
PA10
PC14
PA9
PC15
PA8
PF0
PC9
PF1
PC8
PF2
PC7
PF3
PC6
PF4
PF5 PG8
PG7
PF6
PG6
PF7
PG5
PF8
PG4
PF9
PG3
PF10
PG2
PH0
PD15
PH1
PD14
NRST
V
PC0
V
PC1
PD13
PC2
PD12
PC3
PD11
PD10
PD9
VREF+
PD8
PB15
PA0
PB14
PA1
PB13
PA2
PB12
PA3
PA4
PA5
PA6
PA7
PC4
PC5
PB0
PB1
PB2
PF11
PF12
VSS
PF13
PF14
PF15
PG0
PG1
PE7
PE8
PE9
PE10
PE11
PE12
PE13
PE14
PE15
PB10
PB11
176
175
174
173
172
171
170
169
168
167
166
165
164
163
162
161
160
159
158
157
156
155
154
153
141
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
132
131
130
129
128
127
126
125
124
123
122
121
120
119
118
117
116
115
114
113
112
111
110
109
108
45
46
47
48
49
50
51
52
53
54
55
56
57
58
59
60
61
62
63
64
65
66
67
68
80
LQFP176
152
151
150
149
148
147
146
145
144
143
142
69
70
71
72
73
74
75
76
77
78
79
26
27
28
29
30
31
32
33
34
35
36
107
106
105
104
103
102
101
100
99
98
89
PI4
PA15
PA14
PI3
PI2
PI5
140
139
138
137
136
135
134
133
PH4
PH5
PH6
PH7
PH8
PH9
PH10
PH11 88
81
82
83
84
85
86
87
PI1
PI0
PH15
PH14
PH13
PH12
96
95
94
93
92
91
90
97
37
38
39
40
41
42
43
44
PC13
PI9
PI10
PI11
VSS
PH2
PH3
VDD
VSS
VDD
VDDA
VSSA
VDDA
BYPASS_REG
VDD
VDD
VSS
VDD
VCAP_1
VDD
VSS
VDD
VCAP_2
VSS
VDD
VSS
VDD
VSS
VDD
VSS
VDD
VDD
VSS
VDD
VSS
VDD
DocID022152 Rev 4 43/185
STM32F405xx, STM32F407xx Pinouts and pin description
Figure 16. STM32F40x UFBGA176 ballout
1. This figure shows the package top view.
ai18497b
1 2 3 9 10 11 12 13 14 15
A PE3 PE2 PE1 PE0 PB8 PB5 PG14 PG13 PB4 PB3 PD7 PC12 PA15 PA14 PA13
B PE4 PE5 PE6 PB9 PB7 PB6 PG15 PG12 PG11 PG10 PD6 PD0 PC11 PC10 PA12
C VBAT PI7 PI6 PI5 VDD PDR_ON VDD VDD VDD PG9 PD5 PD1 PI3 PI2 PA11
D PC13 PI8 PI9 PI4 BOOT0 VSS VSS VSS PD4 PD3 PD2 PH15 PI1 PA10
E PC14 PF0 PI10 PI11 PH13 PH14 PI0 PA9
F PC15 VSS VDD PH2 VSS VSS VSS VSS VSS VSS VCAP_2 PC9 PA8
G PH0 VSS VDD PH3 VSS VSS VSS VSS VSS VSS VDD PC8 PC7
H PH1 PF2 PF1 PH4 VSS VSS VSS VSS VSS VSS VDD PG8 PC6
J NRST PF3 PF4 PH5 VSS VSS VSS VSS VSS VDD VDD PG7 PG6
K PF7 PF6 PF5 VDD VSS VSS VSS VSS VSS PH12 PG5 PG4 PG3
L PF10 PF9 PF8 BYPASS_
REG
PH11 PH10 PD15 PG2
M VSSA PC0 PC1 PC2 PC3 PB2 PG1 VSS VSS VCAP_1 PH6 PH8 PH9 PD14 PD13
N VREF- PA1 PA0 PA4 PC4 PF13 PG0 VDD VDD VDD PE13 PH7 PD12 PD11 PD10
P VREF+ PA2 PA6 PA5 PC5 PF12 PF15 PE8 PE9 PE11 PE14 PB12 PB13 PD9 PD8
R VDDA PA3 PA7 PB1 PB0 PF11 PF14 PE7 PE10 PE12 PE15 PB10 PB11 PB14 PB15
VSS
4 5 6 7 8
Pinouts and pin description STM32F405xx, STM32F407xx
44/185 DocID022152 Rev 4
Figure 17. STM32F40x WLCSP90 ballout
1. This figure shows the package bump view.
A VBAT PC13 PDR_ON PB4 PD7 PD4 PC12
B PC15 VDD PB7 PB3 PD6 PD2 PA15
C PA0 VSS PB6 PD5 PD1 PC11 PI0
D PC2 PB8 PA13
E PC3 VSS
F PH1 PA1
G NRST
H VSSA
J PA2 PA 4 PA7 PB2 PE11 PB11 PB12
MS30402V1
1
PA14
PI1
PA12
PA10 PA9
PC0 PC9 PC8
PH0
PB13
PC6 PD14
PD12
PE8 PE12
BYPASS_
REG
PD9 PD8
PE9 PB14
10 9 8 7 6 5 4 3 2
VDD
PC14
VCAP_2
PA11
PB5 PD0 PC10 PA8
VSS VDD VSS VDD PC7
VDD PE10 PE14 VCAP_1 PD15
PE13 PE15 PD10 PD11
PA3 PA6 PB1 PB10 PB15
PB9
BOOT0
VDDA PA5 PB0 PE7
Table 6. Legend/abbreviations used in the pinout table
Name Abbreviation Definition
Pin name Unless otherwise specified in brackets below the pin name, the pin function during and after
reset is the same as the actual pin name
Pin type
S Supply pin
I Input only pin
I/O Input / output pin
I/O structure
FT 5 V tolerant I/O
TTa 3.3 V tolerant I/O directly connected to ADC
B Dedicated BOOT0 pin
RST Bidirectional reset pin with embedded weak pull-up resistor
Notes Unless otherwise specified by a note, all I/Os are set as floating inputs during and after reset
Alternate
functions Functions selected through GPIOx_AFR registers
Additional
functions Functions directly selected/enabled through peripheral registers
DocID022152 Rev 4 45/185
STM32F405xx, STM32F407xx Pinouts and pin description
Table 7. STM32F40x pin and ball definitions
Pin number
Pin name
(function after
reset)(1)
Pin type
I / O structure
Notes
Alternate functions Additional functions
LQFP64
WLCSP90
LQFP100
LQFP144
UFBGA176
LQFP176
- - 1 1 A2 1 PE2 I/O FT
TRACECLK/ FSMC_A23 /
ETH_MII_TXD3 /
EVENTOUT
- - 2 2 A1 2 PE3 I/O FT TRACED0/FSMC_A19 /
EVENTOUT
- - 3 3 B1 3 PE4 I/O FT TRACED1/FSMC_A20 /
DCMI_D4/ EVENTOUT
- - 4 4 B2 4 PE5 I/O FT
TRACED2 / FSMC_A21 /
TIM9_CH1 / DCMI_D6 /
EVENTOUT
- - 5 5 B3 5 PE6 I/O FT
TRACED3 / FSMC_A22 /
TIM9_CH2 / DCMI_D7 /
EVENTOUT
1 A10 6 6 C1 6 VBAT S
- - - - D2 7 PI8 I/O FT
(2)(
3) EVENTOUT
RTC_TAMP1,
RTC_TAMP2,
RTC_TS
2 A9 7 7 D1 8 PC13 I/O FT
(2)
(3) EVENTOUT
RTC_OUT,
RTC_TAMP1,
RTC_TS
3 B10 8 8 E1 9
PC14/OSC32_IN
(PC14)
I/O FT
(2)(
3) EVENTOUT OSC32_IN(4)
4 B9 9 9 F1 10
PC15/
OSC32_OUT
(PC15)
I/O FT
(2)(
3) EVENTOUT OSC32_OUT(4)
- - - - D3 11 PI9 I/O FT CAN1_RX / EVENTOUT
- - - - E3 12 PI10 I/O FT ETH_MII_RX_ER /
EVENTOUT
- - - - E4 13 PI11 I/O FT OTG_HS_ULPI_DIR /
EVENTOUT
- - - - F2 14 VSS S
- - - - F3 15 VDD S
- - - 10 E2 16 PF0 I/O FT FSMC_A0 / I2C2_SDA /
EVENTOUT
Pinouts and pin description STM32F405xx, STM32F407xx
46/185 DocID022152 Rev 4
- - - 11 H3 17 PF1 I/O FT FSMC_A1 / I2C2_SCL /
EVENTOUT
- - - 12 H2 18 PF2 I/O FT FSMC_A2 / I2C2_SMBA /
EVENTOUT
- - - 13 J2 19 PF3 I/O FT (4) FSMC_A3/EVENTOUT ADC3_IN9
- - - 14 J3 20 PF4 I/O FT (4) FSMC_A4/EVENTOUT ADC3_IN14
- - - 15 K3 21 PF5 I/O FT (4) FSMC_A5/EVENTOUT ADC3_IN15
- C9 10 16 G2 22 VSS S
- B8 11 17 G3 23 VDD S
- - - 18 K2 24 PF6 I/O FT (4)
TIM10_CH1 /
FSMC_NIORD/
EVENTOUT
ADC3_IN4
- - - 19 K1 25 PF7 I/O FT (4) TIM11_CH1/FSMC_NREG
/ EVENTOUT ADC3_IN5
- - - 20 L3 26 PF8 I/O FT (4)
TIM13_CH1 /
FSMC_NIOWR/
EVENTOUT
ADC3_IN6
- - - 21 L2 27 PF9 I/O FT (4) TIM14_CH1 / FSMC_CD/
EVENTOUT ADC3_IN7
- - - 22 L1 28 PF10 I/O FT (4) FSMC_INTR/ EVENTOUT ADC3_IN8
5 F10 12 23 G1 29
PH0/OSC_IN
(PH0)
I/O FT EVENTOUT OSC_IN(4)
6 F9 13 24 H1 30
PH1/OSC_OUT
(PH1)
I/O FT EVENTOUT OSC_OUT(4)
7 G10 14 25 J1 31 NRST I/O RS
T
8 E10 15 26 M2 32 PC0 I/O FT (4) OTG_HS_ULPI_STP/
EVENTOUT ADC123_IN10
9 - 16 27 M3 33 PC1 I/O FT (4) ETH_MDC/ EVENTOUT ADC123_IN11
10 D10 17 28 M4 34 PC2 I/O FT (4)
SPI2_MISO /
OTG_HS_ULPI_DIR /
ETH_MII_TXD2
/I2S2ext_SD/ EVENTOUT
ADC123_IN12
Table 7. STM32F40x pin and ball definitions (continued)
Pin number
Pin name
(function after
reset)(1)
Pin type
I / O structure
Notes
Alternate functions Additional functions
LQFP64
WLCSP90
LQFP100
LQFP144
UFBGA176
LQFP176
DocID022152 Rev 4 47/185
STM32F405xx, STM32F407xx Pinouts and pin description
11 E9 18 29 M5 35 PC3 I/O FT (4)
SPI2_MOSI / I2S2_SD /
OTG_HS_ULPI_NXT /
ETH_MII_TX_CLK/
EVENTOUT
ADC123_IN13
- - 19 30 G3 36 VDD S
12 H10 20 31 M1 37 VSSA S
- - - - N1 - VREF– S
- - 21 32 P1 38 VREF+ S
13 G9 22 33 R1 39 VDDA S
14 C10 23 34 N3 40
PA0/WKUP
(PA0)
I/O FT (5)
USART2_CTS/
UART4_TX/
ETH_MII_CRS /
TIM2_CH1_ETR/
TIM5_CH1 / TIM8_ETR/
EVENTOUT
ADC123_IN0/WKUP(4
)
15 F8 24 35 N2 41 PA1 I/O FT (4)
USART2_RTS /
UART4_RX/
ETH_RMII_REF_CLK /
ETH_MII_RX_CLK /
TIM5_CH2 / TIM2_CH2/
EVENTOUT
ADC123_IN1
16 J10 25 36 P2 42 PA2 I/O FT (4)
USART2_TX/TIM5_CH3 /
TIM9_CH1 / TIM2_CH3 /
ETH_MDIO/ EVENTOUT
ADC123_IN2
- - - - F4 43 PH2 I/O FT ETH_MII_CRS/EVENTOU
T
- - - - G4 44 PH3 I/O FT ETH_MII_COL/EVENTOU
T
- - - - H4 45 PH4 I/O FT
I2C2_SCL /
OTG_HS_ULPI_NXT/
EVENTOUT
- - - - J4 46 PH5 I/O FT I2C2_SDA/ EVENTOUT
Table 7. STM32F40x pin and ball definitions (continued)
Pin number
Pin name
(function after
reset)(1)
Pin type
I / O structure
Notes
Alternate functions Additional functions
LQFP64
WLCSP90
LQFP100
LQFP144
UFBGA176
LQFP176
Pinouts and pin description STM32F405xx, STM32F407xx
48/185 DocID022152 Rev 4
17 H9 26 37 R2 47 PA3 I/O FT (4)
USART2_RX/TIM5_CH4 /
TIM9_CH2 / TIM2_CH4 /
OTG_HS_ULPI_D0 /
ETH_MII_COL/
EVENTOUT
ADC123_IN3
18 E5 27 38 - - VSS S
D9 L4 48 BYPASS_REG I FT
19 E4 28 39 K4 49 VDD S
20 J9 29 40 N4 50 PA4 I/O TTa (4)
SPI1_NSS / SPI3_NSS /
USART2_CK /
DCMI_HSYNC /
OTG_HS_SOF/ I2S3_WS/
EVENTOUT
ADC12_IN4
/DAC_OUT1
21 G8 30 41 P4 51 PA5 I/O TTa (4)
SPI1_SCK/
OTG_HS_ULPI_CK /
TIM2_CH1_ETR/
TIM8_CH1N/ EVENTOUT
ADC12_IN5/DAC_OU
T2
22 H8 31 42 P3 52 PA6 I/O FT (4)
SPI1_MISO /
TIM8_BKIN/TIM13_CH1 /
DCMI_PIXCLK /
TIM3_CH1 / TIM1_BKIN/
EVENTOUT
ADC12_IN6
23 J8 32 43 R3 53 PA7 I/O FT (4)
SPI1_MOSI/ TIM8_CH1N
/ TIM14_CH1/TIM3_CH2/
ETH_MII_RX_DV /
TIM1_CH1N /
ETH_RMII_CRS_DV/
EVENTOUT
ADC12_IN7
24 - 33 44 N5 54 PC4 I/O FT (4)
ETH_RMII_RX_D0 /
ETH_MII_RX_D0/
EVENTOUT
ADC12_IN14
25 - 34 45 P5 55 PC5 I/O FT (4)
ETH_RMII_RX_D1 /
ETH_MII_RX_D1/
EVENTOUT
ADC12_IN15
26 G7 35 46 R5 56 PB0 I/O FT (4)
TIM3_CH3 / TIM8_CH2N/
OTG_HS_ULPI_D1/
ETH_MII_RXD2 /
TIM1_CH2N/ EVENTOUT
ADC12_IN8
Table 7. STM32F40x pin and ball definitions (continued)
Pin number
Pin name
(function after
reset)(1)
Pin type
I / O structure
Notes
Alternate functions Additional functions
LQFP64
WLCSP90
LQFP100
LQFP144
UFBGA176
LQFP176
DocID022152 Rev 4 49/185
STM32F405xx, STM32F407xx Pinouts and pin description
27 H7 36 47 R4 57 PB1 I/O FT (4)
TIM3_CH4 / TIM8_CH3N/
OTG_HS_ULPI_D2/
ETH_MII_RXD3 /
TIM1_CH3N/ EVENTOUT
ADC12_IN9
28 J7 37 48 M6 58
PB2/BOOT1
(PB2)
I/O FT EVENTOUT
- - - 49 R6 59 PF11 I/O FT DCMI_D12/ EVENTOUT
- - - 50 P6 60 PF12 I/O FT FSMC_A6/ EVENTOUT
- - - 51 M8 61 VSS S
- - - 52 N8 62 VDD S
- - - 53 N6 63 PF13 I/O FT FSMC_A7/ EVENTOUT
- - - 54 R7 64 PF14 I/O FT FSMC_A8/ EVENTOUT
- - - 55 P7 65 PF15 I/O FT FSMC_A9/ EVENTOUT
- - - 56 N7 66 PG0 I/O FT FSMC_A10/ EVENTOUT
- - - 57 M7 67 PG1 I/O FT FSMC_A11/ EVENTOUT
- G6 38 58 R8 68 PE7 I/O FT FSMC_D4/TIM1_ETR/
EVENTOUT
- H6 39 59 P8 69 PE8 I/O FT FSMC_D5/ TIM1_CH1N/
EVENTOUT
- J6 40 60 P9 70 PE9 I/O FT FSMC_D6/TIM1_CH1/
EVENTOUT
- - - 61 M9 71 VSS S
- - - 62 N9 72 VDD S
- F6 41 63 R9 73 PE10 I/O FT FSMC_D7/TIM1_CH2N/
EVENTOUT
- J5 42 64 P10 74 PE11 I/O FT FSMC_D8/TIM1_CH2/
EVENTOUT
- H5 43 65 R10 75 PE12 I/O FT FSMC_D9/TIM1_CH3N/
EVENTOUT
- G5 44 66 N11 76 PE13 I/O FT FSMC_D10/TIM1_CH3/
EVENTOUT
Table 7. STM32F40x pin and ball definitions (continued)
Pin number
Pin name
(function after
reset)(1)
Pin type
I / O structure
Notes
Alternate functions Additional functions
LQFP64
WLCSP90
LQFP100
LQFP144
UFBGA176
LQFP176
Pinouts and pin description STM32F405xx, STM32F407xx
50/185 DocID022152 Rev 4
- F5 45 67 P11 77 PE14 I/O FT FSMC_D11/TIM1_CH4/
EVENTOUT
- G4 46 68 R11 78 PE15 I/O FT FSMC_D12/TIM1_BKIN/
EVENTOUT
29 H4 47 69 R12 79 PB10 I/O FT
SPI2_SCK / I2S2_CK /
I2C2_SCL/ USART3_TX /
OTG_HS_ULPI_D3 /
ETH_MII_RX_ER /
TIM2_CH3/ EVENTOUT
30 J4 48 70 R13 80 PB11 I/O FT
I2C2_SDA/USART3_RX/
OTG_HS_ULPI_D4 /
ETH_RMII_TX_EN/
ETH_MII_TX_EN /
TIM2_CH4/ EVENTOUT
31 F4 49 71 M10 81 VCAP_1 S
32 - 50 72 N10 82 VDD S
- - - - M11 83 PH6 I/O FT
I2C2_SMBA / TIM12_CH1
/ ETH_MII_RXD2/
EVENTOUT
- - - - N12 84 PH7 I/O FT
I2C3_SCL /
ETH_MII_RXD3/
EVENTOUT
- - - - M12 85 PH8 I/O FT
I2C3_SDA /
DCMI_HSYNC/
EVENTOUT
- - - - M13 86 PH9 I/O FT
I2C3_SMBA /
TIM12_CH2/ DCMI_D0/
EVENTOUT
- - - - L13 87 PH10 I/O FT TIM5_CH1 / DCMI_D1/
EVENTOUT
- - - - L12 88 PH11 I/O FT TIM5_CH2 / DCMI_D2/
EVENTOUT
- - - - K12 89 PH12 I/O FT TIM5_CH3 / DCMI_D3/
EVENTOUT
- - - - H12 90 VSS S
- - - - J12 91 VDD S
Table 7. STM32F40x pin and ball definitions (continued)
Pin number
Pin name
(function after
reset)(1)
Pin type
I / O structure
Notes
Alternate functions Additional functions
LQFP64
WLCSP90
LQFP100
LQFP144
UFBGA176
LQFP176
DocID022152 Rev 4 51/185
STM32F405xx, STM32F407xx Pinouts and pin description
33 J3 51 73 P12 92 PB12 I/O FT
SPI2_NSS / I2S2_WS /
I2C2_SMBA/
USART3_CK/ TIM1_BKIN
/ CAN2_RX /
OTG_HS_ULPI_D5/
ETH_RMII_TXD0 /
ETH_MII_TXD0/
OTG_HS_ID/ EVENTOUT
34 J1 52 74 P13 93 PB13 I/O FT
SPI2_SCK / I2S2_CK /
USART3_CTS/
TIM1_CH1N /CAN2_TX /
OTG_HS_ULPI_D6 /
ETH_RMII_TXD1 /
ETH_MII_TXD1/
EVENTOUT
OTG_HS_VBUS
35 J2 53 75 R14 94 PB14 I/O FT
SPI2_MISO/ TIM1_CH2N
/ TIM12_CH1 /
OTG_HS_DM/
USART3_RTS /
TIM8_CH2N/I2S2ext_SD/
EVENTOUT
36 H1 54 76 R15 95 PB15 I/O FT
SPI2_MOSI / I2S2_SD/
TIM1_CH3N / TIM8_CH3N
/ TIM12_CH2 /
OTG_HS_DP/
EVENTOUT
RTC_REFIN
- H2 55 77 P15 96 PD8 I/O FT FSMC_D13 /
USART3_TX/ EVENTOUT
- H3 56 78 P14 97 PD9 I/O FT FSMC_D14 /
USART3_RX/ EVENTOUT
- G3 57 79 N15 98 PD10 I/O FT FSMC_D15 /
USART3_CK/ EVENTOUT
- G1 58 80 N14 99 PD11 I/O FT
FSMC_CLE /
FSMC_A16/USART3_CT
S/ EVENTOUT
- G2 59 81 N13 100 PD12 I/O FT
FSMC_ALE/
FSMC_A17/TIM4_CH1 /
USART3_RTS/
EVENTOUT
Table 7. STM32F40x pin and ball definitions (continued)
Pin number
Pin name
(function after
reset)(1)
Pin type
I / O structure
Notes
Alternate functions Additional functions
LQFP64
WLCSP90
LQFP100
LQFP144
UFBGA176
LQFP176
Pinouts and pin description STM32F405xx, STM32F407xx
52/185 DocID022152 Rev 4
- - 60 82 M15 101 PD13 I/O FT FSMC_A18/TIM4_CH2/
EVENTOUT
- - - 83 - 102 VSS S
- - - 84 J13 103 VDD S
- F2 61 85 M14 104 PD14 I/O FT FSMC_D0/TIM4_CH3/
EVENTOUT/ EVENTOUT
- F1 62 86 L14 105 PD15 I/O FT FSMC_D1/TIM4_CH4/
EVENTOUT
- - - 87 L15 106 PG2 I/O FT FSMC_A12/ EVENTOUT
- - - 88 K15 107 PG3 I/O FT FSMC_A13/ EVENTOUT
- - - 89 K14 108 PG4 I/O FT FSMC_A14/ EVENTOUT
- - - 90 K13 109 PG5 I/O FT FSMC_A15/ EVENTOUT
- - - 91 J15 110 PG6 I/O FT FSMC_INT2/ EVENTOUT
- - - 92 J14 111 PG7 I/O FT
FSMC_INT3
/USART6_CK/
EVENTOUT
- - - 93 H14 112 PG8 I/O FT
USART6_RTS /
ETH_PPS_OUT/
EVENTOUT
- - - 94 G12 113 VSS S
- - - 95 H13 114 VDD S
37 F3 63 96 H15 115 PC6 I/O FT
I2S2_MCK /
TIM8_CH1/SDIO_D6 /
USART6_TX /
DCMI_D0/TIM3_CH1/
EVENTOUT
38 E1 64 97 G15 116 PC7 I/O FT
I2S3_MCK /
TIM8_CH2/SDIO_D7 /
USART6_RX /
DCMI_D1/TIM3_CH2/
EVENTOUT
39 E2 65 98 G14 117 PC8 I/O FT
TIM8_CH3/SDIO_D0
/TIM3_CH3/ USART6_CK
/ DCMI_D2/ EVENTOUT
Table 7. STM32F40x pin and ball definitions (continued)
Pin number
Pin name
(function after
reset)(1)
Pin type
I / O structure
Notes
Alternate functions Additional functions
LQFP64
WLCSP90
LQFP100
LQFP144
UFBGA176
LQFP176
DocID022152 Rev 4 53/185
STM32F405xx, STM32F407xx Pinouts and pin description
40 E3 66 99 F14 118 PC9 I/O FT
I2S_CKIN/ MCO2 /
TIM8_CH4/SDIO_D1 /
/I2C3_SDA / DCMI_D3 /
TIM3_CH4/ EVENTOUT
41 D1 67 100 F15 119 PA8 I/O FT
MCO1 / USART1_CK/
TIM1_CH1/ I2C3_SCL/
OTG_FS_SOF/
EVENTOUT
42 D2 68 101 E15 120 PA9 I/O FT
USART1_TX/ TIM1_CH2 /
I2C3_SMBA / DCMI_D0/
EVENTOUT
OTG_FS_VBUS
43 D3 69 102 D15 121 PA10 I/O FT
USART1_RX/ TIM1_CH3/
OTG_FS_ID/DCMI_D1/
EVENTOUT
44 C1 70 103 C15 122 PA11 I/O FT
USART1_CTS / CAN1_RX
/ TIM1_CH4 /
OTG_FS_DM/
EVENTOUT
45 C2 71 104 B15 123 PA12 I/O FT
USART1_RTS /
CAN1_TX/ TIM1_ETR/
OTG_FS_DP/
EVENTOUT
46 D4 72 105 A15 124
PA13
(JTMS-SWDIO)
I/O FT JTMS-SWDIO/
EVENTOUT
47 B1 73 106 F13 125 VCAP_2 S
- E7 74 107 F12 126 VSS S
48 E6 75 108 G13 127 VDD S
- - - - E12 128 PH13 I/O FT TIM8_CH1N / CAN1_TX/
EVENTOUT
- - - - E13 129 PH14 I/O FT TIM8_CH2N / DCMI_D4/
EVENTOUT
- - - - D13 130 PH15 I/O FT TIM8_CH3N / DCMI_D11/
EVENTOUT
- C3 - - E14 131 PI0 I/O FT
TIM5_CH4 / SPI2_NSS /
I2S2_WS / DCMI_D13/
EVENTOUT
Table 7. STM32F40x pin and ball definitions (continued)
Pin number
Pin name
(function after
reset)(1)
Pin type
I / O structure
Notes
Alternate functions Additional functions
LQFP64
WLCSP90
LQFP100
LQFP144
UFBGA176
LQFP176
Pinouts and pin description STM32F405xx, STM32F407xx
54/185 DocID022152 Rev 4
- B2 - - D14 132 PI1 I/O FT SPI2_SCK / I2S2_CK /
DCMI_D8/ EVENTOUT
- - - - C14 133 PI2 I/O FT
TIM8_CH4 /SPI2_MISO /
DCMI_D9 / I2S2ext_SD/
EVENTOUT
- - - - C13 134 PI3 I/O FT
TIM8_ETR / SPI2_MOSI /
I2S2_SD / DCMI_D10/
EVENTOUT
- - - - D9 135 VSS S
- - - - C9 136 VDD S
49 A2 76 109 A14 137
PA14
(JTCK/SWCLK)
I/O FT JTCK-SWCLK/
EVENTOUT
50 B3 77 110 A13 138
PA15
(JTDI)
I/O FT
JTDI/ SPI3_NSS/
I2S3_WS/TIM2_CH1_ET
R / SPI1_NSS /
EVENTOUT
51 D5 78 111 B14 139 PC10 I/O FT
SPI3_SCK / I2S3_CK/
UART4_TX/SDIO_D2 /
DCMI_D8 / USART3_TX/
EVENTOUT
52 C4 79 112 B13 140 PC11 I/O FT
UART4_RX/ SPI3_MISO /
SDIO_D3 /
DCMI_D4/USART3_RX /
I2S3ext_SD/ EVENTOUT
53 A3 80 113 A12 141 PC12 I/O FT
UART5_TX/SDIO_CK /
DCMI_D9 / SPI3_MOSI
/I2S3_SD / USART3_CK/
EVENTOUT
- D6 81 114 B12 142 PD0 I/O FT FSMC_D2/CAN1_RX/
EVENTOUT
- C5 82 115 C12 143 PD1 I/O FT FSMC_D3 / CAN1_TX/
EVENTOUT
54 B4 83 116 D12 144 PD2 I/O FT
TIM3_ETR/UART5_RX/
SDIO_CMD / DCMI_D11/
EVENTOUT
Table 7. STM32F40x pin and ball definitions (continued)
Pin number
Pin name
(function after
reset)(1)
Pin type
I / O structure
Notes
Alternate functions Additional functions
LQFP64
WLCSP90
LQFP100
LQFP144
UFBGA176
LQFP176
DocID022152 Rev 4 55/185
STM32F405xx, STM32F407xx Pinouts and pin description
- - 84 117 D11 145 PD3 I/O FT
FSMC_CLK/
USART2_CTS/
EVENTOUT
- A4 85 118 D10 146 PD4 I/O FT
FSMC_NOE/
USART2_RTS/
EVENTOUT
- C6 86 119 C11 147 PD5 I/O FT FSMC_NWE/USART2_TX
/ EVENTOUT
- - - 120 D8 148 VSS S
- - - 121 C8 149 VDD S
- B5 87 122 B11 150 PD6 I/O FT FSMC_NWAIT/
USART2_RX/ EVENTOUT
- A5 88 123 A11 151 PD7 I/O FT
USART2_CK/FSMC_NE1/
FSMC_NCE2/
EVENTOUT
- - - 124 C10 152 PG9 I/O FT
USART6_RX /
FSMC_NE2/FSMC_NCE3
/ EVENTOUT
- - - 125 B10 153 PG10 I/O FT FSMC_NCE4_1/
FSMC_NE3/ EVENTOUT
- - - 126 B9 154 PG11 I/O FT
FSMC_NCE4_2 /
ETH_MII_TX_EN/
ETH _RMII_TX_EN/
EVENTOUT
- - - 127 B8 155 PG12 I/O FT
FSMC_NE4 /
USART6_RTS/
EVENTOUT
- - - 128 A8 156 PG13 I/O FT
FSMC_A24 /
USART6_CTS
/ETH_MII_TXD0/
ETH_RMII_TXD0/
EVENTOUT
- - - 129 A7 157 PG14 I/O FT
FSMC_A25 / USART6_TX
/ETH_MII_TXD1/
ETH_RMII_TXD1/
EVENTOUT
Table 7. STM32F40x pin and ball definitions (continued)
Pin number
Pin name
(function after
reset)(1)
Pin type
I / O structure
Notes
Alternate functions Additional functions
LQFP64
WLCSP90
LQFP100
LQFP144
UFBGA176
LQFP176
Pinouts and pin description STM32F405xx, STM32F407xx
56/185 DocID022152 Rev 4
- E8 - 130 D7 158 VSS S
- F7 - 131 C7 159 VDD S
- - - 132 B7 160 PG15 I/O FT USART6_CTS /
DCMI_D13/ EVENTOUT
55 B6 89 133 A10 161
PB3
(JTDO/
TRACESWO)
I/O FT
JTDO/ TRACESWO/
SPI3_SCK / I2S3_CK /
TIM2_CH2 / SPI1_SCK/
EVENTOUT
56 A6 90 134 A9 162
PB4
(NJTRST)
I/O FT
NJTRST/ SPI3_MISO /
TIM3_CH1 / SPI1_MISO /
I2S3ext_SD/ EVENTOUT
57 D7 91 135 A6 163 PB5 I/O FT
I2C1_SMBA/ CAN2_RX /
OTG_HS_ULPI_D7 /
ETH_PPS_OUT/TIM3_CH
2 / SPI1_MOSI/
SPI3_MOSI / DCMI_D10 /
I2S3_SD/ EVENTOUT
58 C7 92 136 B6 164 PB6 I/O FT
I2C1_SCL/ TIM4_CH1 /
CAN2_TX /
DCMI_D5/USART1_TX/
EVENTOUT
59 B7 93 137 B5 165 PB7 I/O FT
I2C1_SDA / FSMC_NL /
DCMI_VSYNC /
USART1_RX/ TIM4_CH2/
EVENTOUT
60 A7 94 138 D6 166 BOOT0 I B VPP
61 D8 95 139 A5 167 PB8 I/O FT
TIM4_CH3/SDIO_D4/
TIM10_CH1 / DCMI_D6 /
ETH_MII_TXD3 /
I2C1_SCL/ CAN1_RX/
EVENTOUT
62 C8 96 140 B4 168 PB9 I/O FT
SPI2_NSS/ I2S2_WS /
TIM4_CH4/ TIM11_CH1/
SDIO_D5 / DCMI_D7 /
I2C1_SDA / CAN1_TX/
EVENTOUT
Table 7. STM32F40x pin and ball definitions (continued)
Pin number
Pin name
(function after
reset)(1)
Pin type
I / O structure
Notes
Alternate functions Additional functions
LQFP64
WLCSP90
LQFP100
LQFP144
UFBGA176
LQFP176
DocID022152 Rev 4 57/185
STM32F405xx, STM32F407xx Pinouts and pin description
- - 97 141 A4 169 PE0 I/O FT TIM4_ETR / FSMC_NBL0
/ DCMI_D2/ EVENTOUT
- - 98 142 A3 170 PE1 I/O FT FSMC_NBL1 / DCMI_D3/
EVENTOUT
63 - 99 - D5 - VSS S
- A8 - 143 C6 171 PDR_ON I FT
64 A1 10
0 144 C5 172 VDD S
- - - - D4 173 PI4 I/O FT TIM8_BKIN / DCMI_D5/
EVENTOUT
- - - - C4 174 PI5 I/O FT
TIM8_CH1 /
DCMI_VSYNC/
EVENTOUT
- - - - C3 175 PI6 I/O FT TIM8_CH2 / DCMI_D6/
EVENTOUT
- - - - C2 176 PI7 I/O FT TIM8_CH3 / DCMI_D7/
EVENTOUT
1. Function availability depends on the chosen device.
2. PC13, PC14, PC15 and PI8 are supplied through the power switch. Since the switch only sinks a limited amount of current
(3 mA), the use of GPIOs PC13 to PC15 and PI8 in output mode is limited:
- The speed should not exceed 2 MHz with a maximum load of 30 pF.
- These I/Os must not be used as a current source (e.g. to drive an LED).
3. Main function after the first backup domain power-up. Later on, it depends on the contents of the RTC registers even after
reset (because these registers are not reset by the main reset). For details on how to manage these I/Os, refer to the RTC
register description sections in the STM32F4xx reference manual, available from the STMicroelectronics website:
www.st.com.
4. FT = 5 V tolerant except when in analog mode or oscillator mode (for PC14, PC15, PH0 and PH1).
5. If the device is delivered in an UFBGA176 or WLCSP90 and the BYPASS_REG pin is set to VDD (Regulator off/internal reset
ON mode), then PA0 is used as an internal Reset (active low).
Table 7. STM32F40x pin and ball definitions (continued)
Pin number
Pin name
(function after
reset)(1)
Pin type
I / O structure
Notes
Alternate functions Additional functions
LQFP64
WLCSP90
LQFP100
LQFP144
UFBGA176
LQFP176
Table 8. FSMC pin definition
Pins(1)
FSMC
LQFP100(2) WLCSP90
(2)
CF NOR/PSRAM/
SRAM NOR/PSRAM Mux NAND 16 bit
PE2 A23 A23 Yes
PE3 A19 A19 Yes
Pinouts and pin description STM32F405xx, STM32F407xx
58/185 DocID022152 Rev 4
PE4 A20 A20 Yes
PE5 A21 A21 Yes
PE6 A22 A22 Yes
PF0 A0 A0 - -
PF1 A1 A1 - -
PF2 A2 A2 - -
PF3 A3 A3 - -
PF4 A4 A4 - -
PF5 A5 A5 - -
PF6 NIORD - -
PF7 NREG - -
PF8 NIOWR - -
PF9 CD - -
PF10 INTR - -
PF12 A6 A6 - -
PF13 A7 A7 - -
PF14 A8 A8 - -
PF15 A9 A9 - -
PG0 A10 A10 - -
PG1 A11 - -
PE7 D4 D4 DA4 D4 Yes Yes
PE8 D5 D5 DA5 D5 Yes Yes
PE9 D6 D6 DA6 D6 Yes Yes
PE10 D7 D7 DA7 D7 Yes Yes
PE11 D8 D8 DA8 D8 Yes Yes
PE12 D9 D9 DA9 D9 Yes Yes
PE13 D10 D10 DA10 D10 Yes Yes
PE14 D11 D11 DA11 D11 Yes Yes
PE15 D12 D12 DA12 D12 Yes Yes
PD8 D13 D13 DA13 D13 Yes Yes
PD9 D14 D14 DA14 D14 Yes Yes
PD10 D15 D15 DA15 D15 Yes Yes
PD11 A16 A16 CLE Yes Yes
Table 8. FSMC pin definition (continued)
Pins(1)
FSMC
LQFP100(2) WLCSP90
(2)
CF NOR/PSRAM/
SRAM NOR/PSRAM Mux NAND 16 bit
DocID022152 Rev 4 59/185
STM32F405xx, STM32F407xx Pinouts and pin description
PD12 A17 A17 ALE Yes Yes
PD13 A18 A18 Yes
PD14 D0 D0 DA0 D0 Yes Yes
PD15 D1 D1 DA1 D1 Yes Yes
PG2 A12 - -
PG3 A13 - -
PG4 A14 - -
PG5 A15 - -
PG6 INT2 - -
PG7 INT3 - -
PD0 D2 D2 DA2 D2 Yes Yes
PD1 D3 D3 DA3 D3 Yes Yes
PD3 CLK CLK Yes
PD4 NOE NOE NOE NOE Yes Yes
PD5 NWE NWE NWE NWE Yes Yes
PD6 NWAIT NWAIT NWAIT NWAIT Yes Yes
PD7 NE1 NE1 NCE2 Yes Yes
PG9 NE2 NE2 NCE3 - -
PG10 NCE4_1 NE3 NE3 - -
PG11 NCE4_2 - -
PG12 NE4 NE4 - -
PG13 A24 A24 - -
PG14 A25 A25 - -
PB7 NADV NADV Yes Yes
PE0 NBL0 NBL0 Yes
PE1 NBL1 NBL1 Yes
1. Full FSMC features are available on LQFP144, LQFP176, and UFBGA176. The features available on
smaller packages are given in the dedicated package column.
2. Ports F and G are not available in devices delivered in 100-pin packages.
Table 8. FSMC pin definition (continued)
Pins(1)
FSMC
LQFP100(2) WLCSP90
(2)
CF NOR/PSRAM/
SRAM NOR/PSRAM Mux NAND 16 bit
Pinouts and pin description STM32F405xx, STM32F407xx
60/185 DocID022152 Rev 4
Table 9. Alternate function mapping
Port
AF0 AF1 AF2 AF3 AF4 AF5 AF6 AF7 AF8 AF9 AF10 AF11 AF12 AF13
AF14 AF15
SYS TIM1/2 TIM3/4/5 TIM8/9/10/1
1 I2C1/2/3
SPI1/SPI2/
I2S2/I2S2ext
SPI3/I2Sext/
I2S3
USART1/2/3/
I2S3ext
UART4/5/
USART6
CAN1/
CAN2/
TIM12/13/14
OTG_FS/
OTG_HS ETH FSMC/SDIO/
OTG_FS DCMI
Port A
PA0 TIM2_CH1_E
TR TIM 5_CH1 TIM8_ETR USART2_CTS UART4_TX ETH_MII_CRS EVENTOUT
PA1 TIM2_CH2 TIM5_CH2 USART2_RTS UART4_RX
ETH_MII
_RX_CLK
ETH_RMII__REF
_CLK
EVENTOUT
PA2 TIM2_CH3 TIM5_CH3 TIM9_CH1 USART2_TX ETH_MDIO EVENTOUT
PA3 TIM2_CH4 TIM5_CH4 TIM9_CH2 USART2_RX OTG_HS_ULPI_
D0 ETH _MII_COL EVENTOUT
PA4 SPI1_NSS SPI3_NSS
I2S3_WS USART2_CK OTG_HS_SO
F
DCMI_HSYN
C EVENTOUT
PA5 TIM2_CH1_E
TR TIM8_CH1N SPI1_SCK OTG_HS_ULPI_
CK EVENTOUT
PA6 TIM1_BKIN TIM3_CH1 TIM8_BKIN SPI1_MISO TIM13_CH1 DCMI_PIXCK EVENTOUT
PA7 TIM1_CH1N TIM3_CH2 TIM8_CH1N SPI1_MOSI TIM14_CH1
ETH_MII _RX_DV
ETH_RMII
_CRS_DV
EVENTOUT
PA8 MCO1 TIM1_CH1 I2C3_SCL USART1_CK OTG_FS_SOF EVENTOUT
PA9 TIM1_CH2 I2C3_SMB
A USART1_TX DCMI_D0 EVENTOUT
PA10 TIM1_CH3 USART1_RX OTG_FS_ID DCMI_D1 EVENTOUT
PA11 TIM1_CH4 USART1_CTS CAN1_RX OTG_FS_DM EVENTOUT
PA12 TIM1_ETR USART1_RTS CAN1_TX OTG_FS_DP EVENTOUT
PA13 JTMSSWDIO
EVENTOUT
PA14 JTCKSWCLK
EVENTOUT
PA15 JTDI TIM 2_CH1
TIM 2_ETR SPI1_NSS SPI3_NSS/
I2S3_WS EVENTOUT
STM32F405xx, STM32F407xx Pinouts and pin description
DocID022152 Rev 4 61/185
Port B
PB0 TIM1_CH2N TIM3_CH3 TIM8_CH2N OTG_HS_ULPI_
D1 ETH _MII_RXD2 EVENTOUT
PB1 TIM1_CH3N TIM3_CH4 TIM8_CH3N OTG_HS_ULPI_
D2 ETH _MII_RXD3 EVENTOUT
PB2 EVENTOUT
PB3
JTDO/
TRACES
WO
TIM2_CH2 SPI1_SCK SPI3_SCK
I2S3_CK EVENTOUT
PB4 NJTRST TIM3_CH1 SPI1_MISO SPI3_MISO I2S3ext_SD EVENTOUT
PB5 TIM3_CH2 I2C1_SMB
A SPI1_MOSI SPI3_MOSI
I2S3_SD CAN2_RX OTG_HS_ULPI_
D7 ETH _PPS_OUT DCMI_D10 EVENTOUT
PB6 TIM4_CH1 I2C1_SCL USART1_TX CAN2_TX DCMI_D5 EVENTOUT
PB7 TIM4_CH2 I2C1_SDA USART1_RX FSMC_NL DCMI_VSYN
C EVENTOUT
PB8 TIM4_CH3 TIM10_CH1 I2C1_SCL CAN1_RX ETH _MII_TXD3 SDIO_D4 DCMI_D6 EVENTOUT
PB9 TIM4_CH4 TIM11_CH1 I2C1_SDA
SPI2_NSS
I2S2_WS
CAN1_TX SDIO_D5 DCMI_D7 EVENTOUT
PB10 TIM2_CH3 I2C2_SCL SPI2_SCK
I2S2_CK USART3_TX OTG_HS_ULPI_
D3 ETH_ MII_RX_ER EVENTOUT
PB11 TIM2_CH4 I2C2_SDA USART3_RX OTG_HS_ULPI_
D4
ETH _MII_TX_EN
ETH
_RMII_TX_EN
EVENTOUT
PB12 TIM1_BKIN I2C2_SMB
A
SPI2_NSS
I2S2_WS USART3_CK CAN2_RX OTG_HS_ULPI_
D5
ETH _MII_TXD0
ETH _RMII_TXD0 OTG_HS_ID EVENTOUT
PB13 TIM1_CH1N SPI2_SCK
I2S2_CK USART3_CTS CAN2_TX OTG_HS_ULPI_
D6
ETH _MII_TXD1
ETH _RMII_TXD1
EVENTOUT
PB14 TIM1_CH2N TIM8_CH2N SPI2_MISO I2S2ext_SD USART3_RTS TIM12_CH1 OTG_HS_DM EVENTOUT
PB15 RTC_
REFIN TIM1_CH3N TIM8_CH3N SPI2_MOSI
I2S2_SD TIM12_CH2 OTG_HS_DP EVENTOUT
Table 9. Alternate function mapping (continued)
Port
AF0 AF1 AF2 AF3 AF4 AF5 AF6 AF7 AF8 AF9 AF10 AF11 AF12 AF13
AF14 AF15
SYS TIM1/2 TIM3/4/5 TIM8/9/10/1
1 I2C1/2/3
SPI1/SPI2/
I2S2/I2S2ext
SPI3/I2Sext/
I2S3
USART1/2/3/
I2S3ext
UART4/5/
USART6
CAN1/
CAN2/
TIM12/13/14
OTG_FS/
OTG_HS ETH FSMC/SDIO/
OTG_FS DCMI
Pinouts and pin description STM32F405xx, STM32F407xx
62/185 DocID022152 Rev 4
Port C
PC0 OTG_HS_ULPI_
STP EVENTOUT
PC1 ETH_MDC EVENTOUT
PC2 SPI2_MISO I2S2ext_SD OTG_HS_ULPI_
DIR ETH _MII_TXD2 EVENTOUT
PC3 SPI2_MOSI
I2S2_SD
OTG_HS_ULPI_
NXT
ETH
_MII_TX_CLK EVENTOUT
PC4 ETH_MII_RXD0
ETH_RMII_RXD0 EVENTOUT
PC5 ETH _MII_RXD1
ETH _RMII_RXD1 EVENTOUT
PC6 TIM3_CH1 TIM8_CH1 I2S2_MCK USART6_TX SDIO_D6 DCMI_D0 EVENTOUT
PC7 TIM3_CH2 TIM8_CH2 I2S3_MCK USART6_RX SDIO_D7 DCMI_D1 EVENTOUT
PC8 TIM3_CH3 TIM8_CH3 USART6_CK SDIO_D0 DCMI_D2 EVENTOUT
PC9 MCO2 TIM3_CH4 TIM8_CH4 I2C3_SDA I2S_CKIN SDIO_D1 DCMI_D3 EVENTOUT
PC10 SPI3_SCK/
I2S3_CK USART3_TX/ UART4_TX SDIO_D2 DCMI_D8 EVENTOUT
PC11 I2S3ext_SD SPI3_MISO/ USART3_RX UART4_RX SDIO_D3 DCMI_D4 EVENTOUT
PC12 SPI3_MOSI
I2S3_SD USART3_CK UART5_TX SDIO_CK DCMI_D9 EVENTOUT
PC13 EVENTOUT
PC14 EVENTOUT
PC15 EVENTOUT
Table 9. Alternate function mapping (continued)
Port
AF0 AF1 AF2 AF3 AF4 AF5 AF6 AF7 AF8 AF9 AF10 AF11 AF12 AF13
AF14 AF15
SYS TIM1/2 TIM3/4/5 TIM8/9/10/1
1 I2C1/2/3
SPI1/SPI2/
I2S2/I2S2ext
SPI3/I2Sext/
I2S3
USART1/2/3/
I2S3ext
UART4/5/
USART6
CAN1/
CAN2/
TIM12/13/14
OTG_FS/
OTG_HS ETH FSMC/SDIO/
OTG_FS DCMI
STM32F405xx, STM32F407xx Pinouts and pin description
DocID022152 Rev 4 63/185
Port D
PD0 CAN1_RX FSMC_D2 EVENTOUT
PD1 CAN1_TX FSMC_D3 EVENTOUT
PD2 TIM3_ETR UART5_RX SDIO_CMD DCMI_D11 EVENTOUT
PD3 USART2_CTS FSMC_CLK EVENTOUT
PD4 USART2_RTS FSMC_NOE EVENTOUT
PD5 USART2_TX FSMC_NWE EVENTOUT
PD6 USART2_RX FSMC_NWAIT EVENTOUT
PD7 USART2_CK FSMC_NE1/
FSMC_NCE2 EVENTOUT
PD8 USART3_TX FSMC_D13 EVENTOUT
PD9 USART3_RX FSMC_D14 EVENTOUT
PD10 USART3_CK FSMC_D15 EVENTOUT
PD11 USART3_CTS FSMC_A16 EVENTOUT
PD12 TIM4_CH1 USART3_RTS FSMC_A17 EVENTOUT
PD13 TIM4_CH2 FSMC_A18 EVENTOUT
PD14 TIM4_CH3 FSMC_D0 EVENTOUT
PD15 TIM4_CH4 FSMC_D1 EVENTOUT
Table 9. Alternate function mapping (continued)
Port
AF0 AF1 AF2 AF3 AF4 AF5 AF6 AF7 AF8 AF9 AF10 AF11 AF12 AF13
AF14 AF15
SYS TIM1/2 TIM3/4/5 TIM8/9/10/1
1 I2C1/2/3
SPI1/SPI2/
I2S2/I2S2ext
SPI3/I2Sext/
I2S3
USART1/2/3/
I2S3ext
UART4/5/
USART6
CAN1/
CAN2/
TIM12/13/14
OTG_FS/
OTG_HS ETH FSMC/SDIO/
OTG_FS DCMI
Pinouts and pin description STM32F405xx, STM32F407xx
64/185 DocID022152 Rev 4
Port E
PE0 TIM4_ETR FSMC_NBL0 DCMI_D2 EVENTOUT
PE1 FSMC_NBL1 DCMI_D3 EVENTOUT
PE2 TRACECL
K ETH _MII_TXD3 FSMC_A23 EVENTOUT
PE3 TRACED0 FSMC_A19 EVENTOUT
PE4 TRACED1 FSMC_A20 DCMI_D4 EVENTOUT
PE5 TRACED2 TIM9_CH1 FSMC_A21 DCMI_D6 EVENTOUT
PE6 TRACED3 TIM9_CH2 FSMC_A22 DCMI_D7 EVENTOUT
PE7 TIM1_ETR FSMC_D4 EVENTOUT
PE8 TIM1_CH1N FSMC_D5 EVENTOUT
PE9 TIM1_CH1 FSMC_D6 EVENTOUT
PE10 TIM1_CH2N FSMC_D7 EVENTOUT
PE11 TIM1_CH2 FSMC_D8 EVENTOUT
PE12 TIM1_CH3N FSMC_D9 EVENTOUT
PE13 TIM1_CH3 FSMC_D10 EVENTOUT
PE14 TIM1_CH4 FSMC_D11 EVENTOUT
PE15 TIM1_BKIN FSMC_D12 EVENTOUT
Table 9. Alternate function mapping (continued)
Port
AF0 AF1 AF2 AF3 AF4 AF5 AF6 AF7 AF8 AF9 AF10 AF11 AF12 AF13
AF14 AF15
SYS TIM1/2 TIM3/4/5 TIM8/9/10/1
1 I2C1/2/3
SPI1/SPI2/
I2S2/I2S2ext
SPI3/I2Sext/
I2S3
USART1/2/3/
I2S3ext
UART4/5/
USART6
CAN1/
CAN2/
TIM12/13/14
OTG_FS/
OTG_HS ETH FSMC/SDIO/
OTG_FS DCMI
STM32F405xx, STM32F407xx Pinouts and pin description
DocID022152 Rev 4 65/185
Port F
PF0 I2C2_SDA FSMC_A0 EVENTOUT
PF1 I2C2_SCL FSMC_A1 EVENTOUT
PF2 I2C2_
SMBA FSMC_A2 EVENTOUT
PF3 FSMC_A3 EVENTOUT
PF4 FSMC_A4 EVENTOUT
PF5 FSMC_A5 EVENTOUT
PF6 TIM10_CH1 FSMC_NIORD EVENTOUT
PF7 TIM11_CH1 FSMC_NREG EVENTOUT
PF8 TIM13_CH1 FSMC_
NIOWR EVENTOUT
PF9 TIM14_CH1 FSMC_CD EVENTOUT
PF10 FSMC_INTR EVENTOUT
PF11 DCMI_D12 EVENTOUT
PF12 FSMC_A6 EVENTOUT
PF13 FSMC_A7 EVENTOUT
PF14 FSMC_A8 EVENTOUT
PF15 FSMC_A9 EVENTOUT
Table 9. Alternate function mapping (continued)
Port
AF0 AF1 AF2 AF3 AF4 AF5 AF6 AF7 AF8 AF9 AF10 AF11 AF12 AF13
AF14 AF15
SYS TIM1/2 TIM3/4/5 TIM8/9/10/1
1 I2C1/2/3
SPI1/SPI2/
I2S2/I2S2ext
SPI3/I2Sext/
I2S3
USART1/2/3/
I2S3ext
UART4/5/
USART6
CAN1/
CAN2/
TIM12/13/14
OTG_FS/
OTG_HS ETH FSMC/SDIO/
OTG_FS DCMI
Pinouts and pin description STM32F405xx, STM32F407xx
66/185 DocID022152 Rev 4
Port G
PG0 FSMC_A10 EVENTOUT
PG1 FSMC_A11 EVENTOUT
PG2 FSMC_A12 EVENTOUT
PG3 FSMC_A13 EVENTOUT
PG4 FSMC_A14 EVENTOUT
PG5 FSMC_A15 EVENTOUT
PG6 FSMC_INT2 EVENTOUT
PG7 USART6_CK FSMC_INT3 EVENTOUT
PG8 USART6_
RTS ETH _PPS_OUT EVENTOUT
PG9 USART6_RX FSMC_NE2/
FSMC_NCE3 EVENTOUT
PG10
FSMC_
NCE4_1/
FSMC_NE3
EVENTOUT
PG11
ETH _MII_TX_EN
ETH _RMII_
TX_EN
FSMC_NCE4_
2 EVENTOUT
PG12 USART6_
RTS FSMC_NE4 EVENTOUT
PG13 UART6_CTS
ETH _MII_TXD0
ETH _RMII_TXD0
FSMC_A24 EVENTOUT
PG14 USART6_TX ETH _MII_TXD1
ETH _RMII_TXD1 FSMC_A25 EVENTOUT
PG15 USART6_
CTS DCMI_D13 EVENTOUT
Table 9. Alternate function mapping (continued)
Port
AF0 AF1 AF2 AF3 AF4 AF5 AF6 AF7 AF8 AF9 AF10 AF11 AF12 AF13
AF14 AF15
SYS TIM1/2 TIM3/4/5 TIM8/9/10/1
1 I2C1/2/3
SPI1/SPI2/
I2S2/I2S2ext
SPI3/I2Sext/
I2S3
USART1/2/3/
I2S3ext
UART4/5/
USART6
CAN1/
CAN2/
TIM12/13/14
OTG_FS/
OTG_HS ETH FSMC/SDIO/
OTG_FS DCMI
STM32F405xx, STM32F407xx Pinouts and pin description
DocID022152 Rev 4 67/185
Port H
PH0 EVENTOUT
PH1 EVENTOUT
PH2 ETH _MII_CRS EVENTOUT
PH3 ETH _MII_COL EVENTOUT
PH4 I2C2_SCL OTG_HS_ULPI_
NXT EVENTOUT
PH5 I2C2_SDA EVENTOUT
PH6 I2C2_SMB
A TIM12_CH1 ETH _MII_RXD2 EVENTOUT
PH7 I2C3_SCL ETH _MII_RXD3 EVENTOUT
PH8 I2C3_SDA DCMI_HSYN
C EVENTOUT
PH9 I2C3_SMB
A TIM12_CH2 DCMI_D0 EVENTOUT
PH10 TIM5_CH1 DCMI_D1 EVENTOUT
PH11 TIM5_CH2 DCMI_D2 EVENTOUT
PH12 TIM5_CH3 DCMI_D3 EVENTOUT
PH13 TIM8_CH1N CAN1_TX EVENTOUT
PH14 TIM8_CH2N DCMI_D4 EVENTOUT
PH15 TIM8_CH3N DCMI_D11 EVENTOUT
Table 9. Alternate function mapping (continued)
Port
AF0 AF1 AF2 AF3 AF4 AF5 AF6 AF7 AF8 AF9 AF10 AF11 AF12 AF13
AF14 AF15
SYS TIM1/2 TIM3/4/5 TIM8/9/10/1
1 I2C1/2/3
SPI1/SPI2/
I2S2/I2S2ext
SPI3/I2Sext/
I2S3
USART1/2/3/
I2S3ext
UART4/5/
USART6
CAN1/
CAN2/
TIM12/13/14
OTG_FS/
OTG_HS ETH FSMC/SDIO/
OTG_FS DCMI
Pinouts and pin description STM32F405xx, STM32F407xx
68/185 DocID022152 Rev 4
Port I
PI0 TIM5_CH4 SPI2_NSS
I2S2_WS DCMI_D13 EVENTOUT
PI1 SPI2_SCK
I2S2_CK DCMI_D8 EVENTOUT
PI2 TIM8_CH4 SPI2_MISO I2S2ext_SD DCMI_D9 EVENTOUT
PI3 TIM8_ETR SPI2_MOSI
I2S2_SD DCMI_D10 EVENTOUT
PI4 TIM8_BKIN DCMI_D5 EVENTOUT
PI5 TIM8_CH1 DCMI_
VSYNC EVENTOUT
PI6 TIM8_CH2 DCMI_D6 EVENTOUT
PI7 TIM8_CH3 DCMI_D7 EVENTOUT
PI8 EVENTOUT
PI9 CAN1_RX EVENTOUT
PI10 ETH _MII_RX_ER EVENTOUT
PI11 OTG_HS_ULPI_
DIR EVENTOUT
Table 9. Alternate function mapping (continued)
Port
AF0 AF1 AF2 AF3 AF4 AF5 AF6 AF7 AF8 AF9 AF10 AF11 AF12 AF13
AF14 AF15
SYS TIM1/2 TIM3/4/5 TIM8/9/10/1
1 I2C1/2/3
SPI1/SPI2/
I2S2/I2S2ext
SPI3/I2Sext/
I2S3
USART1/2/3/
I2S3ext
UART4/5/
USART6
CAN1/
CAN2/
TIM12/13/14
OTG_FS/
OTG_HS ETH FSMC/SDIO/
OTG_FS DCMI
DocID022152 Rev 4 69/185
STM32F405xx, STM32F407xx Memory mapping
4 Memory mapping
The memory map is shown in Figure 18.
Figure 18. STM32F40x memory map
512-Mbyte
block 7
Cortex-M4's
internal
peripherals
512-Mbyte
block 6
Not used
512-Mbyte
block 5
FSMC registers
512-Mbyte
block 4
FSMC bank 3
& bank4
512-Mbyte
block 3
FSMC bank1
& bank2
512-Mbyte
block 2
Peripherals
512-Mbyte
block 1
SRAM
0x0000 0000
0x1FFF FFFF
0x2000 0000
0x3FFF FFFF
0x4000 0000
0x5FFF FFFF
0x6000 0000
0x7FFF FFFF
0x8000 0000
0x9FFF FFFF
0xA000 0000
0xBFFF FFFF
0xC000 0000
0xDFFF FFFF
0xE000 0000
0xFFFF FFFF
512-Mbyte
block 0
Code
Flash
0x0810 0000 - 0x0FFF FFFF
0x1FFF 0000 - 0x1FFF 7A0F
0x1FFF C000 - 0x1FFF C007
0x0800 0000 - 0x080F FFFF
0x0010 0000 - 0x07FF FFFF
0x0000 0000 - 0x000F FFFF
System memory + OTP
Reserved
Reserved
Aliased to Flash, system
memory or SRAM depending
on the BOOT pins
SRAM (16 KB aliased
by bit-banding)
Reserved
0x2000 0000 - 0x2001 BFFF
0x2001 C000 - 0x2001 FFFF
0x2002 0000 - 0x3FFF FFFF
0x4000 0000
Reserved
0x4000 7FFF
0x4000 7800 - 0x4000 FFFF
0x4001 0000
0x4001 57FF
0x4002 000
Reserved 0x5006 0C00 - 0x5FFF FFFF
0x6000 0000
AHB3
0xA000 0FFF
0xA000 1000 - 0xDFFF FFFF
ai18513f
Option Bytes
Reserved 0x4001 5800 - 0x4001 FFFF
0x5006 0BFF
AHB2
0x5000 0000
Reserved 0x4008 0000 - 0x4FFF FFFF
AHB1
SRAM (112 KB aliased
by bit-banding)
Reserved 0x1FFF C008 - 0x1FFF FFFF
Reserved 0x1FFF 7A10 - 0x1FFF 7FFF
CCM data RAM
(64 KB data SRAM) 0x1000 0000 - 0x1000 FFFF
Reserved 0x1001 0000 - 0x1FFE FFFF
Reserved
APB2
0x4007 FFFF
APB1
CORTEX-M4 internal peripherals 0xE000 0000 - 0xE00F FFFF
Reserved 0xE010 0000 - 0xFFFF FFFF
Memory mapping STM32F405xx, STM32F407xx
70/185 DocID022152 Rev 4
Table 10. STM32F40x register boundary addresses
Bus Boundary address Peripheral
0xE00F FFFF - 0xFFFF FFFF Reserved
Cortex-M4 0xE000 0000 - 0xE00F FFFF Cortex-M4 internal peripherals
0xA000 1000 - 0xDFFF FFFF Reserved
AHB3
0xA000 0000 - 0xA000 0FFF FSMC control register
0x9000 0000 - 0x9FFF FFFF FSMC bank 4
0x8000 0000 - 0x8FFF FFFF FSMC bank 3
0x7000 0000 - 0x7FFF FFFF FSMC bank 2
0x6000 0000 - 0x6FFF FFFF FSMC bank 1
0x5006 0C00- 0x5FFF FFFF Reserved
AHB2
0x5006 0800 - 0x5006 0BFF RNG
0x5005 0400 - 0x5006 07FF Reserved
0x5005 0000 - 0x5005 03FF DCMI
0x5004 0000- 0x5004 FFFF Reserved
0x5000 0000 - 0x5003 FFFF USB OTG FS
0x4008 0000- 0x4FFF FFFF Reserved
DocID022152 Rev 4 71/185
STM32F405xx, STM32F407xx Memory mapping
AHB1
0x4004 0000 - 0x4007 FFFF USB OTG HS
0x4002 9400 - 0x4003 FFFF Reserved
0x4002 9000 - 0x4002 93FF
ETHERNET MAC
0x4002 8C00 - 0x4002 8FFF
0x4002 8800 - 0x4002 8BFF
0x4002 8400 - 0x4002 87FF
0x4002 8000 - 0x4002 83FF
0x4002 6800 - 0x4002 7FFF Reserved
0x4002 6400 - 0x4002 67FF DMA2
0x4002 6000 - 0x4002 63FF DMA1
0x4002 5000 - 0x4002 5FFF Reserved
0x4002 4000 - 0x4002 4FFF BKPSRAM
0x4002 3C00 - 0x4002 3FFF Flash interface register
0x4002 3800 - 0x4002 3BFF RCC
0x4002 3400 - 0x4002 37FF Reserved
0x4002 3000 - 0x4002 33FF CRC
0x4002 2400 - 0x4002 2FFF Reserved
0x4002 2000 - 0x4002 23FF GPIOI
0x4002 1C00 - 0x4002 1FFF GPIOH
0x4002 1800 - 0x4002 1BFF GPIOG
0x4002 1400 - 0x4002 17FF GPIOF
0x4002 1000 - 0x4002 13FF GPIOE
0x4002 0C00 - 0x4002 0FFF GPIOD
0x4002 0800 - 0x4002 0BFF GPIOC
0x4002 0400 - 0x4002 07FF GPIOB
0x4002 0000 - 0x4002 03FF GPIOA
0x4001 5800- 0x4001 FFFF Reserved
Table 10. STM32F40x register boundary addresses (continued)
Bus Boundary address Peripheral
Memory mapping STM32F405xx, STM32F407xx
72/185 DocID022152 Rev 4
APB2
0x4001 4C00 - 0x4001 57FF Reserved
0x4001 4800 - 0x4001 4BFF TIM11
0x4001 4400 - 0x4001 47FF TIM10
0x4001 4000 - 0x4001 43FF TIM9
0x4001 3C00 - 0x4001 3FFF EXTI
0x4001 3800 - 0x4001 3BFF SYSCFG
0x4001 3400 - 0x4001 37FF Reserved
0x4001 3000 - 0x4001 33FF SPI1
0x4001 2C00 - 0x4001 2FFF SDIO
0x4001 2400 - 0x4001 2BFF Reserved
0x4001 2000 - 0x4001 23FF ADC1 - ADC2 - ADC3
0x4001 1800 - 0x4001 1FFF Reserved
0x4001 1400 - 0x4001 17FF USART6
0x4001 1000 - 0x4001 13FF USART1
0x4001 0800 - 0x4001 0FFF Reserved
0x4001 0400 - 0x4001 07FF TIM8
0x4001 0000 - 0x4001 03FF TIM1
0x4000 7800- 0x4000 FFFF Reserved
Table 10. STM32F40x register boundary addresses (continued)
Bus Boundary address Peripheral
DocID022152 Rev 4 73/185
STM32F405xx, STM32F407xx Memory mapping
APB1
0x4000 7800 - 0x4000 7FFF Reserved
0x4000 7400 - 0x4000 77FF DAC
0x4000 7000 - 0x4000 73FF PWR
0x4000 6C00 - 0x4000 6FFF Reserved
0x4000 6800 - 0x4000 6BFF CAN2
0x4000 6400 - 0x4000 67FF CAN1
0x4000 6000 - 0x4000 63FF Reserved
0x4000 5C00 - 0x4000 5FFF I2C3
0x4000 5800 - 0x4000 5BFF I2C2
0x4000 5400 - 0x4000 57FF I2C1
0x4000 5000 - 0x4000 53FF UART5
0x4000 4C00 - 0x4000 4FFF UART4
0x4000 4800 - 0x4000 4BFF USART3
0x4000 4400 - 0x4000 47FF USART2
0x4000 4000 - 0x4000 43FF I2S3ext
0x4000 3C00 - 0x4000 3FFF SPI3 / I2S3
0x4000 3800 - 0x4000 3BFF SPI2 / I2S2
0x4000 3400 - 0x4000 37FF I2S2ext
0x4000 3000 - 0x4000 33FF IWDG
0x4000 2C00 - 0x4000 2FFF WWDG
0x4000 2800 - 0x4000 2BFF RTC & BKP Registers
0x4000 2400 - 0x4000 27FF Reserved
0x4000 2000 - 0x4000 23FF TIM14
0x4000 1C00 - 0x4000 1FFF TIM13
0x4000 1800 - 0x4000 1BFF TIM12
0x4000 1400 - 0x4000 17FF TIM7
0x4000 1000 - 0x4000 13FF TIM6
0x4000 0C00 - 0x4000 0FFF TIM5
0x4000 0800 - 0x4000 0BFF TIM4
0x4000 0400 - 0x4000 07FF TIM3
0x4000 0000 - 0x4000 03FF TIM2
Table 10. STM32F40x register boundary addresses (continued)
Bus Boundary address Peripheral
Electrical characteristics STM32F405xx, STM32F407xx
74/185 DocID022152 Rev 4
5 Electrical characteristics
5.1 Parameter conditions
Unless otherwise specified, all voltages are referenced to VSS.
5.1.1 Minimum and maximum values
Unless otherwise specified the minimum and maximum values are guaranteed in the worst
conditions of ambient temperature, supply voltage and frequencies by tests in production on
100% of the devices with an ambient temperature at TA = 25 °C and TA = TAmax (given by
the selected temperature range).
Data based on characterization results, design simulation and/or technology characteristics
are indicated in the table footnotes and are not tested in production. Based on
characterization, the minimum and maximum values refer to sample tests and represent the
mean value plus or minus three times the standard deviation (mean±3Σ).
5.1.2 Typical values
Unless otherwise specified, typical data are based on TA = 25 °C, VDD = 3.3 V (for the
1.8 V ≤ VDD ≤ 3.6 V voltage range). They are given only as design guidelines and are not
tested.
Typical ADC accuracy values are determined by characterization of a batch of samples from
a standard diffusion lot over the full temperature range, where 95% of the devices have an
error less than or equal to the value indicated (mean±2Σ).
5.1.3 Typical curves
Unless otherwise specified, all typical curves are given only as design guidelines and are
not tested.
5.1.4 Loading capacitor
The loading conditions used for pin parameter measurement are shown in Figure 19.
5.1.5 Pin input voltage
The input voltage measurement on a pin of the device is described in Figure 20.
Figure 19. Pin loading conditions Figure 20. Pin input voltage
MS19011V1
C = 50 pF
STM32F pin
OSC_OUT (Hi-Z when
using HSE or LSE)
MS19010V1
STM32F pin
VIN OSC_OUT (Hi-Z when
using HSE or LSE)
DocID022152 Rev 4 75/185
STM32F405xx, STM32F407xx Electrical characteristics
5.1.6 Power supply scheme
Figure 21. Power supply scheme
1. Each power supply pair must be decoupled with filtering ceramic capacitors as shown above. These
capacitors must be placed as close as possible to, or below, the appropriate pins on the underside of the
PCB to ensure the good functionality of the device.
2. To connect BYPASS_REG and PDR_ON pins, refer to Section 2.2.16: Voltage regulator and Table 2.2.15:
Power supply supervisor.
3. The two 2.2 μF ceramic capacitors should be replaced by two 100 nF decoupling capacitors when the
voltage regulator is OFF.
4. The 4.7 μF ceramic capacitor must be connected to one of the VDD pin.
5. VDDA=VDD and VSSA=VSS.
MS19911V2
Backup circuitry
(OSC32K,RTC,
Wakeup logic
Backup registers,
backup RAM)
Kernel logic
(CPU, digital
& RAM)
Analog:
RCs,
PLL,..
Power
switch
VBAT
GPIOs
OUT
IN
15 × 100 nF
+ 1 × 4.7 μF
VBAT =
1.65 to 3.6V
Voltage
regulator
VDDA
ADC
Level shifter
IO
Logic
VDD
100 nF
+ 1 μF
Flash memory
VCAP_1
2 × 2.2 μF VCAP_2
BYPASS_REG
PDR_ON
Reset
controller
VDD
1/2/...14/15
VSS
1/2/...14/15
VDD
VREF+
VREFVSSA
VREF
100 nF
+ 1 μF
Electrical characteristics STM32F405xx, STM32F407xx
76/185 DocID022152 Rev 4
5.1.7 Current consumption measurement
Figure 22. Current consumption measurement scheme
5.2 Absolute maximum ratings
Stresses above the absolute maximum ratings listed in Table 11: Voltage characteristics,
Table 12: Current characteristics, and Table 13: Thermal characteristics may cause
permanent damage to the device. These are stress ratings only and functional operation of
the device at these conditions is not implied. Exposure to maximum rating conditions for
extended periods may affect device reliability.
ai14126
VBAT
VDD
VDDA
IDD_VBAT
IDD
Table 11. Voltage characteristics
Symbol Ratings Min Max Unit
VDD–VSS External main supply voltage (including VDDA, VDD)(1)
1. All main power (VDD, VDDA) and ground (VSS, VSSA) pins must always be connected to the external power
supply, in the permitted range.
–0.3 4.0
V
VIN
Input voltage on five-volt tolerant pin(2)
2. VIN maximum value must always be respected. Refer to Table 12 for the values of the maximum allowed
injected current.
VSS–0.3 VDD+4
Input voltage on any other pin VSS–0.3 4.0
|ΔVDDx| Variations between different VDD power pins - 50
mV
|VSSX − VSS| Variations between all the different ground pins - 50
VESD(HBM) Electrostatic discharge voltage (human body model)
see Section 5.3.14:
Absolute maximum
ratings (electrical
sensitivity)
DocID022152 Rev 4 77/185
STM32F405xx, STM32F407xx Electrical characteristics
5.3 Operating conditions
5.3.1 General operating conditions
Table 12. Current characteristics
Symbol Ratings Max. Unit
IVDD Total current into VDD power lines (source)(1)
1. All main power (VDD, VDDA) and ground (VSS, VSSA) pins must always be connected to the external power
supply, in the permitted range.
150
mA
IVSS Total current out of VSS ground lines (sink)(1) 150
IIO
Output current sunk by any I/O and control pin 25
Output current source by any I/Os and control pin 25
IINJ(PIN)
(2)
2. Negative injection disturbs the analog performance of the device. See note in Section 5.3.20: 12-bit ADC
characteristics.
Injected current on five-volt tolerant I/O(3)
3. Positive injection is not possible on these I/Os. A negative injection is induced by VINVDD while a negative injection is induced by VIN 25 MHz.
4. When the ADC is ON (ADON bit set in the ADC_CR2 register), add an additional power consumption of 1.6 mA per ADC for
the analog part.
5. When analog peripheral blocks such as ADCs, DACs, HSE, LSE, HSI, or LSI are ON, an additional power consumption
should be considered.
6. In this case HCLK = system clock/2.
Electrical characteristics STM32F405xx, STM32F407xx
84/185 DocID022152 Rev 4
Table 21. Typical and maximum current consumption in Run mode, code with data processing
running from Flash memory (ART accelerator disabled)
Symbol Parameter Conditions fHCLK
Typ Max(1)
Unit
TA = 25 °C TA = 85 °C TA = 105 °C
IDD
Supply current
in Run mode
External clock(2),
all peripherals
enabled(3)(4)
168 MHz 93 109 117
mA
144 MHz 76 89 96
120 MHz 67 79 86
90 MHz 53 65 73
60 MHz 37 49 56
30 MHz 20 32 39
25 MHz 16 27 35
16 MHz 11 23 30
8 MHz 6 18 25
4 MHz 4 16 23
2 MHz 3 15 22
External clock(2),
all peripherals
disabled(3)(4)
168 MHz 46 61 69
144 MHz 40 52 60
120 MHz 37 48 56
90 MHz 30 42 50
60 MHz 22 33 41
30 MHz 12 24 31
25 MHz 10 21 29
16 MHz 7 19 26
8 MHz 4 16 23
4 MHz 3 15 22
2 MHz 2 14 21
1. Based on characterization, tested in production at VDD max and fHCLK max with peripherals enabled.
2. External clock is 4 MHz and PLL is on when fHCLK > 25 MHz.
3. When analog peripheral blocks such as (ADCs, DACs, HSE, LSE, HSI,LSI) are on, an additional power consumption
should be considered.
4. When the ADC is ON (ADON bit set in the ADC_CR2 register), add an additional power consumption of 1.6 mA per ADC
for the analog part.
DocID022152 Rev 4 85/185
STM32F405xx, STM32F407xx Electrical characteristics
Figure 24. Typical current consumption versus temperature, Run mode, code with data
processing running from Flash (ART accelerator ON) or RAM, and peripherals OFF
Figure 25. Typical current consumption versus temperature, Run mode, code with data
processing running from Flash (ART accelerator ON) or RAM, and peripherals ON
MS19974V1
0
5
10
15
20
25
30
35
40
45
50
0 20 40 60 80 100 120 140 160 180
IDD RUN( mA)
CPU Frequency (MHz
-45 °C
0 °C
25 °C
55 °C
85 °C
105 °C
MS19975V1
0
10
20
30
40
50
60
70
80
90
100
0 20 40 60 80 100 120 140 160 180
IDD RUN( mA)
CPU Frequency (MHz
-45°C
0°C
25°C
55°C
85°C
105°C
Electrical characteristics STM32F405xx, STM32F407xx
86/185 DocID022152 Rev 4
Figure 26. Typical current consumption versus temperature, Run mode, code with data
processing running from Flash (ART accelerator OFF) or RAM, and peripherals OFF
Figure 27. Typical current consumption versus temperature, Run mode, code with data
processing running from Flash (ART accelerator OFF) or RAM, and peripherals ON
MS19976V1
0
10
20
30
40
50
60
0 20 40 60 80 100 120 140 160 180
IDD RUN( mA)
CPU Frequency (MHz
-45°C
0°C
25°C
55°C
85°C
105°C
MS19977V1
0
20
40
60
80
100
120
0 20 40 60 80 100 120 140 160 180
IDD RUN( mA)
CPU Frequency (MHz
-45°C
0°C
25°C
55°C
85°C
105°C
DocID022152 Rev 4 87/185
STM32F405xx, STM32F407xx Electrical characteristics
Table 22. Typical and maximum current consumption in Sleep mode
Symbol Parameter Conditions fHCLK
Typ Max(1)
T Unit A =
25 °C
TA =
85 °C
TA =
105 °C
IDD
Supply current in
Sleep mode
External clock(2),
all peripherals enabled(3)
168 MHz 59 77 84
mA
144 MHz 46 61 67
120 MHz 38 53 60
90 MHz 30 44 51
60 MHz 20 34 41
30 MHz 11 24 31
25 MHz 8 21 28
16 MHz 6 18 25
8 MHz 3 16 23
4 MHz 2 15 22
2 MHz 2 14 21
External clock(2), all
peripherals disabled
168 MHz 12 27 35
144 MHz 9 22 29
120 MHz 8 20 28
90 MHz 7 19 26
60 MHz 5 17 24
30 MHz 3 16 23
25 MHz 2 15 22
16 MHz 2 14 21
8 MHz 1 14 21
4 MHz 1 13 21
2 MHz 1 13 21
1. Based on characterization, tested in production at VDD max and fHCLK max with peripherals enabled.
2. External clock is 4 MHz and PLL is on when fHCLK > 25 MHz.
3. Add an additional power consumption of 1.6 mA per ADC for the analog part. In applications, this consumption occurs only
while the ADC is ON (ADON bit is set in the ADC_CR2 register).
Electrical characteristics STM32F405xx, STM32F407xx
88/185 DocID022152 Rev 4
Table 23. Typical and maximum current consumptions in Stop mode
Symbol Parameter Conditions
Typ Max
T Unit A =
25 °C
TA =
25 °C
TA =
85 °C
TA =
105 °C
IDD_STOP
Supply
current in
Stop mode
with main
regulator in
Run mode
Flash in Stop mode, low-speed and highspeed
internal RC oscillators and high-speed
oscillator OFF (no independent watchdog)
0.45 1.5 11.00 20.00
mA
Flash in Deep power down mode, low-speed
and high-speed internal RC oscillators and
high-speed oscillator OFF (no independent
watchdog)
0.40 1.5 11.00 20.00
Supply
current in
Stop mode
with main
regulator in
Low Power
mode
Flash in Stop mode, low-speed and highspeed
internal RC oscillators and high-speed
oscillator OFF (no independent watchdog)
0.31 1.1 8.00 15.00
Flash in Deep power down mode, low-speed
and high-speed internal RC oscillators and
high-speed oscillator OFF (no independent
watchdog)
0.28 1.1 8.00 15.00
Table 24. Typical and maximum current consumptions in Standby mode
Symbol Parameter Conditions
Typ Max(1)
TA = 25 °C Unit TA =
85 °C
TA =
105 °C
VDD =
1.8 V
VDD=
2.4 V
VDD =
3.3 V VDD = 3.6 V
IDD_STBY
Supply current
in Standby
mode
Backup SRAM ON, lowspeed
oscillator and RTC ON 3.0 3.4 4.0 20 36
μA
Backup SRAM OFF, lowspeed
oscillator and RTC ON 2.4 2.7 3.3 16 32
Backup SRAM ON, RTC
OFF 2.4 2.6 3.0 12.5 24.8
Backup SRAM OFF, RTC
OFF 1.7 1.9 2.2 9.8 19.2
1. Based on characterization, not tested in production.
DocID022152 Rev 4 89/185
STM32F405xx, STM32F407xx Electrical characteristics
Figure 28. Typical VBAT current consumption (LSE and RTC ON/backup RAM OFF)
Table 25. Typical and maximum current consumptions in VBAT mode
Symbol Parameter Conditions
Typ Max(1)
Unit
TA = 25 °C TA =
85 °C
TA =
105 °C
VBAT
=
1.8 V
VBAT=
2.4 V
VBAT
=
3.3 V
VBAT = 3.6 V
IDD_VBA
T
Backup
domain
supply
current
Backup SRAM ON, low-speed
oscillator and RTC ON 1.29 1.42 1.68 6 11
μA
Backup SRAM OFF, low-speed
oscillator and RTC ON 0.62 0.73 0.96 3 5
Backup SRAM ON, RTC OFF 0.79 0.81 0.86 5 10
Backup SRAM OFF, RTC OFF 0.10 0.10 0.10 2 4
1. Based on characterization, not tested in production.
MS19990V1
0
0.5
1
1.5
2
2.5
3
3.5
0 10 20 30 40 50 60 70 80 90 100
IVBAT in (μA)
Temperature in (°C)
1.65V
1.8V
2V
2.4V
2.7V
3V
3.3V
3.6V
Electrical characteristics STM32F405xx, STM32F407xx
90/185 DocID022152 Rev 4
Figure 29. Typical VBAT current consumption (LSE and RTC ON/backup RAM ON)
I/O system current consumption
The current consumption of the I/O system has two components: static and dynamic.
I/O static current consumption
All the I/Os used as inputs with pull-up generate current consumption when the pin is
externally held low. The value of this current consumption can be simply computed by using
the pull-up/pull-down resistors values given in Table 47: I/O static characteristics.
For the output pins, any external pull-down or external load must also be considered to
estimate the current consumption.
Additional I/O current consumption is due to I/Os configured as inputs if an intermediate
voltage level is externally applied. This current consumption is caused by the input Schmitt
trigger circuits used to discriminate the input value. Unless this specific configuration is
required by the application, this supply current consumption can be avoided by configuring
these I/Os in analog mode. This is notably the case of ADC input pins which should be
configured as analog inputs.
Caution: Any floating input pin can also settle to an intermediate voltage level or switch inadvertently,
as a result of external electromagnetic noise. To avoid current consumption related to
floating pins, they must either be configured in analog mode, or forced internally to a definite
digital value. This can be done either by using pull-up/down resistors or by configuring the
pins in output mode.
I/O dynamic current consumption
In addition to the internal peripheral current consumption measured previously (see
Table 27: Peripheral current consumption), the I/Os used by an application also contribute
to the current consumption. When an I/O pin switches, it uses the current from the MCU
MS19991V1
0
1
2
3
4
5
6
0 10 20 30 40 50 60 70 80 90 100
IVBAT in (μA)
Temperature in (°C)
1.65V
1.8V
2V
2.4V
2.7V
3V
3.3V
3.6V
DocID022152 Rev 4 91/185
STM32F405xx, STM32F407xx Electrical characteristics
supply voltage to supply the I/O pin circuitry and to charge/discharge the capacitive load
(internal or external) connected to the pin:
where
ISW is the current sunk by a switching I/O to charge/discharge the capacitive load
VDD is the MCU supply voltage
fSW is the I/O switching frequency
C is the total capacitance seen by the I/O pin: C = CINT+ CEXT
The test pin is configured in push-pull output mode and is toggled by software at a fixed
frequency.
ISW = VDD × fSW × C
Electrical characteristics STM32F405xx, STM32F407xx
92/185 DocID022152 Rev 4
Table 26. Switching output I/O current consumption
Symbol Parameter Conditions(1) I/O toggling
frequency (fSW) Typ Unit
IDDIO
I/O switching
current
VDD = 3.3 V(2)
C = CINT
2 MHz 0.02
mA
8 MHz 0.14
25 MHz 0.51
50 MHz 0.86
60 MHz 1.30
VDD = 3.3 V
CEXT = 0 pF
C = CINT + CEXT+ CS
2 MHz 0.10
8 MHz 0.38
25 MHz 1.18
50 MHz 2.47
60 MHz 2.86
VDD = 3.3 V
CEXT = 10 pF
C = CINT + CEXT+ CS
2 MHz 0.17
8 MHz 0.66
25 MHz 1.70
50 MHz 2.65
60 MHz 3.48
VDD = 3.3 V
CEXT = 22 pF
C = CINT + CEXT+ CS
2 MHz 0.23
8 MHz 0.95
25 MHz 3.20
50 MHz 4.69
60 MHz 8.06
VDD = 3.3 V
CEXT = 33 pF
C = CINT + CEXT+ CS
2 MHz 0.30
8 MHz 1.22
25 MHz 3.90
50 MHz 8.82
60 MHz -(3)
1. CS is the PCB board capacitance including the pad pin. CS = 7 pF (estimated value).
2. This test is performed by cutting the LQFP package pin (pad removal).
3. At 60 MHz, C maximum load is specified 30 pF.
DocID022152 Rev 4 93/185
STM32F405xx, STM32F407xx Electrical characteristics
On-chip peripheral current consumption
The current consumption of the on-chip peripherals is given in Table 27. The MCU is placed
under the following conditions:
• At startup, all I/O pins are configured as analog pins by firmware.
• All peripherals are disabled unless otherwise mentioned
• The code is running from Flash memory and the Flash memory access time is equal to
5 wait states at 168 MHz.
• The code is running from Flash memory and the Flash memory access time is equal to
4 wait states at 144 MHz, and the power scale mode is set to 2.
• ART accelerator and Cache off.
• The given value is calculated by measuring the difference of current consumption
– with all peripherals clocked off
– with one peripheral clocked on (with only the clock applied)
• When the peripherals are enabled: HCLK is the system clock, fPCLK1 = fHCLK/4, and
fPCLK2 = fHCLK/2.
• The typical values are obtained for VDD = 3.3 V and TA= 25 °C, unless otherwise
specified.
Table 27. Peripheral current consumption
Peripheral(1) 168 MHz 144 MHz Unit
AHB1
GPIO A 0.49 0.36
mA
GPIO B 0.45 0.33
GPIO C 0.45 0.34
GPIO D 0.45 0.34
GPIO E 0.47 0.35
GPIO F 0.45 0.33
GPIO G 0.44 0.33
GPIO H 0.45 0.34
GPIO I 0.44 0.33
OTG_HS + ULPI 4.57 3.55
CRC 0.07 0.06
BKPSRAM 0.11 0.08
DMA1 6.15 4.75
DMA2 6.24 4.8
ETH_MAC +
ETH_MAC_TX
ETH_MAC_RX
ETH_MAC_PTP
3.28 2.54
AHB2
OTG_FS 4.59 3.69
mA
DCMI 1.04 0.80
Electrical characteristics STM32F405xx, STM32F407xx
94/185 DocID022152 Rev 4
AHB3 FSMC 2.18 1.67
mA
APB1
TIM2 0.80 0.61
TIM3 0.58 0.44
TIM4 0.62 0.48
TIM5 0.79 0.61
TIM6 0.15 0.11
TIM7 0.16 0.12
TIM12 0.33 0.26
TIM13 0.27 0.21
TIM14 0.27 0.21
PWR 0.04 0.03
USART2 0.17 0.13
USART3 0.17 0.13
UART4 0.17 0.13
UART5 0.17 0.13
I2C1 0.17 0.13
I2C2 0.18 0.13
I2C3 0.18 0.13
SPI2/I2S2(2) 0.17/0.16 0.13/0.12
SPI3/I2S3(2) 0.16/0.14 0.12/0.12
CAN1 0.27 0.21
CAN2 0.26 0.20
DAC 0.14 0.10
DAC channel 1(3) 0.91 0.89
DAC channel 2(4) 0.91 0.89
DAC channel 1 and
2(3)(4) 1.69 1.68
WWDG 0.04 0.04
Table 27. Peripheral current consumption (continued)
Peripheral(1) 168 MHz 144 MHz Unit
DocID022152 Rev 4 95/185
STM32F405xx, STM32F407xx Electrical characteristics
5.3.7 Wakeup time from low-power mode
The wakeup times given in Table 28 is measured on a wakeup phase with a 16 MHz HSI
RC oscillator. The clock source used to wake up the device depends from the current
operating mode:
• Stop or Standby mode: the clock source is the RC oscillator
• Sleep mode: the clock source is the clock that was set before entering Sleep mode.
All timings are derived from tests performed under ambient temperature and VDD supply
voltage conditions summarized in Table 14.
APB2
SDIO 0.64 0.54
mA
TIM1 1.47 1.14
TIM8 1.58 1.22
TIM9 0.68 0.54
TIM10 0.45 0.36
TIM11 0.47 0.38
ADC1(5) 2.20 2.10
ADC2(5) 2.04 1.93
ADC3(5) 2.10 2.00
SPI1 0.14 0.12
USART1 0.34 0.27
USART6 0.34 0.28
1. HSE oscillator with 4 MHz crystal and PLL are ON.
2. I2SMOD bit set in SPI_I2SCFGR register, and then the I2SE bit set to enable I2S peripheral.
3. EN1 bit is set in DAC_CR register.
4. EN2 bit is set in DAC_CR register.
5. ADON bit set in ADC_CR2 register.
Table 27. Peripheral current consumption (continued)
Peripheral(1) 168 MHz 144 MHz Unit
Table 28. Low-power mode wakeup timings
Symbol Parameter Min(1) Typ(1) Max(1) Unit
tWUSLEEP
(2) Wakeup from Sleep mode - 1 - μs
tWUSTOP
(2)
Wakeup from Stop mode (regulator in Run mode) - 13 -
Wakeup from Stop mode (regulator in low power mode) - 17 40 μs
Wakeup from Stop mode (regulator in low power mode
and Flash memory in Deep power down mode) - 110 -
tWUSTDBY
(2)(3) Wakeup from Standby mode 260 375 480 μs
1. Based on characterization, not tested in production.
2. The wakeup times are measured from the wakeup event to the point in which the application code reads the first instruction.
3. tWUSTDBY minimum and maximum values are given at 105 °C and –45 °C, respectively.
Electrical characteristics STM32F405xx, STM32F407xx
96/185 DocID022152 Rev 4
5.3.8 External clock source characteristics
High-speed external user clock generated from an external source
The characteristics given in Table 29 result from tests performed using an high-speed
external clock source, and under ambient temperature and supply voltage conditions
summarized in Table 14.
Low-speed external user clock generated from an external source
The characteristics given in Table 30 result from tests performed using an low-speed
external clock source, and under ambient temperature and supply voltage conditions
summarized in Table 14.
Table 29. High-speed external user clock characteristics
Symbol Parameter Conditions Min Typ Max Unit
fHSE_ext
External user clock source
frequency(1) 1 - 50 MHz
VHSEH OSC_IN input pin high level voltage 0.7VDD - VDD V
VHSEL OSC_IN input pin low level voltage VSS - 0.3VDD
tw(HSE)
tw(HSE)
OSC_IN high or low time(1)
1. Guaranteed by design, not tested in production.
5 - -
ns
tr(HSE)
tf(HSE)
OSC_IN rise or fall time(1) - - 10
Cin(HSE) OSC_IN input capacitance(1) - 5 - pF
DuCy(HSE) Duty cycle 45 - 55 %
IL OSC_IN Input leakage current VSS ≤ VIN ≤ VDD - - ±1 μA
Table 30. Low-speed external user clock characteristics
Symbol Parameter Conditions Min Typ Max Unit
fLSE_ext
User External clock source
frequency(1) - 32.768 1000 kHz
VLSEH
OSC32_IN input pin high level
voltage 0.7VDD - VDD V
VLSEL OSC32_IN input pin low level voltage VSS - 0.3VDD
tw(LSE)
tf(LSE)
OSC32_IN high or low time(1) 450 - -
ns
tr(LSE)
tf(LSE)
OSC32_IN rise or fall time(1) - - 50
Cin(LSE) OSC32_IN input capacitance(1) - 5 - pF
DuCy(LSE) Duty cycle 30 - 70 %
IL OSC32_IN Input leakage current VSS ≤ VIN ≤ VDD - - ±1 μA
1. Guaranteed by design, not tested in production.
DocID022152 Rev 4 97/185
STM32F405xx, STM32F407xx Electrical characteristics
Figure 30. High-speed external clock source AC timing diagram
Figure 31. Low-speed external clock source AC timing diagram
High-speed external clock generated from a crystal/ceramic resonator
The high-speed external (HSE) clock can be supplied with a 4 to 26 MHz crystal/ceramic
resonator oscillator. All the information given in this paragraph are based on
characterization results obtained with typical external components specified in Table 31. In
the application, the resonator and the load capacitors have to be placed as close as
possible to the oscillator pins in order to minimize output distortion and startup stabilization
time. Refer to the crystal resonator manufacturer for more details on the resonator
characteristics (frequency, package, accuracy).
ai17528
OSC_IN
External
STM32F
clock source
VHSEH
tf(HSE) tW(HSE)
IL
90%
10%
THSE
tr(HSE) tW(HSE) t
fHSE_ext
VHSEL
ai17529
External OSC32_IN
STM32F
clock source
VLSEH
tf(LSE) tW(LSE)
IL
90%
10%
TLSE
tr(LSE) tW(LSE) t
fLSE_ext
VLSEL
Electrical characteristics STM32F405xx, STM32F407xx
98/185 DocID022152 Rev 4
For CL1 and CL2, it is recommended to use high-quality external ceramic capacitors in the
5 pF to 25 pF range (typ.), designed for high-frequency applications, and selected to match
the requirements of the crystal or resonator (see Figure 32). CL1 and CL2 are usually the
same size. The crystal manufacturer typically specifies a load capacitance which is the
series combination of CL1 and CL2. PCB and MCU pin capacitance must be included (10 pF
can be used as a rough estimate of the combined pin and board capacitance) when sizing
CL1 and CL2.
Note: For information on electing the crystal, refer to the application note AN2867 “Oscillator
design guide for ST microcontrollers” available from the ST website www.st.com.
Figure 32. Typical application with an 8 MHz crystal
1. REXT value depends on the crystal characteristics.
Low-speed external clock generated from a crystal/ceramic resonator
The low-speed external (LSE) clock can be supplied with a 32.768 kHz crystal/ceramic
resonator oscillator. All the information given in this paragraph are based on
characterization results obtained with typical external components specified in Table 32. In
the application, the resonator and the load capacitors have to be placed as close as
possible to the oscillator pins in order to minimize output distortion and startup stabilization
time. Refer to the crystal resonator manufacturer for more details on the resonator
characteristics (frequency, package, accuracy).
Table 31. HSE 4-26 MHz oscillator characteristics(1) (2)
1. Resonator characteristics given by the crystal/ceramic resonator manufacturer.
2. Based on characterization, not tested in production.
Symbol Parameter Conditions Min Typ Max Unit
fOSC_IN Oscillator frequency 4 - 26 MHz
RF Feedback resistor - 200 - kΩ
IDD HSE current consumption
VDD=3.3 V,
ESR= 30 Ω,
CL=5 pF@25 MHz
- 449 -
μA
VDD=3.3 V,
ESR= 30 Ω,
CL=10 pF@25 MHz
- 532 -
gm Oscillator transconductance Startup 5 - - mA/V
tSU(HSE
(3)
3. tSU(HSE) is the startup time measured from the moment it is enabled (by software) to a stabilized 8 MHz
oscillation is reached. This value is measured for a standard crystal resonator and it can vary significantly
with the crystal manufacturer
Startup time VDD is stabilized - 2 - ms
ai17530
OSC_OUT
OSC_IN fHSE
CL1
RF
STM32F
8 MHz
resonator
Resonator with
integrated capacitors
Bias
controlled
gain
CL2 REXT(1)
DocID022152 Rev 4 99/185
STM32F405xx, STM32F407xx Electrical characteristics
Note: For information on electing the crystal, refer to the application note AN2867 “Oscillator
design guide for ST microcontrollers” available from the ST website www.st.com.
Figure 33. Typical application with a 32.768 kHz crystal
5.3.9 Internal clock source characteristics
The parameters given in Table 33 and Table 34 are derived from tests performed under
ambient temperature and VDD supply voltage conditions summarized in Table 14.
High-speed internal (HSI) RC oscillator
Table 32. LSE oscillator characteristics (fLSE = 32.768 kHz) (1)
1. Guaranteed by design, not tested in production.
Symbol Parameter Conditions Min Typ Max Unit
RF Feedback resistor - 18.4 - MΩ
IDD LSE current consumption - - 1 μA
gm Oscillator Transconductance 2.8 - - μA/V
tSU(LSE)
(2)
2. tSU(LSE) is the startup time measured from the moment it is enabled (by software) to a stabilized
32.768 kHz oscillation is reached. This value is measured for a standard crystal resonator and it can vary
significantly with the crystal manufacturer
startup time VDD is stabilized - 2 - s
ai17531
OSC32_OUT
OSC32_IN fLSE
CL1
RF
STM32F
32.768 kHz
resonator
Resonator with
integrated capacitors
Bias
controlled
gain
CL2
Table 33. HSI oscillator characteristics (1)
Symbol Parameter Conditions Min Typ Max Unit
fHSI Frequency - 16 - MHz
ACCHSI
Accuracy of the HSI
oscillator
User-trimmed with the RCC_CR
register - - 1 %
Factorycalibrated
TA = –40 to
105 °C(2) –8 - 4.5 %
TA = –10 to 85 °C(2) –4 - 4 %
TA = 25 °C –1 - 1 %
tsu(HSI)
(3) HSI oscillator
startup time - 2.2 4 μs
IDD(HSI)
HSI oscillator
power consumption - 60 80 μA
Electrical characteristics STM32F405xx, STM32F407xx
100/185 DocID022152 Rev 4
Low-speed internal (LSI) RC oscillator
Figure 34. ACCLSI versus temperature
5.3.10 PLL characteristics
The parameters given in Table 35 and Table 36 are derived from tests performed under
temperature and VDD supply voltage conditions summarized in Table 14.
1. VDD = 3.3 V, TA = –40 to 105 °C unless otherwise specified.
2. Based on characterization, not tested in production.
3. Guaranteed by design, not tested in production.
Table 34. LSI oscillator characteristics (1)
1. VDD = 3 V, TA = –40 to 105 °C unless otherwise specified.
Symbol Parameter Min Typ Max Unit
fLSI
(2)
2. Based on characterization, not tested in production.
Frequency 17 32 47 kHz
tsu(LSI)
(3)
3. Guaranteed by design, not tested in production.
LSI oscillator startup time - 15 40 μs
IDD(LSI)
(3) LSI oscillator power consumption - 0.4 0.6 μA
MS19013V1
-40
-30
-20
-10
0
10
20
30
40
50
-45 -35 -25 -15 -5 5 15 25 35 45 55 65 75 85 95 105
Normalized deviati on (%)
Temperature (°C)
max
avg
min
DocID022152 Rev 4 101/185
STM32F405xx, STM32F407xx Electrical characteristics
Table 35. Main PLL characteristics
Symbol Parameter Conditions Min Typ Max Unit
fPLL_IN PLL input clock(1) 0.95(2) 1 2.10 MHz
fPLL_OUT PLL multiplier output clock 24 - 168 MHz
fPLL48_OUT
48 MHz PLL multiplier output
clock - 48 75 MHz
fVCO_OUT PLL VCO output 192 - 432 MHz
tLOCK PLL lock time
VCO freq = 192 MHz 75 - 200
μs
VCO freq = 432 MHz 100 - 300
Jitter(3)
Cycle-to-cycle jitter
System clock
120 MHz
RMS - 25 -
ps
peak
to
peak
- ±150 -
Period Jitter
RMS - 15 -
peak
to
peak
- ±200 -
Main clock output (MCO) for
RMII Ethernet
Cycle to cycle at 50 MHz
on 1000 samples - 32 -
Main clock output (MCO) for MII
Ethernet
Cycle to cycle at 25 MHz
on 1000 samples - 40 -
Bit Time CAN jitter Cycle to cycle at 1 MHz
on 1000 samples - 330 -
IDD(PLL)
(4) PLL power consumption on VDD
VCO freq = 192 MHz
VCO freq = 432 MHz
0.15
0.45
-
0.40
0.75
mA
IDDA(PLL)
(4) PLL power consumption on
VDDA
VCO freq = 192 MHz
VCO freq = 432 MHz
0.30
0.55
-
0.40
0.85
mA
1. Take care of using the appropriate division factor M to obtain the specified PLL input clock values. The M factor is shared
between PLL and PLLI2S.
2. Guaranteed by design, not tested in production.
3. The use of 2 PLLs in parallel could degraded the Jitter up to +30%.
4. Based on characterization, not tested in production.
Table 36. PLLI2S (audio PLL) characteristics
Symbol Parameter Conditions Min Typ Max Unit
fPLLI2S_IN PLLI2S input clock(1) 0.95(2) 1 2.10 MHz
fPLLI2S_OUT PLLI2S multiplier output clock - - 216 MHz
fVCO_OUT PLLI2S VCO output 192 - 432 MHz
tLOCK PLLI2S lock time
VCO freq = 192 MHz 75 - 200
μs
VCO freq = 432 MHz 100 - 300
Electrical characteristics STM32F405xx, STM32F407xx
102/185 DocID022152 Rev 4
5.3.11 PLL spread spectrum clock generation (SSCG) characteristics
The spread spectrum clock generation (SSCG) feature allows to reduce electromagnetic
interferences (see Table 43: EMI characteristics). It is available only on the main PLL.
Equation 1
The frequency modulation period (MODEPER) is given by the equation below:
fPLL_IN and fMod must be expressed in Hz.
As an example:
If fPLL_IN = 1 MHz, and fMOD = 1 kHz, the modulation depth (MODEPER) is given by
equation 1:
Jitter(3)
Master I2S clock jitter
Cycle to cycle at
12.288 MHz on
48KHz period,
N=432, R=5
RMS - 90 -
peak
to
peak
- ±280 - ps
Average frequency of
12.288 MHz
N = 432, R = 5
on 1000 samples
- 90 - ps
WS I2S clock jitter
Cycle to cycle at 48 KHz
on 1000 samples
- 400 - ps
IDD(PLLI2S)
(4) PLLI2S power consumption on
VDD
VCO freq = 192 MHz
VCO freq = 432 MHz
0.15
0.45
-
0.40
0.75
mA
IDDA(PLLI2S)
(4) PLLI2S power consumption on
VDDA
VCO freq = 192 MHz
VCO freq = 432 MHz
0.30
0.55
-
0.40
0.85
mA
1. Take care of using the appropriate division factor M to have the specified PLL input clock values.
2. Guaranteed by design, not tested in production.
3. Value given with main PLL running.
4. Based on characterization, not tested in production.
Table 36. PLLI2S (audio PLL) characteristics (continued)
Symbol Parameter Conditions Min Typ Max Unit
Table 37. SSCG parameters constraint
Symbol Parameter Min Typ Max(1) Unit
fMod Modulation frequency - - 10 KHz
md Peak modulation depth 0.25 - 2 %
MODEPER * INCSTEP - - 215−1 -
1. Guaranteed by design, not tested in production.
MODEPER = round[fPLL_IN ⁄ (4 × fMod)]
MODEPER round 106 4 10 3 = [ ⁄ ( × )] = 250
DocID022152 Rev 4 103/185
STM32F405xx, STM32F407xx Electrical characteristics
Equation 2
Equation 2 allows to calculate the increment step (INCSTEP):
fVCO_OUT must be expressed in MHz.
With a modulation depth (md) = ±2 % (4 % peak to peak), and PLLN = 240 (in MHz):
An amplitude quantization error may be generated because the linear modulation profile is
obtained by taking the quantized values (rounded to the nearest integer) of MODPER and
INCSTEP. As a result, the achieved modulation depth is quantized. The percentage
quantized modulation depth is given by the following formula:
As a result:
Figure 35 and Figure 36 show the main PLL output clock waveforms in center spread and
down spread modes, where:
F0 is fPLL_OUT nominal.
Tmode is the modulation period.
md is the modulation depth.
Figure 35. PLL output clock waveforms in center spread mode
INCSTEP = round[((215 – 1) × md × PLLN) ⁄ (100 × 5 × MODEPER)]
INCSTEP = round[((215 – 1) × 2 × 240) ⁄ (100 × 5 × 250)] = 126md(quantitazed)%
mdquantized% = (MODEPER × INCSTEP × 100 × 5) ⁄ ((215 – 1) × PLLN)
mdquantized% = (250 × 126 × 100 × 5) ⁄ ((215 – 1) × 240) = 2.002%(peak)
Frequency (PLL_OUT)
Time
F0
tmode
md
ai17291
md
2 x tmode
Electrical characteristics STM32F405xx, STM32F407xx
104/185 DocID022152 Rev 4
Figure 36. PLL output clock waveforms in down spread mode
5.3.12 Memory characteristics
Flash memory
The characteristics are given at TA = –40 to 105 °C unless otherwise specified.
The devices are shipped to customers with the Flash memory erased.
Time
ai17292
Frequency (PLL_OUT)
F0
2 x md
tmode 2 x tmode
Table 38. Flash memory characteristics
Symbol Parameter Conditions Min Typ Max Unit
IDD Supply current
Write / Erase 8-bit mode, VDD = 1.8 V - 5 -
Write / Erase 16-bit mode, VDD = 2.1 V - 8 - mA
Write / Erase 32-bit mode, VDD = 3.3 V - 12 -
Table 39. Flash memory programming
Symbol Parameter Conditions Min(1) Typ Max(1) Unit
tprog Word programming time Program/erase parallelism
(PSIZE) = x 8/16/32 - 16 100(2) μs
tERASE16KB Sector (16 KB) erase time
Program/erase parallelism
(PSIZE) = x 8 - 400 800
Program/erase parallelism ms
(PSIZE) = x 16 - 300 600
Program/erase parallelism
(PSIZE) = x 32 - 250 500
DocID022152 Rev 4 105/185
STM32F405xx, STM32F407xx Electrical characteristics
tERASE64KB Sector (64 KB) erase time
Program/erase parallelism
(PSIZE) = x 8 - 1200 2400
Program/erase parallelism ms
(PSIZE) = x 16 - 700 1400
Program/erase parallelism
(PSIZE) = x 32 - 550 1100
tERASE128KB Sector (128 KB) erase time
Program/erase parallelism
(PSIZE) = x 8 - 2 4
Program/erase parallelism s
(PSIZE) = x 16 - 1.3 2.6
Program/erase parallelism
(PSIZE) = x 32 - 1 2
tME Mass erase time
Program/erase parallelism
(PSIZE) = x 8 - 16 32
Program/erase parallelism s
(PSIZE) = x 16 - 11 22
Program/erase parallelism
(PSIZE) = x 32 - 8 16
Vprog Programming voltage
32-bit program operation 2.7 - 3.6 V
16-bit program operation 2.1 - 3.6 V
8-bit program operation 1.8 - 3.6 V
1. Based on characterization, not tested in production.
2. The maximum programming time is measured after 100K erase operations.
Table 39. Flash memory programming (continued)
Symbol Parameter Conditions Min(1) Typ Max(1) Unit
Electrical characteristics STM32F405xx, STM32F407xx
106/185 DocID022152 Rev 4
5.3.13 EMC characteristics
Susceptibility tests are performed on a sample basis during device characterization.
Functional EMS (electromagnetic susceptibility)
While a simple application is executed on the device (toggling 2 LEDs through I/O ports).
the device is stressed by two electromagnetic events until a failure occurs. The failure is
indicated by the LEDs:
• Electrostatic discharge (ESD) (positive and negative) is applied to all device pins until
a functional disturbance occurs. This test is compliant with the IEC 61000-4-2 standard.
• FTB: A burst of fast transient voltage (positive and negative) is applied to VDD and VSS
through a 100 pF capacitor, until a functional disturbance occurs. This test is compliant
with the IEC 61000-4-4 standard.
Table 40. Flash memory programming with VPP
Symbol Parameter Conditions Min(1) Typ Max(1)
1. Guaranteed by design, not tested in production.
Unit
tprog Double word programming
TA = 0 to +40 °C
VDD = 3.3 V
VPP = 8.5 V
- 16 100(2)
2. The maximum programming time is measured after 100K erase operations.
μs
tERASE16KB Sector (16 KB) erase time - 230 -
tERASE64KB Sector (64 KB) erase time - 490 - ms
tERASE128KB Sector (128 KB) erase time - 875 -
tME Mass erase time - 6.9 - s
Vprog Programming voltage 2.7 - 3.6 V
VPP VPP voltage range 7 - 9 V
IPP
Minimum current sunk on
the VPP pin 10 - - mA
tVPP
(3)
3. VPP should only be connected during programming/erasing.
Cumulative time during
which VPP is applied - - 1 hour
Table 41. Flash memory endurance and data retention
Symbol Parameter Conditions
Value
Unit
Min(1)
1. Based on characterization, not tested in production.
NEND Endurance
TA = –40 to +85 °C (6 suffix versions)
TA = –40 to +105 °C (7 suffix versions) 10 kcycles
tRET Data retention
1 kcycle(2) at TA = 85 °C
2. Cycling performed over the whole temperature range.
30
1 kcycle(2) at TA = 105 °C 10 Years
10 kcycles(2) at TA = 55 °C 20
DocID022152 Rev 4 107/185
STM32F405xx, STM32F407xx Electrical characteristics
A device reset allows normal operations to be resumed.
The test results are given in Table 42. They are based on the EMS levels and classes
defined in application note AN1709.
Designing hardened software to avoid noise problems
EMC characterization and optimization are performed at component level with a typical
application environment and simplified MCU software. It should be noted that good EMC
performance is highly dependent on the user application and the software in particular.
Therefore it is recommended that the user applies EMC software optimization and
prequalification tests in relation with the EMC level requested for his application.
Software recommendations
The software flowchart must include the management of runaway conditions such as:
• Corrupted program counter
• Unexpected reset
• Critical Data corruption (control registers...)
Prequalification trials
Most of the common failures (unexpected reset and program counter corruption) can be
reproduced by manually forcing a low state on the NRST pin or the Oscillator pins for 1
second.
To complete these trials, ESD stress can be applied directly on the device, over the range of
specification values. When unexpected behavior is detected, the software can be hardened
to prevent unrecoverable errors occurring (see application note AN1015).
Electromagnetic Interference (EMI)
The electromagnetic field emitted by the device are monitored while a simple application,
executing EEMBC? code, is running. This emission test is compliant with SAE IEC61967-2
standard which specifies the test board and the pin loading.
Table 42. EMS characteristics
Symbol Parameter Conditions Level/
Class
VFESD
Voltage limits to be applied on any I/O pin to
induce a functional disturbance
VDD = 3.3 V, LQFP176, TA = +25 °C,
fHCLK = 168 MHz, conforms to
IEC 61000-4-2
2B
VEFTB
Fast transient voltage burst limits to be
applied through 100 pF on VDD and VSS
pins to induce a functional disturbance
VDD = 3.3 V, LQFP176, TA =
+25 °C, fHCLK = 168 MHz, conforms
to IEC 61000-4-2
4A
Electrical characteristics STM32F405xx, STM32F407xx
108/185 DocID022152 Rev 4
5.3.14 Absolute maximum ratings (electrical sensitivity)
Based on three different tests (ESD, LU) using specific measurement methods, the device is
stressed in order to determine its performance in terms of electrical sensitivity.
Electrostatic discharge (ESD)
Electrostatic discharges (a positive then a negative pulse separated by 1 second) are
applied to the pins of each sample according to each pin combination. The sample size
depends on the number of supply pins in the device (3 parts × (n+1) supply pins). This test
conforms to the JESD22-A114/C101 standard.
Static latchup
Two complementary static tests are required on six parts to assess the latchup
performance:
• A supply overvoltage is applied to each power supply pin
• A current injection is applied to each input, output and configurable I/O pin
These tests are compliant with EIA/JESD 78A IC latchup standard.
Table 43. EMI characteristics
Symbol Parameter Conditions Monitored
frequency band
Max vs.
[fHSE/fCPU] Unit
25/168 MHz
SEMI Peak level
VDD = 3.3 V, TA = 25 °C, LQFP176
package, conforming to SAE J1752/3
EEMBC, code running from Flash with
ART accelerator enabled
0.1 to 30 MHz 32
30 to 130 MHz 25 dBμV
130 MHz to 1GHz 29
SAE EMI Level 4 -
VDD = 3.3 V, TA = 25 °C, LQFP176
package, conforming to SAE J1752/3
EEMBC, code running from Flash with
ART accelerator and PLL spread
spectrum enabled
0.1 to 30 MHz 19
30 to 130 MHz 16 dBμV
130 MHz to 1GHz 18
SAE EMI level 3.5 -
Table 44. ESD absolute maximum ratings
Symbol Ratings Conditions Class Maximum
value(1) Unit
VESD(HBM)
Electrostatic discharge
voltage (human body
model)
TA = +25 °C conforming to JESD22-A114 2 2000(2)
V
VESD(CDM)
Electrostatic discharge
voltage (charge device
model)
TA = +25 °C conforming to JESD22-C101 II 500
1. Based on characterization results, not tested in production.
2. On VBAT pin, VESD(HBM) is limited to 1000 V.
DocID022152 Rev 4 109/185
STM32F405xx, STM32F407xx Electrical characteristics
5.3.15 I/O current injection characteristics
As a general rule, current injection to the I/O pins, due to external voltage below VSS or
above VDD (for standard, 3 V-capable I/O pins) should be avoided during normal product
operation. However, in order to give an indication of the robustness of the microcontroller in
cases when abnormal injection accidentally happens, susceptibility tests are performed on a
sample basis during device characterization.
Functional susceptibilty to I/O current injection
While a simple application is executed on the device, the device is stressed by injecting
current into the I/O pins programmed in floating input mode. While current is injected into
the I/O pin, one at a time, the device is checked for functional failures.
The failure is indicated by an out of range parameter: ADC error above a certain limit (>5
LSB TUE), out of conventional limits of induced leakage current on adjacent pins (out of
5 uA/+0 uA range), or other functional failure (for example reset, oscillator frequency
deviation).
Negative induced leakage current is caused by negative injection and positive induced
leakage current by positive injection.
The test results are given in Table 46.
5.3.16 I/O port characteristics
General input/output characteristics
Unless otherwise specified, the parameters given in Table 47 are derived from tests
performed under the conditions summarized in Table 14. All I/Os are CMOS and TTL
compliant.
Table 45. Electrical sensitivities
Symbol Parameter Conditions Class
LU Static latch-up class TA = +105 °C conforming to JESD78A II level A
Table 46. I/O current injection susceptibility
Symbol Description
Functional susceptibility
Negative Unit
injection
Positive
injection
IINJ
(1)
1. It is recommended to add a Schottky diode (pin to ground) to analog pins which may potentially inject
negative currents.
Injected current on all FT pins –5 +0
mA
Injected current on any other pin –5 +5
Electrical characteristics STM32F405xx, STM32F407xx
110/185 DocID022152 Rev 4
All I/Os are CMOS and TTL compliant (no software configuration required). Their
characteristics cover more than the strict CMOS-technology or TTL parameters.
Output driving current
The GPIOs (general purpose input/outputs) can sink or source up to ±8 mA, and sink or
source up to ±20 mA (with a relaxed VOL/VOH) except PC13, PC14 and PC15 which can
sink or source up to ±3mA. When using the PC13 to PC15 GPIOs in output mode, the
speed should not exceed 2 MHz with a maximum load of 30 pF.
Table 47. I/O static characteristics
Symbol Parameter Conditions Min Typ Max Unit
VIL Input low level voltage TTL ports
2.7 V ≤ VDD ≤ 3.6 V
- - 0.8
V
VIH
(1) Input high level voltage 2.0 - -
VIL Input low level voltage
CMOS ports
1.8 V ≤ VDD ≤ 3.6 V
- - 0.3VDD
VIH
(1) Input high level voltage 0.7VDD
- -
- -
Vhys
I/O Schmitt trigger voltage hysteresis(2) - 200 -
IO FT Schmitt trigger voltage mV
hysteresis(2) 5% VDD
(3) - -
Ilkg
I/O input leakage current (4) VSS ≤ VIN ≤ VDD - - ±1
μA
I/O FT input leakage current (4) VIN = 5 V - - 3
RPU
Weak pull-up equivalent
resistor(5)
All pins
except for
PA10 and
PB12 VIN = VSS
30 40 50
kΩ
PA10 and
PB12 8 11 15
RPD
Weak pull-down
equivalent resistor
All pins
except for
PA10 and
PB12 VIN = VDD
30 40 50
PA10 and
PB12 8 11 15
CIO
(6) I/O pin capacitance 5 pF
1. Tested in production.
2. Hysteresis voltage between Schmitt trigger switching levels. Based on characterization, not tested in production.
3. With a minimum of 100 mV.
4. Leakage could be higher than the maximum value, if negative current is injected on adjacent pins.
5. Pull-up and pull-down resistors are designed with a true resistance in series with a switchable PMOS/NMOS. This
MOS/NMOS contribution to the series resistance is minimum (~10% order).
6. Guaranteed by design, not tested in production.
DocID022152 Rev 4 111/185
STM32F405xx, STM32F407xx Electrical characteristics
In the user application, the number of I/O pins which can drive current must be limited to
respect the absolute maximum rating specified in Section 5.2. In particular:
• The sum of the currents sourced by all the I/Os on VDD, plus the maximum Run
consumption of the MCU sourced on VDD, cannot exceed the absolute maximum rating
IVDD (see Table 12).
• The sum of the currents sunk by all the I/Os on VSS plus the maximum Run
consumption of the MCU sunk on VSS cannot exceed the absolute maximum rating
IVSS (see Table 12).
Output voltage levels
Unless otherwise specified, the parameters given in Table 48 are derived from tests
performed under ambient temperature and VDD supply voltage conditions summarized in
Table 14. All I/Os are CMOS and TTL compliant.
Input/output AC characteristics
The definition and values of input/output AC characteristics are given in Figure 37 and
Table 49, respectively.
Table 48. Output voltage characteristics(1)
1. PC13, PC14, PC15 and PI8 are supplied through the power switch. Since the switch only sinks a limited
amount of current (3 mA), the use of GPIOs PC13 to PC15 and PI8 in output mode is limited: the speed
should not exceed 2 MHz with a maximum load of 30 pF and these I/Os must not be used as a current
source (e.g. to drive an LED).
Symbol Parameter Conditions Min Max Unit
VOL
(2)
2. The IIO current sunk by the device must always respect the absolute maximum rating specified in Table 12
and the sum of IIO (I/O ports and control pins) must not exceed IVSS.
Output low level voltage for an I/O pin
when 8 pins are sunk at same time CMOS port
IIO = +8 mA
2.7 V < VDD < 3.6 V
- 0.4
V
VOH
(3)
3. The IIO current sourced by the device must always respect the absolute maximum rating specified in
Table 12 and the sum of IIO (I/O ports and control pins) must not exceed IVDD.
Output high level voltage for an I/O pin
when 8 pins are sourced at same time VDD–0.4 -
VOL
(2) Output low level voltage for an I/O pin
when 8 pins are sunk at same time TTL port
IIO =+ 8mA
2.7 V < VDD < 3.6 V
- 0.4
V
VOH
(3) Output high level voltage for an I/O pin
when 8 pins are sourced at same time 2.4 -
VOL
(2)(4)
4. Based on characterization data, not tested in production.
Output low level voltage for an I/O pin
when 8 pins are sunk at same time IIO = +20 mA
2.7 V < VDD < 3.6 V
- 1.3
V
VOH
(3)(4) Output high level voltage for an I/O pin
when 8 pins are sourced at same time VDD–1.3 -
VOL
(2)(4) Output low level voltage for an I/O pin
when 8 pins are sunk at same time IIO = +6 mA
2 V < VDD < 2.7 V
- 0.4
V
VOH
(3)(4) Output high level voltage for an I/O pin
when 8 pins are sourced at same time VDD–0.4 -
Electrical characteristics STM32F405xx, STM32F407xx
112/185 DocID022152 Rev 4
Unless otherwise specified, the parameters given in Table 49 are derived from tests
performed under the ambient temperature and VDD supply voltage conditions summarized
in Table 14.
Table 49. I/O AC characteristics(1)(2)(3)
OSPEEDRy
[1:0] bit
value(1)
Symbol Parameter Conditions Min Typ Max Unit
00
fmax(IO)out Maximum frequency(4)
CL = 50 pF, VDD > 2.70 V - - 2
MHz
CL = 50 pF, VDD > 1.8 V - - 2
CL = 10 pF, VDD > 2.70 V - - TBD
CL = 10 pF, VDD > 1.8 V - - TBD
tf(IO)out
Output high to low level fall
time CL = 50 pF, VDD = 1.8 V to
3.6 V
- - TBD
ns
tr(IO)out
Output low to high level rise
time - - TBD
01
fmax(IO)out Maximum frequency(4)
CL = 50 pF, VDD > 2.70 V - - 25
MHz
CL = 50 pF, VDD > 1.8 V - - 12.5(5)
CL = 10 pF, VDD > 2.70 V - - 50(5)
CL = 10 pF, VDD > 1.8 V - - TBD
tf(IO)out
Output high to low level fall
time
CL = 50 pF, VDD < 2.7 V - - TBD
ns
CL = 10 pF, VDD > 2.7 V - - TBD
tr(IO)out
Output low to high level rise
time
CL = 50 pF, VDD < 2.7 V - - TBD
CL = 10 pF, VDD > 2.7 V - - TBD
10
fmax(IO)out Maximum frequency(4)
CL = 40 pF, VDD > 2.70 V - - 50(5)
MHz
CL = 40 pF, VDD > 1.8 V - - 25
CL = 10 pF, VDD > 2.70 V - - 100(5)
CL = 10 pF, VDD > 1.8 V - - TBD
tf(IO)out
Output high to low level fall
time
CL = 50 pF,
2.4 < VDD < 2.7 V
- - TBD
CL = 10 pF, VDD > 2.7 V - - TBD ns
tr(IO)out
Output low to high level rise
time
CL = 50 pF,
2.4 < VDD < 2.7 V
- - TBD
CL = 10 pF, VDD > 2.7 V - - TBD
DocID022152 Rev 4 113/185
STM32F405xx, STM32F407xx Electrical characteristics
Figure 37. I/O AC characteristics definition
5.3.17 NRST pin characteristics
The NRST pin input driver uses CMOS technology. It is connected to a permanent pull-up
resistor, RPU (see Table 47).
Unless otherwise specified, the parameters given in Table 50 are derived from tests
performed under the ambient temperature and VDD supply voltage conditions summarized
in Table 14.
11
Fmax(IO)ou
t
Maximum frequency(4)
CL = 30 pF, VDD > 2.70 V - - 100(5)
MHz
CL = 30 pF, VDD > 1.8 V - - 50(5)
CL = 10 pF, VDD > 2.70 V - - 200(5)
CL = 10 pF, VDD > 1.8 V - - TBD
tf(IO)out
Output high to low level fall
time
CL = 20 pF,
2.4 < VDD < 2.7 V
- - TBD
ns
CL = 10 pF, VDD > 2.7 V - - TBD
tr(IO)out
Output low to high level rise
time
CL = 20 pF,
2.4 < VDD < 2.7 V
- - TBD
CL = 10 pF, VDD > 2.7 V - - TBD
- tEXTIpw
Pulse width of external
signals detected by the EXTI
controller
10 - - ns
1. Based on characterization data, not tested in production.
2. The I/O speed is configured using the OSPEEDRy[1:0] bits. Refer to the STM32F20/21xxx reference manual for a
description of the GPIOx_SPEEDR GPIO port output speed register.
3. TBD stands for “to be defined”.
4. The maximum frequency is defined in Figure 37.
5. For maximum frequencies above 50 MHz, the compensation cell should be used.
Table 49. I/O AC characteristics(1)(2)(3) (continued)
OSPEEDRy
[1:0] bit
value(1)
Symbol Parameter Conditions Min Typ Max Unit
ai14131
10%
90%
50%
tr(IO)out
OUTPUT
EXTERNAL
ON 50pF
Maximum frequency is achieved if (tr + tf) ≤ 2/3)T and if the duty cycle is (45-55%)
10%
50%
90%
when loaded by 50pF
T
tr(IO)out
Electrical characteristics STM32F405xx, STM32F407xx
114/185 DocID022152 Rev 4
Figure 38. Recommended NRST pin protection
1. The reset network protects the device against parasitic resets.
2. The user must ensure that the level on the NRST pin can go below the VIL(NRST) max level specified in
Table 50. Otherwise the reset is not taken into account by the device.
5.3.18 TIM timer characteristics
The parameters given in Table 51 and Table 52 are guaranteed by design.
Refer to Section 5.3.16: I/O port characteristics for details on the input/output alternate
function characteristics (output compare, input capture, external clock, PWM output).
Table 50. NRST pin characteristics
Symbol Parameter Conditions Min Typ Max Unit
VIL(NRST)
(1)
1. Guaranteed by design, not tested in production.
NRST Input low level voltage TTL ports
2.7 V ≤ VDD
≤ 3.6 V
- - 0.8
V
VIH(NRST)
(1) NRST Input high level voltage 2 - -
VIL(NRST)
(1) NRST Input low level voltage CMOS ports
1.8 V ≤ VDD
≤ 3.6 V
- 0.3VDD
VIH(NRST)
(1) NRST Input high level voltage 0.7VDD -
Vhys(NRST)
NRST Schmitt trigger voltage
hysteresis - 200 - mV
RPU Weak pull-up equivalent resistor(2)
2. The pull-up is designed with a true resistance in series with a switchable PMOS. This PMOS contribution to
the series resistance must be minimum (~10% order).
VIN = VSS 30 40 50 kΩ
VF(NRST)
(1) NRST Input filtered pulse - - 100 ns
VNF(NRST)
(1) NRST Input not filtered pulse VDD > 2.7 V 300 - - ns
TNRST_OUT Generated reset pulse duration Internal
Reset source 20 - - μs
ai14132c
STM32Fxxx
NRST(2) RPU
VDD
Filter
Internal Reset
0.1 μF
External
reset circuit(1)
DocID022152 Rev 4 115/185
STM32F405xx, STM32F407xx Electrical characteristics
Table 51. Characteristics of TIMx connected to the APB1 domain(1)
1. TIMx is used as a general term to refer to the TIM2, TIM3, TIM4, TIM5, TIM6, TIM7, and TIM12 timers.
Symbol Parameter Conditions Min Max Unit
tres(TIM) Timer resolution time
AHB/APB1
prescaler distinct
from 1, fTIMxCLK =
84 MHz
1 - tTIMxCLK
11.9 - ns
AHB/APB1
prescaler = 1,
fTIMxCLK = 42 MHz
1 - tTIMxCLK
23.8 - ns
fEXT
Timer external clock
frequency on CH1 to CH4
fTIMxCLK = 84 MHz
APB1= 42 MHz
0 fTIMxCLK/2 MHz
0 42 MHz
ResTIM Timer resolution - 16/32 bit
tCOUNTER
16-bit counter clock
period when internal clock
is selected
1 65536 tTIMxCLK
0.0119 780 μs
32-bit counter clock
period when internal clock
is selected
1 - tTIMxCLK
0.0119 51130563 μs
tMAX_COUNT Maximum possible count
- 65536 × 65536 tTIMxCLK
- 51.1 s
Electrical characteristics STM32F405xx, STM32F407xx
116/185 DocID022152 Rev 4
5.3.19 Communications interfaces
I2C interface characteristics
The STM32F405xx and STM32F407xx I2C interface meets the requirements of the
standard I2C communication protocol with the following restrictions: the I/O pins SDA and
SCL are mapped to are not “true” open-drain. When configured as open-drain, the PMOS
connected between the I/O pin and VDD is disabled, but is still present.
The I2C characteristics are described in Table 53. Refer also to Section 5.3.16: I/O port
characteristics for more details on the input/output alternate function characteristics (SDA
and SCL).
Table 52. Characteristics of TIMx connected to the APB2 domain(1)
1. TIMx is used as a general term to refer to the TIM1, TIM8, TIM9, TIM10, and TIM11 timers.
Symbol Parameter Conditions Min Max Unit
tres(TIM) Timer resolution time
AHB/APB2
prescaler distinct
from 1, fTIMxCLK =
168 MHz
1 - tTIMxCLK
5.95 - ns
AHB/APB2
prescaler = 1,
fTIMxCLK = 84 MHz
1 - tTIMxCLK
11.9 - ns
fEXT
Timer external clock
frequency on CH1 to
CH4
fTIMxCLK =
168 MHz
APB2 = 84 MHz
0 fTIMxCLK/2 MHz
0 84 MHz
ResTIM Timer resolution - 16 bit
tCOUNTER
16-bit counter clock
period when internal
clock is selected
1 65536 tTIMxCLK
tMAX_COUNT Maximum possible count - 32768 tTIMxCLK
Table 53. I2C characteristics
Symbol Parameter
Standard mode I2C(1) Fast mode I2C(1)(2)
Unit
Min Max Min Max
tw(SCLL) SCL clock low time 4.7 - 1.3 -
μs
tw(SCLH) SCL clock high time 4.0 - 0.6 -
tsu(SDA) SDA setup time 250 - 100 -
ns
th(SDA) SDA data hold time 0(3) - 0 900(4)
tr(SDA)
tr(SCL)
SDA and SCL rise time - 1000 20 + 0.1Cb 300
tf(SDA)
tf(SCL)
SDA and SCL fall time - 300 - 300
DocID022152 Rev 4 117/185
STM32F405xx, STM32F407xx Electrical characteristics
Figure 39. I2C bus AC waveforms and measurement circuit
1. Rs= series protection resistor.
2. Rp = external pull-up resistor.
3. VDD_I2C is the I2C bus power supply.
th(STA) Start condition hold time 4.0 - 0.6 -
μs
tsu(STA)
Repeated Start condition
setup time 4.7 - 0.6 -
tsu(STO) Stop condition setup time 4.0 - 0.6 - μs
tw(STO:STA)
Stop to Start condition time
(bus free) 4.7 - 1.3 - μs
Cb
Capacitive load for each bus
line - 400 - 400 pF
1. Guaranteed by design, not tested in production.
2. fPCLK1 must be at least 2 MHz to achieve standard mode I2C frequencies. It must be at least 4 MHz to
achieve fast mode I2C frequencies, and a multiple of 10 MHz to reach the 400 kHz maximum I2C fast mode
clock.
3. The device must internally provide a hold time of at least 300 ns for the SDA signal in order to bridge the
undefined region of the falling edge of SCL.
4. The maximum data hold time has only to be met if the interface does not stretch the low period of SCL
signal.
Table 53. I2C characteristics (continued)
Symbol Parameter
Standard mode I2C(1) Fast mode I2C(1)(2)
Unit
Min Max Min Max
ai14979c
S TAR T
SD A
RP
I²C bus
VDD_I2C
STM32Fxx
SDA
SCL
tf(SDA) tr(SDA)
SCL
th(STA)
tw(SCLH)
tw(SCLL)
tsu(SDA)
tr(SCL) tf(SCL)
th(SDA)
S TAR T REPEATED
t S TAR T su(STA)
tsu(STO)
S TOP tw(STO:STA)
VDD_I2C
RP RS
RS
Electrical characteristics STM32F405xx, STM32F407xx
118/185 DocID022152 Rev 4
SPI interface characteristics
Unless otherwise specified, the parameters given in Table 55 for SPI are derived from tests
performed under the ambient temperature, fPCLKx frequency and VDD supply voltage
conditions summarized in Table 14 with the following configuration:
• Output speed is set to OSPEEDRy[1:0] = 10
• Capacitive load C = 30 pF
• Measurement points are done at CMOS levels: 0.5 VDD
Refer to Section 5.3.16: I/O port characteristics for more details on the input/output alternate
function characteristics (NSS, SCK, MOSI, MISO).
Table 54. SCL frequency (fPCLK1= 42 MHz.,VDD = 3.3 V)(1)(2)
1. RP = External pull-up resistance, fSCL = I2C speed,
2. For speeds around 200 kHz, the tolerance on the achieved speed is of ±5%. For other speed ranges, the
tolerance on the achieved speed ±2%. These variations depend on the accuracy of the external
components used to design the application.
fSCL (kHz)
I2C_CCR value
RP = 4.7 kΩ
400 0x8019
300 0x8021
200 0x8032
100 0x0096
50 0x012C
20 0x02EE
Table 55. SPI dynamic characteristics(1)
Symbol Parameter Conditions Min Typ Max Unit
fSCK
SPI clock frequency
Master mode, SPI1,
2.7V < VDD < 3.6V
- -
42
MHz
Slave mode, SPI1,
2.7V < VDD < 3.6V 42
1/tc(SCK)
Master mode, SPI1/2/3,
1.7V < VDD < 3.6V
- -
21
Slave mode, SPI1/2/3,
1.7V < VDD < 3.6V 21
Duty(SCK) Duty cycle of SPI clock
frequency Slave mode 30 50 70 %
DocID022152 Rev 4 119/185
STM32F405xx, STM32F407xx Electrical characteristics
tw(SCKH)
SCK high and low time
Master mode, SPI presc = 2,
2.7V < VDD < 3.6V TPCLK-0.5 TPCLK TPCLK+0.5
ns
tw(SCKL)
Master mode, SPI presc = 2,
1.7V < VDD < 3.6V TPCLK-2 TPCLK TPCLK+2
tsu(NSS) NSS setup time Slave mode, SPI presc = 2 4 x TPCLK - -
th(NSS) NSS hold time Slave mode, SPI presc = 2 2 x TPCLK
tsu(MI) Data input setup time
Master mode 6.5 - -
tsu(SI) Slave mode 2.5 - -
th(MI) Data input hold time
Master mode 2.5 - -
th(SI) Slave mode 4 - -
ta(SO)
(2) Data output access time Slave mode, SPI presc = 2 0 - 4 x TPCLK
tdis(SO)
(3) Data output disable time
Slave mode, SPI1,
2.7V < VDD < 3.6V 0 - 7.5
Slave mode, SPI1/2/3
1.7V < VDD < 3.6V 0 - 16.5
tv(SO)
th(SO)
Data output valid/hold time
Slave mode (after enable edge),
SPI1, 2.7V < VDD < 3.6V - 11 13
Slave mode (after enable edge),
SPI2/3, 2.7V < VDD < 3.6V - 12 16.5
Slave mode (after enable edge),
SPI1, 1.7V < VDD < 3.6V - 15.5 19
Slave mode (after enable edge),
SPI2/3, 1.7V < VDD < 3.6V - 18 20.5
tv(MO) Data output valid time
Master mode (after enable edge),
SPI1 , 2.7V < VDD < 3.6V - - 2.5
Master mode (after enable edge),
SPI1/2/3 , 1.7V < VDD < 3.6V - - 4.5
th(MO) Data output hold time Master mode (after enable edge) 0 - -
1. Data based on characterization results, not tested in production.
2. Min time is for the minimum time to drive the output and the max time is for the maximum time to validate the data.
3. Min time is for the minimum time to invalidate the output and the max time is for the maximum time to put the data in Hi-Z.
Table 55. SPI dynamic characteristics(1) (continued)
Symbol Parameter Conditions Min Typ Max Unit
Electrical characteristics STM32F405xx, STM32F407xx
120/185 DocID022152 Rev 4
Figure 40. SPI timing diagram - slave mode and CPHA = 0
Figure 41. SPI timing diagram - slave mode and CPHA = 1
ai14134c
SCK Input
CPHA=0
MOSI
INPUT
MISO
OUT PUT
CPHA=0
MSB O UT
MSB IN
BIT6 OUT
LSB IN
LSB OUT
CPOL=0
CPOL=1
BIT1 IN
NSS input
tSU(NSS)
tc(SCK)
th(NSS)
ta(SO)
tw(SCKH)
tw(SCKL)
tv(SO) th(SO) tr(SCK)
tf(SCK)
tdis(SO)
tsu(SI)
th(SI)
ai14135
SCK Input
CPHA=1
MOSI
INPUT
MISO
OUT PUT
CPHA=1
MSB O UT
MSB IN
BIT6 OUT
LSB IN
LSB OUT
CPOL=0
CPOL=1
BIT1 IN
tSU(NSS) tc(SCK) th(NSS)
ta(SO)
tw(SCKH)
tw(SCKL)
tv(SO) th(SO)
tr(SCK)
tf(SCK)
tdis(SO)
tsu(SI) th(SI)
NSS input
DocID022152 Rev 4 121/185
STM32F405xx, STM32F407xx Electrical characteristics
Figure 42. SPI timing diagram - master mode
ai14136
SCK Input
CPHA=0
MOSI
OUTUT
MISO
INPUT
CPHA=0
MSBIN
MSB OUT
BIT6 IN
LSB OUT
LSB IN
CPOL=0
CPOL=1
BIT1 OUT
NSS input
tc(SCK)
tw(SCKH)
tw(SCKL)
tr(SCK)
tf(SCK)
th(MI)
High
SCK Input
CPHA=1
CPHA=1
CPOL=0
CPOL=1
tsu(MI)
tv(MO) th(MO)
Electrical characteristics STM32F405xx, STM32F407xx
122/185 DocID022152 Rev 4
I2S interface characteristics
Unless otherwise specified, the parameters given in Table 56 for the i2S interface are
derived from tests performed under the ambient temperature, fPCLKx frequency and VDD
supply voltage conditions summarized in Table 14, with the following configuration:
• Output speed is set to OSPEEDRy[1:0] = 10
• Capacitive load C = 30 pF
• Measurement points are done at CMOS levels: 0.5 VDD
Refer to Section 5.3.16: I/O port characteristics for more details on the input/output alternate
function characteristics (CK, SD, WS).
Note: Refer to the I2S section of RM0090 reference manual for more details on the sampling
frequency (FS). fMCK, fCK, and DCK values reflect only the digital peripheral behavior. The
value of these parameters might be slightly impacted by the source clock accuracy. DCK
depends mainly on the value of ODD bit. The digital contribution leads to a minimum value
of I2SDIV / (2 x I2SDIV + ODD) and a maximum value of (I2SDIV + ODD) / (2 x I2SDIV +
ODD). FS maximum value is supported for each mode/condition.
Table 56. I2S dynamic characteristics(1)
Symbol Parameter Conditions Min Max Unit
fMCK I2S main clock output - 256 x
8K 256 x FS
(2) MHz
fCK I2S clock frequency
Master data: 32 bits - 64 x FS MHz
Slave data: 32 bits - 64 x FS
DCK I2S clock frequency duty cycle Slave receiver 30 70 %
tv(WS) WS valid time Master mode 0 6
ns
th(WS) WS hold time Master mode 0 -
tsu(WS) WS setup time Slave mode 1 -
th(WS) WS hold time Slave mode 0 -
tsu(SD_MR) Data input setup time
Master receiver 7.5 -
tsu(SD_SR) Slave receiver 2 -
th(SD_MR) Data input hold time
Master receiver 0 -
th(SD_SR) Slave receiver 0 -
tv(SD_ST)
th(SD_ST) Data output valid time
Slave transmitter (after enable edge) - 27
tv(SD_MT) Master transmitter (after enable edge) - 20
th(SD_MT) Data output hold time Master transmitter (after enable edge) 2.5 -
1. Data based on characterization results, not tested in production.
2. The maximum value of 256 x FS is 42 MHz (APB1 maximum frequency).
DocID022152 Rev 4 123/185
STM32F405xx, STM32F407xx Electrical characteristics
Figure 43. I2S slave timing diagram (Philips protocol)
1. LSB transmit/receive of the previously transmitted byte. No LSB transmit/receive is sent before the first
byte.
Figure 44. I2S master timing diagram (Philips protocol)(1)
1. Based on characterization, not tested in production.
2. LSB transmit/receive of the previously transmitted byte. No LSB transmit/receive is sent before the first
byte.
USB OTG FS characteristics
This interface is present in both the USB OTG HS and USB OTG FS controllers. CK Input
CPOL = 0
CPOL = 1
tc(CK)
WS input
SDtransmit
SDreceive
tw(CKH) tw(CKL)
tsu(WS) tv(SD_ST) th(SD_ST)
th(WS)
tsu(SD_SR) th(SD_SR)
MSB receive Bitn receive LSB receive
MSB transmit Bitn transmit LSB transmit
ai14881b
LSB receive(2)
LSB transmit(2)
CK output
CPOL = 0
CPOL = 1
tc(CK)
WS output
SDreceive
SDtransmit
tw(CKH)
tw(CKL)
tsu(SD_MR)
tv(SD_MT) th(SD_MT)
th(WS)
th(SD_MR)
MSB receive Bitn receive LSB receive
MSB transmit Bitn transmit LSB transmit
ai14884b
tf(CK) tr(CK)
tv(WS)
LSB receive(2)
LSB transmit(2)
Electrical characteristics STM32F405xx, STM32F407xx
124/185 DocID022152 Rev 4
Figure 45. USB OTG FS timings: definition of data signal rise and fall time
Table 57. USB OTG FS startup time
Symbol Parameter Max Unit
tSTARTUP
(1)
1. Guaranteed by design, not tested in production.
USB OTG FS transceiver startup time 1 μs
Table 58. USB OTG FS DC electrical characteristics
Symbol Parameter Conditions Min.(1)
1. All the voltages are measured from the local ground potential.
Typ. Max.(1) Unit
Input
levels
VDD
USB OTG FS operating
voltage 3.0(2)
2. The STM32F405xx and STM32F407xx USB OTG FS functionality is ensured down to 2.7 V but not the full
USB OTG FS electrical characteristics which are degraded in the 2.7-to-3.0 V VDD voltage range.
- 3.6 V
VDI
(3)
3. Guaranteed by design, not tested in production.
Differential input sensitivity I(USB_FS_DP/DM,
USB_HS_DP/DM) 0.2 - -
VCM V
(3) Differential common mode
range Includes VDI range 0.8 - 2.5
VSE
(3) Single ended receiver
threshold 1.3 - 2.0
Output
levels
VOL Static output level low RL of 1.5 kΩ to 3.6 V(4)
4. RL is the load connected on the USB OTG FS drivers
- - 0.3
V
VOH Static output level high RL of 15 kΩ to VSS
(4) 2.8 - 3.6
RPD
PA11, PA12, PB14, PB15
(USB_FS_DP/DM,
USB_HS_DP/DM)
VIN = VDD
17 21 24
kΩ
PA9, PB13
(OTG_FS_VBUS,
OTG_HS_VBUS)
0.65 1.1 2.0
RPU
PA12, PB15 (USB_FS_DP,
USB_HS_DP) VIN = VSS 1.5 1.8 2.1
PA9, PB13
(OTG_FS_VBUS,
OTG_HS_VBUS)
VIN = VSS 0.25 0.37 0.55
ai14137
tf
Differen tial
Data L ines
VSS
VCRS
tr
Crossover
points
DocID022152 Rev 4 125/185
STM32F405xx, STM32F407xx Electrical characteristics
USB HS characteristics
Unless otherwise specified, the parameters given in Table 62 for ULPI are derived from
tests performed under the ambient temperature, fHCLK frequency summarized in Table 61
and VDD supply voltage conditions summarized in Table 60, with the following configuration:
• Output speed is set to OSPEEDRy[1:0] = 10
• Capacitive load C = 30 pF
• Measurement points are done at CMOS levels: 0.5VDD.
Refer to Section Section 5.3.16: I/O port characteristics for more details on the
input/outputcharacteristics.
Table 59. USB OTG FS electrical characteristics(1)
1. Guaranteed by design, not tested in production.
Driver characteristics
Symbol Parameter Conditions Min Max Unit
tr Rise time(2)
2. Measured from 10% to 90% of the data signal. For more detailed informations, please refer to USB
Specification - Chapter 7 (version 2.0).
CL = 50 pF 4 20 ns
tf Fall time(2) CL = 50 pF 4 20 ns
trfm Rise/ fall time matching tr/tf 90 110 %
VCRS Output signal crossover voltage 1.3 2.0 V
Table 60. USB HS DC electrical characteristics
Symbol Parameter Min.(1)
1. All the voltages are measured from the local ground potential.
Max.(1) Unit
Input level VDD USB OTG HS operating voltage 2.7 3.6 V
Table 61. USB HS clock timing parameters(1)
Parameter Symbol Min Nominal Max Unit
fHCLK value to guarantee proper operation of
USB HS interface 30 MHz
Frequency (first transition) 8-bit ±10% FSTART_8BIT 54 60 66 MHz
Frequency (steady state) ±500 ppm FSTEADY 59.97 60 60.03 MHz
Duty cycle (first transition) 8-bit ±10% DSTART_8BIT 40 50 60 %
Duty cycle (steady state) ±500 ppm DSTEADY 49.975 50 50.025 %
Time to reach the steady state frequency and
duty cycle after the first transition TSTEADY - - 1.4 ms
Clock startup time after the
de-assertion of SuspendM
Peripheral TSTART_DEV - - 5.6
ms
Host TSTART_HOST - - -
PHY preparation time after the first transition
of the input clock TPREP - - - μs
Electrical characteristics STM32F405xx, STM32F407xx
126/185 DocID022152 Rev 4
Figure 46. ULPI timing diagram
Ethernet characteristics
Unless otherwise specified, the parameters given in Table 64, Table 65 and Table 66 for
SMI, RMII and MII are derived from tests performed under the ambient temperature, fHCLK
frequency summarized in Table 14 and VDD supply voltage conditions summarized in
Table 63, with the following configuration:
• Output speed is set to OSPEEDRy[1:0] = 10
• Capacitive load C = 30 pF
• Measurement points are done at CMOS levels: 0.5VDD.
Refer to Section 5.3.16: I/O port characteristics for more details on the input/output
characteristics.
1. Guaranteed by design, not tested in production.
Table 62. ULPI timing
Parameter Symbol
Value(1)
1. VDD = 2.7 V to 3.6 V and TA = –40 to 85 °C.
Unit
Min. Max.
Control in (ULPI_DIR) setup time
tSC
- 2.0
ns
Control in (ULPI_NXT) setup time - 1.5
Control in (ULPI_DIR, ULPI_NXT) hold time tHC 0 -
Data in setup time tSD - 2.0
Data in hold time tHD 0 -
Control out (ULPI_STP) setup time and hold time tDC - 9.2
Data out available from clock rising edge tDD - 10.7
Clock
Control In
(ULPI_DIR,
ULPI_NXT)
data In
(8-bit)
Control out
(ULPI_STP)
data out
(8-bit)
tDD
tDC
tSD tHD
tSC tHC
ai17361c
tDC
DocID022152 Rev 4 127/185
STM32F405xx, STM32F407xx Electrical characteristics
Table 64 gives the list of Ethernet MAC signals for the SMI (station management interface)
and Figure 47 shows the corresponding timing diagram.
Figure 47. Ethernet SMI timing diagram
Table 65 gives the list of Ethernet MAC signals for the RMII and Figure 48 shows the
corresponding timing diagram.
Figure 48. Ethernet RMII timing diagram
Table 63. Ethernet DC electrical characteristics
Symbol Parameter Min.(1)
1. All the voltages are measured from the local ground potential.
Max.(1) Unit
Input level VDD Ethernet operating voltage 2.7 3.6 V
Table 64. Dynamic characteristics: Ehternet MAC signals for SMI(1)
1. Data based on characterization results, not tested in production.
Symbol Parameter Min Typ Max Unit
tMDC MDC cycle time( 2.38 MHz) 411 420 425
ns
Td(MDIO) Write data valid time 6 10 13
tsu(MDIO) Read data setup time 12 - -
th(MDIO) Read data hold time 0 - -
MS31384V1
ETH_MDC
ETH_MDIO(O)
ETH_MDIO(I)
tMDC
td(MDIO)
tsu(MDIO) th(MDIO)
RMII_REF_CLK
RMII_TX_EN
RMII_TXD[1:0]
RMII_RXD[1:0]
RMII_CRS_DV
td(TXEN)
td(TXD)
tsu(RXD)
tsu(CRS)
tih(RXD)
tih(CRS)
ai15667
Electrical characteristics STM32F405xx, STM32F407xx
128/185 DocID022152 Rev 4
Table 66 gives the list of Ethernet MAC signals for MII and Figure 48 shows the
corresponding timing diagram.
Figure 49. Ethernet MII timing diagram
Table 65. Dynamic characteristics: Ethernet MAC signals for RMII
Symbol Rating Min Typ Max Unit
tsu(RXD) Receive data setup time 2 - - ns
tih(RXD) Receive data hold time 1 - - ns
tsu(CRS) Carrier sense set-up time 0.5 - - ns
tih(CRS) Carrier sense hold time 2 - - ns
td(TXEN) Transmit enable valid delay time 8 9.5 11 ns
td(TXD) Transmit data valid delay time 8.5 10 11.5 ns
Table 66. Dynamic characteristics: Ethernet MAC signals for MII(1)
1. Data based on characterization results, not tested in production.
Symbol Parameter Min Typ Max Unit
tsu(RXD) Receive data setup time 9 -
ns
tih(RXD) Receive data hold time 10 -
tsu(DV) Data valid setup time 9 -
tih(DV) Data valid hold time 8 -
tsu(ER) Error setup time 6 -
tih(ER) Error hold time 8 -
td(TXEN) Transmit enable valid delay time 0 10 14
td(TXD) Transmit data valid delay time 0 10 15
MII_RX_CLK
MII_RXD[3:0]
MII_RX_DV
MII_RX_ER
td(TXEN)
td(TXD)
tsu(RXD)
tsu(ER)
tsu(DV)
tih(RXD)
tih(ER)
tih(DV)
ai15668
MII_TX_CLK
MII_TX_EN
MII_TXD[3:0]
DocID022152 Rev 4 129/185
STM32F405xx, STM32F407xx Electrical characteristics
CAN (controller area network) interface
Refer to Section 5.3.16: I/O port characteristics for more details on the input/output alternate
function characteristics (CANTX and CANRX).
5.3.20 12-bit ADC characteristics
Unless otherwise specified, the parameters given in Table 67 are derived from tests
performed under the ambient temperature, fPCLK2 frequency and VDDA supply voltage
conditions summarized in Table 14.
Table 67. ADC characteristics
Symbol Parameter Conditions Min Typ Max Unit
VDDA Power supply 1.8(1) - 3.6 V
VREF+ Positive reference voltage 1.8(1)(2)(3) - VDDA V
fADC ADC clock frequency
VDDA = 1.8(1)(3) to
2.4 V 0.6 15 18 MHz
VDDA = 2.4 to 3.6 V(3) 0.6 30 36 MHz
fTRIG
(4) External trigger frequency
fADC = 30 MHz,
12-bit resolution - - 1764 kHz
- - 17 1/fADC
VAIN Conversion voltage range(5) 0 (VSSA or VREFtied
to ground) - VREF+ V
RAIN
(4) External input impedance See Equation 1 for
details - - 50 κΩ
RADC
(4)(6) Sampling switch resistance - - 6 κΩ
CADC
(4) Internal sample and hold
capacitor - 4 - pF
tlat
(4) Injection trigger conversion
latency
fADC = 30 MHz - - 0.100 μs
- - 3(7) 1/fADC
tlatr
(4) Regular trigger conversion
latency
fADC = 30 MHz - - 0.067 μs
- - 2(7) 1/fADC
tS
(4) Sampling time
fADC = 30 MHz 0.100 - 16 μs
3 - 480 1/fADC
tSTAB
(4) Power-up time - 2 3 μs
Electrical characteristics STM32F405xx, STM32F407xx
130/185 DocID022152 Rev 4
Equation 1: RAIN max formula
The formula above (Equation 1) is used to determine the maximum external impedance
allowed for an error below 1/4 of LSB. N = 12 (from 12-bit resolution) and k is the number of
sampling periods defined in the ADC_SMPR1 register.
tCONV
(4) Total conversion time (including
sampling time)
fADC = 30 MHz
12-bit resolution
0.50 - 16.40 μs
fADC = 30 MHz
10-bit resolution
0.43 - 16.34 μs
fADC = 30 MHz
8-bit resolution
0.37 - 16.27 μs
fADC = 30 MHz
6-bit resolution
0.30 - 16.20 μs
9 to 492 (tS for sampling +n-bit resolution for successive
approximation) 1/fADC
fS
(4)
Sampling rate
(fADC = 30 MHz, and
tS = 3 ADC cycles)
12-bit resolution
Single ADC
- - 2 Msps
12-bit resolution
Interleave Dual ADC
mode
- - 3.75 Msps
12-bit resolution
Interleave Triple ADC
mode
- - 6 Msps
IVREF+
(4)
ADC VREF DC current
consumption in conversion
mode
- 300 500 μA
IVDDA
(4)
ADC VDDA DC current
consumption in conversion
mode
- 1.6 1.8 mA
1. VDD/VDDA minimum value of 1.7 V is obtained when the device operates in reduced temperature range, and with the use of
an external power supply supervisor (refer to Section : Internal reset OFF).
2. It is recommended to maintain the voltage difference between VREF+ and VDDA below 1.8 V.
3. VDDA -VREF+ < 1.2 V.
4. Based on characterization, not tested in production.
5. VREF+ is internally connected to VDDA and VREF- is internally connected to VSSA.
6. RADC maximum value is given for VDD=1.8 V, and minimum value for VDD=3.3 V.
7. For external triggers, a delay of 1/fPCLK2 must be added to the latency specified in Table 67.
Table 67. ADC characteristics (continued)
Symbol Parameter Conditions Min Typ Max Unit
RAIN
(k – 0.5)
fADC CADC 2N + 2 × × ln( )
= -------------------------------------------------------------- – RADC
DocID022152 Rev 4 131/185
STM32F405xx, STM32F407xx Electrical characteristics
a
Note: ADC accuracy vs. negative injection current: injecting a negative current on any analog
input pins should be avoided as this significantly reduces the accuracy of the conversion
being performed on another analog input. It is recommended to add a Schottky diode (pin to
ground) to analog pins which may potentially inject negative currents.
Any positive injection current within the limits specified for IINJ(PIN) and ΣIINJ(PIN) in
Section 5.3.16 does not affect the ADC accuracy.
Figure 50. ADC accuracy characteristics
1. See also Table 68.
2. Example of an actual transfer curve.
3. Ideal transfer curve.
4. End point correlation line.
5. ET = Total Unadjusted Error: maximum deviation between the actual and the ideal transfer curves.
EO = Offset Error: deviation between the first actual transition and the first ideal one.
Table 68. ADC accuracy at fADC = 30 MHz(1)
1. Better performance could be achieved in restricted VDD, frequency and temperature ranges.
Symbol Parameter Test conditions Typ Max(2)
2. Based on characterization, not tested in production.
Unit
ET Total unadjusted error
fPCLK2 = 60 MHz,
fADC = 30 MHz, RAIN < 10 kΩ,
VDDA = 1.8(3) to 3.6 V
3. VDD/VDDA minimum value of 1.7 V is obtained when the device operates in reduced temperature range,
and with the use of an external power supply supervisor (refer to Section : Internal reset OFF).
±2 ±5
LSB
EO Offset error ±1.5 ±2.5
EG Gain error ±1.5 ±3
ED Differential linearity error ±1 ±2
EL Integral linearity error ±1.5 ±3
ai14395c
EO
EG
1L SBIDEAL
4095
4094
4093
5
4
3
2
1
0
7
6
1 2 3 456 7 4093 4094 4095 4096
(1)
(2)
ET
ED
EL
(3)
VSSA VDDA
VREF+
4096
(or depending on package)]
VDDA
4096
[1LSB IDEAL =
Electrical characteristics STM32F405xx, STM32F407xx
132/185 DocID022152 Rev 4
EG = Gain Error: deviation between the last ideal transition and the last actual one.
ED = Differential Linearity Error: maximum deviation between actual steps and the ideal one.
EL = Integral Linearity Error: maximum deviation between any actual transition and the end point
correlation line.
Figure 51. Typical connection diagram using the ADC
1. Refer to Table 67 for the values of RAIN, RADC and CADC.
2. Cparasitic represents the capacitance of the PCB (dependent on soldering and PCB layout quality) plus the
pad capacitance (roughly 5 pF). A high Cparasitic value downgrades conversion accuracy. To remedy this,
fADC should be reduced.
ai17534
VDD STM32F
AINx
IL±1 μA
0.6 V
VT
RAIN
(1)
Cparasitic
VAIN
0.6 V
VT
RADC
(1)
CADC(1)
12-bit
converter
Sample and hold ADC
converter
DocID022152 Rev 4 133/185
STM32F405xx, STM32F407xx Electrical characteristics
General PCB design guidelines
Power supply decoupling should be performed as shown in Figure 52 or Figure 53,
depending on whether VREF+ is connected to VDDA or not. The 10 nF capacitors should be
ceramic (good quality). They should be placed them as close as possible to the chip.
Figure 52. Power supply and reference decoupling (VREF+ not connected to VDDA)
1. VREF+ and VREF– inputs are both available on UFBGA176. VREF+ is also available on LQFP100, LQFP144,
and LQFP176. When VREF+ and VREF– are not available, they are internally connected to VDDA and VSSA.
Figure 53. Power supply and reference decoupling (VREF+ connected to VDDA)
1. VREF+ and VREF– inputs are both available on UFBGA176. VREF+ is also available on LQFP100, LQFP144,
and LQFP176. When VREF+ and VREF– are not available, they are internally connected to VDDA and VSSA.
VREF+
STM32F
VDDA
VSSA/V REF-
1 μF // 10 nF
1 μF // 10 nF
ai17535
(See note 1)
(See note 1)
VREF+/VDDA
STM32F
1 μF // 10 nF
VREF–/VSSA
ai17536
(See note 1)
(See note 1)
Electrical characteristics STM32F405xx, STM32F407xx
134/185 DocID022152 Rev 4
5.3.21 Temperature sensor characteristics
5.3.22 VBAT monitoring characteristics
Table 69. Temperature sensor characteristics
Symbol Parameter Min Typ Max Unit
TL
(1) VSENSE linearity with temperature - ±1 ±2 °C
Avg_Slope(1) Average slope - 2.5 mV/°C
V25
(1) Voltage at 25 °C - 0.76 V
tSTART
(2) Startup time - 6 10 μs
TS_temp
(3)(2) ADC sampling time when reading the temperature (1 °C accuracy) 10 - - μs
1. Based on characterization, not tested in production.
2. Guaranteed by design, not tested in production.
3. Shortest sampling time can be determined in the application by multiple iterations.
Table 70. Temperature sensor calibration values
Symbol Parameter Memory address
TS_CAL1 TS ADC raw data acquired at temperature of 30 °C, VDDA=3.3 V 0x1FFF 7A2C - 0x1FFF 7A2D
TS_CAL2 TS ADC raw data acquired at temperature of 110 °C, VDDA=3.3 V 0x1FFF 7A2E - 0x1FFF 7A2F
Table 71. VBAT monitoring characteristics
Symbol Parameter Min Typ Max Unit
R Resistor bridge for VBAT - 50 - KΩ
Q Ratio on VBAT measurement - 2 -
Er(1) Error on Q –1 - +1 %
TS_vbat
(2)(2) ADC sampling time when reading the VBAT
1 mV accuracy 5 - - μs
1. Guaranteed by design, not tested in production.
2. Shortest sampling time can be determined in the application by multiple iterations.
DocID022152 Rev 4 135/185
STM32F405xx, STM32F407xx Electrical characteristics
5.3.23 Embedded reference voltage
The parameters given in Table 72 are derived from tests performed under ambient
temperature and VDD supply voltage conditions summarized in Table 14.
5.3.24 DAC electrical characteristics
Table 72. Embedded internal reference voltage
Symbol Parameter Conditions Min Typ Max Unit
VREFINT Internal reference voltage –40 °C < TA < +105 °C 1.18 1.21 1.24 V
TS_vrefint
(1) ADC sampling time when reading the
internal reference voltage 10 - - μs
VRERINT_s
(2) Internal reference voltage spread over the
temperature range VDD = 3 V - 3 5 mV
TCoeff
(2) Temperature coefficient - 30 50 ppm/°C
tSTART
(2) Startup time - 6 10 μs
1. Shortest sampling time can be determined in the application by multiple iterations.
2. Guaranteed by design, not tested in production.
Table 73. Internal reference voltage calibration values
Symbol Parameter Memory address
VREFIN_CAL Raw data acquired at temperature of 30 °C, VDDA=3.3 V 0x1FFF 7A2A - 0x1FFF 7A2B
Table 74. DAC characteristics
Symbol Parameter Min Typ Max Unit Comments
VDDA Analog supply voltage 1.8(1) - 3.6 V
VREF+ Reference supply voltage 1.8(1) - 3.6 V VREF+ ≤ VDDA
VSSA Ground 0 - 0 V
RLOAD
(2) Resistive load with buffer
ON 5 - - kΩ
RO
(2) Impedance output with
buffer OFF - - 15 kΩ
When the buffer is OFF, the
Minimum resistive load between
DAC_OUT and VSS to have a 1%
accuracy is 1.5 MΩ
CLOAD
(2) Capacitive load - - 50 pF
Maximum capacitive load at
DAC_OUT pin (when the buffer is
ON).
DAC_OUT
min(2)
Lower DAC_OUT voltage
with buffer ON 0.2 - - V
It gives the maximum output
excursion of the DAC.
It corresponds to 12-bit input code
(0x0E0) to (0xF1C) at VREF+ =
3.6 V and (0x1C7) to (0xE38) at
VREF+ = 1.8 V
DAC_OUT
max(2)
Higher DAC_OUT voltage
with buffer ON - - VDDA – 0.2 V
Electrical characteristics STM32F405xx, STM32F407xx
136/185 DocID022152 Rev 4
DAC_OUT
min(2)
Lower DAC_OUT voltage
with buffer OFF - 0.5 - mV
It gives the maximum output
DAC_OUT excursion of the DAC.
max(2)
Higher DAC_OUT voltage
with buffer OFF - - VREF+ – 1LSB V
IVREF+
(4)
DAC DC VREF current
consumption in quiescent
mode (Standby mode)
- 170 240
μA
With no load, worst code (0x800)
at VREF+ = 3.6 V in terms of DC
consumption on the inputs
- 50 75
With no load, worst code (0xF1C)
at VREF+ = 3.6 V in terms of DC
consumption on the inputs
IDDA
(4)
DAC DC VDDA current
consumption in quiescent
mode(3)
- 280 380 μA With no load, middle code (0x800)
on the inputs
- 475 625 μA
With no load, worst code (0xF1C)
at VREF+ = 3.6 V in terms of DC
consumption on the inputs
DNL(4)
Differential non linearity
Difference between two
consecutive code-1LSB)
- - ±0.5 LSB Given for the DAC in 10-bit
configuration.
- - ±2 LSB Given for the DAC in 12-bit
configuration.
INL(4)
Integral non linearity
(difference between
measured value at Code i
and the value at Code i on a
line drawn between Code 0
and last Code 1023)
- - ±1 LSB Given for the DAC in 10-bit
configuration.
- - ±4 LSB Given for the DAC in 12-bit
configuration.
Offset(4)
Offset error
(difference between
measured value at Code
(0x800) and the ideal value
= VREF+/2)
- - ±10 mV Given for the DAC in 12-bit
configuration
- - ±3 LSB Given for the DAC in 10-bit at
VREF+ = 3.6 V
- - ±12 LSB Given for the DAC in 12-bit at
VREF+ = 3.6 V
Gain
error(4) Gain error - - ±0.5 % Given for the DAC in 12-bit
configuration
tSETTLING
(4)
Settling time (full scale: for a
10-bit input code transition
between the lowest and the
highest input codes when
DAC_OUT reaches final
value ±4LSB
- 3 6 μs CLOAD ≤ 50 pF,
RLOAD ≥ 5 kΩ
THD(4) Total Harmonic Distortion
Buffer ON
- - - dB CLOAD ≤ 50 pF,
RLOAD ≥ 5 kΩ
Table 74. DAC characteristics (continued)
Symbol Parameter Min Typ Max Unit Comments
DocID022152 Rev 4 137/185
STM32F405xx, STM32F407xx Electrical characteristics
Figure 54. 12-bit buffered /non-buffered DAC
1. The DAC integrates an output buffer that can be used to reduce the output impedance and to drive external
loads directly without the use of an external operational amplifier. The buffer can be bypassed by
configuring the BOFFx bit in the DAC_CR register.
5.3.25 FSMC characteristics
Unless otherwise specified, the parameters given in Table 75 to Table 86 for the FSMC
interface are derived from tests performed under the ambient temperature, fHCLK frequency
and VDD supply voltage conditions summarized in Table 14, with the following configuration:
• Output speed is set to OSPEEDRy[1:0] = 10
• Capacitive load C = 30 pF
• Measurement points are done at CMOS levels: 0.5VDD
Refer to Section Section 5.3.16: I/O port characteristics for more details on the input/output
characteristics.
Update
rate(2)
Max frequency for a correct
DAC_OUT change when
small variation in the input
code (from code i to i+1LSB)
- - 1 MS/s CLOAD ≤ 50 pF,
RLOAD ≥ 5 kΩ
tWAKEUP
(4)
Wakeup time from off state
(Setting the ENx bit in the
DAC Control register)
- 6.5 10 μs
CLOAD ≤ 50 pF, RLOAD ≥ 5 kΩ
input code between lowest and
highest possible ones.
PSRR+ (2)
Power supply rejection ratio
(to VDDA) (static DC
measurement)
- –67 –40 dB No RLOAD, CLOAD = 50 pF
1. VDD/VDDA minimum value of 1.7 V is obtained when the device operates in reduced temperature range, and with the use of
an external power supply supervisor (refer to Section : Internal reset OFF).
2. Guaranteed by design, not tested in production.
3. The quiescent mode corresponds to a state where the DAC maintains a stable output level to ensure that no dynamic
consumption occurs.
4. Guaranteed by characterization, not tested in production.
Table 74. DAC characteristics (continued)
Symbol Parameter Min Typ Max Unit Comments
RLOAD
CLOAD
Buffered/Non-buffered DAC
DACx_OUT
Buffer(1)
12-bit
digital to
analog
converter
ai17157
Electrical characteristics STM32F405xx, STM32F407xx
138/185 DocID022152 Rev 4
Asynchronous waveforms and timings
Figure 55 through Figure 58 represent asynchronous waveforms and Table 75 through
Table 78 provide the corresponding timings. The results shown in these tables are obtained
with the following FSMC configuration:
• AddressSetupTime = 1
• AddressHoldTime = 0x1
• DataSetupTime = 0x1
• BusTurnAroundDuration = 0x0
In all timing tables, the THCLK is the HCLK clock period.
Figure 55. Asynchronous non-multiplexed SRAM/PSRAM/NOR read waveforms
1. Mode 2/B, C and D only. In Mode 1, FSMC_NADV is not used.
Table 75. Asynchronous non-multiplexed SRAM/PSRAM/NOR read timings(1)(2)
Symbol Parameter Min Max Unit
tw(NE) FSMC_NE low time 2THCLK–0.5 2 THCLK+1 ns
tv(NOE_NE) FSMC_NEx low to FSMC_NOE low 0.5 3 ns
tw(NOE) FSMC_NOE low time 2THCLK–2 2THCLK+ 2 ns
th(NE_NOE) FSMC_NOE high to FSMC_NE high hold time 0 - ns
tv(A_NE) FSMC_NEx low to FSMC_A valid - 4.5 ns
th(A_NOE) Address hold time after FSMC_NOE high 4 - ns
Data
FSMC_NE
FSMC_NBL[1:0]
FSMC_D[15:0]
tv(BL_NE)
t h(Data_NE)
FSMC_NOE
FSMC_A[25:0] Address
tv(A_NE)
FSMC_NWE
tsu(Data_NE)
tw(NE)
ai14991c
tv(NOE_NE) t w(NOE) t h(NE_NOE)
th(Data_NOE)
t h(A_NOE)
t h(BL_NOE)
tsu(Data_NOE)
FSMC_NADV(1)
t v(NADV_NE)
tw(NADV)
DocID022152 Rev 4 139/185
STM32F405xx, STM32F407xx Electrical characteristics
Figure 56. Asynchronous non-multiplexed SRAM/PSRAM/NOR write waveforms
1. Mode 2/B, C and D only. In Mode 1, FSMC_NADV is not used.
tv(BL_NE) FSMC_NEx low to FSMC_BL valid - 1.5 ns
th(BL_NOE) FSMC_BL hold time after FSMC_NOE high 0 - ns
tsu(Data_NE) Data to FSMC_NEx high setup time THCLK+4 - ns
tsu(Data_NOE) Data to FSMC_NOEx high setup time THCLK+4 - ns
th(Data_NOE) Data hold time after FSMC_NOE high 0 - ns
th(Data_NE) Data hold time after FSMC_NEx high 0 - ns
tv(NADV_NE) FSMC_NEx low to FSMC_NADV low - 2 ns
tw(NADV) FSMC_NADV low time - THCLK ns
1. CL = 30 pF.
2. Based on characterization, not tested in production.
Table 76. Asynchronous non-multiplexed SRAM/PSRAM/NOR write timings(1)(2)
Symbol Parameter Min Max Unit
tw(NE) FSMC_NE low time 3THCLK 3THCLK+ 4 ns
tv(NWE_NE) FSMC_NEx low to FSMC_NWE low THCLK–0.5 THCLK+0.5 ns
tw(NWE) FSMC_NWE low time THCLK–1 THCLK+2 ns
th(NE_NWE) FSMC_NWE high to FSMC_NE high hold time THCLK–1 - ns
tv(A_NE) FSMC_NEx low to FSMC_A valid - 0 ns
Table 75. Asynchronous non-multiplexed SRAM/PSRAM/NOR read timings(1)(2)
NBL
Data
FSMC_NEx
FSMC_NBL[1:0]
FSMC_D[15:0]
tv(BL_NE)
th(Data_NWE)
FSMC_NOE
FSMC_A[25:0] Address
tv(A_NE)
tw(NWE)
FSMC_NWE
tv(NWE_NE) t h(NE_NWE)
th(A_NWE)
th(BL_NWE)
tv(Data_NE)
tw(NE)
ai14990
FSMC_NADV(1)
t v(NADV_NE)
tw(NADV)
Electrical characteristics STM32F405xx, STM32F407xx
140/185 DocID022152 Rev 4
Figure 57. Asynchronous multiplexed PSRAM/NOR read waveforms
th(A_NWE) Address hold time after FSMC_NWE high THCLK– 2 - ns
tv(BL_NE) FSMC_NEx low to FSMC_BL valid - 1.5 ns
th(BL_NWE) FSMC_BL hold time after FSMC_NWE high THCLK– 1 - ns
tv(Data_NE) Data to FSMC_NEx low to Data valid - THCLK+3 ns
th(Data_NWE) Data hold time after FSMC_NWE high THCLK–1 - ns
tv(NADV_NE) FSMC_NEx low to FSMC_NADV low - 2 ns
tw(NADV) FSMC_NADV low time - THCLK+0.5 ns
1. CL = 30 pF.
2. Based on characterization, not tested in production.
Table 77. Asynchronous multiplexed PSRAM/NOR read timings(1)(2)
Symbol Parameter Min Max Unit
tw(NE) FSMC_NE low time 3THCLK–1 3THCLK+1 ns
tv(NOE_NE) FSMC_NEx low to FSMC_NOE low 2THCLK–0.5 2THCLK+0.5 ns
tw(NOE) FSMC_NOE low time THCLK–1 THCLK+1 ns
th(NE_NOE) FSMC_NOE high to FSMC_NE high hold time 0 - ns
tv(A_NE) FSMC_NEx low to FSMC_A valid - 3 ns
Table 76. Asynchronous non-multiplexed SRAM/PSRAM/NOR write timings(1)(2)
NBL
Data
FSMC_NBL[1:0]
FSMC_AD[15:0]
tv(BL_NE)
th(Data_NE)
FSMC_A[25:16] Address
tv(A_NE)
FSMC_NWE
t v(A_NE)
ai14892b
Address
FSMC_NADV
t v(NADV_NE)
tw(NADV)
tsu(Data_NE)
th(AD_NADV)
FSMC_NE
FSMC_NOE
tw(NE)
t w(NOE)
tv(NOE_NE) t h(NE_NOE)
th(A_NOE)
th(BL_NOE)
tsu(Data_NOE) th(Data_NOE)
DocID022152 Rev 4 141/185
STM32F405xx, STM32F407xx Electrical characteristics
Figure 58. Asynchronous multiplexed PSRAM/NOR write waveforms
tv(NADV_NE) FSMC_NEx low to FSMC_NADV low 1 2 ns
tw(NADV) FSMC_NADV low time THCLK– 2 THCLK+1 ns
th(AD_NADV)
FSMC_AD(adress) valid hold time after
FSMC_NADV high) THCLK - ns
th(A_NOE) Address hold time after FSMC_NOE high THCLK–1 - ns
th(BL_NOE) FSMC_BL time after FSMC_NOE high 0 - ns
tv(BL_NE) FSMC_NEx low to FSMC_BL valid - 2 ns
tsu(Data_NE) Data to FSMC_NEx high setup time THCLK+4 - ns
tsu(Data_NOE) Data to FSMC_NOE high setup time THCLK+4 - ns
th(Data_NE) Data hold time after FSMC_NEx high 0 - ns
th(Data_NOE) Data hold time after FSMC_NOE high 0 - ns
1. CL = 30 pF.
2. Based on characterization, not tested in production.
Table 78. Asynchronous multiplexed PSRAM/NOR write timings(1)(2)
Symbol Parameter Min Max Unit
tw(NE) FSMC_NE low time 4THCLK–0.5 4THCLK+3 ns
tv(NWE_NE) FSMC_NEx low to FSMC_NWE low THCLK–0.5 THCLK -0.5 ns
tw(NWE) FSMC_NWE low tim e 2THCLK–0.5 2THCLK+3 ns
Table 77. Asynchronous multiplexed PSRAM/NOR read timings(1)(2) (continued)
NBL
Data
FSMC_NEx
FSMC_NBL[1:0]
FSMC_AD[15:0]
tv(BL_NE)
th(Data_NWE)
FSMC_NOE
FSMC_A[25:16] Address
tv(A_NE)
tw(NWE)
FSMC_NWE
tv(NWE_NE) t h(NE_NWE)
th(A_NWE)
th(BL_NWE)
t v(A_NE)
tw(NE)
ai14891B
Address
FSMC_NADV
t v(NADV_NE)
tw(NADV)
t v(Data_NADV)
th(AD_NADV)
Electrical characteristics STM32F405xx, STM32F407xx
142/185 DocID022152 Rev 4
Synchronous waveforms and timings
Figure 59 through Figure 62 represent synchronous waveforms and Table 80 through
Table 82 provide the corresponding timings. The results shown in these tables are obtained
with the following FSMC configuration:
• BurstAccessMode = FSMC_BurstAccessMode_Enable;
• MemoryType = FSMC_MemoryType_CRAM;
• WriteBurst = FSMC_WriteBurst_Enable;
• CLKDivision = 1; (0 is not supported, see the STM32F40xxx/41xxx reference manual)
• DataLatency = 1 for NOR Flash; DataLatency = 0 for PSRAM
In all timing tables, the THCLK is the HCLK clock period (with maximum
FSMC_CLK = 60 MHz).
th(NE_NWE) FSMC_NWE high to FSMC_NE high hold time THCLK - ns
tv(A_NE) FSMC_NEx low to FSMC_A valid - 0 ns
tv(NADV_NE) FSMC_NEx low to FSMC_NADV low 1 2 ns
tw(NADV) FSMC_NADV low time THCLK– 2 THCLK+ 1 ns
th(AD_NADV)
FSMC_AD(address) valid hold time after
FSMC_NADV high) THCLK–2 - ns
th(A_NWE) Address hold time after FSMC_NWE high THCLK - ns
th(BL_NWE) FSMC_BL hold time after FSMC_NWE high THCLK–2 - ns
tv(BL_NE) FSMC_NEx low to FSMC_BL valid - 1.5 ns
tv(Data_NADV) FSMC_NADV high to Data valid - THCLK–0.5 ns
th(Data_NWE) Data hold time after FSMC_NWE high THCLK - ns
1. CL = 30 pF.
2. Based on characterization, not tested in production.
Table 78. Asynchronous multiplexed PSRAM/NOR write timings(1)(2)
DocID022152 Rev 4 143/185
STM32F405xx, STM32F407xx Electrical characteristics
Figure 59. Synchronous multiplexed NOR/PSRAM read timings
Table 79. Synchronous multiplexed NOR/PSRAM read timings(1)(2)
Symbol Parameter Min Max Unit
tw(CLK) FSMC_CLK period 2THCLK - ns
td(CLKL-NExL) FSMC_CLK low to FSMC_NEx low (x=0..2) - 0 ns
td(CLKL-NExH) FSMC_CLK low to FSMC_NEx high (x= 0…2) 2 - ns
td(CLKL-NADVL) FSMC_CLK low to FSMC_NADV low - 2 ns
td(CLKL-NADVH) FSMC_CLK low to FSMC_NADV high 2 - ns
td(CLKL-AV) FSMC_CLK low to FSMC_Ax valid (x=16…25) - 0 ns
td(CLKL-AIV) FSMC_CLK low to FSMC_Ax invalid (x=16…25) 0 - ns
td(CLKL-NOEL) FSMC_CLK low to FSMC_NOE low - 0 ns
td(CLKL-NOEH) FSMC_CLK low to FSMC_NOE high 2 - ns
td(CLKL-ADV) FSMC_CLK low to FSMC_AD[15:0] valid - 4.5 ns
td(CLKL-ADIV) FSMC_CLK low to FSMC_AD[15:0] invalid 0 - ns
tsu(ADV-CLKH) FSMC_A/D[15:0] valid data before FSMC_CLK high 6 - ns
FSMC_CLK
FSMC_NEx
FSMC_NADV
FSMC_A[25:16]
FSMC_NOE
FSMC_AD[15:0] AD[15:0] D1 D2
FSMC_NWAIT
(WAITCFG = 1b, WAITPOL + 0b)
FSMC_NWAIT
(WAITCFG = 0b, WAITPOL + 0b)
tw(CLK) tw(CLK)
Data latency = 0
BUSTURN = 0
td(CLKL-NExL) td(CLKL-NExH)
td(CLKL-NADVL)
td(CLKL-AV)
td(CLKL-NADVH)
td(CLKL-AIV)
td(CLKL-NOEL) td(CLKL-NOEH)
td(CLKL-ADV)
td(CLKL-ADIV)
tsu(ADV-CLKH)
th(CLKH-ADV)
tsu(ADV-CLKH) th(CLKH-ADV)
tsu(NWAITV-CLKH) th(CLKH-NWAITV)
tsu(NWAITV-CLKH) th(CLKH-NWAITV)
tsu(NWAITV-CLKH) th(CLKH-NWAITV)
ai14893g
Electrical characteristics STM32F405xx, STM32F407xx
144/185 DocID022152 Rev 4
Figure 60. Synchronous multiplexed PSRAM write timings
th(CLKH-ADV) FSMC_A/D[15:0] valid data after FSMC_CLK high 0 - ns
tsu(NWAIT-CLKH) FSMC_NWAIT valid before FSMC_CLK high 4 - ns
th(CLKH-NWAIT) FSMC_NWAIT valid after FSMC_CLK high 0 - ns
1. CL = 30 pF.
2. Based on characterization, not tested in production.
Table 80. Synchronous multiplexed PSRAM write timings(1)(2)
Symbol Parameter Min Max Unit
tw(CLK) FSMC_CLK period 2THCLK - ns
td(CLKL-NExL) FSMC_CLK low to FSMC_NEx low (x=0..2) - 1 ns
td(CLKL-NExH) FSMC_CLK low to FSMC_NEx high (x= 0…2) 1 - ns
td(CLKL-NADVL) FSMC_CLK low to FSMC_NADV low - 0 ns
td(CLKL-NADVH) FSMC_CLK low to FSMC_NADV high 0 - ns
td(CLKL-AV) FSMC_CLK low to FSMC_Ax valid (x=16…25) - 0 ns
Table 79. Synchronous multiplexed NOR/PSRAM read timings(1)(2) (continued)
FSMC_CLK
FSMC_NEx
FSMC_NADV
FSMC_A[25:16]
FSMC_NWE
FSMC_AD[15:0] AD[15:0] D1 D2
FSMC_NWAIT
(WAITCFG = 0b, WAITPOL + 0b)
tw(CLK) tw(CLK)
Data latency = 0
BUSTURN = 0
td(CLKL-NExL) td(CLKL-NExH)
td(CLKL-NADVL)
td(CLKL-AV)
td(CLKL-NADVH)
td(CLKL-AIV)
td(CLKL-NWEL) td(CLKL-NWEH)
td(CLKL-NBLH)
td(CLKL-ADV)
td(CLKL-ADIV) td(CLKL-Data)
tsu(NWAITV-CLKH) th(CLKH-NWAITV)
ai14992g
td(CLKL-Data)
FSMC_NBL
DocID022152 Rev 4 145/185
STM32F405xx, STM32F407xx Electrical characteristics
Figure 61. Synchronous non-multiplexed NOR/PSRAM read timings
td(CLKL-AIV) FSMC_CLK low to FSMC_Ax invalid (x=16…25) 8 - ns
td(CLKL-NWEL) FSMC_CLK low to FSMC_NWE low - 0.5 ns
td(CLKL-NWEH) FSMC_CLK low to FSMC_NWE high 0 - ns
td(CLKL-ADIV) FSMC_CLK low to FSMC_AD[15:0] invalid 0 - ns
td(CLKL-DATA) FSMC_A/D[15:0] valid data after FSMC_CLK low - 3 ns
td(CLKL-NBLH) FSMC_CLK low to FSMC_NBL high 0 - ns
tsu(NWAIT-CLKH) FSMC_NWAIT valid before FSMC_CLK high 4 - ns
th(CLKH-NWAIT) FSMC_NWAIT valid after FSMC_CLK high 0 - ns
1. CL = 30 pF.
2. Based on characterization, not tested in production.
Table 81. Synchronous non-multiplexed NOR/PSRAM read timings(1)(2)
Symbol Parameter Min Max Unit
tw(CLK) FSMC_CLK period 2THCLK –0.5 - ns
td(CLKL-NExL) FSMC_CLK low to FSMC_NEx low (x=0..2) - 0.5 ns
Table 80. Synchronous multiplexed PSRAM write timings(1)(2)
FSMC_CLK
FSMC_NEx
FSMC_A[25:0]
FSMC_NOE
FSMC_D[15:0] D1 D2
FSMC_NWAIT
(WAITCFG = 1b, WAITPOL + 0b)
FSMC_NWAIT
(WAITCFG = 0b, WAITPOL + 0b)
tw(CLK) tw(CLK)
Data latency = 0
BUSTURN = 0
td(CLKL-NExL) td(CLKL-NExH)
td(CLKL-AV) td(CLKL-AIV)
td(CLKL-NOEL) td(CLKL-NOEH)
tsu(DV-CLKH) th(CLKH-DV)
tsu(DV-CLKH) th(CLKH-DV)
tsu(NWAITV-CLKH) th(CLKH-NWAITV)
tsu(NWAITV-CLKH) t h(CLKH-NWAITV)
tsu(NWAITV-CLKH) th(CLKH-NWAITV)
ai14894f
FSMC_NADV
td(CLKL-NADVL) td(CLKL-NADVH)
Electrical characteristics STM32F405xx, STM32F407xx
146/185 DocID022152 Rev 4
Figure 62. Synchronous non-multiplexed PSRAM write timings
td(CLKL-NExH) FSMC_CLK low to FSMC_NEx high (x= 0…2) 0 - ns
td(CLKL-NADVL) FSMC_CLK low to FSMC_NADV low - 2 ns
td(CLKL-NADVH) FSMC_CLK low to FSMC_NADV high 3 - ns
td(CLKL-AV) FSMC_CLK low to FSMC_Ax valid (x=16…25) - 0 ns
td(CLKL-AIV) FSMC_CLK low to FSMC_Ax invalid (x=16…25) 2 - ns
td(CLKL-NOEL) FSMC_CLK low to FSMC_NOE low - 0.5 ns
td(CLKL-NOEH) FSMC_CLK low to FSMC_NOE high 1.5 - ns
tsu(DV-CLKH) FSMC_D[15:0] valid data before FSMC_CLK high 6 - ns
th(CLKH-DV) FSMC_D[15:0] valid data after FSMC_CLK high 3 - ns
tsu(NWAIT-CLKH) FSMC_NWAIT valid before FSMC_CLK high 4 - ns
th(CLKH-NWAIT) FSMC_NWAIT valid after FSMC_CLK high 0 - ns
1. CL = 30 pF.
2. Based on characterization, not tested in production.
Table 81. Synchronous non-multiplexed NOR/PSRAM read timings(1)(2) (continued)
FSMC_CLK
FSMC_NEx
FSMC_A[25:0]
FSMC_NWE
FSMC_D[15:0] D1 D2
FSMC_NWAIT
(WAITCFG = 0b, WAITPOL + 0b)
tw(CLK) tw(CLK)
Data latency = 0
BUSTURN = 0
td(CLKL-NExL) td(CLKL-NExH)
td(CLKL-AV) td(CLKL-AIV)
td(CLKL-NWEL) td(CLKL-NWEH)
td(CLKL-Data)
tsu(NWAITV-CLKH)
th(CLKH-NWAITV)
ai14993g
FSMC_NADV
td(CLKL-NADVL) td(CLKL-NADVH)
td(CLKL-Data)
FSMC_NBL
td(CLKL-NBLH)
DocID022152 Rev 4 147/185
STM32F405xx, STM32F407xx Electrical characteristics
PC Card/CompactFlash controller waveforms and timings
Figure 63 through Figure 68 represent synchronous waveforms, and Table 83 and Table 84
provide the corresponding timings. The results shown in this table are obtained with the
following FSMC configuration:
• COM.FSMC_SetupTime = 0x04;
• COM.FSMC_WaitSetupTime = 0x07;
• COM.FSMC_HoldSetupTime = 0x04;
• COM.FSMC_HiZSetupTime = 0x00;
• ATT.FSMC_SetupTime = 0x04;
• ATT.FSMC_WaitSetupTime = 0x07;
• ATT.FSMC_HoldSetupTime = 0x04;
• ATT.FSMC_HiZSetupTime = 0x00;
• IO.FSMC_SetupTime = 0x04;
• IO.FSMC_WaitSetupTime = 0x07;
• IO.FSMC_HoldSetupTime = 0x04;
• IO.FSMC_HiZSetupTime = 0x00;
• TCLRSetupTime = 0;
• TARSetupTime = 0.
In all timing tables, the THCLK is the HCLK clock period.
Table 82. Synchronous non-multiplexed PSRAM write timings(1)(2)
1. CL = 30 pF.
2. Based on characterization, not tested in production.
Symbol Parameter Min Max Unit
tw(CLK) FSMC_CLK period 2THCLK - ns
td(CLKL-NExL) FSMC_CLK low to FSMC_NEx low (x=0..2) - 1 ns
td(CLKL-NExH) FSMC_CLK low to FSMC_NEx high (x= 0…2) 1 - ns
td(CLKL-NADVL) FSMC_CLK low to FSMC_NADV low - 7 ns
td(CLKL-NADVH) FSMC_CLK low to FSMC_NADV high 6 - ns
td(CLKL-AV) FSMC_CLK low to FSMC_Ax valid (x=16…25) - 0 ns
td(CLKL-AIV) FSMC_CLK low to FSMC_Ax invalid (x=16…25) 6 - ns
td(CLKL-NWEL) FSMC_CLK low to FSMC_NWE low - 1 ns
td(CLKL-NWEH) FSMC_CLK low to FSMC_NWE high 2 - ns
td(CLKL-Data) FSMC_D[15:0] valid data after FSMC_CLK low - 3 ns
td(CLKL-NBLH) FSMC_CLK low to FSMC_NBL high 3 - ns
tsu(NWAIT-CLKH) FSMC_NWAIT valid before FSMC_CLK high 4 - ns
th(CLKH-NWAIT) FSMC_NWAIT valid after FSMC_CLK high 0 - ns
Electrical characteristics STM32F405xx, STM32F407xx
148/185 DocID022152 Rev 4
Figure 63. PC Card/CompactFlash controller waveforms for common memory read
access
1. FSMC_NCE4_2 remains high (inactive during 8-bit access.
Figure 64. PC Card/CompactFlash controller waveforms for common memory write
access
FSMC_NWE
tw(NOE)
FSMC_NOE
FSMC_D[15:0]
FSMC_A[10:0]
FSMC_NCE4_2(1)
FSMC_NCE4_1
FSMC_NREG
FSMC_NIOWR
FSMC_NIORD
td(NCE4_1-NOE)
tsu(D-NOE) th(NOE-D)
tv(NCEx-A)
td(NREG-NCEx)
td(NIORD-NCEx)
th(NCEx-AI)
th(NCEx-NREG)
th(NCEx-NIORD)
th(NCEx-NIOWR)
ai14895b
td(NCE4_1-NWE) tw(NWE)
th(NWE-D)
tv(NCE4_1-A)
td(NREG-NCE4_1)
td(NIORD-NCE4_1)
th(NCE4_1-AI)
MEMxHIZ =1
tv(NWE-D)
th(NCE4_1-NREG)
th(NCE4_1-NIORD)
th(NCE4_1-NIOWR)
ai14896b
FSMC_NWE
FSMC_NOE
FSMC_D[15:0]
FSMC_A[10:0]
FSMC_NCE4_1
FSMC_NREG
FSMC_NIOWR
FSMC_NIORD
td(NWE-NCE4_1)
td(D-NWE)
FSMC_NCE4_2 High
DocID022152 Rev 4 149/185
STM32F405xx, STM32F407xx Electrical characteristics
Figure 65. PC Card/CompactFlash controller waveforms for attribute memory read
access
1. Only data bits 0...7 are read (bits 8...15 are disregarded).
td(NCE4_1-NOE) tw(NOE)
tsu(D-NOE) th(NOE-D)
tv(NCE4_1-A) th(NCE4_1-AI)
td(NREG-NCE4_1) th(NCE4_1-NREG)
ai14897b
FSMC_NWE
FSMC_NOE
FSMC_D[15:0](1)
FSMC_A[10:0]
FSMC_NCE4_2
FSMC_NCE4_1
FSMC_NREG
FSMC_NIOWR
FSMC_NIORD
td(NOE-NCE4_1)
High
Electrical characteristics STM32F405xx, STM32F407xx
150/185 DocID022152 Rev 4
Figure 66. PC Card/CompactFlash controller waveforms for attribute memory write
access
1. Only data bits 0...7 are driven (bits 8...15 remains Hi-Z).
Figure 67. PC Card/CompactFlash controller waveforms for I/O space read access
tw(NWE)
tv(NCE4_1-A)
td(NREG-NCE4_1)
th(NCE4_1-AI)
th(NCE4_1-NREG)
tv(NWE-D)
ai14898b
FSMC_NWE
FSMC_NOE
FSMC_D[7:0](1)
FSMC_A[10:0]
FSMC_NCE4_2
FSMC_NCE4_1
FSMC_NREG
FSMC_NIOWR
FSMC_NIORD
td(NWE-NCE4_1)
High
td(NCE4_1-NWE)
td(NIORD-NCE4_1) tw(NIORD)
tsu(D-NIORD) td(NIORD-D)
tv(NCEx-A) th(NCE4_1-AI)
ai14899B
FSMC_NWE
FSMC_NOE
FSMC_D[15:0]
FSMC_A[10:0]
FSMC_NCE4_2
FSMC_NCE4_1
FSMC_NREG
FSMC_NIOWR
FSMC_NIORD
DocID022152 Rev 4 151/185
STM32F405xx, STM32F407xx Electrical characteristics
Figure 68. PC Card/CompactFlash controller waveforms for I/O space write access
td(NCE4_1-NIOWR) tw(NIOWR)
tv(NCEx-A) th(NCE4_1-AI)
th(NIOWR-D)
ATTxHIZ =1
tv(NIOWR-D)
ai14900c
FSMC_NWE
FSMC_NOE
FSMC_D[15:0]
FSMC_A[10:0]
FSMC_NCE4_2
FSMC_NCE4_1
FSMC_NREG
FSMC_NIOWR
FSMC_NIORD
Table 83. Switching characteristics for PC Card/CF read and write cycles
in attribute/common space(1)(2)
Symbol Parameter Min Max Unit
tv(NCEx-A) FSMC_Ncex low to FSMC_Ay valid - 0 ns
th(NCEx_AI) FSMC_NCEx high to FSMC_Ax invalid 4 - ns
td(NREG-NCEx) FSMC_NCEx low to FSMC_NREG valid - 3.5 ns
th(NCEx-NREG) FSMC_NCEx high to FSMC_NREG invalid THCLK+4 - ns
